TWI398937B - Flip chip substrate - Google Patents
Flip chip substrate Download PDFInfo
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- TWI398937B TWI398937B TW098122795A TW98122795A TWI398937B TW I398937 B TWI398937 B TW I398937B TW 098122795 A TW098122795 A TW 098122795A TW 98122795 A TW98122795 A TW 98122795A TW I398937 B TWI398937 B TW I398937B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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Description
本發明係關於可撓電路板，特別是關於具有散熱用圖案之覆晶薄膜基板(COF,Chip On Film)之容易彎曲且可防止斷裂之散熱用圖案構造。The present invention relates to a flexible circuit board, and more particularly to a heat-dissipating pattern structure which is easy to bend and prevent breakage of a chip on film having a heat dissipation pattern (COF).
可撓電路板之一型態之覆晶薄膜基板，係於聚醯亞胺薄膜等絕緣性薄膜的表面以銅等導電材料形成電路圖案者，作為絕緣性薄膜除了聚醯亞胺以外可以使用玻璃纖維環氧樹脂、聚酯、液晶高分子等。A flip-chip film substrate of one type of flexible circuit board is formed by forming a circuit pattern on a surface of an insulating film such as a polyimide film with a conductive material such as copper, and an insulating film can be used in addition to polyimide. Fiber epoxy resin, polyester, liquid crystal polymer, etc.
於絕緣性薄膜之一方面上，設有供與半導體元件之電極接合之用的內導線及與外部基板之電極接合之用的外導線，內導線與外導線被連結而圖案化。此處，內導線為了與半導體元件之細微的電極接合而被形成為線寬很細，而外導線要與外部基板之電極接合所以比起內導線來線寬被形成為很粗。In one aspect of the insulating film, an inner lead wire for bonding to an electrode of a semiconductor element and an outer lead wire for bonding to an electrode of the outer substrate are provided, and the inner lead wire and the outer lead wire are connected and patterned. Here, the inner wire is formed to have a fine line width for bonding with the fine electrode of the semiconductor element, and the outer wire is to be bonded to the electrode of the outer substrate, so that the line width is formed thicker than the inner wire.
近年來伴隨著使用覆晶薄膜基板(COF)之電子機器的多功能化或小型化，被搭載於覆晶薄膜基板的半導體元件之驅動負荷上升，特別是在顯示裝置的領域會有半導體元件發熱的問題。In recent years, with the increase in the size and size of electronic devices using a chip-on-film substrate (COF), the driving load of semiconductor devices mounted on a flip-chip substrate has increased, and in particular, semiconductor devices are heated in the field of display devices. The problem.
由此，例如於日本專利公開公報第2008-28396號所示，為了提高覆晶薄膜基板的散熱特性，在與被搭載半導體元件之面相對向的面上設有散熱用圖案以進行散熱對策。In order to improve the heat dissipation characteristics of the flip-chip substrate, a heat dissipation pattern is provided on the surface facing the surface on which the semiconductor element is mounted, for example, as shown in Japanese Laid-Open Patent Publication No. 2008-28396.
於圖1顯示從前之設置了散熱用圖案之覆晶薄膜基板之一例。Fig. 1 shows an example of a flip-chip substrate on which a heat dissipation pattern is provided.
此COF(覆晶薄膜基板)基板4，具備被連接至半導體元件之配線圖案1、絕緣性薄膜2、與散熱用圖案3。散熱用圖案3，被形成於對向於絕緣性薄膜2的半導體元件搭載面之面上，使半導體元件所產生之熱透過絕緣性薄膜2以及散熱用圖案3往外部放出。This COF (Crystalline Film Substrate) substrate 4 includes a wiring pattern 1 connected to a semiconductor element, an insulating film 2, and a heat dissipation pattern 3. The heat dissipation pattern 3 is formed on the surface of the semiconductor element mounting surface facing the insulating film 2, and the heat generated by the semiconductor element is transmitted through the insulating film 2 and the heat dissipation pattern 3 to the outside.
