TWI415292B - Light emitting element having a nanometer stripe structure and a method of manufacturing the same - Google Patents
Light emitting element having a nanometer stripe structure and a method of manufacturing the same Download PDFInfo
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本發明係有關於一種發光元件及其製造方法，尤指一種具有奈米條狀結構之發光元件及其製造方法。The present invention relates to a light-emitting element and a method of manufacturing the same, and more particularly to a light-emitting element having a nano-strip structure and a method of manufacturing the same.
目前針對圖案化藍寶石基板(pattern sapphire substrate,PSS)之設計與製作，在很多國際的期刊中已有發表，此結構預期達到的效應除了藉由表面之非平整性來降低主動層出光的全反射角、增加出光效率以外，亦增加了很多表面面積(Sidewall－Surface)，此對於光取出效率的提昇有很大的貢獻。At present, the design and fabrication of patterned sapphire substrate (PSS) has been published in many international journals. The expected effect of this structure is to reduce the total reflection of the active layer by the non-flatness of the surface. In addition to the increase in light extraction efficiency, a large amount of surface area (Sidewall-Surface) is also added, which contributes greatly to the improvement of light extraction efficiency.
然而，大部分利用長晶的方式直接在圖案化藍寶石基板上成長很難獲得奈米等級之結構。例如：德國有利用有機金屬氣相磊晶(Meatalorganic Vapor Phase Epitaxy,MOVPE)的方式，直接成長氮化銦鎵(InGaN)量子井之微結構，但橫向最小的維度只能低至500 nm，且在光萃取效率上並沒有特別提升；台灣也有相關之研究利用感應耦合電漿蝕刻技術(Inductively Coupled Plasma,ICP)的方式製作藍寶石圖案化基板，並再利用雷射剝離技術將基板剝離後，將銅基板從另一面接合上，雖然能夠有效提升光萃取效率，然而以上這些製作方法太過於複雜且光萃取效率增加亦有限。However, it is difficult to obtain a nano-scale structure by growing a large amount of crystal growth directly on a patterned sapphire substrate. For example, Germany uses the method of Metallic Organic Vapor Phase Epitaxy (MOVPE) to directly grow the microstructure of an indium gallium nitride (InGaN) quantum well, but the lateral minimum dimension can only be as low as 500 nm, and There is no special improvement in light extraction efficiency; Taiwan has also studied the use of Inductively Coupled Plasma (ICP) to fabricate sapphire patterned substrates, and after using the laser stripping technology to peel off the substrate, Although the copper substrate is bonded from the other surface, although the light extraction efficiency can be effectively improved, the above manufacturing methods are too complicated and the light extraction efficiency is limited.
如美國專利第6580054號之「利用固態UV脈衝雷射雕刻藍寶石基板(Scribing sapphire substrates with a solid state UV laser)」，該篇專利利用UV脈衝雷射，藉由調整雷射之能量密度、雷射光點大小及脈衝週期來引發藍寶石基板之揮發作用，並刻繪出圖案於基板上。但並沒有針對此類基板作光萃取及成長奈米結構之相關應用。因此，利用圖案化藍寶石基板來製造三五族半導體之奈米結構元件以提升光萃取率於照明市場極具相當的潛力，在未來的應用上勢必會存在著技術移轉上的問題有鑑於此，本發明係針對上述之問題，提出一種具有奈米條狀結構之發光結構，利用該奈米條狀結構提升該發光結構之發光強度。For example, U.S. Patent No. 6,658,054, "Scribing sapphire substrates with a solid state UV laser", which uses UV pulsed lasers to adjust the energy density and laser light of the laser. The dot size and pulse period are used to initiate the volatilization of the sapphire substrate and the pattern is patterned on the substrate. However, there is no related application for such a substrate for light extraction and growth of nanostructures. Therefore, the use of patterned sapphire substrates to fabricate nano-structured components of the three-five semiconductors to enhance the light extraction rate has considerable potential in the lighting market. In the future applications, there will be problems in technology transfer. The present invention is directed to the above problems, and proposes a light-emitting structure having a nano-strip structure, and the nano-strip structure is used to enhance the luminous intensity of the light-emitting structure.
