TWI354678B

TWI354678B - Release layer materials, substrate structures comp

Info

Publication number: TWI354678B
Application number: TW98131014A
Authority: TW
Inventors: Hsueh Yi Liao; Chyi Ming Leu; Chun Wei Su
Original assignee: Ind Tech Res Inst
Priority date: 2009-09-15
Filing date: 2009-09-15
Publication date: 2011-12-21
Also published as: TW201109355A

Description

1354678 . ‘六、發明說明：【發明所屬之技術領域】本發明係有關於一種離型層材料，特別是有關於一種環稀共聚物離型層材料及包括該離型層之基板、纟士構。【先前技術】軟性顯示器已成為新世代新穎顯示器的發展趨勢，而發展主動式軟性顯示器更是主流趨勢，世界各大研發公司 • 均由現行厚重且易破碎的玻璃基板跨入非玻璃系且重量更輕的軟性塑耀基板材料發展’並朝向主動式全彩的Τρτ顯 . 示面板邁進。目前，針對開發主動式軟性顯示器的技術有 a-Si TFT、LPTS TFT及OTFT三種選擇，在顯示介質的部分包含 EPD、ECD、LCD 及 EL。在製造方式的選擇可以分成batch type及r〇u t〇 r〇ll 兩種方式，若選擇batch type方式進行TFT元件製造，可利用現有TFT設備進行製作，具有相當優勢，但必須發展 • 所謂基板轉移或離膜技術，將軟性顯示器從玻璃上轉移到其它塑膠基板上或取下。而以roll to roll方式則必須利用全新設備來進行，並必須克服轉動及接觸所引發的相關問題。以batch type方式進行製造TFT結構主要有三種方式，一為SEC利用PES當基板轉貼於矽晶片上，利用低溫 a-Si TFT 技術開發 7” VGA (640x480) plastic LCD，而此法需要一耐高溫、低熱膨脹係數、低光遲滯性且抗化性佳的高透明基板材料，並配合適當的膠材及良好的離型技術。 1354678 二為Seiko Epson以LPTS transfer技術進行TFT背板開發’於玻璃基板上進行LPTS TFT背板製作，完成後，Seiko Epson再利用雷射回火(laser annealing) °戶斤謂transfer技術主要優點為TFT元件製程溫度不受塑膠基板的限制，因此，有較好的特性，故一般具高透光性塑膠基板便可以被用來使用’但其transfer機制及轉貼技術顯得更加重要。另外’第三種為Philips利用聚亞酿胺(PI)塗佈於玻璃上，進行a-Si TFT-EPD顯示器的開發，並利用transfer技術將pi 基板於玻璃上取下。此技術雖然利用傳統Η塑膠基板而具有耐高溫的特性，直接塗佈於玻璃上，不但製程溫度可以超過300°C，又可以省去轉貼的步驟，但仍必須利用雷射去除玻璃基板。由於與軟性基板材料不匹配且熱阻低，因此，傳統離型層材料並不適合應用於TFT製程。【發明内容】本發明之一實施例’提供一種應用於軟性電子元件之環烯共聚物離型層材料，具有下列化學式(I)或(II): Η Η1354678 . '6. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to a release layer material, and more particularly to a ring-least copolymer release layer material and a substrate including the release layer, a gentleman Structure. [Prior Art] Soft displays have become the trend of new generations of new displays, and the development of active soft displays is the mainstream trend. The world's major R&D companies are all immersed in non-glass systems and weights from the current heavy and fragile glass substrates. The lighter softness of the substrate material development 'and towards the active full color Τρτ display. The panel is moving forward. At present, technologies for developing active flexible displays include a-Si TFT, LPTS TFT, and OTFT, and the parts of the display medium include EPD, ECD, LCD, and EL. The choice of manufacturing method can be divided into batch type and r〇ut〇r〇ll. If the batch type is selected for TFT device manufacturing, it can be fabricated by using existing TFT devices, which has considerable advantages, but must be developed. Or off-film technology, transfer the flexible display from the glass to other plastic substrates or remove. The roll to roll method must be carried out with new equipment and must overcome the problems caused by the rotation and contact. There are three main ways to manufacture TFT structures in batch type. One is SEC using PES to transfer the substrate onto the germanium wafer, and the 7” VGA (640x480) plastic LCD is developed using low temperature a-Si TFT technology. This method requires a high temperature resistance. High transparent substrate material with low thermal expansion coefficient, low light hysteresis and good chemical resistance, combined with appropriate rubber and good release technology. 1354678 Second, Seiko Epson develops TFT backplane with LPTS transfer technology The LPTS TFT backplane is fabricated on the substrate. After completion, Seiko Epson uses laser annealing. The main advantage of the transfer technology is that the TFT component process temperature is not limited by the plastic substrate. Therefore, there is a better Characteristics, so a generally high-transparency plastic substrate can be used to use 'but its transfer mechanism and transfer technology is more important. In addition, 'the third is for Philips to use poly-stylishamine (PI) coated on glass, Developed a-Si TFT-EPD display and removed the pi substrate on glass using transfer technology. This technology has high temperature resistance despite the use of traditional tantalum plastic substrates. The characteristics are directly coated on the glass, not only the process temperature can exceed 300 ° C, but also the step of re-posting can be omitted, but the glass substrate must be removed by laser. Due to the mismatch with the soft substrate material and low thermal resistance, The conventional release layer material is not suitable for application in a TFT process. SUMMARY OF THE INVENTION One embodiment of the present invention provides a cyclic olefin copolymer release layer material applied to a flexible electronic component, having the following chemical formula (I) or (II) : Η Η

