TWI387041B - Substrate cooling method and substrate cooling device - Google Patents
Substrate cooling method and substrate cooling device Download PDFInfo
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- TWI387041B TWI387041B TW097131017A TW97131017A TWI387041B TW I387041 B TWI387041 B TW I387041B TW 097131017 A TW097131017 A TW 097131017A TW 97131017 A TW97131017 A TW 97131017A TW I387041 B TWI387041 B TW I387041B
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- 239000000758 substrate Substances 0.000 title claims description 117
- 238000001816 cooling Methods 0.000 title claims description 71
- 239000007788 liquid Substances 0.000 claims description 51
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 13
- 230000007246 mechanism Effects 0.000 claims description 13
- 238000009834 vaporization Methods 0.000 claims description 12
- 230000008016 vaporization Effects 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 7
- 238000009423 ventilation Methods 0.000 claims description 6
- 239000000498 cooling water Substances 0.000 description 58
- 230000032258 transport Effects 0.000 description 12
- 238000004140 cleaning Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000000112 cooling gas Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000003507 refrigerant Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 230000001680 brushing effect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- YTPFRRRNIYVFFE-UHFFFAOYSA-N 2,2,3,3,5,5-hexamethyl-1,4-dioxane Chemical compound CC1(C)COC(C)(C)C(C)(C)O1 YTPFRRRNIYVFFE-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 239000003480 eluent Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67706—Mechanical details, e.g. roller, belt
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
本發明係關於一種對已實施加熱處理之LCD(Liquid Crystal Display，液晶顯示器)、PDP(Plasma Display Panel，電漿顯示面板)用玻璃基板等之基板實施冷卻處理之基板冷卻方法及基板冷卻裝置。The present invention relates to a substrate cooling method and a substrate cooling device for performing a cooling treatment on a substrate such as an LCD (Liquid Crystal Display) or a PDP (Plasma Display Panel) glass substrate which has been subjected to heat treatment.
先前，於製造玻璃基板等之光微影製程中，作為於基板上形成光阻覆膜之前階段之處理，依序對基板進行如下處理：對清洗後之基板實施加熱處理而除去水分之處理(脫水烘培處理)以及對加熱後之基板進行冷卻之冷卻處理。先前，此種處理係按照加熱板以及冷卻板之順序藉由機械手移動替換基板而進行，但近年來，為了提高產量，如專利文獻1所揭示之裝置般，一面利用輥來搬送基板，一面藉由沿著搬送輥而配置之加熱器對基板進行加熱之後，於下游側噴射已冷卻至特定溫度之冷卻氣體，藉此冷卻基板。再者，於該文獻1中揭示有如下內容：將冷卻氣體噴射至搬送輥上，輥本身亦會受到冷卻，因此可利用自基板至輥之熱傳導而高效率地冷卻基板；又，藉由使冷卻水於搬送輥內循環，亦能夠獲得同樣之效果。Conventionally, in the photolithography process for producing a glass substrate or the like, as a process before the formation of the photoresist film on the substrate, the substrate is sequentially processed as follows: the substrate after the cleaning is subjected to heat treatment to remove moisture ( Dehydration baking treatment) and cooling treatment for cooling the heated substrate. In the prior art, the substrate is replaced by a robot in the order of the heating plate and the cooling plate. In recent years, in order to increase the yield, the substrate is transported by a roller as in the device disclosed in Patent Document 1. After the substrate is heated by the heater disposed along the conveying roller, the cooling gas cooled to a specific temperature is sprayed on the downstream side, thereby cooling the substrate. Further, in the document 1, it is disclosed that the cooling gas is sprayed onto the conveying roller, and the roller itself is also cooled, so that the substrate can be efficiently cooled by heat conduction from the substrate to the roller; The same effect can be obtained by circulating cooling water in the transfer roller.
[專利文獻1]日本專利特開2006－245110號公報。[Patent Document 1] Japanese Laid-Open Patent Publication No. 2006-245110.
如專利文獻1所述，藉由搬送輥來冷卻基板係有效之基 板冷卻手段。然而，於噴射冷卻氣體以冷卻搬送輥之情形時，由於需要大量之製冷劑，故而存在運行成本增大之問題。又，即使於使冷卻水在搬送輥內循環之情形時，亦需要具有冷卻功能之冷卻水之循環設備，又，需要用以防止液體自搬送輥洩漏之特殊之密封構造等，因此存在裝置成本或運行成本增大之問題。As described in Patent Document 1, the base of the substrate is cooled by the transfer roller. Plate cooling means. However, in the case where the cooling gas is sprayed to cool the conveying roller, since a large amount of refrigerant is required, there is a problem that the running cost is increased. Further, even when the cooling water is circulated in the conveying roller, a cooling water circulating device having a cooling function is required, and a special sealing structure for preventing the liquid from leaking from the conveying roller is required, and thus the device cost is present. Or the problem of increased operating costs.
本發明係鑒於上述問題開發而成者，其目的在於藉由搬送輥來搬送基板，並且以價格更低廉之構成來冷卻基板。The present invention has been developed in view of the above problems, and an object thereof is to transport a substrate by a transfer roller and to cool the substrate at a lower cost.
為了解決上述問題，本發明之基板冷卻方法係對加熱處理後之基板進行冷卻者，於藉由搬送輥來搬送上述基板之同時，將冷卻用之液體導入至該搬送輥之內部，使該液體伴隨上述搬送輥之旋轉而氣化，將該蒸氣排出至該搬送輥之外部，藉此經由上述搬送輥而對上述基板進行冷卻。In order to solve the above problem, in the substrate cooling method of the present invention, the substrate after the heat treatment is cooled, and the substrate is transported by the transfer roller, and the liquid for cooling is introduced into the transfer roller to make the liquid. The vaporization is carried out by the rotation of the transfer roller, and the vapor is discharged to the outside of the transfer roller, whereby the substrate is cooled via the transfer roller.
