TWI433171B - Thermistor - Google Patents
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本發明係關於一種熱敏電阻元件，特別是於高溫時具有高維持電流之熱敏電阻元件。The present invention relates to a thermistor element, particularly a thermistor element having a high holding current at high temperatures.
由於具有正溫度係數(Positive Temperature Coefficient；PTC)或負溫度係數(Negative Temperature Coefficient；NTC)特性之導電複合材料之電阻對溫度變化具有反應敏銳的特性，可作為電流感測元件之材料。以PTC為例，由於PTC導電複合材料在正常溫度下之電阻可維持極低值，使電路或電池得以正常運作。但是，當電路或電池發生過電流(over-current)或過高溫(over-temperature)的現象時，其電阻值會瞬間提高至一高電阻狀態(至少102 Ω以上)，而將過量之電流降低，以達到保護電池或電路元件之目的。Since the electrical resistance of the conductive composite material having a positive temperature coefficient (PTC) or a negative temperature coefficient (NTC) characteristic is sensitive to temperature changes, it can be used as a material of the current sensing element. Taking PTC as an example, since the resistance of the PTC conductive composite at normal temperature can be maintained at a very low value, the circuit or the battery can operate normally. However, when an over-current or over-temperature phenomenon occurs in a circuit or battery, the resistance value is instantaneously increased to a high resistance state (at least 10 2 Ω or more), and excess current is generated. Reduced for the purpose of protecting the battery or circuit components.
PTC導電複合材料係由一種或一種以上具結晶性之聚合物及導電填料所組成。聚合物一般為聚烯烴類聚合物，例如：聚乙烯，而導電填料一般為碳黑。然而，以碳黑作為導電填料之PTC元件因為受到材料熱焓(thermal mass)不足且電阻較高的影響，導致其維持電流(hold current)較低，特別是當溫度升高時，其維持電流將迅速降低，故無法滿足大電流之二次電池之保護使用。The PTC conductive composite material is composed of one or more crystalline polymers and conductive fillers. The polymer is typically a polyolefin based polymer such as polyethylene and the electrically conductive filler is typically carbon black. However, a PTC element using carbon black as a conductive filler suffers from a low thermal mass of the material and a high resistance, resulting in a low hold current, particularly when the temperature is raised, the current is maintained. It will be rapidly reduced, so it cannot meet the protection of secondary batteries with high current.
為了克服傳統使用碳黑之PTC元件維持電流較低的問題，本發明使用不同的導電填料及成分比例，使得PTC元件於高溫仍具有高維持電流。本發明之熱敏電阻元件可搭配二次電池的電路設計，以滿足大電流二次電池保護使用。In order to overcome the problem that the conventional PTC element using carbon black maintains a low current, the present invention uses different conductive fillers and composition ratios so that the PTC element still has a high holding current at a high temperature. The thermistor element of the invention can be matched with the circuit design of the secondary battery to meet the protection of the high current secondary battery.
本發明一實施例之熱敏電阻元件包括：第一導電構件、第二導電構件以及高分子材料層。該高分子材料層係疊設於第一導電構件及第二導電構件之間，且具有正溫度係數之特性，該高分子材料層包含至少一結晶性高分子聚合物及散佈於該結晶性高分子聚合物中之至少一導電填料。該導電填料選自金屬粉末或導電碳化陶瓷粉末，且該導電填料佔該高分子材料層之重量百分比介於72~96%。該熱敏電阻元件具有一元件面積，於60℃時，其對應之維持電流除以該元件面積之值介於0.16A/mm2 ~0.8A/mm2 之間。其中該熱敏電阻元件於60℃之維持電流與25℃之維持電流之比值介於65~95%。The thermistor element according to an embodiment of the invention includes a first conductive member, a second conductive member, and a polymer material layer. The polymer material layer is stacked between the first conductive member and the second conductive member and has a positive temperature coefficient. The polymer material layer comprises at least one crystalline polymer and is dispersed in the crystallinity. At least one electrically conductive filler in the molecular polymer. The conductive filler is selected from the group consisting of metal powder or conductive carbonized ceramic powder, and the conductive filler accounts for 72% to 96% by weight of the polymer material layer. The thermistor element has a component area, and the corresponding sustain current divided by the element area at 60 ° C is between 0.16 A/mm 2 and 0.8 A/mm 2 . The ratio of the holding current of the thermistor element at 60 ° C to the holding current of 25 ° C is between 65 and 95%.
