1362739 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種使用半導體光學裝置之高頻信號傳 輸光學裝置，及其製造方法。 【先前技術】 應用於高頻信號傳輸光學模組之半導體光學裝置，通 常係以陶瓷封裝體或塑膠封裝體建構（例如，參見日本專利 公報第200 1 - 1 89515號）。理由是：當執行高頻信號傳輸時 ’需要在半導體光學裝置本身的封裝體上形成TEM波傳輸 線’如共平板線和微帶線。 【發明內容】 本發明之發明人已詳細硏究傳統的光學模組，結果發 現下列之問題。 換言之’在上述之光學模組中，因爲要形成TEM波傳 輸線，所以其中存在著會使半導體光學裝置的封裝體結構 變得較複雜，而且會妨礙降低成本之問題。 爲了要克服上述之問題，本發明之目的係要提供一種 藉由使用應用非常多用途的金屬罐封裝體之半導體光學裝 置，而可以很容易地實行高頻信號傳輸之高頻信號傳輸光 學模組，及其製造方法。 爲了達成上述之目的，根據本發明之高頻信號傳輸光 學模組，包含半導體光學裝置和外導線。該半導體光學裝 置具有半導體光學元件，將半導體光學元件容納在其中之 金屬罐封裝體，及經由提供在金屬罐封裝體之心柱中的穿 透孔突出之信號傳輸接腳。外導線係安裝在心柱尾端表面 1362739 上’而且在信號傳輸接腳的兩側上，沿著信號傳輸接腳延 -伸。 . 尤其是’根據本發明之高頻信號傳輸光學模組，每一 個該外導線都具有藉由彎曲各外導線的終端部分所提供的 固定部分’而固定部分被固定在心柱的尾端表面，其中其 係藉由彎曲終端部分提供在各外導線的心柱側。 在此高頻信號傳輸光學模組中，外導線可以很容易地 裝在半導體光學裝置之心柱的尾端表面。例如，在外導線 已經彎曲的情形下，可以藉由焊接物、導電黏著物或類似 φ 物質的使用’將外導線的固定部分固定在心柱的尾端表面 上’或是在外導線尙未彎曲的情形下，先藉由雷射焊接或 類似方式，將固定部分固定在心柱的尾端表面上，然後再 彎曲外導線。如此，因爲在半導體光學裝置之信號傳輸接 腳的兩側上，沿著信號傳輸接腳延伸之外導線，係被裝在 尾端表面上’所以當外導線被連接到地電位時，接地區域 係藉由心柱和個別的外導線連續提供在導線接腳的兩側上 。因此’因爲TEM波傳輸線係藉由信號傳輸接腳、心柱和 擊 個別的外導線形成’所以可以傳輸高頻信號到半導體光學 裝置。藉由上面之說明，根據此高頻信號傳輸光學模組， 藉由使用應用非常多用途的金屬罐封裝體之半導體光學裝 置，而可以很容易地實行高頻信號傳輸。 固定部分最好藉由雷射焊接固定在心柱的尾端表面上 。若使用雷射焊接，用以固定在固定部分和心柱之間，則 因爲固定部分和心柱的加熱可以做的足夠局部而且可以短 1362739 時間加熱’所以可以防止半導體光學裝置的半導體光學元 件等受到熱不利的影響。此外，因爲藉由雷射焊接之固定 力量很強，例如，所以在外導線尙未彎曲的情形下，固定 部分被固定在心柱的尾端表面上，然後再彎曲外導線之案 例中，藉由雷射焊接之固定特別有效。 外導線的固定部分最好至少具有類平板形式。例如， 在外導線尙未彎曲的情形下，固定部分被固定在心柱的尾 端表面上’然後再彎曲外導線之案例中，若至少外導線的 固定部分具有類平板形式，則可以很容易地執行外導線的 彎曲。此外’因爲外導線的固定部分係要與心柱的尾端表 面作表面接觸’所以外導線可以以很穩定的狀況確實安裝 在心柱的尾端表面上。 再者’在外導線的柄側終端部分被彎曲之部分，最好 是軟弱的部分’以易於形成彎曲。與上述之情形類似，例 如’在外導線尙未彎曲的情形下，固定部分被固定在心柱 的尾端表面上，然後再彎曲外導線之案例中，當易於彎曲 之軟弱部分被形成在外導線的柄側終端部分之部分時，外 導線的彎囲可以很容易地且精確地執行。 此外’根據本發明，高頻信號傳輸光學模組之製造方 法’包含下列步驟：製備可以將半導體光學元件容納在金 屬罐封裝體中’和使信號傳輸接腳自形成在金屬罐封裝體 心柱中的穿透孔突出之半導體光學裝置；將其一端爲固定 部分之線型外導線配置在該等信號傳輸接腳的兩側上，並 將該等固定部分固定至預定位置，使得該等固定部分之表 1362739 面係接觸該心柱之尾辆表面的預疋位置；當該等固定部分 被固定到該心柱的尾端表面上時，及分別彎曲該等外導線 ，使在信號傳輸接腳的兩側上沿著信號傳輸接腳延伸。 根據此高頻信號傳輸光學模組的製造方法，藉由非常 簡單的方法，在個別的導線接腳兩側上，沿著個別的導線 接腳延伸之外導線，可以安裝在半導體光學裝置之心柱的 尾端表面上，因此會有藉由信號傳輸接腳，心柱和個別的 外導線形成TEM波傳輸線的問題。換言之，可以實行高頻 信號傳輸之高頻信號傳輸光學模組，可以藉由使用應用非 常多用途的金屬罐封裝體之半導體光學裝置製造。 由下面只是當作說明而非要限制本發明之詳細說明和 附圖，將會更完整地瞭解本發明。 由下面之詳細說明，本發明之可應用性更廣的範圍將 會更清楚。但是，此處應該瞭解詳細的說明和特定的範例 ，可是根據此詳細的說明，在本發明的精神和範圍內之各 .種不同的變化例和修正例，對於那些熟悉此項技術之人士 都會很明顯，所以本發明所指出之優選實施例只是當作說 明。 【實施方式】 下面，將參照第1圖到第1 1圖，詳細說明根據本發明 之高頻信號傳輸光學模組及其製造方法的實施例。在圖式 的說明方面，相同的構件將以相同的數字表示，而且不會 重複其說明。 如第1圖所示，高頻信號傳輸光學模組1具有半導體 1362739 光學裝置2。對於此半導體光學裝置2,在由心柱3和帽蓋 . 4所組成的ΤΟ-CAN型金屬罐封裝體5中，容納能夠高速 · 操作之光二極體（半導體光學元件）6’用以將光二極體6的 · 電流信號轉換成電壓信號之放大器7、及電容器8和9。& 金屬罐封裝體5的帽蓋4中，形成可以穿透由光二極體6 所接收之光的開口 4a’而且在此開口 4a中，有安裝玻璃板 11。此處，在開口 4a中，有時會安裝透鏡，以取代玻璃板 11° 再者，在金屬罐封裝體5的心柱3中，形成4個穿透 φ 孔12，然後在各個穿透孔12中，在貫穿的情形下配置導 線接腳1 3。這些貫穿孔1 2的內壁表面和導線接腳1 3之間 的間隙藉由玻璃密封體14密封。在金屬罐封裝體5的內部 ’各導線接腳1 3係經由金屬線連接到各構件。具體來說， 相鄰的導線接腳1 3 a和1 3 b分別連接到放大器7的正邏輯 信號輸出墊和負邏輯信號輸出墊。此外導線接腳13c係經 由電容器8連接到放大器7的電源塾，而導線接腳i3d則 經由電容器9連接到光二極體6的陰極墊。 φ 此處’在金屬罐封裝體5的內部，放大器7的GND墊 係經由金屬線連接到心柱3。此外，接地接腳1 7則藉由以 銅鋅合成焊接到心柱3的尾端表面上。 如第2圖所示’在上述結構之半導體光學裝置2的心 柱3尾端表面3a’有安裝3個類平板外導線18。詳而言之 ’在包含導線接腳13a和13b的平面上，各外導線18係配 置在導線接腳13a外部、導線接腳13b外部、及在導線接腳 1362739 1 3a和導線接腳13b之間，而且大致平行導線接腳13a和13b 延伸。對於各個外導線1 8，藉由彎曲外導線1 8之心柱3側 部分，提供將固定部分19固定在心柱3的尾端表面3a上。 在本實施例上，在3個外導線18之外，外導線18a和 18c係在信號傳輸接腳之導線接腳13a的兩側上，沿著導線 接腳13a延伸。此外，外導線18b和18c係在信號傳輸接 腳之導線接腳1 3 b的兩側上，沿著導線接腳1 3 b延伸。 此處，因爲接地接腳1 7和外導線1 8具有和心柱3相 同的電位，所以這些全都當作GND端。但是，接地接腳1 7 和外導線1 8是不同的，接地接腳1 7係在製造用於心柱3 的材料時安裝，而外導線18則是在接近製造高頻信號傳輸 光學模組1之最後階段時連接。 在上述結構之高頻信號傳輸光學模組1中，外導線1 8 可以很容易安裝在半導體光學裝置2之心柱3的尾端表面 3 a上。例如，這使得可以在外導線1 8已經彎曲的情形下 ，藉由使用焊接物、導電黏著物或類似物質，將固定部分 19固定在心柱3的尾端表面3a上，或是在外導線18尙未 彎曲的情形下，先藉由雷射焊接或類似方式，將固定部分 19固定在心柱3的尾端表面3a上，然後再彎曲外導線18 。如此，因爲在半導體光學裝置2之信號傳輸接腳的各個 導線接腳13a和13b兩側上，沿著各個導線接腳13a和13b 延伸之外導線係被安裝在心柱3的尾端表面3a上， 所以當外導線被連接到地電位時，接地區域係藉由心柱3 和各個外導線18連續提供在各個導線接腳13a和13b的兩 側上。因此，因爲TEM波傳輸線係藉由各個導線接腳1 3 a -10- 1362739 和Γ3 b，心柱3和各個外導線1 8形成，所以可以半導體光 -學裝置2輸出高頻信號。藉由上面之說明，根據此高頻信 _ 號傳輸光學模組藉由使用應用非常多用途的金屬罐封 -裝體5之半導體光學裝置2，而可以很容易地實行高頻信 號傳輸。 其次，舉一個局頻信號傳輸光學模組1之製造方法的 範例，說明藉由使用YAG雷射之貫穿焊接（雷射焊接），各 個外導線18的固定部分19被固定在半導體光學裝置2之 心柱3的尾端表面3a上之情形。 | 首先’如第3圖所示，在製備上述之半導體光學裝置 2。此外，如第4圖所示，製備藉由並排上述外導線i8a、 18b和18c構成之類平板導線框架21。此導線框架21之一 端部分爲固定部分19’而另一端部分爲各個外導線18，係 藉由整體形成的矩形連接部分22連接。在每一個外導線 18中’藉由在其兩邊緣部分上形成凹口部分23，在要安置 在心柱3的尾端表面3a上時要彎曲的部分，形成很容易彎 曲之軟弱部分24(相對於此軟弱部分24，在其中一端側上 鲁 之一部分變成固定部分19)。此外，在連接部分22，還有 形成一對定位孔25。此處’導線框架21係由金屬材料製成 的’如k〇var，而且在其表面上’還應用電鍍處理，如電鑛 金或類似材料。此外，導線框架21提供之厚度爲〇.2 mm， 使得可以很容易又很精確地藉由YAG雷射執行貫穿焊接。 在製備半導體光學裝置2和導線框架21之後，如第5 圖所示’這些都是被安裝到固定夾具31。換言之，在提供 -11- 1362739 在固定夾具（jig)31背板32之正面側的放置座33上 放置半導體光學裝置2的金屬罐封裝體5，而且在 放置座33之正面側的支撐座34之V型槽中，配置 光學裝置2之導線接腳13c和13d«接著，以站立 供一對定位接腳35在背板32之正面上，穿入導線 之定.位孔25，使導線框架21的各固定部分19對著 光學裝置2之心柱3的尾端表面3a接觸。 