1362698 九、發明說明： 〔發明所屬技術領域〕 [ 0001〕 本發明係有關於晶圓研磨裝置、晶圓研磨系統及晶面研 磨方法者’特別是有關使用複數個平台並以1或2階段以上 執行研磨加工的晶圓研磨裝置、晶圓研磨系統及晶園研磨方 法者。 〔先前技術〕 〔 0002〕 以往’此種晶面研磨裝置（CMP裝置）1係如圊9所示， 具備有.可旋轉驅動的平台2;被黏貼在該平台2上面的研 磨墊3;保持晶圓之可昇降的晶圓保持頭4 ;及對前述研磨 墊3上面供給研磨劑的供給噴嘴（未圖示），且前述平台2 建構成藉馬達5的驅動並透過旋轉軸6而可旋轉。 〔 0003〕 在晶圓研磨之際，將晶圓以既定壓力按壓於研磨墊3上 面，將該研磨墊3及晶圓一邊旋轉一邊供給研磨劑於研磨墊 3上面以進行研磨。 (0004) 在對複數個晶圓進行CMP處理的情況，從提升吞吐量的 觀點，雖然有將複數個晶圓g己置在同一平台上並對複數個晶圓 同時進行CMP處理的方法，但是針對複數個晶圓，無法全部 破保均-的高加工品質’所以採用一個平台對一片晶圓進行 CMP處理之方法。 5 1362698 4. 〔 0005〕 又’在1個平台上一次載置j片晶圓的！階段研磨亦 即，在1個工程進行研磨的情況，或是2階段研磨亦即途 中變吏研磨條件（研磨劑之種類、研磨壓力、研磨速度等等） 以2個工程作研磨的情況，在對i個平台進行晶圓供給排 出之際，由於會產生等待時間故吞吐量降低。 〔 0006〕 _ • 於是，為使吞吐量提升，以往提案有各種的研磨方法。 例如有把具備1個平台及可定位於！個移送裝置之用以保持 1個晶圓保持頭的定位手段而成的單元（包含移送裝置共用 化者）作^個組合者（例如，參照專利文獻2)。又，亦有具 備η個平台、及可定位於i個移送裝置之用以定位（η+ι) 個晶ai保持賴定位手段者（例如，參照專利文獻3、4)。 〔 0007〕 還有，組合2個具備有2個平台、及可定位於1個移送 _ 裝置之用以保持晶®保持頭的定位手段而成的草並共用！ 個平台者（例如，參照專利文獻5 ' 6)。又，亦有具備2個平 台、及2個可定位於移送裝置之用以保持晶圓保持頭的定位 手段，並建構成能將各個定位手段控制成相互獨立者（例 如’參照專利文獻7)» 〔專利文獻1〕日本國專利特開平u — 2〇4468號公報 [專利文獻2〕日本國專利特開平1〇_2〇2515號公報 〔專利文獻3〕曰本國專利特開平〇9_ 17442〇號公報 C專利文軚4〕日本國專利特開2〇〇5_ 131772號公報 C專利文獻5〕曰本國專利特開2〇〇3_ 332282號公報 6 1362698 〔專利文獻6〕日本國專利特開2〇〇〇 —託以犯號公報 〔專利文獻7〕日本國專利特開2〇〇〇_ m628號公報 〔發明内容〕 〔發明所欲解決之課題〕 〔 0008〕 專利文獻1或2所記裁之先前技術，因為難以在執行2 • 階段研磨的情況進行連續的研磨加工，故處理效率降低。 ( 0009〕 . 又’專利文獻3或4所記載之先前技術，在執行2階段 研磨的情況，雖能在未進行換拿晶圓之下連續地進行CMp處 理，但在執行丨階段研磨的情況，由於在複數個平台間進行 CMP處理，所以僅晶圓於複數個平台間移動的期間，生產性 會降低》 〔0010〕 再者，專利文獻5或6所記載之先前技術，在執行i階 k研磨的情況，因為存在有未被使用的平台，所以裝置尺寸 變大。又，專利文獻7所記載之先前技術，能以1階段研磨 及2階段研磨雙方來實現高效率的研磨加工，但有必要將平 台與移送裝置配置在®周上，且為確保定位手段之剛性而使 展置的尺寸變大。 〔0011〕 在先前技術令，一般是使用不同種類的研磨劑並依該研 磨劑的種類而設置複數個平台，並於各平台上依序執行多階 段研磨的方法，或是採用按複數個平台而設置晶圓保持頭的 7 1362698 方法等等，但都是一長一短，而難以在1階段研磨與多階段 研磨雙方實現高的呑吐量，又，平台與晶圊保持頭的數量增 加’具有所謂裝置整體之尺寸變大的問題。 〔0012〕 於是衍生出用以解決在使用1個平台進行1階段研磨的 情況，或是依序使用複數個平台進行多.階段研磨的情況，能 以高的吞吐量研磨晶圓，且未增大裝置整體而縮小占有空間 之技術課題，本發明乃以解決此課題為目的。 〔解決課題之手段〕 〔0013〕 本發明乃為達成上述目的而提案者，申請專利範圍第^ 項所記載之發明係提供一種將晶圓保持頭所保持的晶圓按 壓於平台上的研磨墊並進行研磨之晶面研磨裝置，其具備 有：相互具有間隔而併設之第丨平台及第2平台；各自設置 在第1平台、第2平台的上方之可昇降的第！晶圓保持頭、 第2晶圓保持頭；配設在第丨平台與第2平台之間且載置 有研磨前的晶圓與研磨後的晶圓之晶圓移載裝 圓保持頭移動並停止於第1平台與晶圓移載裝置之雙方的^ 位處所之第丨移動手段；使第2晶圓保持頭移動並停止於第 2乎台與晶®移載裝置之雙方的定位處所之第2移動手段； 及支撐第1移動手段與第2移動手段，同時以前述晶圓移載 裝置為中心旋轉並使第！晶圓保持頭、第2晶圓保持頭分別 移動並停止於第2平台、第1平台的定位處所之第3移動手 段，且建構成可使分別藉第〗平台或第2平台所研磨的晶圓 8 1362698 旋轉移動於第2平台或第1平台的定位處所以進行研磨。 〔0014〕 依據此構成，在1階段研磨的情況，第1平台與第2平 合係設定相同研磨條件作研磨加工。首先，以第】移動手段 使第1晶圊保持頭移動到晶圓移載裝置的定位處所而保持前 述晶圓，使該晶圓保持頭移動至第1平台的定位處所並開始 研磨加工。而稍遲若干將第2個晶圓載放於晶圓移載裝置之 後，與前述同樣地，將該晶圓以第2晶圓保持頭保持，使之 移動至第2平台的定位處所並開始研磨加工。 〔0015〕 如此，使2個晶面依序獨立地分別移動至第丨平台第 2平台而作研磨，使研磨後的晶圓依序移動至晶圓移載裝置 上的晶圓搬出部並排出，之後，把被搬入晶圓移載裝置上的 第3個晶圓、第4個晶圓以第1晶圓保持頭、第2晶圓保持 頭分別保持，再以前述同樣的程序反覆1階段研磨❶ 〔0016〕 又，在2階段研磨的情況，第1平台與第 同研磨條件作研房一先，在第】個晶:被== 移載裝置的晶’人位置之後’第t晶面保持頭藉第i移動 手段而移動至晶圓移載裝置的晶圓搬入位置而 圓’接著，第1晶圓保持頭移動至第！平台的研磨位置而開 始研磨。 〔0017〕 另-方面，第2晶圓保持頭藉第2移動手段而移動至晶面 移載裴置上的晶圓供給部而保持第2個晶園。接著，在第i 9 1362698 個晶圓之研磨結束後，第1晶圓保持頭係藉第3移動手段而 移動至第2平台的研磨位置且旋轉移動，且，第2個晶圓係 藉第2移動手段而移動至第丨平台的研磨位置並開始研磨。 〔0018〕 在第1個晶圓之研磨結東後，第丨晶圓保持頭移動至晶 圓移載裝置使第1個晶圓排出之後，轉而保持第3個晶圓。 又，在第2個晶圓之研磨結束後，第2晶圓保持頭係藉第3 移動手段而移動至第2平台的研磨位置而開始研磨。在此之 後，遘過反復上述的工程，利用第】平台與第2平台之2階 段研磨係被依序進行。 〔0019〕 申請專利範圍第2項所記載之發明係提供一種將晶圓保 持頭所保持的晶圓按壓於平台上的研磨势並進行研磨的晶 圓研磨裝置，其特徵為具備：相互具有間隔而併設之第1平 台及第2平台；各自設置在第丨平台 '第2平台的上方之可 昇降的第1晶圓保持頭、第2晶圓保持頭；配設在第丨平台 與第2平台之間，且載置有研磨前的晶圓與研磨後的晶圓之 晶圓移載裝置；使第1晶圓保持頭移動並停止於第1平台與 晶圓移載裝置之雙方的定位處所之第丨移動手段；使第2晶 圓保持頭移動並停止於第2平台與晶圓移載裝置之雙方的定 位處所之第2移動手段；及支撐第1移動手段與第2移動手 段’同時以前述晶圓移載裝置為中心旋轉並使第1晶圓保持 頭、第2晶圓保持頭分別移動並停止於第2平台、第1平台 的疋位處所之第3移動手段，且建構成可使分別藉第丨平台 或第2平台所研磨的晶圓旋轉移動於第2平台或第1平台的 10 1362698 定位處所以進行研磨，而且，在第丨平台與晶圓移載裝置之 間，及第2平台與晶圓移載裝置之間各自設置液體飛散防止 用的區隔壁，同時在該區隔壁形成讓上述第丨晶圊保持頭及 第2晶圓保持頭通過的通路，前述區隔壁係可與上述第3移 動手段一體旋轉地設置。 〔 0020〕 依據此構成，具有與申請專利範圍第1項同樣的作用， 而且，就算將第1平台及第2平台相互近接地作配置，由於 各平台與晶圓移載裝置之間設置有區隔壁，所以在研磨加工 中，阻止被供給到2個平台其中_方的研磨劑等飛散至他方 的平台側。又，在區隔壁形成有容許各晶圓保持頭移動的通 路，且該區隔壁係安裝成可與第3移動手段一體旋轉，所以 在2個平台與晶圓移載裝置之間，前述晶圓保持頭係在未與 區隔壁干涉之下移動。 〔0021〕 申請專利範圍第3項所記載之發明係提供如申請專利範 圍第1項或第2項之晶圓研磨裝置’其中上述晶圓移載裝置 具備有搬入未研磨的晶圓之晶圓搬入手段、及搬出已研磨的 晶圓之晶圓搬出手段，且建構成該晶圓搬出手段與晶圓搬入 手段可獨立地移動於和前述第3移動手段的旋轉中心位置對 應的位置。 〔 0022〕 依據此構成’晶圓搬入手段與晶圓搬出手段係可交替且 相互獨立地移動於與第3移動手段的旋轉中心位置對應的位 置6因此’未研磨的晶圓係在藉晶圓搬入手段設定於晶圓移 1362698 圓研磨裝置其t 一方以2階段研磨對晶圓進行CMP處理之 後，將該晶圓移送至他方的晶圓研磨裝置能再以丨階段研磨 或2階段研磨進行CMP處理。因此，整體而言係對該晶圓實 施3階段研磨或4階段研磨。 〔 0027〕 申請專利範圍第6項所記載之發明係提供一種利用併設 有2個晶圓研磨裝置之申請專利範圍第5項的晶圓研磨系統 研磨晶圓之方法’其中包含：將晶圓搬運至2個晶圓研磨裝 置之一方而實施丨階段研磨或2階段研磨的工程；藉移送裝 置將既實施過該1階段研磨或2階段研磨的晶圓移送到他方 的晶圓研磨裝置之工程；及藉該他方的晶圓研磨裝置對前述 晶圓再實施1階段研磨或2階段研磨之工程，且整艘而言對 前述晶圓實施3階段研磨或4階段研磨》 〔 0028〕 依據此方法，首先，在將晶圓搬運至一方的晶圓研磨裝 置並實施1階段研磨或2階段研磨之後，利用移送裝置將該 晶圓移送到他方的晶圓研磨裝置。接著，對前述晶圓再實施 】階段研磨或2階段研磨。依此，整體而言對前述晶圓實施 3階段研磨或4階段研磨β 〔發明效果〕 〔 0029〕 申請專利範圍第丨項所記載之發明，係於使用 1個平台 在2處所交互進行1階段研磨的情況、及依序使用2個平台 進行2階段研磨的情況雙方，在未產生等待時間之下連續地 13 1362698 進行研磨加工’因而能獲得高的吞吐量。又，在1階段研磨 及2階段研磨雙方，因為是使用近接併設的2個平台，所以 不僅是生產性提升’也實現所占空間小的緊密構成。 f 0030) 再者’由於I階段研磨或2階段研磨之任一情況亦未因 各研磨加工.之處理時間的比例而使連續研磨加工受到影 響’所以可實施生產效率好的1階段研磨或2階段研磨β特 別是於2階段研磨中、在第1研磨工程和第2研磨工程結束 後，可直接順暢地移行至下個研磨動作，在沒有第丨研磨工 程與第2研磨工程其中一方會因他方的研磨加工狀況而待機 的情形下，可良好地防止因待機時間所引發之晶圊加工面的 腐蚀。 〔 0031〕 申請專利範圍第2項所記載之發明，由於係利用區隔壁 來阻止從2個平台其中一方朝向他方飛散的研磨劑，所以除 了申請專利範圍第1項所記載之發明的效果以外，還可防止 因研磨劑之飛散所造成的環境污染於未然，同時亦無種類相 異的研磨劑相互混雜之虞，晶圓的加工品質提升。又，晶圓 保持頭係未與區隔壁干涉之下，可圓滑地移動於前述平台.與 晶圓移載裝置之間。 〔 0032〕 申請專利範圍第3項所記載之發明，由於晶圓搬入手段 與晶面搬出手段可移動到與第3移動手段的旋轉中心位置對 應之位置，所以除了申請專利範圍第丨項或第2項所記載之 發明的效果以外，可利用晶圆搬入手段將未研磨的晶面正確 14 1362698 地載置於晶圓移載裝置上的晶圓供給位置，同時可利用旁圓 搬出手段將載置於晶圓移載裝置上的晶圓排出位置之已研 磨的晶圓確實地搬出。由於晶圓移載裝置是位在第3移動手 段的旋轉中心，所以就算是第1晶圓保持頭、或第2晶面保 持頭在與晶圓移載裝置執行晶圓之供給或排出之際，也能使 用第3移動手段將他方的晶圓保持頭自由地定位於2個平 台。 〔 0033〕 申請專利範®第4項所記載之發明，由於在第3移動手 I又的狄轉中心位置設置有研磨頭洗淨裝置，所以除了申請專 利範圍第1項、第2項或第3項所記載之發明的效果以外， 構造緊密，且光是使晶圓保持頭移動至旋轉中心位置就能容 易且迅速地洗淨。由於研磨頭洗淨裝置位在第3移動手段的 旋轉中心，所以就算在第1晶圓保持頭、或第2晶圓保持頭 利用研磨頭洗浄裝置執行研磨頭洗淨之際，也能使用第3移 動手段將他方的晶圓保持頭自由地定位於2個平台。 [ 0034〕 申請專利範圍第5項所記載之發明，因為是藉由將晶圓 依序移送到2個以上的晶圓研磨裝置進行研磨加工而可進行 所希望之多階段（3階段以上）研磨，所以能容易獲得高加 工品質的晶圓。 〔 0035〕 申請專利範園第6項所記載之發明，因為是藉由將晶圓 依序移送到2個晶圓研磨裝置並以複數工程作研磨加工而可 進打3階段研磨或4階段研磨，故能一邊維持生產性之提升 15 1362698 一邊可容易地製造較以往還高研磨品質的晶圓β 〔實施方式〕 〔本發明最佳實施形態〕 C 0036 ) 本發明為達成所謂在使用1個平台進行1階段研磨的情 況、或是在依序使用複數個平台進行多階段研磨的情況，能 以高的吞吐量研磨加工晶圓，且裝置整體未大型化使占有空 間縮小化之目的，係利用如下之構成來實現，亦即，一種.晶 圓研磨裝置，係將晶圓保持頭所保持的晶圓按壓於平台上的 研磨墊並進行研磨之晶圓研磨裝置，其中具備：相互具有間 隔而併設之第1平台及第2平台；各自設置在第1平台、第 2平台的上方之可昇降的第1晶圓保持頭、第2晶圓保持頭； 配設在第I平台與第2乎台之間，且載置有研磨前的晶圓與 研磨後的晶圓之晶圓移載裝置；使第丨晶圊保持頭移動並停 止於第1平台與晶圓移載裝置之雙方的定位處所之第1移動 手段；使第2晶圓保持頭移動並停止於第2平台與晶圓移載 裝置之雙方的定位處所之第2移動手段；及支撐第1移動手 段與第2移動手段，同時以前述晶面移載裝置為令心旋轉並 使第I晶圓保持頭、第2晶圓保持頭分別移動並停止於第2 平台、第1平台的定位處所之第3移動手段，且建構成可使 分別藉第1平台或第2平台所研磨的晶圓旋轉移動於第2平 台或第1平台的定位處所以進行研磨》 16 1362698 〔實施例〕 〔 0037〕 以下，依據圖1至圓8來說明本發明的一較佳實施例。 本實施例為，具備分別設置於第1平台及第2平台之上方的 第1晶®保持頭及第2晶面保持頭，且於2個平台之間配設 載置晶圓的晶圓移載裝置，且使第1晶圓保持頭與第2晶圓 保持頭藉由第1移動手段與第2移動手段，分別移動至2個 φ 平台與晶圓移載裝置雙方的定位處所，藉此而能以高的吞吐 量實施1階段研磨。 ( 0038) 再者，透過以支撐2個移動手段的旋轉移動手段（第3 移動手段）使2個晶溷保持頭分別旋轉移動到相反側的平 台’藉此能以高的吞吐量實施2階段研磨。又，因為可將2 個平台及移動手段緊密地配置，故可實現未加大裝置整體之 尺寸而缩小占有面積。 〔 0039〕 圓1係顯示本實施例所涉及的CMP系統11之整艏搆成 的上視圓。如同圖所示’ CMP系統11具備：晶圓研磨部12 ; 設置於該晶面研磨部】2之一側上的晶圓洗淨部】3、以及鸪 置於該晶圓洗淨部13之一側上的晶圓收納部14，於晶圓洗 浄部13、晶圓收納部14 ’各自設置洗淨裝置15、晶圓收納 用匣16。 [ 0040〕 被搬入晶圓研磨部12的晶®，係被以1階段研磨或2 階段研磨進行CMP處理，已研磨的晶圓係轉移到搬運用機械 17 1362698 手臂17而搬運至晶ffl洗淨部丨3 ,利用洗淨裴置15作洗淨。 接著，洗淨後的晶圓轉移到搬運用機械手臂丨8而搬運至晶 圓收納部14並收納於晶圓收納用昆^ 。 ( 0041 ) 其次，茲詳述前述晶圓研磨部12所設置的CMP裝置1〇 之構成。在晶圓研磨部12,能以馬達（未圖示）旋轉驅動的 第1平台21與第2平台22係具有既定間隔而併設著，在第 Φ 1平台21、第2平台22的上面各自黏貼有第1研磨墊24、 第2研磨墊25。又，第1平台21與第2平台22之間配設晶 圓移載裝置23,該晶圓移載裝置23載置研磨前之晶面與研 磨後之晶面。 〔 0042〕 又’在第1研磨墊24、第2研磨墊25的上方，設置有 保持晶圓並對各研磨墊24、25分別以既定壓力按壓之可昇 降且可旋轉驅動的第1晶圓保持頭26、第2晶圓保持頭27， 以及對各研磨墊24、25上分別供給研磨劑的供給喷嘴（未 •圖示）。 〔 0043〕 因此，將各個晶圓保持頭26、27所保持的晶面按壓於各 研磨塾24、25上面，使該研磨墊24、25及晶圓一邊旋轉一 邊對研磨塾24、25上供給研磨劑，藉此，晶圓下面係被研磨。 C 0044 ] 如圖2所示，在晶圓移載裝置23分別設置有晶圓供給 手段28與晶圓排出手段29,該晶圓供給手段28可移動於晶 «搬入位置3丨，且在晶圓撒入位置31自前述搬運用機械手 18 1362698 臂接取研磨前的晶圓而朝晶圓保持頭26、27供給，又，晶 圓排出手段29係可朝晶圓搬出位置32移動，把從晶圓保持 頭26、27接取的已處理之晶圊轉移到前述搬運用機械手臂 17 〇 1 0045〕 再者’晶圓移載裝置23及前述平台21、22的上方設置 有第1移動手段33、第2移動手段34»作為第1移動手段 33、第2移動手段34的驅動方式，可採用滾珠螺桿驅動方 式或汽缸駆動方式等》又，在第1移動手段33、第2移動手 段34上，第1晶圓保持頭26、第2晶圓保持頭27係可移動 地被支撐著。 〔 0046〕 因此’透過利用第1移動手段33使第！晶圓保持頭26 在晶圓登一栽裝置23與第1平台21之間往復動作，而形成第 1晶圓保持頭26被移動於晶圓移載裝置23及第1平台21的 研磨位置並被定位❶亦即，建構成第！