TWI426576B - Method for extracting dielectric thickness - Google Patents
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- TWI426576B TWI426576B TW100129153A TW100129153A TWI426576B TW I426576 B TWI426576 B TW I426576B TW 100129153 A TW100129153 A TW 100129153A TW 100129153 A TW100129153 A TW 100129153A TW I426576 B TWI426576 B TW I426576B
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本發明有關於一種測量氧化層厚度的方法，且特別是有關於一種測量金氧半電容元件之氧化層厚度的方法。The present invention relates to a method of measuring the thickness of an oxide layer, and more particularly to a method of measuring the thickness of an oxide layer of a gold-oxygen half-capacitance element.
隨著半導體技術的發展，各式各樣半導體元件的尺寸也不斷的縮小。一般來說，為了積體電路的產量增加，並且降低每個積體電路的成本，往往希望能在相同尺寸的材料面積內可以放入更多的半導體元件。因此，為了減少每個半導體元件所占之面積，半導體元件必須採微縮的設計。然而，越來越小的半導體元件除了製造困難之外，檢測微縮後的半導體元件也越來越不容易。With the development of semiconductor technology, the size of various semiconductor components has been continuously reduced. In general, in order to increase the output of integrated circuits and to reduce the cost per integrated circuit, it is often desirable to be able to place more semiconductor components in the same size of material. Therefore, in order to reduce the area occupied by each semiconductor element, the semiconductor element must be designed to be miniature. However, in addition to manufacturing difficulties, smaller and smaller semiconductor components are becoming more and more difficult to detect the semiconductor components after the miniaturization.
一般來說，金氧半電容元件之氧化層的厚度對積體電路的表現影響相當大，因此在製作積體電路時均需對氧化層進行量測。傳統上，氧化層的厚度可以使用橢圓測試儀量測，由反射光平行分量的振幅、垂直分量的振幅以及相位偏移來分析氧化層之厚度與折射率。另一方面，氧化層之厚度也可以透過金氧半電容元件之電容-電壓(C-V)之量測來取得氧化層之厚度。In general, the thickness of the oxide layer of the gold-oxygen half-capacitor element has a considerable influence on the performance of the integrated circuit, so the oxide layer needs to be measured in the production of the integrated circuit. Conventionally, the thickness of the oxide layer can be measured using an elliptical tester, and the thickness and refractive index of the oxide layer are analyzed from the amplitude of the parallel component of the reflected light, the amplitude of the vertical component, and the phase shift. On the other hand, the thickness of the oxide layer can also be measured by the capacitance-voltage (C-V) of the gold-oxygen half-capacitance element to obtain the thickness of the oxide layer.
值得注意的是，當金氧半電容元件的尺寸過小時，設置於金氧半電容元件閘極的氧化層將十分地薄，此時量子力學效應將會變得十分顯著而無法忽略。因此，對超薄的氧化層來說，傳統的測量方式將會有極大的誤差，故需要一種新的可以準確地測量氧化層厚度的方法，方能符合業界的需要。It is worth noting that when the size of the gold-oxygen half-capacitance element is too small, the oxide layer provided on the gate of the gold-oxygen half-capacitance element will be very thin, and the quantum mechanical effect will become very significant and cannot be ignored. Therefore, for ultra-thin oxide layers, the traditional measurement method will have great error, so a new method for accurately measuring the thickness of the oxide layer is needed to meet the needs of the industry.
本發明實施例在於提供一種測量氧化層厚度的方法，僅需利用傳統的測量儀器，於測量出電壓電流對應關係後，將所述電壓電流對應關係微分，便可推算出金氧半電容元件之氧化層的各種厚度。The embodiment of the invention provides a method for measuring the thickness of the oxide layer, which can be deduced from the corresponding relationship between the voltage and current after measuring the corresponding relationship between the voltage and the current by using a conventional measuring instrument. Various thicknesses of the oxide layer.
