TWI417962B - Electrochemical deposition system - Google Patents
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本發明關於在半導體工件上沈積金屬層的系統，更具體地說，這個系統用於從電解液中電沈積或化學沈積金屬薄膜到半導體晶圓上，化學方法刻蝕部分沈積膜，清洗沈積膜表面以及對沈積膜進行熱處理。The present invention relates to a system for depositing a metal layer on a semiconductor workpiece, more specifically, for electrodepositing or chemically depositing a metal thin film from an electrolyte onto a semiconductor wafer, chemically etching a partially deposited film, and cleaning the deposited film. The surface and the deposited film are heat treated.
晶片間的互聯由多層金屬線達成，這些金屬線包埋於位於邏輯器件或記憶體件電晶體電路上方的一種或多種絕緣材料中。隨著超大型積體電路中線密度的增加，金屬線互連圖形的特徵尺寸，如通孔和溝槽等，已經降低到亞微米級，金屬化程度也隨之增加。而且，隨著積體電路中互連引線長度的增加，RC延遲也已經成為影響電路傳輸速度的最主要因素。銅由於其較低的電阻率和較高的抗電遷移，被認為是金屬互連引線的理想材料。但是同時，它也面臨著很多器件製造的挑戰。Inter-wafer interconnections are achieved by multiple layers of metal lines embedded in one or more insulating materials located above the logic device or memory device transistor circuit. As the line density in ultra-large integrated circuits increases, the feature sizes of metal interconnect patterns, such as vias and trenches, have been reduced to sub-micron levels, and the degree of metallization has increased. Moreover, as the length of the interconnect leads in the integrated circuit increases, the RC delay has become the most important factor affecting the transmission speed of the circuit. Copper is considered to be an ideal material for metal interconnect leads due to its low resistivity and high resistance to electromigration. But at the same time, it also faces many device manufacturing challenges.
達成銅互連技術，最大的挑戰在於透過大馬士革工藝，或者通常是透過加工成本可接受的雙大馬士革工藝，在整個半導體基材上，也就是在整片晶圓上，對通孔和溝槽等結構達成無孔、無縫的均勻填充。The biggest challenge in achieving copper interconnect technology is through the Damascus process, or through the double damascene process, which is usually cost-effective to process, through-holes and trenches on the entire semiconductor substrate, that is, on the entire wafer. The structure achieves a non-porous, seamless uniform fill.
典型的電沈積系統通常由多個用於金屬電沈積或化學沈積的電鍍單元和用於鍍後清洗和邊緣去除的清洗單元組成。A typical electrodeposition system typically consists of a plurality of plating units for metal electrodeposition or chemical deposition and a cleaning unit for post-plating cleaning and edge removal.
專利US6258220和專利US6527920揭示了這種電鍍系統的例子。這種系統包含一備有傳送機械手的主框架，一與主框架相連的裝載埠，多個與主框架相連的電鍍單元，多個與主框架相連的旋轉－沖洗－乾燥和邊緣去除腔，以及一和裝載埠相連的快速熱處理子系統。目前IC生產中所用的電沈積系統的電鍍單元、旋轉－沖洗－乾燥和邊緣去除腔及其它可能附加單元都處於同一平面上，這種設計佔據了超淨間的很大空間，才能滿足這種工藝系統對生產能力的要求。An example of such an electroplating system is disclosed in U.S. Patent No. 6,258,220 and U.S. Patent No. 6,527,920. The system comprises a main frame provided with a transfer robot, a loading cassette connected to the main frame, a plurality of plating units connected to the main frame, and a plurality of rotary-flushing-drying and edge removing chambers connected to the main frame. And a rapid thermal processing subsystem connected to the loading crucible. The electroplating unit, spin-flush-dry and edge removal chambers and other possible additional units of the electrodeposition system currently used in IC production are all on the same plane. This design occupies a large space in the ultra clean room to satisfy this. Process system requirements for production capacity.
因為這種系統用到的是一個二維的結構，它將所有的工藝單元都置於一個平面上，當需要添加一些新的工藝單元時，系統佔地面積增大，因而限制了其實際可擴展性。此外，在上述電沈積系統中，還需要多個立於工藝腔基底上的永久的重型支撐柱，用於支撐多個電鍍單元上部裝置，該裝置從機械手接收晶圓並將其送入電解液。這些支撐柱體積較大，因為它們需要為它們所支撐的上部裝置提供足夠的穩定性和堅固性，以便精確控制其運動。這些支撐柱不僅佔據了框架內部空間，而且限制了主框架傳送機械手，晶圓固持裝置和電鍍單元的可到達性，並給系統維護帶來不便。Because this system uses a two-dimensional structure, it puts all the process units on one plane. When some new process units need to be added, the system footprint increases, thus limiting its actual Scalability. In addition, in the above electrodeposition system, a plurality of permanent heavy-duty support columns standing on the substrate of the process chamber are required for supporting a plurality of plating unit upper devices, which receive the wafer from the robot and send it to the electrolysis liquid. These support columns are bulky because they require sufficient stability and robustness for the upper device they support to precisely control their motion. These support columns not only occupy the internal space of the frame, but also limit the accessibility of the main frame transfer robot, the wafer holding device and the plating unit, and bring inconvenience to system maintenance.
此外，隨著晶圓圖形中通孔和溝槽尺寸的減小，當由晶圓固持裝置所固持的晶圓浸入電解液時，晶圓上的結構很難被完全浸濕，從而導致沈積金屬膜結構上產生缺陷和空洞。一個潤濕晶圓的典型方法如專利US 2004/0069644 和US 2007/7223323所述，在電鍍前將晶圓在一個另外的旋轉－沖洗－乾燥單元中預潤洗。另一個潤濕晶圓的方法如專利US 2006/7146994所述，在晶圓送入電鍍液之前，用一個附加的噴嘴向晶圓表面上噴灑水。但是透過液體潤洗進行預濕仍不能完全潤濕非常細小的結構，而且用來潤洗的液體可能會在局部或很大範圍內將電解液稀釋，從而帶來新的問題。所以上述方法仍不能在不引入明顯的工藝變化或製造成本增加的情況下徹底解決不完全潤濕的問題。In addition, as the size of the vias and trenches in the wafer pattern is reduced, when the wafer held by the wafer holding device is immersed in the electrolyte, the structure on the wafer is difficult to be completely wetted, resulting in deposition of metal. Defects and voids are created in the membrane structure. A typical method of wetting a wafer is patent US 2004/0069644 As described in US 2007/7223323, the wafer is pre-flushed in an additional spin-flush-dry unit prior to electroplating. Another method of wetting a wafer is to spray water onto the surface of the wafer with an additional nozzle before the wafer is fed into the plating solution as described in US 2006/7146994. However, pre-wetting through liquid rinsing does not completely wet very fine structures, and the liquid used for rinsing may dilute the electrolyte locally or over a large range, posing new problems. Therefore, the above method still cannot completely solve the problem of incomplete wetting without introducing significant process variations or increased manufacturing costs.
本發明是在上述背景下揭示的。The present invention has been disclosed in the above background.
基於上述問題，本發明的目的是提供一種創新結構的電沈積系統，它佔地面積小，可以以更高的效率處理更大規模的晶圓，從而使生產能力得到提高。Based on the above problems, an object of the present invention is to provide an electrodeposition system of an innovative structure which has a small footprint and can process a larger-scale wafer with higher efficiency, thereby improving productivity.
為達成上述目的，本發明的電沈積系統具有三維堆疊結構，包含用於接收晶圓的工廠介面，備有主框架傳送機械手的主框架，多個置於主框架上方的晶圓固持裝置，多個置於主框架上部的三維堆疊結構第一層的電鍍單元，多個置於主框架下部的三維堆疊結構第二層的清洗和邊緣去除單元，多個置於主框架和工廠介面相連部分的第一層，或者第二層，或者兩層皆有的熱處理腔，多個置於主框架中的氣相預濕模組，為電鍍單元提供電鍍液和為清洗單元提供處理液的流體分配系統，為熱處理腔提供氣體混 合物的氣體傳輸系統。主框架傳送機械手在工廠介面，晶圓固持裝置，清洗單元和熱處理腔之間傳送晶圓。To achieve the above object, the electrodeposition system of the present invention has a three-dimensional stacked structure including a factory interface for receiving wafers, a main frame of a main frame transfer robot, and a plurality of wafer holding devices placed above the main frame. a plurality of electroplating units of the first layer of the three-dimensional stacked structure placed on the upper part of the main frame, a plurality of cleaning and edge removing units of the second layer of the three-dimensional stacked structure disposed at the lower part of the main frame, and a plurality of the connecting portions of the main frame and the factory interface The first layer, or the second layer, or both layers of the heat treatment chamber, a plurality of gas phase pre-wet modules placed in the main frame, providing plating solution for the plating unit and fluid distribution for the treatment unit System to provide gas mixing for the heat treatment chamber Gas delivery system. The main frame transfer robot transfers the wafer between the factory interface, the wafer holding device, the cleaning unit, and the thermal processing chamber.
