TWI418059B - Method for increasing light emitting efficiency of gan-based led - Google Patents
Method for increasing light emitting efficiency of gan-based led Download PDFInfo
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本發明是有關於一種氮化鎵系列發光二極體(GaN-based LED)，且特別是有關於一種增加氮化鎵系列發光二極體之發光效率(light emitting efficiency)的方法。 The present invention relates to a gallium nitride series GaN-based LED, and more particularly to a method for increasing the light emitting efficiency of a gallium nitride series light emitting diode.
近年來節省能源及開發新能源是很重要的議題，光源對於人類現今是不可或缺的，而其中發光二極體是最受矚目的節能光源。發光二極體除了是主要的照明光源外，也因其省電、壽命長與低污染的特性，成為節能與環保的重要光源。 In recent years, energy conservation and the development of new energy sources are very important issues. Light sources are indispensable for human beings today, and the light-emitting diodes are the most attractive energy-saving light sources. In addition to being the main illumination source, the LED is also an important source of energy saving and environmental protection due to its power saving, long life and low pollution.
目前以III-V族氮化物(如氮化鎵)為發光二極體的主要研究對象之一。圖1即為習知一種氮化鎵發光二極體元件之剖面示意圖。請參照圖1，在一個基板100上形成有氮化鎵發光二極體102，另外在基板100上會有封裝材104包覆整個氮化鎵發光二極體102。上述氮化鎵發光二極體102通常由一層N-GaN層106、一層發光層108以及一層P-GaN層110所構成。電子電洞對會在多重量子井結構(multi quantum well，MQW)的發光層108結合發出光112。 At present, one of the main research objects of III-V nitrides (such as gallium nitride) is a light-emitting diode. FIG. 1 is a schematic cross-sectional view of a conventional gallium nitride light emitting diode device. Referring to FIG. 1 , a gallium nitride light emitting diode 102 is formed on one substrate 100 , and a package material 104 is coated on the substrate 100 to cover the entire gallium nitride light emitting diode 102 . The gallium nitride light-emitting diode 102 is generally composed of a layer of an N-GaN layer 106, a light-emitting layer 108, and a layer of a P-GaN layer 110. The electron hole pair combines to emit light 112 in a multi-quantum well (MQW) luminescent layer 108.
然而，因為氮化鎵發光二極體102的折射率約為2.5，而發光二極體元件的封裝材104(如環氧樹脂)的折射率約為1.56左右，因此兩者的折射率相差非常多，容易造成發光二極體102所發出的光112經由發光層108傳遞至 P-GaN層110及封裝材104的介面時，光112由密介質進入疏介質時因為折射率差異較大，使得大部分的光114會被反射回氮化鎵內部；經果多次反射碰撞，最後被氮化鎵吸收變成熱，導致氮化鎵發光二極體102的外部量子效率變低、發光效率不佳等問題產生。 However, since the refractive index of the gallium nitride light-emitting diode 102 is about 2.5, and the refractive index of the package material 104 (such as an epoxy resin) of the light-emitting diode element is about 1.56, the refractive indices of the two are very different. Many, it is easy to cause the light 112 emitted by the light-emitting diode 102 to be transmitted to the light through the light-emitting layer 108 to When the interface between the P-GaN layer 110 and the encapsulant 104 is in contact with the medium, the light 112 enters the dispersing medium from the dense medium because the refractive index difference is large, so that most of the light 114 is reflected back into the interior of the gallium nitride; Finally, it is absorbed by the gallium nitride to become heat, which causes problems such as low external quantum efficiency of the gallium nitride light-emitting diode 102 and poor luminous efficiency.
本發明提供一種增加氮化鎵系列發光二極體之發光效率的方法，可在氮化鎵系列發光二極體晶片上簡單地形成能增加其發光效率的薄膜。 The present invention provides a method for increasing the luminous efficiency of a gallium nitride series light-emitting diode, and a thin film capable of increasing the light-emitting efficiency thereof can be simply formed on a gallium nitride-based light-emitting diode wafer.
