TWI366916B - Solid-state imaging device and imaging apparatus - Google Patents

Solid-state imaging device and imaging apparatus

Info

Publication number
TWI366916B
TWI366916B TW096144142A TW96144142A TWI366916B TW I366916 B TWI366916 B TW I366916B TW 096144142 A TW096144142 A TW 096144142A TW 96144142 A TW96144142 A TW 96144142A TW I366916 B TWI366916 B TW I366916B
Authority
TW
Taiwan
Prior art keywords
solid
imaging device
imaging apparatus
state imaging
state
Prior art date
Application number
TW096144142A
Other languages
English (en)
Other versions
TW200847419A (en
Inventor
Yoshiaki Kitano
Keiji Tatani
Shinya Watanabe
Kouji Yahazu
Yosuke Isoo
Masaru Suzuki
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2006341120A external-priority patent/JP2008153500A/ja
Priority claimed from JP2007046546A external-priority patent/JP4479734B2/ja
Application filed by Sony Corp filed Critical Sony Corp
Publication of TW200847419A publication Critical patent/TW200847419A/zh
Application granted granted Critical
Publication of TWI366916B publication Critical patent/TWI366916B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14632—Wafer-level processed structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14868—CCD or CID colour imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
TW096144142A 2006-12-19 2007-11-21 Solid-state imaging device and imaging apparatus TWI366916B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006341120A JP2008153500A (ja) 2006-12-19 2006-12-19 固体撮像装置及びカメラ
JP2007046546A JP4479734B2 (ja) 2007-02-27 2007-02-27 固体撮像装置及び撮像装置

Publications (2)

Publication Number Publication Date
TW200847419A TW200847419A (en) 2008-12-01
TWI366916B true TWI366916B (en) 2012-06-21

Family

ID=39803119

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096144142A TWI366916B (en) 2006-12-19 2007-11-21 Solid-state imaging device and imaging apparatus

Country Status (3)

Country Link
US (2) US7800041B2 (zh)
KR (1) KR20080057141A (zh)
TW (1) TWI366916B (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101476367B1 (ko) * 2008-01-29 2014-12-26 삼성전자주식회사 이미지 센서의 제조 방법
JP5428394B2 (ja) * 2009-03-04 2014-02-26 ソニー株式会社 固体撮像装置とその製造方法、および撮像装置
JP5564874B2 (ja) * 2009-09-25 2014-08-06 ソニー株式会社 固体撮像装置、及び電子機器
JP2011204878A (ja) * 2010-03-25 2011-10-13 Sony Corp 固体撮像デバイスおよび電子機器
JP2014029984A (ja) * 2012-06-29 2014-02-13 Canon Inc 固体撮像素子及び撮像装置
KR20140112793A (ko) * 2013-03-14 2014-09-24 삼성전자주식회사 이미지 센서 및 그 제조 방법
JP6598436B2 (ja) * 2014-08-08 2019-10-30 キヤノン株式会社 光電変換装置、撮像システム、及び光電変換装置の製造方法
TWI669819B (zh) * 2014-11-28 2019-08-21 日商半導體能源研究所股份有限公司 半導體裝置、模組以及電子裝置
TWI539385B (zh) * 2015-01-28 2016-06-21 金佶科技股份有限公司 光動能指紋辨識模組
US9923003B2 (en) * 2015-06-30 2018-03-20 Microsoft Technology Licensing, Llc CMOS image sensor with a reduced likelihood of an induced electric field in the epitaxial layer
US10276616B2 (en) * 2017-08-31 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor device
CN111430386B (zh) 2020-04-01 2023-11-10 京东方科技集团股份有限公司 光电探测器、显示基板及光电探测器的制作方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3070513B2 (ja) 1997-04-07 2000-07-31 日本電気株式会社 固体撮像素子及びその製造方法
JP2001035849A (ja) 1999-07-19 2001-02-09 Mitsubishi Electric Corp 半導体装置
JP2003243764A (ja) * 2002-02-19 2003-08-29 Matsushita Electric Ind Co Ltd 半導体レーザおよびその製造方法
JP2005033110A (ja) 2003-07-10 2005-02-03 Matsushita Electric Ind Co Ltd 固体撮像素子及びその製造方法
JP4878117B2 (ja) 2004-11-29 2012-02-15 キヤノン株式会社 固体撮像装置及び撮像システム
JP2006073885A (ja) 2004-09-03 2006-03-16 Canon Inc 固体撮像装置、その製造方法、およびデジタルカメラ
JP2006278539A (ja) 2005-03-28 2006-10-12 Matsushita Electric Ind Co Ltd Ｍｏｓ型固体撮像装置
JP2006332124A (ja) 2005-05-23 2006-12-07 Matsushita Electric Ind Co Ltd 固体撮像素子及びその製造方法
JP2007243100A (ja) 2006-03-13 2007-09-20 Iwate Toshiba Electronics Co Ltd 固体撮像装置およびその製造方法
JP2009077098A (ja) * 2007-09-20 2009-04-09 Sony Corp 固体撮像素子及びその駆動方法
JP2009295918A (ja) * 2008-06-09 2009-12-17 Panasonic Corp 固体撮像装置及びその製造方法

Also Published As

Publication number Publication date
US20080283727A1 (en) 2008-11-20
US20090278031A1 (en) 2009-11-12
KR20080057141A (ko) 2008-06-24
US7800041B2 (en) 2010-09-21
US7807953B2 (en) 2010-10-05
TW200847419A (en) 2008-12-01

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees