TWI420713B - Led package and method of manufacturing the same - Google Patents
Led package and method of manufacturing the same Download PDFInfo
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- TWI420713B TWI420713B TW099140472A TW99140472A TWI420713B TW I420713 B TWI420713 B TW I420713B TW 099140472 A TW099140472 A TW 099140472A TW 99140472 A TW99140472 A TW 99140472A TW I420713 B TWI420713 B TW I420713B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
Description
本發明涉及一種半導體發光元件及其製造方法，尤其涉及一種發光二極體封裝結構及其製造方法。 The present invention relates to a semiconductor light emitting device and a method of fabricating the same, and more particularly to a light emitting diode package structure and a method of fabricating the same.
發光二極體(Light Emitting Diode，LED)係一種可將電流轉換成特定波長範圍之光之半導體元件。發光二極體以其亮度高、工作電壓低、功耗小、易與積體電路匹配、驅動簡單、壽命長等優點，從而可作為光源而廣泛應用於照明領域。 A Light Emitting Diode (LED) is a semiconductor component that converts current into light of a specific wavelength range. The light-emitting diode is widely used in the field of illumination because of its high brightness, low operating voltage, low power consumption, easy matching with integrated circuits, simple driving, and long life.
在習知之發光二極體封裝結構中，其金屬電極大都採用銀或銀鎳合金製成，但金屬銀容易被氧化而導致元件功能喪失。 In the conventional light-emitting diode package structure, the metal electrodes are mostly made of silver or silver-nickel alloy, but the metal silver is easily oxidized to cause loss of function of the element.
有鑒於此，有必要提供一種防止金屬電極被氧化之發光二極體封裝結構製造方法。 In view of the above, it is necessary to provide a method of fabricating a light emitting diode package structure that prevents oxidation of a metal electrode.
一種發光二極體封裝結構製造方法，包括步驟：1)提供一基板，該基板上形成有多對電極，每對電極之間形成與電極相互絕緣之反射部；2)提供多個絕緣層，每一絕緣層蓋在相應之反射部上； 3)在電極上電鍍有防氧化層；4)放置發光二極體晶片在每一絕緣層上，並藉由導線將發光二極體晶片與相應之防氧化層電連接；5)形成多個相互間隔之封裝體，每一封裝體覆蓋一對電極上之防氧化層及該對電極之間之絕緣層上，並將相應之發光二極體晶片與導線包裹，從而在基板上形成多個發光二極體封裝結構；6)將多個發光二極體封裝結構彼此分離。 A method for manufacturing a light emitting diode package structure, comprising the steps of: 1) providing a substrate on which a plurality of pairs of electrodes are formed, each of which forms a reflecting portion insulated from the electrodes; 2) providing a plurality of insulating layers, Each insulating layer is covered on the corresponding reflective portion; 3) electroplating an anti-oxidation layer on the electrode; 4) placing a light-emitting diode wafer on each of the insulating layers, and electrically connecting the light-emitting diode wafer to the corresponding anti-oxidation layer by wires; 5) forming a plurality of a mutually spaced package, each package covering an anti-oxidation layer on a pair of electrodes and an insulating layer between the pair of electrodes, and wrapping the corresponding LED wafer with the wire to form a plurality of substrates a light emitting diode package structure; 6) separating a plurality of light emitting diode package structures from each other.
在第一電連接部和第二電連接部(即電極)上形成防氧化層，有效防止第一電連接部和第二電連接部被氧化，從而保證了發光二極體封裝結構正常工作。 An oxidation preventing layer is formed on the first electrical connection portion and the second electrical connection portion (ie, the electrode) to effectively prevent the first electrical connection portion and the second electrical connection portion from being oxidized, thereby ensuring normal operation of the light emitting diode package structure.
10‧‧‧基板 10‧‧‧Substrate
11‧‧‧第一電連接部 11‧‧‧First electrical connection
12‧‧‧第二電連接部 12‧‧‧Second electrical connection
13、13a‧‧‧反射部 13, 13a‧‧‧Reflection Department
14‧‧‧絕緣層 14‧‧‧Insulation
15、15b‧‧‧防氧化層 15, 15b‧‧‧Anti-oxidation layer
16‧‧‧發光二極體晶片 16‧‧‧Light Emitter Wafer
17‧‧‧封裝體 17‧‧‧Package
18‧‧‧導線 18‧‧‧Wire
101‧‧‧第一表面 101‧‧‧ first surface
102‧‧‧第二表面 102‧‧‧ second surface
圖1係本發明第一實施例之發光二極體封裝結構之截面示意圖。 1 is a schematic cross-sectional view showing a light emitting diode package structure according to a first embodiment of the present invention.
圖2係本發明第二實施例之發光二極體封裝結構之截面示意圖。 2 is a schematic cross-sectional view showing a light emitting diode package structure according to a second embodiment of the present invention.
圖3係本發明第三實施例之發光二極體封裝結構之截面示意圖。 3 is a schematic cross-sectional view showing a light emitting diode package structure according to a third embodiment of the present invention.
圖4係製造圖1之發光二極體封裝結構之第一個步驟。 Figure 4 is a first step in the fabrication of the LED package of Figure 1.
圖5係製造圖1之發光二極體封裝結構之第二個步驟。 FIG. 5 is a second step of fabricating the LED package structure of FIG. 1.
圖6係製造圖1之發光二極體封裝結構之第三個步驟。 Figure 6 is a third step in the fabrication of the light emitting diode package of Figure 1.
圖7係製造圖1之發光二極體封裝結構之第四個步驟。 Figure 7 is a fourth step in the fabrication of the light emitting diode package of Figure 1.
圖8係製造圖1之發光二極體封裝結構之第五個步驟。 Figure 8 is a fifth step in the fabrication of the light emitting diode package of Figure 1.
以下將結合附圖對本發明作進一步之詳細說明。 The invention will be further described in detail below with reference to the accompanying drawings.
如圖1所示，本發明第一實施例之發光二極體封裝結構包括基板10、貼於基板10上之相互絕緣之第一電連接部11和第二電連接部12、反射部13、包覆反射部13之絕緣層14、形成於第一電連接部11和第二電連接部12之防氧化層15、設置於絕緣層14上之發光二極體晶片16、以及設置於發光二極體晶片16之出光方向上之封裝體17。所述反射部13藉由絕緣層14分別與第一電連接部11和第二電連接部12絕緣。所述發光二極體晶片16藉由打線分別與第一電連接部11和第二電連接部12上之防氧化層15電連接。 As shown in FIG. 1 , the LED package structure of the first embodiment of the present invention includes a substrate 10 , a first electrical connection portion 11 and a second electrical connection portion 12 , and a reflective portion 13 that are adhered to the substrate 10 . An insulating layer 14 covering the reflective portion 13, an oxidation preventing layer 15 formed on the first electrical connecting portion 11 and the second electrical connecting portion 12, a light emitting diode wafer 16 disposed on the insulating layer 14, and a light emitting diode The package body 17 in the light outgoing direction of the polar body wafer 16. The reflection portion 13 is insulated from the first electrical connection portion 11 and the second electrical connection portion 12 by the insulating layer 14, respectively. The light emitting diode chip 16 is electrically connected to the oxidation preventing layer 15 on the first electrical connection portion 11 and the second electrical connection portion 12 by wire bonding, respectively.
所述基板10可以係塑膠基板或陶瓷基板如氧化鋁基板、氧化鋅基板或者矽基板等。該基板10呈平板狀，其具有一第一表面101以及與其相對之第二表面102。第一電連接部11之一端形成於該基板10之第一表面101上，其另一端延伸至該基板10之第二表面102。第二電連接部12之一端形成於該基板10之第一表面101上，其另一端延伸至該基板10之第二表面102。該第一電連接部11和第二電連接部12係一金屬層，該金屬層可以係銀、銀鎳合金或其他導電金屬。 The substrate 10 may be a plastic substrate or a ceramic substrate such as an alumina substrate, a zinc oxide substrate or a germanium substrate. The substrate 10 has a flat shape with a first surface 101 and a second surface 102 opposite thereto. One end of the first electrical connection portion 11 is formed on the first surface 101 of the substrate 10, and the other end thereof extends to the second surface 102 of the substrate 10. One end of the second electrical connection portion 12 is formed on the first surface 101 of the substrate 10, and the other end thereof extends to the second surface 102 of the substrate 10. The first electrical connection portion 11 and the second electrical connection portion 12 are a metal layer, which may be silver, silver-nickel alloy or other conductive metal.
