TWI380963B - Method for processing brittle material substrates - Google Patents
Method for processing brittle material substrates Download PDFInfo
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- TWI380963B TWI380963B TW098111344A TW98111344A TWI380963B TW I380963 B TWI380963 B TW I380963B TW 098111344 A TW098111344 A TW 098111344A TW 98111344 A TW98111344 A TW 98111344A TW I380963 B TWI380963 B TW I380963B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
- B23K26/146—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor the fluid stream containing a liquid
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B33/00—Severing cooled glass
- C03B33/07—Cutting armoured, multi-layered, coated or laminated, glass products
- C03B33/074—Glass products comprising an outer layer or surface coating of non-glass material
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B33/00—Severing cooled glass
- C03B33/09—Severing cooled glass by thermal shock
- C03B33/091—Severing cooled glass by thermal shock using at least one focussed radiation beam, e.g. laser beam
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B33/00—Severing cooled glass
- C03B33/10—Glass-cutting tools, e.g. scoring tools
- C03B33/105—Details of cutting or scoring means, e.g. tips
- C03B33/107—Wheel design, e.g. materials, construction, shape
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133351—Manufacturing of individual cells out of a plurality of cells, e.g. by dicing
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- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Thermal Sciences (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
- Liquid Crystal (AREA)
Description
本發明係關於一種脆性材料基板之加工方法，係對脆性材料基板掃描雷射以進行局部加熱，其次沿加熱部位進行冷卻，藉此利用於基板表面與基板內部之間產生的熱應力形成有限深度之裂痕。本發明係關於下述之脆性材料基板之加工方法，沿設定於基板之劃線預定線照射第一次之雷射光束，於基板上形成由有限深度之裂痕構成的劃線，其次照射第2次之雷射光束，以使劃線更深地滲透或完全地斷開。The invention relates to a method for processing a brittle material substrate, which is to scan a laser for a brittle material substrate for local heating, and secondly to cool along a heating portion, thereby utilizing thermal stress generated between the substrate surface and the substrate to form a limited depth. Cracks. The present invention relates to a method for processing a brittle material substrate, which irradiates a first laser beam along a predetermined line of a scribe line set on a substrate, forms a scribe line formed by a crack of a limited depth on the substrate, and secondly irradiates the second The laser beam is so second that the scribe line penetrates deeper or is completely broken.
此處之脆性材料基板係指玻璃基板、燒結材料之陶瓷、單結晶矽、半導體晶圓、藍寶石基板、陶瓷基板等。The brittle material substrate herein refers to a glass substrate, a ceramic of a sintered material, a single crystal germanium, a semiconductor wafer, a sapphire substrate, a ceramic substrate, or the like.
若使用對玻璃基板等之脆性材料基板照射雷射光束、掃描形成於基板上之光束點進行線狀加熱並進而在加熱後立即噴吹冷媒以使其冷卻的雷射劃線加工方法，即能使碎屑之產生較使用刀輪等機械式加工更為減低，且能提升端面強度。A laser scribing method for irradiating a laser beam such as a glass substrate with a laser beam, scanning a beam spot formed on the substrate, heating the wire, and then blowing the refrigerant to cool it immediately after heating The generation of debris is reduced more than mechanical machining such as using a cutter wheel, and the strength of the end face can be improved.
因此，在分割以平面面板顯示器為首之玻璃基板等所需的各種製程中，係採用雷射劃線加工。Therefore, in various processes required for dividing a glass substrate such as a flat panel display, laser scribing is used.
一般而言，雷射劃線加工中，係設定欲從該處分割之假想線(稱為劃線預定線)。接著，藉由刀輪等於劃線預定線之開始端即基板端形成初期龜裂，從形成於開始端之初期龜裂的位置沿劃線預定線掃描光束點及冷卻點(噴射冷媒之區域)。此時，在基於劃線預定線附近所產生之溫度分布而產生應力梯度的結果，即會形成線狀之裂痕(參照專利文獻1、專利文獻2、專利文獻3)。In general, in the laser scribing process, an imaginary line (referred to as a scribe line) to be divided therefrom is set. Then, an initial crack is formed by the cutter wheel being equal to the start end of the predetermined line of the scribe line, and the beam spot and the cooling point (the area of the jet refrigerant) are scanned along the predetermined line of the scribe line from the position of the initial crack formed at the start end. . At this time, as a result of the stress gradient generated in the vicinity of the predetermined line of the scribe line, a linear crack is formed (see Patent Document 1, Patent Document 2, and Patent Document 3).
此外，藉由對脆性材料基板掃描雷射光束而形成之線狀裂痕中，有裂痕之深度方向之前端未到達基板背面之「有限深度之裂痕」、以及裂痕到達基板背面而使基板一次斷開的「貫通裂痕」(參照例如專利文獻2)。Further, in the linear crack formed by scanning the laser beam on the brittle material substrate, the front end in the depth direction of the crack does not reach the "crack of a limited depth" on the back surface of the substrate, and the crack reaches the back surface of the substrate to break the substrate once. "through crack" (see, for example, Patent Document 2).
藉由前者之「有限深度之裂痕」而形成之切痕稱為劃線，後者之貫通裂痕之分割線稱為全割斷線。此等係藉由不同之方式形成。The cut formed by the former "crack of limited depth" is called a scribe line, and the dividing line of the latter through the crack is called a full cut line. These are formed in different ways.
圖7係以示意方式顯示形成有限深度之方式之基板的截面圖。亦即，藉由先進行之雷射加熱，而如圖7(a)所示於基板GA產生壓縮應力HR。其次，藉由加熱後之冷卻，而如圖7(b)所示於基板表面產生拉伸應力CR。此時因熱之移動而使壓縮硬力HR於基板內部移動，而形成內部之應力場Hin。其結果，即如圖7(c)所示，產生深度方向之應力梯度，而形成裂痕Cr。Figure 7 is a cross-sectional view showing the substrate in a manner of forming a finite depth in a schematic manner. That is, the compressive stress HR is generated on the substrate GA as shown in Fig. 7(a) by the laser heating performed first. Next, by the cooling after heating, a tensile stress CR is generated on the surface of the substrate as shown in Fig. 7(b). At this time, the compressive hard force HR moves inside the substrate due to the movement of heat, and the internal stress field Hin is formed. As a result, as shown in FIG. 7(c), a stress gradient in the depth direction is generated to form a crack Cr.
藉由上述方式形成裂痕Cr的條件中，需為了阻止存在於基板內部之壓縮應力場Hin往裂痕Cr之深度方向進一步滲透，裂痕Cr係在基板內部之壓縮應力場Hin前停止，原理上裂痕Cr即形成有限深度。因此，為了使基板完全斷開，在形成裂痕Cr之有限深度之劃線後，必須進一步進行裂斷處理。另一方面，裂痕Cr之劃線之加工端面非常漂亮(表面凹凸小)且直進性優異，作為加工端面為理想狀態。In the condition of forming the crack Cr by the above method, in order to prevent the compressive stress field Hin existing inside the substrate from further penetrating into the depth direction of the crack Cr, the crack Cr stops before the compressive stress field Hin inside the substrate, in principle, the crack Cr That is, a limited depth is formed. Therefore, in order to completely break the substrate, it is necessary to further perform the cracking treatment after forming the scribe line having the finite depth of the crack Cr. On the other hand, the processed end surface of the crease of the crack Cr is very beautiful (the surface unevenness is small) and the straightness is excellent, and it is an ideal state as a machined end surface.
圖8係以示意方式顯示形成貫通裂痕之方式之基板的立體圖(圖8(a))與俯視圖(圖8(b))。亦即藉由從初期龜裂TR之位置掃描之雷射光束之光束點BS，使基板表面產生壓縮應力HR。同時，藉由位於光束點BS後方之冷卻點CS，使基板表面產生拉伸應力CR。其結果，於掃描線上(劃線預定線L上)形成前後方向之應力梯度，藉由此應力梯度，產生沿掃描線方向使基板左右裂開之力量，而形成貫通裂痕，藉以使基板斷開。Fig. 8 is a perspective view (Fig. 8(a)) and a plan view (Fig. 8(b)) showing a substrate in which a through crack is formed in a schematic manner. That is, the compressive stress HR is generated on the surface of the substrate by the beam spot BS of the laser beam scanned from the position of the initial crack TR. At the same time, a tensile stress CR is generated on the surface of the substrate by the cooling point CS located behind the beam spot BS. As a result, a stress gradient in the front-rear direction is formed on the scanning line (on the predetermined line L), and the stress gradient causes a force to crack the left and right sides of the substrate in the scanning line direction to form a through crack, thereby breaking the substrate. .
