TWI390603B - 用於磊晶薄膜形成的方法與裝置 - Google Patents
用於磊晶薄膜形成的方法與裝置 Download PDFInfo
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- TWI390603B TWI390603B TW095136765A TW95136765A TWI390603B TW I390603 B TWI390603 B TW I390603B TW 095136765 A TW095136765 A TW 095136765A TW 95136765 A TW95136765 A TW 95136765A TW I390603 B TWI390603 B TW I390603B
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- Prior art keywords
- substrate
- epitaxial
- plasma
- epitaxial chamber
- chamber
- Prior art date
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- 238000000034 method Methods 0.000 title claims description 44
- 230000015572 biosynthetic process Effects 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims description 131
- 239000004065 semiconductor Substances 0.000 claims description 59
- 238000004519 manufacturing process Methods 0.000 claims description 53
- 239000000463 material Substances 0.000 claims description 28
- 238000010438 heat treatment Methods 0.000 claims description 20
- 238000004140 cleaning Methods 0.000 claims description 9
- 230000005284 excitation Effects 0.000 claims description 8
- 238000005389 semiconductor device fabrication Methods 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims 3
- 238000010168 coupling process Methods 0.000 claims 3
- 238000005859 coupling reaction Methods 0.000 claims 3
- 230000005611 electricity Effects 0.000 claims 1
- 239000002002 slurry Substances 0.000 claims 1
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 21
- 239000007789 gas Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 11
- 150000001875 compounds Chemical class 0.000 description 9
- 239000002019 doping agent Substances 0.000 description 9
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 7
- 239000000460 chlorine Substances 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 5
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 5
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 239000000356 contaminant Substances 0.000 description 5
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 5
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 5
- 229910052707 ruthenium Inorganic materials 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 4
