TWI419201B - Patterning method - Google Patents
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Description
本發明是有關於一種半導體製程方法，且特別是有關於一種圖案化的方法。This invention relates to a semiconductor process, and more particularly to a method of patterning.
隨著記憶體元件之積集度的日益提升，記憶體元件之尺寸亦隨之縮小。因此，通道區之長度也逐漸縮短，以增加元件之操作速度。然而，當通道區之長度縮短至一定程度之後，則會產生短通道效應(short channel effects)，進而導致元件的效能降低。As the integration of memory components increases, the size of memory components also shrinks. Therefore, the length of the channel region is also gradually shortened to increase the operating speed of the component. However, when the length of the channel region is shortened to a certain extent, short channel effects are generated, which in turn leads to a decrease in the performance of the component.
在非揮發性記憶體元件中，由於通道區位於字元線的下方，為了增加通道區之長度，習知的一種做法是利用維持間距(pitch)不變，但增加字元線之線寬(或減少字元線間之間距)的方式，以在維持元件密度的情況下避免短通道效應。然而，字元線之線寬受到微影製程之曝光極限尺寸的限制。舉例來說，形成字元線的方法是先在基底上形成導體層，然後，在導體層上形成圖案化光阻層。圖案化光阻層具有開口，且覆蓋欲形成字元線的部分導體層。當欲形成之字元線太寬時，圖案化光阻層的開口變小，因此會有光阻殘留(scum)於開口的現象。如此一來，製程裕度(process window)非常有限。有鑑於此，如何製作較寬的字元線，且同時避免因製程裕度狹窄而造成之光阻殘留的現象，已成為目前業界相當重視的課題之一。In the non-volatile memory component, since the channel region is located below the word line, in order to increase the length of the channel region, a conventional method is to use the sustain pitch to be constant, but increase the line width of the word line ( Or reduce the distance between word lines) to avoid short channel effects while maintaining component density. However, the line width of the word line is limited by the exposure limit size of the lithography process. For example, a method of forming a word line is to first form a conductor layer on a substrate, and then form a patterned photoresist layer on the conductor layer. The patterned photoresist layer has an opening and covers a portion of the conductor layer where the word line is to be formed. When the word line to be formed is too wide, the opening of the patterned photoresist layer becomes small, so that a photoresist is scum to the opening. As a result, the process window is very limited. In view of this, how to make a wider word line and at the same time avoid the phenomenon of photoresist residue caused by narrow process margin has become one of the topics that the industry has paid much attention to.
本發明提供一種製程裕度較寬之圖案化的方法，可以在維持元件密度的情況下，用現有的機台製造較寬的線寬或較小的開口。The present invention provides a method of patterning with a wide process margin, which can be used to fabricate wider line widths or smaller openings with existing machines while maintaining component density.
本發明提供一種圖案化的方法。首先，在基底上形成材料層。然後，在材料層上形成灰化層。接著，在灰化層上形成圖案化轉移層，其中圖案化轉移層具有小於曝光極限尺寸的關鍵尺寸。之後，以圖案化轉移層或圖案化轉移層之補償層為罩幕，來圖案化灰化層，以形成圖案化灰化層。繼之，以圖案化灰化層為罩幕，來圖案化材料層。在形成圖案化轉移層的步驟中，可以進行至少一次的削減製程或至少一次的聚合物沉積製程以減少開口寬度。The present invention provides a method of patterning. First, a layer of material is formed on the substrate. Then, an ash layer is formed on the material layer. Next, a patterned transfer layer is formed on the ashing layer, wherein the patterned transfer layer has a critical dimension that is less than the exposure limit size. Thereafter, the ashing layer is patterned with the patterned transfer layer or the compensation layer of the patterned transfer layer as a mask to form a patterned ash layer. Following this, the patterned ash layer is used as a mask to pattern the material layer. In the step of forming the patterned transfer layer, at least one reduction process or at least one polymer deposition process may be performed to reduce the opening width.
綜上所述，本發明提供之圖案化的方法可以在維持元件密度的情況下製作較寬的字元線，避免短通道效應，提升元件的效能。另外，此方法可應用到製作較小的接觸窗或介層窗，在不需更動現行設備及光阻的情況下，提高圖案密度高達兩倍。此外，本發明提供之圖案化的方法可以製作自對準之雙鑲嵌開口，其製程裕度大且可以輕易達到雙鑲嵌開口之疊對規格。In summary, the present invention provides a method of patterning that can produce wider word lines while maintaining component density, avoiding short channel effects and improving component performance. In addition, this method can be applied to make smaller contact windows or vias, increasing the pattern density by up to two times without changing the current equipment and photoresist. In addition, the patterning method provided by the present invention can produce a self-aligned dual damascene opening with a large process margin and can easily reach the stacking specification of the dual damascene opening.
為讓本發明之上述特徵和優點能更明顯易懂，下文特舉較佳實施例，並配合所附圖式，作詳細說明如下。The above described features and advantages of the present invention will be more apparent from the following description.
圖1A到1I是根據本發明之第一實施例所繪示之圖案化方法的剖面示意圖。1A through 1I are schematic cross-sectional views showing a patterning method according to a first embodiment of the present invention.
首先，請參照圖1A，在基底100上依序形成材料層102、灰化層(ashable layer)104、轉移層106及圖案化光阻層108。基底100例如是矽基底。材料層102的材料例如是導體材料，如金屬、多晶矽(polysilicon)、多晶矽化金屬(polycide)或金屬矽化物(metal silicide)。在此實施例中，材料層102的材料例如是多晶矽，其厚度例如是約800埃。灰化層104為非感光層(non-photosensitive layer)，其材料例如是非晶碳(amorphous carbon；α-C)，且其厚度例如是約1500埃。轉移層106的材料例如是氧化矽或氮氧化矽。在此實施例中，轉移層106的材料例如是氧化矽，其厚度例如是約500埃。另外，材料層102、灰化層104及轉移層106的形成方法包括進行化學氣相沉積製程。圖案化光阻層108之線寬為W1，W1例如是等於曝光極限尺寸(exposure limit dimension)。此外，可選擇性地在材料層102形成之前，先在基底100上形成介電層101。介電層101例如是氧化矽層或是氧化矽/氮化矽/氧化矽(ONO)層，且其形成方法包括進行化學氣相沉積製程。First, referring to FIG. 1A, a material layer 102, an ashable layer 104, a transfer layer 106, and a patterned photoresist layer 108 are sequentially formed on the substrate 100. The substrate 100 is, for example, a crucible substrate. The material of the material layer 102 is, for example, a conductor material such as a metal, a polysilicon, a polycide or a metal silicide. In this embodiment, the material of material layer 102 is, for example, a polysilicon having a thickness of, for example, about 800 angstroms. The ashing layer 104 is a non-photosensitive layer whose material is, for example, amorphous carbon (α-C) and has a thickness of, for example, about 1500 angstroms. The material of the transfer layer 106 is, for example, ruthenium oxide or ruthenium oxynitride. In this embodiment, the material of the transfer layer 106 is, for example, ruthenium oxide having a thickness of, for example, about 500 angstroms. In addition, the method of forming the material layer 102, the ashing layer 104, and the transfer layer 106 includes performing a chemical vapor deposition process. The line width of the patterned photoresist layer 108 is W1, and W1 is, for example, equal to an exposure limit dimension. Additionally, dielectric layer 101 can be formed on substrate 100 prior to formation of material layer 102. The dielectric layer 101 is, for example, a hafnium oxide layer or a hafnium oxide/tantalum nitride/anthracene oxide (ONO) layer, and the method of forming the same includes performing a chemical vapor deposition process.
接著，請參照圖1B，對圖案化光阻層108進行第一削減製程(trimming process)，以形成經削減之圖案化光阻層118。第一削減製程例如是蝕刻製程，所使用的反應氣體包括O2 及CF4 。然後，以經削減之圖案化光阻層118為罩幕，來圖案化轉移層106，以形成圖案化轉移層106a。圖案化轉移層106a的線寬為W2。在此步驟中，W1削減為W2，因為W1等於曝光極限尺寸，因此W2會小於曝光極限尺寸，其中，W2約為W1的90%或更小。圖案化此轉移層106的方法例如是進行蝕刻製程，其使用的反應氣體包括CF4 、CHF3 及A。Next, referring to FIG. 1B, a first trimming process is performed on the patterned photoresist layer 108 to form a patterned patterned photoresist layer 118. The first reduction process is, for example, an etching process, and the reaction gas used includes O 2 and CF 4 . Then, the transferred layer 106 is patterned with the patterned patterned photoresist layer 118 as a mask to form a patterned transfer layer 106a. The line width of the patterned transfer layer 106a is W2. In this step, W1 is reduced to W2 because W1 is equal to the exposure limit size, so W2 will be smaller than the exposure limit size, where W2 is about 90% or less of W1. The method of patterning the transfer layer 106 is, for example, an etching process using reactive gases including CF 4 , CHF 3 and A.
繼之，請參照圖1C，對圖案化轉移層106a進行第二削減製程，以形成圖案化轉移層116a。圖案化轉移層116a的線寬為W3。在此步驟中，W2削減為W3，W3同樣小於曝光極限尺寸。圖1B與1C的步驟可以在同一反應室(chamber)中完成。之後，移除經削減之圖案化光阻層118。特別要說明的是，不管第一削減製程或第二削減製程都可以是選擇性的。也就是說，可以僅藉由第一削減製程或第二削減製程來形成圖案化轉移層116a。Next, referring to FIG. 1C, the patterned transfer layer 106a is subjected to a second reduction process to form a patterned transfer layer 116a. The line width of the patterned transfer layer 116a is W3. In this step, W2 is reduced to W3, and W3 is also smaller than the exposure limit size. The steps of Figures 1B and 1C can be accomplished in the same reaction chamber. Thereafter, the reduced patterned photoresist layer 118 is removed. In particular, the first reduction process or the second reduction process may be optional. That is, the patterned transfer layer 116a can be formed only by the first reduction process or the second reduction process.
如圖1A至1C所示，在基底100上依序形成材料層102及灰化層104。然後，在灰化層104上形成圖案化轉移層116a。As shown in FIGS. 1A to 1C, a material layer 102 and an ash layer 104 are sequentially formed on the substrate 100. Then, a patterned transfer layer 116a is formed on the ash layer 104.
接著，請參照圖1D，形成罩幕層110以覆蓋圖案化轉移層116a。罩幕層110的材料例如是含矽材料如多晶矽，且其形成方法包括進行化學氣相沉積製程。然後，請參照圖1E，移除部份罩幕層110以曝露出圖案化轉移層116a的上表面。剩餘的罩幕層110形成圖案化轉移層116a之補償層(complementary layer)120。換句話說，補償層120是圖案化轉移層116a的反向影像(reverse image)。移除部份罩幕層110的方法包括進行化學機械研磨製程。由於罩幕層110(如多晶矽層)對圖案化轉移層116a(如氧化矽層)的研磨選擇比夠高，例如是介於約100:1到200:1之間，所以此化學機械研磨製程可以準確地停在圖案化轉移層116a的上表面。Next, referring to FIG. 1D, a mask layer 110 is formed to cover the patterned transfer layer 116a. The material of the mask layer 110 is, for example, a germanium-containing material such as polysilicon, and the method of forming the method includes performing a chemical vapor deposition process. Then, referring to FIG. 1E, a portion of the mask layer 110 is removed to expose the upper surface of the patterned transfer layer 116a. The remaining mask layer 110 forms a complementary layer 120 of the patterned transfer layer 116a. In other words, the compensation layer 120 is a reverse image of the patterned transfer layer 116a. The method of removing a portion of the mask layer 110 includes performing a chemical mechanical polishing process. Since the mask layer 110 (such as a polysilicon layer) has a high polishing selection ratio for the patterned transfer layer 116a (such as a hafnium oxide layer), for example, between about 100:1 and 200:1, the chemical mechanical polishing process is performed. It is possible to accurately stop on the upper surface of the patterned transfer layer 116a.
之後，請參照圖1F，移除圖案化轉移層116a，以在補償層120中形成開口111，且開口111的寬度為W3。移除圖案化轉移層116a的方法包括進行乾電漿蝕刻製程。Thereafter, referring to FIG. 1F, the patterned transfer layer 116a is removed to form an opening 111 in the compensation layer 120, and the width of the opening 111 is W3. The method of removing patterned transfer layer 116a includes performing a dry plasma etch process.
繼之，請參照圖1G，以補償層120為罩幕，來圖案化灰化層104，以形成圖案化灰化層104a。圖案化灰化層104a具有開口105，且開口105的寬度為W3。圖案化此灰化層104的方法包括進行蝕刻製程，其使用的反應氣體包括Ar及O2 。由於灰化層104(如非晶碳層)對補償層120(如多晶矽層)的蝕刻選擇比夠高，例如是介於約15:1到35:1之間，所以補償層120的厚度不用太厚，就可以輕易地完成灰化層104的圖案化過程。Next, referring to FIG. 1G, the compensation layer 120 is used as a mask to pattern the ash layer 104 to form a patterned ash layer 104a. The patterned ashing layer 104a has an opening 105, and the opening 105 has a width W3. The method of patterning the ashing layer 104 includes performing an etching process using reactive gases including Ar and O 2 . Since the etch selection ratio of the ashing layer 104 (such as the amorphous carbon layer) to the compensation layer 120 (such as the polysilicon layer) is sufficiently high, for example, between about 15:1 and 35:1, the thickness of the compensation layer 120 is not used. Too thick, the patterning process of the ashing layer 104 can be easily accomplished.
如圖1D至1G所示，以圖案化轉移層116a之補償層120為罩幕，來圖案化灰化層104，以形成圖案化灰化層104a。As shown in FIGS. 1D through 1G, the ashing layer 104 is patterned with the compensation layer 120 of the patterned transfer layer 116a as a mask to form a patterned ashing layer 104a.
接著，請參照圖1H，以圖案化灰化層104a為罩幕，來圖案化材料層102，以形成圖案化材料層102a。圖案化材料層102a具有開口103，且開口103的寬度為W3。圖案化此材料層102的方法包括進行蝕刻製程，其使用的反應氣體包括HBr、CF4 及O2 。材料層102(如多晶矽層)對圖案化灰化層104a(如非晶碳層)的蝕刻選擇比例如是約大於5，舉例來說，介於約5:1到9:1之間。在此實施例中，因為補償層120和材料層102的材料相同，例如均為多晶矽，因此在圖案化此材料層102的過程中，補償層120也會同時被移除，甚至部份的圖案化灰化層104a也會被移除而形成圓角(rounding corner)的現象。此外，圖1G至1H中每一步驟均可視為自對準製程(self-aligned process)，因此補償層120中開口111的寬度與圖案化材料層102a中開口103的寬度相等。也就是說，開口103的寬度為W3。Next, referring to FIG. 1H, the material layer 102 is patterned by patterning the ash layer 104a as a mask to form the patterned material layer 102a. The patterned material layer 102a has an opening 103, and the opening 103 has a width W3. The method of patterning this material layer 102 includes performing an etching process using reactive gases including HBr, CF 4 and O 2 . The etch selectivity ratio of material layer 102 (e.g., polysilicon layer) to patterned ashing layer 104a (e.g., amorphous carbon layer) is, for example, greater than about 5, for example, between about 5:1 and 9:1. In this embodiment, since the materials of the compensation layer 120 and the material layer 102 are the same, for example, all of polysilicon, the compensation layer 120 is also removed at the same time, or even a partial pattern, during the patterning of the material layer 102. The ashing layer 104a is also removed to form a rounding corner. In addition, each of steps 1G through 1H can be considered a self-aligned process, such that the width of the opening 111 in the compensation layer 120 is equal to the width of the opening 103 in the patterned material layer 102a. That is, the width of the opening 103 is W3.
然後，請參照圖11，移除圖案化灰化層104a。移除圖案化灰化層104a的方法包括進行乾蝕刻製程，如氧氣電漿剝除製程。接下來，可以進行濕蝕刻製程以清洗殘留在圖案化材料層102a上的圖案化灰化層104a。Then, referring to FIG. 11, the patterned ashing layer 104a is removed. The method of removing the patterned ashing layer 104a includes performing a dry etch process, such as an oxygen plasma stripping process. Next, a wet etching process may be performed to clean the patterned ash layer 104a remaining on the patterned material layer 102a.
基於上述，在基底100上依序形成材料層102、灰化層104及圖案化轉移層116a。然後，依序轉移圖案化轉移層116a之補償層120的圖案至灰化層104及材料層102。Based on the above, the material layer 102, the ashing layer 104, and the patterned transfer layer 116a are sequentially formed on the substrate 100. Then, the pattern of the compensation layer 120 of the patterned transfer layer 116a is sequentially transferred to the ash layer 104 and the material layer 102.
圖2A到2I是根據本發明之第二實施例所繪示之圖案化方法的剖面示意圖。2A through 2I are schematic cross-sectional views showing a patterning method according to a second embodiment of the present invention.
首先，請參照圖2A，在基底200上依序形成材料層202、灰化層203、轉移層205、另一灰化層207、頂蓋層(cap layer)209及圖案化光阻層208。基底200例如是矽基底。材料層202的材料例如是導體材料。在此實施例中，材料層202的材料例如是多晶矽，其厚度例如是約800埃。灰化層203的材料例如是非晶碳，且其厚度例如是約1500埃。轉移層205的材料例如是氧化矽或氮氧化矽，且其厚度例如是約500埃。灰化層207的材料例如是非晶碳，且其厚度例如是約500埃。頂蓋層209的材料例如是氧化矽或氮氧化矽，且其厚度例如是約300埃。另外，材料層202、灰化層203、轉移層205、灰化層207、頂蓋層209的形成方法包括進行化學氣相沉積製程。圖案化光阻層208之線寬為W1，W1例如是等於曝光極限尺寸。此外，也可以選擇性地在形成材料層202之前，在基底200上形成介電層201。First, referring to FIG. 2A, a material layer 202, an ashing layer 203, a transfer layer 205, another ashing layer 207, a cap layer 209, and a patterned photoresist layer 208 are sequentially formed on the substrate 200. The substrate 200 is, for example, a crucible substrate. The material of material layer 202 is, for example, a conductor material. In this embodiment, the material of material layer 202 is, for example, a polysilicon having a thickness of, for example, about 800 angstroms. The material of the ashing layer 203 is, for example, amorphous carbon, and has a thickness of, for example, about 1500 angstroms. The material of the transfer layer 205 is, for example, ruthenium oxide or ruthenium oxynitride, and its thickness is, for example, about 500 angstroms. The material of the ashing layer 207 is, for example, amorphous carbon, and its thickness is, for example, about 500 angstroms. The material of the cap layer 209 is, for example, cerium oxide or cerium oxynitride, and its thickness is, for example, about 300 angstroms. In addition, the method of forming the material layer 202, the ashing layer 203, the transfer layer 205, the ashing layer 207, and the cap layer 209 includes performing a chemical vapor deposition process. The line width of the patterned photoresist layer 208 is W1, and W1 is, for example, equal to the exposure limit size. Additionally, dielectric layer 201 can also be selectively formed on substrate 200 prior to forming material layer 202.
接著，請參照圖2B，對圖案化光阻層208進行第一削減製程，以形成經削減之圖案化光阻層218。然後，以經削減之圖案化光阻層218為罩幕，依序來圖案化頂蓋層209及灰化層207，以形成圖案化頂蓋層209a及圖案化灰化層207a。圖案化頂蓋層209a及圖案化灰化層207a的線寬為W2，且W2小於曝光極限尺寸。圖案化此頂蓋層209及灰化層207的方法包括進行蝕刻製程，對頂蓋層209所使用的反應氣體包括CF4 及CHF3 ，對灰化層207所使用的反應氣體包括Ar及O2 。Next, referring to FIG. 2B, the patterned photoresist layer 208 is subjected to a first reduction process to form a reduced patterned photoresist layer 218. Then, the capping layer 209 and the ashing layer 207 are sequentially patterned by using the reduced patterned photoresist layer 218 as a mask to form a patterned cap layer 209a and a patterned ashed layer 207a. The line width of the patterned cap layer 209a and the patterned ash layer 207a is W2, and W2 is smaller than the exposure limit size. The method of patterning the cap layer 209 and the ash layer 207 includes performing an etching process, the reaction gases used for the cap layer 209 include CF 4 and CHF 3 , and the reaction gases used for the ash layer 207 include Ar and O. 2 .
之後，請參照圖2C，對圖案化頂蓋層209a及圖案化灰化層207a進行第二削減製程，以形成圖案化頂蓋層219a及圖案化灰化層217a。圖案化頂蓋層219a及圖案化灰化層217a的線寬為W3。此步驟中，W2削減為W3，W3同樣小於曝光極限尺寸。圖2B與2C的步驟可以在同一反應室中完成。繼之，移除經削減之圖案化光阻層218。特別要說明的是，不管第一削減製程或第二削減製程都可以是選擇性的。也就是說，可以僅藉由第一削減製程或第二削減製程來形成圖案化頂蓋層219a及圖案化灰化層217a。Thereafter, referring to FIG. 2C, the patterned capping layer 209a and the patterned ashed layer 207a are subjected to a second reduction process to form a patterned cap layer 219a and a patterned ashed layer 217a. The line width of the patterned cap layer 219a and the patterned ashed layer 217a is W3. In this step, W2 is reduced to W3, and W3 is also smaller than the exposure limit size. The steps of Figures 2B and 2C can be accomplished in the same reaction chamber. Following, the reduced patterned photoresist layer 218 is removed. In particular, the first reduction process or the second reduction process may be optional. That is, the patterned cap layer 219a and the patterned ashed layer 217a may be formed only by the first reduction process or the second reduction process.
接著，請參照圖2D，形成罩幕層210以覆蓋圖案化頂蓋層219a及圖案化灰化層217a。罩幕層210的材料例如是富矽(silicon rich)材料，且其形成方法包括進行塗佈(spin coating)製程。在此實施例中，罩幕層210的材料為矽含量為5-30wt%的矽聚合物，其厚度為約1500埃左右。Next, referring to FIG. 2D, a mask layer 210 is formed to cover the patterned cap layer 219a and the patterned ashed layer 217a. The material of the mask layer 210 is, for example, a silicon rich material, and the method of forming the same includes performing a spin coating process. In this embodiment, the material of the mask layer 210 is a cerium polymer having a cerium content of 5 to 30% by weight and a thickness of about 1500 angstroms.
然後，請參照圖2E，移除圖案化頂蓋層219a及部份罩幕層210以曝露出圖案化灰化層217a及形成圖案化罩幕層220。圖案化罩幕層220為圖案化灰化層217a之補償層。移除圖案化頂蓋層219a及部份罩幕層210的方法包括進行回蝕刻法，其使用的反應氣體包括A及CF4 。Then, referring to FIG. 2E, the patterned cap layer 219a and a portion of the cap layer 210 are removed to expose the patterned ash layer 217a and form the patterned mask layer 220. The patterned mask layer 220 is a compensation layer for the patterned ashing layer 217a. The method of removing the patterned cap layer 219a and the partial cap layer 210 includes performing an etch back process using reactive gases including A and CF 4 .
之後，請參照圖2F，移除圖案化灰化層217a以在圖案化罩幕層220中形成開口211，且開口211之寬度為W3。移除圖案化灰化層217a的方法包括進行蝕刻製程，其使用的反應氣體包括A、N2 及O2 。Thereafter, referring to FIG. 2F, the patterned ashing layer 217a is removed to form an opening 211 in the patterned mask layer 220, and the opening 211 has a width W3. The method of removing the patterned ashing layer 217a includes performing an etching process using reactive gases including A, N 2 and O 2 .
繼之，請參照圖2G，以圖案化罩幕層220為罩幕，來圖案化轉移層205，以形成圖案化轉移層205a。圖案化轉移層205a具有開口217，且開口217的寬度為W3。圖案化此轉移層205的方法包括進行蝕刻製程，其使用的反應氣體包括CF4 及CHF3 。Next, referring to FIG. 2G, the transfer layer 205 is patterned by patterning the mask layer 220 as a mask to form a patterned transfer layer 205a. The patterned transfer layer 205a has an opening 217, and the width of the opening 217 is W3. The method of patterning the transfer layer 205 includes performing an etching process using reactive gases including CF 4 and CHF 3 .
如圖2A至2G所示，在基底200上依序形成材料層202及灰化層203。然後，形成圖案化轉移層205a在灰化層203上。As shown in FIGS. 2A to 2G, a material layer 202 and an ash layer 203 are sequentially formed on the substrate 200. Then, a patterned transfer layer 205a is formed on the ash layer 203.
接著，請參照圖2H，以圖案化轉移層205a為罩幕，來圖案化灰化層203，以形成圖案化灰化層203a。圖案化灰化層203a具有開口215，且開口215的寬度為W3。圖案化此灰化層203的方法包括進行蝕刻製程，其使用的反應氣體包括Ar、N2 及O2 。此外，在形成圖案化灰化層203a的步驟中，圖案化罩幕層220也會同時被移除。Next, referring to FIG. 2H, the ashing layer 203 is patterned by patterning the transfer layer 205a as a mask to form a patterned ash layer 203a. The patterned ashing layer 203a has an opening 215, and the opening 215 has a width W3. The method of patterning the ashing layer 203 includes performing an etching process using reactive gases including Ar, N 2 and O 2 . Further, in the step of forming the patterned ashing layer 203a, the patterned mask layer 220 is also removed at the same time.
然後，請參照圖2I，在形成圖案化灰化層203a之後，依照第一實施例之圖1H至1I描述的方法，以形成圖案化材料層202a，細節於此不再贅述。圖案化材料層202a具有開口213，且開口213的寬度為W3。Then, referring to FIG. 2I, after the patterned ashing layer 203a is formed, the method described in FIGS. 1H to 1I of the first embodiment is performed to form the patterned material layer 202a, and details are not described herein again. The patterned material layer 202a has an opening 213, and the opening 213 has a width W3.
基於上述，在基底200上依序形成材料層202、灰化層203及圖案化轉移層205a。然後，依序轉移圖案化轉移層205a的圖案至灰化層203及材料層202。Based on the above, the material layer 202, the ashing layer 203, and the patterned transfer layer 205a are sequentially formed on the substrate 200. Then, the pattern of the patterned transfer layer 205a is sequentially transferred to the ash layer 203 and the material layer 202.
在上述的實施例中，材料層是用以定義字元線，但本發明並不以此為限。本發明也可以應用到製作接觸窗(contact plug)、介層窗(via plug)或雙鑲嵌開口(dual damascene opening)。以下將詳細描述之。In the above embodiments, the material layer is used to define the word line, but the invention is not limited thereto. The invention can also be applied to making contact plugs, via plugs or dual damascene openings. This will be described in detail below.
圖3A到3E是根據本發明之第三實施例所繪示之圖案化方法的剖面示意圖。3A to 3E are schematic cross-sectional views showing a patterning method according to a third embodiment of the present invention.
首先，請參照圖3A，在基底300上依序形成材料層302、灰化層304、轉移層306及圖案化光阻層310。基底300例如是矽基底。材料層302的材料例如是介電材料。在此實施例中，材料層302例如是層間介電(inter-layer dielectric；ILD)氧化層，且其形成方法包括進行化學氣相沉積製程。圖案化光阻層310之開口311的寬度為W4，且W4例如是等於曝光極限尺寸。此外，也可以選擇性地在轉移層306及圖案化光阻層310之間形成底抗反射塗佈(bottom anti-reflection coating；BARC)層308，底抗反射塗佈層308用作抗反射光吸收層。另外，也可以選擇性地在灰化層304及轉移層306之間形成罩幕層305。罩幕層305的材料例如是矽或氮化矽，且其形成方法包括進行化學氣相沉積製程。First, referring to FIG. 3A, a material layer 302, an ash layer 304, a transfer layer 306, and a patterned photoresist layer 310 are sequentially formed on the substrate 300. The substrate 300 is, for example, a crucible substrate. The material of material layer 302 is, for example, a dielectric material. In this embodiment, the material layer 302 is, for example, an inter-layer dielectric (ILD) oxide layer, and the method of forming the same includes performing a chemical vapor deposition process. The width of the opening 311 of the patterned photoresist layer 310 is W4, and W4 is, for example, equal to the exposure limit size. In addition, a bottom anti-reflection coating (BARC) layer 308 may be selectively formed between the transfer layer 306 and the patterned photoresist layer 310, and the bottom anti-reflective coating layer 308 is used as anti-reflection light. Absorbing layer. Alternatively, a mask layer 305 may be selectively formed between the ashing layer 304 and the transfer layer 306. The material of the mask layer 305 is, for example, tantalum or tantalum nitride, and the method of forming the same includes performing a chemical vapor deposition process.
