TWI443716B - Method of performing high-tilt implantation, apparatus for implanting ions and method of implanting workpiece - Google Patents
Method of performing high-tilt implantation, apparatus for implanting ions and method of implanting workpiece Download PDFInfo
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
Description
本發明是有關於離子植入機(ion implanter)，且特別是有關於具高傾斜植入(implant)角度效能的離子植入機。This invention relates to ion implanters, and more particularly to ion implanters having high tilt implant angle performance.
離子植入機通常用於半導體晶圓的生產中。利用離子源(ion source)產生帶正電荷的離子東，然後將離子束定向成朝向工件。當離子撞擊(strike)工件時，它們在衝擊區改變了工件的性質。這種改變使工件的特定區域被恰當地“摻雜”。摻雜區的結構限定了工件的功能，且通過導電內連線(conductive interconnects)的使用，這些工件可被轉化成複雜的電路。Ion implanters are commonly used in the production of semiconductor wafers. An ion source is used to generate a positively charged ion east, and then the ion beam is oriented toward the workpiece. When ions strike the workpiece, they change the properties of the workpiece in the impact zone. This change causes a particular area of the workpiece to be properly "doped". The structure of the doped regions defines the function of the workpiece, and these workpieces can be converted into complex circuits by the use of conductive interconnects.
在許多應用中，導引離子束以便能以垂直於工件平面的方向撞擊工件。圖1示出了工件100的代表性X、Y和Z三維定向。在許多應用中，將離子束(未示出)以實質上平行於Z軸的方向定向至工件100。在此方法中，離子束在X和Y軸上實質上與工件垂直。離子束可被認為是一組離子小射束(beamlet)，各個小射束在XZ平面包含單線線路(single line)。整個射束實質上垂直於工件是重要的，每一單個的小射束在X和Y軸上均垂直於工件也同樣重要。圖2a示出了由多個小射束210組成的離子束209。雖然，為了說明起見只示出了幾個，但離子束可包含任意數量的小射束。在此圖中，所有小射束210相互平行。相反，圖2b示出了同樣實質上垂直於工件的離子束250。然而，它的部分離子小射束(component ion beanlet)270並不相互平行，因此這些小射束中的一部分並不平行於工件。In many applications, the ion beam is directed so that it can strike the workpiece in a direction perpendicular to the plane of the workpiece. FIG. 1 illustrates a representative X, Y, and Z three-dimensional orientation of workpiece 100. In many applications, an ion beam (not shown) is directed to the workpiece 100 in a direction substantially parallel to the Z-axis. In this method, the ion beam is substantially perpendicular to the workpiece on the X and Y axes. The ion beam can be thought of as a set of ion beamlets, each of which contains a single line in the XZ plane. It is important that the entire beam is substantially perpendicular to the workpiece, and that each individual beam is perpendicular to the workpiece on both the X and Y axes. Figure 2a shows an ion beam 209 consisting of a plurality of beamlets 210. Although only a few are shown for purposes of illustration, the ion beam can contain any number of small beams. In this figure, all of the beamlets 210 are parallel to each other. In contrast, Figure 2b shows an ion beam 250 that is also substantially perpendicular to the workpiece. However, some of its component ion beanlets 270 are not parallel to each other, so some of these beamlets are not parallel to the workpiece.
因為離子束是三維實體，在多個維度存在平行。例如，離子小射束可平行穿過(across)X維度(例如，XZ平面)。在這個維度不考慮在Y維度的偏差。相似地，離子小射束可平行穿過Y維度(例如，YZ平面)，在Y維度不考慮在X維度的偏差。對於本領域熟知此項技藝者，離子束的離子小射束可在一個維度內(例如寬度)顯示平行而在正交(orthogonal)維度(例如高度)內不顯示平行是顯而易見的。然而這一點在本領域是眾所周知的且不被視為重要，因為工件支座(workpiece support)的機械運動確保了工件的所有部分都可暴露在射束下。Because the ion beam is a three-dimensional entity, there are parallels in multiple dimensions. For example, the ion beamlets can span the X dimension (eg, the XZ plane) in parallel. The deviation in the Y dimension is not considered in this dimension. Similarly, the ion beamlets can pass through the Y dimension (eg, the YZ plane) in parallel, with no deviation in the X dimension in the Y dimension. It will be apparent to those skilled in the art that the ion beamlets of the ion beam may exhibit parallelism in one dimension (e.g., width) and no parallelism in orthogonal dimensions (e.g., height). However, this is well known in the art and is not considered important because the mechanical movement of the workpiece support ensures that all parts of the workpiece can be exposed to the beam.
在此引用併入的美國專利第6437350號，公開了一種可在離子小射束之間維持所需平行度的裝置和方法。本領域具有一般技能者將領會通常可通過角度校正器(corrector)(例如磁鐵)來控制平行性。然而，小射束平行性的優化設置(optimal setting)可於除90°以外的入射角上出現。為了校正這一點將工件繞平行於Y軸的直線傾斜。如圖3所示，離子束離開角度校正器330。因為角度校正器330產生的磁場，離子束300的小射束310相互平行。然而，它們的入射角並不與工件320正交。為了糾正這一點，工件320以角度340繞直線轉動。這樣，離子束306可垂直地撞擊工件320。An apparatus and method for maintaining a desired degree of parallelism between ion beamlets is disclosed in U.S. Patent No. 6,437,350, incorporated herein by reference. Those of ordinary skill in the art will appreciate that parallelism can typically be controlled by an angle corrector (e.g., a magnet). However, the optimal setting of the beamlet parallelism can occur at incident angles other than 90°. To correct this, the workpiece is tilted about a line parallel to the Y axis. As shown in FIG. 3, the ion beam exits the angle corrector 330. Because of the magnetic field generated by the angle corrector 330, the beamlets 310 of the ion beam 300 are parallel to each other. However, their angle of incidence is not orthogonal to the workpiece 320. To correct this, the workpiece 320 is rotated in a straight line at an angle 340. As such, the ion beam 306 can strike the workpiece 320 vertically.
某些應用中需要離子束以除90°以外的入射角(例如以一大傾斜角度)撞擊工件。在一個實施例中，高傾斜植入，例如環形(halo)或口袋(pocket)植入被用於在閘極元件邊緣的下方產生摻雜口袋。圖4示出了包括位於基板420頂上的閘極區410的代表性電晶體(transistor)結構400。源極區430和汲極區440位於閘極區410的任一邊。為了延長閘極邊緣下的源極區和汲極區，離子束以顯著的傾斜角度衝擊基板，如方向箭頭450a和450b所示。典型地，此傾斜角度在約5度與約60度之間。In some applications, the ion beam is required to strike the workpiece at an angle of incidence other than 90° (eg, at a large angle of inclination). In one embodiment, a high tilt implant, such as a halo or pocket implant, is used to create a doped pocket below the edge of the gate element. FIG. 4 illustrates a representative transistor structure 400 including a gate region 410 on top of a substrate 420. Source region 430 and drain region 440 are located on either side of gate region 410. To extend the source and drain regions under the gate edge, the ion beam strikes the substrate at a significant tilt angle, as indicated by directional arrows 450a and 450b. Typically, this angle of inclination is between about 5 degrees and about 60 degrees.
