TWI423339B - Heating device, substrate processing apparatus, and method of manufacturing semiconductor device - Google Patents
Heating device, substrate processing apparatus, and method of manufacturing semiconductor device Download PDFInfo
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- 238000012545 processing Methods 0.000 title claims description 127
- 239000000758 substrate Substances 0.000 title claims description 79
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
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- General Physics & Mathematics (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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Description
本發明係關於加熱裝置、處理基板之基板處理裝置及半導體裝置之製造方法。The present invention relates to a heating device, a substrate processing apparatus for processing a substrate, and a method of manufacturing the semiconductor device.
作為DRAM等之半導體裝置之製造方法的其中一個製程而言，有實施加熱矽晶圓等之基板以進行處理的基板處理製程。該製程係藉由基板處理裝置實施，該基板處理裝置具備：收容並處理基板之處理室；及加熱該處理室內之加熱裝置。加熱裝置具備：圍繞於處理室外周之環狀發熱體；及設於發熱體外周之環狀隔熱體。發熱體係以複數個山峰部與山谷部(缺口部)分別在上下端交互地相連的方式形成為蛇行狀(例如，參照專利文獻1)。As one of the processes for manufacturing a semiconductor device such as a DRAM, there is a substrate processing process for performing processing for heating a substrate such as a germanium wafer. The process is carried out by a substrate processing apparatus including: a processing chamber that houses and processes the substrate; and a heating device that heats the processing chamber. The heating device includes an annular heat generating body that surrounds the periphery of the processing chamber, and an annular heat insulator that is provided on the outer circumference of the heat generating body. The heat generation system is formed in a meandering manner such that a plurality of mountain portions and a valley portion (notch portion) are alternately connected to each other at the upper and lower ends (see, for example, Patent Document 1).
另外，加熱裝置具備：環狀發熱體，係圍繞於處理室外周；隔熱體，係以圍繞於發熱體外周之方式設置；及保持構件，係用以將發熱體固定於隔熱體之內壁(例如，參照專利文獻2)。Further, the heating device includes a ring-shaped heating element that surrounds the outer circumference of the processing chamber, a heat insulator that is disposed around the outer circumference of the heat generating body, and a holding member that fixes the heat generating body within the heat insulator Wall (for example, refer to Patent Document 2).
[專利文獻1]日本特開2007-88325號公報[Patent Document 1] Japanese Patent Laid-Open Publication No. 2007-88325
[專利文獻2]日本特開平4-318923號公報[Patent Document 2] Japanese Patent Laid-Open No. Hei 4-318923
該發熱體係藉由將環狀之發熱體的兩端貫穿而固定於隔熱體的側壁，並將發熱體之各山谷部分別固定於隔熱體的內周側壁，而保持於隔熱體之內周側。為了將發熱體之各山谷部固定於隔熱體的內周側壁，一般採用構成為例如橋形銷之保持體。亦即，將保持體之兩端分別***相鄰的各山谷部的末端部(谷底部)而固定於隔熱體的內周側壁，藉此，來抑制發熱體之偏移。The heat generating system is fixed to the side wall of the heat insulator by penetrating both ends of the annular heat generating body, and each valley portion of the heat generating body is fixed to the inner peripheral side wall of the heat insulator, and is held by the heat insulator. Inner circumference side. In order to fix the valley portions of the heat generating body to the inner peripheral side wall of the heat insulator, a holding body configured as, for example, a bridge pin is generally used. In other words, the both ends of the holder are inserted into the end portions (the bottom of the valley) of the adjacent valley portions and fixed to the inner peripheral side walls of the heat insulator, thereby suppressing the displacement of the heat generating body.
另外，在該加熱裝置中，當隨著昇溫而引起發熱體之熱膨脹時，會有發熱體與隔熱體接觸而使得此等構件受到損傷的情況。尤其是，發熱體之位移量會隨著離開保持構件而累積變大，所以，在離開保持構件之部位，容易產生發熱體與隔熱體之接觸。Further, in the heating device, when the thermal expansion of the heating element occurs due to the temperature rise, the heating element may come into contact with the heat insulator to cause the members to be damaged. In particular, since the amount of displacement of the heating element is increased as it leaves the holding member, contact between the heating element and the heat insulator is likely to occur at a portion away from the holding member.
然而，在上述構成中，當發熱體隨著昇溫而產生熱變形時，會有造成山谷部之間隙變窄而使得保持構件被剪斷的情況發生。However, in the above configuration, when the heat generating body is thermally deformed as the temperature rises, the gap between the valley portions is narrowed and the holding member is sheared.
在此，本發明之目的在於，提供一種能抑制發熱體之偏移，並可抑制因發熱體之熱變形所引起的保持構件之剪斷，且可抑制發熱體熱膨脹時之發熱體與隔熱體之接觸，或發熱體與銷構件之干涉，減低加熱裝置之構成構件的損傷之加熱裝置、基板處理裝置及半導體裝置之製造方法。In view of the above, it is an object of the present invention to provide a heating element capable of suppressing the displacement of a heating element and suppressing the shearing of the holding member due to thermal deformation of the heating element, and suppressing the heating element and the heat insulating when the heating element is thermally expanded. The heating device, the substrate processing device, and the method of manufacturing the semiconductor device that reduce the damage of the constituent members of the heating device by contact with the body or the interference between the heating element and the pin member.
根據本發明之一個態樣，提供一種加熱裝置，其具備：發熱體，係以複數個山峰部與山谷部交互地相連的方式形成為蛇行狀且兩端固定；保持體承受部，係分別設於該山谷部之末端，形成作為具有比該山谷部之寬度大的寬度之缺口部；隔熱體，係設於該發熱體之外周；及保持體，係配置於該保持體承受部內且固定於該隔熱體上。According to an aspect of the present invention, a heating device is provided, comprising: a heating element formed in a meandering manner in which a plurality of mountain portions are alternately connected to a valley portion, and fixed at both ends; a notch portion having a width larger than a width of the valley portion is formed at an end of the valley portion; a heat insulator is disposed on an outer circumference of the heat generating body; and a holding body is disposed in the holder receiving portion and fixed On the insulation.
根據本發明之另一個態樣，提供一種基板處理裝置，其具備：加熱裝置，其具備：發熱體，係以複數個山峰部與山谷部交互地相連的方式形成為蛇行狀且兩端固定；保持體承受部，係分別設於該山谷部之末端，形成作為具有比該山谷部之寬度大的寬度之缺口部；隔熱體，係設於該發熱體之外周；和保持體，係配置於該保持體承受部內且固定於該隔熱體上；以及處理室，係設於該加熱裝置之內部，用來處理基板。According to another aspect of the present invention, a substrate processing apparatus including: a heating device having a heating element formed in a meandering manner in which a plurality of mountain portions are alternately connected to a valley portion, and both ends are fixed; The holder receiving portions are respectively provided at the end of the valley portion to form a notch portion having a width larger than the width of the valley portion; the heat insulator is disposed on the outer circumference of the heating element; and the holder is disposed The holding body receiving portion is fixed to the heat insulating body; and the processing chamber is disposed inside the heating device for processing the substrate.
根據本發明之再一態樣，提供一種半導體裝置之製造方法，其具備：將基板搬入設於加熱裝置內部之處理室內的製程；及將該加熱裝置所具備且以複數個山峰部與山谷部交互地相連的方式形成為蛇行狀的發熱體之兩端，固定於該發熱體之外周所設置的隔熱體上，並將保持體配置於分別被設於該山谷部之末端且形成作為具有比該山谷部之寬度大的寬度之缺口部的保持體承受部內，且固定於該隔熱體上，藉此，一面保持該發熱體之位置，一面使該發熱體昇溫而對該處理室內之基板加熱來進行處理的製程。According to still another aspect of the present invention, a method of manufacturing a semiconductor device includes: a process of loading a substrate into a processing chamber provided inside the heating device; and providing the heating device with a plurality of peaks and valley portions The two ends of the heating element formed in a meandering manner are alternately connected, and are fixed to the heat insulator provided on the outer circumference of the heat generating body, and the holding body is disposed at the end of each of the valley portions and formed as having The holder receiving portion of the notch portion having a width larger than the width of the valley portion is fixed to the heat insulator, whereby the heat generating body is heated while being held in the processing chamber while maintaining the position of the heat generating body The process in which the substrate is heated for processing.
根據本發明之再一態樣，提供一種加熱裝置，其具備：發熱體，係形成為環狀；隔熱體，係以圍繞於該發熱體之外周的方式設置；及固定部，用以將該發熱體固定於該隔熱體之內壁；其中至少在該發熱體處於室溫狀態時，該發熱體與該隔熱體之內壁間的距離，係設定為隨著遠離該固定部而增大。According to still another aspect of the present invention, a heating device including: a heat generating body formed in an annular shape; a heat insulating body disposed to surround an outer circumference of the heat generating body; and a fixing portion for The heating element is fixed to the inner wall of the heat insulator; wherein at least when the heat generating body is at room temperature, the distance between the heat generating body and the inner wall of the heat insulator is set to be away from the fixing portion. Increase.
根據本發明之再一態樣，提供一種半導體裝置之製造方法，具備以下製程：將基板搬入處理室內的製程，該處理室係設於加熱裝置之形成環狀的發熱體內側，該加熱裝置具有該發熱體、以圍繞於該發熱體之外周的方式設置的隔熱體、和用以將該發熱體固定於該隔熱體之內壁的固定部；以及使該發熱體昇溫而對該處理室內之基板加熱來進行處理的製程；至少在該發熱體處於室溫狀態時，該發熱體與該隔熱體之內壁間的距離，係設定為隨著遠離該固定部而增大。According to still another aspect of the present invention, there is provided a method of manufacturing a semiconductor device comprising: a process of loading a substrate into a processing chamber, the processing chamber being disposed inside an annular heat generating body of the heating device, the heating device having The heat generating body, a heat insulator provided to surround the outer circumference of the heat generating body, and a fixing portion for fixing the heat generating body to the inner wall of the heat insulator; and heating the heat generating body to treat the heat generating body The process of heating the substrate in the room for processing; at least when the heat generating body is at room temperature, the distance between the heat generating body and the inner wall of the heat insulating body is set to increase as moving away from the fixed portion.
根據本發明之加熱裝置、基板處理裝置及半導體裝置之製造方法，可抑制發熱體之偏移，並可抑制因發熱體之熱變形所引起的保持構件之剪斷，同時可抑制發熱體熱膨脹時之發熱體與隔熱體之接觸，減低加熱裝置之構成構件的損傷。According to the heating apparatus, the substrate processing apparatus, and the method of manufacturing the semiconductor device of the present invention, it is possible to suppress the displacement of the heat generating body, and it is possible to suppress the shearing of the holding member due to the thermal deformation of the heat generating body, and to suppress the thermal expansion of the heat generating body. The contact between the heating element and the heat insulator reduces damage to the constituent members of the heating device.
〈第1實施形態〉<First embodiment>
以下，參照圖面說明本發明之第1實施形態。Hereinafter, a first embodiment of the present invention will be described with reference to the drawings.
第1圖為本發明之第1實施形態的基板處理裝置之垂直剖視圖。第2圖為本發明之第1實施形態的加熱單元之立體圖。第3圖為本發明之第1實施形態的加熱單元之局部放大圖。第4(a)圖為例示構成本發明之第1實施形態的環狀部之線狀材料的示意圖，第4(b)圖為例示構成該環狀部之板狀材料的示意圖。第19(a)圖為本發明之第1實施形態的環狀部之局部放大圖，第19(b)圖為放大部分之側視圖。Fig. 1 is a vertical sectional view showing a substrate processing apparatus according to a first embodiment of the present invention. Fig. 2 is a perspective view of a heating unit according to a first embodiment of the present invention. Fig. 3 is a partially enlarged view of the heating unit according to the first embodiment of the present invention. Fig. 4(a) is a schematic view showing a linear material constituting the annular portion according to the first embodiment of the present invention, and Fig. 4(b) is a schematic view showing a plate-like material constituting the annular portion. Fig. 19(a) is a partially enlarged view of the annular portion according to the first embodiment of the present invention, and Fig. 19(b) is a side view showing an enlarged portion.
(1)基板處理裝置的構成(1) Composition of substrate processing apparatus
以下，針對本發明之一實施形態的基板處理裝置之構成進行說明。如第1圖所示，本實施形態之基板處理裝置，係作為分批式縱熱壁型減壓CVD(Chemical vapor Deposition)裝置而構成。Hereinafter, the configuration of a substrate processing apparatus according to an embodiment of the present invention will be described. As shown in Fig. 1, the substrate processing apparatus of the present embodiment is configured as a batch type vertical vapor wall type CVD (Chemical vapor Deposition) apparatus.
本實施形態之基板處理裝置，具有被垂直地支撐之縱形處理管11。處理管11具備外管12及內管13。外管12及內管13係由例如石英(SiO2 )或碳化矽(SiC)等之高耐熱性材料而分別一體成型。外管12係形成為上端閉塞且下端開口之圓筒形狀。內管13係形成為上下兩端開口之圓筒形狀。外管12之內徑係構成為比內管13的外徑大。外管12係以圍繞於內管13外側之方式相對於內管13設成同心圓狀。在內管13內形成有收容及處理晶圓1用之處理室14，該晶圓1係藉由作為基板保持器之晶舟22而以水平姿勢多層地疊置。內管13之下端開口係構成使晶舟22進出用的爐口15。The substrate processing apparatus of this embodiment has a vertical processing tube 11 that is vertically supported. The treatment tube 11 is provided with an outer tube 12 and an inner tube 13. The outer tube 12 and the inner tube 13 are integrally molded by a high heat resistant material such as quartz (SiO 2 ) or tantalum carbide (SiC). The outer tube 12 is formed in a cylindrical shape in which the upper end is closed and the lower end is open. The inner tube 13 is formed in a cylindrical shape in which both upper and lower ends are opened. The inner diameter of the outer tube 12 is configured to be larger than the outer diameter of the inner tube 13. The outer tube 12 is concentrically formed with respect to the inner tube 13 so as to surround the outer side of the inner tube 13. A processing chamber 14 for accommodating and processing the wafer 1 is formed in the inner tube 13, and the wafer 1 is stacked in a plurality of layers in a horizontal posture by a wafer boat 22 as a substrate holder. The lower end opening of the inner tube 13 constitutes a furnace opening 15 for allowing the wafer boat 22 to enter and exit.
外管12與內管13之間的下端部，係藉由形成為圓環形的歧管16而分別被氣密性地密封。歧管16係由例如不鏽鋼(SUS)所形成。為了能進行內管13及外管12之交換等，歧管16係分別以可裝卸自如的方式裝設於內管13及外管12。歧管16係藉加熱器底座19而以水平姿勢支撐，藉此，處理管11成為垂直站立的狀態。The lower end portion between the outer tube 12 and the inner tube 13 is hermetically sealed by the manifold 16 formed in a circular shape. The manifold 16 is formed of, for example, stainless steel (SUS). In order to enable exchange of the inner tube 13 and the outer tube 12, the manifold 16 is detachably attached to the inner tube 13 and the outer tube 12, respectively. The manifold 16 is supported by the heater base 19 in a horizontal posture, whereby the processing tube 11 is in a vertically standing state.
於歧管16之側壁連接排氣管17之上游端。排氣管17之內部係與形成於內管13及外管12之間的圓筒形中空體(間隙)之排氣通道18內連通。排氣通道18之橫截面形狀成為例如一定寬度之圓環形。排氣管17成為連接於作為圓筒形中空體之排氣通道18的最下端部的狀態。在排氣管17上，從上游起依序設置壓力感測器17a、作為壓力調整閥之APC(Auto Pressure Controller)閥17b、真空排氣裝置17c。藉由一面使真空排氣裝置作動，一面根據藉壓力感測器檢測出之壓力來控制APC閥的開啟度，可使處理室14內之壓力成為既定壓力(真空度)。主要藉由排氣管17、壓力感測器17a、APC閥17b、真空排氣裝置17c，來構成對處理室14內之環境氣體進行排氣的排氣線路。壓力感測器17a、APC閥17b、真空排氣裝置17c，係連接於作為控制部之控制器280。控制器280係構成為可根據藉壓力感測器17a檢測出之壓力資訊來控制APC閥17b的閥開度，從而可使處理室14內之壓力成為既定之處理壓力。The upstream end of the exhaust pipe 17 is connected to the side wall of the manifold 16. The inside of the exhaust pipe 17 communicates with the inside of the exhaust passage 18 formed in the cylindrical hollow body (gap) between the inner pipe 13 and the outer pipe 12. The cross-sectional shape of the exhaust passage 18 is, for example, a circular shape having a certain width. The exhaust pipe 17 is connected to the lowermost end portion of the exhaust passage 18 which is a cylindrical hollow body. The exhaust pipe 17 is provided with a pressure sensor 17a, an APC (Auto Pressure Controller) valve 17b as a pressure regulating valve, and a vacuum exhausting device 17c in this order from the upstream. By operating the vacuum exhausting device while controlling the opening degree of the APC valve based on the pressure detected by the pressure sensor, the pressure in the processing chamber 14 can be set to a predetermined pressure (vacuum degree). The exhaust line that exhausts the ambient gas in the processing chamber 14 is mainly constituted by the exhaust pipe 17, the pressure sensor 17a, the APC valve 17b, and the vacuum exhaust device 17c. The pressure sensor 17a, the APC valve 17b, and the vacuum exhaust device 17c are connected to a controller 280 as a control unit. The controller 280 is configured to control the valve opening degree of the APC valve 17b based on the pressure information detected by the pressure sensor 17a, so that the pressure in the processing chamber 14 can be a predetermined processing pressure.
封閉歧管16之下端開口部的圓盤形密封蓋20，係從垂直方向下側抵接於於歧管16。密封蓋20之外徑係構成為與外管12、歧管16的外徑大致相等。密封蓋20係構成為可藉由裝設於處理管11外部之晶舟昇降器21(僅圖示其中一部分)而沿垂直方向昇降。在密封蓋20之下方設有旋轉機構25。旋轉機構25之旋轉軸係垂直貫穿密封蓋20。該晶舟22係垂直立起地被支撐於旋轉機構25之旋轉軸上。如上述，晶舟22係構成為在使複數片晶圓1以水平姿勢且晶圓中心相互對齊的狀態下多層地疊置保持複數片晶圓1。The disc-shaped sealing cover 20 that closes the opening at the lower end of the manifold 16 abuts against the manifold 16 from the lower side in the vertical direction. The outer diameter of the seal cap 20 is configured to be substantially equal to the outer diameter of the outer tube 12 and the manifold 16. The sealing cover 20 is configured to be vertically movable in a vertical direction by a boat lifter 21 (only a part of which is illustrated) attached to the outside of the processing tube 11. A rotation mechanism 25 is provided below the sealing cover 20. The rotating shaft of the rotating mechanism 25 vertically penetrates the sealing cover 20. The boat 22 is supported vertically on the rotating shaft of the rotating mechanism 25. As described above, the wafer boat 22 is configured to stack and hold the plurality of wafers 1 in a plurality of layers in a state in which the plurality of wafers 1 are aligned in a horizontal posture and the wafer centers are aligned with each other.
藉由使旋轉機構25動作，可使晶舟22在處理室14內旋轉。The wafer boat 22 can be rotated in the processing chamber 14 by operating the rotating mechanism 25.
在密封蓋20上，於垂直方向連接有氣體導入管23。於氣體導入管23之上游側端(下端)，分別連接有原料氣體供給裝置23a及運載氣體供給裝置23b。氣體導入管23之下游側端(上端)，係構成為朝處理室14內供給(噴出)氣體。從氣體導入管23供給至處理室14內(內管13內)之氣體，流經保持於處理室14內之各晶圓1的表面後，從內管13之上端開口流出至排氣通道18內而從排氣管17排出。主要由氣體導入管23、原料氣體供給裝置23a及運載氣體供給裝置23b構成將氣體供給至處理室14內之氣體供給線路。原料氣體供給裝置23a及運載氣體供給裝置23b，係連接於控制器280。控制器280係構成為藉由控制原料氣體供給裝置23a及運載氣體供給裝置23b，而在既定的時間點朝處理室14內供給既定流量之原料氣體及運載氣體。A gas introduction pipe 23 is connected to the sealing cover 20 in the vertical direction. A material gas supply device 23a and a carrier gas supply device 23b are connected to the upstream side (lower end) of the gas introduction pipe 23, respectively. The downstream end (upper end) of the gas introduction pipe 23 is configured to supply (discharge) gas into the processing chamber 14. The gas supplied from the gas introduction pipe 23 to the inside of the processing chamber 14 (inside the inner tube 13) flows through the surface of each wafer 1 held in the processing chamber 14, and then flows out from the upper end opening of the inner tube 13 to the exhaust passage 18. It is discharged from the exhaust pipe 17 inside. The gas introduction pipe 23, the material gas supply device 23a, and the carrier gas supply device 23b mainly constitute a gas supply line for supplying gas into the processing chamber 14. The material gas supply device 23a and the carrier gas supply device 23b are connected to the controller 280. The controller 280 is configured to supply a material gas and a carrier gas of a predetermined flow rate into the processing chamber 14 at a predetermined time point by controlling the material gas supply device 23a and the carrier gas supply device 23b.
另外，在外管12與內管13之間的間隙，沿垂直方向配置有溫度感測器24。溫度感測器24係連接於控制器280。Further, a temperature sensor 24 is disposed in the vertical direction between the outer tube 12 and the inner tube 13. Temperature sensor 24 is coupled to controller 280.
控制器280係構成為可根據藉溫度感測器24檢測出之溫度資訊，來控制對後述之加熱單元30具備的各發熱體42的通電情況(一對供電部45,46之供電)，藉此，構成使保持於處理室14內之晶圓1的表面溫度成為既定之處理溫度。The controller 280 is configured to control the energization of each of the heating elements 42 (heating of the pair of power supply units 45, 46) provided in the heating unit 30, which will be described later, based on the temperature information detected by the temperature sensor 24. Thus, the surface temperature of the wafer 1 held in the processing chamber 14 is set to a predetermined processing temperature.
(2)加熱單元的構成例1(2) Configuration Example 1 of the heating unit
在外管12之外部以圍繞於外管12周圍的方式設有作為加熱處理管11內部的加熱裝置之加熱單元30。加熱單元30具備：發熱體42、隔熱體33、保持體41及外殼31。A heating unit 30 as a heating means inside the heat treatment tube 11 is provided outside the outer tube 12 so as to surround the periphery of the outer tube 12. The heating unit 30 includes a heating element 42 , a heat insulator 33 , a holding body 41 , and a casing 31 .
發熱體42係以圍繞於外管12周圍之方式沿垂直方向設置至少一個以上。如第2、第3圖所示，發熱體42分別具備環狀部42R及一對供電部45,46。環狀部42R係以圍繞於外管12外周之方式構成為環狀。環狀部42R之兩端部係相互靠近地固定而沒有接觸，成為非電性接觸狀。亦即，環狀部42R係構成為不是完全電性狀態的圓形，而是形成為例如C字狀的環形。作為構成環狀部42R之材料而言，可使用例如Fe-Cr-Al合金、MOSi2 、SiC等之電阻發熱材料，其形狀可為第4(a)圖所示之線狀材料，亦可為第4(b)圖所示之板狀材料。一對供電部45,46係貫穿後述之隔熱體33(側壁部35)而固定於隔熱體33上，且其端部分別連接於環狀部42R的兩端部。一對供電部45,46係由金屬等之導電性材料所構成。透過一對供電部45,46而從環狀部42R的一端朝另一端流動電流，藉此，可加熱環狀部42R而使得處理管11內昇溫。一對供電部45,46係連接於控制器280。The heating element 42 is disposed at least one or more in a vertical direction so as to surround the periphery of the outer tube 12. As shown in FIGS. 2 and 3, the heating elements 42 each include an annular portion 42R and a pair of power supply portions 45 and 46. The annular portion 42R is formed in a ring shape so as to surround the outer circumference of the outer tube 12. Both end portions of the annular portion 42R are fixed to each other without contact, and are in a non-electrical contact shape. In other words, the annular portion 42R is formed in a circular shape that is not in a fully electrical state but is formed in, for example, a C-shape. As a material constituting the annular portion 42R, a resistance heat generating material such as Fe-Cr-Al alloy, MOSi 2 or SiC can be used, and the shape thereof can be a linear material as shown in Fig. 4(a). It is a plate-like material as shown in Fig. 4(b). The pair of power supply portions 45 and 46 are fixed to the heat insulator 33 through a heat insulator 33 (side wall portion 35) to be described later, and the end portions thereof are respectively connected to both end portions of the annular portion 42R. The pair of power supply portions 45, 46 are made of a conductive material such as metal. The current flows from one end of the annular portion 42R to the other end through the pair of power supply portions 45, 46, whereby the annular portion 42R can be heated to raise the temperature inside the processing tube 11. The pair of power supply units 45, 46 are connected to the controller 280.
