TWI424458B - Electric field aging treatment of electron emitters - Google Patents
Electric field aging treatment of electron emitters Download PDFInfo
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- TWI424458B TWI424458B TW095148887A TW95148887A TWI424458B TW I424458 B TWI424458 B TW I424458B TW 095148887 A TW095148887 A TW 095148887A TW 95148887 A TW95148887 A TW 95148887A TW I424458 B TWI424458 B TW I424458B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J63/00—Cathode-ray or electron-stream lamps
- H01J63/02—Details, e.g. electrode, gas filling, shape of vessel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/44—Factory adjustment of completed discharge tubes or lamps to comply with desired tolerances
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Description
本發明係關於電子發射體之電場時效處理方法，用以使具備多數個nm級之微細突起(具有適於進行電場放射之形狀)之電子發射體之電子發射物性與使用壽命特性穏定化。The present invention relates to an electric field aging treatment method for an electron emitter for determining electron emission properties and service life characteristics of an electron emitter having a plurality of fine protrusions of a nanometer order (having a shape suitable for electric field emission).
電子發射體，已知有在基板上將矽或金屬形成為微小圓錐形之柱型(SPINNED)之構造者(專利文獻1等)，在基板上形成碳奈米管之構造者(專利文獻2等)，或其他構造者。此種電子發射體之用途之一，係將電子發射體以真空密封於玻璃管內之狀態與陽極對向配置、且將螢光體積層於該陽極上的場致發射燈(field emission lamp)。For the electron emitter, a structure in which a crucible or a metal is formed into a micro-conical column type (SPINNED) on a substrate (Patent Document 1 and the like), and a structure in which a carbon nanotube is formed on a substrate (Patent Document 2) Etc), or other constructors. One of the uses of such an electron emitter is a field emission lamp in which an electron emitter is disposed opposite to an anode in a state of being vacuum-sealed in a glass tube, and a fluorescent volume layer is layered on the anode. .
該場致發射燈，可對電子發射體施加電場以從碳奈米管等之微細突起表面進行電子發射，所發射之電子撞擊螢光體而使其發光。The field emission lamp can apply an electric field to the electron emitter to emit electrons from the surface of the fine protrusion of the carbon nanotube or the like, and the emitted electrons collide with the phosphor to emit light.
當上述微細突起之尺寸比(aspectratio)不均等時，即會使尺寸比特定之微細突起產生電場集中，在進行電子發射時，該微細突起即會較其他微細突起先因熱蒸發而消耗，其次於另外之尺寸比之微細突起產生電場集中，如此，電子發射物性則不穏定，不僅會產生發光之閃爍或發光之不均一等缺陷，且使用壽命特性亦較短且不穏定。When the aspect ratio of the fine protrusions is not uniform, the electric field is concentrated in a specific size of the fine protrusions, and when the electron emission is performed, the fine protrusions are consumed by thermal evaporation earlier than the other fine protrusions, and secondly, In other sizes, the fine protrusions generate an electric field concentration, and thus, the electron emission properties are not determined, and not only defects such as flickering or unevenness of luminescence but also short-lived characteristics are obtained.
專利文獻1：日本特開平10－223128號公報專利文獻2：日本特開2005－317415號公報Patent Document 1: Japanese Laid-Open Patent Publication No. Hei No. Hei 10-223128
因此，本申請人有鑒上述課題，發明出一種能使微細突起之尺寸比均等化且能局部地去除不穏定部分的電場時效處理方法，藉此，能使電子發射體之電子發射物性與使用壽命特性穏定化。Therefore, the applicant has invented the above-mentioned problem and invented an electric field aging treatment method capable of equalizing the size ratio of the fine protrusions and locally removing the undetermined portion, thereby enabling the electron emission property and use of the electron emitter. The life characteristics are determined.
本發明之電子發射體之電場時效處理方法，其特徵在於：對具有透過施加電場來發射電子之複數個微細突起之電子發射體，藉由使該複數個微細突起分別選擇性地電場蒸發，使微細突起整體之尺寸比均等化且局部地去除不穏定部分，藉此使該電子發射體之電子發射物性與使用壽命特性穏定化。An electric field aging treatment method for an electron emitter according to the present invention is characterized in that an electron emitter having a plurality of fine protrusions that emit electrons by applying an electric field is selectively electrified by an electric field to evaporate each of the plurality of fine protrusions The size ratio of the entire fine protrusions is equalized and the undetermined portion is partially removed, whereby the electron emission properties and the service life characteristics of the electron emitter are determined.