- -1 organics Inorganic materials 0.000 description 4
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 3
- GTJOHISYCKPIMT-UHFFFAOYSA-N 2-methylundecane Chemical compound CCCCCCCCCC(C)C GTJOHISYCKPIMT-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910000085 borane Inorganic materials 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical compound CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- RSJKGSCJYJTIGS-UHFFFAOYSA-N undecane Chemical compound CCCCCCCCCCC RSJKGSCJYJTIGS-UHFFFAOYSA-N 0.000 description 3
- IXADHCVQNVXURI-UHFFFAOYSA-N 1,1-dichlorodecane Chemical compound CCCCCCCCCC(Cl)Cl IXADHCVQNVXURI-UHFFFAOYSA-N 0.000 description 2
- UYVWNPAMKCDKRB-UHFFFAOYSA-N 1,2,4,5-tetraoxane Chemical compound C1OOCOO1 UYVWNPAMKCDKRB-UHFFFAOYSA-N 0.000 description 2
- BGJSXRVXTHVRSN-UHFFFAOYSA-N 1,3,5-trioxane Chemical compound C1OCOCO1 BGJSXRVXTHVRSN-UHFFFAOYSA-N 0.000 description 2
- YTPFRRRNIYVFFE-UHFFFAOYSA-N 2,2,3,3,5,5-hexamethyl-1,4-dioxane Chemical compound CC1(C)COC(C)(C)C(C)(C)O1 YTPFRRRNIYVFFE-UHFFFAOYSA-N 0.000 description 2
- AWBIJARKDOFDAN-UHFFFAOYSA-N 2,5-dimethyl-1,4-dioxane Chemical compound CC1COC(C)CO1 AWBIJARKDOFDAN-UHFFFAOYSA-N 0.000 description 2
- IRTCJFCIQKNFPP-UHFFFAOYSA-N 2-methyl-1,4-dioxane Chemical compound CC1COCCO1 IRTCJFCIQKNFPP-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- KDKYADYSIPSCCQ-UHFFFAOYSA-N but-1-yne Chemical compound CCC#C KDKYADYSIPSCCQ-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- DIOQZVSQGTUSAI-NJFSPNSNSA-N decane Chemical class CCCCCCCCC[14CH3] DIOQZVSQGTUSAI-NJFSPNSNSA-N 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- YWWDBCBWQNCYNR-UHFFFAOYSA-N trimethylphosphine Chemical compound CP(C)C YWWDBCBWQNCYNR-UHFFFAOYSA-N 0.000 description 2
- KHPNGCXABLTQFJ-UHFFFAOYSA-N 1,1,1-trichlorodecane Chemical compound CCCCCCCCCC(Cl)(Cl)Cl KHPNGCXABLTQFJ-UHFFFAOYSA-N 0.000 description 1
- YMEKHGLPEFBQCR-UHFFFAOYSA-N 2,2,3,3,5,5-hexachloro-1,4-dioxane Chemical compound ClC1(OC(C(OC1)(Cl)Cl)(Cl)Cl)Cl YMEKHGLPEFBQCR-UHFFFAOYSA-N 0.000 description 1