本發明提出一種增加氮化鎵系列發光二極體之發光效率的方法，包括先提供一個內部分為高溫區與低溫區的高溫爐，再將一氮化鎵系列發光二極體晶片放置到低溫區內，並將銦粒放置到高溫區內。然後，將氨氣(NH3)通入高溫爐的高溫區內與上述銦粒反應形成一氮化銦氣體，其反應式如下式(1)所示，並藉由高溫區與低溫區之間的溫差，而使氮化銦氣體沉積在氮化鎵系列發光二極體晶片之一出光表面上，進而成長為一氮化銦層。然後，在不移動氮化鎵系列發光二極體晶片的情形下，直接在高溫爐內氧化氮化銦層，其反應式如下式(2)所示，以便於氮化鎵系列發光二極體晶片之出光表面上形成一粗化氧化銦薄膜。 The invention provides a method for increasing the luminous efficiency of a gallium nitride series light emitting diode, which comprises first providing a high temperature furnace which is internally divided into a high temperature region and a low temperature region, and then placing a gallium nitride series light emitting diode wafer at a low temperature. In the zone, the indium particles are placed in a high temperature zone. Then, ammonia gas (NH 3 ) is introduced into the high temperature zone of the high temperature furnace to react with the indium particles to form an indium nitride gas, and the reaction formula is as shown in the following formula (1), and is between the high temperature zone and the low temperature zone. The temperature difference is such that the indium nitride gas is deposited on one of the light-emitting surfaces of the gallium nitride series light-emitting diode chip, and then grown into an indium nitride layer. Then, in the case of not moving the gallium nitride series light-emitting diode wafer, the indium nitride layer is directly oxidized in a high-temperature furnace, and the reaction formula is as shown in the following formula (2), so as to facilitate the gallium nitride series light-emitting diode. A roughened indium oxide film is formed on the light-emitting surface of the wafer.
在本發明之一實施例中，成長上述氮化銦層時的高溫區內的溫度在500℃~800℃之間。 In an embodiment of the invention, the temperature in the high temperature region when the indium nitride layer is grown is between 500 ° C and 800 ° C.
在本發明之一實施例中，成長上述氮化銦層時的低溫區的溫度在200℃~400℃之間。 In an embodiment of the invention, the temperature in the low temperature region when the indium nitride layer is grown is between 200 ° C and 400 ° C.
在本發明之一實施例中，所成長的氮化銦層為立方晶系的閃鋅礦結構(zincblende，ZB)。 In an embodiment of the invention, the grown indium nitride layer is a cubic zinc sprite structure (ZB).
在本發明之一實施例中，氧化上述氮化銦層的溫度在200℃~400℃之間。 In an embodiment of the invention, the temperature of the indium nitride layer is between 200 ° C and 400 ° C.
在本發明之一實施例中，氧化上述氮化銦層的方法包括將氧氣通入高溫爐內。 In one embodiment of the invention, a method of oxidizing the indium nitride layer includes passing oxygen into a high temperature furnace.
在本發明之一實施例中，上述氮化銦層以及上述粗化氧化銦薄膜均為奈米級結構。 In an embodiment of the invention, the indium nitride layer and the roughened indium oxide film are both nano-scale structures.
在本發明之一實施例中，上述粗化氧化銦薄膜的晶粒尺寸在100nm~900nm。 In an embodiment of the invention, the roughened indium oxide thin film has a grain size of 100 nm to 900 nm.
在本發明之一實施例中，上述氮化鎵系列發光二極體晶片是由GaN層、InN層、A1N層、InGaN層、AlGaN層、InAlGaN層及其組合其中之一所構成。 In an embodiment of the invention, the gallium nitride series light emitting diode wafer is composed of one of a GaN layer, an InN layer, an A1N layer, an InGaN layer, an AlGaN layer, an InAlGaN layer, and a combination thereof.
在本發明之一實施例中，上述氮化鎵系列發光二極體晶片包括藍綠光發光二極體晶片。 In an embodiment of the invention, the gallium nitride series light emitting diode chip comprises a blue-green light emitting diode chip.
在本發明之一實施例中，上述氮化鎵系列發光二極體晶片至少包括一層N型氮化鎵系層、一層P型氮化鎵系層以及介於N型氮化鎵系層與P型氮化鎵系層之間的一層發光層。 In an embodiment of the invention, the gallium nitride series light emitting diode chip comprises at least one layer of an N-type gallium nitride layer, a layer of a P-type gallium nitride layer, and an N-type gallium nitride layer and a P layer. A layer of light-emitting layer between the gallium nitride-based layers.
基於上述，本發明可簡單地在氮化鎵系列發光二極體 晶片上形成粗化氧化銦薄膜，且不移動氮化鎵系列發光二極體晶片就能完成所有製程，因此本發明形成粗化氧化銦薄膜的製程時間短。此外，本發明可利用高溫爐內之高溫區與低溫區之間的溫差，來控制氧化銦薄膜的尺寸。 Based on the above, the present invention can be simply applied to a gallium nitride series light-emitting diode The rough indium oxide thin film is formed on the wafer, and all the processes can be completed without moving the gallium nitride series light-emitting diode wafer. Therefore, the process time for forming the roughened indium oxide thin film of the present invention is short. In addition, the present invention can utilize the temperature difference between the high temperature zone and the low temperature zone in the high temperature furnace to control the size of the indium oxide film.
為讓本發明之上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。 The above described features and advantages of the present invention will be more apparent from the following description.
圖2A至圖2D是依照本發明之一實施例之一種增加氮化鎵系列發光二極體之發光效率的製作流程示意圖。 2A-2D are schematic diagrams showing a manufacturing process for increasing the luminous efficiency of a gallium nitride series light-emitting diode according to an embodiment of the invention.
請參照圖2A，首先提供一高溫爐200，且高溫爐200內分為一高溫區202與一低溫區204。在本實施例中，高溫爐200內的高溫區202有一個放置原料用的部件206，高溫爐200還在高溫區202外設有加熱器208以及一進氣閥210與一排氣閥212。當然本發明除圖2A所示的高溫爐200外，還可使用其他類型的高溫爐。然後，分別將一氮化鎵系列發光二極體晶片(GaN base LED chip)214放置到低溫區204內以及將銦粒216放置到高溫區202內。 Referring to FIG. 2A, a high temperature furnace 200 is first provided, and the high temperature furnace 200 is divided into a high temperature zone 202 and a low temperature zone 204. In the present embodiment, the high temperature zone 202 in the high temperature furnace 200 has a component 206 for placing a raw material. The high temperature furnace 200 is further provided with a heater 208 and an intake valve 210 and an exhaust valve 212 outside the high temperature zone 202. Of course, in addition to the high temperature furnace 200 shown in FIG. 2A, other types of high temperature furnaces can be used. Then, a gallium nitride series GaN base LED chip 214 is placed into the low temperature region 204 and the indium particles 216 are placed into the high temperature region 202, respectively.
然後，請參照圖2B，將氨氣(NH3)自進氣閥210通入高溫爐200的高溫區202內，當高溫區202內的溫度升溫至約500℃~800℃(較佳是在500℃~600℃)，氨氣會與銦粒216反應形成氮化銦(InN)氣體218，其反應式如下式(1)所示。 Then, referring to FIG. 2B, ammonia gas (NH 3 ) is introduced from the intake valve 210 into the high temperature zone 202 of the high temperature furnace 200, and the temperature in the high temperature zone 202 is raised to about 500 ° C to 800 ° C (preferably in From 500 ° C to 600 ° C, ammonia gas reacts with indium particles 216 to form indium nitride (InN) gas 218, and the reaction formula is as shown in the following formula (1).
此時，高溫爐200的低溫區204內的溫度譬如被控制在200℃~400℃之間。另外，排氣閥212在製程期間可維持著微排氣。 At this time, the temperature in the low temperature region 204 of the high temperature furnace 200 is controlled to be between 200 ° C and 400 ° C, for example. Additionally, the exhaust valve 212 maintains micro-exhaust during the process.