晶圓保持頭26藉由第 1移動手段33而移動並停止於第丨平台21與晶圊移載裝置 23之雙方的定位處所（研磨位置、晶圓轉移位置）。 〔 0047〕 同樣地’透過利用第2移動手段34使第2晶圓保持頭 27在晶圓移載裝置23與第2平台22之間往復動作，而形成 第2晶圓保持頭27被移動於晶圃移載裝置23及第2平台22 的研磨位置並被定位》亦即，建構成透過第2移動手段34 使第2晶圓保持頭27移動並停止於第2平台22與晶圓移載 裝置23雙方之定位處所（研磨位置、晶圓轉移位置）。 19 〔 0048〕 1362698 而且’晶圊移載裝置23的上方附設有屬第3移動手段 的旋轉移動手段35»旋轉移動手段35係支撐第1移動手段 33與第2移動手段34,同時以晶圓移載裝置23為中心旋轉， 而使第1晶圓保持頭26、第2晶圓保持頭27分別移動並停 止於第2平台22、第1平台21的定位處所（研磨位置）》 〔 0049〕 • 因此’藉泫旋轉移動手段35，第1晶圊保持頭26係連 同第1移動手段33 —起繞晶圓移載裝置23水平旋轉180 度，而旋轉移動至第丨平台21相反側的第2平台22之研磨 位置並停止。同樣地，藉旋轉移動手段35，第2晶圓保持頭 27係連同第2移動手段34—起繞晶圊移載裝置23水平旋轉 180度’而旋轉移動至第2平台22相反側的第1平台21之 研磨位置並停止β此外，建構成在與旋轉移動手段35的旋 轉t心位置對應的位置，前述的晶圓搬出手段31與晶圓搬 入手段32可相互獨立地交替移動》 • 〔 0050〕 旋轉移動手段35係如圖3所示，在支撲著第1移動手 段33及第2移動手段34的構件之外周部具有旋轉支撐部（未 圖示），且被馬達（未圖示）旋轉驅動》第1晶圓保持頭26 與第2晶圓保持頭27係於旋轉移動手段35的外周部相互對 峙地配置著。 〔 0051〕 因此’旋轉移動手段35係透過馬達駆動而僅往復旋動 180度，藉此，第1晶圓保持頭26與第2晶圓保持頭27係 20 1362698 在第1平台21與第2平台22之間旋轉移動》 〔 0052〕 本實施例中’係在第1平台21與晶圓移載裝置23之間， 及第2平台22與晶圓移載裝置23之間各自設置液體飛散防 止用的區隔壁38 ’使得被供給到旋轉中的第1平台21或第 2平台22的上面之研磨劑等液體不會飛散到與第1平台21 或第2平台22對向配置之第2平台22或第1平台21側。 〔 0053〕 如明3所示，區隔壁38係由上壁部39和下壁部（補助 壁部）40所構成ρ上壁部39係安裝成可與旋轉移動手段35 一體旋轉，上壁部39的上視圖形狀乃如闽4所示，係由配 置在第1平台21與第2平台22間的一對鉛直面部41、以及 從該鉛直面部41的兩端對應第1平台21、第2平台22的外 周形狀而形成之圓弧面部42、43所構成。 〔 0054〕 又，在一對鉛直面部41的内側，形成有在第1平台21 與第2平台22之間進行連絡的通路該通路44容許第1 晶圓保持頭26、第2晶園保持頭27之移動。因此，藉由通 路44而形成第1晶圓保持頭26、第2晶面保持頭27可在不 與區隔壁38干涉之下作移動。 〔 0055〕 下壁部40,係由被固定在晶圓移載裝置23與第1平台 21、第2平台22之間的圓弧面部45、以及用以自該圓弧面 部45的上端覆蓋第1平台2卜第2平台22的上面所連設的 水平面部46所構成（圖3及圏5)» 21 1362698 〔 0056〕 透過在前述平台21、22與晶圓移載裝置23之間設置區 隔壁38，以建構成在晶圓研磨當中，被供給到第1平台21 或第2平台22上面的研磨劑等不會飛散到其相反側的第2 平台22、第1平台21之上面》而且因為先前技術中已揭示 有利用純水等將飛散到壁面的研磨劑進行洗淨的技術（未圓 示），所以在透過旋轉移動手段35使上壁部39進行移動之 φ 前’可對朝向壁面飛散的研磨劑進行洗淨，所以就算是上壁 部39旋轉，也不會發生把各自在第1平台21、第2平台22 使用過的研磨劑帶入第2平台22、第1平台21的情形。 ( 0057 ) 其次，要針對本實施例的作用進行說明，構成CMP系統 11之各動作部係透過未圖示之控制裝置而按既定的動作程 式來統籌進行動作控制》圖6 (a)〜圖6 (e)係顯示藉1階 段研磨對晶圓進行CMP處理時的動作工程。此外，在說明方 便上，省略同圓t移動手段33、34、35等之圖示》 • 〔 0058〕 在此’為了在第1平台21與第2平台22分別對晶圓實 施1階段研磨，在第1平台21與第2平台22分別所設定的 研磨劑等之研磨條件乃彼此相同。 〔 0059〕 首先，於圖3所示的晶圓移載裝置23之晶圓供給部28 載置晶圓之後，第1晶圓保持頭26係藉由第1移動手段33 而移動至晶圓移載裝置23的接取位置（圖6 (a))〇其次， 第1晶圓保持頭26係在接取晶圓移載裝置23上的晶圊之後 22 1362698 (圓6(b))’利用第1移動手段33移動至第1平台2i上的 研磨位置而開始研磨加工（圊6 ( c ))» [ 0060〕 在此研房中，下一個要研磨的晶圃被載置於晶圓移載裝 置23上’之後’第2晶圓保持頭27係藉第2移動手段34 而移動至晶圓移載裝置23之接取位置以接取前述晶圓（圖6 (d))〇接著，第2晶圓保持頭27係利用第2移動手段34 移動至第2平台22上的研磨位置而開始研磨加工（圈6(e))e 〔 0061〕 如此’第1晶圓保持頭26係在第1平台21上研磨加工 晶®，同時，第2晶®保持頭27係在第2平台22上研磨加 工晶圓。 〔 0062〕 其次，當第1平台21上的晶圓研磨結束時，第i晶圓 保持頭26係藉第1移動手段33而移動至晶圓移載裝置23 的定位處所（圖6 (a))。接著，第1晶圓保持頭26排出已 研磨的晶圚，轉而接取被供給到晶圓移載裝置23上之未研 磨的晶面（圓6 (b))。之後’第1晶圓保持頭26係利用第 】移動手段33移動至第】平台21上的研磨位置而開始研磨 加工（囷6(c))。 〔 0063〕 另一方面，當第2平台22上之晶圓研磨結束時，第2晶 囡保持頭2了係藉第2移動手段34而移動至晶圓移載裝置23 之定位處所。接著’第2晶圓保持頭27排出已研磨的晶圓， 轉而接取被併給至晶圓移載裝置23上之未研磨的晶®(囷6 23 1362698 (d))« 〔 0064〕 之後，第2晶圓保持頭27係利用第2移動手段34移動 至第2平台22上的研磨位置而開始研磨加工。如此，第1 晶園保持頭26係再度在第1平台21上研磨晶圓，同時，第 2晶圓保持頭27係在第2平台22上研磨晶圓（圊6(e))。 在此之後’藉由依序反復圓6(a)〜圓6(e)所示的一連串 • 之動作工程，而於第1平台21與第2平台22分別有效率地 實施1階段研磨。 (0065) 亦即，在第1晶圓保持頭26移動至晶圓移載裝置23之 接取位置並接取未研磨的晶圓之後，移動至第1平台21上 的研磨位置而開始研磨加工。在那期間，下一個要研磨的晶 圓被載置於晶圓移載裝置23上，且在第2晶圓保持頭27移 動至晶圓移載裝置23之接取位置並接取晶圓之後，移動至 第2平台22上的研磨位置而開始研磨加工。 • 〔 0066〕 如此，第1晶圆保持頭26係在1平台21上實施研磨加 工’同時，第2晶圓保持頭27係在第2平台22上實施研磨 加工。以下，透過依序反復上述一連串的研磨動作多數的 晶圓係被有效率研磨。 〔 0067〕 如以上所述，能以第1平台21和第2平台22分別對晶 圓同時並行地實施1階段研磨，在此情況，由於未產生等待 時間，所以高的吞吐量受到確保。 24 〔 0068〕 〔 0068〕1362698 在上述i階段研磨之說明中，例舉了針對—個種類的晶 ®處理之情況w例子，而針對二個種義晶面，在將二個 種類的1階段研磨以於第,平台21和第2平台22上分別變 更研磨劑而同時並行地進行處理的情泥，亦可為前述的動作 工程。 〔 0069〕 其次，圖7 ( a)〜圖7 ( j )係表示以2階段研磨對晶 圊進行CMP處理的情況之研磨動作工程β在此，為使用第J 平台21與第2平台22雙方來對晶面實施2階段研磨，第i 乎台21與第2平台22中之研磨剤等的研磨條件係互異。在 圖示例中，當在第1平台21上實施第1工程的研磨後，在 第2平台22上實施第2工程的研磨。 〔 0070〕 首先，在圓3所示的晶圓移載裝置23之晶圓供給部28 載置晶圓之後’第1晶圓保持頭26藉第1移動手段33而移 動至晶圓移載裝置23上之接取位置（® 7 (a))。其次，第 1晶圊保持頭26係在接取晶圓移載裝置23上的晶圓之後（圖 7 (b))，利用第1移動手段33而移動至第1平台21上的研 磨位置而開始第1工程的研磨加工（圊7 (c))。 〔0071〕 夺此研磨中，下一個要研磨的晶圓被栽置於晶圓移載裝 置23的晶圓供給部28，之後，第2晶囬保持頭27藉第2移 動手段34而移動至晶面移載裝置23之接取位置》接著，第 2晶®保持頭27藉第2移動手段34而移動於晶圓移載裝置 25 1362698 23上並接取晶圓（圖7 (d))。 〔 0072〕 其次，當第1平台21上對晶圆進行的第1工程之研磨 結束時，第1晶圆保持頭26係利用旋轉移動手段35旋轉移 動至第2平台22上的研磨位置，對前述晶圓開始第2工程 的研磨加工（圖7 (e)、圓7 (f))«接著，第2晶圓保持頭 27透過第2移動手段34而移動至第1平台21上的研磨位置 並開始第1工程的研磨加工（圊7 (g))» [ 0073〕 如此，第1晶圓保持頭26係在第2平台22上實施第2 工程的研磨加工，同時，第2晶圊保持頭27係在第1平台 21上實施第1工程的研磨加工。 〔0074〕 接著，於第2平台21上結束針對晶圓之第2工程的研 磨加工時，第1晶圓保持頭26係藉第1移動手段33而移動 到晶圓移載裝置23上之接取位置（圈7(h))，排出已研磨 的晶圓’取而代之的是，接取被供給到晶圊移載裝置23上 之未研磨的晶圓。 〔 0075〕 另一方面，當在第1平台21上的第1工程之研磨結束 時’第2晶圓保持頭26係利用旋轉移勤手段35而旋轉移動 至第2平台22上的研磨位置，對前述晶圊開始第2工程的 研磨加工（圖7 ( i)、圖7 ( j))。之後，第1晶圓保持頭26 係透過第1移動手段33而移動至第1平台21上的研磨位 置，再度開始第1工程的研磨加工。 26 〔 0076〕 〔 0076〕1362698 在此之後’透過依序反覆圖7(a)〜圖7(j)所示之 一連串的動作工程，係對晶圓良好地實施2階段研磨<» 〔 0077〕 本實施例中，在上述旋轉移動手段35之旋轉中心位置， 設置有用以洗浄晶圓保持頭26、27的研磨頭洗淨裴置（參 照圖1的符號48) *且建構成、在晶圓保持頭26、27之洗淨 時，晶圓供給手段28與晶圊排出手段29可從旋轉中心位置 各自退避到晶圆搬入位置31與晶圓搬出位置32。 〔 0078〕 因此，於晶圓保持頭26、27之洗淨時，在使晶圓供給 手段28和晶圓排出手段29自旋轉中心位置退避到所要處所 之後，藉由使晶圓保持頭26、27移動到設置於旋轉中心位置 的研磨頭洗淨裝置48，以實施晶圓保持頭26、27的洗淨處 理。 〔 0079〕 依據此構成，由於在旋轉移動手段35之旋轉中心位置 設置有研磨頭洗淨裝置48,故可圊謀裝置整體的緊密化， 且，藉由使晶圓保持頭26、27移動到旋轉中心位置，可容易 且迅速地洗浄晶圓保持頭26、27。 〔 0080〕 又，由於含有晶圓供給手段28及晶圊棑出手段29的晶 圓移載裝置23與研磨頭洗淨裝置48是位在旋轉中心，所以 在晶圓保持頭26 (27)將已處理之晶圓朝晶圓排出手段29 載置之後，於研磨頭洗淨裝置48進行洗淨，迄至從晶圓供 27 1362698 給手段28接取處理用晶圓以前，晶圊保持頭26 ( 27)乃位在 旋轉中心，因而，他方的晶圓保持頭27 ( 26)可在第一平台 21與第二平台22之間旋轉，且沒發生研磨處理停滯的情形。 〔0081〕 如同以上說明，本實施例為，在使用1個平台21或22 進行1階段研磨的情況、與依序使用2個平台21、22進行2 階段研磨的情況雙方，可在未產生等待時間之下獨立且連續 φ 地實施研磨加工，所以能獲得高的吞吐量。 〔 0082〕 且，可於1階段研磨及2階段研磨雙方時常運作被併設 的2個平台21、22而進行研磨。如此一來，研磨加工的生 產性顯著提升，且實現緊密的構成，可缩小裝置整體之占有 空間。 〔 0083〕 再者，1階段研磨或2階段研磨之任一情況亦是，可在 未受各研磨加工之處理時間的比例所左右之下，圓滑地對晶 • 圓進行連續的研磨加工，故能實施生產效率好的1階段研磨 或2階段研磨。特別是，於2階段研磨結束第1研磨工程與 第2研磨工程之後，可直接圚滑地移行至下個研磨動作，故 亦沒有第1研磨工程與第2研磨工程其中一方會因他方的研磨 加工狀況而待機或動作停止的情形發生。在圊示例中，各平 台21、22與晶圓移載裝置23之間因設置有區隔壁38，所以 在研磨加工中，不會有供給到2個平台21、22其中一方的研 磨劑等之液體飛散至他方的平台21、22側之虞，可經常維 持清浄的研磨環境。 28 1362698 〔 0088〕 又，在第ICMP裝置10A與第2CMP裝置10B之間設置有 移送裝置49。該移送裝置49把第1CMP裝置10A所研磨過的 晶圓移送至第2CMP裝置10B。 〔 0089〕 如此一來，依據囷8的晶圊研磨系統11，在藉一方的晶 圊研磨裝置10A以2階段研磨對晶圓進行CMP處理之後，將 該晶圊移送至他方的晶圓研摩裝置10B，能再以1階段研磨 或2階段研磨實施CMP處理。 〔 0090〕 因此’整體而言係可對該晶圓實施3階段研磨或4階段 研磨’容易獲得高加工品質的晶圓。且透過分別進行相同的 1階段研磨、2階段研磨，可實現高吞吐量。再者透過各自 獨立地執行不同的1階段研磨、2階段研磨，也可同時地處 理複數種晶圓。 〔 0091〕 於本發明之實施例及動作說明中係以直線動作方式來 表示第一移動手段33、第二移動手段34，但是只要能將晶 圓保持頭分別定位在平台21 ( 22 )與晶圓移載裝置23上即 可’就算是旋轉動作移動手段亦可獲得效果。 〔 0092〕 本發明係可在不逸脫本發明的精神之下進行各種改 變’而且，本發明當然可及於該改變者。 30 1362698 〔圓式簡單說明〕 〔 0093〕 〔田1〕顯示本發明一個實施例，係表示晶圓研磨系統的上 視圖。 〔圖2〕顯示一實施例所涉及的晶圓研磨部中之平台及晶圓 移載裝置等之配置例的上視圓》 〔圖3〕顯示一實施例所涉及的旋轉移動手段與區隔壁附近 之部分斷面的側面圖》 〔圖4〕顯示一實施例所涉及的區隔壁之上壁部的設置例之 上視圖》 (圓5〕顯示一實施例所涉及的區隔壁之下壁部的設置例之 上視圖。 〔圈6(a )〜圖6 ( e )〕顯示一實施例所涉及的晶圓研磨裝 置之要部，圖6 (a)〜圃6 (e)係說明1階段研磨的各動 作之工程圈9 [圓7(a)〜圖7(j)〕顯示一實施例所涉及的晶圓研磨裝置 之要部，圖7 (a)〜圖7 ( j)係說明2階段研磨的各動作 之工程围。 〔圖8〕係例示本發明的其他實施形態之晶圓研磨***的上 視圖® 〔圖9〕晶圓研磨裝置之斜視圖。 31 1362698 〔主要元件符號說明〕 〔 0094〕 1〇 晶圓研磨裝置（OiP裝置） 11 晶圓研磨系統（CMP系統）1362698 IX. Description of the Invention: [Technical Field] [0001] The present invention relates to a wafer polishing apparatus, a wafer polishing system, and a crystal polishing method, in particular, relating to the use of a plurality of platforms and having one or two stages or more A wafer polishing apparatus, a wafer polishing system, and a crystal polishing method that perform polishing processing. [Prior Art] [0002] Conventionally, such a crystal surface polishing apparatus (CMP apparatus) 1 is provided with a platform 2 that is rotatably driven, and a polishing pad 3 that is adhered to the upper surface of the stage 2, as shown in FIG. a wafer holding head 4 capable of ascending and descending a wafer; and a supply nozzle (not shown) for supplying an abrasive to the polishing pad 3, and the platform 2 is configured to be driven by the motor 5 and rotatable through the rotating shaft 6 . [0003] At the time of wafer polishing, the wafer is pressed against the polishing pad 3 at a predetermined pressure, and the polishing pad 3 and the wafer are rotated while supplying the polishing agent on the polishing pad 3 to perform polishing. (0004) In the case of performing CMP processing on a plurality of wafers, from the viewpoint of improving throughput, although a plurality of wafers g are placed on the same platform and a plurality of wafers are simultaneously subjected to CMP processing, For a plurality of wafers, it is impossible to completely eliminate the high processing quality of the uniformity. Therefore, a method of performing CMP processing on one wafer by one platform is adopted. 