TWI401786B - Package structure - Google Patents

Package structure Download PDF

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Publication number
TWI401786B
TWI401786B TW98138276A TW98138276A TWI401786B TW I401786 B TWI401786 B TW I401786B TW 98138276 A TW98138276 A TW 98138276A TW 98138276 A TW98138276 A TW 98138276A TW I401786 B TWI401786 B TW I401786B
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Taiwan
Prior art keywords
light
package structure
disposed
emitting diodes
control chip
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TW98138276A
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Chinese (zh)
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TW201117352A (en
Inventor
Kuo Tso Chen
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Optromax Electronics Co Ltd
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Priority to TW98138276A priority Critical patent/TWI401786B/en
Publication of TW201117352A publication Critical patent/TW201117352A/en
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Publication of TWI401786B publication Critical patent/TWI401786B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

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  • Led Device Packages (AREA)

Description

封裝結構Package structure

本發明是有關於一種半導體結構，且特別是有關於一種封裝結構。This invention relates to a semiconductor structure, and more particularly to a package structure.

發光二極體具有諸如壽命長、體積小、高抗震性、低熱產生及低功率消耗等優點，因此已被廣泛應用於家用及各種設備中的指示器或光源。近年來，發光二極體已朝多色彩及高亮度發展，因此其應用領域已擴展至大型戶外看板、交通號誌燈及相關領域。在未來，發光二極體甚至可能成為兼具省電及環保功能的主要照明光源。The light-emitting diode has advantages such as long life, small volume, high shock resistance, low heat generation, and low power consumption, and thus has been widely used as an indicator or a light source in households and various devices. In recent years, light-emitting diodes have developed toward multiple colors and high brightness, so their application fields have expanded to large outdoor billboards, traffic lights and related fields. In the future, light-emitting diodes may even become the main source of illumination for both power saving and environmental protection functions.

習知之複數個發光二極體的封裝可大致分為兩種類型：打線封裝型以及覆晶封裝型兩種，其中以打線方式所形成的封裝體其成本較低，而以覆晶方式所形成的封裝體則具有較好的散熱效果。一般來說，複數個發光二極體的封裝是將多數個發光二極體晶片配置於電路板上進行封裝，其中電路板上可選擇性配置控制晶片。當電路板上配置有控制晶片時，控制晶片會與發光二極體晶片分離封裝；當電路板上無配置控制晶片時，則可利用外接控制晶片的方式來控制電路板上的發光二極體晶片。換言之，發光二極體晶片與控制晶片是分別進行封裝製程，因此封裝的次數無法減少，易增加製程步驟與生產成本，且不適於量產。The package of a plurality of light-emitting diodes can be roughly divided into two types: a wire-bonding type and a flip-chip type, wherein a package formed by wire bonding has a low cost and is formed by a flip chip method. The package has a better heat dissipation effect. Generally, a plurality of LED packages are packaged by disposing a plurality of LED chips on a circuit board, wherein the control chip is selectively disposed on the circuit board. When the control chip is disposed on the circuit board, the control chip is separated from the LED chip; when no control chip is disposed on the circuit board, the external control chip can be used to control the LED on the circuit board. Wafer. In other words, the LED chip and the control wafer are separately packaged, so the number of packages cannot be reduced, the process steps and production costs are easily increased, and mass production is not suitable.

此外，將發光二極體晶片以覆晶的方式配置於電路板上時，電路板上必須有大面積且對應發光二極體晶片的覆晶接點。尤其，為了維持覆晶後的發光二極體晶片的平穩度，發光二極體晶片會具有三個以上的覆晶接點。此點不利於小尺寸之發光二極體晶片的封裝，且由於發光二極體晶片是採用單面出光，而電路板用以覆晶的表面通常會作反射處裡，因此當發光二極體透過導電凸塊與電路板上的覆晶接點電性連接時，其所發出的部分光線必須經過多次反射與折射，並多次通過發光二極體之P-N接面(junction)，才能射出。如此一來，光路徑較長，且光損失也較高。換言之，電路板上之大面積的覆晶接點會影響發光二極體的發光效率。In addition, when the light-emitting diode wafer is placed on the circuit board in a flip chip manner, the circuit board must have a large area and a flip chip contact corresponding to the light-emitting diode wafer. In particular, in order to maintain the smoothness of the flip-chip light-emitting diode wafer, the light-emitting diode wafer has three or more flip-chip contacts. This is not conducive to the packaging of small-sized LED chips, and since the LED chip is light-emitting on one side, the surface of the circuit board used for flip-chip is usually reflected, so when the LED is used When the conductive bumps are electrically connected to the flip-chip contacts on the circuit board, part of the light emitted by the conductive bumps must be reflected and refracted multiple times, and passed through the PN junction of the LEDs multiple times to be emitted. . As a result, the light path is longer and the light loss is higher. In other words, a large area of the flip chip contact on the board affects the luminous efficiency of the LED.

此外，覆晶封裝所用的基板或導電凸塊亦可能因製程公差的影響而產生高低不平或大小不一的情形。也就是說，當發光二極體晶片配置於電路板上時，發光二極體晶片的發光面會因為覆晶封裝所使用的基板高低不一或連接於發光二極體晶片與電路板之間的導電凸塊大小不一而產生高度差，意即發光二極體的發光面並非位於同一平面上。如此一來，亦會導致封裝量率損失以及發光二極體晶片所發出之光線的混光均勻度不佳，進而影響發光二極體之多晶片封裝的出光效果。另外，一般封裝膠體的散熱效果較差且其折射率無法與發光二極體相匹配，導致封裝後之發光二極體的散熱效果與出光效率低落。In addition, the substrate or conductive bumps used in the flip chip package may also have unevenness or different sizes due to process tolerances. In other words, when the LED chip is disposed on the circuit board, the light emitting surface of the LED chip may be different between the substrate used in the flip chip package or connected between the LED chip and the circuit board. The size of the conductive bumps is different, resulting in a height difference, meaning that the light emitting surfaces of the light emitting diodes are not on the same plane. As a result, the loss of package rate and the uniformity of light mixing of the light emitted by the LED chip are not good, thereby affecting the light-emitting effect of the multi-chip package of the light-emitting diode. In addition, the general package encapsulation has a poor heat dissipation effect and its refractive index cannot be matched with the LED, resulting in a low heat dissipation effect and a low light extraction efficiency of the packaged LED.

本發明提供一種封裝結構，其複數個發光二極體以出光側面向透光基板而配置於透光基板的承載表面上。意即，可使複數個發光二極體可平整地排列於透光基板上。如此一來，發光二極體所發出的光線可從同一平面穿透透光基板，具有較佳的出光效果。The present invention provides a package structure in which a plurality of light-emitting diodes are disposed on a bearing surface of a light-transmitting substrate with a light-emitting side surface facing the light-transmitting substrate. That is, a plurality of light emitting diodes can be arranged flat on the light transmissive substrate. In this way, the light emitted by the LED can penetrate the transparent substrate from the same plane, and has a better light-emitting effect.

本發明提供一種封裝結構，其控制晶片以覆晶方式配置於已平整地排列於透光基板上的發光二極體上，適用於多晶粒之小尺寸之發光二極體的封裝，並有利於量產以及降低製作成本。The invention provides a package structure, wherein the control wafer is arranged on the light-emitting diode which is evenly arranged on the light-transmitting substrate in a flip chip manner, and is suitable for packaging of a small-sized light-emitting diode of a plurality of crystal grains, and is advantageous. For mass production and lower production costs.

本發明提供一種封裝結構，其控制晶片直接與發光二極體一起封裝，可有效縮小整體封裝結構體積與降低生產成本。The invention provides a package structure, which controls the wafer to be directly packaged together with the light emitting diode, which can effectively reduce the overall package structure volume and reduce the production cost.

本發明提供一種封裝結構，其透光基板具有與發光二極體相匹配的折射率，有助於增加整體的出光效率。同時，此透光基板亦可對發光二極體提供良好的的散熱效果。The invention provides a package structure, wherein the light-transmitting substrate has a refractive index matched with the light-emitting diode, which helps to increase the overall light-emitting efficiency. At the same time, the transparent substrate can also provide a good heat dissipation effect on the light emitting diode.

本發明提出一種封裝結構，其包括一透光基板、多個發光二極體以及至少一控制晶片。透光基板具有一承載表面。每一發光二極體具有相對的一出光側與一接合側，且每一發光二極體以出光側面向透光基板而配置於承載表面上。控制晶片配置於發光二極體的接合側，且控制晶片與發光二極體電性連接。The invention provides a package structure comprising a light transmissive substrate, a plurality of light emitting diodes and at least one control wafer. The light transmissive substrate has a bearing surface. Each of the light-emitting diodes has a light-emitting side and a joint side, and each of the light-emitting diodes is disposed on the bearing surface with the light-emitting side toward the light-transmitting substrate. The control wafer is disposed on the bonding side of the light emitting diode, and the control wafer is electrically connected to the light emitting diode.