在固定夾具31中，放置座33、支撐座34和定 3 5之間彼此的定位關係說明如下。換言之，如第6 ，當半導體光學裝置2和導線框架21被安裝在固 31上時，其關係爲連接導線框架21的各外導線18 部分24中央的直線S(即，直線S連接各外導線1 8 部分23的中央部分）’與其爲信號傳輸接腳之各導 13a和13b的接地接腳17側面接觸。 在將半導體光學裝置2和導線框架21安裝在固 31上之後，如第7圖所示，藉由從可在水平方向移 射光發射部分30，依序朝向各固定部分19發射雷 ，各固定部分19被貫穿焊接在心柱3之尾端表面 定位置。此時，因爲各外導線18具有類平板形式， 外導線18的固定部分19可以表面接觸心柱3的尾 3 a，因此，在穩定的條件下，外導線1 8可以確密安 柱3的尾端表面3a上。此外，藉由應用使用Yag 貫穿焊接在固定部分1 9和心柱3之間的固定，因爲 分1 9和心柱3的加熱可以有足夠局部和足夠短的時 ，側邊 提供在 半導體 方式提 框架21 半導體 位接腳 圖所示 定夾具 之軟弱 之凹口 線接腳 定夾具 位之雷 射光L 3a的預 所以各 端表面 裝在心 雷射之 固定部 間加熱 -12- 1362739 ，所以可以防止加熱的傷害效應對半導體光學裝置2之各 - 構件造成影響。 \ 之後，半導體光學裝置2和導線框架21自固定夾具 · 31解開，如第8圖所示，並且同時彎曲導線框架21的各 外導線18,以在其爲信號傳輸接腳之各導線接腳13a和13b 的兩側上，沿著各導線接腳13a和13b延伸。此時，因爲 各外導線18具有類平板形式’而且，因爲軟弱部分24已 經形成在各外導線1 8上，所以可以很容易地和很精確地執 行導線框架21之各外導線18的彎曲。此外，當照此執行鲁 導線框架2 1之各外導線1 8的彎曲時，因爲藉由使用YAG 雷射之貫穿焊接的固定力量很強，所以對應用到固定部分 1 9和心柱3之間的固定之貫穿焊接特別有效。 最後，藉由切割器切斷導線框架2 1的連接部分2 2側 ，使各外導線18具有預定長度，於是完成高頻信號傳輸光 學模組1。 根據上述局頻信號傳輸光學模組1之製造方法，藉由 非常簡單的方法，在其爲信號傳輸接腳之各導線接腳13a · 和1 3 b的兩側上’沿著各導線接腳〗3 a和i 3 b延伸之外導 線18a ' 18b和18c，可以被安裝在半導體光學裝置2之心 柱3的尾端表面3a上，因此可以藉由各導線接腳i3a和13b 、心柱3、及各外導線丨8，形成teM波傳輸線。因此，可 以實現高頻信號傳輸之高頻信號傳輸光學模組1,可以藉 由使用應用非常多用途的金屬罐封裝體5之半導體光學裝 置2製造。 -13- 1362739 其次，將說明有放置高頻信號傳輸光學模組1之電路 -板，當作高頻信號傳輸光學模組1的使用範例。 . 如第9圖到第1 1圖所示，高頻信號傳輸光學模組1被 _ 安裝在電路板41，而電路板41係插在導線接腳13a和13b 與導線接腳13c和13d之間。在電路板41之導線接腳13a 、13b側的表面41a上，信號傳輸導線42a與其爲信號傳輸 接腳之導線接腳〗3a的側面製成接觸，而信號傳輸導線42a 則與其爲信號傳輸接腳之導線接腳13b的側面形成接觸。 各信號傳輸導線42a和42b係朝向放置在電路板41上之信鲁 號處理電路延伸，而且連接到此信號處理電路。 在電路板41的表面41a，在信號傳輸導線42a的外部 ，接地導線43a與高頻信號傳輸光學模組1之外導線1 8的 側面形成接觸。同樣地，在信號傳輸導線42b的外部，接 地導線4 3 b與外導線1 8 b的側面形成接觸。各接地導線4 3 a 和4 3 b係沿著各信號傳輸導線4 2 a和4 2 b，離各信號傳輸 導線42a和42b —預定的距離形成，而且連接到接地電位 • 再者，在電路板41的表面41a，在信號傳輸導線42a 和信號傳輸導線42b之間，接地導線44與高頻信號傳輸光 學模組1之外導線1 8c的側面形成接觸。此接地導線44係 沿著各信號傳輸導線42a和42b，離各信號傳輸導線42a 和42b —預定的距離形成，而且連接到接地電位。 此處’各導線42a、42b、43a、43b和44係藉由將導 電材料，如銅，印刷在電路板41的基底材料上形成圖案所 -14- 1362739 製成的。此外，各導線接腳13a和13b與各信號傳輸導線 42a和42b，係藉由焊接物、導電黏著物或類似物質確實連 接。同樣地，各外導線18a、18b和18c與各接地導線43a 、43b和44，也藉由焊接物、導電黏著物或類似物質確實 連接。 在上述建構之電路板41中，信號傳輸線係由其爲高頻 信號傳輸光學模組1之信號傳輸接腳的導線接腳13a、和 信號傳輸導線42a形成。在此信號傳輸線的兩側上，沿著 信號傳輸線之接地區，係由心柱3，各外導線1 8 a和1 8 c， 及各接地導線43a和44連續提供。此結構類似於由其爲高 頻信號傳輸光學模組〗之信號傳輸接腳的導線接腳13b， 和信號傳輸導線4 2 b形成之信號傳輸線結構。因此，因爲 會形成TEΜ波傳輸線，所以可以自提供在金屬罐封裝體5 內部之放大器7信號高頻信號。 在此，即使當在高頻信號傳輸光學模組1之心柱3的 尾端表面3a和電路板41的邊緣部分之間有空隙形成時，因 爲有上述之TEM波傳輸線形成，所以可以有高頻信號傳輸 。但是，爲了減少高頻信號傳輸光學模組1側和電路板4 1 側之間的阻抗差配，最好儘可能減少心柱3的尾端表面3 a 和電路板41的邊緣部分之間的空隙。此外，在空隙中，也 有提供介電質材料，如矽樹脂，之配置，以覆蓋各導線接 腳13a和13b及各外導線18’以減少阻抗誤匹配（mismatching) 之影響。 本發明並非受限於上述之實施例。例如，雖然上述實 施例已用於容納在金屬罐封裝體5之中的放大器7具有兩 -15- 1362739 個差動信號輸出之案例，但是放大器7可具有一個信號輸 出（換言之，單端型）。在此案例中，因爲係單獨提供當作 信號傳輸接腳之導線接腳13，所以提供兩個外導線18就 足以將導線接腳1 3夾在中間。 上述實施例已被用於半導體光學裝置2之案例中，其 中該半導體光學裝置2具有作爲半導體光學元件之光接收 元件的光二極體6,和連接到光二極體6之放大器7,但是 ，對於半導體光學裝置2之半導體光學元件，可以提供一 個光二極體，其爲光偵測器、或光發射器，如雷射二極體 。在光發射器之案例方面，其爲信號傳輸接腳之導線接腳 13具有當作信號輸入接腳的功能。 此外，雖然上述實施例已用於整個外導線18都具有類 平板形式之案例，但是只要至少外導線1 8之固定部分1 9 具有類平板形式即可，例如，在外導線1 8尙未彎曲的情形 下，固定部分1 9被固定在在心柱3 .的尾端表面3a上，然 後再彎曲外導線1 8之案例中，外導線1 8的彎曲可以很容 易執行。此外，因爲外導線1 8之固定部分1 9係要製作與 心柱3的尾端表面3 a表茴接觸，所以在穩定情形下，外導 線1 8可以精確地安裝在心柱3的尾端表面3 a上。 再者，在上述實施例中，對於高頻信號傳輸光學模組 1之製造方法的範例，已經說明各外導線1 8之固定部分1 9 ，藉由雷射焊接固定到半導體光學裝置2之心柱3的尾端 表面3a上之案例，固定部分19可以藉由使用焊接物、導 電黏著物或類似物質，固定到心柱3的尾端表面3 a上。 1362739 根據本發明如此詳細之說明’明顯地’本發明之實施 - 例可以在許多方式下作改變。這樣的改變將不會脫離本發 明之精神和範圍，而且所有對於熟悉此項技術之人士將是 - 非常明顯之這樣的修正，都包含在後面申請專利範圍之範 圍內。 產業應用性 根據本發明，藉由使用應用非常多用途的金屬罐封裝 體之半導體光學裝置，可以很容易實行高頻信號傳輸。 【圖式簡單說明】 φ 第1圖爲根據本發明之高頻信號傳輸光學模組之一實 施例的透視圖； 第2圖爲從導線接腳側看入示於第1圖之高頻信號傳 輸光學模組時的透視圖； 第3圖爲從導線接腳側看入半導體光學裝置時的透視 圖； 第4圖爲導線框架平面圖； 第5圖爲半導體光學裝置和導線框架已被安裝在固定 鲁 夾具之情形的透視圖； 第ό圖爲半導體光學裝置和導線框架之間的位置關係 圖， 第7圖爲藉由雷射焊接，將導線框架固定到半導體光 學裝置之心柱的透視圖； 第8圖爲被固定到半導體光學裝置之心柱的導線框架 被彎曲之情形的透視圖；.. -17- 1362739 第9圖爲已將示於第1圖之高頻信號傳輸光學模組放 置在其上之電路板的正視圖； 第10圖爲示於第9圖之高頻信號傳輸光學模組和電路 板的左視圖；及 第11圖爲示於第9圖之高頻信號傳輸光學模組和電路 板的下視圖。 【主要元件符號說明】 1 局 頻 信 號 傳輸光學模組 2 半 導 體 光 學裝置 3 心 柱 5 金 屬 罐 封 裝體 6 光 二 極 體 (半導體光學元件） 12 穿 透 孔 1 3 a, 1 3 b 導 線 接 腳 (信號傳輸接腳） 1 8，1 8 a，1 8 b，1 8 c 外導線1362739 IX. Description of the Invention: The present invention relates to a high-frequency signal transmission optical device using a semiconductor optical device, and a method of fabricating the same. [Prior Art] A semiconductor optical device applied to a high-frequency signal transmission optical module is usually constructed of a ceramic package or a plastic package (for example, see Japanese Patent Publication No. 2001-189515). The reason is that when performing high-frequency signal transmission, it is necessary to form TEM wave transmission lines such as a common flat line and a microstrip line on the package of the semiconductor optical device itself. SUMMARY OF THE