P63960016TW 26235twf.doc/d 九、發明說明： 【發明所屬之技術領域】P63960016TW 26235twf.doc/d IX. Description of the invention: [Technical field to which the invention belongs]
本發明是有關於-種薄膜太陽能電池模植及I 方法，且特別是有關於-種能夠在製程中對薄膜太陽二 池模組進行檢測的薄膜太陽能電池模組及其製造方 【先前技術】 衣 太陽能是-種具有永不耗盡且無污㈣能源，在解決 目刖石化能騎面_污染與短缺的_時，^ 矚目的焦點。其中，又以太陽能雷咄β& 疋攱又 能，而成為目前相當重要的:d接== ===等優點，_太陽= 電池===均=;換效率 G =時’由於電池模“ 隨之大二;二==電'域組的發電效4 ⑽加抑中提種也^^的^測，在·，228,662、 明電極/光電轉換層/金屬電極4成 1356501 P63960016TW 26235twf.doc/d 組，利用兩根探針或是陣列式探針與薄膜太陽能電池 的金屬電極麵’藉此提供逆向電壓以檢測其巾的電也、9 否因為光電轉換層中的孔洞而產生短路，進而藉由破壞^ 洞中的金屬或使其氧化以進行修復。 又 然而’上述的先前技術是藉由將探針與薄膜太陽能 ==的金屬電極接觸以進行檢測，其魏僅只能檢杳 件於残糾的性質，如了解衫有短路發 士但^膜太陽能電池模組的不良原因是來自於透明带 Ϊ二對於已形成基底/透明電極/光電轉換層/金屬電極社 =缚膜太陽能電池模組而言，先前的技術並 ； 進行有效的檢測’並且亦無法檢測出發生= 以及無法確實了解元件真正的光電轉換特性。 有鑑於上述的問題，本發明的目的在於提供—種薄膜 池模組，能夠對_太陽能電池模組中連接基板 的電極進行電性檢測。 本發明的另一目的在於提供一種 現有的_太陽能電‘組的製 2明提出-種薄膜太陽能電池模組的製造方法。首 成第一電極材料層。接著移除部分第一電極 數以：=數: 7 1356501 P63960016TW 26235twf.doc/d 分^轉換材料層1於第—帶狀電極上方 一 x方向開σ的多數條第二X方向開口，並縣電^振= 光ί，。之後形成第二電極材料層以覆t ^ f狀電極與基板。然後移除部分第-電 ==;第曝露=轉換層表面的平行於第--成多數條第向開σ ’以使第二電極材料層形 層中的χ方向^極’並於第二電極材料層與光電轉換 材料層與雜光近’沿¥方向移除部分第二電極 露出第-帶狀電】==兩端部各形成-條曝 分光==:=模*組的製造方法中，於移除部 第一㈣步射’第二X方向開口的長度小於 兩端部於接並且光電轉換材料層的χ方向的 -= 上述薄膜太陽能電池模組的製造方法中，第-、第 ί備方向開σ以及γ方向開口是_雷射切割方式 材料模組的製造方法中，第-電極 包括氧化辞物= 材料ΐΐίίίί陽能電池模組的製造方法中，光電轉換 的;或堆叠層結構，並且’光電轉換材料層 料。，’、'、㉟半導體、本質型半導體或Ν型半導體材 8 1356501 P63960016TW 26235twf.doc/d 在上述薄膜太陽能電池模組的製造方法中，光電轉換 材料層包括矽，且矽的結晶方式為非結晶矽、單晶矽 晶矽。 在上述薄膜太陽能電池模組的製造方法中，第二電極 材料層為金屬層或金屬與透明電極組合而成，並且金屬層 的材5包括銘、銀、銅、鉬或其合金，且透明電極其材i 包括氧化鋅(ZnO)、二氧化錫(Sn〇2)、氧化銦錫伽出㈣如 oxide ’ ITO)或氧化銦(In2〇3)。 ，發月另#出一種薄膜太陽能電池模組，包括第一電 極、第二電極以及光電轉換層。第一電極配置在基板上， 是:沿X方向延伸且平行排列的多數條第-f狀電極喊。第二€極崎在第—電極上方，且第 mi:向延伸且平行排列的多數條第二帶狀電極組 置於第1極與第二電極之間，並且光 紅成。其中於第二電極與光電轉換 =部附近至少各具有—條曝露出第一電極表面：γ 在上述薄膜太陽能電池模組中，光 的兩端部於丫方向互相連接。 職換層的X方向 董仆ΐί"4賴太陽能電賴組巾，第―電極為透明導電 化锡Li透明導電氧化物層的材質包括氧化鋅、二氧 化錫、氧化銦錫或氧化銦。 在上述缚膜太陽能電池模組中，光電轉換層為單層結 9 P63960016TW 26235twf.doc/d 構或堆疊層結構，並且，# + 型半導體、本質型半導體材料層的組成材料為p 士干等體或^型半導體材料。 在上述薄膜太陽能電池模 梦，且料結晶方式為非Ο。，轉換材料層包括 在上述薄臈太陽心二早;=。 金屬與透明_合终Μ / — =為金屬層或 銅、銦或其合金，且相電核其材括H 錫、氧化鋼錫或氧化銦。〃、匕&辞、-氧化 本發明的薄膜太陽能電池模組形 一私 極的γ方向開口，因此本 处j弟一―电 連接基板㈣-電極(透明電極)進行各_紐檢測。 轉二x=:，膜太陽能電池模組中，由於光電 γ 方向的料部於¥方向為互相連接，而暴露出 古極的Y方向開口料二電極與光電轉換層在又 $末兩端部分別形成一阻擋層，能夠阻擒水氣與氧氣的 此外，由於本發明的薄膜太陽能電池模組僅藉由對雷 身〇刀割製紐些許的更動即可達成，因此能夠沿用現有的 涛膜太陽能電池的製程，具有容易製造，幾乎不會增 造成本等優點。 /為讓本發明的上述和其他目的、特徵和優點能更明顯 易懂’下文特舉較佳實施例並詳細說明如下。 【實施方式】 圖1至圖6為依照本發明的一實施例所繪示的薄膜太 1356501 P63960016TW 26235twf.d〇c/d 圖也造方法的流程示意圖。其中H至圖 的韻上視示意圖，子_請示沿剖面線Ι-Γ 的“面不思圖’子圖（0是繪示沿剖面線 圖。子是繪示沿剖面線购π，㈣示:彻思 本實施例的薄膜太陽能電池额卿 g、 ==101。薄膜太陽能電池模 向= 以及配置於其上方的第一電極极 電轉換層H)6a。其中，第一雷梅舰弟；；^極1G8a與先 其直接配置在基板102上Λ 例是透明電極， 日承π, 1 上方，並由沿χ方向延伸 狀iru的多數條第二帶狀電極所組成。而且，第—帶 另外，光t ㈣極驗是料行舞方式配置。 之ΐ轉換層咖配置於第一電極_與第二電極 狀光電轉換黯㈣湖的多數條帶 中於請繼續參照圖6，如圖6⑷與圖6(d)所示，I 、 电極108a與光電轉換層i〇6a中的X方θ '、 =口4少各具有-條曝露出第-電極丨〇:表面Π 的^方108c。此外’如圖6(c)所示，其中光電轉換層1〇6 、2向的兩端部於Y方向是互相連接的。 3閱圖6(d) ’由於本實施例的薄膜太陽能電 -、路出第一電極104a表面的γ方向開口 108c，闵、 囚此 11 1356501 P63960016TW 26235twf.doc/d 能夠如同後述的對第—電極刚a(透明電極）進行電 且查由於光電轉換層1G6^X方向的兩端部於， ^ - 暴露出第-電極1〇4晰方向開口 108c 電極⑽a與光電轉換層施在又方向的最末兩端 刀別形成了阻擋層’從而能夠阻擋水氣與氧氣的進入。 ’以圖1至圖6詳細說明本實施例的薄膜太陽能 電池模組〗00的製造方法。