TWI433337B - Method of fabricating a photo sensor and photo sensor fabricated by the same - Google Patents
Method of fabricating a photo sensor and photo sensor fabricated by the same Download PDFInfo
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本發明係關於一種光感測元件之製備方法以及使用該方法所製得之光感測元件，尤指一種使用單璧奈米碳管之光感測元件之製備方法以及使用該方法所製得之光感測元件。The invention relates to a method for preparing a light sensing element and a light sensing element obtained by using the method, in particular to a method for preparing a light sensing element using a single carbon nanotube and the method using the same. Light sensing component.
光感測元件係一種可將光的信號轉換為電的信號之元件。光感測元件於日常生活之應用相當廣泛，例如，紅外線感測器、光纖通訊檢測器、數位相機或攝影機、智慧型手機、光學掃瞄器、夜晚自動照明等，而奈米級光感測元件甚至可能進一步應用於醫療用途。因此，光感測元件之技術開發是未來科技發展之一項重點。A light sensing element is an element that converts a signal of light into an electrical signal. Light sensing components are widely used in daily life, such as infrared sensors, fiber optic communication detectors, digital cameras or cameras, smart phones, optical scanners, nighttime automatic lighting, etc., while nanometer light sensing The component may even be further used for medical purposes. Therefore, the technical development of optical sensing components is a key focus of future technological development.
常見之光感測元件例如有感光二極體、電荷耦合元件(CCD，Charge Coupled Device)、互補性金屬氧化物半導體元件(CMOS，Complementary Metal-Oxide)等。其中，互補性金屬氧化物半導體元件係在矽晶圓上製作出PMOS(P-channel MOSFET)以及NMOS(N-channel MOSFET)元件而形成，其製作步驟包括有：矽半導體層之形成、P摻雜、N摻雜、通道形成等，因此製作時間長，所需花費設備及材料成本亦不低。Common photo sensing elements include, for example, a photodiode, a charge coupled device (CCD), a complementary metal oxide semiconductor device (CMOS, Complementary Metal-Oxide), and the like. The complementary metal oxide semiconductor device is formed by forming a PMOS (P-channel MOSFET) and an NMOS (N-channel MOSFET) device on a germanium wafer, and the manufacturing steps include: formation of a germanium semiconductor layer, and P-doping. Miscellaneous, N-doped, channel formation, etc., so the production time is long, and the cost of equipment and materials is not low.
感光耦合元件(CCD)是一種集成電路，上有許多排列整齊的電容，能感應光線，並將影像轉變成數字信號。其係利用信號電壓在半導體層之中建立電位阱(Potential Well)，在形成後的電位阱中儲存電荷，再以時序脈波將之傳送到另一電位阱，直到CCD輸出端。A photosensitive coupling element (CCD) is an integrated circuit with a number of neatly arranged capacitors that sense light and convert the image into a digital signal. It uses a signal voltage to establish a potential well in the semiconductor layer, stores the charge in the formed potential well, and transmits it to another potential well with a timing pulse wave until the CCD output.
作為一較佳之光感測元件，必須對於特定波長之光線具有高靈敏度、高反應速度、以及低雜訊之特性。此外，為能達到大量生產之要求，元件本身之結構應要求簡單化，且所使用之材料成本應盡量降低。例如，矽半導體之原料成本較高，若可使用其他材料為較佳。因此，本領域亟需發展出一種新式感光元件，使具有簡單結構、製作方法簡單、低製作成本等特點。As a preferred light sensing element, it is necessary to have high sensitivity, high reaction speed, and low noise characteristics for light of a specific wavelength. In addition, in order to meet the requirements of mass production, the structure of the component itself should be simplified, and the material cost used should be minimized. For example, the raw material cost of germanium semiconductor is relatively high, and other materials may be preferred. Therefore, there is a need in the art to develop a new type of photosensitive element, which has the characteristics of simple structure, simple manufacturing method, low production cost and the like.
本發明係關於一種光感測元件之製備方法，包括步驟：(A)將複數含金屬之奈米顆粒放入於一溶劑中以形成一催化劑；(B)提供一基板，將該基板浸泡於該催化劑中；(C)將該經浸泡後之基板拿出，並將該基板進行煅燒處理；(D)加熱該經煅燒處理後之基板，並同時提供一醇類之成長氣源，使藉由該醇類之成長氣源於該基板之表面形成複數單璧奈米碳管，其中，該些複數單璧奈米碳管係互相連接形成一網狀結構之薄膜；以及(E)形成至少二電極，並使該至少二電極各自獨立地與該網狀結構之薄膜連接。The invention relates to a method for preparing a light sensing element, comprising the steps of: (A) placing a plurality of metal-containing nanoparticles in a solvent to form a catalyst; (B) providing a substrate, immersing the substrate in (C) taking the immersed substrate out, and calcining the substrate; (D) heating the calcined substrate, and simultaneously providing a growing gas source of alcohol Forming a plurality of monoterpene carbon nanotubes from the surface of the substrate by the growth gas of the alcohol, wherein the plurality of monoterpene carbon nanotubes are interconnected to form a film of a network structure; and (E) forming at least And a second electrode, and the at least two electrodes are independently connected to the film of the mesh structure.