亦即，將液體導入至搬送輥之內部，伴隨搬送輥之旋轉，使上述液體沿著該輥內周面移動，藉此使該液體液膜化或者液滴化，從而增大該液體之表面積(氣液界面之面積)以促進液體之氣化，藉此促進搬送輥所具有之氣化熱之消耗以冷卻搬送輥。而且，由於藉由以上述方式經冷卻之搬送輥來搬送基板，故而藉由自基板至搬送輥之熱傳導來冷卻基板。根據此種方法，能夠以較少之液體之量而有效地冷卻搬送輥，又，由於在搬送輥內使液體氣化並將其直接排出，故而無需用於防止自搬送輥洩漏液體之嚴密之密封構造等。因此，能夠以簡單之構成來冷卻基板。In other words, the liquid is introduced into the inside of the transfer roller, and the liquid is moved along the inner circumferential surface of the roller in accordance with the rotation of the transfer roller, thereby fluidizing or dropletizing the liquid to increase the surface area of the liquid. (The area of the gas-liquid interface) promotes the vaporization of the liquid, thereby promoting the consumption of the vaporization heat of the conveying roller to cool the conveying roller. Further, since the substrate is conveyed by the transport roller cooled as described above, the substrate is cooled by heat conduction from the substrate to the transfer roller. According to this method, the conveying roller can be efficiently cooled with a small amount of liquid, and since the liquid is vaporized and directly discharged in the conveying roller, there is no need for preventing the leakage of the liquid from the conveying roller. Sealing structure, etc. Therefore, the substrate can be cooled with a simple configuration.
再者，能夠使用各種各樣之液體作為上述液體，但考慮到處理之便利性或運行成本，較好的是將常溫之水作為上述液體而導入至搬送輥內。Further, various liquids can be used as the liquid. However, in view of handling convenience or running cost, it is preferred to introduce water at normal temperature into the transfer roller as the liquid.
另一方面，本發明之基板冷卻裝置係對加熱處理後之基板進行冷卻者，且具有：中空之搬送輥，其構成為於上述基板之整個寬度方向上連續地支持上述基板；液體供給機構，其於能夠保持空間比率較大之狀態的範圍內，將冷卻用之液體供給至上述搬送輥之內部；以及換氣機構，其對至少於旋轉中之上述搬送輥內進行換氣。On the other hand, the substrate cooling device of the present invention cools the substrate after the heat treatment, and has a hollow transfer roller configured to continuously support the substrate in the entire width direction of the substrate, and a liquid supply mechanism. The liquid for cooling is supplied to the inside of the transfer roller in a range in which the space ratio can be maintained, and the ventilation mechanism that ventilates the transfer roller at least during rotation.
根據該裝置，藉由液體供給機構將液體導入至搬送輥內，藉此使搬送輥之熱量作為液體之氣化熱而受到消耗，以對搬送輥進行冷卻，利用以上述方式經冷卻之搬送輥來搬送基板，藉此，利用朝向搬送輥之熱傳導來冷卻基板。藉由產生此種熱傳遞而冷卻基板。尤其是，以保持空間比率較大之狀態的方式，將液體導入至搬送輥，並且對搬送輥內進行換氣，因此於搬送輥內，液體會沿著輥內周面移動而液膜化或者液滴化，藉此表面積(氣液界面之面積)增大。因此，藉由液體表面積之增大與上述換氣之相互作用而有效地促進液體之氣化。因此，順利地進行如上所述之熱傳遞，藉此有效地對搬送中之基板進行冷卻。According to this apparatus, the liquid is introduced into the transfer roller by the liquid supply means, whereby the heat of the transfer roller is consumed as the vaporization heat of the liquid, and the transfer roller is cooled, and the transfer roller cooled in the above manner is used. The substrate is transferred, whereby the substrate is cooled by heat conduction toward the transfer roller. The substrate is cooled by generating such heat transfer. In particular, since the liquid is introduced into the transfer roller and the inside of the transfer roller is ventilated so that the space ratio is large, the liquid moves along the inner circumferential surface of the roller to form a liquid film or The droplets are formed, whereby the surface area (area of the gas-liquid interface) is increased. Therefore, the vaporization of the liquid is effectively promoted by the interaction of the increase in the surface area of the liquid with the above-described ventilation. Therefore, the heat transfer as described above is smoothly performed, thereby effectively cooling the substrate during transportation.
於該構成中，較好的是上述液體供給機構包括***至搬送輥內並沿其軸方向延伸之噴嘴，該噴嘴將上述液體供給至所述搬送輥中至少支持基板之區域。In this configuration, it is preferable that the liquid supply means includes a nozzle that is inserted into the transfer roller and extends in the axial direction, and the nozzle supplies the liquid to a region of the transfer roller that supports at least the substrate.
根據該構成，於搬送輥中尤其能夠集中地對與基板接觸 之部分進行冷卻，因此能夠以較少之液體量來有效地冷卻基板。According to this configuration, in particular, it is possible to collectively contact the substrate in the conveying roller. Part of the cooling is performed, so that the substrate can be efficiently cooled with a small amount of liquid.
又，較好的是上述噴嘴於上述搬送輥之長度方向上均勻地供給上述液體。Further, it is preferable that the nozzle uniformly supplies the liquid in the longitudinal direction of the conveying roller.
根據該構成，能夠有效地防止沿著搬送輥之長度方向產生溫度梯度，從而能夠均勻地冷卻基板。According to this configuration, it is possible to effectively prevent the temperature gradient from occurring along the longitudinal direction of the transport roller, and it is possible to uniformly cool the substrate.