隔熱體33係以圍繞於環狀部42R外周之方式而設。隔熱體33具備：上下端開口之圓筒狀側壁部35；及覆蓋側壁部35之上部開口的頂壁部34；隔熱體33係形成為下端開口之圓筒狀。隔熱體33係分別相對於外管12及環狀部42R而形成為同心圓狀。側壁部35及頂壁部34，係由例如纖維狀或球狀之氧化鋁(Al2 O3 )或氧化矽(SiO2 )等的隔熱材料形成。側壁部35及頂壁部34係分別藉由例如真空成型法等而一體成型。又，側壁部35不限定於一體成型之情況，還可藉由多層地堆疊複數個圓形之隔熱材而構成。藉由此種構成，可抑制應力施加於側壁部35上時之側壁部35的破損，或者可提高維護性。The heat insulator 33 is provided to surround the outer circumference of the annular portion 42R. The heat insulator 33 includes a cylindrical side wall portion 35 that is open at the upper and lower ends, and a top wall portion 34 that covers the upper portion of the side wall portion 35. The heat insulator 33 is formed in a cylindrical shape having a lower end opening. The heat insulator 33 is formed concentrically with respect to the outer tube 12 and the annular portion 42R, respectively. The side wall portion 35 and the top wall portion 34 are formed of, for example, a heat insulating material such as fibrous or spherical alumina (Al 2 O 3 ) or yttrium oxide (SiO 2 ). The side wall portion 35 and the top wall portion 34 are integrally molded by, for example, a vacuum forming method or the like. Further, the side wall portion 35 is not limited to the case of integral molding, and may be configured by stacking a plurality of circular heat insulating materials in a plurality of layers. According to this configuration, it is possible to suppress breakage of the side wall portion 35 when stress is applied to the side wall portion 35, or to improve maintainability.
第19(a)圖顯示從環狀部42R之中心側觀察(從處理管11側觀察)之環狀部42R的局部放大圖。於環狀部42R之上下端分別交互地連接有複數個山峰部(突出部)42a及山谷部(缺口部)42b。亦即，環狀部42R係形成為蛇行狀(波狀)。在設於環狀部42R之上下端的各山谷部42b的末端(谷底部)，設有形成為例如橢圓形之缺口部的保持體承受部42c。保持體承受部42c之寬度(沿環狀部42R之周方向的寬度，以下亦稱為第2寬度(b))，係構成為比山谷部42b之寬度(沿環狀部42R之周方向的寬度，以下亦稱為第1寬度(a))寬。Fig. 19(a) is a partial enlarged view of the annular portion 42R as seen from the center side of the annular portion 42R (as viewed from the processing tube 11 side). A plurality of mountain portions (protrusions) 42a and valley portions (notch portions) 42b are alternately connected to the lower end of the annular portion 42R. That is, the annular portion 42R is formed in a meandering shape (wave shape). A holder receiving portion 42c formed in, for example, an elliptical notch portion is provided at the end (the bottom of the valley) of each of the valley portions 42b provided at the lower end of the annular portion 42R. The width of the holder receiving portion 42c (the width along the circumferential direction of the annular portion 42R, hereinafter also referred to as the second width (b)) is configured to be wider than the width of the valley portion 42b (along the circumferential direction of the annular portion 42R). The width, hereinafter also referred to as the first width (a)) is wide.
環狀部42R係藉由將一對供電部45,46貫穿隔熱體33(側壁部35)而固定，並如第19圖所示，藉由複數個保持體41將各山谷部42b分別固定於隔熱體33(側壁部35)的內周面，而被保持於隔熱體33之內周側。各保持體41係構成配置於保持體承受部42c內且固定於隔熱體33上。保持體41係作為橋形(爬釘形)的銷而構成。構成為橋形銷之保持體41的兩端，係以從環狀部42R之中心側朝外側(側壁部35側)分別***相鄰之保持體承受部42c內，且刺入於隔熱體33(側壁部35)的內周面之方式固定。環狀部42R之外周面與側壁部35的內周面，係以不會接觸而保持既定之間隔(沿環狀部42R之半徑向的寬度，以下亦稱為第3寬度(c))進行固定之方式構成。又，保持體41不限定於上述橋形，還可構成為其一端部被***固定於隔熱體33(側壁部35)的內周面之L字形銷，並還可構成為其中央部被***固定於隔熱體33(側壁部35)的內周面之T字形銷。The annular portion 42R is fixed by penetrating the pair of power supply portions 45, 46 through the heat insulator 33 (side wall portion 35), and as shown in Fig. 19, the respective valley portions 42b are fixed by a plurality of holding bodies 41, respectively. The inner peripheral surface of the heat insulator 33 (side wall portion 35) is held by the inner peripheral side of the heat insulator 33. Each of the holding bodies 41 is disposed in the holder receiving portion 42c and is fixed to the heat insulator 33. The holding body 41 is configured as a bridge-shaped (climbing-shaped) pin. Both ends of the holder 41, which is a bridge pin, are inserted into the adjacent holder receiving portion 42c from the center side of the annular portion 42R toward the outside (the side wall portion 35 side), and are inserted into the heat insulator. The inner peripheral surface of 33 (side wall portion 35) is fixed. The outer circumferential surface of the annular portion 42R and the inner circumferential surface of the side wall portion 35 are held at a predetermined interval (the width along the radius of the annular portion 42R, hereinafter also referred to as the third width (c)) without contact. It is constructed in a fixed manner. Further, the holding body 41 is not limited to the above-described bridge shape, and may have an L-shaped pin whose one end portion is inserted and fixed to the inner circumferential surface of the heat insulator 33 (side wall portion 35), and may be configured such that its central portion is A T-shaped pin fixed to the inner circumferential surface of the heat insulator 33 (side wall portion 35) is inserted.
以上述方式構成之結果，可確保沿環狀部42R之周方向的移動量大於以往之移動量。亦即，環狀部42R係一面沿環狀部42R之周方向確保最大相當於保持體承受部42c之寬度(第2寬度(b))的移動量一面固定。另外，可沿環狀部42R之半徑方向，確保既定大小之移動量。亦即，一面沿環狀部42R之半徑方向確保最大相當於第3寬度(c)的移動量一面固定。As a result of the above configuration, it is possible to ensure that the amount of movement in the circumferential direction of the annular portion 42R is larger than the conventional movement amount. In other words, the annular portion 42R is fixed while ensuring a maximum amount of movement corresponding to the width (second width (b)) of the holder receiving portion 42c in the circumferential direction of the annular portion 42R. Further, the amount of movement of a predetermined size can be ensured in the radial direction of the annular portion 42R. In other words, the amount of movement that corresponds to the third width (c) at the maximum in the radial direction of the annular portion 42R is fixed.
蛇行狀之環狀部42R具有當加熱時因熱膨脹而朝周方向或半徑方向伸展的特性。根據本實施形態，即使環狀部42R因熱膨脹而朝周方向伸展，只要其延伸量未滿該移動量(最大為第2寬度(b))，則仍可抑制環狀部42R與保持體41之干涉(接觸)。其結果，可抑制保持體41之脫落等。另外，可減低施加於環狀部42R的壓縮應力，可抑制環狀部42R的變形、破裂或短路等。The meandering annular portion 42R has a characteristic of extending in the circumferential direction or the radial direction due to thermal expansion when heated. According to the present embodiment, even if the annular portion 42R is extended in the circumferential direction by thermal expansion, if the amount of extension is less than the amount of movement (maximum second width (b)), the annular portion 42R and the holder 41 can be suppressed. Interference (contact). As a result, it is possible to suppress the falling off of the holding body 41 and the like. Further, the compressive stress applied to the annular portion 42R can be reduced, and deformation, cracking, short-circuiting, or the like of the annular portion 42R can be suppressed.
又，當環狀部42R之延伸量超過一定量而使得沿環狀部42R之周方向的移動量變為零時，則塑性壓力會施加於環狀部42R之各部分，而會有環狀部42R發生變形的情況。例如，環狀部42R具有以山谷部42b的寬度(第1寬度(a))變窄之方式變形的情況。根據本實施形態，將配置保持體41之保持體承受部42c之寬度(第2寬度(b))構成為比山谷部42b的寬度(第1寬度(a))寬。因此，即使環狀部42R變形而使得山谷部42b的寬度(第1寬度(a))變窄，保持體41與環狀部42R仍可構成為不容易干涉(接觸)，可抑制保持體41之剪斷。Further, when the amount of extension of the annular portion 42R exceeds a certain amount so that the amount of movement in the circumferential direction of the annular portion 42R becomes zero, plastic pressure is applied to each portion of the annular portion 42R, and an annular portion is provided. 42R is deformed. For example, the annular portion 42R is deformed so that the width (the first width (a)) of the valley portion 42b is narrowed. According to the present embodiment, the width (second width (b)) of the holder receiving portion 42c in which the holder 41 is placed is configured to be wider than the width (first width (a)) of the valley portion 42b. Therefore, even if the annular portion 42R is deformed so that the width (the first width (a)) of the valley portion 42b is narrowed, the holding body 41 and the annular portion 42R can be configured to be less likely to interfere (contact), and the holding body 41 can be suppressed. Cut off.
另外，即使環狀部42R因熱膨脹朝半徑方向伸展，只要該延伸量未滿該移動量(最大為第3寬度(c))，則仍可抑制環狀部42R與隔熱體33之內周壁的接觸。另外，可抑制環狀部42R之局部溫度上昇(異常溫度上昇)或環狀部42R的熔斷，可延長環狀部42R或隔熱體33之壽命。另外，可使處理室14內之溫度分布達成均勻化。Further, even if the annular portion 42R is extended in the radial direction by thermal expansion, if the amount of the extension is less than the amount of movement (maximum to the third width (c)), the annular portion 42R and the inner peripheral wall of the heat insulator 33 can be suppressed. s contact. Further, it is possible to suppress the local temperature rise (abnormal temperature rise) of the annular portion 42R or the melting of the annular portion 42R, and the life of the annular portion 42R or the heat insulator 33 can be prolonged. In addition, the temperature distribution in the processing chamber 14 can be made uniform.
外殼31係以圍繞於隔熱體33外周之方式而設。外殼31係形成為例如上端閉塞且下端開口之圓筒形狀。外殼31係由例如不鏽鋼(SUS)形成。隔熱體33之外周面與外殼31的內周面之間的間隙32，係可用作為進行空氣冷卻的空間。又，還可設置貫穿頂壁部34及外殼31的頂壁之排氣口，而構成強制性地對隔熱體33與外管12之間的環境氣體進行空氣冷卻。The outer casing 31 is provided to surround the outer periphery of the heat insulator 33. The outer casing 31 is formed in, for example, a cylindrical shape in which the upper end is closed and the lower end is open. The outer casing 31 is formed of, for example, stainless steel (SUS). A gap 32 between the outer circumferential surface of the heat insulator 33 and the inner circumferential surface of the outer casing 31 can be used as a space for air cooling. Further, an exhaust port penetrating the top wall portion 34 and the top wall of the outer casing 31 may be provided to forcibly cool the ambient gas between the heat insulator 33 and the outer tube 12.
(2)加熱單元的構成例2(2) Configuration example 2 of the heating unit
在外管12之外部以圍繞於外管12周圍的方式設有作為加熱處理管11內部的加熱裝置之加熱單元30。加熱單元30具備：發熱體42，係形成為環狀；隔熱體33，係以圍繞於發熱體42之外周的方式設置；作為固定部之一對供電部45,46，係分別連接於發熱體42之兩端；及外殼31，係圍繞於隔熱體33之外側。A heating unit 30 as a heating means inside the heat treatment tube 11 is provided outside the outer tube 12 so as to surround the periphery of the outer tube 12. The heating unit 30 includes a heating element 42 that is formed in a ring shape, and a heat insulator 33 that is disposed around the outer circumference of the heating element 42. The power supply units 45 and 46 are connected to the heating unit as one of the fixing portions. The two ends of the body 42 and the outer casing 31 surround the outer side of the heat insulator 33.
發熱體42係以圍繞於外管12周圍之方式沿垂直方向設置至少一個以上。如第2、第3圖所示，發熱體42係以圍繞於外管12外周之方式構成為環狀。發熱體42之兩端部係相互靠近地固定而沒有接觸，成為非電性接觸之狀態。亦即，發熱體42係構成為不是完全電性狀態的圓形，而是形成為例如C字狀的環形。作為構成發熱體42之材料，係可使用例如Fe-Cr-Al合金、MOSi2 、SiC等之電阻發熱材料，其形狀可為第4(a)圖所示之線狀材料，亦可為第4(b)圖所示之板狀材料。又，如第2、第3、第5圖所示，於發熱體42之上下端分別交互地連接有複數個山峰部(突出部)42a及山谷部(缺口部)42b。亦即，發熱體42係形成為蛇行狀(波狀)。The heating element 42 is disposed at least one or more in a vertical direction so as to surround the periphery of the outer tube 12. As shown in FIGS. 2 and 3, the heating element 42 is formed in a ring shape so as to surround the outer circumference of the outer tube 12. Both end portions of the heating element 42 are fixed to each other without contact, and are in a state of non-electrical contact. In other words, the heating element 42 is formed in a circular shape that is not in a fully electrical state but is formed in, for example, a C-shaped ring shape. As the material constituting the heat generating element 42, the system may be used, for example, Fe-Cr-Al alloy, MOSi 2, SiC, etc. resistive heating material, the shape may be a thread-like material 4 as shown in (a) of FIG., May also be of 4(b) The plate material shown in the figure. Further, as shown in the second, third, and fifth figures, a plurality of mountain portions (protrusions) 42a and valley portions (notch portions) 42b are alternately connected to the lower end of the heating element 42. That is, the heating element 42 is formed in a meandering shape (wave shape).
一對供電部45,46之端部係分別連接於上述發熱體42的兩端部。一對供電部45,46係貫穿後述之隔熱體33(側壁部35)而固定於隔熱體33上。亦即，一對供電部45,46係用作為將發熱體42固定於隔熱體33之內壁的固定部。第5(a)圖顯示從發熱體42之中心側觀察(從處理管11側觀察)之供電部45,46周邊的局部放大圖(俯視圖)。如此，藉由作為固定部之一對供電部45,46，發熱體42可僅固定於一處(發熱體42之端部)。亦即，在一對供電部45,46以外，不進行使用銷等之保持體的固定。The end portions of the pair of power supply portions 45, 46 are respectively connected to both end portions of the heat generating body 42. The pair of power supply portions 45 and 46 are fixed to the heat insulator 33 through a heat insulator 33 (side wall portion 35) to be described later. In other words, the pair of power supply portions 45 and 46 are used as fixing portions for fixing the heat generating body 42 to the inner wall of the heat insulator 33. Fig. 5(a) is a partial enlarged view (plan view) of the vicinity of the power supply portions 45, 46 as viewed from the center side of the heating element 42 (as viewed from the side of the processing tube 11). As described above, the heat generating body 42 can be fixed only at one place (the end portion of the heat generating body 42) by the power supply portions 45, 46 as one of the fixing portions. In other words, the holding body using the pin or the like is not fixed except for the pair of power supply portions 45 and 46.
一對供電部45,46係由金屬等之導電性材料構成。透過一對供電部45,46而從發熱體42的一端朝另一端流動電流，藉此，可構成為加熱發熱體42而使得處理管11內昇溫。透過一對供電部45,46而對發熱體42進行的供電，係由控制器280控制。The pair of power supply portions 45, 46 are made of a conductive material such as metal. The electric current flows from one end of the heating element 42 to the other end through the pair of feeding portions 45, 46, whereby the heating element 42 can be heated to raise the temperature in the processing tube 11. The power supply to the heating element 42 through the pair of power supply units 45, 46 is controlled by the controller 280.
隔熱體33係以圍繞於發熱體42外周之方式設置。隔熱體33具備：上下端開口之圓筒狀側壁部35；及覆蓋側壁部35之上部開口的頂壁部34；隔熱體33係形成為下端開口之圓筒狀。隔熱體33係相對於外管12而形成為同心圓狀。側壁部35及頂壁部34係由例如纖維狀或球狀之氧化鋁(Al2 O3 )或氧化矽(SiO2 )等的隔熱材料形成。側壁部35及頂壁部34係分別藉由例如真空成型法等而一體成型。又，側壁部35不限定於一體成型之情況，還可藉由多層地堆疊複數個圓形之隔熱材而構成。藉由此種構成，可抑制應力被施加於側壁部35時之側壁部35的破損，或者可提高維護性。The heat insulator 33 is provided to surround the outer circumference of the heat generating body 42. The heat insulator 33 includes a cylindrical side wall portion 35 that is open at the upper and lower ends, and a top wall portion 34 that covers the upper portion of the side wall portion 35. The heat insulator 33 is formed in a cylindrical shape having a lower end opening. The heat insulator 33 is formed concentrically with respect to the outer tube 12. The side wall portion 35 and the top wall portion 34 are formed of, for example, a heat insulating material such as fibrous or spherical alumina (Al 2 O 3 ) or yttrium oxide (SiO 2 ). The side wall portion 35 and the top wall portion 34 are integrally molded by, for example, a vacuum forming method or the like. Further, the side wall portion 35 is not limited to the case of integral molding, and may be configured by stacking a plurality of circular heat insulating materials in a plurality of layers. According to this configuration, it is possible to suppress breakage of the side wall portion 35 when stress is applied to the side wall portion 35, or to improve maintainability.
外殼31係以圍繞於隔熱體33外周之方式設置。外殼31係形成為例如上端閉塞且下端開口之圓筒形狀。外殼31係由例如不鏽鋼(SUS)形成。隔熱體33之外周面與外殼31的內周面之間的間隙32，係可用作為進行空氣冷卻的空間。又，還可設置貫穿頂壁部34及外殼31的頂壁之排氣口，而以強制性地對隔熱體33與外管12之間的環境氣體進行空氣冷卻之方式構成。The outer casing 31 is provided to surround the outer periphery of the heat insulator 33. The outer casing 31 is formed in, for example, a cylindrical shape in which the upper end is closed and the lower end is open. The outer casing 31 is formed of, for example, stainless steel (SUS). A gap 32 between the outer circumferential surface of the heat insulator 33 and the inner circumferential surface of the outer casing 31 can be used as a space for air cooling. Further, an exhaust port penetrating the top wall portion 34 and the top wall of the outer casing 31 may be provided, and the ambient gas between the heat insulator 33 and the outer tube 12 may be forcibly cooled by air.
發熱體42具有當加熱時因熱膨脹而朝圓周方向或半徑方向伸展的特性。其結果，會有發熱體42與隔熱體33之內壁接觸、干涉的情況。尤其是，像本實施形態那樣當發熱體42形成為蛇行狀時，其延伸量增大而容易產生接觸。當發熱體42與隔熱體33之內壁接觸、干涉時，會產生發熱體42之局部溫度上昇(異常溫度上昇)，而導致發熱體42熔斷。另外，恐有應力被施加於發熱體42、隔熱體33上而造成此等構件之損傷的情況。另外，當因發熱體42朝半徑方向伸展而使得發熱體42與隔熱體33之內壁之間的距離涵蓋發熱體42之圓周方向成為不均勻時，發熱體42之溫度分布均一性會涵蓋圓周方向下降，而會產生基板處理之品質降低的情況。亦即，會有在發熱體42與隔熱體33之內壁的距離較近的部位，發熱體42之溫度異常上昇，或者，在發熱體42與隔熱體33之內壁的距離較遠的部位，發熱體42之溫度降低的情況。The heating element 42 has a characteristic of extending in the circumferential direction or the radial direction due to thermal expansion when heated. As a result, the heating element 42 may come into contact with and interfere with the inner wall of the heat insulator 33. In particular, when the heating element 42 is formed into a meandering shape as in the present embodiment, the amount of extension is increased and contact is likely to occur. When the heating element 42 comes into contact with and interferes with the inner wall of the heat insulator 33, a local temperature rise (abnormal temperature rise) of the heating element 42 occurs, and the heating element 42 is melted. Further, there is a fear that stress is applied to the heat generating body 42 and the heat insulator 33 to cause damage to the members. Further, when the distance between the heat generating body 42 and the inner wall of the heat insulator 33 is made uneven by the heating element 42 in the radial direction, the temperature distribution uniformity of the heat generating body 42 is covered. The circumferential direction is lowered, and the quality of substrate processing is lowered. In other words, the temperature of the heating element 42 rises abnormally at a portion where the distance between the heating element 42 and the inner wall of the heat insulator 33 is relatively high, or the distance between the heating element 42 and the inner wall of the heat insulating body 33 is long. The temperature of the heating element 42 is lowered.
在此，本實施形態中，至少於發熱體42處於室溫狀態時，發熱體42與隔熱體33之內壁之間的距離，係設定為隨著遠離作為固定部之供電部45,46而變大，藉此可解決上述課題。第6圖為本實施形態之昇溫前(室溫狀態的)加熱單元30的水平剖視圖。如第6圖所示，至少於發熱體42處於室溫狀態時，發熱體42與隔熱體33之內壁之間的距離，係設定為隨著遠離一對供電部45,46而逐漸地變大，圖中，成為A＜B＜C。Here, in the present embodiment, at least when the heating element 42 is at room temperature, the distance between the heating element 42 and the inner wall of the heat insulator 33 is set to be away from the power supply portion 45 as a fixing portion. This will increase the size of the problem. Fig. 6 is a horizontal cross-sectional view of the heating unit 30 before temperature rise (at room temperature) in the present embodiment. As shown in Fig. 6, at least when the heating element 42 is at room temperature, the distance between the heating element 42 and the inner wall of the heat insulator 33 is set to gradually move away from the pair of power supply portions 45, 46. It becomes larger, and in the figure, it becomes A<B<C.
在此狀態下，當使發熱體42昇溫至例如基板處理時之溫度時，發熱體42之各部分因熱膨脹而朝第8圖所示方向伸長。第8圖以箭頭方向及長度來分別顯示發熱體42之各部分的位移方向及位移量。發熱體42係藉由一對供電部45，46而固定於一個部位，所以，發熱體42之各部分係以一對供電部45,46附近之區域(以符號A1表示之區域)為起點，以朝外側膨脹之方式(以遠離一對供電部45,46之方式)進行位移。又，發熱體42之位移係隨著遠離一對供電部45,46而變大。In this state, when the heating element 42 is heated to a temperature at the time of substrate processing, for example, each portion of the heating element 42 is elongated in the direction shown in Fig. 8 due to thermal expansion. Fig. 8 shows the displacement direction and the displacement amount of each portion of the heating element 42 in the direction of the arrow and the length. Since the heating element 42 is fixed to one portion by the pair of feeding portions 45 and 46, each portion of the heating element 42 is a region starting from the vicinity of the pair of feeding portions 45 and 46 (the region indicated by the symbol A1). The displacement is performed in such a manner as to expand outward (in a manner away from the pair of power supply portions 45, 46). Further, the displacement of the heating element 42 becomes larger as it goes away from the pair of power supply portions 45, 46.
其結果，至少於發熱體42處於基板處理時之溫度狀態時，發熱體42與隔熱體33之內壁之間的距離，係涵蓋發熱體42之圓周方向成為相等。第7圖為本實施形態之昇溫後(基板處理時之溫度狀態的)加熱單元30的水平剖視圖。As a result, at least when the heating element 42 is in the temperature state at the time of substrate processing, the distance between the heating element 42 and the inner wall of the heat insulator 33 is such that the circumferential direction of the heating element 42 is equal. Fig. 7 is a horizontal cross-sectional view of the heating unit 30 after the temperature rise in the embodiment (in the temperature state at the time of substrate processing).