本發明之光感測元件之製備方法，利用酒精催化化學氣相沈積系統(Alcohol Catalytic Chemical Vapor Deposition)成長高純度之單壁奈米碳管(Single-walled Carbon Nanotubes)，在眾多單壁奈米碳管交錯情形之下，形成一具有特殊外貌與特性之薄膜光感測材料。由於單壁奈米碳管結構完整，形成薄膜後容易以傳統方法進一步加工，因此可順利取代傳統之光感測材料。The method for preparing a photo-sensing element of the present invention uses a alcohol-catalyzed chemical vapor deposition system (Alcohol Catalytic Chemical Vapor Deposition) to grow high-purity single-walled carbon nanotubes in a plurality of single-walled nano-tubes. Under the condition of carbon tube interlacing, a thin film light sensing material with special appearance and characteristics is formed. Since the single-walled carbon nanotube has a complete structure, it is easy to be further processed by a conventional method after forming a film, so that the conventional light sensing material can be successfully replaced.
習知技術中，以奈米碳管作為電子元件之技術多以市售之商業化碳管為材料，輔以濕式旋塗技術將奈米碳管材料散佈於基板上後加工處理。然而由於奈米材料間具有強大的凡得瓦力，因此容易使得材料產生團聚現象而不易分散，以致材料密度無法精準控制，造成元件特性變異過大、主動區傳輸效率難以提升等嚴重問題。此外，習知技術中，通常係以易爆之甲烷或乙炔並搭配氫氣作為氣源的成長方法，因此安全性較不佳。本發明之光感測元件之製備方法，係利用醇類氣體來進行，因此安全性可大幅提升。In the prior art, the technology of using carbon nanotubes as electronic components is mostly based on a commercially available commercial carbon tube, and the nano-carbon tube material is dispersed on a substrate by a wet spin coating technique. However, due to the strong van der Waals force between the nano materials, it is easy to cause the material to agglomerate and not easily disperse, so that the material density can not be precisely controlled, resulting in serious problems such as excessive variation of component characteristics and difficulty in improving the transmission efficiency of the active region. In addition, in the prior art, it is generally a growth method in which explosive methane or acetylene is used together with hydrogen as a gas source, and thus safety is poor. The method for producing the photo-sensing element of the present invention is carried out using an alcohol gas, so that the safety can be greatly improved.
本發明所製得之光感測元件具有如下特性：(1)奈米碳管薄膜對光敏感，吸收光後轉為電流輸出，可作為光電感應元件；(2)不同之元件主動層面積將會有不同的元件光電流增益，而欲得到最佳光電流增益首要條件為減少通道電阻，即增加通道尺寸中寬度與長度之比值，例如，通道之厚度為350nm時，最佳光電流增益之元件其通道寬度約100μm，長度約10μm(即W/L=10)；(3)透過光源開啟-關閉之測試，於幾個週期內，可發現本發明所製得之光感測元件之光電流產生情形相當穩定，並無巨大之電流變化；以及(4)透過照射UV光源之研究，證實本發明之光感測元件在UV光源照射下亦會產生光電流，因此，本發明之光感測元件除可作為一般可見光光感測元件之外，亦相當適合作為短波長之紫外光感測元件。The light sensing element prepared by the invention has the following characteristics: (1) the carbon nanotube film is sensitive to light, and after absorbing light, it is converted into a current output, which can be used as a photoelectric sensing element; (2) the active layer area of different components will be There will be different component photocurrent gains, and the first condition for optimal photocurrent gain is to reduce the channel resistance, that is, increase the ratio of the width to the length of the channel size. For example, when the thickness of the channel is 350 nm, the optimal photocurrent gain is The element has a channel width of about 100 μm and a length of about 10 μm (ie, W/L=10); (3) through the light source on-off test, the light of the light sensing element produced by the present invention can be found in several cycles. The current generation situation is quite stable, there is no huge current change; and (4) research by irradiating the UV light source proves that the light sensing element of the present invention also generates photocurrent under the illumination of the UV light source, and therefore, the light perception of the present invention In addition to being used as a general visible light sensing element, the measuring element is also suitable as a short-wavelength ultraviolet light sensing element.
本發明之光感測元件之製備方法中，該步驟(E)之後較佳可更包括一步驟(F)：提供一外加電壓單元，使該外加電壓單元與該至少二電極連接。In the method for preparing the photo-sensing device of the present invention, the step (E) preferably further comprises a step (F) of providing an applied voltage unit to connect the applied voltage unit to the at least two electrodes.
本發明之光感測元件之製備方法中，該步驟(D)中，加熱該基板之溫度較佳可為600℃至900℃。In the method for preparing the photo-sensing element of the present invention, in the step (D), the temperature of the substrate is preferably from 600 ° C to 900 ° C.