與前面相關技術中提到的系統相比，本發明系統的一個優點是，它的三維堆疊結構具有更小的佔地面積，被一些工藝單元如電鍍單元佔據的面積可以節省下來，以更高的效率處理更大規模的晶圓，從而提高生產能力。本發明系統的另一優點是，當擴展新的工藝單元時，新增加的工藝單元在以前技術中只能置於唯一的一層，而在本發明中可以置於多層，因此不需要過多增加佔地面積。本發明系統的又一優點是，晶圓固持裝置置於主框架上方，排除了嚴重限制工具接近的大體積支撐柱的使用，而且還可以在進行用戶干涉操作時移到主框架的角落，從而方便了保養和維護的進行。Compared with the system mentioned in the related art, an advantage of the system of the present invention is that its three-dimensional stacked structure has a smaller footprint, and the area occupied by some process units such as the plating unit can be saved to be higher. The efficiency of processing larger wafers increases throughput. Another advantage of the system of the present invention is that when a new process unit is expanded, the newly added process unit can only be placed in a single layer in the prior art, and in the present invention can be placed in multiple layers, so that no excessive increase is required. Area. Yet another advantage of the system of the present invention is that the wafer holding device is placed over the main frame, eliminating the use of large volume support columns that severely limit tool access, and can also be moved to the corners of the main frame during user intervention operations, thereby Convenient for maintenance and maintenance.
本發明的電沈積系統的另一特性是，熱處理腔包含用於兩面加熱晶圓的加熱盤和熱流分配部件，用於兩面冷卻晶圓的冷卻盤和冷流分配部件，至少兩個接收並從加熱盤向冷卻盤傳送晶圓的晶圓固持裝置，至少兩個用於控制晶圓固持裝置運動的制動器。因此，本發明的系統可以提供均勻的鍍後熱處理工藝，從而提高雙面熱處理的晶圓上沈積膜的電學性能和物理性能，並且該熱處理腔可以同時對多個晶圓進行熱處理，從而使該系統的熱處理腔數量得到減少，生產能力得到提高。待加工的晶圓在處理前透過主框架機械手傳送到熱處理腔中的加熱盤，處理後透過前介面機械手從熱處理腔中的冷卻盤傳送出去，而不需要主框 架/工廠介面放置區，因此機械手的放置點減少了，提高了系統的傳送效率。Another feature of the electrodeposition system of the present invention is that the thermal processing chamber includes a heating plate and a heat flow distribution member for heating the wafer on both sides, and a cooling plate and a cold flow distribution member for cooling the wafer on both sides, at least two receiving and receiving A wafer holding device that transfers a wafer to a cooling disk, and at least two brakes for controlling the movement of the wafer holding device. Therefore, the system of the present invention can provide a uniform post-plating heat treatment process to improve the electrical and physical properties of the deposited film on the double-sided heat-treated wafer, and the heat treatment chamber can simultaneously heat treat a plurality of wafers, thereby The number of heat treatment chambers in the system is reduced and the production capacity is increased. The wafer to be processed is transferred to the heating plate in the heat treatment chamber through the main frame robot before processing, and then transmitted through the front interface robot through the cooling plate in the heat treatment chamber without the main frame. The rack/factory interface is placed in the area, so the placement point of the robot is reduced, which improves the transmission efficiency of the system.
本發明的電沈積系統的又一特性是，它還包含一個氣相預濕裝置，該裝置連接到一個蒸汽產生和傳輸系統，以達成液體分子從氣相中吸附到將要在電鍍單元中進行處理的晶圓前表面上。未鍍的晶圓前表面上的薄預濕層的吸附或液化的液體分子與電解液接觸。因此，本發明的系統可以提供可在具有極小結構的晶圓表面沈積銅膜而不至因為不完全潤濕而產生空洞的可靠性工藝。A further feature of the electrodeposition system of the present invention is that it further comprises a vapor phase pre-wet device coupled to a vapor generation and delivery system for effecting adsorption of liquid molecules from the gas phase to be processed in the plating unit On the front surface of the wafer. The adsorbed or liquefied liquid molecules of the thin pre-wet layer on the front surface of the unplated wafer are in contact with the electrolyte. Therefore, the system of the present invention can provide a reliability process that can deposit a copper film on the surface of a wafer having a very small structure without causing voids due to incomplete wetting.
本發明的新特點前面已述，本發明的結構和內容，以及其他目的和特點，可以透過以下詳細描述和與附圖關聯的示例進一步理解和認識。The novel features and advantages of the invention are set forth in the <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt;
如圖1和圖2所示，本發明的電沈積系統包含工廠介面10和主框架11。工廠介面包含置於1級環境中的多個晶圓裝載埠101、前介面機械手102、晶圓***191。主框架包含主框架傳送機械手106、多個電鍍單元107，多個清洗單元108、多個熱處理腔104和至少一個氣相預濕模組110。電鍍單元107和清洗單元108分別置於主框架11的第一層和第二層，電鍍單元107疊放於清洗單元108上方。熱處理腔104置於主框架11中並與工廠介面10相連。此外，該系統包含傳輸盒103和臨時儲存盒112，它們與工廠介面10相連並位於熱處理腔104上方。傳輸 盒103用於將晶圓從工廠介面10傳送到主框架11。臨時儲存盒112用於存放工藝腔出現問題時受到影響的晶圓。一旦出現這種情況，主框架傳送機械手106會將在整個電鍍工藝中進行了部分處理的晶圓放入臨時儲存盒112以待進一步的處理。系統還包含與工藝單元相連的流體分配系統，用於為電鍍單元提供電鍍液和為清洗單元提供化學液。系統還包含與熱處理腔相連的氣體混合傳輸系統，用於為熱處理腔提供混合的工藝氣體。As shown in FIGS. 1 and 2, the electrodeposition system of the present invention includes a factory interface 10 and a main frame 11. The factory interface includes a plurality of wafer loading cassettes 101, a front interface robot 102, and a wafer positioner 191 placed in a level 1 environment. The main frame includes a main frame transfer robot 106, a plurality of plating units 107, a plurality of cleaning units 108, a plurality of thermal processing chambers 104, and at least one gas phase pre-wetting module 110. The plating unit 107 and the cleaning unit 108 are respectively placed in the first layer and the second layer of the main frame 11, and the plating unit 107 is stacked above the cleaning unit 108. The thermal processing chamber 104 is placed in the main frame 11 and connected to the factory interface 10. In addition, the system includes a transfer case 103 and a temporary storage case 112 that are coupled to the factory interface 10 and are positioned above the thermal processing chamber 104. transmission The cartridge 103 is used to transfer wafers from the factory interface 10 to the main frame 11. The temporary storage box 112 is used to store wafers that are affected when problems occur in the process chamber. Once this occurs, the main frame transfer robot 106 places the wafers that have been partially processed throughout the plating process into the temporary storage box 112 for further processing. The system also includes a fluid distribution system coupled to the process unit for providing plating solution to the plating unit and chemical liquid for the cleaning unit. The system also includes a gas mixing transfer system coupled to the thermal processing chamber for providing a mixed process gas to the thermal processing chamber.
