TWI425629B - Solid state image pickup device, method of manufacturing the same, image pickup device, and electronic device - Google Patents

Solid state image pickup device, method of manufacturing the same, image pickup device, and electronic device Download PDF

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TWI425629B
TWI425629B TW099107439A TW99107439A TWI425629B TW I425629 B TWI425629 B TW I425629B TW 099107439 A TW099107439 A TW 099107439A TW 99107439 A TW99107439 A TW 99107439A TW I425629 B TWI425629 B TW I425629B
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waveguide
light
image pickup
pixel
pickup device
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TW201106482A (en
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Masashi Nakata
Shinichiro Izawa
Kazuyoshi Yamashita
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Sony Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements

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  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Description

固態影像拾取裝置及其製造方法，影像拾取裝置及電子裝置Solid-state image pickup device and manufacturing method thereof, image pickup device and electronic device

本發明係關於一種固態影像拾取裝置、製造該固態影像拾取裝置的方法、影像拾取裝置、及包含該固態影像拾取裝置的電子裝置，例如相機。The present invention relates to a solid-state image pickup device, a method of manufacturing the solid-state image pickup device, an image pickup device, and an electronic device including the solid-state image pickup device, such as a camera.

固態影像拾取裝置包含放大固態影像拾取裝置，其係由例如金屬氧化物半導體(MOS)影像感測器為代表，例如互補式金屬氧化物半導體(CMOS)。且固態影像拾取裝置包含電荷轉換固態影像拾取裝置，其係由電荷耦接裝置(CCD)影像感測器代表。該等固態影像拾取裝置的類型已經廣泛用於數位靜態相機及數位錄影機。因為MOS固態影像拾取裝置的供應電壓及功率消耗很低，因此固態影像拾取裝置經常被用於移動式裝置中，例如設有相機的行動電話及個人數位助理(PDA)。The solid-state image pickup device includes an amplifying solid-state image pickup device, which is represented by, for example, a metal oxide semiconductor (MOS) image sensor, such as a complementary metal oxide semiconductor (CMOS). The solid-state image pickup device includes a charge-switching solid-state image pickup device, which is represented by a charge coupled device (CCD) image sensor. The types of such solid-state image pickup devices have been widely used in digital still cameras and digital video recorders. Since the supply voltage and power consumption of the MOS solid-state image pickup device are low, the solid-state image pickup device is often used in a mobile device such as a mobile phone provided with a camera and a personal digital assistant (PDA).

典型的MOS固態影像拾取裝置包含多數個排成陣列的單位像素，各個單位像素具有一群作為光電轉換器的光二極體，及多數個像素電晶體。近年來，像素尺寸的微型化不斷進步。為了要減少每個單位像素的像素電晶體的數目並增加光二極體的面積，發展MOS固態影像拾取裝置，其中單位像素被排列成陣列，各個單位像素群集具有被多數個像素共用的一個像素電晶體(參見日本未審查專利申請案公開號第2006-54276號及第2009-135319號)。A typical MOS solid-state image pickup device includes a plurality of unit pixels arranged in an array, each unit pixel having a group of photodiodes as photoelectric converters, and a plurality of pixel transistors. In recent years, the miniaturization of pixel sizes has continued to advance. In order to reduce the number of pixel transistors per unit pixel and increase the area of the photodiode, a MOS solid-state image pickup device is developed in which unit pixels are arranged in an array, and each unit pixel cluster has one pixel shared by a plurality of pixels. Crystals (see Japanese Unexamined Patent Application Publication No. Publication No. No. 2006-54276 and No. 2009-135319).

又，提出一種固態影像拾取裝置，其中波導引導入射光至對應的光二極體以提高靈敏度特性(參見日本未審查專利申請案公開號第2008-166677號)。更進一步，提出一種固態影像拾取裝置，其中對晶片上透鏡實施瞳孔校正，以校正遮光(日本專利案第2600250號)。Further, a solid-state image pickup device is proposed in which a waveguide guides incident light to a corresponding photodiode to improve sensitivity characteristics (see Japanese Unexamined Patent Application Publication No. Publication No. 2008-166677). Further, a solid-state image pickup device is proposed in which a pupil correction is performed on a lens on a wafer to correct shading (Japanese Patent No. 2600250).

固態影像拾取裝置包含波導及晶片上透鏡，波導設置於光電轉換入射光的光二極體之上，晶片上透鏡引導入射光至波導。此外，在晶片上透鏡及波導之間形成彩色濾波層。彩色濾波層將入射光分成例如包含紅(R)光、綠(G)光及藍(B)光的彩色光。為了要減少色差效應，調整用於RGB色彩的晶片透鏡的曲率半徑。更進一步，將晶片上透鏡及彩色濾波器的高影像高度位置處的瞳孔校正量決定為小於透鏡主要光線角度(CRA)，以減少色差效應。The solid-state image pickup device comprises a waveguide and an on-wafer lens, and the waveguide is disposed on the photodiode of the photoelectrically converted incident light, and the lens on the wafer guides the incident light to the waveguide. In addition, a color filter layer is formed between the lens on the wafer and the waveguide. The color filter layer divides incident light into, for example, colored light including red (R) light, green (G) light, and blue (B) light. In order to reduce the chromatic aberration effect, the radius of curvature of the wafer lens for RGB color is adjusted. Further, the pupil correction amount at the high image height position of the lens on the wafer and the color filter is determined to be smaller than the lens main ray angle (CRA) to reduce the chromatic aberration effect.

例如，當使用具有高主要光線角度(例如25°)的晶片上透鏡時，高影像高度位置處的色差會造成遮光(影像焦點位置(深度)之間的差異)，而會產生色彩混合。For example, when a wafer-on-wafer lens having a high main ray angle (for example, 25°) is used, chromatic aberration at a high image height position causes shading (a difference between image focus positions (depth)), and color mixing occurs.

當使用根據色彩而調整晶片上透鏡的曲率半徑的方法時，類似先前技術，則會增加製造晶片上透鏡的步驟數目。隨著像素進一步微小化，則晶片上透鏡的曲率半徑會增加。如此則難以根據色彩而調整曲率半徑。When a method of adjusting the radius of curvature of a lens on a wafer according to color is used, similar to the prior art, the number of steps of manufacturing a lens on a wafer is increased. As the pixel is further miniaturized, the radius of curvature of the lens on the wafer increases. This makes it difficult to adjust the radius of curvature according to the color.

在高入射角部位中，影像形成的中心(包含F光)從光二極體的中心轉向至光學中心(例如朝向像素部位的中心)。因此，產生遮光及色彩混合。在先前技術中，若不根據色彩而調整晶片上透鏡的曲率半徑，則在波導的入射光的一端的入射光的照明直徑會因為色差而隨著色彩改變。隨著像素更為縮小，更難以實施校正而獲得對於全部色彩而言的平衡位置。若對於晶片上透鏡及彩色濾波層的瞳孔校正量隨著色彩而改變，則會產生空隙或是重疊部份。因此，會產生遮光及色彩混合。因此，對晶片上透鏡及彩色濾波層實施瞳孔校正以有效地集中均勻的傾斜光。不幸地，此種結構會造成亮度遮光，其中靈敏度於角度範圍的周邊減少，且會因為個別色彩的遮光的形狀差異而產生彩色遮光。In the high incident angle portion, the center of image formation (including F light) is diverted from the center of the photodiode to the optical center (for example, toward the center of the pixel portion). Therefore, shading and color mixing are produced. In the prior art, if the radius of curvature of the lens on the wafer is not adjusted according to the color, the illumination diameter of the incident light at one end of the incident light of the waveguide may change with the color due to the chromatic aberration. As the pixels shrink more, it is more difficult to implement corrections to obtain balanced positions for all colors. If the amount of pupil correction for the lens and color filter layer on the wafer changes with color, a gap or overlap will occur. Therefore, shading and color mixing are produced. Therefore, pupil correction is performed on the on-wafer lens and the color filter layer to effectively concentrate uniform oblique light. Unfortunately, such a structure causes brightness shading, in which the sensitivity is reduced at the periphery of the angular range, and color shading occurs due to the difference in shape of the shading of the individual colors.

揭示一種即使當入射光的入射角很大時，仍能用以使波導引導入射光至光電轉換器的技術。利用此技術，角範圍分成四個四分之一扇形，且根據在四個四分之一扇形中的位置而改變波導的漸細位置，以使波導能引導不同入射角度的入射光(例如，參見日本未審查專利申請案公開號第2005-175234號)。A technique for guiding a waveguide to incident light to a photoelectric converter even when the incident angle of incident light is large is disclosed. With this technique, the angular extent is divided into four quarter-sectors, and the tapered position of the waveguide is varied according to the position in the four quarter-sectors so that the waveguide can direct incident light at different angles of incidence (eg, See Japanese Unexamined Patent Application Publication No. 2005-175234.

然而，即使波導的一部份漸細，發明人發現垂直進入波導的光會被漸細波導的傾斜表面反射，因此減少靈敏度。因此，因為漸細的形狀會造成靈敏度的減少，所以波導的一部份不應為漸細。此外，為了要形成具有漸細部份的波導，比起形成一般波導而言，處理的數目及遮罩的數目皆增加。更進一步，因為此種技術僅將角範圍分成四個四分之一扇形並改變波導的形狀，則此技術無法減少遮光特性。However, even if a portion of the waveguide is tapered, the inventors have found that light entering the waveguide vertically is reflected by the inclined surface of the tapered waveguide, thus reducing sensitivity. Therefore, since the tapered shape causes a decrease in sensitivity, a part of the waveguide should not be tapered. Further, in order to form a waveguide having a tapered portion, the number of processes and the number of masks are increased as compared with the formation of a general waveguide. Further, since this technique divides only the angular range into four quarter-sectors and changes the shape of the waveguide, this technique cannot reduce the shading characteristics.

圖1顯示根據先前技術之二像素共用類型的MOS固態影像拾取裝置1的範例，其中兩個像素共用一個浮動擴散、一個放大器電晶體、及一個選擇電晶體。固態影像拾取裝置1包含二像素共用類型的一個單位像素群集2，其中兩個像素共用一個浮動擴散、一個放大器電晶體、及一個選擇電晶體。單位像素群集2包含兩個光二極體PD1及PD2，兩個轉換電晶體Tr11及Tr12，一個浮動擴散FD，一個重設電晶體Tr2，及一個放大器電晶體Tr3。在此範例中，使用具有Bayer圖案的彩色濾波器。排列二像素共用類型的單位像素群集2，使第一綠色像素Gb相鄰於藍色像素B，且第二綠色像素Gr相鄰於紅色像素R。在圖1中，反覆排列包含紅色像素R及第一綠色像素Gb的二像素共用類型的單位像素群集2，及包含藍色像素B及第二綠色像素Gr的二像素共用類型的單位像素群集2。1 shows an example of a MOS solid-state image pickup device 1 of a two-pixel sharing type according to the prior art, in which two pixels share a floating diffusion, an amplifier transistor, and a selection transistor. The solid-state image pickup device 1 includes a unit pixel cluster 2 of a two-pixel sharing type in which two pixels share a floating diffusion, an amplifier transistor, and a selection transistor. The unit pixel cluster 2 includes two photodiodes PD1 and PD2, two conversion transistors Tr11 and Tr12, one floating diffusion FD, one reset transistor Tr2, and one amplifier transistor Tr3. In this example, a color filter with a Bayer pattern is used. The unit pixel cluster 2 of the two-pixel sharing type is arranged such that the first green pixel Gb is adjacent to the blue pixel B, and the second green pixel Gr is adjacent to the red pixel R. In FIG. 1, a unit pixel cluster 2 of a two-pixel sharing type including a red pixel R and a first green pixel Gb, and a unit pixel cluster 2 of a two-pixel sharing type including a blue pixel B and a second green pixel Gr are repeatedly arranged. .

轉換電晶體Tr11及Tr12分別包含聚合矽製成的轉換閘極3、個別的光二極體PD(PD1、PD2)、及浮動擴散FD。重設電晶體Tr2包含聚合矽製成的重設閘極4、浮動擴散FD及源極區域5。放大器電晶體Tr3包含聚合矽製成的放大器閘極6、源極區域7及汲極區域8。浮動擴散FD及放大器閘極6為藉由接線部位9相互連接。放大器電晶體Tr3之源極區域7連接於垂直信號線(未顯示)。The conversion transistors Tr11 and Tr12 respectively include a conversion gate 3 made of a polymer germanium, individual photodiodes PD (PD1, PD2), and a floating diffusion FD. The reset transistor Tr2 includes a reset gate 4 made of a polymer germanium, a floating diffusion FD, and a source region 5. The amplifier transistor Tr3 includes an amplifier gate 6, a source region 7, and a drain region 8 made of a polymer. The floating diffusion FD and the amplifier gate 6 are connected to each other by a wiring portion 9. The source region 7 of the amplifier transistor Tr3 is connected to a vertical signal line (not shown).

在固態影像拾取裝置1中，第一綠色像素Gb的轉換閘極3的佈局對稱於第二綠色像素Gr的轉換閘極3的佈局。該等佈局造成第一及第二綠色像素Gb及Gr之間的靈敏度差異。舉例而言，轉換閘極3造成的基層佈局之間的差異會造成入射光照射於綠色像素Gb及Gr的量的差異，因為傾斜入射的光線的一部份會被綠色像素其中一者的轉換閘極遮蔽。在MOS固態影像拾取裝置中，兩個像素之間的靈敏度差異會隨著像素微型化的發展而益趨明顯。靈敏度的差異對於微型化而言是個瓶頸。In the solid-state image pickup device 1, the layout of the switching gate 3 of the first green pixel Gb is symmetrical to the layout of the switching gate 3 of the second green pixel Gr. These layouts cause a difference in sensitivity between the first and second green pixels Gb and Gr. For example, the difference between the base layer layout caused by the switching gate 3 causes a difference in the amount of incident light that illuminates the green pixels Gb and Gr, because a portion of the obliquely incident light is converted by one of the green pixels. The gate is shielded. In the MOS solid-state image pickup device, the sensitivity difference between the two pixels becomes more and more obvious as the pixel miniaturization progresses. The difference in sensitivity is a bottleneck for miniaturization.

又，參照圖2，其顯示一種固態影像拾取裝置10，其中二像素共用類型的單位像素群集2(其中兩個像素共用一個浮動擴散、一個放大器電晶體、及一個選擇電晶體)以交錯方式排列。因為二像素共用類型的單位像素群集2在固態影像拾取裝置10中以交錯方式排列，所以第一及第二綠色像素Gb及Gr的轉換閘極的佈局係相互對稱。因此，綠色像素Gb及Gr之間的靈敏度差異減少。2, there is shown a solid-state image pickup device 10 in which a unit pixel cluster 2 of two pixel sharing type (where two pixels share a floating diffusion, an amplifier transistor, and a selection transistor) are arranged in an interlaced manner. . Since the unit pixel clusters 2 of the two-pixel sharing type are arranged in a staggered manner in the solid-state image pickup device 10, the layouts of the switching gates of the first and second green pixels Gb and Gr are symmetrical with each other. Therefore, the sensitivity difference between the green pixels Gb and Gr is reduced.

第一及第二綠色像素Gb及Gr之間的靈敏度差異可能會造成雜訊，例如格柵雜訊的發生，亦有可能造成彩色遮光的發生。所欲者為消除靈敏度之間的差異。The difference in sensitivity between the first and second green pixels Gb and Gr may cause noise, such as the occurrence of grid noise, and may also cause color shading. The desire is to eliminate the difference between the sensitivity.

同時，在圖2所示的固態影像拾取裝置10中，限制像素電晶體的佈局及浮動擴散FD的佈局，以保持第一及第二綠色像素Gb及Gr的轉換閘極的對稱佈局。此種限制為微型化的瓶頸。例如，單位像素群集2僅達成二像素共用，因此像素電晶體及浮動擴散的數目為四像素共用的佈局中的像素電晶體及浮動擴散的數目的兩倍。因此，用於光電轉換的光二極體PD的面積減少。光二極體PD的面積減少會產生靈敏度的損失。此外，在固態影像拾取裝置10中，綠色像素Gb及Gr的轉換閘極3的佈局不對稱於紅色像素R及藍色像素B的轉換閘極3的佈局。因此，難以預防彩色遮光的發生。Meanwhile, in the solid-state image pickup device 10 shown in FIG. 2, the layout of the pixel transistors and the layout of the floating diffusion FD are restricted to maintain the symmetrical layout of the switching gates of the first and second green pixels Gb and Gr. This limitation is the bottleneck of miniaturization. For example, the unit pixel cluster 2 only achieves two pixel sharing, so the number of pixel transistors and floating diffusion is twice the number of pixel transistors and floating diffusion in a four pixel shared layout. Therefore, the area of the photodiode PD for photoelectric conversion is reduced. A reduction in the area of the photodiode PD results in a loss of sensitivity. Further, in the solid-state image pickup device 10, the layout of the switching gates 3 of the green pixels Gb and Gr is asymmetrical to the layout of the switching gates 3 of the red pixel R and the blue pixel B. Therefore, it is difficult to prevent the occurrence of color shading.

如上述，因為相對於預定的相鄰像素之間的邊界具有不對稱配置的基層，而會造成像素之間產生的光學不對稱。As described above, since there is an asymmetrically disposed base layer with respect to a boundary between predetermined adjacent pixels, optical asymmetry occurring between pixels is caused.

按照該情況，所欲提供者為一種固態影像拾取裝置及一種包含該固態影像拾取裝置的電子裝置，例如相機，能改善基層的不對稱所造成的像素之間的光學不對稱的該裝置包含電極及接線部位。According to the situation, the device is a solid-state image pickup device and an electronic device including the solid-state image pickup device, such as a camera, which can improve the optical asymmetry between pixels caused by the asymmetry of the base layer. And wiring parts.

根據本發明之一實施例的固態影像拾取裝置包含其中像素排成陣列的像素部位；以多數個像素群集在該群集的光入射表面之下形成的基層，且該基層具有包含電極及接線的佈局，該佈局相對於預定相鄰像素之間的邊界為不對稱；及調整機構，用以使基層所造成的像素之間的光學不對稱成為光學對稱。A solid-state image pickup device according to an embodiment of the present invention includes a pixel portion in which pixels are arranged in an array; a base layer formed under a light incident surface of the cluster with a plurality of pixels clustered, and the base layer has a layout including electrodes and wiring The layout is asymmetrical with respect to a boundary between predetermined adjacent pixels; and an adjustment mechanism for making the optical asymmetry between the pixels caused by the base layer optically symmetrical.

作為固態影像拾取裝置的較佳實施例，像素部位可包含多數個單位像素群集，各個單位像素群集具有共用單一個預定電晶體的多數個像素。基層可為包含像素電晶體之閘極及接線部位的基層。As a preferred embodiment of the solid-state image pickup device, the pixel portion may include a plurality of unit pixel clusters, each unit pixel cluster having a plurality of pixels sharing a single predetermined transistor. The base layer may be a base layer including a gate and a wiring portion of the pixel transistor.

利用該實施例中的固態影像拾取裝置，基層對於入射光的效應根據調整機構的位置位移的調整方向及調整量而減少。個別像素的光電轉換器的入射光的入射效能可被等效。With the solid-state image pickup device of this embodiment, the effect of the base layer on the incident light is reduced in accordance with the adjustment direction and the adjustment amount of the positional displacement of the adjustment mechanism. The incident efficiency of the incident light of the photoelectric converter of the individual pixels can be equivalent.

利用較佳實施例的固態影像拾取裝置，像素部位可包含多數個像素共用類型的單位像素群集。因此，至少一個共同彩色像素(相同的彩色信號從該彩色像素輸出)的光電轉換器上的入射光的入射效能可在像素單位群集中被等效，或者在多數個相鄰的單位像素群集中被等效。With the solid-state image pickup device of the preferred embodiment, the pixel portion can include a cluster of unit pixels of a plurality of pixel sharing types. Thus, the incident efficacy of incident light on a photoelectric converter of at least one common color pixel (the same color signal is output from the color pixel) can be equivalent in a pixel unit cluster, or in a plurality of adjacent unit pixel clusters Is equivalent.

根據本發明之一實施例的電子裝置包含固態影像拾取裝置，引導入射光至固態影像拾取裝置之光電轉換器的光學系統，及信號處理電路，其用以處理自固態影像拾取裝置輸出的信號。固態影像拾取裝置為上述的固態影像拾取裝置之中任一者。An electronic device according to an embodiment of the present invention includes a solid-state image pickup device, an optical system that directs incident light to a photoelectric converter of the solid-state image pickup device, and a signal processing circuit for processing a signal output from the solid-state image pickup device. The solid-state image pickup device is any of the above-described solid-state image pickup devices.

利用此實施例中之電子裝置，因為使用固態影像拾取裝置，所以基層對於入射光的效能會減少或是消除。個別像素的光電轉換器的入射光的入射效能可被等效。With the electronic device in this embodiment, since the solid-state image pickup device is used, the performance of the base layer for incident light is reduced or eliminated. The incident efficiency of the incident light of the photoelectric converter of the individual pixels can be equivalent.

先前技術的缺點為隨著進一步的像素微型化，因為在波導的光入射側的一端的入射光的照光直徑會隨著色彩的色差而改變，而難以實施校正以到達對全部色彩而言的平衡位置。又，若晶片上透鏡及彩色濾波層的瞳孔校正量會隨著色彩而改變，則會產生空隙或是重疊部份。因此，會產生遮光及色彩混合。A disadvantage of the prior art is that as further pixels are miniaturized, since the illumination diameter of the incident light at one end of the light incident side of the waveguide changes with the chromatic aberration of the color, it is difficult to perform correction to reach the balance for all colors. position. Moreover, if the amount of pupil correction of the lens and the color filter layer on the wafer changes with color, voids or overlapping portions may occur. Therefore, shading and color mixing are produced.

該裝置並非取決於透過彩色濾波層傳送的入射光的色彩而對於晶片上透鏡及彩色濾波層實施瞳孔校正，而是基於入射光的參考色彩實施瞳孔校正。因此，即使當入射光的照光直徑會隨著色彩的色差而改變，但入射光可有效地照射在波導的光入射側的一端上。The device does not perform pupil correction on the on-wafer lens and color filter layer depending on the color of the incident light transmitted through the color filter layer, but performs pupil correction based on the reference color of the incident light. Therefore, even when the illumination diameter of the incident light changes with the chromatic aberration of the color, the incident light can be efficiently irradiated on one end of the light incident side of the waveguide.

根據本發明之一實施例的固態影像拾取裝置包含像素部位，其係由單位像素以半導體基板的行及列方向排成陣列而形成。各個單位像素包含光電轉換器、波導及微透鏡，光電轉換器係形成於半導體基板上且將入射光轉換為信號電荷，波導形成於光電轉換器之上且將入射光引導至光電轉換器，微透鏡形成於波導之上且將入射光引導至波導的光入射側的一端。波導具有圓柱形本體，且其之剖面從光入射側至光出口側保持恆定，且係排列成使波導的光入射側的一端的微透鏡所入射的入射光的光線中心對準波導的中心軸。A solid-state image pickup device according to an embodiment of the present invention includes a pixel portion which is formed by arranging unit pixels in a row and column direction of a semiconductor substrate. Each unit pixel includes a photoelectric converter, a waveguide, and a microlens. The photoelectric converter is formed on the semiconductor substrate and converts the incident light into a signal charge. The waveguide is formed on the photoelectric converter and guides the incident light to the photoelectric converter. A lens is formed over the waveguide and directs the incident light to one end of the light incident side of the waveguide. The waveguide has a cylindrical body, and its cross section is kept constant from the light incident side to the light exit side, and is arranged such that the center of the incident light of the incident light of the microlens at one end of the light incident side of the waveguide is aligned with the central axis of the waveguide. .

利用此實施例之固態影像拾取裝置，波導的圓柱形本體具有從光入射側的一端到光出口側的一端的恆定的剖面。垂直入射至波導之光入射側的一端的光線不會被波導的側壁反射，但會透過波導16而傳送。因此，限制了靈敏度的減少。又，入射至波導的光入射側的一端的光線的中心對準波導的中心軸。因此，對波導可實施瞳孔校正。因此，從微透鏡入射的入射光可有效地引導至波導。With the solid-state image pickup device of this embodiment, the cylindrical body of the waveguide has a constant cross section from one end of the light incident side to one end of the light exit side. The light incident perpendicularly to one end of the light incident side of the waveguide is not reflected by the sidewall of the waveguide but is transmitted through the waveguide 16. Therefore, the reduction in sensitivity is limited. Further, the center of the light incident on one end of the light incident side of the waveguide is aligned with the central axis of the waveguide. Therefore, pupil correction can be performed on the waveguide. Therefore, incident light incident from the microlens can be efficiently guided to the waveguide.

根據本發明之一實施例的固態影像拾取裝置的製造方法包含以下步驟：在接線層中形成波導孔，波導孔將入射光引導至光電轉換器上，光電轉換器將入射光轉換為信號電荷，光電轉換器形成於半導體基板中，接線層形成於半導體基板中且包含具有多數層接線部位的層間絕緣膜；以波導材料膜填充波導孔，波導材料膜的折射率高於層間絕緣膜的折射率，並形成波導於波導孔中；在波導材料膜上形成彩色濾波層，且有一平坦絕緣膜夾設於其之間；及於彩色濾波層上形成微透鏡，微透鏡引導入射光至光電轉換器上。多數個各具有光電轉換器的單位像素以半導體基板的行及列方向排列成陣列以形成像素部位。對應於光電轉換器所形成的波導具有圓柱形本體，其之橫剖面從光入射側的一端至光出口側的一端保持恆定，且係配置成使波導之光入射側之一端入射的入射光的光線中心對準波導之中央軸。A method of manufacturing a solid-state image pickup device according to an embodiment of the present invention includes the steps of: forming a waveguide hole in a wiring layer, the waveguide hole guiding incident light onto a photoelectric converter, and the photoelectric converter converts incident light into a signal charge, The photoelectric converter is formed in the semiconductor substrate, the wiring layer is formed in the semiconductor substrate and includes an interlayer insulating film having a plurality of layer connection portions; the waveguide hole is filled with the waveguide material film, and the refractive index of the waveguide material film is higher than the refractive index of the interlayer insulating film And forming a waveguide in the waveguide hole; forming a color filter layer on the waveguide material film, and a flat insulating film interposed therebetween; and forming a microlens on the color filter layer, the microlens guiding the incident light to the photoelectric converter on. A plurality of unit pixels each having a photoelectric converter are arrayed in a row and column direction of a semiconductor substrate to form a pixel portion. The waveguide formed corresponding to the photoelectric converter has a cylindrical body whose cross section is kept constant from one end on the light incident side to one end on the light exit side, and is configured to make incident light incident on one end of the light incident side of the waveguide The center of the light is aligned with the central axis of the waveguide.

利用此實施例之固態影像拾取裝置的製造方法，波導的圓柱本體之橫剖面為從光入射側之一端至光出口側之一端為恆定的。於波導之光入射側的一端垂直入射的光線不會被波導的側壁反射，但會透過波導16而傳送。因此，可限制靈敏度的減少。又，從波導之光入射側的一端入射的光線中心對準波導之中央軸。因此，對於波導可實施瞳孔校正。因此，從透鏡入射的光線可有效地引導至波導。With the manufacturing method of the solid-state image pickup device of this embodiment, the cross section of the cylindrical body of the waveguide is constant from one end of the light incident side to one end of the light exit side. Light incident perpendicularly to one end of the light incident side of the waveguide is not reflected by the sidewall of the waveguide but is transmitted through the waveguide 16. Therefore, the reduction in sensitivity can be limited. Further, the center of the light incident from one end of the light incident side of the waveguide is aligned with the central axis of the waveguide. Therefore, pupil correction can be performed for the waveguide. Therefore, light incident from the lens can be efficiently guided to the waveguide.

根據本發明之一實施例的影像拾取裝置包含光線聚集光學單元，其聚集入射光；包含固態影像拾取裝置的影像拾取單元，固態影像拾取裝置接收光線聚集光學單元所聚集的光線並對光線實施光電轉換；及信號處理單元，其處理固態影像拾取裝置之光電轉換所獲得的信號。固態影像拾取裝置包含像素部位，其由以半導體基板的行及列方向排列成陣列的單位像素形成。單位像素群集包含光電轉換器，其形成於半導體基板上且將入射光轉換於信號電荷；波導，其形成於光電轉換器之上且引導入射光至光電轉換器；及微透鏡，其形成於波導之上且將入射光引導至波導之光入射側的一端。波導具有圓柱形本體，其之剖面從光入射側的一端至光出口側的一端保持為恆定。且係配置成使從波導之光入射側之一端的微透鏡所入射的光線的中心對準波導之中央軸。An image pickup apparatus according to an embodiment of the present invention includes a light concentrating optical unit that collects incident light, an image pickup unit including a solid-state image pickup device, and the solid-state image pickup device receives light collected by the light concentrating optical unit and photoelectricizes the light And a signal processing unit that processes signals obtained by photoelectric conversion of the solid-state image pickup device. The solid-state image pickup device includes a pixel portion formed of unit pixels arranged in an array in the row and column directions of the semiconductor substrate. The unit pixel cluster includes a photoelectric converter formed on the semiconductor substrate and converting incident light to signal charges; a waveguide formed over the photoelectric converter and guiding the incident light to the photoelectric converter; and a microlens formed on the waveguide Above and directed incident light to one end of the light incident side of the waveguide. The waveguide has a cylindrical body whose cross section is kept constant from one end on the light incident side to one end on the light exit side. And being arranged such that the center of the light incident from the microlens at one end of the light incident side of the waveguide is aligned with the central axis of the waveguide.

利用此實施例之影像拾取裝置，因為使用前述的固態影像拾取裝置，則可限制靈敏度的減少，且從微透鏡入射的光線可有效地被引導至波導。With the image pickup apparatus of this embodiment, since the solid-state image pickup device described above is used, the reduction in sensitivity can be restricted, and the light incident from the microlens can be efficiently guided to the waveguide.

因為即使是對於固態影像拾取裝置之波導亦實施瞳孔校正，則個別色彩的入射光被完全聚集至波導。因此，因為波長所導致的色彩不均(彩色遮光)可被減少。因為遮光被減少，當靈敏度定義為整體螢幕的輸出平均值時，則靈敏度可增加。例如，可減少曝光時間，且可於黑暗環境中捕捉影像。Since the pupil correction is performed even for the waveguide of the solid-state image pickup device, the incident light of the individual colors is completely collected to the waveguide. Therefore, color unevenness (color shading) due to wavelength can be reduced. Since the shading is reduced, the sensitivity can be increased when the sensitivity is defined as the average of the output of the overall screen. For example, exposure time can be reduced and images can be captured in dark environments.

利用固態影像拾取裝置之製造方法，因為即使是對於波導亦實施瞳孔校正，則個別色彩的入射光可被完全聚集至波導。因此，根據波長所造成的遮光的色彩不均(彩色遮光)可減少。因為減少遮光，當靈敏度定義為整體螢幕的輸出平均值時，可增加靈敏度。例如，可減少曝光時間，且可黑暗環境中實施影像捕捉。因此，可減少色差效應而不會增加處理的數目。With the manufacturing method of the solid-state image pickup device, since the pupil correction is performed even for the waveguide, the incident light of the individual colors can be completely collected to the waveguide. Therefore, color unevenness (color shading) of shading depending on the wavelength can be reduced. Because of the reduced shading, sensitivity is increased when sensitivity is defined as the average output of the overall screen. For example, exposure time can be reduced and image capture can be performed in a dark environment. Therefore, the chromatic aberration effect can be reduced without increasing the number of processes.

又，在微型化的像素中，可藉由調整各個色彩的瞳孔校正量而減少不進入波導的光線。可減少遮光及色彩混合。Further, in the miniaturized pixel, the light that does not enter the waveguide can be reduced by adjusting the pupil correction amount of each color. Reduces shading and color mixing.

因為根據此實施例之影像拾取裝置使用前述的固態影像拾取裝置，則因為波長的遮光而造成的色彩不均(彩色遮光)可被減少。靈敏度可增加，因此可獲得具有高品質的影像。Since the image pickup apparatus according to this embodiment uses the solid-state image pickup device described above, color unevenness (color shading) due to shading of wavelength can be reduced. The sensitivity can be increased, so that a high quality image can be obtained.

利用該固態影像拾取裝置，對於個別光電轉換器的入射光的入射效能可被等效。個別像素的光電轉換器可獲得光學對稱。例如，若使用像素共用類型的固態影像拾取裝置，則可減少或是消除不對稱基層的效應，且可減少共用彩色像素(相同彩色信號自該彩色像素輸出)的靈敏度之間的差異。此外，可減少彩色遮光。With the solid-state image pickup device, the incident efficiency of incident light to an individual photoelectric converter can be equivalent. The photoelectric converter of individual pixels can achieve optical symmetry. For example, if a pixel-shared type solid-state image pickup device is used, the effect of the asymmetric base layer can be reduced or eliminated, and the difference between the sensitivity of the shared color pixels (the same color signal is output from the color pixel) can be reduced. In addition, color shading can be reduced.

利用該電子裝置，可於固態影像拾取裝置的個別像素光電轉換器中提供光學對稱。可增加電子裝置之品質，且可提高其之影像品質。With the electronic device, optical symmetry can be provided in an individual pixel photoelectric converter of a solid-state image pickup device. It can increase the quality of electronic devices and improve their image quality.

以下將說明本發明之實施例。Embodiments of the invention will be described below.

1.第一實施例1. First embodiment 固態影像拾取裝置之第一例示性組構First exemplary structure of solid-state image pickup device

參照3A到3C的概略橫剖面圖及平面佈局圖來說明根據本發明之固態影像拾取裝置之第一實施例的例示性組構。圖3A顯示位於角範圍的中心的單位像素，圖3B顯示位於角範圍的邊緣的單位像素，圖3C顯示包含多數個單位像素的像素部位。An exemplary configuration of the first embodiment of the solid-state image pickup device according to the present invention will be described with reference to the schematic cross-sectional views of 3A to 3C and the plan layout. 3A shows a unit pixel located at the center of the angular range, FIG. 3B shows a unit pixel located at the edge of the angular range, and FIG. 3C shows a pixel portion including a plurality of unit pixels.

以下，參考標號1標示固態影像拾取裝置，11標示半導體基板，12標示光電轉換器，14標示層間絕緣膜，16標示波導，17標示彩色濾波層，18標示微透鏡，19標示波導孔，20標示像素部位，21標示單位像素，53標示波導材料膜，200標示影像拾取裝置，201標示影像拾取單元，202標示光線聚集光學單元，203標示信號處理單元，210(1)標示固態影像拾取裝置。Hereinafter, reference numeral 1 denotes a solid-state image pickup device, 11 denotes a semiconductor substrate, 12 denotes a photoelectric converter, 14 denotes an interlayer insulating film, 16 denotes a waveguide, 17 denotes a color filter layer, 18 denotes a microlens, 19 denotes a waveguide hole, and 20 denotes The pixel portion, 21 indicates a unit pixel, 53 indicates a waveguide material film, 200 indicates an image pickup device, 201 indicates an image pickup unit, 202 indicates a light collecting optical unit, 203 indicates a signal processing unit, and 210 (1) indicates a solid-state image pickup device.