形成此「貫通裂痕」之情形，具有在不進行裂斷處理之情況下即能使基板斷開(全切斷)的優點，依加工用途之不同雖亦有使用此方式之斷開較佳的情形，然而與上述劃線之加工端面相較，有時會有全切斷線之加工端面之直進性受損的情形，又，全切斷線之端面之漂亮程度(表面之凹凸)與上述劃線相較其品質亦較差。In the case of forming such a "through crack", there is an advantage that the substrate can be broken (completely cut) without performing a cracking treatment, and it is preferable to use this method for disconnection depending on the processing application. In other cases, compared with the processed end face of the above-mentioned scribing, there is a case where the straightness of the processed end face of the full cut line is impaired, and the degree of beauty of the end face of the full cut line (surface irregularity) is as described above. The dash is also inferior to its quality.
此外，藉由雷射劃線加工形成劃線或全切斷線，係取決於加熱條件(雷射波長、照射時間、輸出功率、掃描速度等)、冷卻條件(冷媒溫度、噴吹量、噴吹位置等)、基板之板厚等。一般而言，玻璃基板之板厚較薄之情形與較厚之情形相較，較容易成為全切斷線，能形成劃線之加工條件之製程容許度較為狹窄。又，有越是急遽加熱基板或急遽冷卻基板之越極端的條件，即越容易形成全切斷線之傾向。In addition, the scribing or full cutting line is formed by laser scribing, depending on heating conditions (laser wavelength, irradiation time, output power, scanning speed, etc.), cooling conditions (refrigerant temperature, blowing amount, spray) Blowing position, etc.), the thickness of the substrate, and the like. In general, when the thickness of the glass substrate is thin, it is easier to become a full cutting line than the thicker one, and the process tolerance for forming the processing conditions of the scribe line is relatively narrow. Further, the more extreme the conditions of heating the substrate or rapidly cooling the substrate, the more likely the formation of the full cutting line is.
基於上述情事，當欲對玻璃基板等進行端面品質優異之分割加工時，係選擇不形成全切斷線而形成劃線之方式的加熱條件、冷卻條件進行雷射劃線，其後進行裂斷處理。In the case where the glass substrate or the like is to be subjected to a division process excellent in the end surface quality, the heating condition and the cooling condition in which the entire line is not formed are selected, and the laser scribing is performed, and then the cracking is performed. deal with.
在雷射劃線加工後進行之裂斷處理方法，有利用機械式之裂斷處理，亦即將裂斷具等緊壓於劃線以施加彎曲力矩。在機械式裂斷處理之情形，當對基板施加較大之彎曲力矩時即會產生碎屑。因此，在須避免碎屑產生之製程中，需儘可能地形成深劃線，並僅施加較小彎曲力矩來進行裂斷處理。In the cracking treatment method after the laser scribing process, there is a mechanical cracking treatment, that is, a cracking tool or the like is pressed against the scribing to apply a bending moment. In the case of mechanical rupture treatment, debris is generated when a large bending moment is applied to the substrate. Therefore, in the process of avoiding the generation of debris, it is necessary to form a deep scribe line as much as possible, and only apply a small bending moment to perform the cleavage treatment.
因此，以往係進行以下之雷射裂斷處理：沿透過雷射劃線加工形成之劃線進行第二次之雷射照射，使有限深度之裂痕更深地滲透(此時係進行再度裂斷處理)或使裂痕滲透至背面以使其斷開(參照例如專利文獻1～專利文獻3)。Therefore, in the past, the following laser cracking treatment was performed: the second laser irradiation was performed along the scribe line formed by laser scribing, so that the crack of the finite depth penetrated deeper (in this case, the crack is further broken). Or the crack is infiltrated into the back surface to be broken (see, for example, Patent Documents 1 to 3).
專利文獻1：日本特開2001-130921號公報Patent Document 1: Japanese Laid-Open Patent Publication No. 2001-130921
專利文獻2：日本特開2006-256944號公報Patent Document 2: Japanese Laid-Open Patent Publication No. 2006-256944
專利文獻3：WO2003/008352號公報Patent Document 3: WO2003/008352
如上述，藉由第1次之雷射照射進行用以形成劃線之雷射劃線加工，其次藉由第2次之雷射照射進行雷射裂斷處理，即能實現可抑制碎屑產生之斷開加工。然而，當雷射劃線加工、亦即藉由第1次之雷射照射而形成之劃線較淺時，即難以藉由其後之雷射裂斷處理使裂痕到達基板背面。因此，欲藉由雷射裂斷處理使基板完全地斷開，須在雷射劃線加工時先形成較深之劃線。As described above, the laser scribing process for forming the scribe line is performed by the first laser irradiation, and the laser rupture process is performed by the second laser irradiation, thereby suppressing the generation of debris. Disconnected processing. However, when the laser scribing process, that is, the scribing formed by the first laser irradiation, is shallow, it is difficult to cause the crack to reach the back surface of the substrate by the subsequent laser chipping process. Therefore, in order to completely break the substrate by the laser cracking process, a deeper scribe line must be formed first during the laser scribing process.
又，即使透過雷射裂斷處理不完全使基板斷開的情形，在雷射劃線加工先形成較深之劃線，亦能在其後之雷射裂斷處理中較容易地形成更深之劃線，因此非常理想。Moreover, even if the substrate is not completely broken by the laser rupture process, a deep scribe line is formed in the laser scribing process, and it is easier to form a deeper in the subsequent laser rupture process. Dashing is therefore ideal.
此外，當欲藉由雷射劃線加工形成較以往技術深之劃線，則須變更以往形成劃線時之加熱條件或冷卻條件。具體而言，需提高雷射輸出以增大加熱之熱輸入量，或增大冷卻時之冷媒噴吹量，設定成較以往更容易產生深度方向之溫度差的極端條件，以增大於基板產生之深度方向的應力梯度。Further, when it is desired to form a deep scribe line which is deeper than the prior art by laser scribing, it is necessary to change the heating condition or the cooling condition in the case where the scribe line is conventionally formed. Specifically, it is necessary to increase the laser output to increase the heat input amount of heating, or increase the amount of refrigerant sprayed during cooling, and set an extreme condition that is more likely to generate a temperature difference in the depth direction than in the past, so as to increase the substrate generation. The stress gradient in the depth direction.
然而，若按照以往雷射劃線加工之加工步驟，移行至增大應力梯度之加熱條件、冷卻條件，即無法藉由第1次之雷射照射形成較深的劃線，反倒是裂痕會貫通基板(移行至形成貫通裂痕之方式)，而形成全切斷線。亦即，藉由適當地選擇雷射劃線加工時之加熱條件或冷卻條件雖能較容易地形成淺劃線，然而即使欲形成較深劃線，而將加熱條件或冷卻條件變更為較以往所使用之條件稍微極端的條件，即會有可供設定之加熱條件或冷卻條件之範圍不存在或即使存在但可供設定之範圍(製程容許度)亦狹窄而不穩定，導致突然移行至形成全切斷線的條件，而難以形成所欲之較深劃線。However, according to the processing steps of the conventional laser scribing process, the heating conditions and the cooling conditions for increasing the stress gradient are not able to form a deep scribe line by the first laser irradiation, but the crack is penetrated. The substrate (moving to form a through crack) forms a full cut line. That is, although the light gradation line can be easily formed by appropriately selecting the heating condition or the cooling condition at the time of laser scribing processing, even if a deep scribe line is to be formed, the heating condition or the cooling condition is changed to be more conventional. The conditions used are slightly extreme, that is, the range of heating conditions or cooling conditions that can be set does not exist or the range (process tolerance) that can be set even if it exists is narrow and unstable, resulting in sudden migration to formation. It is difficult to form the desired deep scribe line by completely cutting the condition of the line.
再者，除了移行至全切斷線之問題以外，亦會產生易產生「先行」現象的問題。所謂「先行」，係指圖9所示，在劃線預定線L之開始端附近，形成於開始端之初期龜裂TR被光束點BS加熱時，在以光束點BS之加熱區域為起點朝向光束點前方之無法控制的方向形成裂痕K的現象。當產生「先行」現象時，即無法形成沿著劃線預定線L之劃線，劃線之直進性顯著受損。Furthermore, in addition to the problem of moving to the full cut line, problems arise that are prone to "first move". In the vicinity of the start end of the scribe line L, the initial crack TR formed by the beam spot BS is heated in the vicinity of the start end of the scribe line L, and the heating region of the beam spot BS is used as a starting point. The phenomenon of crack K is formed in an uncontrollable direction in front of the beam spot. When the "first" phenomenon occurs, the scribe line along the predetermined line L of the scribe line cannot be formed, and the straightness of the scribe line is significantly impaired.