如第7圖所示，至少於發熱體42處於基板處理時之溫度狀態時，發熱體42與隔熱體33之內壁之間的距離，因熱膨脹而涵蓋發熱體42之圓周方向成為相等，圖中，成為A≒B≒C。As shown in Fig. 7, at least when the heating element 42 is in the temperature state at the time of substrate processing, the distance between the heating element 42 and the inner wall of the heat insulator 33 is equal to the circumferential direction of the heating element 42 due to thermal expansion. In the figure, it becomes A≒B≒C.
(3)基板處理製程(3) substrate processing process
其次，簡單地說明作為藉該基板處理裝置實施之基板處理製程的一例之成膜製程。在以下之說明中，基板處理裝置之各部分的動作，係由控制器280所控制。Next, a film forming process which is an example of a substrate processing process performed by the substrate processing apparatus will be briefly described. In the following description, the operation of each part of the substrate processing apparatus is controlled by the controller 280.
如第1圖所示，藉由晶舟昇降器21將裝填(充填晶圓)了複數片晶圓1之晶舟22抬起並搬入(裝載晶舟)處理室14內。在此狀態下，密封蓋20成為密封歧管16之下端開口的狀態。As shown in Fig. 1, the wafer boat 22 loaded with the plurality of wafers 1 is filled up and carried into the processing chamber 14 by the boat lifter 21. In this state, the seal cap 20 is in a state in which the lower end of the seal manifold 16 is open.
以處理管11之內部成為既定壓力(真空度)的方式透過排氣管17進行真空排氣。另外，以處理管11之內部成為既定溫度的方式，藉加熱單元30進行加熱。亦即，藉由透過一對供電部45,46從環狀部42R的一端朝另一端流動電流，來加熱蛇行狀之環狀部42R以使處理管11內昇溫。此時，以處理室14內成為既定溫度分布之方式，根據溫度感測器24檢測出之溫度資訊，來反饋控制加熱單元30朝發熱體42通電的程度。接著，藉由旋轉機構25使晶舟22旋轉，而使晶圓1旋轉。Vacuum evacuation is performed through the exhaust pipe 17 so that the inside of the process pipe 11 becomes a predetermined pressure (vacuum degree). Further, heating is performed by the heating unit 30 so that the inside of the processing tube 11 becomes a predetermined temperature. In other words, by flowing a current from one end of the annular portion 42R to the other end through the pair of power supply portions 45, 46, the meandering annular portion 42R is heated to raise the temperature inside the processing tube 11. At this time, the degree of energization of the heating unit 30 to the heating element 42 is feedback-controlled based on the temperature information detected by the temperature sensor 24 so that the inside of the processing chamber 14 becomes a predetermined temperature distribution. Next, the wafer boat 22 is rotated by the rotating mechanism 25 to rotate the wafer 1.
當蛇行狀之環狀部42R加熱時，會因熱膨脹而朝周方向或半徑方向伸展。根據本實施形態，可確保沿環狀部42R之周方向及半徑方向的移動量大於以往之移動量。另外，即使環狀部42R因熱膨脹而朝周方向伸展，只要其延伸量未滿該移動量(最大為第2寬度(b))，仍可抑制環狀部42R與保持體41之干涉(接觸)的情況發生。其結果，可抑制保持體41之脫落等。另外，可減低施加於環狀部42R的壓縮應力，可抑制環狀部42R的變形、破裂或短路等。When the meandering annular portion 42R is heated, it expands in the circumferential direction or the radial direction due to thermal expansion. According to the present embodiment, it is possible to ensure that the amount of movement in the circumferential direction and the radial direction of the annular portion 42R is larger than the conventional movement amount. Further, even if the annular portion 42R is extended in the circumferential direction due to thermal expansion, if the amount of extension is less than the amount of movement (maximum to the second width (b)), interference between the annular portion 42R and the holding body 41 can be suppressed (contact). The situation happened. As a result, it is possible to suppress the falling off of the holding body 41 and the like. Further, the compressive stress applied to the annular portion 42R can be reduced, and deformation, cracking, short-circuiting, or the like of the annular portion 42R can be suppressed.
接著，將控制為既定流量之原料氣體通過氣體導入管23導入處理室14內。導入之原料氣體流通於處理室14內後，從內管13之上端開口流出至排氣通道18內而從排氣管17排出。原料氣體在通過處理室14內時與晶圓1的表面接觸，此時，晶圓1受到處理，例如，藉熱CVD反應而於晶圓1表面上堆積(沉積)薄膜。Next, the material gas controlled to a predetermined flow rate is introduced into the processing chamber 14 through the gas introduction pipe 23. After the introduced material gas flows through the processing chamber 14, it flows out from the upper end opening of the inner tube 13 into the exhaust passage 18 and is discharged from the exhaust pipe 17. The material gas comes into contact with the surface of the wafer 1 as it passes through the processing chamber 14. At this time, the wafer 1 is subjected to processing, for example, a film is deposited (deposited) on the surface of the wafer 1 by a thermal CVD reaction.
在經過了預先設定之處理時間後，從惰性氣體供給源(未圖示)供給惰性氣體，將處理室14內換成惰性氣體，並使處理室14內之壓力返回至常壓。又，使旋轉機構25的動作停止。After the predetermined processing time has elapsed, the inert gas is supplied from an inert gas supply source (not shown), the inside of the processing chamber 14 is replaced with an inert gas, and the pressure in the processing chamber 14 is returned to the normal pressure. Further, the operation of the rotating mechanism 25 is stopped.
然後，藉由晶舟昇降器21使密封蓋20下降，將歧管16之下端開口打開，並將保持完成處理的晶圓1之晶舟22從歧管16之下端搬出(晶舟卸載：Boat Unloading)至處理管11的外部。然後，從晶舟21取出(晶圓取出：Wafer Discharge)完成處理的晶圓1。Then, the sealing cover 20 is lowered by the boat lifter 21, the lower end opening of the manifold 16 is opened, and the wafer boat 22 of the wafer 1 holding the completed processing is carried out from the lower end of the manifold 16 (boat unloading: Boat Unloading) to the outside of the processing tube 11. Then, the wafer 1 which has been processed is taken out from the wafer boat 21 (wafer discharge: Wafer Discharge).
(4)本實施形態之效果(4) Effect of this embodiment
根據本實施形態，可獲得以下所示(a)～(e)中之一個或複數個效果。According to this embodiment, one or a plurality of effects (a) to (e) shown below can be obtained.
(a)在本實施形態之設於環狀部42R的上下端之各山谷部42b的末端(谷底部)設有形成作為缺口部之保持體承受部42c。保持體承受部42c之寬度(第2寬度(b))，係構成為比山谷部42b之寬度(第1寬度(a))更寬。環狀部42R係藉由將一對供電部45,46貫穿隔熱體33的側壁而固定，並藉保持體41將各山谷部42b分別固定於隔熱體33的內周側壁，而被保持於隔熱體33之內周側。保持體41係以配置於各保持體承受部42c內且固定於隔熱體33上的方式構成。(a) In the end (the bottom of the valley) of each of the valley portions 42b provided at the upper and lower ends of the annular portion 42R of the present embodiment, a holder receiving portion 42c as a notch portion is formed. The width (second width (b)) of the holder receiving portion 42c is configured to be wider than the width (first width (a)) of the valley portion 42b. The annular portion 42R is fixed by penetrating the pair of power supply portions 45, 46 through the side wall of the heat insulator 33, and is fixed to the inner peripheral side wall of the heat insulator 33 by the holding body 41, respectively. On the inner peripheral side of the heat insulator 33. The holding body 41 is configured to be disposed in each of the holder receiving portions 42c and fixed to the heat insulator 33.
蛇行狀之環狀部42R具有因熱膨脹而朝周方向伸展的特性。於是，當環狀部42R之周方向的延伸量超過一定量而使得移動量變為零時，則塑性壓力會施加於環狀部42R之各部分，而會有環狀部42R變形的情況。例如，環狀部42R具有以山谷部42b的寬度(第1寬度(a))變窄之方式變形的情況。根據本實施形態，將配置保持體41之保持體承受部42c之寬度(第2寬度(b))構成為比山谷部42b的寬度(第1寬度(a))寬。因此，即使環狀部42R變形而使得山谷部42b之寬度(第1寬度(a))變窄，保持體41與環狀部42R仍可構成為不容易干涉(接觸)，可抑制保持體41之剪斷。The meandering annular portion 42R has a characteristic of extending in the circumferential direction due to thermal expansion. Then, when the amount of extension of the annular portion 42R in the circumferential direction exceeds a certain amount and the amount of movement becomes zero, the plastic pressure is applied to each portion of the annular portion 42R, and the annular portion 42R may be deformed. For example, the annular portion 42R is deformed so that the width (the first width (a)) of the valley portion 42b is narrowed. According to the present embodiment, the width (second width (b)) of the holder receiving portion 42c in which the holder 41 is placed is configured to be wider than the width (first width (a)) of the valley portion 42b. Therefore, even if the annular portion 42R is deformed so that the width (the first width (a)) of the valley portion 42b is narrowed, the holding body 41 and the annular portion 42R can be configured to be less likely to interfere (contact), and the holding body 41 can be suppressed. Cut off.
又，假設於各山谷部42b的末端不設置保持體承受部42c，而直接將保持體41配置於各山谷部42b內，則會有因山谷部42b的寬度(第1寬度(a))變窄，致使環狀部42R與保持體41干涉(接觸)而造成其中任一方的損傷，或者，保持體41受到山谷部42b挾持而被剪斷的情況。Further, it is assumed that the holder body receiving portion 42c is not provided at the end of each of the valley portions 42b, and the holder 41 is directly disposed in each of the valley portions 42b, and the width (first width (a)) of the valley portion 42b is changed. The narrow portion causes the annular portion 42R to interfere (contact) with the holding body 41 to cause damage to either one of them, or the holding body 41 is gripped by the valley portion 42b and is sheared.
(b)另外，如上述構成之結果，可確保沿環狀部42R之周方向的移動量大於以往之移動量。亦即，可確保沿環狀部42R之周方向的移動量為最大相當於保持體承受部42c之寬度(第2寬度(b))的大小。其結果，即使環狀部42R因熱膨脹而朝周方向伸展，仍可抑制環狀部42R與保持體41之干涉(接觸)的情況發生，可抑制保持體41之脫落等。另外，環狀部42R與保持體41不容易干涉(接觸)，所以，可減低施加於環狀部42R的壓縮應力，可抑制環狀部42R的變形、破裂或短路等。(b) Further, as a result of the above configuration, it is possible to ensure that the amount of movement in the circumferential direction of the annular portion 42R is larger than the conventional movement amount. In other words, the amount of movement in the circumferential direction of the annular portion 42R can be ensured to be the maximum corresponding to the width (second width (b)) of the holder receiving portion 42c. As a result, even if the annular portion 42R is extended in the circumferential direction by thermal expansion, interference (contact) between the annular portion 42R and the holding body 41 can be suppressed, and the falling of the holding body 41 can be suppressed. Further, since the annular portion 42R and the holding body 41 do not easily interfere (contact), the compressive stress applied to the annular portion 42R can be reduced, and deformation, cracking, short-circuiting, or the like of the annular portion 42R can be suppressed.
第18圖(請追加特願2009-169938之第17圖)為顯示本發明之第1實施形態的發熱體之熱變形的狀態之示意圖，第18(a)圖顯示昇溫前之狀態，第18(b)圖顯示昇溫後之狀態。由第18圖可知，如區域A10所示，藉由設置構成為寬缺口部之保持體承受部42c，可大幅地確保沿環狀部42R之周方向的移動量，可抑制環狀部42R與保持體41之干涉(接觸)，抑制保持體41之脫落等。另外，可減低施加於環狀部42R的壓縮應力，可抑制環狀部42R的變形、破裂或短路等。又，如上述，即使假設環狀部42R發生變形，藉由將保持體41配置於保持體承受部42c，仍可成為不容易使保持體41受到山谷部42b挾持的構成，可抑制保持體41之破損或剪斷。Fig. 18 is a schematic view showing a state of thermal deformation of the heat generating body according to the first embodiment of the present invention, and Fig. 18(a) is a view showing a state before temperature rise, and 18th. (b) The figure shows the state after the temperature rise. As can be seen from Fig. 18, as shown in the area A10, by providing the holder receiving portion 42c which is a wide notch portion, the amount of movement in the circumferential direction of the annular portion 42R can be largely ensured, and the annular portion 42R can be suppressed. The interference (contact) of the holding body 41 suppresses the falling of the holding body 41 and the like. Further, the compressive stress applied to the annular portion 42R can be reduced, and deformation, cracking, short-circuiting, or the like of the annular portion 42R can be suppressed. In addition, as described above, even if the annular portion 42R is deformed, the holder 41 is placed on the holder receiving portion 42c, so that the holder 41 can be prevented from being gripped by the valley portion 42b, and the holder 41 can be suppressed. Broken or cut.
使用第17圖來說明不具備保持體承受部42c之發熱體的熱變形的狀態，作為參考。The state of thermal deformation of the heat generating body which does not have the holding body receiving part 42c is demonstrated using FIG.
第17(a)圖顯示不具備保持體承受部42c之環狀部42R'在昇溫前之狀態。於環狀部42R'之上下端分別交互地連接有複數個山峰部42a'及山谷部42b'，環狀部42R'係形成為蛇行狀(波狀)。環狀部42R'係藉保持體41'將各山谷部42b'分別固定於隔熱體的內周側壁，而被保持於隔熱體(未圖示)之內周側。又，保持體41'係直接配置於山谷部42b'內。第17(b)圖顯示環狀部42R'在昇溫後的狀態。如上述，蛇行狀之環狀部42R'因熱膨脹而朝周方向伸展。第17(b)圖顯示環狀部42R'之周方向的延伸量超過一定量，而使得沿環狀部42R'之周方向的移動量變為零之狀態(保持體41'與環狀部42R'干涉的狀態)。Fig. 17(a) shows a state before the temperature rise of the annular portion 42R' not including the holder receiving portion 42c. A plurality of mountain portions 42a' and valley portions 42b' are alternately connected to the lower end of the annular portion 42R', and the annular portion 42R' is formed in a serpentine shape (wave shape). The annular portion 42R' is fixed to the inner peripheral side wall of the heat insulator by the holding body 41', and is held by the inner peripheral side of the heat insulator (not shown). Further, the holding body 41' is disposed directly in the valley portion 42b'. Fig. 17(b) shows a state in which the annular portion 42R' is heated. As described above, the meandering annular portion 42R' extends in the circumferential direction due to thermal expansion. 17(b) shows a state in which the amount of extension of the annular portion 42R' in the circumferential direction exceeds a certain amount, and the amount of movement in the circumferential direction of the annular portion 42R' becomes zero (the holding body 41' and the annular portion 42R) 'The state of interference'.
當環狀部42R'進一步伸展時，成為第17(c)圖所示之狀態。第17(c)圖顯示因熱變形而產生保持體41'之剪斷、環狀部42R'之破裂、環狀部42R'之短路的狀態。如上述，當周方向的延伸量超過一定量時，保持體41'與環狀部42R'干涉，塑性應力會施加於環狀部42R'，使得環狀部42R'發生變形。在符號A6所表示之區域，顯示保持體41'被山谷部42b'從兩側挾持而剪斷之狀態，在符號A7所表示之區域，顯示環狀部42R'產生破裂之狀態，在符號A8所表示之區域，顯示環狀部42R'產生短路之狀態。第17(d)圖為第17(c)圖所示之環狀部42R'的側視圖，顯示因熱變形而產生保持體41'之脫落的狀態。在符號A9所表示之區域，顯示保持體41'因環狀部42R'之變形而從隔熱體抬起而將要脫離之狀態。When the annular portion 42R' is further extended, it becomes a state shown in Fig. 17(c). Fig. 17(c) shows a state in which the holding body 41' is sheared by the thermal deformation, the annular portion 42R' is broken, and the annular portion 42R' is short-circuited. As described above, when the amount of extension in the circumferential direction exceeds a certain amount, the holding body 41' interferes with the annular portion 42R', and plastic stress is applied to the annular portion 42R', so that the annular portion 42R' is deformed. In the region indicated by the symbol A6, the display holder 41' is gripped by the valley portion 42b' from both sides and is cut, and in the region indicated by the symbol A7, the annular portion 42R' is broken, and the symbol A8 is displayed. The area indicated shows a state in which the annular portion 42R' is short-circuited. Fig. 17(d) is a side view of the annular portion 42R' shown in Fig. 17(c), showing a state in which the holding body 41' is detached due to thermal deformation. In the region indicated by the symbol A9, the state in which the holding body 41' is lifted from the heat insulator due to the deformation of the annular portion 42R' is displayed.
(c)根據本實施形態，如第19(請追加特願2009-169938之第5(a)(b)圖)(b)圖所示，環狀部42R之外周面與側壁部35的內周面，係構成為不接觸而以相隔既定之間隔(第3寬度(c))的方式固定。(c) According to the present embodiment, as shown in the figure (b) of the 19th (please add the fifth (a) and (b) of the Japanese Patent Application No. 2009-169938), the outer peripheral surface of the annular portion 42R and the inner side of the side wall portion 35 are provided. The circumferential surface is fixed so as not to be in contact with each other at a predetermined interval (third width (c)).
以此方式構成之結果，可沿環狀部42R之半徑方向確保既定大小的移動量。亦即，環狀部42R可一面沿環狀部42R之半徑方向確保最大相當於(第3寬度(c))的移動量一面固定。其結果，即使環狀部42R因熱膨脹而朝半徑方向伸展，只要該延伸量未滿該移動量(最大為第3寬度(c))，則仍可抑制環狀部42R與隔熱體33之內周壁的接觸。另外，可抑制環狀部42R之局部溫度上昇(異常溫度上昇)或環狀部42R的熔斷，可延長環狀部42R或隔熱體33之壽命。另外，可使處理室14內之溫度分布達成均勻化。As a result of the configuration in this manner, the amount of movement of a predetermined size can be ensured in the radial direction of the annular portion 42R. In other words, the annular portion 42R can be fixed while ensuring the maximum amount of movement (the third width (c)) in the radial direction of the annular portion 42R. As a result, even if the annular portion 42R extends in the radial direction due to thermal expansion, if the amount of movement is less than the amount of movement (maximum to the third width (c)), the annular portion 42R and the heat insulator 33 can be suppressed. Contact of the inner peripheral wall. Further, it is possible to suppress the local temperature rise (abnormal temperature rise) of the annular portion 42R or the melting of the annular portion 42R, and the life of the annular portion 42R or the heat insulator 33 can be prolonged. In addition, the temperature distribution in the processing chamber 14 can be made uniform.
(d)根據本實施形態，藉由擴大設於環狀部42R之上下端的各山谷部42b的末端(谷底部)的寬度而設置保持體承受部42c，可獲得上述效果中至少一個以上的效果。亦即，不會大幅地減少環狀部42R之表面積(發熱面積)(不會降低加熱單元30之加熱性能)，可獲得上述效果中至少一個以上的效果。(d) According to the present embodiment, by providing the holder receiving portion 42c by widening the width of the end (valley bottom) of each of the valley portions 42b provided at the lower end of the annular portion 42R, at least one of the above effects can be obtained. . That is, the surface area (heat generating area) of the annular portion 42R is not greatly reduced (the heating performance of the heating unit 30 is not lowered), and at least one of the above effects can be obtained.
(e)根據本實施形態，藉由擴大各山谷部42b的末端(谷底部)的寬度而設置保持體承受部42c，可達成各山谷部42b之末端(谷底部)的電流密度之分散，實現環狀部42R之長壽化。另外，可減小環狀部42R內之溫度差，可提高基板處理時之基板的溫度均一性。(e) According to the present embodiment, by providing the holder receiving portion 42c by widening the width of the end (valley bottom) of each valley portion 42b, the dispersion of the current density at the end (valley bottom) of each valley portion 42b can be achieved. The longevity of the annular portion 42R. Further, the temperature difference in the annular portion 42R can be reduced, and the temperature uniformity of the substrate during substrate processing can be improved.
第20圖為例示不具備保持體承受部之環狀部42R'內的電流路徑C之示意圖，第21圖為例示本發明之第1實施形態的環狀部42R內的電流路徑C之示意圖。Fig. 20 is a schematic view showing a current path C in the annular portion 42R' not including the holder receiving portion, and Fig. 21 is a schematic view showing a current path C in the annular portion 42R according to the first embodiment of the present invention.
由第20圖可知，在山谷部42b'的末端(谷底部)，電流係以描繪成陡峻之曲線的方式流動。亦即，在山谷部42b'的末端(谷底部)，電流密度增大，與末端以外之部分相比，其發熱量增大，而使得局部溫度變得容易上昇。當環狀部42R'內之溫度差增大時，因熱膨脹量之差而對環狀部42R'施加塑性應力，恐有環狀部42R'變形破損的可能性。As can be seen from Fig. 20, at the end (the bottom of the valley) of the valley portion 42b', the current flows as a steep curve. That is, at the end (the bottom of the valley) of the valley portion 42b', the current density is increased, and the amount of heat generation is increased as compared with the portion other than the end portion, so that the local temperature is likely to rise. When the temperature difference in the annular portion 42R' is increased, plastic stress is applied to the annular portion 42R' due to the difference in the amount of thermal expansion, and the annular portion 42R' may be deformed and broken.
由第21圖可知，在山谷部42b之末端(谷底部)設置大徑的保持體承受部42c，在山谷部42b的末端，電流係以描繪成較平緩之曲線的方式流動。亦即，在山谷部42b的末端(谷底部)，與第20圖之情況比較，可減小電流密度，減小與其他部分之發熱量的差，可抑制局部溫度之上昇。當環狀部42R內之溫度差減小時，因熱膨脹量之差而使得施加於環狀部42R'之塑性應力減小，可抑制環狀部42R之變形、破損。另外，可減小環狀部42R內之溫度差，可提高基板處理時之基板的溫度均一性。As can be seen from Fig. 21, the holder receiving portion 42c having a large diameter is provided at the end (the bottom of the valley) of the valley portion 42b, and the current flows at a tip end of the valley portion 42b so as to be drawn in a gentle curve. That is, at the end (the bottom of the valley) of the valley portion 42b, compared with the case of Fig. 20, the current density can be reduced, the difference from the heat generation amount of the other portions can be reduced, and the increase in the local temperature can be suppressed. When the temperature difference in the annular portion 42R is reduced, the plastic stress applied to the annular portion 42R' is reduced by the difference in the amount of thermal expansion, and deformation and breakage of the annular portion 42R can be suppressed. Further, the temperature difference in the annular portion 42R can be reduced, and the temperature uniformity of the substrate during substrate processing can be improved.
又，以將保持體承受部42c之形狀設為橢圓形較為適宜。藉由此種構成，可更進一步地分散電性密度。另外，可增大保持體承受部42c周邊之強度。另外，可增大發熱體42之面積。Further, it is preferable that the shape of the holder receiving portion 42c is an elliptical shape. With such a configuration, the electrical density can be further dispersed. In addition, the strength of the periphery of the holder receiving portion 42c can be increased. In addition, the area of the heating element 42 can be increased.
(6)變化例(6) Variations
以下，說明本實施形態之變化例。Hereinafter, a modification of the embodiment will be described.
(變化例)(variation)
本發明之保持體承受部42c，不限定於像上述實施形態那樣為橢圓形的情況，亦可形成為具有比山谷部42b的寬度(第1寬度(c))還大的直徑(與第2寬度(b)相同大小之直徑)之圓形缺口部。第22(請追加特願2009-169938之第6(a)(b)圖)(a)圖為本發明之第1實施形態的變化例之環狀部42R之局部放大圖，第22(b)圖為放大部分之側視圖。The holder receiving portion 42c of the present invention is not limited to the case of being elliptical as in the above embodiment, and may be formed to have a larger diameter than the width (first width (c)) of the valley portion 42b (and the second A circular notch with a width (b) of the same size). (a) (a) is a partially enlarged view of the annular portion 42R according to a modification of the first embodiment of the present invention, and 22 (b) The figure is a side view of the enlarged part.
