1378327 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種電力操作式放電源、一種微影裝 、及 一種用於借助於一電力操作式放電源而產生輻射的方法。 【先前技術】 w衫裝置係一種將所要之圖案施加至基板上，通常施加 至基板之一目標部分上的機器。微影裝置可用於（例如）積 體電路（ic)之製造中。在彼情況下，一圖案化元件或者稱 為光罩或主光罩之圖案化元件可用於產生待形成於扣之個 別層上的電路圖案。可將此圖案轉印至一基板（例如，矽 晶圓）上之一目標部分（例如，包含一個晶粒或若干晶粒之 部分）上。圖案之轉印通常係經由成像至提供於基板上之 輻射敏感材料（抗蝕劑）層上而達成。一般而言，單一基板 將含有被順次圖案化之相鄰目標部分的網路。已知的微影 裝置包括所謂的步進器，其中藉由一次性將整個圖案曝光 至目標部分上而照射每一目標部分；及所謂的掃描器，其 中藉由在-給定方向(”掃描"方向)上經由輻射光束掃描圖 案同時平行或反平行於此方向同步地掃描基板而照射每一 目標部分。圖案化元件亦有可能藉由將圖案壓印至基板上 來將圖案自圖案化元件轉印至基板。 為了減小元件之臨界尺寸，微影投影裝置可配置有一極 紫外線（EUV)輻射源。該EUV輻鼾馮ότ也“， __ v铷射源可為（例如）放電電漿 輻射源纟中在陽極與陰極之間以一物質（例如，氣體或 )產生錢且其中可藉由流過該電漿之（脈衝巧流所引 127071.doc 1378327 起之歐姆加熱來產生向溫放電電漿。除帶内EUV輻射之 外，實際EUV源亦產生帶外輻射及碎屑，其中後者嚴重限 制靠近輻射源之反射光學器件的操作壽命。在以基輻射源 之狀況下’可區別三種類型之碎屑： 慢速原子碎屑：熱化原子，亦即，根據馬克士威分布 (Maxwell distribution)具有隨機方向及速凌； 快速原子碎屑：具有大體上與輻射源所發射之Euv輻射 平行之高彈道速度的離子、中性粒子（neutrals)及奈米叢 集； 微粒子：亦大體上平行於Euv輻射引導之微米大小之彈 道粒子及小液滴。 快速原子碎屑藉由蝕刻而減小後續光學器件之反射率， 而慢速原子碎屑及微粒子藉由污染表面而減小反射率。因 此應使用抗碎屑組件或碎屑減輕或清除策略以便維持EUV 微影術工具之充足的輸出功率。 PCT專利申請公開案W0 2005/025280描述一 EUV輻射 源，其中陽極及陰極由在一含有液態金屬（諸如Sn)之槽中 被潤濕之輪形成。一些碎屑由電極上之薄膜拾取且傳送回 至該槽。然而，大多數碎屑被引導向微影裝置之光學器 件此碎屑可能藉由被施加了幾千伏特之電壓的金屬薄片 之一額外電極配置進行偏轉。 【發明内容】 而要（例如）減少發源於一電漿輻射源之一電極的微粒子 或防止其到達EUV光學器件。 127071.doc 1378327 根據本發明之一能 作式放電源，該放:源」人供一種用於產生輻射之電力操 極以彼此相距―距離:、：：至少兩個電極，該至少兩個電 ^ ^ ^ _ 方式配置於一放電空間t,此允_ 在該等=之各別作用s域之間的一點處允： 二=之*學元件之，—下 ==區域中之至少-者對於該光學元件之至少- 续純：：=可見的’同時該特定部分確實自該點處之電 在一實施例中，該転射、.s 屈拉龍 射/原進一步包含一經組態以施加金 处β上土 之表面的凡件，及一經配置以將一 月b篁光束引導至該等作 加…… 中之至少一者上以蒸發所施 杜 U刀地產生氣態介質的能量光束元 仵0 在一實施例中，該等電極中之至少—者之 面為楔形。 |刀』杈戳 在一實施例中，該等電極中之每一者包含—凹口且該等 作用區域f該等凹口中，且該放電源進一步包含一經配置 以將一能量光束引導至該等中 束元件。 中…-者上的能量光 在一實施例中，該等電極中之每-者可環繞-旋轉軸線 可旋轉地安裝。 根據另一態樣，提供一種輻射系統，其包含： -一光學元件，其具有一光軸；及 --電力操作式放電源，其經組態以產生輕射，該放電 127071.doc 邊包含至少兩個電極，該至少兩個電極以彼此相距一距離 之方式配置於一放電空間t，此允許在該等電極之各別作 Z區域之間的-點中形成電裝，其中該光學元件之該光轴 與該點相父’且其中該等各別區域中之至少—者對於該光 予元件之至少-特定部分係不可見的，同時該料部分確 實自該點處之電漿接收到輻射。 一在-實施例中’該輻射系統包含一具有輻射透射率之第 一碎屑障壁’該第-碎屑障壁經建構及經配置以防止發源 :/等各別作用區域中之—第—者的碎屬到達該光學元 ，。該輕射系統可包含-第二碎肩障壁，該第二碎屬障壁 經建構及經配置以防止發源於該等各別作用區域中之一第 二者的碎屑到達該光學元件。 該輻射系統可包含一第二碎屑障壁，該第二碎肩障壁經 建構及經配置以防止發源於該等各別作用區域中之一第二 者的碎屑到達該光學元件。 較佳地，第-碎屑障壁及第二碎屑障壁中之—或兩者為 可旋轉箔陷阱（f0il tra 較佳地， 一 w权1也該專可旋轉箔陷阱配置 =電力操作式放電源之相對側上且中之每—者包含 =繞^線可旋轉地配置之複數個葉片，該等可旋轉羯陷 目=㈣力操作式放電源定位以使得該等可旋轉络陷 味中之每-者之橫截面的至多一半可被該轄射源照射。 根據另—態樣，提供一種微影裝置，其包含： 二=操作式放電源’其經組態以產生‘，該放電源 “至少兩個電極，該至少兩個電極以彼此相距一距離之 127071.doc 1378327 方式配置於一放電空間_，此允許在該等電極之各別作用 區域之間的一點處形成電漿； 一照明系統，其經組態以調節一輻射光束，該照明系統 包含一面向該放電源之光學元件，其中該光學元件之一光 轴與該點相交；1378327 IX. Description of the Invention: [Technical Field] The present invention relates to a power operated discharge source, a lithography, and a method for generating radiation by means of a power operated discharge source. [Prior Art] A whip device is a machine that applies a desired pattern to a substrate, usually to a target portion of one of the substrates. The lithography apparatus can be used, for example, in the manufacture of integrated circuits (ic). In that case, a patterned element, or a patterned element referred to as a reticle or main reticle, can be used to create a circuit pattern to be formed on the individual layers of the buckle. This pattern can be transferred onto a target portion (e.g., a portion containing a die or a plurality of dies) on a substrate (e.g., a germanium wafer). Transfer of the pattern is typically achieved by imaging onto a layer of radiation-sensitive material (resist) provided on the substrate. In general, a single substrate will contain a network of adjacent target portions that are sequentially patterned. Known lithography devices include so-called steppers in which each target portion is illuminated by exposing the entire pattern onto the target portion at a time; and a so-called scanner in which the scan is performed in a given direction "direction" illuminates each target portion by scanning the substrate synchronously in parallel or anti-parallel in this direction via the radiation beam scanning pattern. It is also possible for the patterning element to self-pattern the pattern by imprinting the pattern onto the substrate. Transfer to the substrate. In order to reduce the critical dimension of the component, the lithography projection device can be configured with a source of extreme ultraviolet (EUV) radiation. The EUV radiant ό ό τ also ", __ v 铷 source can be, for example, discharge plasma In the radiation source, a substance (for example, gas or) is generated between the anode and the cathode, and the temperature can be generated by flowing the plasma (the ohmic heating of 127071.doc 1378327 is used to generate the temperature. Discharge plasma. In addition to in-band EUV radiation, the actual EUV source also produces out-of-band radiation and debris, the latter severely limiting the operational life of the reflective optics near the source. In the case of 'different three types of debris: slow atomic debris: heating atoms, that is, according to the Maxwell distribution has a random direction and speeding; fast atomic debris: with a general Ions, neutrals, and nanoclusters of high ballistic velocity parallel to the Euv radiation emitted by the source; microparticles: microscopically sized ballistic particles and droplets that are also substantially parallel to the Euv radiation. Debris reduces the reflectivity of subsequent optics by etching, while slow atomic debris and microparticles reduce reflectivity by contaminating the surface. Therefore, anti-crush components or debris reduction or removal strategies should be used to maintain EUV. Ample output power of the lithography tool. PCT Patent Application Publication No. WO 2005/025280 describes an EUV radiation source in which the anode and cathode are formed by a wheel that is wetted in a tank containing a liquid metal such as Sn. The debris is picked up by the film on the electrode and transported back to the slot. However, most of the debris is directed to the optics of the lithography device. This debris may be applied by One of the foils of a voltage of several thousand volts is deflected by an additional electrode configuration. [Invention] It is desirable to, for example, reduce the number of particles originating from one of the electrodes of a plasma source or prevent it from reaching the EUV optics. 