通過在多個維度操作工件可實現此高傾斜植入。圖5示範了執行這些步驟的先前技術的較佳方法。圖5示出了實質上沿著XY平面排列的工件500。離子束510實質上平行於Z軸，並垂直於工件500。如上所述，工件500繞平行於Y軸的直線轉動以確保離子束以90°角撞擊工件。然後，為實現高傾斜植入，工件繞平行於X軸的直線轉動。然後，以常規方式通過離子束510掃描工件。通常，射束在X軸向上被靜電地或通過磁鐵來回地掃描，且工件在相對於射束的Y軸向上被轉移(translated)。磁式或靜電式掃描通常被稱為快速掃描，機械式掃描被稱為慢掃描。可輦代物包括用帶束(ribbon beam)代替快速掃描、用機械掃描(2D機械掃描)代替快速靜電或磁式掃描。當掃描工件後，工件在高傾斜角度被植入，例如圖4中所示的450a。This high tilt implant can be achieved by manipulating the workpiece in multiple dimensions. Figure 5 illustrates a preferred method of the prior art for performing these steps. Figure 5 shows workpiece 500 aligned substantially along the XY plane. The ion beam 510 is substantially parallel to the Z axis and is perpendicular to the workpiece 500. As described above, the workpiece 500 is rotated about a line parallel to the Y-axis to ensure that the ion beam strikes the workpiece at an angle of 90°. Then, to achieve high tilt implantation, the workpiece is rotated about a line parallel to the X axis. The workpiece is then scanned by ion beam 510 in a conventional manner. Typically, the beam is scanned back and forth electrostatically or by a magnet in the X-axis and the workpiece is translated in the Y-axis with respect to the beam. Magnetic or electrostatic scanning is often referred to as fast scanning, and mechanical scanning is referred to as slow scanning. The surrogate includes a ribbon beam instead of a fast scan, and a mechanical scan (2D mechanical scan) instead of a fast electrostatic or magnetic scan. After scanning the workpiece, the workpiece is implanted at a high tilt angle, such as 450a as shown in FIG.
為了在以圖4中所示450b為代表的入射角植入離子，有必要再次旋轉工件。在這種情況下，較佳地，工件繞垂直於工件表面的直線旋轉。產生以450b為代表的入射角需要180°的旋轉。In order to implant ions at an incident angle represented by 450b shown in Fig. 4, it is necessary to rotate the workpiece again. In this case, preferably, the workpiece is rotated about a line perpendicular to the surface of the workpiece. It takes 180° of rotation to generate an incident angle represented by 450b.
此繞三個單獨軸運動的組合能使工件以高傾斜角度植入。儘管具有如上所述之精密運動，但實現±0.5以內的角度精度並不容易。因此，60°的植入角度實際上可在59.5°與60.5°之間。因為幾何尺寸逐漸減小，對這種角度之每一者，特別是對入射角進行精確控制變得越來越重要。因此，傳統製程中的偏差總量會變得高至不可接受。This combination of motion around three separate axes enables the workpiece to be implanted at a high tilt angle. Despite the precise motion as described above, achieving angular accuracy within ±0.5 is not easy. Therefore, the 60° implantation angle can actually be between 59.5° and 60.5°. As the geometry is gradually reduced, it is increasingly important to precisely control each of these angles, especially the angle of incidence. Therefore, the total amount of deviation in the traditional process can become unacceptably high.
本發明克服了在先前技術存在的問題，本發明包括用於高傾斜角度植入的方法和裝置，結果產生先前不可實現的角度精度。The present invention overcomes the problems in the prior art, and the present invention includes methods and apparatus for high tilt angle implantation resulting in previously unachievable angular accuracy.
具有寬度和高度維度的離子束由許多單個的小射束組成。在這兩個維度中的一個維度中，這些小射束通常地受到更精確的控制，由此小射東之間表現出了更高的平行度。因此，為了降低角度誤差，例如半導體工件的工件繞直線傾斜，其中此直線實質上垂直於具更高平行度的維度。然後，工件被植入並繞正交於工件表面的直線旋轉。重複此方法直到在所有要求區域中已執行高傾斜植入。An ion beam having a width and height dimension consists of a number of individual beamlets. In one of these two dimensions, these beamlets are typically more precisely controlled, resulting in a higher degree of parallelism between the small emitters. Therefore, in order to reduce the angular error, for example, the workpiece of the semiconductor workpiece is inclined about a straight line, wherein the straight line is substantially perpendicular to the dimension with higher parallelism. The workpiece is then implanted and rotated about a line orthogonal to the surface of the workpiece. This method is repeated until a high tilt implant has been performed in all required areas.
在一個實施例中，小射束的方向沿離子束寬度顯示了更高的平行度。因此，工件繞正交於寬度的軸傾斜。在另一個實施例中，沿離子束高度方向出現了更高的平行度。在此實施例中，工件繞正交於高度的軸傾斜。In one embodiment, the direction of the beamlets shows a higher degree of parallelism along the ion beam width. Therefore, the workpiece is tilted about an axis orthogonal to the width. In another embodiment, a higher degree of parallelism occurs along the height of the ion beam. In this embodiment, the workpiece is tilted about an axis that is orthogonal to the height.
在進一步的實施例中，使用了掃描(scanned)離子束。此離子束的寬度根據所需傾斜角度變化，以便射束寬度可在傾斜角度增加時減小。In a further embodiment, a scanned ion beam is used. The width of this ion beam varies according to the desired tilt angle so that the beam width can be reduced as the tilt angle increases.
在進一步的實施例中，可被選擇性植入如環形植入和單邊埋帶(single sided buried straps)之工件的部分。晶圓繞垂直於具有更高平行度的維度的軸傾斜。然後，操作工件以便將其部分定向在暴露於離子束的位置。In a further embodiment, portions of the workpiece such as circular implants and single sided buried straps can be selectively implanted. The wafer is tilted about an axis perpendicular to a dimension having a higher degree of parallelism. The workpiece is then manipulated to orient its portion at a location that is exposed to the ion beam.
如上所述，離子束用於將離子植入至例如半導體晶圓之工件。圖6示出了典型離子植入機600的方塊圖。離子源610產生所需種類的離子，如砷或硼。這些離子形成射束，然後此射束通過源過濾器620。較佳地，源過濾器位於接近離子源的地方。射東內的離子在柱體630內被加速/減速到所需能階。具有隙孔645的質量分析器磁鐵640用於從離子束移除不必要的成分，結果產生通過鑑別隙孔645的具有所需能量及質量特性的離子束650。As mentioned above, the ion beam is used to implant ions into a workpiece such as a semiconductor wafer. FIG. 6 shows a block diagram of a typical ion implanter 600. Ion source 610 produces the desired species of ions, such as arsenic or boron. These ions form a beam which then passes through source filter 620. Preferably, the source filter is located proximate to the ion source. The ions in the emitter are accelerated/decelerated in the column 630 to the desired energy level. The mass analyzer magnet 640 having the apertures 645 is used to remove unwanted components from the ion beam, resulting in an ion beam 650 having the desired energy and mass characteristics by identifying the apertures 645.
在某些實施例中，離子束650是點射束(ion beam)。在此情況下，離子束通過掃描器660(較佳地是靜電掃描器)，掃描器660使離子束650偏移以產生掃描射東655，其中單個的小射束657具有偏離掃描源665的軌道(trajectories)。在某些實施例中，掃描器660包括與掃描產生器關聯的分離的掃描板。掃描產生器產生用於掃描板的掃描電壓波形，其例如為具有振幅和頻率分量的正弦、鋸齒或三角波形。在較佳實施例中，掃描波形典型地非常接近於三角波(直坡(constant slope))，以便掃描射東可以在每一位置上停留幾乎相同的時間量(amount of time)。三角的偏差被用於使射束均勻。如圖6所示，所產生的電場引起離子東偏離。In some embodiments, ion beam 650 is an ion beam. In this case, the ion beam passes through a scanner 660 (preferably an electrostatic scanner) that deflects the ion beam 650 to produce a scanning emitter 655, wherein the individual beamlets 657 have an off-scan source 665 Trajectories. In some embodiments, scanner 660 includes a separate scan board associated with the scan generator. The scan generator generates a scan voltage waveform for the scan plate, such as a sinusoidal, sawtooth or triangular waveform having amplitude and frequency components. In the preferred embodiment, the scanned waveform is typically very close to a triangular wave (constant slope) so that the scanning emitter can stay at almost the same amount of time at each location. Triangular deviations are used to make the beam uniform. As shown in Figure 6, the generated electric field causes the ions to deviate eastward.