根據本變化例，可更加地確保沿環狀部42R之上下方向的移動量大於以往之移動量。亦即，可將沿環狀部42R之上下方向的移動量，設成最大相當於保持體承受部42c之直徑(第2寬度(b))的大小。其結果，即使環狀部42R因熱膨脹而於上下方向偏移，只要其偏移量未滿該移動量(最大為第2寬度(b))，即可抑制環狀部42R與保持體41之干涉(接觸)。其結果，可抑制保持體41之脫落等。另外，可減低施加於環狀部42R的壓縮應力，可抑制環狀部42R的變形、破裂或短路等。According to the present modification, it is possible to more securely ensure that the amount of movement in the upper and lower directions of the annular portion 42R is larger than the conventional amount of movement. In other words, the amount of movement in the vertical direction of the annular portion 42R can be set to a maximum corresponding to the diameter (second width (b)) of the holder receiving portion 42c. As a result, even if the annular portion 42R is displaced in the vertical direction due to thermal expansion, if the amount of displacement is less than the amount of movement (maximum second width (b)), the annular portion 42R and the holder 41 can be suppressed. Interference (contact). As a result, it is possible to suppress the falling off of the holding body 41 and the like. Further, the compressive stress applied to the annular portion 42R can be reduced, and deformation, cracking, short-circuiting, or the like of the annular portion 42R can be suppressed.
另外，根據本變化例，藉由將保持體承受部42c形成為具有比山谷部42b的寬度(第1寬度(c))還大的直徑(與第2寬度(b)相同大小之直徑)之圓形缺口部，可達成各山谷部42b之末端(谷底部)的電流密度之進一步的分散。亦即，在各山谷部42b的末端，電流係以描繪成更平緩之曲線的方式流動，可進一步地抑制環狀部42R之變形、破損，可使傳導於基板之溫度達成均勻，可進一步提高基板處理之溫度均一性。Further, according to the present modification, the holder receiving portion 42c is formed to have a larger diameter (the same size as the second width (b)) than the width (the first width (c)) of the valley portion 42b. Further, the circular notch portion can achieve further dispersion of the current density at the end (valley bottom) of each valley portion 42b. In other words, at the end of each valley portion 42b, the current flows in a more gradual curve, and deformation and breakage of the annular portion 42R can be further suppressed, and the temperature of the substrate can be made uniform, which can be further improved. Temperature uniformity of substrate processing.
(其他變化例)(Other variations)
根據本案發明者等的檢討，在將一對供電部45,46固定於隔熱體33的情況，因熱膨脹而導致之環狀部42R的各部分之位置偏移量，係隨著離開一對供電部45,46而累積變大。在該情況，環狀部42R之移動量，不需要涵蓋環狀部42R的全周都均等，可根據位置偏移量或位置偏移方向來適宜地調整。在本變化例中，未將保持體承受部42c之寬度(或直徑)設成涵蓋環狀部42R的全周都為均等大小，而是根據位置偏移量或位置偏移方向來作局部變動。例如，將保持體承受部42c之寬度設定為隨著遠離一對供電部45,46而變大。According to the review by the inventors of the present invention, when the pair of power supply portions 45 and 46 are fixed to the heat insulator 33, the positional displacement amount of each portion of the annular portion 42R due to thermal expansion is separated from the pair. The power supply units 45, 46 are cumulatively larger. In this case, the amount of movement of the annular portion 42R does not need to be uniform over the entire circumference of the annular portion 42R, and can be appropriately adjusted in accordance with the positional shift amount or the positional shift direction. In the present modification, the width (or diameter) of the holder receiving portion 42c is not set so as to cover the entire circumference of the annular portion 42R to be equal, but to be locally changed according to the positional shift amount or the positional shift direction. . For example, the width of the holder receiving portion 42c is set to be larger as it goes away from the pair of power supply portions 45, 46.
第23(請追加特願2009-169938之第7(a)(b)(c)圖)(a)圖為本發明之第1實施形態的變化例之加熱單元30之局部放大圖，第23(b)圖為以符號A1表示之區域中的環狀部42R之局部放大圖，第23(c)圖為以符號A2表示之區域中的環狀部42R之局部放大圖。由第7圖可知，遠離一對供電部45,46之區域(例如，以符號A2表示之區域)中的保持體承受部42c之寬度(第1寬度(a2))，係設定為比接近於一對供電部45,46之區域(例如，以符號A1表示之區域)中的保持體承受部42c之寬度(第1寬度(a1))還大。(23) (a) (a) (b) (c) of the first embodiment of the present invention, and a part of the heating unit 30 according to a modification of the first embodiment of the present invention, the 23rd (b) is a partially enlarged view of the annular portion 42R in the region indicated by the symbol A1, and FIG. 23(c) is a partially enlarged view of the annular portion 42R in the region indicated by the symbol A2. As can be seen from Fig. 7, the width (the first width (a2)) of the holder receiving portion 42c in the region away from the pair of feeding portions 45, 46 (for example, the region indicated by the symbol A2) is set to be close to The width (first width (a1)) of the holder receiving portion 42c in the region of the pair of power supply portions 45, 46 (for example, the region indicated by the symbol A1) is also large.
根據本變化例，可分別於環狀部42R之各部分確保必要的移動量，一面抑制環狀部42R與保持體41之干涉(接觸)，一面於環狀部42R之各部中分別減少多餘的移動量，提高環狀部42R之保持穩定性。又，假設於第7圖中，將保持體承受部42c之寬度涵蓋環狀部42R全周皆均等地設定為第1寬度(a2)，則一對供電部45,46附近之環狀部42R的延伸量變得過大，致使環狀部42R之保持變得不穩定。另外，若將保持體承受部42c之寬度涵蓋環狀部42R全周均等地設定為第1寬度(a1)，則遠離一對供電部45,46之環狀部42R的延伸量變得過小，環狀部42R與保持體41容易相互干涉(接觸)，使得塑性應力容易被施加於環狀部42R。According to the present modification, the amount of movement required for each portion of the annular portion 42R can be suppressed, and the interference (contact) between the annular portion 42R and the holding body 41 can be suppressed, and the excess portion can be reduced in each of the annular portions 42R. The amount of movement increases the retention stability of the annular portion 42R. In addition, in the seventh drawing, the width of the holder receiving portion 42c is set to the first width (a2) evenly over the entire circumference of the annular portion 42R, and the annular portion 42R near the pair of feeding portions 45, 46 is provided. The amount of extension becomes too large, so that the retention of the annular portion 42R becomes unstable. In addition, when the width of the holder receiving portion 42c is set to the first width (a1) uniformly over the entire circumference of the annular portion 42R, the amount of extension of the annular portion 42R away from the pair of feeding portions 45, 46 is too small, and the ring is too small. The portion 42R and the holding body 41 easily interfere with each other (contact), so that plastic stress is easily applied to the annular portion 42R.
另外，根據本變化例，藉由分別將各保持體承受部42c之大小設成所需之最小限度，不會無益地減少環狀部42R之表面積(發熱面積)，可抑制加熱單元30之加熱性能的降低。Further, according to the present modification, by setting the size of each of the holder receiving portions 42c to a minimum required, the surface area (heat generating area) of the annular portion 42R is not unnecessarily reduced, and heating of the heating unit 30 can be suppressed. Reduced performance.
參照第8圖及第9圖，說明環狀部42R之熱變形的狀態，作為參考。The state of thermal deformation of the annular portion 42R will be described with reference to Figs. 8 and 9 for reference.
第8圖為顯示環狀部42R之膨脹方向的示意圖。如第8圖所示，因為一對供電部45,46被固定於隔熱體33上，所以，環狀部42R之各部分不會呈同心圓狀膨脹，而是以一對供電部45,46附近之區域(以符號A13表示之區域)為基點分別朝圖中箭頭所示的各方向膨脹。因此，環狀部42R之各部分的位置偏移量，隨著離開一對供電部45,46而累積變大。Fig. 8 is a schematic view showing the direction in which the annular portion 42R is expanded. As shown in Fig. 8, since the pair of power supply portions 45, 46 are fixed to the heat insulator 33, the respective portions of the annular portion 42R do not expand concentrically, but a pair of power supply portions 45. The area near 46 (the area indicated by symbol A13) is expanded as a base point in each direction indicated by the arrow in the figure. Therefore, the positional shift amount of each portion of the annular portion 42R is increased as it leaves the pair of power supply portions 45, 46.
第9圖為顯示與環狀部42R之熱膨脹有關的測量結果之示意圖。在第9圖所示之測量中，在20℃～1220℃之溫度區域，藉由線膨脹係數為15×10-6 的KANTHAL APM(登錄商標)來製成環狀部42R。又，設20℃時之環狀部42R的直徑為481mm。另外，一面固定一對供電部45,46附近之區域，一面將環狀部42R從20℃昇溫至1220℃。因昇溫而產生之直徑的延伸量=(環狀部42R之長度)×(1220-20)×15×10-6 mm，1220℃時之環狀部42R的直徑為490.2mm。環狀部42R之各部分的位置偏移量係如圖所示般，隨著離開一對供電部45,46而逐漸變大(以符號A13表示之區域為基點，為3.8mm、6.5mm、8.6mm)，在最離開一對供電部45,46的部位成為最大(9.2mm)。另外，在最離開一對供電部45,46的部位，於周方向幾乎沒有位置偏移，而僅於半徑方向產生位置偏移。因此，在最離開一對供電部45,46的部位，亦可不用像第23(c)圖所示那樣擴大保持體承受部42c之寬度。Fig. 9 is a view showing the measurement results relating to the thermal expansion of the annular portion 42R. In the measurement shown in Fig. 9, the annular portion 42R was formed by a KANTHAL APM (registered trademark) having a linear expansion coefficient of 15 × 10 -6 in a temperature range of 20 °C to 1220 °C. Further, the diameter of the annular portion 42R at 20 ° C was 481 mm. Further, the annular portion 42R is heated from 20 ° C to 1220 ° C while fixing the region in the vicinity of the pair of power supply portions 45, 46. The elongation of the diameter due to the temperature rise = (the length of the annular portion 42R) × (1220 - 20) × 15 × 10 -6 mm, and the diameter of the annular portion 42R at 1220 ° C is 490.2 mm. As shown in the figure, the positional shift amount of each portion of the annular portion 42R gradually increases as it leaves the pair of power supply portions 45, 46 (the area indicated by the symbol A13 is the base point, and is 3.8 mm, 6.5 mm, 8.6 mm) is the largest (9.2 mm) at the portion that is the most separated from the pair of power supply portions 45, 46. Further, in the portion that is most separated from the pair of power supply portions 45, 46, there is almost no positional shift in the circumferential direction, and only a positional shift occurs in the radial direction. Therefore, it is not necessary to enlarge the width of the holder receiving portion 42c as shown in Fig. 23(c) at the portion which is the most separated from the pair of power supply portions 45, 46.
(再一其他變化例)(Another variation)
在本變化例中，於環狀部42R之全周各部分中的至少一部分，將保持體承受部42c與保持體41之相對位置設定為不同。亦即，不是使保持體承受部42c之寬度局部變動，而是藉由調整配置於保持體承受部42c之保持體41的位置，來局部地改變沿環狀部42R之周方向的移動量。In the present modification, at least a part of the entire circumference of each portion of the annular portion 42R is set to be different from the relative position of the holder receiving portion 42c and the holding body 41. In other words, the amount of movement in the circumferential direction of the annular portion 42R is locally changed by adjusting the position of the holder 41 disposed on the holder receiving portion 42c instead of locally changing the width of the holder receiving portion 42c.
第24(請追加特願2009-169938之第8(a)(b)(c)圖)(a)圖為本發明之第1實施形態的變化例之加熱單元30之局部放大圖，第24(b)圖為以符號A3表示之區域中的環狀部之局部放大圖，第24(c)圖為以符號A4表示之區域中的環狀部之局部放大圖，第24(d)圖為以符號A5表示之區域中的環狀部之局部放大圖。(24) (a) (a) (b) (c) of the first embodiment of the present invention, and a part of the heating unit 30 according to a modification of the first embodiment of the present invention, the 24th (b) is a partial enlarged view of the annular portion in the region indicated by the symbol A3, and FIG. 24(c) is a partially enlarged view of the annular portion in the region indicated by the symbol A4, and FIG. 24(d) It is a partial enlarged view of the annular portion in the region indicated by the symbol A5.
如第24(b)圖所示，在以符號A3表示之區域(一對供電部45,46附近)中，沿環狀部42R之周方向的移動量可為最小，所以，於保持體承受部42c之中心配置保持體41的端部。在該情況下，以符號A3表示之區域中的沿環狀部42R之周方向的移動量，成為保持體承受部42c之寬度(第2寬度(b))的一半左右。As shown in Fig. 24(b), in the region indicated by the symbol A3 (near the pair of power supply portions 45, 46), the amount of movement in the circumferential direction of the annular portion 42R can be minimized, so that the retaining body is subjected to The end of the holding body 41 is disposed at the center of the portion 42c. In this case, the amount of movement in the circumferential direction of the annular portion 42R in the region indicated by the symbol A3 is about half of the width (second width (b)) of the holder receiving portion 42c.
另外，如第24(c)圖所示，在以符號A4表示之區域(遠離一對供電部45,46附近的部位)中，需要有沿環狀部42R之周方向的移動量，所以，不是於保持體承受部42c之中心配置保持體41的端部，而是於沿位置偏移方向偏移的位置上配置保持體41的端部。藉由使保持體41的端部偏移至保持體承受部42c的邊緣部，可將沿環狀部42R之周方向的移動量最大確保為第2寬度(b)。Further, as shown in Fig. 24(c), in the region indicated by the symbol A4 (the portion away from the pair of power supply portions 45, 46), the amount of movement along the circumferential direction of the annular portion 42R is required. The end portion of the holding body 41 is disposed at a position offset from the positional deviation direction instead of the end portion of the holding body 41 disposed at the center of the holding body receiving portion 42c. By shifting the end portion of the holding body 41 to the edge portion of the holder receiving portion 42c, the amount of movement in the circumferential direction of the annular portion 42R can be maximized to the second width (b).
如第24(d)圖所示，在以符號A5表示之區域中，沿環狀部42R之周方向的移動量可為最小，所以，於保持體承受部42c之中心配置保持體41的端部。如上述，這是因為在以符號A5表示之區域(最遠離一對供電部45,46的部位)中，於周方向幾乎沒有位置偏移，而僅於半徑方向產生較大之位置偏移的緣故。在該情況下，與第24(b)圖之情況相同，以符號A5表示之區域中沿環狀部42R之周方向的移動量，成為保持體承受部42c之寬度(第2寬度(b))的一半程度。As shown in Fig. 24(d), in the region indicated by the symbol A5, the amount of movement in the circumferential direction of the annular portion 42R can be minimized, so that the end of the holding body 41 is disposed at the center of the holder receiving portion 42c. unit. As described above, this is because in the region indicated by the symbol A5 (the portion farthest from the pair of power supply portions 45, 46), there is almost no positional shift in the circumferential direction, and only a large positional shift occurs in the radial direction. reason. In this case, as in the case of Fig. 24(b), the amount of movement in the circumferential direction of the annular portion 42R in the region indicated by the symbol A5 is the width of the holder receiving portion 42c (the second width (b) Half of the degree.
根據本變化例，可在環狀部42R之各部分分別確保必須之移動量，來抑制環狀部42R與保持體41之干涉(接觸)，減低施加於環狀部42R的塑性應力。另外，可在環狀部42R之各部分分別減少多餘之移動量，可提高環狀部42R之保持穩定性。又，只要於涵蓋環狀部42R之全周將各保持體承受部42c之大小設為一定即可，所以，可減低環狀部42R之製造成本。According to the present modification, the amount of movement necessary for each portion of the annular portion 42R can be ensured, and the interference (contact) between the annular portion 42R and the holding body 41 can be suppressed, and the plastic stress applied to the annular portion 42R can be reduced. Further, the amount of excess movement can be reduced in each portion of the annular portion 42R, and the stability of the annular portion 42R can be improved. Moreover, the size of each of the holder receiving portions 42c can be made constant over the entire circumference of the annular portion 42R. Therefore, the manufacturing cost of the annular portion 42R can be reduced.
〈第2實施形態〉<Second embodiment>
以下，參照圖面說明本發明之第2實施形態。Hereinafter, a second embodiment of the present invention will be described with reference to the drawings.
第25圖為本發明之第2實施形態的基板處理裝置之垂直剖視圖。第26圖為本發明之第2實施形態的發熱體之立體圖。第27(a)圖為本發明之第2實施形態的環狀部之局部放大圖，第27(b)圖為放大部分之側視圖。第28圖為保持本發明之第2實施形態的環狀部之隔熱體之局部放大圖，第28(a)圖顯示昇溫前之狀態，第28(b)圖顯示昇溫後之狀態。Figure 25 is a vertical sectional view showing a substrate processing apparatus according to a second embodiment of the present invention. Figure 26 is a perspective view of a heat generating body according to a second embodiment of the present invention. Fig. 27(a) is a partially enlarged view of the annular portion according to the second embodiment of the present invention, and Fig. 27(b) is a side view showing an enlarged portion. Fig. 28 is a partially enlarged view showing the heat insulator of the annular portion according to the second embodiment of the present invention, wherein Fig. 28(a) shows the state before the temperature rise, and Fig. 28(b) shows the state after the temperature rise.
(1)發熱體及隔熱體的構成(1) Composition of heating element and insulator
本實施形態之基板處理裝置在發熱體42及隔熱體33的構成上與上述實施形態不同。其他之構成與上述實施形態相同。The substrate processing apparatus according to the present embodiment differs from the above-described embodiment in the configuration of the heat generating body 42 and the heat insulator 33. Other configurations are the same as those of the above embodiment.
本實施形態之發熱體42係與上述實施形態相同，具有：環狀部42R，係形成於複數個山峰部42a及山谷部42b交互地連接之部位；及一對供電部45,46，係貫穿隔熱體33而固定於隔熱體33上，且分別連接於環狀部42R的兩端。如第26及第27圖所示，本實施形態之環狀部42R與上述實施形態之差異點在於，環狀部42R中的山峰部42a的前端42d，係以朝向環狀部42R之中心的方式相對於環狀部42R中除了山峰部42a前端之中央部42e分別呈鈍角傾斜。The heating element 42 of the present embodiment has an annular portion 42R formed in a portion where a plurality of mountain portions 42a and valley portions 42b are alternately connected, and a pair of power supply portions 45 and 46 are connected as in the above-described embodiment. The heat insulator 33 is fixed to the heat insulator 33 and connected to both ends of the annular portion 42R. As shown in Figs. 26 and 27, the annular portion 42R of the present embodiment differs from the above-described embodiment in that the distal end 42d of the mountain portion 42a in the annular portion 42R faces the center of the annular portion 42R. The method is inclined at an obtuse angle with respect to the central portion 42e of the end portion of the annular portion 42R except for the tip end of the mountain portion 42a.
本實施形態之隔熱體33係與上述實施形態相同，以圍繞於環狀部42R之外周面的方式形成為筒狀。如第5及第28圖所示，本實施形態之隔熱體33與上述實施形態之差異在於，於隔熱體33之內周面設置用來收容環狀部42R的溝狀收容部40之點。溝狀收容部40係以分別與各環狀部42R對應之方式沿垂直方向設置複數個。The heat insulator 33 of the present embodiment is formed into a tubular shape so as to surround the outer peripheral surface of the annular portion 42R, similarly to the above-described embodiment. As shown in Figs. 5 and 28, the heat insulator 33 of the present embodiment differs from the above-described embodiment in that a groove-shaped accommodating portion 40 for accommodating the annular portion 42R is provided on the inner circumferential surface of the heat insulator 33. point. The groove-shaped accommodating portion 40 is provided in plural in the vertical direction so as to correspond to each of the annular portions 42R.
收容部40之底面40e的內徑(水平方向之直徑)，係構成為比環狀部42R之外形(水平方向之直徑)大。收容部40之開口部的上下方向之寬度，係構成為比包含山峰部42a在內之環狀部42R的上下方向之寬度大。收容部40之底面40e的上下方向之寬度，係構成為比環狀部42R中除了山峰部42a前端之中央部42e的上下方向之寬度小。收容部40之兩側壁(上下一對之側壁)40d，係相對於溝狀收容部40之底面40e分別呈鈍角傾斜。亦即，收容部40之上下方向之寬度，係形成為隨著朝圓筒形狀之隔熱體33的外徑方向(與圓筒之中心相反的方向)行進(隨著接近於底面40e)而逐漸變窄。換言之，收容部40之兩側壁40d係形成為錐面，兩側壁40d間之距離，係隨著越接近底面40e而逐漸變小。The inner diameter (diameter in the horizontal direction) of the bottom surface 40e of the accommodating portion 40 is configured to be larger than the outer shape (diameter in the horizontal direction) of the annular portion 42R. The width of the opening of the accommodating portion 40 in the vertical direction is configured to be larger than the width of the annular portion 42R including the mountain portion 42a in the vertical direction. The width of the bottom surface 40e of the accommodating portion 40 in the vertical direction is smaller than the width of the annular portion 42R in the vertical direction of the central portion 42e of the tip end of the mountain portion 42a. The two side walls (the pair of upper and lower side walls) 40d of the accommodating portion 40 are inclined at an obtuse angle with respect to the bottom surface 40e of the groove-shaped accommodating portion 40, respectively. That is, the width of the accommodating portion 40 in the vertical direction is formed so as to follow the outer diameter direction of the cylindrical heat insulator 33 (the direction opposite to the center of the cylinder) (as it approaches the bottom surface 40e). Gradually narrowed. In other words, the side walls 40d of the accommodating portion 40 are formed into a tapered surface, and the distance between the side walls 40d gradually decreases as it approaches the bottom surface 40e.
隔熱體33之側壁部35，係藉由沿垂直方向層積複數個例如甜甜圈形狀之隔熱塊36而構成。隔熱塊36係由例如纖維狀或球狀之氧化鋁(Al2 O3 )或氧化矽(SiO2 )等的隔熱材料形成。隔熱塊36係藉由例如真空成型法等而一體成型。如此，藉由複數個隔熱塊36來構成隔熱體33之側壁部35，可容易地形成溝狀收容部40、或可容易地組裝加熱單元30，並且可抑制應力施加於側壁部35時之側壁部35(隔熱塊36)的破損。另外，亦可容易部分地取出多層層積之隔熱塊36或發熱體42的一部分，來進行更換或維護。但側壁部35不限定於此種構成，還可一體成型。另外，隔熱塊36不限於一體成型之情況，還可藉由複數個甜甜圈形狀之隔熱材來構成。The side wall portion 35 of the heat insulator 33 is formed by laminating a plurality of heat insulating blocks 36 of, for example, a donut shape in the vertical direction. The heat insulating block 36 is formed of, for example, a heat insulating material such as fibrous or spherical alumina (Al 2 O 3 ) or cerium oxide (SiO 2 ). The heat insulating block 36 is integrally molded by, for example, a vacuum forming method. By forming the side wall portion 35 of the heat insulator 33 by the plurality of heat insulating blocks 36, the groove-shaped housing portion 40 can be easily formed, or the heating unit 30 can be easily assembled, and stress can be suppressed from being applied to the side wall portion 35. The side wall portion 35 (insulation block 36) is broken. Further, it is also possible to easily take out a part of the heat insulating block 36 or a part of the heat generating body 42 which is laminated in a plurality of layers for replacement or maintenance. However, the side wall portion 35 is not limited to such a configuration, and may be integrally formed. Further, the heat insulating block 36 is not limited to the case of integral molding, and may be constituted by a plurality of doughnut-shaped heat insulating materials.
環狀部42R中之山峰部42a的前端42d之傾斜角度與收容部40之兩側壁40d的傾斜角度，係設定為相同角度。亦即，山峰部42a的前端42d與收容部40之兩側壁40d係構成為大致平行。另外，如第28(a)圖所示，在環狀部42R處於昇溫前之狀態(至少為室溫狀態)，山峰部42a的前端42d與收容部40之兩側壁40d係構成為保持既定之間隔d而不接觸。另外，如第28(b)圖所示，在環狀部42R昇溫而朝半徑方向延伸時，山峰部42a的前端42d與收容部40之兩側壁40d，構成為分別進行面接觸。此時，環狀部42R中除了山峰部42a前端之外的中央部42e與收容部40之底面40e，係構成為保持既定之間隔d2而不接觸。The inclination angle of the front end 42d of the mountain portion 42a in the annular portion 42R and the inclination angle of the both side walls 40d of the accommodating portion 40 are set at the same angle. That is, the front end 42d of the mountain portion 42a and the side walls 40d of the accommodating portion 40 are formed substantially in parallel. Further, as shown in Fig. 28(a), in a state before the temperature rise of the annular portion 42R (at least at room temperature), the front end 42d of the mountain portion 42a and the side walls 40d of the accommodating portion 40 are configured to be maintained. Interval d without contact. Further, as shown in Fig. 28(b), when the annular portion 42R is heated and extends in the radial direction, the front end 42d of the mountain portion 42a and the side walls 40d of the accommodating portion 40 are configured to be in surface contact. At this time, the central portion 42e of the annular portion 42R except for the tip end of the mountain portion 42a and the bottom surface 40e of the accommodating portion 40 are configured to be held at a predetermined interval d2 without being in contact.
