1356728 六、發明說明： .· 【發明所屬之技術領域】 1 - 本發明涉及一種消除廢氣的電漿反應器和使用該電漿反應器的滌氣裝 - 置，尤其涉及消除廢氣的電漿反應器，該廢氣由半導體等工業中的風扇或 泵等排氣單元排出，以及使用此反應器的滌氣裝置。 【先前技術】 近來各種半導體裝置或液晶裝置的製造快速開發，製造過程後所排出 的氣體對於人體及地球暖化有巨大有害的效應，因為氣體有毒或可燃。因 此，這些廢氣需要盡可能地處理後排出。當前用於半導體裝置製造過程的 氣體可基於製程分類。首先，在蝕刻製程中，CF4、SF6、CHF3、C2F6、SiF/、 F2、HF以及NF3等含氟氟體用於姓刻氧化碎、氮化石夕和多晶石夕，d、HQ、 BCI3、SiCU、CCI4以及CHCI3等含氣氣體用於餘刻銘和碎，Hgr及βΓ2等 含/臭氣體用於溝道钱刻或與CL 一起钱刻銘。在化學氣相沉積製程(cm) 中，魏、N2以及NH3添加到反應器中。在電讓輔助化學氣相沉積製程 (PECVD)中，全氟化物（Perfluorinatedcompounds，PFCs)或 QF 用於青理 反應器内部，此時’產生SiF4，該氣贱劇毒性、可燃性且可氧化的。因 此，當不進行處理就排出氣體，會引致許多人體和全球環境的問題。 此氣體注入用於姓刻或CVD製程的半導體製造設備中，然後排出。 排出氣體含機量未反應賴。從前，含有未反聽體的氣體不進行任 處理排至空氣中。然而’近綠氣裝置用於在半導體製造的製程 體，為了最小化對人體和全球變暖的影響。,贼裝置通常指處理 體 或液晶製造過程情排ih氣體的裝置。贼裝置大體上分為直 個裝置後觸主W«置，以及安裝於料主要職裝置的次 ^ 置。進-步地’主要聽裝置分為乾式賊裝置、燃魏氣裝置以及渴 錢裝置。然而，近來藉由《燒_裝置和濕核氣裝置混造「 是將燃燒滌氣裝置和乾式滌氣裝置混合製造而進行改良。5 濕式務氣裝置’舰财應H將水注人氣體以進行純化和 裝置的_在於可以利用簡單製程方便地製造、具有簡單的結構S3 3 13567.28 大容積。然而’濕錢氣裝置不能處理惰性氣體，且不適於處理 2燃氣體。進-步地，由於濕式職裝置產生大水 水處理設備。因此，操伸_必朗加， t =廢 燃燒臟綱軸嫩_糧卿，熱 ΪΓί應器Γ1接燃燒型。燃燒務氣裝置對於可燃氣體具有優秀3理 率〜、而’由於燃燒務絲置的溫度不足於分解如 ，氣裝=適於難於分解的廢^進—步地，峨靴 洗過程，以處理一次有害材料的副產品。 2經?性、穩定性和效率而使用由燃燒式和濕式混合製造的 ，乳裝置^而’在現有的混合魏裝置中，燃燒反應器有小内徑和大長 °因而，職娜據大部分的安裝面積，且 _乳體保持在燃燒室陳長時間，因此，滌氣裝置易被舰 因為條氣裝置中’氣體經過高溫燃燒反應器並與水 ^ 陷，而積聚能量’這樣需要苒维嗜如收畑痤w Η 丨刀名、，口構缺 止，而導致產能下降 維雜修理費。進一步地，主要過程可能停 【發明内容】 氣由氣的電細器，穩定地保持和產生電漿，廢 半導體等J1業巾的風扇或泵等排氣單元所排出。 褒，供，氣裝置’透過由電槳反應器所產生的電漿以消除廢 ；；氣匕括半導體等工業中的風扇或泵等排氣單元所排出。 道、士…面戶斤&供的電漿反應器包括：一高頻振盈器、-供電單元、-頻=二—#錄，一高㈣極以及一額外供氣單元。高 ==產生的高㈣排谢導入經由導波管傳輸的= 氣體。排氣管支架安裝排氣管於排氣管支架上，且排氣 放2Γίί 。高塵電極安裝於排氣管支架上，沿排氣管支架產生 仏’同時將親導人減。解供鮮元提供額外氣體 的電漿以及經由導波管傳輪至排氣管之高頻所產生的高 4 1356728 電漿反應器和使用電漿反應器的滌氣裝置對於廢氣提供高流速的穩定 電漿。因此，即使氣體的流速和成份基於操作條件而變化，可有效地消除 廢氣’這樣可提供穩定滌氣裝置 【實施方式】 以下參照附圖進一步描述實施例，其中顯示實施例。本發明可體現為 許多不同形式，但不構成前述示例實施例的限定。而是，這些實施例的提 供將本發明更徹底更完整，將完全地向本領域技術人員傳達本發明的範 圍。在描述中，省略已經特徵和技術的細節，以避免造成本發明不必要的 繁瑣。 此處所用的術語在於描述特定實施例，不構成對本發明的限定。如所 使用的’單數形式“一個” “該，，意在包括多數形式，無論内容是否清晰 地指出。進一步地，使用術語一個、該等不表示限定數量，只表示存在最 少一個參考專案。使用術語“第一”、“第二”等不表達任何特定次序， 只是為了區別單個元件。進一步地，使用術語“第一，，、“第二”等不表 達任何次序或重要性，而是術語“第一”、“第二，，等用於區分元件彼此。 可進一步理解’術語“包括，，當用於說明書時’具體說明存在特徵、範圍、 整體、步驟、操作、元件和/或元件，但不排除存在或附加一個或多個其他 特徵、範圍、整體、步驟、操作、元件、元件和/或它們的群。 除非定義，此處所用的所有術語（包括技術和科學術語）與本領域技 術人員的通常理解具有相同的含義。進一步理解通常字典所用的術語，將 解釋為具有與相關技術和現有技術相同的含義，而不解釋為理想化或超過 通常感知，除非明白地限定。 在圖中，圖的相同標號表示相似的元件。為清楚起見，圖的形狀、尺 寸、範圍等可能會擴大。 第1圖所示為消除在半導體製程中所排出廢氣的電漿滌氣裝置的示意 圖。 ，〇 程的旋轉栗30以氮氣清洗，未反應的廢氣以氮氣排出。在本發明的電浆 參考第1 ® ’廢氣依次地由管泵20排人空氣、通過真空管進 3〇 ’在半導體製程中，氣體還沒有在真空泵1Q中反應1為用於半導體^ 滌 5 中’Λ高頻電漿和滑動電槳組成的整體電漿系統50安裝於旋轉泵如 電漿!二Λ除使用電11在一大氣壓下、由旋轉系30排出的廢氣，在整體 浆糸統50處理的廢氣經由濕式滌氣裝置8〇進入空氣。 第2圖為本發明的整體電漿反應器5〇的剖面圖。 參=2圖’本伽的整體電漿反應㈣包括供電料5、高頻減1356728 VI. Description of the invention: 1. The technical field of the invention 1 - The present invention relates to a plasma reactor for eliminating exhaust gas and a scrubber apparatus using the same, and more particularly to eliminating plasma reaction of exhaust gas The exhaust gas is discharged from an exhaust unit such as a fan or a pump in a semiconductor industry, and a scrubber apparatus using the reactor. [Prior Art] Recently, the manufacture of various semiconductor devices or liquid crystal devices has been rapidly developed, and the gas discharged after the manufacturing process has a huge detrimental effect on the human body and the global warming because the gas is toxic or flammable. Therefore, these exhaust gases need to be treated as much as possible and discharged. Gases currently used in semiconductor device fabrication processes can be classified based on process. First, in the etching process, fluorine-containing fluorine such as CF4, SF6, CHF3, C2F6, SiF/, F2, HF, and NF3 is used for the surname oxidized ash, nitrite and polycrystalline slab, d, HQ, BCI3, Gas-containing gases such as SiCU, CCI4, and CHCI3 are used for the engraving and shredding, and the odor-containing gases such as Hgr and βΓ2 are used for channel engraving or with CL. In the chemical vapor deposition process (cm), Wei, N2 and NH3 were added to the reactor. In electrically assisted chemical vapor deposition (PECVD) processes, perfluorinated compounds (PFCs) or QF are used in the interior of the blue reactor, where SiF4 is produced, which is highly toxic, flammable and oxidizable. . Therefore, the discharge of gas without treatment can cause problems in many human and global environments. This gas is injected into a semiconductor manufacturing apparatus for a surname or CVD process and then discharged. The exhaust gas contains no amount of reaction. In the past, gases containing unanti-hearing bodies were discharged into the air without any treatment. However, the near-green gas device is used in processes for semiconductor manufacturing to minimize the effects on the human body and global warming. The thief device usually refers to a device that processes the gas or the liquid crystal manufacturing process. The thief device is roughly divided into a straight device and then touched the main W«, and installed in the main device of the material. The main listening device is divided into a dry thief device, a gas-fired device, and a thirsty device. However, recently, the "burning device and the wet nuclear gas device are mixed" is to improve the mixture of the combustion scrubber and the dry scrubber. 5 Wet gas service device For purification and equipment, it can be easily manufactured by a simple process, and has a simple structure S3 3 13567.28 large volume. However, the 'wet money gas device cannot handle the inert gas, and is not suitable for treating the 2 gas gas. Step by step, Because the wet-type equipment produces large water treatment equipment, therefore, the operation and extension _ Binglang, t = waste burning dirty shaft _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Excellent 3 rate ~, and 'because the temperature of the burning wire is not enough to decompose, such as gas installation = suitable for the difficult to break down the waste - step, the boot process, to treat a byproduct of harmful materials. For the sake of stability, stability and efficiency, the use of a combination of combustion and wet mixing, the milk device ^ and 'in the existing mixed Wei device, the combustion reactor has a small inner diameter and a large length. Installation