TWI387141B - A method for making a piezoelectric quartz resonator wafer - Google Patents
A method for making a piezoelectric quartz resonator wafer Download PDFInfo
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Description
本發明係有關一種切割晶片之技術，特別是指一種以雷射切割製作壓電石英振盪子晶片之方法。The present invention relates to a technique for cutting a wafer, and more particularly to a method for fabricating a piezoelectric quartz resonator wafer by laser cutting.
按，石英振盪子(Quartz crystal unit)是振盪電路中決定振盪頻率的關鍵零件，其係採用單晶石英晶體以特殊之切割方式並以機械加工方式予以表面研磨，由於單結晶之石英晶體結構具有壓電效應(piezo effect)特性，故掌握住石英晶體之壓電效應及其發生共振頻率之特性即可設計出各類頻率信號之石英振盪器。而由於石英晶體具有極高之Q值，故石英振盪器之頻率控制元件－－振盪子係採用石英晶體為材料。According to the Quartz crystal unit, it is a key component in the oscillation circuit that determines the oscillation frequency. It is made of a single crystal quartz crystal in a special cutting manner and mechanically ground. Because of the single crystal quartz crystal structure The piezoelectric effect (piezo effect), so that the piezoelectric effect of the quartz crystal and its resonance frequency characteristics can be used to design a quartz oscillator of various frequency signals. Since the quartz crystal has a very high Q value, the frequency control element of the quartz oscillator--the oscillator is made of quartz crystal.
石英晶片之切割流程如第1圖所示，包括頻率研磨、排片上膠、長邊線切割、外型研磨、短邊線切割、外型研磨、煮膠及蝕刻等步驟，一次將好幾片石英晶片疊在一起切割，且每一片切割完成之後再逐顆調整、浸蝕。當石英振盪子微小化或是使用於低頻產品時，為了降低阻抗通常以圓邊方式將石英晶片之切面切割為圓弧形，用以侷限振動能量達到降低阻抗之目的，但隨著石英振盪子尺寸不斷縮小，傳統圓邊方式所能達到之效果已逐漸受限，且小型化產品使用傳統線切割加上邊緣研磨方式具有工序複雜及切割比例低之缺點。The cutting process of the quartz wafer is as shown in Fig. 1, including frequency grinding, sheet sizing, long side cutting, external grinding, short edge cutting, external grinding, boiling and etching, and several quartz wafer stacks at a time. Cut together, and after each cut, adjust and etch one by one. When the quartz resonator is miniaturized or used in low-frequency products, in order to reduce the impedance, the cut surface of the quartz wafer is usually cut into a circular arc shape in a rounded manner to limit the vibration energy to reduce the impedance, but with the quartz resonator As the size continues to shrink, the effect of the traditional round-edge method has been gradually limited, and the use of conventional wire-cutting and edge-polishing methods for miniaturized products has the disadvantages of complicated processes and low cutting ratio.
因此，本發明即提出一種製作壓電石英振盪子晶片之方法，使用雷射切割晶片之邊緣，以有效克服上述之該等問題，具體架構及其實施方式將詳述於下。Accordingly, the present invention is directed to a method of fabricating a piezoelectric quartz oscillator wafer that uses laser cutting of the edges of the wafer to effectively overcome the above-described problems. The specific architecture and embodiments thereof will be described in detail below.
本發明之主要目的在提供一種製作壓電石英振盪子晶片之方法，其係利用雷射切割單結晶之石英晶片以在石英振盪子晶片之邊緣創造出雙晶區域。SUMMARY OF THE INVENTION A primary object of the present invention is to provide a method of fabricating a piezoelectric quartz resonator wafer by laser cutting a single crystal quartz wafer to create a twin region at the edge of the quartz resonator wafer.
本發明之另一目的在提供一種製作壓電石英振盪子晶片之方法，其係利用雷射之能量及溫度讓石英晶片之邊緣產生變質效果，得到雙結晶的邊緣區域。Another object of the present invention is to provide a method of fabricating a piezoelectric quartz resonator wafer which utilizes the energy and temperature of the laser to impart a metamorphic effect to the edge of the quartz wafer to obtain a double crystal edge region.
本發明之再一目的在提供一種製作壓電石英振盪子晶片之方法，其只需一次研磨及一次浸蝕即可將石英晶片之共振頻率調整為所需之頻率。Still another object of the present invention is to provide a method of fabricating a piezoelectric quartz resonator wafer which can adjust the resonance frequency of the quartz wafer to a desired frequency by one polishing and one etching.
本發明之又一目的在提供一種製作壓電石英振盪子晶片之方法，其中晶片邊緣之雙晶區域可集中石英之振盪能量。It is still another object of the present invention to provide a method of fabricating a piezoelectric quartz resonator wafer in which a bimorphic region of the edge of the wafer concentrates the oscillation energy of the quartz.