The present invention relates to a thin film solar cell module and I method, and particularly relates to a thin film solar cell module capable of detecting a thin film solar diode module in a process and a manufacturer thereof [Prior Art] The solar energy is a kind of energy that never runs out and is free of pollution (4). When it comes to solving the problem of pollution and shortage of the petrochemicals, it is the focus of attention. Among them, the solar thunder β & 疋攱 疋攱 能 疋攱 疋攱 疋攱 相当 相当 相当 相当 相当 相当 相当 : : : : : : : : : : : : : : d d d d d d d = = = = = = = = = = = = = = = = = = = = = = = = "With the sophomore; the second == electricity' domain group's power generation efficiency 4 (10) plus suppression in the middle of the ^ ^ ^ ^ ^ ^, 228, 662, the electrode / photoelectric conversion layer / metal electrode 4 into 13565501 P63960016TW 26235twf. In the doc/d group, two probes or array probes are used to contact the metal electrode face of the thin film solar cell to thereby provide a reverse voltage to detect the electric power of the towel, and 9 to cause a short circuit due to a hole in the photoelectric conversion layer. And then repairing by destroying the metal in the hole or oxidizing it. However, the above prior art is to detect by contacting the probe with a metal electrode of the thin film solar energy==, and the Wei can only be inspected. The nature of the residual correction, such as understanding the short circuit of the shirt, but the bad reason for the film solar cell module is from the transparent tape 对于 for the formed substrate / transparent electrode / photoelectric conversion layer / metal electrode = binding film solar energy For the battery module, the previous technology The detection 'and the inability to detect the occurrence of = and can not really understand the true photoelectric conversion characteristics of the component. In view of the above problems, the object of the present invention is to provide a film cell module capable of connecting the substrate in the solar cell module The electrode is electrically detected. Another object of the present invention is to provide a method for manufacturing a thin-film solar cell module of the prior art, which is first formed into a first electrode material layer. The number of the first electrodes is: = number: 7 1356501 P63960016TW 26235twf.doc / d The conversion material layer 1 is opened in the x-direction of a plurality of second X-direction openings in the x-direction above the first strip electrode, and the county electricity is vibrating = light ί, after forming a second electrode material layer to cover the t ^ f electrode and the substrate. Then remove part of the first - electric ==; first exposure = the surface of the conversion layer parallel to the first - a plurality of strips σ 'to make the second electrode material layer layer in the χ direction ^ pole ' and the second electrode material layer and the photoelectric conversion material layer and the stray light near 'to the direction of the ¥ remove part of the second electrode to expose the first strip-shaped electricity 】== at both ends In the manufacturing method of the group-strip exposure light==:=module* group, the length of the second X-direction opening in the first (four) step of the