TWI436490B - 光伏電池結構 - Google Patents
光伏電池結構 Download PDFInfo
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- TWI436490B TWI436490B TW099129844A TW99129844A TWI436490B TW I436490 B TWI436490 B TW I436490B TW 099129844 A TW099129844 A TW 099129844A TW 99129844 A TW99129844 A TW 99129844A TW I436490 B TWI436490 B TW I436490B
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- 239000004065 semiconductor Substances 0.000 claims description 18
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 16
- 239000010408 film Substances 0.000 claims description 13
- 230000005684 electric field Effects 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 5
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 3
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 3
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- 239000010409 thin film Substances 0.000 claims description 3
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- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
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- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
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- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- 238000001228 spectrum Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Description
本發明係關於一種光伏電池結構，尤指一種具有能隙變化結構之光伏電池結構。
近來研究再生能源技術蔚為風潮，而太陽能電池因可能成為未來能源供應之技術，為目前工業界所矚目之主要技術。是以利用太陽能電池來實現太陽能源的開發，是21世紀極有發展潛力的光電技術之一。如圖1所示係為一般習知P-N接面結構太陽能電池之結構，包含有指狀電極10、窗層11、N層12、P型矽晶片13及背電極14，該窗層11係覆蓋於N層12表面，促使更多入射光子進入太陽電池內部，但往往因內部N層12之N型材料厚度太厚，導致入射光無法有效到達PN接面121進而形成光損失。在照光下，空乏區中的光生載子將因為N層12厚度太厚、缺陷增加導致載子移動困難、容易形成複合，進而降低整體太陽能電池轉換效率。
為有效解決習知結構中N層過厚之問題，過去有人提出一種移除N層之太陽能電池結構(請參考圖2)。其太陽能電池結構，包含：指狀電極20、窗層21、P型矽晶片22及背電極23。其中該窗層21係以寬能隙材料製成，而覆於p型矽晶片22上，藉此使入射光可直接到達接面，因此不需N層即可形成載子，避免因N層過厚產生之光損失。然，此結構將因晶格匹配差異過大造成界面缺陷增加。而於元件照光期間，PN接面其內建電場所產生之載子大多數在輸出過程被復合，是以導致光電流幾乎消失。
為解決上述問題，本發明之一目的係提供一種光伏電池結構，其利用寬能隙材料使多數光子透射(寬能隙本身幾乎不吸收光子)，即將光子趕到窄能隙層以提升光子在寬能隙與窄能隙界面空乏區被吸收的機會，進而解決N層過厚造成光損失的問題。
本發明之另一目的在於提供一種光伏電池結構，以解決異質接面晶格不匹配所引起之接面缺陷與光生載子複合的問題。
因此，本發明提出一種光伏電池結構，其包括：第一能隙層，係為矽晶片，其具有一第一表面及一第二表面；第二能隙層，係為厚度介於1~100之半導體薄膜，其設置於第一能隙層之第一表面上，且能隙大於第一能隙層之能隙；第三能隙層，係包含有寬能隙導電材料，其設置於第二能隙層上，且其能隙大於第二能隙層之能隙；背部電極，係與第一能隙層之第二表面相接；以及指狀電極，係設置於第三能隙層上，並與第三能隙層相接。
於本發明之一實施例中，矽晶片係為P型矽晶片或類似物，但不侷限於此，亦即N型矽晶片亦可使用。