為達上述之目的，本發明提供一種製作壓電石英振盪子晶片之方法，其係包括下列步驟：將至少一石英晶片研磨至一預設之厚度；對石英晶片進行蝕刻；以及利用雷射對石英晶片之邊緣進行處理而產生一變質區域。To achieve the above object, the present invention provides a method of fabricating a piezoelectric quartz resonator wafer, comprising the steps of: grinding at least one quartz wafer to a predetermined thickness; etching the quartz wafer; and utilizing a laser pair The edges of the quartz wafer are processed to create a metamorphic region.
本發明另提供一種製作壓電石英振盪子晶片之方法，其係包括下列步驟：將至少一石英晶片研磨至一預設之厚度；利用雷射對石英晶片之邊緣進行處理而產生一變質區域；以及對石英晶片進行蝕刻。The invention further provides a method for fabricating a piezoelectric quartz oscillator chip, comprising the steps of: grinding at least one quartz wafer to a predetermined thickness; processing the edge of the quartz wafer with a laser to generate a metamorphic region; And etching the quartz wafer.
底下藉由具體實施例詳加說明，當更容易瞭解本發明之目的、技術內容、特點及其所達成之功效。The purpose, technical content, features and effects achieved by the present invention will be more readily understood by the detailed description of the embodiments.
本發明提供一種製作壓電石英振盪子晶片之方法，成本低，較傳統線切割與邊緣研磨之方式簡化製程，不但可達到振盪能量集中之效果，同時 更可提高壓電石英振盪子晶片之生產效能。The invention provides a method for manufacturing a piezoelectric quartz oscillator chip, which has low cost and simplifies the process compared with the traditional wire cutting and edge grinding, and can not only achieve the effect of oscillating energy concentration, but also achieve the effect of oscillating energy concentration. The production efficiency of the piezoelectric quartz oscillator chip can be improved.
石英是由矽原子和氧原子組合而成的二氧化矽(Silicon Dioxide,SiO2 )，其為一種以32點群的六方晶系形成的單結晶結構，單結晶的石英晶體結構具有壓電效應特性，當施加壓力在晶體某些方向時，垂直施力的方向就會產生電氣電位，相對的，當以一個電場施加在石英晶體某些軸向時，在另一些方向就會產生變形或振動現象。因為石英晶體具有很高的材料Q值，所以絕大部份的頻率控制元件，如共振子及振盪器，皆以石英材料為基礎。以石英為基礎的頻率控制元件可以依其壓電振動的屬性，可以分為體波(bulk wave)振動元件及表面聲波(surface acoustic wave)振動元件，其中石英振盪子即為體波振動元件。當石英晶體以特定的切割方式，並以機械加工方式予以表面研磨後，完成特定的外型尺寸就是通稱的石英晶片(quartz wafer或quartz blank)。將這個石英晶片放置在真空環境中，於表面鍍上電極後，再以導電材料固定在金屬或是陶瓷基座上，並加以封裝，就成為一般所謂的石英振盪子(quartz crystal resonator)。本發明之技術即在於將石英晶體切割為石英晶片之技術，於本發明中所述之壓電石英振盪子晶片亦即石英晶片。Quartz is a combination of germanium and oxygen atoms (Silicon Dioxide, SiO 2 ), which is a single crystal structure formed by a 32-point hexagonal system. The single crystal quartz crystal structure has a piezoelectric effect. Characteristic, when the pressure is applied in some directions of the crystal, the direction of the vertical force exerts an electrical potential. In contrast, when an electric field is applied to some axial directions of the quartz crystal, deformation or vibration occurs in other directions. phenomenon. Because quartz crystals have a high material Q value, most of the frequency control components, such as resonators and oscillators, are based on quartz materials. The quartz-based frequency control element can be classified into a bulk wave vibration element and a surface acoustic wave vibration element according to the properties of the piezoelectric vibration, wherein the quartz resonator is a bulk wave vibration element. When the quartz crystal is surface-polished in a specific cutting manner and mechanically processed, the specific outer dimensions are known as quartz wafers or quartz blanks. The quartz wafer is placed in a vacuum environment, and after plating the electrode on the surface, it is fixed on a metal or ceramic base with a conductive material, and is packaged to become a so-called quartz crystal resonator. The technique of the present invention resides in a technique of cutting a quartz crystal into a quartz wafer, and the piezoelectric quartz resonator wafer described in the present invention is also a quartz wafer.