(2)本實施形態之效果(2) Effect of the embodiment
根據本實施形態，可獲得以下所示效果中之一個或複數個效果。According to this embodiment, one or a plurality of effects of the following effects can be obtained.
(a)根據本實施形態，環狀部42R中之山峰部42a的前端42d之傾斜角度與收容部40之兩側壁40d的傾斜角度，係設定為相同角度。亦即，山峰部42a的前端42d與收容部40之兩側壁40d係構成為大致平行。另外，在環狀部42R昇溫而朝半徑方向延伸時，山峰部42a的前端42d與收容部40之兩側壁40d，係構成為分別進行面接觸。其結果，變得不容易對環狀部42R施加壓縮應力，可抑制環狀部42R的變形。(a) According to the present embodiment, the inclination angle of the front end 42d of the mountain portion 42a of the annular portion 42R and the inclination angle of the both side walls 40d of the accommodating portion 40 are set at the same angle. That is, the front end 42d of the mountain portion 42a and the side walls 40d of the accommodating portion 40 are formed substantially in parallel. Further, when the annular portion 42R is heated and extends in the radial direction, the front end 42d of the mountain portion 42a and the side walls 40d of the accommodating portion 40 are configured to be in surface contact. As a result, it is not easy to apply a compressive stress to the annular portion 42R, and deformation of the annular portion 42R can be suppressed.
(b)根據本實施形態，在環狀部42R昇溫而朝半徑方向延伸時，環狀部42R中除了山峰部42a前端以外，中央部42e與收容部40之底面40e係構成為保持既定之間隔d2而不接觸。藉此，可避免環狀部42R與隔熱體33接觸所引起之環狀部42R的局部溫度上昇(異常溫度上昇)或環狀部42R的熔斷，可延長環狀部42R或隔熱體33之壽命。另外，可使處理室14內之溫度分布達成均勻化。(b) According to the present embodiment, when the annular portion 42R is heated and extends in the radial direction, the central portion 42e and the bottom surface 40e of the accommodating portion 40 are configured to maintain a predetermined interval except for the tip end of the mountain portion 42a. D2 does not touch. Thereby, the local temperature rise (abnormal temperature rise) of the annular portion 42R caused by the contact of the annular portion 42R with the heat insulator 33 (the abnormal temperature rise) or the melting of the annular portion 42R can be avoided, and the annular portion 42R or the heat insulator 33 can be extended. Life expectancy. In addition, the temperature distribution in the processing chamber 14 can be made uniform.
(3)變化例(3) Variations
在上述實施形態中，收容部40之底面40e的上下方向之寬度，係構成為小於環狀部42R中除了山峰部42a前端以外之中央部42e的上下方向之寬度，但本發明不限定於該形態。例如，亦可將收容部40之底面40e的上下方向之寬度形成為大於環狀部42R中除了山峰部42a前端以外之中央部42e的上下方向之寬度，且於收容部40之底面40e設置以比中央部42e的上下方向之寬度還小的寬度形成之階差部。In the above-described embodiment, the width of the bottom surface 40e of the accommodating portion 40 in the vertical direction is smaller than the width of the central portion 42e of the annular portion 42R except for the tip end of the mountain portion 42a. However, the present invention is not limited to this. form. For example, the width of the bottom surface 40e of the accommodating portion 40 in the vertical direction may be larger than the width of the central portion 42e of the annular portion 42R except for the front end of the mountain portion 42a, and may be provided on the bottom surface 40e of the accommodating portion 40. A step portion formed by a width smaller than the width of the central portion 42e in the vertical direction.
第29圖為顯示本發明之第2實施形態的收容部之變化例之示意圖，第29(a)圖為收容環狀部之收容部的局部放大圖，第29(b)圖為放大部分之側視圖。由第29圖可知，收容部40之底面40e的上下方向之寬度E2，係設定為大於環狀部42R中除了山峰部42a前端以外之中央部42e的上下方向之寬度E1。另外，於收容部40之底面40e設置以比中央部42e的寬度E1還小的寬度形成之階差部40f。Fig. 29 is a schematic view showing a modification of the accommodating portion according to the second embodiment of the present invention, wherein Fig. 29(a) is a partially enlarged view of the accommodating portion accommodating the annular portion, and Fig. 29(b) is an enlarged portion. Side view. As can be seen from Fig. 29, the width E2 of the bottom surface 40e of the accommodating portion 40 in the vertical direction is set to be larger than the width E1 of the vertical portion 42R in the vertical direction of the central portion 42e except the tip end of the mountain portion 42a. Further, a step portion 40f formed at a width smaller than the width E1 of the center portion 42e is provided on the bottom surface 40e of the accommodating portion 40.
根據本變化例，即使環狀部42R昇溫而朝半徑方向延伸，使得環狀部42R中除了山峰部42a前端以外之中央部42e與收容部40之底面40e的距離d2成為零，中央部42e僅與階差部40f接觸，而可減小中央部42e與底面40e之接觸面積。其結果，可避免中央部42e的局部溫度上昇(異常溫度上昇)或熔解。尤其是，只要將階差部40f設置成與中央部42e中之電流密度低的區域接觸，可更有效地避免中央部42e的局部溫度上昇(異常溫度上昇)。According to the present modification, even if the annular portion 42R is heated and extends in the radial direction, the distance d2 between the central portion 42e of the annular portion 42R except the tip end of the mountain portion 42a and the bottom surface 40e of the accommodating portion 40 becomes zero, and the central portion 42e is only Contact with the step portion 40f reduces the contact area between the center portion 42e and the bottom surface 40e. As a result, the local temperature rise (abnormal temperature rise) or melting of the central portion 42e can be avoided. In particular, if the step portion 40f is placed in contact with the region having a low current density in the central portion 42e, the local temperature rise (abnormal temperature rise) of the central portion 42e can be more effectively avoided.
〈第3實施形態〉<Third embodiment>
以下，參照圖面說明本發明之第3實施形態。Hereinafter, a third embodiment of the present invention will be described with reference to the drawings.
第6圖為本發明之第3實施形態在昇溫前之加熱單元30的水平剖視圖。第7圖為本發明之第3實施形態在昇溫後之加熱單元30的水平剖視圖。Figure 6 is a horizontal cross-sectional view of the heating unit 30 before temperature rise in the third embodiment of the present invention. Fig. 7 is a horizontal sectional view showing the heating unit 30 after the temperature rise in the third embodiment of the present invention.
在本實施形態之基板處理裝置中，如第6圖所示，底面40e與中央部42e之間的距離，係設定為至少在環狀部42R處於室溫狀態時，隨著遠離一對供電部45,46而變大(亦即，於室溫狀態時，以成為圖中A<B<C的方式設定)。另外，如第7圖所示，底面40e與中央部42e之間的距離，係設定為至少在環狀部42R處於基板處理時之溫度狀態時，收容部40及環狀部42R中的全周各部分因熱膨脹而成為相同的距離(亦即，於基板處理時之溫度狀態時，以成為圖中A≒B≒C的方式設定)。In the substrate processing apparatus of the present embodiment, as shown in Fig. 6, the distance between the bottom surface 40e and the central portion 42e is set to be at least a distance from the pair of power supply portions when the annular portion 42R is at room temperature. 45, 46 becomes larger (that is, when it is in the room temperature state, it is set so that A<B<C in the figure). Further, as shown in Fig. 7, the distance between the bottom surface 40e and the center portion 42e is set to be at least the entire circumference of the accommodating portion 40 and the annular portion 42R when the annular portion 42R is in the temperature state at the time of substrate processing. Each part has the same distance due to thermal expansion (that is, when it is in the temperature state at the time of substrate processing, it is set so as to become A ≒ B ≒ C in the figure).
發熱體42之環狀部42R，因溫度上昇而熱膨脹或朝半徑方向及周方向延伸。因環狀部42R朝半徑方向延伸，使得底面40e與中央部42e之間的距離涵蓋環狀部42R之全周成為不均勻時，會有環狀部42R之溫度分布之均勻性涵蓋周方向降低的情況。亦即，會有在底面40e與中央部42e接近之部位，環狀部42R之溫度異常上昇，或者在底面40e與中央部42e接近之部位，環狀部42R之溫度降低的情況。相對於此，根據本實施形態，在環狀部42R處於基板處理時之溫度狀態時，收容部40及環狀部42R中的全周各部分因熱膨脹而成為相同的距離，所以，可涵蓋環狀部42R之周方向實現均勻之加熱。The annular portion 42R of the heating element 42 thermally expands due to an increase in temperature or extends in the radial direction and the circumferential direction. When the annular portion 42R extends in the radial direction such that the distance between the bottom surface 40e and the central portion 42e covers the entire circumference of the annular portion 42R, the uniformity of the temperature distribution of the annular portion 42R covers the circumferential direction. Case. In other words, the temperature of the annular portion 42R may rise abnormally at a portion where the bottom surface 40e is close to the central portion 42e, or the temperature of the annular portion 42R may decrease when the bottom surface 40e approaches the central portion 42e. On the other hand, according to the present embodiment, when the annular portion 42R is in the temperature state at the time of substrate processing, the entire circumference of each of the accommodating portion 40 and the annular portion 42R has the same distance due to thermal expansion, so that the ring can be covered. The circumferential direction of the portion 42R achieves uniform heating.
參照第16圖來說明環狀部42R之熱變形的狀態，作為參考。The state of thermal deformation of the annular portion 42R will be described with reference to Fig. 16, for reference.
第16圖為顯示在室溫狀態下收容部40與環狀部42R成為同心圓狀時的環狀部42R之熱變形的狀態之示意圖，第16(a)圖顯示昇溫前之狀態，第16(b)圖顯示昇溫後之狀態。根據第16(a)圖，於昇溫前，底面40e與中央部42e之間的距離，係涵蓋環狀部42R之全周成為均一。然而，如第16(b)圖所示，當將環狀部42R昇溫至基板處理時之溫度時，環狀部42R朝徑向延伸，收容部40之底面40e與鄰接於底面40e的環狀部42R中除了山峰部42a前端以外之中央部42e之間的距離，涵蓋環狀部42R之全周成為不均一(圖中成為A>B>C)。亦即，因為一對供電部45,46被固定於隔熱體33上，所以，環狀部42R之各部分，係以一對供電部45,46附近之區域(以符號A11表示之區域)為基點而膨脹。另外，底面40e與中央部42e之間的距離隨著離開一對供電部45,46而逐漸變短，而於離一對供電部45,46最遠的區域(以符號A12表示之區域)，底面40e與中央部42e之間的距離成為最小(本實施例中為零)。其結果，會產生環狀部42R之局部溫度上昇(異常溫度上昇)，造成環狀部42R被熔斷。另外，環狀部42R之溫度分布的均勻性，係涵蓋周方向降低。Fig. 16 is a view showing a state in which the annular portion 42R is thermally deformed when the accommodating portion 40 and the annular portion 42R are concentric in a room temperature state, and Fig. 16(a) shows the state before the temperature rise, the 16th. (b) The figure shows the state after the temperature rise. According to the 16th (a) diagram, the distance between the bottom surface 40e and the center portion 42e before the temperature rise is such that the entire circumference of the annular portion 42R is uniform. However, as shown in Fig. 16(b), when the temperature of the annular portion 42R is raised to the temperature at the time of substrate processing, the annular portion 42R extends in the radial direction, and the bottom surface 40e of the accommodating portion 40 and the annular shape adjacent to the bottom surface 40e. The distance between the central portion 42e of the portion 42R other than the tip end of the peak portion 42a covers that the entire circumference of the annular portion 42R is uneven (in the figure, A>B>C). In other words, since the pair of power supply portions 45, 46 are fixed to the heat insulator 33, the respective portions of the annular portion 42R are adjacent to the pair of power supply portions 45, 46 (the region indicated by the symbol A11). Expanded for the base point. Further, the distance between the bottom surface 40e and the central portion 42e is gradually shortened as it leaves the pair of power supply portions 45, 46, and is the region farthest from the pair of power supply portions 45, 46 (the region indicated by the symbol A12). The distance between the bottom surface 40e and the central portion 42e is the smallest (zero in this embodiment). As a result, a local temperature rise (abnormal temperature rise) of the annular portion 42R occurs, and the annular portion 42R is blown. Further, the uniformity of the temperature distribution of the annular portion 42R covers the circumferential direction.
〈本發明之其他實施形態〉<Other Embodiments of the Present Invention>
本發明之第3實施形態，不限定於像上述實施形態那樣在山谷部42b的末端設置形成作為缺口部之保持體承受部42c的情況。亦即，如第20圖所例示，只要是具備以下構成之發熱體的加熱裝置，即使在不設置保持體承受部42c的情況，本發明仍可適合地應用，其中該發熱體具備：環狀部42R'，係由複數個山峰部42a'及山谷部42b'交互地連接之部位形成；及一對供電部45,46，係貫穿隔熱體33而固定於隔熱體33上，且分別連接於環狀部42R'的兩端。另外，即使為具備如下構成之環狀部及一對供電部之加熱裝置，本發明仍可適合地應用，其中該環狀部係複數個山峰部42a'及山谷部42b'沒有交互地連接之形態的環狀部，例如為線圈形狀之環狀部，而該一對供電部係貫穿隔熱體而固定於隔熱體上，且分別連接於環狀部的兩端。The third embodiment of the present invention is not limited to the case where the holder receiving portion 42c as the notch portion is formed at the end of the valley portion 42b as in the above-described embodiment. In other words, as long as it is a heating device having a heating element having the following configuration, the present invention can be suitably applied even in the case where the holder receiving portion 42c is not provided, wherein the heating element is provided with a ring shape. The portion 42R' is formed by a portion where the plurality of peak portions 42a' and the valley portion 42b' are alternately connected; and the pair of power supply portions 45, 46 are fixed to the heat insulator 33 through the heat insulator 33, and respectively Connected to both ends of the annular portion 42R'. Further, the present invention can be suitably applied even in a heating device having an annular portion having a configuration in which a plurality of mountain portions 42a' and a valley portion 42b' are not alternately connected. The annular portion of the form is, for example, a coil-shaped annular portion, and the pair of power supply portions are fixed to the heat insulator through the heat insulator, and are respectively connected to both ends of the annular portion.
〈第4實施形態〉<Fourth embodiment>
以下，參照圖面說明本發明之第4實施形態之加熱單元的構成。Hereinafter, the configuration of the heating unit according to the fourth embodiment of the present invention will be described with reference to the drawings.
(2)加熱單元的構成(2) Composition of the heating unit
在外管12之外部以圍繞於外管12周圍的方式設有作為加熱處理管11內部的加熱裝置之加熱單元30。加熱單元30具備：發熱體42，係形成為環狀；隔熱體33，係以圍繞於發熱體42之外周的方式設置；作為固定部之一對供電部45,46，係分別連接於發熱體42之兩端；及外殼31，係圍繞於隔熱體33之外側。A heating unit 30 as a heating means inside the heat treatment tube 11 is provided outside the outer tube 12 so as to surround the periphery of the outer tube 12. The heating unit 30 includes a heating element 42 that is formed in a ring shape, and a heat insulator 33 that is disposed around the outer circumference of the heating element 42. The power supply units 45 and 46 are connected to the heating unit as one of the fixing portions. The two ends of the body 42 and the outer casing 31 surround the outer side of the heat insulator 33.
發熱體42係以圍繞於外管12周圍之方式沿垂直方向設置至少一個以上。如第2、第3圖所示，發熱體42係以圍繞於外管12外周之方式構成為環狀。發熱體42之兩端部係相互靠近地固定而沒有接觸，藉以成為非電性接觸之狀態。亦即，發熱體42係構成為不是完全電性狀態的圓形，而是形成為例如C字狀的環形。作為構成發熱體42之材料而言，可使用例如Fe-Cr-Al合金、MOSi2 、SiC等之電阻發熱材料，其形狀可為第4(a)圖所示之線狀材料，亦可為第4(b)圖所示之板狀材料。又，如第2、第3、第5圖所例示，於發熱體42之上下端分別交互地連接有複數個山峰部(突出部)42a及山谷部(缺口部)42b。亦即，發熱體42係形成為蛇行狀(波狀)。The heating element 42 is disposed at least one or more in a vertical direction so as to surround the periphery of the outer tube 12. As shown in FIGS. 2 and 3, the heating element 42 is formed in a ring shape so as to surround the outer circumference of the outer tube 12. Both end portions of the heating element 42 are fixed to each other without contact, thereby making them in a state of non-electrical contact. In other words, the heating element 42 is formed in a circular shape that is not in a fully electrical state but is formed in, for example, a C-shaped ring shape. As the material constituting the heating element 42, a resistance heating material such as Fe-Cr-Al alloy, MOSi 2 or SiC can be used, and the shape thereof can be a linear material as shown in Fig. 4(a), or The plate material shown in Fig. 4(b). Further, as exemplified in the second, third, and fifth figures, a plurality of mountain portions (protrusions) 42a and valley portions (notch portions) 42b are alternately connected to the lower end of the heating element 42 respectively. That is, the heating element 42 is formed in a meandering shape (wave shape).
一對供電部45,46之端部係分別連接於上述發熱體42的兩端部。一對供電部45,46係貫穿後述之隔熱體33(側壁部35)而固定於隔熱體33上。亦即，一對供電部45,46係用作為將發熱體42固定於隔熱體33之內壁的固定部。第5(a)圖顯示從發熱體42之中心側觀察(從處理管11側觀察)之供電部45,46周邊的局部放大圖(俯視圖)。如此，藉由作為固定部之一對供電部45,46，發熱體42可僅固定於一處(發熱體42之端部)。亦即，在一對供電部45,46以外，不進行使用銷等之保持體的固定。The end portions of the pair of power supply portions 45, 46 are respectively connected to both end portions of the heat generating body 42. The pair of power supply portions 45 and 46 are fixed to the heat insulator 33 through a heat insulator 33 (side wall portion 35) to be described later. In other words, the pair of power supply portions 45 and 46 are used as fixing portions for fixing the heat generating body 42 to the inner wall of the heat insulator 33. Fig. 5(a) is a partial enlarged view (plan view) of the vicinity of the power supply portions 45, 46 as viewed from the center side of the heating element 42 (as viewed from the side of the processing tube 11). As described above, the heat generating body 42 can be fixed only at one place (the end portion of the heat generating body 42) by the power supply portions 45, 46 as one of the fixing portions. In other words, the holding body using the pin or the like is not fixed except for the pair of power supply portions 45 and 46.
一對供電部45,46係由金屬等之導電性材料構成。透過一對供電部45,46而從發熱體42的一端朝另一端流動電流，藉此，可構成為加熱發熱體42而使得處理管11內昇溫。透過一對供電部45,46而對發熱體42進行的供電，係由控制器280控制。The pair of power supply portions 45, 46 are made of a conductive material such as metal. The electric current flows from one end of the heating element 42 to the other end through the pair of feeding portions 45, 46, whereby the heating element 42 can be heated to raise the temperature in the processing tube 11. The power supply to the heating element 42 through the pair of power supply units 45, 46 is controlled by the controller 280.
隔熱體33係以圍繞於發熱體42外周之方式設置。隔熱體33具備：上下端開口之圓筒狀側壁部35；及覆蓋側壁部35之上部開口的頂壁部34；隔熱體33係形成為下端開口之圓筒狀。隔熱體33係相對於外管12而形成為同心圓狀。側壁部35及頂壁部34，係由例如纖維狀或球狀之氧化鋁(Al2 O3 )或氧化矽(SiO2 )等的隔熱材料形成。側壁部35及頂壁部34係分別藉由例如真空成型法等而一體成型。又，側壁部35不限定於一體成型之情況，還可藉由多層地堆疊複數個圓形之隔熱材而構成。藉由此種構成，可抑制應力被施加於側壁部35上時之側壁部35的破損，或者可提高維護性。The heat insulator 33 is provided to surround the outer circumference of the heat generating body 42. The heat insulator 33 includes a cylindrical side wall portion 35 that is open at the upper and lower ends, and a top wall portion 34 that covers the upper portion of the side wall portion 35. The heat insulator 33 is formed in a cylindrical shape having a lower end opening. The heat insulator 33 is formed concentrically with respect to the outer tube 12. The side wall portion 35 and the top wall portion 34 are formed of, for example, a heat insulating material such as fibrous or spherical alumina (Al 2 O 3 ) or yttrium oxide (SiO 2 ). The side wall portion 35 and the top wall portion 34 are integrally molded by, for example, a vacuum forming method or the like. Further, the side wall portion 35 is not limited to the case of integral molding, and may be configured by stacking a plurality of circular heat insulating materials in a plurality of layers. According to this configuration, it is possible to suppress breakage of the side wall portion 35 when stress is applied to the side wall portion 35, or to improve maintainability.
外殼31係以圍繞於隔熱體33外周之方式設置。外殼31係形成為例如上端閉塞且下端開口之圓筒形狀。外殼31係由例如不鏽鋼(SUS)形成。隔熱體33之外周面與外殼31的內周面之間的間隙32，係可用作為進行空氣冷卻的空間。又，還可設置貫穿頂壁部34及外殼31的頂壁之排氣口，而以強制性地對隔熱體33與外管12之間的環境氣體進行空氣冷卻之方式構成。The outer casing 31 is provided to surround the outer periphery of the heat insulator 33. The outer casing 31 is formed in, for example, a cylindrical shape in which the upper end is closed and the lower end is open. The outer casing 31 is formed of, for example, stainless steel (SUS). A gap 32 between the outer circumferential surface of the heat insulator 33 and the inner circumferential surface of the outer casing 31 can be used as a space for air cooling. Further, an exhaust port penetrating the top wall portion 34 and the top wall of the outer casing 31 may be provided, and the ambient gas between the heat insulator 33 and the outer tube 12 may be forcibly cooled by air.
發熱體42具有當加熱時因熱膨脹而朝圓周方向或半徑方向伸展的特性。其結果，會有發熱體42與隔熱體33之內壁接觸、干涉的情況。尤其是，像本實施形態那樣當發熱體42形成為蛇行狀時，其延伸量增大而容易產生接觸。當發熱體42與隔熱體33之內壁接觸、干涉時，會產生發熱體42之局部溫度上昇(異常溫度上昇)，而導致發熱體42熔斷。另外，恐有應力被施加於發熱體42、隔熱體33上而造成此等構件之損傷的情況。另外，當因發熱體42朝半徑方向伸展而使得發熱體42與隔熱體33之內壁之間的距離涵蓋發熱體42之圓周方向都成為不均勻時，發熱體42之溫度分布均一性會涵蓋圓周方向下降，而會產生基板處理之品質降低的情況。亦即，會有在發熱體42與隔熱體33之內壁的距離較近的部位，發熱體42之溫度異常上昇，或者，在發熱體42與隔熱體33之內壁的距離較遠的部位，發熱體42之溫度降低的情況。The heating element 42 has a characteristic of extending in the circumferential direction or the radial direction due to thermal expansion when heated. As a result, the heating element 42 may come into contact with and interfere with the inner wall of the heat insulator 33. In particular, when the heating element 42 is formed into a meandering shape as in the present embodiment, the amount of extension is increased and contact is likely to occur. When the heating element 42 comes into contact with and interferes with the inner wall of the heat insulator 33, a local temperature rise (abnormal temperature rise) of the heating element 42 occurs, and the heating element 42 is melted. Further, there is a fear that stress is applied to the heat generating body 42 and the heat insulator 33 to cause damage to the members. Further, when the distance between the heat generating body 42 and the inner wall of the heat insulating body 33 is made uneven by the heating element 42 in the radial direction, the temperature distribution uniformity of the heat generating body 42 is uneven. Covering the circumferential direction down, there is a case where the quality of the substrate processing is lowered. In other words, the temperature of the heating element 42 rises abnormally at a portion where the distance between the heating element 42 and the inner wall of the heat insulator 33 is relatively high, or the distance between the heating element 42 and the inner wall of the heat insulating body 33 is long. The temperature of the heating element 42 is lowered.