在本發明之一實施例中，上述之封裝結構更包括至少一外接元件，配置於透光基板的承載表面或控制晶片上，其中控制晶片透過外接元件與一外部電路電性連接。In an embodiment of the invention, the package structure further includes at least one external component disposed on the carrying surface of the transparent substrate or the control wafer, wherein the control chip is electrically connected to an external circuit through the external component.

在本發明之一實施例中，上述之外接元件透過覆晶接合方式、打線接合方式、焊接方式或導電膠與控制晶片電性連接。In an embodiment of the invention, the external component is electrically connected to the control wafer through a flip chip bonding method, a wire bonding method, a soldering method, or a conductive paste.

在本發明之一實施例中，上述之外接元件包括一導線架、一金屬塊或一印刷電路板。In an embodiment of the invention, the external component comprises a lead frame, a metal block or a printed circuit board.

在本發明之一實施例中，上述之外接元件配置於透光基板的承載表面上，且外接元件與發光二極體實質上具有相同的高度。In an embodiment of the invention, the external component is disposed on the bearing surface of the light-transmitting substrate, and the external component has substantially the same height as the light-emitting diode.

在本發明之一實施例中，上述之至少一控制晶片包括一第一控制晶片以及一第二控制晶片，每一發光二極體具有一第一引腳與一第二引腳，且第一控制晶片以及第二控制晶片各別連接到同一個發光二極體的第一引腳以及第二引腳。In one embodiment of the present invention, the at least one control chip includes a first control chip and a second control chip, each of the light emitting diodes has a first pin and a second pin, and the first The control chip and the second control chip are each connected to the first pin and the second pin of the same LED.

在本發明之一實施例中，上述之封裝結構更包括至少一橋接元件，配置於透光基板的承載表面或控制晶片上，至少一控制晶片包括一第一控制晶片以及一第二控制晶片，而橋接元件電性連接第一控制晶片與第二控制晶片。In one embodiment of the present invention, the package structure further includes at least one bridging element disposed on the carrying surface of the transparent substrate or the control wafer, and the at least one control wafer includes a first control wafer and a second control wafer. The bridging element is electrically connected to the first control wafer and the second control wafer.

在本發明之一實施例中，上述之橋接元件透過覆晶接合方式、打線接合方式、焊接方式或導電膠來電性連接第一控制晶片與第二控制晶片。In an embodiment of the invention, the bridging element electrically connects the first control wafer and the second control wafer by a flip chip bonding method, a wire bonding method, a soldering method or a conductive adhesive.

在本發明之一實施例中，上述之封裝結構更包括一光調整物質，配置於透光基板的表面或內部。In an embodiment of the invention, the package structure further includes a light adjusting substance disposed on a surface or an interior of the light transmissive substrate.

在本發明之一實施例中，上述之光調整物質包括螢光物質、散射物質或反射物質。In an embodiment of the invention, the light-adjusting substance comprises a fluorescent substance, a scattering substance or a reflective substance.

在本發明之一實施例中，上述之光調整物質為一連續之光調整物質層或多個光調整物質圖案。In an embodiment of the invention, the light adjusting substance is a continuous light adjusting substance layer or a plurality of light adjusting substance patterns.

在本發明之一實施例中，上述之光調整物質圖案與發光二極體對應設置。In an embodiment of the invention, the light-adjusting substance pattern is disposed corresponding to the light-emitting diode.

在本發明之一實施例中，上述之透光基板為多層板結構，且光調整物質位於每一層板結構的表面或內部。In an embodiment of the invention, the light-transmitting substrate is a multi-layered board structure, and the light-adjusting substance is located on the surface or inside of each layer of the board structure.

在本發明之一實施例中，上述之封裝結構更包括多個導電元件，配置於每一發光二極體的接合側與控制晶片之間，且控制晶片透過導電元件電性連接至所對應的發光二極體。In an embodiment of the invention, the package structure further includes a plurality of conductive elements disposed between the bonding side of each of the light emitting diodes and the control wafer, and the control wafer is electrically connected to the corresponding through the conductive elements. Light-emitting diode.

在本發明之一實施例中，上述之每一發光二極體的接合側具有一第一接合部以及一第二接合部，導電元件包括多個第一導電元件與多個第二導電元件，第一導電元件分別配置於每一發光二極體的第一接合部，第二導電元件分別配置於每一發光二極體的第二接合部，第一接合部與第二接合部具有一高度差，且高度差為h1，每一第一導電元件的高度為h2，每一第二導電元件的高度為h3，且h1+h2=h3。In an embodiment of the present invention, the bonding side of each of the light emitting diodes has a first bonding portion and a second bonding portion, and the conductive component includes a plurality of first conductive components and a plurality of second conductive components. The first conductive elements are respectively disposed on the first joint portion of each of the light emitting diodes, and the second conductive elements are respectively disposed on the second joint portion of each of the light emitting diodes, and the first joint portion and the second joint portion have a height Poor, and the height difference is h1, the height of each first conductive element is h2, the height of each second conductive element is h3, and h1+h2=h3.

在本發明之一實施例中，上述之每一第一導電元件或每一第二導電元件係由一個導電凸塊所構成或由多個導電凸塊堆疊而成。In an embodiment of the invention, each of the first conductive elements or each of the second conductive elements is formed by one conductive bump or stacked by a plurality of conductive bumps.

在本發明之一實施例中，上述之封裝結構更包括一封裝膠體，配置於透光基板的承載表面上，且至少包覆發光二極體。In an embodiment of the invention, the package structure further includes an encapsulant disposed on the bearing surface of the transparent substrate and covering at least the LED.

在本發明之一實施例中，上述之封裝結構更包括一散熱元件，配置於控制晶片相對遠離透光基板的一側。In an embodiment of the invention, the package structure further includes a heat dissipating component disposed on a side of the control wafer that is relatively far from the light transmissive substrate.

在本發明之一實施例中，上述之封裝結構更包括一透光膠層，配置於每一發光二極體的出光側與透光基板的承載表面之間。In one embodiment of the present invention, the package structure further includes a light transmissive adhesive layer disposed between the light exiting side of each of the light emitting diodes and the bearing surface of the light transmissive substrate.

在本發明之一實施例中，上述之封裝結構更包括一光路徑調整結構，配置於透光基板之一相對於承載表面的底面上。In an embodiment of the invention, the package structure further includes an optical path adjusting structure disposed on a bottom surface of one of the transparent substrates relative to the bearing surface.

在本發明之一實施例中，上述之光路徑調整結構包括多個透鏡或多個表面微結構。In an embodiment of the invention, the optical path adjustment structure described above includes a plurality of lenses or a plurality of surface microstructures.

在本發明之一實施例中，上述之光路徑調整結構與透光基板為一體成型。In an embodiment of the invention, the light path adjusting structure is integrally formed with the light transmissive substrate.

基於上述，本發明之發光二極體以出光側面向透光基板而配置於透光基板的承載表面上，且控制晶片以覆晶方式配置於已平整地排列於透光基板上的發光二極體上。因此，本發明適用於小尺寸之發光二極體的封裝，並有利於量產以及降低製作成本。此外，由於本發明之控制晶片可直接與發光二極體一起封裝，因此可有效縮小整體封裝結構的體積與降低生產成本。另外，本發明之透光基板可具有與發光二極體相匹配的折射率，有助於增加整體封裝結構的出光效率。同時，此透光基板亦可對發光二極體提供良好的的散熱效果。Based on the above, the light-emitting diode of the present invention is disposed on the bearing surface of the light-transmitting substrate with the light-emitting side surface facing the light-transmitting substrate, and the control wafer is placed on the light-emitting diode that is evenly arranged on the light-transmitting substrate in a flip chip manner. Physically. Therefore, the present invention is suitable for packaging of a small-sized light-emitting diode, and is advantageous for mass production and reduction of manufacturing cost. In addition, since the control wafer of the present invention can be directly packaged together with the light emitting diode, the volume of the overall package structure can be effectively reduced and the production cost can be reduced. In addition, the light-transmitting substrate of the present invention may have a refractive index matched with the light-emitting diode, which helps to increase the light-emitting efficiency of the overall package structure. At the same time, the transparent substrate can also provide a good heat dissipation effect on the light emitting diode.

為讓本發明之上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。The above described features and advantages of the present invention will be more apparent from the following description.