接著，請參照圖2C，藉由高溫區202與低溫區204之間的溫差，使氮化銦氣體218通過低溫區204時會開始沉積在氮化鎵系二極體晶片214的出光表面214a，並成長為一氮化銦層220，所成長的氮化銦層220為奈米級結構。當氮化銦層220之厚度達到1μm至數十μm時，即可關掉氨氣，並持續抽真空將剩餘氣體抽空。 Next, referring to FIG. 2C, the indium nitride gas 218 is deposited on the light-emitting surface 214a of the gallium nitride-based diode wafer 214 when the indium nitride gas 218 passes through the low-temperature region 204 by the temperature difference between the high-temperature region 202 and the low-temperature region 204. And growing into an indium nitride layer 220, the grown indium nitride layer 220 is a nano-scale structure. When the thickness of the indium nitride layer 220 reaches 1 μm to several tens of μm, the ammonia gas can be turned off, and the remaining gas is evacuated by continuously evacuating.
然後，請參照圖2D，在不移動氮化鎵系列發光二極體晶片214的情形下，直接在高溫爐200內氧化氮化銦層(圖2C之220)，其中氧化氮化銦層220的方法例如將氧氣(O2)自進氣閥210通入高溫爐200內，低溫區204的溫度一樣控制在200℃~400℃之間，將氮化銦層214氧化成粗化氧化銦(InxOy)薄膜222，其反應式如下式(2)所示。 Then, referring to FIG. 2D, the indium nitride layer (220 of FIG. 2C) is directly oxidized in the high temperature furnace 200 without moving the gallium nitride series light emitting diode wafer 214, wherein the indium oxide oxide layer 220 is For example, oxygen (O 2 ) is introduced into the high temperature furnace 200 from the intake valve 210, and the temperature of the low temperature region 204 is controlled between 200 ° C and 400 ° C to oxidize the indium nitride layer 214 into coarsened indium oxide (In x O y ) Film 222 having a reaction formula of the following formula (2).
由於氮化銦層220為奈米級結構，因此粗化氧化銦薄膜222依舊為奈米級結構。在本實施例中，粗化氧化銦薄膜222的晶粒尺寸約在100nm~900nm。而在氧化之後產生的氮氣，可經由排氣閥212將其排掉。 Since the indium nitride layer 220 has a nano-scale structure, the roughened indium oxide film 222 is still a nano-scale structure. In the present embodiment, the grain size of the roughened indium oxide film 222 is about 100 nm to 900 nm. The nitrogen gas generated after the oxidation can be discharged through the exhaust valve 212.
圖3是依照上一實施例之方法製作的氮化鎵系列發光二極體的剖面示意圖。請參照圖3，其中的氮化鎵系列發光二極體300包括氮化鎵系列發光二極體晶片302與位在氮化鎵系列發光二極體302之出光表面302a上的一層粗化 氧化銦薄膜304。在本實施例中，氮化鎵系列發光二極體302例如是由堆疊的一層N型氮化鎵系層306、一層發光層308以及一層P型氮化鎵系層310所構成。此外，凡是現有技術中的氮化鎵系列發光二極體均可應用於本實施例，例如由GaN層、InN層、AlN層、InGaN層、AlGaN層、InAlGaN層及其組合其中之一所構成的氮化鎵系列發光二極體，或者藍綠光發光二極體晶片。因此，本發明的氮化鎵系列發光二極體並不侷限於圖3所示的結構。 3 is a schematic cross-sectional view of a gallium nitride series light-emitting diode fabricated in accordance with the method of the previous embodiment. Referring to FIG. 3, the gallium nitride series light emitting diode 300 includes a gallium nitride series light emitting diode chip 302 and a layer of roughening on the light emitting surface 302a of the gallium nitride series light emitting diode 302. Indium oxide film 304. In the present embodiment, the gallium nitride series light-emitting diode 302 is composed of, for example, a stacked N-type gallium nitride layer 306, a light-emitting layer 308, and a P-type gallium nitride layer 310. In addition, all of the gallium nitride series light-emitting diodes in the prior art can be applied to the embodiment, for example, one of a GaN layer, an InN layer, an AlN layer, an InGaN layer, an AlGaN layer, an InAlGaN layer, and a combination thereof. A gallium nitride series light emitting diode, or a blue-green light emitting diode chip. Therefore, the gallium nitride series light-emitting diode of the present invention is not limited to the structure shown in FIG.
在圖3中，有一層粗化氧化銦薄膜304位在氮化鎵系列發光二極體302之出光表面302a，由於氧化銦之折射率介於氮化鎵系列發光二極體302的折射率與封裝材(未繪示)或空氣的折射率之間，所以可大幅減少傳統上光312由密介質(氮化鎵系列發光二極體302)進入疏介質時因為折射率差異大所導致的反射率變大的效應，讓發光層308所產生的光312可以盡量被導出氮化鎵系列發光二極體302內部，避免光312被侷限住而變成熱能造成能量損失。 In FIG. 3, a layer of roughened indium oxide film 304 is located on the light-emitting surface 302a of the gallium nitride-based light-emitting diode 302, and the refractive index of the indium oxide is in the refractive index of the gallium nitride-based light-emitting diode 302. The encapsulation material (not shown) or the refractive index of the air can greatly reduce the reflection caused by the difference in refractive index when the conventional glazing 312 is separated from the dense medium (gallium nitride series luminescent diode 302) into the medium. The effect of increasing the rate allows the light 312 generated by the light-emitting layer 308 to be extracted as much as possible into the interior of the gallium nitride-based light-emitting diode 302, thereby preventing the light 312 from being confined and becoming thermal energy to cause energy loss.
此外，因為粗化氧化銦薄膜304有類似島狀的外型，所以還能增加發光角度。這是因為在氮化鎵系列發光二極體302之出光表面302a若只是折射率匹配，則折射效應產生發光角度雖然比沒有氧化銦薄膜的發光二極體大，但是如圖3所示，粗化氧化銦薄膜304的島狀外型能使出光表面302a的發光角度變得更大；發光角度變大可以避免光暈形成、混色或亮度不均的問題發生，若應用於液晶面板的發光二極體背光模組上，還可避免直下式背光模組的混光 距離及側發光式背光模組的暗紋長度。 Further, since the roughened indium oxide thin film 304 has an island-like appearance, it is also possible to increase the light-emitting angle. This is because if the light-emitting surface 302a of the gallium nitride-based light-emitting diode 302 is only index-matched, the refractive effect is greater than that of the light-emitting diode without the indium oxide film, but as shown in FIG. The island-like shape of the indium oxide film 304 can make the light-emitting angle of the light-emitting surface 302a larger; the light-emitting angle becomes larger to avoid the problem of halation formation, color mixing or uneven brightness, if it is applied to the liquid crystal panel On the polar body backlight module, the light mixing of the direct type backlight module can also be avoided. The length of the dark lines of the distance and side-lit backlight modules.
為證實本發明之功效，以下列舉一實驗例並對實驗結果進行檢測。 In order to confirm the efficacy of the present invention, an experimental example is enumerated below and the experimental results are examined.