127071.doc 1378327 According to one of the present invention, the power source can be used as a power source for generating radiation to be spaced apart from each other by a distance -, ::: at least two electrodes, the at least two electrodes ^ ^ ^ _ The mode is configured in a discharge space t, and the _ is allowed to be at a point between the respective s fields of the s: ???========================================================= At least - continuation of pure:: = visible 'at the same time that the particular part is indeed from that point of electricity. In one embodiment, the ray, .s yuleron/origin further contains a configuration to apply gold at the beta The surface of the upper surface of the earth, and once configured to direct the January b beam to the load of at least one of the energy beam elements of the energizing medium of the U. In one embodiment, at least one of the electrodes A wedge surface. In one embodiment, each of the electrodes includes a recess and the active regions f are in the recesses, and the discharge source further includes a configuration to direct an energy beam to the Wait for the middle beam component. Energy Light on the Medium In one embodiment, each of the electrodes can be rotatably mounted around the axis of rotation. According to another aspect, a radiation system is provided comprising: - an optical component having an optical axis; and - a power operated discharge source configured to produce a light shot, the discharge 127071.doc side comprising At least two electrodes disposed at a distance from each other in a discharge space t, which allows forming an electrical component in a point between the respective Z regions of the electrodes, wherein the optical component The optical axis is at the same time as the point 'and the at least one of the respective regions is invisible to at least a particular portion of the light-emitting element, and the portion of the material is indeed received from the plasma at the point To radiation. In an embodiment, the radiation system comprises a first debris barrier having a radiation transmittance, the first debris barrier being constructed and configured to prevent origination in the respective regions of action: The broken genus reaches the optical element. The light projecting system can include a second crushing barrier wall configured and configured to prevent debris from the first of the respective ones of the respective active regions from reaching the optical component. The radiation system can include a second debris barrier wall constructed and configured to prevent debris from a second one of the respective zones of action from reaching the optical component. Preferably, the - or both of the first debris barrier and the second debris barrier are rotatable foil traps (f0il tra preferably, a weight 1 also the spinnable foil trap configuration = power operated Each of the opposite sides of the power supply includes a plurality of blades rotatably disposed on the winding line, and the rotatable depressions are (4) force-operated power supply positioning so that the rotatably At most half of each of the cross sections of the cross-section can be illuminated by the source. According to another aspect, a lithography apparatus is provided, comprising: a == operational power supply 'which is configured to generate', the The power source "at least two electrodes, the at least two electrodes being disposed in a discharge space _ 127071.doc 1378327 at a distance from each other, which allows plasma to be formed at a point between the respective active regions of the electrodes; An illumination system configured to adjust a radiation beam, the illumination system comprising an optical component facing the discharge source, wherein an optical axis of the optical component intersects the point;
一支撐件，其經建構以支撐一圖案化元件，該圖案化元 件經組態以在該輻射光束之橫截面中賦予該輻射光束一圖 案以形成一經圖案化之輻射光束； 一基板台，其經建構以固持一基板；及 :投影系統，其經组態以將該經圖案化之輻射光束投影 至該基板之一目標部分上， 其中該等各別區域中之至少__者對於該光學元件之至少 一特定部分係不可見的’同時該特定部分至少在使用中自 該點接收到輻射。 根據本發明之另一觫槐， 〜、樣k供一種用於借助於一電力操 作式放電源而產生輻射 —^ 耵之万去’其中電漿在配置於-放電 工間中之兩個電極之各別 ^ ^ ^ 匕砜之間的一點p中被點 l，其中在一待被輻射之 作姥 干70件之—光軸與該點ρ相交 的情况下，該等各別區域 一# 至夕一者對於該光學元件之 p接收到輕射。 门時該特定部分確實自該點 【實施方式】 之一實施例的微影裝 圖1示意性地描纷-根據本發明 置。該裝置包含： 127071.doc 1378327 -電漿輻射源s〇，其經配置以產生EUV輻射；a support member configured to support a patterned element, the patterned element configured to impart a pattern of the radiation beam in a cross section of the radiation beam to form a patterned radiation beam; a substrate stage Constructed to hold a substrate; and: a projection system configured to project the patterned radiation beam onto a target portion of the substrate, wherein at least __ of the respective regions are for the optical At least a particular portion of the component is invisible 'while the particular portion receives radiation from that point, at least in use. According to another aspect of the present invention, a sample k is used for generating radiation by means of a power-operated discharge source, wherein the plasma is disposed in two electrodes disposed in the discharge chamber. Each of the ^ ^ ^ 匕 sulfone points in a point p is a point l, in a case where the radiation is to be dried 70 pieces - the optical axis intersects the point ρ, the respective areas one # One of them received a light shot for p of the optical element. The specific portion of the door is indeed from this point. [Embodiment] The lithography of one embodiment is schematically illustrated in accordance with the present invention. The apparatus comprises: 127071.doc 1378327 - a plasma radiation source, configured to generate EUV radiation;