removal portion is smaller than the length of the two ends of the photoelectric conversion material layer In the manufacturing method of the thin film solar cell module, the first and the λ directions and the γ direction opening are the manufacturing methods of the laser cutting type material module, and the first electrode includes the oxidation word = material ΐΐ ί ί ί In the manufacturing method of the battery module, photoelectric conversion; or stacked layer structure, and 'photoelectric conversion material layer material, ', ', 35 semiconductor, intrinsic semiconductor or germanium type semiconductor material 8 1356501 P63960016TW 26235twf.doc/d In the above method for manufacturing a thin film solar cell module, the photoelectric conversion material layer includes ruthenium, and the crystallization mode of ruthenium is amorphous ruthenium or single crystal ruthenium iridium. In the above method for manufacturing a thin film solar cell module, the second electrode material layer is a metal layer or a combination of a metal and a transparent electrode, and the material 5 of the metal layer comprises inscription, silver, copper, molybdenum or an alloy thereof, and the transparent electrode The material i includes zinc oxide (ZnO), tin dioxide (Sn〇2), indium tin oxide (4) such as oxide 'ITO' or indium oxide (In2〇3). And a thin film solar cell module comprising a first electrode, a second electrode and a photoelectric conversion layer. The first electrode is disposed on the substrate, and is a plurality of strip-f electrodes that extend in the X direction and are arranged in parallel. The second strip is above the first electrode, and the mith: a plurality of second strip electrode groups extending in parallel and arranged in parallel are disposed between the first pole and the second electrode, and are reddish. At least each of the second electrode and the photoelectric conversion portion has a strip exposing the surface of the first electrode: γ In the thin film solar cell module, both ends of the light are connected to each other in the x direction. X direction of the job change layer Dong servant ί" 4 solar energy ray group towel, the first electrode is transparent conductive tin Li transparent conductive oxide layer material includes zinc oxide, tin dioxide, indium tin oxide or indium oxide. In the above-mentioned bonded solar cell module, the photoelectric conversion layer is a single-layer junction 9 P63960016TW 26235 twf.doc/d structure or a stacked layer structure, and the constituent material of the # + type semiconductor and the intrinsic semiconductor material layer is p. Body or ^ semiconductor material. In the above-mentioned thin film solar cell model, the crystallization mode is non-defective. The conversion material layer is included in the above-mentioned thin 臈 sun heart two early; =. Metal and transparent _ final Μ / — = metal layer or copper, indium or its alloy, and phase electronuclear material including H tin, oxidized steel tin or indium oxide. 