area, _The milk body stays in the combustion chamber for a long time. Therefore, the scrubbing device is easy to be trapped by the ship because the gas passes through the high-temperature combustion reactor and accumulates energy. w Η The name of the knives, the lack of mouth structure, resulting in a decline in production capacity and maintenance costs. Further, the main process may stop [invention] gas-based gas cooler, stable maintenance and generation of plasma, waste semiconductor The exhaust unit of a fan or pump such as a J1 towel is discharged. 褒, the gas supply device 'passes the plasma generated by the electric paddle reactor to eliminate waste; the gas includes a fan or pump in industries such as semiconductors. The exhaust unit is discharged by the exhaust unit. The plasma reactor includes: a high frequency vibrator, a power supply unit, a frequency=two-# recording, a high (four) pole, and an additional air supply unit. High == generated high (four) Thanks to introduce the = gas transmitted through the waveguide. The exhaust pipe bracket is installed with the exhaust pipe on the exhaust pipe bracket, and the exhaust is placed 2 Γ ίί. The high dust electrode is installed in the exhaust pipe bracket On the top, along the exhaust pipe bracket to generate 仏 ' at the same time will be pro-guided The reduction of the amount of electricity supplied by the fresh element to provide fresh gas and the high frequency generated by the high frequency of the waveguide to the exhaust pipe. The 1 1356728 plasma reactor and the scrubber unit using the plasma reactor provide the exhaust gas. High flow rate stable plasma. Therefore, even if the flow rate and composition of the gas vary based on operating conditions, the exhaust gas can be effectively eliminated. This can provide a stable scrubber device. [Embodiment] Embodiments will be further described below with reference to the accompanying drawings, in which The present invention may be embodied in many different forms, and is not to be construed as limiting the scope of the foregoing exemplary embodiments. In the description, the details of the features and the techniques are omitted in order to avoid the unnecessary simplification of the present invention. The terminology used herein is for the purpose of describing particular embodiments and is not intended to limit the invention. As used, the singular forms "a", "the" are intended to include a plurality of forms, whether or not the content is clearly indicated. Further, the use of the terms one, the terms does not denote a finite quantity, and only that there is at least one reference item. The terms "first", "second", etc. do not denote any particular order, only to distinguish a single element. Further, the use of the terms "first,", "second", etc. does not denote any order or importance, but rather the term "First," "second," and the like are used to distinguish the elements from each other. It is further understood that the term "term" includes, when used in the specification, 'detailed to the existence of features, ranges, integers, steps, operations, components and/or components. The existence or addition of one or more of the other features, the scope, the whole, the steps, the operation, the elements, the elements, and/or their groups are not excluded. Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning meaning Further understanding of the terms used in the dictionary is to be interpreted as having the same meaning as the related art and the prior art, and is not to be construed as an idealization or exceeding the usual perception unless explicitly defined. In the figures, the same reference numerals are used to refer to the like. For the sake of clarity, the shape, size, range, etc. of the figure may be expanded. Figure 1 is a schematic illustration of a plasma scrubber that eliminates exhaust gases from the semiconductor process. The rotary pump 30 of the process is purged with nitrogen, and the unreacted exhaust gas is discharged with nitrogen. In the plasma of the present invention, reference numeral 1 ® 'exhaust gas is sequentially discharged from the tube pump 20 to the air through the vacuum tube. In the semiconductor process, the gas has not been reacted in the vacuum pump 1Q 1 for use in the semiconductor device 5 The whole plasma system 50 consisting of high-frequency plasma and sliding electric paddles is installed in a rotary pump such as plasma! In addition to the use of electricity 11 at a large pressure, the exhaust gas discharged from the rotating system 30, in the overall pulp system 50 The treated exhaust gas enters the air via the wet scrubber 8 . Figure 2 is a cross-sectional view of the overall plasma reactor 5A of the present invention.参=2图' The overall plasma reaction of Benga (4) includes power supply 5, high frequency reduction
管40、導波管52、排氣管支架56、騎氣體注人部他及娜、 飞卜供氣早疋64、提供燃料的支架60和高壓電極7(N 睥向續振盈器15供電。例如，當高頻振盪11 15產生微波 Ϊ徂Γ 2,5GGMHZ °在此，高頻缝器15係指磁電管。當電 =磁電管時，來自供電單心的電麵範圍㈣至錢V。高頻振盡 ^所產生的高頻54導人導波管25卜魏㈣在_導波管Μ的一 ===位置具有Γ中灿（在此，&是在導波管中的波長）’該排 二二:直於導波管25 ’且可由石英、強化玻璃、陶竟、铭等可傳輸 電材料形成。排氣管4G由排氣管支架56支撐，具有複數侧流 =體58a和58b ’透過複數偏流氣體注入部撕和娜將渦流氣體 注入排U 40。複數個渴流氣體注入部撕和娜以等間距安裝。由渴流 氣體注入部58a和58b注入的渦流氣體形成沿排氣管支架％和排氣管4〇 =内壁的H雌氣射包括氧氣、氮氣、空氣、惰性氣體、碳氯氣及 其混合氣。渦流氣體不僅用作電聚氣體，還用於穩定排氣管4〇中產生的電 槳。進-步地’渴流氣體用於防止排氣管4〇受到由電聚引起的高輻射孰的 損害。 … 一女f於排氣管支架56以及排氣管4〇之中心軸的高麼電極％由可承受 南溫和南壓的$緣材料的支架92支# ’支架％與職管支架％相連接。 基^上’純電極7G雜方向形成具有不變直徑的圓柱形 ，但上端部 f有直徑逐漸增加錢減,】、的形狀。高㈣極7。的所有角都是圓滑的。在 冋壓電極70和作為接地電極的魏管支架％之間的放電在兩電極間最近 的位置，始’旋轉流動賴74由麟氣體產生。因為電㈣交流⑽和直 流(DC)高Μ低電流所產生，呈現與電弧放電之電槳非常不同的特徵。 電漿74的火焰長度足夠大，因此電浆74可引入排氣管辦，而高頻 電漿110係由引人聽管4G的高頻產生。例如，係高頻電肢應器藉由上 1356728 述使用线的結構自動職所產生的高頻魏，提供至少5kW的高壓。然 而’即使在數百瓦特下’高頻電漿110的產生可藉由如火花裝置的點火裝 置之協助來完成。 在高頻電漿點火通常情況下，插人排氣管的鎢電極火花裝置產生高頻 電漿。然而’此火花裝置很快地被所產生的高溫高頻電浆氧化而不再提 供火花。進-步地’由於高頻電漿敏感地回應所注人氣體誠速，電槳會 熄滅。因而’為使高頻電槳即使在氣體可變的流速下也不誠，並穩定地 保持，點火裝置的角色非常重要。在本發_電漿反應器中，由高愿電極 70所產生的電漿即使在大於5，_L/min的高流速中也不媳滅，且電聚％ 的火焰長度足夠大’高頻電紫很容易產生。具有與低溫電弧性質相同之電 漿74的火焰溫度範圍為500至5,〇〇〇〇c，對排氣管中的氣壓變化不敏感， 而能夠穩定地點燃高頻電漿。因此，因為電漿係由滑動電弧的非熱電聚 區域產生化學活性物體，南壓電極70所產生的電聚74不僅用作點燃高頻 電漿110的點火裝置，還用於改善電漿化學反應。 高溫高頻電漿110容易由作為接地電極的排氣管支架56與高壓電極7〇 間產生的電漿射生，安躲健料支架6G _外供氣單元64可對高頻 電毁11G提供額外氣體’關助絲化學反應。