在此，本實施形態中，至少於發熱體42處於室溫狀態時，發熱體42與隔熱體33之內壁之間的距離，係設定為隨著遠離作為固定部之供電部45,46而變大，藉此可解決上述課題。第6圖為本實施形態之昇溫前(室溫狀態的)加熱單元30的水平剖視圖。如第6圖所示，至少於發熱體42處於室溫狀態時，發熱體42與隔熱體33之內壁之間的距離，係設定為隨著遠離一對供電部45,46而逐漸地變大，圖中，成為A＜B＜C。Here, in the present embodiment, at least when the heating element 42 is at room temperature, the distance between the heating element 42 and the inner wall of the heat insulator 33 is set to be away from the power supply portion 45 as a fixing portion. This will increase the size of the problem. Fig. 6 is a horizontal cross-sectional view of the heating unit 30 before temperature rise (at room temperature) in the present embodiment. As shown in Fig. 6, at least when the heating element 42 is at room temperature, the distance between the heating element 42 and the inner wall of the heat insulator 33 is set to gradually move away from the pair of power supply portions 45, 46. It becomes larger, and in the figure, it becomes A<B<C.
在此狀態下，當使發熱體42昇溫至例如基板處理時之溫度時，發熱體42之各部分因熱膨脹而朝第8圖所示方向伸長。第8圖以箭頭方向及長度來分別顯示發熱體42之各部分的位移方向及位移量。發熱體42係藉由一對供電部45,46而固定於一個部位，所以，發熱體42之各部分係以一對供電部45,46附近之區域(以符號A1表示之區域)為起點，以朝外側膨脹之方式(以遠離一對供電部45,46之方式)進行位移。又，發熱體42之位移係隨著遠離一對供電部45,46而變大。In this state, when the heating element 42 is heated to a temperature at the time of substrate processing, for example, each portion of the heating element 42 is elongated in the direction shown in Fig. 8 due to thermal expansion. Fig. 8 shows the displacement direction and the displacement amount of each portion of the heating element 42 in the direction of the arrow and the length. Since the heating element 42 is fixed to one portion by the pair of feeding portions 45 and 46, each portion of the heating element 42 is a region starting from the vicinity of the pair of feeding portions 45 and 46 (the region indicated by the symbol A1). The displacement is performed in such a manner as to expand outward (in a manner away from the pair of power supply portions 45, 46). Further, the displacement of the heating element 42 becomes larger as it goes away from the pair of power supply portions 45, 46.
其結果，至少於發熱體42處於基板處理時之溫度狀態時，發熱體42與隔熱體33之內壁之間的距離，係涵蓋發熱體42之圓周方向成為相等。第7圖為本實施形態之昇溫後(基板處理時之溫度狀態的)加熱單元30的水平剖視圖。如第7圖所示，至少於發熱體42處於基板處理時之溫度狀態時，發熱體42與隔熱體33之內壁之間的距離，因熱膨脹而涵蓋發熱體42之圓周方向成為相等，圖中，成為A≒B≒C。As a result, at least when the heating element 42 is in the temperature state at the time of substrate processing, the distance between the heating element 42 and the inner wall of the heat insulator 33 is such that the circumferential direction of the heating element 42 is equal. Fig. 7 is a horizontal cross-sectional view of the heating unit 30 after the temperature rise in the embodiment (in the temperature state at the time of substrate processing). As shown in Fig. 7, at least when the heating element 42 is in the temperature state at the time of substrate processing, the distance between the heating element 42 and the inner wall of the heat insulator 33 is equal to the circumferential direction of the heating element 42 due to thermal expansion. In the figure, it becomes A≒B≒C.
(3)基板處理製程(3) substrate processing process
有關基板處理製程，與第1實施例相同。The substrate processing process is the same as in the first embodiment.
(4)本實施形態之效果(4) Effect of this embodiment
根據本實施形態，可獲得以下所示(a)～(c)中之一個或複數個效果。According to this embodiment, one or a plurality of effects (a) to (c) shown below can be obtained.
(a)根據本實施形態，至少於發熱體42處於室溫狀態時，發熱體42與隔熱體33之內壁之間的距離，係隨著遠離作為固定部之供電部45,46而變大。其結果，於發熱體42處於基板處理時之溫度狀態時，發熱體42與隔熱體33之內壁之間的距離，因熱膨脹而涵蓋發熱體42之圓周方向成為相等。藉此，可防止發熱體42與隔熱體33之內壁的不必要的接觸、干涉。另外，可抑制加熱單元30之構成構件的損傷。例如，可防止發熱體42之局部溫度上昇(異常溫度上昇)的發生，可避免發熱體42的熔斷。另外，例如，因發熱體42與隔熱體33之內壁變得沒有接觸，所以，可減低施加於此等構件上之應力。(a) According to the present embodiment, at least when the heat generating body 42 is at room temperature, the distance between the heat generating body 42 and the inner wall of the heat insulator 33 is changed away from the power supply portions 45, 46 as the fixing portions. Big. As a result, when the heating element 42 is in the temperature state at the time of substrate processing, the distance between the heating element 42 and the inner wall of the heat insulator 33 is equal to the circumferential direction of the heating element 42 due to thermal expansion. Thereby, unnecessary contact and interference of the heat generating body 42 and the inner wall of the heat insulator 33 can be prevented. In addition, damage of the constituent members of the heating unit 30 can be suppressed. For example, it is possible to prevent the local temperature rise (abnormal temperature rise) of the heating element 42 from occurring, and to prevent the heat generating body 42 from being blown. Further, for example, since the heat generating body 42 and the inner wall of the heat insulator 33 are not in contact with each other, the stress applied to the member such as this can be reduced.
(b)根據本實施形態，至少於發熱體42處於基板處理時之溫度狀態時，發熱體42與隔熱體33之內壁之間的距離，因熱膨脹而涵蓋發熱體42之圓周方向成為相等。其結果，可涵蓋發熱體42之圓周方向對晶圓1均勻地進行加熱。其結果，可提高基板處理之面內均等性。(b) According to the present embodiment, at least when the heat generating body 42 is in the temperature state at the time of substrate processing, the distance between the heat generating body 42 and the inner wall of the heat insulator 33 is equal to the circumferential direction of the heat generating body 42 due to thermal expansion. . As a result, the wafer 1 can be uniformly heated in the circumferential direction of the heating element 42. As a result, the in-plane uniformity of the substrate treatment can be improved.
(c)根據本實施形態，可將發熱體42藉由作為固定部之一對供電部45,46，僅固定於一處(端部)。亦即，在一對供電部45,46以外，不進行使用銷等之保持體的固定。其結果，可抑制因熱膨脹所引起之發熱體42的損傷或短路。亦即，本實施形態之發熱體42，在與供電部45,46連接之部位以外的部位不受限制，而不會妨礙到熱膨脹，所以，可減低施加於發熱體42、保持構件之應力，其結果，可抑制發熱體42之變形、損傷、短路等。(c) According to the present embodiment, the heating element 42 can be fixed only to one (end) by the power supply portions 45, 46 as one of the fixing portions. In other words, the holding body using the pin or the like is not fixed except for the pair of power supply portions 45 and 46. As a result, damage or short circuit of the heating element 42 due to thermal expansion can be suppressed. In other words, the heat generating element 42 of the present embodiment is not limited to a portion other than the portion to which the power feeding portions 45 and 46 are connected, and the thermal expansion is not hindered. Therefore, the stress applied to the heating element 42 and the holding member can be reduced. As a result, deformation, damage, short circuit, and the like of the heating element 42 can be suppressed.
使用第16圖來說明在室溫狀態下發熱體42'與隔熱體33'之內壁成為同心圓狀時之發熱體42'的熱變形之狀態，作為參考。The state of thermal deformation of the heating element 42' when the heating element 42' and the inner wall of the heat insulator 33' are concentric in the room temperature state will be described with reference to Fig. 16, for reference.
第16(a)圖顯示發熱體42'之昇溫前的狀態，第16(b)圖顯示發熱體42'之昇溫後的狀態。由第16(a)圖可知，於昇溫前，發熱體42'與隔熱體33'之內壁之間的距離，係涵蓋發熱體42'之全周呈均勻。然而，如第16(b)圖所示，當將發熱體42'昇溫至例如基板處理時之溫度時，發熱體42'朝徑向伸長，使得發熱體42'與隔熱體33'之內壁之間的距離，涵蓋發熱體42'之圓周方向成為不均勻(圖中，成為A＞B＞C)。亦即，一對供電部45',46'被固定於隔熱體33'上，所以，發熱體42'之各部分係以一對供電部45',46'附近之區域為基點膨脹。隨著遠離一對供電部45',46'，發熱體42'與隔熱體33'之內壁之間的距離逐漸變短，而於最遠離一對供電部45',46'之區域，會有發熱體42'與隔熱體33'發生接觸的情況。其結果，會發生發熱體42'之局部溫度上昇(異常溫度上昇)，而造成發熱體42'的熔斷。另外，施加於發熱體42'上之應力增加，而有此等構件受到損傷之情況。另外，會有發熱體42'之溫度分布均等性降低的情況。Fig. 16(a) shows the state before the temperature rise of the heating element 42', and Fig. 16(b) shows the state after the temperature rise of the heating element 42'. As can be seen from Fig. 16(a), the distance between the heating element 42' and the inner wall of the heat insulator 33' before the temperature rise is such that the entire circumference of the heating element 42' is uniform. However, as shown in Fig. 16(b), when the heating element 42' is heated to a temperature at the time of, for example, substrate processing, the heating element 42' is elongated in the radial direction so that the heating element 42' and the heat insulator 33' are inside. The distance between the walls, which covers the circumferential direction of the heating element 42', becomes uneven (in the figure, it becomes A>B>C). That is, since the pair of power supply portions 45', 46' are fixed to the heat insulator 33', each portion of the heat generating body 42' is expanded by a region near the pair of power supply portions 45', 46'. As the distance from the pair of power supply portions 45', 46', the distance between the heat generating body 42' and the inner wall of the heat insulator 33' is gradually shortened, and in the region farthest from the pair of power supply portions 45', 46', There is a case where the heating element 42' comes into contact with the heat insulator 33'. As a result, a local temperature rise (abnormal temperature rise) of the heating element 42' occurs, and the heating element 42' is blown. Further, the stress applied to the heating element 42' is increased, and such members are damaged. Further, there is a case where the temperature distribution uniformity of the heating element 42' is lowered.
使用第17圖來說明藉由複數個保持體41'而被固定於各隔熱體之內壁，且因熱膨脹引起之各部分的位移受到限制之發熱體42'的狀態，作為參考。The state of the heat generating body 42' which is fixed to the inner wall of each heat insulator by a plurality of holding bodies 41' and whose displacement due to thermal expansion is restricted will be described with reference to Fig. 17, for reference.
第17(a)圖顯示發熱體42'的昇溫前之狀態。於發熱體42'之上下端分別交互地連接有複數個山峰部42a'及山谷部42b'，發熱體42'係形成為蛇行狀(波狀)。發熱體42'係藉保持體41'而將各山谷部42b'分別固定於隔熱體(未圖示)的內周側壁，而被保持於隔熱體之內周側。又，保持體41'係直接配置於山谷部42b'內。第17(b)圖顯示發熱體42'之昇溫後的狀態。如上述，蛇行狀之發熱體42'因熱膨脹而朝圓周方向伸展。第17(b)圖顯示發熱體42'之圓周方向的延伸量超過一定量，而使得沿發熱體42'之圓周方向的移動量變為零之狀態(保持體41'與發熱體42'干涉的狀態)。當發熱體42'進一步伸展時，成為第17(c)圖所示之狀態。第17(c)圖顯示因熱變形而產生保持體41'之剪斷、發熱體42'之破裂、發熱體42'之短路的狀態。如上述，當圓周方向的延伸量超過一定量時，保持體41'與發熱體42'發生干涉，使得塑性應力被施加於發熱體42'，造成發熱體42'之變形。在符號A6表示之區域，顯示保持體41'被山谷部42b'從兩側挾持而剪斷之狀態，在符號A4表示之區域，顯示發熱體42'產生破裂之狀態，在符號A5表示之區域，顯示發熱體42'產生短路之狀態。第17(d)圖為第17(c)圖所示之發熱體42'的側視圖，顯示因熱變形而產生保持體41'之脫落的狀態。在符號A6表示之區域，顯示因發熱體42'之變形，而將保持體41'從隔熱體抬起而欲脫離之狀態。Fig. 17(a) shows the state before the temperature rise of the heating element 42'. A plurality of mountain portions 42a' and valley portions 42b' are alternately connected to the lower end of the heating element 42', and the heating element 42' is formed in a meandering shape (wave shape). The heating element 42' is fixed to the inner peripheral side wall of the heat insulator (not shown) by the holding body 41', and is held by the inner peripheral side of the heat insulator. Further, the holding body 41' is disposed directly in the valley portion 42b'. Fig. 17(b) shows the state after the temperature rise of the heating element 42'. As described above, the meandering heat generating body 42' extends in the circumferential direction due to thermal expansion. 17(b) shows a state in which the amount of extension of the heating element 42' in the circumferential direction exceeds a certain amount, so that the amount of movement in the circumferential direction of the heating element 42' becomes zero (the holding body 41' interferes with the heating element 42' status). When the heating element 42' is further extended, it becomes a state shown in Fig. 17(c). Fig. 17(c) shows a state in which the holding body 41' is sheared due to thermal deformation, the heating element 42' is broken, and the heating element 42' is short-circuited. As described above, when the amount of extension in the circumferential direction exceeds a certain amount, the holding body 41' interferes with the heat generating body 42', so that plastic stress is applied to the heat generating body 42', causing deformation of the heat generating body 42'. In the region indicated by the symbol A6, the display holder 41' is gripped by the valley portion 42b' from both sides and is cut, and in the region indicated by the symbol A4, the state in which the heating element 42' is broken is shown, and the region indicated by the symbol A5 is displayed. A state in which the heating element 42' is short-circuited is displayed. Fig. 17(d) is a side view of the heat generating body 42' shown in Fig. 17(c), showing a state in which the holding body 41' is detached due to thermal deformation. In the region indicated by the symbol A6, the state in which the holder 41' is lifted from the heat insulator due to the deformation of the heat generating body 42' is displayed.
〈第5實施形態〉<Fifth Embodiment>
以下，參照圖面說明本發明之第5實施形態。Hereinafter, a fifth embodiment of the present invention will be described with reference to the drawings.
於本實施形態中，固定部不只設置一個而是設置多個。亦即，發熱體42係採用作為固定部之一對供電部45,46及作為其他固定部的虛擬端子45d,46d，而被固定於複數個部位(本實施形態中為二個部位)。又，一對供電部45,46及一對虛擬端子45d,46d，係以涵蓋圓周方向將發熱體42大致二等分的方式配置。In the present embodiment, a plurality of fixing portions are provided instead of one. In other words, the heating element 42 is fixed to a plurality of portions (two portions in the present embodiment) by using the power supply portions 45, 46 as the fixing portions, and the dummy terminals 45d and 46d as the other fixing portions. Further, the pair of power supply portions 45, 46 and the pair of dummy terminals 45d, 46d are disposed such that the heat generating body 42 is substantially equally divided in the circumferential direction.
第10(a)圖為本實施形態之作為固定端子的虛擬端子45d,46d周邊之局部放大圖，第10(b)圖為放大部分之側視圖。一對虛擬端子45d,46d係連接於發熱體42之一端部(與供電部45,46之連接部位相反的一側)，並貫穿隔熱體33(側壁部35)而固定於隔熱體33上。亦即，一對虛擬端子45d,46d係與一對供電部45,46相同，具有作為將發熱體42固定於隔熱體33之內壁的固定部之功能。又，虛擬端子45d,46d係與供電部45,46相同，由金屬等之導電性材料所構成。透過一對虛擬端子45d,46d而從發熱體42的一端朝另一端流動電流，藉此，可加熱發熱體42而使得處理管11內昇溫。又，透過一對供電部45,46朝發熱體42之供電係由控制器280控制。又，虛擬端子45d,46d亦可構成為不供電。在此情況下，虛擬端子45d,46d不一定要由導電性材料構成，也可由耐熱性絕緣材料構成。Fig. 10(a) is a partially enlarged view showing the vicinity of the dummy terminals 45d and 46d as fixed terminals of the embodiment, and Fig. 10(b) is a side view showing an enlarged portion. The pair of dummy terminals 45d and 46d are connected to one end of the heating element 42 (the side opposite to the connection portion between the feeding portions 45 and 46), and are fixed to the heat insulator 33 through the heat insulator 33 (side wall portion 35). on. In other words, the pair of dummy terminals 45d and 46d have the same function as the pair of power supply units 45 and 46, and have a function as a fixing portion for fixing the heat generating body 42 to the inner wall of the heat insulator 33. Further, the dummy terminals 45d and 46d are made of a conductive material such as metal, similarly to the power supply units 45 and 46. The electric current flows from one end of the heating element 42 to the other end through the pair of dummy terminals 45d, 46d, whereby the heating element 42 can be heated to raise the temperature inside the processing tube 11. Further, the power supply to the heating element 42 through the pair of power supply units 45, 46 is controlled by the controller 280. Further, the virtual terminals 45d and 46d may be configured not to be powered. In this case, the dummy terminals 45d and 46d do not have to be made of a conductive material, and may be made of a heat-resistant insulating material.
另外，於本實施形態中，至少於發熱體42處於室溫狀態時，發熱體42與隔熱體33之內壁之間的距離，係以於相鄰之固定部間的中央位置成為最大，且隨著從該中央位置接近於固定部(一對供電部45,46或一對虛擬端子45d,46d)而變小的方式設定。Further, in the present embodiment, at least when the heat generating body 42 is at room temperature, the distance between the heat generating body 42 and the inner wall of the heat insulating body 33 is maximized at the center position between the adjacent fixed portions. It is set so as to become smaller as the center position approaches the fixed portion (the pair of power supply portions 45, 46 or the pair of dummy terminals 45d, 46d).
第12圖為本實施形態在昇溫前之加熱單元30的水平剖視圖。由第12圖可知，發熱體42與隔熱體33之內壁之間的距離(圖中B)，係構成為於一對供電部45,46及一對虛擬端子45d,46d之間的中央位置分別成為最大。發熱體42與隔熱體33之內壁之間的距離，係構成為隨著從該中央位置接近於供電部45,46或虛擬端子45d,46d而逐漸變小。亦即，圖中，成為B＞A、B＞C。Fig. 12 is a horizontal sectional view of the heating unit 30 before the temperature rise in the present embodiment. As can be seen from Fig. 12, the distance between the heating element 42 and the inner wall of the heat insulator 33 (B in the figure) is defined as the center between the pair of power supply portions 45, 46 and the pair of dummy terminals 45d, 46d. The positions are respectively the largest. The distance between the heating element 42 and the inner wall of the heat insulator 33 is configured to gradually decrease as it approaches the power supply portions 45, 46 or the dummy terminals 45d, 46d from the center position. That is, in the figure, it becomes B>A, B>C.
在此狀態下，當使發熱體42昇溫至例如基板處理時之溫度時，發熱體42之各部分因熱膨脹而朝第14圖所示方向伸長。第14圖係以箭頭方向及長度來分別顯示發熱體42之各部分的位移方向及位移量。發熱體42係藉由一對供電部45,46及一對虛擬端子45d,46d而固定於二個部位，所以，發熱體42之各部分，係以一對供電部45,46附近之區域(以符號A2a表示的區域)及一對虛擬端子45d,46d附近之區域(以符號A2b表示的區域)分別作為起點，以朝外側膨脹之方式(亦即，圖中以朝上下方向伸長的方式)進行位移。又，發熱體42之位移量係隨著接近於一對供電部45,46及一對虛擬端子45d,46d之間的中央位置(圖中的上下端)而變大，並於該中間位置成為最大。In this state, when the heating element 42 is heated to a temperature at the time of substrate processing, for example, each portion of the heating element 42 is elongated in the direction shown in Fig. 14 due to thermal expansion. Fig. 14 shows the displacement direction and the displacement amount of each portion of the heating element 42 in the direction of the arrow and the length. Since the heating element 42 is fixed to the two portions by the pair of feeding portions 45 and 46 and the pair of dummy terminals 45d and 46d, the respective portions of the heating element 42 are adjacent to the pair of feeding portions 45 and 46 ( The area indicated by the symbol A2a) and the area near the pair of dummy terminals 45d, 46d (the area indicated by the symbol A2b) are respectively used as the starting point to expand outward (that is, the figure is elongated in the vertical direction) Perform displacement. Further, the displacement amount of the heating element 42 becomes larger as it approaches the center position (the upper and lower ends in the drawing) between the pair of power supply portions 45, 46 and the pair of virtual terminals 45d, 46d, and becomes at the intermediate position. maximum.
其結果，至少於發熱體42處於基板處理時之溫度狀態時，發熱體42與隔熱體33之內壁之間的距離，係涵蓋發熱體42之圓周方向成為相等距離。第13圖為本實施形態在昇溫後(基板處理時之溫度狀態的)加熱單元30的水平剖視圖。如第13圖所示，至少於發熱體42處於基板處理時之溫度狀態時，發熱體42與隔熱體33之內壁之間的距離，因熱膨脹而涵蓋發熱體42之圓周方向成為相等，圖中，成為A≒B≒C。As a result, at least when the heating element 42 is in the temperature state at the time of substrate processing, the distance between the heating element 42 and the inner wall of the heat insulator 33 is such that the circumferential direction of the heating element 42 is equal. Fig. 13 is a horizontal cross-sectional view of the heating unit 30 after the temperature rise (in the temperature state at the time of substrate processing) in the embodiment. As shown in Fig. 13, at least when the heat generating body 42 is in the temperature state at the time of substrate processing, the distance between the heat generating body 42 and the inner wall of the heat insulator 33 is equal to the circumferential direction of the heat generating body 42 due to thermal expansion. In the figure, it becomes A≒B≒C.
根據本實施形態，除可獲得第4實施形態所示之效果外，還可獲得以下所示(a)～(c)中之一個或複數個效果。According to the present embodiment, in addition to the effects described in the fourth embodiment, one or a plurality of effects (a) to (c) shown below can be obtained.
(a)根據本實施形態，可減小發熱體42之最大位移量。其結果，可更確實地防止發熱體42與隔熱體33之接觸。(a) According to this embodiment, the maximum displacement amount of the heating element 42 can be reduced. As a result, the contact of the heating element 42 with the heat insulator 33 can be more reliably prevented.
第9圖為顯示與第4實施形態之發熱體的熱膨脹有關的測量結果之示意圖，第15圖為顯示與第5實施形態之發熱體42的熱膨脹有關的測量結果之示意圖。在第9及第15圖所示之評估中，均於室溫(20℃)下使直徑Φ 為481mm的環狀發熱體42分別昇溫至屬基板處理溫度之1220℃，來測量發熱體42之各部分的位移量。又，發熱體42係在20℃～1250℃之溫度區域內，藉由線膨脹係數為15×10-6 的KANTHAL APM(登錄商標)而形成為蛇行狀。又，因昇溫所致之發熱體42外周的延伸量成為(發熱體42之長度)×(1250-20)×15×10-6 mm。Fig. 9 is a view showing measurement results relating to thermal expansion of the heating element of the fourth embodiment, and Fig. 15 is a view showing measurement results relating to thermal expansion of the heating element 42 of the fifth embodiment. In the evaluations shown in Figs. 9 and 15, the annular heating elements 42 having a diameter Φ of 481 mm were respectively heated to 1220 ° C which is the substrate processing temperature at room temperature (20 ° C) to measure the heating element 42. The amount of displacement of each part. Further, the heating element 42 is formed in a serpentine shape by a KANTHAL APM (registered trademark) having a linear expansion coefficient of 15 × 10 -6 in a temperature range of 20 ° C to 1250 ° C. Moreover, the amount of extension of the outer circumference of the heating element 42 due to the temperature rise is (the length of the heating element 42) × (1250-20) × 15 × 10 -6 mm.
