TWI392582B - Method for conglutinating two objects - Google Patents

Method for conglutinating two objects Download PDF

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TWI392582B
TWI392582B TW98143545A TW98143545A TWI392582B TW I392582 B TWI392582 B TW I392582B TW 98143545 A TW98143545 A TW 98143545A TW 98143545 A TW98143545 A TW 98143545A TW I392582 B TWI392582 B TW I392582B
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substrate
carbon nanotube
bonding
substrates
layer structure
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TW98143545A
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TW201121772A (en
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Jia-Ping Wang
Shou-Shan Fan
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Hon Hai Prec Ind Co Ltd
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一種粘合兩基體的方法Method for bonding two substrates

本發明涉及一種粘合兩基體的方法。The present invention relates to a method of bonding two substrates.

先前技術中,通常會遇到將兩基體粘合於一體的情況,例如,將兩個或複數個塑膠基體粘合於一體構成一固定的形狀或使其具有一定的功能。先前的粘合兩基體的方法通常包括直接採用粘結劑粘合的方法或熱壓的方法。In the prior art, it is common to have the two substrates bonded together, for example, by bonding two or more plastic substrates together to form a fixed shape or to have a certain function. Previous methods of bonding two substrates generally included a method of directly bonding with a binder or a method of hot pressing.

該直接採用粘合劑粘合兩基體的方法為將兩個基體需要接觸的表面塗覆一定量的粘合劑,然後將兩基體粘合,烘乾粘合劑之後,兩基體便固定形成一體結構。這種粘合方法中,起粘合作用的為粘合劑。然而,由於粘合劑本身易老化且粘結力有限,這種粘合方法所粘合的兩基體結合不牢固,易脫離。The method of directly bonding two substrates by using an adhesive is to apply a certain amount of adhesive to the surface of the two substrates to be contacted, and then bonding the two substrates, and after drying the adhesive, the two substrates are fixed and integrated. structure. In this bonding method, the adhesive is an adhesive. However, since the adhesive itself is aging and the bonding strength is limited, the two substrates bonded by this bonding method are not firmly bonded and are easily detached.

所述熱壓將兩基體粘合於一體的方法係將需要粘合的兩個基體相互接觸後,在一定溫度下加熱,等基體軟化或表面部分開始液化時,對該兩個基體施加一定的壓力,使兩基體粘合於一體,待基體再固化之後,該兩基體即牢固的結合。然而,這種方法雖然可使兩個基體牢固的粘合於一體,然,由於需要對整個基體加熱使其發生結構改變或形變,易將基體破壞。且這種方法需要將兩基體整體加熱,消耗的熱量較大,不利於節約能源。The method of bonding the two substrates together by hot pressing is that after the two substrates to be bonded are brought into contact with each other, heating is performed at a certain temperature, and when the substrate is softened or the surface portion starts to be liquefied, a certain amount is applied to the two substrates. The pressure causes the two substrates to be bonded together, and after the substrate is resolidified, the two substrates are firmly bonded. However, this method allows the two substrates to be firmly bonded to one another. However, the substrate is easily broken due to the need to heat the entire substrate to cause structural changes or deformation. Moreover, this method needs to heat the two substrates as a whole, and the heat consumed is large, which is not conducive to saving energy.

有鑒於此,提供一種不破壞基體且有利於節約能源的粘合兩基體的方法實為必要。In view of this, it is necessary to provide a method of bonding two substrates without damaging the substrate and contributing to energy conservation.

本發明涉及一種粘合兩基體的方法。該粘合兩基體的方法包括以下步驟:提供一第一基體,該第一基體具有一表面;提供至少一奈米碳管膜,將該至少一奈米碳管膜設置於該第一基體的表面,構成一奈米碳管層狀結構;在奈米碳管層狀結構上間隔地設置兩個電極,該兩個電極分別與所述奈米碳管層狀結構電連接;提供一第二基體,將該第二基體覆蓋於該奈米碳管層狀結構設置,使該奈米碳管層狀結構位於第一基體和第二基體之間;施加一定電壓於該兩個電極,使該奈米碳管層狀結構升溫以使第一基體和第二基體與該奈米碳管層狀結構接觸的部分軟化或液化;施加壓力於該第一基體和第二基體之間以粘合所述第一基體與第二基體。The present invention relates to a method of bonding two substrates. The method of bonding two substrates includes the steps of: providing a first substrate having a surface; providing at least one carbon nanotube film, the at least one carbon nanotube film being disposed on the first substrate a surface, forming a carbon nanotube layer structure; two electrodes are spaced apart on the carbon nanotube layer structure, the two electrodes are respectively electrically connected to the carbon nanotube layer structure; providing a second Substrate, the second substrate is disposed on the carbon nanotube layer structure, the carbon nanotube layer structure is located between the first substrate and the second substrate; applying a certain voltage to the two electrodes, so that The carbon nanotube layer structure is heated to soften or liquefy the portion of the first substrate and the second substrate in contact with the carbon nanotube layer structure; applying pressure between the first substrate and the second substrate to bond The first substrate and the second substrate are described.

相較於先前技術,本發明所提供的粘合兩基體的方法通過採用奈米碳管層狀結構設置於第一基體和第二基體之間並與第一基體和第二基體的表面接觸,通過奈米碳管層狀結構加熱,僅使第一基體和第二基體與該奈米碳管層狀結構接觸的表面的表面軟化或液化,無需將第一基體和第二基體整體加熱,不會對基體本身造成傷害,且有利於節約能源。Compared with the prior art, the method for bonding two substrates provided by the present invention is disposed between the first substrate and the second substrate and is in contact with the surfaces of the first substrate and the second substrate by using a carbon nanotube layered structure. By heating the carbon nanotube layer structure, only the surface of the surface of the first substrate and the second substrate in contact with the carbon nanotube layer structure is softened or liquefied, and it is not necessary to heat the first substrate and the second substrate as a whole. It can cause damage to the substrate itself and contribute to energy conservation.

下面將結合附圖及具體實施例對本發明作進一步的詳細說明。The invention will be further described in detail below with reference to the drawings and specific embodiments.

請參閱圖1及圖2,本技術方案第一實施例提供一種粘合兩基體的方法,其具體包括以下步驟:Referring to FIG. 1 and FIG. 2, a first embodiment of the present technical solution provides a method for bonding two substrates, which specifically includes the following steps:

步驟一、提供一第一基體100,該基體具有一表面102。Step 1. A first substrate 100 is provided, the substrate having a surface 102.

所述第一基體100的形狀不限,可為規則的形狀也可為不規則的形狀。所述規則的形狀包括正方體、長方體、圓錐或圓柱等。所述第一基體100的材料為絕緣材料,優選地,所述第一基體100的熔點小於600℃。所述第一基體100可為高分子材料,所述高分子材料包括環氧樹脂、雙馬來醯亞胺樹脂、氰酸酯樹脂、聚丙烯、聚乙烯、聚乙烯醇、聚苯烯醇、聚碳酸酯或聚甲基丙烯酸甲酯等。所述第一基體100的材料也可為陶瓷或玻璃等。可以理解,所述第一基體100也可為一表面塗敷或包裹有一絕緣材料層的器件。所述器件的形狀與材料不限,可為高分子材料、金屬、陶瓷等。本實施例中,所述第一基體100為一長方體結構,其具有一表面102,其材料為聚碳酸酯。The shape of the first base 100 is not limited, and may be a regular shape or an irregular shape. The shape of the rule includes a cube, a cuboid, a cone or a cylinder, and the like. The material of the first substrate 100 is an insulating material. Preferably, the first substrate 100 has a melting point of less than 600 ° C. The first substrate 100 may be a polymer material, and the polymer material includes an epoxy resin, a bismaleimide resin, a cyanate resin, polypropylene, polyethylene, polyvinyl alcohol, polyphenylene alcohol, Polycarbonate or polymethyl methacrylate. The material of the first substrate 100 may also be ceramic or glass or the like. It can be understood that the first substrate 100 can also be a device whose surface is coated or wrapped with a layer of insulating material. The shape and material of the device are not limited, and may be a polymer material, a metal, a ceramic, or the like. In this embodiment, the first substrate 100 is a rectangular parallelepiped structure having a surface 102 made of polycarbonate.

步驟二、提供至少一奈米碳管膜,將該至少奈米碳管膜設置於該第一基體100的表面102,構成一奈米碳管層狀結構120。Step 2: providing at least one carbon nanotube film, and disposing the at least carbon nanotube film on the surface 102 of the first substrate 100 to form a carbon nanotube layer structure 120.

所述奈米碳管膜包括複數個奈米碳管,奈米碳管之間通過凡德瓦爾力緊密結合。優選地,所述奈米碳管膜中的複數個奈米碳管均勻分佈。該奈米碳管膜中的相鄰奈米碳管之間具有一定的間隙,因此該奈米碳管膜包括複數個微孔,該微孔的直徑小於10微米。具體地,該奈米碳管膜中的奈米碳管可為無序或有序排列。這裏的無序排列指奈米碳管的排列方向無規律,這裏的有序排列指至少多數奈米碳管的排列方向具有一定規律。具體地,當奈米碳管膜包括無序排列的奈米碳管時,奈米碳管相互纏繞或者各向同性排列;當奈米碳管膜包括有序排列的奈米碳管時,奈米碳管沿一個方向或者複數個方向擇優取向排列。本實施例中,所述奈米碳管膜包括複數個奈米碳管沿同一方向擇優取向排列且基本平行於奈米碳管膜表面。所述奈米碳管之間通過凡德瓦爾力首尾相連。所述奈米碳管膜的厚度為0.5奈米~100微米。本實施例中,所述奈米碳管膜為直接從一奈米碳管陣列中拉取獲得,該奈米碳管膜的製備方法請參見范守善等人於民國96年2月12日申請,於民國97年8月16日公開之公開號為200833862之專利申請“奈米碳管膜結構及其製備方法”,申請人:鴻富錦精密工業(深圳)有限公司。為節省篇幅,僅引用於此,但上述申請所有技術揭露也應視為本發明申請技術揭露的一部分。The carbon nanotube membrane comprises a plurality of carbon nanotubes, and the carbon nanotubes are tightly coupled by van der Waals force. Preferably, the plurality of carbon nanotubes in the carbon nanotube film are uniformly distributed. There is a certain gap between adjacent carbon nanotubes in the carbon nanotube film, and thus the carbon nanotube film includes a plurality of micropores having a diameter of less than 10 micrometers. Specifically, the carbon nanotubes in the carbon nanotube film may be disordered or ordered. The disordered arrangement here means that the arrangement direction of the carbon nanotubes is irregular, and the ordered arrangement here means that at least most of the arrangement of the carbon nanotubes has a certain regularity. Specifically, when the carbon nanotube film comprises a disordered arrangement of carbon nanotubes, the carbon nanotubes are entangled or isotropically arranged; when the carbon nanotube film comprises an ordered arrangement of carbon nanotubes, The carbon nanotubes are arranged in a preferred orientation in one direction or in a plurality of directions. In this embodiment, the carbon nanotube film comprises a plurality of carbon nanotubes arranged in a preferred orientation in the same direction and substantially parallel to the surface of the carbon nanotube film. The carbon nanotubes are connected end to end by Van der Waals force. The carbon nanotube film has a thickness of from 0.5 nm to 100 μm. In this embodiment, the carbon nanotube film is directly taken from an array of carbon nanotubes. For the preparation method of the carbon nanotube film, please refer to Fan Shoushan et al. on February 12, 1996. Patent application "Nano Carbon Tube Membrane Structure and Preparation Method" disclosed in the publication No. 200833862 of the Republic of China on August 16, 1997, the applicant: Hong Fu Jin Precision Industry (Shenzhen) Co., Ltd. In order to save space, only the above is cited, but all the technical disclosures of the above application are also considered as part of the technical disclosure of the present application.