圖1為本發明之一實施例之一種封裝結構的剖面示意圖。請參考圖1，在本實施例中，封裝結構100a包括一透光基板110a、多個發光二極體120a～120e以及至少一控制晶片130。透光基板110a具有一承載表面112，其中透光基板110a例如是一玻璃基板、一陶瓷基板、或一透明塑膠基板。每一發光二極體120a(或發光二極體120b、120c、120d、120e)具有一出光側122a(或出光側122b、122c、122d、122e)與一相對於出光側122a(或出光側122b、122c、122d、122e)的接合側124a(或接合側124b、124c、124d、124e)，且每一發光二極體120a(或發光二極體120b、120c、120d、120e)是以出光側122a(或出光側122b、122c、122d、122e)面向透光基板110a而配置於透光基板110a的承載表面112上。控制晶片130配置於發光二極體120a～120e的接合側124a～124e上，且控制晶片130與發光二極體120a～120e電性連接。1 is a cross-sectional view showing a package structure according to an embodiment of the present invention. Referring to FIG. 1 , in the embodiment, the package structure 100 a includes a transparent substrate 110 a , a plurality of light emitting diodes 120 a 120 120 , and at least one control wafer 130 . The transparent substrate 110a has a bearing surface 112. The transparent substrate 110a is, for example, a glass substrate, a ceramic substrate, or a transparent plastic substrate. Each of the light-emitting diodes 120a (or the light-emitting diodes 120b, 120c, 120d, and 120e) has a light-emitting side 122a (or light-emitting sides 122b, 122c, 122d, and 122e) and a light-emitting side 122a (or a light-emitting side 122b). , the bonding side 124a (or the bonding sides 124b, 124c, 124d, 124e) of the 122c, 122d, 122e), and each of the light emitting diodes 120a (or the light emitting diodes 120b, 120c, 120d, 120e) is the light emitting side The 122a (or the light-emitting sides 122b, 122c, 122d, and 122e) are disposed on the carrying surface 112 of the light-transmitting substrate 110a facing the light-transmitting substrate 110a. The control wafer 130 is disposed on the bonding sides 124a to 124e of the LEDs 120a to 120e, and the control wafer 130 is electrically connected to the LEDs 120a to 120e.

具體而言，本實施例之控制晶片130包括一第一控制晶片132以及一第二控制晶片134，其中第一控制晶片132透過多個導電元件170與發光二極體120a～120c電性連接，而第二控制晶片134亦透過導電元件170與發光二極體120d～120e電性連接。此處之導電元件170可以是導電凸塊。於其他未繪示的實施例中，導電元件170亦可以是導電膠，且控制晶片130的數量亦可僅為一個或三個以上，在此並不予以限定。Specifically, the control chip 130 of the present embodiment includes a first control chip 132 and a second control chip 134. The first control chip 132 is electrically connected to the LEDs 120a-120c through a plurality of conductive elements 170. The second control chip 134 is also electrically connected to the LEDs 120d to 120e through the conductive element 170. Conductive element 170 herein can be a conductive bump. In other embodiments, the conductive element 170 may also be a conductive paste, and the number of the control wafers 130 may be only one or three or more, which is not limited herein.

由於發光二極體120a～120e是以出光側122a～122e面向透光基板110a而配置於承載表面112上，因此當第一控制晶片132以及第二控制晶片134分別驅動發光二極體120a～120c及發光二極體120d～120e時，發光二極體120a～120e所發出的光線可從同一平面穿透透光基板110a而傳遞至外界，可使發光二極體120a~120e的出光率一致，並可提升整體發光二極體120a～120e之光線的混光效果，意即混光均勻度較佳。換言之，本實施例之封裝結構100a具有較佳的出光效果。此外，控制晶片130是以覆晶方式配置於已平整地排列於透光基板100a上的發光二極體120a～120e上。如此一來，單次覆晶製造流程所完成之發光二極體120a～120e覆晶封裝的個數可增加，可有效降低成本且適於量產。同時，由於本實施例所採用的覆晶方式與現有之晶片的覆晶結構相類似，因此可以使用現有的覆晶製程以及製程設備，可提高封裝結構100a的量產性與產品的良率。另外，由於控制晶片130是直接與發光二極體120a～120e一起封裝，因此可有效縮小整體封裝結構100a的體積與降低生產成本。Since the light emitting diodes 120a to 120e are disposed on the carrying surface 112 such that the light emitting sides 122a to 122e face the light transmitting substrate 110a, the first control wafer 132 and the second control wafer 134 drive the light emitting diodes 120a to 120c, respectively. When the light-emitting diodes 120a to 120e are emitted, the light emitted from the light-emitting diodes 120a to 120e can be transmitted from the same plane to the transparent substrate 110a and transmitted to the outside, so that the light-emitting diodes 120a to 120e can have the same light-emitting rate. The light mixing effect of the light of the whole light-emitting diodes 120a-120e can be improved, that is, the uniformity of the light mixing is better. In other words, the package structure 100a of the present embodiment has a better light-emitting effect. Further, the control wafer 130 is placed on the light-emitting diodes 120a to 120e which are flatly arranged on the light-transmitting substrate 100a in a flip chip manner. In this way, the number of flip-chip packages of the LEDs 120a-120e completed by the single flip chip manufacturing process can be increased, which can effectively reduce the cost and is suitable for mass production. At the same time, since the flip chip method used in the embodiment is similar to the flip chip structure of the conventional wafer, the existing flip chip process and the process equipment can be used, and the mass production of the package structure 100a and the yield of the product can be improved. In addition, since the control wafer 130 is directly packaged together with the light emitting diodes 120a to 120e, the volume of the entire package structure 100a can be effectively reduced and the production cost can be reduced.

值得一提的是，本實施例之透光基板110a可選擇與發光二極體120a～120e相匹配的折射率，如此一來，可有效增加封裝結構100a整體的光出效率。同時，此透光基板110a亦可作為發光二極體120a～120e的散熱板，意即發光二極體120a～120e可透過透明基版110a而將熱傳遞至外界，可有效降低整體封裝結構100a的溫度，以使封裝結構100a具有較佳的可靠度。此外，一般來說，控制晶片130的材質通常為矽基材，其中矽基材為良好的導熱體，因此控制晶片130亦可有助於提升整體封裝結構100a的散熱效率。It is to be noted that the light-transmitting substrate 110a of the present embodiment can select a refractive index matching the light-emitting diodes 120a-120e, so that the light-emitting efficiency of the package structure 100a as a whole can be effectively increased. At the same time, the transparent substrate 110a can also serve as a heat dissipation plate of the LEDs 120a-120e, that is, the LEDs 120a-120e can transmit heat to the outside through the transparent substrate 110a, thereby effectively reducing the overall package structure 100a. The temperature is such that the package structure 100a has better reliability. In addition, in general, the material of the control wafer 130 is generally a germanium substrate, wherein the germanium substrate is a good heat conductor, so the control wafer 130 can also help to improve the heat dissipation efficiency of the overall package structure 100a.

本實施例之封裝結構100a可更包括二外接元件140a、140b，其中外接元件140a、140b例如一金屬塊。詳細而言，外接元件140a配置於透光基板110a的承載表面112上，且外接元件140a與發光二極體120a～120e實質上具有相同的高度，而外接元件140b配置於第一控制晶片132相對遠離透光基板110a的一側表面上，且第一控制晶片132可透過外接元件140a、140b與外部電路(未繪示)電性連接，可增加封裝結構100a的應用性。外接元件140a可藉由導電元件170(例如是導電凸塊)而以覆晶接合的方式與第一控制晶片132電性連接，而外接元件140b可藉由導電膠172與第一控制晶片132電性連接。當然，於其他未繪示的實施例中，外接元件140a、140b亦可透過打線接合方式、焊接方式或其他適當的方式與第一控制晶片132電性連接，在此並不以此為限。The package structure 100a of the present embodiment may further include two external components 140a, 140b, wherein the external components 140a, 140b are, for example, a metal block. In detail, the external component 140a is disposed on the bearing surface 112 of the transparent substrate 110a, and the external component 140a and the LEDs 120a-120e have substantially the same height, and the external component 140b is disposed on the first control wafer 132. The first control chip 132 can be electrically connected to an external circuit (not shown) through the external components 140a, 140b, which can increase the applicability of the package structure 100a. The external component 140a can be electrically connected to the first control die 132 by a flip-chip bonding manner by the conductive component 170 (for example, a conductive bump), and the external component 140b can be electrically connected to the first control die 132 by the conductive paste 172. Sexual connection. Of course, in the other embodiments, the external components 140a and 140b can be electrically connected to the first control chip 132 through a wire bonding method, a soldering method, or other suitable manner, which is not limited thereto.

值得一提的是，本發明並不限定外接元件140a、140b的個數、位置與型態，雖然此處所提及的外接元件140a、140b具體化為兩個金屬塊，且分別為位於透光基板110a的承載表面112上以及第一控制晶片132相對遠離透光基板110a的一側表面上，但於其他未繪示的實施例中，外接元件140a、140b的型態亦可為一電路板或一導線架；亦可只選用外接元件140a或140b其中一個來電性連接控制晶片130；外接元件140a或140b亦可僅配置於透光基板110a上、第一控制晶片132遠離透光基板110a的一側表面上或第二控制晶片134遠離透光基板110a的一側表面上，仍屬於本發明可採用的技術方案，不脫離本發明所欲保護的範圍。It is worth mentioning that the present invention does not limit the number, position and type of the external components 140a, 140b, although the external components 140a, 140b mentioned herein are embodied as two metal blocks, respectively The bearing surface 112 of the optical substrate 110a and the surface of the first control wafer 132 are relatively far from the transparent substrate 110a. However, in other embodiments not shown, the external components 140a, 140b may also be a circuit. The board or a lead frame; or one of the external components 140a or 140b may be used to electrically connect the control chip 130; the external component 140a or 140b may be disposed only on the transparent substrate 110a, and the first control chip 132 is away from the transparent substrate 110a. On one side of the surface or on the side of the second control wafer 134 away from the transparent substrate 110a, the invention can be applied without departing from the scope of the invention.