例如’ #碳氫氣體作為額 外氣體提供時，可能產生由電漿和燃料火焰組成之高溫、高體積電漿火焰 120。在此’蒸氣、氧氣和氫氣可作為額外氣體注入。當在廢氣中分解氣化 鲁合物時’將具有附於氟化合物之氫(H)的額外氣體轉化為氫氣酸(Ηρ)，氣氟 酸很容易藉由電漿化學反應處理。 在支架60的上端，可安裝連接塊62以利於與濕式滌氣裝置的連接。 第3圖為使用本發明電漿反應器的電漿滌氣裝置的示意圖。 參考第3圖，由旋轉泵30排出的濕氣體，經由廢氣連接管323、3冰 注入廢氣注入部34a、34b中。可安裝複數個廢氣連接管，注入廢氣注入部 34a、34b中的廢氣作為旋轉流動渴流氣體。廢氣轉化為電漿副產品，同時 流經滑動電弧電漿和高頻電漿。進一步地，將電漿副產品引入與g漿氣體 排氣管90相連的濕式滌氣裝置中。 ' ” 第4圖為第5圖的廢氣注入部分的剖面圖。 參考第4圖’複數個廢氣注入部34a、34b、34c、34d可等間距地安裝 ^56728 於排氣管支架56内壁的切線方向上。安裝廢氣注入部34a、34b、34c、34d 致使作為渴流氣體的廢氣以均勻地方式旋轉流動，從而完成電漿穩定，因 而提高整體電漿系統的處理效率。進一步地，廢氣注入部34a、34b、34c、 34d的安裝角度可設定在上方向呈〇至9〇度。 第5圖為使用本發明電漿反應器的電漿滌氣裝置另一示例的示意圖。 參考第5圖，第3圖和第4圖的廢氣注入部安裝在導波管25的上部。 安裝於支架60的廢氣注入部84a、84b不僅可以此方式安裝，從而垂直於 轴方向注入廢氣’而且還可以安裝於支架60内壁的切線方向，從而使廢氣The tube 40, the waveguide tube 52, the exhaust pipe bracket 56, the gas-injecting unit, the He and Na, the Feibu gas supply 64, the fuel-providing bracket 60, and the high-voltage electrode 7 (N 睥 continuation vibrator 15 For example, when the high frequency oscillation 11 15 generates microwave Ϊ徂Γ 2,5GGMHZ ° here, the high frequency splicer 15 refers to the magnetron. When the electricity = magnetron, the range of the electrical surface from the power supply single core (four) to the money V The high-frequency vibration is generated by the high-frequency 54-leading waveguide 25 Wei (4) at the position of the _guide tube = === has a Γ中灿 (here, & is the wavelength in the waveguide) 'The row two two: straight to the waveguide 25' and can be formed by quartz, tempered glass, Tao Jing, Ming and other transportable electrical materials. The exhaust pipe 4G is supported by the exhaust pipe bracket 56, with a plurality of side flow = body 58a And 58b', the vortex gas is injected into the row U 40 through the plurality of biased gas injection portions, and the plurality of thirst gas injection portions are torn at equal intervals. The vortex gas injected by the thirsty gas injection portions 58a and 58b is formed along the vortex gas. Exhaust pipe bracket % and exhaust pipe 4 〇 = inner wall H female air injection includes oxygen, nitrogen, air, inert gas, carbon chlorine and their mixing The vortex gas is used not only as an electropolymer gas but also to stabilize the electric paddle generated in the exhaust pipe 4〇. The thirst gas is used to prevent the exhaust pipe 4 from being high by electropolymerization. Damage to the radiant sputum. ... A female f in the central axis of the exhaust pipe bracket 56 and the exhaust pipe 4 么 high electrode% by the support of the south edge and south pressure of the $ edge material bracket # ' bracket% with The tube holders are connected to each other. The base of the pure electrode 7G forms a cylindrical shape with a constant diameter, but the upper end portion f has a diameter gradually increasing, and the shape of the high (four) pole 7. Sleek. The discharge between the rolling electrode 70 and the Wei tube holder as the ground electrode is the closest position between the two electrodes, and the initial 'rotating flow ray 74 is generated by the lining