TWI412055B - Charged particle beam imaging system and method - Google Patents
Charged particle beam imaging system and method Download PDFInfo
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- TWI412055B TWI412055B TW98145546A TW98145546A TWI412055B TW I412055 B TWI412055 B TW I412055B TW 98145546 A TW98145546 A TW 98145546A TW 98145546 A TW98145546 A TW 98145546A TW I412055 B TWI412055 B TW I412055B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/004—Charge control of objects or beams
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/004—Charge control of objects or beams
- H01J2237/0041—Neutralising arrangements
- H01J2237/0044—Neutralising arrangements of objects being observed or treated
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/004—Charge control of objects or beams
- H01J2237/0048—Charging arrangements
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Abstract
Description
本發明是有關一種帶電粒子束成像裝置與其方法，特別是增進帶電粒子束成像系統影像的方法與系統。The present invention relates to a charged particle beam imaging apparatus and method therefor, and more particularly to a method and system for enhancing the image of a charged particle beam imaging system.
帶電粒子束成像系統利用帶電粒子束(稱為主帶電粒子束)掃描並照射樣品表面，接著收集由樣品放射的二次帶電粒子以形成影像。在給定主帶電粒子束的條件下，二次帶電粒子的強度取決於樣品表面圖案、材質結構與電位區域分布之狀態，因此所成影像得顯示出表面圖案、材質對比與/或電位對比。The charged particle beam imaging system scans and illuminates the surface of the sample with a charged particle beam (referred to as the main charged particle beam), and then collects the secondary charged particles emitted by the sample to form an image. Given the main charged particle beam, the intensity of the secondary charged particles depends on the state of the sample surface pattern, material structure and potential region distribution, so the resulting image shows surface pattern, material contrast and/or potential contrast.
常見的帶電粒子束成像系統通常包含用以產生帶電粒子束之主帶電粒子束源，用以凝聚所生的帶電粒子束之聚焦透鏡用以將帶電粒子束聚焦為精細探針之物鏡以及偏轉單元係用以偏轉精細探針以掃描置於樣品台(stage)上之樣品。帶電粒子束探針與樣品交互作用以激發出二次帶電粒子，其傳達樣品表面區域之圖案、材質與電位的資訊。在適當的樣品表面電荷條件下，有利於傳達高對比以及高解析度之穩定且均勻之成像。然而，在某些情況下，在成像掃描過程中，帶電粒子束本身無法建立有利的電荷條件；或者帶電粒子束可能導致嚴重的表面電荷，其明顯扭曲、失焦與/或使取像區與鄰近的影像的對比喪失，而使影像品質嚴重的惡化。因此，在成像掃描前後，特定的電荷重整方法(charging regulation)(以下分別稱為前置掃描或後置掃描)已發展出來，這對於常見的帶電粒子束成像系統非常重要。Common charged particle beam imaging systems typically include a primary charged particle beam source for generating a charged particle beam, a focusing lens for condensing the generated charged particle beam to focus the charged particle beam into a fine probe objective lens and a deflection unit Used to deflect a fine probe to scan a sample placed on a stage. The charged particle beam probe interacts with the sample to excite secondary charged particles that convey information about the pattern, material, and potential of the surface area of the sample. Under the appropriate sample surface charge conditions, it is conducive to the transmission of stable and uniform imaging with high contrast and high resolution. However, in some cases, the charged particle beam itself cannot establish favorable charge conditions during the imaging scan; or the charged particle beam may cause severe surface charge, which is significantly distorted, out of focus, and/or causes the image capture area to The contrast of adjacent images is lost, and the image quality is seriously deteriorated. Therefore, specific charge reforming (hereinafter referred to as pre-scanning or post-scanning, respectively) has been developed before and after imaging scanning, which is very important for common charged particle beam imaging systems.
請參考圖1，其是根據先前技術的帶電粒子束成像系統100。主帶電粒子束由帶電粒子束源110產生，其可以是一電子束槍(用以舉例而非限制)。藉由聚焦透鏡模組120聚焦帶電粒子束，藉由物鏡模組130聚焦而形成帶電粒子束探針140，偏轉單元150偏轉帶電粒子束探針140以線性方式掃描設置於樣品台190上的樣品195。需特說明，藉由在垂直掃描線方向上補償移動電子束心，或者以適當的方式移動樣品台190，一維的線性掃描可轉換為二維的線柵(raster)。當帶電粒子束探針140撞擊樣品195後，二次帶電粒子160，例如二次電子(用以舉例而非限制)自樣品195放射出來，並附隨返回散射帶電粒子(backscattered charged particles)，例如反散射電子(用以舉例而非限制)，而被帶電粒子偵測器170收集。因二次帶電粒子的數量可以被掃描區域的樣品195表面圖案或電位調制，而能得到二維圖案對比與電位對比。樣品195可以是晶圓、光罩或半導體裝置等等。為簡化說明，須特別說明，以下所用之詞彙帶電粒子“束”或“束探針”(特指電子束被聚焦在樣品表面)，實質上為同一帶電粒子束。Please refer to FIG. 1, which is a charged particle beam imaging system 100 in accordance with the prior art. The primary charged particle beam is generated by a charged particle beam source 110, which may be an electron beam gun (for purposes of example and not limitation). The charged particle beam is focused by the focusing lens module 120, and the charged particle beam probe 140 is formed by focusing the objective lens module 130. The deflection unit 150 deflects the charged particle beam probe 140 to scan the sample disposed on the sample stage 190 in a linear manner. 195. It is to be noted that by compensating the moving electron beam center in the direction of the vertical scanning line or moving the sample stage 190 in an appropriate manner, the one-dimensional linear scan can be converted into a two-dimensional raster. When the charged particle beam probe 140 strikes the sample 195, secondary charged particles 160, such as secondary electrons (by way of example and not limitation), are emitted from the sample 195 and are accompanied by backscattered charged particles, such as Backscattered electrons (by way of example and not limitation) are collected by charged particle detector 170. Since the number of secondary charged particles can be modulated by the surface pattern or potential of the sample 195 of the scanned region, a two-dimensional pattern contrast and potential contrast can be obtained. Sample 195 can be a wafer, a reticle or a semiconductor device, or the like. In order to simplify the description, it is to be noted that the vocabulary charged particle "beam" or "beam probe" (specifically, the electron beam is focused on the surface of the sample) is substantially the same charged particle beam.
一般情況下，在掃描區域上被主帶電粒子束誘發出的電荷，若無法快速的接地釋放掉，這些誘發出的電荷將會累積。儘管樣品電荷的某些準位適於傳遞電位對比影像，因主帶電粒子束的扭曲與/或失焦，多餘且非均勻的電荷將導致成像的不良效應。因此，在原始存在電荷或前次掃描過程中所產生的感應電荷所形成表面電荷上，發展一種重整這種表面電荷的方法是非常重要的。In general, the charge induced by the main charged particle beam on the scanning area will accumulate if it cannot be quickly grounded. Although some of the charge of the sample is suitable for transmitting potential contrast images, excess and non-uniform charges will cause undesirable effects of imaging due to distortion and/or out of focus of the main charged particle beam. Therefore, it is very important to develop a method of reforming the surface charge in the presence of the original charge or the surface charge formed by the induced charge generated during the previous scanning.
另一種相反的情況是，主帶電粒子束所感應的電荷太弱，導致無法產生可接受的電位影像對比，或者成像掃描前的原始存在電荷不夠均勻而無法提供均勻的影像。因此需要有額外的步驟以重整表面電荷狀態，例如成像掃描前執行此步驟，且可以整合進成像掃描過程。In the opposite case, the charge induced by the main charged particle beam is too weak, resulting in an inability to produce an acceptable potential image contrast, or the original stored charge prior to imaging scanning is not uniform enough to provide a uniform image. Additional steps are therefore required to reform the surface charge state, such as performing this step prior to imaging scanning, and can be integrated into the imaging scan process.
目前在某些情況中，常用的重整表面電荷狀態之方法是藉由一泛射槍(flood gun)180，特別在樣品表面以額外的帶電粒子束、光束或電磁輻射掃描樣品表面，以在其上建立特定的電荷狀態。這種操作基本上是在一個影像框或是整個晶圓上實施，也就是說其一次所處理的是樣品表面的大範圍處理。然而此種方法，在重整後，當進行後續的影像掃描時，已建立的特定電荷狀態可能被改變，例如由於已重整樣品表面與環境交互作用而改變。特別是，在進行掃描時，樣品表面的重整區的電荷狀態可能已經被改變，結果所得到的影像之品質無法滿足需求。In some cases, the usual method of reforming the surface charge state is to scan the surface of the sample with an additional charged particle beam, beam or electromagnetic radiation by a flood gun 180, particularly on the surface of the sample. A specific state of charge is established thereon. This operation is basically carried out in one image frame or on the entire wafer, that is to say it deals with a wide range of processing of the sample surface at a time. However, in this method, after the reforming, the specific charge state that has been established may be changed when a subsequent image scan is performed, for example, due to the interaction of the surface of the reformed sample with the environment. In particular, the charge state of the reforming zone on the surface of the sample may have been changed during the scanning, and as a result, the quality of the resulting image could not meet the demand.
