TWI403571B - Phosphor in polycrystalline ceramic structure and a light-emitting element comprising same - Google Patents
Phosphor in polycrystalline ceramic structure and a light-emitting element comprising same Download PDFInfo
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本發明關於在一多晶陶瓷結構中之磷光體、一包括由該磷光體所提供之發光二極體的發光元件、一製造彼之方法以及一調整該磷光體之光擴散及發光特性的方法。The present invention relates to a phosphor in a polycrystalline ceramic structure, a light-emitting element including the light-emitting diode provided by the phosphor, a method of manufacturing the same, and a method of adjusting light diffusing and light-emitting characteristics of the phosphor .
此一於多晶陶瓷結構之磷光體形成一發光陶瓷複合物。The phosphor in the polycrystalline ceramic structure forms a luminescent ceramic composite.
高亮度白光LED(發光二極體)之目前狀態面臨瓶頸。沉積於該LED上之該磷光體層，由於光線之反向散射回LED，導致一光線損失。反向散射之損失一般係20－30%。此外，來自該LED及該磷光體之熱傳導，對於其中接面溫度及磷光體溫度變高而光學元件(磷光體封裝及擷取透鏡)使該LED有效絕緣的高功率應用成為一個問題。一般地，所使用的封裝基質係由聚矽氧及/或環氧樹脂所製成，但這些材料具有極低之熱傳導性，會由於該基質與該等LED材料之折射率不匹配導致較不理想的光外耦合，且係受它們的光熱穩定性之限制。The current state of high-brightness white LEDs (light-emitting diodes) faces bottlenecks. The phosphor layer deposited on the LED causes a loss of light due to backscattering of the light back into the LED. The backscatter loss is typically 20-30%. Further, the heat conduction from the LED and the phosphor becomes a problem for the high-power application in which the optical element (phosphor package and the pickup lens) effectively insulates the LED in which the junction temperature and the phosphor temperature become high. Generally, the encapsulating matrix used is made of polyfluorene oxide and/or epoxy resin, but these materials have extremely low thermal conductivity and may be less due to mismatch in the refractive index of the matrix with the LED materials. Ideal for optical outcoupling and limited by their photothermal stability.
JP 2003－243717說明一安裝於一發光二極體表面之陶瓷基板。該陶瓷基板於一可見光區域中係半透明，且包含若干YAG(釔－鋁－榴石)磷光體。根據此專利公告，當與一其中樹脂為基本材料之傳統實例比較時，可加以抑制長期變化以及發光顏色與發射量之耗散。此專利公告於該等基質材料之特性與對於避免藍LED光線反向散射之基本材料有所需求的特殊情況上係無聲明。JP 2003-243717 describes a ceramic substrate mounted on the surface of a light-emitting diode. The ceramic substrate is translucent in a visible region and comprises a plurality of YAG (yttrium-aluminum-garnet) phosphors. According to this patent publication, when compared with a conventional example in which a resin is a basic material, long-term variation and dissipation of luminescent color and emission amount can be suppressed. This patent publication is not a statement of the nature of the matrix materials and the special circumstances required to avoid the backscattering of the blue LED light.
DE 10349038揭示一主要由一作為該陶瓷基本材料之磷光體(即摻雜Ce之YAG)所形成的材料。一小量之氧化鋁可存在於該基本材料，作為外來晶體。該陶瓷材料及外來晶體之粒度係1至100 μm。所揭示之材料具有許多缺點。僅該等孔洞及該等外來晶體，可促使對於獲得所欲顏色同質性所需之前向散射。然而，此等孔洞及外來晶體亦導致反向散射。YAG：Ce作為基本材料之使用缺點，係其具較低之熱傳導係數以及該材料與其製作過程之高成本。DE 10349038 discloses a material which is mainly formed by a phosphor which is a basic material of the ceramic (i.e., YAG doped with Ce). A small amount of alumina may be present in the base material as a foreign crystal. The ceramic material and the foreign crystal have a particle size of 1 to 100 μm. The disclosed materials have a number of disadvantages. Only such holes and the foreign crystals can promote the forward scatter required to achieve the desired color homogeneity. However, such holes and foreign crystals also cause backscattering. YAG: The disadvantage of using Ce as a basic material is its low heat transfer coefficient and the high cost of the material and its manufacturing process.
本發明之一目的係欲減輕此等問題及缺點，同時獲得一改良之發光元件。已發現上述該等問題可藉由採用一摻雜YAG型之磷光體有效予以解決，其中該磷光體嵌入於一包括形成一陶瓷基質複合物之非冷光多晶氧化鋁的陶瓷基質中，其中陶瓷基質複合物包括80至99.99 vol.%(體積百分比)之氧化鋁及0.01至20 vol.%之磷光體。It is an object of the present invention to alleviate these problems and disadvantages while at the same time obtaining an improved light-emitting element. It has been found that these problems can be effectively solved by using a doped YAG-type phosphor embedded in a ceramic matrix comprising non-cold-light polycrystalline alumina forming a ceramic matrix composite, wherein the ceramic The matrix composite comprises 80 to 99.99 vol.% by volume of alumina and 0.01 to 20 vol.% of phosphor.
於本發明中，術語「磷光體」指一具有若干冷光特性材料之通用意義。In the present invention, the term "phosphor" means a general meaning of a material having a plurality of luminescent properties.
其他LED包括嵌入於一基質中之磷光體係已揭示於EP 1369935中。然而一般而言，此處說明係嵌入於一環氧或聚矽氧主材料中的磷光體粒子，其仍具有該等上述及其他缺點。Other LEDs including phosphorescent systems embedded in a matrix have been disclosed in EP 1369935. In general, however, phosphor particles embedded in an epoxy or polyoxymethylene host material are described herein, which still have these and other disadvantages.
本發明申稱之於多晶陶瓷結構與發光元件(LEE)中的磷光體，包括如一磷光體作為一發光陶瓷複合物，即嵌入一多晶氧化鋁基質中之石榴石磷光體(例如YAG：Ce)的多晶陶瓷複合物，尚未於先前技術中有所說明。The present invention is claimed to be a phosphor in a polycrystalline ceramic structure and a light-emitting element (LEE), including, for example, a phosphor as a luminescent ceramic composite, i.e., a garnet phosphor embedded in a polycrystalline alumina matrix (e.g., YAG: The polycrystalline ceramic composite of Ce) has not been described in the prior art.
該等冷光材料之主要功能係轉變部分的藍光以及傳輸其他部分的藍光以產生所需之白色發光。對於產生適當白色發光之新穎發光陶瓷的典型尺寸與材料組成，係一LED加一具200－1000微米厚度之發光陶瓷基板於其頂上，以及一具有體積百分比大概為例如約15至7 vol.%的Y2 . 9 4 Ce0 . 0 6 Al5 O1 2 向下計數至例如約3至1.4 vol.%的Y2 . 7 Ce0 . 3 Al5 O1 2 範圍之間的磷光體的組合。對於高冷光磷光體轉變之LED，一具有向下計數至50微米壁厚度之薄共形冷光杯狀物，以及一YAG之重量百分比向下計數至12 vol.%之Y2 . 7 Ce0 . 3 Al5 O1 2 產生一適當的白色發光。The primary function of the luminescent materials is to convert portions of the blue light and to transmit other portions of the blue light to produce the desired white luminescence. For a typical size and material composition of a novel luminescent ceramic that produces suitable white luminescence, an LED plus a luminescent ceramic substrate having a thickness of 200-1000 microns is placed on top of it, and a volume percentage is approximately, for example, about 15 to 7 vol.%. Y 2 . 9 4 Ce 0 . 0 6 Al 5 O 1 2 count down to a combination of phosphors, for example, between about 3 and 1.4 vol.% of Y 2 . 7 Ce 0 . 3 Al 5 O 1 2 . For high luminescence phosphor converted LEDs, a thin conformal luminescent cup with a wall count down to 50 microns, and a YAG weight percentage down to 12 vol.% Y 2 . 7 Ce 0 . 3 Al 5 O 1 2 produces a suitable white luminescence.
本發明之新穎的多晶陶瓷複合物，對於若干發生於磷光體轉變之LED的一般光學及光熱問題，提供若干解決方法。以下為本發明之一些缺點，包括關於該等光學特性、該等熱特性以及於先前技術所說明使此等新穎材料遍佈於包括其他基本材料之基質中的處理等之缺點。The novel polycrystalline ceramic composites of the present invention provide several solutions to the general optical and photothermal problems of several phosphor-converting LEDs. The following are some of the shortcomings of the present invention, including the disadvantages associated with such optical characteristics, such thermal characteristics, and the handling of such novel materials throughout the matrix comprising other base materials as described in the prior art.
熱：於發光二極體之功率耗散係一高重要性之因素。一發光二極體之運作係其溫度之函數，且隨該裝置功效下降，裝置中的溫度便上升。由斯托克位移損失產生於該等磷光體中的熱散逸係重要的，因該磷光體效率隨溫度上升而下降。此方面對於高功率與高亮度LED光源，係尤具重要性。Heat: The power dissipation of the light-emitting diode is a factor of high importance. The operation of a light-emitting diode is a function of its temperature, and as the efficiency of the device decreases, the temperature in the device rises. The heat dissipation from the Stoke displacement loss in the phosphors is important because the phosphor efficiency decreases with increasing temperature. This aspect is particularly important for high power and high brightness LED light sources.
純Al2 O3 (氧化鋁)之熱傳導性高於YAG(35 vs.15 W/mK)。因此，本複合物之熱傳導性高於DE 10349038的該等陶瓷材料，其具有YAG作為基本材料。結果，一發光陶瓷複合物以及因此還有獲得具有較佳散熱至周圍之發光元件，導致較低磷光體與二極體溫度，且從而導致該等所發明之複合物於相同功率中具較高光通量，或於較低功率中具相同光通量。The thermal conductivity of pure Al 2 O 3 (alumina) is higher than that of YAG (35 vs. 15 W/mK). Thus, the composites have higher thermal conductivity than the ceramic materials of DE 10349038, which have YAG as the base material. As a result, a luminescent ceramic composite and thus also a light-emitting element having a preferred heat dissipation to the surroundings results in a lower phosphor and diode temperature, and thus the composites of the invention are higher in the same power. Luminous flux, or the same luminous flux at lower power.
光學：於該冷光材料中主控該光散射的重要性係有較佳的瞭解(見範例EP 1369935)。光散射係用以實現來自若干LED與若干陶瓷組合(即LEE)之一均勻角度光譜發射，然而一高度之光散射，因尤其是光線由該LED本身再吸收所致之若干反向散射損失，係有害。吾人已發現，對於先前技術之磷光體層一般習知，該磷光體具有一體積至多為20 vol.%時，該反向散射損失可保持在一遠低於20至30%之降低位準。Optics: A better understanding of the importance of mastering this light scattering in this luminescent material (see example EP 1369935). Light scattering is used to achieve uniform angular spectral emission from one of several LEDs and several ceramic combinations (ie, LEE), whereas a high degree of light scattering, due in particular to the backscattering loss of light by the LED itself, Harmful. It has been found that, for the prior art phosphor layer, it is generally known that when the phosphor has a volume of at most 20 vol.%, the backscatter loss can be maintained at a level well below 20 to 30%.
於一例如環氧或聚矽氧之嵌入系統中的磷光體中的光散射，尤其取決於介於該磷光體材料與該環氧或聚矽氧之間的折射率不匹配。磷光體粒子之量及其尺寸係已選定，遂使得穿透該密實體之路徑長度係夠長使得藍光足以轉變成黃，且夠短使得一足夠量之藍光穿透該嵌入之磷光體層。該產生的光散射不僅向前散射光線，而且還可向後散射光線。該反向散射之光線具有一相當多於該LED中遭再吸收的機會。此降低該效率。於DE 10349038中該環氧係由一透明陶瓷基質所取代。已陳述顏色同質性可藉由導入若干孔洞或導入光散射的第二相而達成。然而，尤其是孔洞將亦導致反向散射，同時因此導致一降低之效率。本發明之一有利方面係於該冷光材料中，藉由將氧化鋁中YAG：Ce之部分主要限制於約20 vol.%，以降低該反向損散射失之可能性。一進一步改良係藉由控制該多孔性與該孔洞尺寸分布而達成。於一項有利的具體實施例中，該陶瓷複合物具有一至多約1%之多孔性。此外，該等孔洞尺寸應維持小，例如小於300 nm，較佳的情況為小於約100 nm。最佳的結果係於具有低於50 nm孔洞尺寸中達成。Light scattering in a phosphor, such as an epoxy or polyoxymethylene embedded system, depends inter alia on a refractive index mismatch between the phosphor material and the epoxy or polyoxymethylene. The amount of phosphor particles and their size have been chosen such that the path length through the dense body is sufficiently long that the blue light is sufficiently converted to yellow and short enough that a sufficient amount of blue light penetrates the embedded phosphor layer. The resulting light scattering not only scatters light forward but also scatters light backwards. The backscattered light has a considerably greater chance of being resorbed in the LED. This reduces this efficiency. The epoxy is replaced by a transparent ceramic matrix in DE 10349038. It has been stated that color homogeneity can be achieved by introducing a number of holes or introducing a second phase of light scattering. However, especially holes will also cause backscattering, which in turn leads to a reduced efficiency. An advantageous aspect of the invention is in the luminescent material by reducing the portion of the YAG:Ce in the alumina to about 20 vol.% to reduce the likelihood of this reverse loss scattering loss. A further improvement is achieved by controlling the porosity and the pore size distribution. In an advantageous embodiment, the ceramic composite has a porosity of from about 1% to about 1%. Moreover, the pore size should be kept small, such as less than 300 nm, and preferably less than about 100 nm. The best results are achieved with pore sizes below 50 nm.
與該YAG部分之限制結合，欲達到反向散射損失相當於5%低係可能的。In combination with the limitations of the YAG portion, it is possible to achieve a backscatter loss equivalent to 5% low.
對於該等磷光體粒子，將氧化鋁作為該基質，在無導致反向散射下，於調整該發光元件之顏色同質性中產生一額外的優點。由於氧化鋁之六角形晶體構造，以及於兩主要方向中折射率之小差異，光線將於晶粒邊界上予以折射，即予以擴散，同時於該反射或反向散射之組件係較該前向擴散能力至少小於一個等級。因此多晶氧化鋁之運用作為該基質材料將進一步提昇該發光陶瓷複合物，以及因此其所提供之發光元件之效率。該等材料之前向散射與表面結構係用以獲得一改良之顏色同質性。由此，已發現於該陶瓷基質中該等晶粒之平均粒度為0.3－50 μm係有利。For these phosphor particles, the use of alumina as the matrix produces an additional advantage in adjusting the color homogeneity of the light-emitting element without causing backscattering. Due to the hexagonal crystal structure of alumina and the small difference in refractive index between the two main directions, the light will be refracted at the grain boundary, ie, diffused, while the component of the reflection or backscatter is compared to the forward direction. The diffusion capacity is at least less than one level. The use of polycrystalline alumina as the matrix material will therefore further enhance the efficiency of the luminescent ceramic composite, and thus the luminescent elements it provides. These materials are used for forward scattering and surface structure to achieve a modified color homogeneity. Thus, it has been found to be advantageous in the ceramic matrix that the average grain size of the grains is from 0.3 to 50 μm.
色點及色溫：一定量之Ce對於一定程度之藍色轉變為必須。YAG：Ce之發射光譜取決於YAG晶格中該Ce之濃度。與其他晶格比較，其中活化劑離子(Ce或Pr)係藉由擴散導入，且於該基質中獲得一均質濃度，本複合物使得於該磷光體粉末(YAG：Ce)局部具有一根據DE 10349038相同總量之Ce之濃度為高的Ce濃度為可能。因此，高濃度之Ce於維持一低整體濃度係為可能。此提供在該色點與色溫最佳化時一額外之自由度。由於較共形磷光體層(一般而言30微米)為厚的薄板可加以應用且較易處置，組合該LED裝置係亦方便。Color point and color temperature: A certain amount of Ce is necessary for a certain degree of blue transition. The emission spectrum of YAG:Ce depends on the concentration of Ce in the YAG lattice. Compared with other crystal lattices, in which activator ions (Ce or Pr) are introduced by diffusion, and a homogeneous concentration is obtained in the matrix, the composite makes the phosphor powder (YAG:Ce) locally have a DE according to DE 10349038 It is possible that the concentration of Ce in the same total amount is high. Therefore, it is possible to maintain a low concentration of Ce at a high concentration. This provides an additional degree of freedom when the color point and color temperature are optimized. Since a thinner plate having a thicker conformal phosphor layer (generally 30 microns) can be applied and is easier to handle, it is also convenient to combine the LED devices.
處理：準備透明的YAG主體係困難，由於YAG係一線狀化合物，且通常一富含鋁或釔之相可發現緊鄰於該意欲之YAG相。然而，氧化鋁之處理係予以完善的控制。氧化鋁亦係較YAG便宜。此外，半透明之氧化鋁可於一較低溫度中予以製造。上述之具有薄膜或共形磷光體層的裝置，因該等磷光體層傾向於脆弱，而難以處置。根據本發明之具體實施例，來自磷光體之波長轉變層係於一氧化鋁基質中形成，以形成發光陶瓷基質複合物。該發光陶瓷基質複合物一般係自該半導體裝置個別形成之自支撐層，其隨後係附接到該完成之半導體裝置或對於該半導體裝置用作為一成長基板。該等陶瓷基質複合層可為半透明或透明，其可減輕該等關於非透明波長轉變層，例如共形層之散射損失。發光陶瓷基質複合層可比薄膜或共形磷光體層堅固耐用。此外，由於發光陶瓷基質複合層係固體，其可較輕易地行光學接觸至額外的光學元件，例如亦係為固體之透鏡以及第二光學元件。Treatment: It is difficult to prepare a transparent YAG main system, since YAG is a linear compound, and usually a phase rich in aluminum or lanthanum can be found next to the intended YAG phase. However, the treatment of alumina is well controlled. Alumina is also cheaper than YAG. In addition, translucent alumina can be produced at a lower temperature. The above described devices having a thin film or conformal phosphor layer tend to be fragile and difficult to handle. In accordance with a particular embodiment of the invention, the wavelength conversion layer from the phosphor is formed in an alumina matrix to form a luminescent ceramic matrix composite. The luminescent ceramic matrix composite is typically a self-supporting layer formed separately from the semiconductor device, which is subsequently attached to the finished semiconductor device or used as a growth substrate for the semiconductor device. The ceramic matrix composite layers can be translucent or transparent, which mitigates scattering losses with respect to non-transparent wavelength converting layers, such as conformal layers. The luminescent ceramic matrix composite layer can be more durable than the film or conformal phosphor layer. Furthermore, since the luminescent ceramic matrix composite layer is solid, it can be easily optically contacted to additional optical components, such as also solid lenses and second optical components.
本發明所使用之磷光體係屬YAG型(釔鋁榴石)。可以形成發光陶瓷基質複合層之磷光體之範例包括YAG磷光體，其具有一般化學式(Lu1-x-y-a-b Yx Gdy )3 (Al1-z Gaz )5 O12 ：Cea Prb ，其中0x1；0y<1；0z0.1；0a0.2；0b0.1；且a+b>0，例如發出於綠-黃範圍中之光的Lu3 Al5 O12 ：Ce3+ 與Y3 Al5 O12 ：Ce3+ 。合適之Y3 Al5 O12 ：Ce3+ 陶瓷材料可購買自Charlotte的Baikowski International Corporation，NC。The phosphorescent system used in the present invention is of the YAG type (yttrium aluminum garnet). Examples of phosphors that can form a luminescent ceramic matrix composite layer include YAG phosphors having the general chemical formula (Lu 1-xyab Y x Gd y ) 3 (Al 1-z Ga z ) 5 O 12 :Ce a Pr b , wherein 0 x 1;0 y<1;0 z 0.1;0 a 0.2;0 b 0.1; and a+b>0, such as Lu 3 Al 5 O 12 :Ce 3+ and Y 3 Al 5 O 12 :Ce 3+ , which emit light in the green-yellow range. Suitable Y 3 Al 5 O 12 :Ce 3+ ceramic materials are available from Baikowski International Corporation, NC of Charlotte.
一發光陶瓷基質複合物可藉由一包括以下步驟的程序形成：形成一氧化鋁及磷光體粉末之研磨液，將該研磨液塑形成一粉末密實體，隨後加以熱處理，可視需要結合熱均壓(HIP)處理成一具有最低反向散射之含磷光體多晶氧化鋁陶瓷鋁複合結構。該陶瓷材料包括80至99.99 vol.%之氧化鋁以及0.01至20 vol.%之磷光體。較佳的情況為該陶瓷材料包括90至99.9 vol.%之氧化鋁以及0.1至10 vol.%之磷光體，且更佳的情況為該陶瓷材料包括95至99 vol.%之氧化鋁以及1至5 vol.%之磷光體。氧化鋁以及磷光體之總和並不需為100 vol.%，若存在著小量之其他金屬、合金、無機化合物，以及之類則可為較低。欲獲得透明的LEE，尤佳的情況係使陶瓷粒子具有介於0.3與50 μm間之平均尺寸，較佳的情況為介於20與40 μm間。A luminescent ceramic matrix composite can be formed by a process comprising the steps of: forming a slurry of alumina and phosphor powder, shaping the slurry into a powder compact, followed by heat treatment, optionally combining heat equalization (HIP) is processed into a phosphor-containing polycrystalline alumina ceramic aluminum composite structure having the lowest backscatter. The ceramic material comprises 80 to 99.99 vol.% alumina and 0.01 to 20 vol.% phosphor. Preferably, the ceramic material comprises 90 to 99.9 vol.% of alumina and 0.1 to 10 vol.% of phosphor, and more preferably the ceramic material comprises 95 to 99 vol.% of alumina and 1 Up to 5 vol.% phosphor. The sum of alumina and phosphor need not be 100 vol.%, and may be lower if there are small amounts of other metals, alloys, inorganic compounds, and the like. In order to obtain a transparent LEE, it is preferred that the ceramic particles have an average size between 0.3 and 50 μm, preferably between 20 and 40 μm.