5 1362698 4. [0005] Again, put j-wafers on one platform at a time! Stage grinding, that is, in the case of grinding in one project, or in the case of two-stage grinding, that is, in the middle of the grinding process (type of abrasive, grinding pressure, polishing speed, etc.), grinding in two projects, When the wafer supply and discharge are performed on i platforms, the throughput is lowered due to the waiting time. [0006] _ • Therefore, in order to improve the throughput, various polishing methods have been proposed in the past. For example, there are 1 platform and can be positioned! A unit (including a transfer device sharing unit) for holding a positioning means of one wafer holding head of the transfer device is used as a combination (for example, refer to Patent Document 2). Further, there are also n platforms and positioning means (n + ι) of crystal ai retention means (for example, refer to Patent Documents 3 and 4). [0007] In addition, two grasses having two platforms and positioning means for holding the crystal holding head of one transfer _ device are combined and shared! Platforms (for example, refer to Patent Document 5 '6). In addition, there are two platforms, and two positioning means for holding the wafer holding head that can be positioned on the transfer device, and are configured to control the respective positioning means to be independent of each other (for example, 'refer to Patent Document 7) [Patent Document 1] Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. 2, No. 4, 468, pp. Japanese Patent Laid-Open Publication No. Hei. No. 2, No. 5, No. 3, No. 3, No. 3, No. 332, 282, No. 〇〇〇 托 托 犯 〔 专利 专利 专利 专利 专利 专利 专利 m m m m m m m m m m m m m m m m m m m m m m m m m m m m m m m m m m m m m m m In the prior art, since it is difficult to carry out continuous polishing processing in the case of performing 2 • stage grinding, the processing efficiency is lowered. Further, in the prior art described in Patent Document 3 or 4, in the case where the two-stage polishing is performed, the CMp process can be continuously performed without performing the replacement wafer, but the 丨 stage polishing is performed. Since the CMP process is performed between a plurality of platforms, the productivity is lowered only during the movement of the wafer between the plurality of platforms. [0010] Further, the prior art described in Patent Document 5 or 6 performs the i-order. In the case of k-polishing, since the platform is not used, the size of the device is increased. Further, in the prior art described in Patent Document 7, high-efficiency polishing can be realized by both the one-stage polishing and the two-stage polishing. It is necessary to arrange the platform and the transfer device on the ® week, and to increase the rigidity of the positioning means to make the size of the display larger. [0011] In the prior art, generally, different types of abrasives are used and the abrasive is used. a plurality of platforms, and a multi-stage grinding method sequentially performed on each platform, or a 7 1362698 method of setting a wafer holding head by a plurality of platforms, etc. However, they are all long and short, and it is difficult to achieve high throughput in both the one-stage grinding and the multi-stage grinding, and that the number of the platform and the wafer holding head is increased, which has a problem that the size of the device as a whole becomes large. [0012] In order to solve the case of one-stage polishing using one platform, or to perform multiple-stage polishing using a plurality of platforms in sequence, the wafer can be polished with high throughput without shrinking the entire device. The present invention has been made to solve the problem. [Means for Solving the Problem] [0013] The present invention has been made to achieve the above object, and the invention described in the Patent Application No. a crystal surface polishing apparatus in which a wafer held by a wafer holding head is pressed against a polishing pad on a stage and is ground, and includes a second platform and a second platform which are spaced apart from each other; each is disposed on the first platform, a wafer holding head and a second wafer holding head that are movable up and down on the second stage; and disposed between the second platform and the second stage and placed before polishing The wafer and the wafer after the wafer are transferred to the wafer to move the head and stop at the first position of the first platform and the wafer transfer device; the second wafer holding head is moved Stopping the second moving means in the positioning position of both the second stage and the crystal transfer device; and supporting the first moving means and the second moving means, and rotating around the wafer transfer device The third holding means for moving the wafer holding head and the second wafer holding head to stop at the positioning position of the second stage and the first stage, and constructing the same by the first platform or the second stage The wafer 8 1362698 is rotated and moved to the positioning position of the second stage or the first stage to perform polishing. [0014] According to this configuration, in the case of one-stage polishing, the first stage and the second level are set to the same polishing condition for grinding. machining. First, the first wafer holding head is moved to the positioning position of the wafer transfer device by the moving means to hold the wafer, and the wafer holding head is moved to the positioning position of the first stage to start the polishing process. After the second wafer is placed on the wafer transfer device a little later, the wafer is held by the second wafer holding head in the same manner as described above, and moved to the positioning position of the second stage to start polishing. machining. [0015] In this manner, the two crystal planes are sequentially moved independently to the second platform of the second platform for polishing, and the polished wafers are sequentially moved to the wafer unloading portion of the wafer transfer device and discharged. Then, the third wafer and the fourth wafer to be carried into the wafer transfer device are respectively held by the first wafer holding head and the second wafer holding head, and the same procedure is repeated for one step. Grinding ❶ [0016] In the case of two-stage grinding, the first platform and the first grinding condition are first studied in the first stage, after the first crystal: after == the crystal position of the transfer device, the 't-th crystal The surface holding head moves to the wafer loading position of the wafer transfer device by the i-th moving means and rounds. Then, the first wafer holding head moves to the first! The grinding position of the platform begins to grind. [0017] On the other hand, the second wafer holding head moves to the wafer supply unit on the wafer transfer device by the second moving means to hold the second crystal field. Then, after the polishing of the i-th 1 136 698 wafers is completed, the first wafer holding head moves to the polishing position of the second stage by the third moving means and rotates, and the second wafer is borrowed. 