再者，作為上述液體，能夠使用各種各樣之液體，但考慮到操作性或運行成本，採用水則較為有效。因此，較好的是上述液體供給機構供給水作為上述液體。Further, as the liquid, various liquids can be used, but water is more effective in view of workability and running cost. Therefore, it is preferred that the liquid supply means supplies water as the liquid.
又，於上述構成中設置有冷卻機構，該冷卻機構於將上述液體供給至上述搬送輥之前，對上述液體進行冷卻。Further, in the above configuration, a cooling mechanism that cools the liquid before supplying the liquid to the transfer roller is provided.
根據該構成，能夠利用少量之液體自搬送輥吸收更多之氣化熱，因此能夠更有效地冷卻搬送輥，藉此基板之冷卻效果提高。According to this configuration, since a small amount of liquid can absorb more vaporization heat from the conveying roller, the conveying roller can be cooled more effectively, and the cooling effect of the substrate can be improved.
根據請求項1、之基板冷卻方法以及請求項3~7之基板冷卻裝置，可不設置具有冷卻機構之冷卻水之循環設備等，而藉由搬送輥來有效地冷卻搬送中之基板。因此，與先前之此種基板冷卻裝置相比，能夠以更低廉之構成來冷卻基板。According to the substrate cooling method of the request item 1, the substrate cooling device of the claims 3 to 7, and the circulation device of the cooling water having the cooling mechanism, the substrate can be efficiently cooled by the transfer roller. Therefore, the substrate can be cooled in a lower cost than the substrate cooling device of the prior art.
利用圖式對本發明之較佳實施形態加以說明。Preferred embodiments of the present invention will be described with reference to the drawings.
圖1係概略性地表示組裝有本發明之基板冷卻裝置(使用本發明之基板冷卻方法之基板冷卻裝置)之基板處理裝置 之主要部分的剖面圖。1 is a view schematically showing a substrate processing apparatus incorporating a substrate cooling device (substrate cooling device using the substrate cooling method of the present invention) of the present invention A cross-sectional view of the main part.
該基板處理裝置按照光微影之製程而對LCD、PDP用之玻璃基板S(以下稱作基板S)實施各種處理，因此自上游側依序具有用於清洗基板S之清洗處理部1A、將基板S加熱至特定溫度為止之加熱處理部1B以及將加熱後之基板S冷卻至特定溫度為止之冷卻處理部1C(相當於本發明之基板冷卻裝置)。於該冷卻處理部1C之下游側，進而設置有用於在基板S上形成抗蝕劑覆膜之抗蝕劑塗布部等。The substrate processing apparatus performs various processes on the glass substrate S (hereinafter referred to as the substrate S) for LCD and PDP in accordance with the process of photolithography. Therefore, the cleaning processing unit 1A for cleaning the substrate S is sequentially provided from the upstream side. The heat treatment unit 1B for heating the substrate S to a specific temperature and the cooling treatment unit 1C (corresponding to the substrate cooling device of the present invention) for cooling the substrate S after heating to a specific temperature. Further, on the downstream side of the cooling treatment portion 1C, a resist coating portion or the like for forming a resist film on the substrate S is further provided.
各處理部1A~1C具有經由基板搬送用之開口部而相互連通之箱形之處理槽10~12。於該等處理槽10~12之內部，以特定間隔設置有搬送輥14，於以水平姿勢搬送基板S之同時，將基板S自清洗處理部1A依序搬送至下游側之處理部1B、1C。Each of the processing units 1A to 1C has a box-shaped processing tank 10 to 12 that communicates with each other via an opening for substrate transfer. In the inside of the processing tanks 10 to 12, the transport roller 14 is provided at a predetermined interval, and the substrate S is transported in a horizontal posture, and the substrate S is sequentially transported from the cleaning processing unit 1A to the processing units 1B and 1C on the downstream side. .
於清洗處理部1A內，設置有用於依序對基板S實施例如刷洗、吹洗以及淋洗等之各清洗機構(省略圖示)，於清洗處理部1A之最下游側，配備有用於在沖洗處理之後將附著於基板S之淋洗液除去之上下一對氣刀16a、16b。In the cleaning processing unit 1A, cleaning mechanisms (not shown) for sequentially performing, for example, brushing, purging, and rinsing on the substrate S are provided, and are provided on the most downstream side of the cleaning processing unit 1A for rinsing. After the treatment, the eluent adhered to the substrate S is removed from the upper pair of air knives 16a, 16b.
於加熱處理部1B內，在夾持搬送輥14之上下兩側之位置處配置有平板式加熱器17a、17b。又，雖然省略圖示，但配備有噴嘴等，該噴嘴用以朝加熱中之基板S呈霧狀地噴射HMDS(Hexamethyldisilazane，六甲基二矽胺烷)等抗蝕劑覆膜之密著強化劑。In the heat treatment unit 1B, plate heaters 17a and 17b are disposed at positions on the upper and lower sides of the conveyance roller 14 . Further, although not shown, a nozzle or the like is provided for ejecting a dense coating of a resist film such as HMDS (Hexamethyldisilazane, hexamethyldioxane) onto the substrate S being heated. Agent.
於冷卻處理部1C內設置有兼作為基板S之冷卻機構之上述搬送輥14。亦即，冷卻處理部1C構成為利用自基板S至 搬送輥14之熱傳導來冷卻基板S，因此，冷卻處理部1C之搬送輥14與其它處理部1A、1B之搬送輥14不同，以藉由該熱傳導來有效地冷卻基板S之方式而構成該搬送輥14。關於該點將於後文中詳述。The conveyance roller 14 which serves as a cooling mechanism of the substrate S is provided in the cooling treatment portion 1C. That is, the cooling processing unit 1C is configured to be used from the substrate S to The heat transfer of the transport roller 14 cools the substrate S. Therefore, the transport roller 14 of the cooling processing unit 1C is different from the transport rollers 14 of the other processing units 1A and 1B, and the substrate S is efficiently cooled by the heat conduction to constitute the transport. Roller 14. This point will be detailed later.