INVENTION The inventors of the present invention have studied the conventional optical module in detail, and found the following problems. In other words, in the optical module described above, since the TEM wave transmission line is to be formed, there is a problem that the package structure of the semiconductor optical device becomes complicated and the cost is hindered. In order to overcome the above problems, an object of the present invention is to provide a high frequency signal transmission optical module capable of easily performing high frequency signal transmission by using a semiconductor optical device of a metal can package having a very versatile application. And its manufacturing method. In order to achieve the above object, a high frequency signal transmission optical module according to the present invention comprises a semiconductor optical device and an outer lead. The semiconductor optical device has a semiconductor optical element, a metal can package in which the semiconductor optical element is housed, and a signal transmission pin protruding through a through hole provided in a stem of the metal can package. The outer conductor is mounted on the rear end of the stem 1362739 and extends along the signal transmission pins on both sides of the signal transmission pin. In particular, according to the high-frequency signal transmission optical module of the present invention, each of the outer wires has a fixed portion provided by bending a terminal portion of each of the outer wires, and the fixed portion is fixed to a tail end surface of the stem. Wherein it is provided on the stem side of each of the outer leads by the bent terminal portion. In this high-frequency signal transmission optical module, the outer lead can be easily mounted on the trailing end surface of the stem of the semiconductor optical device. For example, in the case where the outer wire has been bent, the fixing portion of the outer wire can be fixed to the trailing end surface of the stem by the use of a solder, a conductive adhesive or the like φ substance or the outer wire is not bent. Next, the fixed portion is fixed to the trailing end surface of the stem by laser welding or the like, and then the outer lead is bent. Thus, since the wires extending along the signal transmission pins on both sides of the signal transmission pins of the semiconductor optical device are mounted on the trailing end surface, so when the external wires are connected to the ground potential, the grounding region It is continuously provided on both sides of the wire pins by the stem and the individual outer wires. Therefore, since the TEM wave transmission line is formed by the signal transmission pin, the stem and the individual outer conductors, it is possible to transmit a high frequency signal to the semiconductor optical device. According to the above description, according to the high-frequency signal transmission optical module, high-frequency signal transmission can be easily performed by using a semiconductor optical device using a very versatile metal can package. The fixed portion is preferably fixed to the trailing end surface of the stem by laser welding. If laser welding is used to fix between the fixed portion and the stem, the heating of the fixed portion and the stem can be sufficiently localized and can be heated for a short time of 1362739', so that the semiconductor optical component of the semiconductor optical device can be prevented. It is adversely affected by heat. In addition, since the fixing force by laser welding is strong, for example, in the case where the outer wire turns are not bent, the fixed portion is fixed on the trailing end surface of the stem, and then the outer wire is bent, in the case of The fixing of the shot welding is particularly effective. Preferably, the fixed portion of the outer lead has at least a plate-like form. For example, in the case where the outer lead wire is not bent, the fixed portion is fixed on the trailing end surface of the stem and then the outer lead is bent. If at least the fixed portion of the outer lead has a flat plate type, it can be easily performed. Bending of the outer wire. In addition, because the fixed portion of the outer wire is in surface contact with the end surface of the stem, the outer wire can be mounted on the trailing end surface of the stem in a very stable condition. Further, the portion which is bent at the