其結果，於第4實施形態之發熱體42中，從直徑Φ 為481mm增加至490.2mm。另外，發熱體42之各部分的位置偏移量，如圖所示，隨著離開一對供電部45,46而逐漸變大(以符號A1表示之區域為基點，為3.8mm、6.5mm、8.6mm)，在最遠離一對供電部45,46的部位成為最大的9.2mm。另外，在最遠離一對供電部45,46的部位，於圓周方向(切線方向)幾乎沒有位置偏移，而僅於半徑方向產生位置偏移。As a result, in the heating element 42 of the fourth embodiment, the diameter Φ is increased from 481 mm to 490.2 mm. Further, as shown in the figure, the positional shift amount of each portion of the heating element 42 gradually increases as it leaves the pair of power supply portions 45, 46 (the area indicated by the symbol A1 is the base point, and is 3.8 mm, 6.5 mm, 8.6 mm) is the largest 9.2 mm at the portion farthest from the pair of power supply portions 45, 46. Further, in the portion farthest from the pair of power supply portions 45, 46, there is almost no positional deviation in the circumferential direction (tangential direction), and only a positional shift occurs in the radial direction.
相對於此，於第5實施形態之發熱體42中，隨著離開固定部(一對供電部45,46或一對虛擬端子45d,46d)而逐漸變大，並於相鄰之固定部間的中央位置(一對供電部45,46與一對虛擬端子45d,46d之間的中央位置)成為最大之7.5mm。亦即，根據本實施形態，與第4實施形態比較，可將發熱體42之最大位移量減小20%左右。又，在位移量成為最大之中央位置，不於圓周方向(切線方向)產生位置偏移，而主要於半徑方向產生位置偏移。On the other hand, in the heat generating body 42 of the fifth embodiment, the heat generating body 42 gradually increases as it leaves the fixing portion (the pair of power feeding portions 45, 46 or the pair of dummy terminals 45d, 46d), and is adjacent to the fixed portion. The center position (the center position between the pair of power supply portions 45, 46 and the pair of dummy terminals 45d, 46d) becomes 7.5 mm at the maximum. In other words, according to the present embodiment, the maximum displacement amount of the heating element 42 can be reduced by about 20% as compared with the fourth embodiment. Further, at the center position where the displacement amount is the largest, a positional shift occurs in the circumferential direction (tangential direction), and a positional shift occurs mainly in the radial direction.
(b)根據本實施形態，係將與一對供電部45,46的連接部位固定，並進一步藉由一對虛擬端子45d,46d來固定其相反側。因此，如第14圖所示，可使發熱體42之各部分的位移方向與發熱體42之半徑方向(與隔熱體33之內壁垂直之方向)大致一致。尤其是，可在位移量成為最大之中央位置(一對供電部45,46與一對虛擬端子45d,46d之間的中央位置)，不於圓周方向(切線方向)產生位置偏移，而僅於半徑方向產生位置偏移。其結果，即使於該中央位置追加設置作為固定部之橋形銷或T型銷構件的情況，仍可抑制因熱膨脹所引起之發熱體42與銷構件的接觸、干涉。亦即，根據本實施形態，可防止發熱體42之變形、損傷、短路等，並可進一步提高發熱體42之保持強度。(b) According to the present embodiment, the connection portion with the pair of power supply portions 45, 46 is fixed, and the opposite side is further fixed by the pair of dummy terminals 45d, 46d. Therefore, as shown in Fig. 14, the displacement direction of each portion of the heating element 42 can be made substantially coincident with the radial direction of the heating element 42 (the direction perpendicular to the inner wall of the heat insulator 33). In particular, the center position (the center position between the pair of power supply portions 45, 46 and the pair of dummy terminals 45d, 46d) at which the displacement amount becomes maximum can be shifted from the circumferential direction (tangential direction), and only A positional shift occurs in the radial direction. As a result, even when a bridge pin or a T-shaped pin member as a fixing portion is additionally provided at the center position, contact and interference between the heat generating body 42 and the pin member due to thermal expansion can be suppressed. In other words, according to the present embodiment, deformation, damage, short-circuiting, and the like of the heating element 42 can be prevented, and the holding strength of the heating element 42 can be further improved.
又，在不固定與供電部45,46之連接部位的相反側之第4實施形態中，如第8圖所示，例如，從一對供電部45,46偏移90度之位置(相當於第2實施形態中之一對供電部45,46與一對虛擬端子45d,46d之間的中央位置)上的發熱體42之位移方向，與發熱體42之半徑方向不一致，而是略微靠近切線方向。因此，假設不藉由一對虛擬端子45d,46d來固定，而是於從一對供電部45,46偏移90度之位置追加設置上述銷構件的話，會因熱膨脹而產生發熱體42與銷構件的接觸、干涉，進而招致發熱體42之變形、損傷、短路等。Further, in the fourth embodiment, which is not fixed to the side opposite to the connection portion between the power supply portions 45 and 46, as shown in Fig. 8, for example, the pair of power supply portions 45 and 46 are shifted by 90 degrees (equivalent to In the second embodiment, the direction of displacement of the heating element 42 in the center position between the feeding portions 45 and 46 and the pair of dummy terminals 45d and 46d does not coincide with the radial direction of the heating element 42, but is slightly close to the tangent. direction. Therefore, if the pin member is additionally provided at a position shifted by 90 degrees from the pair of power supply portions 45, 46 without being fixed by the pair of dummy terminals 45d, 46d, the heat generating body 42 and the pin are generated due to thermal expansion. The contact and interference of the members cause deformation, damage, short circuit, and the like of the heating element 42.
(c)根據本實施形態，因為發熱體42之各部分的位移方向與發熱體42之半徑方向大致一致，所以，即使在追加設置例如橋型或T型保持構件作為固定部的情況，仍可不需要於發熱體42側設置用來避免發熱體42與保持構件的接觸、干涉之缺口(延伸量孔)。因此，可避免發熱體42之強度下降或發熱量降低，又，假設不藉由一對虛擬端子45d,46d來固定，而是於從一對供電部45,46偏移90度之位置追加設置上述銷構件的話，則為了避免發熱體42與保持構件的接觸、干涉，變得需要設置缺口，而恐有招致發熱體42之強度下降或發熱量降低的情況。(c) According to the present embodiment, since the displacement direction of each portion of the heating element 42 substantially coincides with the radial direction of the heating element 42, even if a bridge type or a T-shaped holding member is additionally provided as a fixing portion, it is not necessary. It is necessary to provide a notch (extension hole) for preventing contact and interference between the heating element 42 and the holding member on the side of the heating element 42. Therefore, it is possible to prevent the strength of the heating element 42 from decreasing or the amount of heat generation from being lowered, and it is assumed that it is not fixed by the pair of dummy terminals 45d and 46d, but is additionally set at a position shifted by 90 degrees from the pair of power supply units 45 and 46. In order to prevent contact and interference between the heat generating element 42 and the holding member, it is necessary to provide a notch, and the strength of the heating element 42 may be lowered or the amount of heat generation may be lowered.
〈其他實施形態〉<Other Embodiments>
以上，雖具體說明了本發明之實施形態，但本發明不限定於上述實施形態，只要在未超出本發明的要旨的範圍內，即可作種種之變更。The embodiments of the present invention have been described in detail above, but the present invention is not limited to the embodiments described above, and various modifications may be made without departing from the scope of the invention.
例如，上述實施形態中，作為將發熱體42固定於隔熱體33之內壁的固定部而言，雖舉例說明了一對供電部45,46、一對虛擬端子45d,46d，但本發明不限定於上述形態。亦即，此等構件不一定需要成對。另外，例如可將固定於隔熱體33之內壁的銷構件作為固定部使用。第11(a)圖為作為固定部的變化例之橋型銷構件45b周邊之局部放大圖，第11(b)圖為放大部分之側視圖。另外，雖未圖示，但也可將T字型之銷構件或L字形的銷構件用作為固定部。For example, in the above-described embodiment, the fixing portion that fixes the heating element 42 to the inner wall of the heat insulator 33 has a pair of power feeding portions 45 and 46 and a pair of dummy terminals 45d and 46d. However, the present invention has been described. It is not limited to the above form. That is, such components do not necessarily need to be paired. Further, for example, a pin member fixed to the inner wall of the heat insulator 33 can be used as a fixing portion. Fig. 11(a) is a partial enlarged view of the periphery of the bridge pin member 45b as a modification of the fixing portion, and Fig. 11(b) is a side view showing the enlarged portion. Further, although not shown, a T-shaped pin member or an L-shaped pin member may be used as the fixing portion.
另外，例如在上述實施形態中，將藉由固定部固定發熱體42之部位設為一個或二個部位，但本發明不限定於該情況，例如，還可固定於3個以上的部位。在此情況下，至少於發熱體處於室溫狀態時，發熱體與隔熱體之內壁之間的距離，係於相鄰之固定部間的中央位置成為最大，隨著從該中央位置接近於固定部而變小。固定部位增加越多，則越可減少最大位移量，另外，可提高發熱體42之保持強度。又，複數個固定部還可涵蓋發熱體42之圓周方向以均等間隔配置。Further, for example, in the above-described embodiment, the portion where the heating element 42 is fixed by the fixing portion is one or two portions. However, the present invention is not limited to this case, and may be fixed to, for example, three or more portions. In this case, at least when the heat generating body is at room temperature, the distance between the heat generating body and the inner wall of the heat insulator is maximized at the center position between the adjacent fixed portions, and is approached from the center position. It becomes smaller at the fixed portion. The more the fixed portion is increased, the more the maximum displacement can be reduced, and the holding strength of the heating element 42 can be improved. Further, the plurality of fixing portions may further cover the circumferential direction of the heating element 42 at equal intervals.
另外，上述情況下，複數個固定部可統一為像一對供電部45,46、一對虛擬端子45d,46d那樣之貫穿構件，也可統一為像橋型之銷構件45b那樣的銷構件、或此等的組合。Further, in the above case, the plurality of fixing portions may be unified into a penetrating member such as the pair of feeding portions 45 and 46 and the pair of dummy terminals 45d and 46d, or may be unified as a pin member such as a bridge pin member 45b. Or a combination of these.
另外，例如，本發明不限定於在發熱體42的上下端設置山峰部(突出部)42a及山谷部(缺口部)42b的情況。亦即，發熱體42不限定於形成為蛇行狀(波狀)的情況，還可形成為長條狀。Further, for example, the present invention is not limited to the case where the mountain portion (protrusion portion) 42a and the valley portion (notch portion) 42b are provided at the upper and lower ends of the heating element 42. In other words, the heating element 42 is not limited to being formed in a meandering shape (wave shape), and may be formed in an elongated shape.
另外，本發明不限定於半導體製造裝置，還適合地應用於處理如LCD裝置般之玻璃基板的裝置。另外，處理室之構成亦不限定於上述實施形態。亦即，與基板處理之具體內容無關，除了成膜處理外，還可為退火處理、氧化處理、氮化處理、擴散處理等的處理。另外，成膜處理還可為形成例如CVD、PVD、氧化膜、氮化膜的處理或形成包含金屬之膜的處理。又，還可為以微影術實施之曝光處理、光阻液或蝕刻液的塗佈處理。Further, the present invention is not limited to a semiconductor manufacturing apparatus, and is also suitably applied to a device for processing a glass substrate such as an LCD device. Further, the configuration of the processing chamber is not limited to the above embodiment. That is, irrespective of the specific content of the substrate processing, in addition to the film formation process, treatment such as annealing treatment, oxidation treatment, nitridation treatment, diffusion treatment, or the like may be employed. Further, the film formation treatment may be a treatment of forming, for example, CVD, PVD, an oxide film, a nitride film, or a process of forming a film containing a metal. Further, it may be a coating treatment by a lithography process, a photoresist solution or an etching solution.
以上，雖具體地說明了本發明之實施形態，但本發明不限定於上述實施形態，只要在未超出本發明之要旨的範圍內，即可作種種之變更。The embodiments of the present invention have been specifically described above, but the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the scope of the invention.
〈本發明之較佳態樣〉<Preferred Aspects of the Invention>
以下，針對本發明之較佳態樣附加說明如下。Hereinafter, a preferred aspect of the present invention will be additionally described below.
本發明之第1態樣為，一種加熱裝置，其具備：發熱體，係以複數個山峰部與山谷部交互地相連的方式形成為蛇行狀且兩端固定；保持體承受部，係分別設於該山谷部之末端，形成作為具有比該山谷部之寬度大的寬度之缺口部；隔熱體，係設於該發熱體之外周；及保持體，係配置於該保持體承受部內且固定於該隔熱體上。According to a first aspect of the present invention, a heating device includes: a heating element formed in a meandering manner in which a plurality of mountain portions are alternately connected to a valley portion, and both ends are fixed; and the holding body receiving portion is separately provided a notch portion having a width larger than a width of the valley portion is formed at an end of the valley portion; a heat insulator is disposed on an outer circumference of the heat generating body; and a holding body is disposed in the holder receiving portion and fixed On the insulation.
較佳為，該保持體承受部係形成作為具有比該山谷部之寬度大的直徑之圓形缺口部。Preferably, the holder receiving portion is formed as a circular notch portion having a diameter larger than a width of the valley portion.
又，較佳為，該發熱體具備：環狀部，係由該複數個山峰部與山谷部交互地相連的部位形成；及一對供電部，係貫穿該隔熱體而固定於該隔熱體上，且分別與該環狀部之兩端連接；該保持體承受部之寬度係設定為隨著遠離該一對供電部而增大。Moreover, it is preferable that the heating element includes an annular portion formed by a portion where the plurality of mountain portions are alternately connected to the valley portion, and a pair of power supply portions that are fixed to the heat insulation through the heat insulator The body is connected to both ends of the annular portion, and the width of the holder receiving portion is set to increase as moving away from the pair of power supply portions.
又，較佳為，該發熱體具備：環狀部，係由該複數個山峰部與山谷部交互地相連的部位形成；及一對供電部，係貫穿該隔熱體而固定於該隔熱體上，且分別與該環狀部之兩端連接；該保持體承受部與該保持體之相對位置，係在該環狀部之全周各部分中的至少一部分被設定為不同。Moreover, it is preferable that the heating element includes an annular portion formed by a portion where the plurality of mountain portions are alternately connected to the valley portion, and a pair of power supply portions that are fixed to the heat insulation through the heat insulator The body is connected to both ends of the annular portion, and the relative position of the holder receiving portion and the holder is set to be different in at least a part of each of the entire circumference of the annular portion.
本發明之第2態樣為，如第1態樣之加熱裝置，其中該發熱體具備：環狀部，係由該複數個山峰部與山谷部交互地相連的部位形成；及一對供電部，係貫穿該隔熱體而固定於該隔熱體上，且分別與該環狀部之兩端連接；該隔熱體係以圍繞於該環狀部之外周面的方式形成為筒狀，且於該隔熱體之內周面具有收容該環狀部的溝狀收容部；該環狀部中的該山峰部前端，係以朝該環狀部之中心的方式相對於該環狀部中除了該山峰部前端以外的中央部分別呈鈍角傾斜；該收容部之兩側壁係相對於該收容部之底面分別呈鈍角傾斜；該山峰部前端之傾斜角度與該收容部之兩側壁的傾斜角度，係設定為相同的角度。According to a second aspect of the present invention, in the heating apparatus of the first aspect, the heating element includes: an annular portion formed by a portion where the plurality of peak portions are alternately connected to the valley portion; and a pair of power supply portions The heat insulator is fixed to the heat insulator and connected to both ends of the annular portion; the heat insulating system is formed in a cylindrical shape so as to surround the outer peripheral surface of the annular portion, and The inner peripheral surface of the heat insulator has a groove-shaped accommodating portion for accommodating the annular portion; and the front end of the mountain portion in the annular portion is opposed to the annular portion toward the center of the annular portion The central portion except the front end of the mountain portion is inclined at an obtuse angle; the two side walls of the receiving portion are inclined at an obtuse angle with respect to the bottom surface of the receiving portion; the inclination angle of the front end of the mountain portion and the inclination angle of the two side walls of the receiving portion , set to the same angle.
較佳為，該收容部中之該底面的寬度係形成為比該中央部之寬度大，在該收容部之該底面具有以比該中央部窄之寬度形成的階差部。Preferably, the width of the bottom surface of the accommodating portion is formed to be larger than the width of the central portion, and the bottom surface of the accommodating portion has a step portion formed by a width narrower than the central portion.
本發明之第3態樣為，如第1態樣之加熱裝置，其中該發熱體具備：環狀部，係由該複數個山峰部與山谷部交互地相連的部位形成；及一對供電部，係貫穿該隔熱體而固定於該隔熱體上，且分別與該環狀部之兩端連接；該隔熱體係以圍繞於該環狀部之外周面的方式形成為筒狀，且於該隔熱體之內周面具有收容該環狀部的溝狀收容部；該收容部之底面與鄰接於該底面的該環狀部中除了該山峰部前端以外的中央部之間的距離，係在該收容部及該環狀部之全周各部中的至少一部分被設定為不同。According to a third aspect of the present invention, in the heating apparatus of the first aspect, the heating element includes: an annular portion formed by a portion where the plurality of peak portions are alternately connected to the valley portion; and a pair of power supply portions The heat insulator is fixed to the heat insulator and connected to both ends of the annular portion; the heat insulating system is formed in a cylindrical shape so as to surround the outer peripheral surface of the annular portion, and The inner peripheral surface of the heat insulator has a groove-shaped accommodating portion for accommodating the annular portion; a distance between a bottom surface of the accommodating portion and a central portion of the annular portion adjacent to the bottom surface except the front end of the mountain portion At least a part of the entire circumference of the accommodating portion and the annular portion is set to be different.
較佳為，至少在該環狀部處於室溫狀態時，該距離係在該收容部及該環狀部的全周各部分中的至少一部分被設定為不同。Preferably, at least a part of the entire circumference of the accommodating portion and the annular portion is set to be different at least when the annular portion is at a room temperature state.
較佳為，至少在該環狀部處於基板處理時之溫度狀態時，該距離係以該收容部及該環狀部之全周各部分因熱膨脹而成為相同距離的方式設定。Preferably, at least when the annular portion is in a temperature state at the time of substrate processing, the distance is set such that the entire portion of the accommodating portion and the annular portion are at the same distance due to thermal expansion.
又，較佳為，該距離係設定為隨著遠離該一對供電部而增大。Moreover, it is preferable that the distance is set to increase as moving away from the pair of power supply units.
本發明之第4態樣為：一種基板處理裝置，其具備：加熱裝置，其具備：發熱體，係以複數個山峰部與山谷部交互地相連的方式形成為蛇行狀且兩端固定；保持體承受部，係分別設於該山谷部之末端，形成作為具有比該山谷部之寬度大的寬度之缺口部；隔熱體，係設於該發熱體之外周；及保持體，係配置於該保持體承受部內且固定於該隔熱體上；及處理室，係設於該加熱裝置之內部，用來處理基板。According to a fourth aspect of the present invention, a substrate processing apparatus includes: a heating device including: a heating element formed in a meandering manner in which a plurality of mountain portions are alternately connected to a valley portion, and both ends are fixed; The body receiving portion is provided at an end of the valley portion, and is formed as a notch having a width larger than a width of the valley portion; the heat insulator is disposed on an outer circumference of the heating element; and the holding body is disposed on the body The holder receiving portion is fixed to the heat insulator; and the processing chamber is disposed inside the heating device for processing the substrate.
較佳為，該保持體承受部係形成作為具有比該山谷部之寬度大的直徑之圓形缺口部。Preferably, the holder receiving portion is formed as a circular notch portion having a diameter larger than a width of the valley portion.
又，較佳為，該發熱體具備：環狀部，係由該複數個山峰部與山谷部交互地相連的部位形成；及一對供電部，係貫穿該隔熱體而固定於該隔熱體上，且分別與該環狀部之兩端連接；該保持體承受部之寬度，係設定為隨著遠離該一對供電部而增大。Moreover, it is preferable that the heating element includes an annular portion formed by a portion where the plurality of mountain portions are alternately connected to the valley portion, and a pair of power supply portions that are fixed to the heat insulation through the heat insulator The body is connected to both ends of the annular portion, and the width of the holder receiving portion is set to increase as moving away from the pair of power supply portions.
又，較佳為，該發熱體具備：環狀部，係由該複數個山峰部與山谷部交互地相連的部位形成；及一對供電部，係貫穿該隔熱體而固定於該隔熱體上，且分別與該環狀部之兩端連接；該隔熱體係以圍繞於環狀部之外周面的方式形成為筒狀，且於該隔熱體之內周面具有收容該環狀部的溝狀收容部；該環狀部中的該山峰部前端，係以朝向該環狀部之中心的方式相對於該環狀部中除了該山峰部前端以外的中央部分別呈鈍角傾斜；該收容部之兩側壁係相對於該收容部之底面分別呈鈍角傾斜；該山峰部前端之傾斜角度與該收容部之兩側壁的傾斜角度，係設定為相同的角度。Moreover, it is preferable that the heating element includes an annular portion formed by a portion where the plurality of mountain portions are alternately connected to the valley portion, and a pair of power supply portions that are fixed to the heat insulation through the heat insulator The body is connected to both ends of the annular portion; the heat insulating system is formed in a tubular shape so as to surround the outer circumferential surface of the annular portion, and has a ring shape on the inner circumferential surface of the heat insulator. a groove-shaped accommodating portion of the portion; the tip end of the mountain portion in the annular portion is inclined at an obtuse angle with respect to a central portion of the annular portion other than the front end of the mountain portion so as to face the center of the annular portion; The two side walls of the accommodating portion are inclined at an obtuse angle with respect to the bottom surface of the accommodating portion; the inclination angle of the front end of the mountain portion and the inclination angle of the two side walls of the accommodating portion are set at the same angle.
又，較佳為，該收容部中之該底面的寬度係形成為大於該環狀部中除了該山峰部前端以外的中央部之寬度，在該收容部之該底面具有以比該中央部窄之寬度形成的階差部。Further, preferably, the width of the bottom surface of the accommodating portion is formed to be larger than a width of a central portion of the annular portion other than the front end of the mountain portion, and the bottom surface of the accommodating portion has a narrower portion than the central portion The step portion formed by the width.
較佳為，該發熱體具備：環狀部，係由該複數個山峰部與山谷部交互地相連的部位形成；及一對供電部，係貫穿該隔熱體而固定於該隔熱體上，且分別與該環狀部之兩端連接；該隔熱體係以圍繞於該環狀部之外周面的方式形成為筒狀，且於該隔熱體之內周面具有收容該環狀部的溝狀收容部；該收容部之底面與鄰接於該底面的該環狀部中除了該山峰部前端以外的中央部之間的距離，係在該收容部及該環狀部之全周各部中的至少一部分被設定為不同。Preferably, the heating element includes an annular portion formed by a portion in which the plurality of mountain portions are alternately connected to the valley portion, and a pair of power supply portions that are fixed to the heat insulator and penetrate the heat insulator And respectively connected to both ends of the annular portion; the heat insulation system is formed in a cylindrical shape so as to surround the outer circumferential surface of the annular portion, and has an annular portion on the inner circumferential surface of the heat insulator a groove-shaped accommodating portion; a distance between a bottom surface of the accommodating portion and a central portion of the annular portion adjacent to the bottom surface other than the front end of the mountain portion, and the entire circumference of the accommodating portion and the annular portion At least a part of them are set to be different.
又，較佳為，至少在該環狀部處於室溫狀態時，該距離係在該收容部及該環狀部的全周各部分中的至少一部分被設定為不同。Further, preferably, at least a part of the entire circumference of the accommodating portion and the annular portion is set to be different at least when the annular portion is at a room temperature state.
較佳為，至少在該環狀部處於基板處理時之溫度狀態時，該距離係係以該收容部及該環狀部之全周各部分因熱膨脹而成為相同距離的方式設定。Preferably, at least when the annular portion is in a temperature state at the time of substrate processing, the distance is set such that the entire portion of the accommodating portion and the annular portion are at the same distance due to thermal expansion.
較佳為，該距離係設定為隨著遠離該一對供電部而增大。Preferably, the distance is set to increase as moving away from the pair of power supply units.