因此，以更即時的方式控制樣品表面電荷狀態，而能獲得更為適當與更均勻影像品質的方法是非常亟需的。Therefore, it is highly desirable to control the surface charge state of the sample in a more immediate manner, and to obtain a more appropriate and more uniform image quality.
本發明之一特徵是提供一種重整表面電荷之方法，其於帶電粒子束成像時，提供一穩定、均勻與輪廓鮮明的影像。所揭露之方法可重複的、連續的在鄰近區域掃描成像，且不會導致鄰近表面電荷狀態的不良效果。It is a feature of the present invention to provide a method of reforming surface charges that provides a stable, uniform, and well-defined image upon imaging of charged particle beams. The disclosed method is capable of repeating, continuous scanning imaging in adjacent regions without causing undesirable effects on adjacent surface charge states.
本發明之另一特徵是提供帶電粒子束成像裝置，其能在帶電粒子束成像掃描中、掃描前以及/或掃描後重整表面電荷。Another feature of the present invention is to provide a charged particle beam imaging apparatus that is capable of reforming surface charges in a charged particle beam imaging scan, before and/or after scanning.
於本發明一實施例，揭露增進帶電粒子微影像品質之方法，其中影像是帶電粒子束成像系統所成之影像。本方法包含在至少一第一掃描線，利用第一掃描帶電粒子束，掃描樣品表面；以及在至少一第二掃描線，利用第二掃描帶電粒子束，掃描樣品表面，其中該第二掃描帶電粒子束是在該第一掃描線結束時與下次該第一掃描線開始時之時間區間內，掃描該樣品表面。In an embodiment of the invention, a method for improving the quality of a charged particle microimage is disclosed, wherein the image is an image formed by a charged particle beam imaging system. The method includes at least a first scan line, scanning a surface of the sample with a first scanned charged particle beam; and scanning the surface of the sample with a second scanned charged particle beam at the at least one second scan line, wherein the second scan is charged The particle beam scans the surface of the sample during the time interval between the end of the first scan line and the beginning of the first scan line.
於本發明另一實施例，揭露能夠於樣品成像期間並增進影像品質之帶電粒子成像系統。其包含掃描帶電粒子束源、偏轉模組、樣品台以及控制器。樣品是設置於樣品台上用以成像，掃描帶電粒子束源用以產生至少一第一掃描帶電粒子束與至少一第二掃描帶電粒子束，偏轉模組用以偏轉掃描帶電粒子束以跨過樣品表面進行掃描，以及控制器用以協調整合帶電粒子束源、偏轉模組與樣品台，使得樣品表面能夠在至少一第一掃描線上被該第一掃描帶電粒子束掃描，接著能夠在至少一第二掃描線上被該第二掃描帶電粒子束掃描，其中該第二掃描帶電粒子束係於前次第一掃描線之結束時與下次第一掃描線之開始時的時間區間內，掃描該樣品表面。In another embodiment of the invention, a charged particle imaging system capable of enhancing image quality during imaging of a sample is disclosed. It includes a scanned charged particle beam source, a deflection module, a sample stage, and a controller. The sample is disposed on the sample stage for imaging, and the scanned charged particle beam source is configured to generate at least one first scanned charged particle beam and at least one second scanned charged particle beam, and the deflection module is configured to deflect the scanned charged particle beam to cross Scanning the surface of the sample, and the controller is configured to coordinate the integration of the charged particle beam source, the deflection module and the sample stage, so that the surface of the sample can be scanned by the first scanned charged particle beam on at least one first scan line, and then at least one The second scan line is scanned by the second scanned charged particle beam, wherein the second scanned charged particle beam is scanned in the time interval between the end of the previous first scan line and the beginning of the next first scan line, and the sample is scanned. surface.
有多種重整帶電狀態的方法，例如暴露於一定濕度下的空氣中、濕潔淨或暴露於離子空氣潔淨器…等。為能相容於帶電粒子束成像裝置(通常是在高真空封閉的環境下操作)，能量束通常於每群成像掃描線之前與/或之後，由遠端存取樣品表面並同時獲取較佳的表面電荷狀態。在某些情況，於成像掃描線形成之同時施加調整能量束。能量束可以是帶電粒子束(電子或離子)、光束或電磁輻射，或其組合。需注意的是，成像與重整掃描能束可掃描樣品上相同或不同的位置，但無論是那種狀況，重整掃描能束的有效涵蓋區域都應包含前一成像掃描線及/或下一掃描線，使得重整樣品之表面電荷能獲取接續成像掃描之較佳影像品質。There are a variety of methods for reforming the charged state, such as exposure to air at a certain humidity, wet cleaning, or exposure to an ionic air cleaner. In order to be compatible with charged particle beam imaging devices (usually operating in a high vacuum enclosed environment), the energy beam is typically accessed by the distal end and/or at the same time before and/or after each group of imaging scan lines. Surface charge state. In some cases, the adjustment energy beam is applied while the imaging scan line is being formed. The energy beam can be a charged particle beam (electron or ion), a beam of light or electromagnetic radiation, or a combination thereof. It should be noted that the imaging and reforming scanning energy beam can scan the same or different positions on the sample, but in either case, the effective coverage area of the reforming scanning energy beam should include the previous imaging scanning line and/or A scan line enables the surface charge of the reformed sample to obtain a better image quality for successive imaging scans.
本發明之一實施例提供一種帶電粒子束之樣品成像的掃描方法。掃描方法包含使用第一能量束探針與第二能量束探針交互掃描樣品表面。例如，利用第一能量束探針與第二能量束探針之一執行掃描操作，以形成樣品表面影像；然後使用另一第一能量束探針或第二能量束探針執行掃描操作，以消除前一次成像掃描所產生的表面電荷，以下將此種操作稱為後期掃描。另一範例，利用第一能量束探針與第二能量束探針之一執行掃描操作，以將樣品表面帶電狀態設定至所需的狀態；然後使用另一第一能量束探針或第二能量束探針執行掃描操作，以形成樣品表面影像，以下將此種操作稱為預先掃描。無論是後其掃描或預先掃描，重整掃描與成像掃描都是以交錯重複之方式執行。One embodiment of the present invention provides a scanning method for imaging a sample of a charged particle beam. The scanning method includes interactively scanning the surface of the sample with the second energy beam probe using the first energy beam probe. For example, performing a scanning operation using one of the first energy beam probe and the second energy beam probe to form a sample surface image; then performing a scanning operation using another first energy beam probe or a second energy beam probe to The surface charge generated by the previous imaging scan is eliminated, and this operation is hereinafter referred to as post-scan. In another example, a scanning operation is performed using one of the first energy beam probe and the second energy beam probe to set the surface state of the sample surface to a desired state; then another first energy beam probe or second is used. The energy beam probe performs a scanning operation to form a sample surface image, which is referred to below as a pre-scan. Whether it is post scan or pre-scan, the rescan scan and the imaging scan are performed in an interleaved manner.
成像掃描可採用第一能量束探針或第二能量束探針。對於帶電粒子束成像系統，用以成像之能量束探針需為帶電粒子束探針，例如電子束探針或離子束探針。一旦選擇成像能量束探針，另外的能量束探針則用以重整電荷狀態，例如消除或增強表面帶電狀態。然而，重整能量束探針可以是帶電粒子束(電子或離子)束、光束或電磁輻射，或其組合。需注意的是，若二個能量束探針是同型態，如電子束探針或離子束探針，其可來自於相同的能量束源或是不同的能量束源。進一步，若二個能量束探針來自相同的能量束源，彼此間間至少有一不同的能量束狀態，如樣品上之衝擊能(landing energy)、束流密度(beam current density)、束焦(beam focus)、束斑大小(beam spot size)與束入射角(incident beam angle)…等，使得其可實現各自之成像或重整的功能。The imaging scan can employ a first energy beam probe or a second energy beam probe. For charged particle beam imaging systems, the energy beam probe used for imaging needs to be a charged particle beam probe, such as an electron beam probe or an ion beam probe. Once the imaging energy beam probe is selected, additional energy beam probes are used to reform the state of charge, such as eliminating or enhancing the surface charged state. However, the reformed energy beam probe can be a charged particle beam (electron or ion) beam, a beam of light, or electromagnetic radiation, or a combination thereof. It should be noted that if the two energy beam probes are of the same type, such as an electron beam probe or an ion beam probe, they may be from the same energy beam source or different energy beam sources. Further, if the two energy beam probes are from the same energy beam source, there is at least one different energy beam state between them, such as the landing energy, the beam current density, and the beam focus on the sample ( Beam focus), beam spot size, and incident beam angle, etc., enable them to perform their respective imaging or reforming functions.
第一與第二能量束探針，在樣品表面，可分別感應出第一表面帶電狀態與第二表面帶電狀態，本文所稱表面帶電狀態是指由掃描能量束探針所感應之電性與累積之電荷。需注意所謂“第一”與“第二”表面帶電狀態(以及第一與第二掃描能量束探針)是為了區別在時間上出現之順序，也就是說，第一掃描能量束探針，可為成像或是重整能量束探針，其於樣品表面感應出第一表面帶電狀態，然後接著第二掃描能量束探針，可為重整或是成像能量束探針，其於樣品表面感應出第二表面帶電狀態。The first and second energy beam probes respectively induce a first surface charging state and a second surface charging state on the surface of the sample, and the surface charging state refers to the electrical property induced by the scanning energy beam probe. Cumulative charge. It should be noted that the so-called "first" and "second" surface charged states (and the first and second scanning energy beam probes) are intended to distinguish the order in which they occur in time, that is, the first scanning energy beam probe, The imaging or reforming energy beam probe can induce a first surface charged state on the surface of the sample, and then a second scanning energy beam probe, which can be a reforming or imaging energy beam probe on the surface of the sample The second surface is charged.
