TWI366876B - A novel deposition-plasma cure cycle process to enhance film quality of silicon dioxide - Google Patents
A novel deposition-plasma cure cycle process to enhance film quality of silicon dioxideInfo
- Publication number
- TWI366876B TWI366876B TW096119169A TW96119169A TWI366876B TW I366876 B TWI366876 B TW I366876B TW 096119169 A TW096119169 A TW 096119169A TW 96119169 A TW96119169 A TW 96119169A TW I366876 B TWI366876 B TW I366876B
- Authority
- TW
- Taiwan
- Prior art keywords
- silicon dioxide
- film quality
- cycle process
- cure cycle
- enhance film
- Prior art date
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title 2
- 235000012239 silicon dioxide Nutrition 0.000 title 1
- 239000000377 silicon dioxide Substances 0.000 title 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
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- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
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- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US80348106P | 2006-05-30 | 2006-05-30 | |
US11/753,968 US7902080B2 (en) | 2006-05-30 | 2007-05-25 | Deposition-plasma cure cycle process to enhance film quality of silicon dioxide |
Publications (2)
Publication Number | Publication Date |
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TW200807558A TW200807558A (en) | 2008-02-01 |
TWI366876B true TWI366876B (en) | 2012-06-21 |
Family
ID=38779413
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096119169A TWI366876B (en) | 2006-05-30 | 2007-05-29 | A novel deposition-plasma cure cycle process to enhance film quality of silicon dioxide |
Country Status (6)
Country | Link |
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EP (1) | EP2036120A4 (zh) |
JP (1) | JP5225268B2 (zh) |
KR (1) | KR101115750B1 (zh) |
CN (1) | CN101454877B (zh) |
TW (1) | TWI366876B (zh) |
WO (1) | WO2007140377A2 (zh) |
Families Citing this family (32)
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US7498273B2 (en) * | 2006-05-30 | 2009-03-03 | Applied Materials, Inc. | Formation of high quality dielectric films of silicon dioxide for STI: usage of different siloxane-based precursors for harp II—remote plasma enhanced deposition processes |
WO2009114617A1 (en) * | 2008-03-14 | 2009-09-17 | Applied Materials, Inc. | Methods for oxidation of a semiconductor device |
US8329587B2 (en) * | 2009-10-05 | 2012-12-11 | Applied Materials, Inc. | Post-planarization densification |
CN102054734B (zh) * | 2009-11-10 | 2013-01-30 | 中芯国际集成电路制造(上海)有限公司 | 提高晶圆沟道填充能力的方法 |
US8528224B2 (en) * | 2009-11-12 | 2013-09-10 | Novellus Systems, Inc. | Systems and methods for at least partially converting films to silicon oxide and/or improving film quality using ultraviolet curing in steam and densification of films using UV curing in ammonia |
US8512809B2 (en) | 2010-03-31 | 2013-08-20 | General Electric Company | Method of processing multilayer film |
US8318584B2 (en) * | 2010-07-30 | 2012-11-27 | Applied Materials, Inc. | Oxide-rich liner layer for flowable CVD gapfill |
US9234276B2 (en) | 2013-05-31 | 2016-01-12 | Novellus Systems, Inc. | Method to obtain SiC class of films of desired composition and film properties |
US10325773B2 (en) | 2012-06-12 | 2019-06-18 | Novellus Systems, Inc. | Conformal deposition of silicon carbide films |
US8889566B2 (en) | 2012-09-11 | 2014-11-18 | Applied Materials, Inc. | Low cost flowable dielectric films |
WO2014106202A1 (en) * | 2012-12-31 | 2014-07-03 | Fei Company | Depositing material into high aspect ratio structures |
US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
CN103972146B (zh) * | 2013-01-30 | 2016-12-28 | 中芯国际集成电路制造(上海)有限公司 | 沟槽隔离结构的形成方法 |
US9354508B2 (en) | 2013-03-12 | 2016-05-31 | Applied Materials, Inc. | Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor |
SG11201506367TA (en) * | 2013-03-15 | 2015-09-29 | Applied Materials Inc | Apparatus and methods for pulsed photo-excited deposition and etch |
JP5943888B2 (ja) * | 2013-08-28 | 2016-07-05 | 株式会社東芝 | 半導体装置の製造方法 |