_ 一 /亏染物障壁CB，其經配置以阻斷來自 之邱八- 呵术目茲輻射源SO 之邵分染物； Β ； 照明系統（照明器）IL，其經組態以調節—輻射光束 --支撐結構(例如，光罩台)MT，其經建構以支撐一圖 :::件(例如，光罩)MAJ_連接至一第一***I : 疋位器PM經組態以根據特定參數而準確地定位該 案化元件； °x --基板台（例如，晶圓台）WT，其經建構以固持—基板 (例如’塗佈有抗蝕劑之晶圓）W且連接至一第二*** pw’該第二***pw經組態以根據特定參數而 位該基板；及 --投影系統(例如’透射型反射投影透鏡系統)ps，苴 :組態以將一由圖案化元件MA賦予至輻射光束B之圖案投 至基板W之-目標部分c(例如，包含—或多個晶粒）上。 ‘、、、月系、”先可包括用於引導、成形或控制輻射的各種類型 之光學組件’諸如折射、反射、磁性、電磁、靜電或其他 類型之光學組件或其任何組合。 >該支撐結構以取決於圖案化元件之定向、微影裝置之設 。十及諸如圖案化元件是否固持於真空環境中之其他條件的 方式固持圖案化元件。支#結構可使用機械、真空、靜電 ㈣㈣㈣元件。支撐結構可為框架或 台，（例如)其可視需要為固定的或可移動的。支撐結構可 127071.doc 1378327 確保圖案化元件(例如)相對於投影系 可認為本文令對術語"主光罩"或，,光罩紅要位置處。 通用之術語"圖案化元件，，同義。 何使用均與更 術語”圖案化元件"廣義解釋為指代 •光束之橫截面中賦予該輻射光束-圖案以 -部分_產生—圖案㈣何元件。應注意， 二。’右被賦予至IS射光束之圖案包括相移特徵或所 •助特徵’則該圖案可能不會精確對應於基板之目標 所要圖案。大體而言，被賦予至韓射光束之圖案 將對應於元件(諸如積體電路)中正在目標 特定功能層。 . 目案化元件可為透射型或反射型的。圖案化元件之實例 .包括光罩、可程式化鏡面陣列及可程式化LCD面板。光罩 在微影術中係熟知的’且包括諸如二元交變相移及衰減相 移之光罩類型以及各種混合光罩類型。可程式化鏡面陣列 ，之-實例採用小鏡面之矩陣配置，該等小鏡面中每一者可 個別地傾斜以便在不同方向上反射入射輻射光束。傾斜鏡 面將-圖案賦予由鏡面矩陣反射之轄射光束中。 本文中所使用之術語"投影系統"應廣義解釋為涵蓋任何 . 類型之投影系統’包括折射、反射、反射折射、磁性、電 磁及靜電光干系統’或其任何組合，只要其適用於所使用 之曝光輻4適合於諸如浸液之使用 < 真空之使用的其 他因素可〜為本文中對術語”投影透鏡"之任何使用與更 通用之術語"投影系統"同義。 127071.doc •12- 1378327 如此處所描繪，該裝置為反射型（例如，採用反射光 罩）。或者’該裝置可為透射型（例如，採用透射光罩）。 微影裝置可為具有兩個（雙平臺）或兩個以上基板台（及/ 或兩個或兩個以上支撐結構）之類型。在該等"多平臺"機器 中，可並行使用額外台及/或支撐結構，或可在一或多個 台及/或支撐結構上執行預備步驟同時將一或多個其他台 及/或支撐結構用於曝光。_ a loss-damage barrier CB configured to block the Shao dyes from the source of the Qiu-Essence source of radiation; Β; illumination system (illuminator) IL, which is configured to adjust - the radiation beam a support structure (for example, a reticle stage) MT, which is constructed to support a picture::: (eg, reticle) MAJ_ is connected to a first locator I: 疋 positioner PM is configured to Accurately positioning the documented component with specific parameters; °x - substrate stage (eg, wafer table) WT constructed to hold a substrate (eg, 'pad coated with resist) W and connected to a second locator pw' the second locator pw is configured to position the substrate according to a particular parameter; and - a projection system (eg, a 'transmissive reflective projection lens system) ps, 苴: configured to The patterning element MA imparts a pattern to the radiation beam B onto the target portion c of the substrate W (e.g., containing - or multiple grains). ', ,, Month," may include various types of optical components for guiding, shaping, or controlling radiation, such as refractive, reflective, magnetic, electromagnetic, electrostatic, or other types of optical components, or any combination thereof. The support structure holds the patterned component in a manner dependent on the orientation of the patterned component, the lithography device, and other conditions such as whether the patterned component is held in a vacuum environment. The structure can use mechanical, vacuum, electrostatic (4) (4) (4) The support structure can be a frame or a table, for example, which can be fixed or movable as desired. The support structure can be 127071.doc 1378327 to ensure that the patterned element (for example) relative to the projection system can be considered to have the term " The main mask " or, the mask red is at the position. The general term "patterned component, synonymous. What is the use of the term and the term "patterned component" is broadly interpreted to refer to the cross section of the beam The radiation beam-pattern is imparted with -part_-pattern (four) and what components. It should be noted that two. The pattern assigned to the IS beam by the right includes a phase shifting feature or a helping feature, and the pattern may not exactly correspond to the desired pattern of the substrate. In general, the pattern imparted to the Han beam will correspond to the target specific functional layer in the component (such as an integrated circuit). The meshing element can be transmissive or reflective. Examples of patterned components include a reticle, a programmable mirror array, and a programmable LCD panel. Photomasks are well known in lithography and include reticle types such as binary alternating phase shift and attenuation phase shifting, as well as various hybrid mask types. The programmable mirror array, the example, uses a matrix configuration of small mirrors, each of which can be individually tilted to reflect the incident radiation beam in different directions. The tilted mirror imparts a pattern to the illuminating beam reflected by the mirror matrix. The term "projection system" as used herein shall be interpreted broadly to cover any type of projection system 'including refractive, reflective, catadioptric, magnetic, electromagnetic, and electrostatic light drying systems' or any combination thereof, as long as it is suitable for use in The exposure radiation 4 used is suitable for use such as immersion <other factors of vacuum use - any use of the term "projection lens" herein is synonymous with the more general term "projection system" .doc • 12-1378327 As depicted herein, the device is reflective (eg, using a reflective reticle). Or 'the device can be transmissive (eg, with a transmissive reticle). The lithography device can have two ( Two platforms) or two or more substrate stages (and/or two or more support structures). In these "multi-platform" machines, additional stages and/or support structures may be used in parallel, or A preliminary step is performed on one or more stages and/or support structures while one or more other stages and/or support structures are used for exposure.