第2圖所示為本發明中製作壓電石英振盪子晶片之方法之流程圖，將單結晶之片狀石英晶體(後文中以石英晶片稱之)切割成壓電石英振盪子晶片，如圖所示，在步驟S10中將石英晶片研磨至一預設之厚度，此厚度與最終成品所需之頻率有關，因此相當於對壓電石英振盪子晶片之頻率進行粗調；接著於步驟S12中將石英晶片置入一浸蝕溶液進行蝕刻，此步驟 之用意在於使其頻率特性一致，相當於壓電石英振盪子晶片之微調；最後進行步驟S14，利用雷射能量使石英晶片之邊緣變質形成雙晶區域。2 is a flow chart showing a method of fabricating a piezoelectric quartz resonator chip in the present invention, in which a single crystal piece of quartz crystal (hereinafter referred to as a quartz wafer) is cut into a piezoelectric quartz resonator chip, as shown in the figure. As shown, in step S10, the quartz wafer is ground to a predetermined thickness, which is related to the frequency required for the final product, and thus corresponds to a coarse adjustment of the frequency of the piezoelectric quartz resonator chip; then in step S12 The quartz wafer is placed in an etching solution for etching, this step The purpose is to make the frequency characteristics uniform, which is equivalent to the fine adjustment of the piezoelectric quartz oscillator chip; finally, in step S14, the edge of the quartz wafer is metamorphosed to form a twin-crystal region by using the laser energy.
其中，步驟S10係利用一平面研磨機研磨石英晶片。由於石英之厚度會影響其共振頻率，亦即要得到所需求的共振頻率便需調整石英之厚度，在步驟S10中先以研磨粗調至一大概厚度後，再控制浸蝕時間對石英晶片之厚度進行微調。Wherein, in step S10, the quartz wafer is ground by a plane grinder. Since the thickness of the quartz affects its resonant frequency, that is, the thickness of the quartz needs to be adjusted to obtain the desired resonant frequency. In step S10, the thickness of the quartz wafer is controlled by coarsely adjusting the thickness to a rough thickness. Make fine adjustments.
頻率特性調整為一致的石英晶片更可在步驟S14中以雷射切割成小塊之壓電石英振盪子晶片，如第3圖所示，將一塊石英晶片10由切割道18以雷射切割成左右兩塊壓電石英振盪子晶片12，由於石英晶片10原本為單晶結構，但經過雷射能量產生變質後切割邊緣變成雙晶結構，因此壓電石英振盪子晶片包括單晶區域14及雙晶區域16。The quartz crystal wafer whose frequency characteristics are adjusted to be uniform can be laser-cut into small piezoelectric quartz crystal resonator chips in step S14. As shown in Fig. 3, a quartz wafer 10 is laser-cut from the dicing street 18 into a laser. The two piezoelectric quartz crystal oscillator chips 12 are left and right. Since the quartz wafer 10 is originally a single crystal structure, the cut edge becomes a twin crystal structure after being deformed by the laser energy, so the piezoelectric quartz resonator wafer includes the single crystal region 14 and the double Crystal region 16.
第2圖中之步驟S12及步驟S14可互換，如第4圖所示，步驟S20與第2圖之步驟S10相同，先將石英晶片研磨至一預設之厚度，接著於步驟S22中利用雷射之高溫能量在石英晶片之邊緣產生變質的雙晶區域，最後進行步驟S24，將石英晶片置入一浸蝕溶液進行蝕刻。步驟S22中亦可利用雷射將石英晶片切割為複數壓電石英振盪子晶片，之後再對壓電石英振盪子晶片進行步驟S24。Step S12 and step S14 in FIG. 2 are interchangeable. As shown in FIG. 4, step S20 is the same as step S10 of FIG. 2, first grinding the quartz wafer to a predetermined thickness, and then using the thunder in step S22. The high-temperature energy of the shot generates a metamorphic twin-crystal region at the edge of the quartz wafer, and finally, in step S24, the quartz wafer is placed in an etching solution for etching. In step S22, the quartz wafer may be cut into a plurality of piezoelectric quartz resonator chips by laser, and then the piezoelectric quartz resonator wafer is subjected to step S24.
第5圖為壓電石英振盪子晶片之封裝結構，如圖所示，此封裝結構包括壓合而成之封裝底層20，最上方即為利用本發明方法所製作之壓電石英振盪子晶片12，其上設有電極、佈線等(圖中未示)，壓電石英振盪子晶片12周邊為本發明以雷射使石英晶片產生變質之雙晶區域16。Fig. 5 is a package structure of a piezoelectric quartz resonator chip. As shown, the package structure includes a packaged underlayer 20 which is laminated, and the uppermost portion is a piezoelectric quartz resonator chip 12 fabricated by the method of the present invention. An electrode, a wiring, or the like (not shown) is provided thereon, and the periphery of the piezoelectric quartz resonator chip 12 is a twin crystal region 16 in which the quartz wafer is deteriorated by laser.