參照圖3A到3C，光電轉換器12形成於半導體基板11的(光入射側)的表面上。光電轉換器12轉換入射光成為信號電荷。半導體基板11使用矽基板。或者，半導體基板11使用絕緣體上的矽(SOI)基板。在此情況中，光電轉換器12形成於SOI基板上的矽層上。接線層13形成於光電轉換器12之上。例如，形成接線層13以使包含接線部位15的多數層係形成於層間絕緣膜14中。接線部位15不會形成於光電轉換器12之上的區域中。層間絕緣14的表面被平坦化。Referring to FIGS. 3A to 3C, the photoelectric converter 12 is formed on the surface of the semiconductor substrate 11 (light incident side). The photoelectric converter 12 converts the incident light into a signal charge. The semiconductor substrate 11 uses a germanium substrate. Alternatively, the semiconductor substrate 11 uses a germanium (SOI) substrate on an insulator. In this case, the photoelectric converter 12 is formed on the ruthenium layer on the SOI substrate. The wiring layer 13 is formed over the photoelectric converter 12. For example, the wiring layer 13 is formed so that a plurality of layers including the wiring portion 15 are formed in the interlayer insulating film 14. The wiring portion 15 is not formed in a region above the photoelectric converter 12. The surface of the interlayer insulating layer 14 is planarized.

此外，波導16形成於光電轉換器12之上的區域的接線層13中。波導16引導入射光至光電轉換器12。形成波導16以使波導孔係形成於光電轉換器12之上的區域的層間絕緣膜14中，且以折射率高於層間絕緣膜14之折射率的光折射材料填充波導孔。材料為例如氮化矽膜、鑽石膜或是樹脂材料。Further, the waveguide 16 is formed in the wiring layer 13 of the region above the photoelectric converter 12. The waveguide 16 directs incident light to the photoelectric converter 12. The waveguide 16 is formed such that the waveguide hole is formed in the interlayer insulating film 14 in the region above the photoelectric converter 12, and the waveguide hole is filled with the light refraction material having a refractive index higher than that of the interlayer insulating film 14. The material is, for example, a tantalum nitride film, a diamond film or a resin material.

微透鏡18(亦稱為晶片上透鏡)形成於波導16之上的區域的層間絕緣膜14之上，且彩色濾波層17夾設於其之間。彩色濾波層17將入射光分離。微透鏡18引導彩色濾波層17發射的入射光至波導16之光入射側的一端。微透鏡18及彩色濾波層17接受瞳孔校正以有效地聚集均勻的傾斜光線。從角範圍的中心(例如相素部位的中心)朝向角範圍的邊緣，則瞳孔校正量越來越大。彩色濾波層17將入射光分成例如紅色光、綠色光及藍色光。因此，設置用於個別色彩的彩色濾波器。微透鏡18亦稱為晶片上透鏡。微透鏡18具有凸透鏡形狀且係設置於最上層。A microlens 18 (also referred to as an on-wafer lens) is formed over the interlayer insulating film 14 in a region above the waveguide 16, and a color filter layer 17 is interposed therebetween. The color filter layer 17 separates the incident light. The microlens 18 guides the incident light emitted from the color filter layer 17 to one end of the light incident side of the waveguide 16. The microlens 18 and color filter layer 17 accept pupil correction to effectively concentrate uniform oblique rays. From the center of the angular range (for example, the center of the phase portion) toward the edge of the angular range, the amount of pupil correction is getting larger and larger. The color filter layer 17 divides the incident light into, for example, red light, green light, and blue light. Therefore, a color filter for individual colors is set. Microlens 18 is also referred to as an on-wafer lens. The microlens 18 has a convex lens shape and is disposed on the uppermost layer.

光電轉換器12、波導16、彩色濾波層17、微透鏡18、轉換閘極(未顯示)等形成一單位像素21。以半導體基板11之行及列方向排列多數個單位像素21，以形成像素部位20。每個單位像素，或是每兩個單位像素，或是每四個單位像素設置像素放大單元(未顯示，亦稱為像素電晶體單元)。像素放大單元放大轉換閘極讀出的信號電荷，並輸出放大的信號電荷。The photoelectric converter 12, the waveguide 16, the color filter layer 17, the microlens 18, the switching gate (not shown), and the like form a unit pixel 21. A plurality of unit pixels 21 are arranged in a row and a column direction of the semiconductor substrate 11 to form a pixel portion 20. A pixel amplification unit (not shown, also referred to as a pixel transistor unit) is provided for each unit pixel, or every two unit pixels, or every four unit pixels. The pixel amplifying unit amplifies the signal charge read by the switching gate and outputs the amplified signal charge.

波導16形成於像素部位20中，以分別對應於光電轉換器12。各個波導16具有剖面從光入射側的一端到光出口側的一端為恆定的圓柱形本體。例如，具有恆定剖面的圓柱形本體可為圓柱體或是卵形柱體(包含橢圓形的圓柱體)。或者，波導16為具有圓角的稜鏡。從波導16之光入射側的一端入射的入射光的光線中心LC對準波導16之中央軸C。Waveguides 16 are formed in the pixel portion 20 to correspond to the photoelectric converter 12, respectively. Each of the waveguides 16 has a cylindrical body whose cross section is constant from one end on the light incident side to one end on the light exit side. For example, a cylindrical body having a constant cross section may be a cylinder or an oval cylinder (including an elliptical cylinder). Alternatively, the waveguide 16 is a crucible having rounded corners. The center of light LC of the incident light incident from one end of the light incident side of the waveguide 16 is aligned with the central axis C of the waveguide 16.

在此情況中，在角範圍的中心的單位像素21(見圖3A)中，入射光係以中央軸方向入射於微透鏡18。由微透鏡18聚集的入射光由彩色濾波層17傳送及分離，且係入射於波導16之光入射側的一端。沿著波導16的中央軸C引導入射光，並從波導16之光出口側的一端離開。光線發射到光電轉換器12的中心。亦即，透過微透鏡18傳送的入射光沿著彩色濾波層17的中心及波導16的中央軸C傳送，且發射到光電轉換器12的中央。因此，對於波導16不實施瞳孔校正。In this case, in the unit pixel 21 (see FIG. 3A) at the center of the angular range, the incident light is incident on the microlens 18 in the central axis direction. The incident light collected by the microlens 18 is transmitted and separated by the color filter layer 17, and is incident on one end of the light incident side of the waveguide 16. Incident light is guided along the central axis C of the waveguide 16 and exits from one end of the waveguide 16 on the light exit side. Light is emitted to the center of the photoelectric converter 12. That is, the incident light transmitted through the microlens 18 is transmitted along the center of the color filter layer 17 and the central axis C of the waveguide 16, and is emitted to the center of the photoelectric converter 12. Therefore, pupil correction is not performed for the waveguide 16.

在位於偏離角範圍的中心的單位像素21(參見圖3B)中，如上述，微透鏡18及彩色濾波層17接受瞳孔校正，以有效地聚集均勻的傾斜光。且，配置波導16以使從波導16之光入射側的一端入射的入射光線的中心LC對準波導16的中央軸C。亦即，對於波導16實施瞳孔校正。In the unit pixel 21 (see FIG. 3B) located at the center of the off-angle range, as described above, the microlens 18 and the color filter layer 17 receive pupil correction to effectively gather uniform oblique light. Further, the waveguide 16 is disposed such that the center LC of the incident light incident from the one end of the light incident side of the waveguide 16 is aligned with the central axis C of the waveguide 16. That is, pupil correction is performed on the waveguide 16.

在其上有相等波長的入射光射入的光電轉換器12中，各個波導16的中央軸C相對於對應的光電轉換器12的中心的位移量隨著在像素部位20的中心的光電轉換器12朝向外部而越來越大。也就是說，由微透鏡18聚集的入射光的入射角從像素部位20的中心朝向外部而越來越大。儘管已對於微透鏡18實施瞳孔校正，然而校正量並不充足。因此，對於具有相等波長的入射光而言，波導16之中央軸相對於光電轉換器12的中心的位移量增加，因此從微透鏡18入射的光線中心對準波導16的中央軸C。In the photoelectric converter 12 having the incident light of the same wavelength incident thereon, the displacement amount of the central axis C of each waveguide 16 with respect to the center of the corresponding photoelectric converter 12 follows the photoelectric converter at the center of the pixel portion 20. 12 is getting bigger and bigger towards the outside. That is, the incident angle of the incident light collected by the microlens 18 is larger and larger from the center of the pixel portion 20 toward the outside. Although the pupil correction has been performed for the microlens 18, the amount of correction is not sufficient. Therefore, for incident light having an equal wavelength, the amount of displacement of the central axis of the waveguide 16 with respect to the center of the photoelectric converter 12 is increased, and thus the center of the light incident from the microlens 18 is aligned with the central axis C of the waveguide 16.

波導16之直徑容許從波導16之光出口側的一端產生的光線發射到光電轉換器12之表面的區域中。因此，不像先前技術的波導，波導16的尺寸不等於光電轉換器12之表面的尺寸。波導16之直徑較佳為大於透過彩色濾波層17傳送到波導16之光入射側的入射光的照光直徑。照光直徑隨著入射光的波長而改變。例如，當彩色濾波層17將入射光分離為紅色光、綠色光及藍色光時，紅色光的照光直徑為最大，綠色光的照光直徑小於紅色光的照光直徑，藍色光的照光直徑小於綠色光的照光直徑。若波導16的直徑係取決於色彩而決定，則佈局很複雜。在某些情況中，波導16可達於接線層13之接線部位15。例如，基於具有入射光之中間波長範圍的綠色光而決定波導16之直徑。或者，若於波導16及接線層13之接線部位15之間有餘地，則可基於紅色光而決定波導16之直徑。The diameter of the waveguide 16 allows light generated from one end of the light exit side of the waveguide 16 to be emitted into a region of the surface of the photoelectric converter 12. Therefore, unlike the waveguide of the prior art, the size of the waveguide 16 is not equal to the size of the surface of the photoelectric converter 12. The diameter of the waveguide 16 is preferably larger than the diameter of the incident light transmitted through the color filter layer 17 to the light incident side of the waveguide 16. The illumination diameter changes with the wavelength of the incident light. For example, when the color filter layer 17 separates incident light into red light, green light, and blue light, the light diameter of the red light is the largest, the light diameter of the green light is smaller than the light diameter of the red light, and the light diameter of the blue light is smaller than the green light. The diameter of the illumination. If the diameter of the waveguide 16 is determined by the color, the layout is complicated. In some cases, the waveguide 16 can reach the junction 15 of the wiring layer 13. For example, the diameter of the waveguide 16 is determined based on green light having an intermediate wavelength range of incident light. Alternatively, if there is room between the waveguide 16 and the connection portion 15 of the wiring layer 13, the diameter of the waveguide 16 can be determined based on the red light.

如上述，可藉由減少波導16之直徑為小於先前技術之波導之直徑而增加瞳孔校正之餘地。此外，可藉由減少設置於波導16周圍的接線部位15的寬度而更進一步增加波導16之瞳孔校正的餘地。例如，可在一範圍中減少接線部位之線寬度，考慮處理，該範圍可避免因為減少線寬而增加接線層15的阻抗而產生的時脈延遲。例如，若接線部位15的線寬減少10 nm，則瞳孔校正的餘地可增加10 nm。As described above, the margin of pupil correction can be increased by reducing the diameter of the waveguide 16 to be smaller than the diameter of the waveguide of the prior art. Furthermore, the margin of pupil correction of the waveguide 16 can be further increased by reducing the width of the wiring portion 15 disposed around the waveguide 16. For example, the line width of the wiring portion can be reduced in a range, and the processing can be considered, which avoids the clock delay caused by increasing the impedance of the wiring layer 15 by reducing the line width. For example, if the line width of the wiring portion 15 is reduced by 10 nm, the room for pupil correction can be increased by 10 nm.

固態影像拾取裝置1(1A)係組構為上述。The solid-state image pickup device 1 (1A) is configured as described above.

瞳孔校正之例示性計算Exemplary calculation of pupil correction

接著，參照圖4A及4B之概略橫剖面圖說明計算固態影像拾取裝置1之瞳孔校正量的例示性方法。圖4A顯示位於角範圍的中心的單位像素。圖4B顯示位於角範圍的邊緣的單位像素。Next, an exemplary method of calculating the pupil correction amount of the solid-state image pickup device 1 will be described with reference to the schematic cross-sectional views of FIGS. 4A and 4B. Figure 4A shows a unit pixel located at the center of the angular range. Figure 4B shows the unit pixels at the edges of the angular range.

參照圖4A，在位於角範圍的中心的單位像素21中，入射光係以中央軸方向入射於微透鏡18之上。由微透鏡18聚集的入射光由彩色濾波層17傳送及分離，且係入射於波導16之光入射側的一端。沿著波導16之中央軸C引導入射光，且其係從波導16之光出口側的一端離開。光發射到光電轉換器12的中心上。也就是說，透過微透鏡18的中心傳送的入射光沿著彩色濾波層17的中心及波導16的中央軸C傳送，並發射到光電轉換器12的中心上。因此，對於波導16不實施瞳孔校正。Referring to FIG. 4A, in the unit pixel 21 located at the center of the angular range, the incident light is incident on the microlens 18 in the central axis direction. The incident light collected by the microlens 18 is transmitted and separated by the color filter layer 17, and is incident on one end of the light incident side of the waveguide 16. The incident light is guided along the central axis C of the waveguide 16, and it exits from one end of the waveguide 16 on the light exit side. Light is emitted to the center of the photoelectric converter 12. That is, the incident light transmitted through the center of the microlens 18 is transmitted along the center of the color filter layer 17 and the central axis C of the waveguide 16, and is emitted to the center of the photoelectric converter 12. Therefore, pupil correction is not performed for the waveguide 16.

相比之下，在位於角範圍的邊緣的單位像素21中，參照圖4B，計算入射到微透鏡18的入射光的入射角θ1為例如θ1=25°位置時的瞳孔校正量。In contrast, in the unit pixel 21 located at the edge of the angular range, referring to FIG. 4B, the pupil angle correction amount when the incident angle θ1 of the incident light incident on the microlens 18 is, for example, θ1=25° is calculated.

微透鏡18的折射率n為n=1.5。The refractive index n of the microlens 18 is n = 1.5.

若微透鏡18周圍的大氣的折射率n0為n0=1，且微透鏡18的折射率n1為n1=1.6時，則可建立如下關係：If the refractive index n0 of the atmosphere around the microlens 18 is n0=1, and the refractive index n1 of the microlens 18 is n1=1.6, the following relationship can be established:

sinθ2=(n0/n1)×sinθ1Sin θ2=(n0/n1)×sinθ1

若θ1=25°，則結果如下If θ1=25°, the result is as follows

θ2=sin-1{(n0/n1)×sinθ1}=sin-1{(1/1.6)×sin25}=15.3°Θ2=sin-1{(n0/n1)×sinθ1}=sin-1{(1/1.6)×sin25}=15.3°

例如，當波導16之光入射側的一端作為參考位置(參考位準)時，高度h1代表從參考位置到微透鏡18的形成平面的高度，且高度h2代表從參考位置到彩色濾波層17之入射平面的高度。For example, when one end of the light incident side of the waveguide 16 serves as a reference position (reference level), the height h1 represents the height from the reference position to the plane in which the microlens 18 is formed, and the height h2 represents the position from the reference position to the color filter layer 17. The height of the incident plane.

例如，假設h1=2μm，h2=1.5μm。在此情況中，波導16之中央軸C與微透鏡18之中央軸LC之間的差量X_OCL'如下For example, assume that h1 = 2 μm and h2 = 1.5 μm. In this case, the difference X_OCL' between the central axis C of the waveguide 16 and the central axis LC of the microlens 18 is as follows

X_OCL'=h1×tanθ 2+X_WG=2×tan 15.3°+X_WG=0.547μm+X_WGX_OCL'=h1×tanθ 2+X_WG=2×tan 15.3°+X_WG=0.547μm+X_WG

其中X_WG為光電轉換器12與波導16之中央軸C之間的差量。Where X_WG is the difference between the photoelectric converter 12 and the central axis C of the waveguide 16.

又，波導16之中央軸C與彩色濾波層17之中央軸FC之間的差量X_CF'如下：Further, the difference X_CF' between the central axis C of the waveguide 16 and the central axis FC of the color filter layer 17 is as follows:

X_CF'=h2×tanθ 2+X_WG=1.5×tan 15.3°+X_WG=0.411μm +X_WGX_CF'=h2×tanθ 2+X_WG=1.5×tan 15.3°+X_WG=0.411μm +X_WG

若在波導16之光出口側之一端的繞射角θ3為θ3=13.0°，則至光電轉換器12之表面的擴散寬度w如下If the diffraction angle θ3 at one end of the light exit side of the waveguide 16 is θ3 = 13.0°, the diffusion width w to the surface of the photoelectric converter 12 is as follows

W=h3×tanθ3W=h3×tanθ3

若從光電轉換器12到波導16之光出口側的一端的距離h3為例如h3=0.5μm，則結果如下If the distance h3 from the photoelectric converter 12 to one end of the light exit side of the waveguide 16 is, for example, h3 = 0.5 μm, the result is as follows

W=h3×tanθ3=0.5×tan 13.0°=0.115μmW=h3×tanθ3=0.5×tan 13.0°=0.115μm

例如，若光電轉換器的寬度PD為PD=1.1μm，且波導16之直徑WG' 為WG' =0.6μm，從繞射光到形成於相鄰光電轉換器12之轉換閘極之半導體基板11的投影位置的距離α為由下式表示For example, if the width PD of the photoelectric converter is PD = 1.1 μm, and the diameter WG ' of the waveguide 16 is WG ' = 0.6 μm, from the diffracted light to the semiconductor substrate 11 formed on the switching gate of the adjacent photoelectric converter 12 The distance α of the projection position is expressed by

(PD-WG' )/2>W+α(PD-WG ' )/2>W+α

利用上式，則數值變成如下Using the above formula, the value becomes as follows

(1.1-0.6)/2>0.11+α(1.1-0.6)/2>0.11+α

因此，可提供瞳孔校正X_ WG直到條件變成以下為止：Therefore, the pupil correction X _ WG can be provided until the condition becomes the following:

α＜0.25-0.115=0.135μmα<0.25-0.115=0.135μm

接著，說明計算繞射角θ3的方法。Next, a method of calculating the diffraction angle θ3 will be described.

基於楊氏實驗，若d為像素間距×2，n為1(1階繞射光)，且λ為入射光的波長，則可提供下式Based on the Young's experiment, if d is the pixel pitch × 2, n is 1 (first-order diffracted light), and λ is the wavelength of the incident light, the following formula can be provided.

d×sinθ=nλd×sin θ=nλ

因此，結果如下Therefore, the results are as follows

θ=sin-1(nλ/d)θ=sin-1(nλ/d)

例如，若d=1.4μm×2=2.80μm且n=1，且若紅色光的波長λ為λ=630 nm(紅色)，則紅色光的繞射角θ如下For example, if d=1.4μm×2=2.80μm and n=1, and if the wavelength λ of the red light is λ=630 nm (red), the diffraction angle θ of the red light is as follows

θ=sin-1(0.63/2.8)=13.00°θ=sin-1(0.63/2.8)=13.00°

作為參考，若藍色光的波長λblue為λblue=450 nm(藍色)，則藍光的繞射角如下For reference, if the wavelength λblue of the blue light is λblue=450 nm (blue), the diffraction angle of the blue light is as follows

θblue=sin-1(0.45/2.8)=9.25°Θblue=sin-1(0.45/2.8)=9.25°

又，若綠色光的波長λgreen為λgreen=550 nm(綠色)，則綠色光的繞射角如下Further, if the wavelength λgreen of the green light is λgreen=550 nm (green), the diffraction angle of the green light is as follows

θgreen=sin-1(0.55/2.8)=11.33°Θgreen=sin-1(0.55/2.8)=11.33°

接著，參照圖5A及5B的概略橫剖面圖說明根據先前技術之固態影像拾取裝置之結構作為比較性範例。圖5A顯示位於角範圍的中心的單位像素。圖5B顯示位於角範圍的邊緣的單位像素。Next, the structure of the solid-state image pickup device according to the prior art will be described as a comparative example with reference to the schematic cross-sectional views of FIGS. 5A and 5B. Figure 5A shows the unit pixels at the center of the angular range. Figure 5B shows the unit pixels at the edges of the angular range.

參考圖5A及5B，在單位像素21中，光電轉換器12形成於半導體基板11(的光入射側的)表面上。光電轉換器12轉換入射光成為信號電荷。接線層13形成於光電轉換器12之上。例如，形成接線層13以使包含接線部位15的多數層形成於層間絕緣膜14中。接線部位15不是形成於光電轉換器12之上方區域中。層間絕緣膜14的表面被平坦化。Referring to FIGS. 5A and 5B, in the unit pixel 21, the photoelectric converter 12 is formed on the surface of (on the light incident side of) the semiconductor substrate 11. The photoelectric converter 12 converts the incident light into a signal charge. The wiring layer 13 is formed over the photoelectric converter 12. For example, the wiring layer 13 is formed such that a plurality of layers including the wiring portion 15 are formed in the interlayer insulating film 14. The wiring portion 15 is not formed in the upper region of the photoelectric converter 12. The surface of the interlayer insulating film 14 is planarized.

此外，波導16形成於光電轉換器12之上方區域的接線層13中。波導16引導入射光至光電轉換器12。微透鏡18(亦稱為晶片上透鏡)形成於波導16之上方區域的層間絕緣膜14之上，且彩色濾波層17夾設於其之間。彩色濾波層17分離入射光。微透鏡18引導從彩色濾波層17發射的入射光至波導16之光入射側的一端。彩色濾波層17將入射光分離為例如紅色光、綠色光及藍色光。因此，設置用於個別色彩的彩色濾波器。微透鏡18亦被稱為晶片上透鏡。微透鏡18具有凸透鏡形狀且係設置於最上層。Further, the waveguide 16 is formed in the wiring layer 13 in the region above the photoelectric converter 12. The waveguide 16 directs incident light to the photoelectric converter 12. A microlens 18 (also referred to as an on-wafer lens) is formed over the interlayer insulating film 14 in the region above the waveguide 16, with the color filter layer 17 interposed therebetween. The color filter layer 17 separates the incident light. The microlens 18 guides the incident light emitted from the color filter layer 17 to one end of the light incident side of the waveguide 16. The color filter layer 17 separates incident light into, for example, red light, green light, and blue light. Therefore, a color filter for individual colors is set. Microlens 18 is also referred to as an on-wafer lens. The microlens 18 has a convex lens shape and is disposed on the uppermost layer.

參照圖5A，在角範圍的中心的單位像素21中，入射光係以中央軸方向入射於微透鏡18。由微透鏡18聚集的入射光由彩色濾波層17傳送及分離，且入射於波導16之光入射側的一端。沿著波導16之中央軸C引導入射光，且其從波導16之光出口側離開。光發射到光電轉換器12的中心。亦即，透過微透鏡18之中心傳送的入射光係沿著彩色濾波層17的中心及波導16之中央軸C傳送，且發射到光電轉換器12的中心。因此，並未對於微透鏡18或是彩色濾波層17實施瞳孔校正。Referring to FIG. 5A, in the unit pixel 21 at the center of the angular range, the incident light is incident on the microlens 18 in the central axis direction. The incident light collected by the microlens 18 is transmitted and separated by the color filter layer 17, and is incident on one end of the light incident side of the waveguide 16. Incident light is directed along the central axis C of the waveguide 16, and it exits from the light exit side of the waveguide 16. Light is emitted to the center of the photoelectric converter 12. That is, the incident light transmitted through the center of the microlens 18 is transmitted along the center of the color filter layer 17 and the central axis C of the waveguide 16, and is emitted to the center of the photoelectric converter 12. Therefore, pupil correction is not performed on the microlens 18 or the color filter layer 17.

相比之下，參照圖5B，在偏離角範圍的中心的單位像素21中，微透鏡18及彩色濾波層17接受瞳孔校正，以有效地聚集均勻的傾斜光。從角範圍的中心朝向角範圍的邊緣而使瞳孔校正量益發增加。In contrast, referring to FIG. 5B, in the unit pixel 21 at the center of the off-angle range, the microlens 18 and the color filter layer 17 receive pupil correction to effectively collect uniform oblique light. The pupil correction amount is increased from the center of the angular range toward the edge of the angular range.

接著，參照圖6A及6B之概略橫剖面圖說明根據比較性範例之計算瞳孔校正量的方法。圖6A顯示位於角範圍中心的單位像素。圖6B顯示位於角範圍的邊緣的單位像素。Next, a method of calculating the pupil correction amount according to the comparative example will be described with reference to the schematic cross-sectional views of FIGS. 6A and 6B. Figure 6A shows a unit pixel at the center of the angular range. Figure 6B shows the unit pixels at the edges of the angular range.

參照圖6A，在角範圍的中心的單位像素21中，入射光以中央軸方向入射於微透鏡18上。由微透鏡18聚集的入射光藉由彩色濾波層17傳送及分離，且入射於波導16之光入射側的一端。沿著波導16之中央軸C引導入射光，且其係自波導16之光出口側的一端離開。光線發射到光電轉換器12的中心。亦即，透過微透鏡18的中心傳送的入射光沿著彩色濾波層17的中心及波導16之中央軸C傳送，且發射到光電轉換器12的中心。因此，對於波導16不實施瞳孔校正。Referring to FIG. 6A, in the unit pixel 21 at the center of the angular range, incident light is incident on the microlens 18 in the central axis direction. The incident light collected by the microlens 18 is transmitted and separated by the color filter layer 17, and is incident on one end of the light incident side of the waveguide 16. Incident light is directed along the central axis C of the waveguide 16, and it exits from one end of the waveguide 16 on the light exit side. Light is emitted to the center of the photoelectric converter 12. That is, the incident light transmitted through the center of the microlens 18 is transmitted along the center of the color filter layer 17 and the central axis C of the waveguide 16, and is emitted to the center of the photoelectric converter 12. Therefore, pupil correction is not performed for the waveguide 16.

相比之下，參照圖6B，在先前技術的固態影像拾取裝置中，即使是對於角範圍的邊緣的單位像素21亦不對於波導16實施瞳孔校正。於此，計算例如入射角θ1為θ1=25°的位置入射於微透鏡18的入射光對於微透鏡18及彩色濾波層17的瞳孔校正量。In contrast, referring to FIG. 6B, in the solid-state image pickup device of the prior art, the pupil correction is not performed on the waveguide 16 even for the unit pixel 21 of the edge of the angular range. Here, for example, the pupil correction amount of the incident light incident on the microlens 18 at the position where the incident angle θ1 is θ1=25° with respect to the microlens 18 and the color filter layer 17 is calculated.

例如，微透鏡18的F數為F=2.8，且微透鏡18的折射率n為n=1.5。For example, the F number of the microlens 18 is F = 2.8, and the refractive index n of the microlens 18 is n = 1.5.

又，邊緣光的角度θ3為θ3=6.8°。Further, the angle θ3 of the edge light is θ3 = 6.8°.

若微透鏡18周圍的大氣的折射率n0為n0=1，且微透鏡18的折射率n1為n1=1.6，則可建立以下關係If the refractive index n0 of the atmosphere around the microlens 18 is n0=1, and the refractive index n1 of the microlens 18 is n1=1.6, the following relationship can be established.

sinθ2=(n0/n1)×sinθ1Sin θ2=(n0/n1)×sinθ1

若θ1=25°，則結果如下If θ1=25°, the result is as follows

θ2=sin-1{(n0/n1)×sinθ1}=sin-1{(1/1.6)×sin25}=15.3°Θ2=sin-1{(n0/n1)×sinθ1}=sin-1{(1/1.6)×sin25}=15.3°

舉例而言，當波導16的光入射側的一端作為參考位置(參考位準)時，高度h1代表從參考位置至微透鏡18的形成平面的高度，高度h2代表從參考位置至彩色濾波層17的入射平面的高度。For example, when one end of the light incident side of the waveguide 16 serves as a reference position (reference level), the height h1 represents the height from the reference position to the formation plane of the microlens 18, and the height h2 represents the reference position to the color filter layer 17 The height of the incident plane.

例如，假設h1=2μm，h2=1.5μm。在此情況中，波導16之中央軸C(光電轉換器之中心)與微透鏡18之中央軸LC之間的差量X_OCL如下For example, assume that h1 = 2 μm and h2 = 1.5 μm. In this case, the difference X_OCL between the central axis C of the waveguide 16 (the center of the photoelectric converter) and the central axis LC of the microlens 18 is as follows

X_OCL=h1×tanθ2=2×tan15.3°=0.547μmX_OCL=h1×tanθ2=2×tan15.3°=0.547μm

又，波導16之中央軸C與彩色濾波層17之中央軸FC之間的差量X_CF如下Moreover, the difference X_CF between the central axis C of the waveguide 16 and the central axis FC of the color filter layer 17 is as follows

X_CF=h2×tanθ2=1.5×tan15.3°=0.411μmX_CF=h2×tanθ2=1.5×tan15.3°=0.411μm

在此實施例中，對於波導16不實施瞳孔校正。因此，可能會發生參照圖3A到3C所述的問題。In this embodiment, pupil correction is not performed for the waveguide 16. Therefore, the problems described with reference to FIGS. 3A to 3C may occur.

在固態影像拾取裝置1中，波導16具有圓柱形本體，其之剖面為從光入射側的一端至光出口側的一端保持恆定。垂直入射於波導16之光入射側的光線並不會被波導16的側壁反射，但會透過波導16傳送。因為光線不被波導16的側壁反射，則可限制靈敏度的減少。又，因為入射於波導16之光入射側的一端的光線中心對準波導16之中央軸，則可將入射光有效地引導至波導16。亦即，即使是對波導16亦實施瞳孔校正。In the solid-state image pickup device 1, the waveguide 16 has a cylindrical body whose cross section is kept constant from one end on the light incident side to one end on the light exit side. The light incident perpendicularly to the light incident side of the waveguide 16 is not reflected by the side wall of the waveguide 16, but is transmitted through the waveguide 16. Since the light is not reflected by the side walls of the waveguide 16, the reduction in sensitivity can be limited. Further, since the center of the light incident on one end of the light incident side of the waveguide 16 is aligned with the central axis of the waveguide 16, the incident light can be efficiently guided to the waveguide 16. That is, the pupil correction is performed even on the waveguide 16.

因為即使是對固態影像拾取裝置1中之波導16亦實施瞳孔校正，則可完全聚集個別色彩之入射光至波導16。因此，因為波長的遮光造成的色彩不均(彩色遮光)則可減少。Since even the pupil 16 in the solid-state image pickup device 1 is subjected to pupil correction, the incident light of the individual colors can be completely collected to the waveguide 16. Therefore, color unevenness (color shading) due to shading of the wavelength can be reduced.

此外，從光電轉換器12的表面到波導16的光出口側的一端的距離應為預定距離，以避免出現白點。例如，若形成於光電轉換器12與波導16之間的層間絕緣膜14係由氧化矽製成，則從光電轉換器12到波導16的預定距離為例如大約500 nm。Further, the distance from the surface of the photoelectric converter 12 to one end of the light exit side of the waveguide 16 should be a predetermined distance to avoid occurrence of white spots. For example, if the interlayer insulating film 14 formed between the photoelectric converter 12 and the waveguide 16 is made of yttria, the predetermined distance from the photoelectric converter 12 to the waveguide 16 is, for example, about 500 nm.

決定波導16的直徑以使從波導16之光出口側的一端發射並因為繞射造成的具有擴散特性的入射光係發射至光電轉換器12的表面的區域內。因此，因為從波導16發射的光線的擴散部位亦被發射至光電轉換器12之上，則可增加靈敏度。The diameter of the waveguide 16 is determined such that incident light having a diffusion characteristic emitted from one end of the light exit side of the waveguide 16 and having a diffusion characteristic due to diffraction is emitted into a region of the surface of the photoelectric converter 12. Therefore, since the diffusion portion of the light emitted from the waveguide 16 is also emitted onto the photoelectric converter 12, the sensitivity can be increased.

因為減少遮光，當將靈敏度定義為整體螢幕的輸出平均時，則可增加靈敏度，且可減少曝光時間。實際結果為綠色光的靈敏度可增加4%，紅色光的靈敏度可增加3%，藍色光的靈敏度可增加2%。Since the shading is reduced, when the sensitivity is defined as the output average of the overall screen, the sensitivity can be increased and the exposure time can be reduced. The actual result is that the sensitivity of green light can be increased by 4%, the sensitivity of red light can be increased by 3%, and the sensitivity of blue light can be increased by 2%.

在先前技術中，波導16的尺寸可在相對於接線部位15的餘地的範圍中盡可能的增加，以增加靈敏度。從波導16之光出口側的一端發射的入射光藉由繞射而被擴散及發射。因此，若波導16的直徑盡可能等於光電轉換器12的表面的尺寸，則向外的光線的擴散部位不會發射至光電轉換器12。此擴散部位將造成靈敏度減少。In the prior art, the size of the waveguide 16 can be increased as much as possible in the range of the room relative to the wiring portion 15 to increase the sensitivity. Incident light emitted from one end of the light exit side of the waveguide 16 is diffused and emitted by diffraction. Therefore, if the diameter of the waveguide 16 is as large as possible equal to the size of the surface of the photoelectric converter 12, the diffused portion of the outward light is not emitted to the photoelectric converter 12. This diffusion site will cause a decrease in sensitivity.

接著，說明波導16之直徑減少。如上述，波導16的直徑容許從波導16之光出口側的一端的入射光被發射至光電轉換器12的表面的區域內。因此，不像先前技術的波導，波導16的尺寸不等於光電轉換器12的表面的尺寸。此外，減少波導之直徑。例如，儘管結構類似於先前技術，其中接線部位15與波導16之間的空間僅為覆蓋餘地，但可藉由減少波導16之直徑而對波導16實施瞳孔校正。例如，假設先前技術之波導16的直徑為1.5μm。藉由減少波導16之直徑至1μm，則可將各側之直徑各減少0.25μm。如此則可實施0.25μm之瞳孔校正。如上述，波導16之直徑較佳為透過彩色濾波層17傳送至波導16之光入射側的一端的入射光的照光直徑。例如，基於具有入射光的中間波長範圍的綠色光而決定波導16的直徑。或者，若在波導16與接線層13的接線部位15之夾設有餘地，則可基於紅色光而決定波導16之直徑。Next, the diameter reduction of the waveguide 16 will be described. As described above, the diameter of the waveguide 16 allows incident light from one end of the light exit side of the waveguide 16 to be emitted into the region of the surface of the photoelectric converter 12. Therefore, unlike the waveguide of the prior art, the size of the waveguide 16 is not equal to the size of the surface of the photoelectric converter 12. In addition, the diameter of the waveguide is reduced. For example, although the structure is similar to the prior art, in which the space between the wiring portion 15 and the waveguide 16 is only a cover, the pupil 16 can be corrected by reducing the diameter of the waveguide 16. For example, assume that the waveguide 16 of the prior art has a diameter of 1.5 μm. By reducing the diameter of the waveguide 16 to 1 μm, the diameter of each side can be reduced by 0.25 μm each. In this way, a pupil correction of 0.25 μm can be performed. As described above, the diameter of the waveguide 16 is preferably the diameter of the incident light transmitted to the one end of the light incident side of the waveguide 16 through the color filter layer 17. For example, the diameter of the waveguide 16 is determined based on green light having an intermediate wavelength range of incident light. Alternatively, if there is room for the connection between the waveguide 16 and the connection portion 15 of the wiring layer 13, the diameter of the waveguide 16 can be determined based on the red light.