2 Move to the grinding position of the second platform and start grinding. [0018] After the polishing of the first wafer is completed, the third wafer holding head is moved to the wafer transfer device to discharge the first wafer, and then the third wafer is held. Further, after the polishing of the second wafer is completed, the second wafer holding head is moved to the polishing position of the second stage by the third moving means to start polishing. After that, the above-mentioned work was repeated, and the second stage grinding system using the first platform and the second stage was sequentially performed. [0019] The invention according to claim 2, wherein the invention provides a wafer polishing apparatus that presses and polishes a wafer held by a wafer holding head against a polishing force on a stage, and is characterized in that: And the first platform and the second platform are provided, and the first wafer holding head and the second wafer holding head that are vertically movable above the second platform of the second platform are disposed; and the second platform and the second wafer are disposed. Between the platforms, a wafer transfer device for pre-polishing wafers and polished wafers is placed; and the first wafer holding head is moved and stopped at both the first stage and the wafer transfer device a second moving means for moving the second wafer holding head and stopping at a positioning position of both the second stage and the wafer transfer device; and supporting the first moving means and the second moving means' At the same time, the first wafer holding device is rotated around the first wafer holding head and the second wafer holding head, and the third moving means is stopped at the second platform and the first platform. The composition can be borrowed from the Dijon platform or the second flat The wafer polished by the station is rotated and moved at the position of 10 1362698 of the second platform or the first platform, and is further polished between the second platform and the wafer transfer device, and between the second platform and the wafer transfer device. Each of the partition walls for preventing liquid scattering is provided, and a passage for allowing the first wafer holding head and the second wafer holding head to pass therethrough is formed in the partition wall, and the partition wall is integrally rotatable with the third moving means. Settings. [0020] According to this configuration, it has the same function as the first item of the patent application range, and even if the first platform and the second platform are arranged close to each other, a region is provided between each platform and the wafer transfer device. Since the partition wall is used, the polishing agent or the like supplied to the two platforms is prevented from scattering to the other side of the platform during the grinding process. Further, a passage for allowing the movement of each wafer holding head is formed in the partition wall, and the partition wall is mounted so as to be rotatable integrally with the third moving means. Therefore, the wafer is transferred between the two platforms and the wafer transfer device. Keep the head movements without interfering with the compartment walls. [0021] The invention of claim 3 is the wafer polishing apparatus of claim 1 or 2, wherein the wafer transfer device is provided with a wafer loaded with an unpolished wafer The loading means and the wafer unloading means for carrying out the polished wafer, and the wafer carrying means and the wafer loading means are independently movable to a position corresponding to the rotation center position of the third moving means. [0022] According to this configuration, the wafer loading means and the wafer unloading means are alternately and independently movable to the position 6 corresponding to the rotation center position of the third moving means, so that the "unpolished wafer is attached to the wafer. The loading means is set to the wafer shift 1362698. The round grinding apparatus performs CMP processing on the wafer by two-stage polishing, and then transfers the wafer to another wafer polishing apparatus, and can perform CMP polishing by two-stage polishing or two-stage polishing. deal with. Therefore, the wafer is generally subjected to 3-stage grinding or 4-stage grinding. [0027] The invention described in claim 6 provides a method of polishing a wafer using a wafer polishing system of claim 5, which is provided with two wafer polishing apparatuses, which includes: carrying a wafer Performing a stage grinding or a two-stage grinding process to one of the two wafer grinding apparatuses; transferring the wafer that has performed the one-stage grinding or the two-stage grinding to the other wafer polishing apparatus by the transfer apparatus; And performing the one-stage grinding or the two-stage grinding on the wafer by the other wafer polishing apparatus, and performing three-stage grinding or four-stage grinding on the wafer according to the whole ship [0028] according to the method, First, after the wafer is transported to one of the wafer polishing apparatuses and subjected to one-stage polishing or two-stage polishing, the wafer is transferred to the other wafer polishing apparatus by the transfer device. Next, the above wafer is subjected to a stage grinding or a two-stage grinding. Accordingly, the wafer is subjected to three-stage polishing or four-stage polishing as a whole. [Invention Effect] [0029] The invention described in the scope of the patent application is based on the use of one platform to perform one stage at two locations. In the case of the polishing and the two-stage polishing using the two stages in sequence, the grinding process is continuously performed at 13 1362698 without generating the waiting time. Thus, high throughput can be obtained. In addition, since both the one-stage polishing and the two-stage polishing use two platforms that are closely connected, it is not only a productivity improvement but also a compact structure in which the space is small. f 0030) In addition, in either case of the first-stage grinding or the two-stage grinding, the continuous grinding process is not affected by the ratio of the processing time of each polishing process. Therefore, it is possible to carry out one-stage grinding with good production efficiency or 2 The stage polishing β is particularly smooth in the two-stage polishing, and after the first polishing process and the second polishing process, it can be smoothly transferred to the next polishing operation, and one of the second polishing process and the second polishing process is not included. In the case where the other side is in the state of grinding processing, it is possible to satisfactorily prevent corrosion of the wafer processing surface caused by the standby time. [0031] The invention according to the second aspect of the invention is not limited to the effect of the invention described in the first aspect of the patent application, because the partition wall is used to block the abrasive which is scattered from one of the two platforms toward the other side. It also prevents environmental pollution caused by the scattering of abrasives, and there is no difference in the types of abrasives, and the processing quality of wafers is improved. Moreover, the wafer holding head can be smoothly moved between the platform and the wafer transfer device without interfering with the partition wall. [0032] In the invention according to the third aspect of the invention, the wafer loading means and