shank side end portion of the outer wire, preferably the weak portion, is apt to form a curve. Similar to the above case, for example, in the case where the outer wire 尙 is not bent, the fixed portion is fixed on the trailing end surface of the stem, and then the outer wire is bent, in the case where the soft portion which is easily bent is formed on the outer wire shank When part of the side terminal portion, the bending of the outer wire can be easily and accurately performed. Further, 'the method of manufacturing a high-frequency signal transmission optical module according to the present invention' includes the steps of: preparing a semiconductor optical component in a metal can package; and causing a signal transmission pin to be self-formed in a metal can package core a semiconductor optical device in which a through hole protrudes; a linear outer wire having a fixed portion at one end thereof is disposed on both sides of the signal transmission pins, and the fixed portions are fixed to predetermined positions such that the fixed portions The surface 1362739 is in contact with the pre-twisted position of the tail surface of the stem; when the fixed portions are fixed to the trailing end surface of the stem, and the outer conductors are respectively bent, so that the signal transmission pins are The two sides extend along the signal transmission pins. According to the manufacturing method of the high-frequency signal transmission optical module, the wire extending along the individual wire pins on both sides of the individual wire pins can be mounted in the center of the semiconductor optical device by a very simple method. On the tail end surface of the column, there is a problem that the TEM wave transmission line is formed by the signal transmission pin, the stem and the individual outer wires. In other words, the high-frequency signal transmission optical module capable of transmitting high-frequency signals can be manufactured by using a semiconductor optical device using a metal can package of a very versatile use. The invention will be more fully understood from the following detailed description and appended claims. The scope of applicability of the present invention will be more apparent from the following detailed description. However, the detailed description and specific examples are intended to be understood by those skilled in the art and It is to be understood that the preferred embodiments of the invention are intended to be illustrative only. [Embodiment] Hereinafter, an embodiment of a high-frequency signal transmission optical module and a method of manufacturing the same according to the present invention will be described in detail with reference to Figs. 1 to 11. In the description of the drawings, the same components will be denoted by the same numerals and the description will not be repeated. As shown in Fig. 1, the high-frequency signal transmission optical module 1 has a semiconductor 1362739 optical device 2. For the semiconductor optical device 2, a 二-CAN type metal can package 5 composed of a stem 3 and a cap. 4 accommodates a high-speed, operational light diode (semiconductor optical element) 6' for The current signal of the photodiode 6 is converted into an amplifier 7 of a voltage signal, and capacitors 8 and 9. In the cap 4 of the metal can package 5, an opening 4a' is formed which can penetrate the light received by the photodiode 6, and in this opening 4a, a glass plate 11 is mounted. Here, in the opening 4a, a lens may be attached instead of the glass plate 11°. Further, in the stem 3 of the can metal package 5, four penetrating holes φ are formed, and then in each of the penetrating holes In 12, the wire pin 13 is disposed in a penetrating situation. The gap between the inner wall surface of the through hole 12 and the wire pin 13 is sealed by the glass seal body 14. Inside the metal can package 5, each of the lead pins 13 is connected to each member via a metal wire. Specifically, adjacent wire pins 1 3 a and 1 3 b are connected to the positive logic signal output pad and the negative logic signal output pad of amplifier 7, respectively. Further, the wire pin 13c is connected to the power supply port of the amplifier 7 via the capacitor 8, and the wire pin i3d is connected to the cathode pad of the photodiode 6 via the capacitor 9. φ Here, inside the metal can package 5, the GND pad of the amplifier 7 is connected to the stem 3 via