〃, 匕 & 、, - Oxidation The thin film solar cell module of the present invention has a gamma-direction opening in the form of a private electrode, and therefore, the electric-connecting substrate (four)-electrode (transparent electrode) of the present invention performs each _new detection. In the two-x=:, in the membrane solar cell module, since the material portions in the photoelectric γ direction are connected to each other in the direction of the ¥, the two-electrode and the photoelectric conversion layer of the Y-direction opening material exposed to the ancient pole are at the end portions. In addition, a barrier layer can be formed to block moisture and oxygen. Since the thin film solar cell module of the present invention can be achieved only by a slight change to the slashing blade, the existing smear film can be used. The process of solar cells is easy to manufacture and hardly increases the advantages. The above and other objects, features and advantages of the present invention will become more apparent < [Embodiment] FIG. 1 to FIG. 6 are schematic flow diagrams showing a method for fabricating a film too 1356501 P63960016TW 26235twf.d〇c/d according to an embodiment of the invention. Among them, the rhyme upper view of the H to the figure, the sub__ the sub-picture of the "face not thinking" along the section line (-Γ (0 is shown along the hatching chart. The sub is shown along the section line to buy π, (four) : The thin film solar cell of the embodiment of the present invention has an amount of g, == 101. The thin film solar cell mold direction = and the first electrode electroconversion layer H) 6a disposed thereon. Among them, the first Remy ship; The ^1 pole 8G is directly disposed on the substrate 102. The example is a transparent electrode, which is formed above the π, 1 and consists of a plurality of second strip electrodes extending along the χ direction of the iru. In addition, the light t (four) pole test is a material dance mode configuration. The conversion layer is arranged in the first electrode _ and the second electrode-shaped photoelectric conversion 四 (four) lake in the majority of the strip, please continue to refer to Figure 6, as shown in Figure 6 (4) As shown in Fig. 6(d), I, the electrode 108a, and the X-square θ' and the = port 4 in the photoelectric conversion layer i〇6a each have a strip exposed to the first electrode 丨〇: surface 108 108c Further, as shown in Fig. 6(c), both end portions of the photoelectric conversion layer 1〇6 and 2 are connected to each other in the Y direction. 3See Fig. 6(d) 'Because of this fact For example, the thin film solar power - the γ-direction opening 108c on the surface of the first electrode 104a, and the 11 1356501 P63960016TW 26235 twf.doc/d can be electrically connected to the first electrode a (transparent electrode) as will be described later. Since both ends of the photoelectric conversion layer 1G6^X direction are, ^ - exposing the first electrode 1 〇 4 the direction opening 108c, the electrode (10) a and the photoelectric conversion layer are applied to the last two ends of the opposite direction to form a barrier layer' Thereby, the entry of moisture and oxygen can be blocked. The manufacturing method of the thin film solar cell module 00 of the present embodiment will be described in detail with reference to Figs.