調整角度校正器670以使偏離的離子小射束657偏移成一組具有基本平行的軌道的小射束。較佳地，角度校正器670包括電磁線圈和分離以形成間隙(gap)的磁極片(magnetic pole pieces)，其中離子小射束從此間隙通過。線圈被激發以便在間隙內產生磁場，此間隙使離子小射束根據所用磁場的強度和方向偏移。通過改變穿過電磁線圈的電流來調整磁場。或者，也可使用其他例如平行鏡頭(parallelizing lenses)的結構來執行此功能。The angle corrector 670 is adjusted to shift the offset ion beamlets 657 into a set of beamlets having substantially parallel tracks. Preferably, the angle corrector 670 includes an electromagnetic coil and magnetic pole pieces separated to form a gap from which the ion beamlets pass. The coil is energized to create a magnetic field within the gap that causes the ion beam to shift in accordance with the strength and direction of the magnetic field used. The magnetic field is adjusted by changing the current through the electromagnetic coil. Alternatively, other structures such as parallelizing lenses may be used to perform this function.
重要的是要注意射束掃描器660和角度校正器670包含板，離子小射束從這些板之間通過。因為這種佈置，射束可被嚴格控制在被限定於多組板之間的平面內。然而，有限的控制在正交於此平面的維度內是可能的。因此，關於角度校正器670，板被隔開以便產生間隙，此間隙較佳地在XZ平面內(由圖1內的坐標系統所限定)。因此，小射束控制在此維度內被最嚴格控制，使得角度校正器可將單個的離子小射束重新定向以使它們在X維度內相互平行。單個的小射束在Y軸方向不被控制，導致它們比在X維度內的單個小射束較不平行。平行通常是指各處都等距且永不相交。術語“平行度”用於表示一組離子小射束接***行的程度。術語“具有更高平行度的維度”用於指離子小射束更接***行的維度。換句話說，在此維度，離子小射束顯示更少發散(divergence)且被更嚴格控制。在圖6所示的系統中，歸因於射束掃描器660和角度校正器670的操作，具有更高平行度的維度是X維度。It is important to note that beam scanner 660 and angle corrector 670 comprise plates through which ion beamlets pass between the plates. Because of this arrangement, the beam can be tightly controlled in a plane defined between sets of plates. However, limited control is possible within the dimensions orthogonal to this plane. Thus, with respect to the angle corrector 670, the plates are spaced apart to create a gap, preferably in the XZ plane (defined by the coordinate system in Figure 1). Thus, beamlet control is most tightly controlled within this dimension such that the angle corrector can redirect individual ion beamlets such that they are parallel to each other in the X dimension. The individual beamlets are not controlled in the Y-axis direction, causing them to be less parallel than a single beamlet in the X dimension. Parallel usually means that the places are equidistant and never intersect. The term "parallelism" is used to mean the extent to which a group of ion beamlets are nearly parallel. The term "dimension with higher parallelism" is used to refer to a dimension in which the ion beamlets are closer to parallel. In other words, in this dimension, the ion beamlets show less divergence and are more tightly controlled. In the system shown in FIG. 6, due to the operation of beam scanner 660 and angle corrector 670, the dimension with higher parallelism is the X dimension.
角度校正器670之後，掃描射束射向工件。工件連接到工件支座。工件支座提供多種移動角度。例如，工件支座可繞穿過工件中心的且平行於三個主要軸中的任何一個軸的直線轉動。因此，通過繞平行於X軸的直線轉動，工件支座可實現工件傾斜以便工件的上半部分可相對於下半部分朝向離子源傾斜或遠離離子源傾斜。類似地，通過繞平行於Y軸的直線轉動，工件支座可實現工件傾斜以便工件的左半部分可相對於右半部分朝向離子源傾斜或遠離離子源傾斜。最終，工件支座可實現繞垂直於工件平面的直線旋轉，以產生工件表面的順時針或逆時針運動。這些運動不是互斥的，工件支座可同時以任何方向的結合***作。另外，工件支座也可提供通常在Y軸方向上之平移運動(translational movement)，以便將整個工件暴露在離子束下。如上所述，工件可繞平行於Y軸的直線而傾斜最大限度地使離子小射束的平行。這可通過上述工件支座的傾斜來實現。並且，如圖5所示，為實現用於環形植入的高傾斜入射角，工件通過工件支座的傾斜常規地關於平行於X軸的直線傾斜。After the angle corrector 670, the scanning beam is directed at the workpiece. The workpiece is attached to the workpiece support. The workpiece holder provides a variety of moving angles. For example, the workpiece support can be rotated about a line passing through the center of the workpiece and parallel to any one of the three main axes. Thus, by rotating about a line parallel to the X-axis, the workpiece support can tilt the workpiece so that the upper half of the workpiece can be tilted toward or away from the ion source relative to the lower half. Similarly, by rotating about a line parallel to the Y-axis, the workpiece support can tilt the workpiece so that the left half of the workpiece can be tilted toward or away from the ion source relative to the right half. Finally, the workpiece support can be rotated about a line perpendicular to the plane of the workpiece to produce a clockwise or counterclockwise motion of the surface of the workpiece. These movements are not mutually exclusive and the workpiece holder can be operated simultaneously in any combination of directions. In addition, the workpiece support can also provide a translational movement, typically in the Y-axis direction, to expose the entire workpiece to the ion beam. As described above, the workpiece can be tilted about a line parallel to the Y-axis to maximize the parallelism of the ion beamlets. This can be achieved by the tilting of the workpiece support described above. Also, as shown in Figure 5, to achieve a high oblique incidence angle for annular implantation, the tilt of the workpiece through the workpiece support is conventionally inclined with respect to a line parallel to the X-axis.
高傾斜角度植入通常通過四個步驟的製程實現。圖7示出了具有兩個電晶體710、720的代表性工件700，其中電晶體710通過它本身在垂直方向上的長度來定向，而電晶體720通過它本身在水平方向上的長度來定向。雖然只示出了兩個電晶體，但對本領域習知此項技藝者來說，工件可包含任意數目的電晶體是顯而易見的。High tilt angle implants are typically achieved in a four-step process. Figure 7 shows a representative workpiece 700 having two transistors 710, 720, wherein the transistor 710 is oriented by its length in the vertical direction, while the transistor 720 is oriented by its length in the horizontal direction. . Although only two transistors are shown, it will be apparent to those skilled in the art that the workpiece can include any number of transistors.
如圖5所示，在先前技術中，工件支座(且因此工件)繞基本平行於X軸的直線轉動而預計獲得高傾斜植入。參考圖7a-d，假設作為此旋轉的結果，工件的上部分向後傾斜(向頁面內)，而下半部分向前傾斜(從頁面出來)。在本製程的第一步驟期間，將如圖7a所示定向的電晶體提供給工件。因此，當工件暴露於離子東時，離子沿電晶體720的較低的閘極邊緣721被植入。因為高入射角，這些離子可穿透下面的閘極元件。因為閘極結構本身堵住了離子東，晶體720的較高的閘極邊緣722未被植入。因為環形植入主要涉及沿著閘極的長度的區域，而不是沿著它的寬度的區域，因此在這個時候導引至電晶體710的離子束是無意義的。As shown in Figure 5, in the prior art, the workpiece support (and therefore the workpiece) is rotated about a line substantially parallel to the X-axis to predict a high-tilt implant. Referring to Figures 7a-d, assume that as a result of this rotation, the upper portion of the workpiece is tilted back (inward of the page) and the lower half is tilted forward (from the page). During the first step of the process, a transistor oriented as shown in Figure 7a is provided to the workpiece. Thus, ions are implanted along the lower gate edge 721 of the transistor 720 as the workpiece is exposed to ions. Because of the high angle of incidence, these ions can penetrate the underlying gate elements. Because the gate structure itself blocks the ion east, the higher gate edge 722 of the crystal 720 is not implanted. Since the annular implant primarily involves a region along the length of the gate, rather than a region along its width, the ion beam directed to the transistor 710 at this time is meaningless.