實驗一experiment one
先將清洗後的一個氮化鎵系列發光二極體晶片放置到一個高溫爐的低溫區內，並將放置在船型坩堝的銦粒(99.99%)放置到高溫爐的高溫區內。實驗中使用的氮化鎵系列發光二極體是由N-GaN層、MQW發光層、P-GaN層構成。然後抽真空，再通入氬氣回復常壓。然後，持續通入25sccm的氨氣(NH3)，再將高溫區溫度控制在500℃~600℃、低溫區溫度控制在250℃~350℃。隨著氨氣與銦粒反應，會逐漸在氮化鎵系列發光二極體晶片表面沉積並成長一層薄膜(沉積時間約5小時)。然後進行以下檢測，來確定所成長的薄膜是否為氮化銦。 A cleaned gallium nitride series light-emitting diode wafer was first placed in a low temperature zone of a high temperature furnace, and indium particles (99.99%) placed on the ship's crucible were placed in a high temperature zone of the high temperature furnace. The gallium nitride-based light-emitting diode used in the experiment was composed of an N-GaN layer, an MQW light-emitting layer, and a P-GaN layer. Then, a vacuum is applied, and argon gas is introduced to return to normal pressure. Then, 25 sccm of ammonia gas (NH 3 ) is continuously supplied, and the temperature in the high temperature zone is controlled at 500 ° C to 600 ° C, and the temperature in the low temperature zone is controlled at 250 ° C to 350 ° C. As the ammonia gas reacts with the indium particles, a film is deposited and grown on the surface of the gallium nitride series light-emitting diode wafer (deposition time is about 5 hours). The following test is then performed to determine if the grown film is indium nitride.
檢測一Test one
將實驗一所得的薄膜藉由掃描式電子顯微鏡(SEM)測量，得到圖4。從圖4可確定有類似島狀的晶粒附著在氮化鎵系列發光二極體晶片表面，其大小約500nm。 The film obtained in Experiment 1 was measured by a scanning electron microscope (SEM) to obtain FIG. It can be confirmed from Fig. 4 that the island-like crystal grains are attached to the surface of the gallium nitride series light-emitting diode wafer, and the size thereof is about 500 nm.
檢測二Test two
然後對實驗一所得的薄膜進行X光繞射(XRD)測量，得到圖5。根據JCPDS-Card NO-50-1239得知圖5為氮化銦(InN)之XRD圖譜，且實驗一所得的氮化銦薄膜為六方晶系的纖鋅礦結構(wurtzite，WZ)。 The film obtained in Experiment 1 was then subjected to X-ray diffraction (XRD) measurement to obtain Figure 5. According to JCPDS-Card NO-50-1239, FIG. 5 shows an XRD pattern of indium nitride (InN), and the obtained indium nitride film of the first experiment is a hexagonal wurtzite structure (WZ).
實驗二Experiment 2
此外重複實驗一的步驟，先在氮化鎵系列發光二極體晶片表面沉積並成長一層氮化銦薄膜。在不移動氮化鎵系列發光二極體晶片的情形下，直接關掉氨氣，並持續抽真空將剩餘氣體抽空。之後，通入氬氣回復常壓，再通入25sccm的氧氣(O2)，並將低溫區204的溫度控制在250℃~350℃，來氧化氮化銦薄膜(氧化時間約2小時)。然後進行以下檢測，來確定氧化後的薄膜是否為氧化銦。 In addition, the procedure of the first experiment was repeated, and an indium nitride film was deposited and grown on the surface of the gallium nitride series light-emitting diode wafer. In the case where the gallium nitride series light-emitting diode wafer is not moved, the ammonia gas is directly turned off, and the remaining gas is evacuated by continuously evacuating. Thereafter, argon gas was introduced to return normal pressure, and then 25 sccm of oxygen (O 2 ) was introduced, and the temperature of the low temperature region 204 was controlled at 250 ° C to 350 ° C to oxidize the indium nitride film (oxidation time was about 2 hours). The following test is then performed to determine if the oxidized film is indium oxide.
檢測三Test three
將實驗二所得的薄膜藉由SEM測量，得到圖6。從圖6可確定氧化後的薄膜和圖4一樣依舊為類似島狀的晶粒，其大小約500nm。 The film obtained in Experiment 2 was measured by SEM to obtain Fig. 6. It can be confirmed from Fig. 6 that the oxidized film is still an island-like crystal grain as in Fig. 4, and has a size of about 500 nm.
檢測四Test four
藉由X光能譜分析儀(EDS)對實驗二所得的薄膜進行成分分析，得到下表一。 The composition of the film obtained in Experiment 2 was subjected to component analysis by X-ray energy spectrum analyzer (EDS) to obtain the following Table 1.