一實施例中，熱敏電阻元件於60℃對應之維持電流之熱切斷溫度(Thermal Cut-Off；TCO)小於95℃。前述TCO溫度並非限制於60℃所對應之維持電流。另外亦可利用於溫度T對應之維持電流加以定義如下：於溫度T對應之維持電流之TCO溫度小於T+35℃，其中T≧60℃。In one embodiment, the thermistor element has a thermal cut-off (TCO) of less than 95 ° C at 60 ° C. The aforementioned TCO temperature is not limited to the sustain current corresponding to 60 °C. Alternatively, the sustain current corresponding to the temperature T can be defined as follows: the TCO temperature of the sustain current corresponding to the temperature T is less than T+35 ° C, where T ≧ 60 ° C.
一實施例中，本發明之熱敏電阻元件係以焊接方式電氣連接保護電路模組(Protection Circuit Module；PCM)及二次電池成串聯或並聯結構。其中焊接包含點焊、迴焊、超音波焊接或雷射焊接。In one embodiment, the thermistor element of the present invention is electrically connected to a protection circuit module (PCM) and a secondary battery in a series or parallel configuration. The welding includes spot welding, reflow soldering, ultrasonic welding or laser welding.
為讓本發明之上述和其他技術內容、特徵和優點能更明顯易懂，下文特舉出相關實施例，並配合所附圖式，作詳細說明如下：The above and other technical contents, features and advantages of the present invention will become more apparent from the following description.
本發明熱敏電阻元件所使用之高分子材料層之成份及重量(單位：公克)如表一所示。其中LDPE-1係低密度結晶性聚乙烯(密度：0.924g/cm3 ，熔點：113℃)；HDPE-1係高密度結晶性聚乙烯(密度：0.943g/cm3 ，熔點：125℃)；HDPE-2係高密度結晶性聚乙烯(密度：0.961g/cm3 ，熔點：131℃)。導電填料則選用碳化鈦(TiC)、碳化鎢(WC)及碳化鉬(MoC)等。本發明實施例中，導電填料佔高分子材料層之重量百分比介於72~96%，特別是介於75~94%，較佳地介於78~92%。導電填料佔高分子材料層之重量百分比亦可為74%、78%、80%、85%或90%。LDPE-1佔該高分子材料層之重量百分比小於5%或較佳地小於3%。HDPE-1和HDPE-2之總和佔該高分子材料層之重量百分比介於3~25%或較佳介於5~20%之間。特而言之，較低密度之HDPE-1佔該高分子材料層之重量百分比約小於20%，較高密度之HDPE-2佔該高分子材料層之重量百分比約小於20%。高密度聚乙烯HDPE-1和HDPE-2之熔點均大於115℃。The composition and weight (unit: gram) of the polymer material layer used in the thermistor element of the present invention are shown in Table 1. Among them, LDPE-1 is a low-density crystalline polyethylene (density: 0.924 g/cm 3 , melting point: 113 ° C); HDPE-1 is a high-density crystalline polyethylene (density: 0.943 g/cm 3 , melting point: 125 ° C) HDPE-2 is a high density crystalline polyethylene (density: 0.961 g/cm 3 , melting point: 131 ° C). Titanium carbide (TiC), tungsten carbide (WC) and molybdenum carbide (MoC) are used for the conductive filler. In the embodiment of the present invention, the conductive filler accounts for 72 to 96% by weight of the polymer material layer, particularly 75 to 94%, preferably 78 to 92%. The conductive filler may also be 74%, 78%, 80%, 85% or 90% by weight of the polymer material layer. The weight percentage of the LDPE-1 to the polymer material layer is less than 5% or preferably less than 3%. The sum of HDPE-1 and HDPE-2 accounts for 3 to 25% by weight or preferably between 5 and 20% by weight of the polymer material layer. In particular, the lower density HDPE-1 accounts for less than about 20% by weight of the polymer material layer, and the higher density HDPE-2 accounts for less than about 20% by weight of the polymer material layer. The melting points of high density polyethylene HDPE-1 and HDPE-2 are both greater than 115 °C.