在本製程的第二步驟中，例如，工件以順時針方向繞垂直於工件表面的直線(較佳地是穿過工件中心的直線)旋轉90°。因此，如圖7b所示兩個電晶體將出現在工件上。在此步驟期間，當工件暴露於離子束時，離子沿著電晶體710的較低的閘極邊緣711被植入。電晶體710的較高的閘極邊緣712不被植入。因為環形植入主要涉及沿著閘極的長度的區域，而不是沿著它的寬度的區域，因此在這個時候導引至電晶體710的離子束是無意義的。In a second step of the process, for example, the workpiece is rotated 90° in a clockwise direction about a line perpendicular to the surface of the workpiece, preferably a line through the center of the workpiece. Therefore, two transistors will appear on the workpiece as shown in Figure 7b. During this step, ions are implanted along the lower gate edge 711 of the transistor 710 as the workpiece is exposed to the ion beam. The higher gate edge 712 of the transistor 710 is not implanted. Since the annular implant primarily involves a region along the length of the gate, rather than a region along its width, the ion beam directed to the transistor 710 at this time is meaningless.
在本製程的第三步驟中，工件再次以順時針方向旋轉90°。因此，如圖7c所示兩個電晶體將出現在工件上。在此步驟期間，當工件暴露於離子束時，離子沿著電晶體720的較高的閘極邊緣722被植入。電晶體720的較低的閘極邊緣721不被植入。再次，在這個時候導引至電晶體710的離子束是無意義的。In the third step of the process, the workpiece is again rotated 90° in a clockwise direction. Therefore, two transistors will appear on the workpiece as shown in Figure 7c. During this step, ions are implanted along the higher gate edge 722 of the transistor 720 as the workpiece is exposed to the ion beam. The lower gate edge 721 of the transistor 720 is not implanted. Again, the ion beam directed to the transistor 710 at this time is meaningless.
最後，在本製程的第四步驟中，工件以順時針方向旋轉90°。因此，如圖7d所示兩個電晶體將出現在工件上。在此步驟期間，當工件暴露於離子束時，離子沿著電晶體710的較高的閘極邊緣712被植入。電晶體710的較低的閘極邊緣711不被植入。再次，在這個時候導引至電晶體710的離子束是無意義的。Finally, in the fourth step of the process, the workpiece is rotated 90° in a clockwise direction. Therefore, two transistors will appear on the workpiece as shown in Figure 7d. During this step, ions are implanted along the higher gate edge 712 of the transistor 710 as the workpiece is exposed to the ion beam. The lower gate edge 711 of the transistor 710 is not implanted. Again, the ion beam directed to the transistor 710 at this time is meaningless.
因此，通過實施此四步驟之製程，藉由使用4次繞垂直於工件表面的軸旋轉，在不考慮它們的定向軸的前提下所有電晶體的閘極邊緣都可被植入。請注意水平定向的電晶體720在步驟1和步驟3期間被植入，而垂直定向的電晶體710在步驟2和步驟4期間被植入。Therefore, by performing the four-step process, by using four rotations about an axis perpendicular to the surface of the workpiece, the gate edges of all the transistors can be implanted regardless of their orientation axes. Note that the horizontally oriented transistor 720 is implanted during steps 1 and 3, while the vertically oriented transistor 710 is implanted during steps 2 and 4.
如上所述，角度校正器670包含板，離子小射束從在這些板之間通過。如上所指出的，因為此配置，射束可被嚴格控制在被限定在多組板之間的平面內。然而在正交於此平面的維度內受限控制是可能的。因此，當離子小射束在X維度(例如XZ平面)內相互平行時，這些小射束在Y維度(例如YZ平面)可不相互平行。圖8a示出了包含許多小射束810的掃描離子束800。請注意角度校正器670使小射束的軌道幾乎平行。事實上，通過使用如美國專利第6437350號所描述的檢測技術，非常嚴格地控制離子小射束的角度偏差(例如控制在±.1°之內)是可能的。然而，這種控制水準在Y維度內是不可能的。圖8b示出了離子束820，舉例說明了小射束830雖然在XZ平面出現平行但在Y維度不平行。請注意單個的小射束的軌道具有Y分量，這導致了在Y維度(例如YZ平面)內與離子束平行方向的偏差。雖然此偏差可能不是非常大，但比XZ平面內的偏差要大得多。因此，離子束820顯示了在X維度內更高的平行度。而且，圖6所描述的系統沒有機制用來測量或控制Y維度內的偏差。As noted above, the angle corrector 670 includes a plate from which the ion beamlets pass between the plates. As noted above, because of this configuration, the beam can be tightly controlled within a plane defined between sets of plates. However, limited control is possible within the dimensions orthogonal to this plane. Thus, when the ion beamlets are parallel to each other in the X dimension (eg, the XZ plane), the beamlets may not be parallel to each other in the Y dimension (eg, the YZ plane). Figure 8a shows a scanned ion beam 800 comprising a plurality of small beams 810. Note that the angle corrector 670 makes the orbits of the beamlets nearly parallel. In fact, it is possible to very tightly control the angular deviation of the ion beamlets (e.g., within ±.1°) by using the detection technique as described in U.S. Patent No. 6,437,350. However, this level of control is not possible in the Y dimension. Figure 8b shows an ion beam 820, illustrating that the beamlets 830 are parallel in the XZ plane but not parallel in the Y dimension. Note that the orbit of a single beamlet has a Y component, which results in a deviation from the direction of the ion beam in the Y dimension (eg, the YZ plane). Although this deviation may not be very large, it is much larger than the deviation in the XZ plane. Thus, ion beam 820 shows a higher degree of parallelism in the X dimension. Moreover, the system depicted in Figure 6 has no mechanism for measuring or controlling deviations in the Y dimension.
參照圖7a-d，請注意結果所得的角度是基於離子束的入射角以及繞平行於X軸的直線之工件旋轉。因此，這個角度的精密度由離子束在Y維度內的平行和傾斜機制的準確度所確定。如上所述，離子束在Y維度內的平行不被控制且預計在此維度內的平行偏差可導致單個的離子小射束具有一度數之軌道偏離。Referring to Figures 7a-d, note that the resulting angle is based on the angle of incidence of the ion beam and the rotation of the workpiece about a line parallel to the X-axis. Therefore, the precision of this angle is determined by the accuracy of the parallel and tilting mechanisms of the ion beam in the Y dimension. As noted above, the parallelism of the ion beam in the Y dimension is not controlled and parallel deviations expected in this dimension can result in a single ion beamlet having a degree of orbital deviation.
正如前面所述，圖6所示的離子植入機能高程度地控制並測量在X維度(例如XZ平面)內的離子小射束平行性。結果，繞實質上平行於Y軸的直線的角運動可導致精確受控之測量和角度分佈。這一特徵被用於在先前技藝中以確保離子束相對於Y軸垂直地撞擊工件。這一特徵同樣用於本發明中以在高傾斜角度植入期間產生精確受控之入射角。本發明繞垂直於具有更高平行程度的離子束的維度的直線傾斜。As previously described, the ion implanter shown in Figure 6 is capable of controlling and measuring ion beamlet parallelism in the X dimension (e.g., XZ plane) to a high degree. As a result, angular motion about a line substantially parallel to the Y-axis can result in precisely controlled measurements and angular distribution. This feature is used in prior art techniques to ensure that the ion beam strikes the workpiece perpendicular to the Y-axis. This feature is also used in the present invention to produce a precisely controlled angle of incidence during implantation at high tilt angles. The invention is tilted about a line perpendicular to the dimension of the ion beam having a higher degree of parallelism.