所述奈米碳管膜為一自支撐結構,所謂自支撐係指奈米碳管膜無需其他基體支撐,可自支撐保持一膜的形態。因此,所述奈米碳管膜可直接鋪設於第一基體100的表面102上,並與該表面102貼合設置。可以理解,可將複數個奈米碳管膜層疊或平行無間隙鋪設。當奈米碳管膜層疊設置時,相鄰的兩層奈米碳管膜的層疊角度不限,相鄰的奈米碳管膜通過凡德瓦爾力緊密結合,從而在第一基體100的表面102構成一奈米碳管層狀結構120。The carbon nanotube film is a self-supporting structure, and the so-called self-supporting means that the carbon nanotube film can support the shape of a film without supporting other substrates. Therefore, the carbon nanotube film can be directly laid on the surface 102 of the first substrate 100 and disposed in contact with the surface 102. It will be appreciated that a plurality of carbon nanotube films may be laminated or laid in parallel without gaps. When the carbon nanotube films are stacked, the stacking angle of the adjacent two-layer carbon nanotube film is not limited, and the adjacent carbon nanotube film is tightly bonded by the van der Waals force, thereby being on the surface of the first substrate 100. 102 constitutes a carbon nanotube layered structure 120.

另外,也可預先將所述奈米碳管膜層疊設置構成一奈米碳管層狀結構120後再直接將奈米碳管層狀結構120設置於第一基體100的表面102。其具可包括以下步驟:提供一支撐結構;將至少一層奈米碳管膜設置於該支撐結構的表面形成一奈米碳管層狀結構120;將該奈米碳管層狀結構120從該支撐結構上取下,鋪設於所述第一基體100的表面102。可以理解,所述支撐結構可為一基底,也可為一框架結構。當支撐結構為一框架結構時,奈米碳管層狀結構120可部分懸空,此時可直接將懸空的奈米碳管層狀結構120直接鋪設於第一基體100的表面102上,再將該框架結構的支撐結構去除。Alternatively, the carbon nanotube film may be laminated in advance to form a carbon nanotube layer structure 120, and then the carbon nanotube layer structure 120 may be directly disposed on the surface 102 of the first substrate 100. The method may include the steps of: providing a support structure; disposing at least one layer of carbon nanotube film on the surface of the support structure to form a carbon nanotube layer structure 120; and the carbon nanotube layer structure 120 from the The support structure is removed and laid on the surface 102 of the first substrate 100. It can be understood that the support structure can be a substrate or a frame structure. When the support structure is a frame structure, the carbon nanotube layer structure 120 can be partially suspended. At this time, the suspended carbon nanotube layer structure 120 can be directly laid on the surface 102 of the first substrate 100, and then The support structure of the frame structure is removed.

步驟三、在奈米碳管層狀結構120上間隔設置兩個電極126,該兩個電極126分別與該奈米碳管層狀結構120電連接。Step 3: Two electrodes 126 are disposed on the carbon nanotube layer structure 120, and the two electrodes 126 are electrically connected to the carbon nanotube layer structure 120, respectively.