本發明之光感測元件之製備方法中，該步驟(D)中，該醇類之成長氣源係為一般之醇類，醇類之純度較佳為99.9%以上，且醇類較佳較佳可選自由：甲醇、乙醇、丙醇、異丙醇、正丁醇、異丁醇、正戊醇、及其混合所組成之群組；最佳係使用乙醇，但不限於此。In the method for preparing the photo-sensing device of the present invention, in the step (D), the growing gas source of the alcohol is a general alcohol, and the purity of the alcohol is preferably 99.9% or more, and the alcohol is preferably. Preferably, the group consists of methanol, ethanol, propanol, isopropanol, n-butanol, isobutanol, n-pentanol, and mixtures thereof; the best system uses ethanol, but is not limited thereto.
本發明之光感測元件之製備方法中，該步驟(C)中，煅燒處理之溫度較佳可為320℃至480℃。In the preparation method of the photo sensing element of the present invention, in the step (C), the temperature of the calcination treatment may preferably be 320 ° C to 480 ° C.
本發明之光感測元件之製備方法中，該步驟(D)與步驟(C)之間，較佳可更包括一步驟(D0)：提供一氨氣以進行還原反應。In the preparation method of the photo-sensing element of the present invention, between step (D) and step (C), it is preferred to further comprise a step (D0) of providing an ammonia gas for the reduction reaction.
本發明之光感測元件之製備方法中，該步驟(D)中，由複數單璧奈米碳管互相連接形成之該網狀結構薄膜之厚度較佳可為100nm至400nm。In the method for preparing a photo-sensing element of the present invention, in the step (D), the thickness of the network structure film formed by interconnecting a plurality of individual tantalum carbon nanotubes may preferably be 100 nm to 400 nm.
本發明之光感測元件之製備方法中，該步驟(A)中，該複數含金屬之奈米顆粒之金屬較佳可選自由：鈷、鉬、及其混合所組成之群組，其中該含金屬之奈米顆粒較佳係為醋酸鈷、醋酸鉬、醋酸鐵、醋酸鎳、及其混合所組成之群組；最佳係醋酸鈷、或醋酸鉬。本發明之發明人在經過使用不同粉末溶於乙醇之溶液，並以相同參數成長奈米碳管，經實驗分析後，發現以醋酸鈷及醋酸鉬溶解於乙醇之溶液，可成長密度較高、G/D ratio較佳之單壁奈米碳管薄膜。In the preparation method of the photo-sensing element of the present invention, in the step (A), the metal of the plurality of metal-containing nanoparticles is preferably selected from the group consisting of cobalt, molybdenum, and a mixture thereof, wherein the The metal-containing nanoparticle is preferably a group consisting of cobalt acetate, molybdenum acetate, iron acetate, nickel acetate, and a mixture thereof; preferably cobalt acetate or molybdenum acetate. The inventors of the present invention have developed a nanocarbon tube by using a solution in which different powders are dissolved in ethanol and growing the carbon nanotubes with the same parameters. After experimental analysis, it is found that a solution in which cobalt acetate and molybdenum acetate are dissolved in ethanol can have a higher growth density. A single-walled carbon nanotube film with better G/D ratio.
本發明之光感測元件之製備方法中，該步驟(A)中，該溶劑較佳可選自由：乙醇、甲醇、丙醇、異丙醇、正丁醇、異丁醇、正戊醇、及其混合溶液所組成之群組。且溶劑與含金屬之奈米顆粒之比例較佳為[含金屬之奈米顆粒：溶劑]=0.01~0.05wt%。In the preparation method of the photo-sensing element of the present invention, in the step (A), the solvent is preferably selected from the group consisting of ethanol, methanol, propanol, isopropanol, n-butanol, isobutanol, n-pentanol, And a group consisting of its mixed solution. Further, the ratio of the solvent to the metal-containing nanoparticle is preferably [metal-containing nanoparticle: solvent] = 0.01 to 0.05% by weight.
本發明之光感測元件之製備方法，其中，該步驟(D)中，所形成之該複數單璧奈米碳管之直徑較佳為0.5至2.0nm，更佳為0.8至1.2nm。In the method for producing a photo-sensing element of the present invention, the diameter of the plurality of monoterpene carbon nanotubes formed in the step (D) is preferably from 0.5 to 2.0 nm, more preferably from 0.8 to 1.2 nm.
本發明之光感測元件之製備方法中，該步驟(D)中，所形成之該複數單璧奈米碳管經由拉曼散射光譜(Raman Scattering Spectrum)分析後，所得到之G/D比值較佳可為10至25，更佳為10至20。In the method for preparing a photo-sensing element of the present invention, in the step (D), the G/D ratio obtained by analyzing the plurality of monoterpene carbon nanotubes formed by Raman Scattering Spectrum is obtained. It is preferably from 10 to 25, more preferably from 10 to 20.