本發明實施例提供一種測量氧化層厚度的方法，用於測量金氧半電容元件之氧化層的未知厚度，所述方法包括下列步驟。首先，產生一電壓電流對應關係，所述電壓電流對應關係具有複數個第一閘極電壓與複數個第一漏電流密度，每一個第一閘極電壓與對應第一閘極電壓之第一漏電流密度形成一取樣點。接著，將每一個第一漏電流密度分別對對應之第一閘極電壓進行微分運算，以產生微分後之電壓電流對應關係。接著，自所述多個第一閘極電壓中，選擇一第一氧化層平能帶電壓，第一氧化層平能帶電壓係對應微分後之多個第一漏電流密度的最小值。接著，依據第一氧化層平能帶電壓，自電壓電流對應關係中，選擇一目標漏電流密度，目標漏電流密度係對應氧化層平能帶電壓。最後，將目標漏電流密度代入預設查找表，以計算氧化層的未知厚度。Embodiments of the present invention provide a method of measuring the thickness of an oxide layer for measuring an unknown thickness of an oxide layer of a gold-oxygen half-capacitance element, the method comprising the following steps. First, a voltage-current correspondence is generated, the voltage-current correspondence has a plurality of first gate voltages and a plurality of first leakage current densities, and each of the first gate voltages and the first drain corresponding to the first gate voltage The current density forms a sampling point. Then, each of the first leakage current densities is separately subjected to a differential operation on the corresponding first gate voltage to generate a voltage-current correspondence relationship after the differentiation. Next, a first oxide layer flat band voltage is selected from the plurality of first gate voltages, and the first oxide layer flat band voltage corresponds to a minimum value of the plurality of first leak current densities after the differentiation. Then, according to the flat voltage of the first oxide layer, a target leakage current density is selected from the correspondence relationship between the voltage and the current, and the target leakage current density corresponds to the flat band voltage of the oxide layer. Finally, the target leakage current density is substituted into a preset lookup table to calculate the unknown thickness of the oxide layer.
在本發明一示範實施例中，在將目標漏電流密度代入預設查找表的步驟之前，更可將目標漏電流密度取自然對數。此外，預設查找表可記錄複數個第二氧化層平能帶電壓以及複數個第二漏電流密度，每一個第二氧化層平能帶電壓以及每一個第二漏電流密度係對應氧化層的複數個已知厚度其中之一。另外，預設查找表更可將所述多個第二漏電流密度取自然對數後，進行一線性迴歸運算以產生一參考線，於所述參考線上，每一個已知厚度可對應取自然對數後之估計漏電流密度。In an exemplary embodiment of the invention, the target leakage current density may be taken as a natural logarithm before the step of substituting the target leakage current density into the preset lookup table. In addition, the preset lookup table may record a plurality of second oxide layer flat band voltages and a plurality of second drain current densities, each of the second oxide layer flat band voltages and each of the second drain current densities corresponding to the oxide layer One of a plurality of known thicknesses. In addition, the preset lookup table may further perform a linear regression operation on the plurality of second leakage current densities to generate a reference line, and each known thickness may correspond to the natural logarithm on the reference line. Estimated leakage current density.
綜上所述，本發明實施例所提供的測量氧化層厚度的方法，可利用傳統的測量儀器測量電壓電流對應關係，不需額外增加設備成本。因此，本發明有別於傳統的測量方式，對超薄的氧化層來說，本發明之測量氧化層厚度的方法可以以最小成本而準確地測量氧化層厚度，十分符合業界的需要。In summary, the method for measuring the thickness of the oxide layer provided by the embodiment of the present invention can measure the voltage-current corresponding relationship by using a conventional measuring instrument without additional equipment cost. Therefore, the present invention is different from the conventional measurement method. For the ultra-thin oxide layer, the method for measuring the thickness of the oxide layer of the present invention can accurately measure the thickness of the oxide layer with minimum cost, which is in line with the needs of the industry.