樣品表面上的第一帶電狀態與第二帶電狀態間的交互作用基本上是由個別帶電狀態所具有電荷極性來決定。例如，以電荷的電性與電量而言，若第一與第二表面帶電狀態具有相同的電荷極性，則第二表面帶電狀態可增強、緩和第一表面帶電狀態，或者無作用。相反的，以電荷的電性與電量而言，若第一與第二表面帶電狀態具有不同的電荷極性，如正電荷極性對負電荷極性、正/負電荷極性對中性電荷極性等，則第二表面帶電狀態可緩和、抵銷第一表面帶電狀態，或電性反轉第一表面帶電狀態之電荷極性。The interaction between the first charged state and the second charged state on the surface of the sample is substantially determined by the polarity of the charge of the individual charged state. For example, in terms of charge electrical properties and electrical quantity, if the first and second surface charged states have the same charge polarity, the second surface charged state may enhance, mitigate, or have no effect on the first surface charged state. Conversely, if the first and second surface charged states have different charge polarities, such as positive charge polarity versus negative charge polarity, positive/negative charge polarity versus neutral charge polarity, etc., The second surface charged state may moderate, offset the first surface charged state, or electrically reverse the charge polarity of the first surface charged state.
例如，在後期掃描模式操作，第二帶電狀態用以重整第一帶電狀態。於第二帶電狀態施加於第一帶電狀態時，在樣品表面上將形成淨帶電狀態。下一成像能量束探針(本範例為第一能量束探針)所成之影像品質可藉由樣品上淨帶電狀態而獲得改善。於一實施例中，第二帶電狀態實等於淨帶電狀態。表1所列數個範例，用以能夠較佳地解釋，於後期掃描模式操作中，利用第二帶電狀態重整第一帶電狀態。For example, in a post-scan mode operation, a second powered state is used to reform the first charged state. When the second charged state is applied to the first charged state, a net charged state will be formed on the surface of the sample. The image quality of the next imaging energy beam probe (the first energy beam probe in this example) can be improved by the net state of charge on the sample. In an embodiment, the second charged state is substantially equal to the net state of charge. The several examples listed in Table 1 are used to better explain that in the post-scan mode operation, the first charged state is reformed using the second charged state.
例如，於對樣品成像時，用以成像之第一掃描能量束探針感應出5伏之第一帶電狀態累積於樣品表面；接著，藉由用以重整之第二掃描能量束探針掃描樣品表面以重整第一掃描能量束探針所感應的第一帶電狀態，其導入第二帶電狀態與第一帶電狀態產生交互作用，而在樣品表面產生淨帶電狀態。假設第二帶電狀態與第一帶電狀態具有相同的電荷極性，則若淨帶電狀態高於5伏，如10伏，因此第二帶電狀態增強第一帶電狀態；若淨帶電狀態仍為5伏，第二帶電狀態對第一帶電狀態不發生影響，若淨帶電狀態低於5伏，如2伏，則第二帶電狀態緩和第一帶電狀態。另外，假設第二帶電狀態與第一帶電狀態具有不同的電荷極性，則若淨帶電狀態仍有相同的極性，但電量較少，如2伏，則第二帶電狀態緩和第一帶電狀態；若淨帶電狀態被測為0電壓，則第二帶電狀態中和第一帶電狀態；若淨帶電狀態之電荷極性與第一帶電狀態相反，則第二帶電狀態反轉第一帶電狀態。For example, when imaging the sample, the first scanning energy beam probe for imaging induces a first charged state of 5 volts accumulated on the surface of the sample; and then, by scanning with a second scanning energy beam probe for reforming The surface of the sample is reformed to a first charged state induced by the first scanning energy beam probe, and the introduction of the second charged state interacts with the first charged state to produce a net charged state on the surface of the sample. Assuming that the second charged state has the same charge polarity as the first charged state, if the net charged state is higher than 5 volts, such as 10 volts, the second charged state enhances the first charged state; if the net charged state is still 5 volts, The second charged state does not affect the first charged state. If the net charged state is less than 5 volts, such as 2 volts, the second charged state relaxes the first charged state. In addition, assuming that the second electrification state and the first electrification state have different charge polarities, if the net electrification state still has the same polarity, but the electric quantity is less, such as 2 volts, the second electrification state relaxes the first electrification state; The net electrification state is measured as a zero voltage, and the second electrification state is neutralized by the first electrification state; if the charge polarity of the net electrification state is opposite to the first electrified state, the second electrified state reverses the first electrified state.
簡結，第二帶電狀態可以與第一帶電狀態具有相同的電荷極性，或者可以具有不同的電荷極性。當二電荷狀態具有相同的電荷極性時，第二帶電狀態可增強、緩和第一帶電狀態，或者不對第一帶電狀態發生作用。當二電荷狀態具有不同的電荷極性時，第二帶電狀態可緩和、抵銷(中和)第一帶電狀態，或者反轉第一帶電狀態之電荷極性。In short, the second charged state may have the same charge polarity as the first charged state, or may have a different charge polarity. When the two charge states have the same charge polarity, the second charged state may enhance, moderate, or not affect the first charged state. When the two charge states have different charge polarities, the second charged state may moderate, cancel (neutralize) the first charged state, or reverse the charge polarity of the first charged state.
需注意，此處雖然以後期掃描模式操作，並以特定之正第一帶電狀態情境作為範例，其仍可適用於其他相似情境，如正電荷極性的第一帶電狀態之預先掃描操作模式、負電荷極性的第一帶電狀態之後期掃描操作模式、負電荷極性的第一帶電狀態之預先掃描操作模式、中性的第一帶電狀態之後期掃描操作模式、中性的第一帶電狀態之預先掃描操作模式…等。It should be noted that although the operation is performed in the post-scan mode and the specific positive first-charge state scenario is taken as an example, it can be applied to other similar situations, such as the pre-scan operation mode of the first charged state of positive charge polarity, negative. a pre-scan operation mode of a first charged state of a charge polarity, a pre-scan operation mode of a first charged state of a negative charge polarity, a neutral first charge state, a post-scan operation mode, and a neutral first charge state pre-scan Operating mode...etc.
於一實施例中，成像操作是利用第一能量束探針來實現，其為帶電粒子束探針，如電子束與離子束。另外，第二能量束探針(其可為帶電粒子束)掃描可於回掃期間(retrace period)執行，以重整樣品表面帶電狀態。本實施例中，能量束回掃期間被定義為介於二成像帶電粒子束探針間之時間區間。介於回掃期間，成像能量束探針指向前一成像掃描線之末端與下一成像掃描線之開端，此期間內並無成像掃描。In one embodiment, the imaging operation is accomplished using a first energy beam probe that is a charged particle beam probe, such as an electron beam and an ion beam. Additionally, a second energy beam probe (which may be a charged particle beam) scan may be performed during a retrace period to reform the sample surface charged state. In this embodiment, the energy beam retrace period is defined as the time interval between the two imaging charged particle beam probes. During the retrace period, the imaging energy beam probe points to the end of the previous imaging scan line and the beginning of the next imaging scan line, during which no imaging scan is performed.
於上述實施例之一範例，第一能量束與第二能量束皆為帶電粒子束且來自於相同之束源。此種情況，二能量束之條件如衝擊能、束流密度、束焦、束斑大小與離子束之入射角度…等可以是不同的。其中，於一範例中，能量束撞擊樣品時，束斑可由能量束探針射點之直徑大小而測得。In an example of the above embodiment, the first energy beam and the second energy beam are both charged particle beams and are from the same beam source. In this case, the conditions of the two energy beams, such as impact energy, beam density, beam focus, beam spot size, and incident angle of the ion beam, etc., may be different. Wherein, in an example, when the energy beam hits the sample, the beam spot can be measured by the diameter of the energy beam probe spot.
於另一範例中，第一能量束與第二能量束為相同種類之帶電粒子束，但來自於不同之束源。此範例中，第一帶電粒子束與第二電粒子束之條件如衝擊能、束流密度、束焦、束斑大小與離子束之入射角度…等可以是不同的。其中，於一範例中，能量束撞擊樣品時，束斑可由能量束探針射點之直徑大小而測得。In another example, the first energy beam and the second energy beam are the same kind of charged particle beam, but from different beam sources. In this example, the conditions of the first charged particle beam and the second charged particle beam, such as impact energy, beam density, beam focus, beam spot size, and incident angle of the ion beam, etc., may be different. Wherein, in an example, when the energy beam hits the sample, the beam spot can be measured by the diameter of the energy beam probe spot.