以下將利用多個不同之實施例來分別說明封裝結構100b～100p之設計。在此必須說明的是，下述實施例沿用前述實施例的元件標號與部分內容，其中採用相同的標號來表示相同或近似的元件，並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例，下述實施例不再重複贅述。The design of the package structures 100b to 100p will be separately described below using a plurality of different embodiments. It is to be noted that the following embodiments use the same reference numerals and parts of the above-mentioned embodiments, and the same reference numerals are used to refer to the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted portions, reference may be made to the foregoing embodiments, and the following embodiments are not repeated.

圖2為本發明之另一實施例之一種封裝結構的剖面示意圖。請同時參考圖1與圖2，圖2之封裝結構100b與圖1之封裝結構100a相似，其不同之處在於：圖2之封裝結構100b之發光二極體120f具有一第一引腳126a與一第二引腳126b，且第一控制晶片132以及第二控制晶片134各別透過導電元件170連接到發光二極體120f的第一引腳126a以及第二引腳126b。也就是說，發光二極體120f透過位於第一引腳126a及第二引腳126b上之導電元件170同時與第一控制晶片132以及第二控制晶片134電性連接。換言之，發光二極體120a、120b、120d、120e、120f可由單一控制晶片或多個控制晶片來驅動，意即發光二極體120a、120b可由第一控制晶片132來驅動，發光二極體120d、120e可由第二控制晶片134來驅動，而發光二極體120f可由第一控制晶片132與第二控制晶片134來共同驅動。2 is a cross-sectional view showing a package structure according to another embodiment of the present invention. Referring to FIG. 1 and FIG. 2 simultaneously, the package structure 100b of FIG. 2 is similar to the package structure 100a of FIG. 1, except that the LED 201f of the package structure 100b of FIG. 2 has a first pin 126a and A second pin 126b, and the first control chip 132 and the second control chip 134 are respectively connected to the first pin 126a and the second pin 126b of the LED 120f through the conductive element 170. That is, the LEDs 120f are electrically connected to the first control wafer 132 and the second control wafer 134 through the conductive elements 170 on the first and second leads 126a and 126b. In other words, the light emitting diodes 120a, 120b, 120d, 120e, 120f can be driven by a single control wafer or a plurality of control wafers, that is, the light emitting diodes 120a, 120b can be driven by the first control wafer 132, and the light emitting diode 120d 120e may be driven by the second control wafer 134, and the light emitting diode 120f may be commonly driven by the first control wafer 132 and the second control wafer 134.

圖3為本發明之另一實施例之一種封裝結構的剖面示意圖。請同時參考圖1與圖3，圖3之封裝結構100c與圖1之封裝結構100a相似，其不同之處在於：圖3之封裝結構100c更包括二橋接元件150a、150b，其中橋接元件150a配置於透光基板110a的承載表面112上，且橋接元件150a透過導電元件170以覆晶結合的方式電性連接至第一控制晶片132與第二控制晶片134，而橋接元件150b配置於控制晶片130上，且橋接元件150b透過導電膠172電性連接第一控制晶片132與第二控制晶片134。橋接元件150a、150b可例如是一導線架、一金屬塊或一印刷電路板。3 is a cross-sectional view showing a package structure according to another embodiment of the present invention. Referring to FIG. 1 and FIG. 3 simultaneously, the package structure 100c of FIG. 3 is similar to the package structure 100a of FIG. 1, except that the package structure 100c of FIG. 3 further includes two bridging elements 150a, 150b, wherein the bridging element 150a is configured. On the carrying surface 112 of the transparent substrate 110a, the bridging element 150a is electrically connected to the first control wafer 132 and the second control wafer 134 through the conductive element 170, and the bridging element 150b is disposed on the control wafer 130. The bridging element 150b is electrically connected to the first control wafer 132 and the second control wafer 134 through the conductive adhesive 172. The bridging elements 150a, 150b can be, for example, a lead frame, a metal block or a printed circuit board.

在此必須說明的是，本發明並不限定橋接元件150a、150b的個數與型態，雖然此處所提及的橋接元件150a、150b具體化為兩個，且分別為位於透光基板110a的承載表面112上以及控制晶片130相對遠離透光基板110a的一側表面上，並分別透過覆晶結合與導電膠172電性連接至第一控制晶片132與第二控制晶片134，但於其他未繪示的實施例中，亦可只選用橋接元件150a或150b其中一個來橋接控制晶片130；橋接元件150a或150b亦可配置於透光基板110a上或控制晶片130遠離透光基板110a的一側表面上；橋接元件150a或150b亦可透過其他方式，例如是打線接合方式、焊接方式或其他適合的方式電性連接第一控制晶片132與第二控制晶片134，仍屬於本發明可採用的技術方案，不脫離本發明所欲保護的範圍。It should be noted that the present invention does not limit the number and type of the bridging elements 150a, 150b, although the bridging elements 150a, 150b mentioned herein are embodied in two, and are respectively located on the transparent substrate 110a. On the bearing surface 112 and on the side surface of the control wafer 130 that is relatively far from the transparent substrate 110a, and electrically connected to the first control wafer 132 and the second control wafer 134 through the flip chip bonding and the conductive paste 172, respectively, but other In an embodiment not shown, only one of the bridging elements 150a or 150b may be used to bridge the control wafer 130; the bridging element 150a or 150b may also be disposed on the transparent substrate 110a or control the wafer 130 away from the transparent substrate 110a. On the side surface, the bridging element 150a or 150b can be electrically connected to the first control wafer 132 and the second control wafer 134 by other means, such as wire bonding, soldering or other suitable manner, which is still applicable to the present invention. The technical solution does not depart from the scope of the invention as intended.

圖4為本發明之另一實施例之一種封裝結構的剖面示意圖。請同時參考圖1與圖4，圖4之封裝結構100d與圖1之封裝結構100a相似，其不同之處在於：圖4之封裝結構100d更包括一光調整物質160a，其中光調整物質160a配置於透光基板110a的承載表面112上，且光調整物質160a為一連續之光調整物質層。此外，光調整物質160a可例如是螢光物質或散色物質。當發光二極體120a～120e所發出的光線從同一平面進入透光基板110a時，光調整物質160a可改變光線的波長與調整光路徑，使射出透光基板110a的光具有較佳的均勻度，進而可提升封裝結構100d的出光效果。4 is a cross-sectional view showing a package structure according to another embodiment of the present invention. The package structure 100d of FIG. The light-adjusting substance 160a is a continuous light-adjusting substance layer on the bearing surface 112 of the light-transmitting substrate 110a. Further, the light adjusting substance 160a may be, for example, a fluorescent substance or a discolored substance. When the light emitted by the LEDs 120a-120e enters the transparent substrate 110a from the same plane, the light adjusting substance 160a can change the wavelength of the light and adjust the light path, so that the light emitted from the transparent substrate 110a has better uniformity. In turn, the light-emitting effect of the package structure 100d can be improved.

值得一提的是，本發明並不限定光調整物質160a的位置。舉例而言，於其他實施例中，請參考圖5，封裝結構100e之光調整物質160b可內埋於透光基板110a中，或者，請參考圖6，封裝結構100f之光調整物質160c可配置於透光基板110a的側邊，或者，請參考圖7，封裝結構100g之光調整物質160d可配置於透光基板110a之一相對承載表面112的底面114上。簡言之，光調整物質160a～160d可依使用者之需求而隨意配置於透光基板110a的表面或內埋於透光基板110a中，當然，亦可同時配置於透光基板110a的表面與內埋於透光基板110a中，在此並不以此為限。It is worth mentioning that the present invention does not limit the position of the light adjusting substance 160a. For example, in other embodiments, referring to FIG. 5, the light adjusting substance 160b of the package structure 100e may be embedded in the transparent substrate 110a, or, referring to FIG. 6, the light adjusting substance 160c of the package structure 100f may be configured. On the side of the transparent substrate 110a, or referring to FIG. 7, the light adjusting substance 160d of the package structure 100g may be disposed on the bottom surface 114 of one of the transparent substrate 110a opposite to the bearing surface 112. In short, the light-adjusting materials 160a-160d can be disposed on the surface of the transparent substrate 110a or embedded in the transparent substrate 110a, or can be disposed on the surface of the transparent substrate 110a at the same time. It is embedded in the transparent substrate 110a, and is not limited thereto.