返回參考圖7a-d，假設工件關於垂直軸傾斜，以使得工件的左側向頁面內傾斜且工件的右側向前傾斜(從頁面出來)，以便產生用於環形植入的所需入射角。在本製程的第一步驟期間，工件以如圖7a所示的定向呈現。因此，當工件暴露於離子束時，離子沿著並低於電晶體710的右閘極邊緣711被植入。因為閘極結構本身擋住了離子束，電晶體710的左閘極邊緣712不被植入。因為環形植入主要涉及沿著閘極的長度的區域，而不是沿著它的寬度的區域，因此在這個時候導引至電晶體720的離子束是無意義的。Referring back to Figures 7a-d, it is assumed that the workpiece is tilted about the vertical axis such that the left side of the workpiece is tilted into the page and the right side of the workpiece is tilted forward (from the page) to create the desired angle of incidence for the annular implant. During the first step of the process, the workpiece is presented in an orientation as shown in Figure 7a. Thus, when the workpiece is exposed to the ion beam, ions are implanted along and below the right gate edge 711 of the transistor 710. Because the gate structure itself blocks the ion beam, the left gate edge 712 of the transistor 710 is not implanted. Since the annular implant primarily involves a region along the length of the gate, rather than a region along its width, the ion beam directed to the transistor 720 at this time is meaningless.
在本製程的第二步驟中，例如，工件以順時針方向繞垂直於工件表面的直線旋轉90°。因此，如圖7b所示兩個電晶體將出現在工件上。在此步驟期間，當工件暴露於離子束時，離子沿著電晶體720的右閘極邊緣722被植入。電晶體720的左閘極邊緣721不被植入。在這個時候將離子東對準電晶體710是無意義的。In the second step of the process, for example, the workpiece is rotated 90° in a clockwise direction about a line perpendicular to the surface of the workpiece. Therefore, two transistors will appear on the workpiece as shown in Figure 7b. During this step, ions are implanted along the right gate edge 722 of the transistor 720 as the workpiece is exposed to the ion beam. The left gate edge 721 of the transistor 720 is not implanted. It is meaningless to align the ions east to the transistor 710 at this time.
在本方法的第三步驟中，工件再次以順時針方向旋轉90°。因此，如圖7c所示兩個電晶體將出現在工件上。在此步驟期間，當工件暴露於離子束時，離子沿著電晶體710的左閘極邊緣712被植入。電晶體710的右閘極邊緣711不被植入。再次地，在這個時候導引至電晶體720的離子束是無意義的。In the third step of the method, the workpiece is again rotated 90° in a clockwise direction. Therefore, two transistors will appear on the workpiece as shown in Figure 7c. During this step, ions are implanted along the left gate edge 712 of the transistor 710 as the workpiece is exposed to the ion beam. The right gate edge 711 of the transistor 710 is not implanted. Again, the ion beam directed to transistor 720 at this time is meaningless.
最後，在本方法的第四步驟中，工件以順時針方向旋轉90°。因此，如圖7d所示兩個電晶體將出現在工件上。在此步驟期間，當工件暴露於離子束時，離子沿著電晶體720的左閘極邊緣721被植入。電晶體720的右閘極邊緣722不被植入。再次地，在這個時候導引至電晶體710的離子束是無意義的。Finally, in the fourth step of the method, the workpiece is rotated 90° in a clockwise direction. Therefore, two transistors will appear on the workpiece as shown in Figure 7d. During this step, ions are implanted along the left gate edge 721 of the transistor 720 as the workpiece is exposed to the ion beam. The right gate edge 722 of the transistor 720 is not implanted. Again, the ion beam directed to the transistor 710 at this time is meaningless.
請注意水平定向的電晶體720在步驟2和步驟4期間被植入，而垂直定向的電晶體710在步驟1和步驟3期間被植入。Note that the horizontally oriented transistor 720 is implanted during steps 2 and 4, while the vertically oriented transistor 710 is implanted during steps 1 and 3.
這兩項技術間的差異是顯著的。在前項技術中，入射角是基於離子束在Y維度(YZ平面)內的平行和工件支座運動的精確度。在後項技術中，入射角是基於離子小射東在X維度(XZ平面)內的平行和工件支座運動的精確度。因為工件支座在兩個軸中同樣精確，誤差的區別完全歸因於入射離子束的特徵。如上所述，在XZ平面內此射束被非常嚴格地控制及測量。然而，在Y維度卻既不被控制也不被測量。因此，前項技術角度誤差的大小可為後項技術角度誤差的許多倍。而且，後項技術考慮到今後的改進，因為在X維度內的離子東平行早已是可測量和可控的。因此，對平行的進一步提高具有可減少高傾斜植入的角度誤差之相應效果。The difference between these two technologies is significant. In the prior art, the angle of incidence is based on the parallelism of the ion beam in the Y dimension (YZ plane) and the accuracy of the movement of the workpiece support. In the latter technique, the angle of incidence is based on the parallelism of the ion small emitters in the X dimension (XZ plane) and the accuracy of the motion of the workpiece support. Since the workpiece support is equally accurate in both axes, the difference in error is entirely due to the characteristics of the incident ion beam. As mentioned above, this beam is very tightly controlled and measured in the XZ plane. However, it is neither controlled nor measured in the Y dimension. Therefore, the size error of the prior art can be many times the error of the latter technical angle. Moreover, the latter technique takes into account future improvements because the ion east parallelism in the X dimension is already measurable and controllable. Therefore, further improvement in parallel has a corresponding effect of reducing the angular error of the high-tilt implant.
本發明不僅限於由每一者均為90°之4個旋轉所組成的植入。旋轉的個數和旋轉的總量都可被改變。例如，所有電晶體均具有單個定向是本領域公知的的佈局。利用具有此佈局的工件，如上所述的植入可通過使用每一者均為180°的2個旋轉來實現。在此情況下，工件將如圖7a所示被植入，圖7a中所有的電晶體如同電晶體710一樣被定向在同樣的方向。然後將工件旋轉180°，以便實現如圖7c所示的配置。因為所有電晶體被定向在同樣的方向，故在兩個旋轉中植入所有電晶體被。The invention is not limited to implants consisting of 4 rotations each of which is 90°. The number of rotations and the total amount of rotation can be changed. For example, having all of the transistors with a single orientation is a well-known layout in the art. With the workpiece having this layout, the implantation as described above can be achieved by using 2 rotations each of which is 180°. In this case, the workpiece will be implanted as shown in Figure 7a, and all of the transistors in Figure 7a are oriented in the same direction as the transistor 710. The workpiece is then rotated 180° to achieve the configuration shown in Figure 7c. Since all of the transistors are oriented in the same direction, all of the transistors are implanted in both rotations.
在另一個實施例中，工件的佈局可以是在超過2個的垂直方向上定向各種電晶體，因此工件必須在超過4個的方向上被植入。例如，如果工件具有需要藉由n次植入而定向的電晶體，那麼較佳地此工件將旋轉n次，其中每次旋轉為360/n度。因此，具有定向在8個等距離方向的電晶體的工件將需要每一者均為45°的8個旋轉。雖然電晶體的方向相互偏移固定的數額是較佳的，但這並不需要。換句話說，在需要6個旋轉的情況下，電晶體定向在0°、60°、120°、180°、240°、300°和360°是較佳的。因此，每一者均為60°之6個旋轉足以將電晶體植入。然而，電晶體可以不固定之間距定向，如0°、30°、120°、180°、210°和300°。在這種情況下，工件的旋轉數量不固定。In another embodiment, the layout of the workpiece may be to orient the various transistors in more than two vertical directions, so the workpiece must be implanted in more than four directions. For example, if the workpiece has a transistor that needs to be oriented by n implants, then preferably the workpiece will be rotated n times with 360/n degrees per rotation. Therefore, a workpiece having a transistor oriented in eight equidistant directions would require 8 rotations each of 45°. Although a fixed amount of the orientation of the transistors is preferably offset, this is not required. In other words, in the case where 6 rotations are required, it is preferred that the transistors are oriented at 0, 60, 120, 180, 240, 300 and 360. Therefore, each of the six rotations of 60° is sufficient to implant the transistor. However, the transistors may be oriented without a fixed distance, such as 0°, 30°, 120°, 180°, 210°, and 300°. In this case, the number of rotations of the workpiece is not fixed.