本發明之目的之一，在於提供一種具有奈米條狀結構之發光元件及其製造方法，利用有機金屬氣相磊晶製程將具有複數奈米條狀結構成長於圖案化基板上，而該些奈米條件結構不具有典型存在於三族氮化物半導體之差排現象，使發光元件增加發光強度。An object of the present invention is to provide a light-emitting element having a nano-strip structure and a method for fabricating the same, which are grown on a patterned substrate by an organic metal vapor phase epitaxial process. The nano-condition structure does not have a difference in the typical existence of the group III nitride semiconductor, so that the light-emitting element increases the luminous intensity.
本發明之目的之一，在於提供一種具有奈米條狀結構之發光元件及其製造方法，可應用於發光二極體上，進而有效提升發光二極體之發光效率。One of the objects of the present invention is to provide a light-emitting element having a nano-strip structure and a method of manufacturing the same, which can be applied to a light-emitting diode, thereby effectively improving the light-emitting efficiency of the light-emitting diode.
為達到上述目的，本發明係為一種具有奈米條狀結構之發光元件及其製造方法，該發光元件係至少具有一圖案化基板及一主動層。該圖案化基板係包含複數圖案，該主動層係設置於該圖案化基板上，並包含複數奈米條狀結構，分別排列於與該圖案化基板之該些圖案對應之頂端。In order to achieve the above object, the present invention is a light-emitting element having a nano-strip structure and a method of manufacturing the same, the light-emitting element having at least one patterned substrate and an active layer. The patterned substrate includes a plurality of patterns. The active layer is disposed on the patterned substrate and includes a plurality of nano strip structures arranged at top ends corresponding to the patterns of the patterned substrate.
而本發明之發光元件之製造方法係先取該圖案化基板，接著利用有機金屬氣相磊晶製程成長該主動層於該圖案化基板上，而該主動層為一量子井結構，並藉由控制有機金屬氣相磊晶製程之反應參數，使該主動層具有複數奈米條狀結構，並分別排列於與該圖案化基板之該些圖案對應之頂端。In the manufacturing method of the light-emitting device of the present invention, the patterned substrate is taken first, and then the active layer is grown on the patterned substrate by an organometallic vapor phase epitaxial process, and the active layer is a quantum well structure and controlled by The reaction parameters of the organometallic vapor phase epitaxial process are such that the active layer has a plurality of nano-bar structures and are respectively arranged on top ends corresponding to the patterns of the patterned substrate.
茲為使 貴審查委員對本發明之結構特徵及所達成之功效有更進一步之瞭解與認識，謹佐以較佳之實施例及配合詳細之說明，說明如後：請參閱第一A、一B及一C圖，係本發明之一較佳實施例之立體結構示意圖、本發明之一較佳實施例之正視結構示意圖及本發明之一較佳實施例之製造流程示意圖。如圖所示，本發明提供一種具奈米條狀結構之發光元件及其製造方法，本發明之發光元件1係包含一圖案化基板10及一主動層12，該圖案化基板10之材料係藍寶石，而該主動層12係一量子井結構，其材料係選自氮化鎵、氮化銦鎵及其他三族元素與五族元素所組成之化合物中擇其一者。In order to provide a better understanding and understanding of the structural features and the efficacies of the present invention, please refer to the preferred embodiment and the detailed description. For the following: please refer to the first A and B. Figure 1 is a perspective view of a preferred embodiment of the present invention, a schematic view of a front view of a preferred embodiment of the present invention, and a schematic diagram of a manufacturing process of a preferred embodiment of the present invention. As shown in the figure, the present invention provides a light-emitting element having a nano-strip structure and a method of fabricating the same. The light-emitting element 1 of the present invention comprises a patterned substrate 10 and an active layer 12, and the material of the patterned substrate 10 Sapphire, and the active layer 12 is a quantum well structure, the material of which is selected from the group consisting of gallium nitride, indium gallium nitride, and other compounds of the tri-family and five-element elements.