在前述的微型化像素的情況中，根據從波導16至接線部位15的距離而決定瞳孔校正量。例如，減少波導16之直徑至預期值，以使其大於入射於波導16之入射光的照光直徑。決定欲減少的量以達成預期的瞳孔校正量。然而，若瞳孔校正量不夠，如上述，則接線15的線寬被減少以增加瞳孔校正量。在本發明之此實施例中的波導16之瞳孔校正並不僅是對於具有如先前技術的結構的波導16而實施，還提供波導16之瞳孔校正量，例如，藉由減少波導16之直徑或是減少接線部位15的線寬。因此，可提供充足的瞳孔校正量。彩色遮光可顯著減少。波導16之瞳孔校正量相比於微透鏡18或是彩色濾波層17的瞳孔校正量的比例為常數。例如，波導16之瞳孔校正量為微透鏡18的瞳孔校正量的0.2倍。In the case of the aforementioned miniaturized pixel, the pupil correction amount is determined based on the distance from the waveguide 16 to the connection portion 15. For example, the diameter of the waveguide 16 is reduced to an expected value such that it is larger than the illumination diameter of the incident light incident on the waveguide 16. The amount to be reduced is determined to achieve the desired amount of pupil correction. However, if the pupil correction amount is insufficient, as described above, the line width of the wiring 15 is reduced to increase the pupil correction amount. The pupil correction of the waveguide 16 in this embodiment of the invention is not only implemented for a waveguide 16 having a structure as in the prior art, but also provides a pupil correction amount for the waveguide 16, for example, by reducing the diameter of the waveguide 16 or The line width of the wiring portion 15 is reduced. Therefore, an adequate amount of pupil correction can be provided. Color shading can be significantly reduced. The ratio of the pupil correction amount of the waveguide 16 is constant as compared with the pupil correction amount of the microlens 18 or the color filter layer 17. For example, the pupil correction amount of the waveguide 16 is 0.2 times the pupil correction amount of the microlens 18.

在第一例示性範例所述之固態影像拾取裝置1中，大幅改變對於先前技術之波導16的想法。明確而言，在先前技術中，波導16之直徑在相對於接線部位15之餘地的範圍之內盡可能增加，以增加靈敏度。相比之下，在上述的固態影像拾取裝置1中，只要波導16的直徑大於光入射側的一端的入射光的照光直徑，則波導16的直徑(光入射側的一端的直徑)盡可能的減少，以使從波導16發射的全部向外光線被發射至光電轉換器12上。此為與先前技術之波導大幅不同的重點。此外，如上述，另一重點為對於波導16實施瞳孔校正亦為與先前技術之波導明顯不同。In the solid-state image pickup device 1 described in the first exemplary example, the idea of the waveguide 16 of the prior art is largely changed. Specifically, in the prior art, the diameter of the waveguide 16 is increased as much as possible within the range of the margin with respect to the wiring portion 15 to increase the sensitivity. In contrast, in the above-described solid-state image pickup device 1, as long as the diameter of the waveguide 16 is larger than the illumination diameter of the incident light at one end on the light incident side, the diameter of the waveguide 16 (the diameter of one end on the light incident side) is as large as possible. The reduction is such that all of the outward light rays emitted from the waveguide 16 are emitted onto the photoelectric converter 12. This is a major difference from the previous technology. Moreover, as noted above, another important point is that the pupil correction for the waveguide 16 is also significantly different from prior art waveguides.

固態影像拾取裝置1較佳為取決於彩色濾波層17分離的入射光的色彩而對於波導16具有不同的瞳孔校正量。參照圖7A至7C的概略橫剖面圖來說明此點。圖7A至7C顯示位於距角範圍的中心(例如像素部位的中心)相等距離，且具有不同色彩的彩色濾波層17的單位像素。圖7A顯示藍色的單位像素，圖7B顯示綠色的單位像素，圖7C顯示紅色的單位像素。The solid-state image pickup device 1 preferably has different pupil correction amounts for the waveguide 16 depending on the color of the incident light separated by the color filter layer 17. This point will be explained with reference to the schematic cross-sectional views of Figs. 7A to 7C. 7A to 7C show unit pixels of the color filter layer 17 having an equal distance from the center of the angular range (for example, the center of the pixel portion) and having different colors. FIG. 7A shows a unit pixel of blue, FIG. 7B shows a unit pixel of green, and FIG. 7C shows a unit pixel of red.

在固態影像拾取裝置1中，參照圖7A至7C，在相等波長的光線入射的光電轉換器12中，在像素部位20中，各個波導16的中央軸C相對於對應的光電轉換器12的中央軸FC的位移量隨著位於像素部位20的中心的光電轉換器12移動向外而逐漸變大。換而言之，考慮位於距離像素部位20的中心相等距離的光電轉換器12，各個波導16的中央軸C相對於對應的光電轉換器12的中央軸FC的位移量隨著彩色濾波層17所分離且入射於光電轉換器12上的光線的波長變大而逐漸變小。In the solid-state image pickup device 1, referring to FIGS. 7A to 7C, in the photoelectric converter 12 in which light of equal wavelength is incident, in the pixel portion 20, the central axis C of each waveguide 16 is opposed to the center of the corresponding photoelectric converter 12. The displacement amount of the shaft FC gradually becomes larger as the photoelectric converter 12 located at the center of the pixel portion 20 moves outward. In other words, considering the photoelectric converter 12 located at an equal distance from the center of the pixel portion 20, the displacement amount of the central axis C of each waveguide 16 with respect to the central axis FC of the corresponding photoelectric converter 12 follows the color filter layer 17 The wavelength of the light that is separated and incident on the photoelectric converter 12 becomes larger and becomes smaller.

更明確而言，當固態影像拾取裝置1的光電轉換器12的間距為1到3μm且波導16的直徑為大約0.5到2.5μm時，波導16的瞳孔校正量滿足以下關係「藍色光(B)＜綠色光(G)＜紅色光(R)」。應注意者為，為了簡化平面佈局，波導16小於光電轉換器12。例如，對於其上入射藍色光的波導16實施大約20到50 nm的瞳孔校正，對於其上入射綠色光的波導16實施大約50到80 nm的瞳孔校正，對於其上入射紅色光的波導16實施大約80到110 nm的瞳孔校正。因此，可最佳化各個波導16的遮光。More specifically, when the pitch of the photoelectric converter 12 of the solid-state image pickup device 1 is 1 to 3 μm and the diameter of the waveguide 16 is about 0.5 to 2.5 μm, the pupil correction amount of the waveguide 16 satisfies the following relationship "blue light (B) <Green light (G) <Red light (R). It should be noted that in order to simplify the planar layout, the waveguide 16 is smaller than the photoelectric converter 12. For example, a pupil correction of about 20 to 50 nm is performed for the waveguide 16 on which the blue light is incident, and a pupil correction of about 50 to 80 nm is performed for the waveguide 16 on which the green light is incident, for the waveguide 16 on which the red light is incident. Pupil correction of approximately 80 to 110 nm. Therefore, the shading of each of the waveguides 16 can be optimized.

典型上，由微透鏡18聚集的入射光的入射角可隨著位置從像素部位20的中心偏離朝向外部而增加。對於微透鏡18實施瞳孔校正，然而，此瞳孔校正量並不足夠。因此，如上述，對於具有相同波長的入射光而言，各個波導16的中央軸相對於對應的光電轉換器12的中心的距離增加，以使從微透鏡18產生的光線中心對準波導16的中央軸。Typically, the incident angle of the incident light collected by the microlens 18 may increase as the position deviates from the center of the pixel portion 20 toward the outside. The pupil correction is performed for the microlens 18, however, this pupil correction amount is not sufficient. Therefore, as described above, for incident light having the same wavelength, the distance of the central axis of each waveguide 16 with respect to the center of the corresponding photoelectric converter 12 is increased so that the center of the light generated from the microlens 18 is aligned with the waveguide 16. Central axis.

一般而言，微透鏡18及彩色濾波層17接受瞳孔校正，以使入射光係以中央軸方向入射於光電轉換器12上。例如，對於微透鏡18及具有參考波長(例如綠色光)入射光的彩色濾波層17實施瞳孔校正。在此情況中，參照圖7A，因為藍色光容易由微透鏡18彎曲，則當入射於波導16的光入射側的一端時，藍色光的入射角很大。因此，即使當微透鏡18及彩色濾波層17藉由瞳孔校正而相對於光電轉換器12的中央軸FC而大幅偏離像素部位的中心，從彩色濾波層17發射的光線入射於波導16的光入射側的一端，靠近光電轉換器12的中央軸FC的位置。因此，波導16的光入射側的一端的幾乎全部的入射光被引導至波導16。在此情況中，校正波導16的位置以使入射至波導16的光入射側的一端的入射光的光線的中央軸LC對準波導16的中央軸C。In general, the microlens 18 and the color filter layer 17 receive pupil correction so that the incident light is incident on the photoelectric converter 12 in the central axis direction. For example, pupil correction is performed on the microlens 18 and the color filter layer 17 having incident light of a reference wavelength (e.g., green light). In this case, referring to FIG. 7A, since the blue light is easily bent by the microlens 18, the incident angle of the blue light is large when incident on one end of the light incident side of the waveguide 16. Therefore, even when the microlens 18 and the color filter layer 17 largely deviate from the center of the pixel portion with respect to the central axis FC of the photoelectric converter 12 by the pupil correction, the light emitted from the color filter layer 17 is incident on the light of the waveguide 16. One end of the side is close to the position of the central axis FC of the photoelectric converter 12. Therefore, almost all of the incident light of one end of the light incident side of the waveguide 16 is guided to the waveguide 16. In this case, the position of the waveguide 16 is corrected such that the central axis LC of the light of the incident light incident on one end of the light incident side of the waveguide 16 is aligned with the central axis C of the waveguide 16.

相比之下，參照圖7C，比起藍色光而言，因為微透鏡18難以彎曲紅色光，則當紅色光入射於波導16的光入射側的一端時，入射角小於藍色光的入射角。又，因為微透鏡18及彩色濾波層17已藉由瞳孔校正而相對於光電轉換器12的中央軸FC而大幅偏離像素部位的中心，則從彩色濾波層17發射的光線入射至波導16的光入射側的一端，至離光電轉換器12的中央軸FC一段距離的位置。在某些情況中，光線入射以使光的主要部份從波導16的光入射側的一端突出。然而，在本發明之此實施例中，校正波導16的位置以使入射於波導16的光入射側的一端的入射光的光線的中央軸LC對準波導16的中央軸C。因此，從彩色濾波層17發射的幾乎全部的入射光入射至波導16的光入射側的一端，且被引導至波導16。In contrast, referring to FIG. 7C, since the microlens 18 is difficult to bend red light compared to the blue light, when the red light is incident on one end of the light incident side of the waveguide 16, the incident angle is smaller than the incident angle of the blue light. Further, since the microlens 18 and the color filter layer 17 have largely deviated from the center of the pixel portion with respect to the central axis FC of the photoelectric converter 12 by pupil correction, the light emitted from the color filter layer 17 is incident on the light of the waveguide 16. One end of the incident side is at a position away from the central axis FC of the photoelectric converter 12. In some cases, the light is incident such that a major portion of the light protrudes from one end of the light incident side of the waveguide 16. However, in this embodiment of the invention, the position of the waveguide 16 is corrected such that the central axis LC of the incident light incident on one end of the light incident side of the waveguide 16 is aligned with the central axis C of the waveguide 16. Therefore, almost all of the incident light emitted from the color filter layer 17 is incident on one end of the light incident side of the waveguide 16, and is guided to the waveguide 16.

又，參照圖7B，比起藍色光而言，微透鏡18難以彎曲綠色光，而比起紅色光而言，微透鏡18容易彎曲綠色光。入射於波導16的光入射側的入射光的入射角小於藍色光的入射角，但大於紅色光的入射角。因為微透鏡18及彩色濾波層17已藉由瞳孔校正而相對光電轉換器12的中央軸FC偏離角範圍的中心，則從彩色濾波層17發射的光線入射於波導16的光入射側的一端，於距離光電轉換器12的中央軸FC一段距離的位置。然而，在本發明之此實施例中，校正波導16的位置以使入射於波導16的光入射側的一端的入射光的光線中央軸LC對準波導16的中央軸C。因此，從彩色濾波層17發射的幾乎全部的入射光入射於波導16的光入射側的一端且被引導至波導16。Further, referring to FIG. 7B, it is difficult for the microlens 18 to bend green light compared to the blue light, and the microlens 18 is likely to bend green light compared to the red light. The incident angle of the incident light incident on the light incident side of the waveguide 16 is smaller than the incident angle of the blue light, but larger than the incident angle of the red light. Since the microlens 18 and the color filter layer 17 have been deviated from the center of the angular range of the photoelectric converter 12 by the pupil correction, the light emitted from the color filter layer 17 is incident on one end of the light incident side of the waveguide 16, At a distance from the central axis FC of the photoelectric converter 12. However, in this embodiment of the invention, the position of the waveguide 16 is corrected such that the central axis LC of the incident light of the incident light incident on the light incident side of the waveguide 16 is aligned with the central axis C of the waveguide 16. Therefore, almost all of the incident light emitted from the color filter layer 17 is incident on one end of the light incident side of the waveguide 16 and guided to the waveguide 16.

如上述，各個波導16的中央軸C相對於對應的光電轉換器12的中心的偏移量隨著由彩色濾波層17分離的光線波長變小而漸小。因此，即使當波導16的光入射側的一端的入射光的波長各為不同，但可根據波長而分別設置波導16，單位像素21之靈敏度相同，且不會發生彩色遮光。As described above, the offset amount of the central axis C of each of the waveguides 16 with respect to the center of the corresponding photoelectric converter 12 becomes smaller as the wavelength of the light separated by the color filter layer 17 becomes smaller. Therefore, even when the wavelengths of the incident light at one end of the light incident side of the waveguide 16 are different, the waveguide 16 can be separately provided according to the wavelength, and the sensitivity of the unit pixel 21 is the same, and color shading does not occur.

固態影像拾取裝置之第二例示性組構Second exemplary structure of solid-state image pickup device

參照圖8的平面圖及圖9A至9C的橫剖面圖說明本發明之第一實施例的固態影像拾取裝置的第二例示性組構。在圖8及9A至9C中，舉例而言，四個像素共用一個像素電晶體單元。四個單位像素形成一個單位像素群集。A second exemplary configuration of the solid-state image pickup device of the first embodiment of the present invention will be described with reference to the plan view of FIG. 8 and the cross-sectional views of FIGS. 9A to 9C. In FIGS. 8 and 9A to 9C, for example, four pixels share one pixel transistor unit. Four unit pixels form a unit pixel cluster.

參照圖8、9A至9C，單位像素群集22包含例如兩個第一單位像素21(21G)、單一個第二單位像素21(21B)、及單一個第三單位像素21(21R)。第一單位像素21G包含其上入射由彩色濾波層17(17G)所分離的第一波長(例如綠色光G)的光線的光電轉換器12(12G)。第二單位像素21B包含其上入射由彩色濾波層17B所分離的第二波長(藍色光B)的光線的光電轉換器12B。第二波長小於第一波長(綠色光)。第三單位像素21R包含其上入射由彩色濾波層17R所分離的第三波長(紅色光R)的光線的光電轉換器12R。第三波長大於第一波長。Referring to FIGS. 8, 9A to 9C, the unit pixel cluster 22 includes, for example, two first unit pixels 21 (21G), a single second unit pixel 21 (21B), and a single third unit pixel 21 (21R). The first unit pixel 21G includes a photoelectric converter 12 (12G) on which light of a first wavelength (for example, green light G) separated by the color filter layer 17 (17G) is incident. The second unit pixel 21B includes a photoelectric converter 12B on which light of a second wavelength (blue light B) separated by the color filter layer 17B is incident. The second wavelength is less than the first wavelength (green light). The third unit pixel 21R includes a photoelectric converter 12R on which light of a third wavelength (red light R) separated by the color filter layer 17R is incident. The third wavelength is greater than the first wavelength.

考慮各個波導16的中央軸C相對於對應的光電轉換器12的中央軸FC在單位像素群集22內的位移量，波導16的中央軸C相對於光電轉換器12的中心的位移量隨著由彩色濾波層17所分離的光的波長變小而漸小。又，各個波導16的中央軸C相對於對應的光電轉換器12的中央軸FC的位移量朝向像素部位20的中心而越來越大。換而言之，從角範圍的中心(例如像素部位的中心)朝向角範圍的邊緣時，位移量越來越大，且從光電轉換器12偏離的方向係為朝向角範圍的中心。Considering the amount of displacement of the central axis C of each waveguide 16 with respect to the central axis FC of the corresponding photoelectric converter 12 within the unit pixel cluster 22, the amount of displacement of the central axis C of the waveguide 16 with respect to the center of the photoelectric converter 12 is The wavelength of the light separated by the color filter layer 17 becomes smaller and smaller. Further, the displacement amount of the central axis C of each waveguide 16 with respect to the central axis FC of the corresponding photoelectric converter 12 is larger toward the center of the pixel portion 20. In other words, from the center of the angular range (for example, the center of the pixel portion) toward the edge of the angular range, the amount of displacement becomes larger and larger, and the direction deviated from the photoelectric converter 12 is toward the center of the angular range.

固態影像拾取裝置1(1B)係組構如上述。應注意者為，第一單位像素21G、第二單位像素21B、第三單位像素21R各具有類似於固態影像拾取裝置1之第一例示性組構的結構。The solid-state image pickup device 1 (1B) is organized as described above. It should be noted that the first unit pixel 21G, the second unit pixel 21B, and the third unit pixel 21R each have a structure similar to that of the first exemplary configuration of the solid-state image pickup device 1.

固態影像拾取裝置1B為所謂的多數像素共用類型(四像素共用類型)，其為多數個(或是四個)像素共用一個浮動擴散、一個放大器電晶體及一個選擇電晶體。各個波導16的中央軸相對於對應的光電轉換器12的中心的位移量隨著入射於波導16的光入射側的一端的入射光的波長變小而漸增。在此種四個像素共用類型中，考慮四個像素(單位像素21)，第三單位像素21R的波導16的位移量(瞳孔校正量)大於第一單位像素21G所具有者，且第二單位像素21B的波導16的位移量(瞳孔校正量)小於第一單位像素21G所具有者。The solid-state image pickup device 1B is a so-called majority pixel sharing type (four-pixel sharing type) which shares a floating diffusion, an amplifier transistor, and a selection transistor for a plurality of (or four) pixels. The displacement amount of the central axis of each waveguide 16 with respect to the center of the corresponding photoelectric converter 12 gradually increases as the wavelength of incident light incident on one end of the light incident side of the waveguide 16 becomes smaller. In such four pixel sharing types, four pixels (unit pixel 21) are considered, and the displacement amount (the pupil correction amount) of the waveguide 16 of the third unit pixel 21R is larger than that of the first unit pixel 21G, and the second unit The displacement amount (the pupil correction amount) of the waveguide 16 of the pixel 21B is smaller than that of the first unit pixel 21G.

典型上，微透鏡18及彩色濾波層17接受瞳孔校正，以使入射光係以中央軸方向入射於光電轉換器12上。例如，對於具有參考波長(例如綠色光)的入射光的微透鏡18及彩色濾波層17實施瞳孔校正。在此情況中，因為藍色光易為微透鏡18彎曲，則當入射於波導16的光入射側的一端時，藍色光的入射角變大。即使當微透鏡18及彩色濾波層17藉由瞳孔校正而相對於光電轉換器12的中央軸FC大幅偏離角範圍的中心(例如像素部位的中心)，從彩色濾波層17發射的光線係入射於波導16的光入射側的一端的靠近光電轉換器12的中央軸FC的位置。因此，波導16的光入射側的一端的幾乎全部的入射光被引導至波導16。相比之下，因為比起藍色光而言，紅色光難以被微透鏡18彎曲，當入射於波導16的光入射側的一端時，紅色光的入射角小於藍色光的入射角。因為微透鏡18及彩色濾波層17已藉由瞳孔校正而相對於光電轉換器12的中央軸FC而偏離像素部位的中心，則從彩色濾波層17發射的光線入射於波導16的光入射側的一端的距離光電轉換器12的中央軸FC一段距離的位置。在某些情況中，光線入射以使光的主要部份從波導16的光入射側的一端突出。然而，在本發明之此實施例中，校正波導16的位置以使波導16的光入射側的一端的入射光的光線的中央軸LC對準波導16的中央軸C。因此，從彩色濾波層17發射的入射光入射於波導16的光入射側的一端，且被引導至波導16。又，比起藍色光而言，綠色光難以被微透鏡18彎曲，但比起紅色光而言，綠色光容易被微透鏡18彎曲。波導16的光入射側的一端的入射光的入射小小於藍色光的入射角，但大於紅色光的入射角。因為微透鏡18及彩色濾波層17已藉由瞳孔校正而相對於光電轉換器12的中央軸FC而偏離角範圍的中心，則從彩色濾波層17發射的光線入射於波導16的光入射側的一端的距離光電轉換器12的中央軸FC一段距離的位置。然而，利用本實施例，校正波導16的位置以使波導16的光入射側的一端的入射光的光線中心對準波導16的中央軸C。從彩色濾波層17發射的入射光入射於波導16的光入射側的一端且被引導至波導16。如上述，考慮單位像素群集22之內的波導16，各個波導16的中央軸C相對於對應的光電轉換器12的中央軸FC的位移量隨著由彩色濾波層17分離的波長變小而漸小。因此，即使當波導16的光入射側的一端的入射光的波長互為不同，但仍可根據波長而分別配置波導16，單位像素21之靈敏度相等，且不會產生彩色遮光。Typically, the microlens 18 and the color filter layer 17 are subjected to pupil correction such that the incident light is incident on the photoelectric converter 12 in the central axis direction. For example, pupil correction is performed on the microlens 18 and the color filter layer 17 having incident light of a reference wavelength (e.g., green light). In this case, since the blue light is easily bent by the microlens 18, when incident on one end of the light incident side of the waveguide 16, the incident angle of the blue light becomes large. Even when the microlens 18 and the color filter layer 17 are largely deviated from the center of the angular range with respect to the central axis FC of the photoelectric converter 12 by the pupil correction (for example, the center of the pixel portion), the light emitted from the color filter layer 17 is incident on the light. The end of the light incident side of the waveguide 16 is close to the position of the central axis FC of the photoelectric converter 12. Therefore, almost all of the incident light of one end of the light incident side of the waveguide 16 is guided to the waveguide 16. In contrast, since red light is hard to be bent by the microlens 18 than blue light, when incident on one end of the light incident side of the waveguide 16, the incident angle of the red light is smaller than the incident angle of the blue light. Since the microlens 18 and the color filter layer 17 have deviated from the center of the pixel portion with respect to the central axis FC of the photoelectric converter 12 by pupil correction, the light emitted from the color filter layer 17 is incident on the light incident side of the waveguide 16. One end is at a distance from the central axis FC of the photoelectric converter 12. In some cases, the light is incident such that a major portion of the light protrudes from one end of the light incident side of the waveguide 16. However, in this embodiment of the invention, the position of the waveguide 16 is corrected such that the central axis LC of the light of the incident light at one end of the light incident side of the waveguide 16 is aligned with the central axis C of the waveguide 16. Therefore, the incident light emitted from the color filter layer 17 is incident on one end of the light incident side of the waveguide 16, and is guided to the waveguide 16. Further, the green light is hard to be bent by the microlens 18 than the blue light, but the green light is easily bent by the microlens 18 than the red light. The incident light of one end of the light incident side of the waveguide 16 is smaller than the incident angle of the blue light, but larger than the incident angle of the red light. Since the microlens 18 and the color filter layer 17 have deviated from the center of the angular range with respect to the central axis FC of the photoelectric converter 12 by pupil correction, the light emitted from the color filter layer 17 is incident on the light incident side of the waveguide 16. One end is at a distance from the central axis FC of the photoelectric converter 12. However, with the present embodiment, the position of the waveguide 16 is corrected such that the center of the ray of the incident light at one end of the light incident side of the waveguide 16 is aligned with the central axis C of the waveguide 16. The incident light emitted from the color filter layer 17 is incident on one end of the light incident side of the waveguide 16 and guided to the waveguide 16. As described above, considering the waveguide 16 within the unit pixel cluster 22, the displacement amount of the central axis C of each waveguide 16 with respect to the central axis FC of the corresponding photoelectric converter 12 becomes smaller as the wavelength separated by the color filter layer 17 becomes smaller. small. Therefore, even when the wavelengths of the incident light at one end of the light incident side of the waveguide 16 are different from each other, the waveguides 16 can be respectively arranged according to the wavelength, and the sensitivity of the unit pixels 21 is equal, and color shading does not occur.

固態影像拾取裝置的第三例示性組構The third exemplary structure of solid-state image pickup device

以下參照圖10A至10D的橫剖面圖說明根據本發明之第一實施例的固態影像拾取裝置的第三例示性組構。參照圖10A至10D，除了波導16之組構之外，第三範例之固態影像拾取裝置具有之組構類似於第一範例之固態影像拾取裝置1之組構。A third exemplary configuration of the solid-state image pickup device according to the first embodiment of the present invention will be described below with reference to cross-sectional views of Figs. 10A to 10D. Referring to FIGS. 10A to 10D, in addition to the configuration of the waveguide 16, the solid-state image pickup device of the third example has a configuration similar to that of the solid-state image pickup device 1 of the first example.

參照圖10A及10B，單位像素21包含具有第一波導16A及第二波導16B的波導16。第一波導16A形成波導16的周圍部份。第二波導16B形成於第一波導16A之內，且其之折射率低於第一波導16A之折射率。第一波導16A亦可形成於第二波導16B的底部部份。圖10A顯示位於角範圍的中心部位的單位像素21。圖10B顯示位於距離角範圍的中心一段距離且靠近角範圍的邊緣的位置的單位像素21。類似於第一範例之固態影像拾取裝置1，當波導16越靠近角範圍的邊緣時，對於波導16實施瞳孔校正。Referring to FIGS. 10A and 10B, the unit pixel 21 includes a waveguide 16 having a first waveguide 16A and a second waveguide 16B. The first waveguide 16A forms a peripheral portion of the waveguide 16. The second waveguide 16B is formed within the first waveguide 16A and has a lower refractive index than the first waveguide 16A. The first waveguide 16A may also be formed at a bottom portion of the second waveguide 16B. Fig. 10A shows the unit pixel 21 at the center of the angular range. FIG. 10B shows the unit pixel 21 located at a distance from the center of the angular range and near the edge of the angular range. Similar to the solid-state image pickup device 1 of the first example, pupil correction is performed on the waveguide 16 as the waveguide 16 is closer to the edge of the angular range.

舉例而言，參照圖11，其顯示具有之尺寸為2μm的光電轉換器12(例如光二極體)的波導16之直徑為1μm的結構。此結構可設計成對於最靠近角範圍的編為的部份實施0.45μm的瞳孔校正。第一波導16A形成於第一波導16A之內，以藉由使用折射率n1為大約1.8的膜(例如選擇自氮化物的材料形成的膜)形成波導16的側壁。以自樹脂選擇的材料且具有折射率n2大約為1.4的薄膜形成第二波導16B。因此，第一波導16A的二側壁具有之厚度為100 nm。因此，第一波導16的側壁的兩側的厚度為200 nm。第二波導16B的直徑為800 nm。若第一波導16A的薄膜為以選擇自氮化物的材料膜(例如氮化矽膜)所形成，則薄膜具有鈍化膜的效用。For example, referring to Fig. 11, there is shown a structure in which the waveguide 16 having the photoelectric converter 12 (e.g., photodiode) having a size of 2 μm has a diameter of 1 μm. This configuration can be designed to perform a 0.45 μm pupil correction for the portion of the braid that is closest to the angular extent. The first waveguide 16A is formed within the first waveguide 16A to form a sidewall of the waveguide 16 by using a film having a refractive index n1 of about 1.8 (for example, a film formed of a material selected from nitride). The second waveguide 16B is formed of a film selected from a resin and having a refractive index n2 of about 1.4. Therefore, the two side walls of the first waveguide 16A have a thickness of 100 nm. Therefore, the thickness of both sides of the side wall of the first waveguide 16 is 200 nm. The second waveguide 16B has a diameter of 800 nm. If the film of the first waveguide 16A is formed of a material film (for example, a tantalum nitride film) selected from a nitride, the film has the effect of a passivation film.

接著，參照圖10C及10D說明入射光的光學路徑。圖10C顯示位於角範圍的中心部位的單位像素21。圖10D顯示位於距離角範圍的中心一段距離且靠近角範圍的邊緣的單位像素21。參照圖10C，透過微透鏡18及彩色濾波層17傳送的入射光主要聚集於作為側壁部位的第一波導16A，因為在角範圍的中心的波導16中，側壁部位中的第一波導16A具有的折射率高於中心部位的第二波導16B的折射率。Next, an optical path of incident light will be described with reference to FIGS. 10C and 10D. Fig. 10C shows the unit pixel 21 at the central portion of the angular range. Figure 10D shows a unit pixel 21 located at a distance from the center of the angular range and near the edge of the angular extent. Referring to FIG. 10C, incident light transmitted through the microlens 18 and the color filter layer 17 is mainly concentrated on the first waveguide 16A as a side wall portion, because in the waveguide 16 at the center of the angular range, the first waveguide 16A in the side wall portion has The refractive index is higher than the refractive index of the second waveguide 16B at the center portion.

相比之下，參照圖10D，當對於波導16實施瞳孔校正時，儘管波導16係位於接近角範圍的邊緣的位置(折射率滿足所述之n1>n2)透過微透鏡18及彩色濾波層17傳送的入射光的光線可引導至光電轉換器12的中心。特別是，從第二波導16B進入第一波導16A而入射於波導16的傾斜入射光在具有之折射率高於第二波導16B之折射率的第一波導16A之內被反射，其被發射至光出口側的一端，且被發射至光電轉換器12。因為透過波導16引導光，則將波導16(第一波導16A)之材料的折射率決定為高於波導16周圍的其他材料的折射率為合理。特別是，對於位於角範圍的邊緣的波導16實施瞳孔校正，以使波導16的中央軸C對準波導16的光入射側的一端的入射光的光線中央軸LC。因此，波導16的中央軸C相對於光電轉換器12的中心而偏移朝向角範圍的中心。因此，即使入射於波導16的光入射側的一端的入射光係入射於第二波導16B，該光線進入折射率高於第二波導16B之折射率的第一波導16A。光線在第一波導16A之內傳送且從發射端射向光電轉換器12。又，因為係從靠近角範圍的中心的位置將入射光發射朝向靠近角範圍的邊緣的位置，則入射光係以傾斜方式射入第二波導16B而朝向角範圍的邊緣。因此，光線透過靠近第一波導16A的角範圍的邊緣部位而傳送。也就是說，因為靠近第一波導16A的角範圍的邊緣的部位靠近光電轉換器12的中心，則射入第二波導16B的入射光透過第一波導16A傳送，且有效地發射至光電轉換器12上。In contrast, referring to FIG. 10D, when pupil correction is performed for the waveguide 16, although the waveguide 16 is located at a position close to the edge of the angular range (the refractive index satisfies the above n1>n2), the microlens 18 and the color filter layer 17 are transmitted. The transmitted light of the incident light can be directed to the center of the photoelectric converter 12. In particular, oblique incident light entering the first waveguide 16A from the second waveguide 16B and incident on the waveguide 16 is reflected within the first waveguide 16A having a refractive index higher than that of the second waveguide 16B, which is emitted to One end of the light exit side is emitted to the photoelectric converter 12. Since the light is guided through the waveguide 16, it is reasonable to determine the refractive index of the material of the waveguide 16 (the first waveguide 16A) to be higher than the refractive index of other materials around the waveguide 16. In particular, the pupil 16 at the edge of the angular range is subjected to pupil correction such that the central axis C of the waveguide 16 is aligned with the central axis LC of the incident light of one end of the light incident side of the waveguide 16. Therefore, the central axis C of the waveguide 16 is offset toward the center of the angular range with respect to the center of the photoelectric converter 12. Therefore, even if incident light incident on one end of the light incident side of the waveguide 16 is incident on the second waveguide 16B, the light enters the first waveguide 16A having a higher refractive index than that of the second waveguide 16B. Light is transmitted within the first waveguide 16A and is directed from the transmitting end to the photoelectric converter 12. Further, since the incident light is emitted toward a position close to the edge of the angular range from a position close to the center of the angular range, the incident light is incident obliquely into the second waveguide 16B toward the edge of the angular range. Therefore, light is transmitted through the edge portion close to the angular range of the first waveguide 16A. That is, since the portion near the edge of the angular range of the first waveguide 16A is close to the center of the photoelectric converter 12, the incident light incident on the second waveguide 16B is transmitted through the first waveguide 16A, and is efficiently transmitted to the photoelectric converter. 12 on.

因為波導16具有包含第一波導16A及第二波導16B的結構，光線從波導16的底部直到光電轉換器12的漏光量可被最小化。即使聚合矽電極61等設置於靠近光電轉換器12，光線係入射於光電轉換器12的中心或是靠近中心的部位，被聚合矽電極61遮蔽的元件量可減少。若具有前述結構的波導16由單一材料製成，則藉由減少波導16之直徑，可減少聚合矽電極61遮蔽的光量。Since the waveguide 16 has a structure including the first waveguide 16A and the second waveguide 16B, the amount of light leakage from the bottom of the waveguide 16 to the photoelectric converter 12 can be minimized. Even if the polymerized germanium electrode 61 or the like is disposed close to the photoelectric converter 12, the light is incident on the center of the photoelectric converter 12 or near the center, and the amount of the element shielded by the polymerized electrode 61 can be reduced. If the waveguide 16 having the foregoing structure is made of a single material, the amount of light blocked by the polymerized germanium electrode 61 can be reduced by reducing the diameter of the waveguide 16.

又，可對於光電轉換器12、像素電晶體(未顯示)、接線層13(未顯示)的接線部位15實施瞳孔校正。因此，可減少像素電晶體所遮蔽的光量，且可減少彩色遮光。Further, pupil correction can be performed on the wiring portion 15 of the photoelectric converter 12, the pixel transistor (not shown), and the wiring layer 13 (not shown). Therefore, the amount of light blocked by the pixel transistor can be reduced, and color shading can be reduced.

2.第二實施例2. Second Embodiment 製造固態影像拾取裝置的第一例示性方法First exemplary method of manufacturing a solid-state image pickup device

接著，參照圖12至21說明根據本發明之第二實施例的固態影像拾取裝置的第一例示性製造方法。Next, a first exemplary manufacturing method of a solid-state image pickup device according to a second embodiment of the present invention will be described with reference to Figs.