上述的描述假定了一平面工件並使用了垂直於此工件表面的旋轉軸。然而，本發明並不受此限制。在某些情況下，工件可以是非平面的，或者可存在更恰當的軸。本公開使用了術語“旋轉”以表明涉及工件植入區域相對於離子束的順時針或逆時針運動。雖然使用垂直於工件平表面的軸是較佳的旋轉方法，但其他軸也是可行的。只要待植入的表面經過相對於離子束的順時針或逆時針的運動，這種操作就被認為是“旋轉”。術語“傾斜”指的是繞實質上平行於工件表面的軸的運動，較佳地是繞由工件平表面所限定的平面內的軸運動。The above description assumes a planar workpiece and uses a rotational axis that is perpendicular to the surface of the workpiece. However, the invention is not limited by this. In some cases, the workpiece may be non-planar or a more appropriate axis may be present. The present disclosure uses the term "rotation" to indicate clockwise or counterclockwise motion with respect to the ion implantation of the workpiece implanted region. While the use of an axis perpendicular to the flat surface of the workpiece is the preferred method of rotation, other axes are possible. This operation is considered "rotation" as long as the surface to be implanted is moved clockwise or counterclockwise with respect to the ion beam. The term "tilt" refers to movement about an axis substantially parallel to the surface of the workpiece, preferably about a plane in a plane defined by the flat surface of the workpiece.
可使用如前所述的高精度高傾斜植入製程是本方法的另外特徵。源極汲極擴展(source drain extension)對本領域習知此項技藝者是公知製程，且可通過使用本發明實施。圖10示出了具有源極汲極擴展的電晶體的側視圖。基板1020在閘極1010的任一邊上被摻雜以形成源極1030和汲極1040。間隙壁(Spacers)1050設置在閘極1010的任一邊上以便將此源極區域和汲極區於閘極分開。為了提高電晶體的效能，希望將源極區和/或汲極區靠近閘極區1010擴展(或許在閘極區1010以下擴展)。源極擴展1060將經摻雜的源極區1030靠近閘極1010擴展，同時汲極擴展1070將經摻雜的汲極區1040靠近閘極1010擴展。每個擴展區域可通過使用此處所描述的高傾斜植入法植入。The use of a high precision, high tilt implant process as previously described is an additional feature of the method. The source drain extension is well known to those skilled in the art and can be implemented using the present invention. Figure 10 shows a side view of a transistor with source drain extension. Substrate 1020 is doped on either side of gate 1010 to form source 1030 and drain 1040. Spacers 1050 are disposed on either side of the gate 1010 to separate the source and drain regions from the gate. In order to improve the performance of the transistor, it is desirable to extend the source region and/or the drain region closer to the gate region 1010 (perhaps below the gate region 1010). The source extension 1060 expands the doped source region 1030 proximate the gate 1010 while the drain extension 1070 expands the doped drain region 1040 proximate the gate 1010. Each extended region can be implanted using the high tilt implant method described herein.
還有其他裝置結構例如雙重或三重閘極電晶體(未示出)，其中對射束的入射角的精確控制對於離子植入法的使用非常重要。這種裝置可以是非平面的。在這種裝置中，需要高傾斜植入以選擇性地將裝置的不同部分摻雜而且這種植入製程可因此從本發明獲益。There are other device configurations such as dual or triple gate transistors (not shown) in which precise control of the angle of incidence of the beam is very important for the use of ion implantation. Such a device can be non-planar. In such devices, high tilt implants are required to selectively dope different portions of the device and such implant processes may thus benefit from the present invention.
另外，還有某些製程步驟需要高精度高傾斜植入，但不需要多重旋轉。公知的一個這種製程是如美國專利第6426526和其他專利所描述的單邊埋帶。單邊埋帶通常用於動態隨機存取記憶體(dynamic ram,DRAM)單元生產中並需要在高傾斜角度實施植入。典型地，槽存在於工件中，且有必要植入槽的僅一個壁。工件的佈局，連同高傾斜角度植入使這一切成為可能。圖9示出了此操作的一個例子。在工件900上設槽910。通過使用高傾斜角度將離子束940暴露於工件900。槽910的佈局使近壁(near wall)930仍然被遮蔽且因此不被暴露於離子束940。然而，遠壁(far wall)920暴露於離子束且因此被植入。In addition, there are certain process steps that require high precision and high tilt implants, but do not require multiple rotations. One such known process is a single sided tape as described in U.S. Patent No. 6,426,526 and other patents. Single-sided buried straps are commonly used in the production of dynamic random access memory (DRAM) cells and require implantation at high tilt angles. Typically, the trough is present in the workpiece and it is necessary to implant only one wall of the trough. The layout of the workpiece, together with the high tilt angle implant, makes this possible. Figure 9 shows an example of this operation. A groove 910 is provided in the workpiece 900. The ion beam 940 is exposed to the workpiece 900 by using a high tilt angle. The layout of the slots 910 is such that the near wall 930 is still obscured and thus not exposed to the ion beam 940. However, the far wall 920 is exposed to the ion beam and is therefore implanted.
為了執行此製程步驟及諸如環形植入之其他製程步驟，有必要將工件定向以便待植入的工件特定部處於可暴露於離子束的位置。也就是說，假定繞Y軸傾斜，則必須將遠壁920定向以便其處於槽910的左側。類似地，上面對環形植入的描述是假定工件是被正確定向的以便待植入的晶圓部分處在可暴露於射束的位置。在較佳的實施例中，當工件繞垂直於具有更高平行度的離子束維度的軸傾斜時，將待植入的部分定位以便將它暴露。本項技術的使用提供了用於這種操作的被精確控制的植入角度。In order to perform this process step and other process steps such as annular implantation, it is necessary to orient the workpiece such that the particular portion of the workpiece to be implanted is in a position that can be exposed to the ion beam. That is, assuming that it is tilted about the Y axis, the far wall 920 must be oriented so that it is on the left side of the slot 910. Similarly, the above description of the annular implant assumes that the workpiece is properly oriented so that the portion of the wafer to be implanted is in a position that can be exposed to the beam. In a preferred embodiment, when the workpiece is tilted about an axis perpendicular to the ion beam dimension having a higher degree of parallelism, the portion to be implanted is positioned to expose it. The use of this technique provides a precisely controlled implant angle for such operations.
本發明的一個結果在於減少的射束使用。離子植入機600的掃描器650設立了大於待植入工件寬度的掃描離子束寬度。工件支座的平移運動與將工件在Y軸方向移動以便離子束掃描整個工件有關。繞X軸的高傾斜轉動減小了工件所需的機械運動範圍，但不影響工件的有效寬度。One result of the present invention is the reduced beam usage. The scanner 650 of the ion implanter 600 establishes a scanned ion beam width that is greater than the width of the workpiece to be implanted. The translational movement of the workpiece support is related to moving the workpiece in the Y-axis direction so that the ion beam scans the entire workpiece. The high tilting rotation around the X axis reduces the range of mechanical motion required for the workpiece, but does not affect the effective width of the workpiece.