接著，請參照圖3B，以圖案化光阻層310為罩幕，來圖案化底抗反射塗佈層308，且聚合物312沉積在圖案化光阻層310的側壁上。也就是說，圖案化光阻層310之開口311的寬度由於聚合物312的沉積，而由W4縮減到W5。因為W4等於曝光極限尺寸，因此W5會小於曝光極限尺寸。圖案化此底抗反射塗佈層308的方法包括進行蝕刻製程，其使用的反應氣體包括CF4 及CH2 F2 。Next, referring to FIG. 3B, the bottom anti-reflective coating layer 308 is patterned by patterning the photoresist layer 310 as a mask, and the polymer 312 is deposited on the sidewall of the patterned photoresist layer 310. That is, the width of the opening 311 of the patterned photoresist layer 310 is reduced from W4 to W5 due to the deposition of the polymer 312. Since W4 is equal to the exposure limit size, W5 will be smaller than the exposure limit size. The method of patterning the bottom anti-reflective coating layer 308 includes performing an etching process using reactive gases including CF 4 and CH 2 F 2 .
然後，請參照圖3C，以圖案化光阻層310及聚合物312為罩幕，來圖案化轉移層306，以形成圖案化轉移層306a。圖案化轉移層306a具有開口307，且開口307的寬度為W5。圖案化此轉移層306的方法包括進行蝕刻製程，其使用的反應氣體包括CF4 及CH2 F2 。圖3B與3C的步驟可以在同一反應室中完成。之後，移除底抗反射塗佈層308、圖案化光阻層310及聚合物312。Then, referring to FIG. 3C, the transfer layer 306 is patterned by patterning the photoresist layer 310 and the polymer 312 as a mask to form a patterned transfer layer 306a. The patterned transfer layer 306a has an opening 307, and the width of the opening 307 is W5. The method of patterning the transfer layer 306 includes performing an etching process using reactive gases including CF 4 and CH 2 F 2 . The steps of Figures 3B and 3C can be accomplished in the same reaction chamber. Thereafter, the bottom anti-reflective coating layer 308, the patterned photoresist layer 310, and the polymer 312 are removed.
繼之，請參照圖3D，以圖案化轉移層306a為罩幕，來圖案化罩幕層305，以形成圖案化罩幕層305a。接下來，請參照圖3E，以圖案化罩幕層305a為罩幕，來圖案化灰化層304，以形成圖案化灰化層304a。在圖案化此灰化層304的步驟中，圖案化轉移層306a也會同時被移除。然後，以圖案化灰化層304a為罩幕，來圖案化材料層302，以形成具有開口303之圖案化材料層302a。在圖案化此材料層302的步驟中，圖案化罩幕層305a也會同時被移除。接著，移除圖案化灰化層304a。圖3D與3E的步驟可以在同一反應室中完成。此外，圖3D至3E中每一步驟均可視為自對準製程，因此圖案化轉移層306a中開口307的寬度與圖案化材料層302a中開口303的寬度相等。也就是說，開口303的寬度為W5。Next, referring to FIG. 3D, the mask layer 305 is patterned with the patterned transfer layer 306a as a mask to form a patterned mask layer 305a. Next, referring to FIG. 3E, the ashing layer 304 is patterned by patterning the mask layer 305a as a mask to form a patterned ashing layer 304a. In the step of patterning the ashing layer 304, the patterned transfer layer 306a is also removed at the same time. The material layer 302 is then patterned with the patterned ashing layer 304a as a mask to form a patterned material layer 302a having openings 303. In the step of patterning this material layer 302, the patterned mask layer 305a is also removed at the same time. Next, the patterned ashing layer 304a is removed. The steps of Figures 3D and 3E can be accomplished in the same reaction chamber. Moreover, each of the steps of FIGS. 3D through 3E can be considered a self-aligned process such that the width of the opening 307 in the patterned transfer layer 306a is equal to the width of the opening 303 in the patterned material layer 302a. That is, the width of the opening 303 is W5.
基於上述，在基底300上依序形成材料層302、灰化層304及圖案化轉移層306a。然後，依序轉移圖案化轉移層306a的圖案至灰化層304及材料層302。Based on the above, the material layer 302, the ashing layer 304, and the patterned transfer layer 306a are sequentially formed on the substrate 300. Then, the pattern of the patterned transfer layer 306a is sequentially transferred to the ash layer 304 and the material layer 302.
在第三實施例中，以具有陣列區域之材料層為例來說明之，但並不用以限定本發明。熟知此技藝者應了解，材料層也可以同時具有陣列區域及周邊區域。In the third embodiment, the material layer having the array region is taken as an example, but is not intended to limit the present invention. It is well known to those skilled in the art that the material layer can also have both an array area and a peripheral area.
圖4A到4F是根據本發明之第四實施例所繪示之圖案化方法的剖面示意圖。第四實施例與第三實施例類似，其中的差別在於第四實施例之轉移層306被圖案化兩次，因此第四實施例之圖案密度會是第三實施例之圖案密度的兩倍。4A through 4F are schematic cross-sectional views showing a patterning method according to a fourth embodiment of the present invention. The fourth embodiment is similar to the third embodiment in that the transfer layer 306 of the fourth embodiment is patterned twice, so that the pattern density of the fourth embodiment may be twice the pattern density of the third embodiment.
首先，提供如圖3B之結構。接著，請參照圖4A，以圖案化光阻層310為罩幕，來圖案化底抗反射塗佈層308，且聚合物312沉積在圖案化光阻層310的側壁上。然後，以圖案化光阻層310及聚合物312為罩幕，來圖案化轉移層306，以形成圖案化中間層306a’。之後，移除底抗反射塗佈層308、圖案化光阻層310及聚合物312。繼之，請參照圖4B，在圖案化中間層306a’上依序形成底抗反射塗佈層314及圖案化光阻層316。圖案化光阻層316的圖案317與圖案化中間層306a’的圖案315是交錯配置的。First, a structure as shown in Fig. 3B is provided. Next, referring to FIG. 4A, the bottom anti-reflective coating layer 308 is patterned by patterning the photoresist layer 310 as a mask, and the polymer 312 is deposited on the sidewall of the patterned photoresist layer 310. Then, the transfer layer 306 is patterned by patterning the photoresist layer 310 and the polymer 312 to form a patterned intermediate layer 306a'. Thereafter, the bottom anti-reflective coating layer 308, the patterned photoresist layer 310, and the polymer 312 are removed. Next, referring to FIG. 4B, a bottom anti-reflective coating layer 314 and a patterned photoresist layer 316 are sequentially formed on the patterned intermediate layer 306a'. The pattern 317 of the patterned photoresist layer 316 and the pattern 315 of the patterned intermediate layer 306a' are staggered.