a metal wire. Further, the ground pin 17 is soldered to the trailing end surface of the stem 3 by copper-zinc synthesis. As shown in Fig. 2, three types of flat outer leads 18 are mounted on the end surface 3a' of the stem 3 of the semiconductor optical device 2 of the above configuration. In detail, in the plane including the wire pins 13a and 13b, the outer wires 18 are disposed outside the wire pins 13a, outside the wire pins 13b, and at the wire pins 1362739 1 3a and the wire pins 13b. And extending substantially parallel to the wire pins 13a and 13b. For each of the outer wires 18, the fixing portion 19 is fixed to the trailing end surface 3a of the stem 3 by bending the side portion of the stem 3 of the outer wire 18. In the present embodiment, outside the three outer conductors 18, the outer conductors 18a and 18c are provided on both sides of the conductor pin 13a of the signal transmission pin, extending along the conductor pin 13a. Further, the outer leads 18b and 18c are on both sides of the lead pin 13b of the signal transmission pin, extending along the lead pin 13b. Here, since the ground pin 17 and the outer lead 18 have the same potential as the stem 3, these are all regarded as the GND terminal. However, the grounding pin 17 and the outer lead 18 are different, the grounding pin 17 is mounted when the material for the stem 3 is manufactured, and the outer lead 18 is close to the manufacturing high frequency signal transmitting optical module. Connected in the final stage of 1. In the high-frequency signal transmission optical module 1 of the above structure, the outer lead 18 can be easily mounted on the trailing end surface 3a of the stem 3 of the semiconductor optical device 2. For example, this makes it possible to fix the fixing portion 19 to the trailing end surface 3a of the stem 3 or to the outer lead 18 by using a solder, a conductive adhesive or the like in the case where the outer lead 18 has been bent. In the case of bending, the fixing portion 19 is first fixed to the trailing end surface 3a of the stem 3 by laser welding or the like, and then the outer lead 18 is bent. Thus, since both sides of the respective lead pins 13a and 13b of the signal transmission pins of the semiconductor optical device 2 extend along the respective lead pins 13a and 13b, the lead wires are mounted on the trailing end surface 3a of the stem 3 Therefore, when the outer lead is connected to the ground potential, the grounding region is continuously provided on both sides of the respective lead pins 13a and 13b by the stem 3 and the respective outer leads 18. Therefore, since the TEM wave transmission line is formed by the respective lead pins 1 3 a -10- 1362739 and Γ 3 b, the stem 3 and the respective outer leads 18, the semiconductor optical-mechanical device 2 can output a high-frequency signal. According to the above description, the high frequency signal transmission optical module can easily perform high frequency signal transmission by using the semiconductor optical device 2 of the metal can package-mounting body 5 which is applied in a very versatile manner. Next, an example of a manufacturing method of the local frequency signal transmission optical module 1 will be described, in which the fixed portion 19 of each outer lead 18 is fixed to the semiconductor optical device 2 by through-welding (laser welding) using YAG laser. The condition on the trailing end surface 3a of the stem 3. First, as shown in Fig. 3, the above-described semiconductor optical device 2 is prepared. Further, as shown in Fig. 4, a flat-plate lead frame 21 composed of the above-mentioned outer leads i8a, 18b and 18c is prepared side by side. One end portion of the lead frame 21 is a fixed portion 19' and the other end portion is a respective outer lead 18 which is connected by a rectangular connecting portion 22 which is integrally formed. In each of the outer leads 18, by forming a notch portion 23 on both edge portions thereof, a portion to be bent when being placed on the trailing end surface 3a of the stem 3 is formed into a weak portion 24 which is easily bent (relatively In the weak portion 24, one of the portions on one end side becomes a fixed portion 19). Further, in the connecting portion 22, a pair of positioning holes 25 are also formed. Here, the 'wire frame 21' is made of a metal material such as k〇var, and a plating treatment such as an electric metal or the like is applied