微影裝置亦可為如下類型；其中基板之至少一部分可被 具有相對較高之折射率的液體（例如，纟）所覆蓋以便填充 投影系統與基板之間的空fB卜亦可將浸液塗覆至微影裝置 中之其他空間’例如’在光罩與投影系統之間的空間。浸 λ技術在此項技術中係熟知的，以用於增加投影系統之數 值孔徑。如本文中所使用之術語"浸沒"並不意謂將諸如基 板之結構淹沒於液體中，而僅意謂在曝光期間液體位於投 影系統與基板之間。 顆射難經印 求奶|罕堡 接收帛射光束。舉例而言，當該ϋ射源為準分子雷射 時，該轄射源與微影较置可為獨立之實體。在該等狀況 下，不認為該輕射源形成微影裝置之部分，且轄 助於包含（例如）合適夕g丨.曾 週之引導鏡面及/或光束放大器的光 遞系統BD而自輻射 下與^ 心原吣傳遞至照明器IL。在其他狀況 下，舉例而言，當転私 史 射原為一水銀燈時，該輻射源可為微 衫裝置之一整體部八 ± 刀。輻射源SO及照明器IL與光束傳遽备 統BD-起被稱作輪射系統。 得遞糸 127071.doc -13 - ^78327 μ Γ明魏可包含—用於調節輻射光束之角強度分布的調 節器》大體而言，至少可調節照明器之瞳孔平面中之強度 分布的外部徑向範圍及/或内部徑向範圍(通常分別稱作… • 卜（σ 〇Uter)&a•内（cr-inner))。另外，照明器IL可包含諸如 * #光器及聚光11之各種其他組件。照明器可用以調節籍射 - 光束以在其橫截面中具有所要均—性及強度分布。 輻射光束B人射於固持在支樓結構（例如，光罩台）附上 _ 目案化70件（例如，光罩）MA上，J·由圖案化元件圖案 化。穿越圖案化元件MA後，輕射光束B穿過投影系統ps， 投影系統PS將該光束聚焦至基板w之一目標部分[上。借 助於第二***pw及位置感測器奶（例如，干涉量測元 • 件、線性編碼器或電容式感測器），基板台WT可準確地移 (例如）以便在輻射光束B之路徑中定位不同目標部分 類似地，（例如）在自光罩庫以機械方式獲取之後或在 掃描期間，第一***PM及另一位置感測器m可用以相 • ^於輻射光束8之路徑準確地定位圖案化元件MA。一般而 :’支樓結構MT之移動可借助於形成第—***pM之部 • 77的一長衝程模組（粗定位）及一短衝程模組（精定位）而實 現。類似地，基板台资之移動可使用形成第二***― . t部分的-長衝程模組及-短衝程模組而實現。在步進器 (與掃瞄器相對)之狀況下’支撐結構Μτ可僅連接至一短衝 程致動器，或可為固定的。可使用圖案化元件對準標記 Ml、M2及基板對準標記P1、？2來使圖案化元件ma及基板 W對準。儘管所說明之基板對準標記佔據專用目標部分， 127071.doc 1378327 但其可位於目標部分之間的空間（此等已知為劃道對準標 記）中。類似地，當在圖案化元件μα上提供一個以上晶粒 的情況下，圖案化元件對準標記可位於晶粒之間。 所描繪之裝置可用於以下模式中之至少一者中： 1. 在步進模式中，當將一被賦予至輻射光束之整個圖案 一次性投影至一目標部分C上時，使支撐結構Μτ&基板台 WT保持基本上靜止（亦即，單次靜態曝光）。接著使基板台 WT在X及/或γ方向上移位以使得可曝光一不$目標部分 C。在步進模式中，曝光場之最大大小限制了在單次靜態 曝光中成像之目標部分C的大小。 2. 在掃描模式中，當將一被賦予至輻射光束之圖案投影 至目私部分C上時，同步地掃描支撐結構河丁及基板台 WT(亦即，單次動態曝光）。可藉由投影系統PS之放大率 (縮小率）及影像反轉特徵來判定基板台WT相對於支撐結構 Μτ(速度及方向。在掃描模式中，曝光場之最大大小限 制了在早次動態曝光中之目標部分的寬度（在非掃描方向 上）而掃描運動之長度決定了目標部分之高度（在掃描方 向上）。 另模式中，當將一被賦予至輕射光束之圖案投影 心。P 77 C上時使支撐結構MT基本上保持靜止以固持 、2案化元件，並移動或掃描基板台WT^在此模式中， :。吊採用一脈衝式輻射源，且在基板台WT之每次移動之 " 掃十田期間之連續輻射脈衝之間視需要更新可程式化 圖案化元杜 -re 干。可易於將此操作模式應用至利用可程式化圖 12707l.d〇i •15· 1378327 案化元件（諸如為以上所提及之類型的可程式化鏡面陣列） 的無光罩微影術。 亦可採用以上所述使用模式之組合及/或變體或完全不 同之使用模式。 圖2圖解地展示一根據目前技術狀態之euv源2〇之部 刀。該EUV源20包含由（例如）m〇製成之一陽極21及一陰極 22 °如PCT專利申請公開案WO 20〇5/025280中所述，陽極 21及陰極22(亦稱作電極21、22)可為與金屬熔融物（未圖 不）接觸之可轉動輪，該案全部以引用的方式併入本文 中。在彼狀況下，電極21、22具有如圖2中所示形成角„之 各別旋轉軸線。一雷射束29用以衝擊陰極22以便產生電漿 (例如’ Sn電襞）及-EUV自束（pinch)23。 除帶内EUV輻射之外，EUV源20亦產生帶外輻射及碎 屑’其中後者嚴重限制靠近EUV源20之反射光學器件的操 作壽命。如以上所述，在Sn基輻射源之狀況下，可區別三 種類型之碎屑’亦即’慢速原子碎屑、快速原子碎屑及微 粒子。本發明之一實施例主要集中在微粒子上。 大多數微粒子發源於EUV源20之陽極21及陰極22,詳言 之發源於如圖2中所示的之間發生放電之區域24及25。在 本文件中，將區域24、25稱為"作用區域，^作用區域為電 極21、22之被放電電流穿過之彼等區域。如以箭頭27及28 所指示’碎屑粒子將離開EUV源2〇且將朝向一光學組件 10(在此實例中，為鏡面1〇)行進。參考數字12指示：在此 狀況下鏡面10之整個表面將因此被污染。 127071.doc •16· 圖3展示-根據本發明之一實施例之電漿輻射源s〇之一 部分的橫截面圖’其中歸因於電漿輻射源SO之特定組態， 鏡面10之一特定部分11大體上不被微粒子污染。圖3亦展 示鏡面10之一與電漿23之點p相交的光軸13。圖3展示兩個 電極31、32,其分別具有具備楔形橫截面之輪的形式且可 環繞以虛線3Γ及32,指示之旋轉軸線旋轉。輻射源SO進一 步包含一用以施加金屬熔融物至電極31、32之表面的元 件。如公開案PCT專利申請公開案W0 2005/025280中所 述，該το件可為含有液態金屬之槽。該液態金屬可為（例 如）Sn。電極31、32可包含M〇。 一能量光東元件33經配置以將一能量光束3〇引導至電極 32之一表面上。在操作期間，產生電漿23，且歸因於電場 該電漿在電極31、32之間的一點”自束，從而產生離開 輕射源S Ο之轄射。 如參考數字34、35所指示，歸因於發生於此等作用區域 之間的放電，此等區域產生微粒子及/或其他碎屑且該等 微粒子及/或其他碎屑自此傳播。根據本發明之一實施 例，電極3卜32具有以下此組態：電極31、32之作用區域 對於光學元件H)之至少一特定部分n係不可見的同時該特 定部分11確實自點P接收到輻射。 歸因於圖3中所示之電極31、32之組態，產生（例如）微 粒子之總電極表面面積顯著減小。以數字39及4〇指示之輪 緣之表面現大體上不會產生微粒子，因為其在Euv自束幻 之照明區域之外側。電極31、32自内部將輪緣外、仂與 12707 丨.doc 1378327 EUV自束23遮蔽開》 仍可產生微粒子之部分以數字34及35指示。然而，來自 區域34、35之微粒子被電極31、32自内部阻斷，歸因於 此，大體上僅鏡面10之外部部分被微粒子污染，如被遮蔽 之部分12所指示β大體上無微粒子之區域由圖3中之線7及 8界定。 旋轉轴線之間的角CC確定鏡面10上之阻斷微粒子的區 域。因此，藉由減小角（X，吾人可阻斷愈來愈多之微粒 子。在一實施例中，角等於照明器虬之收集角，以 致在電極處產生之大體上所有微粒子被電極31、32自内部 阻斷而可能無需污染物障壁CB〇然而，當角α減小以便阻 斷更多微粒子時，被電漿輻射源之放電電路封閉之面積增 加，此又增加了放電電路之自感。應注意’使此自感保持 足夠小以允許快速電壓脈衝。通常，需要小於丨5 〇11之 值。在圖3之組態中，並非整個收集角可藉由自我遮蔽加 以保護’而是留下了鏡面10之部分（以被遮蔽之區域12指 不）不受保護。如將參看圖6加以論述，此不受保護之區域 可藉由一污染物障壁（例如，箔陷阱）加以保護。 在圖3中所示之實施例中，自我遮蔽之範圍取決於電極 31、32之邊緣的銳度，該等邊緣分別由電極31、32之面向 彼此之内表面及輪緣39、40界定。此等邊緣特別易受如由 電極31、32之間的放電所引起之電極濺鍍的損害，且因此 可能在操作期間變為圓形。此導致自此等圓形部分產生一 些非吾人所樂見之微粒子。然而，即使在圓形電極的情況 127071.doc -18 - 下與目則技術狀態相比仍存在大量碎屑抑制，因為僅圓 形。卩分將產生碎屑且輪緣39及40之其餘部分仍受遮蔽。 圖4為一根據本發明之另一實施例之電漿輻射源之一部 刀的橫截面圖。在圖4中，電漿輻射源s〇包含電極31、 32，其為有凹口 44、45的《將雷射束30朝向電極32中之凹 口 45而引導’電極32係藉由使電極32旋轉過一液態金屬 (例如，Sn)槽而被一液態金屬膜覆蓋，以該方式產生金屬 蒸氣且金屬蒸氣朝向與電極32中之凹口 45相對的在電極3 i 中之另一凹口 44行進。此幫助確保如圖4中所示將EUV自 束23建立於凹口 44、45之間。以此方式，達成與以上所述 门之自我遮蔽效應’同時電極31、32較不易受賤鐘損 害。 λ 圖5為一根據本發明之另一實施例之電漿輻射源之一部 分的橫截面圖，其中兩個電極3丨、32位於一平面中，亦 尸α 〇且旋轉抽線大體上彼此平行。兩個電極31、32且 有樓形輪緣51、52，且有角的表面不面向光學器件（例 如照明器IL)。在此實施例中’如圖5中所示，無微粒子 之區域由角σ確定。σ之典型值介於4〇。與85。之間，且將取 決於接收輻射之光學器件的組態。 圖6示意性地展示具有自我遮蔽電極31 ' 32之euv源s〇 與在輕射源so之相對側上的兩個旋轉落陷牌（RFT)6〇、61 之組合的一實例。使用此組合，可保護EUV源之基本上整 個收集角（參見67)免受微粒子碎屑，且旋轉箔陷阱60、61 上之熱負載相對較低。收集角之中心部分受自我遮蔽電極 127071.doc -19· 1378327 31、32保護而免受微粒子，而外部部分受灯丁 6〇、“保 濩。由於RFT 60、61之橫截面之至多一半（通常3〇%至 40%)被照明，故其接收相對較低之熱負載且因此可能根據 生產工具規格而進行按比例調整。 圖6展示包含安裝於旋轉軸線65、66上之葉片63、64的 兩個旋轉箔陷阱60、6丨之一基本實施例。旋轉軸線Μ、託 經定位以致旋轉軸線65、66與自束23對準，且旋轉箔陷阱 、61各覆蓋收集角67之不受自我遮蔽電極3ι、32保護之 部分。應注意，如熟習此項技術者將瞭解，為得到良好結 果旋轉軸線65、66未必在同一線上。在圖6之實施例中， 該等可旋轉洛陷时之每一者之橫截面的i多一半可被該 輕射源照射。 自我遮蔽電極31、32及RFT 6G、61之幾何形狀可經設計 以致該組合保護整個收集角（圖6)。當該組態不可能（例 如由於6又汁空間限制）時，一較小區域可不受保護且因 此應加以封閉。即使在此狀況下，總光學透射率仍保持非 常高，亦即，通常>9〇%(不包括用於抑制原子碎屑之靜止 vl陷阱）》圖7為當在旋轉軸線65之方向上觀看時箔陷阱的 之前視圖，其展示發源於旋轉軸線65之葉片63。 儘管本文中可特定參考微影裝置在製造1C中之使用，但 應理解，本文中所述之微影裝置可具有其他冑用，諸如積 體光學系統之製造、用於磁疇記憶體之引導及偵測圖案、 平板顯示器、液晶顯示器（LCD)、薄膜磁頭等。熟習此項 技術者將瞭解，在該等替代應用之情境下，可認為本文中 127071.doc 1378327 對術語"晶圓"或”晶粒”之任何使用分別與更通用之術語"基 板"或"目標部分"同義。可在曝光之前或之後，在（例如）一 軌道（通常將抗蝕劑層塗覆至基板且顯影所曝光之抗蝕劑 的工具）、_度量工具及/或一檢驗工具中處理本文中所提 及之基板。在適用時，可脾太- 町』將本文中之揭示内容應用至該等 及其他基板處理工具。另外，可對基板進行一次以上的處 理，（例如）以便產生多㈣，使得本文中所使用之術語基 板亦可指代已含有多個經處理層之基板。 儘管以上已特定參考在光學微影術之情境下對本發明之 實施例的使用’但將瞭解，本發明可用於其他應用（例 如，麼印微影術）中’且在情境允許時，本發明不限於光 學微影術。