然後，請參照4C，以圖案化光阻層316為罩幕，來圖案化底抗反射塗佈層314，且聚合物318沉積在圖案化光阻層316的側壁上。接著，請參照圖4D，以圖案化光阻層316及聚合物318為罩幕，來圖案化此圖案化中間層306a’，以形成圖案化轉移層306a。圖4C與4D的步驟可以在同一反應室中完成。之後，移除底抗反射塗佈層314、圖案化光阻層316及聚合物318。Then, referring to 4C, the bottom anti-reflective coating layer 314 is patterned by patterning the photoresist layer 316 as a mask, and the polymer 318 is deposited on the sidewall of the patterned photoresist layer 316. Next, referring to FIG. 4D, the patterned intermediate layer 306a' is patterned by patterning the photoresist layer 316 and the polymer 318 as a mask to form a patterned transfer layer 306a. The steps of Figures 4C and 4D can be accomplished in the same reaction chamber. Thereafter, the bottom anti-reflective coating layer 314, the patterned photoresist layer 316, and the polymer 318 are removed.
繼之，請參照圖4E，以圖案化轉移層306a為罩幕，來圖案化罩幕層305，以形成圖案化罩幕層305a。然後，請參照4F，在形成圖案化罩幕層305a之後，依照第三實施例之圖3E描述的方法，以形成圖案化材料層302a，細節於此不再贅述。Next, referring to FIG. 4E, the mask layer 305 is patterned with the patterned transfer layer 306a as a mask to form a patterned mask layer 305a. Then, referring to FIG. 4F, after the patterned mask layer 305a is formed, the method described in FIG. 3E of the third embodiment is performed to form the patterned material layer 302a, and details are not described herein again.
圖5A到5I是根據本發明之第五實施例所繪示之圖案化方法的剖面示意圖。5A to 5I are schematic cross-sectional views showing a patterning method according to a fifth embodiment of the present invention.
首先，請參照圖3A，在基底400上依序形成(由下而上)包括阻擋層402、介電層404、另一阻擋層406、另一介電層408之材料層410。基底400例如是導體基底，且其材料例如是Cu、AlCu或W。阻擋層402及406的材料例如是氮化矽或氮氧化矽，且其形成方法包括進行化學氣相沉積製程。介電層404及408的材料例如是氧化矽，且其形成方法包括進行化學氣相沉積製程。接著，在材料層410上依序形成灰化層412、轉移層414、底抗反射塗佈層416及圖案化光阻層418。灰化層412的材料例如是非晶碳，且其形成方法包括進行化學氣相沉積製程。轉移層414的材料例如是氧化矽或氮氧化矽，且其形成方法包括進行化學氣相沉積製程。First, referring to FIG. 3A, a material layer 410 including a barrier layer 402, a dielectric layer 404, another barrier layer 406, and another dielectric layer 408 is sequentially formed (from bottom to top) on the substrate 400. The substrate 400 is, for example, a conductor substrate, and its material is, for example, Cu, AlCu or W. The materials of the barrier layers 402 and 406 are, for example, tantalum nitride or hafnium oxynitride, and the method of forming the same includes performing a chemical vapor deposition process. The material of the dielectric layers 404 and 408 is, for example, hafnium oxide, and the method of forming the same includes performing a chemical vapor deposition process. Next, an ashing layer 412, a transfer layer 414, a bottom anti-reflective coating layer 416, and a patterned photoresist layer 418 are sequentially formed on the material layer 410. The material of the ashing layer 412 is, for example, amorphous carbon, and the method of forming the same includes performing a chemical vapor deposition process. The material of the transfer layer 414 is, for example, hafnium oxide or hafnium oxynitride, and the method of forming the same includes performing a chemical vapor deposition process.
然後，請參照圖5B，以圖案化光阻層418為罩幕，依序來圖案化底抗反射塗佈層416及轉移層414，以形成具有開口圖案415之圖案化轉移層414a。圖案化此底抗反射塗佈層416及轉移層414的方法包括進行蝕刻製程，其使用的反應氣體包括CF4 及O2 。之後，移除底抗反射塗佈層416及圖案化光阻層418。Then, referring to FIG. 5B, the bottom anti-reflective coating layer 416 and the transfer layer 414 are sequentially patterned by patterning the photoresist layer 418 as a mask to form a patterned transfer layer 414a having an opening pattern 415. The method of patterning the bottom anti-reflective coating layer 416 and the transfer layer 414 includes performing an etching process using reactive gases including CF 4 and O 2 . Thereafter, the bottom anti-reflective coating layer 416 and the patterned photoresist layer 418 are removed.
繼之，請參照圖5C，在圖案化轉移層414a上依序形成灰化層420、轉移層422、底抗反射塗佈層424及圖案化光阻層426。灰化層420的材料例如是非晶碳，且其形成方法包括進行化學氣相沉積製程。轉移層422的材料例如是氧化矽或氮氧化矽，且其形成方法包括進行化學氣相沉積製程。Next, referring to FIG. 5C, an ashing layer 420, a transfer layer 422, a bottom anti-reflective coating layer 424, and a patterned photoresist layer 426 are sequentially formed on the patterned transfer layer 414a. The material of the ashing layer 420 is, for example, amorphous carbon, and the method of forming the same includes performing a chemical vapor deposition process. The material of the transfer layer 422 is, for example, hafnium oxide or hafnium oxynitride, and the method of forming the same includes performing a chemical vapor deposition process.
然後，請參照圖5D，以圖案化光阻層426為罩幕，依序來圖案化底抗反射塗佈層424及轉移層422，以形成具有開口圖案423之圖案化轉移層422a。圖案化此底抗反射塗佈層424及轉移層422的方法包括進行蝕刻製程，其使用的反應氣體包括CF4 及O2 。如第三實施例所述，在圖案化此底抗反射塗佈層424的步驟中，圖案化光阻層426的側壁可能會沉積聚合物，因此圖案化光阻層426的開口寬度可以縮減至小於曝光極限尺寸。因此，圖案化轉移層422a之開口圖案423的寬度也會小於曝光極限尺寸。Then, referring to FIG. 5D, the bottom anti-reflective coating layer 424 and the transfer layer 422 are sequentially patterned by patterning the photoresist layer 426 as a mask to form a patterned transfer layer 422a having an opening pattern 423. The method of patterning the bottom anti-reflective coating layer 424 and the transfer layer 422 includes performing an etching process using reactive gases including CF 4 and O 2 . As described in the third embodiment, in the step of patterning the bottom anti-reflective coating layer 424, the sidewall of the patterned photoresist layer 426 may deposit a polymer, so that the opening width of the patterned photoresist layer 426 can be reduced to Less than the exposure limit size. Therefore, the width of the opening pattern 423 of the patterned transfer layer 422a is also smaller than the exposure limit size.
如圖5A至5D所示，在材料層410上依序形成(由下而上)包括灰化層412及灰化層420之灰化結構421，其中圖案化轉移層414a位於灰化層412及灰化層420之間。然後，在灰化結構421上形成圖案化轉移層422a。As shown in FIGS. 5A to 5D, an ashing structure 421 including an ashing layer 412 and an ashing layer 420 is formed on the material layer 410 in sequence (from bottom to top), wherein the patterned transfer layer 414a is located in the ashing layer 412 and Between the ashing layers 420. Then, a patterned transfer layer 422a is formed on the ashing structure 421.
接著，請參照圖5E，以圖案化轉移層422a為罩幕，依序移除部份灰化層420及部分灰化層412，以依序轉移開口圖案423至灰化層420及灰化層412。依序移除部份灰化層420及部分灰化層412的方法包括進行蝕刻製程，其使用的反應氣體包括O2 及Ar。Next, referring to FIG. 5E, the patterned transfer layer 422a is used as a mask, and the partial ash layer 420 and the partial ash layer 412 are sequentially removed to sequentially transfer the opening pattern 423 to the ash layer 420 and the ash layer. 412. The method of sequentially removing the partial ashing layer 420 and the partial ashing layer 412 includes performing an etching process using a reaction gas including O 2 and Ar.
然後，請參照圖5F，以灰化層420為罩幕，依序移除部份介電層408及部份阻擋層406，以依序轉移開口圖案423至介電層408及阻擋層406。依序移除部份介電層408及部份阻擋層406的方法包括進行蝕刻製程，其中對介電層408所使用的氣體包括C5 F8 、Ar及O2 ，對阻擋層406所使用的氣體包括CHF3 、CH2 F2 、O2 及Ar。此外，在依序移除部份介電層408及部份阻擋層406的步驟中，圖案化轉移層422a也會同時被移除。Then, referring to FIG. 5F, a portion of the dielectric layer 408 and a portion of the barrier layer 406 are sequentially removed by using the ash layer 420 as a mask to sequentially transfer the opening pattern 423 to the dielectric layer 408 and the barrier layer 406. The method of sequentially removing a portion of the dielectric layer 408 and the portion of the barrier layer 406 includes performing an etching process, wherein the gas used for the dielectric layer 408 includes C 5 F 8 , Ar, and O 2 for use with the barrier layer 406. The gases include CHF 3 , CH 2 F 2 , O 2 and Ar. In addition, in the step of sequentially removing part of the dielectric layer 408 and the partial barrier layer 406, the patterned transfer layer 422a is also removed at the same time.
之後，請參照圖5G，以圖案化轉移層414a為罩幕，移除部分灰化層412，以轉移開口圖案415至灰化層412。移除部分灰化層412的方法包括進行蝕刻製程，其使用的反應氣體包括O2 及Ar。Thereafter, referring to FIG. 5G, with the patterned transfer layer 414a as a mask, a portion of the ashing layer 412 is removed to transfer the opening pattern 415 to the ashing layer 412. The method of removing a portion of the ashing layer 412 includes performing an etching process using a reaction gas including O 2 and Ar.
繼之，請參照圖5H，以具有開口圖案415之灰化層412為罩幕，移除部份介電層408及部分介電層404，以形成雙鑲嵌開口432。詳而言之，轉移開口圖案415至介電層408，以於介電層408中形成開口430。轉移開口圖案423至介電層404，以於介電層404中形成開口428。移除部份介電層408及部分介電層404的方法包括進行蝕刻製程，其使用的反應氣體包括C5 F8 、Ar及O2 。此外，在移除部份介電層408及部分介電層404的步驟中，圖案化轉移層414a也會同時被移除。Then, referring to FIG. 5H , a portion of the dielectric layer 408 and a portion of the dielectric layer 404 are removed by using the ash layer 412 having the opening pattern 415 as a mask to form the dual damascene opening 432 . In detail, the opening pattern 415 is transferred to the dielectric layer 408 to form an opening 430 in the dielectric layer 408. The opening pattern 423 is transferred to the dielectric layer 404 to form an opening 428 in the dielectric layer 404. The method of removing a portion of the dielectric layer 408 and the portion of the dielectric layer 404 includes performing an etching process using reactive gases including C 5 F 8 , Ar, and O 2 . In addition, in the step of removing a portion of the dielectric layer 408 and a portion of the dielectric layer 404, the patterned transfer layer 414a is also removed at the same time.
然後，請參照圖5I，移除被雙鑲嵌開口432曝露出的阻擋層406及阻擋層402。移除被雙鑲嵌開口432曝露出的阻擋層406及阻擋層402的方法包括進行蝕刻製程，其使用的反應氣體包括CHF3 、CH2 F2 、O2 及Ar。接著，藉由進行例如是氧氣電漿灰化製程來移除灰化層412。特別要注意的是，圖5D至5I中每一步驟均可視為自對準製程，且可在同一反應室中完成，因此製造方法非常簡單且快速。Then, referring to FIG. 5I, the barrier layer 406 and the barrier layer 402 exposed by the dual damascene opening 432 are removed. The method of removing the barrier layer 406 and the barrier layer 402 exposed by the dual damascene opening 432 includes performing an etching process using reactive gases including CHF 3 , CH 2 F 2 , O 2 , and Ar. Next, the ashing layer 412 is removed by performing, for example, an oxygen plasma ashing process. It is particularly noted that each of the steps of Figures 5D through 5I can be considered a self-aligned process and can be done in the same reaction chamber, so the manufacturing process is very simple and fast.
如圖5E至5I所示，以圖案化轉移層414a及圖案化轉移層422a為罩幕，來圖案化灰化結構421。然後，以圖案化灰化結構為罩幕，來圖案化材料層410，以於材料層410中形成雙鑲嵌開口432。雙鑲嵌開口432包括開口428及開口430。開口428位於阻擋層402及介電層404中，且開口430位於阻擋層406及介電層408中。開口428位在開口430的正下方，且開口428的寬度小於開口430的寬度。As shown in FIGS. 5E to 5I, the ashing structure 421 is patterned with the patterned transfer layer 414a and the patterned transfer layer 422a as masks. The material layer 410 is then patterned with the patterned ashing structure as a mask to form a dual damascene opening 432 in the material layer 410. The dual damascene opening 432 includes an opening 428 and an opening 430. The opening 428 is located in the barrier layer 402 and the dielectric layer 404, and the opening 430 is located in the barrier layer 406 and the dielectric layer 408. The opening 428 is located directly below the opening 430 and the width of the opening 428 is less than the width of the opening 430.
在此實施例中，雙鑲嵌開口432的尺寸由開口圖案415及423的寬度決定。因此，在形成雙鑲嵌開口432之前，可以先進行開口圖案415及開口圖案423之間的疊對(overlay)量測。當疊對量測的結果超出所需規格，可經由幾個步驟重製(rework)並進行再圖案化以形成灰化結構421、圖案化轉移層414a及圖案化轉移層422a。In this embodiment, the size of the dual damascene opening 432 is determined by the width of the opening patterns 415 and 423. Therefore, an overlay measurement between the opening pattern 415 and the opening pattern 423 may be performed before the dual damascene opening 432 is formed. When the results of the overlay measurement exceed the required specifications, rework can be performed through several steps and re-patterned to form the ashing structure 421, the patterned transfer layer 414a, and the patterned transfer layer 422a.
