TWI417594B - Wafer level lens module and method for manufacturing same - Google Patents
Wafer level lens module and method for manufacturing same Download PDFInfo
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- TWI417594B TWI417594B TW97142144A TW97142144A TWI417594B TW I417594 B TWI417594 B TW I417594B TW 97142144 A TW97142144 A TW 97142144A TW 97142144 A TW97142144 A TW 97142144A TW I417594 B TWI417594 B TW I417594B
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Description
本發明涉及一種鏡頭模組,尤其涉及一種晶圓級(wafer level)鏡頭模組及其製造方法。 The present invention relates to a lens module, and more particularly to a wafer level lens module and a method of fabricating the same.
一般之鏡頭模組主要包括鏡片組、容納鏡片組之鏡筒、影像感測器和鏡座,影像感測器設置於鏡座內,鏡座容納可旋轉之鏡筒。當鏡片組成像於影像感測器上時,由旋轉鏡筒以改變鏡片組與影像感測器之間距,進而使光線聚焦於影像感測器上。惟,該鏡頭模組一般體積較大。 The general lens module mainly comprises a lens group, a lens barrel accommodating the lens group, an image sensor and a lens holder. The image sensor is disposed in the lens holder, and the lens holder accommodates the rotatable lens barrel. When the lens is formed on the image sensor, the lens barrel is rotated to change the distance between the lens group and the image sensor, so that the light is focused on the image sensor. However, the lens module is generally bulky.
科技迅速發展,市場上出現一種晶圓級鏡頭模組,其包括影像感測器、鏡片組及調整二者距離之間隔體,鏡片組、間隔體和影像感測器呈堆疊方式相互貼合,使得光線經鏡片組成像於影像感測器上。該鏡片組和影像感測器均採用積體電路工藝製造,因此,鏡頭模組具有較小之體積,使得其可應用於手機等小型電子設備上。 With the rapid development of technology, a wafer-level lens module has appeared on the market, which includes an image sensor, a lens group and a spacer for adjusting the distance therebetween. The lens group, the spacer and the image sensor are stacked in a stacking manner. The light is made through the lens to form on the image sensor. The lens group and the image sensor are both manufactured by an integrated circuit process. Therefore, the lens module has a small volume, so that it can be applied to small electronic devices such as mobile phones.
惟,由於晶圓級鏡頭模組之體積較小,於不增加體積之前提下,晶圓級鏡頭模組難以用微機電系統(Micro-Electro-Mechanism System,MEMS)或者音圈馬達(Voice coil motor,VCM)等外 加機構,使得鏡片組發生位移從而進行對焦。 However, due to the small size of the wafer-level lens module, it is difficult to use the Micro-Electro-Mechanism System (MEMS) or the voice coil motor (Voice coil) before the volume is increased. Motor, VCM) The mechanism is applied to cause the lens group to be displaced to focus.
有鑒於此,有必要提供一種不增加體積可實現對焦功能之晶圓級鏡頭模組及其製造方法。 In view of the above, it is necessary to provide a wafer level lens module and a method of manufacturing the same that can achieve focusing without increasing the volume.
一種晶圓級鏡頭模組,其包括影像感測器、鏡片組和壓電調整件,該壓電調整件疊加於該影像感測器上,該鏡片組疊加於該壓電調整件上且與該壓電調整件直接接觸,該壓電調整件具有平行該鏡片組光軸方向之形變量,該壓電調整件用來調整該影像感測器和該鏡片組之間之距離。 A wafer level lens module includes an image sensor, a lens group and a piezoelectric adjustment component, wherein the piezoelectric adjustment component is superimposed on the image sensor, and the lens group is superimposed on the piezoelectric adjustment component and The piezoelectric adjusting member is in direct contact, and the piezoelectric adjusting member has a shape variable parallel to an optical axis direction of the lens group, and the piezoelectric adjusting member is used for adjusting a distance between the image sensor and the lens group.
一種晶圓級鏡頭模組之製造方法,其包括:採用晶圓級製程於晶圓上形成影像感測器;於影像感測器上設置第一電極;於第一電極上形成由壓電材料製成之中空本體;於本體上設置第二電極,第二電極之極性與第一電極相反;將採用晶圓級製程形成之鏡片組貼合於第二電極上,光線經過鏡片組成像於影像感測器上。 A method for manufacturing a wafer level lens module, comprising: forming an image sensor on a wafer by using a wafer level process; providing a first electrode on the image sensor; forming a piezoelectric material on the first electrode a hollow body is formed; a second electrode is disposed on the body, the polarity of the second electrode is opposite to that of the first electrode; and the lens group formed by the wafer level process is attached to the second electrode, and the light is formed through the lens to form an image On the sensor.
本實施例之晶圓級鏡頭模組之壓電調整件於通電狀態下具有機械形變量,該機械形變量使得鏡片組和影像感測器之間距發生變化,壓電調整件直接與鏡片組相貼合,不增加鏡頭模組之體積,可使得光線正確聚焦於影像感測器上。 The piezoelectric adjusting member of the wafer level lens module of the embodiment has a mechanical shape variable in the energized state, and the mechanical shape variable changes the distance between the lens group and the image sensor, and the piezoelectric adjusting member directly faces the lens group. Fit, without increasing the size of the lens module, allows the light to focus correctly on the image sensor.