在欲形成較深劃線而將加熱條件或冷卻條件調整至較以往更極端之加熱條件或冷卻條件時，上述「先行」現象產生之頻率亦增高。When the deeper scribe line is to be formed and the heating condition or the cooling condition is adjusted to a more extreme heating condition or cooling condition than before, the frequency of the above-mentioned "preemptive" phenomenon is also increased.
因此，本發明之第1目的在於，提供能將有限深度之劃線所構成的劃線形成為較習知技術具有充分深度的加工方法。Accordingly, a first object of the present invention is to provide a processing method capable of forming a scribe line formed by a scribe line having a limited depth to have a sufficient depth from a conventional technique.
又，第2目的在於，提供非透過全切斷線、而係能擴大能形成劃線之加熱條件或冷卻條件的製程容許度，能穩定地形成劃線的加工方法。In addition, a second object of the present invention is to provide a processing method capable of stably forming a scribe line by providing a process tolerance that can form a heating condition or a cooling condition in which a scribe line can be formed without a full cut line.
又，第3目的在於，提供不易產生「先行」現象之劃線的加工方法。Further, a third object is to provide a processing method which is difficult to generate a "first" phenomenon.
又，本發明之目的在於提供一種脆性材料基板之加工方法，其能穩定地執行透過雷射劃線加工於基板形成劃線、進而進行雷射裂斷處理使基板完全斷開或形成較深之裂痕的加工。再者，本發明之目的在於提供一種脆性材料基板之加工方法，其能穩定地執行加工端面之端面品質優異的斷開加工。Moreover, an object of the present invention is to provide a method for processing a substrate of a brittle material, which can stably perform a process of forming a scribe line by laser scribe line processing, and further performing a laser cleavage process to completely break the substrate or form a deeper Processing of cracks. Further, an object of the present invention is to provide a method for processing a brittle material substrate which can stably perform a breaking process excellent in end surface quality of a machined end face.
為解決上述課題，本發明之脆性材料基板之加工方法，係對脆性材料基板設定以基板端為開始端之劃線預定線，並沿劃線預定線形成有限深度之裂痕，其特徵在於：對劃線預定線之該開始端附近且自開始端往基板內側方向分離之劃線預定線上的位置，壓接刀輪以形成與開始端分離之初期龜裂；其次，使藉由雷射照射而形成於基板面之光束點，一邊從開始端通過該初期龜裂上、一邊沿劃線預定線相對移動，藉此以軟化溫度以下之溫度進行局部加熱，接著藉由冷卻局部加熱後之區域之後方近處，以沿劃線預定線形成以初期龜裂之位置為起點之有限深度的裂痕。In order to solve the above problems, the method for processing a brittle material substrate according to the present invention is to set a predetermined line of a scribe line starting from a substrate end to a brittle material substrate, and to form a crack having a finite depth along a predetermined line of scribe lines, which is characterized in that: Positioning the line near the start end of the predetermined line and separating the line from the start end to the inner side of the substrate, crimping the cutter wheel to form an initial crack separated from the start end; secondly, by laser irradiation The beam spot formed on the substrate surface is relatively moved along the predetermined line of the scribe line from the start end through the initial crack, thereby performing local heating at a temperature lower than the softening temperature, and then cooling the locally heated region. In the vicinity, a crack having a finite depth starting from the position of the initial crack is formed along a predetermined line of the scribe line.
根據本發明，當於劃線預定線上形成初期龜裂時，初期龜裂之形成位置並非脆性材料基板之基板端而係自基板端稍往基板內側方向分離之位置，以使初期龜裂與基板端分離。初期龜裂，係藉由將刀輪往劃線預定線之方向壓接而形成，初期龜裂之方向係朝向劃線預定線之線方向。其次，使光束點沿劃線預定線相對移動，藉此從劃線預定線之開始端通過初期龜裂上而局部加熱基板。進而，冷卻局部加熱後之區域的後方近處。此時，由於在基板端不存在初期龜裂，因此裂痕不會自基板端行進。接著，使光束點從基板端前進，將稍微分離之位置之初期龜裂上加熱(此時於初期龜裂表面產生壓縮應力而使龜裂不會行進)，進而稍微前進，在已冷卻初期龜裂上之時點(此時因於初期龜裂表面產生拉伸應力而於初期龜裂內部產生壓縮應力)，形成以初期龜裂為起點之有限深度的裂痕。According to the present invention, when the initial crack is formed on the predetermined line of the scribe line, the initial crack formation position is not the substrate end of the brittle material substrate but is separated from the substrate end toward the substrate inner side direction, so that the initial crack and the substrate End separation. The initial crack is formed by crimping the cutter wheel in the direction of the line to be scribed, and the direction of the initial crack is directed toward the line of the predetermined line. Next, the beam spot is relatively moved along the predetermined line of the scribe line, whereby the substrate is locally heated by passing the initial crack from the beginning end of the predetermined line of the scribe line. Further, the vicinity of the rear side of the area after the local heating is cooled. At this time, since there is no initial crack at the substrate end, the crack does not travel from the substrate end. Next, the beam spot is advanced from the substrate end, and the initial crack is heated at a position where it is slightly separated (at this time, a compressive stress is generated at the initial crack surface and the crack does not travel), and then the blade is slightly advanced, and the turtle is cooled at the initial stage. At the time of the crack (at this time, a tensile stress is generated in the initial crack surface to generate a compressive stress in the initial crack), and a crack having a finite depth starting from the initial crack is formed.
此時，即使於基板端附近形成前後方向(劃線預定線方向)之應力分布而產生往左右拉斷之力(誘導全切斷線之力)，由於在基板端未形成有初期龜裂，因此不會形成自基板端行進之全切斷線。接著，一旦形成以初期龜裂為起點之有線深度之裂痕後，其後即隨著光束點之掃描在劃線預定線上連續形成有限深度之裂痕，而形成所欲之劃線。如上述，由於營造了一種不易形成全切斷線的狀況，因此即使不將光束點之加熱條件或冷卻條件變更為較以往更極端的條件，亦不會移行至全切斷線，取而代之地係形成較深之劃線。At this time, even if the stress distribution in the front-rear direction (the predetermined line direction of the scribe line) is formed in the vicinity of the substrate end, and the force is pulled to the right and left (the force for inducing the full cutting line), since the initial crack is not formed at the substrate end, Therefore, a full cut line that travels from the substrate end is not formed. Then, once the crack of the line depth starting from the initial crack is formed, the stencil of the finite depth is continuously formed on the line of the scribe line as the beam spot scans, and the desired scribe line is formed. As described above, since a situation in which it is difficult to form a full cutting line is created, even if the heating condition or the cooling condition of the beam spot is not changed to a more extreme condition than before, it does not migrate to the full cutting line, and instead is replaced by Form a deeper line.
根據本發明，在進行雷射劃線時，不易形成全切斷線，且能擴大能形成有限深度之裂痕所構成之劃線的製程容許度(可供設定之加熱條件或冷卻條件之範圍)。其結果，能穩定地形成劃線。According to the present invention, it is difficult to form a full cutting line when performing laser scribing, and it is possible to expand the process tolerance of the scribe line which can form a crack having a finite depth (a range of heating conditions or cooling conditions which can be set) . As a result, the scribe line can be stably formed.
又，根據本發明，即使不將雷射劃線之加工條件(加熱條件、冷卻條件)變更為較以往更極端的條件，亦不會形成全切斷線，而能形成劃線。其結果，能形成較以往深之劃線。再者，由於不於基板端形成裂痕，因此能抑制「先行」現象之產生。Moreover, according to the present invention, even if the processing conditions (heating conditions, cooling conditions) of the laser scribing are not changed to more extreme conditions than in the past, the full cutting line is not formed, and the scribing can be formed. As a result, it is possible to form a deeper scribe line than in the past. Furthermore, since the crack is not formed at the end of the substrate, the occurrence of the "first" phenomenon can be suppressed.
上述發明中，亦可使用於刀尖形成有週期槽之具槽部刀輪來作為刀輪。In the above invention, a grooved cutter wheel having a periodic groove formed in the cutting edge may be used as the cutter wheel.
又，上述發明中，劃線預定線之開始端至初期龜裂的分離距離亦可為2mm～7mm。Further, in the above invention, the separation distance from the start end of the predetermined line to the initial crack may be 2 mm to 7 mm.
又，為解決上述課題之其他脆性材料基板之加工方法，係沿設定於脆性材料基板之第1基板端至第2基板端之劃線預定線，以下述步驟進行二度雷射照射以對該基板進行加工。Further, in order to solve the above-described problem of the other brittle material substrate, the second predetermined laser beam is irradiated along the predetermined line to the second substrate end of the brittle material substrate, and the second laser irradiation is performed to The substrate is processed.