所述反射部13與第一電連接部11和第二電連接部12相互絕緣。在第一實施例中，該反射部13僅貼設於所述基板10之第一表面101上。該反射部13可係其他結構，如圖2所示之結構，該反射部13a自基板10之第一表面101延伸至基板10之第二表面102上，以增加熱傳導。在第一、第二實施例中，反射部13、13a係一金屬層，該金屬層可以係銀、銀鎳合金或其他導電金屬。 The reflection portion 13 is insulated from the first electrical connection portion 11 and the second electrical connection portion 12. In the first embodiment, the reflecting portion 13 is only attached to the first surface 101 of the substrate 10. The reflecting portion 13 can be of other structure, as shown in FIG. 2, which extends from the first surface 101 of the substrate 10 to the second surface 102 of the substrate 10 to increase heat conduction. In the first and second embodiments, the reflecting portions 13, 13a are a metal layer which may be silver, silver-nickel alloy or other conductive metal.
在第一實施例中，所述絕緣層14覆蓋於所述反射部13之頂面和週邊側面，以防止反射部13被氧化。該絕緣層14係透明之材質，例如SiO2。在第一實施例中，該絕緣層14之側部剛好填充反射部13與第一電連接部11和第二電連接部12之間之空隙。在其他實施例中，該絕緣層14只要包裹好反射部13即可。 In the first embodiment, the insulating layer 14 covers the top surface and the peripheral side surface of the reflection portion 13 to prevent the reflection portion 13 from being oxidized. The insulating layer 14 is made of a transparent material such as SiO2. In the first embodiment, the side of the insulating layer 14 just fills the gap between the reflecting portion 13 and the first electrical connection portion 11 and the second electrical connection portion 12. In other embodiments, the insulating layer 14 is only required to wrap the reflective portion 13.
所述防氧化層15分別覆蓋於所述第一電連接部11和第二電連接部12，以防止第一電連接部11和第二電連接部12被氧化。該防氧化層15可藉由電鍍之方法形成於第一電連接部11和第二電連接部12上。該防氧化層15係不易氧化之金屬層，例如Au(金)層。防氧化層15b可同時覆蓋位於所述基板10之第二表面102上之第一電連接部11和第二電連接部12，如圖3所示。 The oxidation preventing layer 15 covers the first electrical connection portion 11 and the second electrical connection portion 12, respectively, to prevent the first electrical connection portion 11 and the second electrical connection portion 12 from being oxidized. The oxidation preventing layer 15 can be formed on the first electrical connection portion 11 and the second electrical connection portion 12 by electroplating. The oxidation preventing layer 15 is a metal layer that is not easily oxidized, such as an Au (gold) layer. The oxidation preventing layer 15b can simultaneously cover the first electrical connection portion 11 and the second electrical connection portion 12 on the second surface 102 of the substrate 10, as shown in FIG.
在第一實施例中，所述發光二極體晶片16貼於所述絕緣層14之頂面，並藉由打線分別與覆蓋於第一電連接部11和第二電連接部12上之防氧化層15電連接，使得發光二極體晶片16藉由導線18和防氧化層15分別與第一電連接部11和第二電連接部12電連接。該防氧化層15不僅可以防止第一電連接部11和第二電連接部12氧化，而且可以增加熱應力避免導線18受熱時斷裂。 In the first embodiment, the LED wafer 16 is attached to the top surface of the insulating layer 14 and is covered by the wire and the first electrical connection portion 11 and the second electrical connection portion 12 respectively. The oxide layer 15 is electrically connected such that the light emitting diode chip 16 is electrically connected to the first electrical connection portion 11 and the second electrical connection portion 12 by the wire 18 and the oxidation preventing layer 15, respectively. The oxidation preventing layer 15 can prevent not only oxidation of the first electrical connection portion 11 and the second electrical connection portion 12 but also increase of thermal stress to prevent the wire 18 from being broken when heated.