為使能更進一步瞭解本發明之特徵及技術內容，請參閱以下有關本發明之詳細說明與附圖，然而所附圖式僅提供參考與說明用，並非用來對本發明加以限制者。For a better understanding of the features and technical aspects of the present invention, reference should be made to the accompanying drawings.
[測量氧化層厚度的方法實施例][Method Example of Measuring Oxide Layer Thickness]
請一併參見圖1、圖2與圖3，圖1係繪示依據本發明一示範實施例之測量氧化層厚度的方法之流程圖。圖2係繪示依據本發明一示範實施例之金氧半電容元件之剖面圖。圖3係繪示依據本發明一示範實施例之電壓電流對應關係之曲線圖。特別是，圖3中指示了複數個已知氧化層厚度及一未知的氧化層厚度的電壓電流對應關係。如圖所示，金氧半電容元件2一般可具有基板20、氧化層22、閘極24以及背面金屬電極26，而基板20位於氧化層22與背面金屬電極26之間，氧化層22位於閘極24與基板20之間。在此，本發明之測量氧化層厚度的方法係用於測量金氧半電容元件2之氧化層22的厚度。特別是，當氧化層22厚度小於1.8nm時，有別於傳統的測量方式無法準確計算氧化層22的厚度，本發明搭配著已知厚度氧化層的結果可以準確地測量氧化層22的實際厚度。Referring to FIG. 1 , FIG. 2 and FIG. 3 , FIG. 1 is a flow chart of a method for measuring the thickness of an oxide layer according to an exemplary embodiment of the invention. 2 is a cross-sectional view of a gold-oxygen half-capacitance element in accordance with an exemplary embodiment of the present invention. FIG. 3 is a graph showing voltage-current correspondence according to an exemplary embodiment of the present invention. In particular, the voltage-current correspondence of a plurality of known oxide layer thicknesses and an unknown oxide layer thickness is indicated in FIG. As shown, the gold-oxygen half-capacitance element 2 can generally have a substrate 20, an oxide layer 22, a gate 24, and a back metal electrode 26, while the substrate 20 is between the oxide layer 22 and the back metal electrode 26, and the oxide layer 22 is located at the gate. Between the pole 24 and the substrate 20. Here, the method of measuring the thickness of the oxide layer of the present invention is for measuring the thickness of the oxide layer 22 of the gold-oxygen half-capacitance element 2. In particular, when the thickness of the oxide layer 22 is less than 1.8 nm, the thickness of the oxide layer 22 cannot be accurately calculated unlike the conventional measurement method, and the actual thickness of the oxide layer 22 can be accurately measured by the present invention in combination with the result of the known thickness oxide layer. .
請參見步驟S10，若要測量具有未知厚度的金氧半電容元件2時，本發明首先可將多個彼此相異的閘極電壓分別輸入所述金氧半電容元件2之閘極24，並同時測量閘極24上的漏電流密度，以產生一個電壓電流對應關係。於實務上，閘極24上所施加的閘極電壓可預先選定在一個電壓範圍內，而本發明即以所述電壓範圍對閘極24進行掃描，例如+2V到-2.5V，當然本發明不以此為限，於所屬技術領域具有通常知識者當然可選擇0V至-2.5V、+1V至-2V或者其他適當的測量範圍。Referring to step S10, when measuring the gold-oxygen semi-capacitive element 2 having an unknown thickness, the present invention may first input a plurality of gate voltages different from each other into the gate 24 of the gold-oxygen half-capacitance element 2, respectively. At the same time, the leakage current density on the gate 24 is measured to generate a voltage-current correspondence. In practice, the gate voltage applied to the gate 24 can be preselected in a voltage range, and the present invention scans the gate 24 with the voltage range, for example, +2V to -2.5V, of course, the present invention. Without being limited thereto, those of ordinary skill in the art may of course select from 0V to -2.5V, +1V to -2V, or other suitable measurement range.