製作過程如下：將批式混錬機(Haake-600)進料溫度定在160℃，進料時間為2分鐘，進料程序為按表一所示之重量，加入定量的結晶性高分子聚合物，攪拌數秒鐘，再加入導電碳化陶瓷填料碳化鈦粉末(其粒徑大小係介於0.1μm至50μm之間)。混鍊機旋轉之轉速為40rpm。3分鐘之後，將其轉速提高至70rpm，繼續混錬7分鐘後下料，而形成一具有PTC特性之導電複合材料。The production process is as follows: the batch temperature of the batch mixer (Haake-600) is set at 160 ° C, the feeding time is 2 minutes, and the feeding procedure is the weight shown in Table 1, and the quantitative crystalline polymer polymerization is added. The mixture was stirred for a few seconds, and then a conductive carbonized ceramic filler titanium carbide powder (having a particle size of between 0.1 μm and 50 μm) was further added. The speed of the chain mixer rotation was 40 rpm. After 3 minutes, the rotation speed was increased to 70 rpm, and the mixture was further mixed for 7 minutes to be discharged, thereby forming a conductive composite material having PTC characteristics.
將上述導電複合材料以上下對稱方式置入外層為鋼板，中間厚度為0.33mm及0.2mm之模具中，模具上下各置一層鐵弗龍脫模布，先預壓3分鐘，預壓操作壓力50kg/cm2 ，溫度為180℃。排氣之後進行壓合，壓合時間為3分鐘，壓合壓力控制在100kg/cm2 ，溫度為180℃，之後再重覆一次壓合動作，壓合時間為3分鐘，壓合壓力控制在150kg/cm2 ，溫度為180℃，之後形成一高分子PTC材料層。一實施例中，該PTC材料層之厚度大於0.1mm，較佳地大於0.2mm或0.3mm。The above conductive composite material is placed in a lower symmetrical manner into a steel sheet having a thickness of 0.33 mm and a thickness of 0.2 mm in the middle, and a layer of Teflon stripping cloth is placed on the upper and lower sides of the mold, and the pre-pressing pressure is 50 kg. /cm 2 , the temperature is 180 °C. After the exhausting, the pressing is performed for 3 minutes, the pressing pressure is controlled at 100 kg/cm 2 , the temperature is 180 ° C, and then the pressing action is repeated once, the pressing time is 3 minutes, and the pressing pressure is controlled. 150 kg/cm 2 and a temperature of 180 ° C, after which a polymer PTC material layer was formed. In one embodiment, the PTC material layer has a thickness greater than 0.1 mm, preferably greater than 0.2 mm or 0.3 mm.
將該PTC材料層裁切成20×20cm2 之正方形，再利用壓合將二金屬箔片直接物理性接觸於該PTC材料層上下表面，其係於該PTC材料層表面以上下對稱方式依序覆蓋金屬箔片。接著，壓合專用緩衝材、鐵弗龍脫模布及鋼板而形成一多層結構。該多層結構再進行壓合形成緻密結構，壓合時間為3分鐘，操作壓力為70kg/cm2 ，溫度為180℃。之後，以模具衝切形成晶片狀熱敏電阻元件10，如圖1所示。熱敏電阻元件10之晶片尺寸係小於25mm2 ，或較佳地小於20mm2 。The PTC material layer is cut into a square of 20×20 cm 2 , and then the two metal foils are directly physically contacted with the upper and lower surfaces of the PTC material layer by pressing, which are sequentially symmetrical on the surface of the PTC material layer. Cover the metal foil. Next, a special cushioning material, a Teflon release cloth, and a steel plate are pressed to form a multilayer structure. The multilayer structure was further pressed to form a dense structure having a press time of 3 minutes, an operating pressure of 70 kg/cm 2 and a temperature of 180 °C. Thereafter, the wafer-shaped thermistor element 10 is die-cut by a die as shown in FIG. The thermistor element 10 has a wafer size of less than 25 mm 2 , or preferably less than 20 mm 2 .
申言之，熱敏電阻元件10包含相當於前述金屬箔片之第一導電構件11、第二導電構件12以及高分子材料層13。較佳地，熱敏電阻元件10製程中可經熱壓，以形成緻密結構。熱敏電阻元件10中該高分子材料層13與同體積之該結晶性高分子聚合物之重量比值(即兩者之密度比值)介於2.5~12之間，較佳地介於3~10之間。In other words, the thermistor element 10 includes the first conductive member 11 , the second conductive member 12 , and the polymer material layer 13 corresponding to the metal foil described above. Preferably, the thermistor element 10 can be hot pressed during the process to form a dense structure. The weight ratio of the polymer material layer 13 to the crystalline polymer of the same volume in the thermistor element 10 (ie, the density ratio of the two) is between 2.5 and 12, preferably between 3 and 10. between.