本發明通過將工件繞Y軸轉動，可顯著影響提供給離子束而用於植入的工件的有效寬度。當垂直於離子束提供時，如果工件具有直徑D，它將具有D×Cos(θ)的有效直徑，其中θ是植入角度。如果所需的植入角度較大，如為60°時，工件的有效直徑顯著減少(例如，D×Cos(θ)，或D/2)。因此，由於更寬的射束並不在衝擊(impact)工件，能量和離子束的很大一部分被浪費了。為彌補這一點，施加至掃描器的波形可根據植入角度而被修改，因此產生足夠寬的掃描離子束以掃描工件的有效寬度，而不造成浪費。這種修改可通過根據植入角度(θ)而修改波形的振幅來實施。The present invention significantly affects the effective width of the workpiece for implantation by providing the ion beam by rotating the workpiece about the Y axis. When provided perpendicular to the ion beam, if the workpiece has a diameter D, it will have an effective diameter of D x Cos (θ), where θ is the implantation angle. If the required implantation angle is large, such as 60°, the effective diameter of the workpiece is significantly reduced (for example, D x Cos (θ), or D/2). Therefore, since a wider beam does not impact the workpiece, a large portion of the energy and ion beam is wasted. To compensate for this, the waveform applied to the scanner can be modified depending on the implantation angle, thus producing a sufficiently wide scanning ion beam to scan the effective width of the workpiece without wasting. This modification can be implemented by modifying the amplitude of the waveform according to the implantation angle (θ).
雖然上述說明描述了源自點離子束的掃描離子束，本發明不限制於此實施例。或者，可使用帶東。美國專利第5350926號公開了具有嚴格受控帶東的系統。帶束系統包括許多同樣的如圖6所圖示的構件。然而，因為離子束以帶狀產生，故不再需要以離子掃描器為主的一些構件。然而，帶束系統同樣與沿其寬度的帶束平行性有關。因此，帶束系統仍使用某些類型的平行裝置，如校正磁鐵或靜電平行透鏡。再次，如有關於掃描離子束之描述，帶束通常更嚴格地受控於一個維度內。帶束系統通常控制摻雜均勻度及在XZ平面內的平行度，而較少關注Y維度。因此，常規的帶束系統將根據受控的平行性來產生具有相似特徵的離子束作為掃描離子束。Although the above description describes a scanned ion beam originating from a spot ion beam, the invention is not limited to this embodiment. Alternatively, you can use the belt east. U.S. Patent No. 5,350,926 discloses a system having a strictly controlled band. The belt system includes many of the same components as illustrated in Figure 6. However, since the ion beam is generated in a strip shape, some members mainly composed of an ion scanner are no longer required. However, the belt system is also related to the parallelism of the belt along its width. Therefore, the belt system still uses some types of parallel devices, such as correction magnets or electrostatic parallel lenses. Again, as described with respect to scanning ion beams, the belt is typically more strictly controlled within one dimension. The belt system typically controls doping uniformity and parallelism in the XZ plane, with less focus on the Y dimension. Thus, conventional belt systems will generate ion beams with similar characteristics as scanned ion beams based on controlled parallelism.
本發明利用了離子束在一個維度內比在另一個維度內(例如，一個維度比另一個具有更高的平行程度)更嚴格的測量和控制的事實，並且將其用於確定合適的傾斜軸。在大多數習知的離子束植入系統中，射束在其寬度方向(被稱為X維度或XZ平面)被更嚴格地控制。因此，由於較佳的傾斜軸正交於最嚴格受控和具有更高平行度的平面，通過將工件繞Y軸傾斜而產生最準確的角度植入。然而，本發明並不限於此實施例。例如，附加的平行透鏡可加到上述系統以便掃離子束在Y維度內的平行提高某一水平，在此水平中，相較於在X維度內的離子小射束平行性，可更嚴格地控制離子束。在這種情況下，有利於工件繞X軸轉動。因此，工件繞軸傾斜，其中此軸垂直於擁有更高平行度之維度。The present invention takes advantage of the fact that the ion beam is more rigorously measured and controlled in one dimension than in another dimension (e.g., one dimension has a higher degree of parallelism than the other) and is used to determine the appropriate tilt axis. . In most conventional ion beam implantation systems, the beam is more tightly controlled in its width direction (referred to as the X dimension or the XZ plane). Thus, since the preferred tilt axis is orthogonal to the most tightly controlled and plane with higher parallelism, the most accurate angular implant is produced by tilting the workpiece about the Y axis. However, the invention is not limited to this embodiment. For example, additional parallel lenses can be added to the above system to increase the parallelism of the sweeping ion beam in the Y dimension by a level at which the ion beamlet parallelism in the X dimension can be more stringently Control the ion beam. In this case, it is advantageous to rotate the workpiece about the X axis. Therefore, the workpiece is tilted about the axis, where this axis is perpendicular to the dimension with higher parallelism.
通過利用離子束具有一個擁有更高平行度之維度的事實，大大提高各種植入製程的精確度是可能的。本工藝製程的許多階段，例如環形植入和單邊埋帶需要高精度地在高傾斜角度實施植入。通過將工件繞軸傾斜，其中此軸垂直於具有更高平行度之維度，該等製程的角度精確度可大大提高。By utilizing the fact that the ion beam has a dimension with a higher degree of parallelism, it is possible to greatly improve the accuracy of various implant processes. Many stages of the process, such as ring implants and unilateral burial, require high precision implantation at high tilt angles. By tilting the workpiece about the axis, where the axis is perpendicular to the dimension with higher parallelism, the angular accuracy of the processes can be greatly improved.
雖然本發明結合如上所公開的具體實施例來描述，但，於本領域熟知此項技藝者而言，許多變更和修改是顯而易見的。因此，本發明所提出的實施例僅意圖作為說明，而不是用來限制本發明。在不偏離本發明精神之前提下，可設想出各種實施例。While the present invention has been described in connection with the specific embodiments disclosed herein, many modifications and modifications are apparent to those skilled in the art. Therefore, the embodiments of the present invention are intended to be illustrative only and not to limit the invention. Various embodiments are conceivable without departing from the spirit of the invention.
100、320、700、900．．．工件100, 320, 700, 900. . . Workpiece
200、250、300、650、820、940．．．離子束200, 250, 300, 650, 820, 940. . . Ion beam
210、310、810、830．．．小射束210, 310, 810, 830. . . Small beam
270、657．．．離子小射束270, 657. . . Ion beam
330、670．．．角度校正器330, 670. . . Angle corrector
340．．．角度340. . . angle
400．．．電晶體結構400. . . Crystal structure
410．．．閘極區410. . . Gate area
420．．．基板420. . . Substrate
430．．．源極區430. . . Source area
440．．．汲極區440. . . Bungee area
450a、450b．．．箭頭450a, 450b. . . arrow
600．．．離子植入機600. . . Ion implanter
610．．．離子源610. . . source of ion
620．．．源過濾器620. . . Source filter
630．．．柱體630. . . Cylinder
640．．．質量分析器磁鐵640. . . Mass analyzer magnet
645．．．隙孔645. . . Slot
655．．．掃描射束655. . . Scanning beam
660．．．掃描器660. . . scanner
710、720．．．電晶體710, 720. . . Transistor
711、721．．．較低的閘極邊緣711, 721. . . Lower gate edge
712、722．．．較高的閘極邊緣712, 722. . . Higher gate edge
800．．．掃描離子束800. . . Scanning ion beam
910．．．槽910. . . groove
圖1示出了用於描述半導體工件定向的坐標系統。Figure 1 shows a coordinate system for describing the orientation of a semiconductor workpiece.
圖2a示出了包含許多離子小射束的離子束之代表。Figure 2a shows a representative of an ion beam comprising a plurality of ion beamlets.
圖2b示出了包含許多離子小射束的離子束之第二代表。Figure 2b shows a second representation of an ion beam comprising a plurality of ion beamlets.
圖3示出了在先前技術中所實施的工件運動以最大化離子小射束之平行性。Figure 3 illustrates the motion of the workpiece as performed in the prior art to maximize the parallelism of the ion beamlets.
圖4示出了代表性半導體裝置和一些高傾斜植入之角度。Figure 4 shows the angle of a representative semiconductor device and some highly tilted implants.
圖5示出了在先前技藝的高傾斜植入製程中繞X和Y軸傾斜的工件。Figure 5 illustrates a workpiece that is tilted about the X and Y axes in a prior art high tilt implant process.