to the surface thereof. In addition, the lead frame 21 is provided with a thickness of 〇.2 mm, so that the through-welding can be performed easily and accurately by the YAG laser. After the preparation of the semiconductor optical device 2 and the lead frame 21, as shown in Fig. 5, these are mounted to the fixing jig 31. In other words, the metal can package 5 of the semiconductor optical device 2 is placed on the placement stand 33 on the front side of the front side 32 of the fixing jig 31, and the support seat 34 on the front side of the placement seat 33 is provided. In the V-shaped groove, the wire pins 13c and 13d of the optical device 2 are disposed. Next, a pair of positioning pins 35 are stood on the front surface of the back plate 32, and penetrate the fixed hole 25 of the wire to make the wire frame. Each of the fixing portions 19 of the 21 is in contact with the trailing end surface 3a of the stem 3 of the optical device 2. In the fixing jig 31, the positioning relationship between the placement seat 33, the support base 34, and the fixed frame 5 is explained as follows. In other words, as in the sixth, when the semiconductor optical device 2 and the lead frame 21 are mounted on the solid 31, the relationship is a straight line S connecting the centers of the portions 24 of the outer lead wires 18 of the lead frame 21 (i.e., the straight line S connects the outer leads) The central portion of the portion 8 8 is in contact with the ground pin 17 of each of the leads 13a and 13b of the signal transmission pin. After the semiconductor optical device 2 and the lead frame 21 are mounted on the solid 31, as shown in Fig. 7, by moving the light-emitting portion 30 from the horizontal direction, the lightning is sequentially emitted toward the respective fixed portions 19, and the fixed portions are respectively fixed. 19 is welded through the end surface of the stem 3 to position it. At this time, since each of the outer wires 18 has a flat plate-like form, the fixed portion 19 of the outer wire 18 can surfacely contact the tail 3 a of the stem 3, and therefore, under stable conditions, the outer wire 18 can be sure of the column 3 On the end surface 3a. In addition, by applying Yag through the welding between the fixed portion 19 and the stem 3, since the heating of the minute 19 and the stem 3 can be sufficiently local and short enough, the side is provided in a semiconductor manner. Frame 21 The fixed position of the fixture shown in the semiconductor pin diagram shows the position of the laser beam L 3a. The surface of each end is mounted between the fixed parts of the laser. -12- 1362739, so it can be prevented. The damage effect of the heating affects the components of the semiconductor optical device 2. After that, the semiconductor optical device 2 and the lead frame 21 are unwound from the fixing jig 31, as shown in Fig. 8, and at the same time, the outer leads 18 of the lead frame 21 are bent to be connected to the respective wires of the signal transmitting pins. On both sides of the legs 13a and 13b, extending along the respective wire pins 13a and 13b. At this time, since each of the outer leads 18 has a flat plate type 'and, since the weak portion 24 has been formed on each of the outer wires 18, the bending of the outer wires 18 of the lead frame 21 can be easily and accurately performed. Further, when the bending of the outer wires 18 of the roving frame 2 1 is performed as it is, since the fixing force by the through welding using the YAG laser is strong, it is applied to the fixed portion 19 and the stem 3 The fixed through-welding between the two is particularly effective. Finally, the connecting portion 2 2 side of the lead frame 2 1 is cut by the cutter so that the outer lead wires 18 have a predetermined length, so that the high-frequency signal transmission optical module 1 is completed. According to the manufacturing method of the above-mentioned local frequency signal transmission optical module 1, by a very simple method, on both sides of the respective lead pins 13a and 1 3b of the signal transmission pin, 'between the respective conductor pins The wires 18a' 18b and 18c extending beyond the 3 a and i 3 b can be mounted on the trailing end surface 3a of the stem 3 of the semiconductor optical device 2, so that the wires can be connected by the respective legs i3a and 13b, the stem 3. With each outer lead 丨 8, a teM wave transmission line