10‧‧‧晶圓級鏡頭模組 10‧‧‧ Wafer-level lens module
11‧‧‧鏡片組 11‧‧‧ lens group
12‧‧‧影像感測器 12‧‧‧Image sensor
13‧‧‧壓電調整件 13‧‧‧ Piezoelectric adjustment parts
14‧‧‧玻璃板 14‧‧‧ glass plate
111‧‧‧第一鏡片 111‧‧‧ first lens
112‧‧‧第二鏡片 112‧‧‧second lens
113‧‧‧間隔體 113‧‧‧ spacers
131‧‧‧本體 131‧‧‧Ontology
132‧‧‧正極 132‧‧‧ positive
133‧‧‧負極 133‧‧‧negative
圖1係本發明實施例晶圓級鏡頭模組之示意圖。 1 is a schematic diagram of a wafer level lens module in accordance with an embodiment of the present invention.
下面將結合附圖,對本發明作進一步之詳細說明。 The invention will be further described in detail below with reference to the accompanying drawings.
請參閱圖1,本發明實施例提供之晶圓級鏡頭模組10包括鏡片組11、影像感測器12、壓電調整件13和玻璃板14。 Referring to FIG. 1 , a wafer level lens module 10 according to an embodiment of the invention includes a lens group 11 , an image sensor 12 , a piezoelectric adjustment member 13 , and a glass plate 14 .
壓電調整件13位於鏡片組11和影像感測器12之間以調整二者之間距,玻璃板14覆蓋於影像感測器12上,其主要用以保護影像感測器12免於受到外界污染及水氣侵入。壓電調整件13直接貼合於鏡片組11和影像感測器12上。 The piezoelectric adjusting member 13 is located between the lens group 11 and the image sensor 12 to adjust the distance therebetween. The glass plate 14 covers the image sensor 12, and is mainly used to protect the image sensor 12 from the outside. Pollution and water intrusion. The piezoelectric adjustment member 13 is directly attached to the lens group 11 and the image sensor 12.
鏡片組11採用晶圓級製程於晶圓上製造而成,其包括第一鏡片111、第二鏡片112和間隔體113,間隔體113用來將第一鏡片111和第二鏡片112隔開一定距離。 The lens group 11 is fabricated on a wafer by a wafer level process, and includes a first lens 111, a second lens 112, and a spacer 113. The spacer 113 is used to separate the first lens 111 and the second lens 112. distance.
影像感測器12採用晶圓級製程於晶圓上製造而成,其為電荷耦合元件(Charge Coupled Device,CCD)或者互補金屬氧化物半導體元件(Complementary Metal Oxide Semiconductor,CMOS)。 The image sensor 12 is fabricated on a wafer by a wafer level process, which is a Charge Coupled Device (CCD) or a Complementary Metal Oxide Semiconductor (CMOS).
壓電調整件13包括本體131、設置於本體131上之正極132和負極133。本體131為圓柱形狀。正極132和負極133分別設置於本體131之相對之兩端。本體131具有平行鏡頭模組10光軸L之形變量,其材料為壓電晶體或者壓電陶瓷。其中,壓電晶體包括石英晶體、鎵酸鋰、鍺酸鋰、鍺酸鈦、鈮酸鋰或鉭酸鋰,壓電陶瓷包括鈦酸鋇、鋯鈦酸鉛、改性鋯鈦酸鉛、偏鈮酸鉛、鈮酸鉛鋇鋰或改性鈦酸鉛。 The piezoelectric adjusting member 13 includes a body 131, a positive electrode 132 and a negative electrode 133 disposed on the body 131. The body 131 has a cylindrical shape. The positive electrode 132 and the negative electrode 133 are respectively disposed at opposite ends of the body 131. The body 131 has a shape variable of the optical axis L of the parallel lens module 10, and the material thereof is a piezoelectric crystal or a piezoelectric ceramic. Among them, the piezoelectric crystal includes quartz crystal, lithium gallate, lithium niobate, titanium niobate, lithium niobate or lithium niobate, and piezoelectric ceramics include barium titanate, lead zirconate titanate, modified lead zirconate titanate, and partial Lead citrate, lead bismuth citrate or modified lead titanate.
本體131之機械形變與施加其上之電場強度E成正比例關係,可用下述簡單公式表示本體131之機械形變量與電場強度E之比例關係 :S=dE,S為本體131於某一電場強度E時之形變量,d為本體131之壓電常數。由上述公式可知:如果要使本體131發生一定之形變S時,可施加電場強度E為S/d之電場。 The mechanical deformation of the body 131 is proportional to the electric field strength E applied thereto, and the ratio of the mechanical deformation of the body 131 to the electric field strength E can be expressed by the following simple formula. :S=dE, S is the shape variable of the body 131 at a certain electric field strength E, and d is the piezoelectric constant of the body 131. It can be seen from the above formula that if a certain deformation S is to be caused to the body 131, an electric field having an electric field intensity E of S/d can be applied.
