TWI404218B - A thin film solar cell module capable of improving contact between front and rear electrodes, and a method of manufacturing the same - Google Patents
A thin film solar cell module capable of improving contact between front and rear electrodes, and a method of manufacturing the same Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000000463 material Substances 0.000 claims description 24
- 229910000679 solder Inorganic materials 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 12
- 239000011521 glass Substances 0.000 claims description 12
- 229910052732 germanium Inorganic materials 0.000 claims description 9
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 claims description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- FWPIOHJLMYTOSC-UHFFFAOYSA-N [B]=O.[Zn] Chemical compound [B]=O.[Zn] FWPIOHJLMYTOSC-UHFFFAOYSA-N 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- 239000006096 absorbing agent Substances 0.000 abstract 2
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 238000009795 derivation Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- UIPVMGDJUWUZEI-UHFFFAOYSA-N copper;selanylideneindium Chemical compound [Cu].[In]=[Se] UIPVMGDJUWUZEI-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
- H01L31/0201—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising specially adapted module bus-bar structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Electromagnetism (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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Description
本發明係關於一種太陽能電池,尤其係關於一種使正極或負極之前後電極直接接觸之薄膜太陽能電池模組及其製造方法。
太陽能電池(solar cell)是一種可進行光電能量轉換之元件,因此又稱為光伏特電池(Photovoltaic,簡稱PV)。太陽能電池的種類繁多,其吸收層材料包含單晶矽(single crystal silicon)、多晶矽(polycrystal silicon,poly-Si)、非晶矽(amorphous silicon,a-Si)、Ⅲ-Ⅴ族化合物包括砷化鎵(GaAs)、磷化銦(InP)、磷化鎵銦(InGaP)以及Ⅱ-Ⅵ族化合物包括碲化鎘(CdTe)、硒化銦銅(CuInSe2
)等。
太陽能電池之結構主要包含基板、前電極層、吸收層與背電極層,其中吸收層可進行吸收入射光以產生電子-電洞對之光伏特效應,並藉由內建電場作用使電子和電洞往相反的方向移動,且自二端之正負電極輸出電壓伏特值;為使二端電極產生之電流可自太陽能電池輸出,需於二端電極分別設置銲接凸塊(solder bump),使前電極層與背電極層藉由銲接凸塊電性連接並導出電流。