參照圖12，於半導體基板11的表面上(光入射側)形成光電轉換器12。光電轉換器12轉換入射光為信號電荷。又，於半導體基板11上形成轉換閘極31。轉換閘極31讀取接受光電轉換器12之光電轉換的信號電荷。更進一步，儘管並未顯示，可於半導體基板11的表面上形成像素電晶體及周圍電路單元。像素電晶體放大及輸出接受光電轉換器12之光電轉換的信號電荷。周圍電路單元處理放大及輸出的信號。半導體基板11使用例如矽基板。或者，半導體基板11可使用絕緣體上的矽(SOI)基板。在此情況中，光電轉換器12、轉換閘極31等為形成於SOI基板的矽層上。Referring to Fig. 12, a photoelectric converter 12 is formed on the surface (light incident side) of the semiconductor substrate 11. The photoelectric converter 12 converts the incident light into a signal charge. Further, a switching gate 31 is formed on the semiconductor substrate 11. The switching gate 31 reads the signal charge that receives the photoelectric conversion of the photoelectric converter 12. Further, although not shown, the pixel transistor and the peripheral circuit unit can be formed on the surface of the semiconductor substrate 11. The pixel transistor amplifies and outputs a signal charge that is subjected to photoelectric conversion by the photoelectric converter 12. The surrounding circuit unit processes the amplified and output signals. As the semiconductor substrate 11, for example, a germanium substrate is used. Alternatively, a germanium (SOI) substrate on an insulator may be used for the semiconductor substrate 11. In this case, the photoelectric converter 12, the switching gate 31, and the like are formed on the germanium layer of the SOI substrate.

多數個各具有光電轉換器12的單位像素21以半導體基板11的行及列方向排列以形成像素部位20。A plurality of unit pixels 21 each having the photoelectric converter 12 are arranged in the row and column directions of the semiconductor substrate 11 to form the pixel portion 20.

絕緣膜形成於半導體基板11上以覆蓋光電轉換器12、轉換閘極31、像素電晶體、周圍電路單元等，藉此形成接線層13。例如，形成接線層13以使多數個包含接線部位15的層形成於層間絕緣膜14中。阻障金屬層141形成於接線部位15周圍。在層間絕緣膜14中，例如碳化矽(SiC)膜形成作為防擴散膜142，其可防止金屬等從接線部位15擴散。層間絕緣膜14可由氧化矽(SiO2 )膜形成。層間絕緣膜14的表面被平坦化。接線部位15不形成於光電轉換器12之上的區域中。An insulating film is formed on the semiconductor substrate 11 to cover the photoelectric converter 12, the switching gate 31, the pixel transistor, the surrounding circuit unit, and the like, thereby forming the wiring layer 13. For example, the wiring layer 13 is formed such that a plurality of layers including the wiring portions 15 are formed in the interlayer insulating film 14. A barrier metal layer 141 is formed around the wiring portion 15. In the interlayer insulating film 14, for example, a tantalum carbide (SiC) film is formed as the diffusion preventive film 142, which prevents diffusion of metal or the like from the wiring portion 15. The interlayer insulating film 14 may be formed of a yttrium oxide (SiO 2 ) film. The surface of the interlayer insulating film 14 is planarized. The wiring portion 15 is not formed in a region above the photoelectric converter 12.

接著，參照圖13，於接線層13頂部的層間絕緣膜14之上藉由典型的光阻處理形成光阻膜51。利用微影技術，在將形成波導之上的區域中，於光阻膜51中形成開口52。當獲得開口52的佈局時，對於波導實施如參照圖3A至3C、4A及4B等所說明的瞳孔校正。特別是，形成開口52以使將形成於開口52之下的波導的中央軸對準入射於波導的光入射側的一端的入射光的光線的中心。Next, referring to Fig. 13, a photoresist film 51 is formed on the interlayer insulating film 14 on the top of the wiring layer 13 by a typical photoresist treatment. With the lithography technique, an opening 52 is formed in the photoresist film 51 in a region where the waveguide is to be formed. When the layout of the opening 52 is obtained, the pupil correction as explained with reference to Figs. 3A to 3C, 4A and 4B and the like is performed for the waveguide. Specifically, the opening 52 is formed such that the central axis of the waveguide to be formed under the opening 52 is aligned with the center of the light of the incident light incident on one end of the light incident side of the waveguide.

接著，參照圖14，藉由以光阻膜51作為蝕刻遮罩，以乾式蝕刻在接線層13的層間絕緣膜14中製造用以形成波導的波導孔19。此時，形成波導孔19以使波導孔19的側壁為垂直的，且波導孔19的深度大約為4到5μm。又，波導孔19具有從開口朝向底部部位為恆定的橫剖面。開口的形狀可為圓形、卵形(包含橢圓形)等。或者，波導孔19的開口的形狀可為矩形，例如具有圓角的正方形。Next, referring to Fig. 14, a waveguide hole 19 for forming a waveguide is formed in the interlayer insulating film 14 of the wiring layer 13 by dry etching using the photoresist film 51 as an etching mask. At this time, the waveguide holes 19 are formed such that the side walls of the waveguide holes 19 are vertical, and the waveguide holes 19 have a depth of about 4 to 5 μm. Further, the waveguide hole 19 has a constant cross section from the opening toward the bottom portion. The shape of the opening may be a circle, an oval (including an ellipse), or the like. Alternatively, the shape of the opening of the waveguide hole 19 may be a rectangle, for example, a square having rounded corners.

接著，參照圖15，移除光阻膜51(見圖14)，以容許接線層13中之層間絕緣膜14曝光。Next, referring to FIG. 15, the photoresist film 51 (see FIG. 14) is removed to allow the interlayer insulating film 14 in the wiring layer 13 to be exposed.

接著，參照圖16，以波導材料膜53填充波導孔19。Next, referring to Fig. 16, the waveguide hole 19 is filled with the waveguide material film 53.

對於波導材料而言，選擇折射率高於接線層13中之層間絕緣膜14的折射率的材料。舉例而言，當層間絕緣膜14為由選擇自氧化矽材料製成的薄膜且具有1.4的折射率時，波導材料膜53為折射率為1.4或是更高的薄膜。波導材料膜53使用選擇自氮化物且具有之折射率大約為1.8的材料製成。例如，可使用氮化矽膜。波導材料膜53亦形成於層間絕緣膜14之上。波導材料膜53可藉由塗佈、化學氣相沉積等而形成。因此，以填充波導孔19之波導材料膜53形成波導16。For the waveguide material, a material having a refractive index higher than that of the interlayer insulating film 14 in the wiring layer 13 is selected. For example, when the interlayer insulating film 14 is a film made of a material selected from cerium oxide and has a refractive index of 1.4, the waveguide material film 53 is a film having a refractive index of 1.4 or higher. The waveguide material film 53 is made of a material selected from a nitride and having a refractive index of about 1.8. For example, a tantalum nitride film can be used. A waveguide material film 53 is also formed over the interlayer insulating film 14. The waveguide material film 53 can be formed by coating, chemical vapor deposition, or the like. Therefore, the waveguide 16 is formed with the waveguide material film 53 filling the waveguide holes 19.

接著，參照圖17，形成用以平坦化波導材料膜53的表面的平坦絕緣膜54。平坦絕緣膜54係由例如樹脂層形成。Next, referring to FIG. 17, a flat insulating film 54 for planarizing the surface of the waveguide material film 53 is formed. The flat insulating film 54 is formed of, for example, a resin layer.

接著，參照圖18，在平坦絕緣膜54上形成彩色濾波層17。彩色濾波層17係由塗佈彩色濾波材料，然後透過曝光、顯影等的圖案化而形成。彩色濾波層17使用例如紅色彩色濾波器、綠色彩色濾波器及藍色彩色濾波器以對應於將由個別光電轉換器12感測的色彩。彩色濾波層17的佈局亦接受瞳孔校正。Next, referring to FIG. 18, a color filter layer 17 is formed on the flat insulating film 54. The color filter layer 17 is formed by applying a color filter material and then patterning by exposure, development, or the like. The color filter layer 17 uses, for example, a red color filter, a green color filter, and a blue color filter to correspond to colors to be sensed by the individual photoelectric converters 12. The layout of the color filter layer 17 also accepts pupil correction.

接著，參照圖19，於彩色濾波層17上形成透鏡形成膜55。透鏡形成膜55為用於微透鏡(亦稱為晶片上透鏡)的材料。透鏡形成膜55係由例如透光樹脂膜形成。Next, referring to Fig. 19, a lens forming film 55 is formed on the color filter layer 17. The lens forming film 55 is a material for a microlens (also referred to as a lens on a wafer). The lens forming film 55 is formed of, for example, a light-transmitting resin film.

接著，參照圖20，於透鏡形成膜55上形成用於微透鏡的光阻圖案56。光阻圖案56的佈局接受瞳孔校正。然後，儘管未顯示，鑄模光阻圖案56以使其具有透鏡形狀。然後，鑄模的具有透鏡形狀的光阻圖案56藉由回蝕刻轉移到透鏡形成膜55。Next, referring to FIG. 20, a photoresist pattern 56 for a microlens is formed on the lens forming film 55. The layout of the photoresist pattern 56 accepts pupil correction. Then, although not shown, the photoresist pattern 56 is molded to have a lens shape. Then, the resist pattern 56 having a lens shape of the mold is transferred to the lens forming film 55 by etch back.

因此，參照圖21，於透鏡形成膜55上形成微透境18。Therefore, referring to FIG. 21, a micro-permeable layer 18 is formed on the lens forming film 55.

在上述的製造方法中，波導16具有從光入射側的一端到光出口側的一端的恆定剖面形狀。垂直入射於波導16的光入射側的一端的光線不會被波導16的側壁反射，但會透過波導16傳送。因此，可限制靈敏度的減少。又，因為於波導16的光入射側的一端的入射光的光線中心對準波導16的中央軸，則入射光有效地被引導至波導16。因此，可製造固態影像拾取裝置1(1A)，其提供類似於第一實施例中之第一範例的固態影像拾取裝置所提供的效應及優點。In the above manufacturing method, the waveguide 16 has a constant cross-sectional shape from one end on the light incident side to one end on the light exit side. Light rays incident perpendicularly to one end of the light incident side of the waveguide 16 are not reflected by the side walls of the waveguide 16, but are transmitted through the waveguide 16. Therefore, the reduction in sensitivity can be limited. Further, since the center of the ray of the incident light at one end of the light incident side of the waveguide 16 is aligned with the central axis of the waveguide 16, the incident light is efficiently guided to the waveguide 16. Therefore, the solid-state image pickup device 1 (1A) can be manufactured, which provides effects and advantages similar to those provided by the solid-state image pickup device of the first example in the first embodiment.

固態影像拾取裝置的第二例示性製造方法Second exemplary manufacturing method of solid-state image pickup device

接著，參照圖22至28說明根據本發明之第二實施例之固態影像拾取裝置之第二例示性製造方法。Next, a second exemplary manufacturing method of the solid-state image pickup device according to the second embodiment of the present invention will be described with reference to Figs.

參照圖22，以類似於第一例示性製造方法的方式於接線層13中形成波導孔19。然後，於波導孔19的內側形成用於第一波導16A的第一波導材料膜57。第一波導材料膜57亦形成於層間絕緣膜14上。第一波導材料膜57係由折射率高於層間絕緣膜14的折射率的材料製成。例如，第一波導材料膜57可為選擇自氮化物的材料製成。例如，此種膜可為氮化矽(SiN)膜或是氮氧化矽膜。又，若第一波導材料膜57係以氮化矽膜形成，則該膜作為鈍化膜。儘管第一波導材料膜57的材料並不限於選擇自氮化物的材料，但可使用具有高折射率，例如n=1.8的氮化矽膜。考慮膜厚度，例如側壁部位可具有大約100 nm的厚度。第一波導材料膜57的膜厚度較佳為決定為之後形成的第二波導可形成於第一波導16A之內。膜形成方法可為塗佈。當然，膜形成方法可為其他方法，例如化學氣相沉積。Referring to FIG. 22, a waveguide hole 19 is formed in the wiring layer 13 in a manner similar to the first exemplary manufacturing method. Then, a first waveguide material film 57 for the first waveguide 16A is formed inside the waveguide hole 19. The first waveguide material film 57 is also formed on the interlayer insulating film 14. The first waveguide material film 57 is made of a material having a refractive index higher than that of the interlayer insulating film 14. For example, the first waveguide material film 57 may be made of a material selected from nitride. For example, the film may be a tantalum nitride (SiN) film or a hafnium oxynitride film. Further, when the first waveguide material film 57 is formed of a tantalum nitride film, the film serves as a passivation film. Although the material of the first waveguide material film 57 is not limited to the material selected from the nitride, a tantalum nitride film having a high refractive index such as n = 1.8 may be used. Considering the film thickness, for example, the sidewall portion may have a thickness of about 100 nm. The film thickness of the first waveguide material film 57 is preferably determined such that a second waveguide formed later can be formed within the first waveguide 16A. The film formation method may be coating. Of course, the film formation method can be other methods such as chemical vapor deposition.

接著，參照圖23，其中形成有第一波導材料膜57的波導孔19被第二波導材料膜58填充，藉此可形成第二波導16B。第二波導材料膜58為折射率低於第一波導材料膜57之折射率的材料。例如，使用折射率大約為1.4的樹脂膜(例如，具有良好光穿透性的樹脂，例如PMMA)或是選擇自氧化矽材料製成的薄膜。波導材料膜53亦形成於層間絕緣膜14之上。上述之各波導材料膜可藉由塗佈、化學氣相沉積等而形成。在此方式中，由第一波導材料膜57製成的第一波導16A可形成於波導孔19的內側，且由第二波導材料膜58形成的第二波導16B可形成於第一波導16A的內側。Next, referring to Fig. 23, the waveguide hole 19 in which the first waveguide material film 57 is formed is filled with the second waveguide material film 58, whereby the second waveguide 16B can be formed. The second waveguide material film 58 is a material having a refractive index lower than that of the first waveguide material film 57. For example, a resin film having a refractive index of about 1.4 (for example, a resin having good light transmittance, such as PMMA) or a film made of a material selected from cerium oxide is used. A waveguide material film 53 is also formed over the interlayer insulating film 14. Each of the above waveguide material films can be formed by coating, chemical vapor deposition, or the like. In this manner, the first waveguide 16A made of the first waveguide material film 57 may be formed inside the waveguide hole 19, and the second waveguide 16B formed of the second waveguide material film 58 may be formed on the first waveguide 16A. Inside.

接著，參照圖24，形成用以平坦化第二波導材料膜58的表面的平坦絕緣膜54。平坦絕緣膜54為例如由樹脂層形成。Next, referring to FIG. 24, a flat insulating film 54 for planarizing the surface of the second waveguide material film 58 is formed. The flat insulating film 54 is formed of, for example, a resin layer.

接著，參照圖25，於平坦絕緣膜54之上形成彩色濾波層17。彩色濾波層17係由塗佈彩色濾波材料，然後透過曝光、顯影等圖案化而形成。彩色濾波層17使用例如紅色彩色濾波器、綠色彩色濾波器及藍色彩色濾波器，以對應於將由個別的光電轉換器12感測的顏色。彩色濾波層17的佈局亦接受瞳孔校正。Next, referring to FIG. 25, a color filter layer 17 is formed over the flat insulating film 54. The color filter layer 17 is formed by applying a color filter material and then patterning by exposure, development, or the like. The color filter layer 17 uses, for example, a red color filter, a green color filter, and a blue color filter to correspond to colors to be sensed by the individual photoelectric converters 12. The layout of the color filter layer 17 also accepts pupil correction.

接著，參照圖26，於彩色濾波層17上形成透鏡形成膜55。透鏡形成膜55為用於微透鏡(亦稱為晶片上透鏡)的材料。透鏡形成膜55係由例如透光樹脂膜形成。Next, referring to Fig. 26, a lens forming film 55 is formed on the color filter layer 17. The lens forming film 55 is a material for a microlens (also referred to as a lens on a wafer). The lens forming film 55 is formed of, for example, a light-transmitting resin film.

接著，參照圖27，於透鏡形成膜55上形成用於微透鏡的光阻圖案56。光阻圖案56的佈局接受瞳孔校正。然後，即使未顯示，鑄模光阻圖案56以使其具有透鏡形狀。然後，鑄模以具有透鏡形狀的光阻圖案56的形狀藉由回蝕刻而轉移到透鏡形成膜55。Next, referring to FIG. 27, a photoresist pattern 56 for a microlens is formed on the lens forming film 55. The layout of the photoresist pattern 56 accepts pupil correction. Then, even if not shown, the photoresist pattern 56 is molded to have a lens shape. Then, the mold is transferred to the lens forming film 55 by etch back in the shape of the photoresist pattern 56 having a lens shape.

因此，參照圖28，於透鏡形成膜55上形成微透鏡18。從第二波導材料膜58的表面到微透鏡18的底部部位的高度h1為例如1到3μm。又，從第二波導材料膜58的表面到彩色濾波層17的表面的高度h2為例如0.5到2.5μm。更進一步，從光電轉換器12的表面到波導16的入射光的光出口側的一端的高度h3為例如0.3到2μm。Therefore, referring to Fig. 28, a microlens 18 is formed on the lens forming film 55. The height h1 from the surface of the second waveguide material film 58 to the bottom portion of the microlens 18 is, for example, 1 to 3 μm. Further, the height h2 from the surface of the second waveguide material film 58 to the surface of the color filter layer 17 is, for example, 0.5 to 2.5 μm. Further, the height h3 of one end from the surface of the photoelectric converter 12 to the light exit side of the incident light of the waveguide 16 is, for example, 0.3 to 2 μm.

利用第二製造方法，形成波導16以使第二波導16B形成於第一波導16A之內，同時具有相對較高折射率的第一波導16A形成於第二波導16B的周圍。從第二波導16B進入第一波導16A的光線透過第一波導16A傳送，且係自其發射。With the second manufacturing method, the waveguide 16 is formed such that the second waveguide 16B is formed inside the first waveguide 16A, while the first waveguide 16A having a relatively high refractive index is formed around the second waveguide 16B. Light entering the first waveguide 16A from the second waveguide 16B is transmitted through the first waveguide 16A and is emitted therefrom.

因此，固態影像拾取裝置1(1B)可提供如第一實施例之第一範例所述之固態影像拾取裝置所提供的效用及優點。Therefore, the solid-state image pickup device 1 (1B) can provide the effects and advantages provided by the solid-state image pickup device as described in the first example of the first embodiment.

3.第三實施例3. Third Embodiment 影像拾取裝置之範例組構Example organization of image pickup device

接著，參照圖29說明根據本發明之第三實施例之影像拾取裝置之例示性組構。此影像拾取裝置使用根據本發明之實施例的固態影像拾取裝置。Next, an exemplary configuration of an image pickup apparatus according to a third embodiment of the present invention will be described with reference to FIG. This image pickup device uses a solid-state image pickup device according to an embodiment of the present invention.

參照圖29，影像拾取裝置200包含影像拾取單元及固態影像拾取裝置210。於影像拾取單元201的光聚集側設置光線聚集光學單元202。影像拾取單元201連接於信號處理單元203。信號處理單元203包含驅動電路，其驅動影像拾取單元201；及信號處理電路，其處理信號，該信號接受由固態影像拾取裝置210的光電轉換，以成為影像。由信號處理單元203處理的影像信號可儲存於影像儲存單元中(未顯示)。在此種影像拾取裝置200中，固態影像拾取裝置210可使用根據前述實施例所述之固態影像拾取裝置1。Referring to FIG. 29, the image pickup apparatus 200 includes an image pickup unit and a solid-state image pickup device 210. The light concentrating optical unit 202 is disposed on the light collecting side of the image pickup unit 201. The image pickup unit 201 is connected to the signal processing unit 203. The signal processing unit 203 includes a driving circuit that drives the image pickup unit 201, and a signal processing circuit that processes a signal that is subjected to photoelectric conversion by the solid-state image pickup device 210 to become an image. The image signal processed by the signal processing unit 203 can be stored in an image storage unit (not shown). In such an image pickup apparatus 200, the solid-state image pickup apparatus 210 can use the solid-state image pickup apparatus 1 according to the foregoing embodiment.

因為根據本實施例之影像拾取裝置200使用根據前述實施例之固態影像拾取裝置1，所以因為固態影像拾取裝置1中之波長的遮光而造成的色彩不均(彩色遮光)可被減少。可增加靈敏度，因此可獲得具有高品質的影像。Since the image pickup device 200 according to the present embodiment uses the solid-state image pickup device 1 according to the foregoing embodiment, color unevenness (color shading) due to shading of wavelengths in the solid-state image pickup device 1 can be reduced. Sensitivity can be increased, so that images with high quality can be obtained.

影像拾取裝置200可形成為一個晶片或是一個模組，其中封裝影像拾取單元及信號處理單元或是光學系統，因此具有影像拾取功能。影像拾取裝置200為例如相機或是具有影像拾取功能的移動裝置。又，「影像拾取」不僅包含獲得在相機正常拍攝期間的影像，廣義而言，亦包含偵測指紋等。The image pickup device 200 can be formed as a wafer or a module in which the image pickup unit and the signal processing unit or the optical system are packaged, thereby having an image pickup function. The image pickup device 200 is, for example, a camera or a mobile device having an image pickup function. Moreover, "image pickup" includes not only obtaining images during normal shooting of the camera, but also detecting fingerprints in a broad sense.

4.第四實施例4. Fourth Embodiment 固態影像拾取裝置的例示性組構Exemplary organization of solid-state image pickup device

圖30至32各顯示根據本發明之第四實施例之一固態影像拾取裝置。本實施例之固態影像拾取裝置為四像素共用類型的MOS固態影像拾取裝置，其中四個像素共用一個浮動擴散、一個放大器電晶體及一個選擇電晶體。圖30為顯示像素部位的平面圖，其中四像素共用類型的多數個單位像素群集為二維排列。圖31A及31B為顯示像素部位的角範圍的中心的單位像素群集及在像素部位的角範圍的邊緣的像素群集的單位像素群集的平面圖。圖32為沿著圖31A的直線XXXII-XXXII索取的橫剖面圖。30 to 32 each show a solid-state image pickup device according to a fourth embodiment of the present invention. The solid-state image pickup device of this embodiment is a four-pixel sharing type MOS solid-state image pickup device in which four pixels share one floating diffusion, one amplifier transistor, and one selection transistor. Figure 30 is a plan view showing a pixel portion in which a plurality of unit pixel clusters of a four-pixel sharing type are two-dimensionally arranged. 31A and 31B are plan views showing a cluster of unit pixels showing the center of the angular range of the pixel portion and a cluster of unit pixels of the pixel cluster at the edge of the angular range of the pixel portion. Figure 32 is a cross-sectional view taken along line XXXII-XXXII of Figure 31A.

以下，參考標號40標示像素部位，38標示固態影像拾取裝置，42標示單位像素群集，PD(PD1到PD4)標示光電轉換器，Tr11到Tr14、Tr2、Tr3及Tr4標示像素電晶體，43標示轉換閘極，48標示重設閘極，49標示放大器閘極，151標示選擇閘極，152標示波導，154標示層間絕緣膜，155標示接線部位，155a標示突出部位，150標示接線層，157標示彩色濾波層，158標示微透鏡，且L標示入射光。Hereinafter, reference numeral 40 denotes a pixel portion, 38 denotes a solid-state image pickup device, 42 denotes a unit pixel cluster, PD (PD1 to PD4) denotes a photoelectric converter, Tr11 to Tr14, Tr2, Tr3 and Tr4 denote a pixel transistor, and 43 denotes a conversion Gate, 48 indicates reset gate, 49 indicates amplifier gate, 151 indicates selection gate, 152 indicates waveguide, 154 indicates interlayer insulation film, 155 indicates wiring part, 155a indicates protruding part, 150 indicates wiring layer, 157 indicates color The filter layer, 158 indicates the microlens, and L indicates the incident light.

首先，為了便於了解第四實施例，參照圖62及63說明未改善之前的比較性範例。此比較性範例為四像素共用類型的MOS固態影像拾取裝置，其中四個像素共用一個浮動擴散、一個放大器電晶體、及一個選擇電晶體。比較性範例的MOS固態影像拾取裝置113包含像素部位，其中多數個單位像素群集排列成陣列。在各個單位像素群集中，多數個像素共用單一個像素電晶體。特別而言，MOS固態影像拾取裝置113包含四像素共用類型的單位像素群集114，其中作為光電轉換器的四個光二極體PD共用單一個像素電晶體單元。更明確而言，單位像素群集114包含四個光二極體PD(PD1到PD4)、四個轉換電晶體Tr(Tr11到Tr14)及單一個浮動擴散FD。更進一步，單位像素群集114包含單一個蟲設電晶體Tr2、一個放大器電晶體Tr3、一個選擇電晶體Tr4。由聚合矽製成的轉換閘極115設置於位於單位像素群集114的中心的浮動擴散FD與光二極體PD1到PD4之間。因此，形成用於四個光二極體PD的四個轉換電晶體Tr11到Tr14。First, in order to facilitate understanding of the fourth embodiment, a comparative example before the improvement is explained with reference to Figs. 62 and 63. This comparative example is a four-pixel sharing type MOS solid-state image pickup device in which four pixels share a floating diffusion, an amplifier transistor, and a selection transistor. The MOS solid-state image pickup device 113 of the comparative example includes a pixel portion in which a plurality of unit pixel clusters are arranged in an array. In each unit pixel cluster, a plurality of pixels share a single pixel transistor. In particular, the MOS solid-state image pickup device 113 includes a unit pixel cluster 114 of a four-pixel sharing type in which four photodiodes PD as a photoelectric converter share a single pixel transistor unit. More specifically, the unit pixel cluster 114 includes four photodiodes PD (PD1 to PD4), four conversion transistors Tr (Tr11 to Tr14), and a single floating diffusion FD. Further, the unit pixel cluster 114 includes a single worm transistor Tr2, an amplifier transistor Tr3, and a selection transistor Tr4. A switching gate 115 made of a polymer germanium is disposed between the floating diffusion FD and the photodiodes PD1 to PD4 located at the center of the unit pixel cluster 114. Therefore, four conversion transistors Tr11 to Tr14 for the four photodiodes PD are formed.

重設電晶體Tr2、放大器電晶體Tr3及選擇電晶體Tr4係連續水平設置於光二極體PD1到PD4之下。重設電晶體Tr2包含擴散區域116、擴散區域117及重設閘極120。放大器電晶體Tr3包含擴散區域117、擴散區域118及放大器閘極121。選擇電晶體Tr4包含擴散區域118、擴散區域119及選擇閘極122。在單位像素群集114中，包含由聚合矽製成的閘極的基層相對於相鄰的像素的邊界具有不對稱配置。特別而言，包含重設電晶體Tr2、放大器電晶體Tr3、及選擇電晶體Tr4的像素電晶體相對於像素Gb及R，及像素Gr及B之間的邊界為不對稱配置。又，像素Gr、R、Gb及B的轉換閘極115相對於像素Gr、R、Gb及B之間的邊界為不對稱配置。The reset transistor Tr2, the amplifier transistor Tr3, and the selection transistor Tr4 are continuously horizontally disposed under the photodiodes PD1 to PD4. The reset transistor Tr2 includes a diffusion region 116, a diffusion region 117, and a reset gate 120. The amplifier transistor Tr3 includes a diffusion region 117, a diffusion region 118, and an amplifier gate 121. The selection transistor Tr4 includes a diffusion region 118, a diffusion region 119, and a selection gate 122. In the unit pixel cluster 114, the base layer including the gates made of the polymer germanium has an asymmetric configuration with respect to the boundaries of adjacent pixels. In particular, the pixel transistor including the reset transistor Tr2, the amplifier transistor Tr3, and the selection transistor Tr4 is asymmetrically arranged with respect to the pixels Gb and R, and the boundary between the pixels Gr and B. Further, the switching gates 115 of the pixels Gr, R, Gb, and B are asymmetrically arranged with respect to the boundary between the pixels Gr, R, Gb, and B.

對於光二極體PD1到PD4分別形成波導23。在此範例中，使用Bayer圖案彩色濾波層。在此層中，重複設置四像素共用類型的多數個單位像素群集114，其中四個像素共用一個浮動擴散、一個放大器電晶體及一個選擇電晶體。各個單位像素群集114包含一個紅色像素R、一個第一綠色像素Gb、一個藍色像素B、及一個第二綠色像素Gr。A waveguide 23 is formed for each of the photodiodes PD1 to PD4. In this example, a Bayer pattern color filter layer is used. In this layer, a plurality of unit pixel clusters 114 of a four-pixel sharing type are repeatedly arranged, wherein four pixels share a floating diffusion, an amplifier transistor, and a selection transistor. Each unit pixel cluster 114 includes a red pixel R, a first green pixel Gb, a blue pixel B, and a second green pixel Gr.

圖63為沿著圖62的通過第二像素Gr的直線LXIII-LXIII所取的橫剖面圖。參照圖64，作為光電轉換器的光二極體PD4形成於半導體基板24的表面上，且包含接線部位26的多數層形成於半導體基板24之上，有一層間絕緣膜25夾設於其之間。波導23形成於光二極體PD4之上，以使波導23嵌入於層間絕緣膜25之內。彩色濾波層28形成於波導23之上。微透鏡29(亦稱為晶片上透鏡)形成於彩色濾波層28之上。又，放大器閘極121形成於靠近光二極體PD4。閘極絕緣膜27設置於放大器閘極121與光二極體PD4之間。Fig. 63 is a cross-sectional view taken along line LXIII-LXIII of Fig. 62 passing through the second pixel Gr. Referring to Fig. 64, a photodiode PD4 as a photoelectric converter is formed on the surface of the semiconductor substrate 24, and a plurality of layers including the wiring portion 26 are formed on the semiconductor substrate 24 with an interlayer insulating film 25 interposed therebetween. The waveguide 23 is formed on the photodiode PD4 so that the waveguide 23 is embedded in the interlayer insulating film 25. A color filter layer 28 is formed over the waveguide 23. Microlenses 29 (also referred to as on-wafer lenses) are formed over color filter layer 28. Further, the amplifier gate 121 is formed close to the photodiode PD4. The gate insulating film 27 is provided between the amplifier gate 121 and the photodiode PD4.

在比較性範例之固態影像拾取裝置113中，入射光L透過微透鏡29及波導23傳送，且係入射至各個像素的光二極體PD。此時，在第二綠色像素Gr中，透過波導23傳送的部份的入射光L被設置於接近第二綠色像素Gr且具有大閘極長度的放大器閘極121遮蔽，如圖62及63中的圓圈c所示。在第一綠色像素Gb中，透過波導23傳送的入射光L為入射至光二極體PD1之上，而不受重設閘極120或是放大器閘極121的影響。因此，如圖64之波長及輸出圖所示，第二綠色像素Gr的靈敏度(見曲線r1)低於第一綠色像素Gb的靈敏度(見曲線b1)。因此，綠色像素Gr及Gb之間出現靈敏度差異。In the solid-state image pickup device 113 of the comparative example, the incident light L is transmitted through the microlens 29 and the waveguide 23, and is incident on the photodiode PD of each pixel. At this time, in the second green pixel Gr, a portion of the incident light L transmitted through the waveguide 23 is shielded from the amplifier gate 121 having a large gate length close to the second green pixel Gr, as shown in FIGS. 62 and 63. The circle c is shown. In the first green pixel Gb, the incident light L transmitted through the waveguide 23 is incident on the photodiode PD1 without being affected by the reset gate 120 or the amplifier gate 121. Therefore, as shown in the wavelength of Fig. 64 and the output diagram, the sensitivity of the second green pixel Gr (see curve r1) is lower than the sensitivity of the first green pixel Gb (see curve b1). Therefore, a sensitivity difference occurs between the green pixels Gr and Gb.

相比之下，根據第四實施例之固態影像拾取裝置可控制靈敏度，以使第一及第二綠色像素Gb及Gr的靈敏度在四像素共用類型的單位像素群集內為相等，其中四個像素共用一個浮動擴散、一個放大器電晶體及一個選擇電晶體。In contrast, the solid-state image pickup device according to the fourth embodiment can control the sensitivity such that the sensitivity of the first and second green pixels Gb and Gr is equal within a unit pixel cluster of a four-pixel sharing type, wherein four pixels A floating diffusion, an amplifier transistor, and a selection transistor are shared.

參照圖31，根據第四實施例之固態影像拾取裝置38包含像素部位，其中多數個單位像素群集42排列成陣列。在各個單位像素群集42中，多數個像素共用單一個像素電晶體。特別而言，固態影像拾取裝置38包含四像素共用類型的單位像素群集42，其中四個像素共用一個浮動擴散、一個放大器電晶體、及一個選擇電晶體，其中作為光電轉換器的四個光二極體PD共用單一個像素電晶體單元。更明確而言，單位像素群集42包含四個光二極體PD(PD1到PD4)、四個轉換電晶體Tr(Tr11到Tr14)及單一個浮動擴散FD。更進一步，單位像素群集42包含單一個重設電晶體Tr2、一個放大器電晶體Tr3、一個選擇電晶體Tr4。浮動擴散FD設置於2×2陣列的四個光二極體PD1到PD4的中心。由聚合矽形成的閘極43設置於浮動擴散FD與光二極體PD1至PD4之間。因此，形成用於四個光二極體PD的四個轉換電晶體Tr11到Tr14。Referring to Fig. 31, the solid-state image pickup device 38 according to the fourth embodiment includes pixel portions in which a plurality of unit pixel clusters 42 are arranged in an array. In each unit pixel cluster 42, a plurality of pixels share a single pixel transistor. In particular, the solid-state image pickup device 38 includes a unit pixel cluster 42 of a four-pixel sharing type in which four pixels share a floating diffusion, an amplifier transistor, and a selection transistor, wherein four photodiodes are used as photoelectric converters. The body PDs share a single pixel transistor unit. More specifically, the unit pixel cluster 42 includes four photodiodes PD (PD1 to PD4), four conversion transistors Tr (Tr11 to Tr14), and a single floating diffusion FD. Further, the unit pixel cluster 42 includes a single reset transistor Tr2, an amplifier transistor Tr3, and a selection transistor Tr4. The floating diffusion FD is disposed at the center of the four photodiodes PD1 to PD4 of the 2 × 2 array. A gate electrode 43 formed of a polymerized germanium is disposed between the floating diffusion FD and the photodiodes PD1 to PD4. Therefore, four conversion transistors Tr11 to Tr14 for the four photodiodes PD are formed.

重設電晶體Tr2、放大器電晶體Tr3、選擇電晶體Tr4為連續水平地設置於四個光二極體PD1到PD4之下。重設電晶體Tr2包含擴散區域44、擴散區域45、重設閘極48。放大器電晶體Tr3包含擴散區域45、擴散區域46、放大器閘極49。選擇電晶體Tr4包含擴散區域46、擴散區域47、選擇閘極151。The reset transistor Tr2, the amplifier transistor Tr3, and the selection transistor Tr4 are continuously horizontally disposed under the four photodiodes PD1 to PD4. The reset transistor Tr2 includes a diffusion region 44, a diffusion region 45, and a reset gate 48. The amplifier transistor Tr3 includes a diffusion region 45, a diffusion region 46, and an amplifier gate 49. The selection transistor Tr4 includes a diffusion region 46, a diffusion region 47, and a selection gate 151.