首先，制時參照圖1(a)與圖1(b)，提供基板搬。 二令此基板102㈣質例如是玻璃或其他的透明材質。接 著，在基板1〇2上形成第一電極材料層1〇4。第一電極 料層104例如是透明導電氧化物(transparent conductive oxide ’ TCO)薄膜’其材質例如是氧化辞(Zn〇)、二氧化錫 (Sn〇2)、氧化銦錫(indium tin收丨如，IT〇)或氧化銦(^2〇3)。 第—電極材料層刚的形成方法例如是可利用化學氣相沈 積法(CVDmethod)、濺鍍法(sputtering meth〇d)或其他方法First, the substrate transfer is provided with reference to Fig. 1 (a) and Fig. 1 (b). Second, the substrate 102 (four) is made of glass or other transparent material. Next, a first electrode material layer 1〇4 is formed on the substrate 1〇2. The first electrode material layer 104 is, for example, a transparent conductive oxide (TCO) film, and its material is, for example, oxidized (Zn〇), tin dioxide (Sn〇2), indium tin oxide (indium tin). , IT〇) or indium oxide (^2〇3). The method of forming the first electrode material layer may be, for example, a CVD method, a sputtering method, or other methods.
來製備。 然後，請同時參照圖2⑷與圖2(b)，在第一電極材料 f 中，形成可將第一電極材料層1〇4分隔成多數條第 —帶狀電極104a且相互平行的多數條第一 χ方向開口 l〇4b。其中X方向開口 1〇4b的形成方法例如是利用雷 射切割(laser scribing)製程來移除部分第一電極材料層1〇4 而形成。 ,接著，請同時參照圖3(a)與圖3(b)，在基板1〇2上方 形成一層光電轉換材料層。此光電轉換材料層1〇6會 12 1356501 P63960016TW 26235twf.doc/d 覆蓋住基板102與第—帶狀電極 以是單層結構或堆疊層結構。光電轉換 材料例如是p辭導體、本f :是 :成方法例如是可利用化學氣相沈積法=:=: 之後’請同時參照目4(a)、圖4(b)與圖4⑷ 分光電轉換材料層1〇6，於第一帶肤雷搞 ° y 帶狀電極104a上方形成平 ^6h 眺的多數條第二X方向開口 = 方向開口 _將光電轉換材料層106 刀1^成夕數條帶狀光電轉換材料層1G6a。而且，上 成的第二X方向開口祕的長度短於第— 刚b的長度，以使得所形成的光電轉換層i嶋的=x 方向的兩端於Y方向互相連接。上述第二χ方向開口雖 的形成方法，例如是利用雷射切割製程移 材料層106而形成。 轉換 繼之’請同時參照圖5⑷、圖5(b)與圖$⑹在基板 102上方形成-層第二電極材料層⑽。此第二電極材料層 108例如是金屬層，其會覆蓋住光電轉換層1〇如、第一帶 狀電極104a與基板102。第二電極材料層1〇8例如是金屬 層或金屬與透明電極組合而成的電極，其金屬層材質例如 是鋁(A1)、銀(Ag)、鉬(Mo)、銅(Cu)或其他適合的金屬或合 金’而透明電極其材質例如是氧化鋅(Zn〇)、二氧化: 13 1356501To prepare. Then, referring to FIG. 2 (4) and FIG. 2 (b), in the first electrode material f, a plurality of strips which can separate the first electrode material layer 1〇4 into a plurality of strip-shaped strip electrodes 104a and are parallel to each other are formed. One direction opening l〇4b. The formation method of the X-direction opening 1〇4b is formed, for example, by removing a portion of the first electrode material layer 1〇4 by a laser scribing process. Next, referring to FIG. 3(a) and FIG. 3(b), a layer of a photoelectric conversion material is formed over the substrate 1A2. The photoelectric conversion material layer 1〇6 12 13356501 P63960016TW 26235twf.doc/d covers the substrate 102 and the strip-shaped electrode to be a single-layer structure or a stacked layer structure. The photoelectric conversion material is, for example, a p-conductor, and the present f: is a method for forming, for example, a chemical vapor deposition method =:=: After 'Please refer to both the target 4 (a), FIG. 4 (b) and FIG. 4 (4) The conversion material layer 1〇6 forms a plurality of strips in the first X-ray layer 104a above the first strip-shaped electrode 104a. The second X-direction opening = the direction opening_the photoelectric conversion material layer 106 Strip-shaped photoelectric conversion material layer 1G6a. Further, the length of the formed second X-direction opening secret is