根據上述構成，於該基板處理裝置中，藉由驅動搬送輥14而搬送基板S，同時於清洗處理部1A中，藉由對基板S實施刷洗、吹洗以及淋洗等而清洗基板S，於加熱處理部1B中，將基板S加熱至特定溫度(100℃~130℃)為止以除去基板S之水分，於冷卻處理部1C中，將基板S冷卻至特定溫度(常溫)為止。此後，依序對基板S實施光致抗蝕劑之塗布等基於光微影製程之剩餘處理。According to the above configuration, in the substrate processing apparatus, the substrate S is transported by driving the transport roller 14, and the substrate S is cleaned by brushing, purging, rinsing, or the like on the substrate S in the cleaning processing unit 1A. In the heat treatment unit 1B, the substrate S is heated to a specific temperature (100° C. to 130° C.) to remove the moisture of the substrate S, and the substrate S is cooled to a specific temperature (normal temperature) in the cooling treatment unit 1C. Thereafter, the remaining processing by the photolithography process, such as coating of the photoresist, is sequentially performed on the substrate S.
圖2係概略地表示冷卻處理部1C之搬送輥14之構造之剖面圖。如該圖所示，搬送輥14係貫通於其軸方向之中空形狀之輥，且整體藉由熱傳導性優異之金屬材料(鋁等)所構成。FIG. 2 is a cross-sectional view schematically showing the structure of the conveying roller 14 of the cooling treatment unit 1C. As shown in the figure, the conveyance roller 14 is a hollow-shaped roller that penetrates in the axial direction, and is entirely composed of a metal material (aluminum or the like) excellent in thermal conductivity.
搬送輥14之前後兩端(圖2中為左右兩端)經由形成於處理槽12之前後側板18、19上之開口部18a、19a而導出至處理槽12的外部，且***至分別與前後側板18、19之外側連接之機械室20中。於各機械室20內設置有支持構件22，上述搬送輥14之兩端部經由軸承24而支持於該等支持構件22，藉此，搬送輥14以可旋轉之方式受到支持。繼而，於搬送輥14之後端部分固定有滑輪15，於該滑輪15上架設有驅動帶2，藉此旋轉驅動搬送輥14。The front and rear ends (the left and right ends in FIG. 2) of the conveyance roller 14 are led out to the outside of the treatment tank 12 through the openings 18a and 19a formed in the front side plates 18 and 19 before the treatment tank 12, and are inserted into the front and rear, respectively. The outer sides of the side plates 18, 19 are connected to the machine room 20. A support member 22 is provided in each of the machine rooms 20, and both end portions of the transfer roller 14 are supported by the support members 22 via bearings 24, whereby the transfer rollers 14 are rotatably supported. Then, a pulley 15 is fixed to the end portion of the conveying roller 14, and a driving belt 2 is placed on the pulley 15, whereby the conveying roller 14 is rotationally driven.
於搬送輥14之內部，***有用以將冷卻水供給至該輥內 之軸狀之噴嘴26。該噴嘴26貫穿搬送輥14，且兩端部支持於各機械室20之側壁，藉此配置於搬送輥14之大致中心軸上。Inside the transfer roller 14, inserted to supply cooling water into the roller A shaft-shaped nozzle 26. The nozzle 26 penetrates the conveying roller 14, and both end portions are supported by the side walls of the respective machine chambers 20, and are disposed on the substantially central axis of the conveying roller 14.
於噴嘴26中，沿著其長度方向以特定間隔排列設置有複數個噴嘴口26a，如圖3所示，構成為朝搬送輥內周面之圓周方向上之特定部位(於圖示之示例中為朝下)噴灑自噴嘴26之一端側導入的冷卻水。噴嘴口26a遍布設置於搬送輥14中包含處理槽12之前後側壁間之區域(至少支持基板S之區域)上。In the nozzles 26, a plurality of nozzle openings 26a are arranged at predetermined intervals along the longitudinal direction thereof, and as shown in FIG. 3, are formed in a specific portion in the circumferential direction of the inner circumferential surface of the conveying roller (in the illustrated example) Cooling water introduced from one end side of the nozzle 26 is sprayed downward. The nozzle opening 26a is provided over a region (at least a region supporting the substrate S) provided between the rear side walls before the processing tank 12 in the conveying roller 14.
作為冷卻水係採用常溫之水。該冷卻水如圖2所示，藉由泵28之驅動而自貯水罐30供給至噴嘴26。再者，於該冷卻水之供給系統中，設置有包含控制其流量之電磁閥等之流量控制機構，於搬送輥14內，控制向所述噴嘴26供給之冷卻水之供給量，以於空間比率變大之範圍內將冷卻水供給至搬送輥14內。亦即，於本實施形態中，該供給系統以及所述噴嘴26等相當於本發明之液體供給機構。As the cooling water system, water of normal temperature is used. This cooling water is supplied from the water storage tank 30 to the nozzle 26 as shown in FIG. 2 by the driving of the pump 28. Further, in the cooling water supply system, a flow rate control mechanism including a solenoid valve for controlling the flow rate thereof is provided, and the supply amount of the cooling water supplied to the nozzle 26 is controlled in the transfer roller 14 to allow space Cooling water is supplied into the conveying roller 14 within a range in which the ratio becomes large. That is, in the present embodiment, the supply system, the nozzles 26, and the like correspond to the liquid supply mechanism of the present invention.
