TWI377645B - Ohmic contact having silver material - Google Patents

Ohmic contact having silver material Download PDF

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TWI377645B
TWI377645B TW098115083A TW98115083A TWI377645B TW I377645 B TWI377645 B TW I377645B TW 098115083 A TW098115083 A TW 098115083A TW 98115083 A TW98115083 A TW 98115083A TW I377645 B TWI377645 B TW I377645B
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layer
silver
ohmic contact
contact electrode
containing metal
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TW098115083A
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TW201041088A (en
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Chih Hung Wu
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Atomic Energy Council
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/452—Ohmic electrodes on AIII-BV compounds
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    • H01L31/02—Details
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    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/01078—Platinum [Pt]
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10329—Gallium arsenide [GaAs]
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    • H01L2924/11—Device type
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    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
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Description

1377645 \ ’: 六、發明說明： 【發明所屬之技術領域】 本發明係有關於一種含銀金屬歐姆接觸電極，尤指一種具 低電阻率（Electric Resistivity )與高熱導率（Themal
Conductivity)之歐姆接觸電極’特別係以銀為材料，可與目 月'J業界製程相容’並使生產成本降低者。 【先前技術】
幾乎所有之半導體元件都需要低阻抗之歐姆接觸，以使元 件特性最佳化。高阻抗接觸由於在元件操作期間會在其與半導 萝材;料之接觸接面產生過熱，進而使元件特性劣化。一般傳統 上最常使用於砷化鎵（GaAs)半導體之歐姆電極，盆姑料糸 以需要合金彳㈣化蝴（AuGe/Ni)。由該AuGe/== 為歐姆電極之材料，係使其可由在400°C〜500°C之退火 (Anneal)溫度製造與GaAs半導體歐姆接觸之歐姆電極。 然而，由於其歐姆電極係以金為材料，請參閱『第2圖 所示，依據金屬銀與金屬金在電阻率與熱導率特性之分析上^ ^ ^屬金之電阻率並不若金屬銀之低，且熱導率亦無金屬銀 少得向，此外，以金為材料之價格亦遠比以銀為材料昂貴許 多。因此使用金屬金雖可供於業界使用，唯其生產成本眚 難以滿足可供大量生產之考量。故，—般·者係無法符合^ 用者於實際使用時之所需。 【發明内容】 本發明之主要目的係在於，克服習知技藝所遭遇之上述問 3 ίίίί—種低她率與高鮮率之歐姆接觸，特別传以 銀為=、’可與目前業界製程相容，並使生產成本降低i 今、上之目的本發明係—種含銀金屬歐姆接觸電極， 2姆接觸電極係利用蒸鍍法或電鍍法將—騎、—錯声― S^層或_、及一厚膜金屬層依順序沉積在一型 該歐姆上顺成’錢彻敎處理而形成 =觸電極。其中，該低電阻率與高熱導率之歐姆接觸電 係糟由_上述各金顧之厚度並配合退火溫度而形成。 【實施方式】 + /參閱第1圖及第2圖』所示，係分別為本發 貫施例之結構剖面示意圖' 及本發明含銀金屬之歐姆接觸電極 其電阻率與解轉性分析示意®。如騎示：本發明係一種 含銀金屬歐姆接觸電極，該歐姆接觸電極i係由一鎳（Ni)層 1 1、-鍺(Ge)層1 2、-銀(Ag)層丄3、一鈀⑽日 層或翻⑻層1 4、及一厚膜金屬（ThickMetal)層1 5所 組成，並順序堆疊在一 n型m_v族化合物半導體層2上且 經300°C〜500X溫度之退火（Anneal)處理所形成之結構體。 其中，該錦層之厚度範圍係介於Injn〜2〇nm之間，該錯層之 厚度範圍係介於lnm〜5〇nm之間，該銀層之厚度範圍係介於 5nm〜20〇nm之間，以及該鈀層之厚度範圍係介於2〇nm〜 200nm之間；此外，若採用該鉑層者則其厚度範圍係介於i〇nm 〜200nm之間。 於一較佳實施例中，由該鎳層1 1、該鍺層丄2、該銀層 1 3、該鈀層或鉑層14、及該厚膜金屬層15所組成之歐姆 接觸電極1，其形成係先利.用蒸鍍法或電鍍法將上述各金屬層 順序沉積在該η型ΙΠ·ν族化合物半導體層2上，於其中，本 實施例使狀η型m_v魏合物半導體層2料—神化錄 (GaAs)。 /後利用退域理，形成低餘率恤耐⑽心办） 與高熱導率（Thermal Conductivity )之歐姆接觸電極1β其中， 該歐姆接觸電極丨係藉由控制上述各金屬層之厚度，並配合退 火處理之耿溫度’制具有健卩辑與高鮮率之歐姆接觸 電極1 ;而於本實施例中，該錄層之厚度範圍係為1〇肺，該 鍺層之厚度範圍係介於Inm〜5Gnm，該銀層之厚度範圍係介 於5nm 200nm ’且该銀層與該鍺層之厚度比例範圍係介於 卸/Ge=7〜8之間，以及該纪層之厚度範圍係大於斷爪，或 •白層之厚度範圍係大於5〇nm，並配合退火溫度約至働。c， 即可形成含銀金屬之歐姆接觸電極丨（如第2圖所示）。另外， 該η型m-v族化合物半導體層2係可選自發光二極體、雷射 二極體、太陽電池及電晶體任一者。 在本發明中，該歐姆接觸電極係以銀為材料，與傳統以金 為材料比較’其較優越處係在於金屬銀比一般常使用之金屬金 具有較良好之導電性及熱導性，可與目前業界製程相容，更因 銀比金之價格較便宜（如第2_示），故可有效地降低生產 成本。 综上所述’本發明係一種含銀金屬歐姆接觸電極，可有效 改善習用之種種缺點’具低電阻率與高熱導率之歐姆接觸電 極，係以銀為材料’可與目前#界製程相容，並有效地使生產 成树低’進而使本發明之産生能更進步、更實用、更符合使 用者之所須’確已符合創作專利申請之要件，絲法提 申請。 惟以上所述者，僅為本發明之較佳實施例而已，當不能以 此限定本判實施之範gj;故，凡依本發明_請專利範圍及新 型說明書内容所作之簡單的等效變化與修飾，皆應仍屬本發明 專利涵蓋之範圍内。 【圖式簡單說明】 第1圖’係本發明-較佳實施例之結構剖面示意圖。 第2圖，係本發明含銀金屬之歐姆接觸電極其電阻率與熱 導率特性分析示意圖。 【主要元件符號說明】 歐姆接觸電極1 鎳層1 1 鍺層1 2 銀層1 3 鈀層或鉑層1 4 厚膜金屬層1 5 η型III-V族化合物半導體層2