於實務上，本發明逐次測量不同的閘極電壓對於閘極24之漏電流密度的影響，而每個閘極電壓與其對應的漏電流密度可形成一取樣點。因此，藉由反覆記錄閘極電壓與對應的漏電流密度，可產生大量的取樣點，而將相鄰的取樣點連接起來即可構成一條曲線L_unknown，這個曲線L_unknown即表示了未知厚度的金氧半電容元件2之電壓電流對應關係。當然，本發明並不限制電壓電流對應關係必須以曲線方式呈現，所述電壓電流對應關係更可以透過表格、應用程式或者其他適當的方式呈現。In practice, the present invention successively measures the effect of different gate voltages on the leakage current density of the gate 24, and each gate voltage and its corresponding leakage current density can form a sampling point. Therefore, by repeatedly recording the gate voltage and the corresponding leakage current density, a large number of sampling points can be generated, and adjacent sampling points can be connected to form a curve L_unknown, and this curve L_unknown represents the gold oxide of unknown thickness. The voltage-current correspondence of the semi-capacitance element 2. Of course, the present invention does not limit the voltage-current correspondence to be presented in a curved manner. The voltage-current correspondence may be presented in a table, an application, or other suitable manner.
此外，在實際測量閘極電壓與對應的漏電流密度時，若閘極24上所施加的閘極電壓小於0且負偏壓漸漸增大，於所屬技術領域具有通常知識者應會發現曲線L_unknown並不是平滑的向上攀升，而是會先趨緩再逐漸升高。本發明即是藉由分析曲線L_unknown中趨緩部分的特性，以判斷氧化層22的實際厚度。特別的是，本發明提出可利用曲線L_unknown的斜率來分析曲線L_unknown中趨緩部分的特性。In addition, when the gate voltage and the corresponding leakage current density are actually measured, if the gate voltage applied to the gate 24 is less than 0 and the negative bias voltage gradually increases, those having ordinary knowledge in the art should find the curve L_unknown. It is not a smooth upward ascent, but will gradually slow down and then gradually increase. The present invention determines the actual thickness of the oxide layer 22 by analyzing the characteristics of the slowing portion of the curve L_unknown. In particular, the present invention proposes that the slope of the curve L_unknown can be utilized to analyze the characteristics of the slowing portion of the curve L_unknown.
於步驟S12中，本發明將每一個漏電流密度分別對對應之閘極電壓進行一微分運算，以產生微分後之電壓電流對應關係。於實務上，本發明係將每一個漏電流密度對閘極電壓進行一次微分，據以產生微分後之電壓電流對應關係。請參見圖4，圖4係繪示依據本發明一示範實施例之微分後的電壓電流對應關係之曲線圖。如圖4所示，曲線L_unknown2即是曲線L_unknown經過一次微分的結果，也就是說，從曲線L_unknown2可以看出L_unknown在各個閘極電壓時的斜率大小。在此，針對閘極電壓介於0至-2.0的區間來看，可以發現曲線L_unknown2在閘極電壓約-1.06V時微分後之漏電流密度(斜率)相對較小，也就是L_unknown在閘極電壓約-1.06V時會趨緩。當閘極電壓逐漸遠離-1.06V時(例如-1.3V或者-0.7V)，L_unknown2中的微分後之漏電流密度都相對較大，而L_unknown的變化幅度同樣也較大。In step S12, the present invention separately performs a differential operation on the corresponding gate voltage for each of the drain current densities to generate a voltage-current correspondence relationship after the differentiation. In practice, the present invention differentiates the gate voltage by each leakage current density, thereby generating a voltage-current correspondence after differentiation. Please refer to FIG. 4. FIG. 4 is a graph showing the correspondence between voltage and current after differentiation according to an exemplary embodiment of the present invention. As shown in FIG. 4, the curve L_unknown2 is the result of a differential of the curve L_unknown, that is, the slope of the L_unknown at each gate voltage can be seen from the curve L_unknown2. Here, for the gate voltage range of 0 to -2.0, it can be found that the leakage current density (slope) of the curve L_unknown2 after the gate voltage is about -1.06V is relatively small, that is, L_unknown is at the gate. The voltage will slow down when the voltage is about -1.06V. When the gate voltage is gradually away from -1.06V (for example, -1.3V or -0.7V), the leakage current density after differentiation in L_unknown2 is relatively large, and the variation range of L_unknown is also large.