依製程需要，可再將二金屬電極片22以錫膏(solder paste)藉著迴焊方式上下連接於該二導電構件11和12上，製成軸狀式之熱敏電阻元件20。According to the process, the two metal electrode sheets 22 can be connected to the two conductive members 11 and 12 by a solder paste by means of a solder paste to form a shaft-shaped thermistor element 20.
除上述表列之材料外，高分子材料層可選用具結晶性的聚烯烴類聚合物(例如高密度聚乙烯、中密度聚乙烯、低密度聚乙烯、聚乙烯蠟、乙烯聚合物、聚丙烯、聚氯乙烯或聚氟乙烯等)、烯烴類單體與壓克力類單體之共聚合物(例如乙烯-壓克力酸共聚合物、乙烯-壓克力脂共聚合物)或烯烴類單體與乙烯醇類單體之共聚合物(例如乙烯-乙烯醇共聚合物)等，並且可以選用一種或多種聚合物材料。該低密度聚乙烯可用傳統Ziegler-Natta催化劑或用Metallocene催化劑聚合而成，亦可經由乙烯單體與其它單體(例如：丁烯(butene)、己烯(hexene)、辛烯(octene)、丙烯酸(acrylic acid)或醋酸乙烯酯(vinyl acetate))共聚合而成。In addition to the materials listed above, the polymer material layer may be selected from crystalline polyolefin polymers (such as high density polyethylene, medium density polyethylene, low density polyethylene, polyethylene wax, ethylene polymer, polypropylene). , polyvinyl chloride or polyvinyl fluoride, etc.), a copolymer of an olefin monomer and an acrylic monomer (for example, an ethylene-acrylic acid copolymer, an ethylene-acrylic acid copolymer) or an olefin A copolymer of a monomer-like monomer and a vinyl alcohol monomer (for example, an ethylene-vinyl alcohol copolymer), and the like, and one or more polymer materials may be selected. The low density polyethylene can be polymerized by a conventional Ziegler-Natta catalyst or with a Metallocene catalyst, or via an ethylene monomer with other monomers (eg, butene, hexene, octene, Acrylic acid or vinyl acetate is copolymerized.
導電填料可選自金屬粉末或導電碳化陶瓷粉末。其中該金屬粉末可選自：鎳、鈷、銅、鐵、錫、鉛、銀、金、鉑、釩或其合金；該導電碳化陶瓷粉末可選自：碳化鈦、碳化鎢、碳化釩、碳化硼、碳化鋯、碳化鈮、碳化鉭、碳化鉬、碳化鉿。導電碳化陶瓷填料外型包含破碎狀、多角型、球形或片狀，粒徑大小係介於0.1μm至50μm之間。The electrically conductive filler may be selected from metal powders or electrically conductive carbonized ceramic powders. Wherein the metal powder may be selected from the group consisting of nickel, cobalt, copper, iron, tin, lead, silver, gold, platinum, vanadium or alloys thereof; the conductive carbonized ceramic powder may be selected from the group consisting of: titanium carbide, tungsten carbide, vanadium carbide, carbonization Boron, zirconium carbide, niobium carbide, niobium carbide, molybdenum carbide, niobium carbide. The shape of the conductive carbonized ceramic filler comprises a crushed shape, a polygonal shape, a spherical shape or a sheet shape, and the particle size is between 0.1 μm and 50 μm.