噴嘴26之噴嘴口26a例如形成為越遠離冷卻水之導入側(圖2中為左側)則口徑變得越大，藉此，以於整個長度方向上使冷卻水之噴出量大致均勻之方式而構成噴嘴26。The nozzle opening 26a of the nozzle 26 is formed, for example, so as to be larger in diameter from the introduction side (the left side in FIG. 2) of the cooling water, thereby making the discharge amount of the cooling water substantially uniform throughout the longitudinal direction. The nozzle 26 is formed.
再者，機械室20之內部經由形成於其下部之排氣口20a以及排氣通路，藉由未圖示之負壓泵等而受到負壓抽吸，藉此防止顆粒等經由開口部18a、19a自機械室20侵入至處理槽12，並且能夠對搬送輥14內部進行換氣。亦即，於本實施形態中，機械室20或負壓泵等相當於本發明之換氣機 構。Further, the inside of the machine room 20 is suctioned by a negative pressure pump (not shown) via an exhaust port 20a and an exhaust passage formed in the lower portion thereof, thereby preventing particles or the like from passing through the opening portion 18a. The 19a enters the processing tank 12 from the machine room 20, and the inside of the conveying roller 14 can be ventilated. That is, in the present embodiment, the machine room 20, the negative pressure pump, and the like correspond to the ventilator of the present invention. Structure.
藉由上述之構成，於冷卻處理部1C中，在搬送基板S之過程中，藉由搬送輥14而對基板S進行冷卻處理。亦即，於搬送基板S之過程中，藉由泵28之動作來將冷卻水供給至噴嘴26，藉此向搬送輥14的內周面噴灑冷卻水。因此，若於該狀態下，基板S於搬送輥14上移動，則藉由自基板S至搬送輥14之熱傳導而對基板S進行冷卻，冷卻水吸收搬送輥14之熱量，藉此對搬送輥14進行冷卻。亦即，進行此種熱傳遞之結果為基板S受到冷卻。According to the above configuration, in the cooling processing unit 1C, the substrate S is cooled by the transfer roller 14 during the conveyance of the substrate S. In other words, during the transfer of the substrate S, the cooling water is supplied to the nozzle 26 by the operation of the pump 28, whereby the cooling water is sprayed onto the inner circumferential surface of the conveying roller 14. Therefore, when the substrate S moves on the conveyance roller 14 in this state, the substrate S is cooled by heat conduction from the substrate S to the conveyance roller 14, and the cooling water absorbs the heat of the conveyance roller 14, thereby the conveyance roller 14 is cooled. That is, as a result of such heat transfer, the substrate S is cooled.
此時，搬入至冷卻處理部1C內之基板S處於100℃~130℃之高溫，因此搬送輥14亦成為接近於此之溫度。因此，如上所述，若於空間比率變大之範圍內，將常溫之冷卻水供給至搬送輥14，則該冷卻水會迅速地氣化，搬送輥14之熱量以此方式作為冷卻水之氣化熱量而受到消耗，藉此可有效地對搬送輥14進行冷卻。尤其於該情形時，冷卻水會沿著搬送輥14之內周面而於圓周方向上移動，從而液膜化或者液滴化，藉此冷卻水之表面積(氣液界面之面積)增大。因此，促進冷卻水之氣化(蒸發)，從而能夠有效地對搬送輥14進行冷卻。At this time, since the substrate S carried into the cooling processing unit 1C is at a high temperature of 100° C. to 130° C., the transfer roller 14 also has a temperature close to this. Therefore, as described above, when the cooling water of normal temperature is supplied to the conveying roller 14 within a range in which the space ratio is increased, the cooling water is rapidly vaporized, and the heat of the conveying roller 14 is used as the cooling water gas in this manner. The heat is consumed and the transfer roller 14 is effectively cooled. In particular, in this case, the cooling water moves in the circumferential direction along the inner circumferential surface of the conveying roller 14, thereby liquidizing or dropletizing, whereby the surface area of the cooling water (the area of the gas-liquid interface) is increased. Therefore, the vaporization (evaporation) of the cooling water is promoted, so that the conveying roller 14 can be efficiently cooled.
再者，以上述方式於搬送輥14內產生之蒸氣伴隨機械室20內部之負壓抽吸(對搬送輥14內進行換氣)而朝搬送輥14之外部移動，並且經由所述排氣口20a而排出至外部。因此，防止搬送輥14內部因蒸氣而成為飽和狀態，藉此促進搬送輥14內之冷卻水之氣化。繼而，以上述方式促進冷卻 水之氣化之結果為如上所述之熱傳遞順利地進行，藉此良好地對搬送中之基板S進行冷卻。In addition, the steam generated in the conveyance roller 14 as described above is moved toward the outside of the conveyance roller 14 by the suction under the negative pressure inside the machine room 20 (air exchange in the conveyance roller 14), and via the exhaust port. 20a is discharged to the outside. Therefore, the inside of the conveyance roller 14 is prevented from being saturated by the steam, and the vaporization of the cooling water in the conveyance roller 14 is accelerated. And then promote cooling in the above manner As a result of the gasification of water, the heat transfer as described above is smoothly performed, whereby the substrate S being conveyed is satisfactorily cooled.