當然，本發明亦不限定光調整結構160a的形態。舉例而言，於其他實施例中，請參考圖8，封裝結構100h之光調整物質160e可為多個光調整物質圖案，例如是多個密度分佈均勻之非連續片狀圖案，且此光調整物質160e可例如是螢光物質、散射物質或反射物質。此處之光調整物質160e分佈於透光基板110a的表面以及內埋於透光基板110a內，其除了可調整光能量之分佈(即光形)外，配置於透光基板110a之承載表面112的光調整物質160e亦可作為設置發光二極體120a～120e時對準用之標記物。Of course, the present invention also does not limit the form of the light adjustment structure 160a. For example, in other embodiments, referring to FIG. 8 , the light adjusting substance 160 e of the package structure 100 h may be a plurality of light adjusting substance patterns, for example, a plurality of non-continuous sheet patterns having uniform density distribution, and the light adjustment is performed. The substance 160e can be, for example, a fluorescent substance, a scattering substance, or a reflective substance. The light-adjusting material 160e is disposed on the surface of the transparent substrate 110a and embedded in the transparent substrate 110a. The light-adjusting material 160e is disposed in the transparent substrate 110a. The light-adjusting material 160e is disposed on the bearing surface 112 of the transparent substrate 110a except for the distribution of the adjustable light energy (ie, the light shape). The light-adjusting substance 160e can also be used as a marker for alignment when the light-emitting diodes 120a to 120e are provided.

另一方面，本發明還可以藉由位於透光基板110a上或透光基板110a內的光調整物質162來作為配置發光二極體121的對位圖案。具體來說，請參考圖9，在本實施例中，透光基板110a上具有光調整物質162，而發光二極體121可透過光調整物質162來進行對位而配置於透光基板110a上。也就是說，光調整物質162與發光二極體121於透光基板110a上對應設置。如此一來，可降低製程時發光二極體121的對位難度，可減少製程誤差，以提高製程良率。On the other hand, the present invention can also be used as the alignment pattern of the light-emitting diode 121 by the light-adjusting substance 162 located on the light-transmitting substrate 110a or in the light-transmitting substrate 110a. Specifically, please refer to FIG. 9. In this embodiment, the light-transmitting substrate 110a has a light-adjusting substance 162, and the light-emitting diode 121 is disposed on the light-transmitting substrate 110a through the light-adjusting substance 162. . That is, the light adjusting substance 162 and the light emitting diode 121 are disposed corresponding to the light transmitting substrate 110a. In this way, the alignment difficulty of the light-emitting diode 121 during the process can be reduced, and the process error can be reduced to improve the process yield.

此外，請參考圖10，封裝結構100i之光調整物質160f亦可例如是多個密度分佈均勻之非連續塊狀圖案，且此處之光調整物質160f亦可分佈於透光基板110a的表面以及內埋於透光基板110a內。此處之光調整物質160f亦可作為設置發光二極體120a～120e時對準用之立體標記物。若當光調整物質160f配置於透光基板110a之承載表面112上時，發光二極體120d與發光二極體120e之間產生一高度差，此時可透過堆疊導電元件170於發光二極體120d之接合面124d上，來使第二控制晶片134可水平地配置於發光二極體120d、120e上。再者，請參考圖11，封裝結構100j之透光基板110b亦可例如為多層板結構，意即透光基板110b可由層板結構116、117、118所組成，其中光調整物質160f可位於層板結構116、117、118的表面或內部，亦及每一層板結構116(或層板結構117、118)皆具有光調整物質160f。也就是說，本實施例之封裝結構100j的設計可以在不同的區塊或層次中進行不同的光轉換(例如在層板結構116中進行藍光轉紅光；在層板結構117中進行藍光轉黃光；在層板結構118中進行藍光轉綠光)，以提昇整體的轉換效率，或調整不同出光角的色度。In addition, referring to FIG. 10, the light adjusting substance 160f of the package structure 100i may be, for example, a plurality of non-continuous block patterns having uniform density distribution, and the light adjusting substance 160f may be distributed on the surface of the transparent substrate 110a and It is embedded in the transparent substrate 110a. Here, the light adjusting substance 160f can also be used as a three-dimensional mark for alignment when the light emitting diodes 120a to 120e are provided. When the light adjusting material 160f is disposed on the carrying surface 112 of the transparent substrate 110a, a height difference is generated between the light emitting diode 120d and the light emitting diode 120e, and the conductive element 170 can be transmitted through the stacked conductive element 170 to the light emitting diode. The second control wafer 134 is horizontally disposed on the light-emitting diodes 120d, 120e on the bonding surface 124d of 120d. Moreover, referring to FIG. 11 , the transparent substrate 110 b of the package structure 100 j may also be, for example, a multi-layer board structure, that is, the transparent substrate 110 b may be composed of the layer structures 116 , 117 , 118 , wherein the light adjusting substance 160 f may be located in the layer. The surface or interior of the plate structures 116, 117, 118, and each of the ply structures 116 (or ply structures 117, 118) have light-adjusting materials 160f. That is, the design of the package structure 100j of the present embodiment can perform different light conversions in different blocks or layers (for example, blue light red light in the laminate structure 116; blue light transfer in the laminate structure 117) Yellow light; blue light to green light in the layer structure 118 to improve the overall conversion efficiency, or adjust the chromaticity of different exit angles.

簡言之，使用者可透過所選擇之光調整物質160a～160f的型態與配置位置以及透光基板110a～110b的型態，來調整發光二極體120a～120e所發出之光線的波長、光路徑或光形，以使封裝結構100d～100j具有較佳的出光效果。此外，於上述實施例中，光調整物質160a～160f呈現不佈滿於透光基板110a、110b上的配置方式，且光調整物質160e～160f的厚度亦可呈現厚度不均的現象。當發光二極體120a～120e所發出之光穿透透光基板110a、110b時，部分的光會直接穿透透光基板110a、110b而呈現原發光二極體120a～120e所發出的色光，例如是藍光，而另一部分的光會激發光調整物質160a～160f而產生不同於原發光二極體120a～120e所發出的色光，例如是綠光。如此一來，封裝結構100d～100j可透過光調整物質160e～160f來改變發光二極體120a～120e的出光強度，色度，色溫，以及不同發光二極體120a～120e所發出不同色調的混合光效果，並透過控制晶片130來調整整體封裝結構100d～100j的出光效果。換言之，光調整物質160a～160f呈現不佈滿於透光基板110a、110b上的配置方式，可有效提昇封裝結構100d～100j整體的出光效率。另外，上述之實施例僅為舉例說明，本領域的技術人員當可參照前述實施例的說明，依據實際需求而選用前述構件或加以組合，以達到所需的技術效果。In short, the user can adjust the wavelength of the light emitted by the LEDs 120a to 120e by the type and arrangement position of the selected light adjusting substances 160a to 160f and the type of the transparent substrates 110a to 110b. The light path or light shape is such that the package structures 100d to 100j have a better light-emitting effect. Further, in the above embodiment, the light-adjusting substances 160a to 160f are arranged so as not to be covered on the light-transmitting substrates 110a and 110b, and the thickness of the light-adjusting substances 160e to 160f may be uneven. When the light emitted by the LEDs 120a to 120e penetrates the transparent substrates 110a and 110b, part of the light directly penetrates the transparent substrates 110a and 110b to exhibit the color light emitted by the original LEDs 120a to 120e. For example, blue light is emitted, and another portion of the light excites the light-adjusting substances 160a to 160f to generate color light different from that of the original light-emitting diodes 120a to 120e, for example, green light. In this way, the package structures 100d-100j can change the light-emitting intensity, the chromaticity, the color temperature, and the mixing of the different hues emitted by the different LEDs 120a-120e through the light-adjusting substances 160e-160f. The light effect is applied, and the light-emitting effect of the overall package structures 100d to 100j is adjusted by controlling the wafer 130. In other words, the light-adjusting substances 160a to 160f are arranged so as not to be covered on the transparent substrates 110a and 110b, and the light-emitting efficiency of the entire package structures 100d to 100j can be effectively improved. In addition, the above embodiments are merely illustrative, and those skilled in the art can refer to the foregoing embodiments to select the foregoing components or combine them according to actual needs to achieve the desired technical effects.

圖12為本發明之另一實施例之一種封裝結構的剖面示意圖。請同時參考圖12與圖1，圖12之封裝結構100k與圖1之封裝結構100a相似，其不同之處在於：圖12之封裝結構100k的發光二極體120a1～120e1的型態與圖1之發光二極體120a～120e的型態不同。詳細而言，以圖12之發光二極體120c1為例，發光二極體120c1的接合側124c1具有一第一接合部124c2以及一第二接合部124c3，導電元件170可包括第一導電元件170a與第二導電元件170b，而第一導電元件170a配置於發光二極體120c1的第一接合部124c2，第二導電元件170b配置於發光二極體120c1的第二接合部124c3，其中第一接合部124c2與第二接合部124c3具有一高度差h1，第一導電元件170a的高度為h2，第二導電元件170b的高度為h3，則較佳地h1+h2=h3。FIG. 12 is a cross-sectional view showing a package structure according to another embodiment of the present invention. Referring to FIG. 12 and FIG. 1 simultaneously, the package structure 100k of FIG. 12 is similar to the package structure 100a of FIG. 1 except that the types of the LEDs 120a1 to 120e1 of the package structure 100k of FIG. 12 and FIG. The types of the light-emitting diodes 120a to 120e are different. In detail, taking the light-emitting diode 120c1 of FIG. 12 as an example, the bonding side 124c1 of the light-emitting diode 120c1 has a first bonding portion 124c2 and a second bonding portion 124c3, and the conductive member 170 may include the first conductive member 170a. And the second conductive element 170b, wherein the first conductive element 170a is disposed on the first bonding portion 124c2 of the light emitting diode 120c1, and the second conductive element 170b is disposed in the second bonding portion 124c3 of the light emitting diode 120c1, wherein the first bonding The portion 124c2 and the second joint portion 124c3 have a height difference h1, the height of the first conductive element 170a is h2, and the height of the second conductive element 170b is h3, preferably h1+h2=h3.