參照表二，一實施例中，熱敏電阻元件10係進行維持電流(I-hold)測試。在此，維持電流係表示在某一溫度下不造成熱敏電阻元件10觸發(trip)之最大電流。於60℃時，I-hold/晶片面積之值約為0.16~0.8A/mm2 ，特別是0.18~0.75A/mm2 ，較佳為0.2~0.7A/mm2 之間。I-hold/晶片面積之值亦可為0.3A/mm2 、0.4A/mm2 、0.5A/mm2 或0.6A/mm2 等。通常在較小的元件面積尺寸下，具有較大的I-hold。故熱敏電阻元件10之元件面積以小於25mm2 為較佳。採用碳黑系統作為導電填料之比較例1和2之維持電流均小於0.05A/mm2 ，不適合大電流之應用。Referring to Table 2, in one embodiment, the thermistor element 10 is subjected to a sustain current (I-hold) test. Here, the sustain current indicates the maximum current that does not cause the thermistor element 10 to trip at a certain temperature. The I-hold/wafer area has a value of about 0.16 to 0.8 A/mm 2 at 60 ° C, particularly 0.18 to 0.75 A/mm 2 , preferably 0.2 to 0.7 A/mm 2 . The value of the I-hold/wafer area may also be 0.3 A/mm 2 , 0.4 A/mm 2 , 0.5 A/mm 2 or 0.6 A/mm 2 or the like. Usually with a larger I-hold at a smaller component area size. Therefore, the element area of the thermistor element 10 is preferably less than 25 mm 2 . Comparative Examples 1 and 2 using a carbon black system as a conductive filler have a holding current of less than 0.05 A/mm 2 and are not suitable for high current applications.
熱敏電阻元件10於60℃和25℃之維持電流比值(I-hold＠60℃/I-hold＠25℃)係介於65~95%之間，亦即I-hold隨溫度升高時之下降速率較慢，相較於傳統碳黑系統之比較例1和2，I-hold＠60℃/I-hold＠25℃均小於30%。由此可見，本發明之熱敏電阻元件10可於高溫時仍具有高維持電流，亦即其I-hold的隨溫度升高的降幅可大幅降低，如圖2之示意圖所示。The ratio of the holding current of the thermistor element 10 at 60 ° C and 25 ° C (I-hold@60 ° C / I-hold @ 25 ° C) is between 65 and 95%, that is, the I-hold increases with temperature. The rate of decline is slower, compared to Comparative Examples 1 and 2 of the conventional carbon black system, I-hold@60 ° C / I-hold @ 25 ° C are less than 30%. It can be seen that the thermistor element 10 of the present invention can still have a high holding current at a high temperature, that is, the decrease in the I-hold with temperature can be greatly reduced, as shown in the schematic diagram of FIG.
另外，本發明將熱敏電阻元件於烘箱內通以I-hold相關電流進行熱切斷溫度(Thermal Cut-Off；TCO)測試。當烘箱內溫度逐漸升高至熱敏電阻元件觸發大幅限制電流時所對應的溫度即為TCO溫度。In addition, the present invention conducts a thermal cut-off (TCO) test by passing the thermistor element through an I-hold related current in an oven. The temperature corresponding to the temperature rises in the oven until the thermistor element triggers a large current limit is the TCO temperature.
本實施例中，利用60℃下對應之I-hold進行測試，其結果如表三所示。以I-hold＠60℃進行測試，各晶片之TCO溫度均小於95℃，特別是小於90℃，甚至小於85℃。就範圍而言，I-hold＠60℃對應之TCO溫度範圍介於60~95℃，特別是介於65~85℃。就實務上，TCO溫度亦可於其他大於等於60℃對應之維持電流進行量測，其需符合於溫度T對應之維持電流之熱切斷溫度小於T+35℃，其中T≧60℃。In this embodiment, the test is performed using the corresponding I-hold at 60 ° C, and the results are shown in Table 3. Tested at I-hold@60 ° C, the TCO temperature of each wafer was less than 95 ° C, especially less than 90 ° C, or even less than 85 ° C. In terms of range, I-hold@60°C corresponds to a TCO temperature range of 60 to 95 ° C, especially between 65 and 85 ° C. In practice, the TCO temperature can also be measured at other sustain currents corresponding to 60 ° C or higher, which is required to meet the thermal cut-off temperature of the holding current corresponding to the temperature T of less than T + 35 ° C, where T ≧ 60 ° C.
以下係將熱敏電阻元件10於二次電池保護之應用實施例進行說明。Hereinafter, an application example of the thermistor element 10 in secondary battery protection will be described.
參照圖3，該熱敏電阻元件10可串接形成於保護電路模組(Protective Circuit Module；PCM)30上，再以串聯二次電池31、32及負載33形成迴路，藉此當過電流發生時，熱敏電阻元件10可即時降低電流，而對於二次電池31和32進行過電流保護。一實施例中，熱敏電阻10與二次電池31和32或PCM 30間以點焊、迴焊、超音波焊接、雷射焊接進行電氣連接。Referring to FIG. 3, the thermistor element 10 can be formed in series on a protective circuit module (PCM) 30, and then a circuit is formed by the series secondary batteries 31, 32 and the load 33, thereby generating an overcurrent. At the time, the thermistor element 10 can instantaneously reduce the current while overcurrent protection is applied to the secondary batteries 31 and 32. In one embodiment, the thermistor 10 is electrically connected to the secondary batteries 31 and 32 or the PCM 30 by spot welding, reflow soldering, ultrasonic welding, and laser welding.
參照圖4，本實施例係並聯二次電池31和32，二次電池31和32各自串聯一熱敏電阻元件10，提供較大電流之過電流保護。一實施例中，熱敏電阻10與二次電池31和32或PCM 30間以點焊、迴焊、超音波焊接、雷射焊接進行電氣連接。Referring to Fig. 4, in the present embodiment, secondary batteries 31 and 32 are connected in parallel, and secondary batteries 31 and 32 are each connected in series with a thermistor element 10 to provide overcurrent protection for a large current. In one embodiment, the thermistor 10 is electrically connected to the secondary batteries 31 and 32 or the PCM 30 by spot welding, reflow soldering, ultrasonic welding, and laser welding.
綜上，本發明之熱敏電阻元件之維持電流具有較低之溫度依存性，亦即維持電流隨溫度上升而下降之幅度較小，故於高溫時其仍具有高維持電流，從而本發明之熱敏電阻元件可搭配二次電池的電路設計，以滿足大電流二次電池保護使用。In summary, the sustain current of the thermistor element of the present invention has a lower temperature dependency, that is, the magnitude of the decrease in the sustain current with temperature rise is small, so that it still has a high sustain current at a high temperature, so that the present invention The thermistor component can be matched with the circuit design of the secondary battery to meet the protection of the high current secondary battery.
本發明之技術內容及技術特點已揭示如上，然而熟悉本項技術之人士仍可能基於本發明之教示及揭示而作種種不背離本發明精神之替換及修飾。因此，本發明之保護範圍應不限於實施例所揭示者，而應包括各種不背離本發明之替換及修飾，並為以下之申請專利範圍所涵蓋。The technical and technical features of the present invention have been disclosed as above, and those skilled in the art can still make various substitutions and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the present invention should be construed as being limited by the scope of the appended claims
10、20．．．熱敏電阻元件10, 20. . . Thermistor element
11．．．第一導電構件11. . . First conductive member
12．．．第二導電構件12. . . Second conductive member
13．．．高分子材料層13. . . Polymer layer
22．．．金屬電極片twenty two. . . Metal electrode
30．．．保護電路模組30. . . Protection circuit module
31、32．．．電池31, 32. . . battery
33．．．負載33. . . load
圖1係本發明一實施例之熱敏電阻元件示意圖；1 is a schematic view of a thermistor element according to an embodiment of the present invention;
圖2係熱敏電阻元件之維持電流與溫度關係示意圖；2 is a schematic diagram showing the relationship between the holding current and the temperature of the thermistor element;
圖3係本發明第一實施例之熱敏電阻元件於二次電池之應用示意圖；以及3 is a schematic view showing the application of the thermistor element of the first embodiment of the present invention to a secondary battery;
圖4係本發明第二實施例之熱敏電阻元件於二次電池之應用示意圖。4 is a schematic view showing the application of the thermistor element of the second embodiment of the present invention to a secondary battery.
10、20．．．熱敏電阻元件10, 20. . . Thermistor element
11．．．第一導電構件11. . . First conductive member
12．．．第二導電構件12. . . Second conductive member
13．．．高分子材料層13. . . Polymer layer
22．．．金屬電極片twenty two. . . Metal electrode
Claims (15)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100149430A TWI433171B (en) | 2011-12-29 | 2011-12-29 | Thermistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100149430A TWI433171B (en) | 2011-12-29 | 2011-12-29 | Thermistor |
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| Publication Number | Publication Date |
|---|---|
| TW201327588A TW201327588A (en) | 2013-07-01 |
| TWI433171B true TWI433171B (en) | 2014-04-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| TW100149430A TWI433171B (en) | 2011-12-29 | 2011-12-29 | Thermistor |
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| TW (1) | TWI433171B (en) |
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| CN108447634B (en) * | 2018-01-26 | 2020-01-10 | 昆山聚达电子有限公司 | Surface-mounted thermistor assembly |
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| TW201327588A (en) | 2013-07-01 |
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