工廠介面10包含多個用於接收和放置晶圓盒192的裝載埠101，前介面機械手102和至少一個晶圓***191。在目前的實施例中，工廠介面10包含三個裝載埠101和晶圓***191。在電沈積工藝實施前，需在晶圓表面透過物理氣相沈積、化學氣相沈積或原子層沈積的方式沈積一薄導電層，這些前處理工藝完成以後，容納多個晶圓的晶圓盒192，更恰當的名稱是工業晶圓前開式晶圓盒，被傳送並放置在一個裝載埠101上。前介面機械手102是一種本領域一般技術人員通常都知道的典型的傳送機械手，由一或兩個機械臂組成。The factory interface 10 includes a plurality of loading cassettes 101 for receiving and placing wafer cassettes 192, a front interface robot 102 and at least one wafer positioner 191. In the current embodiment, the factory interface 10 includes three loading cassettes 101 and a wafer positioner 191. Before the electrodeposition process is implemented, a thin conductive layer is deposited on the surface of the wafer by physical vapor deposition, chemical vapor deposition or atomic layer deposition. After these pre-treatment processes are completed, the wafer cassette containing multiple wafers is completed. 192, a more appropriate name is an industrial wafer front open wafer cassette, which is transferred and placed on a loading cassette 101. The front interface robot 102 is a typical transfer robot commonly known to those of ordinary skill in the art and consists of one or two robot arms.
所有的工藝模組都位於主框架內部。如圖2所示，每個電鍍單元107位於清洗單元108的垂直上方。目前的實施例中，與裝載埠101的數量相對應，主框架11包含4個電鍍單元107和4個清洗單元108。應該瞭解的是，該電鍍系統的主框架11中的電鍍單元107的數量不僅限於目前的實施例。本領域一般技術人員可以根據所需的生產 能力增加或減少單元數量。應該注意的是，電鍍單元107和清洗單元108的堆疊結構為主框架11節省了空間，減少了該電沈積系統的佔地面積。在下面的規格中還應該注意到，該系統電鍍單元107堆疊在清洗單元108上方的三維結構可以在增加新的工藝單元時不過度增加佔地面積。All process modules are located inside the main frame. As shown in FIG. 2, each plating unit 107 is located vertically above the cleaning unit 108. In the present embodiment, the main frame 11 includes four plating units 107 and four cleaning units 108 corresponding to the number of loading cassettes 101. It should be understood that the number of plating units 107 in the main frame 11 of the plating system is not limited to the present embodiment. One of ordinary skill in the art can make the production according to the requirements. Ability to increase or decrease the number of units. It should be noted that the stacked structure of the plating unit 107 and the cleaning unit 108 saves space for the main frame 11, reducing the footprint of the electrodeposition system. It should also be noted in the following specifications that the three-dimensional structure in which the system plating unit 107 is stacked above the cleaning unit 108 can not excessively increase the footprint when adding a new process unit.
主框架11還包含多個晶圓固持裝置105，每個固持裝置置於電鍍單元107上方，裝在主框架11上。在本發明的電沈積系統的實施例中，與電鍍單元107的數量相對應，主框架11包含4個晶圓固持裝置105。The main frame 11 further includes a plurality of wafer holding devices 105, each of which is placed above the plating unit 107 and mounted on the main frame 11. In the embodiment of the electrodeposition system of the present invention, the main frame 11 includes four wafer holding devices 105 corresponding to the number of plating units 107.
如圖4所示，晶圓固持裝置105包含晶圓夾裝置，該晶圓夾裝置又包含晶圓夾511，陰極接觸(未示出)和制動器。該制動器可能包含步進電動機521，523和伺服電動機525。該陰極接觸可能包含多個軟不銹鋼彈簧圈以維持均勻的截面形狀，以改善與晶圓的電連接並減少由於機械接觸的壓縮應力而導致對下面膜的傷害。晶圓夾可能包含底部和頂部，晶圓被夾持在底部和頂部之間，因此晶圓夾裝置設置成可以開、關和旋轉晶圓夾，來***、移除和旋轉晶圓，並且陰極接觸置於晶圓夾底部和頂部之間，在電鍍工藝開始前晶圓夾被制動器關閉時可以達成與晶圓前面的電連接。接觸位置的電資訊被監控並反饋到控制系統。此外，晶圓固持裝置105可以移到主框架11的角落以方便性能維護。晶圓可以由晶圓夾511夾持並沿Z軸移動和沿X軸和Z軸旋轉，晶圓夾511由制動器的步進電動機521，523和伺服電動機525驅動。關於晶圓夾組成包 含晶圓夾和陰極接觸的詳細描述，可參考專利US06495007,名稱為“Methods and apparatus for holding and positioning semiconductor wafer during electropolishing and/or electroplating of the workpieces”，透過引用結合於此。本發明中，整個晶圓固持裝置由連接晶圓固持裝置105和主框架頂部的裝配臂527支撐。應該注意到，置於主框架頂部的晶圓固持裝置105的結構加強了主框架傳送機械手106到達晶圓固持裝置和電鍍單元的可到達性，而且由於不需要支撐柱而節省了空間。As shown in FIG. 4, the wafer holding device 105 includes a wafer holder device that in turn includes a wafer holder 511, a cathode contact (not shown), and a brake. The brake may include stepper motors 521, 523 and servo motor 525. The cathode contact may include a plurality of soft stainless steel coils to maintain a uniform cross-sectional shape to improve electrical connection to the wafer and reduce damage to the underlying film due to compressive stresses of mechanical contact. The wafer holder may contain a bottom and a top, and the wafer is sandwiched between the bottom and the top, so the wafer holder device is configured to open, close, and rotate the wafer holder to insert, remove, and rotate the wafer, and the cathode The contact is placed between the bottom and the top of the wafer holder, and an electrical connection to the front of the wafer can be achieved when the wafer holder is closed by the brake before the plating process begins. The electrical information of the contact location is monitored and fed back to the control system. In addition, the wafer holding device 105 can be moved to the corner of the main frame 11 to facilitate performance maintenance. The wafer can be held by the wafer holder 511 and moved along the Z axis and along the X and Z axes. The wafer holder 511 is driven by the brake stepping motors 521, 523 and the servo motor 525. About wafer clip assembly package For a detailed description of wafer-containing and cathode contacts, reference is made to US Pat. No. 6,460, 007, entitled "Methods and apparatus for holding and positioning semiconductor wafer during electropolishing and/or electroplating of the workpieces", which is incorporated herein by reference. In the present invention, the entire wafer holding device is supported by a mounting arm 527 that connects the wafer holding device 105 and the top of the main frame. It should be noted that the structure of the wafer holding device 105 placed on top of the main frame enhances the accessibility of the main frame transfer robot 106 to the wafer holding device and the plating unit, and saves space by eliminating the need for a support column.
主框架11還包含氣相預濕裝置，它可能被集成在晶圓固持裝置105上或者作為獨立模組存在(如圖所示)。預濕裝置與蒸汽發生系統相連，為晶圓前表面提供液態蒸汽並形成一層超薄的預濕層，從而改善了電鍍工藝中的潤濕性能。利用液態蒸汽可以完全潤濕一些通孔和溝槽等極小結構，並且不會對電鍍液造成明顯稀釋。因此本發明的系統可以滿足超大型積體電路中，排除由於線密度增加帶來的不完全潤濕造成的相關缺陷的要求。The main frame 11 also includes a vapor phase pre-wet device that may be integrated on the wafer holding device 105 or present as a separate module (as shown). The pre-wetting device is connected to the steam generation system to provide liquid vapor to the front surface of the wafer and form an ultra-thin pre-wet layer to improve the wetting performance in the plating process. The use of liquid steam completely wets very small structures such as vias and trenches without significant dilution of the plating bath. Therefore, the system of the present invention can satisfy the requirement of a related defect caused by incomplete wetting due to an increase in linear density in an ultra-large integrated circuit.
如圖3所示，在本實施例中，電鍍單元107包含一個電解液腔700。電解液腔700包含多個環形電極711和多個環形隔離牆713，環形隔離牆713將整個電解液腔700隔離成多個獨立區域，每個區域中有一個單獨的環形電極711。電極711由多個電源(未示出)應用不同的波形，不同的開關次序，或者在電鍍工藝中不同的時間分別控 制。As shown in FIG. 3, in the present embodiment, the plating unit 107 includes an electrolyte chamber 700. The electrolyte chamber 700 includes a plurality of annular electrodes 711 and a plurality of annular partition walls 713 that isolate the entire electrolyte chamber 700 into a plurality of separate regions, each having a separate annular electrode 711 therein. The electrode 711 is applied by a plurality of power sources (not shown) with different waveforms, different switching orders, or separately controlled at different times in the plating process. system.