於步驟S14中，本發明自所述多個閘極電壓中，選擇一個氧化層平能帶電壓，所述氧化層平能帶電壓係對應微分後之漏電流密度的最小值。若以圖4為例，L_unknown微分後之漏電流密度的最小值係出現在閘極電壓約-1.06V處，也就是說，本發明可選擇氧化層平能帶電壓為-1.06V。於實務上，當施加的閘極電壓約在-1.06V附近時，在固定的閘極電壓下漏電流的變化量會趨近於最小(單位電壓下允許通過的電流密度最小)，於所屬技術領域者應可明瞭此時的氧化層22阻擋漏電流的能力最佳，故方能得到最小的斜率值(微分後之漏電流密度的最小值)。In step S14, the present invention selects an oxide flat band voltage from the plurality of gate voltages, and the oxide layer flat band voltage corresponds to a minimum value of the differential current density after differentiation. If the case of FIG. 4 is taken as an example, the minimum value of the leakage current density after L_unknown differentiation occurs at a gate voltage of about -1.06V, that is, the voltage of the oxide layer of the present invention can be selected to be -1.06V. In practice, when the applied gate voltage is around -1.06V, the amount of change in leakage current at a fixed gate voltage will approach the minimum (the current density allowed to pass at the unit voltage is the smallest). It should be clear to those skilled in the art that the ability of the oxide layer 22 to block leakage current is optimal, so that a minimum slope value (minimum value of leakage current density after differentiation) can be obtained.
接著於步驟S16中，本發明依據氧化層平能帶電壓，自電壓電流對應關係中，選擇目標漏電流密度，所述目標漏電流密度係對應氧化層平能帶電壓。請參見圖5，圖5係繪示依據本發明一示範實施例之標記氧化層平能帶電壓之電壓電流對應關係之曲線圖。圖5與圖3的差異僅在於圖5在曲線L_unknown上標記了氧化層平能帶電壓Vox_fb 以及對應氧化層平能帶電壓Vox_fb 的目標漏電流密度Jox_fb 。換句話說，當本發明從圖4(步驟S14)找出氧化層平能帶電壓Vox_fb 後，將所述氧化層平能帶電壓Vox_fb 代回圖3中的電壓電流對應關係(曲線L_unknown)，以找出對應的目標漏電流密度Jox_fb 。Next, in step S16, the present invention selects a target leakage current density according to the oxide layer flat band voltage and the voltage-current correspondence, and the target leakage current density corresponds to the oxide layer flat band voltage. Referring to FIG. 5, FIG. 5 is a graph showing the relationship between voltage and current of a flat oxide band voltage of a mark oxide layer according to an exemplary embodiment of the present invention. 5 is different from FIG. 3 only in that the target leakage current density J ox_fb of the oxide flat band voltage V ox — fb and the corresponding oxide level band voltage V ox — fb are marked on the curve L_unknown in FIG. 5 . In other words, when the present invention finds the oxide flat band voltage V ox_fb from FIG. 4 (step S14), the oxide layer flat band voltage V ox_fb is returned to the voltage-current correspondence in FIG. 3 (curve L_unknown ) to find the corresponding target leakage current density J ox_fb .
請注意，在前述步驟S10中，由於不同的氧化層材料或是不同的矽基板摻雜等等都有可能導致氧化層平能帶電壓出現位置的不同，因此需要選擇一個適當的電壓範圍對閘極24進行掃描，以避免無法透過步驟S10至S16檢測出氧化層平能帶電壓Vox_fb 。Please note that in the foregoing step S10, since different oxide layer materials or different germanium substrate doping and the like may cause different positions of the oxide layer flat band voltage, it is necessary to select an appropriate voltage range for the gate. The pole 24 is scanned to avoid the inability to detect the oxide level band voltage V ox_fb through steps S10 to S16.