該程序包括混合氧化鋁及磷光體之粉末，可視需要加上穩定劑與接合劑，以及隨後進行一粉末密實體之塑形。該粉末密實體隨後係予以加熱以移除該等有機接合劑，然後完成該密實體之密集化。該產物具有一高度半透明度以及若干波長轉變特性。不像傳統共形磷光體層或置於一透明樹脂中之磷光體層，該多晶氧化鋁磷光體複合物實質上不含有機材料(低於1%)。The procedure involves mixing a powder of alumina and phosphor, optionally adding a stabilizer and a binder, and subsequently shaping a powder compact. The powder compact is then heated to remove the organic cement and then the densification of the compact is completed. The product has a high degree of translucency and several wavelength transition characteristics. Unlike a conventional conformal phosphor layer or a phosphor layer disposed in a transparent resin, the polycrystalline alumina phosphor composite is substantially free of organic materials (less than 1%).
發光陶瓷基質複合元件可藉由，例如晶圓焊接、燒結、與若干已知有機黏著劑如環氧或聚矽氧之薄層進行膠合、與若干高折射率無機黏合劑進行膠合以及與若干溶膠凝膠玻璃進行膠合而附接至發光裝置。The luminescent ceramic matrix composite component can be bonded by, for example, wafer soldering, sintering, lamination with a number of known organic adhesives such as epoxy or polyoxynitride, bonding with several high refractive index inorganic binders, and with several sols. The gel glass is glued to attach to the light emitting device.
高折射率黏合劑之範例包括高折射率光學玻璃，例如Schott玻璃SF 59、Schott玻璃LaSF 3、Schott玻璃LaSF N18，以及其混合物。該等玻璃可從Pa Duryea的Schott玻璃技術有限公司獲得。其他包括高折射率硫族化合物玻璃之高折射率黏合劑範例，例如(Ge、Sb、Ga)(S、Se)硫族化合物玻璃、包括但不限於GaP、InGaP、GaAs及GaN之第III至V族半導體、包括但不限於ZnS、ZnSe、ZnTe、CdS、CdSe及CdTe之第II至VI族半導體、包括但不限於Si及Ge之第IV族半導體以及化合物、有機半導體、包括但不限於氧化鎢、氧化鈦、氧化鎳、氧化鋯、氧化銦錫及氧化鉻之金屬氧化物、包括但不限於氟化鎂及氟化鈣之金屬氟化物、包括但不限於Zn、In、Mg及Sn之金屬、YAG、磷化物、砷化物、銻化物、氮化物、高折射率有機化合物以及其混合物或合金。與高折射率無機黏合劑進行之膠合係於美國專利申請案於2000年9月12日之第09/660,317號以及申請於2001年6月12日之第09/880,204號中有較詳細之說明，二申請案的揭示內容皆併入本文供作參考。Examples of high refractive index adhesives include high refractive index optical glasses such as Schott glass SF 59, Schott glass LaSF 3, Schott glass LaSF N18, and mixtures thereof. Such glasses are available from Schott Glass Technology, Inc. of Pa Duryea. Other examples of high refractive index binders including high refractive index chalcogenide glasses, such as (Ge, Sb, Ga) (S, Se) chalcogenide glasses, including but not limited to GaP, InGaP, GaAs, and GaN III Group V semiconductors, Group II to VI semiconductors including, but not limited to, ZnS, ZnSe, ZnTe, CdS, CdSe, and CdTe, including but not limited to Group IV semiconductors of Si and Ge, and compounds, organic semiconductors including, but not limited to, oxidation Metal oxides of tungsten, titanium oxide, nickel oxide, zirconium oxide, indium tin oxide, and chromium oxide, including but not limited to metal fluorides of magnesium fluoride and calcium fluoride, including but not limited to Zn, In, Mg, and Sn Metals, YAGs, phosphides, arsenides, tellurides, nitrides, high refractive index organic compounds, and mixtures or alloys thereof. Gluing with high refractive index inorganic binders is described in more detail in U.S. Patent Application Serial No. 09/660,317, filed on Sep. 12, 2000, and Serial No. 09/880,204, filed on Jun. The disclosures of the two applications are incorporated herein by reference.
與若干溶膠凝膠玻璃進行之膠合係於美國專利第6,642,618號中有較詳細之說明，該申請案的揭示內容皆併入本文供作參考。於其中該發光陶瓷基質複合物係藉由一溶膠凝膠玻璃附接於該裝置之具體實施例中，一或多種材料，例如鈦、鈰、鉛、鎵、鉍、鎘、鋅、鋇或鋁之氧化物可包含於該SiO2 溶膠凝膠玻璃中，以增加該玻璃之折射率，為了更密切地符合該玻璃之折射率以及該發光陶瓷基質複合物與該發光裝置之折射率。例如，於氧化鋁陶瓷層中之一Y3 Al5 O1 2 ：Ce3 ＋ 可具有一約1.76之折射率，且可接至一半導體發光裝置之藍寶石成長基板，該藍寶石基板具有一1.76之折射率。令該黏合劑之折射率符合該Y3 Al5 O1 2 ：Ce3 ＋ 陶瓷層與該藍寶石成長基板之折射率係為所欲的。Gluing with a number of sol-gel glasses is described in greater detail in U.S. Patent No. 6,642,618, the disclosure of which is incorporated herein by reference. Wherein the luminescent ceramic matrix composite is attached to the device by a sol-gel glass, one or more materials, such as titanium, tantalum, lead, gallium, antimony, cadmium, zinc, antimony or aluminum. The oxide may be included in the SiO 2 sol-gel glass to increase the refractive index of the glass in order to more closely conform to the refractive index of the glass and the refractive index of the luminescent ceramic matrix composite and the luminescent device. For example, one of the Y 3 Al 5 O 1 2 :Ce 3 + in the alumina ceramic layer may have a refractive index of about 1.76 and may be connected to a sapphire growth substrate of a semiconductor light-emitting device having a 1.76 Refractive index. The refractive index of the binder is such that the refractive index of the Y 3 Al 5 O 1 2 :Ce 3 + ceramic layer and the sapphire growth substrate is desired.
發光陶瓷基質複合元件可包括一單一磷光體或混合在一起之多磷光體。於一些具體實施例中，於陶瓷層中磷光體濃度之大小係為漸變的。該結構允許藉由改變磷光體粒子及陶瓷氧化鋁粒子至少一部份、該陶瓷複合結構之該等粒子的粒度以及於該含磷光體多晶陶瓷複合結構中之多孔性，可簡易地調整該LED之光線擴散特性。The luminescent ceramic matrix composite component can comprise a single phosphor or multiple phosphors mixed together. In some embodiments, the concentration of the phosphor in the ceramic layer is graded. The structure allows the material to be easily adjusted by changing at least a portion of the phosphor particles and the ceramic alumina particles, the particle size of the particles of the ceramic composite structure, and the porosity in the phosphor-containing polycrystalline ceramic composite structure. LED light diffusion characteristics.
於一些具體實施例中，若干裝置可包括多陶瓷元件。In some embodiments, several devices may include multiple ceramic components.