- IZLMCTIPVFRLCQ-UHFFFAOYSA-N 2,2,3,3-tetrachlorooxane Chemical compound ClC1(Cl)CCCOC1(Cl)Cl IZLMCTIPVFRLCQ-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical group FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical class [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 150000001345 alkine derivatives Chemical class 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 150000001785 cerium compounds Chemical class 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- OWQWEJKPOUNPPG-UHFFFAOYSA-M chloro(dimethyl)gallane Chemical compound C[Ga](C)Cl OWQWEJKPOUNPPG-UHFFFAOYSA-M 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- VZZJVOCVAZHETD-UHFFFAOYSA-N diethylphosphane Chemical compound CCPCC VZZJVOCVAZHETD-UHFFFAOYSA-N 0.000 description 1
- JGHYBJVUQGTEEB-UHFFFAOYSA-M dimethylalumanylium;chloride Chemical compound C[Al](C)Cl JGHYBJVUQGTEEB-UHFFFAOYSA-M 0.000 description 1
- GMLFPSKPTROTFV-UHFFFAOYSA-N dimethylborane Chemical compound CBC GMLFPSKPTROTFV-UHFFFAOYSA-N 0.000 description 1
- YOTZYFSGUCFUKA-UHFFFAOYSA-N dimethylphosphine Chemical compound CPC YOTZYFSGUCFUKA-UHFFFAOYSA-N 0.000 description 1
- AIGRXSNSLVJMEA-FQEVSTJZSA-N ethoxy-(4-nitrophenoxy)-phenyl-sulfanylidene-$l^{5}-phosphane Chemical compound O([P@@](=S)(OCC)C=1C=CC=CC=1)C1=CC=C([N+]([O-])=O)C=C1 AIGRXSNSLVJMEA-FQEVSTJZSA-N 0.000 description 1
- BOUBUFOFBHNEAP-UHFFFAOYSA-N ethylborane Chemical compound BCC BOUBUFOFBHNEAP-UHFFFAOYSA-N 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 239000011737 fluorine Chemical group 0.000 description 1
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- JOTBHEPHROWQDJ-UHFFFAOYSA-N methylgallium Chemical compound [Ga]C JOTBHEPHROWQDJ-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 1
- LALRXNPLTWZJIJ-UHFFFAOYSA-N triethylborane Chemical compound CCB(CC)CC LALRXNPLTWZJIJ-UHFFFAOYSA-N 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- RXJKFRMDXUJTEX-UHFFFAOYSA-N triethylphosphine Chemical compound CCP(CC)CC RXJKFRMDXUJTEX-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- WXRGABKACDFXMG-UHFFFAOYSA-N trimethylborane Chemical compound CB(C)C WXRGABKACDFXMG-UHFFFAOYSA-N 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
- C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/025—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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Description
本發明大體上係有關於半導體元件製造,且特別係有關於用於磊晶薄膜形成的方法與裝置。