本實施例之發光元件1之製造方法係先執行步驟S10，取該圖案化基板10，該圖案化基板10係包含複數圖案，如第一B圖所示，從該圖案化基板10之前視方向觀之，該圖案為一梯形。然後執行步驟S12，利用有機金屬氣相磊晶製程成長該主動層12於該圖案化基板10上，因控制有機金屬氣相磊晶製程之溫度介於攝氏600度至攝氏900度之間，其壓力介於100托爾至400托爾之間，最後得到該主動層12之厚度係介於1nm至9nm之間，進而使該主動層12包含複數奈米條狀結構121，而該些奈米條狀結構121係設置於與該圖案化基板10之該些圖案對應之頂端，如第一B圖所示，該些奈米條狀結構121設置於該些圖案之頂端，亦於該些梯形之頂端；而該主動層12亦覆蓋該些圖案之兩側，亦於該些梯形之兩側。將上述發光元件1利用光致發光光譜測量系統(photoluminescence,PL)檢測該發光元件1可知，透過該些奈米條狀結構121可使該發光元件1之發光強度提高。In the manufacturing method of the light-emitting device 1 of the present embodiment, the step S10 is performed first, and the patterned substrate 10 is taken. The patterned substrate 10 includes a plurality of patterns, as shown in the first B-picture, from the front view direction of the patterned substrate 10. The pattern is a trapezoid. Then, in step S12, the active layer 12 is grown on the patterned substrate 10 by an organometallic vapor phase epitaxial process, and the temperature of the organometallic vapor phase epitaxial process is controlled between 600 degrees Celsius and 900 degrees Celsius. The pressure is between 100 Torr and 400 Torr, and finally the thickness of the active layer 12 is between 1 nm and 9 nm, so that the active layer 12 comprises a plurality of nano strip structures 121, and the nanometers The strip structures 121 are disposed at the top ends corresponding to the patterns of the patterned substrate 10. As shown in FIG. B, the nano strip structures 121 are disposed at the top ends of the patterns, and are also trapezoidal. The active layer 12 also covers both sides of the pattern, and is also on both sides of the trapezoids. When the light-emitting element 1 is detected by a photoluminescence spectrum measurement system (PL), it is understood that the light-emitting intensity of the light-emitting element 1 can be improved by transmitting the nano-strip structure 121.
請一併參閱第一D圖，係本發明之一較佳實施例之圖案化基板形成之流程示意圖。如圖所示，本發明之發光元件1所使用之該圖案化基板10之形成係先執行步驟S20，取一基板，接著執行步驟S22，沈積一遮罩層於該基板上，而該遮罩層係一二氧化矽薄膜，該遮罩層之厚度係介於200nm至2 μm之間，然後執行步驟S24，利用微影製程蝕刻該遮罩層，接著執行步驟S26，將該基板浸泡於磷酸進行濕式蝕刻，該基板進行濕式蝕刻之溫度係介於攝氏100度至攝氏400度之間，最後執行步驟S28，移除該遮罩層，進而形成該圖案化基板10。Please refer to the first D diagram, which is a schematic flow chart of the formation of a patterned substrate according to a preferred embodiment of the present invention. As shown in the figure, the patterned substrate 10 used in the light-emitting element 1 of the present invention is first formed in step S20, taking a substrate, and then performing step S22 to deposit a mask layer on the substrate, and the mask is formed. Laminating a cerium oxide film, the thickness of the mask layer is between 200 nm and 2 μm, and then performing step S24, etching the mask layer by a lithography process, and then performing step S26, immersing the substrate in phosphoric acid The wet etching is performed, and the temperature of the substrate is wet etching between 100 degrees Celsius and 400 degrees Celsius. Finally, step S28 is performed to remove the mask layer to form the patterned substrate 10.
請參閱第二A及二B圖，係本發明之另一較佳實施例之結構示意圖及本發明之另一較佳實施例之製造流程示意圖。如圖所示，本發明提供一種具奈米條狀結構之發光元件及其製造方法，本發明之發光元件1a係包含一圖案化基板10、一緩衝層11、一半導體層13、一主動層12及一匹覆層14，該圖案化基板10包含複數圖案，其材料係藍寶石。該緩衝層11係設於該圖案化基板10上，該緩衝層11之材料為氮化鎵，亦可選擇氮化鋁。然後該半導體層13係設於該緩衝層11上，該半導體層13之材料係氮化鎵，亦可選擇其他三族元素與五族元素所組成之化合物。接著該主動層12係設於該半導體層13上，該主動層12係一量子井結構，其材料係氮化銦鎵，而該主動層12係具有複數奈米條狀結構121，該些奈米條狀結構121係設置於對應該圖案化基板10之該些圖案之頂端。最後該匹覆層14係設於該主動層12上，該匹覆層14之材料係氮化鎵，亦可選擇其他三族元素與五族元素所組成之化合物。Please refer to FIG. 2A and FIG. 2B for a schematic view of a structure of another preferred embodiment of the present invention and a manufacturing process diagram of another preferred embodiment of the present invention. As shown in the figure, the present invention provides a light-emitting element having a nano-strip structure and a method of fabricating the same. The light-emitting element 1a of the present invention comprises a patterned substrate 10, a buffer layer 11, a semiconductor layer 13, and an active layer. 12 and a cladding layer 14, the patterned substrate 10 comprises a plurality of patterns, the material of which is sapphire. The buffer layer 11 is disposed on the patterned substrate 10. The material of the buffer layer 11 is gallium nitride, and aluminum nitride may also be selected. Then, the semiconductor layer 13 is disposed on the buffer layer 11. The material of the semiconductor layer 13 is gallium nitride, and a compound composed of other group III elements and group 5 elements may also be selected. The active layer 12 is then disposed on the semiconductor layer 13. The active layer 12 is a quantum well structure, the material of which is indium gallium nitride, and the active layer 12 has a plurality of nano strip structures 121. The strip-like structure 121 is disposed at the top end of the patterns corresponding to the patterned substrate 10. Finally, the cover layer 14 is disposed on the active layer 12. The material of the cover layer 14 is gallium nitride, and other compounds of the group III element and the group 5 element may be selected.