gas. Because of the electric (four) alternating current (10) and direct current (DC) The sorghum low current is generated, which is very different from the electric discharge of the arc discharge. The flame length of the plasma 74 is sufficiently large, so the plasma 74 can be introduced into the exhaust pipe, and the high frequency plasma 110 is made to be attractive. The high frequency of the tube 4G is generated. For example, the high frequency electric limb device is described by 1356728 The high-frequency Wei produced by the automatic structure of the line provides a high voltage of at least 5 kW. However, 'even at hundreds of watts', the generation of the high-frequency plasma 110 can be accomplished by the assistance of an ignition device such as a spark device. High-frequency plasma ignition Normally, the tungsten electrode spark device inserted into the exhaust pipe generates high-frequency plasma. However, this spark device is quickly oxidized by the generated high-temperature high-frequency plasma to no longer provide spark. - Step by step 'Because the high-frequency plasma responds sensitively to the speed of the injected gas, the electric paddle will be extinguished. Therefore, in order to make the high-frequency electric paddle evenly under the variable flow rate of the gas, it is stably maintained and ignited. The role of the device is very important. In the present invention, the plasma generated by the high-power electrode 70 does not annihilate even at high flow rates greater than 5, _L/min, and the flame length of the electropolymer % Large enough 'high frequency electric purple is easy to produce. The plasma 74 having the same properties as the low temperature arc has a flame temperature range of 500 to 5, 〇〇〇〇c, which is insensitive to changes in the gas pressure in the exhaust pipe, and is capable of stably igniting the high frequency plasma. Therefore, since the plasma is a chemically active object generated by the non-thermally-electropolymerized region of the sliding arc, the electropolymer 74 produced by the south-pressure electrode 70 is used not only as an ignition device for igniting the high-frequency plasma 110 but also for improving the plasma chemical reaction. . The high-temperature high-frequency plasma 110 is easily generated by the plasma generated between the exhaust pipe holder 56 as the ground electrode and the high-voltage electrode 7, and the externally-supported material support 6G_outer air supply unit 64 can provide high-frequency electric destruction 11G. The extra gas 'closes the wire chemical reaction. For example, when the # hydrocarbon gas is supplied as an additional gas, a high-temperature, high-volume plasma flame 120 composed of a plasma and a fuel flame may be generated. Here, 'vapor, oxygen and hydrogen can be injected as an additional gas. When the gasification condensate is decomposed in the exhaust gas, an additional gas having hydrogen (H) attached to the fluorine compound is converted into hydrogen acid (Ηρ), which is easily treated by a