在壓印微影術中，圖案化元件中之構形界定產 生於基板上之圖案。可將圖案化元件之構形壓入一提供於 基板之上抗餘劑層中，在該基板上抗姓劑藉由施加電磁輻 射熱、壓力或其組合而固化。在抗钱劑固化之後將圖案 化7L件移出抗蝕劑，從而將圖案留在其中留下。 本文中所使用之術語"輕射"及"光束"涵蓋所有類型之電 磁輻射，包括紫外線（UV)輻射（例如，具有約365础、 nm、248 nm、ι ο ^ η 州 ,-- 93 nm、157 11111或120 nm之波長）及極紫外 線（EUV)輻射（例如’具有在5 nm至20 nm之範圍内的波 長）’以及諸如離子束或電子束之粒子束。注意，本文中 術語"EUV輻射"亦涵蓋軟χ射線輻射。 在隋蟯允許時，術語"透鏡"可指代各種類型之光學組件 中之任-者或其組合’包括折射、反射、磁性、電磁及靜 127071.doc •21- 1378327 電光學組件。 儘S以上已描述本發明之特定實施例，但將瞭解，可以 不同於所述方式的方式實踐本發明。代替Sn，另一類型之 金屬可用於電漿源中。以上描述意欲為說明性而非限制性 '因此熟習此項技術者將顯而易見，在不脫離以下所 陳述之申請專利範圍之料的情況下，可對所述之本發明 作出修改。The lithography device can also be of the type wherein at least a portion of the substrate can be covered by a liquid having a relatively high refractive index (eg, germanium) to fill the void between the projection system and the substrate. The other space that is overlaid into the lithography device 'eg' is the space between the reticle and the projection system. The immersion λ technique is well known in the art for increasing the numerical aperture of a projection system. The term "immersion" as used herein does not mean that a structure such as a substrate is submerged in a liquid, but merely means that liquid is located between the projection system and the substrate during exposure. The ray is difficult to print and ask for milk | Hanbao receives the beam. For example, when the source is a excimer laser, the source and the lithography can be independent entities. Under such conditions, the light source is not considered to form part of the lithography apparatus and is self-radiating, including, for example, a suitable light transmission system BD that guides the mirror and/or beam amplifier. The next and the heart are transmitted to the illuminator IL. In other cases, for example, when the smuggling history is a mercury lamp, the source of radiation may be an integral portion of the micro-shirt device. The radiation source SO and the illuminator IL and the beam-passing system BD are referred to as a firing system.递 糸 127071.doc -13 - ^78327 μ 魏明Wei can contain - a regulator for adjusting the angular intensity distribution of the radiation beam. In general, at least the outer diameter of the intensity distribution in the pupil plane of the illuminator can be adjusted. Range and/or internal radial range (usually referred to as: • σ (〇 ter Uter) & a • inside (cr-inner)). In addition, the illuminator IL may include various other components such as * #光器 and concentrating 11. The illuminator can be used to adjust the home beam - the beam to have the desired uniformity and intensity distribution in its cross section. The radiation beam B is incident on a support structure (e.g., a reticle stage) attached to a 70-piece (e.g., reticle) MA, which is patterned by the patterned elements. After passing through the patterned element MA, the light beam B passes through the projection system ps, and the projection system PS focuses the beam onto a target portion of the substrate w. By means of the second positioner pw and the position sensor milk (for example, an interferometric element, a linear encoder or a capacitive sensor), the substrate table WT can be accurately moved (for example) so that the radiation beam B Positioning different target portions in the path is similar, for example, after mechanically acquiring from the mask library or during scanning, the first positioner PM and the other position sensor m can be used to phase the radiation beam 8 The path accurately positions the patterned element MA. In general: the movement of the branch structure MT can be achieved by means of a long stroke module (coarse positioning) forming a portion of the first positioner pM 77 and a short stroke module (fine positioning). Similarly, the movement of the substrate can be achieved using a long stroke module and a short stroke module that form a second positioner. In the case of a stepper (as opposed to a scanner) the support structure Μτ can be connected only to a short-stroke actuator or can be fixed. The patterned component alignment marks M1, M2 and the substrate alignment marks P1 can be used. 2 Align the patterned element ma and the substrate W. Although the illustrated substrate alignment marks occupy a dedicated target portion, 127071.doc 1378327, it may be located in the space between the target portions (this is known as a scribe alignment mark). Similarly, where more than one die is provided on the patterned element μ, the patterned component alignment marks can be located between the dies. The device depicted can be used in at least one of the following modes: 1. In the step mode, when a whole pattern imparted to the radiation beam is projected onto a target portion C at a time, the support structure Μτ & The substrate table WT remains substantially stationary (i.e., a single static exposure). The substrate stage WT is then displaced in the X and/or gamma directions so that a target portion C can be exposed. In step mode, the maximum size of the exposure field limits the size of the target portion C imaged in a single static exposure. 