the crystal face carrying means are movable to a position corresponding to the rotation center position of the third moving means, and therefore the patent item Scope or Item In addition to the effects of the invention described in the second aspect, the unloaded crystal plane can be placed on the wafer supply position of the wafer transfer device by the wafer loading means, and the side loading means can be used. The ground wafer placed at the wafer discharge position on the wafer transfer device is surely carried out. Since the wafer transfer device is located at the center of rotation of the third moving means, even when the first wafer holding head or the second wafer holding head performs supply or discharge of the wafer with the wafer transfer device, It is also possible to use the third moving means to freely position the other wafer holding head on the two platforms. [0033] In the invention described in the fourth paragraph of the patent application, the polishing head cleaning device is provided at the center of the third moving hand I, and therefore the first, second or second patent application scope is applied. In addition to the effects of the invention described in the three items, the structure is tight, and the light can be easily and quickly washed by moving the wafer holding head to the center of rotation. Since the polishing head cleaning device is located at the center of rotation of the third moving means, the first wafer holding head or the second wafer holding head can be used when the polishing head is cleaned by the polishing head cleaning device. 3 The mobile means freely positions the other wafer holding heads on two platforms. [0034] According to the invention of claim 5, the desired multi-stage (three-stage or more) polishing can be performed by sequentially transferring the wafer to two or more wafer polishing apparatuses. Therefore, it is easy to obtain wafers of high processing quality. [0035] The invention described in claim 6 is capable of performing three-stage grinding or four-stage grinding by sequentially transferring wafers to two wafer polishing apparatuses and performing grinding processing in a plurality of processes. Therefore, it is possible to easily manufacture a wafer β having a higher polishing quality than the conventional one while maintaining the productivity improvement 15 1362698. [Embodiment of the present invention] C 0036) The present invention achieves the so-called use of one When the stage is subjected to one-stage polishing or when a plurality of stages are sequentially used to perform multi-stage polishing, the wafer can be polished with high throughput, and the entire apparatus is not enlarged to reduce the occupied space. The wafer polishing apparatus is a wafer polishing apparatus that presses a wafer held by a wafer holding head against a polishing pad on a stage and grinds the wafer polishing apparatus, wherein: And the first platform and the second platform are provided, and the first wafer holding head and the second wafer holding head that are vertically movable above the first platform and the second platform are disposed; Between the stage and the second stage, a wafer transfer device for pre-polishing wafers and polished wafers is placed; the first wafer holding head is moved and stopped at the first platform and wafer transfer a first moving means for positioning the both sides of the apparatus; a second moving means for moving the second holding head and stopping at a positioning position of both the second stage and the wafer transfer apparatus; and supporting the first moving means and In the second moving means, the third wafer moving device is rotated to move the first wafer holding head and the second wafer holding head, respectively, and stops at the positioning position of the second stage and the first stage. The moving means is constructed such that the wafer polished by the first stage or the second stage is rotated by the positioning of the second stage or the first stage, so that the polishing is performed. 16 1362698 [Example] [0037] Hereinafter, A preferred embodiment of the present invention will be described with reference to Figs. In this embodiment, the first crystal holder holder and the second crystal face holder are disposed above the first stage and the second stage, and the wafer is placed between the two stages. The first wafer holding head and the second wafer holding head are moved to the positioning positions of the two φ stages and the wafer transfer device by the first moving means and the second moving means, respectively. One-stage grinding can be performed with high throughput. (0038) Further, by rotating the two wafer holding heads to the platform on the opposite side by the rotary moving means (the third moving means) for supporting the two moving means, the two stages can be implemented with high throughput. Grinding. Further, since the two platforms and the moving means can be closely arranged, it is possible to reduce the size of the entire device and reduce the occupied area. [0039] The circle 1 shows the top view circle of the CMP system 11 according to the present embodiment. As shown in the figure, the CMP system 11 includes a wafer polishing unit 12, a wafer cleaning unit 3 disposed on one side of the crystal surface polishing unit 2, and a crucible disposed in the wafer cleaning unit 13. The wafer storage unit 14 on one side is provided with a cleaning device 15 and a wafer storage cassette 16 in each of the wafer cleaning unit 13 and the wafer storage unit 14'. [0040] The crystals that are carried into the wafer polishing unit 12 are subjected to CMP treatment by one-stage polishing or two-stage polishing, and the polished wafers are transferred to the transportation machine 17 1362698 arm 17 and transported to the crystal ffl to be washed. Part 3, using the washing device 15 for washing. Then, the cleaned wafer is transferred to the transport robot arm 8 and transported to the wafer housing portion 14 and stored in the wafer storage unit. (0041) Next, the configuration of the CMP apparatus 1A provided in the wafer polishing section 12 will be described in detail. In the wafer polishing unit 12, the first stage 21 and the second stage 22 that can be rotationally driven by a motor (not shown) are provided at predetermined intervals, and are attached to the upper surface of the Φ 1 stage 21 and the second stage 22, respectively. There are a first polishing pad 24 and a second polishing pad 25. Further, a wafer transfer device 23 is disposed between the first stage 21 and the second stage 22, and the wafer transfer device 23 mounts the crystal face before polishing and the crystal face after grinding. [0042] Further, above the first polishing pad 24 and the second polishing pad 25, a first wafer that can be lifted and rotatably driven by holding the wafer and pressing each of the polishing pads 24 and 25 at a predetermined pressure is provided. The holding head 26, the second wafer holding head 27, and a supply nozzle (not shown) for supplying the polishing material to each of the polishing pads 24 and 25 are provided. [0043] Therefore, the crystal faces held by the respective wafer holding heads 26 and 27 are pressed against the polishing pads 24 and 25, and the polishing pads 24 and 25 and the wafer are rotated while being supplied to the polishing pads 24 and 25. The abrasive, whereby the underside of the wafer is ground. C 0044 ] As shown in FIG. 2 , the wafer transfer device 23 is respectively provided with a wafer supply means 28 and a wafer discharge means 29, and the wafer supply