最後於步驟S18中，本發明將目標漏電流密度Jox_fb 代入一預設查找表，以計算出氧化層22的厚度。於實務上，所述預設查找表更記錄了複數個已知氧化層厚度之氧化層平能帶電壓以及漏電流密度，本發明可將目標漏電流密度Jox_fb 透過比對這些已知氧化層厚度的漏電流密度，藉此估計出氧化層22的厚度。Finally, in step S18, the present invention substitutes the target leakage current density J ox_fb into a predetermined look-up table to calculate the thickness of the oxide layer 22. In practice, the preset lookup table further records a plurality of oxide layer flat band voltages and leakage current densities of known oxide thicknesses, and the present invention can align the target leakage current density J ox_fb through the known oxide layers. The leakage current density of the thickness, thereby estimating the thickness of the oxide layer 22.
請一併參見圖3至圖5，本發明的預設查找表可預先將多個不同厚度的氧化層進行步驟S10至步驟S16的流程。舉例來說，當氧化層厚度是2.3nm時，本發明將多個彼此相異的閘極電壓分別輸入所述已知氧化層厚度的金氧半電容元件之閘極，並同時測量所述閘極上的漏電流密度，以產生一個對應氧化層厚度為2.3nm的電壓電流對應關係L11。接著，本發明可將電壓電流對應關係L11中，每一個漏電流密度分別對對應之閘極電壓進行一次微分，以產生微分後之電壓電流對應關係L21。從微分後之電壓電流對應關係L21中選擇對應氧化層厚度為2.3nm的氧化層平能帶電壓V1之後，代回電壓電流對應關係L11以找出對應氧化層平能帶電壓V1的漏電流密度J1。Referring to FIG. 3 to FIG. 5 together, the preset lookup table of the present invention may perform a process of step S10 to step S16 by using a plurality of oxide layers of different thicknesses in advance. For example, when the thickness of the oxide layer is 2.3 nm, the present invention inputs a plurality of gate voltages different from each other into the gate of the gold oxide half capacitance element of the known oxide layer thickness, and simultaneously measures the gate. The leakage current density on the pole is such that a voltage-current correspondence L11 corresponding to a thickness of the oxide layer of 2.3 nm is generated. Next, in the present invention, each of the leakage current densities may be differentiated from the corresponding gate voltages in the voltage-current correspondence relationship L11 to generate a differentiated voltage-current correspondence relationship L21. After selecting the oxide layer flat band voltage V1 corresponding to the oxide layer thickness of 2.3 nm from the voltage-current correspondence relationship L21 after the differentiation, the voltage-current corresponding to the relationship L11 is obtained to find the leakage current density corresponding to the flat band voltage V1 of the oxide layer. J1.
進一步來說，所述預設查找表更可預先將已知氧化層厚度之漏電流密度(J1~J6)取自然對數，所屬技術領域者應該知道漏電流密度取自然對數值剛好會正比於氧化層厚度，因此進而進行一線性迴歸運算即可產生一參考線。請參見圖6，圖6係繪示依據本發明一示範實施例之參考線之示意圖。如圖所示，本發明可由預設查找表中的每個取自然對數後之漏電流密度(lnJ1~lnJ6)，推導出參考線ref，藉此，於參考線ref上，每一個已知厚度可以直接對應至一個取自然對數後之一估計漏電流密度。Further, the preset lookup table can further take the natural current logarithm of the leakage current density (J1~J6) of the known oxide layer thickness, and those skilled in the art should know that the leakage current density takes a natural logarithm value just proportional to oxidation. The layer thickness, and thus a linear regression operation, produces a reference line. Please refer to FIG. 6. FIG. 6 is a schematic diagram of a reference line according to an exemplary embodiment of the present invention. As shown in the figure, the present invention can derive the reference line ref from the leakage current density (lnJ1~lnJ6) after taking the natural logarithm of each of the preset lookup tables, whereby each known thickness is on the reference line ref. The leakage current density can be estimated directly corresponding to one of the natural logarithms.