本發光陶瓷基質複合元件之一額外優點係以鑄型、研磨、機械加工、熱壓印或拋光使該等陶瓷元件成為想要的形狀，例如層之能力，用以使光萃取增加。發光陶瓷基質複合元件一般具有高折射率，例如對於一Y3 Al5 O1 2 ：Ce3 ＋ 陶瓷元件為1.75至1.8。為避免在介於該高折射率陶瓷元件與低折射率之空氣間的介面發生全內反射，該陶瓷元件可予以塑形成一透鏡，例如一圓蓋透鏡。來自該裝置之光萃取可藉由對該陶瓷元件之頂部進行隨機或例如塑形為菲涅爾透鏡之紋理化而進一步提昇。於一些具體實施例中，該陶瓷元件之頂部可予以紋理化為一光子晶體結構，例如一形成於該陶瓷材料中的電洞之週期晶格。該塑形後之陶瓷元件可小於或等於一其所附接裝置之面的尺寸，或其可大於該其所附接裝置之面的尺寸。於一些裝置中，較佳的光萃取係預期發生於塑形後之陶瓷元件，其具有一底長至少為該陶瓷元件安裝於其上之裝置面長度的兩倍。於一些具體實施例中，該波長轉變材料係侷限於該陶瓷元件最靠近該裝置之部分。於其他具體實施例中，該波長轉變材料係提供於一第一發光陶瓷基質複合層中，且隨後接於一第二、經塑形、透明陶瓷元件。於其他具體實施例中，該發光元件之顏色同質性係透過該發光陶瓷基質複合物之塑形加以確認。An additional advantage of the present luminescent ceramic matrix composite component is the ability to mold, grind, machine, hot emboss or polish the ceramic component into a desired shape, such as a layer, to increase light extraction. The luminescent ceramic matrix composite component typically has a high refractive index, for example from 1.75 to 1.8 for a Y 3 Al 5 O 1 2 :Ce 3 + ceramic component. To avoid total internal reflection between the interface between the high refractive index ceramic component and the low refractive index air, the ceramic component can be molded into a lens, such as a dome lens. Light extraction from the device can be further enhanced by randomly or for example shaping the top of the ceramic component into a grain of Fresnel lens. In some embodiments, the top of the ceramic component can be textured into a photonic crystal structure, such as a periodic lattice of holes formed in the ceramic material. The shaped ceramic component can be less than or equal to the dimensions of the face of the attachment device, or it can be larger than the face of the attachment to which it is attached. In some devices, a preferred light extraction is contemplated to occur after shaping the ceramic component having a base length that is at least twice the length of the face of the device on which the ceramic component is mounted. In some embodiments, the wavelength converting material is limited to the portion of the ceramic component that is closest to the device. In other embodiments, the wavelength converting material is provided in a first luminescent ceramic matrix composite layer and subsequently attached to a second, shaped, transparent ceramic component. In other embodiments, the color homogeneity of the illuminating element is confirmed by shaping of the luminescent ceramic matrix composite.
於一些具體實施例中，該頂部陶瓷元件之表面係為粗糙化，以增加用以進行該光線混合之散射需求，例如於一裝置中，其中來自該發光裝置及一或多個波長轉變元件之光線會混合以形成白光。於其他具體實施例中，足夠的混合可藉由第二光學元件予以達成，例如一本技術中已知的透鏡或光學波導。In some embodiments, the surface of the top ceramic component is roughened to increase the scattering requirements for the mixing of the light, such as in a device from which the light emitting device and one or more wavelength conversion elements are Light will mix to form white light. In other embodiments, sufficient mixing can be achieved by a second optical component, such as a lens or optical waveguide as is known in the art.
發光陶瓷基質複合元件之一進一步的優點係為該等包括一經塑形供光萃取之透明或發光陶瓷基質複合元件之陶瓷的較佳熱特性。一選擇性的額外透明或發光陶瓷基質複合元件可置於該元件與一裝置間。該裝置可安裝於一例如為一覆晶之子基板上。子基板與主基板，例如可為諸如Cu箔、Mo、Cu/Mo及Cu/W等之金屬；若干半導體，該等半導體具有若干金屬接點，諸如具有歐姆接觸之Si及具有包括例如一或多個Pd、Ge、Ti、Au、Ni、Ag接觸等的歐姆接觸之GaAs；以及諸如壓縮鑽石之陶瓷。若干層可為將該陶瓷元件連接至該子基板之導熱材料，具降低發光陶瓷基質複合元件溫度之可能性，且因此可增加光輸出。用於子基板元件之若干合適材料包括該等上述之子基板材料。A further advantage of one of the luminescent ceramic matrix composite components is the preferred thermal properties of the ceramics comprising a transparent or luminescent ceramic matrix composite component that has been shaped for light extraction. A selective additional transparent or luminescent ceramic matrix composite component can be placed between the component and a device. The device can be mounted on a substrate such as a flip chip. The sub-substrate and the main substrate may be, for example, metals such as Cu foil, Mo, Cu/Mo, and Cu/W; and a plurality of semiconductors having a plurality of metal contacts, such as Si having an ohmic contact and having, for example, one or An ohmic contact GaAs of a plurality of Pd, Ge, Ti, Au, Ni, Ag contacts, etc.; and a ceramic such as a compressed diamond. The plurality of layers may be a thermally conductive material that connects the ceramic component to the submount, with the potential to reduce the temperature of the luminescent ceramic matrix composite component, and thus may increase light output. A number of suitable materials for the submount components include the submount materials described above.
圖2及3闡明包括若干發光陶瓷基質複合層之裝置。於圖2之裝置中，一n型區域42係成長於一合適的成長基板40上，往下接著為一作用區域43及一p型區域44。該成長基板40可為，例如藍寶石、SiC、GaN或任何其他合適的成長基板。n型區域42、作用區域43以及p型區域44之每一個均可包含不同組成、厚度及摻雜物濃度之多層。例如，n型區域42及p型區域44可包括對於歐姆接觸為最佳化之接觸層以及對於包含於作用區域43中之載體為最佳化之包覆層。作用區域43可包括一單一發光層，或可包括由若干阻障層所區隔之多量子井發光層。Figures 2 and 3 illustrate an apparatus comprising a plurality of luminescent ceramic matrix composite layers. In the apparatus of FIG. 2, an n-type region 42 is grown on a suitable growth substrate 40, followed by an active region 43 and a p-type region 44. The growth substrate 40 can be, for example, sapphire, SiC, GaN, or any other suitable growth substrate. Each of the n-type region 42, the active region 43, and the p-type region 44 may comprise multiple layers of different compositions, thicknesses, and dopant concentrations. For example, the n-type region 42 and the p-type region 44 may include a contact layer optimized for ohmic contact and a cladding layer optimized for the carrier included in the active region 43. The active region 43 may comprise a single luminescent layer or may comprise a plurality of quantum well luminescent layers separated by a plurality of barrier layers.
於圖2所闡明之裝置中，p型區域44與作用區域43之一部份係予以蝕刻清除，以露出n型區域42之一部份。一p接點45係形成於p型區域44之剩餘部分上，而一n接點46係形成於n接點46之曝露部分上。於圖2所闡明之具體實施例中，接點45及46係反射型，使得光線係透過基板40之背面萃取自該裝置。此外，該接點45及46可能為透明，或形成的方式使得一大部分之p型區域44與n型區域42之表面不為接點所覆蓋。於此等裝置中，光線可透過該磊晶結構之頂表面萃取自該裝置，即於其上形成接點45及46之表面。In the apparatus illustrated in FIG. 2, a portion of the p-type region 44 and the active region 43 is etched away to expose a portion of the n-type region 42. A p-contact 45 is formed on the remaining portion of the p-type region 44, and an n-contact 46 is formed on the exposed portion of the n-contact 46. In the particular embodiment illustrated in FIG. 2, contacts 45 and 46 are reflective so that light is extracted from the device through the back side of substrate 40. In addition, the contacts 45 and 46 may be transparent or formed such that a portion of the p-type region 44 and the surface of the n-type region 42 are not covered by the contacts. In such devices, light can be extracted from the device through the top surface of the epitaxial structure, i.e., the surfaces of the contacts 45 and 46 are formed thereon.