由於發光二極體120c1的第一接合部124c2與第二接合部124c3具有高度差h1，因此可透過具有不同高度之第一導電元件170a與第二導電元件170b來調整此高度差h1，可有效提昇與控制晶片130覆晶接合的良率。此處之第一導電元件170a或第二導電元件170b可由一個導電凸塊所構成或由多個導電凸塊堆疊而成，可視第一接合部124c2與第二接合部124c3之間的高度差而定，在此並不予以限定。同理，發光二極體120a1、120b1、120d1、120e1皆與發光二極體120c1具有相同的型態，請參考上述之說明，在此不再贅述。此外，此處所述之導電凸塊是透過打線機於第一接合部124c2與第二接合部124c3上打上的金屬球或金屬塊，其中金屬例如是金或鋁。Since the first joint portion 124c2 and the second joint portion 124c3 of the light-emitting diode 120c1 have a height difference h1, the height difference h1 can be adjusted by transmitting the first conductive member 170a and the second conductive member 170b having different heights, which is effective. The yield of the flip chip bonding of the control wafer 130 is improved. Here, the first conductive element 170a or the second conductive element 170b may be formed by one conductive bump or stacked by a plurality of conductive bumps, depending on the difference in height between the first joint portion 124c2 and the second joint portion 124c3. It is not limited here. For the same reason, the LEDs 120a1, 120b1, 120d1, and 120e1 have the same type as the LEDs 120c1. Please refer to the above description, and details are not described herein again. In addition, the conductive bumps described herein are metal balls or metal blocks that are applied to the first joint portion 124c2 and the second joint portion 124c3 through the wire bonding machine, wherein the metal is, for example, gold or aluminum.

圖13為本發明之另一實施例之一種封裝結構的剖面示意圖。請同時參考圖13與圖1，圖13之封裝結構100l與圖1之封裝結構100a相似，其不同之處在於：圖13之封裝結構100l更包括一封裝膠體180，其中封裝膠體180配置於透光基板110a的承載表面112上，且至少包覆發光二極體120a～120e，可避免發光二極體120a～120e受到外界物質的影響。具體而言，在本實施例中，封裝膠體180填充於發光二極體120a～120e與第一控制晶片132及第二控制晶片134之間，也就是說，封裝膠體180包覆發光二極體120a～120e與導電元件170，以及覆蓋部分透光基板110a的承載表面112、第一控制晶片132與第二控制晶片134相鄰發光二極體120a～120e的表面以及外接元件140a的部分表面。此外，此處之封裝膠體180除了具有保護發光二極體120a～120e的功能外，亦具有導光與散熱的作用。FIG. 13 is a cross-sectional view showing a package structure according to another embodiment of the present invention. The package structure 1001 of FIG. The light-emitting diodes 120a to 120e are covered on the bearing surface 112 of the optical substrate 110a, and at least the light-emitting diodes 120a to 120e are prevented from being affected by external substances. Specifically, in the embodiment, the encapsulant 180 is filled between the LEDs 120a-120e and the first control wafer 132 and the second control wafer 134, that is, the encapsulant 180 encapsulates the LED. 120a-120e and the conductive member 170, and the bearing surface 112 covering the partially transparent substrate 110a, the first control wafer 132 and the second control wafer 134 are adjacent to the surface of the light-emitting diodes 120a-120e and a part of the surface of the external component 140a. In addition, the encapsulant 180 herein has the functions of shielding the light-emitting diodes 120a-120e, and also has the functions of guiding light and dissipating heat.

圖14為本發明之另一實施例之一種封裝結構的剖面示意圖。請同時參考圖14與圖1，圖14之封裝結構100m與圖1之封裝結構100a相似，其不同之處在於：圖14之封裝結構100m更包括一散熱元件185，其中散熱元件185配置於控制晶片130相對遠離透光基板110a的一側，可有效將第一控制晶片132與第二控制晶片134運作時所產生的傳導至外界，以使得封裝結構100m具有較佳的散熱效果。Figure 14 is a cross-sectional view showing a package structure in accordance with another embodiment of the present invention. Referring to FIG. 14 and FIG. 1 simultaneously, the package structure 100m of FIG. 14 is similar to the package structure 100a of FIG. 1 , except that the package structure 100m of FIG. 14 further includes a heat dissipation component 185, wherein the heat dissipation component 185 is configured to be controlled. The side of the wafer 130 away from the transparent substrate 110a can effectively conduct the first control wafer 132 and the second control wafer 134 to the outside when the operation of the second control wafer 132 is performed, so that the package structure 100m has a better heat dissipation effect.

圖15為本發明之另一實施例之一種封裝結構的剖面示意圖。請同時參考圖15與圖1，圖15之封裝結構100n與圖1之封裝結構100a相似，其不同之處在於：圖15之封裝結構100n更包括一透光膠層190，其中透光膠層190配置於發光二極體120a～120e的出光側122a～122e與透光基板110a的承載表面112之間以及外接元件140a與透光基板110a的承載表面112之間，意即發光二極體120a～120e可透過透光膠層190而固定於透光基板110a上，而外接元件140a可透過透光膠層190而固定於透光基板110a上。此處之透光膠層190可有效增加發光二極體120a～120e與透光基板110a之間的黏著力以及外接元件140a與透光基板110a之間的黏著力，提昇封裝結構100n的可靠度。Figure 15 is a cross-sectional view showing a package structure in accordance with another embodiment of the present invention. Referring to FIG. 15 and FIG. 1 , the package structure 100 n of FIG. 15 is similar to the package structure 100 a of FIG. 1 , except that the package structure 100 n of FIG. 15 further includes a transparent adhesive layer 190 , wherein the transparent adhesive layer 190 is disposed between the light-emitting sides 122a-122e of the light-emitting diodes 120a-120e and the bearing surface 112 of the transparent substrate 110a and between the external component 140a and the bearing surface 112 of the transparent substrate 110a, that is, the light-emitting diode 120a ～120e can be fixed on the transparent substrate 110a through the transparent adhesive layer 190, and the external component 140a can be fixed on the transparent substrate 110a through the transparent adhesive layer 190. The light-transmitting adhesive layer 190 can effectively increase the adhesion between the light-emitting diodes 120a-120e and the transparent substrate 110a and the adhesion between the external component 140a and the transparent substrate 110a, thereby improving the reliability of the package structure 100n. .

圖16為本發明之另一實施例之一種封裝結構的剖面示意圖。請同時參考圖16與圖1，圖16之封裝結構100o與圖1之封裝結構100a相似，其不同之處在於：圖16之封裝結構100o更包括一光路徑調整結構195a，其中光路徑調整結構195a配置於透光基板110a之一相對於承載表面112的底面114上。此處之光路徑調整結構195a例如是多個透鏡，用以影響發光二極體120a～120e所發出之光線，以調整光路徑，並可提昇封裝結構100o的出光效率與出光均勻度。Figure 16 is a cross-sectional view showing a package structure in accordance with another embodiment of the present invention. Referring to FIG. 16 and FIG. 1 simultaneously, the package structure 100o of FIG. 16 is similar to the package structure 100a of FIG. 1, except that the package structure 100o of FIG. 16 further includes a light path adjustment structure 195a, wherein the light path adjustment structure The 195a is disposed on one of the transparent substrates 110a opposite to the bottom surface 114 of the carrying surface 112. The light path adjusting structure 195a is, for example, a plurality of lenses for influencing the light emitted by the LEDs 120a-120e to adjust the light path, and can improve the light-emitting efficiency and the light-emitting uniformity of the package structure 100o.

圖17為本發明之另一實施例之一種封裝結構的剖面示意圖。請同時參考圖17與圖16，圖17之封裝結構100p與圖16之封裝結構100o相似，其不同之處在於：圖17之封裝結構100p之光路徑調整結構195b為多個表面微結構，且此光路徑調整結構195b與透光基板110c為一體成型，其中光路徑調整結構195b例如是對透光基板110c的底面114進行表面處理所形成。Figure 17 is a cross-sectional view showing a package structure in accordance with another embodiment of the present invention. Referring to FIG. 17 and FIG. 16 simultaneously, the package structure 100p of FIG. 17 is similar to the package structure 100o of FIG. 16, except that the optical path adjustment structure 195b of the package structure 100p of FIG. 17 is a plurality of surface microstructures, and The light path adjusting structure 195b is integrally formed with the light-transmitting substrate 110c, and the light path adjusting structure 195b is formed, for example, by surface-treating the bottom surface 114 of the light-transmitting substrate 110c.