shorter than the length of the first-brightness b such that both ends of the formed photoelectric conversion layer i in the =x direction are connected to each other in the Y direction. The method of forming the second turn direction opening is formed, for example, by using a laser cutting process to move the material layer 106. Conversion Next, please simultaneously form a layer of the second electrode material layer (10) over the substrate 102 with reference to Figs. 5(4), 5(b) and Fig.(6). This second electrode material layer 108 is, for example, a metal layer which covers the photoelectric conversion layer 1 such as the first strip electrode 104a and the substrate 102. The second electrode material layer 1 8 is, for example, a metal layer or an electrode in which a metal and a transparent electrode are combined, and the metal layer material is, for example, aluminum (A1), silver (Ag), molybdenum (Mo), copper (Cu), or the like. A suitable metal or alloy' and the transparent electrode is made of, for example, zinc oxide (Zn〇), dioxide: 13 1356501
P63960016TW 26235twf.doc/d f n〇2)、氧化銦錫(indium dn 〇xide，汀〇)或氧化銦出^〇3)。 第二電極材料層108的形成方法例如是可利用化學氣相沈 積法、淹鐘法或其他的方法來製備。 隨後’請參照圖6⑷、圖6(b)、圖6(c)與圖6⑷，於 二數條第二X方向開σ 1G8b，以使第二電極材料層⑽ 、為多數條帶狀電極職’並於電極材料層⑽與光電轉 換層106a中的X方向的兩端部附近，沿γ方向移除部分 ，極材料層⑽與特光電職層觸a，以少於兩端部 各形成-條曝露出第-帶狀電極刚a表面的丫方向開口 =。其中’第三χ方向開口腿是藉由移除部分第二 ，極材料層1G8,直至曝露出光電轉換層驗表面而形 Ϊ。在另厂實例中，如圖6(b，)以及圖6(c，)所示，開口腿 '、可以藉由移除。P分第二電極材料層⑽以及部份光電轉 換層腕，直至曝露出第_帶狀電極刚&表面而形成。 ^於y方向開口 1账’則是藉由沿γ方向移除第三χ方 °兩附近的#分第二電極材料層1〇8以及部份光電轉 3 直至曝露出第—帶狀電極购表面而形成。 冋樣地’第二X方向開口刚方向開口账可以利 用雷射切割製程以形成。在進行上面的各個步驟之後，即 可完成本實施例的薄膜太陽能電池模組100。 雷、上上二圖圖6的製程可知’本發明的薄膜太陽能 電池模組僅措由對雷射切程做些許的魏即可達成， 因此能夠沿用現有的薄膜太陽能電池的製程，不需導入額 1356501 p63960〇i6xw 26235twf.doc/d 外的新製程技術與機台。 圖7所示為對本發明的薄膜太陽能電池模組 ^的示意@，其巾子圖⑷是繪示上視示意圖， =示沿線m身的舶示意圖。當於生產線上 ^。至圖6的製程以製造出薄膜太陽能電池模組⑽之 可^於生產線上進行薄膜太陽能電池模組削的電性 ^測。W時參照圖7(a)與圖7(b)，將 一電極104a接觸，並將探針⑴與Γ 螭開口職中的第—電極104a接觸 一個電池101中的與基板搬連接了以里測出在 分佈情況。料。_ 阻值 針U2則電性連接探針 ^ f接正極或負極，探 新- 對應之電極’以進行量測。 :)=測::意圖，其中子圖㈣ 面產=的， 8(b)，將探針114盘開Τ %同時參照® 8⑷與圖 個電池101中的第職接觸’错此可以量測出在〜 阻值。其t。_針極偷的接面電 則電性連麵針m㈣或負極，探針116 本發明的薄膜太’3^行量測。 圖8的量測方法對=:b，池模M刚在經由上述圖7、 檢測之後，可以在也模組觸整體進行· 在1鞋t檢測出第一電極的阻值均勻性、 15 1JJ0JU1 P639600J6TW 26235twf.doc/d 電阻】=分佈航以及第1極與第二電極的接面 t具：：:第—電極的電特性，並能夠藉此檢測出其 行的除錯製程:二:=:的電池則能夠藉由接續進 成有 本發明可對薄膜太陽At σ c因此 者，在本發明的薄膜太陽能電池模組卿中，由於 =換層购的X方向的兩端部於γ方向互:連:於 ，路出第-電極刚㈣γ方向開口職 H光電轉^ l〇6^X方向的最末兩端部分卿成 阻擋層，此夠阻擋水氣與氧氣的進入 製程模組⑽僅藉崎雷射切割 陽^；成’因此能夠沿用現有的薄膜太 loo^dt從而使得本發㈣肋太陽能電池模組 有谷易衣&，幾乎不會增加製造成本等優點。 外’本發明的薄膜太陽能電池模組剛所形成 方向開口職，能夠再襄填隔絕材料作為水氣與氧氣 隔'，、邑材料的固定位置，以利於後續封裝的進行。 =本發明已以較佳實施例揭露如上，然其並非用以 二心明丄任何熟習此技藝者’在不脫離本發明的精神 範可作些許的更動與潤飾，因此本發明的保護 摩巳圍备視後附的申請專利範圍所界定者為準。 16 P63960016TW 26235twf.doc/d 【圖式簡單說明】 圖1至圖6所示為依照本發明的一實施例所繪示的薄 =陽能電域_製造方法的絲衫圖。其中，圖1 ;^的子圖⑷κ繪不上視示意圖，子圖⑼是繪示沿剔面 _」的〇丨]面不思圖，子圖（c)是繪示沿剖面線ΙΙ-ΙΓ的剖面 丁 圖’子B⑹是繪示沿剖面線ΠΙ_ΙΠ，㈣面示意圖。 檢別H對本發明的薄膜太陽能電池模組進行一種電性 =的^圖。其中，子圖⑻是繪示上視 讀不沿剖面線m柳的剖面示意圖。 圖8树本發日月_膜太陽 J檢測的示意圖。其中，子圖(輪 (r)是繪示沿剖面線ΠΙ-ΙΙΙ，的剖面示意圖。〜圖’子圖 【主要元件符號說明】 100:薄膜太陽能電池模組 ιοί :電池 102 :基板 104 :第—電極材料層 104a .第一電極 104b :第—X方向開口 106 .光電轉換材料層 106a:光電轉換層 106b .