分別對於光二極體PD1到PD4形成波導152。在此實施例中，彩色濾波層157使用示於圖60之Bayer圖案彩色濾波器101。因此，在此實施例中，參照圖30，重複排列四像素共用類型的多數個單位像素群集42，其中四個像素共用一個浮動擴散、一個放大器電晶體及一個選擇電晶體，藉此形成像素部位40。各個單位像素群集42包含紅色像素R、第一綠色像素Gb、藍色像素B、及第二綠色像素Gr。The waveguide 152 is formed for the photodiodes PD1 to PD4, respectively. In this embodiment, the color filter layer 157 uses the Bayer pattern color filter 101 shown in FIG. Therefore, in this embodiment, referring to FIG. 30, a plurality of unit pixel clusters 42 of a four-pixel sharing type are repeatedly arranged, wherein four pixels share a floating diffusion, an amplifier transistor, and a selection transistor, thereby forming a pixel portion. 40. Each unit pixel cluster 42 includes a red pixel R, a first green pixel Gb, a blue pixel B, and a second green pixel Gr.

像素R、Gb、B及Gr具有類似於圖32所示的基本結構。特別而言，像素R、Gb、B及Gr的半導體基板153的表面上各具有作為光電轉換器的光二極體PD。接線層150形成於半導體基板153上。在接線層150中，設置包含接線部位155的多數層並使層間絕緣膜154夾設於其之間除了光二極體PD之上以外的區域中。波導152形成於光二極體PD之上，以使波導152嵌入層間絕緣膜154中。波導152引導入射光至光二極體PD。層間絕緣膜154的表面被平坦化。於平坦化的表面上形成用以分離入射光以對應於波導152之彩色濾波層157。於彩色濾波層157之上形成微透鏡158(亦稱為晶片上透鏡)。形成由聚合矽製成的像素電晶體的閘極43、48、49及151，並使閘絕緣膜131夾設於其之間。參照圖32之橫剖面圖，放大器閘極49形成於接近光二極體PD4之處。閘極絕緣膜131設置於放大器閘極121與光二極體PD4之間。The pixels R, Gb, B, and Gr have a basic structure similar to that shown in FIG. In particular, the semiconductor substrate 153 of the pixels R, Gb, B, and Gr each has a photodiode PD as a photoelectric converter. The wiring layer 150 is formed on the semiconductor substrate 153. In the wiring layer 150, a plurality of layers including the wiring portion 155 are provided and the interlayer insulating film 154 is interposed therebetween in a region other than above the photodiode PD. The waveguide 152 is formed over the photodiode PD such that the waveguide 152 is embedded in the interlayer insulating film 154. The waveguide 152 directs incident light to the photodiode PD. The surface of the interlayer insulating film 154 is planarized. A color filter layer 157 for separating incident light to correspond to the waveguide 152 is formed on the planarized surface. A microlens 158 (also referred to as an on-wafer lens) is formed over the color filter layer 157. Gates 43, 48, 49, and 151 of a pixel transistor made of a polymerized germanium are formed, and the gate insulating film 131 is interposed therebetween. Referring to the cross-sectional view of Fig. 32, the amplifier gate 49 is formed close to the photodiode PD4. The gate insulating film 131 is provided between the amplifier gate 121 and the photodiode PD4.

形成以對應於光二極體PD的波導152具有圓柱形本體，其之橫剖面從光入射側的一端到光出口側的一端為恆定。舉例而言，圓柱形本體可為圓柱體或是卵形柱體(包含橢圓柱體)。波導152的直徑(寬度)小於光二極體PD的寬度及用於光二極體PD的接線部位155的開口寬度，以使可藉由稍後說明之位移而調整波導152。波導152具有漸細的圓柱形狀，其之橫剖面從光入射側的一端到光出口側的一端漸減。The waveguide 152 formed to correspond to the photodiode PD has a cylindrical body whose cross section is constant from one end on the light incident side to one end on the light exit side. For example, the cylindrical body can be a cylinder or an oval cylinder (including an elliptical cylinder). The diameter (width) of the waveguide 152 is smaller than the width of the photodiode PD and the opening width of the wiring portion 155 for the photodiode PD, so that the waveguide 152 can be adjusted by displacement explained later. The waveguide 152 has a tapered cylindrical shape whose cross section gradually decreases from one end on the light incident side to one end on the light exit side.

在單位像素群集42中，設置於光入射表面之下的基層具有不對稱配置。在此實施例中，包含轉換閘極43且係形成於波導152之下的基層相對於相鄰像素Gr、R、Gb及B之間的邊界具有不對稱配置。也就是說，像素Gr、R、Gb及B的轉換閘極43於單位像素群集42中係為不對稱配置。又，在單位像素群集42中，包含重設電晶體Tr2、放大器電晶體Tr3、及選擇電晶體Tr4的像素電晶體單元相對於像素Gb、R及像素Gr及B之間的邊界為不對稱配置。In the unit pixel cluster 42, the base layer disposed under the light incident surface has an asymmetrical configuration. In this embodiment, the base layer including the switching gate 43 and formed under the waveguide 152 has an asymmetrical configuration with respect to the boundary between the adjacent pixels Gr, R, Gb, and B. That is, the switching gates 43 of the pixels Gr, R, Gb, and B are asymmetrically arranged in the unit pixel cluster 42. Further, in the unit pixel cluster 42, the pixel transistor unit including the reset transistor Tr2, the amplifier transistor Tr3, and the selection transistor Tr4 is asymmetrically arranged with respect to the boundary between the pixels Gb, R and the pixels Gr and B. .

在藉由位移而調整預定像素的波導152之前的狀態中(等效於圖62之比較性範例的狀態)，以規則的間隔在像素部位40的整個區域中設置波導152，且光二極體PD與波導152之間的位置關係在整個像素部位40中為相同。舉例而言，一種情況是光二極體PD的中心稍微偏離波導152的中央軸，一種情況是光二極體PD的中心對準波導152的中央軸。無論是在何種情況中，光二極體PD的中心與波導152之間的位置關係在整個像素部位40中為相同。In a state before the waveguide 152 of the predetermined pixel is adjusted by the displacement (equivalent to the state of the comparative example of FIG. 62), the waveguide 152 is disposed in the entire region of the pixel portion 40 at regular intervals, and the photodiode PD The positional relationship with the waveguide 152 is the same throughout the pixel portion 40. For example, one case is where the center of the photodiode PD is slightly offset from the central axis of the waveguide 152, in which case the center of the photodiode PD is aligned with the central axis of the waveguide 152. In either case, the positional relationship between the center of the photodiode PD and the waveguide 152 is the same throughout the pixel portion 40.

各個色彩的彩色濾波層157及微透鏡158可接受瞳孔校正或是不接受瞳孔校正。若對於彩色濾波層157及微透鏡158實施瞳孔校正，則實施瞳孔校正以使彩色濾波層157的中心或是微透鏡158相對於光二極體PD的位移量從像素部位40的中心朝向周圍而漸大。The color filter layer 157 and the microlens 158 of the respective colors can accept pupil correction or do not accept pupil correction. If pupil correction is performed on the color filter layer 157 and the microlens 158, pupil correction is performed such that the center of the color filter layer 157 or the displacement amount of the microlens 158 with respect to the photodiode PD is gradually changed from the center of the pixel portion 40 toward the periphery. Big.

在此實施例中，波導152作為調整機構，以獲得單位像素群集42中之光二極體PD的光學對稱。在此實施例中，第二綠色像素Gr的波導152自參考位置遠離放大器閘極49，像素的波導152在參考位置係以規則間隔設置於像素部位40的整個區域中。在此情況中，決定位移的調整方向及調整量以使第二綠色像素Gr的靈敏度等於第一綠色像素Gb的靈敏度。在此實施例中，第二綠色像素Gr的波導152移動至傾斜左上側，如圖31A及31B中之箭頭B所示，使初始狀態或是參考狀態的距離d1(參見圖62之比較性範例)成為大於距離d1的距離d2。在包含位於角範圍的邊緣的波導152的整個像素部位中，第二綠色像素Gr的波導152的位移調整方向(位移方向)及調整量(位移量)皆相等。其它紅色像素R、藍色像素B及第一綠色像素Gb的波導152的位置並未從初始狀態改變。In this embodiment, the waveguide 152 acts as an adjustment mechanism to obtain optical symmetry of the photodiode PD in the unit pixel cluster 42. In this embodiment, the waveguide 152 of the second green pixel Gr is away from the amplifier gate 49 from the reference position, and the waveguide 152 of the pixel is disposed at a regular interval in the entire area of the pixel portion 40 at the reference position. In this case, the adjustment direction of the displacement and the adjustment amount are determined such that the sensitivity of the second green pixel Gr is equal to the sensitivity of the first green pixel Gb. In this embodiment, the waveguide 152 of the second green pixel Gr is moved to the upper left side of the tilt, as shown by the arrow B in FIGS. 31A and 31B, and the distance d1 of the initial state or the reference state is made (see the comparative example of FIG. 62). ) becomes a distance d2 greater than the distance d1. In the entire pixel portion including the waveguide 152 located at the edge of the angular range, the displacement adjustment direction (displacement direction) and the adjustment amount (displacement amount) of the waveguide 152 of the second green pixel Gr are equal. The positions of the other red pixel R, the blue pixel B, and the waveguide 152 of the first green pixel Gb are not changed from the initial state.

因此，四像素共用類型(其中四個像素共用一個浮動擴散、一個放大器電晶體及一個選擇電晶體)的單位像素群集42的第二綠色像素Gr的波導152相對於第二綠色像素Gr及其他紅色像素R、藍色像素B、及第一綠色像素Gb之間的邊界為不對稱於其他紅色像素R、藍色像素B、及第一綠色像素Gb的波導152。Therefore, the waveguide 152 of the second green pixel Gr of the unit pixel cluster 42 of the four-pixel sharing type (four pixels sharing one floating diffusion, one amplifier transistor and one selection transistor) is opposite to the second green pixel Gr and other red The boundary between the pixel R, the blue pixel B, and the first green pixel Gb is a waveguide 152 that is asymmetric with respect to the other red pixel R, the blue pixel B, and the first green pixel Gb.

預先提供曝光遮罩中的單位像素群集42的波導152的整體佈局，以供形成預期第二綠色像素Gr的波導152的位移位置的波導152。因此，藉由使用曝光遮罩，比起其他像素Gb、R及B的波導152，可形成其中只有第二綠色像素Gr的波導152刻意在單位像素群集42中以預定方向位移預定距離。The overall layout of the waveguide 152 of the unit pixel cluster 42 in the exposure mask is provided in advance for the waveguide 152 that forms the displacement position of the waveguide 152 of the intended second green pixel Gr. Therefore, by using the exposure mask, the waveguide 152 in which only the second green pixel Gr is formed is intentionally displaced in the unit pixel cluster 42 by a predetermined distance in a predetermined direction, compared to the waveguides 152 of the other pixels Gb, R, and B.

利用根據第四實施例的固態影像拾取裝置38，只有第二綠色像素Gr的波導152刻意偏離基層中由聚合矽製成的放大器閘極49。因此，可避免入射光L被放大器閘極49遮住。因此，可以減少或是消除第一及第二綠色像素Gb及Gr之間的靈敏度差異，且因此能獲得綠色像素Gb及Gr之間的光學對稱。參照圖33所繪示的波長及輸出的曲線r2及b2，第一及第二綠色像素Gb及Gr的靈敏度相等。因此，藉由減少第一及第二綠色像素Gb及Gr之間的靈敏度差異，雜訊(例如格柵雜訊)可減少，且可提供具有高影像品質的固態影像拾取裝置。With the solid-state image pickup device 38 according to the fourth embodiment, only the waveguide 152 of the second green pixel Gr is deliberately deviated from the amplifier gate 49 made of polymerized germanium in the base layer. Therefore, the incident light L can be prevented from being blocked by the amplifier gate 49. Therefore, the sensitivity difference between the first and second green pixels Gb and Gr can be reduced or eliminated, and thus optical symmetry between the green pixels Gb and Gr can be obtained. Referring to the wavelengths and output curves r2 and b2 shown in FIG. 33, the first and second green pixels Gb and Gr have the same sensitivity. Therefore, by reducing the sensitivity difference between the first and second green pixels Gb and Gr, noise (for example, grid noise) can be reduced, and a solid-state image pickup device having high image quality can be provided.

5.第五實施例5. Fifth embodiment 固態影像拾取裝置的例示性組構Exemplary organization of solid-state image pickup device

圖34A及34B各顯示一種根據本發明之第五實施例之固態影像拾取裝置。此實施例之固態影像拾取裝置為四像素共用類型的MOS固態影像拾取裝置，其中四個像素共用一個浮動擴散、一個放大器電晶體及一個選擇電晶體。圖34A、34B為顯示在角範圍的中心的單位像素群集及在像素部位的角範圍的邊緣的單位像素群集。34A and 34B each show a solid-state image pickup device according to a fifth embodiment of the present invention. The solid-state image pickup device of this embodiment is a four-pixel sharing type MOS solid-state image pickup device in which four pixels share a floating diffusion, an amplifier transistor, and a selection transistor. 34A and 34B are unit pixel clusters showing a cluster of unit pixels at the center of the angular range and edges at angular ranges of the pixel portion.

基於距離對應於光二極體PD的接線部位155的開口寬度的餘地而決定做為波導152調整量的位移量。因此，位移量受限。因為此限制，即使第二綠色像素Gr的波導152位移，仍可能無法減少第一及第二綠色像素Gb及Gr之間的靈敏度差異。第五實施例則改善此點。The amount of displacement as the adjustment amount of the waveguide 152 is determined based on the distance from the opening width corresponding to the wiring portion 155 of the photodiode PD. Therefore, the amount of displacement is limited. Because of this limitation, even if the waveguide 152 of the second green pixel Gr is displaced, the sensitivity difference between the first and second green pixels Gb and Gr may not be reduced. The fifth embodiment improves this point.

在根據第五實施例的固態影像拾取裝置161中，類似於第四實施例，第二綠色像素Gr的波導152位移朝向傾斜右上側，離開放大器閘極49一段預定距離，如圖34A及34B的箭頭所示。同時，第一綠色像素Gb的波導152朝向圖34A及34B的箭頭C所示的傾斜右上側位移，以更接近重設閘極48一段預定距離d3。單位像素群集42中的波導152的佈局在整個像素部位40中為相同。在此實施例中，第一綠色像素Gb的波導152以與第二像素Gr的位移方向相同的方向位移，如箭頭C所示。第一及第二綠色像素Gb及Gr的位移方向不限於此。取決於像素電晶體Tr11到Tr14的佈局而決定最佳方向。In the solid-state image pickup device 161 according to the fifth embodiment, similarly to the fourth embodiment, the waveguide 152 of the second green pixel Gr is displaced toward the upper right side of the tilt, away from the amplifier gate 49 by a predetermined distance, as shown in FIGS. 34A and 34B. The arrow shows. At the same time, the waveguide 152 of the first green pixel Gb is displaced toward the upper right side of the tilt shown by the arrow C of FIGS. 34A and 34B to be closer to the reset gate 48 by a predetermined distance d3. The layout of the waveguides 152 in the unit pixel cluster 42 is the same throughout the pixel portion 40. In this embodiment, the waveguide 152 of the first green pixel Gb is displaced in the same direction as the displacement direction of the second pixel Gr, as indicated by an arrow C. The displacement directions of the first and second green pixels Gb and Gr are not limited thereto. The optimum direction is determined depending on the layout of the pixel transistors Tr11 to Tr14.

其他組構類似於根據第四實施例所述者。相似的參考標號指的是圖31A及31B中的相似者。Other configurations are similar to those described in accordance with the fourth embodiment. Like reference numerals refer to like numerals in FIGS. 31A and 31B.

利用根據第五實施例之固態影像拾取裝置161，藉由移動第二綠色像素Gr之波導152離開基層中的放大器閘極49第二而增加第二綠色像素Gr的靈敏度，並藉由移動第一綠色像素Gb之波導152朝向基層中的重設閘極48而刻意減少第一綠色像素Gb的靈敏度。因此，對於第一及第二綠色像素Gb及Gr可能獲得光學對稱。亦即，可更減少或是消除第一及第二綠色像素Gb及Gr之間的靈敏度差異。兩個綠色像素Gb及Gr的靈敏度可為相等。因此，藉由減少第一及第二綠色像素Gb及Gr之間的靈敏度差異，可減少雜訊(例如格柵雜訊)並可提供具有高影像品質的固態影像拾取裝置。With the solid-state image pickup device 161 according to the fifth embodiment, the sensitivity of the second green pixel Gr is increased by moving the waveguide 152 of the second green pixel Gr away from the amplifier gate 49 in the base layer, and by moving the first The waveguide 152 of the green pixel Gb deliberately reduces the sensitivity of the first green pixel Gb toward the reset gate 48 in the base layer. Therefore, optical symmetry may be obtained for the first and second green pixels Gb and Gr. That is, the sensitivity difference between the first and second green pixels Gb and Gr can be further reduced or eliminated. The sensitivity of the two green pixels Gb and Gr can be equal. Therefore, by reducing the difference in sensitivity between the first and second green pixels Gb and Gr, noise (for example, grid noise) can be reduced and a solid-state image pickup device with high image quality can be provided.

6.第六實施例6. Sixth embodiment 固態影像拾取裝置的例示性組構Exemplary organization of solid-state image pickup device

圖35、36A及36B各顯示根據本發明之第六實施例的一種固態影像拾取裝置。本實施例之固態影像拾取裝置為四像素共用類型的MOS固態影像拾取裝置，其中四個像素共用一個浮動擴散、一個放大器電晶體及一個選擇電晶體。圖35為顯示根據第六實施例之最後狀態中的單位像素群集。圖36A及36B為顯示在角範圍的中心的單位像素群集及在像素部位的角範圍的邊緣的單位像素群集的概略平面圖，以提供對於傾斜入射光之改善。35, 36A and 36B each show a solid-state image pickup device according to a sixth embodiment of the present invention. The solid-state image pickup device of this embodiment is a four-pixel sharing type MOS solid-state image pickup device in which four pixels share one floating diffusion, one amplifier transistor, and one selection transistor. Fig. 35 is a diagram showing a unit pixel cluster in the last state according to the sixth embodiment. 36A and 36B are schematic plan views showing a cluster of unit pixels at the center of the angular range and a cluster of unit pixels at the edges of the angular extent of the pixel portion to provide an improvement in oblique incident light.

除了可控制綠色像素Gb及Gr之間的靈敏度差異之外，根據第六實施例之固態影像拾取裝置可提供彩色遮光控制。The solid-state image pickup device according to the sixth embodiment can provide color shading control in addition to the sensitivity difference between the green pixels Gb and Gr.

首先，為了便於了解第六實施例，參照圖65A及65B說明改善之前的比較性範例。圖65A及65B中之比較性範例類似於上述之圖62所示的比較性範例。相似的參考標號指的是相似的元件。如圖65A所示，在角範圍的中心，入射光L係以垂直於圖紙的方向入射(在圖中，為了方便說明，入射光L從上方進入下方)。像素R、Gr、Gb及B的波導23係設置於靠近對應的轉換閘極115。因此，如圓圈f所示，透過波導23傳送的部份入射光L可能被轉換閘極115遮住。相比之下，如圖65B所示，在角範圍的邊緣(在圖中，以左邊邊緣的像素部位作為範例)，入射光L從右方斜向地進入左方。因為光二極體PD1及PD2被轉換閘極115遮住，如圓圈g所示，因此入射於第一綠色像素Gb及紅色像素R的部份入射光L被轉換閘極115遮住。如圓圈f所示，入射於第二綠色像素Gr及藍色像素B的入射光亦有可能被轉換閘極115遮住。又，在角範圍的中心及邊緣，第二綠色像素Gr及藍色像素B的波導23係設置於接近放大器閘極121之處。如圓圈e所示，部份入射光L被放大器閘極121遮住。因此，第一及第二綠色像素Gb及Gr之間產生靈敏度差異，且出現彩色遮光。First, in order to facilitate understanding of the sixth embodiment, a comparative example before improvement will be described with reference to Figs. 65A and 65B. The comparative example in Figures 65A and 65B is similar to the comparative example shown in Figure 62 above. Like reference numerals refer to like elements. As shown in Fig. 65A, at the center of the angular range, the incident light L is incident in a direction perpendicular to the drawing (in the figure, the incident light L enters downward from above for convenience of explanation). The waveguides 23 of the pixels R, Gr, Gb, and B are disposed close to the corresponding switching gates 115. Therefore, as indicated by the circle f, part of the incident light L transmitted through the waveguide 23 may be blocked by the switching gate 115. In contrast, as shown in FIG. 65B, at the edge of the angular range (in the figure, the pixel portion of the left edge is taken as an example), the incident light L enters the left obliquely from the right. Since the photodiodes PD1 and PD2 are blocked by the switching gate 115, as indicated by a circle g, a portion of the incident light L incident on the first green pixel Gb and the red pixel R is blocked by the switching gate 115. As indicated by the circle f, incident light incident on the second green pixel Gr and the blue pixel B may also be blocked by the switching gate 115. Further, at the center and the edge of the angular range, the waveguides 23 of the second green pixel Gr and the blue pixel B are disposed close to the amplifier gate 121. As indicated by the circle e, part of the incident light L is blocked by the amplifier gate 121. Therefore, a sensitivity difference is generated between the first and second green pixels Gb and Gr, and color shading occurs.

利用根據第六實施例之固態影像拾取裝置63，如圖36A所示之角範圍的中心及圖36B所示之角範圍的邊緣，單位像素群集42中之像素R、Gr、Gb及B的波導152以水平方向位移離開個別的轉換閘極43，如箭頭X所示。因此，在像素R、Gr、Gb及B中，角範圍中心的斜向入射光L及部分垂直入射光L難以被轉換閘極43遮住。因此，可減少或是消除轉換閘極43造成的入射光L的遮光。With the solid-state image pickup device 63 according to the sixth embodiment, the center of the angular range shown in FIG. 36A and the edge of the angular range shown in FIG. 36B, the waveguides of the pixels R, Gr, Gb, and B in the unit pixel cluster 42 are used. 152 is displaced horizontally away from the individual switching gates 43, as indicated by arrow X. Therefore, among the pixels R, Gr, Gb, and B, the oblique incident light L and the partially perpendicular incident light L at the center of the angular range are hardly blocked by the switching gate 43. Therefore, the shading of the incident light L caused by the switching gate 43 can be reduced or eliminated.

又，類似於根據第四實施例之說明，第二綠色像素Gr的波導152位移離開放大器閘極49，且藍色像素B的波導152位移離開放大器閘極159。Again, similar to the description of the fourth embodiment, the waveguide 152 of the second green pixel Gr is displaced away from the amplifier gate 49, and the waveguide 152 of the blue pixel B is displaced away from the amplifier gate 159.

因此，參照圖35，根據第六實施例之固態影像拾取裝置63以箭頭所示的方向位移一段預定位移量。特別而言，第二綠色像素Gr的波導152朝向傾斜的右上側位移(如箭頭Y)而離開轉換閘極43及放大器閘極49。藍色像素B的波導152朝向傾斜右下側位移(如箭頭Z)以對稱於第二綠色像素Gr的波導152。第一綠色像素Gb及紅色像素R的波導152朝向水平左方位移而離開轉換閘極43。單位像素群集42中的波導152的佈局在整個像素部位40中為相同。Therefore, referring to Fig. 35, the solid-state image pickup device 63 according to the sixth embodiment is displaced by a predetermined displacement amount in the direction indicated by the arrow. In particular, the waveguide 152 of the second green pixel Gr exits the switching gate 43 and the amplifier gate 49 toward the upper right side of the tilt (as indicated by arrow Y). The waveguide 152 of the blue pixel B is displaced toward the lower right side of the tilt (as indicated by arrow Z) to be symmetric with the waveguide 152 of the second green pixel Gr. The waveguide 152 of the first green pixel Gb and the red pixel R is displaced leftward in the horizontal direction away from the switching gate 43. The layout of the waveguides 152 in the unit pixel cluster 42 is the same throughout the pixel portion 40.

其他組構類似於根據第四實施例所述者。在圖35、36A及36B中，相似的參考標號指的是類似圖31A及31B中的元件。Other configurations are similar to those described in accordance with the fourth embodiment. In Figures 35, 36A and 36B, like reference numerals refer to elements similar to those of Figures 31A and 31B.

利用根據第六實施例之固態影像拾取裝置63，可減少或是消除第一及第二綠色像素Gb及Gr之間的靈敏度差異。雜訊(例如格柵雜訊)可被減少。此外，可控制紅色像素R及藍色像素B的靈敏度。像素部位40中的靈敏度變異可減少，且可減少彩色遮光。因為像素部位40中的靈敏度變異減少，因此可減少校正電路並減少電路尺寸。With the solid-state image pickup device 63 according to the sixth embodiment, the sensitivity difference between the first and second green pixels Gb and Gr can be reduced or eliminated. Noise (such as grille noise) can be reduced. In addition, the sensitivity of the red pixel R and the blue pixel B can be controlled. The sensitivity variation in the pixel portion 40 can be reduced, and color shading can be reduced. Since the sensitivity variation in the pixel portion 40 is reduced, the correction circuit can be reduced and the circuit size can be reduced.

7.第七實施例7. Seventh embodiment 固態影像拾取裝置之例示性組構Exemplary organization of solid-state image pickup device

圖37顯示根據本發明之第七實施例之固態影像拾取裝置。本實施例之固態影像拾取裝置為四像素共用類型的MOS固態影像拾取裝置，其中四個像素共用一個浮動擴散、一個放大器電晶體及一個選擇電晶體。圖37為顯示單位像素群集中之第二綠色像素Gr的橫剖面圖。Figure 37 shows a solid-state image pickup device according to a seventh embodiment of the present invention. The solid-state image pickup device of this embodiment is a four-pixel sharing type MOS solid-state image pickup device in which four pixels share one floating diffusion, one amplifier transistor, and one selection transistor. Figure 37 is a cross-sectional view showing a second green pixel Gr in a unit pixel cluster.

基層中的不對稱配置不僅會發生在聚合矽製成的閘極中，亦會發生於接線圖案中。根據第七實施例之固態影像拾取裝置可獲得基層之接線部位155的光學對稱。The asymmetric configuration in the base layer occurs not only in the gates made of the polymer but also in the wiring pattern. The solid-state image pickup device according to the seventh embodiment can obtain optical symmetry of the wiring portion 155 of the base layer.

首先，為了便於了解第七實施例，參照圖38說明改善之前的比較性範例。圖38為顯示四像素共用類型的單位像素群集中的第二綠色像素Gr的橫剖面圖，其中四個像素共用一個浮動擴散、一個放大器電晶體及一個選擇電晶體。在比較性範例的固態影像拾取裝置33中，參照圖38，作為光電轉換器的光二極體PD4形成於半導體基板24的表面上，且在半導體基板24之上形成包含接線部位26的多數層，並以層間絕緣膜25夾設於其之間。波導23形成於光二極體PD4之上，以使波導23嵌入於層間絕緣膜25中。彩色濾波層28形成於波導23之上。微透鏡29(亦稱為晶片上透鏡)形成於彩色濾波層28之上。在此範例中，波導23設置於底層中的接線部位26之上。底層中的接線部位26的一部份突出至光二極體PD4之上的區域中，且包含接線部位26的底層於單位像素群集中具有不對稱配置。儘管並未顯示，在其他像素(包含第一綠色像素Gb、紅色像素R、藍色像素B)中，波導23之下的底層中之接線部位26不會突出至光二極體PD1、PD2、PD3之上的區域中。First, in order to facilitate understanding of the seventh embodiment, a comparative example before improvement will be described with reference to FIG. 38 is a cross-sectional view showing a second green pixel Gr in a unit pixel cluster of a four-pixel sharing type in which four pixels share one floating diffusion, one amplifier transistor, and one selection transistor. In the solid-state image pickup device 33 of the comparative example, referring to FIG. 38, a photodiode PD4 as a photoelectric converter is formed on the surface of the semiconductor substrate 24, and a plurality of layers including the wiring portion 26 are formed on the semiconductor substrate 24, The interlayer insulating film 25 is interposed therebetween. The waveguide 23 is formed over the photodiode PD4 so that the waveguide 23 is embedded in the interlayer insulating film 25. A color filter layer 28 is formed over the waveguide 23. Microlenses 29 (also referred to as on-wafer lenses) are formed over color filter layer 28. In this example, the waveguide 23 is disposed over the junction 26 in the bottom layer. A portion of the wiring portion 26 in the bottom layer protrudes into the region above the photodiode PD4, and the bottom layer including the wiring portion 26 has an asymmetrical configuration in the unit pixel cluster. Although not shown, in other pixels (including the first green pixel Gb, the red pixel R, and the blue pixel B), the wiring portion 26 in the underlayer below the waveguide 23 does not protrude to the photodiodes PD1, PD2, PD3. In the area above.

在比較性範例的固態影像拾取裝置33中，如圖38之圓圈h所示，入射於第二綠色像素Gr的部份入射光L被底層中的接線部位26遮住，造成第二綠色像素Gr的靈敏度減少。因此，第一及第二綠色像素Gb及Gr之間的靈敏度差異會出現。若底層中的接線部位26的一部份延伸至另一彩色像素的光二極體之上，且若包含接線部位26的底層的佈局是對稱的，則可能發生彩色遮光。In the solid-state image pickup device 33 of the comparative example, as shown by a circle h in FIG. 38, a portion of the incident light L incident on the second green pixel Gr is blocked by the wiring portion 26 in the underlayer, resulting in the second green pixel Gr. The sensitivity is reduced. Therefore, a difference in sensitivity between the first and second green pixels Gb and Gr may occur. If a portion of the wiring portion 26 in the bottom layer extends over the photodiode of another color pixel, and if the layout of the bottom layer including the wiring portion 26 is symmetrical, color shading may occur.

在根據第七實施例的固態影像拾取裝置65中，作為光電轉換器的光二極體PD4形成於半導體基板153的表面上，且包含接線部位155的多數層形成於半導體基板153之上，以層間絕緣膜154夾設於其之間。接線部位155基本上是在對應於光二極體PD4的區域中開口。波導152形成於光二極體PD4之上，以使波導152嵌入於層間絕緣膜154中。波導152引導入射光至光二極體PD。層間絕緣膜154的表面被平坦化。彩色濾波層157形成於層間絕緣膜154的表面上。微透鏡158(亦稱為晶片上透鏡)形成於彩色濾波層157之上。在此實施例中，於底層的接線部位155之上設置波導152，且底層中的接線部位155的一部份突出至光二極體PD4之上的區域。儘管並未顯示，但在其他像素(包含第一綠色像素Gb、紅色像素R、藍色像素B)中，波導152之下的底層中之接線部位155不會突出至光二極體PD1、PD2、PD3之上的區域中。因此，包含接線部位155的底層的佈局在單位像素群集42中具有不對稱的配置。In the solid-state image pickup device 65 according to the seventh embodiment, the photodiode PD4 as a photoelectric converter is formed on the surface of the semiconductor substrate 153, and a plurality of layers including the wiring portion 155 are formed over the semiconductor substrate 153 with interlayer An insulating film 154 is interposed therebetween. The wiring portion 155 is substantially open in a region corresponding to the photodiode PD4. The waveguide 152 is formed over the photodiode PD4 such that the waveguide 152 is embedded in the interlayer insulating film 154. The waveguide 152 directs incident light to the photodiode PD. The surface of the interlayer insulating film 154 is planarized. A color filter layer 157 is formed on the surface of the interlayer insulating film 154. A microlens 158 (also referred to as an on-wafer lens) is formed over the color filter layer 157. In this embodiment, the waveguide 152 is disposed over the wiring portion 155 of the bottom layer, and a portion of the wiring portion 155 in the bottom layer protrudes to a region above the photodiode PD4. Although not shown, in other pixels (including the first green pixel Gb, the red pixel R, and the blue pixel B), the wiring portion 155 in the underlayer below the waveguide 152 does not protrude to the photodiodes PD1, PD2. In the area above PD3. Thus, the layout of the bottom layer containing the wiring locations 155 has an asymmetrical configuration in the unit pixel cluster 42.

在此實施例中，第二綠色像素Gr的波導152位移離開突出至光二極體PD4的接線部位155。其他彩色像素R、Gb、及B的波導152以相對於個別光二極體的相同位置而設置。因為僅有第二綠色像素Gr的波導152位移離開初始狀態，則單位像素群集42中之第二綠色像素Gr的波導152係相對於第二綠色像素Gr及其他相鄰像素Gb、R及B之間的邊界為不對稱於其他彩色像素Gb、R及B的波導152。單位像素群集42中之波導152的佈局在整個像素部位40中為相同。In this embodiment, the waveguide 152 of the second green pixel Gr is displaced away from the wiring portion 155 protruding to the photodiode PD4. The waveguides 152 of the other color pixels R, Gb, and B are disposed at the same position with respect to the individual photodiodes. Since only the waveguide 152 of the second green pixel Gr is displaced away from the initial state, the waveguide 152 of the second green pixel Gr in the unit pixel cluster 42 is relative to the second green pixel Gr and other adjacent pixels Gb, R, and B. The boundary between the two is a waveguide 152 that is asymmetrical to the other color pixels Gb, R, and B. The layout of the waveguides 152 in the unit pixel cluster 42 is the same throughout the pixel portion 40.

四個像素共用一個浮動擴散、一個放大器電晶體及一個選擇電晶體的四像素共用類型的其他組構類似於根據第四實施例所述者。省略多餘的說明。The other configurations of the four-pixel sharing type in which four pixels share one floating diffusion, one amplifier transistor, and one selection transistor are similar to those according to the fourth embodiment. Omit redundant instructions.

利用根據第七實施例之固態影像拾取裝置65，第二綠色像素Gr之波導152位移離開突出至光二極體PD4之上的區域的接線部位155。因此，入射光L不會被接線部位155遮住，且係入射於光二極體PD4之上因此第二綠色像素Gr的靈敏度可增加。因此，第一及第二綠色像素Gb及Gr之間的靈敏度差異可被減少或是消除。綠色像素Gb及Gr的靈敏度可為相等。因此，藉由減少第一及第二綠色像素Gb及Gr之間的靈敏度差異，可減少雜訊(例如格柵雜訊)並可提供具有高影像品質的固態影像拾取裝置。With the solid-state image pickup device 65 according to the seventh embodiment, the waveguide 152 of the second green pixel Gr is displaced away from the wiring portion 155 protruding to the region above the photodiode PD4. Therefore, the incident light L is not blocked by the wiring portion 155 and is incident on the photodiode PD4 so that the sensitivity of the second green pixel Gr can be increased. Therefore, the difference in sensitivity between the first and second green pixels Gb and Gr can be reduced or eliminated. The sensitivity of the green pixels Gb and Gr can be equal. Therefore, by reducing the difference in sensitivity between the first and second green pixels Gb and Gr, noise (for example, grid noise) can be reduced and a solid-state image pickup device with high image quality can be provided.