於圖3中所闡明之裝置中，該等磊晶層係透過p接點45焊接於一主基板49。額外用以促進焊接之若干層(未示出)可包含於p型區域44及主基板49間。在該等磊晶層係焊接至主基板49後，該成長基板可予以移除，以曝露一n型區域42之表面。接至作用區域p側的接點係透過主基板49提供。一n接點46係形成於n型區域42之曝露表面的一部份上。光線係透過n型區域42之頂表面自該裝置予以萃取。成長基板之移除係於美國專利申請案序號：10/804,810，申請於2004年3月19日，標題為[光子晶體發光裝置]中有較詳細之說明，其已授權予本發明之受讓人，且申請案的揭示內容皆併入本文供作參考。In the apparatus illustrated in FIG. 3, the epitaxial layers are soldered to a main substrate 49 through p-contacts 45. Several layers (not shown) additionally used to facilitate soldering may be included between the p-type region 44 and the main substrate 49. After the epitaxial layers are soldered to the main substrate 49, the grown substrate can be removed to expose the surface of an n-type region 42. The contacts connected to the side of the active region p are supplied through the main substrate 49. An n-contact 46 is formed on a portion of the exposed surface of the n-type region 42. Light is extracted from the device through the top surface of the n-type region 42. The removal of the growth substrate is described in U.S. Patent Application Serial No.: 10/804,810, filed on March 19, 2004, the entire disclosure of which is assigned to The disclosure of the application is hereby incorporated by reference.
於圖2及3中所闡明之該等裝置中，一發光陶瓷基質複合層50，例如上述之陶瓷層係附接至光線係從其予以萃取之裝置表面；於圖2中基板40之背面以及於圖3中n型區域42之頂面。該陶瓷層50可形成或附接於光線係從該裝置予以萃取之任何表面上。例如，陶瓷層50可於圖2中所闡明之裝置若干側上延伸。圖3闡明一選擇性濾光器30，其允許來自作用區域43之光進入陶瓷層50，但反射由陶瓷層50所發出之光，使得由陶瓷層50所發出之光係可加以抑制，而無法進入裝置52，類似於其係遭到吸收及損失。合適之若干濾光器範例包括二色濾光器可從列支敦斯登的Unaxis Balzers Ltd.或加州聖塔羅莎的Optical Coating Laboratory,Inc.獲得。In the devices illustrated in Figures 2 and 3, a luminescent ceramic matrix composite layer 50, such as the ceramic layer described above, is attached to the surface of the device from which the light is extracted; in the back of substrate 40 in Figure 2 and In the top surface of the n-type region 42 in FIG. The ceramic layer 50 can be formed or attached to any surface from which the light is extracted from the device. For example, the ceramic layer 50 can extend over several sides of the device illustrated in FIG. 3 illustrates a selective filter 30 that allows light from the active region 43 to enter the ceramic layer 50, but reflects the light emitted by the ceramic layer 50 such that the light system emitted by the ceramic layer 50 can be suppressed. The device 52 cannot be accessed, similar to its absorption and loss. Examples of suitable filters include dichroic filters available from Unaxis Balzers Ltd. of Liechtenstein or Crystal Coating Laboratory, Inc. of Santa Rosa, California.
該發光陶瓷基質複合層50可包括一單一磷光體或混合在一起之多磷光體。於一些具體實施例中，於該陶瓷層中之活化摻雜物的量係漸變的。圖4闡明於一發光陶瓷基質複合層中之漸變摻雜剖面的範例。於圖4中之虛線代表該裝置之表面。最靠近該裝置表面之陶瓷層部分中的磷光體具有最高的摻雜物濃度。離該裝置表面之距離增加的同時，於該磷光體中之摻雜物濃度從而降低。雖然於圖4中係說明一具有一恆定摻雜物濃度之線狀摻雜剖面，應瞭解該漸變的剖面可採取任何形狀，包括例如一階梯狀漸變剖面或一指數剖面，且可包括多或無恆定摻雜物濃度之區域。此外，於一些具體實施例中，將該漸變剖面反向係有利的，如此使得最靠近該裝置表面之區域具有一低摻雜物濃度，該濃度可於離該裝置表面距離增加的同時增加。於一些具體實施例中，離該裝置表面最遠之陶瓷層部分係不允許包含任何磷光體或任何摻雜物，且可予以塑形(如下所示)以供光萃取。The luminescent ceramic matrix composite layer 50 can comprise a single phosphor or multiple phosphors mixed together. In some embodiments, the amount of activated dopant in the ceramic layer is graded. Figure 4 illustrates an example of a graded doping profile in a luminescent ceramic matrix composite layer. The dashed line in Figure 4 represents the surface of the device. The phosphor in the portion of the ceramic layer closest to the surface of the device has the highest dopant concentration. As the distance from the surface of the device increases, the dopant concentration in the phosphor decreases. Although a linear doping profile having a constant dopant concentration is illustrated in FIG. 4, it should be understood that the tapered profile can take any shape including, for example, a stepped gradient profile or an exponential profile, and can include multiple or A region without constant dopant concentration. Moreover, in some embodiments, it is advantageous to reverse the graded profile such that the region closest to the surface of the device has a low dopant concentration that can increase as the distance from the surface of the device increases. In some embodiments, the portion of the ceramic layer that is furthest from the surface of the device is not allowed to contain any phosphor or any dopant and can be shaped (as shown below) for light extraction.