is formed. Therefore, the high-frequency signal transmission optical module 1 capable of realizing high-frequency signal transmission can be manufactured by using the semiconductor optical device 2 of the metal can package 5 which is applied in a very versatile manner. -13- 1362739 Next, a circuit board in which the high-frequency signal transmission optical module 1 is placed will be described as an example of use of the high-frequency signal transmission optical module 1. As shown in Figs. 9 to 11 , the high-frequency signal transmission optical module 1 is mounted on the circuit board 41, and the circuit board 41 is inserted in the wire pins 13a and 13b and the wire pins 13c and 13d. between. On the surface 41a on the side of the conductor pins 13a, 13b of the circuit board 41, the signal transmission line 42a is brought into contact with the side of the conductor pin 3a of the signal transmission pin, and the signal transmission line 42a is connected to the signal transmission. The side of the wire lead 13b of the foot comes into contact. Each of the signal transmission wires 42a and 42b extends toward the signal processing circuit placed on the circuit board 41, and is connected to the signal processing circuit. On the surface 41a of the circuit board 41, outside the signal transmission wire 42a, the ground wire 43a comes into contact with the side surface of the wire 18 other than the high-frequency signal transmission optical module 1. Similarly, outside the signal transmission wire 42b, the ground wire 4 3 b comes into contact with the side surface of the outer wire 18b. Each of the grounding conductors 4 3 a and 4 3 b is formed along the respective signal transmission wires 4 2 a and 4 2 b at a predetermined distance from each of the signal transmission wires 42a and 42b, and is connected to the ground potential. The surface 41a of the board 41 is between the signal transmission line 42a and the signal transmission line 42b, and the ground line 44 comes into contact with the side surface of the conductor 18c outside the high-frequency signal transmission optical module 1. This grounding conductor 44 is formed along the respective signal transmission wires 42a and 42b at a predetermined distance from each of the signal transmission wires 42a and 42b, and is connected to the ground potential. Here, the respective wires 42a, 42b, 43a, 43b, and 44 are formed by patterning a conductive material such as copper on the base material of the circuit board 41 to form a pattern of -14 to 1362739. Further, the respective lead pins 13a and 13b and the respective signal transmission wires 42a and 42b are surely connected by a solder, a conductive adhesive or the like. Similarly, the outer leads 18a, 18b and 18c and the respective ground wires 43a, 43b and 44 are also reliably connected by solder, conductive adhesive or the like. In the above-described circuit board 41 constructed, the signal transmission line is formed by the conductor pin 13a which is the signal transmission pin of the high-frequency signal transmission optical module 1, and the signal transmission line 42a. On both sides of the signal transmission line, along the area where the signal transmission line is connected, the stem 3, the outer conductors 18 a and 18 c, and the ground conductors 43a and 44 are continuously provided. This structure is similar to the signal pin structure formed by the signal pin 13b of the signal transmission pin of the high frequency signal transmission optical module and the signal transmission line 42b. Therefore, since the TE chopping transmission line is formed, the amplifier 7 signal high frequency signal inside the metal can package 5 can be self-provided. Here, even when a gap is formed between the trailing end surface 3a of the stem 3 of the high-frequency signal transmission optical module 1 and the edge portion of the circuit board 41, since the above-described TEM wave transmission line is formed, it can be high. Frequency signal transmission. However, in order to reduce the impedance difference between the high-frequency signal transmission optical module 1 side and the circuit board 4 1 side, it is preferable to minimize the gap between the trailing end surface 3 a of the stem 3 and the edge portion of the circuit board 41 as much as possible. . Further, in the gap, a dielectric material such as a resin is provided to cover the respective lead pins 13a and 13b and the