所述封裝體17覆蓋所述防氧化層15與所述絕緣層14上，並將發光二極體晶片16與導線18包裹。該封裝體17係摻雜有螢光粉之封裝樹脂。在本實施例中，該封裝體17之兩側分別與第一電連接部11和第二電連接部12之側部平齊。發光二極體晶片16發出光線，透過封裝體17射出。發光二極體晶片16發出之光線激發螢光粉產生波長不同之光線，該二種光線在封裝體17內充分混光後射出。所 述反射部13反射發光二極體晶片16發出之光線。 The package body 17 covers the oxidation preventing layer 15 and the insulating layer 14, and wraps the LED wafer 16 with the wires 18. The package 17 is an encapsulating resin doped with phosphor powder. In this embodiment, the two sides of the package body 17 are flush with the sides of the first electrical connection portion 11 and the second electrical connection portion 12, respectively. The LED wafer 16 emits light and is emitted through the package 17. The light emitted by the LED wafer 16 excites the phosphor to produce light of different wavelengths, and the two kinds of light are sufficiently mixed in the package 17 to be emitted. Place The reflecting portion 13 reflects the light emitted from the LED wafer 16.
圖4至圖8示出了製造本發明第一實施例之發光二極體封裝結構之方法，包括如下步驟： 4 to 8 illustrate a method of fabricating a light emitting diode package structure according to a first embodiment of the present invention, including the following steps:
步驟1，如圖4所示，提供一基板10，在基板10之第一表面101上鍍上一層反射部13，並由第一表面101延伸至基板10之第二表面102鍍上之第一電連接部11和第二電連接部12。第一電連接部11和第二電連接部12即係發光二極體封裝結構之一對電極。假設反射部13、第一電連接部11和第二電連接部12係一組，該基板10上形成多組，在後續步驟中，在一個基板10上形成多個發光二極體封裝結構。步驟2至步驟5中以其中一個發光二極體封裝結構為例進行說明，其他實施例之發光二極體封裝結構之製造方法同理。 Step 1, as shown in FIG. 4, a substrate 10 is provided, and a reflective portion 13 is plated on the first surface 101 of the substrate 10, and is firstly plated by the first surface 101 to the second surface 102 of the substrate 10. The electrical connection portion 11 and the second electrical connection portion 12. The first electrical connection portion 11 and the second electrical connection portion 12 are a pair of electrodes of the light emitting diode package structure. Assuming that the reflection portion 13, the first electrical connection portion 11, and the second electrical connection portion 12 are one set, a plurality of groups are formed on the substrate 10. In the subsequent step, a plurality of light emitting diode package structures are formed on one substrate 10. Steps 2 to 5 are described by taking one of the light emitting diode package structures as an example. The manufacturing method of the light emitting diode package structure of other embodiments is the same.
步驟2，如圖5所示，預先製作一絕緣層14，並將該絕緣層14蓋在反射部13上。絕緣層14可增加反射效果，也防止反射部13氧化。 Step 2, as shown in FIG. 5, an insulating layer 14 is prepared in advance, and the insulating layer 14 is placed on the reflecting portion 13. The insulating layer 14 can increase the reflection effect and also prevent the reflection portion 13 from being oxidized.
步驟3，如圖6所示，利用電鍍技術覆蓋一層防氧化層15在位於所述基板10之第一表面101上之第一電連接部11和第二電連接部12上，所述防氧化層15之頂面與絕緣層14之頂面平齊。 Step 3, as shown in FIG. 6, covering an anti-oxidation layer 15 on the first electrical connection portion 11 and the second electrical connection portion 12 on the first surface 101 of the substrate 10 by using an electroplating technique, the oxidation prevention The top surface of layer 15 is flush with the top surface of insulating layer 14.
步驟4，如圖7所示，放置發光二極體晶片16在所述絕緣層14上，並藉由導線18將發光二極體晶片16與防氧化層15電連接。 Step 4, as shown in FIG. 7, a light-emitting diode wafer 16 is placed on the insulating layer 14, and the light-emitting diode wafer 16 is electrically connected to the oxidation preventing layer 15 by wires 18.
步驟5，如圖8所示，形成一封裝體17，該封裝體17覆蓋所述防氧化層15與所述絕緣層14上，並將發光二極體晶片16與導線18包裹。 Step 5, as shown in FIG. 8, a package body 17 is formed. The package body 17 covers the oxidation preventing layer 15 and the insulating layer 14, and the LED array 16 and the wire 18 are wrapped.
步驟6，藉由上述步驟形成之多個發光二極體封裝結構彼此分離。在本實施例中，採用蝕刻方式分離。 In step 6, the plurality of light emitting diode package structures formed by the above steps are separated from each other. In this embodiment, separation is performed by etching.