本發明之光感測元件之製備方法，其中，該步驟(B)中，該基板較佳為：矽基板、石英基板、一般玻璃基板、耐高溫玻璃基板、或如塑膠基板之可撓性基板。In the method for preparing a light sensing device of the present invention, in the step (B), the substrate is preferably a germanium substrate, a quartz substrate, a general glass substrate, a high temperature resistant glass substrate, or a flexible substrate such as a plastic substrate. .
本發明之光感測元件之製備方法，其中，當光照射至該複數單璧奈米碳管時，較佳該複數單璧奈米碳管之導電度係增加。當所照射之光之光強度提升時，較佳該複數單璧奈米碳管之導電度係增加。In the method of producing a photo-sensing element of the present invention, when light is irradiated to the plurality of monoterpene carbon nanotubes, it is preferred that the conductivity of the plurality of monoterpene carbon nanotubes is increased. When the intensity of the light of the irradiated light is increased, it is preferred that the conductivity of the plurality of individual carbon nanotubes is increased.
本發明另提供一種光感測元件，係包括：一基板；複數單璧奈米碳管，係位於該基板上，該些複數單璧奈米碳管係互相連接形成一網狀結構之薄膜，且該些複數單璧奈米碳管經由拉曼散射光譜(Raman Scattering Spectrum)分析後，所得到之G/D比值為10至25；以及至少二電極，係各自獨立地與該網狀結構之薄膜連接。The present invention further provides a light sensing device, comprising: a substrate; a plurality of single-sized carbon nanotubes, which are disposed on the substrate, and the plurality of single-sized carbon nanotubes are interconnected to form a film of a network structure. And the plurality of monoterpene carbon nanotubes are analyzed by Raman Scattering Spectrum to obtain a G/D ratio of 10 to 25; and at least two electrodes are independently associated with the network structure. Film connection.
本發明之光感測元件具有特殊型態(複數單璧奈米碳管係互相連接形成一網狀結構之薄膜)，其中薄膜厚度依需求可隨意調整，且由於單壁奈米碳管結構完整，因此可應用於各種光感測元件中，並可達到微型化之未來市場需求。The light sensing element of the invention has a special type (a plurality of single-turn carbon nanotubes are interconnected to form a film of a network structure), wherein the thickness of the film can be adjusted as needed, and the structure of the single-walled carbon nanotube is complete. Therefore, it can be applied to various light sensing components and can meet the future market demand for miniaturization.
本發明之光感測元件中，當光照射至該複數單璧奈米碳管時，較佳該複數單璧奈米碳管之導電度係增加。當所照射之光之光強度提升時，較佳該複數單璧奈米碳管之導電度係增加。In the light sensing element of the present invention, when light is irradiated to the plurality of monoterpene carbon nanotubes, it is preferred that the conductivity of the plurality of monoterpene carbon nanotubes is increased. When the intensity of the light of the irradiated light is increased, it is preferred that the conductivity of the plurality of individual carbon nanotubes is increased.
本發明之光感測元件，其中，該G/D比值更佳為10至20。由此，顯見本發明之光感測元件中之單壁奈米碳管為高純度且結構完整之單壁奈米碳管。The light sensing element of the present invention, wherein the G/D ratio is more preferably from 10 to 20. Thus, it is apparent that the single-walled carbon nanotubes in the light sensing element of the present invention are high-purity and structurally intact single-walled carbon nanotubes.
本發明之光感測元件中，該所照射之光之波長範圍較佳可為100nm至700 nm。此波長係涵蓋了可視光400至700 nm以及UV光100nm至400nm之二種範圍。In the light sensing element of the present invention, the wavelength of the irradiated light may preferably range from 100 nm to 700 nm. This wavelength ranges from 400 to 700 nm for visible light and 100 nm to 400 nm for UV light.
本發明之光感測元件中，由複數單璧奈米碳管互相連接形成之該網狀結構薄膜之厚度較佳可為100nm至400nm，而此薄膜厚度依需求可隨意調整。In the light sensing element of the present invention, the thickness of the network structure film formed by interconnecting a plurality of individual tantalum carbon nanotubes is preferably from 100 nm to 400 nm, and the thickness of the film can be arbitrarily adjusted as needed.
本發明之光感測元件中，較佳可更包括一外加電壓單元，係與該至少二電極連接。Preferably, the light sensing device of the present invention further includes an applied voltage unit connected to the at least two electrodes.
本發明之光感測元件中，基板較佳為：矽基板、石英基板、一般玻璃基板、耐高溫玻璃基板、或如塑膠基板之可撓性基板。In the light sensing element of the present invention, the substrate is preferably a germanium substrate, a quartz substrate, a general glass substrate, a high temperature resistant glass substrate, or a flexible substrate such as a plastic substrate.
本發明之光感測元件中，該複數單璧奈米碳管之直徑為0.5至2.0nm，更佳為0.8至1.2nm。In the photo sensing element of the present invention, the plurality of monoterpene carbon nanotubes have a diameter of 0.5 to 2.0 nm, more preferably 0.8 to 1.2 nm.