所述兩個電極126可設置於奈米碳管層狀結構120的表面,位於該奈米碳管層狀結構120的兩端。所述兩個電極126形成於所述奈米碳管層狀結構120的表面的方法包括絲網印刷法,溅射法,塗敷法,氣相沈積法等方法。優選地,當該奈米碳管層狀結構120中複數個奈米碳管有序排列時,該複數個奈米碳管的軸向方向為沿一個電極126向另一個電極126延伸。所述之兩個電極126可通過一導電粘結劑(圖未示)設置於該奈米碳管層狀結構120的表面,導電粘結劑可將電極126更好地固定於奈米碳管層狀結構120的表面上,還可使電極126與奈米碳管層狀結構120之間保持良好的電接觸。該導電粘結劑可為銀膠。所述兩個電極126由導電材料製成,其形狀不限,可為導電膜、金屬片或者金屬引線。優選地,該兩個電極126分別為一層導電膜,該導電膜的厚度為0.5奈米~100微米。該導電膜的材料可為金屬、合金、銦錫氧化物(ITO)、銻錫氧化物(ATO)、導電銀膠、導電聚合物或導電性奈米碳管等。該金屬或合金材料可為鋁、銅、鎢、鉬、金、鈦、釹、鈀、銫或其任意組合的合金。所述電極126可通過濺射、塗敷、沉積或絲網印刷等方法設置於該奈米碳管層狀結構120的表面。本實施例中,所述電極126的材料為金屬鈀膜,厚度為5微米,其通過絲網印刷方法形成於奈米碳管層狀結構120的表面。所述金屬鈀與奈米碳管具有較好的潤濕效果,有利於所述電極126與所述奈米碳管層狀結構120之間形成良好的電接觸,減少歐姆接觸電阻。The two electrodes 126 may be disposed on the surface of the carbon nanotube layer structure 120 at both ends of the carbon nanotube layer structure 120. The method of forming the two electrodes 126 on the surface of the carbon nanotube layer structure 120 includes a screen printing method, a sputtering method, a coating method, a vapor deposition method, and the like. Preferably, when a plurality of carbon nanotubes in the carbon nanotube layer structure 120 are sequentially arranged, the axial direction of the plurality of carbon nanotubes extends along one electrode 126 toward the other electrode 126. The two electrodes 126 can be disposed on the surface of the carbon nanotube layer structure 120 through a conductive adhesive (not shown), and the conductive adhesive can better fix the electrode 126 to the carbon nanotubes. On the surface of the layered structure 120, good electrical contact between the electrode 126 and the carbon nanotube layered structure 120 can also be maintained. The conductive adhesive can be a silver paste. The two electrodes 126 are made of a conductive material, and the shape thereof is not limited, and may be a conductive film, a metal piece or a metal lead. Preferably, the two electrodes 126 are respectively a conductive film, and the conductive film has a thickness of 0.5 nm to 100 μm. The material of the conductive film may be metal, alloy, indium tin oxide (ITO), antimony tin oxide (ATO), conductive silver paste, conductive polymer or conductive carbon nanotube. The metal or alloy material can be an alloy of aluminum, copper, tungsten, molybdenum, gold, titanium, rhodium, palladium, iridium or any combination thereof. The electrode 126 may be disposed on the surface of the carbon nanotube layer structure 120 by sputtering, coating, deposition, or screen printing. In this embodiment, the material of the electrode 126 is a metal palladium film having a thickness of 5 μm, which is formed on the surface of the carbon nanotube layer structure 120 by a screen printing method. The metal palladium has a better wetting effect with the carbon nanotubes, which facilitates good electrical contact between the electrode 126 and the carbon nanotube layer structure 120, and reduces ohmic contact resistance.

另外,可以理解,所述電極126設置的作用為向奈米碳管層狀結構120施加電壓,因此,所述電極126為可選擇結構,任何可向奈米碳管層狀結構120施加電壓的結構與方式均在本發明的保護範圍內。In addition, it can be understood that the electrode 126 is disposed to apply a voltage to the carbon nanotube layer structure 120. Therefore, the electrode 126 is an optional structure, and any voltage can be applied to the carbon nanotube layer structure 120. The structure and manner are all within the scope of the present invention.

步驟四、提供一第二基體200,將該第二基體200覆蓋於該奈米碳管層狀結構120設置,使該奈米碳管層狀結構120設置於第一基體100與第二基體200之間。Step 4: providing a second substrate 200, the second substrate 200 is disposed on the carbon nanotube layer structure 120, and the carbon nanotube layer structure 120 is disposed on the first substrate 100 and the second substrate 200. between.

所述第二基體200所的形狀和材料與第一基體100的形狀和材料相同。可以理解,在具體的實施例中,第二基體200的形狀可與第一基體100的形狀相同,也可不同;第二基體200的材料可與第一基體100的材料相同,也可不同。本實施例中,所述第二基體200為一板狀結構的聚碳酸酯,其體積小於該第一基體100的體積,其具有一表面202。設置於第一基體100與第二基體200之間的奈米碳管層狀結構分別與所述第一基體100的表面102及第二基體200的表面202接觸。The shape and material of the second substrate 200 are the same as those of the first substrate 100. It can be understood that, in a specific embodiment, the shape of the second substrate 200 may be the same as or different from the shape of the first substrate 100; the material of the second substrate 200 may be the same as or different from the material of the first substrate 100. In this embodiment, the second substrate 200 is a plate-like polycarbonate having a volume smaller than the volume of the first substrate 100 and having a surface 202. The carbon nanotube layered structure disposed between the first substrate 100 and the second substrate 200 is in contact with the surface 102 of the first substrate 100 and the surface 202 of the second substrate 200, respectively.

步驟五、施加一定電壓於該兩個電極126,使該奈米碳管層狀結構120升至一定溫度,使所述第一基體100和第二基體200與該奈米碳管層狀結構120接觸的部分軟化或液化。Step 5: Apply a certain voltage to the two electrodes 126 to raise the carbon nanotube layer structure 120 to a certain temperature, so that the first substrate 100 and the second substrate 200 and the carbon nanotube layer structure 120 The contacted parts soften or liquefy.

在兩個電極126之間施加的電壓的大小由所述第一基體100和第二基體200決定。該電壓和奈米碳管層狀結構120的電阻也有關,奈米碳管層狀結構120的電阻越小,在升高到相同的溫度的情況下,所需要的電壓越小。奈米碳管層狀結構120的電阻的大小與該奈米碳管層狀結構120所包括的層疊設置的奈米碳管膜的層數有關,奈米碳管膜的層數越多,其電阻越小,反之則越大。優選地,所述電壓為1伏~10伏。在兩個電極126之間施加電壓後,奈米碳管層狀結構120中有電流流過,由於焦耳熱的作用奈米碳管層狀結構120的溫度升高。導致與奈米碳管層狀結構120接觸的第一基體100的表面102與第二基體200的表面202的溫度逐漸升高。當第一基體100的表面102和第二基體200的表面202達到一定溫度之後,開始軟化或熔化。此時,停止施加電壓。本實施例中,第一基體100和第二基體200的材料均為聚碳酸酯,聚碳酸酯的熔點為220℃~230℃,因此當奈米碳管層狀結構120的溫度達到220℃或略高於聚碳酸酯的熔點時,停止在奈米碳管層狀結構120的兩端施加電壓。可以理解,也可使該奈米碳管層狀結構120保持該溫度一段時間。The magnitude of the voltage applied between the two electrodes 126 is determined by the first substrate 100 and the second substrate 200. This voltage is also related to the electrical resistance of the carbon nanotube layered structure 120. The smaller the electrical resistance of the carbon nanotube layered structure 120, the smaller the voltage required when it is raised to the same temperature. The magnitude of the electric resistance of the carbon nanotube layered structure 120 is related to the number of layers of the laminated carbon nanotube film included in the carbon nanotube layer structure 120. The more the number of layers of the carbon nanotube film, the more The smaller the resistance, the greater the opposite. Preferably, the voltage is between 1 volt and 10 volts. After a voltage is applied between the two electrodes 126, a current flows through the carbon nanotube layered structure 120, and the temperature of the carbon nanotube layered structure 120 rises due to the Joule heat. The temperature of the surface 102 of the first substrate 100 and the surface 202 of the second substrate 200 that are in contact with the carbon nanotube layered structure 120 is gradually increased. After the surface 102 of the first substrate 100 and the surface 202 of the second substrate 200 reach a certain temperature, softening or melting begins. At this time, the application of the voltage is stopped. In this embodiment, the materials of the first substrate 100 and the second substrate 200 are both polycarbonate, and the melting point of the polycarbonate is 220 ° C ~ 230 ° C, so when the temperature of the carbon nanotube layer structure 120 reaches 220 ° C or When it is slightly higher than the melting point of the polycarbonate, the application of a voltage across the carbon nanotube layered structure 120 is stopped. It will be appreciated that the carbon nanotube layered structure 120 can also be maintained at this temperature for a period of time.

可以理解,上述步驟也可在真空環境下或有保護氣體存在的環境下進行。所述真空環境的真空度可為10-2 ~10-6 帕。所述保護氣體包括氮氣和惰性氣體。由於奈米碳管層狀結構120中的奈米碳管在600℃左右時容易被氧化破壞,因此,在真空環境或保護氣體存在的情況下,可保護奈米碳管層狀結構120在高溫時不被破壞,奈米碳管層狀結構120的溫度可達到2000℃左右,可用於粘合熔點較高的基體。It will be understood that the above steps can also be carried out in a vacuum environment or in the presence of a protective gas. The vacuum environment may have a vacuum of 10 -2 to 10 -6 Pa. The shielding gas includes nitrogen and an inert gas. Since the carbon nanotubes in the carbon nanotube layer structure 120 are easily oxidized and destroyed at about 600 ° C, the carbon nanotube layer structure 120 can be protected at a high temperature in the presence of a vacuum atmosphere or a shielding gas. When it is not destroyed, the temperature of the carbon nanotube layer structure 120 can reach about 2000 ° C, and can be used to bond a substrate having a higher melting point.

步驟六、施加一定壓力於第一基體100和第二基體200以粘合該第一基體100與第二基體200。Step 6. Apply a certain pressure to the first substrate 100 and the second substrate 200 to bond the first substrate 100 and the second substrate 200.

由於第一基體100的表面102和第二基體200的表面202已開始軟化或熔化,可施加一定的外加壓力於第一基體100和第二基體200之間,使第一基體100和第二基體200固定於一體。由於該奈米碳管層狀結構120包括複數個微孔,在施壓過程中,軟化或熔化的第一基體100的表面102和第二基體200的表面202可滲透到奈米碳管層狀結構120中,並透過該複數個微孔相互粘合。由於奈米碳管層狀結構120的厚度較小,第一基體100和第二基體200之間不會存在縫隙。Since the surface 102 of the first substrate 100 and the surface 202 of the second substrate 200 have begun to soften or melt, a certain applied pressure can be applied between the first substrate 100 and the second substrate 200 to make the first substrate 100 and the second substrate 200 is fixed in one. Since the carbon nanotube layered structure 120 includes a plurality of micropores, the surface 102 of the softened or melted first substrate 100 and the surface 202 of the second substrate 200 are permeable to the carbon nanotube layer during the pressing process. The structure 120 is bonded to each other through the plurality of micropores. Since the thickness of the carbon nanotube layered structure 120 is small, there is no gap between the first substrate 100 and the second substrate 200.

可以理解,可選擇地,在第一基體100和第二基體200固定於一體之後,可進一步將奈米碳管層狀結構120上的兩個電極126去除。當奈米碳管層狀結構120的面積大於第一基體100的表面102或第二基體200的表面202時,該至少兩個電極126可暴露出來,可直接將該兩個電極126揭除。另外,也可通過剪切上述粘合後的結構將該兩個電極126除去。It can be understood that, optionally, after the first substrate 100 and the second substrate 200 are integrally fixed, the two electrodes 126 on the carbon nanotube layer structure 120 can be further removed. When the area of the carbon nanotube layered structure 120 is larger than the surface 102 of the first substrate 100 or the surface 202 of the second substrate 200, the at least two electrodes 126 may be exposed, and the two electrodes 126 may be directly removed. Alternatively, the two electrodes 126 may be removed by shearing the bonded structure.

可以理解,步驟五和步驟六可同時進行,即在對兩個電極126施加電壓的同時,對第一基體100和第二基體200施加壓力。It can be understood that steps 5 and 6 can be performed simultaneously, that is, pressure is applied to the first substrate 100 and the second substrate 200 while applying voltage to the two electrodes 126.

請參見圖3和圖4,該奈米碳管層狀結構120可將第一基體100和第二基體200牢固的粘合於一體,且在第一基體100和第二基體200的粘結處不會形成縫隙。而且,第一基體100與第二基體200僅在與所述奈米碳管層狀結構120接觸的表面部分熔化,第一基體100與第二基體200其他部分的形狀與性質不受影響。Referring to FIGS. 3 and 4, the carbon nanotube layer structure 120 can firmly bond the first substrate 100 and the second substrate 200 together, and at the junction of the first substrate 100 and the second substrate 200. There will be no gaps. Moreover, the first base body 100 and the second base body 200 are only partially melted on the surface in contact with the carbon nanotube layer structure 120, and the shapes and properties of the first base body 100 and other portions of the second base body 200 are not affected.

本發明所提供的粘合兩基體的方法具有以下優點:其一,本發明通過奈米碳管層狀結構加熱第一基體和第二基體與該奈米碳管層狀結構接觸的表面,使第一基體和第二基體的表面熔化或液化,無需將第一基體和第二基體整體加熱,不會對基體本身造成傷害。其二,當基體與低熔點的器件相連或基體內部包括低熔點的器件時,本發明所提供的粘合兩基體的方法無需對基體整體加熱,因此不會導致該器件熔化,從而不會破壞該器件的形狀和性質,也即本發明所提供的粘合兩基體的方法對基體的限制較少,有更廣應用範圍;其三,由於本發明所提供的粘合兩基體的方法僅對基體需要粘合的表面進行加熱,無需加熱整個基體,因此需要的熱量較少,有利於節約能源;其四,奈米碳管層狀結構的厚度較小,可達到奈米級,使用該奈米碳管層狀結構粘合兩基體不會在兩基體之間形成縫隙,因此,本發明所提供的粘合兩基體的方法使兩基體結合牢固,使兩基體粘合於一體之後美觀大方;其五,奈米碳管層狀結構具有較好的柔韌性,使用該奈米碳管層狀結構粘合兩基體後,不會對粘合後基體的柔韌性造成影響;其六,本發明通過奈米碳管層狀結構加熱第一基體和第二基體與該奈米碳管層狀結構接觸的表面,使第一基體和第二基體的表面熔化或液化後粘合的方法,簡單可控,適用於工業化應用。The method for bonding two substrates provided by the present invention has the following advantages: First, the present invention heats the surface of the first substrate and the second substrate in contact with the layer structure of the carbon nanotube by the carbon nanotube layer structure. The surfaces of the first substrate and the second substrate are melted or liquefied, and it is not necessary to heat the first substrate and the second substrate as a whole without causing damage to the substrate itself. Secondly, when the substrate is connected to the low melting point device or the inside of the substrate includes a low melting point device, the method for bonding the two substrates provided by the present invention does not need to heat the entire substrate, so that the device does not melt, and thus does not Destroying the shape and properties of the device, that is, the method for bonding two substrates provided by the present invention has less restrictions on the substrate and has a wider range of applications; and third, because the method for bonding two substrates provided by the present invention is only Heating the surface of the substrate to be bonded without heating the entire substrate, so less heat is needed, which is conducive to energy conservation. Fourth, the thickness of the carbon nanotube layered structure is small, and can reach the nanometer level. The carbon nanotube layered structure bonds the two substrates without forming a gap between the two substrates. Therefore, the method for bonding the two substrates provided by the present invention makes the two substrates bond firmly, and the two substrates are bonded to each other and are beautiful and elegant. Fifth, the carbon nanotube layered structure has good flexibility. After bonding the two substrates with the carbon nanotube layered structure, it does not affect the flexibility of the bonded matrix; The present invention heats the surface of the first substrate and the second substrate by melting or liquefying the surface of the first substrate and the second substrate by heating the surface of the first substrate and the second substrate in contact with the layer of the carbon nanotube layer by a carbon nanotube layer structure. Simple and controllable for industrial applications.

綜上所述,本發明確已符合發明專利之要件,遂依法提出專利申請。惟,以上所述者僅為本發明之較佳實施例,自不能以此限制本案之申請專利範圍。舉凡習知本案技藝之人士援依本發明之精神所作之等效修飾或變化,皆應涵蓋於以下申請專利範圍內。In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by those skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.