means 28 can be moved to the crystal transfer position 3丨, and is in the crystal The round sprinkling position 31 is supplied from the transport robot 18 1362698 to the wafer holding heads 26 and 27, and the wafer discharge unit 29 is moved toward the wafer unloading position 32. The processed wafers picked up from the wafer holding heads 26 and 27 are transferred to the transport robot 17 〇1 0045. Further, the first movement is provided above the wafer transfer device 23 and the stages 21 and 22. The means 33 and the second moving means 34» as the first moving means 33 and the second moving means 34 can be driven by a ball screw driving method or a cylinder pulsing method, and the first moving means 33 and the second moving means. At 34, the first wafer holding head 26 and the second wafer holding head 27 are movably supported. [0046] Therefore, by using the first moving means 33, the first! The wafer holding head 26 reciprocates between the wafer loading device 23 and the first stage 21, and the first wafer holding head 26 is moved to the polishing position of the wafer transfer device 23 and the first stage 21, and Being positioned, that is, building the first! The wafer holding head 26 is moved by the first moving means 33 and stopped at the positioning position (polishing position, wafer transfer position) of both the second stage 21 and the wafer transfer unit 23. [0047] Similarly, the second wafer holding head 27 is reciprocated between the wafer transfer device 23 and the second stage 22 by the second moving means 34, whereby the second wafer holding head 27 is moved. The polishing position of the wafer transfer device 23 and the second stage 22 is positioned, that is, the second wafer holding head 27 is moved by the second moving means 34 to stop the second stage 22 and transfer the wafer. Positioning locations (grinding position, wafer transfer position) of both devices 23. 19 [0048] 1362698 Further, a rotary moving means 35 belonging to the third moving means is attached to the upper side of the wafer transfer device 23. The rotational moving means 35 supports the first moving means 33 and the second moving means 34, and simultaneously uses the wafer. The transfer device 23 rotates in the center, and moves the first wafer holding head 26 and the second wafer holding head 27 to stop at the positioning position (polishing position) of the second stage 22 and the first stage 21 (0049). • Therefore, by the rotary moving means 35, the first wafer holding head 26 is rotated 180 degrees horizontally around the wafer transfer device 23 together with the first moving means 33, and is rotated to the opposite side of the second platform 21 2 The grinding position of the platform 22 is stopped. Similarly, by the rotational movement means 35, the second wafer holding head 27 is rotated first by 180 degrees around the wafer transfer device 23 by the second moving means 34, and is rotated to the first side opposite to the second stage 22. Further, the polishing position of the stage 21 is stopped and β is formed at a position corresponding to the rotational t center position of the rotational movement means 35, and the wafer unloading means 31 and the wafer loading means 32 are alternately movable independently of each other. As shown in FIG. 3, the rotational movement means 35 has a rotation support portion (not shown) on the outer peripheral portion of the member that swings the first movement means 33 and the second movement means 34, and is driven by a motor (not shown). The first wafer holding head 26 and the second wafer holding head 27 are disposed to face each other in the outer peripheral portion of the rotational movement means 35. [0051] Therefore, the 'rotational movement means 35 is only rotated by 180 degrees by the motor pulsation, whereby the first wafer holding head 26 and the second wafer holding head 27 are 20 1362698 on the first stage 21 and the second stage. Rotational movement between the platforms 22" [0522] In the present embodiment, "the liquid scattering prevention is provided between the first stage 21 and the wafer transfer device 23, and between the second stage 22 and the wafer transfer device 23". The partition wall 38' is used to prevent the liquid such as the polishing agent supplied to the upper surface of the rotating first platform 21 or the second stage 22 from scattering to the second stage disposed opposite the first stage 21 or the second stage 22. 22 or the first platform 21 side. [0053] As shown in FIG. 3, the partition wall 38 is formed by the upper wall portion 39 and the lower wall portion (the auxiliary wall portion) 40. The upper wall portion 39 is attached so as to be rotatable integrally with the rotational movement means 35, and the upper wall portion As shown in FIG. 4, the upper view shape of 39 is a pair of vertical surface portions 41 disposed between the first stage 21 and the second stage 22, and the first stage 21 and the second stage are provided from both ends of the vertical surface portion 41. The arcuate surface portions 42 and 43 formed by the outer peripheral shape of the stage 22 are formed. [0054] Further, a passage connecting the first stage 21 and the second stage 22 is formed inside the pair of vertical faces 41. The passage 44 allows the first wafer holding head 26 and the second crystal holding head. 27 moves. Therefore, the first wafer holding head 26 and the second crystal face holding head 27 are formed by the passage 44 so as to be movable without interfering with the partition wall 38. [0055] The lower wall portion 40 is covered by the arcuate surface portion 45 fixed between the wafer transfer device 23 and the first stage 21 and the second stage 22, and is covered by the upper end of the arc surface portion 45. 1 is formed by a horizontal surface 46 connected to the upper surface of the second platform 22 (Fig. 3 and Fig. 5) » 21 1362698 [0056] by providing a region between the aforementioned platforms 21, 22 and the wafer transfer device 23. The partition wall 38 is configured such that the polishing agent or the like supplied onto the first stage 21 or the second stage 22 does not scatter to the second stage 22 and the first stage 21 on the opposite side during the wafer polishing. Since the prior art has disclosed a technique of cleaning the abrasive which is scattered to the wall surface by pure water or the like (not shown), the front wall portion 39 is moved by the rotational movement means 35 before the φ front direction Since the polishing agent scattered on the wall surface is washed, even if the upper wall portion 39 is rotated, the polishing agent used in the first stage 21 and the second stage 22 is not brought into the second stage 22 and the first stage 21 The situation. (0057) Next, the operation of the present embodiment will be described. The operation units constituting the CMP system 11 are collectively operated in accordance with a predetermined operation program through a control device (not shown). FIG. 6(a) to FIG. 6 (e) shows the operation work when the wafer is subjected to CMP processing by one-stage polishing. In addition, for convenience of explanation, the illustration of the same-circle t moving means 33, 34, 35, etc. is omitted. [0058] Here, in order to perform one-stage polishing on the first stage 21 and the second stage 22, respectively, The polishing conditions of the polishing agent or the like set in the first stage 21 and the second stage 22 are the same as each other. [0059] First, after the wafer is placed on the wafer supply unit 28 of the wafer transfer device 23 shown in FIG. 3, the