於本發明之一實施例中，半導體薄膜係可為非晶矽薄膜，但不侷限於此，其他能隙介於第一能隙層及第三能隙層間之類似薄膜亦可使用。
於本發明之一實施例中，半導體薄膜係為本質半導體、N型半導體或P型半導體之任一種。
於本發明之一實施例中，第二能隙層之厚度較佳為1~50，更佳為1~10。
於本發明之一實施例中，寬能隙導電材料係透明導電氧化物(Transparent Conducting Oxide，TCO)。舉例來說，該透明導電氧化物包括但不限於：AZO、ITO、CTO、ZnO:Al、ZnGa2
O4
、SnO2
:Sb、Ga2
O3
:Sn、AgInO2
:Sn、In2O3
:Zn、CuAlO2
,LaCuOS、NiO、CuGaO2
或SrCu2
O2
之任一種。較佳地，該透明導電氧化物係為AZO或ITO。更佳地，該透明導電氧化物係為為AZO。於本發明之一實施例中，背部電極與第一能隙層之第二表面之間形成有一背部電場(Back Surface Field，BSF)。
於本發明之一實施例中，光伏電池結構中之各能隙層之能隙大小不特別限定，係依所需光伏電池用途而改變，較佳為第一能隙層之能隙大小係介於1.1eV到1.7eV之間，而第三能隙層之能隙大小係介於2.5eV到4eV。
本發明之光伏電池結構係利用窄能隙材料之第一能隙層及寬能隙材料之第三能隙層形成能隙漸近變化結構，藉以降低太陽光頻譜光之反射，進而增加照射光被元件吸收的機會。
再者，於該能隙漸近變化結構中置入一極薄(厚度約等級)，且能隙大小介於結構中寬能隙與窄能隙之間的薄膜材料當作第二能隙層，以解決第一能隙層及第三能隙層間異質晶格匹配差異過大的問題，減少內部缺陷影響。
當元件接受照光之後，第一能隙層及第三能隙層之間界面容易產生光生載子，並且以穿遂方式通過該第二能隙層。該結構有效降低載子於元件內部發生再結合，因此使得太陽電池輸出光電流增加，進而提升太陽電池之光電轉換效率。
本發明中一或多個實施例之細節將於下詳細描述。而本發明之其他特徵及優點將由發明說明、實施方式及申請專利範圍中顯現。
上述之一般性描述及後述之詳細描述可藉由例子而理解，且可提供如本發明所主張之進一步解釋。
在本實施例中茲為使 貴審查委員對本發明之特徵及所達成之功效有更進一步之瞭解與認識，謹佐以較佳之實施例及配合詳細說明如後，所有附圖中，相同參考標號用於代表相同或相似之元件符號，且於下不再贅敘。
請參考圖3(a)~(d)所示，其係為本發明一實施例之光伏電池結構，係包括：
第一能隙層31，具有一第一表面31a與一第二表面31b，係採用P型矽晶片，該P型矽晶片之能隙係為1.12 eV。
第二能隙層32，係為厚度約10之半導體薄膜。其係可為本質半導體、N型半導體或P型半導體任一種之非晶矽薄膜，但非僅限於非晶矽薄膜，其他能隙相近，或能隙介於第一能隙層31及後述第三能隙層間33之類似薄膜亦可使用。該第二能隙層32以化學氣相沉積系統沉積於第一能隙層31的第一表面31a上，且能隙約為1.7 eV。
第三能隙層33，係包含有寬能隙導電材料。其係可為透明導電氧化物，包括但不限於：AZO、ITO、CTO、ZnO:Al、ZnGa2
O4
、SnO2
:Sb、Ga2
O3
:Sn、AgInO2
:Sn、In2O3
:Zn、CuAlO2
,LaCuOS、NiO、CuGaO2
或SrCu2
O2
之任一種。較佳係選用AZO，其能隙約3.4 eV，但不限於此，其他能隙相近或能隙大於第二能隙層32間之類似寬能隙導電材料亦可使用。該第三能隙層33係利用物理氣相沉積於第二能隙層32上。
背部電極35，係利用蒸鍍的方式形成於第一能隙層31之第二表面31b上。
指狀電極36，係採用傳統的微影蝕刻製程或網版印刷方式形成於第三能隙層33上，並與第三能隙層33相接。
其中背部電極35與指狀電極36的材質可選用導電性良好的金屬，如：金、銀、銅、錫、鉛、鉿、鎢、鉬、釹、鈦、鉭、鋁、鋅等金屬、或上述合金。且較佳地，背部電極35與第一能隙層31之第二表面31b之間形成有一背部電場34。更佳地，背部電場34是由背部電極35以爐管方式所形成。
請參考圖4，係本發明一實施例之能隙漸近變化能帶示意圖，在光照下，界面所產生出光生載子，載子能以穿遂方式通過第二能隙層32，而第二能隙層32厚度降低相對缺陷減少，可降低其內部複合損失，而包含有AZO之第三能隙層33置於第二能隙層32表面可使入射光子大幅進入太陽電池內部，因此使得太陽電池輸出光電流增加，進而提升太陽電池功率轉換效率，圖5為本發明一實施例之照光下電流-電壓圖。
此外太陽能電池的轉換效率(energy conversion efficiency)是指電池將入射太陽光的功率Pin
轉換成最大輸出之電功率Pmax之比例，意即
太陽能電池的輸出功率就是電流和電壓的乘積：
明顯地，太陽電池輸出的功率並非是個固定值，而是在某個電流-電壓工作點達到最大輸出功率，最大功率的條件可由dP/dV=0來決定。而太陽電池最大輸出功率為：
因此轉換效率為：
或
其中FF稱為填充因子(Fill factor)，其定義為太陽能電池在最大電功率輸出時，輸出功率Pmax
與開路電壓Voc
和短路電流ISC
乘積之比值，也就是電流-電壓特性曲線中最大功率矩形(灰色面積4)對Voc
×ISC
矩形的比例，本較佳實施例與對照組之轉換效率數據如表1所示：
如上表所示足見本較佳實施例增加太陽電池輸出光電流增加，進而提升太陽電池功率轉換效率。