根據本發明，由於藉由將上述複數個微細突起分別選擇性地電場蒸發來實施電場時效處理，因此能使微細突起整體之尺寸比均等化且能局部地去除不穏定之電子發射部分，藉此能使電子發射體之電子發射物性與使用壽命特性穏定化。According to the present invention, since the electric field aging treatment is performed by selectively electrifying the plurality of fine protrusions by electric field, the size ratio of the entire fine protrusions can be equalized and the electron emission portion which is not determined can be partially removed. The electron emission properties and lifetime characteristics of the electron emitter are determined.
本發明之一種較佳形態，係在真空中將該電子發射體與電極對向配置；以電子發射體為較電極低電位之電位關係(當以電極電位為正電位時，電子發射體電位會成為負電位或接地電位之關係)，來對電子發射體與電極施加電位以使該電子發射體之微細突起電場蒸發。In a preferred embodiment of the present invention, the electron emitter is disposed opposite to the electrode in a vacuum; and the electron emitter is a potential relationship of a lower potential of the electrode (when the electrode potential is a positive potential, the electron emitter potential is The relationship between the negative potential or the ground potential is to apply a potential to the electron emitter and the electrode to evaporate the electric field of the fine protrusion of the electron emitter.
本發明之一種較佳形態，係在真空中或大氣中將該電子發射體與電極對向配置；以電子發射體為較電極高電位之電位關係(當以電極電位為負電位或接地電位時，電子發射體電位會成為正電位之關係)，來對電子發射體與電極施加電位以使該電子發射體之微細突起電場蒸發。In a preferred embodiment of the present invention, the electron emitter is disposed opposite to the electrode in a vacuum or in the atmosphere; and the electron emitter is a potential relationship of a higher potential of the electrode (when the electrode potential is a negative potential or a ground potential) The electron emitter potential becomes a positive potential relationship, and a potential is applied to the electron emitter and the electrode to evaporate the electric field of the fine protrusion of the electron emitter.
根據本發明，藉由對電子發射體施以電場時效處理，能使電子發射體之電子發射物性與使用壽命特性穏定化。According to the present invention, electron emission properties and lifetime characteristics of the electron emitter can be determined by applying an electric field aging treatment to the electron emitter.
以下，詳細說明本發明實施形態之電子發射體之電場時效處理方法。Hereinafter, an electric field aging treatment method for an electron emitter according to an embodiment of the present invention will be described in detail.
圖1至圖6係供說明實施形態1之對電子發射體之電場時效處理方法的圖。圖1係以示意方式放大表示電場時效處理前之電子發射體。該電子發射體10係由基板12與基板表面之微細突起14構成。微細突起14，係由碳膜構成之具有nm級尖端之微細突起14。該微細突起14有碳奈米管、碳奈米壁、針狀碳膜以及其他。微細突起14亦可以金屬膜構成。1 to 6 are views for explaining an electric field aging treatment method for an electron emitter according to the first embodiment. Fig. 1 is an enlarged view schematically showing an electron emitter before electric field aging treatment. The electron emitter 10 is composed of a substrate 12 and fine protrusions 14 on the surface of the substrate. The fine protrusions 14 are fine protrusions 14 having a tip end of a nm order composed of a carbon film. The fine protrusions 14 have a carbon nanotube, a carbon nanowall, an acicular carbon film, and the like. The fine protrusions 14 may also be formed of a metal film.
其次如圖2所示，將用以對電子發射體10進行電場時效處理之電極(電場時效處理用電極)16與圖1之電子發射體10對向配置，且從直流電源18施加電壓(電場時效處理電壓)Vage，以將負電位施加於電子發射體10，將正電位施加於電場時效處理用電極16。藉此於電子發射體10與電場時效處理用電極16之間施加正向偏壓。Next, as shown in FIG. 2, an electrode (electric field aging treatment electrode) 16 for performing electric field aging treatment on the electron emitter 10 is disposed opposite to the electron emitter 10 of FIG. 1, and a voltage is applied from the DC power source 18 (electric field). The aging treatment voltage Vage is applied to the electron emitter 10 to apply a negative potential, and a positive potential is applied to the electric field aging treatment electrode 16. Thereby, a forward bias is applied between the electron emitter 10 and the electric field aging treatment electrode 16.