[實施例][Examples]
本實施例之光感測元件之製備方法，包括如下步驟。首先，(A)將複數含金屬之奈米顆粒(在此係使用醋酸鈷粉末、以及醋酸鉬粉末)放入於一溶劑中以形成一催化劑，在此溶劑係使用乙醇，且醋酸鈷以及醋酸鉬與乙醇之比例為[醋酸鈷以及醋酸鉬：乙醇]=0.01wt%。接著，(B0)提供一透光之石英基板，將該基板基板進行表面處裡，使增加基板表面之親水性。接著，(B)將該基板浸泡於該催化劑中，使基板表面附著有催化劑。而後，(C)將該經浸泡後之基板拿出，並將該基板進行煅燒處理，其中煅燒溫度係為400℃。然後，(D0)提供氨氣與氬氣以使經煅燒後之基板表面進行還原反應，還原反應係以氨氣/氬氣為30/200sccm、溫度為350℃至750℃、以及壓力為15-20torr之條件中進行。接著，(D)加熱該經煅燒與還原處理後之基板至750℃，並同時提供一醇類之成長氣源(在此係使用純度為99.9%以上之乙醇，壓力為690torr，溫度為50℃)，使藉由該醇類之成長氣源於該基板之表面形成複數單璧奈米碳管(成長時間為15分鐘，使用ACCVD儀器)，其中，該些複數單璧奈米碳管係互相連接形成一網狀結構之薄膜，且該網狀結構薄膜之厚度約為350nm。然後，(E)形成二電極於基板之二側，並使該二電極與該複數單璧奈米碳管連接。The method for preparing the light sensing element of the embodiment includes the following steps. First, (A) a plurality of metal-containing nanoparticles (here, using cobalt acetate powder and molybdenum acetate powder) are placed in a solvent to form a catalyst, in which the solvent is ethanol, cobalt acetate and acetic acid. The ratio of molybdenum to ethanol is [cobalt acetate and molybdenum acetate: ethanol] = 0.01 wt%. Next, (B0) provides a transparent quartz substrate, and the substrate is placed in the surface to increase the hydrophilicity of the substrate surface. Next, (B) the substrate was immersed in the catalyst to adhere a catalyst to the surface of the substrate. Then, (C) the immersed substrate was taken out, and the substrate was subjected to calcination treatment, wherein the calcination temperature was 400 °C. Then, (D0) provides ammonia gas and argon gas to carry out a reduction reaction on the surface of the calcined substrate, the reduction reaction is 30/200 sccm of ammonia/argon gas, the temperature is 350 ° C to 750 ° C, and the pressure is 15- In the condition of 20torr. Next, (D) heating the calcined and reduced substrate to 750 ° C, and simultaneously providing a growing gas source of alcohol (in this case, using a purity of 99.9% or more of ethanol, a pressure of 690 torr, a temperature of 50 ° C a plurality of monoterpene carbon nanotubes (growth time of 15 minutes, using an ACCVD apparatus) formed by the growth gas of the alcohol from the surface of the substrate, wherein the plurality of monoterpene carbon nanotubes are mutually A film is formed to form a network structure, and the thickness of the network film is about 350 nm. Then, (E) forming two electrodes on both sides of the substrate, and connecting the two electrodes to the plurality of monoterpene carbon nanotubes.
如圖1所示，其係本實施例所製得之光感測元件1之示意圖，係包括：一透光石英材質之基板11；複數單璧奈米碳管12，係位於該基板11上；以及二個位於基板11二端之電極13，該些複數單璧奈米碳管12係互相連接形成一網狀結構之薄膜14，網狀結構薄膜之厚度約為350nm，且電極13係與該複數單璧奈米碳管12連接。本實施例之光感測元件中網狀結構之薄膜14(主動層部分)為對光敏感之區域，由於兩電極13操作之單壁奈米碳管電子元件在照光後，會吸收光進而轉換成電，因此會有光電流產生。As shown in FIG. 1 , it is a schematic diagram of the light sensing component 1 prepared in the embodiment, comprising: a transparent quartz substrate 11; a plurality of single carbon nanotubes 12 disposed on the substrate 11 And two electrodes 13 at the two ends of the substrate 11, the plurality of monoterpene carbon nanotubes 12 are interconnected to form a film 14 having a mesh structure, the thickness of the network structure film is about 350 nm, and the electrode 13 is The plurality of single carbon nanotubes 12 are connected. In the light sensing element of the embodiment, the film 14 (active layer portion) of the mesh structure is a region sensitive to light, and the single-walled carbon nanotube electronic component operated by the two electrodes 13 absorbs light and then converts it after illumination. It is charged, so there is a photocurrent.
[測試例1][Test Example 1]
為探討本發明之光感測元件在具有不同面積之主動層(網狀結構之薄膜)時產生光電流之情形，因此在本測試例設計數種尺寸大小之光感測元件，並分析照光後之光電流增益。In order to investigate the case where the photo-sensing element of the present invention generates photocurrent when the active layer (film of the mesh structure) has different areas, in this test example, several kinds of light-sensing elements are designed and analyzed after illumination. Light current gain.