plasma chemical reaction. At the upper end of the bracket 60, a connecting block 62 can be installed to facilitate connection to the wet scrubber. Figure 3 is a schematic illustration of a plasma scrubber using the plasma reactor of the present invention. Referring to Fig. 3, the wet gas discharged from the rotary pump 30 is injected into the exhaust gas injection portions 34a and 34b via the exhaust gas connecting pipes 323 and 3. A plurality of exhaust gas connecting pipes may be installed, and the exhaust gas injected into the exhaust gas injection portions 34a, 34b serves as a swirling flow of the thirsty gas. The exhaust gas is converted into a plasma by-product while flowing through the sliding arc plasma and the high frequency plasma. Further, the plasma by-product is introduced into a wet scrubber connected to the g-gas exhaust pipe 90. Fig. 4 is a cross-sectional view of the exhaust gas injection portion of Fig. 5. Referring to Fig. 4, a plurality of exhaust gas injection portions 34a, 34b, 34c, 34d can be mounted at equal intervals to the tangent of the inner wall of the exhaust pipe holder 56. In the direction, the exhaust gas injection portions 34a, 34b, 34c, and 34d are caused to cause the exhaust gas as the thirsty gas to be rotated in a uniform manner, thereby completing the plasma stabilization, thereby improving the processing efficiency of the overall plasma system. Further, the exhaust gas injection portion The mounting angle of 34a, 34b, 34c, 34d can be set to 〇 to 9 degrees in the upper direction. Fig. 5 is a schematic view showing another example of the plasma scrubber using the plasma reactor of the present invention. The exhaust gas injection portions of Figs. 3 and 4 are attached to the upper portion of the waveguide 25. The exhaust gas injection portions 84a, 84b attached to the bracket 60 can be mounted not only in this manner, but also injecting exhaust gas perpendicular to the axial direction and can also be mounted on The tangential direction of the inner wall of the bracket 60, thereby making the exhaust gas
旋轉流動。進一步地’複數個廢氣注入部84a、84b可以等間距地安裝於相 對於支架60的〇至90的角度方向上。 電漿反應器及使用電漿反應器的滌氣裝置對於廢氣提供高流速的穩定 電浆°這樣’即使氣體的流速和成份基於操作條件變化，也可有效地消除 廢，，這樣可提供穩定滌氣裝置。因此，電漿反應器和使用電漿反應器的 膝氣裝置的制性在需要減少廢^領域相當高。 备呈現和描述示例實施例時，本領域技術人員可以理解，形式和細節 的各種變化不偏離本發明所要求的權利範圍。 =外，可進行許多改進以接受特定情況或材料，從而不偏離本發明的 本質範圍地教示本發明。從而，可見，所揭示的内容不限定於作為實施本Rotating flow. Further, the plurality of exhaust gas injection portions 84a, 84b may be mounted at equal intervals in the angular direction of the crucible 90 to the bracket 60. The plasma reactor and the scrubber unit using the plasma reactor provide a stable flow plasma with high flow rate for the exhaust gas. Thus, even if the flow rate and composition of the gas are changed based on the operating conditions, the waste can be effectively eliminated, thus providing a stable polyester. Gas device. Therefore, the viability of the plasma reactor and the knee gas apparatus using the plasma reactor is quite high in the field of the need to reduce waste. Various changes in form and detail may be made without departing from the scope of the invention as claimed. In addition, many modifications may be made to adapt a particular situation or material to the invention without departing from the scope of the invention. Thus, it can be seen that the disclosed content is not limited to being implemented as