一些傳統上在基材上形成磊晶層次之方法係將污染物導引至形成有此磊晶層次之基材表面。再者,溫度(其係關聯於一些傳統上在基材上形成磊晶層次之方法)對於形成在基材上之半導體元件是有害的。因此,所期望的是能夠改善用以形成磊晶層次之方法與裝置。
在本發明之第一態樣中,本發明提供第一系統以用於半導體元件製造。此第一系統包含::(1)一磊晶腔室,其適用以在一基材之表面上形成一磊晶層次;以及(2)一電漿產生器,其耦接於該磊晶腔室,且適用以導引電漿至該磊晶腔室。
在本發明之第二態樣中,本發明提供第一方法以用於半導體元件製造。此第一方法包含下列步驟:(1)提供一半導體元件製造系統,其具有:(a)一磊晶腔室,其適用以在一基材之表面上形成一磊晶材料層次;以及(b)一電漿產生器,其耦接於該磊晶腔室,且適用以導引電漿至該磊晶腔室;以及(2)在該基材上形成該磊晶材料層次之前利用該半導體元件製造系統以清潔該基材之表面。
在本發明之第三態樣中,本發明提供第二方法以用於半導體元件製造。此第二方法包含下列步驟:(1)提供一半導體元件製造系統,其具有:(a)一磊晶腔室,其適用以在一基材之表面上形成一磊晶材料層次;以及(b)一電漿產生器,其耦接於該磊晶腔室,且適用以導引電漿至該磊晶腔室;以及(2)利用該半導體元件製造系統以在該基材上形成該磊晶材料層次。本發明亦根據這些與其他態樣而提供許多其他態樣。
本發明之其他特徵與態樣將可以由以下詳細說明、隨附申請專利範圍與附圖而變為明顯。
本發明係提供用以製造半導體元件之方法與裝置。更詳細地說,本發明係提供一半導體元件製造系統,其包括一磊晶腔室,該磊晶腔室耦接於一電漿產生器,該電漿產生器適用以導引電漿至磊晶腔室。並且,本發明係提供用以在基材上形成磊晶層次之前清潔基材表面之方法與裝置。此外,本發明係提供用以在基材上形成磊晶層次之方法與裝置。
第1圖為根據本發明之一實施例的一半導體元件製造系統101之方塊圖,半導體元件製造系統101包括一電漿產生器103,電漿產生器103耦接於一磊晶腔室105。電漿產生器103適用以導引電漿至磊晶腔室105。例如,電漿產生器103可以包括且/或耦接於一微波凹腔(未示出)。再者,電漿產生器103可以包括且/或耦接於一微波產生器(未示出),其中該微波產生器耦接於該微波凹腔。電漿產生器103自氣體供應107接收氣體(氫等等),且以該氣體為基礎產生電漿109。電漿109自電漿產生器103被輸出進入磊晶腔室105。
在一些實施例中,電漿產生器103可以為一遠端電漿產生器或感應地耦接於磊晶腔室105,雖然也可以使用其他組態。電漿產生器103適用以產生一包含離子化H2
(例如H2 +
)物種之電漿,雖然可以利用包含不同的物種、離子與/或自由基之電漿。例如,在磊晶層次形成期間所使用之沈積氣體(例如來源氣體、蝕刻劑氣體、摻雜物氣體等等)也能自電漿產生器103被供應(如同下述),或以其他方式被供應至磊晶腔室105。在一或多個實施例中,電漿產生器103適用以產生一大區域而具有均勻密度之電漿,這能使得在後續處理期間形成一實質上均勻的磊晶層次。
電漿產生器103類似於美國專利案號US6,450,116之反應腔室,該件專利係發證於西元2002年9月17日而標題為“Apparatus For Exposing a Substrate to Plasma Radicals”,其在此被併入本文以做為參考。然而,可以使用不同組態的電漿產生器103。
磊晶腔室105適用以在腔室內一基材(未示出)上形成磊晶層次之前清潔此基材之表面。例如,磊晶腔室105可以將基材(與被導引至腔室105之電漿109)暴露於各種製程參數(例如溫度、壓力等等),譬如如同以下關於第6圖之描述,使得基材表面被清潔。再者,磊晶腔室105可以適用以在基材上形成一磊晶層次(譬如如同以下關於第7圖之描述)。磊晶腔室105藉由一排氣設備或幫浦111將不希望的氣體與/或副產物輸出。
磊晶腔室105包括一電漿激發設備113(例如一或多個線圈),其位於腔室105之一真空部分115外面(例如除了電漿產生器103之外,或用以取代電漿產生器103)。電漿激發設備113由金屬或另一適當的材料形成,且腔室105之真空部分115包含石英或另一適當的材料。將電漿激發設備113之部件(例如金屬部件)置放在腔室105之真空部分115外面可以避免該些部件污染腔室與/或任何以腔室105進行處理之基材。
請參閱第2-3圖,以下將描述半導體元件製造系統101內之第一示範性磊晶腔室105;且參閱第4-5圖,以下將描述半導體元件製造系統101內之第二示範性磊晶腔室105。
第2圖為第1圖之根據本發明一實施例的半導體元件製造系統101的方塊圖,半導體元件製造系統101包括一高溫磊晶腔室201。參閱第2圖,高溫磊晶腔室201包括一基材固持件203(例如晶座(susceptor)),其適用以支撐基材205。高溫磊晶腔室201適用以接收自電漿產生器103輸出之電漿,並且將電漿與基材205暴露於一希望的溫度,從而使基材205之表面被清潔。
第3圖為第2圖之半導體元件製造系統101的方塊圖,其中高溫磊晶腔室201包括至少一個位在基材固持件203下方之下方加熱模組301(例如紅外線燈或燈陣列或另一輻射的熱源,僅顯示一個),以及至少一個位在基材固持件203上方之上方加熱模組303(例如紅外線燈或燈陣列或另一輻射的熱源,僅顯示一個)。高溫磊晶腔室201係利用下方加熱模組301與上方加熱模組303來加熱基材205至希望的溫度,同時將基材暴露於一清潔物種(例如一氫電漿)。在一些實施例中,低於約700℃(較佳為介於約400℃與600℃之間)的基材溫度可以被利用以清潔基材205之表面(雖然可以使用一更大或更小且/或不同的溫度範圍)。使用離子化氫物種可以降低需要移除氧、有機物、鹵素與其他來自基材205的污染物之溫度。之後,一磊晶層次係被形成在基材之清潔表面上(如以下所述)。