關於所述電解液腔的詳細描述，可參考專利US06495007,名稱為“Methods and apparatus for holding and positioning semiconductor wafer during electropolishing and/or electroplating of the workpieces”，透過引用結合於此。For a detailed description of the electrolyte chamber, reference is made to US Pat. No. 6,460, 007, entitled "Methods and apparatus for holding and positioning semiconductor wafer during electropolishing and/or electroplating of the workpieces", which is incorporated herein by reference.
但是，本發明的電沈積系統的電解液腔700與前面相關技術中所述的電解液腔有一些不同。本發明的電沈積系統的電解液腔700被氣泡聚結裝置720隔離成一個接收下部補給電解液的下部腔體701和接收上部補給電解液的上部腔體702。However, the electrolyte chamber 700 of the electrodeposition system of the present invention is somewhat different from the electrolyte chamber described in the related art. The electrolyte chamber 700 of the electrodeposition system of the present invention is separated by a bubble coalescing device 720 into a lower chamber 701 that receives the lower replenishing electrolyte and an upper chamber 702 that receives the upper replenishing electrolyte.
電解液腔700的下部腔體701的每個獨立區域各有入口和出口與其相連。電解液透過泵從電解液槽(將在後面段落詳細描述)壓入電解液腔700的每個獨立區域，電解液從入口流入，從出口流出，最後返回所述電解液槽從而達成電解液腔700的下部腔體701的每個獨立區域中獨立的電解液循環。Each of the separate regions of the lower chamber 701 of the electrolyte chamber 700 has an inlet and an outlet connected thereto. The electrolyte is pumped through the pump from each of the electrolyte chambers (described in detail in the following paragraphs) into each individual region of the electrolyte chamber 700. The electrolyte flows from the inlet, exits the outlet, and finally returns to the electrolyte chamber to achieve the electrolyte chamber. A separate electrolyte circulates in each individual region of the lower chamber 701 of the 700.
上部腔體702的每個獨立區域有一個由LMFC(液體流量控制器)分別控制的電解液入口，所以上部腔體702的每個獨立區域中流向晶圓表面的電解液流速可以獨立控制。液體流量控制器都是耐酸耐蝕的。下部腔體701和上部腔體702都是由電絕緣的耐酸耐蝕材料，如PVC或PVDF製成或者包覆的。Each of the separate regions of the upper chamber 702 has an electrolyte inlet controlled by an LMFC (Liquid Flow Controller), so that the flow rate of electrolyte flowing to the wafer surface in each individual region of the upper chamber 702 can be independently controlled. The liquid flow controllers are acid and corrosion resistant. Both the lower chamber 701 and the upper chamber 702 are made of or coated with an electrically insulating, acid and corrosion resistant material such as PVC or PVDF.
氣泡聚結裝置720包含具有多個V形凹槽的錐形框架 和緊附在錐形框架上的多孔膜。氣泡聚結裝置720上方有管子與電鍍單元107外面相連。電鍍過程中電極711上生成的氣泡首先在V形凹槽中聚結並向上移動，然後透過所述管子移出腔體。Bubble coalescer 720 includes a tapered frame having a plurality of V-shaped grooves And a porous membrane attached to the tapered frame. A tube above the bubble coalescence device 720 is connected to the outside of the plating unit 107. The bubbles generated on the electrode 711 during the electroplating process first coalesce in the V-shaped groove and move upward, and then move out of the cavity through the tube.
清洗單元108包含腔體，該腔體有用於將晶圓傳入或傳出清洗單元108的窗口和置於腔體中間的晶圓固持部件，該固持部件可以在置於清洗單元108底部的制動器的作用下以10到4000rpm的速度旋轉。該晶圓固持部分包含3個將晶圓固定在清洗單元108中的支撐腳(PIN)，每個支撐腳上有一個可以透過旋轉啟動的機械夾子，每個支撐腳頂部有小角度的台階。當晶圓固持部件旋轉，機械夾子關閉並將晶圓緊固，防止晶圓和支撐腳之間相對運動；當晶圓固持部分停止旋轉，機械夾子打開，晶圓可以被主框架傳送機械手拿起。The cleaning unit 108 includes a cavity having a window for passing the wafer into or out of the cleaning unit 108 and a wafer holding member disposed intermediate the cavity, the holding member being at a brake placed at the bottom of the cleaning unit 108 Rotate at a speed of 10 to 4000 rpm. The wafer holding portion includes three support pins (PINs) for fixing the wafers in the cleaning unit 108. Each support leg has a mechanical clip that can be rotated and activated, and each support leg has a small angle step on the top. When the wafer holding member rotates, the mechanical clip is closed and the wafer is fastened to prevent relative movement between the wafer and the support leg; when the wafer holding portion stops rotating, the mechanical clip is opened, and the wafer can be taken by the main frame transfer robot Start.
清洗單元108具有前噴嘴、後噴嘴、可移動噴嘴。前噴嘴置於清洗單元108腔體上部並從中延伸出來，為晶圓前表面提供去離子水。後噴嘴置於清洗單元108腔體下部並從中延伸出來，為晶圓後表面提供去離子水。可移動噴嘴置於清洗單元108腔體中部並可以徑向移動到晶圓邊緣，在工作時為晶圓邊緣提供混合的酸和過氧化物，在晶圓傳送時從清洗腔體中間移開。可移動噴嘴的運動由制動器控制。清洗單元108還包含置於腔體頂部用於阻止流體濺出清洗單元並污染本系統部件的蓋子。關於所述清洗單元108的詳細描述，可參考專利WO 03/087436,名稱為 “Electropolishing and/or electroplating apparatus and methods”，透過引用結合於此。The cleaning unit 108 has a front nozzle, a rear nozzle, and a movable nozzle. The front nozzle is placed in the upper portion of the chamber of the cleaning unit 108 and extends therefrom to provide deionized water to the front surface of the wafer. A rear nozzle is placed in the lower portion of the chamber of the cleaning unit 108 and extends therefrom to provide deionized water to the rear surface of the wafer. The movable nozzle is placed in the middle of the cavity of the cleaning unit 108 and can be moved radially to the edge of the wafer to provide mixed acid and peroxide to the edge of the wafer during operation, moving away from the cleaning chamber during wafer transfer. The movement of the movable nozzle is controlled by a brake. The cleaning unit 108 also includes a lid that is placed on top of the chamber to prevent fluid from spilling out of the cleaning unit and contaminating components of the system. For a detailed description of the cleaning unit 108, reference is made to patent WO 03/087436, entitled "Electropolishing and/or electroplating apparatus and methods", incorporated herein by reference.
主框架11還包含流體分配系統，該系統包含置於主框架11底部的電解液槽109，該槽為每個電鍍單元107提供電解液。如圖6所示，電解液槽109被隔離成下部電解液槽191b和上部電解液槽192b。下部電解液槽191b連接到電鍍單元107下部腔體，為電鍍單元107提供下部單元補給電解液，上部電解液槽192b連接到電鍍單元107上部腔體，為電鍍單元107提供上部單元補給電解液。下部電解液槽191b和上部電解液槽192b分別透過電解液供應線路311和321b連接到電鍍單元107，電解液供應線路上有泵313、兩通閥315、止回閥316、控制閥312。更適宜的是，連接電解液槽109和電鍍單元107的電解液線路中，接入過濾器317來過濾雜質和可模擬輸出的流量計314來監測流速。電解液槽109有溫度感測器和冷卻器來維持下部電解液槽和上部電解液槽中的電解液溫度在固定水準。下部電解液槽和上部電解液槽透過兩個附加的管子321分別連接到量測工具351上，為監測下部電解液槽和上部電解液中電解液成分濃度的量測工具351提供電解液試樣。The main frame 11 also includes a fluid dispensing system that includes an electrolyte bath 109 disposed at the bottom of the main frame 11 that provides electrolyte to each plating unit 107. As shown in FIG. 6, the electrolytic solution tank 109 is isolated into a lower electrolytic solution tank 191b and an upper electrolytic solution tank 192b. The lower electrolyte tank 191b is connected to the lower chamber of the plating unit 107, and the lower unit supply electrolyte is supplied to the plating unit 107. The upper electrolyte tank 192b is connected to the upper chamber of the plating unit 107, and the upper unit is supplied with electrolyte for the plating unit 107. The lower electrolyte tank 191b and the upper electrolyte tank 192b are connected to the plating unit 107 through the electrolyte supply lines 311 and 321b, respectively. The electrolyte supply line has a pump 313, a two-way valve 315, a check valve 316, and a control valve 312. More preferably, in the electrolyte circuit connecting the electrolyte tank 109 and the plating unit 107, the filter 317 is connected to filter the impurities and the flow meter 314 which can simulate the output to monitor the flow rate. The electrolyte tank 109 has a temperature sensor and a cooler to maintain the electrolyte temperature in the lower electrolyte tank and the upper electrolyte tank at a fixed level. The lower electrolyte tank and the upper electrolyte tank are respectively connected to the measuring tool 351 through two additional tubes 321, and the electrolyte sample is provided for the measuring tool 351 for monitoring the concentration of the electrolyte component in the lower electrolyte tank and the upper electrolyte. .