一般而言,銲接凸塊需利用超音波或振動方式由背電極層向下設置至可接觸前電極層之位置,由於向下設置時因該些方式的輸出功率不易掌控,常導致完成後之銲接凸塊較難如預期位在適當處,例如造成銲接凸塊所在位置不夠深入,無法接觸到至前電極層之狀況,或銲接凸塊所在位置過於深入,而凸出於基板,反而會影響基板之美觀性的問題等;此外,位於太陽能電池正極所設銲接凸塊處之吸收層產生的電流,並無法藉由銲接凸塊導出,因此該處所產生電流便成為無法被有效利用之無用(useless)電流,若該處吸收層持續進行光伏特效應並生成電流,會造成正極之無用電流的累積,而無用電流的累積會形成熱能並導致正極處之溫度上昇;再者,正極部份易因與一般用電接觸時之串聯或並聯,而產生逆向電流(reverse current),逆向電流於正極處遇到形同電阻之吸收層時會生成熱能,使該處溫度攀升,因此習知太陽能電池正極之銲接凸塊處常會有溫度升高的問題,且若該溫度過高,會影響太陽能電池元件的正常運作,甚至造成元件的損壞。另一方面,習知太陽能電池位於負極之前電極層與背電極層僅能藉由銲接凸塊呈電性連接,造成兩電極層接觸面積小,故其導電量亦有限,此亦係有待解決之問題。
為改善習知太陽能電池之銲接凸塊設置位置不易掌控所致缺點,並解決正極產生熱能導致溫度過高之弊端以及負極之前後電極層接觸面積小所引發導電量受限之問題,本發明係提供一種可增進前後電極接觸之薄膜太陽能電池模組,其係利用遮罩之遮蔽作用移除正極或負極可導出電流區域之光吸收層,藉以使該區域之前後電極可直接接觸,並減少正極之無用電的形成及電阻,進而降低熱能產生,避免溫度的提昇。
本發明之一目的係提供一種薄膜太陽能電池模組,包括一基板,一形成於基板之上的第一電極層,一形成於第一電極層之上的光吸收層,一形成於光吸收層之上的第二電極層,以及一電流導出區,其係形成於該薄膜太陽能電池模組之正極、負極或同時形成於正極與負極,且設置一電流導出元件例如銲錫,以供導出該光吸收層產生之電流,位於該電流導出區之第一電極層與第二電極層係直接接觸,藉以增進第一電極層與第二電極層之接觸面積,並減少無用電流及電阻,進而降低熱能的產生。
本發明之另一目的係提供一種薄膜太陽能電池模組之製造方法,其步驟包括:(1)提供一基板;(2)於基板之上形成一第一電極層;(3)於該薄膜太陽能電池模組中預設一電流導出區,並於位在電流導出區之該第一電極層之上覆蓋一遮罩(mask);(4)於第一電極層之上利用沈積法或濺鍍法形成一光吸收層,並藉由遮罩使光吸收層無法形成於位在電流導出區之第一電極層之上;(5)於光吸收層之上形成一第二電極層,而位在電流導出區之該第二電極層與該第一電極層係直接接觸;以及(6)於電流導出區設置一電流導出元件例如銲錫,藉以導出該光吸收層產生之電流,其中,電流導出區係形成於該薄膜太陽能電池模組之正極、負極或同時形成於正極與負極,且由於位在電流導出區之第二電極層與第一電極層係直接接觸,因此可增進第一電極層與第二電極層之接觸面積,並減少無用電流及電阻,進而降低熱能的產生。
該薄膜太陽能電池模組之各結構層的材質分別係:基板之材質係選自於由鈉玻璃(SLG)、低鐵白玻璃及無鹼玻璃所組成的群組;光吸收層之材料係選自於由非晶矽(a-Si)、多晶矽(poli-Si)、微晶矽(microcrystalline silicon,mc-Si)以及微晶矽鍺(microcrysatlline silicon germanium;mc-SiGe)所組成的群組;第一電極層之材質係為透明導電氧化物(transparent conducting oxide,TCO);第二電極層之材質係為透明導電氧化物(TCO)、金屬或金屬與透明導電氧化物所組成之複合物,其中該透明導電氧化物係選自於由氧化銦錫(ITO)、氧化銦鋅(IZO)、氧化鋁鋅(AZO)、氧化硼鋅(BZO)、氧化鎵鋅(GZO)以及氧化鋅(ZnO)所組成之族群,而金屬之材料係選自由鋁、鎳、金、銀、鉻、鈦以及鈀所組成之群組。
藉由本發明之薄膜太陽能電池模組及其製造方法,除可增進正極或負極處之第一電極層與第二電極層之接觸面積以增加導電量之外,由於正極處電流導出區之光吸收層已藉由製程省時之遮罩方式被移除,此可大幅減低無用電的產生,進而減少無用電所致熱能的形成,並可降低電阻,藉以避免逆向電流遇到電阻而產熱,因此本發明之模組及其製造方法係可有效減低正極熱能的產生,達到降低正極溫度之目的,且避免因高溫所致太陽能電池元件壞損的問題發生;另一方面,由於正極或負極處之第一電極層與第二電極層可直接接觸,因此電流導出元件之設置位置毋須非常精準,故此可解決習知太陽能電池之銲接凸塊設置位置因難以掌握而造成無法使前後電極電性連接或影響基板美觀等缺點。