在一些實施例中,高溫磊晶腔室201小於美國專利案號US5,108,792之熱反應器,該件專利係發證於西元1992年4月28日而標題為“Double-Dome Reactor For Semiconductor Processing”,其在此被併入本文以做為參考。然而,可以使用不同組態的高溫磊晶腔室201。
相對地,第4圖為第1圖之根據本發明一實施例的半導體元件製造系統101的方塊圖,半導體元件製造系統101包括一低溫磊晶腔室201。參閱第4圖,類似於高溫磊晶腔室201,低溫磊晶腔室401包括基材固持件203(例如晶座(susceptor)),其適用以支撐基材205。低溫磊晶腔室401適用以接收自電漿產生器103輸出之電漿,並且將電漿與基材205暴露於一低溫,以清潔基材205之表面。例如,第5圖為第4圖之根據本發明一實施例的半導體元件製造系統101的方塊圖,其中低溫磊晶腔室401包括至少一個位在基材固持件203下方之下方加熱模組501。低溫磊晶腔室401係利用下方加熱模組501來加熱基材205至希望的溫度,同時將基材205暴露於一清潔物種(例如一氫電漿)。在一些實施例中,低於約700℃(較佳為介於約400℃與600℃之間)的基材溫度可以被利用以清潔基材205之表面(雖然可以使用一更大或更小且/或不同的溫度範圍)。使用離子化氫物種可以降低需要移除氧、有機物、鹵素與其他來自基材205的污染物之溫度。之後,一磊晶層次係被形成在基材之清潔表面上(如以下所述)。
在一些實施例中,低溫磊晶腔室401小於美國專利案號US6,455,814之腔室,該件專利係發證於西元2002年9月24日而標題為“Backside Heating Chamber For Emissivity Independent Thermal Processes”,其在此被併入本文以做為參考。然而,可以使用不同組態的低溫磊晶腔室401。
電漿產生器103可以(例如感應地)耦接於任何適當的腔室(例如一預處理腔室)。例如,電漿產生器103可以耦接於一EpiClean腔室,其係由位於美國加州聖克拉拉市(Santa Clara)之本申請案受讓人Applied Materials,Inc.所製造。EpiClean腔室適用以從基材之下側來加熱基材。再者,EpiClean腔室適用以操作在低於約5托耳之壓力(例如藉由使用一幫浦,譬如一渦輪分子幫浦)。或者,可以使用包括有一遠端電漿產生器之半導體元件製造系統,其中該遠端電漿產生器耦接於一磊晶腔室。例如,一遠端電漿產生器可以耦接於高溫磊晶腔室201、低溫磊晶腔室401等等。
參閱第6圖,現將描述可以被執行在半導體元件製造系統101內之一示範性清潔操作,第6圖繪示根據本發明之一實施例製備用於磊晶層次形成之基材表面的方法。參閱第6圖,在步驟601,此方法600開始。在步驟602,一基材被裝載進入半導體元件製造系統101之磊晶腔室105。在步驟603,基材被加熱至希望的溫度。例如,基材可以被加熱至低於約700℃之溫度,較佳為介於約400℃至約600℃(雖然可以應用一更大或更小與/或不同的溫度範圍)。在步驟604,電漿產生器103被利用以產生且供應一電漿至磊晶腔室105。例如,一氫電漿可以被產生且被供應至磊晶腔室105。其他反應性物種可以類似地被利用。之後,在步驟605,基材藉由使用電漿而被清潔。依此方式,基材表面可以在額外的處理(例如在基材上形成一磊晶層次,這需要一清潔的基材表面)之前被清潔(例如預清潔)。使用離子化氫物種可以降低需要移除氧、有機物、鹵素與/或其他來自基材的污染物之溫度。
在步驟606,第6圖之方法600結束。透過使用此方法與裝置,磊晶腔室內之基材的表面可以被清潔,較佳地是藉由在低溫使用電漿。是故,污染物可以自基材表面被移除。依此方式,此方法與裝置可以避免高溫來清潔基材表面,其中高溫會不利地影響半導體元件在基材上之處理。類似於第6圖方法之方法能夠藉由一預清潔腔室(例如EpiClean腔室)被利用,其中EpiClean腔室係由位於美國加州聖克拉拉市(Santa Clara)之本申請案受讓人Applied Materials,Inc.所製造。
第7圖繪示根據本發明之一實施例的磊晶薄膜形成的方法700。參閱第7圖,在步驟701,此方法700開始。在步驟702,一基材被裝載進入半導體元件製造系統101之磊晶腔室105。在步驟703,基材被清潔。例如,基材可以使用第6圖之方法600或任何已知方法來清潔。在步驟704,基材被加熱至希望的溫度。例如,基材可以被加熱至介於約200℃與700℃之間的溫度(雖然可以使用其他溫度)。在步驟705,電漿產生器703被利用以產生一電漿。例如,包括一或多種之載體氣體、蝕刻劑氣體、矽源、摻雜物源等等的電漿可以被產生,且被供應至磊晶腔室。
沈積含矽化合物之沈積氣體的示範性源材料包括有矽烷、鹵化矽烷與有機矽烷。矽烷包括有矽烷(SiH4
),以及具有實驗式Six
H( 2 x + 2 )