本實施例之發光元件1a之製造方法係先執行步驟S30，取該圖案化基板10，然後執行步驟S32，成長該緩衝層11於該圖案化基板10上，而成長該緩衝層11之溫度係介於攝氏500度至攝氏700度之間，該緩衝層11之厚度係介於20nm至50nm之間，本實施例之該緩衝層11之厚度係30nm，接著執行步驟S34，成長該半導體層13於該緩衝層11上，該半導體層13之厚度係1 μm，再執行步驟S36，利用有機金屬氣相磊晶製程成長該主動層12於該半導體層13上，因控制有機金屬氣相磊晶製程之溫度介於攝氏600度至攝氏900度之間，其壓力介於100托爾至400托爾之間，最後得到該主動層12之厚度係6nm，進而使該主動層12包含該些奈米條狀結構121，而該些奈米條狀結構121係設置於與該圖案化基板10之該些圖案對應之頂端，如第二A圖所示，該些奈米條狀結構121設置於對應該些圖案之頂端，亦於對應該些梯形之頂端；而該主動層12亦覆蓋對應該些圖案之兩側，亦對應該些梯形之兩側。最後，執行步驟S38，成長該匹覆層14於該主動層12上，該匹覆層14之厚度為100nm。In the manufacturing method of the light-emitting element 1a of the present embodiment, the step S30 is performed first, the patterned substrate 10 is taken, and then the step S32 is performed to grow the buffer layer 11 on the patterned substrate 10 to grow the temperature of the buffer layer 11. Between 500 degrees Celsius and 700 degrees Celsius, the thickness of the buffer layer 11 is between 20 nm and 50 nm. The thickness of the buffer layer 11 in the embodiment is 30 nm. Then, the step S34 is performed to grow the semiconductor layer 13 On the buffer layer 11, the thickness of the semiconductor layer 13 is 1 μm, and then step S36 is performed to grow the active layer 12 on the semiconductor layer 13 by an organometallic vapor phase epitaxial process, because the organometallic vapor phase epitaxy is controlled. The temperature of the process is between 600 degrees Celsius and 900 degrees Celsius, and the pressure is between 100 Torr and 400 Torr. Finally, the thickness of the active layer 12 is 6 nm, so that the active layer 12 contains the nanospheres. a strip-shaped structure 121, and the nano-strip structures 121 are disposed at the top end corresponding to the patterns of the patterned substrate 10, as shown in FIG. 2A, the nano-strip structures 121 are disposed on The top of the pattern should also correspond to some ladders. The top; while the active layer 12 should also cover the sides of these patterns, the two sides should also some trapezoid. Finally, in step S38, the cover layer 14 is grown on the active layer 12, and the thickness of the overlap layer 14 is 100 nm.