請參考圖2A與圖2B，其用以說明本發明實施例之成像描掃、電荷重整描掃以及掃描線位移之觸發信號的時序。所說明之驅動信號包含線掃描信號210、線對線補償位移信號220A/220B以及重整掃描起動信號230。線掃描信號210以一掃描能量束探針(為簡化說明，以下稱第一掃描能量束)重複地以線條方式跨過樣品的表面(in lines across sample surface)進行掃描，每次掃描的線條(swath)，是在y方向固定時沿x方向延伸，其中以下將x方向義為掃描線方向，y方向定義為樣品台移動方向。線對線補償位移信號220A/220B用以移動樣品台及/或束心(例如使用束偏轉模裝置)於基本上垂直於掃描線方向，執行線對線之補償位移。重整掃描啟動信號230用以觸發掃描操作重整掃描能量束探針(為簡化說明，以下稱第二掃描能量束)。實務上，重整掃描能量束與成像掃描能量束可不同，或者相同但具有不同的能量束條件。前者，重整掃描啟動信號230，也可用以模糊(blanking)成像能量束探針，使得其在電荷重整的期間內，不會投射至樣品表面。另一種方式，二能量電子束於電荷重整期間可掃描樣品表面，但(第二)重整能量束之重整效果，必需比(第一)成像能量束之成像效果強，使得成像效果可以被忽略。後者，重整掃描啟動信號230也可用以改變成像能量束之條件，使得其變成重整能量束探針，而其能夠實現電荷重整之效果。指向右邊的粗體箭號表示時間軸，必須注意的是二張圖中的掃描操作是反覆執行，如圖右側的點號(…)所示，直到形成樣品影像框。Please refer to FIG. 2A and FIG. 2B for explaining the timing of the imaging scan, the charge reforming scan, and the scan line displacement trigger signal in the embodiment of the present invention. The illustrated drive signals include a line scan signal 210, a line-to-line compensated displacement signal 220A/220B, and a reformatted scan enable signal 230. The line scan signal 210 is repeatedly scanned in a line across the sample surface with a scanning energy beam probe (for simplicity of explanation, hereinafter referred to as the first scanning energy beam), each scanned line ( Swath) extends in the x direction when fixed in the y direction, wherein the x direction is defined as the scan line direction, and the y direction is defined as the sample stage moving direction. The line-to-line compensation displacement signal 220A/220B is used to move the sample stage and/or the beam center (e.g., using a beam deflection mode device) to perform a line-to-line compensation displacement substantially perpendicular to the scan line direction. The reforming scan enable signal 230 is used to trigger a scan operation to reform the scanning energy beam probe (hereinafter referred to as a second scanning energy beam for simplicity of explanation). In practice, the reformed scanning energy beam can be different from the imaging scanning energy beam, or the same but with different energy beam conditions. The former, reforming the scan enable signal 230, can also be used to blanking the imaging energy beam probe such that it does not project onto the sample surface during charge reforming. Alternatively, the two-energy electron beam can scan the surface of the sample during charge reforming, but the reforming effect of the (second) reforming energy beam must be stronger than that of the (first) imaging energy beam, so that the imaging effect can be be ignored. In the latter case, the reforming scan enable signal 230 can also be used to change the condition of the imaging energy beam such that it becomes a reforming energy beam probe, which enables the effect of charge reforming. The bold arrow pointing to the right indicates the timeline. It must be noted that the scan operation in the two images is repeated, as indicated by the dot (...) on the right side of the figure, until the sample image frame is formed.
如圖所示完整的鋸齒狀線掃描信號210包含前掃斜率(forward slope)與回掃斜率(backward slope)(正斜率與負斜率)，掃描信號210的掃描期間包含期間T1、T2、T3等，過渡期間ΔT1、ΔT2、ΔT3等。本實施例中，在鋸齒狀線掃描信號210的前掃斜率的期間內，執行成像掃描，而回掃斜率之期間內，能量束回掃(能量束回抽)，然在同領域之技術人士可理解，亦可以相反的操作來實現。另一方面，觸發的重整掃描啟動信號230標示出重整表面電荷的起始時間與期間，在此期間內是利用重整能量束探針照射或掃描樣品表面。As shown, the complete zigzag line scan signal 210 includes a forward slope and a backward slope (positive slope and negative slope), and the scan period of the scan signal 210 includes periods T1, T2, T3, etc. , during the transition period ΔT1, ΔT2, ΔT3, and the like. In this embodiment, during the period of the pre-scan slope of the zigzag line scan signal 210, the imaging scan is performed, and during the period of the retrace slope, the energy beam is retraced (the energy beam is pumped back), but in the same field, the technical person It can be understood that the reverse operation can also be implemented. On the other hand, the triggered reforming scan enable signal 230 indicates the start time and period of the reformed surface charge during which the sample surface is illuminated or scanned using the reforming energy beam probe.
為了獲得樣品的二維影像，沿y軸方向，樣品上每一成像掃描線應彼此相鄰，而這種線對線的位移可藉由補償位移信號220A/220B，沿y軸方向，以階梯式逐步驅動樣品台的方式來達成；或者透過驅動束偏轉模組沿y軸方向，以階梯式逐步移動成像束，直到所有需要成像掃描的線，完成掃描。重整掃描啟動信號230可於過渡期間觸發，如ΔT1與ΔT3，在這些時間點上，補償位移信號220A仍未被觸發(如圖2A)，或者在這時間點上，補償位移信號220B已被觸發(如圖2B)而對下一掃描線進行掃描。前者形成後期掃描模式的表面電荷重整，而後者形成先期掃描模式的表面電荷重整。In order to obtain a two-dimensional image of the sample, along the y-axis direction, each imaging scan line on the sample should be adjacent to each other, and the displacement of the line-to-line can be compensated by the displacement signal 220A/220B, along the y-axis direction, with a step The method of stepwise driving the sample stage is achieved; or the imaging beam is stepwisely moved in the y-axis direction by the driving beam deflection module until all the lines requiring imaging scanning are completed. The reforming scan enable signal 230 can be triggered during the transition, such as ΔT1 and ΔT3, at which point the compensated displacement signal 220A is still not triggered (as in Figure 2A), or at this point in time, the compensated displacement signal 220B has been The next scan line is scanned by triggering (as in Figure 2B). The former forms a surface charge reforming of the post-scan mode, while the latter forms a surface charge reforming of the pre-scan mode.
如圖2A所示為本發明一實施例之後期掃描模式，在期間T1(掃描期間)結束時，已經完成成像掃描之後，在期間T2內，樣品台保持靜止或偏轉模組仍停留在已執行的成像掃描之相同的掃描線的位置上來進行掃描，而在在掃描期間T2內執行已於過渡期間ΔT1觸發的重整掃描。結果重整掃描實際是在成像掃描的位置上進行，僅是時間在成像掃描之後進行。接著，在過渡期間ΔT2，觸發下一個成像掃描之前(接著在一整個另一束掃描期間的期間T3內進行掃描)，樣品台移動或束偏轉模組將掃描位置，沿y軸方向，移動一個單位而指向下一掃描線並成像。2A shows a post-scan mode according to an embodiment of the present invention. After the imaging scan has been completed at the end of the period T1 (scanning period), during the period T2, the sample stage remains stationary or the deflection module remains in execution. The scanning of the same scanning line of the imaging scan is performed, and the re-scanning that has been triggered during the transition period ΔT1 is performed during the scanning period T2. As a result, the reforming scan is actually performed at the position of the imaging scan, and only the time is performed after the imaging scan. Then, during the transition period ΔT2, before the next imaging scan is triggered (and then during the entire period T3 of the other scan period), the sample stage shift or beam deflection module moves the scan position along the y-axis direction, The unit points to the next scan line and is imaged.
參考圖2B所示為本發明一實施例之先期掃描模式。如圖所示，在期間T1之結束時，已完成成像掃描之後，在過渡期間ΔT1，沿y軸方向，樣品台移動一個單位或者偏轉模組令掃描位置移動一單位指向下一掃描線並成像。在上述樣品台或偏轉模組之作動後，於過渡期間ΔT1觸發重整掃描，並於整個掃描期間T2內進行重整掃描。因此，在期間T2內，重整掃描是在下一成像掃描線上進行的。接著，在掃描期間T2結束時或過渡期間ΔT2內關閉重整掃描，且觸發下一個成像掃描，接著在整個掃描期間T3內，在下一條線上進行。結果重整掃描實際上是在下一個成像掃描的相同位置上進行，但是是在成像掃描之前進行。Referring to FIG. 2B, a prior scan mode according to an embodiment of the present invention is shown. As shown, at the end of the period T1, after the imaging scan has been completed, during the transition period ΔT1, along the y-axis direction, the sample stage moves by one unit or the deflection module moves the scanning position by one unit to the next scan line and images . After the operation of the sample stage or the deflection module, a reforming scan is triggered during the transition period ΔT1, and a reforming scan is performed during the entire scanning period T2. Therefore, during the period T2, the reforming scan is performed on the next imaging scan line. Next, the reforming scan is turned off at the end of the scanning period T2 or during the transition period ΔT2, and the next imaging scan is triggered, and then on the next line during the entire scanning period T3. As a result, the rescan scan is actually performed at the same position of the next imaging scan, but before the imaging scan.