(a)首先執行第1初期龜裂形成步驟，係於第1基板端附近之劃線預定線上，以與第1基板端分離之方式於基板內側形成第1初期龜裂。(b)其次執行雷射劃線步驟，使第1次雷射照射之光束點自第1基板端側沿劃線預定線相對移動至第2基板端，而將基板以軟化溫度以下之溫度加熱，且對光束點通過後之部位立即噴吹冷媒以使其冷卻，藉以利用產生於劃線預定線之深度方向之應力梯度沿劃線預定線形成有限深度的劃線。(a) First, the first initial crack forming step is performed, and the first initial crack is formed on the inside of the substrate so as to be separated from the first substrate end by the predetermined line on the scribe line near the first substrate end. (b) secondly performing a laser scribing step such that the beam spot of the first laser irradiation is relatively moved from the first substrate end side to the second substrate end along the predetermined line of the scribe line, and the substrate is heated at a temperature lower than the softening temperature. And immediately after the passage of the beam spot, the refrigerant is blown to be cooled, whereby a gradation of a limited depth is formed along a predetermined line of the scribe line by a stress gradient generated in a depth direction of the predetermined line of the scribe line.
此時，藉由適當地選擇光束點之加熱條件、冷卻點之冷卻條件，而能形成基於深度方向之應力梯度形成之有限深度的裂痕所構成的劃線，而不致形成全切斷線。具體而言，若過於設定使基板表面之溫度差變為極端之加熱條件(例如增大雷射輸出)或冷卻條件(例如增大冷媒噴射量)，即會有較劃線更容易形成為全切斷線的傾向，因此係不將加熱條件或冷卻條件設定成過於極端之條件。不過，由於在第1基板端未形成初期龜裂，因此不易產生從基板端開始之全切斷線，而能選擇之製程容許度增大，因此能以溫度差較以往大之加熱條件、冷卻條件進行雷射劃線加工。At this time, by appropriately selecting the heating conditions of the beam spot and the cooling conditions of the cooling point, it is possible to form a scribe line formed by a crack having a finite depth formed by the stress gradient in the depth direction without forming a full cutting line. Specifically, if the heating condition (for example, increasing the laser output) or the cooling condition (for example, increasing the amount of refrigerant injection) that causes the temperature difference on the surface of the substrate to be extreme is set too much, it is easier to form the entire line than the line. Since the tendency of the line is cut, the heating condition or the cooling condition is not set to an excessively extreme condition. However, since the initial crack is not formed at the first substrate end, the entire cutting line from the substrate end is less likely to occur, and the process tolerance that can be selected is increased. Therefore, the heating condition and the cooling can be made larger than the conventional temperature. Conditional laser scribing processing.
(c)其次執行第2初期龜裂形成步驟，於第1基板端或第1基板端與第1初期龜裂之間之劃線預定線之至少任一者形成第2初期龜裂。(c) Next, the second initial crack forming step is performed, and at least one of the predetermined line between the first substrate end or the first substrate end and the first initial crack is formed to form a second initial crack.
藉此，能在次一雷射裂斷步驟時將用以誘導裂痕之行進方向的切痕先形成於第1基板端附近。Thereby, the incision for inducing the traveling direction of the crack can be formed in the vicinity of the first substrate end in the next laser breaking step.
(d)其次執行雷射裂斷步驟，使第2次雷射照射之光束點沿劃線自第1基板端相對移動至第2基板端，而使劃線進一步滲透或完全地斷開。(d) Next, the laser cracking step is performed such that the beam spot of the second laser irradiation is relatively moved from the first substrate end to the second substrate end along the scribe line, so that the scribe line is further penetrated or completely broken.
藉此，能使裂痕自第1基板端行進至第2基板端，而確實地形成裂痕，且能誘導藉由第2初期龜裂而形成於第1基板端附近的裂痕之行進方向，因此能防止形成如先行」現象之無法控制的裂痕。Thereby, the crack can be propagated from the first substrate end to the second substrate end, and the crack can be surely formed, and the traveling direction of the crack formed in the vicinity of the first substrate end by the second initial crack can be induced. Prevent the formation of uncontrollable cracks such as the "first move" phenomenon.
根據本發明，能將雷射劃線步驟所形成之劃線形成為較深的劃線，或能簡單地進行斷開加工。According to the present invention, the scribe line formed by the laser scribing step can be formed into a deep scribe line, or the scission can be easily performed.
又，在進行雷射劃線加工時，由於能擴大可供設定之製程容許度(作為加工條件能設定的範圍)，因此能使用較以往極端之加熱條件、冷卻條件形成較深的劃線。又，藉由形成較深之劃線，而能使雷射裂斷處理時可供設定之製程容許度(作為加工條件能設定的範圍)擴大，可在不移行至全切斷之狀態下穩定地將劃線形成為較深或穩定地完全斷開。Further, in the laser scribing process, since the allowable process tolerance (the range that can be set as the processing conditions) can be expanded, it is possible to form a deep scribe line using the above-described extreme heating conditions and cooling conditions. Moreover, by forming a deeper scribe line, the process tolerance (which can be set as a processing condition) that can be set at the time of laser cracking processing can be expanded, and can be stabilized without moving to full cut. The scribe line is formed to be completely broken deep or stably.
上述(c)之第2初期龜裂形成步驟中，第2初期龜裂係沿該劃線預定線自第1基板端連續形成至第1初期龜裂。In the second initial crack forming step of the above (c), the second initial cracking system is continuously formed from the first substrate end to the first initial crack along the predetermined line of the scribe line.
藉此，藉由在次一雷射裂斷步驟時，使裂痕沿劃線預定線自第1基板端行進至第1初期龜裂，而能完全解決先行現象。Thereby, the first phenomenon can be completely solved by causing the crack to travel from the first substrate end to the first initial crack along the predetermined line of the scribe line in the next laser rupture step.
又，上述發明中，第1初期龜裂及第2初期龜裂亦可藉由壓接刀輪而形成。藉此，即使在與基板端分離之基板面上，亦可確實地形成細切痕的初期龜裂。Further, in the above invention, the first initial crack and the second initial crack may be formed by crimping the cutter wheel. Thereby, the initial crack of the fine cut can be reliably formed even on the surface of the substrate separated from the substrate end.
特別是，藉由使用於刀尖形成有週期槽之刀輪，在刀尖於基板面變得不易滑動，而於與基板端分離之位置形成初期龜裂時，能僅滾動較短之距離(1mm～2mm左右)即確實地形成穩定之初期龜裂。作為於刀尖形成有週期槽之具槽部刀輪，具體而言可使用三星鑽石工業股份有限公司製之高滲透刀尖「PENET」(註冊商標)或「APIO」(註冊商標)。In particular, by using a cutter wheel having a periodic groove formed in the cutting edge, the blade edge becomes less likely to slide on the substrate surface, and when an initial crack is formed at a position separated from the substrate end, only a short distance can be rolled ( From about 1 mm to about 2 mm, it is sure to form a stable initial crack. As a grooved cutter wheel in which a cycle groove is formed in the cutting edge, a high-permeability tip "PENET" (registered trademark) or "APIO" (registered trademark) manufactured by Samsung Diamond Industrial Co., Ltd. can be used.
又，上述發明中，第1初期龜裂亦可藉由壓接刀輪而形成，第2初期龜裂亦可藉由自第1初期龜裂上朝向第1基板端側之雷射的部分地照射而形成。Further, in the above invention, the first initial crack may be formed by a crimping cutter wheel, and the second initial crack may be partially caused by the laser from the first initial crack toward the first substrate end side. Formed by irradiation.
藉此，基板上之第1初期龜裂可藉由刀輪確實地形成細切痕的初期龜裂。又，關於第2初期龜裂，由於已形成第1初期龜裂，因此能藉由自第1初期龜裂上朝向第1基板端側之雷射的部分地照射而使裂痕行進，藉以誘導第2初期龜裂。Thereby, the first initial crack on the substrate can reliably form an initial crack of the fine cut by the cutter wheel. In the second initial crack, since the first initial crack is formed, it is possible to cause the crack to travel by the partial irradiation of the laser from the first initial crack toward the first substrate end side, thereby inducing the first 2 initial cracks.
又，上述發明中，第2初期龜裂亦可形成為較第1初期龜裂深。具體而言，只要在形成例如第2初期龜裂時之刀輪的壓接力較形成第1初期龜裂時強即可。Further, in the above invention, the second initial crack may be formed to be deeper than the first initial crack. Specifically, the pressure contact force of the cutter wheel when the second initial crack is formed, for example, may be stronger than when the first initial crack is formed.