first wafer holding head 26 is moved to the wafer by the first moving means 33. The pick-up position of the carrier device 23 (Fig. 6 (a)), secondly, the first wafer holding head 26 is used after the wafer pick-up on the wafer transfer device 23 22 1362698 (circle 6 (b)) The first moving means 33 moves to the polishing position on the first stage 2i to start the grinding process (圊6 (c))» [0060] In this research room, the next wafer to be ground is placed on the wafer. On the carrier device 23, the second wafer holding head 27 is moved to the pick-up position of the wafer transfer device 23 by the second moving means 34 to pick up the wafer (Fig. 6 (d)). The second wafer holding head 27 is moved to the polishing position on the second stage 22 by the second moving means 34, and the polishing process is started (circle 6(e)) e [0061]. Thus, the first wafer holding head 26 is attached. The first stage 21 is polished to form a crystal, and the second crystal holding head 27 is used to polish the wafer on the second stage 22. [0062] Next, when the wafer polishing on the first stage 21 is completed, the i-th wafer holding head 26 is moved to the positioning position of the wafer transfer device 23 by the first moving means 33 (Fig. 6 (a) ). Next, the first wafer holding head 26 discharges the polished wafer, and then picks up the unpolished crystal face (circle 6 (b)) supplied to the wafer transfer device 23. Thereafter, the first wafer holding head 26 is moved to the polishing position on the first stage 21 by the first moving means 33, and the polishing process is started (囷6(c)). [0063] On the other hand, when the wafer polishing on the second stage 22 is completed, the second wafer holding head 2 is moved to the positioning position of the wafer transfer device 23 by the second moving means 34. Then, the second wafer holding head 27 discharges the polished wafer, and then picks up the unpolished crystals (囷6 23 1362698 (d)) « [ 0064 ] which are fed to the wafer transfer device 23 . The second wafer holding head 27 is moved to the polishing position on the second stage 22 by the second moving means 34 to start the polishing process. In this manner, the first wafer holding head 26 re-polists the wafer on the first stage 21, and the second wafer holding head 27 polishes the wafer on the second stage 22 (圊6(e)). After that, the first stage 21 and the second stage 22 are efficiently subjected to one-stage polishing by sequentially repeating a series of operations shown in the circle 6 (a) to the circle 6 (e). (0065) In other words, after the first wafer holding head 26 moves to the pick-up position of the wafer transfer device 23 and picks up the unpolished wafer, the first wafer holding head 26 is moved to the polishing position on the first stage 21 to start the polishing process. . During that time, the next wafer to be polished is placed on the wafer transfer device 23, and after the second wafer holding head 27 is moved to the pick-up position of the wafer transfer device 23 and the wafer is picked up. The grinding process is started by moving to the polishing position on the second stage 22. [0066] In this manner, the first wafer holding head 26 is subjected to polishing processing on the first stage 21, and the second wafer holding head 27 is subjected to polishing processing on the second stage 22. Hereinafter, a plurality of wafer systems are efficiently polished by repeating the above-described series of polishing operations in sequence. [0067] As described above, the first stage 21 and the second stage 22 can perform the one-stage polishing on the wafers in parallel at the same time. In this case, since the waiting time is not generated, the high throughput is secured. 24 〔 0068〕 〔 0068〕 1362698 In the description of the above-mentioned i-stage grinding, the case of the case of the treatment of the crystals of one kind is exemplified, and for the two kinds of crystal planes, the two stages of the two types are In the polishing, the slurry on which the polishing agent is changed on the stage 21 and the second stage 22 while being processed in parallel may be the above-described operation. [0069] Next, Fig. 7(a) to Fig. 7(j) show the polishing operation project β in the case where the wafer is subjected to CMP treatment by two-stage polishing, in which the Jth stage 21 and the second stage 22 are used. The two-stage polishing is performed on the crystal face, and the polishing conditions of the polishing pad and the like in the i-th stage 21 and the second stage 22 are different. In the example of the drawing, after the polishing of the first project is performed on the first stage 21, the polishing of the second stage is performed on the second stage 22. [0070] First, after the wafer is placed on the wafer supply unit 28 of the wafer transfer device 23 shown in the circle 3, the first wafer holding head 26 is moved to the wafer transfer device by the first moving means 33. Pick-up position on 23 (® 7 (a)). Next, the first wafer holding head 26 is moved to the polishing position on the first stage 21 by the first moving means 33 after the wafer on the wafer transfer device 23 is picked up (FIG. 7(b)). Start the grinding process of the first project (圊7 (c)). [0071] In the polishing, the next wafer to be polished is placed in the wafer supply unit 28 of the wafer transfer device 23, and then the second crystal return holding unit 27 is moved by the second moving means 34 to The pick-up position of the wafer transfer device 23 is followed by the second crystal holder 14 moving on the wafer transfer device 25 1362698 23 by the second moving means 34 and picking up the wafer (Fig. 7 (d)) . [0072] Next, when the first polishing of the wafer on the first stage 21 is completed, the first wafer holding head 26 is rotationally moved to the polishing position on the second stage 22 by the rotational movement means 35. The wafer is subjected to the second processing (Fig. 7 (e), circle 7 (f)). Next, the second wafer holding head 27 is moved to the polishing position on the first stage 21 by the second moving means 34. Grinding processing of the first project (圊7 (g))» [0073] In this manner, the first wafer holding head 26 performs the polishing process of the second project on the second stage 22, and the second wafer is maintained. The head 27 performs the polishing process of the first project on the first stage 21. [0074] When the polishing process for the second process of the wafer is completed on the second stage 21, the first wafer holding head 26 is moved to the wafer transfer device 23 by the first moving means 33. The position (circle 7 (h)) is taken out, and the ground wafer is discharged. Instead, the unground wafer supplied to the wafer transfer device 23 is taken. [0075] On the other hand, when the polishing of the first project on the first stage 21 is completed, the second wafer holding head 26 is rotationally moved to the polishing position on the second stage 22 by the rotary moving means 35. The polishing process of the second project is started for the wafer (Fig. 7 (i), Fig. 7 (j)). Thereafter, the first wafer holding head 26 is moved to the polishing position on the first stage 21 by the first moving means 33, and the polishing process of the first process is resumed. 