該電場時效處理電壓Vage如圖3所示係較電子發射體10之使用電壓Vuse大之電壓。圖3中橫軸係電壓、縱軸係電流，其表示電子發射體10之電壓－電流特性。圖3中Vage係電場時效處理電壓、Iage係對應該電場時效處理電壓之電流、Vuse係電子發射體使用時電壓、Iuse係對應Vuse之電流。由圖3可清楚得知，電場時效處理電壓Vage>>電子發射體使用時電壓Vuse。The electric field aging treatment voltage Vage is a voltage larger than the use voltage Vuse of the electron emitter 10 as shown in FIG. In FIG. 3, the horizontal axis is a voltage and the vertical axis is a current, which indicates the voltage-current characteristic of the electron emitter 10. In Fig. 3, the Vage is an electric field aging treatment voltage, the Iage is a current corresponding to the electric field aging treatment voltage, the Vuse electron emitter is used, and the Iuse is Vuse current. As can be clearly seen from Fig. 3, the electric field aging treatment voltage Vage>> the electron emitter uses the voltage Vuse.
藉由以上之電場時效處理，如以示意方式放大表示已施以電場時效處理之電子發射體10之圖4所示，電子發射體10之基板表面之微細突起14被選擇性地電場蒸發而使微細突起14整體之尺寸比均等化，且已去除不穏定之電子發射部分。By the above electric field aging treatment, as shown in Fig. 4, which is an enlarged schematic representation of the electron emitter 10 to which the electric field aging treatment has been applied, the fine protrusions 14 on the surface of the substrate of the electron emitter 10 are selectively evaporated by electric field. The size ratio of the entire fine protrusions 14 is equalized, and the unstable electron-emitting portion has been removed.
如上述，已施以電場時效處理之電子發射體10如圖5之實線所示其使用壽命特性大幅提升。此外，未施以電場時效處理之電子發射體10則如圖5之虛線所示，其使用壽命特性會隨著使用時間之經過而逐漸降低。As described above, the electron emitter 10 which has been subjected to the electric field aging treatment has a greatly improved life characteristic as shown by the solid line in FIG. Further, the electron emitter 10 which is not subjected to the electric field aging treatment is as shown by the broken line in Fig. 5, and its service life characteristics are gradually lowered as the use time elapses.
又，亦可如圖6所示將電子發射體10接地而使電子發射體10之施加電位為接地電位，從直流電源18將正電位施加於電場時效處理用電極16，將直流電源18之負極側接地，而從直流電源18將電位施加於電子發射體10與電場時效處理用電極16。Further, as shown in FIG. 6, the electron emitter 10 may be grounded to apply an electric potential of the electron emitter 10 to a ground potential, and a positive potential may be applied from the DC power source 18 to the electric field aging treatment electrode 16, and the negative electrode of the DC power source 18 may be used. The side is grounded, and a potential is applied from the DC power source 18 to the electron emitter 10 and the electric field aging treatment electrode 16.
其次參照圖7至圖12說明另一實施形態之電場時效處理方法。使用於實施形態2之電場時效處理之電子發射體10與圖1相同，但此處係作為實施形態2再度揭示於圖7。圖7之說明省略。Next, an electric field aging treatment method according to another embodiment will be described with reference to Figs. 7 to 12 . The electron emitter 10 used in the electric field aging treatment of the second embodiment is the same as that of Fig. 1, but is again disclosed in Fig. 7 as the second embodiment. The description of Fig. 7 is omitted.