流體分配系統還包含化學槽330，酸和過氧化物在其中均勻混合，然後被提供給清洗單元108中的可移動噴嘴。化學槽330透過管子352連接到量測工具351，為監測混合化學品成分濃度的量測工具351提供酸和過氧化 物混合的化學品試樣。化學槽330中的混合化學品透過泵353和串列的閥(可能包含兩通手動閥355、控制閥352b、兩通氣動閥359)傳輸到清洗單元108中的可移動噴嘴，用於去除電鍍後的晶圓邊緣上的沈積金屬。更適宜的是，連接化學槽330和清洗單元108的管路中，接入過濾器357來過濾雜質和模擬輸出的流量計354來監測流速。The fluid dispensing system also includes a chemical tank 330 in which the acid and peroxide are uniformly mixed and then supplied to a movable nozzle in the cleaning unit 108. The chemical tank 330 is connected to the measuring tool 351 through a pipe 352 to provide acid and peroxidation to the measuring tool 351 for monitoring the concentration of the mixed chemical component. A sample of the chemical mixed. The mixed chemical in the chemical tank 330 is transferred to the movable nozzle in the cleaning unit 108 through the pump 353 and the series of valves (possibly including the two-way manual valve 355, the control valve 352b, the two-way pneumatic valve 359) for removing the plating. The deposited metal on the edge of the wafer. More preferably, in the line connecting the chemical tank 330 and the cleaning unit 108, a filter 357 is inserted to filter the impurities and the analog output flow meter 354 to monitor the flow rate.
本發明的系統還包含定量給料系統361。定量給料系統361連到電控模組(將在下文詳細描述)，將根據操作人員的運算和量測工具351的分析結果為電解液槽109的下部槽和上部槽供給所需量的金屬離子或有機添加劑，以保證電鍍液穩定的電沈積性能和混合化學品的邊緣去除性能。The system of the present invention also includes a dosing system 361. The dosing system 361 is connected to the electronic control module (described in detail below), and supplies the required amount of metal ions to the lower and upper grooves of the electrolyte tank 109 according to the calculation result of the operator's calculation and measurement tool 351. Or organic additives to ensure stable electrodeposition of the plating solution and edge removal properties of the mixed chemicals.
如圖5所示，本實施例中包含兩個熱處理腔104，兩腔平行佈置於主框架11中，並與工廠介面10相連。更適宜的是，熱處理腔104包含具有兩個窗口的矩形腔體，一面向主框架11的窗口為加熱單元窗口421，另一面向工廠介面10的窗口為冷卻單元窗口423。熱處理腔104還包含，位於鄰近加熱單元窗口421的腔體中的加熱盤411，位於鄰近冷卻單元窗口423的腔體中的冷卻盤413，兩個分別位於加熱盤411和冷卻盤413對面的晶圓固持裝置431，433。晶圓固持裝置431，433用於接收主框架傳送機械手106傳送過來的晶圓，將其裝載到加熱盤411或冷卻盤413上，由加熱盤411傳送至冷卻盤413，並傳送至前介面機械手102。晶圓固持裝置431或433包含一支 撐臂439，支撐臂連接一驅動器438，驅動器由兩個步進電動機(或伺服電動機)組成。該固持裝置還配置有一包含數個支撐爪的支撐環437。熱處理腔104的晶圓固持裝置431在驅動器438的控制下可旋轉或垂直移動。熱處理腔104還包含一個蓋子441，蓋子441上配有兩個流體分配部件448，449，一流體管道與流體分配部件448和449相連。流體分配部件448，449位於加熱盤411和冷卻盤413上方，為熱處理腔提供所需流體，例如N2 和H2 的混合物。位於加熱盤411上方的流體分配部件448提供熱流體到晶圓前表面，與加熱盤對晶圓背面的加熱一起，達成對晶圓的雙面加熱。位於冷卻盤413上方的流體分配部件449提供冷流體到晶圓前表面，與冷卻盤對晶圓背面的冷卻一起，達成對晶圓的雙面冷卻。這種雙面的熱處理機制提供了一個均勻的熱處理工藝，減小了熱應力所導致的晶圓的彎曲變形，且其能同時對多片晶圓進行熱處理，極大提高了熱處理腔的效率和產量。As shown in FIG. 5, in the present embodiment, two heat treatment chambers 104 are included, and the two chambers are arranged in parallel in the main frame 11 and connected to the factory interface 10. More preferably, the thermal processing chamber 104 includes a rectangular cavity having two windows, a window facing the main frame 11 being the heating unit window 421 and the other facing the factory interface 10 being the cooling unit window 423. The heat treatment chamber 104 further includes a heating plate 411 located in a cavity adjacent to the heating unit window 421, a cooling plate 413 located in a cavity adjacent to the cooling unit window 423, and two crystals respectively located opposite the heating plate 411 and the cooling plate 413. Round holding devices 431, 433. The wafer holding device 431, 433 is configured to receive the wafer transferred by the main frame transfer robot 106, load it onto the heating plate 411 or the cooling plate 413, transfer it from the heating plate 411 to the cooling plate 413, and transfer it to the front interface. Robot 102. The wafer holding device 431 or 433 includes a support arm 439 that is coupled to a driver 438 that is comprised of two stepper motors (or servo motors). The holding device is also provided with a support ring 437 comprising a plurality of support claws. The wafer holding device 431 of the thermal processing chamber 104 is rotatable or vertically movable under the control of the driver 438. The thermal processing chamber 104 also includes a cover 441 having two fluid distribution members 448, 449 disposed thereon, a fluid conduit coupled to the fluid distribution members 448 and 449. The fluid distribution member 448, 449 positioned above the heating plate 411 and cooling plate 413, heat treatment to provide the desired fluid lumen, for example a mixture of N 2 and H 2. A fluid dispensing component 448 located above the heating plate 411 provides hot fluid to the front surface of the wafer, along with heating of the wafer backside by the heating pad, to achieve double-sided heating of the wafer. A fluid dispensing component 449 located above the cooling plate 413 provides cold fluid to the front surface of the wafer, along with cooling of the cooling disk to the backside of the wafer, to achieve double-sided cooling of the wafer. This double-sided heat treatment mechanism provides a uniform heat treatment process that reduces the bending deformation of the wafer caused by thermal stress, and it can heat treat multiple wafers at the same time, greatly improving the efficiency and yield of the heat treatment chamber. .