本測試例中所使用之測試光源為鹵素燈光源，光源距離實驗樣本約為10cm，調整不同光照強度，如圖2至圖4所示，其分別為通道長度(L)為10μm，寬度(W)各為20,50,100μm之光感測元件，外加偏壓為0~10V時之元件I-V特性圖。詳細地說，圖2係為光感測元件通道長度L=10μm，寬度W=20μm於外加偏壓0~10V時，照射不同光強度之I-V特性圖；圖3係為光感測元件通道長度L=10μm，寬度W=50μm於外加偏壓0~10V時，照射不同光強度之I-V特性圖；且圖4係為光感測元件通道長度L=10μm，寬度W=100μm於外加偏壓0~10V時，照射不同光強度之I-V特性圖。The test light source used in this test example is a halogen light source. The light source is about 10 cm away from the experimental sample, and the different light intensity is adjusted. As shown in Fig. 2 to Fig. 4, the channel length (L) is 10 μm and the width (W). Each of the 20, 50, 100 μm light-sensing elements is provided with an IV characteristic diagram of the component when the bias voltage is 0 to 10V. In detail, FIG. 2 is an IV characteristic diagram of the light sensing element channel length L=10 μm, width W=20 μm, and different light intensity when the bias voltage is 0~10V; FIG. 3 is the light sensing element channel length. L=10μm, width W=50μm, IV characteristic map of different light intensity when the applied bias voltage is 0~10V; and FIG. 4 is the light sensing element channel length L=10μm, width W=100μm to the applied bias voltage0 When ~10V, the IV characteristic map of different light intensities is illuminated.
對同一元件而言，操作時照射光強度較高之光源，可使元件之電流增加，而增加的電流即為光電流。此外，在元件外加偏壓越大的情形之下，光電流之產生值亦越大。For the same component, a light source with a higher intensity of illumination during operation can increase the current of the component, and the increased current is the photocurrent. In addition, in the case where the applied bias voltage is larger, the value of the photocurrent generation is also larger.
此外，為瞭解光感測元件在較小外加偏壓之光電流情形，本測試例再次取用通道長度10μm，寬度100μm之元件在外加偏壓0~2V時進行測試，其結果如圖5所示。由圖5所示之結果，可觀察到於0~2V之較小外加偏壓之條件下，當光強度增加時，元件之電流亦相對增加。因此，可知本發明之光感測元件在較小外加偏壓之條件下，電流亦隨著光強度的增加而上升。In addition, in order to understand the photocurrent of the photo-sensing element with a small bias voltage, this test example takes the channel length of 10μm and the width of 100μm to test when the bias voltage is 0~2V. The result is shown in Figure 5. Show. From the results shown in Fig. 5, it can be observed that under the condition of a small applied bias voltage of 0 to 2 V, when the light intensity increases, the current of the element also relatively increases. Therefore, it can be seen that the current sensing element of the present invention rises with increasing light intensity under a small applied bias voltage.
[測試例2][Test Example 2]
此外，為瞭解本發明之光感測元件在同一長度之下，同一外加偏壓時，不同通道寬度相對不同光強度所產生之電流增益(Photocurrent Gain)大小。本測試例設計數種通道寬度之光感測元件，並分析照光後之光電流增益，其結果如圖6及圖7所示。其中，圖6係於光感測元件通道長度L=20μm時，不同寬度相較不同光強度之光電流增益(外加偏壓為10V)；圖7係於光感測元件通道長度L=10μm時，不同寬度相較不同光強度之光電流增益(外加偏壓為10V)。In addition, in order to understand that the light sensing elements of the present invention are under the same length and the same applied bias voltage, the different current widths of the different channel widths are generated by the photocurrent Gain. In this test example, several channel width light sensing elements are designed, and the photocurrent gain after illumination is analyzed. The results are shown in FIGS. 6 and 7. 6 is a photocurrent gain of different widths compared to different light intensities (applying a bias voltage of 10 V) when the length of the light sensing element is L=20 μm; FIG. 7 is when the length of the light sensing element channel is L=10 μm. The photocurrent gain of different widths compared to different light intensities (additional bias voltage is 10V).