第二X方向開口 ⑽·第二電極材料層 108a :第二電極 17 1356501 P63960016TW 26235twf.doc/d 108b :第三X方向開口 108c : Y方向開口 110、112、114、116 :探針P63960016TW 26235twf.doc/d f n〇2), indium dn idexide (tin) or indium oxide (3). The method of forming the second electrode material layer 108 can be prepared, for example, by a chemical vapor deposition method, a flooding method, or the like. Then, please refer to FIG. 6 (4), FIG. 6 (b), FIG. 6 (c) and FIG. 6 (4), and open σ 1G8b in the second X direction, so that the second electrode material layer (10) is a majority strip electrode. And in the vicinity of both end portions of the electrode material layer (10) and the photoelectric conversion layer 106a in the X direction, the portion is removed in the γ direction, and the pole material layer (10) and the special photoelectric layer touch a, forming less than the both ends - The strip exposes the opening direction of the surface of the first strip electrode just a. Wherein the 'third third direction opening leg is formed by removing a portion of the second, pole material layer 1G8 until the surface of the photoelectric conversion layer is exposed. In another example, as shown in Figures 6(b,) and 6(c), the open leg ' can be removed. P is divided into a second electrode material layer (10) and a portion of the photoelectric conversion layer wrist until a surface of the first strip electrode is exposed. ^In the y direction opening 1 account 'by removing the third electrode material layer 1 〇 8 near the third χ ° ° in the γ direction and part of the photoelectric conversion 3 until the exposure of the first strip electrode purchase Formed on the surface. The second X-direction opening straight-direction opening account can be formed by a laser cutting process. After performing the above respective steps, the thin film solar cell module 100 of the present embodiment can be completed. Lei, above, the process of Figure 6 shows that the thin film solar cell module of the present invention can be achieved only by making a slight amount of laser cutting, so that the existing thin film solar cell process can be used without importing. New process technology and machine for the amount of 1356501 p63960〇i6xw 26235twf.doc/d. Fig. 7 is a schematic view of the thin film solar cell module of the present invention, wherein the towel diagram (4) is a schematic view of the top view, and the schematic diagram of the ship along the line m is shown. When on the production line ^. The process of Fig. 6 is used to fabricate a thin film solar cell module (10) for electrical measurement of thin film solar cell modules on a production line. Referring to FIG. 7(a) and FIG. 7(b), an electrode 104a is brought into contact, and the probe (1) is brought into contact with the first electrode 104a of the opening position of the opening, and the substrate 101 is connected to the substrate. Measure the distribution. material. _ Resistance Pin U2 is electrically connected to the probe ^ f to the positive or negative electrode, and the new - corresponding electrode ' is measured. :)=Measure:: Intent, where subgraph (4) Face production =, 8(b), probe 114 is opened Τ % while referring to ® 8(4) and the first contact in the battery 101 is wrong. Out at ~ resistance. Its t. _ 极 偷 的 则 则 则 则 则 则 则 