之更高矽烷,例如二矽烷(Si2
H6
)、三矽烷(Si3
H8
)、與四矽烷(Si4
H1 0
)。鹵化矽烷包括有具有實驗式X’y
Six
H( 2 x + 2 - y )
之化合物,其中X’=F、Cl、Br或I,例如六氯二矽烷(Si2
Cl6
)、四氯矽烷(SiCl4
)、二氯矽烷(Cl2
SiH2
)、與三氯矽烷(Cl3
SiH)。有機矽烷包括有具有實驗式Ry
Six
H( 2 x + 2 - y )
之化合物,其中R=甲基、乙基、丙基或丁基,例如甲基矽烷((CH3
)SiH3
)、二甲基矽烷((CH3
)2
SiH2
)、乙基矽烷((CH3
CH2
)SiH3
)、甲基二矽烷((CH3
)Si2
H5
)、二甲基二矽烷((CH3
)2
Si2
H4
)、與六甲基二矽烷((CH3
)6
Si2
)。有機矽烷化合物已經被發現到在實施例中為有利的矽源與碳源,其係在沈積的含矽化合物中引入碳。較佳的矽源包括有矽烷、二氯矽烷、與二矽烷。
沈積氣體包含至少一種矽源與一載體氣體,且包含至少一種次級元素源(例如鍺源與/或碳源)。並且,沈積氣體可以更包含一摻雜物化合物以提供一摻雜物(例如硼、砷、磷、鎵與/或鋁)之來源。在一替代性實施例中,沈積氣體可以包括至少一種蝕刻劑,例如氯化氫或氯。
用以沈積含矽化合物之鍺源包括有鍺烷(GeH4
)、更高鍺烷與有機鍺烷。更高鍺烷包括有具有實驗式Gex
H( 2 x + 2 )
之化合物,例如二鍺烷(Ge2
H6
)、三鍺烷(Ge3
H8
)、與四鍺烷(Ge4
H1 0
)。有機鍺烷包括有例如以下之化合物,甲基鍺烷((CH3
)GeH3
)、二甲基鍺烷((CH3
)2
GeH2
)、乙基鍺烷((CH3
CH2
)GeH3
)、甲基二鍺烷((CH3
)Ge2
H5
)、二甲基二鍺烷((CH3
)2
Ge2
H4
)、與六甲基二鍺烷((CH3
)6
Ge2
)。
用以沈積含矽化合物之碳源包括有乙基、丙基與丁基之有機矽烷、烷烴、烯烴、與炔烴。這樣的碳源包括有甲基矽烷(CH3
SiH3
)、二甲基矽烷((CH3
)2
SiH2
)、乙基矽烷(CH3
CH2
SiH3
)、甲烷(CH4
)、乙烯(C2
H4
)、乙炔(C2
H2
)、丙烷(C3
H8
)、丙烯(C3
H6
)、丁炔(C4
H6
)。
用做為摻雜物源之含硼摻雜物包括有硼烷與有機硼烷。硼烷包括有硼烷、二硼烷(B2
H6
)、三硼烷、四硼烷、與五硼烷,而烷基硼烷包括有具有實驗式Rx
BH( 3 - x )
之化合物,其中R=甲基、乙基、丙基或丁基,且x=1、2或3。烷基硼烷包括有三甲基硼烷(CH3
)3
B)、二甲基硼烷((CH3
)2
BH)、三乙基硼烷((CH3
CH2
)3
B)、與二乙基硼烷((CH3
CH2
)2
BH)。摻雜物也可以包括砷化氫(AsH3
)、磷化氫(PH3
),以及具有實驗式Rx
PH( 3 - x )
之烷基磷烴,其中R=甲基、乙基、丙基或丁基,且x=1、2或3。烷基磷烴包括一有三甲基磷烴((CH3
)3
P)、二甲基磷烴((CH3
)2
PH)、三乙基磷烴((CH3
CH2
)3
P)、與二乙基磷烴((CH3
CH2
)2
PH)。鋁與鎵摻雜物源可以包括烷基化與/或鹵化衍生物,例如具有實驗室Rx
Mx( 3 - x )
者,其中M=鋁或鎵,R=甲基、乙基、丙基或丁基,X=氯或氟,且x=0、1、2或3。鋁與鎵摻雜物源的實例包括有三甲基鋁(Me3
Al)、三乙基鋁(Et3
Al)二甲基氯化鋁(Me2
AlCl)、氯化鋁(AlCl3
)、三甲基鎵(Me3
Ga)、三乙基鎵(Et3
Ga)、二甲基氯化鎵(Me2
GaCl)、與氯化鎵(GaCl3
)。
在步驟706,一磊晶層次被形成在基材上。不同的製程與/或操作參數可以根據化學被使用以形成磊晶層次。例如,半導體元件製造系統101可以藉由在約200℃至約700℃溫度使用一射頻激發的低能量電漿在基材表面上形成矽、矽鍺與/或其他適當半導體材料之磊晶層次。半導體元件製造系統101可以使用具有約10MHz至約10GHz頻率(雖然可以使用一更大或更小與/或不同的頻率範圍)的來源而感應地或藉由另一適當方法來激發電漿。在一些實施例中,半導體元件製造系統101能夠使得電漿之電子動能低於約15伏特(雖然可以使用一更大或更小與/或不同的動能範圍)。
在步驟707,第7圖之方法700結束。透過使用此方法與裝置,一磊晶層次可以藉由使用一低能量電漿而被形成在基材表面上。當根據本發明而使用一射頻電漿時,使用射頻電漿可以避免基材被傳統DC電漿系統之金屬部件所污染。此方法與裝置可以被利用以建立矽覆絕緣物(silicon-on-insulator)基材與/或用在光學應用之基材。再者,因為此方法與裝置係利用電漿(而非熱源)以在基材上形成(例如解離與沈積)一或多種材料之磊晶層次,磊晶層次可以使用低溫來形成。
經由使用本發明,一寬廣的壓力範圍可以被利用以用於磊晶層次形成。不同的電漿頻率可以被用在不同的化學,且一大區域的均勻密度電漿可以被形成(以例如用於均勻沈積)。
前述說明係僅揭示本發明之示範性實施例。對於熟習該技藝之人士,前述裝置與方法之變更係落入本發明範圍且為明顯的。舉例而言,在前述實施例中,每一高溫磊晶腔室包括至少一個位在基材固持件203下方的下方加熱模組301,與/或至少一個位在基材固持件203上方的上方加熱模組203。可以使用任何數目之熱樣的加熱模組。