在主框架11的背面還包含一電控模組。電控模組的系統框圖如圖7所示。電控模組一般包含一主機，其用戶介面將電控模組、機械手控制系統、電動機驅動系統、I/O介面板和電鍍系統電源控制板連接在一起。主機是電控模組的關鍵控制設備，它提供了所有的I/O埠，RS232埠和運動控制板。主機透過I/0介面板向所有需要透過控制信號進行流量控制的工藝單元傳輸信號，例如電鍍單元中的電解液流量控制和清洗單元噴嘴中去離子水和酸的流量 控制。與I/0介面板和電鍍單元107電氣連接的電鍍系統電源控制板，為電鍍單元107的高能耗提供可調的高電壓/電流。主機透過機械手控制系統傳輸控制參數信號，來控制主框架傳送機械手和前介面機械手。然而，機械手控制系統也可能是一台透過RS232埠與主機相通的獨立電腦，因此即使沒有主機，機械手控制系統仍然可以控制主框架傳送機械手和前介面機械手。電動機驅動系統分別將主機和電鍍單元、清洗單元和熱處理腔的伺服/步進電動機電氣相連，傳輸從主機運動控制板到熱處理腔、清洗單元和電鍍單元的伺服/步進電動機的控制信號，和伺服/步進電動機反饋回主機的編碼信號。An electronic control module is further included on the back of the main frame 11. The system block diagram of the electronic control module is shown in Figure 7. The electronic control module generally includes a host, and the user interface connects the electronic control module, the robot control system, the motor drive system, the I/O interface panel, and the electroplating system power control board. The mainframe is the key control device for the electronic control module, which provides all I/O ports, RS232 ports and motion control boards. The host transmits signals to all process units that need flow control through the control signal through the I/O interface panel, such as electrolyte flow control in the plating unit and flow of deionized water and acid in the cleaning unit nozzle. control. An electroplating system power control panel electrically coupled to the I/O interface panel and plating unit 107 provides an adjustable high voltage/current for the high energy consumption of the plating unit 107. The host transmits control parameter signals through the robot control system to control the main frame transfer robot and the front interface robot. However, the robot control system may also be a stand-alone computer that communicates with the host via RS232, so the robot control system can control the main frame transfer robot and the front interface robot even without the main unit. The motor drive system electrically connects the main body to the plating/stepping motor of the plating unit, the cleaning unit and the heat treatment chamber, and transmits control signals of the servo/stepping motor from the main body motion control board to the heat treatment chamber, the cleaning unit and the plating unit, and The servo/stepper motor feeds back the encoded signal of the host.
應該注意的是，整個電沈積工藝應該在一個潔淨的環境中進行，因此更為適宜的是本發明的系統被面板封閉起來。面板上配有透明的窗口，從而使電沈積工藝能在操作者的監控下進行。面板是可移動的或者配置有開口以便於性能維護。It should be noted that the entire electrodeposition process should be carried out in a clean environment, so it is more desirable that the system of the present invention is enclosed by a panel. The panel is fitted with a transparent window so that the electrodeposition process can be carried out under the supervision of the operator. The panels are removable or configured with openings for performance maintenance.
操作過程中，前介面機械手102將一片晶圓從晶圓盒192傳送到晶圓***191。***191接收晶圓後將其旋轉至一預先設定好的方位，以便接下來的工藝中晶圓可以被精確控制。晶圓定位完成後，前介面機械手102將晶圓傳送至晶圓傳輸盒103以供進一步傳送到主框架11。During operation, the front interface robot 102 transfers a wafer from the wafer cassette 192 to the wafer positioner 191. The positioner 191 receives the wafer and rotates it to a predetermined orientation so that the wafer can be precisely controlled in the next process. After the wafer positioning is completed, the front interface robot 102 transfers the wafer to the wafer transfer cassette 103 for further transfer to the main frame 11.
主框架傳送機械手106將一片晶圓從晶圓傳輸盒103中傳送至晶圓固持裝置105上，或者從主框架的電鍍單元107中傳送至清洗單元108中，或者從清洗單元108中傳 送至熱處理腔104中。機械手106是一種本領域一般技術人員通常都知道的由多個機械臂組成傳送機械手。在本實施例中，主框架傳送機械手106由兩個可獨立操作的機械臂組成。主框架傳送機械手106可以如圖2所示繞Z軸旋轉和上下垂直移動。主框架傳送機械手106的兩個機械臂可以透過控制而進行伸縮，用以將晶圓傳入或傳出電鍍單元107或清洗單元108，還可以翻轉晶圓以滿足不同工藝的要求，例如，在電鍍單元中，晶圓應該正面朝下放置，而在清洗單元中則需要正面朝上放置。The main frame transfer robot 106 transfers a wafer from the wafer transfer cassette 103 to the wafer holding device 105, or from the plating unit 107 of the main frame to the cleaning unit 108, or from the cleaning unit 108. It is sent to the heat treatment chamber 104. The robot 106 is a transfer robot composed of a plurality of robot arms as is generally known to those of ordinary skill in the art. In the present embodiment, the main frame transfer robot 106 is composed of two independently operable robot arms. The main frame transfer robot 106 can be rotated about the Z axis and vertically moved up and down as shown in FIG. The two robot arms of the main frame transfer robot 106 can be telescoped by control for transferring the wafers into or out of the plating unit 107 or the cleaning unit 108, and can also flip the wafers to meet different process requirements, for example, In the plating unit, the wafer should be placed face down, while in the cleaning unit it needs to be placed face up.
對於工藝過程，首先，晶圓固持裝置105停留在一接收位置，晶圓固持裝置105的晶圓夾511保持打開狀態。主框架傳送機械手106從位於主框架106和工廠介面10之間的傳輸盒103中拿起一片晶圓，翻轉使其正面朝下，並將其傳送至氣相預濕裝置，如圖所示，此氣相預濕裝置為獨立模組。氣相預濕裝置將蒸汽噴向晶圓前表面，並於其上形成一層預濕液薄膜。然後主框架機械手將晶圓傳送至晶圓固持裝置105的晶圓夾中，並置於晶圓固持裝置中的陰極接觸上。當主框架傳送機械手的機械臂收縮並移出晶圓固持裝置105以後，晶圓夾關閉並緊固晶圓使其與陰極彈簧緊密接觸。而且由於晶圓背面被完全密封，所以不會在電鍍過程中與電解液接觸。伺服電動機525開始旋轉，使得晶圓固持裝置105開始旋轉晶圓。步進電動機523轉動晶圓固持裝置105使之與Z軸成特定角度，然後步進電動機521沿著Z軸方向移動晶圓固持裝置105至預 定位置，使晶圓夾511的邊緣剛好沒過電鍍單元107的液位線。For the process, first, the wafer holding device 105 stays at a receiving position, and the wafer holder 511 of the wafer holding device 105 remains open. The main frame transfer robot 106 picks up a wafer from the transfer box 103 located between the main frame 106 and the factory interface 10, flips it face down, and transfers it to the gas phase pre-wet device as shown The gas phase pre-wet device is a separate module. The gas phase pre-wet device sprays steam onto the front surface of the wafer and forms a pre-wetting film thereon. The main frame robot then transfers the wafer to the wafer holder of the wafer holding device 105 and places it on the cathode contact in the wafer holding device. After the robotic arm of the main frame transfer robot contracts and moves out of the wafer holding device 105, the wafer holder closes and secures the wafer in close contact with the cathode spring. Moreover, since the back side of the wafer is completely sealed, it does not come into contact with the electrolyte during the plating process. The servo motor 525 begins to rotate, causing the wafer holding device 105 to begin rotating the wafer. The stepping motor 523 rotates the wafer holding device 105 to a specific angle with respect to the Z axis, and then the stepping motor 521 moves the wafer holding device 105 along the Z-axis direction to the pre-pre The position is such that the edge of the wafer holder 511 has not passed the liquid level line of the plating unit 107.
其後電動機523開始轉動晶圓固持裝置105回到垂直位置，並且將晶圓固持裝置105攜至電鍍單元107中，從而使得晶圓前表面與電解液腔700的上部腔體702中的電解液接觸。然後開始電鍍過程。透過控制多重陽極的波形、工作順序和時間以及電解液流速，可以在晶圓上沈積得到均勻的金屬薄膜。關於電鍍工藝的詳細描述，請參考專利US06391166，“plating apparatus and methods”，透過引用結合於此。Thereafter, the motor 523 begins to rotate the wafer holding device 105 back to the vertical position and carries the wafer holding device 105 into the plating unit 107, thereby causing the front surface of the wafer and the electrolyte in the upper chamber 702 of the electrolyte chamber 700. contact. Then start the plating process. By controlling the waveform of the multiple anodes, the sequence and timing of the operation, and the flow rate of the electrolyte, a uniform metal film can be deposited on the wafer. For a detailed description of the electroplating process, please refer to the patent US06391166, "plating apparatus and methods", which is incorporated herein by reference.