請參閱第三圖，係本發明之另一較佳實施例之掃瞄式電子顯微鏡圖。如圖所示，將第二A圖之實施例之發光元件利用掃瞄式電子顯微鏡所拍攝之照片，為該發光元件之俯視圖，由掃瞄式電子顯微鏡圖中明顯看出，該些奈米條狀結構121係位於該圖案化基板之該些圖案之頂端，請一併參閱該第二A圖，該圖案化基板之該些圖案為複數梯形所組成，每一梯形頂端係對應一奈米條狀結構121。然後於該些梯形之兩側邊廣泛分佈著許多V型缺陷(defect)及小的凹痕(pit)。另外一併參閱第四圖，係本發明之另一較佳實施例之穿透式電子顯微鏡圖。如圖所示，上述第二A圖之結構亦可透過穿透式電子顯微鏡拍攝，由該穿透式電子顯微鏡圖中可知，圖中標示I的部分為奈米條狀結構121，圖中標示Ⅲ的部分為具量子井結構之主動層，而圖中標示Ⅱ的部分不具有量子井結構，並可知該些奈米條狀結構121不具有典型存在於三族氮化物半導體之差排現象，此為提升該發光元件之發光強度之主要因素。Please refer to the third drawing, which is a scanning electron microscope image of another preferred embodiment of the present invention. As shown in the figure, the photograph taken by the scanning electron microscope of the light-emitting element of the embodiment of FIG. A is a top view of the light-emitting element, and it is apparent from the scanning electron microscope that the nanometers are The strip structure 121 is located at the top of the patterns of the patterned substrate. Please refer to the second A diagram. The patterns of the patterned substrate are composed of a plurality of trapezoids, and each trapezoidal top end corresponds to one nanometer. Strip structure 121. Then, a plurality of V-shaped defects and small pits are widely distributed on both sides of the trapezoids. Further, referring to the fourth figure, there is shown a transmission electron microscope image of another preferred embodiment of the present invention. As shown in the figure, the structure of the second A picture can also be taken through a transmission electron microscope. As can be seen from the transmission electron microscope image, the portion marked with I in the figure is a nano-bar structure 121, which is indicated in the figure. The portion of III is an active layer with a quantum well structure, and the portion labeled II in the figure does not have a quantum well structure, and it is known that the nano-strip structure 121 does not have a difference phenomenon typically existing in a group III nitride semiconductor. This is a major factor in improving the luminous intensity of the light-emitting element.
請參閱第五圖，係本發明之另一較佳實施例之發光強度之曲線示意圖。如圖所示，利用光致發光光譜測量系統檢測該第二A圖之發光元件之發光強度，使雷射光束集中於該些奈米條狀結構上及設於該圖案化基板側邊之主動層進行檢測，另外檢測一般的主動層做為參考，因此得到一發光強度曲線圖，其中包含一第一曲線21、一第二曲線22及一第三曲線23，該第一曲線21係表示該些奈米條狀結構之發光強度，該第二曲線22係表示設於該圖案化基板之側邊之主動層之發光強度，該第三曲線23係表示一般主動層之發光強度，由該曲線圖可知，當光透過該些奈米條狀結構時，可有效提升該發光元件之發光強度，與設於該圖案化基板之側邊之主動層之發光強度及一般主動層之發光強度比較，高出五倍之多，證明該些奈米條狀結構有效提升該發光元件之發光強度。Please refer to the fifth figure, which is a schematic diagram of the luminous intensity of another preferred embodiment of the present invention. As shown in the figure, the illuminating intensity of the illuminating element of the second A picture is detected by a photoluminescence spectroscopy system, and the laser beam is concentrated on the nano strip structure and the active side of the patterned substrate is disposed. The layer is detected, and the general active layer is additionally used as a reference, so that a luminous intensity graph is obtained, which includes a first curve 21, a second curve 22 and a third curve 23, wherein the first curve 21 indicates The luminous intensity of the nano strip structure, the second curve 22 represents the luminous intensity of the active layer disposed on the side of the patterned substrate, and the third curve 23 represents the luminous intensity of the general active layer. It can be seen that when the light passes through the nano strip structures, the luminous intensity of the light emitting element can be effectively improved, compared with the luminous intensity of the active layer disposed on the side of the patterned substrate and the luminous intensity of the general active layer. Five times higher, it is proved that the nano strip structures effectively increase the luminous intensity of the light-emitting element.
本發明係提供一種具有奈米條狀結構之發光元件及其製造方法，利用有機金屬氣相磊晶製程於一圖案化基板上成長出複數奈米條狀結構，因該些奈米條狀結構不具典型存在於三族氮化物半導體之差排現象，因此可有效提升該發光元件。而本發明所提供之發光元件更可應用於發光二極體之開發上，並可有效提升發光二極體之發光效率。The present invention provides a light-emitting element having a nano-strip structure and a method of fabricating the same, which utilizes an organometallic vapor phase epitaxial process to grow a plurality of nano-bar structures on a patterned substrate due to the nano-stripe structures There is no typical difference in the presence of a group III nitride semiconductor, so that the light-emitting element can be effectively improved. The light-emitting element provided by the invention can be further applied to the development of the light-emitting diode, and can effectively improve the luminous efficiency of the light-emitting diode.