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 m m m m m 探针 探针The measurement method of Fig. 8 is =: b, the pool mode M is just after the detection through the above-mentioned Fig. 7, and the module can be touched as a whole. The uniformity of the resistance of the first electrode is detected at 1 shoe t, 15 1JJ0JU1 P639600J6TW 26235twf.doc/d Resistor】=Distribution and the junction of the 1st and 2nd electrodes have::: the electrical characteristics of the first electrode, and can be used to detect the faulty process of the line: 2:= The battery of the present invention can be made into a film solar At σ c by the present invention. Therefore, in the thin film solar cell module of the present invention, both ends of the X direction in the γ direction are purchased in the γ direction. Mutual: Connected to: the first electrode of the road-electrode (4) γ-direction opening H photoelectric switch ^ l〇6 ^ X direction of the last two parts of the Qing into a barrier layer, this is enough to block the entry of water and oxygen into the process module (10) It is only possible to use the existing laser to cut the yang ^; The thin film solar cell module of the present invention has just opened its direction, and can further fill the insulating material as a water vapor and oxygen barrier, and a fixed position of the crucible material, so as to facilitate subsequent packaging. The present invention has been disclosed in the above preferred embodiments, but it is not intended to be used by those skilled in the art to make modifications and refinements without departing from the spirit of the invention. The scope of the patent application as defined in the attached patent shall prevail. 16 P63960016TW 26235twf.doc/d [Simplified Schematic] FIG. 1 to FIG. 6 are diagrams showing a thin-panel electric field_manufacturing method according to an embodiment of the present invention. Among them, the subgraph of Fig. 1; ^ (4) κ is not shown in the schematic view, the subgraph (9) is the 〇丨 面 沿 沿 沿 , , , , , , , , , , , , , , , , , , , , , , , , , , , , ΙΓ The section D-Fig. 'B(6) is a schematic diagram showing the ΠΙ_ΙΠ, (4) plane along the section line. Checking H performs an electrical conductivity diagram of the thin film solar cell module of the present invention. Among them, the sub-picture (8) is a schematic cross-sectional view showing that the upper view is not along the section line m. Fig. 8 Schematic diagram of the tree detection of the sun and the moon. Wherein, the subgraph (round (r) is a schematic cross-sectional view along the section line ΠΙ-ΙΙΙ. ~ Figure 'sub-picture [main component symbol description] 100: thin film solar cell module ιοί: battery 102: substrate 104: —Electrode material layer 104a. First electrode 104b: X-direction opening 106. Photoelectric conversion material layer 106a: Photoelectric conversion layer 106b. Second X-direction opening (10)·Second electrode material layer 108a: Second electrode 17 1356501 P63960016TW 26235twf .doc/d 108b: third X-direction opening 108c: Y-direction opening 110, 112, 114, 116: probe
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