此外，在COF基板4之折曲的區域於散熱用圖案3設有狹縫6，防止由於折曲的荷重集中導致散熱用圖案的剝離。Further, in the region where the COF substrate 4 is bent, the slit 6 is provided in the heat dissipation pattern 3, and peeling of the heat dissipation pattern due to concentration of the load due to the bending is prevented.
然而，如圖1所示於散熱用圖案3設前述狹縫6的場合，會有由於折曲時狹縫端部7之應力集中使散熱用圖案3斷裂，或是以狹縫端部附近為基點覆晶薄膜基板容易變成被劇烈折彎的形狀而該區域的配線圖案變得容易斷線等不良情形。However, when the slit 6 is provided in the heat dissipation pattern 3 as shown in Fig. 1, the heat radiation pattern 3 may be broken due to stress concentration at the slit end portion 7 during bending, or the vicinity of the slit end portion may be The base-point flip-chip film is likely to be in a shape that is strongly bent, and the wiring pattern in this region is easily broken.
本發明係有鑑於前述情形而為之發明，目的在於提供具備容易折曲、且可防止斷裂之散熱用圖案之配線圖案很難斷線之覆晶薄膜基板。The present invention has been made in view of the above circumstances, and it is an object of the invention to provide a flip-chip substrate having a wiring pattern which is easily bent and which is capable of preventing breakage of a heat dissipation pattern from being easily broken.
為達成前述目的，本發明之覆晶薄膜基板，係具備：絕緣性薄膜、被配置於前述絕緣性薄膜之一方之面上且與半導體元件連接的配線圖案、及被配置於前述絕緣性薄膜之與被配置前述配線圖案之面相對向的面上之散熱用圖案之覆晶薄膜基板，其特徵為：在前述覆晶薄膜基板被折曲的區域之前述散熱用圖案，對折曲方向直交的方向上被形成複數開口部。In order to achieve the above object, the flip chip substrate of the present invention includes an insulating film, a wiring pattern disposed on one surface of the insulating film and connected to the semiconductor element, and a wiring film disposed on the insulating film. A flip-chip film having a heat dissipation pattern on a surface facing the surface of the wiring pattern, wherein the heat dissipation pattern in a region where the crystal film substrate is bent is orthogonal to a bending direction A plurality of openings are formed in the upper portion.
此外，本發明之覆晶薄膜基板，除了前述特徵外，還具有被形成於前述散熱用圖案之前述開口部為長圓形之特徵。Further, in addition to the above-described features, the flip chip substrate of the present invention has a feature that the opening formed in the heat dissipation pattern is oblong.
此外，本發明之覆晶薄膜基板，除了前述特徵以外，還具有被形成於對折曲方向直交的方向上之複數之前述開口部，在對折曲方向直交的方向上同形狀者被形成為直線狀，同時被形成為直線狀之同形狀之前述開口部在折曲方向上被形成複數列之特徵。Further, in addition to the above-described features, the flip chip substrate of the present invention has a plurality of openings formed in a direction orthogonal to the bending direction, and is formed into a linear shape in the direction orthogonal to the bending direction. The opening portion formed in the same shape in a straight line shape is characterized in that a plurality of rows are formed in the bending direction.
此外，本發明之覆晶薄膜基板，除了前述特徵以外，還具有被形成於對折曲方向直交的方向上之複數之前述開口部，在對折曲方向直交的方向上被形成為階梯狀或鋸齒狀，相鄰接之前述開口部僅在對折曲方向直交的方向上以至少一部份重疊的方式被形成，同時在折曲方向上被形成複數列之特徵。Further, in addition to the above-described features, the flip-chip film of the present invention has a plurality of openings formed in a direction orthogonal to the bending direction, and is formed in a stepped or zigzag shape in a direction orthogonal to the bending direction. The adjacent opening portions are formed to overlap at least partially in a direction orthogonal to the bending direction, and are characterized by a plurality of columns in the bending direction.
根據相關於本發明之覆晶薄膜基板，可提供使COF基板之折曲特性維持良好，且可以防止散熱用圖案的斷裂，提供可信賴性高的COF基板。According to the flip-chip film of the present invention, it is possible to provide a COF substrate which is excellent in reliability by maintaining the bending characteristics of the COF substrate and preventing breakage of the heat dissipation pattern.