由圖6及圖7中可知，在數種不同尺寸之元件中，產生最佳光電流增益之元件為通道尺寸L=10μm，W=100μm之元件，當光強度為63.5mW/cm2 時，其光電流增益值最大可達8.8，也就是照射到如此強度的光後產生了比原本不照光時約8.8倍的電流。除此之外，亦可由測試結果觀察到在同一照光強度下，當元件主動層尺寸比W/L越大時，其電流增益也越大。而比較兩個主動層面積相同之元件：W=50，L=20與W=100，L=10之光電流增益產生之情形，雖然兩元件主動層之照光面積皆為1000μm2，但可清楚發現後者之增益遠大於前者，因此，從研究結果可以推知，縱使是相同照光面積之元件，W/L尺寸比越大者，會擁有較佳之光電流增益，這是因為在相同通道厚度下，其通道電阻值R與W/L成反比，也就是說W=50,L=20此組之通道電阻值相較W=100μm,L=10μm這組大了4倍，電阻越高之通道越不利電子傳輸至端點電極輸出，因此縱使兩組有相同之照光面積，但電阻越高者產生之光電流也就越低。As can be seen from FIG. 6 and FIG. 7, among the components of different sizes, the component that produces the optimum photocurrent gain is an element having a channel size of L=10 μm and W=100 μm, and when the light intensity is 63.5 mW/cm 2 , The photocurrent gain value is up to 8.8, that is, after exposing such intensity of light, a current of about 8.8 times is generated when the light is not illuminated. In addition, it can be observed from the test results that under the same illumination intensity, when the active layer size ratio W/L of the element is larger, the current gain is also larger. Comparing the two components with the same active layer area: W=50, L=20 and W=100, L=10 photocurrent gain is generated. Although the active area of the two elements is 1000μm2, it can be clearly found. The gain of the latter is much larger than that of the former. Therefore, it can be inferred from the research results that even for components with the same illumination area, the larger the W/L size ratio, the better the photocurrent gain, because at the same channel thickness, The channel resistance value R is inversely proportional to W/L, that is, W=50, L=20. The channel resistance value of this group is 4 times larger than W=100μm, L=10μm, and the higher the resistance, the more unfavorable the channel. The electrons are transmitted to the terminal electrode output, so even if the two groups have the same illumination area, the higher the resistance, the lower the photocurrent.
[測試例3][Test Example 3]
此外，為測試本發明之光感測元件作為開關元件之效力，本測試例進行了照光與不照光之電流測試，其結果如圖8所示。圖8之測試方式為：在照光60秒後，隨即將光源關閉60秒，之後再度開啟光源，如此循環數個週期，測試所收集到之電流。本測試例中，係採用通道尺寸為L=10μm，W=100μm之光感測元件進行測試。Further, in order to test the effectiveness of the light sensing element of the present invention as a switching element, this test example was subjected to a current test of illumination and non-illumination, and the results are shown in FIG. The test mode of Fig. 8 is: after 60 seconds of illumination, the light source is turned off for 60 seconds, and then the light source is turned on again, so that the cycle is counted for several cycles, and the collected current is tested. In this test example, a light sensing element having a channel size of L = 10 μm and W = 100 μm was used for testing.
如圖8所示，可清楚的發現本發明之光感測元件可具有相當好的開關特性，並且，即使經過數次開關(照光與不照光)之反覆操作，其電流亦相當穩定，無巨大的電流變化，由此可知本發明之光感測元件具有相當優秀的穩定性。As shown in FIG. 8, it can be clearly found that the light sensing element of the present invention can have quite good switching characteristics, and even after repeated operations of several switches (illuminated and not illuminated), the current is relatively stable, without huge The change in current allows it to be seen that the light sensing element of the present invention has excellent stability.
[測試例4][Test Example 4]
為探討光感測元件於不同光源照射之效能，本測試例使用紫外(UV)光源以及鹵素光源進行測試。在此使用的UV光源為波長365nm，功率400W之光源，使用的光感測元件之通道長度L=10μm，寬度W=100μm。在同樣照光距離10cm情形下，照射至光感測元件上的UV光強度約為42mW/cm2 ，而鹵素燈光源光強度為63.5 mW/cm2 ，其結果如圖9所示。由圖9所示之結果可看出，在外加偏壓為10V時，照射UV光於光感測元件時，電流增益可達4.88。In order to investigate the efficacy of light-sensing components illuminated by different light sources, this test example uses an ultraviolet (UV) light source and a halogen light source for testing. The UV light source used herein is a light source having a wavelength of 365 nm and a power of 400 W, and the light sensing element used has a channel length L = 10 μm and a width W = 100 μm. Under the same illumination distance of 10cm case, the intensity of UV light is irradiated to the light sensing element is approximately 42mW / cm 2, and the light intensity halogen light source is 63.5 mW / cm 2, the result shown in Fig. As can be seen from the results shown in Fig. 9, when the applied bias voltage is 10 V, when the UV light is irradiated to the light sensing element, the current gain can reach 4.88.