藉此，能在接著進行之雷射裂斷步驟中簡單地加深裂痕的深度。Thereby, the depth of the crack can be simply deepened in the subsequent laser cracking step.
以下，根據圖式說明本發明之實施形態。Hereinafter, embodiments of the present invention will be described based on the drawings.
最初，說明實施本發明之加工方法時所使用之基板加工裝置一例。First, an example of a substrate processing apparatus used in carrying out the processing method of the present invention will be described.
圖1係能實施本發明之加工方法之基板加工裝置LS1的概略構成圖。此處雖以加工玻璃基板之情形為例進行說明，但矽基板等之脆性材料基板亦相同。Fig. 1 is a schematic configuration diagram of a substrate processing apparatus LS1 capable of carrying out the processing method of the present invention. Here, the case where the glass substrate is processed will be described as an example, but the brittle material substrate such as the tantalum substrate is also the same.
首先，說明基板加工裝置LS1之整體構成。設有沿著於水平架台1上平行配置之一對導軌3、4於圖1紙面前後方向(以下稱為Y方向)上往復移動的滑動台2。且形成為：於兩導軌3、4之間沿著前後方向配置有導螺桿5，於該導螺桿5上螺合有固定於滑動台2之固定件6，並藉由以馬達(未圖示)使導螺桿5正、反轉動，使滑動台2沿著導軌3、4往復移動於Y方向上。First, the overall configuration of the substrate processing apparatus LS1 will be described. A slide table 2 that reciprocates in a rearward direction (hereinafter referred to as a Y direction) of the guide rails 3, 4 in the front and back of the paper of Fig. 1 is provided along one of the parallel arrangement on the horizontal gantry 1. The lead screw 5 is disposed between the two guide rails 3 and 4 in the front-rear direction, and the fixing member 6 fixed to the slide table 2 is screwed to the lead screw 5, and is driven by a motor (not shown). The guide screw 5 is rotated forward and backward to reciprocate the slide table 2 along the guide rails 3, 4 in the Y direction.
於滑動台2上配置有沿著導軌8往復移動於圖1之左右方向(以下稱為X方向)之水平台座7。於固定於台座7上之支架10a上貫通螺合有以馬達9轉動之導螺桿10，藉由導螺桿10正、反轉動，使台座7沿著導軌8往復移動於X方向。A water platform seat 7 that reciprocates along the guide rail 8 in the left-right direction (hereinafter referred to as the X direction) of FIG. 1 is disposed on the slide table 2. A lead screw 10 that is rotated by a motor 9 is screwed into a bracket 10a fixed to the pedestal 7, and the pedestal 7 is reciprocated along the guide rail 8 in the X direction by the forward and reverse rotation of the lead screw 10.
於台座7上設置有以旋轉機構11轉動之旋轉台12，且玻璃基板A在水平之狀態下安裝於該旋轉台12上。該玻璃基板A係例如用於切出較小單位基板之母基板。旋轉機構11係使旋轉台12繞垂直之軸旋轉，且形成為可以相對於基準位置成為任意旋轉角度之方式進行旋轉。又，玻璃基板A藉由吸引夾頭固定於旋轉台12上。The turret 7 is provided with a rotary table 12 that is rotated by a rotating mechanism 11, and the glass substrate A is attached to the rotary table 12 in a horizontal state. The glass substrate A is, for example, a mother substrate for cutting out a small unit substrate. The rotating mechanism 11 rotates the turntable 12 about a vertical axis and is rotatable so as to be at an arbitrary rotation angle with respect to the reference position. Further, the glass substrate A is fixed to the turntable 12 by a suction chuck.
於旋轉台12之上方，雷射裝置13與光學保持器14保持於安裝框架15上。Above the turntable 12, the laser device 13 and the optical holder 14 are held on the mounting frame 15.
雷射裝置13，作為脆性材料基板之加工用途，使用通常之雷射裝置即可，具體而言，使用準分子雷射、YAG雷射、二氧化碳雷射或一氧化碳雷射等。於玻璃基板A之加工中，較佳為使用可振盪出玻璃材料之能量吸收效率較大之波長之光的二氧化碳雷射。The laser device 13 may be a conventional laser device for processing a brittle material substrate, and specifically, an excimer laser, a YAG laser, a carbon dioxide laser, or a carbon monoxide laser may be used. In the processing of the glass substrate A, it is preferred to use a carbon dioxide laser which can oscillate light of a wavelength at which the energy absorption efficiency of the glass material is large.
自雷射裝置13射出之雷射光束，其預先設定之形狀之光束點藉由組裝有用於調整光束形狀之透鏡光學系統的光學保持器14照射至玻璃基板A上。關於光束點之形狀，雖具有長軸之形狀(橢圓形、長圓形等)可沿著劃線預定線高效率地進行加熱這一方面較為優異，但只要可在低於軟化溫度之溫度下進行加熱之形狀，光束點之形狀並無特別限定。本實施形態中係形成橢圓形狀之光束點。The laser beam emitted from the laser device 13 has a beam spot of a predetermined shape and is irradiated onto the glass substrate A by an optical holder 14 in which a lens optical system for adjusting the shape of the beam is assembled. The shape of the beam spot is excellent in that the shape of the long axis (elliptical shape, oblong shape, or the like) can be efficiently heated along the predetermined line of the scribe line, as long as it can be at a temperature lower than the softening temperature. The shape of the heating is not particularly limited as long as the shape of the beam is heated. In the present embodiment, a beam spot having an elliptical shape is formed.
於安裝框架15，接近光學保持器14設置有冷卻嘴16。冷媒由冷卻嘴16進行噴射。冷媒可使用冷卻水、壓縮空氣、氦氣、二氧化碳等，於本實施形態中係噴射壓縮空氣。從冷卻嘴16噴射出之冷卻媒體朝向自光束點之左端稍微分離的位置，藉以於玻璃基板A表面形成冷卻點。In the mounting frame 15, the proximity optical holder 14 is provided with a cooling nozzle 16. The refrigerant is ejected by the cooling nozzle 16. Cooling water, compressed air, helium gas, carbon dioxide, or the like can be used as the refrigerant, and in the present embodiment, compressed air is sprayed. The cooling medium ejected from the cooling nozzle 16 is directed to a position slightly separated from the left end of the beam spot, whereby a cooling point is formed on the surface of the glass substrate A.
又，於安裝框架15透過升降機構17安裝有具週期槽部之刀輪18。該刀輪18係在於玻璃基板A形成初期龜裂Tr時，從玻璃基板A上方暫時地下降而使用。Further, a cutter wheel 18 having a periodic groove portion is attached to the mounting frame 15 via the elevating mechanism 17. This cutter wheel 18 is used when the glass substrate A forms the initial crack Tr, and is temporarily lowered from above the glass substrate A.
圖2係具週期槽部之刀輪的示意圖，圖2(a)係前視圖，圖2(b)係側視圖。此具週期槽部之刀輪18係沿刀尖18a週期性地形成有槽部18b(此外，圖2中為了方便說明，係將於刀尖18a之槽部18b的大小較實際更為誇張地描繪)。具體而言係按照1～20mm之刀輪徑，在20μm～200μm的範圍設置槽間距。又，槽深為2μm～2500μm。Fig. 2 is a schematic view showing a cutter wheel having a periodic groove portion, Fig. 2(a) is a front view, and Fig. 2(b) is a side view. The cutter wheel 18 having the periodic groove portion is periodically formed with the groove portion 18b along the blade edge 18a (further, for convenience of explanation in Fig. 2, the size of the groove portion 18b of the blade edge 18a is more exaggerated than the actual one. Depict). Specifically, the groove pitch is set in the range of 20 μm to 200 μm in accordance with the cutter wheel diameter of 1 to 20 mm. Further, the groove depth is 2 μm to 2500 μm.
藉由使用上述特殊刀尖之刀輪，不僅能形成較不具槽部之刀輪更深地滲透的裂痕，且刀尖不易於基板面滑動，因此在形成初期龜裂時，能僅滾動較短之距離(1mm～2mm左右)即於基板面確實地形成初期龜裂。By using the cutter wheel of the special tool tip described above, it is possible to form not only a crack that penetrates deeper than the cutter wheel having no groove portion, but also the blade tip is not easy to slide on the substrate surface, so that when the initial crack is formed, only the shorter one can be rolled. The distance (1 mm to 2 mm) means that the initial crack is reliably formed on the substrate surface.