發明的最佳實施例的示例實施例，本發明還可包括申請專利範圍的所有實 施例。 <產業應用性〉 電衆反絲及使用絲反應H職氣裝置對於純提供高流速的穩定 電漿。這樣，即使氣體的流速和成份基於操作條件變化，也可有效地消除 $ ’這樣可提供穩定蘇氣裝置1此，電漿反應器和使用電漿反應器的 條氧裝置的細性在f要減少廢氣的卫業領域相當高。 特徵和優點藉由結合附圖的以下詳細描述而更 【圖式簡單說明】 本發明的上述或其他目的、 清晰地理解。 8 1356728 第1圖所示為消除在半導體過程中所排出廢氣的電漿滌氣裝置的示意圖； 第2圖為本發明的完整電漿反應器50的剖面圖； 第3圖為使用本發明電漿反應器的電漿滌氣裝置的示意圖； 第4圖為第3圖的廢氣注入部分的剖面圖；以及 第5圖為使用本發明電漿反應器的電漿滌氣裝置另一示例的示意圖。 【主要元件符號說明】 5 供電單元 10 真空泵 15 高頻振盪器 20 管泵 25 導波管 30 旋轉泵 32a廢氣連接管 32b廢氣連接管 34a廢氣注入部 34b廢氣注入部 34c廢氣注入部 34d廢氣注入部 40 排氣管 50 整體電漿系統/整體電漿反應器 52 導波管 54 局頻 56 排氣管支架 58a渦流氣體注入部 58b 渦流氣體注入部 60 支架 62 連接塊 64 額外供氣單元 70 高壓電極 1356728 74 電漿 80 濕式滌氣裝置 84a廢氣注入部 84b廢氣注入部 90 電漿氣體排氣管 92 支架 110高頻電漿 120 電漿火焰The exemplary embodiments of the preferred embodiments of the invention may also include all embodiments of the scope of the claims. <Industrial Applicability > The electric counter-wire and the wire-reacting H gas device are used to provide a stable plasma with a high flow rate. In this way, even if the flow rate and composition of the gas are changed based on the operating conditions, it can effectively eliminate the cost of providing a stable gas system. The plasma reactor and the strip oxygen device using the plasma reactor are fine. The field of maintenance of waste gas is quite high. The above and other objects of the present invention will be clearly understood from the following detailed description of the drawings. 8 1356728 Fig. 1 is a schematic view showing a plasma scrubber for eliminating exhaust gas discharged in a semiconductor process; Fig. 2 is a cross-sectional view of the complete plasma reactor 50 of the present invention; and Fig. 3 is a view showing the use of the present invention Schematic diagram of a plasma scrubber of a slurry reactor; FIG. 4 is a cross-sectional view of the exhaust gas injection portion of FIG. 3; and FIG. 5 is a schematic view of another example of a plasma scrubber apparatus using the plasma reactor of the present invention; . [Main component symbol description] 5 Power supply unit 10 Vacuum pump 15 High-frequency oscillator 20 Tube pump 25 Guide tube 30 Rotary pump 32a Exhaust gas connection pipe 32b Exhaust gas connection pipe 34a Exhaust gas injection portion 34b Exhaust gas injection portion 34c Exhaust gas injection portion 34d Exhaust gas injection portion 40 Exhaust pipe 50 Overall plasma system / Monolithic plasma reactor 52 Waveguide 54 Local frequency 56 Exhaust pipe bracket 58a Vortex gas injection part 58b Vortex gas injection part 60 Bracket 62 Connection block 64 Additional gas supply unit 70 High voltage electrode 1356728 74 plasma 80 wet scrubber 84a exhaust gas injection part 84b exhaust gas injection part 90 plasma gas exhaust pipe 92 bracket 110 high frequency plasma 120 plasma flame