綜上所述，本發明所提供之製作壓電石英振盪子晶片之方法只需經過一次研磨(粗調)及一次浸蝕(微調)即可得到所需頻率之石英晶片，較先前技術每一邊皆需切割及研磨之方式節省相當多工序，大量簡化製程並降低成本，提高晶片生產效能；此外，利用雷射切割石英晶片所產生之雙晶區域更可集中振盪能量，使以此製作出之石英振盪器所產生之頻率更加準確。In summary, the method for fabricating a piezoelectric quartz oscillator chip provided by the present invention requires only one grinding (coarse adjustment) and one etching (fine adjustment) to obtain a quartz wafer of a desired frequency, which is superior to each side of the prior art. The method of cutting and grinding saves a lot of processes, greatly simplifies the process and reduces the cost, and improves the wafer production efficiency. In addition, the twin crystal regions generated by laser-cut quartz wafers can concentrate the oscillation energy to make the quartz. The frequency generated by the oscillator is more accurate.
唯以上所述者，僅為本發明之較佳實施例而已，並非用來限定本發明實施之範圍。故即凡依本發明申請範圍所述之特徵及精神所為之均等變化或修飾，均應包括於本發明之申請專利範圍內。The above is only the preferred embodiment of the present invention and is not intended to limit the scope of the present invention. Therefore, any changes or modifications of the features and spirits of the present invention should be included in the scope of the present invention.
10‧‧‧石英晶片10‧‧‧Quartz wafer
12‧‧‧壓電石英振盪子晶片12‧‧‧ Piezoelectric quartz oscillator chip
14‧‧‧單晶區域14‧‧‧Single crystal area
16‧‧‧雙晶區域16‧‧‧ twin crystal region
18‧‧‧切割道18‧‧‧ cutting road
20‧‧‧封裝底層20‧‧‧Package bottom layer
第1圖為先前技術中切割壓電石英振盪子晶片之流程圖。Figure 1 is a flow diagram of a prior art cut piezoelectric quartz crystal oscillator chip.
第2圖為本發明中製作壓電石英振盪子晶片之流程圖。Fig. 2 is a flow chart showing the fabrication of a piezoelectric quartz resonator chip in the present invention.
第3圖為本發明中以雷射切割石英晶片產生變質區域之示意圖。Fig. 3 is a schematic view showing a metamorphic region in a laser-cut quartz wafer in the present invention.
第4圖為本發明中製作壓電石英振盪子晶片之另一流程圖。Fig. 4 is another flow chart for fabricating a piezoelectric quartz resonator chip in the present invention.
第5圖為石英晶片之封裝結構圖。Figure 5 is a package structure diagram of a quartz wafer.
10‧‧‧石英晶片10‧‧‧Quartz wafer
12‧‧‧壓電石英振盪子晶片12‧‧‧ Piezoelectric quartz oscillator chip
14‧‧‧單晶區域14‧‧‧Single crystal area
16‧‧‧雙晶區域16‧‧‧ twin crystal region
18‧‧‧切割道18‧‧‧ cutting road
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4554717A (en) * | 1983-12-08 | 1985-11-26 | The United States Of America As Represented By The Secretary Of The Army | Method of making miniature high frequency SC-cut quartz crystal resonators |
| US4661201A (en) * | 1985-09-09 | 1987-04-28 | Cts Corporation | Preferential etching of a piezoelectric material |
| US6898832B2 (en) * | 2001-10-31 | 2005-05-31 | Piedek Technical Laboratory | Method for manufacturing a quartz crystal unit |
| US6915548B2 (en) * | 2002-03-06 | 2005-07-12 | Piedek Technical Laboratory | Method for manufacturing quartz crystal tuning fork resonator, quartz crystal unit having quartz crystal tuning fork resonator, and quartz crystal oscillator having quartz crystal unit |
| US7174620B2 (en) * | 2002-12-27 | 2007-02-13 | Nihon Dempa Kogyo Co., Ltd. | Method of manufacturing thin quartz crystal wafer |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4554717A (en) * | 1983-12-08 | 1985-11-26 | The United States Of America As Represented By The Secretary Of The Army | Method of making miniature high frequency SC-cut quartz crystal resonators |
| US4661201A (en) * | 1985-09-09 | 1987-04-28 | Cts Corporation | Preferential etching of a piezoelectric material |
| US6898832B2 (en) * | 2001-10-31 | 2005-05-31 | Piedek Technical Laboratory | Method for manufacturing a quartz crystal unit |
| US6915548B2 (en) * | 2002-03-06 | 2005-07-12 | Piedek Technical Laboratory | Method for manufacturing quartz crystal tuning fork resonator, quartz crystal unit having quartz crystal tuning fork resonator, and quartz crystal oscillator having quartz crystal unit |
| US7174620B2 (en) * | 2002-12-27 | 2007-02-13 | Nihon Dempa Kogyo Co., Ltd. | Method of manufacturing thin quartz crystal wafer |
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