當給本體131施加一個與極化方向相同(或相反)之電場時,由於電場方向與極化方向相同(或相反),起著極化強度增大(或減小)之作用,使本體131引起沿極化方向增長(或縮短)之機械形變。 When an electric field of the same (or opposite) direction as the polarization direction is applied to the body 131, since the direction of the electric field is the same as (or opposite to) the polarization direction, the polarization intensity is increased (or decreased), so that the body 131 is made. Causes mechanical deformation that grows (or shortens) in the direction of polarization.
於正極132和負極133上施加電場,使得本體131平行光軸L方向之長度發生變化,本體131長度之變化使得壓電調整件13產生機械形變量,該形變量使得鏡片組11和影像感測器12之間距發生變化,壓電調整件13直接與鏡片組11相貼合,不增加鏡頭模組10之體積,可使得光線聚焦於影像感測器12上。 An electric field is applied to the positive electrode 132 and the negative electrode 133 such that the length of the body 131 in the direction parallel to the optical axis L changes, and the change in the length of the body 131 causes the piezoelectric adjusting member 13 to generate a mechanical deformation, which causes the lens group 11 and the image sensing The distance between the devices 12 changes, and the piezoelectric adjusting member 13 directly fits the lens group 11 without increasing the volume of the lens module 10, so that the light is focused on the image sensor 12.
於製造晶圓級鏡頭模組10之過程中,首先,採用晶圓級製程於晶圓上形成複數影像感測器12,於影像感測器12上覆蓋玻璃板14,然後於玻璃板14上沈積金屬層作為負極133,然後將由壓電材料製成之中空圓柱形本體131堆疊於負極133上,於本體131上沈積金屬層作為正極132,最後將採用晶圓級製程形成之鏡片組11貼合於正極132上,從而形成複數晶圓級鏡頭模組10,將其切割形成單個之晶圓級鏡頭模組10。 In the process of manufacturing the wafer level lens module 10, first, a plurality of image sensors 12 are formed on the wafer by a wafer level process, and the glass plate 14 is covered on the image sensor 12, and then on the glass plate 14. A metal layer is deposited as the negative electrode 133, and then a hollow cylindrical body 131 made of a piezoelectric material is stacked on the negative electrode 133, a metal layer is deposited on the body 131 as a positive electrode 132, and finally a lens group 11 formed by a wafer level process is attached. The positive wafer 132 is formed to form a plurality of wafer level lens modules 10, which are cut into individual wafer level lens modules 10.
當然,也可將金屬片貼於影像感測器12和本體131上作為負極133和正極132;或者將製作完成之壓電調整件13疊加於影像感測器12上。 Of course, the metal piece may be attached to the image sensor 12 and the body 131 as the negative electrode 133 and the positive electrode 132; or the fabricated piezoelectric adjustment member 13 may be superposed on the image sensor 12.
綜上所述,本發明確已符合發明專利之要件,遂依法提出專利申請。惟,以上所述者僅為本發明之較佳實施方式,自不能以此限制本案之申請專利範圍。舉凡熟悉本案技藝之人士爰依本發明之精神所作之等效修飾或變化,皆應涵蓋於以下申請專利範圍內。 In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.
10‧‧‧晶圓級鏡頭模組 10‧‧‧ Wafer-level lens module
11‧‧‧鏡片組 11‧‧‧ lens group
12‧‧‧影像感測器 12‧‧‧Image sensor
13‧‧‧壓電調整件 13‧‧‧ Piezoelectric adjustment parts
14‧‧‧玻璃板 14‧‧‧ glass plate
111‧‧‧第一鏡片 111‧‧‧ first lens
112‧‧‧第二鏡片 112‧‧‧second lens
113‧‧‧間隔體 113‧‧‧ spacers
131‧‧‧本體 131‧‧‧Ontology
132‧‧‧正極 132‧‧‧ positive
133‧‧‧負極 133‧‧‧negative
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TW97142144A TWI417594B (en) | 2008-10-31 | 2008-10-31 | Wafer level lens module and method for manufacturing same |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW449757B (en) * | 1999-05-24 | 2001-08-11 | Murata Manufacturing Co | Piezoelectric device |
CN1797053A (en) * | 2004-12-24 | 2006-07-05 | 鸿富锦精密工业(深圳)有限公司 | Lens die set |
TWI289352B (en) * | 2005-07-06 | 2007-11-01 | Asia Optical Co Inc | Micro lens and its manufacturing method |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW449757B (en) * | 1999-05-24 | 2001-08-11 | Murata Manufacturing Co | Piezoelectric device |
CN1797053A (en) * | 2004-12-24 | 2006-07-05 | 鸿富锦精密工业(深圳)有限公司 | Lens die set |
TWI289352B (en) * | 2005-07-06 | 2007-11-01 | Asia Optical Co Inc | Micro lens and its manufacturing method |
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