2. In the scan mode, when a pattern imparted to the radiation beam is projected onto the mesh portion C, the support structure and the substrate table WT (i.e., single dynamic exposure) are simultaneously scanned. The substrate table WT can be determined by the magnification (reduction ratio) and the image inversion feature of the projection system PS relative to the support structure (τ (speed and direction. In the scan mode, the maximum size of the exposure field limits the early dynamic exposure. The width of the target portion in the non-scanning direction (the non-scanning direction) and the length of the scanning motion determine the height of the target portion (in the scanning direction). In the other mode, when a pattern is given to the light beam, the projection is made. When the 77 C is on, the support structure MT is substantially kept stationary to hold, and the component is moved, and the substrate table WT is moved or scanned. In this mode, a pulsed radiation source is used, and each of the substrate stages WT is used. The second movement of the "stream" between the continuous radiation pulses between the need to update the programmable patterning element Du-re dry. It is easy to apply this mode of operation to the use of programmable map 12707l.d〇i •15· 1378327 Maskless lithography of a component (such as a programmable mirror array of the type mentioned above). Combinations and/or variants of the modes of use described above or completely different modes of use may also be used. Fig. 2 diagrammatically shows a knife of an euv source according to the state of the art. The EUV source 20 comprises an anode 21 and a cathode made of, for example, m〇, as in PCT Patent Application Publication No. WO The anode 21 and cathode 22 (also referred to as electrodes 21, 22) may be rotatable wheels in contact with a molten metal (not shown), as described in 20, 5/025, 280, the entire disclosure of which is incorporated herein by reference. In this case, the electrodes 21, 22 have respective axes of rotation forming angles as shown in Figure 2. A laser beam 29 is used to impinge on the cathode 22 to produce a plasma (e.g., 'Sn") and - EUV self-pinch 23. In addition to in-band EUV radiation, EUV source 20 also produces out-of-band radiation and debris, the latter of which severely limits the operational life of the reflective optics adjacent to EUV source 20. As described above, In the case of a Sn-based radiation source, three types of debris can be distinguished, namely, 'slow atomic debris, fast atomic debris, and microparticles. One embodiment of the present invention focuses on the microparticles. Most of the microparticles originate from The anode 21 and cathode 22 of the EUV source 20 are derived in detail as shown in FIG. Areas 24 and 25 where discharge occurs between them. In this document, the regions 24, 25 are referred to as "action regions, and the active regions are the regions through which the discharge currents of the electrodes 21, 22 pass. 27 and 28 indicate that the debris particles will exit the EUV source 2 and will travel toward an optical assembly 10 (in this example, mirror 1). Reference numeral 12 indicates that the entire surface of the mirror 10 will be in this condition. Therefore, it is contaminated. 127071.doc •16· Figure 3 shows a cross-sectional view of a portion of a plasma source s〇 according to an embodiment of the invention, wherein the mirror is due to the specific configuration of the plasma source SO, One of the specific portions 11 is substantially not contaminated by the particles. Figure 3 also shows the optical axis 13 of one of the mirrors 10 intersecting the point p of the plasma 23. Fig. 3 shows two electrodes 31, 32 each having the form of a wheel having a wedge-shaped cross section and which can be rotated around the indicated axes of rotation by arrows 3 and 32. The radiation source SO further includes an element for applying a metal melt to the surfaces of the electrodes 31, 32. The το member may be a tank containing a liquid metal as disclosed in the publication PCT Patent Application Publication No. WO 2005/025280. The liquid metal can be, for example, Sn. The electrodes 31, 32 may comprise M〇. An energy light east element 33 is configured to direct an energy beam 3A onto one surface of the electrode 32. During operation, the plasma 23 is produced and, due to the electric field, the plasma is "self-bundled" at a point between the electrodes 31, 32, thereby producing a detachment from the light source S. As indicated by reference numerals 34, 35 Due to the occurrence of electrical discharge between such active regions, such regions generate microparticles and/or other debris and the microparticles and/or other debris propagate therefrom. According to one embodiment of the invention, the electrode 3 Bu 32 has the configuration that the active area of the electrodes 31, 32 is invisible to at least a particular portion n of the optical element H) while the particular portion 11 does receive radiation from the point P. Due to the The configuration of the electrodes 31, 32 is shown to produce, for example, a significant reduction in the total electrode surface area of the microparticles. The surface of the rim indicated by the numbers 39 and 4 is now substantially free of microparticles because of its self-beaming in the Euv. Outside the illuminating area of the illusion. The electrodes 31, 32 are shielded from the inside of the rim, 仂 and 12707 丨.doc 1378327 EUV from the beam 23. The portion of the granules that can still be produced is indicated by the numbers 34 and 35. However, from the area 34 , 35 of the microparticles are electrodes 31 32 is internally blocked, due to which, in general, only the outer portion of the mirror 10 is contaminated by particles, as indicated by the portion 12 of the masked portion, where substantially no particles are substantially defined by lines 7 and 8 in Fig. 3. The angle CC between the axes determines the area of the mirror 10 that blocks the particles. Thus, by reducing the angle (X, we can block more and more particles. In one embodiment, the angle is equal to the illuminator 虬The collection angle is