在圖2A與圖2B中在y軸方向上，重整掃描與成像掃描是可以在不同位置上進行。於一實施例中，控制樣品台沿y軸方向回移，使得重整掃描與成像掃描，在y軸的方向上，可以在相同的位置上進行，y軸方向在此處即為樣品台移動的方向。In the y-axis direction in FIGS. 2A and 2B, the reforming scan and the imaging scan can be performed at different positions. In an embodiment, the sample stage is controlled to move back along the y-axis direction, so that the reforming scan and the imaging scan can be performed at the same position in the direction of the y-axis, where the y-axis direction is the sample stage movement. The direction.
在圖2A與圖2B中，雖然帶電粒子束探針的中心，沿y軸方向以階梯式的方式逐步移動，如圖中線補償位移信號220A/220B，其亦可藉由電性掃描或樣品台，以連續的方式移動。圖2C中所示為根據本發明另一實施例之成像掃描之觸發信號的時序圖，用以說明電荷重整掃描與掃描線補償位移。如圖所示的觸發信號包含線掃描信號210、重整掃描啟動信號230以及連續線對線補償位移信號220C。圖2C中，所定義的線掃描信號210與重整掃描啟動信號230與圖2A與圖2B相同，此處不再贅述。In FIGS. 2A and 2B, although the center of the charged particle beam probe is gradually moved in a stepwise manner along the y-axis direction, as shown by the line compensation displacement signal 220A/220B, it can also be electrically scanned or sampled. The station moves in a continuous manner. A timing diagram of a trigger signal for an imaging scan in accordance with another embodiment of the present invention is illustrated in FIG. 2C to illustrate charge reforming scan and scan line compensation displacement. The trigger signal as shown includes a line scan signal 210, a reformation scan enable signal 230, and a continuous line-to-line compensated displacement signal 220C. In FIG. 2C, the defined line scan signal 210 and the reformation scan enable signal 230 are the same as those of FIG. 2A and FIG. 2B, and are not described herein again.
此處再一次使用的線對線補償位移信號220C是用以移動樣品台及/或束中心(例如利用離子束偏轉裝置)，大致上沿著與掃描線垂直的方向執行線對線補償位移。如圖所示，線對線補償位移信號220C與線補償位移信號220A/220B的不同在於線對線補償位移信號220C是連續的，也就是說，圖2C所說明的線對線的位移，可以藉由線對線補償位移信號220C驅動樣品台，沿y軸方向以連續的方式移動，或者由束偏轉模組裝置，沿y軸方向以連續的方式補償移動掃描線來達成，直到所有需要成像掃描的線完成掃描。指向右向的粗箭號表示時間軸，須特別說明的是掃描的動作是不斷重複進行直到形成樣品的影像框。The line-to-line compensated displacement signal 220C, which is used again here, is used to move the sample stage and/or the beam center (e.g., using an ion beam deflection device) to perform line-to-line compensation displacement substantially in a direction perpendicular to the scan line. As shown, the line-to-line compensation displacement signal 220C differs from the line compensation displacement signal 220A/220B in that the line-to-line compensation displacement signal 220C is continuous, that is, the line-to-line displacement illustrated in FIG. 2C can be The sample stage is driven by the line-to-line compensation displacement signal 220C, moving in a continuous manner along the y-axis direction, or by the beam deflection module device, compensating the moving scanning line in a continuous manner along the y-axis direction until all imaging is required The scanned line completes the scan. The thick arrow pointing to the right indicates the time axis, and it should be noted that the scanning action is repeated until the image frame forming the sample is formed.
本實施例中，在一個鋸齒狀線掃描信號210的期間內，選擇前掃斜率信號為成像掃描，而後掃斜率用以表示掃描束回掃(抽回)的動作。可知在同領域之技術人士，實務上亦可採用相反的作動安排。因此，圖2C中，在ΔT1、ΔT3…等過渡期間內，觸發重整掃描啟動信號230接著在接續的T2、T4…等期間內保持啟動，則在整個回掃期間內都在執行重整掃描，意即在正常的掃描期間T1、T3…內，都在執行成像掃描。在這種設定下，進行先期掃描或後掃描模式的成像過程，其掃描方法設計如下：利用第一掃描束(成像束)，在至少一第一掃描線上掃描樣品表面，以及利用第二掃描束(重整束)，在至少一第二掃描線上掃描樣品表面。如前所述，在束回掃期間(抽回期間)，即前第一掃描束結束與後第一掃描線開端之間，第二掃描束跨過樣品表面進行掃描。重複進行掃描的作動時序(包含形成第一與第二掃描線)直到形成樣品的影像框。In this embodiment, during a zigzag line scan signal 210, the pre-scan slope signal is selected as the imaging scan, and the post-scan slope is used to indicate the scan beam retrace (pullback). It can be seen that in the same field, technical practitioners can also adopt the opposite arrangement of actions. Therefore, in FIG. 2C, during the transition period of ΔT1, ΔT3, . . . , etc., the trigger reforming scan enable signal 230 is then activated during the successive T2, T4, ..., etc., and the re-scanning is performed during the entire retrace period. That means that imaging scanning is performed during the normal scanning period T1, T3, .... Under this setting, an imaging process of an advance scan or a post scan mode is performed, the scan method of which is designed as follows: using a first scan beam (imaging beam), scanning a sample surface on at least one first scan line, and using a second scan beam (Reforming the beam), scanning the surface of the sample on at least one second scan line. As previously mentioned, during the beam retrace period (during the withdrawal period), that is, between the end of the first first scanning beam and the beginning of the first first scanning line, the second scanning beam is scanned across the surface of the sample. The timing of the scan is repeated (including forming the first and second scan lines) until the image frame of the sample is formed.
以第一掃描束作為成像束，樣品表面都是由第一掃描線所形成。因此，在後期掃描模式的成像掃描，應從“第一次”的第一掃描線信號開始收集形成樣品影像之影像信號。在此案例中，第二掃描束(其為重整束)的掃描操作都是跟隨著第一掃描束(成像束)的成像掃描。因此，先執行的成像掃描所造成的表面電荷情況都被跟隨在後的重整掃描所重整，因而下一成像掃描都能有效的執行並提升影像品質。With the first scanning beam as the imaging beam, the surface of the sample is formed by the first scanning line. Therefore, in the imaging scan of the post-scan mode, the image signal forming the sample image should be collected from the "first" first scan line signal. In this case, the scanning operation of the second scanning beam, which is a reforming beam, is followed by an imaging scan of the first scanning beam (imaging beam). Therefore, the surface charge condition caused by the first imaging scan performed is followed by the subsequent reforming scan, so that the next imaging scan can effectively perform and improve the image quality.
另一方面，在先期掃描模式的成像掃描，應從“第二次”的第一掃描線開始收集用以形成樣品影像的影像信號。也就是說，在最開始形成影像框的信號，第一次的第一掃描線的信號是無用的。這種成像過程可視為由重整第二掃描束所形成的第二掃描線開始。在此情況中，重整掃描先於成像掃描，將樣品表面設定在適當的表面電荷條件，而使後續的成像掃描有效率並提升影像品質。On the other hand, in the imaging scan of the prior scan mode, the image signal used to form the sample image should be collected from the "second time" first scan line. That is to say, at the beginning of the formation of the image frame signal, the signal of the first first scan line is useless. This imaging process can be considered to begin by reforming the second scan line formed by the second scan beam. In this case, the reforming scan precedes the imaging scan to set the surface of the sample to the appropriate surface charge conditions, making subsequent imaging scans efficient and improving image quality.
參考圖3A與圖3B為根據本發明說明成像掃描信號、電荷重整掃描以及掃描線補償位移的觸發信號之時序圖。如圖所示，觸發信號包含線掃描信號310、掃描線補償位移信號320A/320B已及重整掃描啟動信號330。圖3A與圖3B中所定義的線掃描信號310與重整掃描啟動信號330與圖2A至圖2C之定義相同，此處不再贅述。另外，如前文所提，雖然在圖3A與圖3B中，帶電粒子束探針之中心，如所說明的掃描線補償位移信號320A/320B，是沿著y軸方向以階梯式方式逐步移動，其仍可由電子控制或移動樣品台等手段，以連續的方式移動。需進一步說明的是，在二圖中的掃描作動都是重複執行的，直到形成掃描樣品的影像框，以圖中右側黑點(…)來表示。3A and 3B are timing diagrams illustrating trigger signals for imaging scan signals, charge reforming scans, and scan line compensation shifts in accordance with the present invention. As shown, the trigger signal includes a line scan signal 310, a scan line compensated displacement signal 320A/320B, and a reformatted scan enable signal 330. The line scan signal 310 and the reformation scan enable signal 330 defined in FIGS. 3A and 3B are the same as those defined in FIGS. 2A to 2C, and are not described herein again. In addition, as mentioned above, although in FIGS. 3A and 3B, the center of the charged particle beam probe, as illustrated, the scan line compensation displacement signal 320A/320B is stepwisely moved in a stepwise manner along the y-axis direction. It can still be moved in a continuous manner by means of electronic control or moving the sample stage. It should be further noted that the scanning operations in the two figures are repeated until the image frame of the scanned sample is formed, which is represented by the black dot (...) on the right side of the figure.