製造本發明第二實施例之發光二極體封裝結構之方法與第一實施例之大致相同，不同之處在於：第二實施例之反射部13a自基板10之第一表面101延伸至基板10之第二表面102上。可以理解地，在第二實施例中，防氧化層15也可以同時形成於位於所述基板10之第二表面102上之第一電連接部11和第二電連接部12上。 The method of manufacturing the light emitting diode package structure of the second embodiment of the present invention is substantially the same as that of the first embodiment, except that the reflection portion 13a of the second embodiment extends from the first surface 101 of the substrate 10 to the substrate 10. On the second surface 102. It can be understood that, in the second embodiment, the oxidation preventing layer 15 can also be simultaneously formed on the first electrical connection portion 11 and the second electrical connection portion 12 on the second surface 102 of the substrate 10.
製造本發明第三實施例之發光二極體封裝結構之方法與第一實施例之大致相同，不同之處在於：防氧化層15b同時覆蓋位於所述基板10之第二表面102上之第一電連接部11和第二電連接部12上。可以理解地，在第三實施例中，反射部13可以自基板10之第一表面101延伸至基板10之第二表面102上。 The method for fabricating the light emitting diode package structure of the third embodiment of the present invention is substantially the same as that of the first embodiment, except that the oxidation preventing layer 15b covers the first surface 102 of the substrate 10 at the same time. The electrical connection portion 11 and the second electrical connection portion 12 are provided. It will be appreciated that in the third embodiment, the reflective portion 13 may extend from the first surface 101 of the substrate 10 to the second surface 102 of the substrate 10.
綜上所述，利用選鍍之技術在第一電連接部11和第二電連接部12上形成防氧化層15(15b)，有效防止第一電連接部11和第二電連接部12被氧化，從而保證了發光二極體封裝結構正常工作。 In summary, the oxidation preventing layer 15 (15b) is formed on the first electrical connection portion 11 and the second electrical connection portion 12 by means of a plating technique, thereby effectively preventing the first electrical connection portion 11 and the second electrical connection portion 12 from being Oxidation ensures the normal operation of the LED package structure.
另外，在發光二極體晶片16之下面形成有反射部13與絕緣層14，使得所述基板10之表面形成調光結構，以將發光二極體晶片16發出之光線聚集向發光二極體晶片16之上方。 In addition, a reflective portion 13 and an insulating layer 14 are formed under the LED array 16 such that the surface of the substrate 10 forms a dimming structure to concentrate the light emitted from the LED wafer 16 toward the LED. Above the wafer 16.
應該指出，上述實施方式僅為本發明之較佳實施方式，本領域技術人員還可在本發明精神內做其他變化。依據本發明精神所做之變化，都應包含在本發明所要求保護之範圍之內。 It should be noted that the above-described embodiments are merely preferred embodiments of the present invention, and those skilled in the art may make other changes within the spirit of the present invention. Variations made in accordance with the spirit of the invention are intended to be included within the scope of the invention as claimed.
10‧‧‧基板 10‧‧‧Substrate
11‧‧‧第一電連接部 11‧‧‧First electrical connection
12‧‧‧第二電連接部 12‧‧‧Second electrical connection
13‧‧‧反射部 13‧‧‧Reflection Department
14‧‧‧絕緣層 14‧‧‧Insulation
15‧‧‧防氧化層 15‧‧‧Anti-oxidation layer
16‧‧‧發光二極體晶片 16‧‧‧Light Emitter Wafer
17‧‧‧封裝體 17‧‧‧Package
18‧‧‧導線 18‧‧‧Wire
101‧‧‧第一表面 101‧‧‧ first surface
102‧‧‧第二表面 102‧‧‧ second surface
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| TW099140472A TWI420713B (en) | 2010-11-24 | 2010-11-24 | Led package and method of manufacturing the same |
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| CN104064662A (en) * | 2013-03-21 | 2014-09-24 | 展晶科技(深圳)有限公司 | Light-emitting-diode packaging structure |
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| TW565955B (en) * | 2002-10-25 | 2003-12-11 | Advanced Optoelectronic Tech | Sub-mount for light emitting diode |
| US20100001395A1 (en) * | 2008-03-25 | 2010-01-07 | Bridge Semiconductor Corporation | Semiconductor chip assembly with post/base heat spreader and vertical signal routing |
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| US20100001395A1 (en) * | 2008-03-25 | 2010-01-07 | Bridge Semiconductor Corporation | Semiconductor chip assembly with post/base heat spreader and vertical signal routing |
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