such that substantially all of the microparticles produced at the electrodes are internally blocked by the electrodes 31, 32 and may not require a contaminant barrier CB. However, when the angle a is reduced to block more particles, it is irradiated by the plasma. The area of the discharge circuit of the source is increased, which in turn increases the self-inductance of the discharge circuit. It should be noted that 'this self-inductance is kept small enough to allow fast voltage pulses. Usually, a value less than 丨5 〇11 is required. In Figure 3 In the configuration, not the entire collection angle can be protected by self-shadowing', but leaving part of the mirror 10 (indicated by the masked area 12) unprotected. As will be discussed with reference to Figure 6, this is not Protected area Protected by a contaminant barrier (eg, foil trap). In the embodiment shown in FIG. 3, the extent of self-shadowing depends on the sharpness of the edges of the electrodes 31, 32, which are respectively by the electrodes 31, The inner surfaces of the faces 32 facing each other and the rims 39, 40 are defined. These edges are particularly susceptible to damage by electrode sputtering as caused by discharge between the electrodes 31, 32, and thus may become round during operation This results in some small particles that are not forgotten from these circular parts. However, even in the case of a circular electrode, there is still a large amount of debris suppression compared to the state of the art, because It is only circular. The split will produce debris and the rest of the rims 39 and 40 will still be obscured. 4 is a cross-sectional view of a blade of a plasma radiation source in accordance with another embodiment of the present invention. In FIG. 4, the plasma radiation source s 〇 includes electrodes 31, 32 which are "not directed to the notch 45 in the electrode 32 with the notches 44, 45". The electrode 32 is made by making the electrode 32 is rotated through a liquid metal (e.g., Sn) bath and covered by a liquid metal film to produce metal vapor in this manner and the metal vapor faces the other recess in the electrode 3 i opposite the recess 45 in the electrode 32. 44 marches. This help ensures that the EUV self-beam 23 is established between the notches 44, 45 as shown in FIG. In this way, the self-shadowing effect of the door described above is achieved. At the same time, the electrodes 31, 32 are less susceptible to damage by the bell. λ Figure 5 is a cross-sectional view of a portion of a plasma radiation source in accordance with another embodiment of the present invention, wherein the two electrodes 3, 32 are located in a plane, and the rotary lines are substantially parallel to each other. . The two electrodes 31, 32 have a floor-shaped rim 51, 52 and the angled surface does not face the optics (e.g., illuminator IL). In this embodiment, as shown in Fig. 5, the region free of microparticles is determined by the angle σ. The typical value of σ is between 4〇. With 85. Between and will depend on the configuration of the optics receiving the radiation. Fig. 6 schematically shows an example of a combination of an euv source s 具有 having a self-shielding electrode 31' 32 and two rotating landing cards (RFT) 6 〇, 61 on the opposite side of the light source source so. Using this combination, substantially the entire collection angle of the EUV source (see 67) is protected from particulate debris and the thermal load on the rotating foil traps 60, 61 is relatively low. The central portion of the collection corner is protected from the microparticles by the self-shielding electrodes 127071.doc -19· 1378327 31, 32, while the outer portion is protected by the lamp, 6 〇. Because of the cross section of the RFT 60, 61 Typically 3% to 40%) are illuminated so they receive a relatively low thermal load and thus may be scaled according to the specifications of the production tool. Figure 6 shows the blades 63, 64 including the mounting on the axes of rotation 65,66. A basic embodiment of one of the two rotating foil traps 60, 6. The axis of rotation Μ, the bracket is positioned such that the axes of rotation 65, 66 are aligned with the self-beam 23, and the rotating foil traps 61 are not covered by the collection angles 67 The portion of the self-shielding electrode 3, 32 is protected. It should be noted that those skilled in the art will appreciate that the rotational axes 65, 66 are not necessarily on the same line for good results. In the embodiment of Figure 6, the rotatable sag The more than half of the cross-section of each of the times can be illuminated by the light source. The geometry of the self-shielding electrodes 31, 32 and RFT 6G, 61 can be designed such that the combination protects the entire collection angle (Fig. 6). This configuration is not possible (for example A small area can be unprotected and therefore should be closed due to the limited space of the juice. Even in this case, the total optical transmittance remains very high, ie, usually >9〇% (not included) Figure 7 is a front view of the foil trap when viewed in the direction of the axis of rotation 65, showing the blade 63 originating from the axis of rotation 65. Although specific reference lithography devices may be used herein. Used in the manufacture of 1C, but it should be understood that the lithography apparatus described herein may have other applications, such as fabrication of integrated optical systems, guidance and detection patterns for magnetic domain memories, flat panel displays, liquid crystals. Display (LCD), thin film magnetic head, etc. Those skilled