圖3A與圖3B，在一個鋸齒狀線掃描信號310中，選擇前掃斜率信號為成像掃描之操作，而後掃斜率表示掃描束回掃(抽回)的動作。在同領域之技術人士應了解，實務上亦可採用相反的安排。3A and 3B, in a sawtooth line scan signal 310, the pre-scan slope signal is selected as the operation of the imaging scan, and the post-scan slope represents the scan beam retrace (pullback). Technical personnel in the same field should understand that the opposite arrangement can be applied in practice.
在一個正常以掃描為基礎的帶電粒子束成像過程，每一個成像掃描操作都立即跟隨著束的回掃(抽回)期間，在這期間內，掃描束會被拉回到下一個成像掃描線的起始點。當束拉回期間(抽回期間)結束，即執行下一成像掃描。因此，束抽回路徑是獨立存在且基本上為直線。例如，以這種操作得實施期掃描模式，掃描操作的時序應包含成像掃描緊緊伴隨在回掃(抽回)期間的重整掃描。結果，跟隨在單一的抽回掃掃描線後形成單一的成像掃描線，其中二掃描線的路徑都是直線。In a normal scan-based charged particle beam imaging process, each imaging scan operation immediately follows the beam's retrace (pickback) period during which the scanned beam is pulled back to the next imaging scan line. The starting point. When the bundle pullback period (during the withdrawal period) ends, the next imaging scan is performed. Therefore, the beam withdrawal path is independent and substantially straight. For example, in such an operation to implement a periodic scan mode, the timing of the scan operation should include an imaging scan that is closely accompanied by a rescan scan during retrace (pickback). As a result, a single imaging scan line is formed following a single swept back scan line, where the paths of the two scan lines are straight lines.
例如，圖3A所示案例，在掃描期間T1結束時，成像掃描已經完成後(線掃描信號310的前掃(正)斜率)，過渡期間ΔT1內，在重整掃描未啟動信號310A的指令下，在期間T2(線掃描信號310的回掃(負)斜率，也就是束的抽回期間)的成像掃描，樣品台或束偏轉模組裝置保持相同位置(或相同的掃描線)上，而在過渡期間ΔT1內，由已觸發重整掃描啟動信號330觸發重整掃描並在整個期間T2內執行。結果，重整掃描實際上是在成像掃描相同的位置上被執行，僅是時間在成像掃描之後進行。接著，在過渡期間ΔT2，下一個前掃斜率的線掃描信號310觸發下一個成像掃描(接著在掃描期間T3進行)，在已觸發的掃描線補償位移信號320A之指令下，沿y軸方向，在過渡期間ΔT2內，樣品台或由偏轉模組將掃描位置移動一個單位而指向下一掃描線進行掃描並成像。圖3A所示實施例的其他作動的細節與先前搭配圖2A至圖2C的前文相似，此處不再贅述。For example, in the case shown in FIG. 3A, after the imaging scan has been completed (the front scan (positive) slope of the line scan signal 310) at the end of the scan period T1, during the transition period ΔT1, under the command of the reform scan unstart signal 310A , during the imaging scan of period T2 (the retrace (negative) slope of the line scan signal 310, that is, during the withdrawal of the beam), the sample stage or beam deflection module device remains in the same position (or the same scan line), and During the transition period ΔT1, the reformatting scan is triggered by the triggered reformatting start signal 330 and is executed during the entire period T2. As a result, the reforming scan is actually performed at the same position of the imaging scan, only the time is performed after the imaging scan. Then, during the transition period ΔT2, the line scan signal 310 of the next pre-scan slope triggers the next imaging scan (and then during the scan period T3), under the command of the triggered scan line compensation displacement signal 320A, along the y-axis direction, During the transition period ΔT2, the sample stage or the deflection module moves the scanning position by one unit and points to the next scanning line for scanning and imaging. The details of the other actuations of the embodiment shown in FIG. 3A are similar to those of the previous description of FIGS. 2A through 2C, and are not described herein again.
本實施例中，在整個期間T1內，因為僅觸發一個前掃斜率的線掃描信號310，僅形成一(成像)掃描線。相似的，在整個期間T2內，僅觸發一個回掃斜率的線掃描信號310，僅形成一(重整)掃描線。了解此技術之人事可理解，因為掃描束(成像或是重整)基本上都是分別由前掃斜率或是前回掃斜率的線掃描信號來回驅動的，所以重整掃描線是延續自著成像掃描線的相反方向。另外，如圖所示之實施例，在線掃描信號310的回掃斜率的期間較線掃描信號310的前掃斜率的期間長，表示重整掃描比成像掃描的速度慢。In the present embodiment, only the (imaging) scan line is formed in the entire period T1 because only the line scan signal 310 of one pre-scan slope is triggered. Similarly, during the entire period T2, only one line scan signal 310 of the retrace slope is triggered, and only one (reformed) scan line is formed. The understanding of this technique is understandable, because the scanning beam (imaging or reforming) is basically driven back and forth by the line scan signal of the front sweep slope or the front retrace slope, respectively, so the reforming scan line is a continuous self-image. The opposite direction of the scan line. Additionally, as shown in the illustrated embodiment, the period of the retrace slope of the line scan signal 310 is longer than the period of the pre-scan slope of the line scan signal 310, indicating that the reforming scan is slower than the speed of the imaging scan.
本發明中，延伸定義束抽回期間。束抽回期間定義為成像掃描帶電粒子束探針的前一成像掃描的結束點到下一個一成像掃描起始點的時間區間，在此期間內不執行成像掃描。這裡的束抽回期間與結合圖3A說明的前文所定義的束抽回期間的主要差異是在二成像掃描線間形成多個重整掃描線，而在兩個重整掃描期間也可形成多個成像掃描線。另外，熟悉此技術的人士可理解，因掃描束是受到前掃斜率或是前回掃斜率的線掃描信號310驅動而來回掃描的，實際上，這些掃描線的路徑是呈現曲折形狀的。In the present invention, the extension defines the beam withdrawal period. The beam withdrawal period is defined as the time interval from the end point of the previous imaging scan of the imaging scanned charged particle beam probe to the start point of the next imaging scan, during which no imaging scan is performed. The main difference between the beam withdrawal period and the beam withdrawal period defined above in connection with FIG. 3A is that a plurality of reforming scan lines are formed between the two imaging scan lines, and a plurality of reforming scan lines can be formed during the two reforming scans. Imaging scan lines. In addition, those skilled in the art will appreciate that the scanning beam is scanned back and forth as the scanning beam is driven by the line scan signal 310 of the pre-scan slope or the front retrace slope. In fact, the paths of the scan lines are in a meander shape.
如圖3B所示後掃描模式之案例。圖3B說明延伸定義的成像掃描期間T1的期間內，執行多重(n-fold)線的平均成像掃描，以及延伸定義的回掃期間T2的期間內，執行多重(m-fold)線的平均重整掃描。如圖所示，在圖3B中n為2而m為3。又如所示，在期間T1結束時，在過渡期間ΔT1內，已經完成成像掃描之後，在未啟動線補償位移信號320B指令的期間T2內已執行成像掃描，而樣品台或束偏轉模組將掃描位置保持相同的掃描線上，而在過渡期間ΔT1內，已觸發的重整掃描啟動信號330觸發重整掃描，接著在整個期間T2內進行重整掃描。結果，在成像掃描的相同位置上進行重整掃描，只是時間是成像掃描之後。接著，在過渡期間ΔT2內，由下一個前掃斜率的線掃描信號310觸發下一個成像掃描(且在整個期間T3內執行)之前，在的過渡期間ΔT2內，已觸發的線補償位移信號320B的指令下，樣品台或偏轉模組裝置將掃描位置，沿y軸方向移動一個單位，指向下一條線的位置，掃描並成像。圖3B的其他作動之細節與結合圖2A至圖2C以及圖3A前文所述之實施例相似，此處不再贅述。The case of the post-scan mode shown in Figure 3B. 3B illustrates the average imaging weight of the m-fold line being performed during the period of the extended imaging scan period T1 during which the average imaging scan of the n-fold line is performed, and during the defined retrace period T2. Full scan. As shown, in Fig. 3B, n is 2 and m is 3. As also shown, at the end of the period T1, after the imaging scan has been completed during the transition period ΔT1, the imaging scan has been performed during the period T2 during which the line compensation displacement signal 320B is not activated, and the sample stage or beam deflection module will The scan position remains on the same scan line, and during the transition period ΔT1, the triggered reform scan enable signal 330 triggers a rescan scan, followed by a rescan scan over the entire period T2. As a result, the reforming scan is performed at the same position of the imaging scan, except that the time is after the imaging scan. Then, during the transition period ΔT2, the triggered line compensation displacement signal 320B is within the transition period ΔT2 before the next imaging scan is triggered by the line scan signal 310 of the next pre-sweep slope (and is performed during the entire period T3). Under the command, the sample stage or deflection module device will scan the position, move one unit along the y-axis direction, point to the position of the next line, scan and image. The details of the other actuations of FIG. 3B are similar to the embodiments described above in connection with FIGS. 2A-2C and 3A, and are not described herein again.