於一些具體實施例中，裝置包括多陶瓷層之，如圖5中所闡明之裝置。陶瓷層50a係附接至可能為例如圖2及3所闡明之任一裝置的裝置52。陶瓷層50b係附接至陶瓷層50a。於一些具體實施例中，該二陶瓷層50a及50b中之一，包含所有運用於該裝置中之波長轉變材料，且該二陶瓷層中之另一係透明，且如果其係鄰近裝置52之陶瓷層則用作為一間隔物層，或者如果其係離裝置52最遠之陶瓷層則用作一光萃取層。於一些具體實施例中，陶瓷層50a及50b其各自皆可包含一不同的磷光體或若干磷光體。雖然於圖5中係闡明二陶瓷層，應瞭解包括多於二陶瓷層及/或多於二磷光體之裝置，皆於本發明之範疇內。於陶瓷層50a及50b中之該等不同磷光體或該等陶瓷層50a及50b自身的配置，可予以選定例如以控制於一裝置中介於多磷光體間之交互作用，如同申請於2004年2月23日之美國專利申請案序號：10/785,616中所說明，同時申請案的揭示內容皆併入本文供作參考。雖然圖5中所示之陶瓷層50a及50b堆疊於裝置52上，其他配置亦可能，且於本發明之範疇內。於一些具體實施例中，一包括一或多個陶瓷層之裝置可與其他波長轉變層結合，例如於圖1中所示之波長轉變材料，或說明於發明背景段落中之薄膜、共形層以及冷光基板。若干非冷光之透明陶瓷層可為，例如彼之主材料作為該發光陶瓷基質複合層，且不具活化摻雜物。In some embodiments, the device comprises a multi-ceramic layer, such as the device illustrated in FIG. The ceramic layer 50a is attached to a device 52 that may be, for example, any of the devices illustrated in Figures 2 and 3. The ceramic layer 50b is attached to the ceramic layer 50a. In some embodiments, one of the two ceramic layers 50a and 50b includes all of the wavelength converting materials used in the device, and the other of the two ceramic layers is transparent, and if it is adjacent to the device 52 The ceramic layer is used as a spacer layer or as a light extraction layer if it is the ceramic layer furthest from the device 52. In some embodiments, each of the ceramic layers 50a and 50b can comprise a different phosphor or phosphors. Although the two ceramic layers are illustrated in Figure 5, it should be understood that devices comprising more than two ceramic layers and/or more than two phosphors are within the scope of the present invention. The arrangement of the different phosphors or the ceramic layers 50a and 50b themselves in the ceramic layers 50a and 50b can be selected, for example, to control the interaction between the multiple phosphors in a device, as applied for in 2004 2 The disclosures of the U.S. Patent Application Serial No. 10/785, filed on Jan. 23, the entire disclosure of which is incorporated herein by reference. Although the ceramic layers 50a and 50b shown in FIG. 5 are stacked on the device 52, other configurations are possible and are within the scope of the present invention. In some embodiments, a device comprising one or more ceramic layers can be combined with other wavelength converting layers, such as the wavelength converting material shown in FIG. 1, or a film, conformal layer as described in the Background of the Invention. And a luminescent substrate. A plurality of non-cold light transparent ceramic layers may be, for example, a host material of the same as the luminescent ceramic matrix composite layer, and have no activated dopants.
發光陶瓷基質複合層之一優點係以鑄型、研磨、機械加工、熱壓印或拋光使該等陶瓷層成為所想要形狀，例如用以使光萃取增加之能力。發光陶瓷基質複合層一般具有高折射率，例如對於一Y3 Al5 O1 2 ：Ce3 ＋ 陶瓷層為1.75至1.8。為避免在介於該高折射率陶瓷層與低折射率之空氣間的介面發生全內反射，該陶瓷層可予以塑形成如圖6及7所闡明。圖6所闡明之裝置中，該發光陶瓷基質複合層54係塑形為一透鏡，例如為一圓蓋透鏡。自該裝置之光萃取可藉由使該陶瓷層之頂部進行隨機或，例如塑形成如圖7所闡明一菲涅爾透鏡之紋理化而進一步提昇。於一些具體實施例中該陶瓷層之頂部可予以紋理化為一光子晶體結構，例如一形成於該陶瓷材料中的電洞之週期晶格。該塑形後之陶瓷元件可小於或等於一其所附接裝置52之面的尺寸，或其可大於其所附接裝置52之面的尺寸，如圖6及7所闡明。於一些裝置中，例如圖7，較佳的光萃取係預期發生於若干塑形後之陶瓷層，其具有一底長至少為於其上安裝有該陶瓷層之裝置52的面長度的兩倍。於一些具體實施例中，該波長轉變材料係侷限於最靠近該裝置52之陶瓷層部分。於其他具體實施例中，如於圖7中所闡明，該波長轉變材料係於一第一陶瓷層50a中提供，且隨後接至一第二、經塑形、透明陶瓷層50b。One of the advantages of the luminescent ceramic matrix composite layer is that the ceramic layer is formed into a desired shape by casting, grinding, machining, hot embossing or polishing, for example, to increase the ability of light extraction. The luminescent ceramic matrix composite layer generally has a high refractive index, for example from 1.75 to 1.8 for a Y 3 Al 5 O 1 2 :Ce 3 + ceramic layer. To avoid total internal reflection between the interface between the high refractive index ceramic layer and the low refractive index air, the ceramic layer can be molded as illustrated in Figures 6 and 7. In the apparatus illustrated in Figure 6, the luminescent ceramic matrix composite layer 54 is shaped as a lens, such as a dome lens. Light extraction from the device can be further enhanced by randomizing the top of the ceramic layer, for example, to form a Fresnel lens as illustrated in Figure 7. In some embodiments, the top of the ceramic layer can be textured into a photonic crystal structure, such as a periodic lattice of holes formed in the ceramic material. The shaped ceramic component can be less than or equal to the dimensions of the face of the attachment means 52, or it can be larger than the face of the attachment means 52 thereof, as illustrated in Figures 6 and 7. In some devices, such as Figure 7, a preferred light extraction system is contemplated to occur in a plurality of shaped ceramic layers having a base length that is at least twice the length of the face of the device 52 on which the ceramic layer is mounted. . In some embodiments, the wavelength converting material is limited to the portion of the ceramic layer that is closest to the device 52. In other embodiments, as illustrated in Figure 7, the wavelength converting material is provided in a first ceramic layer 50a and subsequently joined to a second, shaped, transparent ceramic layer 50b.
於一些具體實施例中，該頂部陶瓷層之表面係為粗糙化，以增加用以進行該光線混合之散射需求，例如於一裝置中，其中來自該發光裝置及一或多個波長轉變層之光線會混合以形成白光。於其他具體實施例中，足夠的混合可藉由第二光學元件予以達成，例如一本技術中已知的透鏡或光學波導。In some embodiments, the surface of the top ceramic layer is roughened to increase the scattering requirements for the light mixing, such as in a device from which the light emitting device and one or more wavelength conversion layers are Light will mix to form white light. In other embodiments, sufficient mixing can be achieved by a second optical component, such as a lens or optical waveguide as is known in the art.
發光陶瓷基質複合層之一進一步優點係為該等較佳的陶瓷熱特性。一包括一發光陶瓷基質複合層及一熱萃取結構之裝置係於圖8中予以闡明。如同於圖7中，圖8說明一經塑形以供光萃取之透明或發光陶瓷基質複合層50b。一可選擇的額外透明或發光陶瓷基質複合層50a係置於層50b及裝置52間。裝置52係安裝於一子基板58上，例如一如圖2所闡明之覆晶。圖3之子基板58及主基板49，例如可為諸如Cu箔、Mo、Cu/Mo及Cu/W等之金屬；若干半導體，該等半導體具有若干金屬接點，諸如具有歐姆接觸之Si及具有包括例如一或多個Pd、Ge、Ti、Au、Ni、Ag的歐姆接觸之GaAs；以及諸如壓縮鑽石之陶瓷。若干層56可為將該陶瓷層50b連接至該子基板58之導熱材料，具降低發光陶瓷基質複合層50a及/或50b溫度之可能性，且因此可增加光輸出。用於層56之若干合適材料包括上述之子基板材料。圖8中所闡明之配置對於從具有例如SiC之導電基板的覆晶裝置進行熱萃取，尤為適用。A further advantage of one of the luminescent ceramic matrix composite layers is the preferred ceramic thermal properties. A device comprising a luminescent ceramic matrix composite layer and a thermal extraction structure is illustrated in FIG. As in Figure 7, Figure 8 illustrates a transparent or luminescent ceramic matrix composite layer 50b that has been shaped for light extraction. An optional additional transparent or luminescent ceramic matrix composite layer 50a is placed between layer 50b and device 52. The device 52 is mounted on a submount 58 such as a flip chip as illustrated in FIG. The sub-substrate 58 and the main substrate 49 of FIG. 3 may be, for example, metals such as Cu foil, Mo, Cu/Mo, and Cu/W; and a plurality of semiconductors having a plurality of metal contacts, such as Si having an ohmic contact and having GaAs comprising, for example, one or more ohmic contacts of Pd, Ge, Ti, Au, Ni, Ag; and ceramics such as compressed diamonds. The plurality of layers 56 can be a thermally conductive material that connects the ceramic layer 50b to the submount 58 with the potential to reduce the temperature of the luminescent ceramic matrix composite layers 50a and/or 50b, and thus can increase light output. Some suitable materials for layer 56 include the sub-substrate materials described above. The configuration illustrated in Figure 8 is particularly useful for thermal extraction from a flip chip device having a conductive substrate such as SiC.