in the art will appreciate that in the context of such alternative applications, any use of the term "wafer" or "die" in this document can be considered as 127071.doc 1378327 herein. Respectively with the more general term "substrate" or "target portion" synonymous. Before or after exposure, for example, in a track (usually applying a resist layer to the substrate and developing the station) The substrate of the present invention is treated in a light resist tool, a metric tool, and/or an inspection tool. Where applicable, Spleen-cho can apply the disclosure herein to such and others. Substrate processing tool. Additionally, the substrate may be subjected to more than one treatment, for example, to produce multiple (four), such that the term substrate as used herein may also refer to a substrate that already contains multiple processed layers. Use of an embodiment of the invention in the context of optical lithography 'But it will be appreciated that the invention may be used in other applications (eg, lithography) and that the invention is not limited to optical lithography when context permits Surgery. In imprint lithography, the configuration in the patterned element defines the pattern produced on the substrate. The patterning element can be configured to be pressed into an anti-surplus layer on the substrate where the anti-surname agent is cured by application of electromagnetic radiation heat, pressure or a combination thereof. The patterned 7L piece is removed from the resist after the anti-money agent is cured, leaving the pattern left therein. The terms "light shot" and "beam" as used herein encompasses all types of electromagnetic radiation, including ultraviolet (UV) radiation (e.g., having approximately 365 base, nm, 248 nm, ι ο η 州, - wavelengths of 93 nm, 157 11111 or 120 nm) and extreme ultraviolet (EUV) radiation (eg 'having wavelengths in the range from 5 nm to 20 nm') and particle beams such as ion beams or electron beams. Note that the term "EUV radiation" also covers soft ray radiation. As used herein, the term "lens" may refer to any of the various types of optical components, or combinations thereof, including refractive, reflective, magnetic, electromagnetic, and static 127071.doc • 21-1378327 electro-optical components. Specific embodiments of the invention have been described above, but it will be appreciated that the invention may be practiced otherwise than as described. Instead of Sn, another type of metal can be used in the plasma source. The above description is intended to be illustrative, and not restrictive, and it will be apparent to those skilled in the art that the present invention may be modified without departing from the scope of the appended claims.
【圖式簡單說明】 圖1描繪根據本發明之一實施例的微影裝置； 圖2為根據目前技術狀態之電漿輻射源之一部分的橫戴 面圖； 圖3為根據本發明之一實施例之電漿輻射源之一部分的 橫截面圖； 圖4為根據本發明之另一實施例之電漿輻射源之一部分 的橫截面圊；及 圖5為根據本發明之另一實施例之電漿輻射源之一部分 的橫截面圖； 圖6示意性地展示-電聚輻射源與根據一實施例之兩個 旋轉箔陷阱之組合的一實例； 圖7為圖6之實施例之可旋轉落陷阱的前視圖。 【主要元件符號說明】 7 線 8 線 10 光學組件/鏡面 127071.doc -22- 1378327BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 depicts a lithography apparatus according to an embodiment of the present invention; FIG. 2 is a cross-sectional view of a portion of a plasma radiation source according to the state of the art; FIG. 3 is an embodiment of the present invention. 4 is a cross-sectional view of a portion of a plasma radiation source; FIG. 4 is a cross-sectional view of a portion of a plasma radiation source in accordance with another embodiment of the present invention; and FIG. 5 is an electrical representation in accordance with another embodiment of the present invention. A cross-sectional view of a portion of a plasma source; FIG. 6 schematically illustrates an example of a combination of a source of electro-optic radiation and two rotating foil traps in accordance with an embodiment; FIG. 7 is a rotatable drop of the embodiment of FIG. The front view of the trap. [Main component symbol description] 7-wire 8-wire 10 Optical components/mirrors 127071.doc -22- 1378327
11 鏡面之特定部分 12 被遮蔽之部分/被遮蔽之區域 13 光轴 20 EUV源 21 陽極/電極 22 陰極/電極 23 EUV自束/電漿 24 作用區域 25 作用區域 27 箭頭 28 箭頭 29 雷射束 30 能量光束/雷射束 31 電極 31’ 旋轉軸線 32 電極 32' 旋轉軸線 33 能量光束元件 34 作用區域 35 作用區域 39 輪緣 40 輪緣 44 凹口 45 凹口 127071.doc -23- 137832711 Part of the mirror surface 12 Part of the shield/masked area 13 Optical axis 20 EUV source 21 Anode/electrode 22 Cathode/electrode 23 EUV self-beam/plasma 24 Active area 25 Active area 27 Arrow 28 Arrow 29 Laser beam 30 energy beam / laser beam 31 electrode 31' axis of rotation 32 electrode 32' axis of rotation 33 energy beam element 34 active area 35 active area 39 rim 40 rim 44 notch 45 notch 127071.doc -23- 1378327
51 輪緣 52 輪緣 60 旋轉箔陷阱（RFT) 61 旋轉箔陷阱（RFT) 63 葉片 64 葉片 65 旋轉軸線 66 旋轉軸線 67 收集角 B 輻射光束 BD 光束傳遞系統 C 目標部分 CB 污染物障壁 IL 照明系統（照明器） IFi 位置感測器 IF2 位置感測器 Ml 圖案化元件對準標記 M2 圖案化元件對準標記 M.A 圖案化元件 MT 支撐結構 P 點 PI 基板對準標記 P2 基板對準標記 PM 第一*** 127071.doc •24- 1378327 PW 第二定位 PS 投影糸統 so 輻射源 w 基板 WT 基板台 a 角 σ 角 127071.doc -25-51 Flange 52 Flange 60 Rotating foil trap (RFT) 61 Rotating foil trap (RFT) 63 Blade 64 Blade 65 Rotation axis 66 Rotation axis 67 Collection angle B Radiation beam BD Beam delivery system C Target section CB Contaminant barrier IL Illumination system (illuminator) IFi position sensor IF2 position sensor M1 patterned element alignment mark M2 patterned element alignment mark MA patterned element MT support structure P point PI substrate alignment mark P2 substrate alignment mark PM first Positioner 127071.doc •24- 1378327 PW Second Positioning PS Projection System So Radiation Source w Substrate WT Substrate Table a Angle σ Angle 127071.doc -25-