又，於基板加工裝置LS1中搭載有可檢測刻印於玻璃基板A上之用於定位之對準標記的攝影機20，可自藉由攝影機20所檢測出之對準標記之位置求出設定於基板A上之劃線預定線之位置與旋轉台12的對應位置關係，並正確地定位成刀輪18之下降位置或雷射光束之照射位置可到達劃線預定線上。Further, a camera 20 capable of detecting an alignment mark for positioning on the glass substrate A is mounted on the substrate processing apparatus LS1, and can be set on the substrate from the position of the alignment mark detected by the camera 20. The position of the predetermined line on A is corresponding to the positional relationship of the rotary table 12, and is correctly positioned to the lowered position of the cutter wheel 18 or the irradiation position of the laser beam to reach the predetermined line of the line.
繼而，就上述基板加工裝置LS1之加工動作進行說明。圖3係顯示藉由第1次雷射照射而形成有限深度之劃線為止之雷射劃線加工之加工動作步驟的圖，圖4係顯示藉由第2次雷射照射而進行雷射裂斷處理為止之加工動作步驟的圖。此外，圖3、圖4中僅圖示圖1之主要部位。Next, the processing operation of the substrate processing apparatus LS1 will be described. 3 is a view showing a processing operation procedure of laser scribing processing until a finite depth of scribe line is formed by the first laser irradiation, and FIG. 4 is a view showing a laser cracking by the second laser irradiation. A diagram of the processing steps until the processing is interrupted. In addition, in FIG. 3 and FIG. 4, only the main part of FIG. 1 is shown.
首先，如圖3(a)所示，將玻璃基板A載置於旋轉台12之上，且以吸引夾頭固定。藉由攝影機20(圖1)檢測出刻印於玻璃基板A之對準標記(未圖示)，並根據其檢測結果，建立劃線預定線、旋轉台12、滑動台2、台座7之位置關係。之後，使旋轉台12以及滑動台2作動，以將位置調整成刀輪18之刀尖方向與劃線預定線之方向一致。First, as shown in FIG. 3(a), the glass substrate A is placed on the turntable 12 and fixed by a suction chuck. An alignment mark (not shown) imprinted on the glass substrate A is detected by the camera 20 (FIG. 1), and based on the detection result, the positional relationship between the predetermined line of the scribe line, the rotary table 12, the slide table 2, and the pedestal 7 is established. . Thereafter, the turntable 12 and the slide table 2 are actuated to adjust the position so that the direction of the cutting edge of the cutter wheel 18 coincides with the direction of the predetermined line of the scribe line.
其次，如圖3(b)所示，使台座7(圖1)作動以使旋轉台12移動，以使刀輪18來到玻璃基板A中將形成第1初期龜裂之第1基板端A1附近且與第1基板端A1分離之位置的上方。Next, as shown in FIG. 3(b), the pedestal 7 (FIG. 1) is actuated to move the rotary table 12 so that the cutter wheel 18 comes into the glass substrate A to form the first substrate end A1 of the first initial crack. It is above the position separated from the first substrate end A1.
其次，如圖3(c)所示，使升降機構17作動而使刀輪18下降。接著使刀尖壓接於基板A以形成第1初期龜裂Tr1。此時使台座7移動2mm左右而在基板上使刀輪18滾動，藉以確實地形成穩定之第1初期龜裂Tr1。Next, as shown in Fig. 3(c), the elevating mechanism 17 is actuated to lower the cutter wheel 18. Next, the blade edge is pressed against the substrate A to form the first initial crack Tr1. At this time, the pedestal 7 is moved by about 2 mm, and the cutter wheel 18 is rolled on the substrate, whereby the stable first initial crack Tr1 is surely formed.
其次，如圖3(d)所示，使升降機構17及旋轉台12返回原來的位置(圖3(a)之位置)，並使雷射裝置13作動以照射雷射光束。且自冷卻嘴16噴射冷媒。此時照射之雷射輸出或冷媒噴射量等之加熱條件、冷卻條件，係設定在不會於第1初期龜裂Tr1之位置產生貫通裂痕(亦即不成為全切斷)的範圍內。Next, as shown in FIG. 3(d), the elevating mechanism 17 and the rotary table 12 are returned to the original position (the position of FIG. 3(a)), and the laser device 13 is actuated to illuminate the laser beam. The refrigerant is injected from the cooling nozzle 16. The heating conditions and the cooling conditions such as the laser output or the amount of the refrigerant to be irradiated at this time are set within a range where the through crack (that is, the full cut) is not generated at the position of the first initial crack Tr1.
由於將第1初期龜裂Tr1與基板端(第1基板端A1)分離而形成於基板內側位置，因此即使於第1基板端A1產生往左右拉裂的力(使之成為全切斷狀態之力)，第1基板端A1仍係難以產生裂痕的狀態，因此與預先於基板端A1形成初期龜裂之情形相較，不易成為全切斷。又，關於所照射之雷射輸出或冷媒噴射量等加熱條件、冷卻條件，可選擇不致成為全切斷之條件的製程容許度係增加。因此，作為所設定之加熱條件或冷卻條件，亦可選擇較初期龜裂形成於基板端時更極端之條件、亦即可形成更深劃線的條件。Since the first initial crack Tr1 is separated from the substrate end (the first substrate end A1) and formed at the inner side of the substrate, even if the first substrate end A1 is pulled to the right and left, the force is pulled (it becomes the fully cut state). The first substrate end A1 is still in a state in which cracks are hard to occur. Therefore, compared with the case where the initial crack is formed in the substrate end A1 in advance, it is difficult to achieve full cutting. Further, regarding the heating conditions and cooling conditions such as the laser output to be irradiated or the amount of refrigerant to be injected, it is possible to select an increase in the process tolerance which does not cause the full cutting. Therefore, as the set heating condition or cooling condition, it is also possible to select a condition that is more extreme than when the initial crack is formed on the substrate end, and a condition that a deeper scribe line can be formed.
其次，如圖3(e)所示，使台座7移動，以使形成於基板A上之雷射光束的光束點及來自冷卻嘴16之冷媒的冷卻點沿劃線預定線掃描。Next, as shown in Fig. 3(e), the pedestal 7 is moved so that the beam spot of the laser beam formed on the substrate A and the cooling point of the refrigerant from the cooling nozzle 16 are scanned along a predetermined line.
藉由以上動作，於基板A形成以第1初期龜裂Tr1之位置為起點之由有限深度之裂痕Cr所構成的劃線。接著，在不致成為貫通裂痕之範圍內適當地選擇(亦即在不致成為全切斷之範圍內的極端條件)雷射之加熱條件或冷媒之冷卻條件，藉此能形成以往難以形成的較深劃線。此外，於基板A之第1初期龜裂Tr1側之基板端(第1基板端A1)存在未形成有裂痕Cr的區域。By the above operation, the substrate A is formed with a scribe line composed of a crack of a limited depth starting from the position of the first initial crack Tr1. Then, in a range that does not become a through crack, an appropriate heating condition (that is, an extreme condition in a range that does not become a full cut) or a cooling condition of the refrigerant can be appropriately selected, thereby forming a deeper difficulty in forming in the past. Dash. Further, a region where the crack Cr is not formed is present on the substrate end (first substrate end A1) on the first initial crack Tr1 side of the substrate A.
其次，說明雷射裂斷處理。Secondly, the laser cracking process will be explained.
如圖4(a)所示，使旋轉台12返回原來的位置(圖3(a)之位置)，並使升降機構17作動以使刀輪18下降。As shown in Fig. 4 (a), the turntable 12 is returned to the original position (the position of Fig. 3 (a)), and the elevating mechanism 17 is actuated to lower the cutter wheel 18.
其次，如圖4(b)所示，使基板A與刀輪18移動成彼此接近，使刀輪18抵接於第1基板端A1，以於基板端形成第2初期龜裂Tr2。此時亦可使旋轉台12持續移動，使第2初期龜裂Tr2連續形成至第1初期龜裂Tr1。Next, as shown in FIG. 4(b), the substrate A and the cutter wheel 18 are moved closer to each other, and the cutter wheel 18 is brought into contact with the first substrate end A1 to form the second initial crack Tr2 at the substrate end. At this time, the turntable 12 can be continuously moved, and the second initial crack Tr2 can be continuously formed to the first initial crack Tr1.
又，亦可藉由改變壓接力將第2初期龜裂Tr2形成為較第1初期龜裂Tr1深。此時，能如後述將裂痕簡單地形成較深。Further, the second initial crack Tr2 may be formed deeper than the first initial crack Tr1 by changing the pressure contact force. At this time, the crack can be easily formed deep as will be described later.