因此,雖然本發明已經以示範性實施例來揭示,應當瞭解的是,其他實施例也落入本發明之精神與範圍內,如同隨附申請專利範圍所界定者。
101...半導體元件製造系統
103...電漿產生器
105...磊晶腔室
107...氣體供應
109...電漿
111...幫浦
113...電漿激發設備
115...真空部分
201...高溫磊晶腔室
203...基材固持件
205...基材
301...下方加熱模組
303...上方加熱模組
401...低溫磊晶腔室
501...下方加熱模組
600...製備用於磊晶層次形成之基材表面的方法
601...開始
602...裝載基材進入磊晶腔室
603...加熱基材至希望的溫度
604...使用電漿產生器以產生電漿
605...清潔基材表面
606...結束
700...磊晶薄膜形成的方法
701...開始
702...裝載基材進入磊晶腔室
703...清潔基材
704...加熱基材至希望的溫度
705...使用電漿產生器以產生電漿
706...在基材上形成磊晶材料層次
707...結束
第1圖為根據本發明之一實施例的一半導體元件製造系統之方塊圖,該半導體元件製造系統包括一磊晶腔室。
第2圖為第1圖之根據本發明一實施例的半導體元件製造系統的方塊圖,該半導體元件製造系統包括一高溫磊晶腔室。
第3圖為第2圖之根據本發明一實施例的半導體元件製造系統的方塊圖,其中高溫磊晶腔室包括至少一個位在基材支撐件上方之加熱模組,以及至少一個位在基材支撐件下方之加熱模組。
第4圖為第1圖之根據本發明一實施例的半導體元件製造系統的方塊圖,該半導體元件製造系統包括一低溫磊晶腔室。
第5圖為第4圖之根據本發明一實施例的半導體元件製造系統的方塊圖,其中低溫磊晶腔室包括一位在基材支撐件下方之加熱模組。
第6圖繪示根據本發明之一實施例製備用於磊晶薄膜形成之基材表面的方法。
第7圖繪示根據本發明之一實施例的磊晶薄膜形成的方法。
101...半導體元件製造系統
103...電漿產生器
105...磊晶腔室
107...氣體供應
109...電漿
111...幫浦
113...電漿激發設備
115...真空部分
Claims (25)
- 一種半導體元件製造系統,包含:一磊晶腔室,其適用以在一基材之一表面上形成一材料層次;以及一電漿產生器,其耦接於該磊晶腔室,並適於耦接一氣體供應,其中該電漿產生器適用以自該氣體供應接收一氣體,以該氣體為基礎產生一電漿,並將所產生之該電漿導引至該磊晶腔室;其中該電漿產生器適用以提供一第一電漿,而在該電漿產生器提供一第二電漿至該磊晶腔室以在該基材上形成一磊晶層次之前,該第一電漿清潔該基材之該表面。
- 如申請專利範圍第1項所述之半導體元件製造系統,其中該電漿產生器係遠離該磊晶腔室。
- 如申請專利範圍第1項所述之半導體元件製造系統,其中該電漿產生器係感應地耦接於該磊晶腔室。
- 如申請專利範圍第1項所述之半導體元件製造系統,其中該磊晶腔室包括一電漿激發裝置,該電漿激發裝置位於該磊晶腔室之一真空部分的外面。
- 如申請專利範圍第4項所述之半導體元件製造系統,其 中該電漿激發裝置包括一或更多線圈。
- 如申請專利範圍第1項所述之半導體元件製造系統,其中該磊晶腔室適用以在基材清潔與磊晶薄膜形成之至少一者期間加熱該基材至低於約700℃之溫度。
- 如申請專利範圍第6項所述之半導體元件製造系統,其中該磊晶腔室包括:至少一個下方基材加熱模組,其位於該磊晶腔室之一基材固持件下方;以及至少一個上方基材加熱模組,其位於該磊晶腔室之該基材固持件上方。
- 如申請專利範圍第7項所述之半導體元件製造系統,其中每一加熱模組包括一輻射熱源。
- 如申請專利範圍第1項所述之半導體元件製造系統,其中該磊晶腔室適用以在基材清潔與磊晶薄膜形成之至少一者期間加熱該基材至介於約400℃與600℃之間的溫度。
- 如申請專利範圍第9項所述之半導體元件製造系統,其中該磊晶腔室更包含至少一個基材加熱模組,其位於該基材支撐件下方。
- 一種製造半導體元件之方法,包含:提供一半導體元件製造系統,其具有:一磊晶腔室,其適用以在一基材之一表面上形成一磊晶材料層次;以及一電漿產生器,其耦接於該磊晶腔室,並適於耦接一氣體供應,其中該電漿產生器適用以自該氣體供應接收一氣體,以該氣體為基礎產生一電漿,並將所產生之該電漿導引至該磊晶腔室;以及在使用由該電漿產生器所產生之一第二電漿於該基材上形成該磊晶材料層次之前,使用由該電漿產生器所產生之一第一電漿,利用該半導體元件製造系統以清潔該基材之該表面。
- 如申請專利範圍第11項所述之方法,其中在該基材上形成該磊晶材料層次之前利用該半導體元件製造系統以清潔該基材之該表面係包括:利用該磊晶腔室以加熱該基材至低於約700℃之溫度;利用該電漿產生器以產生且供應一電漿至該磊晶腔室;以及使用該電漿來清潔該基材。
- 如申請專利範圍第12項所述之方法,其中利用該磊晶腔室以加熱該基材至低於約700℃之溫度係包括利用該磊晶腔室以加熱該基材至介於約400℃與600℃之間之溫度。
- 如申請專利範圍第11項所述之方法,更包含利用該磊晶腔室以在該基材上形成一磊晶層次。
- 如申請專利範圍第14項所述之方法,其中利用該磊晶腔室以在該基材上形成一磊晶層次係包含使用一電漿以解離在磊晶層次形成期間所使用的物種。