outer leads 18' to reduce the influence of impedance mismatching. The invention is not limited to the embodiments described above. For example, although the above embodiment has been used for the case where the amplifier 7 housed in the canister package 5 has two-15-1362739 differential signal outputs, the amplifier 7 can have one signal output (in other words, single-ended type). . In this case, since the lead pins 13 serving as the signal transmitting pins are separately provided, providing the two outer leads 18 is sufficient to sandwich the lead pins 13. The above embodiment has been used in the case of the semiconductor optical device 2 having the photodiode 6 as a light receiving element of the semiconductor optical element, and the amplifier 7 connected to the photodiode 6, but for The semiconductor optical component of the semiconductor optical device 2 can provide a photodiode which is a photodetector or a light emitter such as a laser diode. In the case of the light emitter, the wire pin 13 which is a signal transmission pin has a function as a signal input pin. Further, although the above embodiment has been applied to the case where the entire outer lead 18 has a flat plate-like form, as long as at least the fixed portion 19 of the outer lead 18 has a flat plate type, for example, the outer lead 18 is not bent. In the case where the fixing portion 19 is fixed on the trailing end surface 3a of the stem 3 and then the outer lead 18 is bent, the bending of the outer lead 18 can be easily performed. Further, since the fixed portion 19 of the outer lead 18 is to be made in contact with the apex of the caudal end surface 3a of the stem 3, the outer lead 18 can be accurately mounted on the trailing end surface of the stem 3 in a stable situation. 3 a. Furthermore, in the above embodiment, for the example of the manufacturing method of the high-frequency signal transmission optical module 1, the fixed portion 19 of each of the outer leads 18 has been described, and is fixed to the center of the semiconductor optical device 2 by laser welding. In the case of the trailing end surface 3a of the column 3, the fixing portion 19 can be fixed to the trailing end surface 3a of the stem 3 by using a weld, a conductive adhesive or the like. BRIEF DESCRIPTION OF THE DRAWINGS [0007] The detailed description of the present invention'''''''''' Such changes will not depart from the spirit and scope of the invention, and all such modifications as will be apparent to those skilled in the art are included within the scope of the appended claims. Industrial Applicability According to the present invention, high-frequency signal transmission can be easily performed by using a semiconductor optical device using a metal can package of a very versatile use. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view of an embodiment of a high frequency signal transmission optical module according to the present invention; FIG. 2 is a high frequency signal shown in FIG. 1 viewed from a side of a wire pin. Perspective view when transmitting the optical module; Fig. 3 is a perspective view of the semiconductor optical device viewed from the side of the wire pin; Fig. 4 is a plan view of the lead frame; Fig. 5 is a view of the semiconductor optical device and the lead frame have been mounted A perspective view of the case where the fixture is fixed; the second diagram is a positional relationship between the semiconductor optical device and the lead frame, and Fig. 7 is a perspective view of the core of the semiconductor optical device fixed by the laser welding by the laser welding Figure 8 is a perspective view showing a state in which the lead frame fixed to the stem of the semiconductor optical device is bent; .. -17- 1362739 Fig. 9 is a high frequency signal transmission optical module which will be shown in Fig. 1. A front view of the circuit board placed thereon; Fig. 10 is a left side view of the high frequency signal transmission optical module and circuit board shown in Fig. 9; and Fig. 11 is a high frequency signal transmission shown in Fig. 9. Lower view of optical modules and boards Figure. [Main component symbol description] 1 Local frequency signal transmission optical module 2 Semiconductor optical device 3 Heart column 5 Metal can package 6 Photodiode (semiconductor optical element) 12 Through hole 1 3 a, 1 3 b Wire pin ( Signal transmission pin) 1 8,1 8 a,1 8 b,1 8 c outer conductor