圖6示出了適於實現本發明的離子植入機的代表性示意圖。Figure 6 shows a representative schematic of an ion implanter suitable for implementing the present invention.
圖7a示出了第一方法步驟期間所呈現的包含兩個代表性電晶體結構的工件。Figure 7a shows a workpiece comprising two representative transistor structures presented during the first method step.
圖7b示出了第二方法步驟期間所呈現的包含兩個代表性電晶體結構的工件。Figure 7b shows a workpiece comprising two representative transistor structures presented during the second method step.
圖7c示出了第三方法步驟期間所呈現的包含兩個代表性電晶體結構的工件。Figure 7c shows a workpiece comprising two representative transistor structures presented during a third method step.
圖7d示出了第四方法步驟期間所呈現的包含兩個代表性電晶體結構的工件。Figure 7d shows a workpiece comprising two representative transistor structures presented during the fourth method step.
圖8a示出了具有平行且共平面的離子小射束的理想離子束。Figure 8a shows an ideal ion beam with parallel and coplanar ion beamlets.
圖8b示出了具有平行但不共平面的離子小射束的離子束。Figure 8b shows an ion beam with parallel but non-coplanar ion beamlets.
圖9示出了根據本發明的槽形結構一個壁的植入。Figure 9 shows the implantation of one wall of a channel structure in accordance with the present invention.
圖10示出了具有源極汲極擴展的電晶體的側視圖。Figure 10 shows a side view of a transistor with source drain extension.
600．．．離子植入機600. . . Ion implanter
610．．．離子源610. . . source of ion
620．．．源過濾器620. . . Source filter
630．．．柱630. . . column
640．．．質量分析器磁鐵640. . . Mass analyzer magnet
645．．．隙孔645. . . Slot
650．．．離子束650. . . Ion beam
655．．．掃描射束655. . . Scanning beam
657．．．離子小射束657. . . Ion beam
660．．．掃描器660. . . scanner
670．．．角度校正器670. . . Angle corrector
Claims (26)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/005,991 US7820985B2 (en) | 2007-12-28 | 2007-12-28 | High tilt implant angle performance using in-axis tilt |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200939314A TW200939314A (en) | 2009-09-16 |
| TWI443716B true TWI443716B (en) | 2014-07-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| TW097150758A TWI443716B (en) | 2007-12-28 | 2008-12-25 | Method of performing high-tilt implantation, apparatus for implanting ions and method of implanting workpiece |
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| Country | Link |
|---|---|
| US (1) | US7820985B2 (en) |
| JP (1) | JP5469091B2 (en) |
| KR (1) | KR101502534B1 (en) |
| CN (1) | CN101925982B (en) |
| TW (1) | TWI443716B (en) |
| WO (1) | WO2009085939A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8350236B2 (en) * | 2010-01-12 | 2013-01-08 | Axcelis Technologies, Inc. | Aromatic molecular carbon implantation processes |
| US8664100B2 (en) | 2010-07-07 | 2014-03-04 | Varian Semiconductor Equipment Associates, Inc. | Manufacturing high efficiency solar cell with directional doping |
| KR20120050269A (en) | 2010-11-10 | 2012-05-18 | 현대자동차주식회사 | Head lamp for vehicle |
| US8378317B1 (en) * | 2011-09-07 | 2013-02-19 | Gtat Corporation | Ion implant apparatus and method of ion implantation |
| US8895944B2 (en) * | 2012-01-20 | 2014-11-25 | Advanced Ion Beam Technology, Inc. | Scan head and scan arm using the same |
| US8993980B1 (en) * | 2013-10-22 | 2015-03-31 | Varian Semiconductor Equipment Associates, Inc. | Dual stage scanner for ion beam control |
| CN105097509B (en) * | 2014-05-06 | 2017-10-03 | 稳懋半导体股份有限公司 | The preparation method of high electron mobility electric crystal boron implant isolation structure |
| JP6509089B2 (en) * | 2015-09-30 | 2019-05-08 | 住友重機械イオンテクノロジー株式会社 | Ion implantation system |
| DE102017117999A1 (en) * | 2017-08-08 | 2019-02-14 | Infineon Technologies Ag | ION IMPLANTING DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES |
| US11340530B2 (en) * | 2018-12-14 | 2022-05-24 | Xia Tai Xin Semiconductor (Qing Dao) Ltd. | Implanting method and apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62145729A (en) * | 1985-12-19 | 1987-06-29 | Toshiba Corp | Ion implantation and apparatus for the same |
| JP2551637Y2 (en) * | 1991-12-19 | 1997-10-27 | 日新電機株式会社 | Ion implanter |
| US5898179A (en) * | 1997-09-10 | 1999-04-27 | Orion Equipment, Inc. | Method and apparatus for controlling a workpiece in a vacuum chamber |
| US6329703B1 (en) * | 1998-02-25 | 2001-12-11 | Infineon Technologies Ag | Contact between a monocrystalline silicon region and a polycrystalline silicon structure and method for producing such a contact |
| US6200863B1 (en) | 1999-03-24 | 2001-03-13 | Advanced Micro Devices, Inc. | Process for fabricating a semiconductor device having assymetric source-drain extension regions |
| US6677599B2 (en) * | 2000-03-27 | 2004-01-13 | Applied Materials, Inc. | System and method for uniformly implanting a wafer with an ion beam |
| US6437350B1 (en) | 2000-08-28 | 2002-08-20 | Varian Semiconductor Equipment Associates, Inc. | Methods and apparatus for adjusting beam parallelism in ion implanters |
| US6777695B2 (en) * | 2002-07-12 | 2004-08-17 | Varian Semiconductors Equipment Associates, Inc. | Rotating beam ion implanter |
| US6933507B2 (en) * | 2002-07-17 | 2005-08-23 | Kenneth H. Purser | Controlling the characteristics of implanter ion-beams |
| US7166854B2 (en) * | 2003-12-09 | 2007-01-23 | Varian Semiconductor Equipment Associates, Inc. | Uniformity control multiple tilt axes, rotating wafer and variable scan velocity |
| US6992310B1 (en) * | 2004-08-13 | 2006-01-31 | Axcelis Technologies, Inc. | Scanning systems and methods for providing ions from an ion beam to a workpiece |
| US6949796B1 (en) | 2004-09-21 | 2005-09-27 | International Business Machines Corporation | Halo implant in semiconductor structures |
| US7462844B2 (en) * | 2005-09-30 | 2008-12-09 | Varian Semiconductor Equipment Associates, Inc. | Method, system, and apparatus for improving doping uniformity in high-tilt ion implantation |
| JP4812480B2 (en) * | 2006-03-22 | 2011-11-09 | 富士通セミコンダクター株式会社 | Manufacturing method of semiconductor device |
-
2007
- 2007-12-28 US US12/005,991 patent/US7820985B2/en active Active
-
2008
- 2008-12-18 KR KR1020107015755A patent/KR101502534B1/en active IP Right Grant
- 2008-12-18 WO PCT/US2008/087406 patent/WO2009085939A1/en active Application Filing
- 2008-12-18 CN CN2008801257237A patent/CN101925982B/en not_active Expired - Fee Related
- 2008-12-18 JP JP2010540796A patent/JP5469091B2/en not_active Expired - Fee Related
- 2008-12-25 TW TW097150758A patent/TWI443716B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| CN101925982A (en) | 2010-12-22 |
| CN101925982B (en) | 2012-01-11 |
| US7820985B2 (en) | 2010-10-26 |
| WO2009085939A1 (en) | 2009-07-09 |
| US20090166566A1 (en) | 2009-07-02 |
| JP2011509504A (en) | 2011-03-24 |
| KR20100111693A (en) | 2010-10-15 |
| JP5469091B2 (en) | 2014-04-09 |
| KR101502534B1 (en) | 2015-03-13 |
| TW200939314A (en) | 2009-09-16 |
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