其次，針對本發明之實施型態進行說明。Next, an embodiment of the present invention will be described.
本發明之COF基板，具備絕緣性薄膜、被配置於絕緣性薄膜之一方之面上之與半導體元件連接之配線圖案、及被配置在絕緣性薄膜之與配線圖案被配置之面相對向的面上之散熱用圖案。接著，於COF基板被折曲的區域之散熱用圖案，在對折曲方向直交的方向上被形成複數開口部。The COF substrate of the present invention includes an insulating film, a wiring pattern connected to the semiconductor element disposed on one surface of the insulating film, and a surface disposed on the surface of the insulating film facing the wiring pattern. The pattern for heat dissipation. Next, in the heat dissipation pattern in the region where the COF substrate is bent, a plurality of openings are formed in a direction orthogonal to the bending direction.
藉此，COF基板折曲時產生的應力不再集中於一部份，可以防止散熱用圖案的斷裂。此外，藉由使散熱用圖案被形成於絕緣性薄膜之面全體上可以縮短傳熱路徑，提高散熱效果。Thereby, the stress generated when the COF substrate is bent is no longer concentrated in a part, and the breakage of the heat dissipation pattern can be prevented. Further, by forming the heat dissipation pattern on the entire surface of the insulating film, the heat transfer path can be shortened, and the heat radiation effect can be improved.
此外，較佳者為被形成於散熱用圖案之開口部成長圓形。Moreover, it is preferable that the opening formed in the heat dissipation pattern is rounded.
藉此，可以緩和開口部角落的應力集中，防止開口部端面之斷裂。Thereby, stress concentration at the corners of the opening portion can be alleviated, and breakage of the end surface of the opening portion can be prevented.
此外，較佳者為對折曲方向直交的方向上形成的複數開口部，在對折曲方向直交的方向上被形成為直線狀。接著，對折曲方向直交的方向上形成的複數開口部，在折曲方向上被形成複數列。Further, it is preferable that the plurality of openings formed in the direction orthogonal to the bending direction are formed in a straight line in a direction orthogonal to the bending direction. Next, the plurality of openings formed in the direction in which the bending direction is orthogonal are formed in a plurality of rows in the bending direction.
藉此，可以防止被形成開口部的容易折曲區域平面地擴展，防止COF基板局部劇烈地被折曲。Thereby, it is possible to prevent the easily bendable region where the opening portion is formed from being planarly expanded, and to prevent the COF substrate from being partially flexed.
此外，較佳者為被形成於對折曲方向直交的方向上之複數開口部，在對折曲方向直交的方向上被形成為階梯狀或鋸齒狀。接著，使被形成為階梯狀或鋸齒狀之複數開口部僅在對折曲方向直交的方向上，相鄰接的開口部至少有一部份形成重疊。此外，對折曲方向直交的方向上形成的複數開口部，在折曲方向上被形成複數列。Further, it is preferable that the plurality of openings formed in the direction orthogonal to the bending direction are formed in a stepped shape or a zigzag shape in a direction orthogonal to the bending direction. Next, the plurality of openings formed in a stepped shape or a zigzag shape are overlapped in at least a portion of the adjacent opening portions in the direction orthogonal to the bending direction. Further, the plurality of openings formed in the direction orthogonal to the bending direction are formed in a plurality of rows in the bending direction.
藉此，被形成開口部的容易折曲區域，在其區域內的COF基板之彎曲應力變成相同，可以防止COF基板局部劇烈地被折曲。Thereby, the easily bent region where the opening is formed, the bending stress of the COF substrate in the region becomes the same, and it is possible to prevent the COF substrate from being partially flexed.
以下，參照附圖同時說明相關於本發明的COF基板之一實施例。Hereinafter, an embodiment of a COF substrate according to the present invention will be described with reference to the accompanying drawings.
圖2係顯示相關於本發明之COF基板之一實施例之圖，(a)為剖面圖，(b)為由散熱用圖案側所見之平面圖。Fig. 2 is a view showing an embodiment of a COF substrate according to the present invention, (a) being a cross-sectional view, and (b) being a plan view seen from the heat-dissipating pattern side.