綜上所述，本發明之光感測元件所具有之特性如下：In summary, the characteristics of the light sensing device of the present invention are as follows:
(1)奈米碳管薄膜對光敏感，吸收光後轉為電流輸出，可作為光電感應元件；(1) The carbon nanotube film is sensitive to light, and after being absorbed, it is converted into a current output, which can be used as a photoelectric sensing element;
(2) 當光感測元件之薄膜(主動層)之面積不同時，會有不同的元件光電流增益。而欲得到最佳光電流增益首要條件為減少通道電阻，即增加通道尺寸中寬度與長度之比值。在本發明中，當通道之厚度為約350nm時，欲得到最佳光電流增益之光感測元件，其應具有通道寬度約100μm，長度約10μm(即W/L=10)之條件；(2) When the area of the thin film (active layer) of the light sensing element is different, there will be different component photocurrent gains. The first condition for obtaining the optimal photocurrent gain is to reduce the channel resistance, that is, increase the ratio of the width to the length in the channel size. In the present invention, when the thickness of the channel is about 350 nm, the photo sensing element for obtaining the optimum photocurrent gain should have a channel width of about 100 μm and a length of about 10 μm (ie, W/L=10);
(3)透過光源開啟-關閉之測試，於幾個週期內，可發現本發明之光感測元件可具有相當好的開關特性，並且即使經過數次開關之反覆操作，其光電流產生情形仍相當穩定，並無巨大之電流變化；以及(3) Through the light source on-off test, it can be found in several cycles that the light sensing element of the present invention can have quite good switching characteristics, and even after repeated operations of several switches, the photocurrent generation situation is still Quite stable, no huge current changes;
(4)透過照射UV光源之研究，證實本發明知光感測元件在UV光源照射下亦會產生光電流，因此，本元件除可作為一般可見光光感測元件之外，亦相當適合作為短波長之紫外光感測元件，因此可應用範圍相當廣泛。(4) It has been confirmed by the research of irradiating the UV light source that the photo-sensing element of the present invention also generates a photocurrent under the illumination of the UV light source. Therefore, in addition to being a general visible light photo-sensing element, the element is also suitable as a short. The wavelength of the ultraviolet light sensing element is therefore applicable to a wide range of applications.
上述實施例僅係為了方便說明而舉例而已，本發明所主張之權利範圍自應以申請專利範圍所述為準，而非僅限於上述實施例。The above-mentioned embodiments are merely examples for convenience of description, and the scope of the claims is intended to be limited to the above embodiments.
1．．．光感測元件1. . . Light sensing component
11．．．基板11. . . Substrate
12．．．單壁奈米碳管12. . . Single-walled carbon nanotube
13．．．電極13. . . electrode
14．．．薄膜14. . . film
圖1係本發明實施例1之光感測元件之示意圖。1 is a schematic view of a light sensing element of Embodiment 1 of the present invention.
圖2係本發明測試例1之光感測元件照射不同光強度之I-V特性圖；其所使用之光感測元件通道長度L=10μm，寬度W=20μm。2 is a diagram showing I-V characteristics of different light intensities of the light sensing elements of Test Example 1 of the present invention; the light sensing elements used have a channel length L=10 μm and a width W=20 μm.
圖3係本發明測試例1之光感測元件照射不同光強度之I-V特性圖；其所使用之光感測元件通道長度L=10μm，寬度W=50μm。Fig. 3 is a graph showing I-V characteristics of different light intensities of the light sensing elements of Test Example 1 of the present invention; the light sensing elements used have a channel length L = 10 μm and a width W = 50 μm.
圖4係本發明測試例1之光感測元件照射不同光強度之I-V特性圖；其所使用之光感測元件通道長度L=10μm，寬度W=100μm。Fig. 4 is a graph showing the I-V characteristics of different light intensities of the light sensing elements of Test Example 1 of the present invention; the light sensing elements used have a channel length L = 10 μm and a width W = 100 μm.
圖5係本發明測試例1之光感測元件照射不同光強度之I-V特性圖；其所使用之光感測元件通道長度L=10μm，寬度W=100μm。Fig. 5 is a graph showing I-V characteristics of different light intensities of the light sensing elements of Test Example 1 of the present invention; the light sensing elements used have a channel length L = 10 μm and a width W = 100 μm.
圖6係本發明測試例2中，於光感測元件通道長度L=20μm時，不同寬度相較不同光強度之光電流增益圖。6 is a photocurrent gain diagram of different widths of different light intensities when the light sensing element channel length L=20 μm in Test Example 2 of the present invention.
圖7係本發明測試例2中，於光感測元件通道長度L=10μm時，不同寬度相較不同光強度之光電流增益圖。Fig. 7 is a photocurrent gain diagram of different widths of different light intensities when the light sensing element channel length L = 10 μm in Test Example 2 of the present invention.
圖8係本發明測試例3中，光感測元件照光與不照光之電流測試圖。Fig. 8 is a graph showing the current test of the light-sensing element in the test example 3 of the present invention.
圖9係本發明測試例4中，光感測元件於不同光源照射之效能測試圖。Fig. 9 is a graph showing the performance test of the light sensing elements illuminated by different light sources in Test Example 4 of the present invention.
1．．．光感測元件1. . . Light sensing component
11．．．基板11. . . Substrate
12．．．單壁奈米碳管12. . . Single-walled carbon nanotube
13．．．電極13. . . electrode
14．．．薄膜14. . . film
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| TWI622758B (en) * | 2016-01-22 | 2018-05-01 | 鴻海精密工業股份有限公司 | Optical recognition switch device |
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| Publication number | Publication date |
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| TW201228003A (en) | 2012-07-01 |
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