在表一中，銦(In)與氧(O)原子比例為1.0：2.7，因此推論形成氧化銦。至於鎵(Ga)和氮(N)為氮化鎵系列發光二極體晶片的組成元素，而碳(C)元素可能是高溫爐製程中的雜質。 In Table 1, the ratio of indium (In) to oxygen (O) atoms is 1.0:2.7, so it is inferred that indium oxide is formed. As for gallium (Ga) and nitrogen (N), it is a constituent element of a gallium nitride series light-emitting diode wafer, and the carbon (C) element may be an impurity in a high-temperature furnace process.
檢測五Test five
對實驗二所得的薄膜進行XRD測量，得到圖7。根據JCPDS-Card NO-06-0416得知圖7為氧化銦(In2O3)之XRD圖譜，且實驗二所得的氧化銦薄膜為立方體結構。 The film obtained in Experiment 2 was subjected to XRD measurement to obtain Fig. 7. According to JCPDS-Card NO-06-0416, FIG. 7 shows an XRD pattern of indium oxide (In 2 O 3 ), and the indium oxide film obtained in Experiment 2 has a cubic structure.
而且比較圖5與圖7可以明顯看出氮化銦經氧化置換後，氮化銦之繞射峰值消失不見，取而代之的是氧化銦的繞射峰值，因此表示經由實驗二的方法可成功將氮化銦氧化置換成氧化銦。 Moreover, comparing FIG. 5 with FIG. 7 , it can be clearly seen that after the ZnO is replaced by oxidation, the diffraction peak of the indium nitride disappears, and the diffraction peak of the indium oxide is replaced, thereby indicating that the nitrogen can be successfully obtained by the method of Experiment 2. Indium oxide is replaced by indium oxide.
檢測六Test six
取一個氮化鎵系列發光二極體晶片(無In2O3)以及一個已經完成實驗二的氮化鎵系列發光二極體晶片(有In2O3)進行電激發螢光光譜分析，得到圖8。 Take a gallium nitride-based light emitting diode chip (not In 2 O 3) has been completed, and a gallium nitride-based light emitting diode chip Experiment 2 (with In 2 O 3) is electrically excited fluorescence spectroscopy, to give Figure 8.
從圖8可之表面上形成有氧化銦微晶的氮化鎵系列發光二極體，其發光強度增加了約6倍。因此，由量測結果可知本發明的方法確實能增加氮化鎵系列發光二極體之發光效率。 A gallium nitride series light-emitting diode in which indium oxide crystallites are formed on the surface of Fig. 8 has an increase in luminous intensity of about 6 times. Therefore, it is known from the measurement results that the method of the present invention can actually increase the luminous efficiency of the gallium nitride series light-emitting diode.
綜上所述，本發明可利用簡單的製程，在氮化鎵系列發光二極體晶片上形成粗化氧化銦薄膜，且不移動氮化鎵系列發光二極體晶片就能完成所有製程，因此本發明形成粗化氧化銦薄膜的製程時間短。此外，本發明可利用高溫爐內之高溫區與低溫區之間的溫差，來控制氧化銦薄膜的尺寸。 In summary, the present invention can form a rough indium oxide film on a gallium nitride series light-emitting diode wafer by using a simple process, and can complete all processes without moving the gallium nitride series light-emitting diode wafer. The process time for forming the roughened indium oxide film of the present invention is short. In addition, the present invention can utilize the temperature difference between the high temperature zone and the low temperature zone in the high temperature furnace to control the size of the indium oxide film.
雖然本發明已以實施例揭露如上，然其並非用以限定 本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，故本發明之保護範圍當視後附之申請專利範圍所界定者為準。 Although the invention has been disclosed above by way of example, it is not intended to be limiting The scope of the present invention is defined by the scope of the appended claims, and the scope of the invention is defined by the scope of the appended claims. Prevail.