再者，於如上所述之冷卻處理部1C中，即使於搬入基板S之前，亦驅動搬送輥14並將冷卻水導入至其內部，進而藉由對搬送輥14內進行換氣而有效地冷卻搬送輥14。亦即，於該情形時，由於冷卻水沿著輥內周面移動而液膜化或者液滴化，藉此冷卻水之表面積增大，因此，藉由此種冷卻水之表面積增大與上述換氣之相互作用而促進冷卻水之氣化，其結果，有效地對搬送輥14進行冷卻。因此，能夠有效地冷卻搬送輥14。Further, in the cooling processing unit 1C as described above, the transfer roller 14 is driven to introduce the cooling water into the inside of the cooling processing unit 1C, and is effectively cooled by ventilating the inside of the conveying roller 14. Transfer roller 14. That is, in this case, since the cooling water moves along the inner circumferential surface of the roller to be liquid-filmed or dropletized, whereby the surface area of the cooling water is increased, and therefore, the surface area of the cooling water is increased as described above. The gas exchange promotes vaporization of the cooling water, and as a result, the conveying roller 14 is effectively cooled. Therefore, the conveyance roller 14 can be cooled efficiently.
如上所述，上所述冷卻處理部1C之構成係將常溫之冷卻水導入至搬送輥14內並使其氣化，從而藉由吸收氣化熱來冷卻搬送輥14，根據該構成，能夠以較少之水量來有效地冷卻搬送輥14，而無需使用製冷劑事先對冷卻水進行冷卻。而且，由於構成為直接將在搬送輥14內氣化(蒸發)之蒸氣排出至外部，因此無需使冷卻水相對於搬送輥14循環之設備，進而，雖然將冷卻水導入至搬送輥14內，但是無需用於防止液體自搬送輥洩漏之嚴密之密封構造。As described above, the cooling treatment unit 1C is configured to introduce the cooling water at normal temperature into the conveying roller 14 and vaporize it, thereby cooling the conveying roller 14 by absorbing the heat of vaporization, and according to this configuration, The amount of water is reduced to effectively cool the conveying roller 14 without previously cooling the cooling water using a refrigerant. In addition, since the vapor that is vaporized (evaporated) in the conveyance roller 14 is directly discharged to the outside, the apparatus for circulating the cooling water to the conveyance roller 14 is not required, and further, the cooling water is introduced into the conveyance roller 14 However, there is no need for a tight sealing structure for preventing liquid from leaking from the conveying roller.
因此，雖然利用自基板S至搬送輥14之熱傳導而有效地冷卻基板S，但與先前之此種裝置相比，具有能夠以價格更低廉之構成來高效率地冷卻基板S之效果，先前之此種裝置係使冷卻水以密封不漏液之狀態於搬送輥內循環來冷卻該輥，或者將冷氣噴射至搬送輥來冷卻該輥。Therefore, although the substrate S is effectively cooled by heat conduction from the substrate S to the transfer roller 14, it has an effect of being able to efficiently cool the substrate S at a lower cost than the conventional device. In such a device, the cooling water is circulated in the conveying roller in a state of being sealed and not leaking to cool the roller, or the cold air is sprayed to the conveying roller to cool the roller.
再者，以上所說明之冷卻處理部1C係本發明之基板冷卻 裝置(實施本發明之基板冷卻方法之基板冷卻裝置)之較佳實施形態的一例，其具體構成於不脫離本發明之宗旨之範圍內可適當地變更。例如，亦可適用以下之構成。Furthermore, the cooling treatment unit 1C described above is the substrate cooling of the present invention. An example of a preferred embodiment of the apparatus (the substrate cooling apparatus for carrying out the substrate cooling method of the present invention) can be appropriately modified without departing from the scope of the invention. For example, the following constitution can also be applied.
例如，於上述實施形態中，採用越遠離冷卻水之導入側(圖2中為左側)則噴嘴口26a之口徑變得越大之構造，以使冷卻水於噴嘴26之整個長度方向上之噴出量大致均勻，但除此之外，如圖4所示，亦能夠採用例如噴嘴口26a之口徑均勻，且越遠離冷卻水之導入側則直徑尺寸越小之噴嘴構造。於該構成之情形時，能夠使冷卻水之噴出量於噴嘴26之整個長度方向上均勻。總之，只要能夠於長度方向上使冷卻水之噴出量均勻，則噴嘴26的構造可採用任何構造。再者，於上述實施形態中，對自噴嘴26之長度方向一方側導入冷卻水之示例進行了說明，但於自噴嘴26之兩端導入冷卻水之情形時，可依照圖2或圖3之構造，採用使冷卻水之噴出量於噴嘴26之整個長度方向上均勻之噴嘴構造。For example, in the above-described embodiment, the structure in which the diameter of the nozzle opening 26a becomes larger as the distance from the introduction side (the left side in FIG. 2) of the cooling water is increased, so that the cooling water is ejected over the entire length direction of the nozzle 26. In addition, as shown in FIG. 4, for example, it is also possible to adopt a nozzle structure in which the diameter of the nozzle opening 26a is uniform and the diameter is smaller as it is farther from the introduction side of the cooling water. In the case of this configuration, the discharge amount of the cooling water can be made uniform over the entire longitudinal direction of the nozzle 26. In short, the configuration of the nozzle 26 can adopt any configuration as long as the discharge amount of the cooling water can be made uniform in the longitudinal direction. In the above embodiment, an example in which the cooling water is introduced from one side in the longitudinal direction of the nozzle 26 has been described. However, when cooling water is introduced from both ends of the nozzle 26, it can be in accordance with FIG. 2 or FIG. The configuration is such that a nozzle structure in which the discharge amount of the cooling water is uniform over the entire length of the nozzle 26 is employed.