綜上所述，本發明至少具有下列功效：In summary, the present invention has at least the following effects:

1.由於本發明之發光二極體是以出光側面向透光基板而配置於透光基板的承載表面上，因此發光二極體所發出光線可從同一平面穿透透光基板而傳遞至外界，可有效提升整體發光二極體的出光均勻度。1. Since the light-emitting diode of the present invention is disposed on the bearing surface of the light-transmitting substrate with the light-emitting side surface facing the light-transmitting substrate, the light emitted by the light-emitting diode can be transmitted from the same plane through the light-transmitting substrate to the outside. It can effectively improve the uniformity of light output of the overall light-emitting diode.

2.本發明之封裝結構是將發光二極體與控制晶片採用一次覆晶的方式進行封裝，可有效減少封裝次數，且製程較為簡單、製程效率佳，進而可提升封裝結構的量產性。2. The package structure of the present invention encapsulates the light-emitting diode and the control wafer by one flip chip, which can effectively reduce the number of packages, and has a simple process and good process efficiency, thereby improving the mass production of the package structure.

3.本發明提之控制晶片以覆晶方式配置於已平整地排列於透光基板上的發光二極體上，因此本發明適用於小尺寸之發光二極體的封裝，並有利於量產以及降低製作成本。3. The control wafer of the present invention is arranged on the light-emitting diode which is evenly arranged on the light-transmitting substrate in a flip chip manner. Therefore, the present invention is suitable for packaging of a small-sized light-emitting diode and is advantageous for mass production. And reduce production costs.

4.由於本發明所採用的覆晶方式與現有之晶片的覆晶結構相類似，因此可以使用現有的覆晶製程以及製程設備，可提高封裝結構的量產性與產品的良率。4. Since the flip chip method used in the present invention is similar to the flip chip structure of the conventional wafer, the existing flip chip process and process equipment can be used, and the mass production of the package structure and the yield of the product can be improved.

5.由於控制晶片是直接與發光二極體一起封裝，因此可有效縮小整體封裝結構的體積與降低生產成本。5. Since the control wafer is directly packaged together with the light emitting diode, the volume of the overall package structure can be effectively reduced and the production cost can be reduced.

6.本發明之封裝結構因具有外接元件，因此控制晶片可透過外接元件與外部電路電性連接，可增加封裝結構的應用性。6. Since the package structure of the present invention has an external component, the control chip can be electrically connected to the external circuit through the external component, which can increase the applicability of the package structure.

7.本發明之封裝結構亦可包括光調整物質或光路徑調整結構，來調整發光二極體所發出之光線的波長、光路徑或光形，以使封裝結構具有較佳的出光效果。7. The package structure of the present invention may further comprise a light adjusting substance or a light path adjusting structure to adjust a wavelength, a light path or a light shape of the light emitted by the light emitting diode, so that the package structure has a better light emitting effect.

8.本發明之封裝結構亦可包括散熱元件，可有效將控制晶片所產生的熱能傳導至外界，使得封裝結構具有較佳的散熱效果。8. The package structure of the present invention can also include a heat dissipating component, which can effectively conduct heat generated by the control wafer to the outside, so that the package structure has better heat dissipation effect.

9.本發明之透光基板可選擇與發光二極體相匹配的折射率，以增加封裝結構整體的光出效率。9. The light-transmitting substrate of the present invention can select a refractive index matched with the light-emitting diode to increase the light-emitting efficiency of the package structure as a whole.

10.本發明之透光基板以及控制晶片有助於發光二極體的散熱，可提升整體封裝結構的散熱效率。10. The transparent substrate and the control wafer of the present invention contribute to heat dissipation of the LED, and the heat dissipation efficiency of the overall package structure can be improved.

雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，故本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.

100a～100p．．．封裝結構100a～100p. . . Package structure

110a～110c．．．透光基板110a～110c. . . Light transmissive substrate

112．．．承載表面112. . . Bearing surface

114．．．底面114. . . Bottom

116～118．．．層板結構116~118. . . Laminate structure

120a～120f、120a1～120e1、121．．．發光二極體120a～120f, 120a1～120e1, 121. . . Light-emitting diode

122a～122e．．．出光側122a～122e. . . Light exit side

124a～124e、124c1．．．接合側124a～124e, 124c1. . . Joint side

124c2．．．第一接合部124c2. . . First joint

124c3．．．第二接合部124c3. . . Second joint

126a．．．第一引腳126a. . . First pin

126b．．．第二引腳126b. . . Second pin

130．．．控制晶片130. . . Control chip

132．．．第一控制晶片132. . . First control chip

134．．．第二控制晶片134. . . Second control chip

140a、140b．．．外接元件140a, 140b. . . External component

150a、150b．．．橋接元件150a, 150b. . . Bridging element

160a～160f、162．．．光調整物質160a～160f,162. . . Light adjusting substance

170．．．導電元件170. . . Conductive component

170a．．．第一導電元件170a. . . First conductive element

170b．．．第二導電元件170b. . . Second conductive element

172．．．導電膠172. . . Conductive plastic

180．．．封裝膠體180. . . Encapsulant

185．．．散熱元件185. . . Heat sink

190．．．透光膠層190. . . Light-transmitting adhesive layer

195a、195b．．．光路徑調整結構195a, 195b. . . Light path adjustment structure

h1．．．高度差H1. . . Height difference

h2、h3．．．高度H2, h3. . . height

圖1為本發明之一實施例之一種封裝結構的剖面示意圖。1 is a cross-sectional view showing a package structure according to an embodiment of the present invention.

圖2為本發明之另一實施例之一種封裝結構的剖面示意圖。2 is a cross-sectional view showing a package structure according to another embodiment of the present invention.

圖3為本發明之另一實施例之一種封裝結構的剖面示意圖。3 is a cross-sectional view showing a package structure according to another embodiment of the present invention.

圖4為本發明之另一實施例之一種封裝結構的剖面示意圖。4 is a cross-sectional view showing a package structure according to another embodiment of the present invention.

圖5為本發明之另一實施例之一種封裝結構的剖面示意圖。FIG. 5 is a cross-sectional view showing a package structure according to another embodiment of the present invention.

圖6為本發明之另一實施例之一種封裝結構的剖面示意圖。6 is a cross-sectional view showing a package structure according to another embodiment of the present invention.

圖7為本發明之另一實施例之一種封裝結構的剖面示意圖。FIG. 7 is a cross-sectional view showing a package structure according to another embodiment of the present invention.

圖8為本發明之另一實施例之一種封裝結構的剖面示意圖。FIG. 8 is a cross-sectional view showing a package structure according to another embodiment of the present invention.

圖9為本發明之一實施例之發光二極體與光調整物質位置對應關係的示意圖。Fig. 9 is a schematic view showing the positional relationship between a light-emitting diode and a light-adjusting substance according to an embodiment of the present invention.

圖10為本發明之另一實施例之一種封裝結構的剖面示意圖。FIG. 10 is a cross-sectional view showing a package structure according to another embodiment of the present invention.

圖11為本發明之另一實施例之一種封裝結構的剖面示意圖。11 is a cross-sectional view showing a package structure according to another embodiment of the present invention.

圖12為本發明之另一實施例之一種封裝結構的剖面示意圖。FIG. 12 is a cross-sectional view showing a package structure according to another embodiment of the present invention.

圖13為本發明之另一實施例之一種封裝結構的剖面示意圖。FIG. 13 is a cross-sectional view showing a package structure according to another embodiment of the present invention.

圖14為本發明之另一實施例之一種封裝結構的剖面示意圖。Figure 14 is a cross-sectional view showing a package structure in accordance with another embodiment of the present invention.

圖15為本發明之另一實施例之一種封裝結構的剖面示意圖。Figure 15 is a cross-sectional view showing a package structure in accordance with another embodiment of the present invention.

圖16為本發明之另一實施例之一種封裝結構的剖面示意圖。Figure 16 is a cross-sectional view showing a package structure in accordance with another embodiment of the present invention.

圖17為本發明之另一實施例之一種封裝結構的剖面示意圖。Figure 17 is a cross-sectional view showing a package structure in accordance with another embodiment of the present invention.