以下將配合圖式進一步說明本發明的實施方式,下述所列舉的實施例係用以闡明本發明,並非用以限定本發明之範圍,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可做些許更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
請同時參閱第一A圖,該圖係本發明薄膜太陽能電池模組一較佳實施例之剖視圖。該薄膜太陽能電池10係包含一基板11,一形成於基板11之上的第一電極層12,一形成於第一電極層12之上的光吸收層13,一形成於光吸收層13之上的第二電極層14,以及一電流導出區15,其係形成於該薄膜太陽能電池模組之正極,電流導出區15係設置有一電流導出元件151例如銲錫等可導出電流之材質,以供導出光吸收層13產生之電流,且位於電流導出區15之第一電極層12與第二電極層14係直接接觸,藉以增進第一電極層12與第二電極層14之接觸面積,且由於電流導出區151之光吸收層13面積減少,光電流生成量亦相對減少,並能減少電阻,因此可降低電流導出區151之無用電流的產生,減少無用電流造成之產熱狀況,以及降低逆向電流因遇到電阻所形成之熱能,進而減低正極之熱能產生,達到降低正極溫度之目的,以避免過高溫度所致元件損壞的問題。並減少無用電流及電阻,進而降低熱能的產生。
電流導出區15亦可係形成於該薄膜太陽能電池模組之負極,並藉由第一電極層12與第二電極層14之直接接觸,而增進其導電量。
另一方面,可同時於該薄膜太陽能電池模組之正極與負極各形成有電流導出區15(請參閱第一B圖),同前述,位於正極與負極之電流導出區15的第一電極層12與第二電極層14係直接接觸,藉以達到增加兩電極間之接觸面積、增進負極導電量以及降低正極之熱能產生等目的。
此外,由於正極或負極處之第一電極層12與第二電極層14可直接接觸,因此電流導出元件151之設置位置毋須非常精準,其可僅設置於第二電極層14(如第一B圖所示),故本發明實施例之結構可避免無法準確控制電流導出元件151之設置位置所導致之前後電極無法電性連接或影響基板美觀等問題的發生。
請參閱第二圖,該圖係本發明薄膜太陽能電池模組之製造方法之一較佳實施例的流程圖,其步驟包括:(1)提供一基板S10;(2)於基板之上形成一第一電極層S11;(3)於薄膜太陽能電池模組中預設一電流導出區,並於位在電流導出區之第一電極層之上覆蓋一遮罩(mask)S12;(4)於第一電極層之上形成一光吸收層,並藉由遮罩使光吸收層無法形成於位在電流導出區之第一電極層之上S13;(5)於光吸收層之上形成一第二電極層,而位在電流導出區之第二電極層與第一電極層係直接接觸S14;以及(6)於電流導出區設置一電流導出元件S15,此電流導出元件係可為銲錫等可導出電流之材質,藉以導出該光吸收層產生之電流。其中,電流導出區係形成於該薄膜太陽能電池模組之正極、負極或同時形成於正極與負極,且由於位在電流導出區之第二電極層與第一電極層係直接接觸,因此可增進第一電極層與第二電極層之接觸面積,並減少無用電流及電阻,進而降低熱能的產生。光吸收層係利用沈積法或濺鍍法而形成於第一電極層之上,但不以此為限。此外,步驟(3)所述遮罩係依據所欲遮蔽區域設計而成,藉由步驟(3)遮罩提供之遮蔽作用可快速去除位於電流導出區15之光吸收層13,而可減少整個製程所需花費時間。
該薄膜太陽能電池模組之各結構層的材質分別係:基板11之材質係選自於由鈉玻璃(SLG)、低鐵白玻璃及無鹼玻璃所組成的群組;光吸收層13之材料係選自於由非晶矽(a-Si)、多晶矽、微晶矽(microcrystalline silicon,mc-Si)以及微晶矽鍺(microcrysatlline silicon germanium;mc-SiGe)所組成的群組;第一電極層12之材質係為透明導電氧化物(transparent conducting oxide,TCO);第二電極層14之材質係為透明導電氧化物(TCO)、金屬或金屬與透明導電氧化物所組成之複合物,其中該透明導電氧化物係選自於由氧化銦錫(ITO)、氧化銦鋅(IZO)、氧化鋁鋅(AZO)、氧化硼鋅(BZO)、氧化鎵鋅(GZO)以及氧化鋅(ZnO)所組成之族群,而金屬之材料係選自由鋁、鎳、金、銀、鉻、鈦以及鈀所組成之群組。
10...薄膜太陽能電池
11...基板
12...第一電極層
13...光吸收層
14...第二電極層
15...電流導出區
151...電流導出元件
S10...提供一基板
S11...於基板之上形成一第一電極層
S12...於薄膜太陽能電池模組中預設一電流導出區,並於位在電流導出區之第一電極層之上覆蓋一遮罩
S13...於第一電極層之上形成一光吸收層,並藉由遮罩使光吸收層無法形成於位在電流導出區之第一電極層之上
S14...於光吸收層之上形成一第二電極層,而位在電流導出區之第二電極層與第一電極層係直接接觸
S15...於電流導出區設置一電流導出元件