又，於上述實施形態中，將作為冷卻水之常溫之水供給至噴嘴26，但只要不妨礙事先對冷卻水進行冷卻之構成，亦可於冷卻水之供給系統中，組裝對自貯水罐30供給之水進行冷卻的冷卻裝置。即使為如此地事先對冷卻水進行冷卻之構成，如上所述，由於冷卻處理部1C係於空間比率變大之範圍內，將冷卻水供給至搬送輥14內之構成，故而與使冷卻水於搬送輥內循環之一般之構成相比，亦即，與使冷卻水以密封不漏液之狀態於搬送輥內循環來冷卻該輥的先前裝置相比，供給至搬送輥14之冷卻水之水量少，且對 冷卻水進行冷卻所需之製冷劑的量較少即可。因此，與先前之裝置相比，用於對冷卻水進行冷卻之運行成本低，藉此能夠以低成本來對基板S進行冷卻。Further, in the above-described embodiment, the water of the normal temperature as the cooling water is supplied to the nozzle 26. However, the self-storage tank 30 may be assembled in the cooling water supply system as long as it does not hinder the cooling of the cooling water. A cooling device that supplies water for cooling. In the configuration in which the cooling water is cooled in advance as described above, the cooling treatment unit 1C is configured to supply the cooling water to the conveying roller 14 in a range in which the space ratio is increased as described above. The amount of cooling water supplied to the conveying roller 14 is lower than that of the conventional device in which the cooling water is circulated in the conveying roller to cool the roller in a state in which the cooling water is sealed without leaking. Less, and right The amount of refrigerant required to cool the cooling water is small. Therefore, the operation cost for cooling the cooling water is lower than that of the prior device, whereby the substrate S can be cooled at a low cost.
又，於上述實施形態中，藉由對機械室20內進行抽吸排氣，而促進於搬送輥14內產生之蒸氣排出至外部，以此方式來構成本發明之換氣機構，但換氣機構之構成並不限定於此。例如，亦可構成為如下：進一步於搬送輥14之一端側設置送風機等，強制性地將空氣吹入至搬送輥14內，藉此促進蒸氣排出至外部。Further, in the above-described embodiment, the ventilation of the inside of the machine room 20 is promoted, and the steam generated in the conveyance roller 14 is promoted to the outside, thereby constituting the ventilation mechanism of the present invention, but the ventilation is performed. The constitution of the organization is not limited to this. For example, a blower or the like may be provided on one end side of the conveying roller 14, and air may be forcibly blown into the conveying roller 14, thereby promoting the discharge of the steam to the outside.
又，於上述實施形態中，將基板S以水平姿勢搬送並進行冷卻，當然，亦可將基板S以傾斜姿勢(於與搬送方向正交之方向上，自其一方側朝另一側傾斜之姿勢)搬送並進行冷卻。於該情形時，可構成為如下：設置將冷卻水供給至搬送輥14的上位側之端部之噴嘴，以代替例如貫穿搬送輥14之如實施形態般之噴嘴26，使冷卻水沿著搬送輥14之內底面自其上位側流下。根據該構成，冷卻水於搬送輥14內部流下時，會自搬送輥14吸收氣化熱而氣化，因此能夠與水平地搬送基板S之情形相同地對搬送輥14進行冷卻。再者，如上所述，於使冷卻水沿著搬送輥14流下之情形時，亦可設置排出機構，排出機構於搬送輥14的端部接受未氣化而流下之冷卻水，並將該冷卻水排出至外部。此構成亦能夠用於上述實施形態之構成中。Further, in the above-described embodiment, the substrate S is conveyed and cooled in a horizontal posture. Of course, the substrate S may be tilted (in a direction orthogonal to the conveyance direction, inclined from one side to the other side) Position) Transfer and cool. In this case, it is possible to provide a nozzle that supplies cooling water to the end portion of the upper side of the conveying roller 14 instead of, for example, the nozzle 26 that penetrates the conveying roller 14 as in the embodiment, and transports the cooling water along the cooling water. The inner bottom surface of the roller 14 flows down from its upper side. According to this configuration, when the cooling water flows down inside the conveyance roller 14, the vaporization heat is absorbed from the conveyance roller 14 and vaporized, so that the conveyance roller 14 can be cooled in the same manner as the case where the substrate S is conveyed horizontally. Further, as described above, when the cooling water flows down the conveying roller 14, a discharge mechanism may be provided, and the discharge mechanism receives the cooling water that has not flowed and is discharged at the end of the conveying roller 14, and cools the cooling water. The water is drained to the outside. This configuration can also be applied to the configuration of the above embodiment.
1A‧‧‧清洗處理部1A‧‧‧Washing and Processing Department
1B‧‧‧加熱處理部1B‧‧‧Heating treatment department
1C‧‧‧冷卻處理部1C‧‧‧Cooling and Processing Department
10~12‧‧‧處理槽10~12‧‧‧Processing tank
14‧‧‧搬送輥14‧‧‧Transport roller
26‧‧‧噴嘴26‧‧‧Nozzles
30‧‧‧貯水罐30‧‧‧Water storage tank
S‧‧‧基板S‧‧‧Substrate
圖1係表示組裝有本發明之基板冷卻裝置(使用本發明之 基板冷卻方法之基板冷卻裝置)之基板處理裝置之主要部分的剖面示意圖。1 is a view showing a substrate cooling device incorporating the present invention (using the present invention) A schematic cross-sectional view of a main part of a substrate processing apparatus of a substrate cooling device of a substrate cooling method.
圖2係表示冷卻處理部(本發明之基板冷卻裝置)之構成的剖面圖(圖1之A－A線剖面圖)。Fig. 2 is a cross-sectional view showing a configuration of a cooling treatment unit (substrate cooling device of the present invention) (cross-sectional view taken along line A-A in Fig. 1).
圖3係搬送輥之剖面圖。Figure 3 is a cross-sectional view of the conveying roller.
圖4係表示搬送輥之其它構成之剖面圖。Fig. 4 is a cross-sectional view showing another configuration of the conveying roller.