本實施例中，在期間T1內，觸發多個線掃描信號310的前掃斜率與後掃斜率信號，而在整個期間T1形成多重的(成像)掃描線；相似的，在期間T2內，觸發多個線掃描信號310的前掃與後掃信號，而在整個期間T2內，形成多重的(成像)掃描線。更如所示，因掃描束是分別受到線掃描信號310的前掃斜率或是前回掃斜率信號的驅動而來回掃描的，因成像或是重整掃描線所形成的掃描路徑是曲折的。因此，熟悉此技術的人士可理解，在所形成的重整掃描線中，有些是沿著成像掃描的方向，而有些是沿著成像掃描線的相反方向。In this embodiment, during the period T1, the pre-scan slope and the post-scan slope signal of the plurality of line scan signals 310 are triggered, and multiple (imaging) scan lines are formed during the whole period T1; similarly, during the period T2, the trigger is triggered. The pre-sweep and post-sweep signals of the plurality of line scan signals 310, and during the entire period T2, multiple (imaging) scan lines are formed. More as shown, since the scanned beam is scanned back and forth by the front scan slope of the line scan signal 310 or the front retrace slope signal, the scan path formed by imaging or reforming the scan line is tortuous. Thus, those skilled in the art will appreciate that some of the reforming scan lines formed are in the direction of the imaging scan and some are in the opposite direction of the imaging scan line.
需特別注意的是，即使在圖3A與圖3B所示本發明之實施例，用以說明在抽回期間，可容許形成單一或多重重整掃描線後期掃描模式等特殊案例。相似的構想與實施亦可應用於先期掃描模式。It is to be noted that even in the embodiment of the present invention shown in Figs. 3A and 3B, it is explained that special cases such as single or multiple reforming scan line post-scan mode can be tolerated during the retraction. Similar concepts and implementations can also be applied to the prior scan mode.
結合圖2(包含圖2A至圖2C)以及圖3(包含圖3A與圖3A)所提議的方法，可用控制器的形式實現，其耦合至一般的帶電粒子束成像系統100，如圖1所示。控制器可實作為純硬體如獨立IC、韌體或純軟體。例如，將控制器實現為電腦可讀取之編碼程式，這一程式能夠下達指令並協調整合帶電粒子束成像系統100的相關元件，而精確的執行如圖2與圖3所例示，本發明所提議之方法。The method proposed in connection with FIG. 2 (including FIGS. 2A-2C) and FIG. 3 (including FIGS. 3A and 3A) can be implemented in the form of a controller coupled to a general charged particle beam imaging system 100, as shown in FIG. Show. The controller can be implemented as a pure hardware such as a stand-alone IC, firmware or pure software. For example, the controller is implemented as a computer readable code program capable of issuing instructions and coordinating the integration of the components of the charged particle beam imaging system 100, and the precise execution is illustrated in Figures 2 and 3, the present invention Proposed method.
實務上，請再次參考圖1，電腦可設計為指示帶電粒子束成像系統，首先利用第一掃描束，在至少一第一掃描線上，在樣品195進行掃描，然後利用第二掃描束，在至少一第二掃描線上進行掃描。如同前文所述，第二掃描束是在前一次的第一掃描線結束時與下一次的第一掃描線的起始時的時間區間內，跨過樣品表面來進行掃描，即束回掃(抽回)期間。又如，掃描的時序(包含第一掃描線與第二掃描線的形成)是不斷重複的，直到形成樣品195影像框。In practice, referring again to FIG. 1, the computer can be designed to indicate a charged particle beam imaging system, first using a first scan beam, scanning at a sample 195 on at least a first scan line, and then utilizing a second scan beam, at least Scanning is performed on a second scan line. As described above, the second scan beam is scanned across the surface of the sample during the time interval from the end of the previous first scan line and the start of the next first scan line, ie, beam retrace ( Withdrew). As another example, the timing of the scan (including the formation of the first scan line and the second scan line) is repeated until the sample 195 image frame is formed.
於一實施例中，第一掃描束用以成像掃描，而第二掃描束用以重整掃描。因此如前文所述，對於後期掃描模式，首先由第一掃描線形成樣品195的影像，而由第二掃描束重整前一次成像掃描所造成的表面電荷。對於前期掃描模式，執行相同的掃描操作順序，樣品195之影像仍可以被設計成由第一掃描線來形成，只是捨去最開始之第一掃描線所形成的影像框。也就是說，首先由第二掃描線重整樣品195的表面電荷，然後由第一掃描線之第二次掃描開始取樣。這一個過程不斷被重複，直到形成樣品195的影像框。In one embodiment, the first scan beam is used for image scanning and the second scan beam is used for reformatting. Therefore, as described above, for the post-scan mode, the image of the sample 195 is first formed by the first scan line, and the surface charge caused by the previous imaging scan is reformed by the second scan beam. For the previous scan mode, the same scan sequence is performed, and the image of sample 195 can still be designed to be formed by the first scan line, except that the image frame formed by the first scan line is discarded. That is, the surface charge of the sample 195 is first reformed by the second scan line, and then the sampling is started by the second scan of the first scan line. This process is repeated until the image frame of sample 195 is formed.
如前文所述，第一掃描束與第二掃描束將分別感應出第一表面電荷情況與第二表面電荷情況。例如，在後期掃描模式，當執行表面電荷重整，第二表面電荷情況與第一表面電荷情況交互作用而形成淨表面電荷情況，其提供有利於下一成像掃描的電荷情況，細節已述於前文，此不再贅述。As described above, the first scan beam and the second scan beam will respectively induce a first surface charge condition and a second surface charge condition. For example, in the post-scan mode, when surface charge reforming is performed, the second surface charge condition interacts with the first surface charge condition to form a net surface charge condition that provides a charge condition that facilitates the next imaging scan, as described in detail. In the foregoing, this is not repeated here.
另外，如圖2與圖3之示例，可在樣品195成像掃描的相同位置上或在成像掃描的鄰近處執行重整掃描。也就是說，第二掃描線可以與第一掃描線重合或分離。然而，須特別注意的是，重整(第二)掃描束的有效覆蓋區域應包含前一成像(第一)掃描線或下一掃描線，能夠有效的重整樣品表面電荷，而能夠在後續的成像掃描獲得較佳的影像品質。Additionally, as in the examples of FIGS. 2 and 3, a reforming scan can be performed at the same location where the sample 195 is imaged for scanning or adjacent to the imaging scan. That is, the second scan line may coincide or be separated from the first scan line. However, it is important to note that the effective coverage area of the reformed (second) scanned beam should contain the previous imaging (first) scan line or the next scan line, which can effectively reform the surface charge of the sample and can be subsequently The imaging scan achieves better image quality.
又如在本發明之某些實施中，如圖3A與圖3B之示例，在二成像掃描線之間形成單一的重整掃描線，以及在二重整掃描線之間，形成單一的成像掃描線。而在另外的實施例中，於二成像掃描線之間形成多重的重整掃描線，而在二重整掃描線之間，形成多重的成像掃描線。在後一案例，所形成重整掃描線的路徑實質上是曲折的形狀，因此重整掃描線實際上可以與成像掃描線的方向相同或相反，也就是說第二掃描線可延伸是沿著第一掃描線之成像掃描線相同或是相反的方向。As still in some implementations of the invention, as in the example of Figures 3A and 3B, a single reforming scan line is formed between the two imaging scan lines, and a single imaging scan is formed between the two reformed scan lines. line. In still other embodiments, multiple reformed scan lines are formed between the two imaging scan lines, and between the double scan lines, multiple image scan lines are formed. In the latter case, the path of the reformed scan line formed is substantially a tortuous shape, so the reforming scan line may actually be the same or opposite to the direction of the imaging scan line, that is, the second scan line may be extended along The imaging scan lines of the first scan line are in the same or opposite directions.
回顧本發明之所述，束回掃(抽回)期間是定義為帶電粒子束成像系統的前一成像掃描線的結束時與下一成像掃描線之開始時之時間區間，期間內並不執行成像掃描。同時回顧所述之實施例，可以在回掃(抽回)期間內執行單一或是多重重整掃描線。從電腦程式執行的觀點，第二掃描作動(形成第二掃描線)之期間可定義為回掃(抽回)期間較為便利。結果，在前一第一掃描線結束時與下一第一掃描線開始時之時間區間內，由第二掃描束跨過樣品表面進行掃描。Recalling the invention, the beam retrace period is defined as the time interval between the end of the previous imaging scan line of the charged particle beam imaging system and the beginning of the next imaging scan line, and is not executed during the period. Imaging scan. While reviewing the described embodiments, single or multiple reformatted scan lines can be performed during the flyback (pullback) period. From the viewpoint of execution of the computer program, the period during which the second scanning is performed (forming the second scanning line) can be defined as a period of retrace (withdrawal). As a result, the second scanning beam is scanned across the surface of the sample during the time interval between the end of the previous first scanning line and the beginning of the next first scanning line.