舉例來說，若金氧半電容元件2具有厚度d的氧化層22，而經步驟S10至步驟S16求得厚度d的氧化層22具有目標漏電流密度Jox_fb ，則本發明於步驟S18中將目標漏電流密度Jox_fb 對應縱座標代入參考線ref之後，可從參考線ref找出目標漏電流密度Jox_fb 對應的橫座標。藉此，目標漏電流密度Jox_fb 對應的橫座標即為金氧半電容元件的氧化層22之實際厚度。換句話說，不論金氧半電容元件2的氧化層22之厚度多薄，只要將目標漏電流密度Jox_fb 代入本發明推算出的參考線，都可以迅速且精確地對應到一個橫座標。For example, if the gold-oxygen half-capacitance element 2 has the oxide layer 22 of the thickness d, and the oxide layer 22 having the thickness d obtained by the steps S10 to S16 has the target leakage current density J ox_fb , the present invention will after the target leak current density J ox_fb ordinate corresponding to the reference line substituting ref, ref can identify the target from the reference line leak current density J ox_fb corresponding abscissa. Thereby, the abscissa corresponding to the target leakage current density J ox_fb is the actual thickness of the oxide layer 22 of the gold-oxygen half-capacitance element. In other words, regardless of the thickness of the oxide layer 22 of the gold-oxygen half-capacitance element 2, the target leakage current density J ox_fb can be quickly and accurately corresponded to an abscissa as long as it is substituted into the estimated reference line of the present invention.
從實際操作的角度來看，本發明實施例所提供的測量氧化層厚度的方法中，當測量儀器測量出來電壓電流對應關係之後，測量儀器可直接將電壓電流對應關係傳輸至電腦或其他適當的計算機中。進而由電腦或其他適當的計算機執行前述的步驟S10至步驟S18，使得本發明可以快速且準確地取得金氧半電容元件的氧化層22之實際厚度。From the point of view of actual operation, in the method for measuring the thickness of the oxide layer provided by the embodiment of the present invention, after the corresponding relationship between the voltage and current measured by the measuring instrument, the measuring instrument can directly transmit the voltage-current correspondence to the computer or other appropriate In the computer. Further, the aforementioned steps S10 to S18 are performed by a computer or other appropriate computer, so that the present invention can quickly and accurately obtain the actual thickness of the oxide layer 22 of the gold-oxygen half-capacitance element.
綜上所述，本發明實施例所提供的測量氧化層厚度的方法，可利用傳統的測量儀器測量電壓電流對應關係，不需額外增加設備成本。此外，本發明透過測量出的電壓電流對應關係，可分析出未知厚度的氧化層之氧化層平能帶電壓，並可藉由所述氧化層平能帶電壓推算出金氧半電容元件之氧化層的各種厚度。因此，本發明有別於傳統的測量方式，對超薄的氧化層來說，本發明之測量氧化層厚度的方法可以以最小成本而準確地測量氧化層厚度，十分符合業界的需要。In summary, the method for measuring the thickness of the oxide layer provided by the embodiment of the present invention can measure the voltage-current corresponding relationship by using a conventional measuring instrument without additional equipment cost. In addition, the present invention can analyze the oxide layer flat band voltage of the oxide layer of unknown thickness through the measured voltage-current correspondence relationship, and can decompose the oxidation of the gold-oxygen semi-capacitor element by the flat band voltage of the oxide layer. Various thicknesses of the layers. Therefore, the present invention is different from the conventional measurement method. For the ultra-thin oxide layer, the method for measuring the thickness of the oxide layer of the present invention can accurately measure the thickness of the oxide layer with minimum cost, which is in line with the needs of the industry.
以上所述僅為本發明之較佳可行實施例，非因此侷限本發明之專利範圍，故舉凡運用本發明說明書及圖式內容所為之等效技術變化，均包含於本發明之範圍內。The above are only the preferred embodiments of the present invention, and are not intended to limit the scope of the invention, and the equivalents of the invention are included in the scope of the invention.
S10~S18．．．步驟流程S10~S18. . . Step flow
2．．．金氧半電容元件2. . . Gold oxide semi-capacitive component
20．．．基板20. . . Substrate
22．．．氧化層twenty two. . . Oxide layer
24．．．閘極twenty four. . . Gate
26．．．背面金屬電極26. . . Back metal electrode
L11~L16、L_unknown．．．電壓電流對應關係L11~L16, L_unknown. . . Voltage-current correspondence
L21~L26、L_unknown2．．．微分後之電壓電流對應關係L21~L26, L_unknown2. . . Voltage-current correspondence after differentiation
V1、Vox_fb ．．．電壓V1, V ox_fb . . . Voltage
J1、Jox_fb ．．．電流密度J1, J ox_fb . . . Current density
ref．．．參考線Ref. . . reference line
d．．．氧化層的厚度d. . . Oxide thickness
圖1係繪示依據本發明一示範實施例之測量氧化層厚度的方法之流程圖。1 is a flow chart showing a method of measuring the thickness of an oxide layer in accordance with an exemplary embodiment of the present invention.
圖2係繪示依據本發明一示範實施例之金氧半電容元件之剖面圖。2 is a cross-sectional view of a gold-oxygen half-capacitance element in accordance with an exemplary embodiment of the present invention.
圖3係繪示依據本發明一示範實施例之電壓電流對應關係之曲線圖。FIG. 3 is a graph showing voltage-current correspondence according to an exemplary embodiment of the present invention.
圖4係繪示依據本發明一示範實施例之微分後的電壓電流對應關係之曲線圖。FIG. 4 is a graph showing the correspondence between voltage and current after differentiation according to an exemplary embodiment of the present invention.
圖5係繪示依據本發明一示範實施例之標記氧化層平能帶電壓之電壓電流對應關係之曲線圖。FIG. 5 is a graph showing voltage-current correspondence of a flat oxide band voltage of a mark oxide layer according to an exemplary embodiment of the present invention.
圖6係繪示依據本發明一示範實施例之參考線之示意圖。6 is a schematic diagram of a reference line in accordance with an exemplary embodiment of the present invention.
S10~S18．．．步驟流程S10~S18. . . Step flow
Claims (8)
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH08170910A (en) * | 1994-10-18 | 1996-07-02 | Hitachi Ltd | Method and apparatus for measuring thickness |
| DE19605825C2 (en) * | 1995-04-07 | 2000-01-27 | Mitsubishi Electric Corp | Method for optimizing the manufacturing process of a semiconductor device, in which process parameters are determined by numerical calculation |
| JP2001291778A (en) * | 2000-04-04 | 2001-10-19 | Hitachi Ltd | Method and device for extracting statistical model parameter |
| CN102042799A (en) * | 2009-10-20 | 2011-05-04 | 北京大学 | Method for extracting gate-oxide thickness and substrate doping concentration of field effect transistor |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08170910A (en) * | 1994-10-18 | 1996-07-02 | Hitachi Ltd | Method and apparatus for measuring thickness |
| DE19605825C2 (en) * | 1995-04-07 | 2000-01-27 | Mitsubishi Electric Corp | Method for optimizing the manufacturing process of a semiconductor device, in which process parameters are determined by numerical calculation |
| JP2001291778A (en) * | 2000-04-04 | 2001-10-19 | Hitachi Ltd | Method and device for extracting statistical model parameter |
| CN102042799A (en) * | 2009-10-20 | 2011-05-04 | 北京大学 | Method for extracting gate-oxide thickness and substrate doping concentration of field effect transistor |
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