1C‧‧‧冷卻處理部1C‧‧‧Cooling and Processing Department
2‧‧‧驅動帶2‧‧‧ drive belt
12‧‧‧處理槽12‧‧‧Processing tank
14‧‧‧搬送輥14‧‧‧Transport roller
15‧‧‧滑輪15‧‧‧ pulley
18、19‧‧‧前後側板18, 19‧‧‧ front and rear side panels
18a、19a‧‧‧開口部18a, 19a‧‧‧ openings
20‧‧‧機械室20‧‧‧ machine room
20a‧‧‧排氣口20a‧‧‧Exhaust port
22‧‧‧支持構件22‧‧‧Support components
24‧‧‧軸承24‧‧‧ bearing
26‧‧‧噴嘴26‧‧‧Nozzles
28‧‧‧泵28‧‧‧ pump
30‧‧‧貯水罐30‧‧‧Water storage tank
S‧‧‧基板S‧‧‧Substrate
Claims (7)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007268946A JP2009099721A (en) | 2007-10-16 | 2007-10-16 | Method of cooling substrate and apparatus of cooling substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200919615A TW200919615A (en) | 2009-05-01 |
| TWI387041B true TWI387041B (en) | 2013-02-21 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097131017A TWI387041B (en) | 2007-10-16 | 2008-08-14 | Substrate cooling method and substrate cooling device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2009099721A (en) |
| KR (1) | KR101022089B1 (en) |
| CN (1) | CN101414546B (en) |
| TW (1) | TWI387041B (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011086713A1 (en) | 2010-01-15 | 2011-07-21 | 京進工業株式会社 | Heat exchanger manufacturing apparatus |
| JP5762704B2 (en) | 2010-08-20 | 2015-08-12 | 東京エレクトロン株式会社 | Substrate processing apparatus and temperature control method |
| JP5896549B2 (en) * | 2011-07-20 | 2016-03-30 | 株式会社ダイヘン | COOLING UNIT AND WORK CONVEYING DEVICE USING THE SAME |
| DE102011082334B4 (en) * | 2011-09-08 | 2017-01-26 | Von Ardenne Gmbh | Substrate treatment plant |
| CN103187340B (en) * | 2011-12-28 | 2016-08-03 | 斯克林集团公司 | Substrate board treatment and substrate processing method using same |
| KR101665763B1 (en) * | 2014-08-11 | 2016-10-13 | 주식회사 포스코 | Roller conveyor |
| CN106041331B (en) * | 2016-06-21 | 2018-10-02 | 昆山国显光电有限公司 | a kind of OLED substrate cooling system |
| KR20220098492A (en) * | 2021-01-04 | 2022-07-12 | 주식회사 엘지에너지솔루션 | Electrode rolling apparatus and electrode rolling method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW480580B (en) * | 1999-12-24 | 2002-03-21 | Ebara Corp | Method and apparatus for treating semiconductor substrate |
| TW502130B (en) * | 1997-06-17 | 2002-09-11 | Toshiba Corp | Cleaning method of substrate |
| TW200600323A (en) * | 2004-01-16 | 2006-01-01 | Nippon Steel Chemical Co | Hot press roll |
| TW200640679A (en) * | 2005-03-23 | 2006-12-01 | Fuji Photo Film Co Ltd | Method of and apparatus for laminated substrate assembly |
| TWI284922B (en) * | 2002-11-15 | 2007-08-01 | Tokyo Electron Ltd | Developing method and apparatus |
| TWI343764B (en) * | 2006-02-20 | 2011-06-11 | Saian Corp |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0790354A (en) * | 1993-09-21 | 1995-04-04 | Kawasaki Steel Corp | Roll for transporting high-temperature steel products |
| JPH07133126A (en) * | 1993-11-01 | 1995-05-23 | Asahi Glass Co Ltd | Conveyor roll of glass heating furnace |
| JP2000302468A (en) | 1999-04-19 | 2000-10-31 | Asahi Glass Co Ltd | Glass pane-carrying roll structure in glass pane-heating furnace |
| JP3899305B2 (en) | 2002-10-31 | 2007-03-28 | 松下電器産業株式会社 | Substrate cooling apparatus and method for PDP |
-
2007
- 2007-10-16 JP JP2007268946A patent/JP2009099721A/en active Pending
-
2008
- 2008-08-14 TW TW097131017A patent/TWI387041B/en not_active IP Right Cessation
- 2008-09-18 CN CN2008101490106A patent/CN101414546B/en not_active Expired - Fee Related
- 2008-09-22 KR KR1020080092579A patent/KR101022089B1/en not_active IP Right Cessation
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW502130B (en) * | 1997-06-17 | 2002-09-11 | Toshiba Corp | Cleaning method of substrate |
| TW480580B (en) * | 1999-12-24 | 2002-03-21 | Ebara Corp | Method and apparatus for treating semiconductor substrate |
| TWI284922B (en) * | 2002-11-15 | 2007-08-01 | Tokyo Electron Ltd | Developing method and apparatus |
| TW200600323A (en) * | 2004-01-16 | 2006-01-01 | Nippon Steel Chemical Co | Hot press roll |
| TW200640679A (en) * | 2005-03-23 | 2006-12-01 | Fuji Photo Film Co Ltd | Method of and apparatus for laminated substrate assembly |
| TWI343764B (en) * | 2006-02-20 | 2011-06-11 | Saian Corp |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009099721A (en) | 2009-05-07 |
| TW200919615A (en) | 2009-05-01 |
| CN101414546B (en) | 2011-12-21 |
| KR20090038807A (en) | 2009-04-21 |
| KR101022089B1 (en) | 2011-03-17 |
| CN101414546A (en) | 2009-04-22 |
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