- 一種製造半導體元件之方法,包含:提供一半導體元件製造系統,其具有:一磊晶腔室,其適用以在一基材之一表面上形成一磊晶材料層次;以及一電漿產生器,其耦接於該磊晶腔室,並適於耦接一氣體供應,其中該電漿產生器適用以自該氣體供應接收一氣體,以該氣體為基礎產生一電漿,並將所產生之一第一電漿導引至該磊晶腔室以清潔該基材;以及使用由該電漿產生器所提供之一第二電漿,利用該半導體元件製造系統以在該基材上形成該磊晶材料層次。
- 如申請專利範圍第16項所述之方法,更包含在該基材上形成該磊晶材料層次之前,利用該半導體元件製造系統以清潔該基材之一表面。
- 如申請專利範圍第16項所述之方法,其中利用該半導體元件製造系統以在該基材上形成該磊晶材料層次係包括:利用該磊晶腔室以加熱該基材至低於約700℃之溫度;利用該電漿產生器以產生電漿;以及使用該電漿以形成該磊晶材料層次。
- 如申請專利範圍第18項所述之方法,其中利用該磊晶腔室以加熱該基材至低於約700℃之溫度係包括利用該磊晶腔室以加熱該基材至介於約400℃與600℃之間之溫度。
- 如申請專利範圍第18項所述之方法,其中利用該電漿產生器以產生電漿係包括使用射頻能量激發該電漿。
- 如申請專利範圍第20項所述之方法,其中使用射頻能量激發該電漿係包括利用具有約10MHz至約10GHz頻率之一電源。
- 如申請專利範圍第20項所述之方法,其中利用該電漿產生器以產生電漿係包括利用該電漿產生器以產生具有低於約15伏特之一動能之電漿。
- 一種半導體元件製造裝置,包含:一磊晶腔室,其適用以在一基材之一表面上形成一材料層次;以及一電漿產生器,其耦接於該磊晶腔室,並適用以導引電漿至該磊晶腔室;其中該磊晶腔室適用以在基材清潔與磊晶薄膜形成之至少一者期間加熱該基材至低於約700℃之溫度。
- 一種半導體元件製造方法,包含:提供一半導體元件製造系統,其具有:一磊晶腔室,其適用以在一基材之一表面上形成一磊晶材料層次;以及一電漿產生器,其耦接於該磊晶腔室,並適用以導引電漿至該磊晶腔室;以及在該基材上形成該磊晶材料層次之前,利用該半導體元件製造系統以清潔該基材之該表面,其中清潔該表面包括利用該磊晶腔室加熱該基材至低於約700℃之溫度。
- 一種半導體元件製造方法,包含:提供一半導體元件製造系統,其具有:一磊晶腔室,其適用以在一基材之一表面上形成一磊晶材料層次;以及一電漿產生器,其耦接於該磊晶腔室,並適用以導引電漿至該磊晶腔室;利用該半導體元件製造系統以於該基材上形成該磊晶材料層次;以及在於該基材上形成該磊晶材料層次之前,藉由利用該磊晶腔室加熱該基材至低於約700℃之溫度,以利用該半導體元件製造系統清潔該基材之該表面。
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2006
- 2006-10-03 KR KR1020087008452A patent/KR101038843B1/ko not_active IP Right Cessation
- 2006-10-03 EP EP06825564A patent/EP1945836A4/en not_active Withdrawn
- 2006-10-03 WO PCT/US2006/039171 patent/WO2007044530A2/en active Application Filing
- 2006-10-03 JP JP2008534720A patent/JP2009512196A/ja not_active Withdrawn
- 2006-10-03 CN CN200680037091XA patent/CN101283121B/zh not_active Expired - Fee Related
- 2006-10-03 US US11/538,195 patent/US20070117414A1/en not_active Abandoned
- 2006-10-03 TW TW095136765A patent/TWI390603B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
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KR20080046233A (ko) | 2008-05-26 |
EP1945836A4 (en) | 2009-12-02 |
CN101283121B (zh) | 2012-10-03 |
EP1945836A2 (en) | 2008-07-23 |
JP2009512196A (ja) | 2009-03-19 |
US20070117414A1 (en) | 2007-05-24 |
KR101038843B1 (ko) | 2011-06-03 |
TW200746265A (en) | 2007-12-16 |
WO2007044530A2 (en) | 2007-04-19 |
WO2007044530A3 (en) | 2007-12-13 |
CN101283121A (zh) | 2008-10-08 |
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