綜上所述，本發明係實為一具有新穎性、進步性及可供產業利用者，應符合我國專利法所規定之專利申請要件無疑，爰依法提出發明專利申請，祈 鈞局早日賜准專利，至感為禱。In summary, the present invention is a novelty, progressive and available for industrial use, and should conform to the patent application requirements stipulated in the Patent Law of China, and the invention patent application is filed according to law. Patent, to the feeling of prayer.
惟以上所述者，僅為本發明之一較佳實施例而已，並非用來限定本發明實施之範圍，舉凡依本發明申請專利範圍所述之形狀、構造、特徵及精神所為之均等變化與修飾，均應包括於本發明之申請專利範圍內。However, the above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and the shapes, structures, features, and spirits described in the claims are equivalently changed. Modifications are intended to be included in the scope of the patent application of the present invention.
1．．．發光元件1. . . Light-emitting element
10．．．圖案化基板10. . . Patterned substrate
12．．．主動層12. . . Active layer
121．．．奈米條狀結構121. . . Nano-bar structure
1a．．．發光元件1a. . . Light-emitting element
11．．．緩衝層11. . . The buffer layer
13．．．半導體層13. . . Semiconductor layer
14．．．匹覆層14. . . Cover layer
21．．．第一曲線twenty one. . . First curve
22．．．第二曲線twenty two. . . Second curve
23．．．第三曲線twenty three. . . Third curve
第1A圖：本發明之一較佳實施例之立體結構示意圖；第1B圖：本發明之一較佳實施例之製造流程示意圖；第1C圖：本發明之一較佳實施例之正視結構示意圖；第1D圖：本發明之一較佳實施例之圖案化基板形成之流程示意圖；第2A圖：本發明之另一較佳實施例之結構示意圖；第2B圖：本發明之另一較佳實施例之製造流程示意圖；第3圖：本發明之另一較佳實施例之掃瞄式電子顯微鏡圖；及第4圖：本發明之另一較佳實施例之穿透式電子顯微鏡圖；及第5圖：本發明之另一較佳實施例之發光強度之曲線示意圖。1A is a schematic perspective view of a preferred embodiment of the present invention; FIG. 1B is a schematic view showing a manufacturing process of a preferred embodiment of the present invention; FIG. 1C is a schematic front view showing a preferred embodiment of the present invention; 1D is a schematic flow chart of forming a patterned substrate according to a preferred embodiment of the present invention; FIG. 2A is a schematic structural view of another preferred embodiment of the present invention; FIG. 2B is another preferred embodiment of the present invention. Schematic diagram of the manufacturing process of the embodiment; FIG. 3: a scanning electron microscope image of another preferred embodiment of the present invention; and FIG. 4: a transmission electron microscope image of another preferred embodiment of the present invention; And Figure 5 is a graph showing the luminous intensity of another preferred embodiment of the present invention.
1．．．發光元件1. . . Light-emitting element
10．．．圖案化基板10. . . Patterned substrate
12．．．主動層12. . . Active layer
121．．．奈米條狀結構121. . . Nano-bar structure
Claims (32)
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| TWI565094B (en) | 2012-11-15 | 2017-01-01 | 財團法人工業技術研究院 | Nitride semiconductor device |
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| TW480705B (en) * | 1999-10-22 | 2002-03-21 | Nippon Electric Co | Base substrate for crystal growth and manufacturing method of substrate by using the same |
| TW200419827A (en) * | 2003-03-21 | 2004-10-01 | Tien-Yang Wang | Semiconductor light-emitting device and method for manufacturing the same |
| TWI234293B (en) * | 2001-10-09 | 2005-06-11 | Sumitomo Electric Industries | Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate |
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| TW480705B (en) * | 1999-10-22 | 2002-03-21 | Nippon Electric Co | Base substrate for crystal growth and manufacturing method of substrate by using the same |
| TWI234293B (en) * | 2001-10-09 | 2005-06-11 | Sumitomo Electric Industries | Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate |
| TW200419827A (en) * | 2003-03-21 | 2004-10-01 | Tien-Yang Wang | Semiconductor light-emitting device and method for manufacturing the same |
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