請參考圖4，其繪示根據本發明實施例之一帶電粒子束成像系統400。如圖所示，帶電粒子束成像系統400至少包含掃描束探針供應器410、偏轉模組420、樣品台430以及控制器440。掃描束探針供應器410用以提供掃描束探針411，其包含至少一第一掃描束探針412以及一第二掃描束探針413(並未分開標示)。為提供這些束探針，掃描束探針供應器410可包含至少一束源以及一凝聚/聚焦光學透鏡組，偏轉模組420用以偏轉所提供掃描束探針411，而能夠跨過置於樣品台430上的樣品450表面進行掃描以成像。控制器440至少耦合至掃描束探針供應器410、偏轉模組420以及樣品台430。為了使帶電粒子束探針成像系統400執行帶電粒子束成像，控制器440下達指令並整合協調掃描束探針供應器410以提供掃描束探針411、偏轉模組420以偏轉所提供掃描束探針411跨過樣品450的表面進行掃描，以及樣品台430用以與掃描束探針411進行相對運動。Please refer to FIG. 4, which illustrates a charged particle beam imaging system 400 in accordance with an embodiment of the present invention. As shown, the charged particle beam imaging system 400 includes at least a scanning beam probe supply 410, a deflection module 420, a sample stage 430, and a controller 440. The scanning beam probe supply 410 is configured to provide a scanning beam probe 411 comprising at least a first scanning beam probe 412 and a second scanning beam probe 413 (not separately labeled). To provide these beam probes, the scanning beam probe supply 410 can include at least one beam source and a coherent/focus optical lens assembly for deflecting the provided scanning beam probe 411 while being able to be placed across The surface of sample 450 on sample stage 430 is scanned for imaging. Controller 440 is coupled to at least scan beam probe supply 410, deflection module 420, and sample stage 430. In order for the charged particle beam probe imaging system 400 to perform charged particle beam imaging, the controller 440 issues instructions and integrates the coordinated scan beam probe supply 410 to provide the scanned beam probe 411, the deflection module 420 to deflect the provided scanning beam probe. The needle 411 is scanned across the surface of the sample 450, and the sample stage 430 is used for relative movement with the scanning beam probe 411.
如前所述，掃描束探針411包含至少二個掃描束探針，第一掃描束探針412與第二掃描束探針413。實務上，二束探針中的一個用以對樣品450成像，另一用以重整表面電荷。回顧成像掃描束必須是帶電粒子束探針，例如電子或離子束探針。若掃描束探針412與413兩者都是電子束或離子束，控制器440可以下達指令使掃描束探針供應器410可製造出兩個至少在一個在束條件(參數)彼此不同的束探針，例如束的撞擊能量、束流密度、聚焦、束斑、束在樣品450上的入射角等等，使得其能夠執行成像及電荷重整個別的功能。更進一步，為提供掃描束探針412與413，掃描束探針供應器410可包含分離的束源，各自產生二束中的一個。可選擇的，掃描束探針412與413可以是相同類型，如離子束或電自束，其更可來自於包含在束探針供應器410的單一的束源。As previously described, the scanning beam probe 411 includes at least two scanning beam probes, a first scanning beam probe 412 and a second scanning beam probe 413. In practice, one of the two probes is used to image the sample 450 and the other is used to reform the surface charge. It is recalled that the imaging scan beam must be a charged particle beam probe, such as an electron or ion beam probe. If both of the scanning beam probes 412 and 413 are electron beams or ion beams, the controller 440 can issue an instruction to cause the scanning beam probe supply 410 to produce two beams that differ from each other in at least one beam condition (parameter). Probes, such as beam impact energy, beam density, focus, beam spot, beam incidence angle on sample 450, etc., enable it to perform imaging and charge re-functioning. Still further, to provide scan beam probes 412 and 413, scan beam probe supply 410 can include separate beam sources, each of which produces one of the two beams. Alternatively, scan beam probes 412 and 413 may be of the same type, such as an ion beam or an electrical self-beam, which may be derived from a single beam source included in beam probe supply 410.
於一實施例中，在樣品450的成像期間，控制器440控制掃描束探針供應器410或者說束源，以控制個別掃描束探針412與413的開啟/關閉的狀態。例如，透過束源之開關或使在掃描束探針供應器410的遮蔽裝置功能之開關來達成。可選擇的，若掃描束探針412與413是相同型態的束探針，但束的情條件(參數)不同，如前所述，開關狀態可以由控制器440控制，其用以下達指令予掃描束探針供應器410以改變其數條件(參數)，例如以即時的方式，調整束的凝聚/聚焦光學鏡組的條件(參數)。結果，成像與重整的動作能夠由各自的掃描束探針412與413，在樣品450表面，交錯執行。In one embodiment, during imaging of the sample 450, the controller 440 controls the scanning beam probe supply 410 or beam source to control the on/off state of the individual scanning beam probes 412 and 413. This is accomplished, for example, by a switch of the beam source or by a switch that scans the function of the masking device of the beam probe supply 410. Alternatively, if the scanning beam probes 412 and 413 are the same type of beam probes, but the beam conditions (parameters) are different, as described above, the switch state can be controlled by the controller 440, which uses the following commands. The beam probe supply 410 is scanned to change its number of conditions (parameters), for example, to adjust the conditions (parameters) of the condensing/focusing optics of the beam in an instant manner. As a result, the imaging and reforming actions can be performed alternately on the surface of the sample 450 by the respective scanning beam probes 412 and 413.
於一實施例中，控制器440包含編碼為電腦可讀取媒介之程式，用以執行，如圖2與圖3所所提議之方法。當然，控制器能夠整合協調帶電粒子束成像系統400的相關元件，例如掃描束探針供應器410、偏轉模組420以及樣品台430，以利用帶電粒子束成像系統400執行本發明前述實施例中所有相關細節。In one embodiment, controller 440 includes a program encoded as a computer readable medium for performing the methods as suggested in Figures 2 and 3. Of course, the controller can integrate the associated components of the charged particle beam imaging system 400, such as the scanning beam probe supply 410, the deflection module 420, and the sample stage 430, to perform the foregoing embodiments of the present invention with the charged particle beam imaging system 400. All relevant details.
雖然本發明已連同實施例揭示如上，然其並非用以限定本發明，任何本技術領域中具有通常知識者，在不脫離本發明的精神和範圍內，當可作些許的更動與潤飾，因此本發明的保護範圍應視後附的申請專利範圍其所界定者為準。While the present invention has been described above in connection with the embodiments, the present invention is not intended to limit the scope of the present invention, and it is possible to make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention should be determined by the scope of the appended claims.
100．．．帶電粒子束成像系統100. . . Charged particle beam imaging system
110．．．帶電粒子束源110. . . Charged particle beam source
120．．．聚焦透鏡模組120. . . Focusing lens module
130．．．物鏡模組130. . . Objective lens module
140．．．帶電粒子束探針140. . . Charged particle beam probe
150．．．偏轉單元150. . . Deflection unit
160．．．二次帶電粒子160. . . Secondary charged particle
170．．．偵測器170. . . Detector
180．．．泛射槍180. . . Pan gun
190．．．樣品台190. . . Sample stage
195．．．樣品195. . . sample
T1、T2、T2、T4．．．掃描期間T1, T2, T2, T4. . . During scanning
△T1、△T2、△T3、△T4．．．過渡期間△T1, △T2, △T3, △T4. . . Transition period
210、310‧‧‧線掃描信號210, 310‧‧‧ line scan signal
220A、220B、220C、320A、320B‧‧‧補償位移信號220A, 220B, 220C, 320A, 320B‧‧‧ Compensation displacement signals
230、330‧‧‧重整掃描啟動信號230, 330‧‧‧Rescan scan start signal
400‧‧‧帶電粒子束成像系統400‧‧‧Powered particle beam imaging system
410‧‧‧掃描束探針供應器410‧‧‧Scanning beam probe supply
411、412、413‧‧‧掃描束探針411, 412, 413‧‧ ‧ scanning beam probe
420‧‧‧偏轉模組420‧‧‧ deflection module
430‧‧‧樣品台430‧‧‧Sample table
440‧‧‧控制器440‧‧‧ Controller
450‧‧‧樣品450‧‧‧ samples
圖1所示為根據先前技術之帶電粒子束成像系統。Figure 1 shows a charged particle beam imaging system in accordance with the prior art.
圖2A至圖2C所示為根據本發明之成像掃描信號、重整掃描啟動信號以及掃描線補償位移信號之時序圖。2A to 2C are timing charts showing an imaging scan signal, a reforming scan enable signal, and a scan line compensation shift signal according to the present invention.
圖3A與圖3B所示為根據本發明之成像掃描信號、重整掃描啟動信號以及掃描線補償位移信號之時序圖。3A and 3B are timing diagrams of an imaging scan signal, a reforming scan enable signal, and a scan line compensation shift signal in accordance with the present invention.
圖4所示為根據本發明一實施例之帶電粒子束成像系統。4 shows a charged particle beam imaging system in accordance with an embodiment of the present invention.
T1、T2、T3、T4‧‧‧掃描期間T1, T2, T3, T4‧‧‧ scan period
△T1、△T2、△T3、△T4‧‧‧過渡期間△T1, △T2, △T3, △T4‧‧‧ transition period
210‧‧‧線掃描信號210‧‧‧ line scan signal
220A‧‧‧補償位移信號220A‧‧‧Compensated displacement signal
230‧‧‧重整掃描啟動信號230‧‧‧Rescan scan start signal
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| US12/420,200 US8884224B2 (en) | 2009-04-08 | 2009-04-08 | Charged particle beam imaging assembly and imaging method thereof |
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| US10032602B2 (en) * | 2015-06-15 | 2018-07-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for imaging wafer with focused charged particle beam in semiconductor fabrication |
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