第一A圖係本發明薄膜太陽能電池模組之一較佳實施例的剖視圖。(箭頭代表入射光)
第一B圖係本發明薄膜太陽能電池模組之另一較佳實施例的剖視圖。(箭頭代表入射光)
第二圖係本發明薄膜太陽能電池模組之製造方法之一較佳實施例的流程圖。
10...薄膜太陽能電池
11...基板
12...第一電極層
13...光吸收層
14...第二電極層
15...電流導出區
151...電流導出元件
Claims (21)
- 一種薄膜太陽能電池模組,包括:一基板;一第一電極層,係形成於該基板之上;一光吸收層,係形成於該第一電極層之上;一第二電極層,係形成於該光吸收層之上;以及一電流導出區,係設置一電流導出元件,以供導出該光吸收層產生之電流,位於該電流導出區之該第一電極層與該第二電極層係直接接觸。
- 如申請專利範圍第1項所述之薄膜太陽能電池模組,其中該電流導出區係位於該薄膜太陽能電池模組之正極。
- 如申請專利範圍第1項所述之薄膜太陽能電池模組,其中該電流導出區係位於該薄膜太陽能電池模組之負極。
- 如申請專利範圍第1項所述之薄膜太陽能電池模組,其中該電流導出元件係為一銲錫。
- 如申請專利範圍第1項所述之薄膜太陽能電池模組,其中該基板之材質係選自於由鈉玻璃(SLG)、低鐵白玻璃及無鹼玻璃所組成的群組。
- 如申請專利範圍第1項所述之薄膜太陽能電池模組,其中該光吸收層之材料係選自於由非晶矽(a-Si)、多晶矽、微晶矽(microcrystalline silicon,mc-Si)以及微晶矽鍺(microcrysatlline silicon germanium;mc-SiGe)所組成的群組。
- 如申請專利範圍第1項所述之薄膜太陽能電池模組,其中該第一電極層之材質係透明導電氧化物(transparent conducting oxide,TCO)。
- 如申請專利範圍第1項所述之薄膜太陽能電池模組,其中該第二電極層之材質係為透明導電氧薄化物(transparent conducting oxide,TCO)、金屬或金屬與透明導電氧薄化物所組成之複合物。
- 如申請專利範圍第7或8項所述之薄膜太陽能電池模組,其中該透明導電氧化物係選自於由氧化銦錫(ITO)、氧化銦鋅(IZO)、氧化鋁鋅(AZO)、氧化硼鋅(BZO)、氧化鎵鋅(GZO)以及氧化鋅(ZnO)所組成之群組。
- 如申請專利範圍第8項所述之薄膜太陽能電池模組,其中該金屬之材料係選自於由鋁、鎳、金、銀、鉻、鈦以及鈀所組成之群組。
- 一種薄膜太陽能電池模組之製造方法,其步驟包括:(1)提供一基板;(2)於該基板之上形成一第一電極層;(3)於該薄膜太陽能電池模組中預設一電流導出區,並於位在該電流導出區之該第一電極層之上覆蓋一遮罩(mask);(4)於該第一電極層之上形成一光吸收層,並藉由該遮罩使該光吸收層無法形成於位在該電流導出區之該第一電極層之上;(5)於該光吸收層之上形成一第二電極層,而位在該電流導出區之該第二電極層與該第一電極層係直接接觸;以及(6)於該電流導出區設置一電流導出元件,藉以導出該光吸收層產生之電流。
- 如申請專利範圍第11項所述之方法,其中步驟(4)於該第一電極層之上形成該光吸收層之方式係為沉積法或濺鍍法。
- 如申請專利範圍第11項所述之方法,其中該電流導出區係位於該薄膜太陽能電池模組之正極。
- 如申請專利範圍第11項所述之方法,其中該電流導出區係位於該薄膜太陽能電池模組之負極。
- 如申請專利範圍第11項所述之方法,其中該電流導出元件係為一銲錫。
- 如申請專利範圍第11項所述之方法,其中該基板之材質係選自於由鈉玻璃(SLG)、低鐵白玻璃及無鹼玻璃所組成之群組。
- 如申請專利範圍第11項所述之方法,其中該光吸收層之材料係選自於由非晶矽(a-Si)、多晶矽、微晶矽(microcrystalline silicon,mc-Si)以及微晶矽鍺(microcrysatlline silicon germanium;mc-SiGe)所組成之群組。
- 如申請專利範圍第11項所述之方法,其中該第一電極層之材質係一透明導電氧化物(transparent conducting oxide,TCO)。
- 如申請專利範圍第11項所述之方法,其中該第二電極層之材料係為透明導電氧化物(transparent conducting oxide,TCO)、金屬或金屬與透明導電氧化物所組成之複合物。
- 如申請專利範圍第18或19項所述之方法,其中該透明導電氧化物係選自於由氧化銦錫(ITO)、氧化銦鋅(IZO)、氧化鋁鋅(AZO)、氧化硼鋅(BZO)、氧化鎵鋅(GZO)以及氧化鋅(ZnO)所組成之群組。
- 如申請專利範圍第19項所述之方法,其中該金屬之材料係選自於由鋁、鎳、金、銀、鉻、鈦以及鈀所組成之群組。
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