其次，如圖4(c)所示，使升降機構17及旋轉台12(台座7)返回原來位置(圖3(a)之位置)，使雷射裝置13作動以照射雷射光束。此時照射之雷射輸出等之加熱條件，留待後述。Next, as shown in FIG. 4(c), the elevating mechanism 17 and the rotating table 12 (the pedestal 7) are returned to the original position (the position of FIG. 3(a)), and the laser device 13 is actuated to illuminate the laser beam. The heating conditions such as the laser output at this time are left to be described later.
其次，如圖4(d)所示，使基板A移動，以將形成於基板A上之光束點沿劃線從第1基板端A1朝向第2基板端A2掃描。藉此，由於以第2初期龜裂Tr2(亦即第1基板端A1)為起點使較深裂痕Cr2沿裂痕Cr(劃線)行進，因此可將較以往深之劃線形成至第2基板端A2。Next, as shown in FIG. 4(d), the substrate A is moved to scan the beam spot formed on the substrate A along the scribe line from the first substrate end A1 toward the second substrate end A2. By this, the deep crack CR2 travels along the crack Cr (scribe line) with the second initial crack Tr2 (that is, the first substrate end A1) as a starting point, so that the deeper scribe line can be formed to the second substrate. End A2.
此處，說明雷射裂斷處理時之加熱條件。雷射輸出等之加熱條件，雖亦可與第1次雷射照射時相同，但最好係設定成如下。Here, the heating conditions at the time of the laser splitting treatment will be described. The heating conditions such as the laser output may be the same as in the case of the first laser irradiation, but it is preferably set as follows.
在雷射裂斷處理中，係設定成使掃描速度較第1次雷射照射時更快，縮短在劃線上之各點的加熱時間(雷射輸出設定成較高)，且對劃線表層僅加熱短時間。其理由在於，如此可在基板表層與基板內部之間形成用以使裂痕Cr深入滲透的應力梯度。In the laser cracking process, the scanning speed is set to be faster than that of the first laser irradiation, and the heating time at each point on the scribe line is shortened (the laser output is set to be higher), and the surface of the scribe line is Only heat for a short time. The reason for this is that a stress gradient for deeply penetrating the crack Cr can be formed between the surface layer of the substrate and the inside of the substrate.
圖5，係以示意方式顯示將在雷射裂斷處理時形成之應力梯度的截面圖。短時間加熱基板表層而形成加熱區域H。接著，於基板表層形成較大壓縮應力HR，受到其影響使基板內部產生相反之拉伸應力CR。當於基板內部存在裂痕Cr時，拉伸應力即集中於裂痕Cr前端，其結果，裂痕Cr可更深地滲透。Figure 5 is a cross-sectional view showing, in a schematic manner, the stress gradient that will be formed during the laser splitting process. The surface layer of the substrate is heated for a short time to form a heating region H. Next, a large compressive stress HR is formed on the surface layer of the substrate, and the opposite tensile stress CR is generated inside the substrate. When there is a crack Cr inside the substrate, the tensile stress concentrates on the front end of the crack Cr, and as a result, the crack Cr can penetrate deeper.
若逐漸增長基板表層之加熱時間，熱即傳遞至基板內部使產生於深度方向之溫度差變小。其結果使深度方向之應力梯度變弱。因此，在雷射裂斷處理中，為了設定易於基板表層形成壓縮應力、於基板內部形成拉伸應力之加熱條件、冷卻條件，最好選擇在基板不軟化之溫度範圍內於短時間內強烈加熱的加熱條件。又，亦可藉由在加熱前預先噴吹冷媒先予以冷卻，即能使深度方向之溫度差變大，以較容易於基板內部產生拉伸應力。If the heating time of the surface layer of the substrate is gradually increased, heat is transferred to the inside of the substrate to make the temperature difference generated in the depth direction small. As a result, the stress gradient in the depth direction is weakened. Therefore, in the laser cracking treatment, in order to set the heating stress and the cooling conditions for forming the compressive stress on the surface layer of the substrate and forming the tensile stress inside the substrate, it is preferable to strongly heat the substrate in a short time without being softened. Heating conditions. Further, by cooling the refrigerant before the heating, the temperature difference in the depth direction can be increased, and the tensile stress can be easily generated inside the substrate.
又，說明藉由將第2初期龜裂形成為較第1初期龜裂，即能簡單地形成更深之劃線的理由。Further, the reason why the second initial crack is formed to be the first initial crack can be easily formed by forming a deeper scribe line.
藉由以形成於第1基板端A1附近之較深之第2初期龜裂Tr2作為雷射裂斷處理的開始端，能將拉伸應力集中之裂痕前端之初期位置設為基板的較深位置。在此狀態下進行雷射照射，藉此能給予基板表層強烈之壓縮應力。藉此，拉伸應力集中於較深位置之裂痕前端，基板表面至裂痕前端之距離越長至某程度，即越能使欲將裂痕擴展開之較大力量(力矩)作用於拉斷裂痕前端之方向，因此能使裂痕簡單地滲透。The second initial crack Tr2 formed deep in the vicinity of the first substrate end A1 is used as the start end of the laser cracking process, and the initial position of the crack front end at which the tensile stress is concentrated can be set as the deep position of the substrate. . Laser irradiation is performed in this state, whereby a strong compressive stress on the surface layer of the substrate can be imparted. Thereby, the tensile stress concentrates on the front end of the crack at a deeper position, and the distance from the surface of the substrate to the front end of the crack is longer to a certain extent, that is, the larger the force (torque) that is to be spread out is applied to the front end of the fracture. The direction so that the crack can be easily infiltrated.
如上述，在雷射裂斷處理時，藉由從形成於第1基板端之第2初期龜裂朝向第2基板端照射第2次之雷射照射，而能形成較以往更深之裂痕Cr2所構成的劃線，又，當裂痕Cr2深達背面時即能藉由雷射裂斷處理使基板完全斷開。As described above, in the laser cracking process, the second laser irradiation is irradiated from the second initial crack formed on the first substrate end toward the second substrate end, whereby the deeper crack Cr2 can be formed. The scribe line is formed, and when the crack Cr2 is as deep as the back surface, the substrate can be completely broken by the laser rupture treatment.
藉由此方式形成之斷開面非常漂亮且直進性優異，作為加工端面為理想狀態。The fracture surface formed by this method is very beautiful and excellent in straightness, and is ideal as a machined end face.
其次，說明本發明之第2實施形態之加工方法。此處，藉由雷射照射形成第2初期龜裂Tr2。圖6係顯示第2實施形態之加工方法之雷射裂斷步驟之加工動作步驟的圖。此外，至雷射劃線步驟為止均與圖3相同，因此省略說明。Next, a processing method according to a second embodiment of the present invention will be described. Here, the second initial crack Tr2 is formed by laser irradiation. Fig. 6 is a view showing a processing operation procedure of a laser cutting step in the processing method of the second embodiment. In addition, since it is the same as FIG. 3 until the laser scribing step, description is abbreviate|omitted.
藉由與至圖3(e)為止之步驟相同之雷射劃線加工，於基板A形成以第1初期龜裂Tr1之位置為起點之由有限深度之裂痕Cr所構成的劃線。在此狀態下移行至雷射裂斷處理。By the laser scribing process similar to the step up to FIG. 3(e), the substrate A is formed with a scribe line composed of a crack of a limited depth starting from the position of the first initial crack Tr1. In this state, it moves to the laser splitting process.
如圖6(a)所示，使旋轉台12稍微返回，以使第1初期龜裂Tr1來到光學保持器14下方。As shown in FIG. 6(a), the turntable 12 is slightly returned so that the first initial crack Tr1 comes under the optical holder 14.
其次，如圖6(b)所示，使雷射裝置13作動以照射雷射光束，藉以加熱第1初期龜裂Tr1，且使旋轉台12(台座7)移動，使光束點往第1基板端A1側移動。藉此，使裂痕從第1初期龜裂Tr1朝向第1基板端A1行進，而將第2初期龜裂Tr2從第1基板端A1連續形成至第1初期龜裂。Next, as shown in FIG. 6(b), the laser device 13 is actuated to illuminate the laser beam to heat the first initial crack Tr1, and the rotating table 12 (the pedestal 7) is moved to make the beam point to the first substrate. The end A1 moves. As a result, the crack progresses from the first initial crack Tr1 toward the first substrate end A1, and the second initial crack Tr2 is continuously formed from the first substrate end A1 to the first initial crack.
其次，如圖6(c)所示，使旋轉台12(台座7)返回原來的位置(圖3(a)之位置)，並使雷射裝置13作動以照射雷射光束。Next, as shown in Fig. 6(c), the turntable 12 (the pedestal 7) is returned to the original position (the position of Fig. 3 (a)), and the laser device 13 is actuated to illuminate the laser beam.