若底層中的接線部位155的一部分突出至另一彩色像素的PD之上的區域中，則位移該像素的波導。利用此種組構，入射光不會被接線部位155遮住，且可減少彩色遮光。If a portion of the wiring portion 155 in the bottom layer protrudes into a region above the PD of another color pixel, the waveguide of the pixel is displaced. With this configuration, incident light is not blocked by the wiring portion 155, and color shading can be reduced.

8.第八實施例8. Eighth embodiment 固態影像拾取裝置之例示性組構Exemplary organization of solid-state image pickup device

圖39A及39B顯示根據本發明之第八實施例之固態影像拾取裝置。本實施例之固態影像拾取裝置為四像素共用類型的MOS固態影像拾取裝置，其中四個像素共用一個浮動擴散、一個放大器電晶體及一個選擇電晶體。圖39A及39B為顯示根據第八實施例，最後狀態中的角範圍的中心的單位像素群集及角範圍的邊緣的單位像素群集的概略組構圖。39A and 39B show a solid-state image pickup device according to an eighth embodiment of the present invention. The solid-state image pickup device of this embodiment is a four-pixel sharing type MOS solid-state image pickup device in which four pixels share one floating diffusion, one amplifier transistor, and one selection transistor. 39A and 39B are schematic block diagrams showing a unit pixel cluster of the unit pixel cluster at the center of the angular range in the final state and the edge of the angular range according to the eighth embodiment.

根據此實施例之固態影像拾取裝置藉由組合根據前述之第四至第七實施例之任一者所述之波導位移及波導之瞳孔校正而減少綠色像素Gr及Gb之間的靈敏度差異，且減少彩色遮光。The solid-state image pickup device according to this embodiment reduces the sensitivity difference between the green pixels Gr and Gb by combining the waveguide displacement according to any of the fourth to seventh embodiments described above and the pupil correction of the waveguide, and Reduce color shading.

首先，參照圖40A至43說明對於波導之瞳孔校正。在圖40A至43的橫剖面圖中，為了便於說明，未顯示像素電晶體。圖40A顯示位於角範圍的中心的像素。圖40B顯示位於角範圍的末端的像素。參照圖40A及40B，在固態影像拾取裝置的像素中，作為光電轉換器的光二極體PD形成於半導體基板153的表面上，且包含接線層155的多數層形成於半導體基板153之上除了光二極體PD以外的區域中，並以層間絕緣膜154夾設於其之間。波導152形成於光二極體PD之上，以使波導152嵌入於層間絕緣膜154中。波導152引導入射光至光二極體PD。層間絕緣膜154的表面被平坦化。對應於波導152的彩色濾波層157形成於平坦化的表面上。微透鏡158(亦稱為晶片上透鏡)形成於彩色濾波層157上。First, the pupil correction for the waveguide will be described with reference to Figs. 40A to 43. In the cross-sectional views of Figs. 40A to 43, the pixel transistor is not shown for convenience of explanation. Figure 40A shows pixels located at the center of the angular extent. Figure 40B shows the pixels at the end of the angular range. Referring to FIGS. 40A and 40B, in the pixels of the solid-state image pickup device, a photodiode PD as a photoelectric converter is formed on the surface of the semiconductor substrate 153, and a plurality of layers including the wiring layer 155 are formed on the semiconductor substrate 153 except for the light two. In the region other than the polar body PD, the interlayer insulating film 154 is interposed therebetween. The waveguide 152 is formed over the photodiode PD such that the waveguide 152 is embedded in the interlayer insulating film 154. The waveguide 152 directs incident light to the photodiode PD. The surface of the interlayer insulating film 154 is planarized. A color filter layer 157 corresponding to the waveguide 152 is formed on the planarized surface. Microlenses 158 (also referred to as on-wafer lenses) are formed on color filter layer 157.

形成波導152以使波導孔係形成於光二極體PD之上的層間絕緣膜154中，且以折射率高於層間絕緣膜154之折射率的透光材料填充波導孔。材料為例如氮化矽膜、鑽石膜或是樹脂材料。微透鏡158及彩色濾波層157接受瞳孔校正，以有效地聚集均勻的斜向光。瞳孔校正從角範圍的中心(例如像素部位的中心)朝向角範圍的邊緣而漸大。The waveguide 152 is formed such that a waveguide hole is formed in the interlayer insulating film 154 over the photodiode PD, and the waveguide hole is filled with a light transmissive material having a refractive index higher than that of the interlayer insulating film 154. The material is, for example, a tantalum nitride film, a diamond film or a resin material. The microlens 158 and color filter layer 157 accept pupil correction to effectively concentrate uniform oblique light. The pupil correction is made larger from the center of the angular range (for example, the center of the pixel portion) toward the edge of the angular range.

形成於對應像素部位40中之光二極體PD的波導152具有圓柱形本體，其之橫剖面為從光入射側的一端到光出口側的一端為恆定的，如上述。例如，具有恆定剖面的圓柱形本體為圓柱、稜鏡或是卵形柱體(包含橢圓柱體)。入射於波導152的光入射側的一端的入射光線的中心LC對準波導152的中央軸C。The waveguide 152 of the photodiode PD formed in the corresponding pixel portion 40 has a cylindrical body whose cross section is constant from one end on the light incident side to one end on the light exit side, as described above. For example, a cylindrical body having a constant cross section is a cylinder, a crucible, or an oval cylinder (including an elliptical cylinder). The center LC of the incident ray incident on one end of the light incident side of the waveguide 152 is aligned with the central axis C of the waveguide 152.

在此情況中，在圖40A的角範圍的中心的像素中，入射光以中央軸方向入射於微透鏡158。由微透鏡158聚集的入射光由彩色濾波層157傳送及分離，且入射於波導152的光入射側的一端。入射光沿著波導152的中央軸C被引導，且從波導152的光出口側離開。光發射到光二極體PD的中心。也就是說，透過微透鏡158的中心所傳送的入射光沿著彩色濾波層157的中心及波導152的中央軸C而傳送，且發射到光二極體PD的中心。因此，對波導152並未實施瞳孔校正。In this case, in the pixel at the center of the angular range of FIG. 40A, incident light is incident on the microlens 158 in the central axis direction. The incident light collected by the microlens 158 is transmitted and separated by the color filter layer 157, and is incident on one end of the light incident side of the waveguide 152. The incident light is guided along the central axis C of the waveguide 152 and exits from the light exit side of the waveguide 152. Light is emitted to the center of the photodiode PD. That is, the incident light transmitted through the center of the microlens 158 is transmitted along the center of the color filter layer 157 and the central axis C of the waveguide 152, and is emitted to the center of the photodiode PD. Therefore, pupil correction is not performed on the waveguide 152.

在位移離開角範圍的中心位置的像素中，或是在圖式中的角範圍的邊緣的像素中，對於微透鏡158及彩色濾波層157實施瞳孔校正，以有效地聚集均勻的斜向光，如上述。又，入射於波導152的光入射側的一端的入射光線的中心LC對準波導152的中央軸C。亦即，對於波導152實施瞳孔校正。In the pixels displaced from the center of the angular range, or in the pixels at the edges of the angular range in the drawing, pupil correction is performed on the microlens 158 and the color filter layer 157 to effectively gather uniform oblique light, As above. Further, the center LC of the incident light incident on one end of the light incident side of the waveguide 152 is aligned with the central axis C of the waveguide 152. That is, pupil correction is performed on the waveguide 152.

在其上入射相同波長的入射光的光二極體PD中，在像素部位40中，各個波導152的中央軸C相對於對應的光二極體PD的中心的位移量從像素部位40的中心的光二極體PD向外而漸大。對於從像素部位40的中心朝向外側的微透鏡158實施瞳孔校正，然而，校正量不足。因此，對於具有相同波長的入射光而言，波導152的中央軸相對於光二極體PD的中心的位移量增加，以使從微透鏡158的中心產生的光線中心對準波導152的中央軸C。In the photodiode PD on which the incident light of the same wavelength is incident, in the pixel portion 40, the displacement amount of the central axis C of each waveguide 152 with respect to the center of the corresponding photodiode PD is from the center of the pixel portion 40. The polar body PD is outward and gradually enlarged. The pupil correction is performed on the microlens 158 from the center of the pixel portion 40 toward the outside, however, the amount of correction is insufficient. Therefore, for incident light having the same wavelength, the amount of displacement of the central axis of the waveguide 152 with respect to the center of the photodiode PD is increased so that the center of the light generated from the center of the microlens 158 is aligned with the central axis C of the waveguide 152. .

波導152的直徑能容許從波導152的光出口側的一端的入射光照射至光二極體PD的表面區域之內。因此，不像先前技術的波導，波導152的尺寸不等於光二極體PD的表面尺寸。波導152的直徑較佳為大於透過波導152的光入射側的一端的彩色濾波層157的入射光的照光直徑。照光直徑隨著入射光的波長而改變。例如，當彩色濾波層157將入射光分離為紅色光、綠色光及藍色光時，紅色光的照光直徑最大，綠色光的照光直徑小於紅色光的照光直徑，藍色光的照光直徑小於綠色光的照光直徑。若波導152的直徑隨著色彩而改變，則佈局變得很複雜。例如，波導152的直徑係基於具有入射光的中間波長範圍的綠色光而決定。或者，若在波導152與接線層150的接線部位155之間設置餘地，則可基於紅色光而決定波導152的直徑。The diameter of the waveguide 152 can allow incident light from one end of the light exit side of the waveguide 152 to be irradiated into the surface area of the photodiode PD. Therefore, unlike the waveguide of the prior art, the size of the waveguide 152 is not equal to the surface size of the photodiode PD. The diameter of the waveguide 152 is preferably larger than the diameter of the incident light of the color filter layer 157 which is transmitted through one end of the light incident side of the waveguide 152. The illumination diameter changes with the wavelength of the incident light. For example, when the color filter layer 157 separates the incident light into red light, green light, and blue light, the red light has the largest diameter, the green light has a smaller diameter than the red light, and the blue light has a smaller diameter than the green light. Illumination diameter. If the diameter of the waveguide 152 changes with color, the layout becomes complicated. For example, the diameter of the waveguide 152 is determined based on green light having an intermediate wavelength range of incident light. Alternatively, if a space is provided between the waveguide 152 and the connection portion 155 of the wiring layer 150, the diameter of the waveguide 152 can be determined based on the red light.

可藉由減少波導152的直徑為小於先前技術的波導的直徑而增加瞳孔校正的餘地。此外，可進一步藉由減少設至於波導152周圍的接線部位155的寬度而增加波導152的瞳孔校正餘地。The margin correction can be increased by reducing the diameter of the waveguide 152 to be smaller than the diameter of the waveguide of the prior art. Further, the pupil correction margin of the waveguide 152 can be further increased by reducing the width of the wiring portion 155 provided around the waveguide 152.

參照圖41A至41C，在其上入射具有相同波長的入射光的光二極體PD中，在像素部位40中，各個波導152的中央軸C相對於對應的光二極體PD的中心的位移量隨著從像素部位40的中心向外而漸大。換而言之，考慮距離像素部位40的中心相同距離的光二極體PD，各個波導152的中央軸C相對於對應的光二極體PD的中央軸FC的位移量隨著入射於光二極體PD上的光線波長增加而漸增。波導152之瞳孔校正量滿足「藍色光(B)<綠色光(G)<紅色光(R)」的關係。為了方便說明平面圖的佈局，波導152小於光二極體PD。因此，可藉由各個波導152而最佳化遮光。Referring to FIGS. 41A to 41C, in the photodiode PD on which incident light having the same wavelength is incident, in the pixel portion 40, the displacement amount of the central axis C of each waveguide 152 with respect to the center of the corresponding photodiode PD is It is enlarged outward from the center of the pixel portion 40. In other words, considering the photodiode PD at the same distance from the center of the pixel portion 40, the displacement amount of the central axis C of each waveguide 152 with respect to the central axis FC of the corresponding photodiode PD is incident on the photodiode PD. The wavelength of light on the surface increases and increases. The pupil correction amount of the waveguide 152 satisfies the relationship of "blue light (B) < green light (G) < red light (R)". In order to facilitate the layout of the plan view, the waveguide 152 is smaller than the photodiode PD. Therefore, the shading can be optimized by the respective waveguides 152.

一般而言，由微透鏡158聚集的入射光的入射角隨著位置從像素部位20偏離朝向外部而漸增。對於微透鏡158實施瞳孔校正，然而，瞳孔校正量不充足。因此，如上述，對於具有相同波長的入射光而言，波導16的中央軸相對於光二極體的中心的位移量增加，以使從微透鏡158產生的光線的中心對準波導16的中央軸C。In general, the incident angle of the incident light collected by the microlens 158 gradually increases as the position deviates from the pixel portion 20 toward the outside. The pupil correction is performed for the microlens 158, however, the pupil correction amount is insufficient. Therefore, as described above, for incident light having the same wavelength, the amount of displacement of the central axis of the waveguide 16 with respect to the center of the photodiode is increased so that the center of the light generated from the microlens 158 is aligned with the central axis of the waveguide 16. C.

一般而言，微透鏡158及彩色濾波層157接受瞳孔校正，以使入射光係以中央軸方向入射於光二極體PD上。例如，對於具有參考波長(例如綠色光)的入射光的微透鏡158及彩色濾波層157實施瞳孔校正。在此情況中，參照圖41A，因為藍色光易被微透鏡158彎曲，則當入射於波導152的光入射側的一端時，藍色光的入射角變大。因此，微透鏡158及彩色濾波層157藉由瞳孔校正而相對於光二極體PD的中央軸FC而大幅位移朝向像素部位的中心。然而，即使當微透鏡158及彩色濾波層157被大幅移動時，從彩色濾波層157發射的光線仍入射於波導152的光入射側的一端的接近光二極體PD的中央軸FC的位置。因此，波導152的光入射側的一端的幾乎全部的入射光被引導至波導152。在此情況中，校正波導152的位置以使入射於波導152的光入射側的一端的入射光的光線中央軸LC對準波導152的中央軸C。In general, the microlens 158 and the color filter layer 157 receive pupil correction so that the incident light is incident on the photodiode PD in the central axis direction. For example, pupil correction is performed on the microlens 158 and the color filter layer 157 having incident light of a reference wavelength (e.g., green light). In this case, referring to FIG. 41A, since the blue light is easily bent by the microlens 158, when incident on one end of the light incident side of the waveguide 152, the incident angle of the blue light becomes large. Therefore, the microlens 158 and the color filter layer 157 are largely displaced toward the center of the pixel portion with respect to the central axis FC of the photodiode PD by pupil correction. However, even when the microlens 158 and the color filter layer 157 are largely moved, the light emitted from the color filter layer 157 is incident on the position of the one end of the light incident side of the waveguide 152 which is close to the central axis FC of the photodiode PD. Therefore, almost all of the incident light of one end of the light incident side of the waveguide 152 is guided to the waveguide 152. In this case, the position of the waveguide 152 is corrected such that the central axis LC of the incident light of the incident light incident on the light incident side of the waveguide 152 is aligned with the central axis C of the waveguide 152.

參照圖41C，因為比起藍色光，紅色光難以被微透鏡158彎曲，因此當入射於波導152的光入射側的一端時，紅色光的入射角小於藍色光的入射角。又，微透鏡158及彩色濾波層157藉由瞳孔校正而相對於光二極體PD的中央軸FC而大幅位移朝向像素部位的中心。因此，從彩色濾波層157發射的光線入射於波導152的光入射側的一端的遠離光二極體PD的中央軸FC的位置。在某些情況中，光可入射以使光線的主要部份從波導152的光入射側的一端突出。然而，在本發明之此實施例中，校正波導152的位置以使入射於波導152的光入射側的一端的入射光的中央軸LC對準波導152的中央軸C。因此，從彩色濾波層157發射的幾乎全部的入射光入射於波導152的光入射側的一端，且被引導至波導152。Referring to FIG. 41C, since red light is hard to be bent by the microlens 158 than blue light, when incident on one end of the light incident side of the waveguide 152, the incident angle of the red light is smaller than the incident angle of the blue light. Further, the microlens 158 and the color filter layer 157 are largely displaced toward the center of the pixel portion with respect to the central axis FC of the photodiode PD by pupil correction. Therefore, the light emitted from the color filter layer 157 is incident on the position of the one end of the light incident side of the waveguide 152 away from the central axis FC of the photodiode PD. In some cases, light may be incident such that a major portion of the light protrudes from one end of the light incident side of the waveguide 152. However, in this embodiment of the invention, the position of the waveguide 152 is corrected such that the central axis LC of the incident light incident on one end of the light incident side of the waveguide 152 is aligned with the central axis C of the waveguide 152. Therefore, almost all of the incident light emitted from the color filter layer 157 is incident on one end of the light incident side of the waveguide 152, and is guided to the waveguide 152.

又，參照圖41B，比起藍色光而言，綠色光難以被微透鏡158彎曲，但比起紅色光而言，容易被微透鏡158彎曲。入射於波導152的一端的入射光的入射角小於藍色光的入射角，但大於紅色光的入射角。因為微透鏡158及彩色濾波層157藉由瞳孔校正而相對於光二極體PD的中央軸FC而位移朝向像素部位的中心，則從彩色濾波層157發射的光陷入設置波導152的光入射側的一端的遠離光二極體PD的中央軸FC的位置。然而，在本發明之此實施例中，校正波導152的位置以使入射於波導152的光入射側的一端的入射光的光線中央軸LC對準波導152的中央軸C。因此，從彩色濾波層157發射的幾乎全部的入射光入射至波導152的光入射側的一端，且被引導至波導152。Further, referring to FIG. 41B, green light is less likely to be bent by the microlens 158 than blue light, but is easily bent by the microlens 158 than red light. The incident angle of the incident light incident on one end of the waveguide 152 is smaller than the incident angle of the blue light, but larger than the incident angle of the red light. Since the microlens 158 and the color filter layer 157 are displaced toward the center of the pixel portion with respect to the central axis FC of the photodiode PD by pupil correction, the light emitted from the color filter layer 157 is trapped on the light incident side of the waveguide 152. The position of one end away from the central axis FC of the photodiode PD. However, in this embodiment of the invention, the position of the waveguide 152 is corrected such that the central axis LC of the incident light of the incident light incident on the light incident side of the waveguide 152 is aligned with the central axis C of the waveguide 152. Therefore, almost all of the incident light emitted from the color filter layer 157 is incident on one end of the light incident side of the waveguide 152, and is guided to the waveguide 152.

如上述，各個波導152的中央軸C相對於對應的光二極體PD的中心的位移量隨著由彩色濾波層157分離的光線之波長越小而漸小。因此，即使當波導152的光入射側的一端的入射光的波長不同，但可根據波長而分別設置波導152，使像素的靈敏度為相同，而不會產生彩色遮光。As described above, the displacement amount of the central axis C of each of the waveguides 152 with respect to the center of the corresponding photodiode PD becomes smaller as the wavelength of the light separated by the color filter layer 157 is smaller. Therefore, even when the wavelength of the incident light at one end of the light incident side of the waveguide 152 is different, the waveguide 152 can be separately provided according to the wavelength so that the sensitivity of the pixels is the same without generating color shading.

圖42A、42B及43各顯示四像素共用類型的固態影像拾取裝置，其中四個像素共用一個浮動擴散、一個放大器電晶體及一個選擇電晶體，其中對於上述波導實施瞳孔校正。圖42A顯示四像素共用類型中的單位像素群集42的波導152的佈局，其中四個像素共用一個浮動擴散、一個放大器電晶體及一個選擇電晶體，該單位像素群集42位於如圖43所示之像素部位40的角範圍的中心。圖42B顯示四像素共用類型中的單位像素群集42的波導152的佈局，其中四個像素共用一個浮動擴散、一個放大器電晶體及一個選擇電晶體，該單位像素群集42位於如圖43所示之像素部位40的角範圍的右上邊緣。四像素共用類型的單位像素群集42的波導152之佈局在像素部位40的角範圍的右下邊緣、左下邊緣係相對於角範圍的中心而對稱於圖42B所示之波導152的佈局。42A, 42B and 43 each show a four-pixel sharing type solid-state image pickup device in which four pixels share a floating diffusion, an amplifier transistor, and a selection transistor, wherein pupil correction is performed for the waveguide. Figure 42A shows a layout of a waveguide 152 of a unit pixel cluster 42 in a four pixel sharing type in which four pixels share a floating diffusion, an amplifier transistor, and a selection transistor, which is located as shown in Figure 43. The center of the angular extent of the pixel portion 40. Figure 42B shows a layout of a waveguide 152 of a unit pixel cluster 42 in a four pixel sharing type in which four pixels share a floating diffusion, an amplifier transistor, and a selection transistor, which is located as shown in Figure 43. The upper right edge of the angular extent of the pixel portion 40. The layout of the waveguide 152 of the unit pixel cluster 42 of the four-pixel sharing type is symmetric with respect to the layout of the waveguide 152 shown in FIG. 42B at the lower right edge and the lower left edge of the angular range of the pixel portion 40 with respect to the center of the angular range.

根據第八實施例之固態影像拾取裝置67係由將根據第四實施例的第二綠色像素Gr的佈局僅加入如圖40A至43所實施的瞳孔校正的波導152的佈局而組構完成。The solid-state image pickup device 67 according to the eighth embodiment is constructed by the layout in which the layout of the second green pixel Gr according to the fourth embodiment is added only to the pupil-corrected waveguide 152 implemented as shown in FIGS. 40A to 43.

因為根據第八實施例的固態影像拾取裝置67具有其中對於波導152實施瞳孔校正的結構，如此則可減少彩色遮光。又，可減少第一及第二綠色像素Gb及Gr之間的靈敏度差異，且可提供具有高影像品質的固態影性拾取裝置。Since the solid-state image pickup device 67 according to the eighth embodiment has a structure in which pupil correction is performed for the waveguide 152, color shading can be reduced. Further, the sensitivity difference between the first and second green pixels Gb and Gr can be reduced, and a solid-state image pickup device having high image quality can be provided.

或者，第八實施例可具有第五至第七實施例其中任一者組合參照圖40A至43所述之對波導實施瞳孔校正的組構。Alternatively, the eighth embodiment may have a configuration in which any one of the fifth to seventh embodiments is combined with the pupil correction performed on the waveguide described with reference to FIGS. 40A to 43.

9.第九實施例9. Ninth Embodiment 固態影像拾取裝置的例示性組構Exemplary organization of solid-state image pickup device

圖44顯示根據本發明之第九實施例之固態影像拾取裝置。本實施例之固態影像拾取裝置為二像素共用類型的MOS固態影像拾取裝置，其中兩個像素共用一個浮動擴散、一個放大器電晶體及一個選擇電晶體。Figure 44 shows a solid-state image pickup device according to a ninth embodiment of the present invention. The solid-state image pickup device of this embodiment is a two-pixel sharing type MOS solid-state image pickup device in which two pixels share a floating diffusion, an amplifier transistor, and a selection transistor.

首先，為了便於了解第九實施例，參照圖45說明二像素共用類型的固態影像拾取裝置34的比較性範例，其中兩個像素共用一個浮動擴散、一個放大器電晶體及一個選擇電晶體。固態影像拾取裝置34具有包含波導111的例示性組構。固態影像拾取裝置34係藉由將波導111加入上述之圖1所示之固態影像拾取裝置1的各個像素中而完成組構。其他組構類似於參照圖1所說明者。在圖45中，相似的參考標號指的是類似於圖1中之元件。在固態影像拾取裝置34中，在二像素共用類型的單位像素群集2中，其中兩個像素共用一個浮動擴散、一個放大器電晶體及一個選擇電晶體，轉換閘極3相對於相鄰像素之間的邊界為不對稱的。特別而言，像素B及Gr的轉換閘極3相對於像素B及Gr之間的邊界為不對稱的，且像素Gb及R的轉換閘極3相對於像素Gb及R之間的邊界為不對稱的。假設包含紅色像素R、第一及第二綠色像素Gb及Gr及藍色像素B的四個像素的群集具有Bayer圖案，因為轉換閘極3的佈局於基層中為相互不對稱，則會產生綠色像素Gb、Gr之間的靈敏度差異，且會出現彩色遮光。First, in order to facilitate the understanding of the ninth embodiment, a comparative example of the two-pixel sharing type solid-state image pickup device 34 will be described with reference to FIG. 45, in which two pixels share one floating diffusion, one amplifier transistor, and one selection transistor. The solid-state image pickup device 34 has an exemplary configuration including a waveguide 111. The solid-state image pickup device 34 is constructed by adding the waveguide 111 to each pixel of the solid-state image pickup device 1 shown in FIG. 1 described above. Other configurations are similar to those described with reference to FIG. In FIG. 45, like reference numerals refer to elements similar to those in FIG. 1. In the solid-state image pickup device 34, in the unit pixel cluster 2 of the two-pixel sharing type, two of the pixels share a floating diffusion, an amplifier transistor, and a selection transistor, and the switching gate 3 is opposed to the adjacent pixel. The boundaries are asymmetrical. In particular, the switching gates 3 of the pixels B and Gr are asymmetric with respect to the boundary between the pixels B and Gr, and the boundary between the switching gates 3 of the pixels Gb and R with respect to the pixels Gb and R is not Symmetrical. It is assumed that a cluster of four pixels including the red pixel R, the first and second green pixels Gb and Gr, and the blue pixel B has a Bayer pattern, and since the layout of the switching gates 3 is asymmetric with respect to each other in the base layer, green is generated. The sensitivity difference between the pixels Gb and Gr, and color shading occurs.

參照圖44，根據第九實施例之固態影像拾取裝置69具有像素部位，其中二像素共用類型(其中兩個像素共用一個浮動擴散、一個放大器電晶體及一個選擇電晶體)的單位像素群集71為反覆的二維排成陣列。二像素共用類型的各個單位像素群集71包含兩個光二極體PD1及PD2(或是PD3及PD4)、兩個轉換電晶體Tr11及Tr12、一個浮動擴散FD、一個重設電晶體Tr2及一個放大器電晶體Tr3。對於光二極體PD1及PD2(或是PD3及PD4)分別形成波導78。在此實施例中，因為使用具有Bayer圖案的彩色濾波器，則反覆設置二像素共用類型的包含紅色像素R及第一綠色像素Gb的單位像素群集71，及二像素共用類型的包含藍色像素B及第二綠色像素Gr的單位像素群集71。二像素共用類型的相鄰兩單位像素群集71形成一個四個像素Gr、R、Gb及B的群集。Referring to FIG. 44, the solid-state image pickup device 69 according to the ninth embodiment has a pixel portion in which a unit pixel cluster 71 of a two-pixel sharing type in which two pixels share one floating diffusion, one amplifier transistor, and one selection transistor is The repeated two-dimensional arrays. Each unit pixel cluster 71 of the two-pixel sharing type includes two photodiodes PD1 and PD2 (or PD3 and PD4), two conversion transistors Tr11 and Tr12, a floating diffusion FD, a reset transistor Tr2, and an amplifier. Transistor Tr3. A waveguide 78 is formed for each of the photodiodes PD1 and PD2 (or PD3 and PD4). In this embodiment, since the color filter having the Bayer pattern is used, the unit pixel cluster 71 including the red pixel R and the first green pixel Gb of the two-pixel sharing type and the blue pixel of the two-pixel sharing type are repeatedly disposed. B and a unit pixel cluster 71 of the second green pixel Gr. The adjacent two unit pixel clusters 71 of the two-pixel sharing type form a cluster of four pixels Gr, R, Gb, and B.

轉換電晶體Tr11及Tr12分別包含由聚合矽製成的轉換閘極70、光二極體PD(PD1、PD2、PD3、PD4)及浮動擴散FD。重設電晶體Tr2包含由聚合矽製成的重設閘極72、浮動擴散FD及源極區域73。放大器電晶體Tr3包含由聚合矽製成的放大器閘極74、源極區域75及汲極區域76。浮動擴散FD及放大器閘極74藉由接線部位77相互連接。放大器電晶體Tr3的源極區域75連接於垂直信號線(未顯示)。The conversion transistors Tr11 and Tr12 respectively include a switching gate 70 made of a polymer germanium, photodiodes PD (PD1, PD2, PD3, PD4) and a floating diffusion FD. The reset transistor Tr2 includes a reset gate 72 made of a polymer germanium, a floating diffusion FD, and a source region 73. The amplifier transistor Tr3 includes an amplifier gate 74, a source region 75, and a drain region 76 made of a polymer germanium. The floating diffusion FD and the amplifier gate 74 are connected to each other by a wiring portion 77. The source region 75 of the amplifier transistor Tr3 is connected to a vertical signal line (not shown).

在此實施例中，個別像素R、G、Gr及B中的波導78以基層具有不對稱佈局的方向位移，亦即，在此實施例中，包含由聚合矽製成的轉換閘極70難以影響波導78。在此實施例中，第一綠色像素Gb及藍色像素B的波導78水平向右位移，且第二綠色像素Gr及紅色像素R的波導78垂直向下位移。在此實施例中的位移方向僅為範例。可取決於基層的不對稱配置而選擇任何位移方向。亦可選擇根據第四至第八實施例其中任一者的組構。當四個像素R、Gb、Gr及B形成一個群集時，各群集中的波導78的佈局在整個像素部位中為相同。In this embodiment, the waveguides 78 in the individual pixels R, G, Gr, and B are displaced in a direction in which the base layer has an asymmetric layout, that is, in this embodiment, it is difficult to include the switching gate 70 made of a polymer germanium. The waveguide 78 is affected. In this embodiment, the waveguides 78 of the first green pixel Gb and the blue pixel B are horizontally displaced to the right, and the waveguides 78 of the second green pixel Gr and the red pixel R are vertically displaced downward. The direction of displacement in this embodiment is merely an example. Any direction of displacement can be selected depending on the asymmetric configuration of the base layer. The configuration according to any of the fourth to eighth embodiments may also be selected. When the four pixels R, Gb, Gr, and B form a cluster, the layout of the waveguides 78 in each cluster is the same throughout the pixel portion.

利用根據第九實施例之固態影像拾取裝置69，個別像素之波導78係遠離影響波導78的轉移閘極70。因此，可以減少綠色像素Gb及Gr之間的靈敏度差異及彩色遮光。可分別對像素提供光學對稱，且可提供具有高影像品質的固態影像拾取裝置。With the solid-state image pickup device 69 according to the ninth embodiment, the waveguides 78 of the individual pixels are separated from the transfer gates 70 that affect the waveguides 78. Therefore, the sensitivity difference between the green pixels Gb and Gr and the color shading can be reduced. Optical symmetry can be provided to the pixels separately, and a solid-state image pickup device with high image quality can be provided.

10.第十實施例10. Tenth Embodiment 固態影像拾取裝置的例示性組構Exemplary organization of solid-state image pickup device

圖46、47A及47B各顯示根據本發明之第十實施例的固態影像拾取裝置。根據本實施例之固態影像拾取裝置為四像素共用類型的MOS固態影像拾取裝置，其中四個像素共用一個浮動擴散、一個放大器電晶體及一個選擇電晶體。圖47A為沿著圖46之直線XLVIIA-XLVIIA所取的概略橫剖面圖。圖47B為沿著圖46之直線XLVIIB-XLVIIB所取的概略橫剖面圖。46, 47A and 47B each show a solid-state image pickup device according to a tenth embodiment of the present invention. The solid-state image pickup device according to the present embodiment is a four-pixel sharing type MOS solid-state image pickup device in which four pixels share one floating diffusion, one amplifier transistor, and one selection transistor. Figure 47A is a schematic cross-sectional view taken along line XLVIIA-XLVIIA of Figure 46. Figure 47B is a schematic cross-sectional view taken along line XLVIIB-XLVIIB of Figure 46.

此實施例不使用做為調整機構的波導，但使用接線部位以調整光量，因而獲得光學對稱。This embodiment does not use a waveguide as an adjustment mechanism, but uses a wiring portion to adjust the amount of light, thereby obtaining optical symmetry.

首先，為了便於了解第十實施例，參照圖48、49A及49B說明四像素共用類型的固態影像拾取裝置35的比較性範例，其中四個像素共用一個浮動擴散、一個放大器電晶體及一個選擇電晶體。除了固態影像拾取裝置35在光二極體PD(PD1至PD4)的區域之上並不具有波導之外，比較範例之固態影像拾取裝置35之單位像素群集114類似於圖62所示之組構。在圖48所示的平面圖中，加入接線部位26。設置接線部位26以使其不位於光二極體PD之上方。參照圖48、49A及49B，圖62、63A及63B中相似的參考標號指的是相似的元件，且省略多餘說明。First, in order to facilitate the understanding of the tenth embodiment, a comparative example of a four-pixel sharing type solid-state image pickup device 35 will be described with reference to FIGS. 48, 49A and 49B, in which four pixels share one floating diffusion, one amplifier transistor, and one selection power. Crystal. The unit pixel cluster 114 of the solid-state image pickup device 35 of the comparative example is similar to the configuration shown in FIG. 62 except that the solid-state image pickup device 35 does not have a waveguide over the region of the photodiode PD (PD1 to PD4). In the plan view shown in Fig. 48, the wiring portion 26 is added. The wiring portion 26 is disposed so as not to be positioned above the photodiode PD. Referring to Figures 48, 49A and 49B, like reference numerals in Figures 62, 63A and 63B refer to like elements, and redundant description is omitted.

在比較性範例的固態影像拾取裝置35的單位像素群集114中，參照圖49A之沿著圖48的直線XLIXA-XLIXA所取的橫剖面圖，入射於第二綠色像素Gr的部份入射光被基層中的放大器閘極121遮住，且設置於靠近光二極體PD4之處。相比之下，參照圖49B之沿著圖48之直線XLIXB-XLIXB所取的橫剖面圖，入射於第一綠色像素Gb的光線不會被基層中的閘極遮住，且入射於光二極體PD1。入射於藍色像素B的入射光被放大器閘極121遮住。入射於第一綠色像素Gb的入射光不會被放大器閘極121遮住。因此，入射於綠色像素Gr的光量不同於入射於綠色像素Gb的光量。因此，出現靈敏度差異。又，像素Gr及B、及像素Gb及R之間出現入射光量差異。因此產生光學不對稱。In the unit pixel cluster 114 of the solid-state image pickup device 35 of the comparative example, referring to the cross-sectional view taken along line XLIXA-XLIXA of FIG. 49A of FIG. 49A, part of the incident light incident on the second green pixel Gr is The amplifier gate 121 in the base layer is hidden and placed close to the photodiode PD4. In contrast, referring to the cross-sectional view taken along line XLIXB-XLIXB of FIG. 49B of FIG. 49B, the light incident on the first green pixel Gb is not blocked by the gate in the base layer, and is incident on the photodiode. Body PD1. The incident light incident on the blue pixel B is blocked by the amplifier gate 121. The incident light incident on the first green pixel Gb is not blocked by the amplifier gate 121. Therefore, the amount of light incident on the green pixel Gr is different from the amount of light incident on the green pixel Gb. Therefore, a difference in sensitivity occurs. Further, a difference in incident light amount occurs between the pixels Gr and B and between the pixels Gb and R. This produces an optical asymmetry.