如圖8所示，將用以對電子發射體10進行電場時效處理之電極(電場時效處理用電極16)與電子發射體10對向配置，且從直流電源18施加電壓(電場時效處理電壓)Vage，以將負電位施加於電子發射體10，將正電位施加於電場時效處理用電極16。此時，係於電子發射體10與電場時效處理用電極16之間施加逆向偏壓。As shown in FIG. 8, an electrode (electric field aging treatment electrode 16) for performing electric field aging treatment on the electron emitter 10 is disposed opposite to the electron emitter 10, and a voltage is applied from the DC power source 18 (electric field aging treatment voltage). Vage applies a negative potential to the electron emitter 10, and applies a positive potential to the electric field aging treatment electrode 16. At this time, a reverse bias is applied between the electron emitter 10 and the electric field aging treatment electrode 16.
該電場時效處理電壓Vage，如圖9所示其絕對值較電子發射體使用時電壓Vuse之絕對值大的電壓(| Vage |>>| Vuse |)。The electric field aging treatment voltage Vage is a voltage (| Vage |>>| Vuse |) whose absolute value is larger than the absolute value of the voltage Vuse when the electron emitter is used as shown in FIG.
電場時效處理電壓Vage係未達崩潰電壓之電壓，即從電子發射體10向電場時效處理用電極16流通較大之電流而即將要導通前的電壓(崩潰電壓)。當將該電場時效處理電壓Vage施加於電子發射體10時，電流幾乎不會從電子發射體10流至電場時效處理用電極16。並且，藉由該電場時效處理電壓Vage使微細突起14被選擇性地電場蒸發，而圖7之電子發射體10則如圖10所示，基板表面之微細突起14被選擇性地電場蒸發，使微細突起14整體之尺寸比均等化，且在發射電子之過程中已去除不穏定之部分。圖10雖與圖4同樣但此處作為實施形態2再度揭示。The electric field aging treatment voltage Vage is a voltage that does not reach the breakdown voltage, that is, a voltage (crash voltage) immediately before the conduction from the electron emitter 10 to the electric field aging treatment electrode 16 to a large current. When the electric field aging treatment voltage Vage is applied to the electron emitter 10, the current hardly flows from the electron emitter 10 to the electric field aging treatment electrode 16. Further, the electric field aging treatment voltage Vage causes the fine protrusions 14 to be selectively electrified by the electric field, and the electron emitter 10 of FIG. 7 is selectively field-evaporated by the electric field of the substrate as shown in FIG. The overall size ratio of the fine protrusions 14 is equalized, and an undetermined portion has been removed in the process of emitting electrons. Fig. 10 is the same as Fig. 4, but is disclosed again as the second embodiment.
如上述，已施以電場時效處理之電子發射體10如圖11之實線所示其使用壽命特性大幅提升。又，如圖11之虛線所示未施以電場時效處理之電子發射體10，其使用壽命特性會隨著使用時間之經過而逐漸降低。As described above, the electron emitter 10 which has been subjected to the electric field aging treatment has a greatly improved life characteristic as shown by the solid line in FIG. Further, as shown by the broken line in Fig. 11, the electron emitter 10 which is not subjected to the electric field aging treatment has a life characteristic which gradually decreases as the use time elapses.
又，亦可如圖12所示將電子發射體10連接於直流電源18之正極側而施加正電位，將該直流電源18之負極側接地，另一方面，將電場時效處理用電極16接地，而從直流電源18將電位施加於電子發射體10與電場時效處理用電極16。Further, as shown in FIG. 12, the electron emitter 10 may be connected to the positive electrode side of the DC power source 18 to apply a positive potential, and the negative electrode side of the DC power source 18 may be grounded, and the electric field aging treatment electrode 16 may be grounded. On the other hand, a potential is applied from the DC power source 18 to the electron emitter 10 and the electric field aging treatment electrode 16.
上述實施形態2之情形，電子發射體10之微細突起14亦可藉由電場蒸發使整體之尺寸比均等化，去除對電場不穏定之部分，構成為電子發射物性及使用壽命特性已穏定化之電子發射體10。In the case of the second embodiment, the fine protrusions 14 of the electron emitter 10 can be equalized by the electric field evaporation, and the portion which is not determined by the electric field can be removed, and the electron emission properties and the service life characteristics are determined. Electron emitter 10.