綜合上述，本發明利用寬能隙材料及窄能隙材料製成之能隙變化結構，使多數光子透射將光子趕到窄能隙層以提升光子在寬能隙與窄能隙界面空乏區被吸收的機會，故不需要n層，同時，透過半導體薄膜製成之第二能隙層32解決異質接面晶格不匹配所引起接面缺陷與光生載子複合問題，確實具有新穎性及進步性。
所有說明書中之特徵均可以任何方式結合，每一此說明書中揭示之特徵均可以使用相同、相等或類似目的之替代特徵而置換。因此，除非另有說明，每一揭示之特徵僅為相同或相似特徵之廣泛系列中的例子。從上述描述，熟習該項技術領域者可輕易確知本發明之必要特徵，在不偏離本發明之精神與範圍之下，將可達成具有通常知識者將意識到可以多樣化之改變及修飾而適用於各種的用法或情況。對各種本實施例中揭示之矽晶片層、寬能隙材料、半導體薄膜、電極等材料等修改、替換，在不偏離本發明之創新精神與範圍之下，均可由所屬技術領域中具有通常知識者實行。故本發明應不侷限於如後申請專利範圍所請及其均等之發明。因此，其他實施例亦在後述請求項之範圍內。
所有說明書中提及之專利及刊物表示本發明所屬領域通常知識者程度。本文中提及之專利及刊物均以其各自全文引用，且視為每個專利或刊物均明確獨立地全文引用。
10．．．指狀電極
11．．．窗層
12．．．N層
13．．．P型矽晶片
14．．．電極
121．．．PN接面
20．．．指狀電極
21．．．窗層
22P．．．型矽晶片
23．．．電極
31．．．第一能隙層
32．．．第二能隙層
33．．．第三能隙層
34．．．背部電場
35．．．背部電極
36．．．指狀電極
31a．．．第一表面
31b．．．第二表面
4．．．灰色面積
圖1係一般習知P-N接面結構太陽能電池之結構。
圖2係習知移除N層之太陽能電池結構。
圖3(a)~(d)係本發明較佳實施例之結構製作流程。
圖4係本發明較佳實施例之能隙漸近變化能帶示意圖。
圖5係本發明較佳實施例之照光下電流-電壓圖。
31．．．第一能隙層
32．．．第二能隙層
33．．．第三能隙層
34．．．背部電場
35．．．背部電極
36．．．指狀電極
31a．．．第一表面
31b．．．第二表面
Claims (10)
- 一種光伏電池結構，包括：第一能隙層，係為矽晶片，其具有一第一表面及一第二表面；第二能隙層，係為厚度介於1~100之半導體薄膜，其設置於該第一能隙層之該第一表面上，且能隙大於該第一能隙層之能隙；第三能隙層，係包含有寬能隙導電材料，其設置於該第二能隙層上，且其能隙大於該第二能隙層之能隙；背部電極，係與該第一能隙層之該第二表面相接；以及指狀電極，係設置於該第三能隙層上，且與該第三能隙層相接。
- 如申請專利範圍第1項所述之光伏電池結構，其中該矽晶片為P型矽晶片。
- 如申請專利範圍第1項所述之光伏電池結構，其中該半導體薄膜為非晶矽薄膜。
- 如申請專利範圍第1項所述之光伏電池結構，其中該半導體薄膜為本質半導體、N型半導體或P型半導體之任一種。
- 如申請專利範圍第1項所述之光伏電池結構，其中該第二能隙層之厚度係介於1~50之間。
- 如申請專利範圍第5項所述之光伏電池結構，其中該第二能隙層之厚度係介於1~10之間。
- 如申請專利範圍第1項所述之光伏電池結構，其中該第三能隙層係一透明導電氧化物。
- 如申請專利範圍第7項所述之光伏電池結構，其中，該透明導電氧化物包括：AZO、ITO、CTO、ZnO:Al、ZnGa2 O4 、SnO2 :Sb、Ga2 O3 :Sn、AgInO2 :Sn、In2O3 :Zn、CuAlO2 ,LaCuOS、NiO、CuGaO2 或SrCu2 O2 之任一種。
- 如申請專利範圍第8項所述之光伏電池結構，其中該透明導電氧化物為AZO。
- 如申請專利範圍第1項所述之光伏電池結構，其中該背部電極與該第一能隙層之該第二表面間形成有一背部電場。
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| TW099129844A TWI436490B (zh) | 2010-09-03 | 2010-09-03 | 光伏電池結構 |
| US12/929,451 US20120055542A1 (en) | 2010-09-03 | 2011-01-26 | Photovoltaic cell |
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| US8597970B2 (en) * | 2011-12-21 | 2013-12-03 | Sunpower Corporation | Hybrid polysilicon heterojunction back contact cell |
| JP2014209538A (ja) * | 2013-03-27 | 2014-11-06 | 日本放送協会 | 光電変換素子、及び、光電変換素子の製造方法 |
| WO2015084896A1 (en) * | 2013-12-02 | 2015-06-11 | Solexel, Inc. | Passivated contacts for back contact back junction solar cells |
| US10222307B2 (en) | 2016-05-18 | 2019-03-05 | Credo Biomedical Pte Ltd. | Mixing and transfer device for materials used in biological and biochemical assays |