於圖2，在絕緣性薄膜2之一方之面上，被配置與半導體元件接合之配線圖案1，在前述絕緣性薄膜2之與被配置前述配線圖案1之面相對向的面上被配置散熱用圖案3。In FIG. 2, on one surface of the insulating film 2, the wiring pattern 1 placed in contact with the semiconductor element is disposed on the surface of the insulating film 2 facing the surface on which the wiring pattern 1 is placed. Use pattern 3.
於COF基板4被折曲的區域之散熱用圖案3，在對折曲方向(A-A'方向)直交的方向(B-B'方向)上，被形成複數開口部5。複數之開口部5在對折曲方向(A-A'方向)直交的方向(B-B'方向)上被整列形成為直線狀，但不一定要像圖示那樣配置為直線狀。The heat dissipation pattern 3 in the region where the COF substrate 4 is bent is formed with a plurality of openings 5 in a direction (B-B' direction) orthogonal to the bending direction (A-A' direction). The plurality of openings 5 are formed in a straight line in a direction orthogonal to the bending direction (A-A' direction) (B-B' direction), but they are not necessarily arranged linearly as illustrated.
又，折曲方向(A-A'方向)係於圖2(b)以接近於左右之邊的方式，亦即以接近A與A'的方式折曲的方向。Further, the bending direction (A-A' direction) is a direction that is close to the left and right sides in FIG. 2(b), that is, a direction that is bent so as to approach A and A'.
此外，前述開口部5以形成為長圓形較佳。長圓形之長邊方向之朝向，可以是折曲方向(A-A'方向)也可以是與此直交的方向(B-B'方向)之任何一方，通常以折曲方向(A-A'方向)為長邊方向。Further, it is preferable that the opening portion 5 is formed in an oblong shape. The direction of the long side of the ellipse may be either the bending direction (A-A' direction) or the direction orthogonal to the direction (B-B' direction), usually in the bending direction (A-A) The 'direction' is the long side direction.
圖3係顯示相關於本發明之COF基板之其他實施例之散熱用圖案開口部之平面圖。Fig. 3 is a plan view showing a heat-dissipation pattern opening portion of another embodiment of the COF substrate of the present invention.
於圖3，被形成於散熱用圖案3的複數開口部5，在折曲方向(A-A'方向)上被形成複數列。In FIG. 3, the plurality of openings 5 formed in the heat dissipation pattern 3 are formed in a plurality of rows in the bending direction (A-A' direction).
亦即，對折曲方向(A-A'方向)直交的方向(B-B'方向)上形成的複數開口部5，在對折曲方向(A-A'方向)直交的方向(B-B'方向)上同形狀者被形成為直線狀。接著，對折曲方向(A-A'方向)直交的方向(B-B'方向)上形成的複數開口部5，在折曲方向(A-A'方向)上被形成複數列。That is, the plurality of openings 5 formed in the direction orthogonal to the bending direction (A-A' direction) (B-B' direction) are in the direction orthogonal to the bending direction (A-A' direction) (B-B' The same shape is formed in a straight line. Next, the plurality of openings 5 formed in the direction orthogonal to the bending direction (A-A' direction) (B-B' direction) are formed in a plurality of rows in the bending direction (A-A' direction).
圖4係顯示相關於本發明之COF基板之進而其他實施例之散熱用圖案開口部之平面圖。Fig. 4 is a plan view showing an opening of a heat dissipation pattern according to still another embodiment of the COF substrate of the present invention.