其次，如圖6(d)所示，使基板A移動，以將形成於基板A上之光束點沿劃線從第1基板端A1朝向第2基板端A2掃描。藉此，由於以第2初期龜裂Tr2(亦即第1基板端A1)為起點使較深裂痕Cr2沿裂痕Cr(劃線)行進，因此可將較深之劃線形成至第2基板端A2。Next, as shown in FIG. 6(d), the substrate A is moved to scan the beam spot formed on the substrate A along the scribe line from the first substrate end A1 toward the second substrate end A2. Thereby, since the deep crack CR2 travels along the crack Cr (scribe line) starting from the second initial crack Tr2 (that is, the first substrate end A1), the deeper scribe line can be formed to the second substrate end. A2.
此外，上述兩個實施形態中，雖均係第2初期龜裂連續形成至第1初期龜裂，但只要初期龜裂彼此接近至某程度，即使在未連續的情形下進行雷射裂斷處理，其結果仍能形成連續的劃線。又，即使將第2初期龜裂Tr2僅形成於第1基板端，只要至第1初期龜裂為止的距離充分近，即能形成連續的劃線。Further, in the above two embodiments, the second initial crack is continuously formed to the first initial crack, but the initial crack is close to a certain extent, and the laser cracking treatment is performed even in the case where the crack is not continuous. The result is still able to form a continuous line. In addition, even if the second initial crack Tr2 is formed only on the first substrate end, a continuous scribe line can be formed as long as the distance to the first initial crack is sufficiently close.
本發明，能利用於將較深劃線形成於玻璃基板等之脆性材料基板之加工，或利用於使之完全斷開的加工。The present invention can be used for processing in which a deep scribe line is formed on a brittle material substrate such as a glass substrate, or in a process of completely breaking it.
2．．．滑動台2. . . Sliding table
7．．．台座7. . . Pedestal
12．．．旋轉台12. . . Rotary table
13．．．雷射裝置13. . . Laser device
16．．．冷卻嘴16. . . Cooling nozzle
17．．．升降機構17. . . Lifting mechanism
18．．．具週期槽部之刀輪18. . . Cutter wheel with periodic groove
A．．．玻璃基板(脆性材料基板)A. . . Glass substrate (brittle material substrate)
BS．．．光束點BS. . . Beam point
CS．．．冷卻點CS. . . Cooling point
Cr．．．裂痕Cr. . . crack
Cr1．．．深裂痕Cr1. . . Deep crack
Cr2．．．裂痕Cr2. . . crack
Tr．．．初期龜裂Tr. . . Initial crack
圖1係在實施本發明之基板加工方法時所使用之基板加工裝置的概略構成圖。Fig. 1 is a schematic configuration diagram of a substrate processing apparatus used in carrying out the substrate processing method of the present invention.
圖2(a)及(b)係顯示具週期槽部之刀輪構成的圖。2(a) and 2(b) are views showing the configuration of a cutter wheel having a periodic groove portion.
圖3(a)～(e)係顯示本發明一實施形態之加工方法之動作步驟一部分的圖。3(a) to 3(e) are views showing a part of the operation steps of the processing method according to the embodiment of the present invention.
圖4(a)～(d)係顯示本發明一實施形態之加工方法之動作步驟一部分的圖。4(a) to 4(d) are views showing a part of the operation steps of the processing method according to the embodiment of the present invention.
圖5係示意地顯示將在雷射裂斷處理時形成之應力梯度的截面圖。Figure 5 is a cross-sectional view schematically showing a stress gradient to be formed at the time of laser cracking.
圖6(a)～(d)係顯示本發明另一實施形態之加工方法之動作步驟一部分的圖。6(a) to 6(d) are views showing a part of the operation steps of the processing method according to another embodiment of the present invention.
圖7(a)～(c)係以示意方式顯示形成有限深度之方式的截面圖。7(a) to (c) are cross-sectional views showing the manner in which a finite depth is formed in a schematic manner.
圖8(a)及(b)係以示意方式顯示形成全切斷線之方式之基板的立體圖及俯視圖。8(a) and 8(b) are a perspective view and a plan view showing a substrate in which a full cutting line is formed in a schematic manner.
圖9係顯示在基板端產生之先行現象的圖。Figure 9 is a diagram showing the leading phenomenon occurring at the substrate end.
12．．．旋轉台12. . . Rotary table
13．．．雷射裝置13. . . Laser device
16．．．冷卻嘴16. . . Cooling nozzle
17．．．升降機構17. . . Lifting mechanism
18．．．具週期槽部之刀輪18. . . Cutter wheel with periodic groove
A．．．玻璃基板(脆性材料基板)A. . . Glass substrate (brittle material substrate)
A1．．．第1基板端A1. . . First substrate end
A2．．．第2基板端A2. . . Second substrate end
Cr．．．裂痕Cr. . . crack
Cr1．．．深裂痕Cr1. . . Deep crack
Cr2．．．裂痕Cr2. . . crack
Tr．．．初期龜裂Tr. . . Initial crack
Tr1．．．第1初期龜裂Tr1. . . First initial crack
Tr2．．．第2初期龜裂Tr2. . . 2nd initial crack
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| KR (1) | KR101223470B1 (en) |
| CN (1) | CN102026926B (en) |
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| CN102883880B (en) | 2010-03-05 | 2017-02-08 | Sage电致变色显示有限公司 | Lamination of electrochromic device to glass substrates |
| FR2962682B1 (en) | 2010-07-16 | 2015-02-27 | Saint Gobain | ELECTROCHEMICAL WINDOW WITH ELECTRONICALLY CONTROLLED OPTICAL AND / OR ENERGY PROPERTIES |
| KR101772445B1 (en) * | 2010-10-27 | 2017-08-31 | 삼성디스플레이 주식회사 | Method of cutting substrate |
| JP5244202B2 (en) * | 2011-01-27 | 2013-07-24 | 三星ダイヤモンド工業株式会社 | Method for scribing a brittle material substrate |
| KR101297558B1 (en) * | 2011-08-23 | 2013-08-14 | 주식회사 로보스타 | Scribing unit of common use for wheel type and laser type |
| JP5779074B2 (en) * | 2011-11-02 | 2015-09-16 | 三星ダイヤモンド工業株式会社 | Method for scribing tempered glass substrate |
| JP6378167B2 (en) * | 2012-04-05 | 2018-08-22 | セイジ・エレクトロクロミクス，インコーポレイテッド | Thermal laser scribe cutting method and apparatus for manufacturing electrochromic devices and corresponding cut glass panels |
| KR101950450B1 (en) * | 2012-08-09 | 2019-02-21 | (주)하드램 | System and method for cutting window plate for mobile telecommunication terminal |
| TWI680106B (en) * | 2014-03-31 | 2019-12-21 | 日商三星鑽石工業股份有限公司 | Method for cutting brittle material substrate |
| JP6431686B2 (en) * | 2014-04-22 | 2018-11-28 | 株式会社オハラ | Sheet glass cutting method |
| JP2016069223A (en) * | 2014-09-30 | 2016-05-09 | 三星ダイヤモンド工業株式会社 | Breaking method and breaking device |
| JP2016069222A (en) * | 2014-09-30 | 2016-05-09 | 三星ダイヤモンド工業株式会社 | Breaking method and breaking device |
| CN106094305B (en) * | 2016-08-04 | 2019-08-30 | 深圳市华星光电技术有限公司 | A kind of method and application adjusting size of electronic display |
| KR102487262B1 (en) * | 2018-07-26 | 2023-01-10 | 헤일로 인더스트리즈 인코포레이티드 | Incident Radiation Induced Subsurface Damage for Controlled Crack Propagation in Material Cleavage |
| CN109231806B (en) * | 2018-10-18 | 2023-10-31 | 常州大学怀德学院 | Turnover system and method for glass width cutting errors in damage prevention production |
| CN110255875A (en) * | 2019-06-30 | 2019-09-20 | 东莞市佰荣森机械设备有限公司 | A kind of hybrid combination double-station glass cutting machine |
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| WO2003008352A1 (en) * | 2001-07-18 | 2003-01-30 | Mitsuboshi Diamond Industrial Co., Ltd. | Device and method for scribing fragile material substrate |
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| JPWO2009128334A1 (en) | 2011-08-04 |
| CN102026926B (en) | 2013-06-05 |
| WO2009128334A1 (en) | 2009-10-22 |
| KR101223470B1 (en) | 2013-01-17 |
| JP5325209B2 (en) | 2013-10-23 |
| TW201002639A (en) | 2010-01-16 |
| CN102026926A (en) | 2011-04-20 |
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