一由細且佳之分散性氧化鋁顆粒(例如Taimei TM－DAR，Sumitomo AKP50)所組成之粉末，係與一YAG：Ce型粉末(例如Philips Lighting)混合，藉由該等氧化鋁顆粒之去黏聚作用(例如濕式球磨或超音波等)以及穩定作用(例如藉由運用HNO3 或聚丙烯酸)分散至水中。該氧化鋁懸浮液係澆注入(例如注漿成型或凝膠注模成型)若干模具中。A powder consisting of fine and well-dispersed alumina particles (e.g., Taimei TM-DAR, Sumitomo AKP50) mixed with a YAG:Ce type powder (e.g., Philips Lighting), degreased by the alumina particles Aggregation (such as wet ball milling or ultrasonic, etc.) and stabilizing (for example by using HNO 3 or polyacrylic acid) are dispersed into the water. The alumina suspension is poured into several molds, such as injection molding or gel injection molding.
於進行乾燥與脫模後，該多孔氧化鋁產物係於氧中予以鈣化，以於一實質上低於該燒結溫度之溫度中，去除所有不欲的成分(例如穩定劑及接合劑)。隨後，該材料係於一合適的燒結環境(例如真空下或氧氣環境下)中予以燒結，直到該密度係高於95%。於該燒結處理後，施以熱均壓(HIP)，以於無需一較高燒結溫度下進一步增加該密度。該產物為高度半透明，且僅產生有限的反向散射。After drying and demolding, the porous alumina product is calcified in oxygen to remove all undesirable components (e.g., stabilizers and binders) at a temperature substantially below the sintering temperature. Subsequently, the material is sintered in a suitable sintering environment (e.g., under vacuum or in an oxygen atmosphere) until the density is above 95%. After the sintering treatment, a heat equalization (HIP) is applied to further increase the density without a higher sintering temperature. This product is highly translucent and produces only limited backscattering.
10‧‧‧LED10‧‧‧LED
12‧‧‧發光晶片12‧‧‧Lighting chip
14‧‧‧基座14‧‧‧ pedestal
16‧‧‧LED晶粒16‧‧‧LED dies
18‧‧‧電流連接頭18‧‧‧current connector
20‧‧‧透明樹脂20‧‧‧Transparent resin
22‧‧‧磷光體顆粒22‧‧‧phosphor particles
24‧‧‧透鏡24‧‧‧ lens
26‧‧‧LED放射光26‧‧‧LED radiation
30‧‧‧濾光器30‧‧‧ Filter
40‧‧‧成長基板40‧‧‧ Growth substrate
42‧‧‧n型區域42‧‧‧n type area
43‧‧‧作用區域43‧‧‧Action area
44‧‧‧p型區域44‧‧‧p-type area
45‧‧‧p接點45‧‧‧p junction
46‧‧‧n接點46‧‧‧n contacts
49‧‧‧主基板49‧‧‧Main substrate
50‧‧‧發光陶瓷基質複合層50‧‧‧Lighting ceramic matrix composite layer
50a及50b‧‧‧陶瓷層50a and 50b‧‧‧ ceramic layers
52‧‧‧裝置52‧‧‧ device
54‧‧‧發光陶瓷基質複合層54‧‧‧Lighting ceramic matrix composite layer
56‧‧‧層56‧‧ ‧
58‧‧‧子基板58‧‧‧Sub Substrate
本發明藉由下列若干非限制範例及圖式進一步加以闡明。The invention is further illustrated by the following non-limiting examples and drawings.
圖1闡明一先前技術磷光體轉變之半導體發光裝置。Figure 1 illustrates a prior art phosphor converted semiconductor light emitting device.
圖2闡明一包括一多晶氧化鋁磷光體複合層，即一發光陶瓷基質複合物之覆晶半導體發光裝置。Figure 2 illustrates a flip chip semiconductor light emitting device comprising a polycrystalline alumina phosphor composite layer, i.e., a luminescent ceramic matrix composite.
圖3闡明一包括一焊接之主基板與一發光陶瓷基質複合物的半導體發光裝置。Figure 3 illustrates a semiconductor light emitting device comprising a soldered main substrate and a luminescent ceramic matrix composite.
圖4闡明一於一發光陶瓷基質複合層中之磷光體摻雜剖面的一範例。Figure 4 illustrates an example of a phosphor doping profile in a luminescent ceramic matrix composite layer.
圖5闡明一包括多陶瓷層之半導體發光裝置。Figure 5 illustrates a semiconductor light emitting device comprising a plurality of ceramic layers.
圖6闡明一包括一經塑形之發光陶瓷基質複合層的半導體發光裝置。Figure 6 illustrates a semiconductor light emitting device comprising a shaped luminescent ceramic matrix composite layer.
圖7闡明一半導體發光裝置，其包括的一陶瓷磷光體層寬於該裝置中之磊晶層。Figure 7 illustrates a semiconductor light emitting device that includes a ceramic phosphor layer that is wider than the epitaxial layer in the device.
圖8闡明一包括一陶瓷磷光體層與一熱萃取結構之半導體發光裝置。Figure 8 illustrates a semiconductor light emitting device comprising a ceramic phosphor layer and a thermal extraction structure.
40．．．成長基板40. . . Growth substrate
42．．．n型區域42. . . N-type region
43．．．作用區域43. . . Action area
44．．．p型區域44. . . P-type region
45．．．p接點45. . . p contact
46．．．n接點46. . . n contact
50．．．發光陶瓷基質複合層50. . . Luminescent ceramic matrix composite layer
52．．．裝置52. . . Device
Claims (24)
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| EP05101942 | 2005-03-14 |
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| CN108610023B (en) * | 2016-12-09 | 2021-07-23 | 深圳光峰科技股份有限公司 | Preparation method of ceramic composite material, ceramic composite material and wavelength converter |
| JP2018141035A (en) * | 2017-02-27 | 2018-09-13 | 日本特殊陶業株式会社 | Wavelength conversion member and light-emitting device |
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| EP3662517B1 (en) * | 2017-08-03 | 2021-03-24 | Lumileds LLC | Light emitting device and method of manufacturing thereof |
| JP6853140B2 (en) * | 2017-08-09 | 2021-03-31 | 日本特殊陶業株式会社 | Wavelength conversion member and light emitting device |
| CN109467453B (en) * | 2017-09-07 | 2021-12-07 | 中国科学院上海硅酸盐研究所 | Fluorescent ceramic with characteristic microstructure and preparation method and application thereof |
| CN109896851B (en) * | 2017-12-07 | 2023-02-10 | 上海航空电器有限公司 | Ceramic composite with concentration gradient, preparation method and light source device |
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| CN101142857A (en) | 2008-03-12 |
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