100a．．．封裝結構100a. . . Package structure

110a．．．透光基板110a. . . Light transmissive substrate

112．．．承載表面112. . . Bearing surface

120a～120e．．．發光二極體120a～120e. . . Light-emitting diode

122a～122e．．．出光側122a～122e. . . Light exit side

124a～124e．．．接合側124a～124e. . . Joint side

130．．．控制晶片130. . . Control chip

132．．．第一控制晶片132. . . First control chip

134．．．第二控制晶片134. . . Second control chip

140a、140b．．．外接元件140a, 140b. . . External component

170．．．導電元件170. . . Conductive component

172．．．導電膠172. . . Conductive plastic

Claims (22)

一種封裝結構，包括：一透光基板，具有一承載表面；多個發光二極體，每一發光二極體具有相對的一出光側與一接合側，且每一發光二極體以該出光側面向該透光基板而共平面地貼合於該承載表面上；以及至少一控制晶片，配置於該些發光二極體的該些接合側，且該控制晶片與該些發光二極體電性連接。 A package structure comprising: a light-transmissive substrate having a bearing surface; a plurality of light-emitting diodes, each light-emitting diode having an opposite light-emitting side and a joint side, and each light-emitting diode is used for the light-emitting diode The side surface of the light-emitting substrate is coplanarly attached to the bearing surface; and at least one control chip is disposed on the bonding sides of the light-emitting diodes, and the control chip and the light-emitting diodes are electrically connected Sexual connection. 如申請專利範圍第1項所述之封裝結構，更包括至少一外接元件，配置於該透光基板的該承載表面或該控制晶片上，其中該控制晶片透過該外接元件與一外部電路電性連接。 The package structure of claim 1, further comprising at least one external component disposed on the carrying surface of the transparent substrate or the control wafer, wherein the control chip is electrically connected to the external component through an external component connection. 如申請專利範圍第2項所述之封裝結構，其中該外接元件透過覆晶接合方式、打線接合方式、焊接方式或導電膠與該控制晶片電性連接。 The package structure of claim 2, wherein the external component is electrically connected to the control chip through a flip chip bonding method, a wire bonding method, a soldering method, or a conductive paste. 如申請專利範圍第2項所述之封裝結構，其中該外接元件包括一導線架、一金屬塊或一印刷電路板。 The package structure of claim 2, wherein the external component comprises a lead frame, a metal block or a printed circuit board. 如申請專利範圍第2項所述之封裝結構，其中該外接元件配置於該透光基板的該承載表面上，且該外接元件與該些發光二極體實質上具有相同的高度。 The package structure of claim 2, wherein the external component is disposed on the bearing surface of the light transmissive substrate, and the external component has substantially the same height as the light emitting diodes. 如申請專利範圍第1項所述之封裝結構，其中該至少一控制晶片包括一第一控制晶片以及一第二控制晶片，每一發光二極體具有一第一引腳與一第二引腳，且該第一控制晶片以及該第二控制晶片各別連接到同一個發光二極體的該第一引腳以及該第二引腳。 The package structure of claim 1, wherein the at least one control chip comprises a first control chip and a second control chip, each of the light emitting diodes has a first pin and a second pin And the first control chip and the second control chip are respectively connected to the first pin and the second pin of the same LED. 如申請專利範圍第1項所述之封裝結構，更包括至少一橋接元件，配置於該透光基板的該承載表面或該控制晶片上，該至少一控制晶片包括一第一控制晶片以及一第二控制晶片，而該橋接元件電性連接該第一控制晶片與該第二控制晶片。 The package structure of claim 1, further comprising at least one bridging element disposed on the carrying surface of the transparent substrate or the control wafer, the at least one control chip comprising a first control chip and a first The control chip is electrically connected to the first control wafer and the second control wafer. 如申請專利範圍第7項所述之封裝結構，其中該橋接元件透過覆晶接合方式、打線接合方式、焊接方式或導電膠來電性連接該第一控制晶片與該第二控制晶片。 The package structure of claim 7, wherein the bridging element electrically connects the first control wafer and the second control wafer by flip chip bonding, wire bonding, soldering or conductive adhesive. 如申請專利範圍第1項所述之封裝結構，更包括一光調整物質，配置於該透光基板的表面或內部。 The package structure of claim 1, further comprising a light-adjusting substance disposed on a surface or inside of the light-transmitting substrate. 如申請專利範圍第9項所述之封裝結構，其中該光調整物質包括螢光物質、散射物質或反射物質。 The package structure of claim 9, wherein the light-adjusting substance comprises a fluorescent substance, a scattering substance or a reflective substance. 如申請專利範圍第9項所述之封裝結構，其中該光調整物質為一連續之光調整物質層或多個光調整物質圖案。 The package structure of claim 9, wherein the light adjusting substance is a continuous light adjusting substance layer or a plurality of light adjusting substance patterns. 如申請專利範圍第11項所述之封裝結構，其中該光調整物質圖案與該些發光二極體對應設置。 The package structure of claim 11, wherein the light adjustment substance pattern is disposed corresponding to the light emitting diodes. 如申請專利範圍第9項所述之封裝結構，其中該透光基板為多層板結構，且該光調整物質位於每一層板結構的表面或內部。 The package structure of claim 9, wherein the light transmissive substrate is a multi-layered plate structure, and the light-adjusting substance is located on a surface or inside of each ply structure. 如申請專利範圍第1項所述之封裝結構，更包括多個導電元件，配置於每一發光二極體的接合側與該控制晶片之間，且該控制晶片透過該些導電元件電性連接至所對應的發光二極體。 The package structure of claim 1, further comprising a plurality of conductive elements disposed between the bonding side of each of the light emitting diodes and the control wafer, and the control chip is electrically connected through the conductive elements To the corresponding light-emitting diode. 如申請專利範圍第14項所述之封裝結構，其中每 一發光二極體的該接合側具有一第一接合部以及一第二接合部，該些導電元件包括多個第一導電元件與多個第二導電元件，該些第一導電元件分別配置於每一發光二極體的該第一接合部，該些第二導電元件分別配置於每一發光二極體的該第二接合部，該第一接合部與該第二接合部具有一高度差，且該高度差為h1，每一第一導電元件的高度為h2，每一第二導電元件的高度為h3，且h1+h2=h3。 Such as the package structure described in claim 14 of the patent scope, wherein each The bonding side of a light emitting diode has a first bonding portion and a second bonding portion, and the conductive elements comprise a plurality of first conductive elements and a plurality of second conductive elements, wherein the first conductive elements are respectively disposed on The first conductive portion of each of the light-emitting diodes is disposed at the second joint portion of each of the light-emitting diodes, and the first joint portion and the second joint portion have a height difference And the height difference is h1, the height of each first conductive element is h2, the height of each second conductive element is h3, and h1+h2=h3. 如申請專利範圍第15項所述之封裝結構，每一第一導電元件或每一第二導電元件係由一個導電凸塊所構成或由多個導電凸塊堆疊而成。 The package structure according to claim 15, wherein each of the first conductive elements or each of the second conductive elements is formed by one conductive bump or stacked by a plurality of conductive bumps. 如申請專利範圍第1項所述之封裝結構，更包括一封裝膠體，配置於該透光基板的該承載表面上，且至少包覆該些發光二極體。 The package structure of claim 1, further comprising an encapsulant disposed on the carrying surface of the transparent substrate and covering at least the light emitting diodes. 如申請專利範圍第1項所述之封裝結構，更包括一散熱元件，配置於該控制晶片相對遠離該透光基板的一側。 The package structure of claim 1, further comprising a heat dissipating component disposed on a side of the control wafer that is relatively far from the light transmissive substrate. 如申請專利範圍第1項所述之封裝結構，更包括一透光膠層，配置於每一發光二極體的該出光側與該透光基板的該承載表面之間。 The package structure of claim 1, further comprising a light transmissive layer disposed between the light exiting side of each of the light emitting diodes and the carrying surface of the light transmissive substrate. 如申請專利範圍第1項所述之封裝結構，更包括一光路徑調整結構，配置於該透光基板之一相對於該承載表面的底面上。 The package structure of claim 1, further comprising a light path adjusting structure disposed on a bottom surface of one of the light transmissive substrates relative to the bearing surface. 如申請專利範圍第20項所述之封裝結構，其中該光路徑調整結構包括多個透鏡或多個表面微結構。 The package structure of claim 20, wherein the light path adjustment structure comprises a plurality of lenses or a plurality of surface microstructures. 如申請專利範圍第20項所述之封裝結構，其中該光路徑調整結構與該透光基板為一體成型。The package structure of claim 20, wherein the light path adjustment structure is integrally formed with the light transmissive substrate.
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW558844B (en) * 2002-05-15 2003-10-21 Opto Tech Corp Light emitting diode capable of increasing light emitting brightness
TWM338433U (en) * 2008-02-14 2008-08-11 Orient Semiconductor Elect Ltd Multi-chip package structure
TW200843066A (en) * 2007-04-30 2008-11-01 Chipmos Technologies Inc Chip stacked package structure and applications thereof
TW200903843A (en) * 2007-07-06 2009-01-16 Formosa Epitaxy Inc Light-blending light-emitting diode
TW200921894A (en) * 2007-11-13 2009-05-16 Epistar Corp Light-emitting device package

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW558844B (en) * 2002-05-15 2003-10-21 Opto Tech Corp Light emitting diode capable of increasing light emitting brightness
TW200843066A (en) * 2007-04-30 2008-11-01 Chipmos Technologies Inc Chip stacked package structure and applications thereof
TW200903843A (en) * 2007-07-06 2009-01-16 Formosa Epitaxy Inc Light-blending light-emitting diode
TW200921894A (en) * 2007-11-13 2009-05-16 Epistar Corp Light-emitting device package
TWM338433U (en) * 2008-02-14 2008-08-11 Orient Semiconductor Elect Ltd Multi-chip package structure

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