參照圖46、47A及47B，根據第十實施例之固態影像拾取裝置81除了波導及接線部位之外，四像素共用類型的單位像素群集42的組構類似於圖31A、31B及32所示的第四實施例的組構，其中四個像素共用一個浮動擴散、一個放大電晶體及一個選擇電晶體。特別而言，參照圖46，根據第十實施例之固態影像拾取裝置81包含四像素共用類型的單位像素群集42，其中四個像素共用一個浮動擴散、一個放大器電晶體及一個選擇電晶體，其中單一個像素電晶體單元共用作為光電轉換器的四個光二極體PD。更明確而言，單位像素群集42包含四個光二極體PD(PD1至PD4)、四個轉換電晶體Tr(Tr11至Tr14)、及單一個浮動擴散FD。更進一步，單位像素群集42包含單一個重設電晶體Tr2、一個放大器電晶體Tr3、及一個選擇電晶體Tr4。波導不形成於各個像素的光二極體之上。Referring to FIGS. 46, 47A and 47B, the solid-state image pickup device 81 according to the tenth embodiment is similar to the waveguide and the wiring portion, and the configuration of the unit pixel cluster 42 of the four-pixel sharing type is similar to that shown in FIGS. 31A, 31B and 32. The fabric of the fourth embodiment, wherein four pixels share a floating diffusion, an amplifying transistor, and a selection transistor. In particular, referring to FIG. 46, the solid-state image pickup device 81 according to the tenth embodiment includes a unit pixel cluster 42 of a four-pixel sharing type in which four pixels share a floating diffusion, an amplifier transistor, and a selection transistor, wherein A single pixel transistor unit shares four photodiodes PD as photoelectric converters. More specifically, the unit pixel cluster 42 includes four photodiodes PD (PD1 to PD4), four conversion transistors Tr (Tr11 to Tr14), and a single floating diffusion FD. Further, the unit pixel cluster 42 includes a single reset transistor Tr2, an amplifier transistor Tr3, and a selection transistor Tr4. The waveguide is not formed on the photodiode of each pixel.

浮動擴散FD設置於2×2陣列的四個光二極體PD1至PD4的中心。由聚合矽製成的轉換閘極43設置於浮動擴散FD與光二極體PD1至PD4之間。因此，形成四個PD所用之四個轉換電晶體Tr11至Tr14。重設電晶體Tr2、放大器電晶體Tr3、及選擇電晶體Tr4係連續水平地設置於四個光二極體PD1至PD4之下。The floating diffusion FD is disposed at the center of the four photodiodes PD1 to PD4 of the 2 × 2 array. A switching gate 43 made of a polymer germanium is disposed between the floating diffusion FD and the photodiodes PD1 to PD4. Therefore, four conversion transistors Tr11 to Tr14 for four PDs are formed. The reset transistor Tr2, the amplifier transistor Tr3, and the selection transistor Tr4 are continuously horizontally disposed under the four photodiodes PD1 to PD4.

如圖47A及47B所示，在各個像素R、Gr、Gb、B中，作為光電轉換器的光二極體PD形成於半導體基板153的表面上，且接線層150型成於半導體基板153上，並以層間絕緣膜154夾設於其之間。接線層150包含接線部位155的多數層。又，彩色濾波層157及微透鏡158(亦稱為晶片上透鏡)分層形成於接線層150上。As shown in FIGS. 47A and 47B, in each of the pixels R, Gr, Gb, and B, a photodiode PD as a photoelectric converter is formed on the surface of the semiconductor substrate 153, and the wiring layer 150 is formed on the semiconductor substrate 153. The interlayer insulating film 154 is interposed therebetween. Wiring layer 150 includes a plurality of layers of wiring locations 155. Further, a color filter layer 157 and a microlens 158 (also referred to as a wafer on-wafer) are layered on the wiring layer 150.

此實施例使用接線部位155作為用以獲得光學對稱的調整機構。在此實施例中，突出部位155a自接線層155突出於較上層中。突出部位155a遮蔽第一綠色像素Gb及紅色像素R(其在基層中不受放大器閘極影響)的部份光二極體PD1及PD2。決定突出部位155a之入射光的調整量，亦即突出部位155a與各個光二極體PD1及PD2重疊的部位，以使各個光二極體PD1及PD2的入射光量等於其他光二極體PD3及PD4的入射光量。接線部位155的突出部位155a的佈局對於整個像素部位40中的單位像素群集42為相同。This embodiment uses the wire portion 155 as an adjustment mechanism for obtaining optical symmetry. In this embodiment, the protruding portion 155a protrudes from the wiring layer 155 in the upper layer. The protruding portion 155a shields the partial photodiodes PD1 and PD2 of the first green pixel Gb and the red pixel R which are not affected by the amplifier gate in the base layer. The adjustment amount of the incident light of the protruding portion 155a, that is, the portion where the protruding portion 155a overlaps with the respective photodiodes PD1 and PD2, is determined such that the incident light amount of each of the photodiodes PD1 and PD2 is equal to the incidence of the other photodiodes PD3 and PD4. The amount of light. The layout of the protruding portions 155a of the wiring portion 155 is the same for the unit pixel cluster 42 in the entire pixel portion 40.

其他組構類似於參照圖31A、31B及32所說明者。參照圖46、47A及47B，相似的參考標號指的是在圖31A、31B及32中的相似元件，並省略多餘說明。Other configurations are similar to those described with reference to Figures 31A, 31B and 32. Referring to Figures 46, 47A and 47B, like reference numerals refer to like elements in Figures 31A, 31B and 32, and redundant description is omitted.

利用根據第十實施例的固態影像拾取裝置81，調整未被放大器閘極49影響的像素的接線部位155的突出部位155a的突出量，在此實施例中為第一綠色像素Gb及紅色像素R，藉此可調整入射光量。因此，可減少或是消除第一及第二綠色像素Gb及Gr之間的靈敏度差異且個別像素R、Gr、Gb及B的入射光量可令為相等。又，可減少彩色遮光。因此，可獲得光學對稱，且可提供具有高影像品質的固態影像拾取裝置。With the solid-state image pickup device 81 according to the tenth embodiment, the amount of protrusion of the protruding portion 155a of the wiring portion 155 of the pixel not affected by the amplifier gate 49 is adjusted, which is the first green pixel Gb and the red pixel R in this embodiment. Thereby, the amount of incident light can be adjusted. Therefore, the sensitivity difference between the first and second green pixels Gb and Gr can be reduced or eliminated and the incident light amounts of the individual pixels R, Gr, Gb, and B can be made equal. In addition, color shading can be reduced. Therefore, optical symmetry can be obtained, and a solid-state image pickup device with high image quality can be provided.

11.第十一實施例11. Eleventh Embodiment 固態影像拾取裝置的例示性組構Exemplary organization of solid-state image pickup device

圖50、51A、51B各顯示根據本發明之第十一實施例之固態影像拾取裝置。根據此實施例之固態影像拾取裝置為四像素共用類型的MOS固態影像拾取裝置，其中四個像素共用一個浮動擴散、一個放大器電晶體及一個選擇電晶體。此實施例不使用波導，但使用由聚合矽製成的模擬電極作為調整機構以獲得光學對稱。50, 51A, and 51B each show a solid-state image pickup device according to an eleventh embodiment of the present invention. The solid-state image pickup device according to this embodiment is a four-pixel sharing type MOS solid-state image pickup device in which four pixels share one floating diffusion, one amplifier transistor, and one selection transistor. This embodiment does not use a waveguide, but uses an analog electrode made of a polymerized crucible as an adjustment mechanism to obtain optical symmetry.

首先，為了便於了解第十一實施例，參照圖52、53A、53B說明四像素共用類型的固態影像拾取裝置36的改善之前的比較性範例，其中四個像素共用一個浮動擴散、不具有波導的一個放大器電晶體及一個選擇電晶體。除了固態影像拾取裝置36在光二極體PD(PD1至PD4)之上的區域中不具有波導之外，比較性範例之固態影像拾取裝置36的單位像素群集114類似於圖48、49A及49B所示者，且波導及接線部位的佈局被省略。在固態影像拾取裝置36中，接線部位26的佈局為不對稱。在此範例中，在單位像素群集114中，形成接線部位26已與部份的藍色像素B及第二綠色像素Gr重疊。參照圖52、53A及53B，相似的參考標號指的是與圖48、49A及49B中相似的元件，並省略多餘說明。First, in order to facilitate the understanding of the eleventh embodiment, a comparative example before the improvement of the four-pixel sharing type solid-state image pickup device 36 will be described with reference to FIGS. 52, 53A, and 53B, in which four pixels share one floating diffusion and no waveguide. An amplifier transistor and a selection transistor. The unit pixel cluster 114 of the solid-state image pickup device 36 of the comparative example is similar to that of FIGS. 48, 49A, and 49B except that the solid-state image pickup device 36 does not have a waveguide in a region above the photodiode PD (PD1 to PD4). The display, and the layout of the waveguide and the wiring portion are omitted. In the solid-state image pickup device 36, the layout of the wiring portion 26 is asymmetrical. In this example, in the unit pixel cluster 114, the formation wiring portion 26 has overlapped with a portion of the blue pixel B and the second green pixel Gr. Referring to Figures 52, 53A and 53B, like reference numerals refer to like elements in Figures 48, 49A and 49B, and redundant description is omitted.

如參照比較性範例之固態影像拾取裝置36所述，若接線部位26必然是不對稱的，則入射於藍色像素B及第二綠色像素Gr的部份入射光被接線部位26遮住。入射光量可隨著像素而改變，而造成無法提供光學對稱。As described with reference to the solid-state image pickup device 36 of the comparative example, if the wiring portion 26 is necessarily asymmetrical, part of the incident light incident on the blue pixel B and the second green pixel Gr is blocked by the wiring portion 26. The amount of incident light can vary with the pixel, making it impossible to provide optical symmetry.

根據第十一實施例之固態影像拾取裝置83具有像素部位40，其中四像素共用類型的單位像素群集42以類似於第十實施例所述之方式而組構，其中四個像素共用一個浮動擴散、在光二極體PD之上不具有波導的一個放大器電晶體及一個選擇電晶體。接線部位155的佈局是不對稱的，類似於圖52、53A及53B的比較性範例的方式。特別而言，形成接線部位155以重疊於部份的藍色像素B及第二綠色像素Gr。The solid-state image pickup device 83 according to the eleventh embodiment has a pixel portion 40 in which a unit pixel cluster 42 of a four-pixel sharing type is organized in a manner similar to that described in the tenth embodiment, wherein four pixels share a floating diffusion An amplifier transistor having no waveguide above the photodiode PD and a selection transistor. The layout of the wiring locations 155 is asymmetrical, similar to the manner of the comparative examples of Figures 52, 53A, and 53B. In particular, the wiring portion 155 is formed to overlap the portion of the blue pixel B and the second green pixel Gr.

此實施例使用由聚合矽製成且作為用以獲得光學對稱的調整機構的模擬電極84。模擬電極84係與像素電晶體之閘極同時形成。也就是說，在此實施例中，模擬電極84形成於靠近第一綠色像素Gb及紅色像素R(其未被接線部位155影響)的光二極體PD1及PD2之處。各個模擬電極84係形成於部份入射光會被模擬電極84遮住之位置。決定模擬電極84的入射光的調整量，也就是沿著光二極體PD1及PD2的長度，以使各個光二極體PD1及PD2的光入射量等於其他光二極體PD3及PD4的光入射量。模擬電極84的佈局在整個像素部位40中之單位像素群集42中為相同。This embodiment uses an analog electrode 84 made of polymeric tantalum and used as an adjustment mechanism to obtain optical symmetry. The analog electrode 84 is formed simultaneously with the gate of the pixel transistor. That is, in this embodiment, the dummy electrode 84 is formed near the photodiodes PD1 and PD2 of the first green pixel Gb and the red pixel R which are not affected by the wiring portion 155. Each of the analog electrodes 84 is formed at a position where a part of the incident light is blocked by the dummy electrode 84. The adjustment amount of the incident light of the analog electrode 84, that is, the length of the photodiodes PD1 and PD2, is determined such that the light incident amount of each of the photodiodes PD1 and PD2 is equal to the light incident amount of the other photodiodes PD3 and PD4. The layout of the analog electrodes 84 is the same in the unit pixel cluster 42 throughout the pixel portion 40.

其他組構類似於參照圖46、47A及47B所述者。參照圖50、51A及51B，相似的參考標號指的是圖46、47A及47B中的相似元件，並省略多餘說明。Other configurations are similar to those described with reference to Figures 46, 47A and 47B. Referring to Figures 50, 51A and 51B, like reference numerals refer to like elements in Figures 46, 47A and 47B, and redundant description is omitted.

利用根據第十一實施例之固態影像拾取裝置83，參照圖51A，入射於第二綠色像素Gr之部份入射光L被突出接線部位155遮住，因此，對於第二綠色像素Gr的入射光量減少。相似地，入射於藍色像素B的部份入射光L被接線部位155的突出部位155a遮住，造成藍色像素B的入射光量減少。相比之下，參照圖51B，考慮不被接線部位155影響的第一綠色像素Gb，入射於第一綠色像素Gb的部份入射光L被模擬電極84遮住，造成第一綠色像素Gb的入射光量減少。可藉由控制模擬電極84的尺寸而將入射光量的減少量控制為相等。With the solid-state image pickup device 83 according to the eleventh embodiment, referring to FIG. 51A, part of the incident light L incident on the second green pixel Gr is blocked by the protruding wiring portion 155, and therefore, the amount of incident light for the second green pixel Gr cut back. Similarly, a part of the incident light L incident on the blue pixel B is blocked by the protruding portion 155a of the wiring portion 155, resulting in a decrease in the amount of incident light of the blue pixel B. In contrast, referring to FIG. 51B, considering the first green pixel Gb that is not affected by the wiring portion 155, a portion of the incident light L incident on the first green pixel Gb is blocked by the dummy electrode 84, resulting in the first green pixel Gb. The amount of incident light is reduced. The amount of decrease in the amount of incident light can be controlled to be equal by controlling the size of the analog electrode 84.

利用根據第十一實施例之固態影像拾取裝置83，若接線部位155在單位像素群集42中必然為不對稱的，則可在基層中靠近不被接線部位155影響的像素的位置設置模擬電極84。因此，可獲得光學對稱。亦即，第一及第二綠色像素Gb及Gr之間的靈敏度差異可減少或是消除。又，對個別像素R、Gr、Gb及B的入射光量可為相等。又，可減少彩色遮光。With the solid-state image pickup device 83 according to the eleventh embodiment, if the wiring portion 155 is necessarily asymmetrical in the unit pixel cluster 42, the dummy electrode 84 can be disposed in the base layer near the position of the pixel not affected by the wiring portion 155. . Therefore, optical symmetry can be obtained. That is, the difference in sensitivity between the first and second green pixels Gb and Gr can be reduced or eliminated. Further, the amount of incident light to the individual pixels R, Gr, Gb, and B can be equal. In addition, color shading can be reduced.

12.第十二實施例12. Twelfth embodiment 固態影像拾取裝置之例示性組構Exemplary organization of solid-state image pickup device

圖54、55A及55B各顯示根據本發明之第十二實施例之固態影像拾取裝置。本實施例之固態影像拾取裝置為四像素共用類型的MOS固態影像拾取裝置，其中四個像素共用一個浮動擴散、一個放大器電晶體及一個選擇電晶體。此實施例不使用波導，但使用微透鏡作為調整機構以獲得光學對稱。Figures 54, 55A and 55B each show a solid-state image pickup device according to a twelfth embodiment of the present invention. The solid-state image pickup device of this embodiment is a four-pixel sharing type MOS solid-state image pickup device in which four pixels share one floating diffusion, one amplifier transistor, and one selection transistor. This embodiment does not use a waveguide, but uses a microlens as an adjustment mechanism to obtain optical symmetry.

首先，參照圖56、57A及57B說明在改善之前的四像素共用類型的固態影像拾取裝置37的比較性範例，其中四個像素共用一個浮動據散、不具有波導的一個放大器電晶體及一個選擇電晶體。除了固態影像拾取裝置37在光二極體PD(PD1至PD4)之上的區域中不具有波導之外，比較範例之固態影像拾取裝置37的單位像素群集114類似於圖48、49A及49B所示之組構。參照圖56、57A及57B，相似的參考標號指的是圖48、49A及49B中的相似元件，並省略多餘說明。First, a comparative example of a solid-state image pickup device 37 of a four-pixel sharing type before improvement will be described with reference to FIGS. 56, 57A and 57B, in which four pixels share one floating crystal, one amplifier transistor without a waveguide, and one selection. Transistor. The unit pixel cluster 114 of the solid-state image pickup device 37 of the comparative example is similar to that shown in FIGS. 48, 49A, and 49B except that the solid-state image pickup device 37 does not have a waveguide in a region above the photodiode PD (PD1 to PD4). The organization. Referring to Figures 56, 57A and 57B, like reference numerals refer to like elements in Figures 48, 49A and 49B, and redundant description is omitted.

在比較性範例之固態影像拾取裝置37的單位像素群集114中，參照沿著圖56之直線LVIIA-LVIIA所取的示於圖57A之橫剖面圖，入射於第二綠色像素Gr的部份入射光被基層中的設置於靠近光二極體PD4之處的放大器閘極121遮住。相比之下，參照沿著圖56之直線LVIIB-LVIIB所取的示於圖57B之橫剖面圖，入射於第一綠色像素Gb的入射光不會被基層中的閘極遮住，且入射於光二極體PD1上。入射於藍色像素B的入射光被放大器閘極121遮住。入射於第一綠色像素Gb的入射光不會被放大器閘極121遮住。因此，第一綠色像素Gr上的入射光量不同於綠色像素Gb的入射光量。因此，產生靈敏度差異。又，像素Gr及B、及像素Gb及R之間產生入射光量的差異，則會發生光學不對稱。In the unit pixel cluster 114 of the solid-state image pickup device 37 of the comparative example, referring to the cross-sectional view shown in FIG. 57A taken along the line LVIIA-LVIIA of FIG. 56, the portion incident on the second green pixel Gr is incident. The light is blocked by the amplifier gate 121 disposed in the base layer near the photodiode PD4. In contrast, referring to the cross-sectional view shown in FIG. 57B taken along the line LVIIB-LVIIB of FIG. 56, the incident light incident on the first green pixel Gb is not blocked by the gate in the base layer, and is incident. On the photodiode PD1. The incident light incident on the blue pixel B is blocked by the amplifier gate 121. The incident light incident on the first green pixel Gb is not blocked by the amplifier gate 121. Therefore, the amount of incident light on the first green pixel Gr is different from the amount of incident light of the green pixel Gb. Therefore, a difference in sensitivity is generated. Further, when the pixels Gr and B and the pixels Gb and R have a difference in the amount of incident light, optical asymmetry occurs.

參照圖54、55A及55B，根據第十二實施例之固態影像拾取裝置85包含四像素共用類型的單位像素群集42，其中四個像素共用一個浮動擴散，在光二極體PD上不具有波導的一個放大器電晶體及一個選擇電晶體。四像素共用類型的多數個單位像素群集42排成陣列以形成像素部位40。如上述，單位像素群集42包含四個光二極體PD(PD1至PD4)、四個轉換電晶體Tr(Tr11至Tr14)及單一個浮動擴散FD。更進一步，單位像素群集42包含單一個重設電晶體Tr2、一個放大器電晶體Tr3及一個選擇電晶體Tr4。Referring to FIGS. 54, 55A and 55B, the solid-state image pickup device 85 according to the twelfth embodiment includes a unit pixel cluster 42 of a four-pixel sharing type in which four pixels share one floating diffusion and no waveguide on the photodiode PD. An amplifier transistor and a selection transistor. A plurality of unit pixel clusters 42 of a four pixel sharing type are arrayed to form pixel locations 40. As described above, the unit pixel cluster 42 includes four photodiodes PD (PD1 to PD4), four conversion transistors Tr (Tr11 to Tr14), and a single floating diffusion FD. Further, the unit pixel cluster 42 includes a single reset transistor Tr2, an amplifier transistor Tr3, and a selection transistor Tr4.

如圖55A及55B所示，各個像素R、Gr、Gb、B、作為光電轉換器的光二極體PD係形成於半導體基板153的表面上，且接線層150形成於半導體基板153的表面上，並以層間絕緣膜154夾設於其之間。接線層150包含接線部位155形成的多數層。又，彩色濾波層157及微透鏡158(又稱為晶片上透鏡)堆疊於接線層150上。As shown in FIGS. 55A and 55B, each of the pixels R, Gr, Gb, B, and a photodiode PD as a photoelectric converter are formed on the surface of the semiconductor substrate 153, and the wiring layer 150 is formed on the surface of the semiconductor substrate 153. The interlayer insulating film 154 is interposed therebetween. The wiring layer 150 includes a plurality of layers formed by the wiring portions 155. Further, a color filter layer 157 and microlenses 158 (also referred to as on-wafer lenses) are stacked on the wiring layer 150.

此實施例中之固態影像拾取裝置85使用微透鏡158作為獲得光學對稱的調整機構。在此實施例中，僅將第二綠色像素Gr及藍色像素B(其未受放大器閘極49影響)的微透鏡158位移至透過微透鏡158傳送的入射光L不會被閘極遮住的位置。特別而言，第二綠色像素Gr及藍色像素B的微透鏡158的焦點位移離開放大器閘極49。在整個像素部位40的單位像素群集42中，單位像素群集42中之微透鏡158之佈局為相同。The solid-state image pickup device 85 in this embodiment uses the microlens 158 as an adjustment mechanism that obtains optical symmetry. In this embodiment, only the microlens 158 of the second green pixel Gr and the blue pixel B (which are not affected by the amplifier gate 49) are displaced to the incident light L transmitted through the microlens 158 without being blocked by the gate. s position. In particular, the focus of the microlens 158 of the second green pixel Gr and the blue pixel B is displaced away from the amplifier gate 49. In the unit pixel cluster 42 of the entire pixel portion 40, the layout of the microlenses 158 in the unit pixel cluster 42 is the same.

在第十二實施例中，如圖55A所示，第二綠色像素Gr的微透鏡158位移離開放大器閘極。因此，第二綠色像素Gr的入射光L不會被放大器閘極49遮住，且入射至光二極體PD4上。又，藍色像素B的微透鏡158以類似於第二像素Gr的方式位移。相比之下，第一綠色像素Gb的微透鏡158不會位移，且入射光係入射於光二極體PD1上，而不會被作為基層的閘極影響。又，以類似於第一綠色像素Gb的方式，入射光係入射於紅色像素R上，而不會被作為基層的閘極影響。In the twelfth embodiment, as shown in Fig. 55A, the microlens 158 of the second green pixel Gr is displaced away from the amplifier gate. Therefore, the incident light L of the second green pixel Gr is not blocked by the amplifier gate 49 and is incident on the photodiode PD4. Also, the microlens 158 of the blue pixel B is displaced in a manner similar to the second pixel Gr. In contrast, the microlens 158 of the first green pixel Gb is not displaced, and the incident light is incident on the photodiode PD1 without being affected by the gate as the base layer. Further, in a manner similar to the first green pixel Gb, the incident light is incident on the red pixel R without being affected by the gate as the base layer.

利用根據第十二實施例之固態影像拾取裝置85，可藉由像素Gr及B之微透鏡158之位移而調整光量。因此，可使第一及第二綠色像素Gb及Gr的靈敏度為相等。又，可使個別像素R、Gr、Gb、B之入射光量為相等。又，可減少彩色遮光。因此可獲得光學對稱。With the solid-state image pickup device 85 according to the twelfth embodiment, the amount of light can be adjusted by the displacement of the microlenses 158 of the pixels Gr and B. Therefore, the sensitivities of the first and second green pixels Gb and Gr can be made equal. Further, the amounts of incident light of the individual pixels R, Gr, Gb, and B can be made equal. In addition, color shading can be reduced. Optical symmetry is thus obtained.

13.第十三實施例13. Thirteenth Embodiment 固態影像拾取裝置之例示性組構Exemplary organization of solid-state image pickup device

圖58、59A及59B各顯示根據本發明之第十三實施例之固態影像拾取裝置。此實施例之固態影像拾取裝置為四像素共用類型的MOS固態影像拾取裝置。當根據第十二實施例所提供的光量調整仍無法達成靈敏度差異的充分調整時，此實施例提供改善。Figures 58, 59A and 59B each show a solid-state image pickup device according to a thirteenth embodiment of the present invention. The solid-state image pickup device of this embodiment is a four-pixel sharing type MOS solid-state image pickup device. This embodiment provides an improvement when sufficient adjustment of the sensitivity difference is still not achieved according to the light amount adjustment provided by the twelfth embodiment.

根據第十三實施例之固態影像拾取裝置87包含四像素共用類型的單位像素群集42，其中四個像素共用一個浮動擴散、一個放大器電晶體及一個選擇電晶體，其中第二綠色像素Gr及藍色像素B的微透鏡158位移離開基層中的放大器閘極49。又，第一綠色像素Gb及紅色像素R的微透鏡158位移朝向基層中的接線部位155。The solid-state image pickup device 87 according to the thirteenth embodiment includes a unit pixel cluster 42 of a four-pixel sharing type in which four pixels share one floating diffusion, one amplifier transistor, and one selection transistor, wherein the second green pixel Gr and blue The microlens 158 of the color pixel B is displaced away from the amplifier gate 49 in the base layer. Further, the microlenses 158 of the first green pixel Gb and the red pixel R are displaced toward the wiring portion 155 in the base layer.

利用根據第十三實施例之固態影像拾取裝置87，第二綠色像素Gr及藍色像素B的微透鏡158位移離開放大器閘極49，以移動焦點。因此，可限制入射光量的損失，且可增加靈敏度。相比之下，第一綠色像素Gb及紅色像素R的微透鏡158位移朝向接線部位155，以實施調整而減少接線部位155造成的入射光量減少。因此，靈敏度被減少。因此，第一及第二綠色像素Gb及Gr之間的靈敏度差異減少。個別像素R、Gr、Gb及B的入射光量可為相等。又，可減少彩色遮光。因此，可獲得光學對稱。With the solid-state image pickup device 87 according to the thirteenth embodiment, the microlenses 158 of the second green pixel Gr and the blue pixel B are displaced away from the amplifier gate 49 to move the focus. Therefore, the loss of the amount of incident light can be limited, and the sensitivity can be increased. In contrast, the microlens 158 of the first green pixel Gb and the red pixel R are displaced toward the wiring portion 155 to perform adjustment to reduce the amount of incident light caused by the wiring portion 155. Therefore, the sensitivity is reduced. Therefore, the sensitivity difference between the first and second green pixels Gb and Gr is reduced. The incident light amounts of the individual pixels R, Gr, Gb, and B may be equal. In addition, color shading can be reduced. Therefore, optical symmetry can be obtained.

14.第十四實施例14. Fourteenth Embodiment 固態影像拾取裝置的例示性組構Exemplary organization of solid-state image pickup device

儘管並未顯示，如第四至第十三實施例其中任一者所述之具有用以獲得光學對稱的組構的固態影像拾取裝置可應用於CCD固態影像拾取裝置中。即使當該種組構應用於CCD固態影像拾取裝置中，仍可實施如上述之光量調整，且可對個別像素獲得光學對稱。Although not shown, the solid-state image pickup device having the configuration for obtaining an optical symmetry as described in any of the fourth to thirteenth embodiments can be applied to a CCD solid-state image pickup device. Even when such a configuration is applied to a CCD solid-state image pickup device, the light amount adjustment as described above can be performed, and optical symmetry can be obtained for individual pixels.

在上述實施例中，該組構可應用於二像素共用類型的固態影像拾取裝置，其中兩個像素共用一個浮動擴散、一個放大器電晶體及一個選擇電晶體，或是應用於四像素共用類型，其中四個像素共用一個浮動擴散、一個放大器電晶體及一個選擇電晶體。然而，該組構可應用於另一數目的像素共用類型的固態影像拾取裝置，其中另一數目的像素共用一個浮動擴散、一個放大器電晶體及一個選擇電晶體。In the above embodiment, the fabric can be applied to a two-pixel sharing type solid-state image pickup device in which two pixels share a floating diffusion, an amplifier transistor and a selection transistor, or are applied to a four-pixel sharing type. Four of the pixels share a floating diffusion, an amplifier transistor, and a selection transistor. However, the configuration can be applied to another number of pixel-sharing type solid-state image pickup devices in which another number of pixels share a floating diffusion, an amplifier transistor, and a selection transistor.

在上述實施例中，該組構係應用於具有Bayer圖案的彩色濾波器101的固態影像拾取裝置中。然而，該組構可應用於具有如圖61所示之斜向陣列的蜂巢圖案的彩色濾波層102的固態影像拾取裝置中。In the above embodiment, the configuration is applied to a solid-state image pickup device having a color filter 101 of a Bayer pattern. However, the configuration can be applied to a solid-state image pickup device having a color filter layer 102 of a honeycomb pattern of an oblique array as shown in FIG.

在上述實施例中，該組構應用於彩色固態影像拾取裝置中。然而，該組構可應用於單色(例如黑白)的固態影像拾取裝置中。在此情況中，可使用波導、接線部位、模擬電極、晶片上透鏡等作為調整機構。In the above embodiment, the fabric is applied to a color solid-state image pickup device. However, the fabric can be applied to a solid-state image pickup device of a single color (for example, black and white). In this case, a waveguide, a wiring portion, an analog electrode, a lens on a wafer, or the like can be used as the adjustment mechanism.

15.第十五實施例15. Fifteenth Embodiment 電子裝置之例示性組構Exemplary organization of electronic devices

根據前述實施例之任一者的固態影像拾取裝置可應用於電子裝置中，例如相機系統，如數位相機或是錄影機；具有影像拾取功能的手機；或是具有影像拾取功能的另一裝置。The solid-state image pickup device according to any of the foregoing embodiments can be applied to an electronic device such as a camera system such as a digital camera or a video recorder; a mobile phone having an image pickup function; or another device having an image pickup function.

圖66顯示第十五實施例，其中固態影像拾取裝置應用於做為電子裝置之一例的相機中。在此實施例中之相機為例如可以獲得靜態影像或是動態影像的錄影機。此實施例中之相機91包含固態影像拾取裝置92、光學系統93(其將入射光引導至固態影像拾取裝置92之光感應器)、及快門裝置94。又，相機91包含驅動電路95及信號處理電路96，其處理固態影像拾取裝置92的輸出信號。Fig. 66 shows a fifteenth embodiment in which a solid-state image pickup device is applied to a camera as an example of an electronic device. The camera in this embodiment is, for example, a video recorder that can obtain still images or motion pictures. The camera 91 in this embodiment includes a solid-state image pickup device 92, an optical system 93 (which guides incident light to a light sensor of the solid-state image pickup device 92), and a shutter device 94. Further, the camera 91 includes a drive circuit 95 and a signal processing circuit 96 that processes an output signal of the solid-state image pickup device 92.

固態影像拾取裝置92可為根據上述之實施例其中任一者之固態影像拾取裝置。光學系統(光學透鏡)93使物體產生的影像光(入射光)將聚焦於固態影像拾取裝置92之影像拾取表面上。因此，信號電荷累積於固態影像拾取裝置92中一段時間。光學系統93可為包含多數個光學透鏡的光學透鏡系統。快門裝置94控制固態影像拾取裝置92的發光時間及遮光時間。驅動電路95供應驅動信號以控制固態影像拾取裝置92之轉換操作及快門裝置94之快門操作。為了回應從驅動電路95供應之驅動信號(時序信號)，轉換固態影像拾取裝置產生的信號。信號處理電路96實施各種信號處理。信號處理之後的視頻信號儲存於儲存媒體(例如記憶體)中或是被輸出至螢幕。The solid-state image pickup device 92 may be a solid-state image pickup device according to any of the above embodiments. The optical system (optical lens) 93 causes the image light (incident light) generated by the object to be focused on the image pickup surface of the solid-state image pickup device 92. Therefore, signal charges are accumulated in the solid-state image pickup device 92 for a while. Optical system 93 can be an optical lens system that includes a plurality of optical lenses. The shutter device 94 controls the lighting time and the shading time of the solid-state image pickup device 92. The drive circuit 95 supplies a drive signal to control the switching operation of the solid-state image pickup device 92 and the shutter operation of the shutter device 94. In response to the drive signal (timing signal) supplied from the drive circuit 95, the signal generated by the solid-state image pickup device is converted. Signal processing circuit 96 performs various signal processing. The video signal after signal processing is stored in a storage medium (such as a memory) or output to a screen.

採用根據第十五實施例之電子裝置，例如相機，則可獲得例如光學對稱，以使固態影像拾取裝置92之綠色像素Gb及Gr之靈敏度可為相等，如此則可提高影像品質。因此，可提供可靠的電子裝置。With the electronic device according to the fifteenth embodiment, for example, a camera, for example, optical symmetry can be obtained so that the sensitivity of the green pixels Gb and Gr of the solid-state image pickup device 92 can be equal, and thus the image quality can be improved. Therefore, a reliable electronic device can be provided.

前述之任一實施例可應用另一實施例。如此則可獲得光學對稱。Another embodiment can be applied to any of the foregoing embodiments. In this way, optical symmetry can be obtained.

本申請案包含有關揭示於2009年3月30日於日本專利局申請的日本優先權專利申請案JP第2009-081100號之標的物，及於2009年10月19日於日本專利局申請的日本優先權專利申請案JP第2009-240774號之標的物。在此以參考資料方式合倂其之全部內容。The present application contains the subject matter of Japanese Priority Patent Application No. 2009-081100, filed on Jan. 30, 2009, and the Japanese Patent Application No. 2009-081100, filed on Jan. Priority Patent Application No. 2009-240774. The entire contents of this document are hereby incorporated by reference.

熟知本技藝者當可了解，取決於設計需求及其他因素，可能會有各種改型、組合、次組合及變更等，該等仍係落在後附之申請專利範圍或是其均等物的範圍中。It will be appreciated by those skilled in the art that, depending upon design requirements and other factors, there may be various modifications, combinations, sub-combinations and alterations, which are still within the scope of the appended claims or their equivalents. in.