於圖4，在被形成於折曲方向(A-A'方向)的複數列之開口部5，相鄰列之開口部5之至少一部份，係以鄰接於對折曲方向(A-A'方向)直交的方向(B-B'方向)上的方式被形成。簡言之，僅在位於相鄰列的開口部5之一部分對折曲方向(A-A'方向)直交的方向(B-B'方向)上之開口部5的一部份，與使開口部5在對折曲方向(A-A'方向)直交的方向(B-B'方向)上，以至少部分重複的方式被配置。In Fig. 4, in the opening portion 5 of the plurality of rows formed in the bending direction (A-A' direction), at least a portion of the opening portion 5 of the adjacent row is adjacent to the direction of the bending (A-A) The manner in which the 'direction' is orthogonal (B-B' direction) is formed. In short, only a portion of the opening portion 5 in the direction (B-B' direction) orthogonal to the bending direction (A-A' direction) of one portion of the opening portion 5 of the adjacent row, and the opening portion 5 is arranged at least partially in a direction orthogonal to the bending direction (A-A' direction) (B-B' direction).
亦即，對折曲方向(A-A'方向)直交的方向(B-B'方向)上形成的複數開口部5，在對折曲方向(A-A'方向)直交的方向(B-B'方向)上被形成為階梯狀或鋸齒狀。接著，使被形成為階梯狀或鋸齒狀之複數開口部5僅在對折曲方向(A-A'方向)直交的方向(B-B'方向)上，以相鄰接的開口部5至少有一部份重疊的方式被形成。此外，對折曲方向(A-A'方向)直交的方向(B-B'方向)上形成的複數開口部5，在折曲方向(A-A'方向)上被形成複數列。That is, the plurality of openings 5 formed in the direction orthogonal to the bending direction (A-A' direction) (B-B' direction) are in the direction orthogonal to the bending direction (A-A' direction) (B-B' The direction is formed in a stepped or zigzag shape. Next, the plurality of openings 5 formed in a stepped or zigzag shape are at least one of the adjacent openings 5 in the direction (B-B' direction) orthogonal to the bending direction (A-A' direction). Partially overlapping ways are formed. Further, the plurality of openings 5 formed in the direction orthogonal to the bending direction (A-A' direction) (B-B' direction) are formed in a plurality of rows in the bending direction (A-A' direction).
其次，準備作為根據本發明之前述實施例3所示之設置開口部5的COF基板，準備作為比較例之設置圖1所示之從前的狹縫7之COF基板，進行以下的試驗。Next, a COF substrate provided with the opening portion 5 shown in the third embodiment of the present invention was prepared, and a COF substrate having the slit 7 as shown in Fig. 1 as a comparative example was prepared, and the following test was performed.
針對前述實施例3與從前例，以同一條件實施折曲試驗。在折曲試驗，維持荷重200g/35mm同時使半徑1mm之薄膜載體帶折曲90°，接著回到原來狀態，將此作為1個循環反覆進行10個循環。The flexural test was carried out under the same conditions as in the foregoing Example 3 and the previous example. In the flexural test, the film carrier tape having a radius of 1 mm was bent at 90° while maintaining a load of 200 g/35 mm, and then returned to the original state, and this was repeated for 10 cycles as one cycle.
結果，在從前例，實施10循環的實驗後，10個樣本中有4個樣本確認了斷線。另一方面，在本發明例，10個樣本中沒有任何被確認斷線。As a result, in the previous example, after performing the experiment of 10 cycles, 4 out of 10 samples confirmed the disconnection. On the other hand, in the example of the present invention, none of the 10 samples was confirmed to be broken.
可以適用於使用液晶面板模組等之COF基板的各種半導體裝置。It can be applied to various semiconductor devices using a COF substrate such as a liquid crystal panel module.
1．．．配線圖案1. . . Wiring pattern
2．．．絕緣性薄膜2. . . Insulating film
3．．．散熱用圖案3. . . Heat dissipation pattern
4．．．COF基板4. . . COF substrate
5．．．開口部5. . . Opening
6．．．狹縫6. . . Slit
7‧‧‧狹縫端部7‧‧‧Slit end
A-A'‧‧‧折曲方向(以接近A與A'的方式折曲之方向)A-A'‧‧‧ direction of bending (in the direction of bending near A and A')
B-B'‧‧‧對折曲方向直交的方向B-B'‧‧‧ direction of the direction of the bend
圖1係顯示從前之COF基板之圖，(a)為剖面圖，(b)為由散熱用圖案側所見之平面圖。Fig. 1 is a view showing a prior COF substrate, (a) is a cross-sectional view, and (b) is a plan view seen from the side of the heat dissipation pattern.
圖2係顯示相關於本發明之COF基板之一實施例之圖，(a)為剖面圖，(b)為由散熱用圖案側所見之平面圖。Fig. 2 is a view showing an embodiment of a COF substrate according to the present invention, (a) being a cross-sectional view, and (b) being a plan view seen from the heat-dissipating pattern side.
圖3係顯示相關於本發明之COF基板之其他實施例之由散熱用圖案側所見之平面圖。Fig. 3 is a plan view showing the side of the pattern for heat dissipation according to another embodiment of the COF substrate of the present invention.
圖4係顯示相關於本發明之COF基板之進而其他實施例之由散熱用圖案側所見之平面圖。Fig. 4 is a plan view showing the side of the heat dissipation pattern according to still another embodiment of the COF substrate of the present invention.
2．．．絕緣性薄膜2. . . Insulating film
3．．．散熱用圖案3. . . Heat dissipation pattern
5．．．開口部5. . . Opening
A-A'．．．折曲方向(以接近A與A'的方式折曲之方向)A-A'. . . Bending direction (direction of bending in a manner close to A and A')
B-B'．．．對折曲方向直交的方向B-B'. . . Direction of the direction of the bend
Claims (4)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008213921A JP4605272B2 (en) | 2008-08-22 | 2008-08-22 | COF substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201023321A TW201023321A (en) | 2010-06-16 |
| TWI398937B true TWI398937B (en) | 2013-06-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098122795A TWI398937B (en) | 2008-08-22 | 2009-07-06 | Flip chip substrate |
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| Country | Link |
|---|---|
| JP (1) | JP4605272B2 (en) |
| KR (1) | KR101061278B1 (en) |
| TW (1) | TWI398937B (en) |
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|---|---|---|---|---|
| KR101979361B1 (en) * | 2012-10-25 | 2019-05-17 | 삼성디스플레이 주식회사 | Chip on film and display device including the same |
| KR102059942B1 (en) | 2013-07-24 | 2019-12-30 | 삼성디스플레이 주식회사 | An organic light emitting display apparatus |
| KR102194822B1 (en) | 2014-01-16 | 2020-12-24 | 삼성디스플레이 주식회사 | Display apparatus reducing dead space |
| JP6301738B2 (en) * | 2014-05-29 | 2018-03-28 | 京セラ株式会社 | Electronic device mounting package and electronic device |
| CN114845464A (en) * | 2022-05-20 | 2022-08-02 | 广州华星光电半导体显示技术有限公司 | Chip on film, compensation method thereof and display device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5554885A (en) * | 1993-06-04 | 1996-09-10 | Seiko Epson Corporation | Semiconductor device including means for dispersing and absorbing tensile forces acting on film tape |
| JP2001351953A (en) * | 2001-04-09 | 2001-12-21 | Seiko Epson Corp | Tape carrier |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002232086A (en) * | 2001-02-06 | 2002-08-16 | Matsushita Electric Ind Co Ltd | Flexible substrate |
| JP2006294929A (en) * | 2005-04-12 | 2006-10-26 | Fuji Photo Film Co Ltd | Flexible printed wiring board, and camera module |
| JP5489394B2 (en) * | 2006-07-20 | 2014-05-14 | 三星電子株式会社 | COF type semiconductor package |
| KR100771890B1 (en) | 2006-07-20 | 2007-11-01 | 삼성전자주식회사 | Cof type semiconductor package |
-
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5554885A (en) * | 1993-06-04 | 1996-09-10 | Seiko Epson Corporation | Semiconductor device including means for dispersing and absorbing tensile forces acting on film tape |
| JP2001351953A (en) * | 2001-04-09 | 2001-12-21 | Seiko Epson Corp | Tape carrier |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101061278B1 (en) | 2011-08-31 |
| JP4605272B2 (en) | 2011-01-05 |
| TW201023321A (en) | 2010-06-16 |
| JP2010050330A (en) | 2010-03-04 |
| KR20100023739A (en) | 2010-03-04 |
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