| CN111244203B (zh) * | 2020-03-25 | 2022-01-11 | 杭州电子科技大学 | 基于Ga2O3/CuI异质PN结的日光盲紫外探测器 |
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| US4663495A (en) * | 1985-06-04 | 1987-05-05 | Atlantic Richfield Company | Transparent photovoltaic module |
| US4652693A (en) * | 1985-08-30 | 1987-03-24 | The Standard Oil Company | Reformed front contact current collector grid and cell interconnect for a photovoltaic cell module |
| JP2740284B2 (ja) * | 1989-08-09 | 1998-04-15 | 三洋電機株式会社 | 光起電力素子 |
| JPH0471276A (ja) * | 1990-07-12 | 1992-03-05 | Canon Inc | 少劣化太陽電池モジュール |
| US5485019A (en) * | 1992-02-05 | 1996-01-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
| US6541695B1 (en) * | 1992-09-21 | 2003-04-01 | Thomas Mowles | High efficiency solar photovoltaic cells produced with inexpensive materials by processes suitable for large volume production |
| US5986204A (en) * | 1996-03-21 | 1999-11-16 | Canon Kabushiki Kaisha | Photovoltaic cell |
| JP3490964B2 (ja) * | 2000-09-05 | 2004-01-26 | 三洋電機株式会社 | 光起電力装置 |
| US7847186B2 (en) * | 2003-07-24 | 2010-12-07 | Kaneka Corporation | Silicon based thin film solar cell |
| US20060181197A1 (en) * | 2004-07-01 | 2006-08-17 | Kumio Nago | Electroluminescent device and display |
| TWI241036B (en) * | 2004-08-18 | 2005-10-01 | Formosa Epitaxy Inc | GaN LED structure with enhanced light emitting luminance |
| EP1643564B1 (en) * | 2004-09-29 | 2019-01-16 | Panasonic Intellectual Property Management Co., Ltd. | Photovoltaic device |
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| WO2006104107A1 (ja) * | 2005-03-29 | 2006-10-05 | Kyocera Corporation | 多結晶シリコン基板及びその製造方法、多結晶シリコンインゴット、光電変換素子、並びに光電変換モジュール |
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| US8975509B2 (en) * | 2010-06-07 | 2015-03-10 | The Governing Council Of The University Of Toronto | Photovoltaic devices with multiple junctions separated by a graded recombination layer |
| KR101154774B1 (ko) * | 2011-04-08 | 2012-06-18 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
| KR20130104347A (ko) * | 2012-03-13 | 2013-09-25 | 삼성전자주식회사 | 태양 전지 및 그 제조 방법 |
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| TW201212248A (en) | 2012-03-16 |
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