100‧‧‧第一基體100‧‧‧First substrate

102‧‧‧第一基體表面102‧‧‧First substrate surface

120‧‧‧奈米碳管層狀結構120‧‧‧Nanocarbon tube layered structure

126‧‧‧電極126‧‧‧electrode

200‧‧‧第二基體200‧‧‧Second substrate

202‧‧‧第二基體表面202‧‧‧Second substrate surface

圖1為本技術方案第一實施例所提供的粘合兩基體的方法的流程圖。FIG. 1 is a flow chart of a method for bonding two substrates according to a first embodiment of the present technical solution.

圖2為本技術方案第一實施例所提供的粘合兩基體的方法的過程的示意圖。2 is a schematic view showing the process of the method of bonding two substrates provided by the first embodiment of the present technical solution.

圖3為本技術方案第一實施例中將兩基體粘合於一體之後的粘合處的掃描電鏡照片。Figure 3 is a scanning electron micrograph of the bond after the two substrates are bonded together in the first embodiment of the present technical solution.

圖4為圖3中將兩基體粘合於一體之後的粘合處的放大後的掃描電鏡照片。Figure 4 is an enlarged scanning electron micrograph of the bond after the two substrates are bonded together in Figure 3.

100‧‧‧第一基體 100‧‧‧First substrate

102‧‧‧第一基體表面 102‧‧‧First substrate surface

120‧‧‧奈米碳管層狀結構 120‧‧‧Nanocarbon tube layered structure

126‧‧‧電極 126‧‧‧electrode

200‧‧‧第二基體 200‧‧‧Second substrate

202‧‧‧第二基體表面 202‧‧‧Second substrate surface

Claims (20)