US20150340274A1 (en) * | 2014-05-23 | 2015-11-26 | GlobalFoundries, Inc. | Methods for producing integrated circuits with an insultating layer |
US9412581B2 (en) | 2014-07-16 | 2016-08-09 | Applied Materials, Inc. | Low-K dielectric gapfill by flowable deposition |
KR20160061129A (ko) * | 2014-11-21 | 2016-05-31 | 주식회사 원익아이피에스 | 적층막 제조방법 |
US10041167B2 (en) * | 2015-02-23 | 2018-08-07 | Applied Materials, Inc. | Cyclic sequential processes for forming high quality thin films |
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US10115601B2 (en) * | 2016-02-03 | 2018-10-30 | Tokyo Electron Limited | Selective film formation for raised and recessed features using deposition and etching processes |
US9768034B1 (en) * | 2016-11-11 | 2017-09-19 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
CN106783535A (zh) * | 2016-11-28 | 2017-05-31 | 武汉新芯集成电路制造有限公司 | 一种改善peteos薄膜缺陷的方法和半导体结构 |
CN116892014A (zh) * | 2017-04-13 | 2023-10-17 | 应用材料公司 | 用于沉积低介电常数膜的方法与设备 |
CN109166787B (zh) * | 2018-08-26 | 2019-06-28 | 合肥安德科铭半导体科技有限公司 | 一种氧化硅薄膜的可流动化学气相沉积方法 |
US20200090980A1 (en) * | 2018-09-13 | 2020-03-19 | Nanya Technology Corporation | Method for preparing semiconductor structures |
WO2020081367A1 (en) | 2018-10-19 | 2020-04-23 | Lam Research Corporation | Doped or undoped silicon carbide deposition and remote hydrogen plasma exposure for gapfill |
KR102224128B1 (ko) | 2019-08-05 | 2021-03-09 | 한양대학교 산학협력단 | 탄소 함유 박막의 증착방법 |
JP7227122B2 (ja) | 2019-12-27 | 2023-02-21 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム |
JP7072012B2 (ja) | 2020-02-27 | 2022-05-19 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、基板処理装置、及びプログラム |
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JP2684942B2 (ja) * | 1992-11-30 | 1997-12-03 | 日本電気株式会社 | 化学気相成長法と化学気相成長装置および多層配線の製造方法 |
US5576071A (en) * | 1994-11-08 | 1996-11-19 | Micron Technology, Inc. | Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organic precursor compounds |
US5558717A (en) | 1994-11-30 | 1996-09-24 | Applied Materials | CVD Processing chamber |
JPH0982696A (ja) * | 1995-09-18 | 1997-03-28 | Toshiba Corp | 半導体装置の製造方法および半導体製造装置 |
JP3522917B2 (ja) * | 1995-10-03 | 2004-04-26 | 株式会社東芝 | 半導体装置の製造方法および半導体製造装置 |
JPH11145131A (ja) * | 1997-03-18 | 1999-05-28 | Toshiba Corp | 半導体装置の製造方法及び半導体製造装置、及び半導体装置 |
US6413583B1 (en) * | 1998-02-11 | 2002-07-02 | Applied Materials, Inc. | Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound |
US6197658B1 (en) * | 1998-10-30 | 2001-03-06 | Taiwan Semiconductor Manufacturing Company | Sub-atmospheric pressure thermal chemical vapor deposition (SACVD) trench isolation method with attenuated surface sensitivity |
US6387207B1 (en) | 2000-04-28 | 2002-05-14 | Applied Materials, Inc. | Integration of remote plasma generator with semiconductor processing chamber |
JP4698813B2 (ja) * | 2000-10-19 | 2011-06-08 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US6531413B2 (en) * | 2000-12-05 | 2003-03-11 | United Microelectronics Corp. | Method for depositing an undoped silicate glass layer |
US6770521B2 (en) * | 2001-11-30 | 2004-08-03 | Texas Instruments Incorporated | Method of making multiple work function gates by implanting metals with metallic alloying additives |
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US6830624B2 (en) | 2003-05-02 | 2004-12-14 | Applied Materials, Inc. | Blocker plate by-pass for remote plasma clean |
US6958112B2 (en) * | 2003-05-27 | 2005-10-25 | Applied Materials, Inc. | Methods and systems for high-aspect-ratio gapfill using atomic-oxygen generation |
KR100538882B1 (ko) * | 2003-06-30 | 2005-12-23 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
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TW200807558A (en) | 2008-02-01 |
JP2009539266A (ja) | 2009-11-12 |
CN101454877B (zh) | 2012-07-04 |
CN101454877A (zh) | 2009-06-10 |
KR101115750B1 (ko) | 2012-03-07 |
KR20090019865A (ko) | 2009-02-25 |
WO2007140377A2 (en) | 2007-12-06 |
WO2007140377A3 (en) | 2008-08-28 |
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