在另一實施例中，氣相預濕設備與晶圓固持裝置集成在一起。在工藝過程中，主框架機械手從傳輸盒中拿起晶圓並且將其傳送至晶圓固持裝置。在晶圓固持裝置將晶圓攜至電解液中之前，預濕裝置移入並向晶圓表面噴灑蒸汽。預濕過程完成後，晶圓固持裝置將晶圓攜至電解液中，進行與上述相同的電鍍過程。In another embodiment, the vapor phase pre-wet device is integrated with the wafer holding device. During the process, the main frame robot picks up the wafer from the transfer box and transfers it to the wafer holding device. The pre-wet device moves in and sprays steam onto the surface of the wafer before the wafer holding device carries the wafer into the electrolyte. After the pre-wetting process is completed, the wafer holding device carries the wafer into the electrolyte to perform the same plating process as described above.
電鍍過程完成後，晶圓固持裝置105往上移動，將晶圓從電鍍單元107的電解液中移出。晶圓固持裝置105移動到旋轉位置後，將攜帶晶圓高速旋轉以移除晶圓表面殘留的電解液。其後晶圓固持裝置105移至接收位置，晶圓夾511打開。主框架傳送機械手的機械臂伸入晶圓固持裝置105中，將晶圓移出並翻轉使其正面朝上。After the plating process is completed, the wafer holding device 105 moves upward to remove the wafer from the electrolyte of the plating unit 107. After the wafer holding device 105 is moved to the rotating position, the carrying wafer is rotated at a high speed to remove the residual electrolyte on the surface of the wafer. Thereafter, the wafer holding device 105 is moved to the receiving position, and the wafer holder 511 is opened. The robotic arm of the main frame transfer robot extends into the wafer holding device 105, moving the wafer out and flipping it face up.
然後主框架傳送機械手106向下移動，直到到達清洗單元108窗口的水平高度，主框架傳送機械手106伸展並 將晶圓送入清洗單元108。當晶圓被送入清洗單元108後，主框架傳送機械手106向下移動少許，將晶圓放置在清洗單元108的三個支撐腳上然後移出。用三個支撐腳固持晶圓的清洗單元108的晶圓固持部件在制動器的控制下開始旋轉。支撐腳上的機械夾啟動並緊固晶圓以防相對運動。然後清洗單元的前噴嘴啟動，並向晶圓前表面噴灑去離子設備中的去離子水，進行預濕並移除殘餘電鍍液。預濕後，清洗單元的可移動噴嘴移動到晶圓邊緣並向晶圓邊緣噴灑化學槽中的混合化學品進行邊緣沈積金屬的蝕刻去除。清洗單元108的晶圓固持部件高速旋轉以限制化學品在晶圓邊緣較窄的區域內，防止中間區域發生沈積膜蝕刻。當邊緣金屬膜完全去除後，可移動噴嘴從清洗單元中間移出，前噴嘴和後噴嘴啟動並向晶圓兩面噴灑去離子水，以清洗蝕刻的殘餘化學品。清洗工藝完成後，晶圓固持部件停止旋轉，機械夾打開。主框架傳送機械手106伸到清洗單元108中，拿起晶圓並將其移出清洗單元108。The main frame transfer robot 106 then moves down until reaching the level of the window of the cleaning unit 108, and the main frame transfer robot 106 is stretched and The wafer is fed to the cleaning unit 108. After the wafer is fed into the cleaning unit 108, the main frame transfer robot 106 is moved a little downward, and the wafer is placed on the three support legs of the cleaning unit 108 and then removed. The wafer holding member of the cleaning unit 108 holding the wafer with three support legs starts to rotate under the control of the brake. A mechanical clip on the support foot activates and secures the wafer against relative motion. The front nozzle of the cleaning unit is then activated and the deionized water in the deionization apparatus is sprayed onto the front surface of the wafer to pre-wet and remove the residual plating solution. After pre-wetting, the movable nozzle of the cleaning unit moves to the edge of the wafer and sprays the mixed chemicals in the chemical bath to the edge of the wafer for etch removal of the edge deposited metal. The wafer holding member of the cleaning unit 108 rotates at a high speed to limit the chemical in the narrower region of the wafer edge, preventing deposition film etching in the intermediate region. When the edge metal film is completely removed, the movable nozzle is removed from the middle of the cleaning unit, and the front and rear nozzles are activated and sprayed with deionized water on both sides of the wafer to clean the etched residual chemicals. After the cleaning process is completed, the wafer holding member stops rotating and the mechanical clamp opens. The main frame transfer robot 106 extends into the cleaning unit 108, picks up the wafer and moves it out of the cleaning unit 108.
當一片晶圓(第一片晶圓)的電鍍和清洗工藝完成後，主框架傳送機械手106將第一片晶圓透過加熱單元窗口421傳送到熱處理腔104，並將其放置在第一晶圓固持裝置433上。當主框架傳送機械手106的機械臂移出熱處理腔104，第一晶圓固持裝置433向下移動到預熱位置將第一片晶圓預熱一段預定時間。預熱處理後，第一晶圓固持裝置433向下移動並將晶圓放置到加熱盤411上，這樣晶圓就和加熱盤411接觸並加熱一段預定時間。一旦第一 片晶圓的加熱處理結束，第一晶圓固持裝置433向上移動並將晶圓傳送到冷卻盤413上進行冷卻處理。應該注意的是，冷卻盤413此時是空閒的。當第一片晶圓進行冷卻處理時，另一片已經進行了電鍍和清洗處理的晶圓(第二片晶圓)被主框架傳送機械手106傳送到熱處理腔104，被第二晶圓固持裝置431接收，並開始預熱和加熱處理。從而熱處理腔104同時對兩片晶圓進行熱處理。當第一片晶圓的冷卻處理結束後，第一晶圓固持裝置433向上移動並將其送到一個傳送區，前介面機械手102伸入並將晶圓傳送出熱處理腔104。此時冷卻盤413閒置下來。第二片晶圓的加熱處理完成後，第二晶圓固持裝置431將其傳送至冷卻盤413上進行冷卻處理。當第二片晶圓在進行冷卻處理時，又一片晶圓(第三片晶圓)被傳送到熱處理腔104，被第一晶圓固持裝置433接收並進行同樣的處理(預熱，加熱，冷卻處理)。上述在熱處理腔104中進行的工藝是假定加熱時間比冷卻時間長時才可以進行。如果冷卻時間比加熱時間長的話，本工藝不同之處將是，當第一片晶圓在加熱盤411上加熱時，第二片晶圓不能立刻傳送到熱處理腔104中，直到第一片晶圓的剩餘冷卻時間比加熱時間短。當一片晶圓的熱處理工藝完成後，晶圓被前介面機械手102透過冷卻單元窗口423傳送出熱處理腔104並被放置在晶圓盒192中，以待接下來的工藝步驟，比如化學機械抛光。After the plating and cleaning process of one wafer (the first wafer) is completed, the main frame transfer robot 106 transfers the first wafer through the heating unit window 421 to the thermal processing chamber 104 and places it in the first crystal. On the round holding device 433. When the robotic arm of the main frame transfer robot 106 moves out of the thermal processing chamber 104, the first wafer holding device 433 moves down to the preheating position to preheat the first wafer for a predetermined period of time. After the pre-heat treatment, the first wafer holding device 433 is moved downward and the wafer is placed on the heating plate 411 such that the wafer is brought into contact with the heating plate 411 and heated for a predetermined period of time. Once first After the heat treatment of the wafer is completed, the first wafer holding device 433 moves upward and transfers the wafer to the cooling tray 413 for cooling processing. It should be noted that the cooling disk 413 is now free. When the first wafer is cooled, another wafer (second wafer) that has been plated and cleaned is transferred to the thermal processing chamber 104 by the main frame transfer robot 106, and is held by the second wafer holding device. 431 receives and begins preheating and heat treatment. The heat treatment chamber 104 thus heats the two wafers simultaneously. After the cooling process of the first wafer is completed, the first wafer holding device 433 is moved upward and sent to a transfer area, and the front interface robot 102 projects and transfers the wafer out of the heat treatment chamber 104. At this time, the cooling disk 413 is idle. After the heat treatment of the second wafer is completed, the second wafer holding device 431 transfers it to the cooling tray 413 for cooling processing. When the second wafer is being cooled, another wafer (third wafer) is transferred to the thermal processing chamber 104, received by the first wafer holding device 433, and subjected to the same processing (preheating, heating, Cooling treatment). The above-described process in the heat treatment chamber 104 is performed assuming that the heating time is longer than the cooling time. If the cooling time is longer than the heating time, the difference in the process will be that when the first wafer is heated on the heating plate 411, the second wafer cannot be immediately transferred into the thermal processing chamber 104 until the first wafer The remaining cooling time of the circle is shorter than the heating time. After the heat treatment process of one wafer is completed, the wafer is transferred out of the thermal processing chamber 104 by the front interface robot 102 through the cooling unit window 423 and placed in the wafer cassette 192 for the next process step, such as chemical mechanical polishing. .