本發明之第5態樣為：一種半導體裝置之製造方法，其具備：將基板搬入設於加熱裝置內部之處理室內的製程；及將該加熱裝置所具備且以複數個山峰部與山谷部交互地相連的方式形成為蛇行狀的發熱體之兩端，固定於該發熱體之外周所設置的隔熱體上，並將保持體配置於分別被設於該山谷部之末端且形成作為具有比該山谷部之寬度大的寬度之缺口部的保持體承受部內，且固定於該隔熱體上，藉此，一面保持該發熱體之位置，一面使該發熱體昇溫而對該處理室內之基板加熱來進行處理的製程。A fifth aspect of the present invention provides a method of manufacturing a semiconductor device, comprising: a process of loading a substrate into a processing chamber provided inside the heating device; and configuring the heating device to interact with the valley portion by a plurality of mountain portions Two ends of the heating element formed in a meandering manner are fixed to the heat insulator provided on the outer circumference of the heating element, and the holding body is disposed at the end of each of the valley portions and formed as a ratio The holder receiving portion of the notch portion having a wide width of the valley portion is fixed to the heat insulator, thereby heating the heat generating body while holding the position of the heat generating body to the substrate in the processing chamber A process that is heated for processing.
本發明之其他態樣為：一種加熱裝置，其具備：發熱體，具有由複數個山峰部與山谷部交互地相連的部位形成之環狀部；及隔熱體，係以圍繞於該環狀部之外周面的方式形成為筒狀，且於該隔熱體之內周面具有收容該環狀部的溝狀收容部；該發熱體具有貫穿該隔熱體而固定於該隔熱體上，且分別與該環狀部之兩端連接的一對供電部；該環狀部中的該山峰部前端，係以朝向該環狀部之中心的方式相對於該環狀部中除了該山峰部前端以外的中央部分別呈鈍角傾斜；該收容部之兩側壁係相對於該收容部之底面分別呈鈍角傾斜；該山峰部前端之傾斜角度與該收容部之兩側壁的傾斜角度，係設定為相同的角度。Another aspect of the present invention is: a heating device comprising: a heating element having an annular portion formed by a portion where a plurality of mountain portions are alternately connected to a valley portion; and a heat insulator surrounding the ring The outer peripheral surface of the portion is formed in a tubular shape, and has a groove-shaped accommodating portion for accommodating the annular portion on the inner circumferential surface of the heat insulator; the heat generating body is fixed to the heat insulator by penetrating the heat insulator And a pair of power supply portions respectively connected to both ends of the annular portion; the front end of the mountain portion in the annular portion is opposite to the mountain portion in the annular portion toward the center of the annular portion The central portions other than the front end are inclined at an obtuse angle; the two side walls of the receiving portion are inclined at an obtuse angle with respect to the bottom surface of the receiving portion; the inclination angle of the front end of the mountain portion and the inclination angle of the two side walls of the receiving portion are set For the same angle.
較佳為，該收容部中之該底面的寬度係形成為比該中央部之寬度大，在該收容部之該底面具有以比該中央部窄之寬度形成的階差部。Preferably, the width of the bottom surface of the accommodating portion is formed to be larger than the width of the central portion, and the bottom surface of the accommodating portion has a step portion formed by a width narrower than the central portion.
本發明之又一態樣為，一種加熱裝置，其具備：發熱體，具有由複數個山峰部與山谷部交互地相連的部位形成之環狀部；及隔熱體，係以圍繞於環狀部之外周面的方式形成為筒狀，且於該隔熱體之內周面具有收容該環狀部的溝狀收容部；該發熱體具有貫穿該隔熱體而固定於該隔熱體上，且分別與該環狀部之兩端連接的一對供電部；該收容部之底面與鄰接於該底面的該環狀部中除了該山峰部前端以外的中央部之間的距離，係在該收容部及該環狀部之全周各部中的至少一部分被設定為不同。According to still another aspect of the present invention, a heating device includes: a heating element having an annular portion formed by a portion where a plurality of mountain portions are alternately connected to a valley portion; and a heat insulating body surrounding the ring shape The outer peripheral surface of the portion is formed in a tubular shape, and has a groove-shaped accommodating portion for accommodating the annular portion on the inner circumferential surface of the heat insulator; the heat generating body is fixed to the heat insulator by penetrating the heat insulator And a pair of power supply portions respectively connected to both ends of the annular portion; a distance between a bottom surface of the receiving portion and a central portion of the annular portion adjacent to the bottom surface except the front end of the mountain portion is At least a part of each of the accommodating portion and the entire circumference of the annular portion is set to be different.
較佳為，至少在該環狀部處於室溫狀態時，該距離係在該收容部及該環狀部的全周各部分中的至少一部分被設定為不同。Preferably, at least a part of the entire circumference of the accommodating portion and the annular portion is set to be different at least when the annular portion is at a room temperature state.
較佳為，至少在該環狀部處於基板處理時之溫度狀態時，該距離係以該收容部及該環狀部之全周各部分因熱膨脹而成為相同距離的方式設定。Preferably, at least when the annular portion is in a temperature state at the time of substrate processing, the distance is set such that the entire portion of the accommodating portion and the annular portion are at the same distance due to thermal expansion.
〈本發明之較佳態樣〉<Preferred Aspects of the Invention>
以下，針對本發明之較佳態樣附加說明如下。Hereinafter, a preferred aspect of the present invention will be additionally described below.
本發明之第6態樣為：一種加熱裝置，其具備：發熱體，係形成為環狀；隔熱體，係以圍繞於該發熱體之外周的方式設置；及固定部，用以將該發熱體固定於該隔熱體之內壁；該加熱裝置之特徵為，至少在該發熱體處於室溫狀態時，該發熱體與該隔熱體之內壁間的距離，係設定為隨著遠離該固定部而增大。According to a sixth aspect of the present invention, a heating device includes: a heat generating body formed in an annular shape; a heat insulating body disposed to surround an outer circumference of the heat generating body; and a fixing portion for fixing the heat generating body The heating element is fixed to the inner wall of the heat insulator; the heating device is characterized in that the distance between the heat generating body and the inner wall of the heat insulating body is set at least when the heat generating body is at room temperature Increase away from the fixed portion.
較佳為，該固定部係沿該發熱體之圓周方向設有複數個；至少在該發熱體處於室溫狀態時，該發熱體與該隔熱體之內壁間的距離，係設定為隨著從鄰接之該固定部間的中央位置接近於該固定部而變小。Preferably, the fixing portion is provided in a plurality of directions along the circumferential direction of the heating element; at least when the heating element is at room temperature, the distance between the heating element and the inner wall of the heat insulating body is set to follow The center position between the adjacent fixed portions is made smaller as close to the fixed portion.
又，較佳為，至少在該發熱體處於室溫狀態時，該發熱體與該隔熱體之內壁間的距離，係設定為於鄰接之該固定部間的中央位置成為最大。Further, preferably, at least when the heat generating body is at room temperature, the distance between the heat generating body and the inner wall of the heat insulating body is set to be the largest at a central position between the adjacent fixed portions.
較佳為，至少在該發熱體處於加熱處理時之溫度狀態時，該發熱體與該隔熱體之內壁間的距離，係設定為涵蓋該發熱體之圓周方向成為相同。Preferably, at least when the heat generating body is in a temperature state at the time of heat treatment, a distance between the heat generating body and an inner wall of the heat insulating body is set to be the same so as to cover the circumferential direction of the heat generating body.
較佳為，複數個該固定部涵蓋該發熱體之圓周方向以均等間隔配置。Preferably, the plurality of fixing portions are arranged at equal intervals in the circumferential direction of the heat generating body.
較佳為，該固定部中至少一個固定部，係作為貫穿該隔熱體且固定於該隔熱體上，分別與該發熱體之兩端連接的一對供電部而構成。Preferably, at least one of the fixing portions is configured as a pair of power supply portions that are connected to the heat insulator and are fixed to the heat insulator and are connected to both ends of the heat generating body.
又，較佳為，複數個該固定部中至少一個該固定部，係作為貫穿該隔熱體且固定於該隔熱體上的貫穿構件而構成。Moreover, it is preferable that at least one of the plurality of fixing portions is configured as a penetrating member that penetrates the heat insulator and is fixed to the heat insulator.
較佳為，複數個該固定部中至少一個該固定部，係構成為固定於該隔熱體之內壁上的銷構件。Preferably, at least one of the plurality of fixing portions is configured as a pin member fixed to an inner wall of the heat insulator.
根據本發明之其他態樣：一種半導體裝置之製造方法，其特徵為具備：將基板搬入設於加熱裝置之發熱體內側的處理室內的製程，該加熱裝置具備形成為環狀之發熱體、以圍繞於該發熱體之外周的方式設置的隔熱體、及用以將該發熱體固定於該隔熱體之內壁的固定部；及使該發熱體昇溫而對該處理室內之基板加熱來進行處理的製程；至少在該發熱體處於室溫狀態時，該發熱體與該隔熱體之內壁間的距離，係設定為隨著遠離該固定部而增大。According to another aspect of the present invention, a method of manufacturing a semiconductor device includes: a process of loading a substrate into a processing chamber provided inside a heating element of a heating device, wherein the heating device includes a heating element formed in a ring shape, a heat insulator provided around the outer circumference of the heat generating body, and a fixing portion for fixing the heat generating body to the inner wall of the heat insulator; and heating the heat generating body to heat the substrate in the processing chamber The process for performing the treatment; at least when the heat generating body is at room temperature, the distance between the heat generating body and the inner wall of the heat insulator is set to increase as moving away from the fixed portion.
1．．．晶圓(基板)1. . . Wafer (substrate)
11．．．處理管11. . . Processing tube
12．．．外管12. . . Outer tube
13．．．內管13. . . Inner tube
14．．．處理室14. . . Processing room
15．．．爐口15. . . Mouth
16．．．岐管16. . . Fistula
17．．．排氣管17. . . exhaust pipe
17a．．．壓力感測器17a. . . Pressure sensor
17b．．．APC閥17b. . . APC valve
17c．．．真空排氣裝置17c. . . Vacuum exhaust
18．．．排氣通道18. . . Exhaust passage
20．．．密封蓋20. . . Sealing cap
21．．．晶舟昇降器twenty one. . . Crystal boat lifter
22．．．晶舟twenty two. . . Crystal boat
23．．．氣體導入管twenty three. . . Gas introduction tube
23a．．．原料氣體供給裝置23a. . . Raw material gas supply device
23b．．．運載氣體供給裝置23b. . . Carrier gas supply device
24．．．溫度感測器twenty four. . . Temperature sensor
25．．．旋轉機構25. . . Rotating mechanism
30．．．加熱單元(加熱裝置)30. . . Heating unit (heating device)
31．．．外殼31. . . shell
32．．．間隙32. . . gap
33．．．隔熱體33. . . Insulation
34．．．頂壁部34. . . Top wall
35．．．側壁部35. . . Side wall
40．．．收容部40. . . Containment department
40d．．．收容部之兩側壁40d. . . Two side walls of the housing
40e．．．收容部之底面40e. . . Underside of the accommodating part
41,41'．．．保持體41,41'. . . Hold body
42．．．發熱體42. . . heating stuff
42R,42R'．．．環狀部42R, 42R'. . . Ring
42a,42a'．．．山峰部42a, 42a'. . . Mountain peak
42b,42b'．．．山谷部42b, 42b'. . . Valley department
42c．．．保持體承受部42c. . . Holder body
45,46．．．供電部45,46. . . Power supply department
45d,46d．．．虛擬端子45d, 46d. . . Virtual terminal
280．．．控制器280. . . Controller
第1圖為本發明之第1實施形態的基板處理裝置之垂直剖視圖。Fig. 1 is a vertical sectional view showing a substrate processing apparatus according to a first embodiment of the present invention.
第2圖為本發明之第1實施形態的加熱單元之立體圖。Fig. 2 is a perspective view of a heating unit according to a first embodiment of the present invention.
第3圖為本發明之第1實施形態的加熱單元之局部放大圖。Fig. 3 is a partially enlarged view of the heating unit according to the first embodiment of the present invention.
第4(a)圖為例示構成本發明之第1實施形態的環狀部之線狀材料的示意圖，第4(b)圖為例示構成該環狀部之板狀材料的示意圖。Fig. 4(a) is a schematic view showing a linear material constituting the annular portion according to the first embodiment of the present invention, and Fig. 4(b) is a schematic view showing a plate-like material constituting the annular portion.
第5(a)圖為本發明之第1實施形態的環狀部之局部放大圖，第5(b)圖為放大部分之側視圖。Fig. 5(a) is a partially enlarged view of the annular portion according to the first embodiment of the present invention, and Fig. 5(b) is a side view showing an enlarged portion.
第6圖為本發明之第1實施形態在昇溫前之加熱單元的水平剖視圖。Figure 6 is a horizontal cross-sectional view of the heating unit before temperature rise in the first embodiment of the present invention.
第7圖為本發明之第1實施形態在昇溫後之加熱單元的水平剖視圖。Figure 7 is a horizontal cross-sectional view of the heating unit after the temperature rise in the first embodiment of the present invention.
第8圖為顯示環狀部之膨脹方向的示意圖。Fig. 8 is a schematic view showing the direction in which the annular portion expands.
第9圖為顯示與環狀部之熱膨脹相關的測量結果之示意圖。Fig. 9 is a view showing measurement results relating to thermal expansion of the annular portion.
第10(a)圖為本發明之第2實施形態的虛擬端子周邊之局部放大圖，第10(b)圖為放大部分之側視圖。Fig. 10(a) is a partially enlarged view showing the vicinity of a virtual terminal according to a second embodiment of the present invention, and Fig. 10(b) is a side view showing an enlarged portion.
第11(a)圖為作為本發明之固定部的變化例之銷構件周邊之局部放大圖，第11(b)圖為放大部分之側視圖。Fig. 11(a) is a partially enlarged view showing the periphery of a pin member as a modification of the fixing portion of the present invention, and Fig. 11(b) is a side view showing an enlarged portion.
第12圖為本發明之第3實施形態在昇溫前之加熱單元的水平剖視圖。Figure 12 is a horizontal cross-sectional view of the heating unit before temperature rise in the third embodiment of the present invention.
第13圖為本發明之第3實施形態在昇溫後之加熱單元的水平剖視圖。Figure 13 is a horizontal cross-sectional view of the heating unit after the temperature rise in the third embodiment of the present invention.
第14圖為顯示本發明之第3實施形態的發熱體之膨脹方向的示意圖。Fig. 14 is a schematic view showing the direction of expansion of the heat generating body according to the third embodiment of the present invention.
第15圖為顯示與本發明之第3實施形態的發熱體之熱膨脹相關的測量結果之示意圖。Fig. 15 is a view showing the measurement results relating to thermal expansion of the heat generating body according to the third embodiment of the present invention.
第16圖為顯示在室溫狀態下發熱體與隔熱體成為同心圓狀時之發熱體的熱變形之狀態的示意圖，第16(a)圖顯示昇溫前之狀態，第16(b)圖顯示昇溫後之狀態。Fig. 16 is a view showing a state of thermal deformation of the heating element when the heating element and the heat insulator are concentric in a room temperature state, and Fig. 16(a) shows a state before temperature rise, and Fig. 16(b) The status after the temperature rise is displayed.
第17圖為顯示不具備保持體承受部之環狀部的熱變形的狀態之局部放大圖，第17(a)圖顯示昇溫前之狀態，第17(b)圖顯示昇溫後之狀態，第17(c)圖顯示因熱變形而產生保持體之剪斷、環狀部之破裂、環狀部之短路的狀態，第17(d)圖顯示因熱變形而產生保持體之脫落的狀態。Fig. 17 is a partially enlarged view showing a state in which the annular portion of the holding body receiving portion is not thermally deformed, wherein Fig. 17(a) shows the state before the temperature rise, and Fig. 17(b) shows the state after the temperature rise, 17(c) shows a state in which shearing of the holding body, rupture of the annular portion, and short-circuiting of the annular portion due to thermal deformation, and Fig. 17(d) shows a state in which the retaining body is detached due to thermal deformation.
第18圖為顯示本發明之第1實施形態的發熱體之熱變形的狀態之示意圖，第18(a)圖顯示昇溫前之狀態，第18(b)圖顯示昇溫後之狀態。Fig. 18 is a view showing a state of thermal deformation of the heat generating body according to the first embodiment of the present invention, wherein Fig. 18(a) shows a state before temperature rise, and Fig. 18(b) shows a state after temperature rise.
第19(a)圖為本發明之第1實施形態的環狀部之局部放大圖，第19(b)圖為放大部分之側視圖。Fig. 19(a) is a partially enlarged view of the annular portion according to the first embodiment of the present invention, and Fig. 19(b) is a side view showing an enlarged portion.
第20圖為例示不具備保持體承受部之環狀部內的電流路徑之示意圖。Fig. 20 is a schematic view showing a current path in the annular portion which does not have the holder receiving portion.
第21圖為例示本發明之第1實施形態的發熱體內的電流路徑之示意圖。Fig. 21 is a schematic view showing a current path in the heat generating body according to the first embodiment of the present invention.
第22(a)圖為本發明之第1實施形態的變化例之環狀部之局部放大圖，第22(b)圖為放大部分之側視圖。Fig. 22(a) is a partial enlarged view of an annular portion according to a modification of the first embodiment of the present invention, and Fig. 22(b) is a side view showing an enlarged portion.
第23(a)圖為本發明之第1實施形態的變化例之加熱單元之局部放大圖，第23(b)圖為以符號A1表示之區域中的環狀部之局部放大圖，第23(c)圖為以符號A2表示之區域中的環狀部之局部放大圖。Fig. 23(a) is a partially enlarged view of a heating unit according to a modification of the first embodiment of the present invention, and Fig. 23(b) is a partially enlarged view of the annular portion in a region indicated by a symbol A1, and 23rd (c) The figure is a partially enlarged view of the annular portion in the region indicated by the symbol A2.
第24(a)圖為本發明之第1實施形態的變化例之加熱單元之局部放大圖，第24(b)圖為以符號A3表示之區域中的環狀部之局部放大圖，第24(c)圖為以符號A4表示之區域中的環狀部之局部放大圖，第24(d)圖為以符號A5表示之區域中的環狀部之局部放大圖。Fig. 24(a) is a partially enlarged view of a heating unit according to a modification of the first embodiment of the present invention, and Fig. 24(b) is a partially enlarged view of the annular portion in a region indicated by symbol A3, (c) is a partially enlarged view of the annular portion in the region indicated by the symbol A4, and Fig. 24(d) is a partially enlarged view of the annular portion in the region indicated by the symbol A5.
第25圖為本發明之第2實施形態的基板處理裝置之垂直剖視圖。Figure 25 is a vertical sectional view showing a substrate processing apparatus according to a second embodiment of the present invention.
第26圖為本發明之第2實施形態的發熱體之立體圖。Figure 26 is a perspective view of a heat generating body according to a second embodiment of the present invention.
第27(a)圖為本發明之第2實施形態的環狀部之局部放大圖，第27(b)圖為放大部分之側視圖。Fig. 27(a) is a partially enlarged view of the annular portion according to the second embodiment of the present invention, and Fig. 27(b) is a side view showing an enlarged portion.
第28圖為保持本發明之第2實施形態的環狀部之隔熱體之局部放大圖，第28(a)圖顯示昇溫前之狀態，第28(b)圖顯示昇溫後之狀態。Fig. 28 is a partially enlarged view showing the heat insulator of the annular portion according to the second embodiment of the present invention, wherein Fig. 28(a) shows the state before the temperature rise, and Fig. 28(b) shows the state after the temperature rise.
第29圖為顯示本發明之第2實施形態的收容部之變化例之示意圖，第29(a)圖為收容環狀部之收容部的局部放大圖，第29(b)圖為放大部分之側視圖。Fig. 29 is a schematic view showing a modification of the accommodating portion according to the second embodiment of the present invention, wherein Fig. 29(a) is a partially enlarged view of the accommodating portion accommodating the annular portion, and Fig. 29(b) is an enlarged portion. Side view.
33．．．隔熱體33. . . Insulation
35．．．側壁部35. . . Side wall
42．．．發熱體42. . . heating stuff
42a．．．山峰部42a. . . Mountain peak
42b．．．山谷部42b. . . Valley department
42R．．．環狀部42R. . . Ring
45、46．．．供電部45, 46. . . Power supply department
Claims (8)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009169938A JP5544121B2 (en) | 2009-07-21 | 2009-07-21 | Heating apparatus, substrate processing apparatus, and semiconductor device manufacturing method |
| JP2010145457A JP5529646B2 (en) | 2010-06-25 | 2010-06-25 | Heating apparatus, substrate processing apparatus, substrate processing method, and semiconductor device manufacturing method |
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| TW201117300A TW201117300A (en) | 2011-05-16 |
| TWI423339B true TWI423339B (en) | 2014-01-11 |
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| KR (1) | KR101096602B1 (en) |
| CN (2) | CN101964303B (en) |
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| JP5980551B2 (en) * | 2011-07-13 | 2016-08-31 | 株式会社日立国際電気 | Temperature detector, substrate processing apparatus, and semiconductor device manufacturing method |
| TWI779227B (en) * | 2019-08-02 | 2022-10-01 | 日商信和發瑞斯股份有限公司 | A coil-type heating structure |
| CN112652532A (en) * | 2020-12-22 | 2021-04-13 | 长江存储科技有限责任公司 | Method for forming semiconductor structure |
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| US5911825A (en) * | 1997-09-30 | 1999-06-15 | Seh America, Inc. | Low oxygen heater |
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| JPS61134271A (en) * | 1984-12-05 | 1986-06-21 | Oki Electric Ind Co Ltd | Thermal head |
| JP3648513B2 (en) * | 1999-10-29 | 2005-05-18 | タクミ・エー・エル株式会社 | High-speed response heater unit, plate heater, and plate heater manufacturing method |
| AU2002368383A1 (en) * | 2002-11-25 | 2004-06-18 | Koyo Thermo Systems Co., Ltd. | Electric heater for semiconductor processing apparatus |
| JP4885438B2 (en) * | 2003-10-21 | 2012-02-29 | 株式会社日立国際電気 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING APPARATUS ELECTRIC HEATER, SUBSTRATE PROCESSING APPARATUS PROVIDED WITH THE SAME, HOLDER STRUCTURE HOLDING STRUCTURE AND SUBSTRATE PROCESSING APPARATUS |
| JP4907937B2 (en) * | 2005-09-26 | 2012-04-04 | 株式会社日立国際電気 | Thermal insulation wall, heating element holding structure, heating device and substrate processing apparatus |
| JP5248826B2 (en) * | 2006-09-22 | 2013-07-31 | 東京エレクトロン株式会社 | Heat treatment furnace and manufacturing method thereof |
| JP5248874B2 (en) * | 2007-03-20 | 2013-07-31 | 東京エレクトロン株式会社 | Heat treatment furnace and vertical heat treatment equipment |
| JP5544121B2 (en) * | 2009-07-21 | 2014-07-09 | 株式会社日立国際電気 | Heating apparatus, substrate processing apparatus, and semiconductor device manufacturing method |
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2010
- 2010-07-19 KR KR1020100069368A patent/KR101096602B1/en active IP Right Grant
- 2010-07-20 TW TW099123773A patent/TWI423339B/en active
- 2010-07-21 CN CN2010102361453A patent/CN101964303B/en active Active
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| US5187771A (en) * | 1990-11-13 | 1993-02-16 | Tokyo Electron Sagami Limited | Heat processing apparatus utilizing a plurality of stacked heater holders |
| US6125134A (en) * | 1996-10-30 | 2000-09-26 | Kanthal Ab | Electric furnace assembly |
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| US20080205864A1 (en) * | 2007-02-28 | 2008-08-28 | Tokyo Electron Limited | Heat processing furnace and vertical-type heat processing apparatus |
| US20080296282A1 (en) * | 2007-06-01 | 2008-12-04 | Tokyo Electron Limited | Heat processing furnace and method of manufacturing the same |
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| CN102709213B (en) | 2016-02-24 |
| KR101096602B1 (en) | 2011-12-20 |
| CN101964303A (en) | 2011-02-02 |
| KR20110009027A (en) | 2011-01-27 |
| CN101964303B (en) | 2013-10-02 |
| TW201117300A (en) | 2011-05-16 |
| CN102709213A (en) | 2012-10-03 |
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