綜上所述，當本發明應用在製作非揮發性記憶體的字元線時，在間距(pitch)維持不變的情況下，由於本發明之圖案化的方法可以縮小元件開口，因此可以製作出具有較大線寬的字元線。如此一來，可以在維持元件密度的情況下避免短通道效應，提升元件的效能。In summary, when the present invention is applied to a word line of a non-volatile memory, in the case where the pitch remains unchanged, since the patterning method of the present invention can reduce the element opening, it can be fabricated. A word line with a larger line width. In this way, the short channel effect can be avoided while maintaining the component density, and the performance of the component can be improved.
此外，本發明之圖案化的方法也可以應用在製作較小的接觸窗或介層窗，可以在不需更動現行設備及光阻的情形下，提高圖案密度高達兩倍。因此，可以大量節省成本，大幅提升競爭力。In addition, the patterned method of the present invention can also be applied to make smaller contact windows or vias, which can increase the pattern density by up to two times without changing the current equipment and photoresist. Therefore, it is possible to save a lot of money and greatly enhance competitiveness.
另外，本發明之圖案化的方法在製作雙鑲嵌開口時，可以允許較大的製程裕度。在形成雙鑲嵌開口之前，可以先行確認雙鑲嵌開口的疊對量測，因此可以避免錯誤疊對(misalignment)發生。In addition, the patterned method of the present invention allows for greater process margins when making dual damascene openings. Prior to forming the dual damascene opening, the stacking of the dual damascene openings can be confirmed first, thus avoiding misalignment.
雖然本發明已以較佳實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.
100、200、300、400．．．基底100, 200, 300, 400. . . Base
101、201、404、408．．．介電層101, 201, 404, 408. . . Dielectric layer
102、202、302、410．．．材料層102, 202, 302, 410. . . Material layer
102a、202a、302a．．．圖案化材料層102a, 202a, 302a. . . Patterned material layer
103、105、111、211、213、215、217、303、307、311．．．開口103, 105, 111, 211, 213, 215, 217, 303, 307, 311. . . Opening
104、203、207、304、412、420．．．灰化層104, 203, 207, 304, 412, 420. . . Ashing layer
104a、203a、207a、217a、304a．．．圖案化灰化層104a, 203a, 207a, 217a, 304a. . . Patterned ash layer
106、205、306、414、422．．．轉移層106, 205, 306, 414, 422. . . Transfer layer
116a、116a、205a、306a、414a、422a．．．圖案化轉移層116a, 116a, 205a, 306a, 414a, 422a. . . Patterned transfer layer
106a、106a’、206a、206a’．．．圖案化圖案轉移層106a, 106a', 206a, 206a'. . . Patterned pattern transfer layer
108、208、310、316、418、426．．．圖案化光阻層108, 208, 310, 316, 418, 426. . . Patterned photoresist layer
118、218．．．經削減之圖案化光阻層118,218. . . Reduced patterned photoresist layer
110、210、305．．．罩幕層110, 210, 305. . . Mask layer
120．．．補償層120. . . Compensation layer
209．．．頂蓋層209. . . Roof layer
220、305a．．．圖案化罩幕層220, 305a. . . Patterned mask layer
209a、219a．．．圖案化頂蓋層209a, 219a. . . Patterned top cover
315、317．．．圖案315, 317. . . pattern
306a’．．．圖案化中間層306a’. . . Patterned middle layer
308、314、416、424．．．底抗反射塗佈層308, 314, 416, 424. . . Bottom anti-reflective coating
312、318．．．聚合物312, 318. . . polymer
402、406．．．阻擋層402, 406. . . Barrier layer
415、423．．．開口圖案415, 423. . . Opening pattern
421．．．灰化結構421. . . Ashed structure
428、430．．．開口428,430. . . Opening
432．．．雙鑲嵌開口432. . . Double inlaid opening
W1、W2、W3、W4、W5．．．寬度W1, W2, W3, W4, W5. . . width
圖1A到1I是根據本發明之第一實施例所繪示之圖案化方法的剖面示意圖。1A through 1I are schematic cross-sectional views showing a patterning method according to a first embodiment of the present invention.
圖2A到2I是根據本發明之第二實施例所繪示之圖案化方法的剖面示意圖。2A through 2I are schematic cross-sectional views showing a patterning method according to a second embodiment of the present invention.
圖3A到3E是根據本發明之第三實施例所繪示之圖案化方法的剖面示意圖。3A to 3E are schematic cross-sectional views showing a patterning method according to a third embodiment of the present invention.
圖4A到4F是根據本發明之第四實施例所繪示之圖案化方法的剖面示意圖。4A through 4F are schematic cross-sectional views showing a patterning method according to a fourth embodiment of the present invention.
圖5A到5I是根據本發明之第五實施例所繪示之圖案化方法的剖面示意圖。5A to 5I are schematic cross-sectional views showing a patterning method according to a fifth embodiment of the present invention.
100．．．基底100. . . Base
101．．．介電層101. . . Dielectric layer
102．．．材料層102. . . Material layer
104．．．灰化層104. . . Ashing layer
116a．．．圖案化第一轉移層116a. . . Patterned first transfer layer
W3．．．寬度W3. . . width
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040043623A1 (en) * | 2002-06-20 | 2004-03-04 | Wei Liu | Method for fabricating a gate structure of a field effect transistor |
| US20040102048A1 (en) * | 2002-11-25 | 2004-05-27 | Renesas Technology Corp. | Method for manufacturing semiconductor device |
| US6939808B2 (en) * | 2002-08-02 | 2005-09-06 | Applied Materials, Inc. | Undoped and fluorinated amorphous carbon film as pattern mask for metal etch |
| US7064078B2 (en) * | 2004-01-30 | 2006-06-20 | Applied Materials | Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme |
| US7172969B2 (en) * | 2004-08-26 | 2007-02-06 | Tokyo Electron Limited | Method and system for etching a film stack |
| TWI307917B (en) * | 2002-07-31 | 2009-03-21 | Advanced Micro Devices Inc | Method for reducing pattern deformation and photoresist poisoning in semiconductor device fabrication |
-
2009
- 2009-04-27 TW TW98113885A patent/TWI419201B/en active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040043623A1 (en) * | 2002-06-20 | 2004-03-04 | Wei Liu | Method for fabricating a gate structure of a field effect transistor |
| TWI307917B (en) * | 2002-07-31 | 2009-03-21 | Advanced Micro Devices Inc | Method for reducing pattern deformation and photoresist poisoning in semiconductor device fabrication |
| US6939808B2 (en) * | 2002-08-02 | 2005-09-06 | Applied Materials, Inc. | Undoped and fluorinated amorphous carbon film as pattern mask for metal etch |
| US20040102048A1 (en) * | 2002-11-25 | 2004-05-27 | Renesas Technology Corp. | Method for manufacturing semiconductor device |
| US7064078B2 (en) * | 2004-01-30 | 2006-06-20 | Applied Materials | Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme |
| US7172969B2 (en) * | 2004-08-26 | 2007-02-06 | Tokyo Electron Limited | Method and system for etching a film stack |
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