上述內容直接針對本發明的首選實施例，也可以設計 不背離本發明基本涵蓋範圍的其他及進一步實施例。本發明涵蓋範圍由申請專利範圍決定。The above is directed to the preferred embodiment of the present invention and can also be designed Other and further embodiments are possible without departing from the basic scope of the invention. The scope of the invention is determined by the scope of the patent application.
10‧‧‧工廠介面10‧‧‧Factory interface
11‧‧‧主框架11‧‧‧Main frame
101‧‧‧晶圓裝載埠101‧‧‧ Wafer loading埠
102‧‧‧前介面機械手102‧‧‧Pre-interface robot
103‧‧‧晶圓傳輸盒103‧‧‧ wafer transfer box
104‧‧‧熱處理腔104‧‧‧heat treatment chamber
105‧‧‧晶圓固持裝置105‧‧‧ wafer holding device
106‧‧‧主框架傳送機械手106‧‧‧Main frame transfer robot
107‧‧‧電鍍單元107‧‧‧ plating unit
108‧‧‧清洗單元108‧‧‧cleaning unit
109‧‧‧電解液槽109‧‧‧ electrolyte tank
110‧‧‧氣相預濕模組110‧‧‧ gas phase pre-wet module
112‧‧‧儲存盒112‧‧‧Storage box
191‧‧‧晶圓***191‧‧‧Wafer Locator
192‧‧‧晶圓盒192‧‧‧wafer box
191b‧‧‧下部電解液槽191b‧‧‧Lower electrolyte tank
192b‧‧‧上部電解液槽192b‧‧‧Upper electrolyte tank
311‧‧‧電解液供應線路311‧‧‧ electrolyte supply line
312‧‧‧控制閥312‧‧‧Control valve
313‧‧‧泵313‧‧‧ pump
314‧‧‧流量計314‧‧‧ Flowmeter
315‧‧‧兩通閥315‧‧‧Two-way valve
316‧‧‧止回閥316‧‧‧ check valve
317‧‧‧過濾器317‧‧‧Filter
321‧‧‧管子321‧‧‧ pipes
321b‧‧‧電解液供應線路321b‧‧‧ electrolyte supply line
330‧‧‧化學槽330‧‧‧Chemical tank
351‧‧‧量測工具351‧‧‧Measurement tools
352‧‧‧管子352‧‧‧ pipes
352b‧‧‧控制閥352b‧‧‧Control valve
353‧‧‧泵353‧‧‧ pump
354‧‧‧流量計354‧‧‧ flowmeter
355‧‧‧手動閥355‧‧‧Manual valve
357‧‧‧過濾器357‧‧‧Filter
359‧‧‧兩通氣動閥359‧‧‧Two-way pneumatic valve
361‧‧‧定量給料系統361‧‧‧Quantum feeding system
511‧‧‧晶圓夾511‧‧‧ wafer clip
521‧‧‧步進電動機521‧‧‧Stepper motor
523‧‧‧步進電動機523‧‧‧Stepper motor
525‧‧‧伺服電動機525‧‧‧Servo motor
411‧‧‧加熱盤411‧‧‧heating tray
413‧‧‧冷卻盤413‧‧‧Cooling plate
421‧‧‧加熱單元窗口421‧‧‧heating unit window
423‧‧‧冷卻單元窗口423‧‧‧Cooling unit window
431‧‧‧第二晶圓固持裝置431‧‧‧Second wafer holding device
433‧‧‧第一晶圓固持裝置433‧‧‧First wafer holding device
437‧‧‧支撐環437‧‧‧Support ring
438‧‧‧驅動器438‧‧‧ drive
439‧‧‧支撐臂439‧‧‧Support arm
441‧‧‧蓋子441‧‧‧ cover
448‧‧‧流體分配部件448‧‧‧Fluid distribution parts
449‧‧‧流體分配部件449‧‧‧ Fluid distribution parts
700‧‧‧電解液腔700‧‧‧ electrolyte chamber
701‧‧‧下部腔體701‧‧‧Lower cavity
702‧‧‧上部腔體702‧‧‧ upper cavity
711‧‧‧環形電極711‧‧‧ ring electrode
713‧‧‧隔離牆713‧‧‧The wall
720‧‧‧氣泡聚結裝置720‧‧‧ bubble coalescence device
圖1示出了本發明的電沈積系統的透視圖。Figure 1 shows a perspective view of an electrodeposition system of the present invention.
圖2示出了本發明的電沈積系統的側視圖。Figure 2 shows a side view of the electrodeposition system of the present invention.
圖3示出了本發明的電沈積系統的電鍍單元的透視圖。Figure 3 shows a perspective view of a plating unit of the electrodeposition system of the present invention.
圖4示出了本發明的電沈積系統的晶圓固持裝置的透視圖。Figure 4 shows a perspective view of a wafer holding device of the electrodeposition system of the present invention.
圖5示出了本發明的電沈積系統的熱處理模組的透視圖。Figure 5 shows a perspective view of a heat treatment module of the electrodeposition system of the present invention.
圖6示出了本發明的電沈積系統的流體分配系統的示意圖。Figure 6 shows a schematic diagram of a fluid dispensing system of an electrodeposition system of the present invention.
圖7示出了本發明的電沈積系統的電控系統的示意圖。Figure 7 shows a schematic diagram of an electronic control system of the electrodeposition system of the present invention.
10‧‧‧工廠介面10‧‧‧Factory interface
11‧‧‧主框架11‧‧‧Main frame
101‧‧‧晶圓裝載埠101‧‧‧ Wafer loading埠
102‧‧‧前介面機械手102‧‧‧Pre-interface robot
103‧‧‧晶圓傳輸盒103‧‧‧ wafer transfer box
104‧‧‧熱處理腔104‧‧‧heat treatment chamber
105‧‧‧晶圓固持裝置105‧‧‧ wafer holding device
106‧‧‧主框架傳送機械手106‧‧‧Main frame transfer robot
107‧‧‧電鍍單元107‧‧‧ plating unit
108‧‧‧清洗單元108‧‧‧cleaning unit
109‧‧‧電解液槽109‧‧‧ electrolyte tank
110‧‧‧氣相預濕模組110‧‧‧ gas phase pre-wet module
112‧‧‧儲存盒112‧‧‧Storage box
191‧‧‧晶圓***191‧‧‧Wafer Locator
192‧‧‧晶圓盒192‧‧‧wafer box
Claims (15)
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| TW097109869A TWI417962B (en) | 2008-03-20 | 2008-03-20 | Electrochemical deposition system |
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| US6261433B1 (en) * | 1998-04-21 | 2001-07-17 | Applied Materials, Inc. | Electro-chemical deposition system and method of electroplating on substrates |
| TW500835B (en) * | 1999-03-05 | 2002-09-01 | Applied Materials Inc | Electro-chemical deposition system |
| TW527633B (en) * | 2001-01-16 | 2003-04-11 | Nutool Inc | An integrated system for processing a plurality of wafers and a method of processing at least one wafer having a conductive front surface using an integrated wafer processing system |
| US20040182424A1 (en) * | 2003-03-17 | 2004-09-23 | Novellus Systems, Inc. | Active rinse shield for electrofill chemical bath and method of use |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6261433B1 (en) * | 1998-04-21 | 2001-07-17 | Applied Materials, Inc. | Electro-chemical deposition system and method of electroplating on substrates |
| TW500835B (en) * | 1999-03-05 | 2002-09-01 | Applied Materials Inc | Electro-chemical deposition system |
| TW527633B (en) * | 2001-01-16 | 2003-04-11 | Nutool Inc | An integrated system for processing a plurality of wafers and a method of processing at least one wafer having a conductive front surface using an integrated wafer processing system |
| US20040182424A1 (en) * | 2003-03-17 | 2004-09-23 | Novellus Systems, Inc. | Active rinse shield for electrofill chemical bath and method of use |
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