100‧‧‧基板 100‧‧‧Substrate
102‧‧‧氮化鎵發光二極體 102‧‧‧ gallium nitride light-emitting diode
104‧‧‧封裝材 104‧‧‧Package
106‧‧‧N-GaN層 106‧‧‧N-GaN layer
108、308‧‧‧發光層 108, 308‧‧‧Lighting layer
110‧‧‧P-GaN層 110‧‧‧P-GaN layer
112、114、312‧‧‧光 112, 114, 312‧‧‧ light
200‧‧‧高溫爐 200‧‧‧High temperature furnace
202‧‧‧高溫區 202‧‧‧High temperature zone
204‧‧‧低溫區 204‧‧‧low temperature zone
206‧‧‧部件 206‧‧‧ Parts
208‧‧‧加熱器 208‧‧‧heater
210‧‧‧進氣閥 210‧‧‧Intake valve
212‧‧‧排氣閥 212‧‧‧Exhaust valve
214、302‧‧‧氮化鎵系列發光二極體晶片 214, 302‧‧‧GaN Gallium Light Emitting Diode Wafer
214a、302a‧‧‧出光表面 214a, 302a‧‧‧ light surface
216‧‧‧銦粒 216‧‧‧Indium
218‧‧‧氮化銦氣體 218‧‧‧Indium nitride gas
220‧‧‧氮化銦層 220‧‧‧Indium nitride layer
222、304‧‧‧粗化氧化銦薄膜 222, 304‧‧‧ roughened indium oxide film
300‧‧‧氮化鎵系列發光二極體 300‧‧‧GaN series light-emitting diodes
306‧‧‧N型氮化鎵系層 306‧‧‧N-type gallium nitride layer
310‧‧‧P型氮化鎵系層 310‧‧‧P type gallium nitride layer
圖1為習知一種氮化鎵發光二極體元件之剖面示意圖。 1 is a schematic cross-sectional view of a conventional gallium nitride light emitting diode device.
圖2A至圖2D是依照本發明之一實施例之一種增加氮化鎵系列發光二極體之發光效率的製作流程示意圖。 2A-2D are schematic diagrams showing a manufacturing process for increasing the luminous efficiency of a gallium nitride series light-emitting diode according to an embodiment of the invention.
圖3是依照實施例之方法製作的氮化鎵系列發光二極體的剖面示意圖。 3 is a schematic cross-sectional view of a gallium nitride series light-emitting diode fabricated in accordance with the method of the embodiment.
圖4是實驗一所得的薄膜之掃描式電子顯微鏡(SEM)相片。 Figure 4 is a scanning electron microscope (SEM) photograph of the film obtained in Experiment 1.
圖5為實驗一所得的薄膜之X光繞射(XRD)圖。 Figure 5 is an X-ray diffraction (XRD) pattern of the film obtained in Experiment 1.
圖6是實驗二所得的薄膜之SEM相片。 Figure 6 is a SEM photograph of the film obtained in Experiment 2.
圖7為實驗二所得的薄膜之XRD圖。 Figure 7 is an XRD pattern of the film obtained in Experiment 2.
圖8是有/無In2O3的氮化鎵系列發光二極體晶片之電激發螢光光譜圖。 Figure 8 is an electrical excitation fluorescence spectrum of a gallium nitride series light-emitting diode wafer with/without In 2 O 3 .
200‧‧‧高溫爐 200‧‧‧High temperature furnace
202‧‧‧高溫區 202‧‧‧High temperature zone
204‧‧‧低溫區 204‧‧‧low temperature zone
210‧‧‧進氣閥 210‧‧‧Intake valve
214‧‧‧氮化鎵系列發光二極體晶片 214‧‧‧GaN Gallium Light Emitting Diode Wafer
214a‧‧‧出光表面 214a‧‧‧Lighting surface
216‧‧‧銦粒 216‧‧‧Indium
218‧‧‧氮化銦氣體 218‧‧‧Indium nitride gas
Claims (11)
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| 劉健業，"藉由在高溫爐後製成長氧化銦以提升氮化鎵藍色發光二極體效能之研究＂，國立海洋大學碩士論文，2009/07 * |
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