1．．．MOS固態影像拾取裝置1. . . MOS solid state image pickup device

1A．．．固態影像拾取裝置1A. . . Solid-state image pickup device

1B．．．固態影像拾取裝置1B. . . Solid-state image pickup device

2．．．單位像素群集2. . . Unit pixel cluster

3．．．轉換閘極3. . . Switching gate

4．．．重設閘極4. . . Reset gate

5．．．源極區域5. . . Source area

6．．．放大器閘極6. . . Amplifier gate

7．．．源極區域7. . . Source area

8．．．汲極區域8. . . Bungee area

9．．．接線部位9. . . Wiring part

10．．．固態影像拾取裝置10. . . Solid-state image pickup device

11．．．半導體基板11. . . Semiconductor substrate

12．．．光電轉換器12. . . Photoelectric converter

13．．．接線層13. . . Wiring layer

14．．．層間絕緣膜14. . . Interlayer insulating film

15．．．接線部位15. . . Wiring part

16．．．波導16. . . waveguide

16A．．．第一波導16A. . . First waveguide

16B．．．第二波導16B. . . Second waveguide

17．．．彩色濾波層17. . . Color filter layer

18．．．微透鏡18. . . Microlens

19．．．波導孔19. . . Waveguide hole

20．．．像素部位20. . . Pixel part

21．．．單位像素twenty one. . . Unit pixel

22．．．單位像素群集twenty two. . . Unit pixel cluster

23．．．波導twenty three. . . waveguide

24．．．半導體基板twenty four. . . Semiconductor substrate

25．．．層間絕緣膜25. . . Interlayer insulating film

26．．．接線部位26. . . Wiring part

27．．．閘極絕緣膜27. . . Gate insulating film

28．．．彩色濾波層28. . . Color filter layer

29．．．微透鏡29. . . Microlens

31．．．轉換閘極31. . . Switching gate

33．．．固態影像拾取裝置33. . . Solid-state image pickup device

34．．．固態影像拾取裝置34. . . Solid-state image pickup device

35．．．固態影像拾取裝置35. . . Solid-state image pickup device

36．．．固態影像拾取裝置36. . . Solid-state image pickup device

37．．．固態影像拾取裝置37. . . Solid-state image pickup device

38．．．固態影像拾取裝置38. . . Solid-state image pickup device

40．．．像素部位40. . . Pixel part

42．．．單位像素群集42. . . Unit pixel cluster

43．．．轉換閘極43. . . Switching gate

44．．．擴散區域44. . . Diffusion zone

45．．．擴散區域45. . . Diffusion zone

46．．．擴散區域46. . . Diffusion zone

47．．．擴散區域47. . . Diffusion zone

48．．．重設閘極48. . . Reset gate

49．．．放大器閘極49. . . Amplifier gate

51．．．光阻膜51. . . Photoresist film

52．．．開口52. . . Opening

53．．．波導材料膜53. . . Waveguide material film

54．．．平坦絕緣膜54. . . Flat insulating film

55．．．透鏡形成膜55. . . Lens forming film

56．．．光阻圖案56. . . Resistive pattern

57．．．第一波導材料膜57. . . First waveguide material film

58．．．第二波導材料膜58. . . Second waveguide material film

61．．．聚合矽電極61. . . Polymeric germanium electrode

63．．．固態影像拾取裝置63. . . Solid-state image pickup device

65．．．固態影像拾取裝置65. . . Solid-state image pickup device

67．．．固態影像拾取裝置67. . . Solid-state image pickup device

69．．．固態影像拾取裝置69. . . Solid-state image pickup device

70．．．轉換閘極70. . . Switching gate

71．．．單位像素群集71. . . Unit pixel cluster

72．．．重設閘極72. . . Reset gate

73．．．源極區域73. . . Source area

74．．．放大器閘極74. . . Amplifier gate

75．．．源極區域75. . . Source area

76．．．汲極區域76. . . Bungee area

77．．．接線部位77. . . Wiring part

78．．．波導78. . . waveguide

81．．．固態影像拾取裝置81. . . Solid-state image pickup device

83．．．固態影像拾取裝置83. . . Solid-state image pickup device

84．．．模擬電極84. . . Analog electrode

85．．．固態影像拾取裝置85. . . Solid-state image pickup device

87．．．固態影像拾取裝置87. . . Solid-state image pickup device

91．．．相機91. . . camera

92．．．固態影像拾取裝置92. . . Solid-state image pickup device

93．．．光學系統93. . . Optical system

94．．．快門裝置94. . . Shutter device

95．．．驅動電路95. . . Drive circuit

96．．．信號處理電路96. . . Signal processing circuit

101．．．Bayer圖案彩色濾波器101. . . Bayer pattern color filter

102．．．彩色濾波層102. . . Color filter layer

111．．．波導111. . . waveguide

113．．．MOS固態影像拾取裝置113. . . MOS solid state image pickup device

114．．．單位像素群集114. . . Unit pixel cluster

115．．．轉換閘極115. . . Switching gate

116．．．擴散區域116. . . Diffusion zone

117．．．擴散區域117. . . Diffusion zone

118．．．擴散區域118. . . Diffusion zone

119．．．擴散區域119. . . Diffusion zone

120．．．重設閘極120. . . Reset gate

121．．．放大器閘極121. . . Amplifier gate

122．．．選擇閘極122. . . Select gate

131．．．閘極絕緣膜131. . . Gate insulating film

141．．．阻障金屬層141. . . Barrier metal layer

142．．．防擴散膜142. . . Anti-diffusion film

150．．．接線層150. . . Wiring layer

151．．．選擇閘極151. . . Select gate

152．．．波導152. . . waveguide

153．．．半導體基板153. . . Semiconductor substrate

154．．．層間絕緣膜154. . . Interlayer insulating film

155．．．接線部位155. . . Wiring part

155a．．．突出部位155a. . . Protruding part

157．．．彩色濾波層157. . . Color filter layer

158．．．微透鏡158. . . Microlens

161．．．固態影像拾取裝置161. . . Solid-state image pickup device

200．．．影像拾取裝置200. . . Image pickup device

201．．．影像拾取單元201. . . Image pickup unit

202．．．光線聚集光學單元202. . . Light concentrating optical unit

203．．．信號處理單元203. . . Signal processing unit

210．．．固態影像拾取裝置210. . . Solid-state image pickup device

圖1為根據先前技術，顯示二像素共用類型的例示性固態影像拾取裝置的主要部位的概略組構圖，其中兩個像素共用一個浮動擴散、一個放大器電晶體、及一個選擇電晶體；1 is a schematic block diagram showing a main portion of an exemplary solid-state image pickup device of a two-pixel sharing type according to the prior art, wherein two pixels share a floating diffusion, an amplifier transistor, and a selection transistor;

圖2為根據先前技術，顯示另一種二像素共用類型的例示性固態影像拾取裝置的主要部位的概略組構圖，其中兩個像素共用一個浮動擴散、一個放大器電晶體、及一個選擇電晶體；2 is a schematic block diagram showing a main portion of an exemplary solid-state image pickup device of another two-pixel sharing type according to the prior art, wherein two pixels share a floating diffusion, an amplifier transistor, and a selection transistor;

圖3A到3C為根據本發明之第一實施例，顯示固態影像拾取裝置之第一例示性組構的概略橫剖面圖及平面佈局圖；3A to 3C are schematic cross-sectional views and plan layout views showing a first exemplary configuration of a solid-state image pickup device according to a first embodiment of the present invention;

圖4A及4B為根據本發明之一實施例，顯示計算瞳孔校正量的例示性方法的概略橫剖面圖；4A and 4B are schematic cross-sectional views showing an exemplary method of calculating a pupil correction amount, in accordance with an embodiment of the present invention;

圖5A及5B為根據先前技術，顯示固態影像拾取裝置的例示性組構的概略橫剖面圖；5A and 5B are schematic cross-sectional views showing an exemplary configuration of a solid-state image pickup device according to the prior art;

圖6A及6B為根據先前技術，顯示計算瞳孔校正量的例示性方法的概略橫剖面圖；6A and 6B are schematic cross-sectional views showing an exemplary method of calculating a pupil correction amount according to the prior art;

圖7A到7C為顯示個別色彩之波導的概略橫剖面圖的瞳孔校正；7A to 7C are pupil corrections showing a schematic cross-sectional view of a waveguide of an individual color;

圖8為根據本發明之第一實施例，顯示固態影像拾取裝置之第二例示性組構的平面佈局圖；Figure 8 is a plan layout view showing a second exemplary configuration of a solid-state image pickup device according to a first embodiment of the present invention;

圖9A到9C為根據本發明之第一實施例，顯示固態影像拾取裝置的第二例示性組構的概略橫剖面圖；9A to 9C are schematic cross-sectional views showing a second exemplary configuration of a solid-state image pickup device according to a first embodiment of the present invention;

圖10A到10D為根據本發明之第一實施例，顯示固態影像拾取裝置的第三例示性組構的概略橫剖面圖；10A to 10D are schematic cross-sectional views showing a third exemplary configuration of a solid-state image pickup device according to a first embodiment of the present invention;

圖11為根據本發明之第一實施例，顯示固態影像拾取裝置之第三例示性組構的概略橫剖面圖；Figure 11 is a schematic cross-sectional view showing a third exemplary configuration of a solid-state image pickup device according to a first embodiment of the present invention;

圖12為根據本發明之第二實施例，顯示固態影像拾取裝置之第一例示性製造方法之製造步驟的橫剖面圖；Figure 12 is a cross-sectional view showing the manufacturing steps of the first exemplary manufacturing method of the solid-state image pickup device according to the second embodiment of the present invention;

圖13為顯示在固態影像拾取裝置之第一例示性製造方法中的製造步驟的橫剖面圖；Figure 13 is a cross-sectional view showing a manufacturing step in a first exemplary manufacturing method of the solid-state image pickup device;

圖14為顯示在固態影像拾取裝置之第一例示性製造方法中的製造步驟的橫剖面圖；Figure 14 is a cross-sectional view showing a manufacturing step in a first exemplary manufacturing method of the solid-state image pickup device;

圖15為顯示在固態影像拾取裝置之第一例示性製造方法中的製造步驟的橫剖面圖；Figure 15 is a cross-sectional view showing a manufacturing step in a first exemplary manufacturing method of the solid-state image pickup device;

圖16為顯示固態影像拾取裝置之第一例示性製造方法的製造步驟的橫剖面圖；Figure 16 is a cross-sectional view showing the manufacturing steps of the first exemplary manufacturing method of the solid-state image pickup device;

圖17為顯示固態影像拾取裝置之第一例示性製造方法的製造步驟的橫剖面圖；Figure 17 is a cross-sectional view showing a manufacturing step of a first exemplary manufacturing method of the solid-state image pickup device;

圖18為顯示固態影像拾取裝置之第一例示性製造方法的製造步驟的橫剖面圖；Figure 18 is a cross-sectional view showing the manufacturing steps of the first exemplary manufacturing method of the solid-state image pickup device;

圖19為顯示顯示固態影像拾取裝置之第一例示性製造方法的製造步驟的橫剖面圖；Figure 19 is a cross-sectional view showing the manufacturing steps of the first exemplary manufacturing method of the solid-state image pickup device;

圖20為顯示固態影像拾取裝置之第一例示性製造方法的製造步驟的橫剖面圖；Figure 20 is a cross-sectional view showing a manufacturing step of a first exemplary manufacturing method of the solid-state image pickup device;

圖21為顯示固態影像拾取裝置之第一例示性製造方法的製造步驟的橫剖面圖；21 is a cross-sectional view showing a manufacturing step of a first exemplary manufacturing method of the solid-state image pickup device;

圖22為顯示固態影像拾取裝置之第二例示性製造方法的製造步驟的橫剖面圖；Figure 22 is a cross-sectional view showing a manufacturing step of a second exemplary manufacturing method of the solid-state image pickup device;

圖23為顯示固態影像拾取裝置之第二例示性製造方法的製造步驟的橫剖面圖；Figure 23 is a cross-sectional view showing a manufacturing step of a second exemplary manufacturing method of the solid-state image pickup device;

圖24為顯示固態影像拾取裝置之第二例示性製造方法的製造步驟的橫剖面圖；Figure 24 is a cross-sectional view showing a manufacturing step of a second exemplary manufacturing method of the solid-state image pickup device;

圖25為顯示固態影像拾取裝置之第二例示性製造方法的製造步驟的橫剖面圖；Figure 25 is a cross-sectional view showing a manufacturing step of a second exemplary manufacturing method of the solid-state image pickup device;

圖26為顯示固態影像拾取裝置之第二例示性製造方法的製造步驟的橫剖面圖；Figure 26 is a cross-sectional view showing a manufacturing step of a second exemplary manufacturing method of the solid-state image pickup device;

圖27為顯示固態影像拾取裝置之第二例示性製造方法的製造步驟的橫剖面圖；Figure 27 is a cross-sectional view showing a manufacturing step of a second exemplary manufacturing method of the solid-state image pickup device;

圖28為顯示固態影像拾取裝置之第二例示性製造方法的製造步驟的橫剖面圖；28 is a cross-sectional view showing a manufacturing step of a second exemplary manufacturing method of the solid-state image pickup device;

圖29為顯示根據本發明之第三實施例，範例影像拾取裝置之方塊圖；Figure 29 is a block diagram showing an exemplary image pickup apparatus according to a third embodiment of the present invention;

圖30顯示為根據本發明之第四實施例，固態影像拾取裝置中之像素部位的概略組構圖；Figure 30 is a diagram showing a schematic configuration of a pixel portion in a solid-state image pickup device according to a fourth embodiment of the present invention;

圖31A及31B為顯示根據本發明之第四實施例，固態影像拾取裝置之主要部份之概略組構圖；31A and 31B are schematic diagrams showing the main components of a solid-state image pickup device according to a fourth embodiment of the present invention;

圖32為沿著圖31A中之直線XXXII-XXXII所取的橫剖面圖；Figure 32 is a cross-sectional view taken along line XXXII-XXXII in Figure 31A;

圖33為根據圖31A及31B所示之第四實施例的綠色像素Gb及Gr的波長及輸出圖；Figure 33 is a diagram showing wavelengths and outputs of green pixels Gb and Gr according to the fourth embodiment shown in Figures 31A and 31B;

圖34A及34B為顯示根據本發明之第五實施例，固態影像拾取裝置之主要部份之概略組構圖；34A and 34B are schematic diagrams showing the main components of a solid-state image pickup device according to a fifth embodiment of the present invention;

圖35為顯示根據本發明之第六實施例，固態影像拾取裝置之主要部份之概略組構圖；Figure 35 is a schematic block diagram showing the main part of a solid-state image pickup device according to a sixth embodiment of the present invention;

圖36A及36B為顯示根據第六實施例，固態影像拾取裝置之主要部份的組構圖，以解釋波導之移動；36A and 36B are views showing a configuration of a main portion of a solid-state image pickup device according to a sixth embodiment to explain the movement of the waveguide;

圖37為顯示根據本發明之第七實施例，固態影像拾取裝置之主要部份的概略組構圖；37 is a schematic block diagram showing the main part of a solid-state image pickup device according to a seventh embodiment of the present invention;

圖38為顯示根據比較性範例之固態影像拾取裝置之主要部份的組構圖，以解釋第七實施例；38 is a block diagram showing a main part of a solid-state image pickup device according to a comparative example to explain a seventh embodiment;

圖39A及39B為顯示根據本發明之第八實施例，固態影像拾取裝置之主要部份的概略組構圖；39A and 39B are schematic block diagrams showing the main parts of a solid-state image pickup device according to an eighth embodiment of the present invention;

圖40A到40C為顯示根據第八實施例，固態影像拾取裝置之主要部份的橫剖面圖，以解釋波導之瞳孔校正；40A to 40C are cross-sectional views showing main parts of a solid-state image pickup device according to an eighth embodiment to explain pupil correction of a waveguide;

圖41A到41C為顯示根據第八實施例，固態影像拾取裝置之主要部份的橫剖面圖，以解釋波導之瞳孔校正；41A to 41C are cross-sectional views showing main parts of a solid-state image pickup device according to an eighth embodiment to explain pupil correction of a waveguide;

圖42A及42B為顯示根據第八實施例，固態影像拾取裝置之主要部份的平面圖，以解釋波導之瞳孔校正；42A and 42B are plan views showing main parts of a solid-state image pickup device according to an eighth embodiment to explain pupil correction of a waveguide;

圖43為顯示根據第八實施例，固態影像拾取裝置之像素部位的平面圖，以解釋波導之瞳孔校正；43 is a plan view showing a pixel portion of a solid-state image pickup device according to an eighth embodiment to explain pupil correction of a waveguide;

圖44為顯示根據本發明之第九實施例，固態影像拾取裝置之主要部份的概略組構圖；Figure 44 is a schematic block diagram showing the main part of a solid-state image pickup device according to a ninth embodiment of the present invention;

圖45為顯示根據比較性範例，固態影像拾取裝置之主要部份的組構圖，以解釋第九實施例；45 is a block diagram showing a main part of a solid-state image pickup device according to a comparative example to explain a ninth embodiment;

圖46為顯示根據本發明之第十實施例，固態影像拾取裝置之主要部份的概略組構圖；Figure 46 is a schematic block diagram showing the main part of a solid-state image pickup device according to a tenth embodiment of the present invention;

圖47A及47B為顯示沿著圖46A中之直線XLVIIA-XLVIIA及直線XLVIIB-XLVIIB所取的概略橫剖面圖；47A and 47B are schematic cross-sectional views taken along line XLVIIA-XLVIIA and line XLVIIB-XLVIIB in Fig. 46A;

圖48為顯示根據比較性範例，固態影像拾取裝置之主要部份的組構圖，以解釋第十實施例；48 is a block diagram showing a main part of a solid-state image pickup device according to a comparative example to explain a tenth embodiment;

圖49A及49B分別為沿著圖48中之直線XLIXA-XLIXA及直線XLIXB-XLIXB所取之概略橫剖面圖；49A and 49B are schematic cross-sectional views taken along the line XLIXA-XLIXA and the line XLIXB-XLIXB in Fig. 48, respectively;

圖50為顯示根據本發明之第十一實施例，固態影像拾取裝置之主要部份的概略組構圖；Figure 50 is a schematic block diagram showing the main part of a solid-state image pickup device according to an eleventh embodiment of the present invention;

圖51A及51B分別為沿著圖50中之直線LIA-LIA及直線LIB-LIB所取的概略橫剖面圖；51A and 51B are schematic cross-sectional views taken along line LIA-LIA and line LIB-LIB in Fig. 50, respectively;

圖52為顯示根據比較性範例，固態影像拾取裝置之主要部份的組構圖，以解釋第十一實施例；Figure 52 is a block diagram showing the main part of a solid-state image pickup device according to a comparative example to explain the eleventh embodiment;

圖53A及53B分別為沿著圖52中之直線LIIIA-LIIIA及直線LIIIB-LIIIB所取的概略橫剖面圖；53A and 53B are schematic cross-sectional views taken along line LIIIA-LIIIA and line LIIIB-LIIIB in Fig. 52, respectively;

圖54為顯示根據本發明之第十二實施例，固態影像拾取裝置之主要部份的概略組構圖；Figure 54 is a schematic block diagram showing the main part of a solid-state image pickup device according to a twelfth embodiment of the present invention;

圖55A及55B分別為沿著圖54中之直線LVA-LVA及直線LVB-LVB所取之概略橫剖面圖；55A and 55B are schematic cross-sectional views taken along line LVA-LVA and line LVB-LVB in Fig. 54, respectively;

圖56為顯示根據比較性範例，固態影像拾取裝置之主要部份的組構圖，以解釋第十二實施例；Figure 56 is a block diagram showing the main part of a solid-state image pickup device according to a comparative example to explain the twelfth embodiment;

圖57A及57B分別為沿著圖56中之直線LVIIA-LVIIA及直線LVIIB-LVIIB所取的概略橫剖面圖；57A and 57B are schematic cross-sectional views taken along line LVIIA-LVIIA and line LVIIB-LVIIB in Fig. 56, respectively;

圖58為顯示根據本發明之第十三實施例，固態影像拾取裝置之主要部份的概略組構圖；Figure 58 is a schematic block diagram showing the main part of a solid-state image pickup device according to a thirteenth embodiment of the present invention;

圖59A及59B分別為沿著圖58中之直線LIXA-LIXA及直線LIXB-LIXB所取的概略橫剖面圖；59A and 59B are schematic cross-sectional views taken along line LIXA-LIXA and line LIBB-LIXB in Fig. 58, respectively;

圖60為顯示根據本發明之第十四實施例，具有Bayer圖案之彩色濾波層之概略組構圖，以作為固態影像拾取裝置之例示性彩色濾波器；Figure 60 is a diagram showing a schematic composition of a color filter layer having a Bayer pattern as an exemplary color filter of a solid-state image pickup device according to a fourteenth embodiment of the present invention;

圖61為顯示根據本發明之第十四實施例，具有蜂巢圖案之彩色濾波器之概略組構圖，作為固態影像拾取裝置之另一例示性彩色濾波器；Figure 61 is a diagram showing a schematic configuration of a color filter having a honeycomb pattern as another exemplary color filter of a solid-state image pickup device according to a fourteenth embodiment of the present invention;

圖62為顯示根據比較性範例，固態影像拾取裝置之主要部份的概略組構圖；62 is a schematic block diagram showing a main part of a solid-state image pickup device according to a comparative example;

圖63為沿著圖62中之直線LXIII-LXIII所取之橫剖面圖；Figure 63 is a cross-sectional view taken along line LXIII-LXIII of Figure 62;

圖64為顯示根據圖62所示之比較性範例，繪示綠色像素Gb及Gr的波長及輸出的圖表；64 is a graph showing wavelengths and outputs of green pixels Gb and Gr according to the comparative example shown in FIG. 62;

圖65A及65B為顯示根據比較性範例，固態影像拾取裝置之主要部份的概略組構圖；及65A and 65B are schematic diagrams showing the main components of a solid-state image pickup device according to a comparative example; and

圖66為顯示根據本發明之第十五實施例，電子裝置之概略組構圖。Figure 66 is a schematic block diagram showing an electronic device according to a fifteenth embodiment of the present invention.

12．．．光電轉換器12. . . Photoelectric converter

15．．．接線部位15. . . Wiring part

16．．．波導16. . . waveguide

17．．．彩色濾波層17. . . Color filter layer

18．．．微透鏡18. . . Microlens

21．．．單位像素twenty one. . . Unit pixel

Claims (16)

一種固態影像拾取裝置，包含：一像素部位，由以在半導體基板之行及列方向排列成陣列的單位像素所形成，一單位像素群集，其中該單位像素群集包含一第一單位像素，包含其上入射具有一第一波長的光線的該光電轉換器，該光線由該彩色濾波層分離，一第二單位像素，包含其上入射具有一第二波長的光線的該光電轉換器，該光線由該彩色濾波層分離，該第二坡長小於該第一波長，及一第三單位像素，包含其上入射具有一第三波長的光線的該光電轉換器，該光線由該彩色濾波層分離，該第三波長大於該第一波長，及其中對於該單位像素群集中的該光電轉換器而言，各該波導的一中央軸相對於對應的光電轉換器的一中心的一位移量隨著該彩色濾波層分離的光線的波長越小而漸小，其中各該單位像素包含一光電轉換器，形成於該半導體基板上並將入射光轉換為信號電荷，一波導，形成於該光電轉換器之上並引導該入射光至該光電轉換器，及一微透鏡，形成於該波導之上並引導該入射光至該波導之光入射側的一端，及 其中該波導具有一圓柱形本體，具有自光入射側的該端至該光出口側的一端的恆定剖面，且設置成使自該微透鏡入射於該波導之光入射側的該端的入射光線中心係對準於該波導的一中央軸。 A solid-state image pickup device comprising: a pixel portion formed by unit pixels arranged in an array in a row and column direction of a semiconductor substrate, wherein the unit pixel cluster comprises a first unit pixel, including a photoelectric converter having a light having a first wavelength incident thereon, the light being separated by the color filter layer, a second unit pixel comprising the photoelectric converter on which light having a second wavelength is incident, the light being Separating the color filter layer, the second slope length is smaller than the first wavelength, and a third unit pixel includes the photoelectric converter on which light having a third wavelength is incident, and the light is separated by the color filter layer. The third wavelength is greater than the first wavelength, and wherein for the photoelectric converter in the unit pixel cluster, a displacement amount of a central axis of each of the waveguides relative to a center of the corresponding photoelectric converter follows The wavelength of the light separated by the color filter layer is smaller and smaller, and each of the unit pixels includes a photoelectric converter formed on the semiconductor substrate and inserted into Converting light into signal charge, a waveguide formed on the photoelectric converter and guiding the incident light to the photoelectric converter, and a microlens formed on the waveguide and guiding the incident light to the waveguide One end of the side, and Wherein the waveguide has a cylindrical body having a constant cross section from the end on the light incident side to the one end on the light exit side, and is disposed such that the incident light center from the end of the light incident side of the waveguide is incident from the microlens It is aligned to a central axis of the waveguide. 如申請專利範圍第1項的固態影像拾取裝置，更包含：一彩色濾波層，形成於該波導與該微透鏡之間並分離該入射光，其中對於該微透鏡及該彩色濾波層基於該入射光的一參考色彩而實施瞳孔校正。 The solid-state image pickup device of claim 1, further comprising: a color filter layer formed between the waveguide and the microlens and separating the incident light, wherein the microlens and the color filter layer are based on the incident A pupil correction is performed with a reference color of light. 如申請專利範圍第1項的固態影像拾取裝置，其中對於具有相同波長的入射光入射於該像素部位中的該光電轉換器而言，各該波導的該中央軸相對於對應的光電轉換器的中心的一位移量隨著自該像素部位的一中心向外而漸大。 The solid-state image pickup device of claim 1, wherein, for the photoelectric converter having incident light of the same wavelength incident on the pixel portion, the central axis of each of the waveguides is opposite to the corresponding photoelectric converter A displacement amount of the center gradually increases as it goes outward from a center of the pixel portion. 如申請專利範圍第1項的固態影像拾取裝置，其中對於距離該像素部位的一中心相同距離的該光電轉換器而言，各該波導的該中央軸相對於對應的光電轉換器的中心的一位移量隨著光線的波長越長而漸小，該光線是由該彩色濾波層分離且入射於該光電轉換器上。 The solid-state image pickup device of claim 1, wherein for the photoelectric converter having the same distance from a center of the pixel portion, the central axis of each of the waveguides is opposite to a center of the corresponding photoelectric converter The amount of displacement is gradually reduced as the wavelength of the light is longer, and the light is separated by the color filter layer and incident on the photoelectric converter. 如申請專利範圍第1項的固態影像拾取裝置，其中該波導的直徑容許從該波導的該光出口側的該端的該入射光被發射至該光電轉換器的一表面的區域內。 A solid-state image pickup device according to claim 1, wherein the diameter of the waveguide allows the incident light from the end of the light exit side of the waveguide to be emitted into a region of a surface of the photoelectric converter. 如申請專利範圍第1項的固態影像拾取裝置， 其中該波導包含一第一波導，界定該波導的一周圍部位，及一第二波導，形成於該第一波導之內，且折射率低於該第一波導的折射率。 A solid-state image pickup device as claimed in claim 1 The waveguide includes a first waveguide defining a surrounding portion of the waveguide, and a second waveguide formed within the first waveguide and having a refractive index lower than a refractive index of the first waveguide. 一種影像拾取裝置，包含：一光線聚集光學單元，聚集入射光線；一影像拾取單元，包含一固態影像拾取裝置，該固態影像拾取裝置接收由該光線聚集光學單元聚集的該光線並對該光線實施光電轉換；及一信號處理單元，處理該固態影像拾取裝置的該光電轉換所獲得的一信號，其中該固態影像拾取裝置包含一像素部位，由以在半導體基板的行及列方向排成陣列的單位像素所形成，一單位像素群集，其中該單位像素群集包含一第一單位像素，包含其上入射具有一第一波長的光線的該光電轉換器，該光線由該彩色濾波層分離，一第二單位像素，包含其上入射具有一第二波長的光線的該光電轉換器，該光線由該彩色濾波層分離，該第二坡長小於該第一波長，及一第三單位像素，包含其上入射具有一第三波長的光線的該光電轉換器，該光線由該彩色濾波層分離，該第三波長大於該第一波長，及 其中對於該單位像素群集中的該光電轉換器而言，各該波導的一中央軸相對於對應的光電轉換器的一中心的一位移量隨著該彩色濾波層分離的光線的波長越小而漸小，其中該單位像素包含一光電轉換器，形成於該半導體基板之上並將入射光轉換為一信號電荷，一波導，形成於該光電轉換器之上並引導該入射光至該光電轉換器，及一微透鏡，形成於該波導之上並引導該入射光至該波導的光入射側的一端，及其中該波導具有一圓柱形本體，具有自光入射側的該端至該光出口側的一端的恆定剖面，且設置成使自該微透鏡入射於該波導之光入射側的該端的入射光線中心係對準於該波導的一中央軸。 An image pickup device comprising: a light collecting optical unit for collecting incident light; and an image pickup unit comprising a solid-state image pickup device, the solid-state image pickup device receiving the light collected by the light collecting optical unit and implementing the light And a signal processing unit for processing a signal obtained by the photoelectric conversion of the solid-state image pickup device, wherein the solid-state image pickup device comprises a pixel portion arranged in an array in a row and a column direction of the semiconductor substrate Formed by a unit pixel, a unit pixel cluster, wherein the unit pixel cluster includes a first unit pixel, including the photoelectric converter on which light having a first wavelength is incident, the light is separated by the color filter layer, a two-unit pixel including the photoelectric converter on which light having a second wavelength is incident, the light is separated by the color filter layer, the second slope length is smaller than the first wavelength, and a third unit pixel includes a photoelectric converter having a light having a third wavelength incident thereon, the light being passed by the color filter layer From the third wave length is greater than the first wavelength, and Wherein, for the photoelectric converter in the unit pixel cluster, a displacement of a central axis of each waveguide relative to a center of the corresponding photoelectric converter is smaller with a wavelength of light separated by the color filter layer. Increasingly, wherein the unit pixel comprises a photoelectric converter formed on the semiconductor substrate and converting incident light into a signal charge, a waveguide formed on the photoelectric converter and guiding the incident light to the photoelectric conversion And a microlens formed on the waveguide and guiding the incident light to one end of the light incident side of the waveguide, and wherein the waveguide has a cylindrical body having the end from the light incident side to the light exit A constant cross section of one end of the side is disposed such that an incident ray center line from the end of the microlens incident on the light incident side of the waveguide is aligned with a central axis of the waveguide. 一種固態影像拾取裝置，包含：一像素部位，其中多數個像素排列成陣列；一基層，形成於一群多數個像素中於該群的一光入射表面的下方的位置，且該基層的佈局包含電極及接線，該佈局相對於預定相鄰的像素之間的一邊界為不對稱的；及調整機構，用以使該基層所造成的像素之間的光學不對稱成為光學對稱，其中該調整機構的一位移的一調整方向及一調整量在該整個像素部位中為相同。 A solid-state image pickup device comprising: a pixel portion, wherein a plurality of pixels are arranged in an array; a base layer is formed at a position of a plurality of pixels below a light incident surface of the group, and the layout of the base layer comprises an electrode And wiring, the layout being asymmetric with respect to a boundary between predetermined adjacent pixels; and adjusting mechanism for making optical asymmetry between the pixels caused by the base layer optically symmetrical, wherein the adjusting mechanism An adjustment direction of a displacement and an adjustment amount are the same in the entire pixel portion. 如申請專利範圍第8項的固態影像拾取裝置，更包 含：一彩色濾波層，形成於該像素的該光電轉換器之上，並分離入射光；一晶片上透鏡，位於該彩色濾波層上；及一基層，形成於該彩色濾波層的下方。 Such as the solid-state image pickup device of claim 8 of the patent scope, And comprising: a color filter layer formed on the photoelectric converter of the pixel and separating incident light; a wafer upper lens located on the color filter layer; and a base layer formed under the color filter layer. 如申請專利範圍第9項的固態影像拾取裝置，其中該像素部位包含多數個單位像素群集，各該單位像素群集具有多數個像素，該多數個像素共用單一個預定電晶體，及其中該不對稱的基層為包含該像素電晶體的一閘極及一接線部位的一基層。 The solid-state image pickup device of claim 9, wherein the pixel portion comprises a plurality of unit pixel clusters, each of the unit pixel clusters having a plurality of pixels, the plurality of pixels sharing a single predetermined transistor, and the asymmetry thereof The base layer is a base layer including a gate and a connection portion of the pixel transistor. 如申請專利範圍第10項的固態影像拾取裝置，其中該調整機構為各像素的一波導，其中該彩色濾波層形成於該波導的上方，其中該基層為位於該波導的下方且包含該閘極及該接線部位的一基層，及其中，在以規則間距於該整個像素部位中設置該波導的狀態作為一參考狀態中，至少一特定像素的一波導在該單位像素群集或是在多數個該相鄰的單位像素群集中，從該參考狀態的一位置偏移。 The solid-state image pickup device of claim 10, wherein the adjustment mechanism is a waveguide of each pixel, wherein the color filter layer is formed above the waveguide, wherein the base layer is located below the waveguide and includes the gate And a base layer of the wiring portion, and wherein a state in which the waveguide is disposed in the entire pixel portion at a regular interval is used as a reference state, a waveguide of at least one specific pixel is clustered in the unit pixel or in a plurality of In a neighboring unit pixel cluster, offset from a position of the reference state. 如申請專利範圍第11項的固態影像拾取裝置，其中至少一個一第一共同彩色像素的一波導位移離開靠近該波導的一共用的像素電晶體的一閘極，從該共同彩色像素輸出相同色彩的信號，以使該單位像素群集或是該多數個 相鄰的單位像素群集中的該共同彩色像素之間的靈敏度差異為相同。 The solid-state image pickup device of claim 11, wherein at least one waveguide of the first common color pixel is displaced from a gate of a common pixel transistor adjacent to the waveguide, and the same color is output from the common color pixel. Signal to make the unit pixel cluster or the majority The sensitivity difference between the common color pixels in adjacent unit pixel clusters is the same. 如申請專利範圍第12項的固態影像拾取裝置，其中至少一第二共同彩色像素的一波導自該共同彩色像素的該波導位移朝向一共用的像素電晶體的一閘極，以使該單位像素群集或是該多數個相鄰的單位像素群集中的該共同彩色像素之間的靈敏度差異為相同。 The solid-state image pickup device of claim 12, wherein a waveguide of at least one second common color pixel is displaced from the waveguide of the common color pixel toward a gate of a common pixel transistor such that the unit pixel The difference in sensitivity between the cluster or the common color pixel in the majority of the adjacent unit pixel clusters is the same. 如申請專利範圍第10項的固態影像拾取裝置，其中對於位於距該像素部位的一中心相同距離的該光電轉換器而言，實施波導瞳孔校正，以使該波導的該中央軸相對於該光電轉換器的該中心的一位移量隨著波長越長而漸大，該光線由該彩色濾波層分離並入射於該光電轉換器上。 The solid-state image pickup device of claim 10, wherein for the photoelectric converter located at the same distance from a center of the pixel portion, waveguide pupil correction is performed such that the central axis of the waveguide is opposite to the photoelectric A shift amount of the center of the converter is gradually increased as the wavelength is longer, and the light is separated by the color filter layer and incident on the photoelectric converter. 如申請專利範圍第8項的固態影像拾取裝置，其中該調整機構為該接線部位的一突出部位，及其中在該單位像素群集或是該多數個相鄰單位像素群集中，該接線部位的該突出部位突出至不影響該基層的一光電轉換器上方的一區域。 The solid-state image pickup device of claim 8, wherein the adjustment mechanism is a protruding portion of the connection portion, and wherein the unit pixel cluster or the plurality of adjacent unit pixel clusters The protruding portion protrudes to an area above a photoelectric converter that does not affect the base layer. 一種電子裝置，包含：一固態影像拾取裝置；一光學系統，引導入射光至該固態影像拾取裝置的一光電轉換器上；及一信號處理電路，處理該固態影像拾取裝置的一輸出信號，其中該固態影像拾取裝置為根據申請專利範圍第1到 4項其中任一項的固態影像拾取裝置。 An electronic device comprising: a solid-state image pickup device; an optical system for guiding incident light to a photoelectric converter of the solid-state image pickup device; and a signal processing circuit for processing an output signal of the solid-state image pickup device, wherein The solid-state image pickup device is based on the first patent application scope A solid-state image pickup device of any of the four items.
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