一種粘合兩基體的方法,其包括以下步驟:
提供一第一基體,該第一基體具有一表面;
提供至少一奈米碳管膜,並將該至少一奈米碳管膜鋪設於第一基體的表面,構成一奈米碳管層狀結構;
在奈米碳管層狀結構上間隔地設置兩個電極,該兩個電極分別與所述奈米碳管層狀結構電連接;
提供一第二基體,將該第二基體覆蓋於該奈米碳管層狀結構設置,使該奈米碳管層狀結構位於第一基體和第二基體之間;
施加一定電壓於該兩個電極,使該奈米碳管層狀結構升溫以使第一基體和第二基體與該奈米碳管層狀結構接觸的部分軟化或液化;
施加壓力於該第一基體和第二基體以粘合所述第一基體與第二基體。
A method of bonding two substrates, comprising the steps of:
Providing a first substrate having a surface;
Providing at least one carbon nanotube film, and laying the at least one carbon nanotube film on the surface of the first substrate to form a carbon nanotube layer structure;
Two electrodes are disposed at intervals on the carbon nanotube layer structure, and the two electrodes are respectively electrically connected to the carbon nanotube layer structure;
Providing a second substrate, the second substrate is disposed on the carbon nanotube layer structure, such that the carbon nanotube layer structure is located between the first substrate and the second substrate;
Applying a certain voltage to the two electrodes, heating the carbon nanotube layer structure to soften or liquefy the portion of the first substrate and the second substrate in contact with the carbon nanotube layer structure;
Pressure is applied to the first substrate and the second substrate to bond the first substrate and the second substrate.
如申請專利範圍第1項所述之粘合兩基體的方法,其中,所述第一基體及第二基體的材料為絕緣材料。The method of bonding two substrates according to claim 1, wherein the material of the first substrate and the second substrate is an insulating material. 如申請專利範圍第1項所述之粘合兩基體的方法,其中,所述第一基體及第二基體的材料的熔點低於600℃。The method of bonding two substrates according to claim 1, wherein the materials of the first substrate and the second substrate have a melting point of less than 600 °C. 如申請專利範圍第1項所述之粘合兩基體的方法,其中,所述第一基體及第二基體為一表面塗敷或包裹有一絕緣材料層的器件。The method of bonding two substrates according to claim 1, wherein the first substrate and the second substrate are devices having a surface coated or wrapped with an insulating material layer. 如申請專利範圍第1項所述之粘合兩基體的方法,其中,所述奈米碳管層狀結構的厚度為0.5奈米~100微米。The method of bonding two substrates according to claim 1, wherein the carbon nanotube layered structure has a thickness of from 0.5 nm to 100 μm. 如申請專利範圍第1項所述之粘合兩基體的方法,其中,所述該奈米碳管膜包括複數個奈米碳管通過凡德瓦爾力相互連接。The method of bonding two substrates according to claim 1, wherein the carbon nanotube film comprises a plurality of carbon nanotubes connected to each other by a van der Waals force. 如申請專利範圍第6項所述之粘合兩基體的方法,其中,所述奈米碳管膜包括複數個奈米碳管,該複數個奈米碳管基本相互平行且基本平行於奈米碳管膜表面。The method of bonding two substrates according to claim 6, wherein the carbon nanotube film comprises a plurality of carbon nanotubes, the plurality of carbon nanotubes being substantially parallel to each other and substantially parallel to the nanometer. Carbon film surface. 如申請專利範圍第7項所述之粘合兩基體的方法,其中,所述奈米碳管膜中的奈米碳管通過凡德瓦爾力首尾相連,且基本沿同一方向擇優取向排列。The method of bonding two substrates according to claim 7, wherein the carbon nanotubes in the carbon nanotube film are connected end to end by van der Waals force and are arranged substantially in the same direction. 如申請專利範圍第1項所述之粘合兩基體的方法,其中,所述將奈米碳管膜設置在第一基體表面的方法包括將複數個奈米碳管膜層疊鋪設或平行無間隙鋪設於第一基體表面。The method of bonding two substrates according to claim 1, wherein the method of disposing the carbon nanotube film on the surface of the first substrate comprises laminating a plurality of carbon nanotube films or having no gaps in parallel. Laid on the surface of the first substrate. 如申請專利範圍第1項所述之粘合兩基體的方法,其中,所述在第一基體表面形成奈米碳管層狀結構的方法包括以下步驟:提供一支撐結構;將至少一層奈米碳管膜設置於該支撐結構的表面形成一奈米碳管層狀結構;將該奈米碳管層狀結構從該支撐結構上取下,鋪設於所述第一基體的表面。The method of bonding two substrates according to claim 1, wherein the method of forming a carbon nanotube layer structure on a surface of the first substrate comprises the steps of: providing a support structure; and at least one layer of nano The carbon tube film is disposed on the surface of the support structure to form a carbon nanotube layer structure; the carbon nanotube layer structure is removed from the support structure and laid on the surface of the first substrate. 如申請專利範圍第1項所述之粘合兩基體的方法,其中,所述奈米碳管層狀結構的兩個相對的表面分別與第一基體和第二基體接觸。The method of bonding two substrates according to claim 1, wherein the two opposite surfaces of the carbon nanotube layer structure are in contact with the first substrate and the second substrate, respectively. 如申請專利範圍第1項所述之粘合兩基體的方法,其中,所述形成電極的方法包括絲網印刷法,溅射法,塗敷法,氣相沈積法。The method of bonding two substrates as described in claim 1, wherein the method of forming an electrode comprises a screen printing method, a sputtering method, a coating method, and a vapor deposition method. 如申請專利範圍第1項所述之粘合兩基體的方法,其中,所述施加一定電壓於該奈米碳管層狀結構的步驟,在10-2 ~10-6 帕的真空環境或保護氣體存在的情況下進行。The method of bonding two substrates according to claim 1, wherein the step of applying a certain voltage to the carbon nanotube layer structure is in a vacuum environment of 10 -2 to 10 -6 Pa or protection. It is carried out in the presence of a gas. 如申請專利範圍第1項所述之粘合兩基體的方法,其中,所述奈米碳管層狀結構包括複數個微孔,微孔的直徑小於10微米。The method of bonding two substrates according to claim 1, wherein the carbon nanotube layered structure comprises a plurality of micropores having a diameter of less than 10 micrometers. 如申請專利範圍第14項所述之粘合兩基體的方法,其中,在施加壓力的過程中,所述第一基體和第二基體軟化或液化的部分滲透到該奈米碳管層狀結構中,並透過該奈米碳管層狀結構的微孔相互接觸並粘合於一體。The method of bonding two substrates according to claim 14, wherein the softened or liquefied portion of the first substrate and the second substrate penetrates into the carbon nanotube layered structure during pressure application. And passing through the micropores of the carbon nanotube layered structure and contacting each other. 一種粘合兩基體的方法,其包括以下步驟:
提供兩基體,該兩基體分別具有一表面;
提供一奈米碳管層狀結構;
將上述兩基體貼和設置,並將上述奈米碳管層狀結構設置在兩基體的表面之間;
施加一電壓於奈米碳管層狀結構,使該奈米碳管層狀結構升溫以使兩基體的表面軟化或液化;
施加壓力於兩基體之間以粘合所述第一基體與第二基體。
A method of bonding two substrates, comprising the steps of:
Providing two substrates, each of which has a surface;
Providing a carbon nanotube layered structure;
Laminating and arranging the above two substrates, and placing the above-mentioned carbon nanotube layer structure between the surfaces of the two substrates;
Applying a voltage to the carbon nanotube layered structure, heating the carbon nanotube layer structure to soften or liquefy the surface of the two substrates;
Pressure is applied between the two substrates to bond the first substrate and the second substrate.
如申請專利範圍第16項所述之粘合兩基體的方法,其中,所述第一基體及第二基體的材料為絕緣材料。The method of bonding two substrates according to claim 16, wherein the material of the first substrate and the second substrate is an insulating material. 如申請專利範圍第16項所述之粘合兩基體的方法,其中,所述第一基體及第二基體的材料的熔點低於600℃。The method of bonding two substrates according to claim 16, wherein the materials of the first substrate and the second substrate have a melting point of less than 600 °C. 如申請專利範圍第16項所述之粘合兩基體的方法,其中,所述第一基體及第二基體為一表面塗敷或包裹有一絕緣材料層的器件。The method of bonding two substrates according to claim 16, wherein the first substrate and the second substrate are devices having a surface coated or wrapped with an insulating material layer. 如申請專利範圍第16項所述之粘合兩基體的方法,其中,所述施加一定電壓於該奈米碳管層狀結構的步驟,在10-2 ~10-6 帕的真空環境或保護氣體存在的情況下進行。The method for bonding two substrates according to claim 16, wherein the step of applying a certain voltage to the carbon nanotube layer structure is in a vacuum environment of 10 -2 to 10 -6 Pa or protection. It is carried out in the presence of a gas.
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TWI253094B (en) * 2004-06-08 2006-04-11 Teco Nanotech Co Ltd Oriented sintering method of carbon nano-tube cathode for the field-emission display
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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