26 [0076] [0076] 1362698 After that, by repeating a series of operation projects shown in Fig. 7(a) to Fig. 7(j), the wafer is well polished in two stages. <» [0077] In the present embodiment, at the center of rotation of the rotational movement means 35, a polishing head cleaning means for cleaning the wafer holding heads 26, 27 (see reference numeral 48 in Fig. 1) is provided. When the wafer holding heads 26 and 27 are cleaned, the wafer supply means 28 and the wafer discharge means 29 can be retracted from the rotation center position to the wafer loading position 31 and the wafer unloading position 32, respectively. [0078] Therefore, when the wafer holding heads 26 and 27 are cleaned, after the wafer supply means 28 and the wafer discharge means 29 are retracted from the center of rotation to the desired position, the wafer holding head 26 is 27 moves to the polishing head cleaning device 48 provided at the center of rotation to perform the cleaning process of the wafer holding heads 26 and 27. According to this configuration, since the polishing head cleaning device 48 is provided at the rotational center position of the rotational movement means 35, the entire apparatus can be compacted, and the wafer holding heads 26, 27 can be moved to The wafer holding heads 26, 27 can be easily and quickly washed by rotating the center position. [0080] Further, since the wafer transfer device 23 including the wafer supply means 28 and the wafer discharge means 29 and the polishing head cleaning device 48 are located at the center of rotation, the wafer holding head 26 (27) will be The processed wafer is placed on the wafer discharge means 29, and then cleaned by the polishing head cleaning device 48 until the processing wafer is supplied from the wafer 27 1362698 to the means 28, and the wafer holding head 26 is held. (27) is located at the center of rotation, and thus, the other wafer holding head 27 (26) is rotatable between the first stage 21 and the second stage 22, and no grinding process is stagnant. [0081] As described above, in the present embodiment, when one stage of polishing is performed using one stage 21 or 22, and two stages of polishing are performed by using two stages 21 and 22 in sequence, both waits without waiting. The grinding process is performed independently and continuously φ under the time, so that high throughput can be obtained. [0082] Further, both of the two stages 21 and 22 which are disposed in parallel can be polished in one-stage polishing and two-stage polishing. As a result, the productivity of the grinding process is remarkably improved, and the compact structure is realized, which can reduce the space occupied by the entire device. [0083] In addition, in either case of one-stage polishing or two-stage polishing, the crystal/circle can be smoothly polished without being subjected to the ratio of the processing time of each polishing process. It is possible to carry out one-stage grinding or two-stage grinding with good production efficiency. In particular, after the first polishing process and the second polishing process are completed in the two-stage polishing, the polishing process can be smoothly performed to the next polishing operation. Therefore, one of the first polishing process and the second polishing process is not polished by the other. The situation occurs when the processing is in standby or the operation is stopped. In the example of the crucible, since the partition walls 38 are provided between the stages 21 and 22 and the wafer transfer device 23, there is no abrasive supplied to one of the two stages 21 and 22 during the polishing process. The liquid scatters to the side of the other side of the platform 21, 22, and can often maintain a clean grinding environment. 28 1362698 [0088] Further, a transfer device 49 is provided between the first ICMP device 10A and the second CMP device 10B. The transfer device 49 transfers the wafer polished by the first CMP device 10A to the second CMP device 10B. [0089] In this way, according to the wafer polishing system 11 of the crucible 8, after the wafer is subjected to CMP treatment by one-stage polishing by one of the wafer polishing apparatuses 10A, the wafer is transferred to another wafer polishing apparatus. 10B, the CMP treatment can be carried out again by one-stage grinding or two-stage grinding. [0090] Therefore, the wafer can be subjected to three-stage polishing or four-stage polishing as a whole, and it is easy to obtain a wafer of high processing quality. High throughput can be achieved by performing the same one-stage grinding and two-stage grinding separately. Furthermore, by performing different one-stage polishing and two-stage polishing independently, it is also possible to simultaneously process a plurality of wafers. [0091] In the embodiment and the operation description of the present invention, the first moving means 33 and the second moving means 34 are shown in a linear motion manner, but the wafer holding heads can be respectively positioned on the stage 21 (22) and the crystal. The circular transfer device 23 can be used to achieve an effect even if it is a rotary motion moving means. [0092] The present invention can be variously modified without departing from the spirit of the invention. Further, the present invention is of course applicable to the changer. 30 1362698 [Circular Simple Description] [0093] [Field 1] shows an embodiment of the present invention and shows a top view of the wafer polishing system. FIG. 2 is a top view showing an arrangement example of a stage and a wafer transfer device in the wafer polishing unit according to the embodiment. FIG. 3 shows a rotary moving means and a partition wall according to an embodiment. A side view of a portion of a cross section in the vicinity (Fig. 4) shows an upper view of an example of the arrangement of the upper wall portion of the partition wall according to the embodiment. (Circle 5) shows the lower wall portion of the partition wall according to an embodiment. (1) to 6(e) show the main parts of the wafer polishing apparatus according to an embodiment, and FIGS. 6(a) to 6(e) show the first stage. The engineering circle 9 for each operation of the polishing [circles 7(a) to 7(j)] shows the main parts of the wafer polishing apparatus according to an embodiment, and FIGS. 7(a) to 7(j) are descriptions 2 [Fig. 8] is a top view of a wafer polishing system according to another embodiment of the present invention. Fig. 9 is a perspective view of a wafer polishing apparatus. 31 1362698 [Description of main component symbols] [0094] 1〇 Wafer Grinding Device (OiP Device) 11 Wafer Grinding System (CMP System)
12 晶圓研磨部 13 晶圓洗淨部 14 晶圓故納部 15 洗淨裝置 16 晶圓枚納用匣 17、 18 搬運用機械手臂 21 第1平台 22 第2平台 23 晶圓移載裝置 24 第1研磨墊 25 第2研磨墊 26 第1晶圓保持頭 27 第2晶圓保持頭 28 晶圓供給手段 29 晶圓排出手段 31 晶圓搬入位置 32 晶圓搬出位置 33 第1移動手段 34 第2移動手段 35 旋轉移動手段（第3移動手段） 38 區隔壁 39 上壁部 40 下壁部 41 鉛直面部 42、 43、45 圓弧面部 44 通路 46 水平面部 48 研磨頭洗淨裝置 49 移送裝置（分配手段） 1 晶圓研磨裝置 2 平台 3 研磨垫 4 晶圓保持頭 5 馬達 6 旋轉軸 10A 第1GMP研磨裝置 10B 第2GMP研磨裝置 3212 Wafer polishing unit 13 Wafer cleaning unit 14 Wafer processing unit 15 Cleaning device 16 Wafer receiving unit 17 and 18 Transportation robot 21 First platform 22 Second platform 23 Wafer transfer device 24 First polishing pad 25 second polishing pad 26 first wafer holding head 27 second wafer holding head 28 wafer supply means 29 wafer discharge means 31 wafer loading position 32 wafer carry-out position 33 first moving means 34 2 moving means 35 rotary moving means (third moving means) 38 partition wall 39 upper wall portion 40 lower wall portion 41 vertical surface portions 42, 43, 45 arcuate surface portion 44 passage 46 horizontal surface portion 48 polishing head cleaning device 49 transfer device ( Distribution means) 1 Wafer polishing apparatus 2 Platform 3 Polishing pad 4 Wafer holding head 5 Motor 6 Rotary shaft 10A First GMP polishing apparatus 10B Second GMP grinding apparatus 32