此實施形態2之電場時效處理中，不僅在真空中即使在大氣中亦能藉由電場蒸發實施電場時效處理(電子發射體10對微細突起14之電場蒸發)。其結果，能使用實施形態2之電場時效處理方法容易地控制電場時效處理。又，電子發射體10由於在電場時效處理時不需流通較大之電流，因此不容易引起異常放電，無對陽極給予不良影響之虞。且因係在大氣中之電場時效處理，不會如習知真空中之氣體污染電子發射體10表面，而不會影響作為電子發射體10之電場發射的工作函數。加之，亦不會如習知般電子發射體10表面被濺鍍而污染。再者，不需使電子發射體10流通較大電流來施以電場時效處理，因此，連接電子發射體10與陽極間之直流電源18不需要求如習知電場時效處理用之直流電源18的嚴格規範，能廉價地實施電場時效處理，根據以上各理由，可知此方法係一使電子發射體10之電子發射物性及使用壽命特性穏定化之卓越方法。In the electric field aging treatment of the second embodiment, the electric field aging treatment (the electric field evaporation of the electron emitter 10 to the fine protrusions 14) can be performed not only in the vacuum but also in the atmosphere by electric field evaporation. As a result, the electric field aging treatment can be easily controlled by the electric field aging treatment method of the second embodiment. Further, since the electron emitter 10 does not need to flow a large current during the electric field aging treatment, abnormal discharge is unlikely to occur, and there is no adverse effect on the anode. Moreover, since the electric field aging treatment in the atmosphere does not contaminate the surface of the electron emitter 10 as in the conventional vacuum, it does not affect the work function of the electric field emission as the electron emitter 10. In addition, the surface of the electron emitter 10 is not contaminated by sputtering as is conventional. Furthermore, the electron emitter 10 does not need to flow a large current to apply the electric field aging treatment. Therefore, the DC power source 18 connecting the electron emitter 10 and the anode does not need to be a DC power source 18 for conventional electric field aging treatment. Strictly regulated, the electric field aging treatment can be performed inexpensively. For the above reasons, it is known that this method is an excellent method for determining the electron emission properties and service life characteristics of the electron emitter 10.
又，說明藉由電場蒸發之電場時效處理原理如下。設電子發射體10與電場時效處理用電極16之對向距離為d、電場時效處理電壓為Vage時，該電子發射體10與電場時效處理用電極16間之整體平均電場E1，在電場時效處理時係以Vage/d施加。此情形下，使構成電子發射體10表面之微細突起14之原子飛出所需的電場須為V/nm級。此種情形下施加於各微細突起14之局部電場E2，係使用富雷一諾特海姆(Fowler-Nordheim)式之電場集中係數β以E1(Vage/d)．β施加。由於此β係微細突起14之尖端越銳利則越大的值而為大致1000左右以上，因此對電子發射體10，係以可將V/nm級之電場施加於微細突起14表面之方式設定電場時效處理電壓Vage，據以使微細突起14表面之原子飛出，而能使微細突起14電場蒸發。Further, the principle of electric field aging treatment by electric field evaporation is explained as follows. When the distance between the electron emitter 10 and the electric field aging treatment electrode 16 is d and the electric field aging treatment voltage is Vage, the overall average electric field E1 between the electron emitter 10 and the electric field aging treatment electrode 16 is treated in the electric field aging treatment. The time is applied as Vage/d. In this case, the electric field required to fly the atoms constituting the fine protrusions 14 on the surface of the electron emitter 10 must be in the V/nm order. In this case, the local electric field E2 applied to each of the fine protrusions 14 is a Fowler-Nordheim type electric field concentration coefficient β of E1 (Vage/d). β applied. Since the tip of the β-based fine protrusion 14 is sharper and larger, it is approximately 1000 or more. Therefore, the electron emitter 10 is set such that an electric field of a V/nm level is applied to the surface of the fine protrusion 14 . The aging treatment voltage Vage causes the atoms of the surface of the fine protrusions 14 to fly out, and the electric field of the fine protrusions 14 can be evaporated.
本發明之此種電場時效處理方法，特別在使電子發射體之電子發射物性及使用壽命特性穏定化之方面相當有用。該電子發射體能組裝於場致發射燈等之電子元件來使用。The electric field aging treatment method of the present invention is particularly useful in determining the electron emission properties and service life characteristics of an electron emitter. The electron emitter can be assembled for use in an electronic component such as a field emission lamp.
10‧‧‧電子發射體10‧‧‧Electronic emitters
12‧‧‧基板12‧‧‧Substrate
14‧‧‧微細突起14‧‧‧Microprotrusions
16．．．電場時效處理用電極16. . . Electric field aging treatment electrode
18．．．直流電源18. . . DC power supply
圖1係表示實施形態1之電場時效處理前之電子發射體10的示意放大圖。Fig. 1 is a schematic enlarged view showing an electron emitter 10 before electric field aging treatment in the first embodiment.
圖2係表示實施形態1之電場時效處理時之電子發射體、電場時效處理用電極及用以將電位施加於此等之直流電源18的圖。2 is a view showing an electron emitter, an electric field aging treatment electrode, and a DC power source 18 for applying a potential thereto during the electric field aging treatment in the first embodiment.
圖3(a),(b)係實施形態1之電場時效處理電壓Vage及電子發射體使用時電壓Vuse的關係圖。3(a) and 3(b) are diagrams showing the relationship between the electric field aging treatment voltage Vage of the first embodiment and the voltage Vuse when the electron emitter is used.
圖4係表示實施形態1之電場時效處理後之電子發射 體的示意放大圖。4 is a view showing electron emission after electric field aging treatment in Embodiment 1. A schematic enlarged view of the body.
圖5係表示實施形態1之已施以電場時效處理之電子發射體之使用壽命特性，及未施以電場時效處理之電子發射體之電流特性的圖。Fig. 5 is a graph showing the service life characteristics of the electron emitter subjected to the electric field aging treatment according to the first embodiment, and the current characteristics of the electron emitter subjected to the electric field aging treatment.
圖6係表示實施形態1之對電子發射體與電場時效處理用電極施加電位之例的圖。Fig. 6 is a view showing an example in which a potential is applied to an electron emitter and an electric field aging treatment electrode in the first embodiment.
圖7係表示實施形態2之電場時效處理前之電子發射體的示意放大圖。Fig. 7 is a schematic enlarged view showing an electron emitter before electric field aging treatment in the second embodiment.
圖8係表示實施形態2之電場時效處理時之電子發射體、電場時效處理用電極及用以將電位施加於此等之直流電源的圖。FIG. 8 is a view showing an electron emitter, an electric field aging treatment electrode, and a DC power source for applying a potential thereto during the electric field aging treatment according to the second embodiment.
圖9(a),(b)係實施形態2之電場時效處理電壓Vage及電子發射體使用時電壓Vuse的關係圖。Fig. 9 (a) and (b) are diagrams showing the relationship between the electric field aging treatment voltage Vage of the second embodiment and the voltage Vuse when the electron emitter is used.
圖10係表示實施形態2之電場時效處理後之電子發射體的示意放大圖。Fig. 10 is a schematic enlarged view showing an electron emitter after electric field aging treatment in the second embodiment.
圖11係表示實施形態2之已施以電場時效處理之電子發射體之使用壽命特性，及未施以電場時效處理之電子發射體之電流特性的圖。Fig. 11 is a view showing the service life characteristics of the electron emitter subjected to the electric field aging treatment according to the second embodiment, and the current characteristics of the electron emitter which is not subjected to the electric field aging treatment.
圖12係表示實施形態2之對電子發射體與電場時效處理用電極施加電位之例的圖。Fig. 12 is a view showing an example in which a potential is applied to an electron emitter and an electric field aging treatment electrode in the second embodiment.
10．．．電子發射體10. . . Electron emitter
12．．．基板12. . . Substrate
14．．．微細突起14. . . Fine protrusion
16．．．電場時效處理用電極16. . . Electric field aging treatment electrode
18．．．直流電源18. . . DC power supply
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| TW200605131A (en) * | 2004-04-15 | 2006-02-01 | Cdream Display Corp | Emitter structure with a protected gate electrode for an electron-emitting device |
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| JP2002150929A (en) * | 2000-09-01 | 2002-05-24 | Canon Inc | Manufacturing method of electron emitting element, electron source and image forming device |
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