Claims (1)

137.7645 、 101年.09月07日梭正替换頁 七、申清專利範圍： 1 ·一種含銀金屬歐姆接觸電極，係包括： 一歐姆接觸電極，係由一鎳（Ni)層、一鍺（Ge) 20 i 2/9/7
層 銀（Ag)層、一鈀（pd)層或翻（ρ〇層及一厚膜金屬 (ThickMetal)層所組成，並順序堆疊在一 n型m v族化合 物半導體層·^退火（Anneal)處理卿成之結構體，其中 該銀層與忒鍺層之厚度比例範圍係介於Ag/Ge=7〜8之間者。
2. 依申請專利範圍第1項所述之含銀金屬歐姆接觸電極，其中， 該η型Ill-v族化合物半導體層係為砷化鎵（GaAs)。 3. 依申請專利範圍第1項所述之含銀金屬歐姆接觸電極，其中， 該錄層之厚度範圍係介於 lnm〜20nm之間者。 4. 依申請專利範圍第1項所述之含銀金屬歐姆接觸電極，其中， 該錯層之厚度範圍係介於 lnm〜50nm之間者。 5·依申請專利範圍第1項所述之含銀金屬歐姆接觸電極，其中， δ亥銀層之厚度範圍係介於5nm〜200nm之間者。 6·依申請專利範圍第1項所述之含銀金屬歐姆接觸電極，其中， 該把層之厚度範圍係介於20nm〜200nm之間者。 7 ·依申請專利範圍第1項所述之含銀金屬歐姆接觸電極，其中 該链層之厚度範圍係介於10nm〜200nm之間者。 8·依申凊專利範圍第1項所述之含銀金屬歐姆接觸電極，其中 該退火處理之溫度範圍係介於3〇〇〇c〜5〇〇°C之間。 9 ’依申请專利範圍第1項所述之含銀金屬歐姆接觸電極，其中， s玄η型ΙΠ-V族化合物半導體層係可選自發光二極體、雷射二 極體、太陽電池及電晶體任一者。 098115083、 1013342988-0 7
TW098115083A 2009-05-07 2009-05-07 Ohmic contact having silver material TWI377645B (en)

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US20100012175A1 (en) * 2008-07-16 2010-01-21 Emcore Solar Power, Inc. Ohmic n-contact formed at low temperature in inverted metamorphic multijunction solar cells
CN112599613A (zh) * 2020-12-16 2021-04-02 中国电子科技集团公司第十八研究所 一种与锗结合的空间用砷化镓太阳电池电极制备方法
CN113889541A (zh) * 2021-10-29 2022-01-04 中国电子科技集团公司第十八研究所 一种空间用砷化镓太阳电池下电极

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US5646069A (en) * 1995-06-07 1997-07-08 Hughes Aircraft Company Fabrication process for Alx In1-x As/Gay In1-y As power HFET ohmic contacts
EP1548852B1 (en) * 2003-12-22 2013-07-10 Samsung Electronics Co., Ltd. Top-emitting nitride-based light emitting device and method of manufacturing the same
JP4224041B2 (ja) * 2004-08-26 2009-02-12 シャープ株式会社 半導体レーザ素子、半導体レーザ素子の製造方法、光ディスク装置および光伝送システム

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