(II)(II)

Y X為30〜70 ’ X+Y為100，r為氫、化學式(I)或(II)中，曱基或乙基。本發明之一者某板妗構 —μ %例，提供一種應用於軟性電子元件之 ^蓋載體；—離型層’以—第一面積 ^ ^戟體，形成一或複數個區塊，其中該離型層包、、、聚物，具有上述化學式⑴或（Π);以及一軟性基才反 ’ —' 裳—-7- - L Λ 一乐一面積覆盍該離型層與該支撐載體，其中該第 -面積切該第—面積且該軟性基板對該支撐載體之密著度大於該離型層對該支撐載體之密著度。本發明環烯共聚物離型層材料塗佈於支撐載體（例如玻璃基板)上，形成一或複數個區塊。之後，將軟性基板材料塗佈於離型層與支撐載體上，以形成一雙層基板結構，適合應用於軟性基板的分離。本發明之一實施例’提供一種應用於軟性電子元件之基板結構之製造方法，包括：提供一支撐载體；以一第一面積覆盖一離型層於該支撐載體上’形成一或複數個區塊，其中該離型層包括環烯共聚物，具有上述化學式⑴或 (II);以及以一第二面積覆蓋一軟性基板於該離型層與該支樓載體上’其中該第一面積大於該第一面積且該軟性基板 1354678 =支#制之密㈣大於_縣對該切聽之密著 =日歧供-種可藉由現有半導體設備製作的 ^生電子元件的基板結構，其利用兩種密著度的差显，先將宗荽谇又按载體 s 較差的離型層以較小面積成型於支#载體上，再將與切魏㈣度較佳的、 =:器基板)以較大面積覆蓋在較差密著度的上並與切制有翻。《財式製作的基板結構，可; 保其在TFT製程Μ會脫落，並在完絲程後，將外邊未含密著度較㈣型層的部分切除’即可輕易分離密著度較佳的離型層與支#載體。分離後，密著度較佳的離型層（例如軟性顯示器基板)仍可保持完整，不致損傷。為讓本發明之上述目的、特徵及優點能更明顯易懂，下文特舉一較佳實施例，並配合所附圖式，作詳細說明如下· 【實施方式】本發明之一實施例，提供一種應用於軟性電子元件之環烯共聚物離型層材料，具有下列化學式⑴或(11)。 -tCH2-CH2-4-4^g^__ (I) 1354678Y X is 30 to 70 ′ X + Y is 100, r is hydrogen, in the formula (I) or (II), fluorenyl or ethyl. One of the embodiments of the present invention provides a cover carrier for a flexible electronic component; the release layer has a first area or a plurality of blocks, wherein one or more blocks are formed. The release layer package, and the polymer have the above chemical formula (1) or (Π); and a soft base is opposite to the ''shang'-7'-L Λ yi yi area covering the release layer and the support The carrier, wherein the first area cuts the first area and the soft substrate has a degree of adhesion to the support carrier that is greater than the adhesion of the release layer to the support carrier. The cyclic olefin copolymer release layer material of the present invention is coated on a support carrier (e.g., a glass substrate) to form one or more blocks. Thereafter, a soft base material is applied to the release layer and the support carrier to form a two-layer substrate structure suitable for separation of the flexible substrate. An embodiment of the present invention provides a method for fabricating a substrate structure for a flexible electronic component, comprising: providing a support carrier; covering a release layer with a first area on the support carrier to form one or more a block, wherein the release layer comprises a cyclic olefin copolymer having the above chemical formula (1) or (II); and covering a soft substrate with a second area on the release layer and the support carrier, wherein the first area More than the first area and the flexible substrate 1354678 = the density of the support (four) is greater than the _ county of the occlusion of the = = 日日日可可可可可可可现有现有现有现有现有现有现有现有现有现有现有现有现有现有现有现有现有现有现有Using the difference of the two kinds of adhesion degree, the Zongyi is first formed on the support #carrier by a small area with a carrier layer of a poorer carrier s, and then the Wing (four) degree is better, =: The substrate is covered with a large area on a poor degree of adhesion and turned over with the cut. "The substrate structure made by the financial system can be used; it can be detached during the TFT process, and after the completion of the wire process, the outer portion is not more closely sealed than the portion of the (four) type layer can be easily separated. The release layer and the branch #carrier. After separation, the release layer (e.g., the flexible display substrate) with better adhesion can remain intact without damage. The above described objects, features and advantages of the present invention will become more apparent and understood. A cycloolefin copolymer release layer material applied to a flexible electronic component having the following chemical formula (1) or (11). -tCH2-CH2-4-4^g^__ (I) 1354678

γ (II) 化學式（I)或(II)中，X可為30〜70，Χ+Υ可為100，R 可為氫、曱基或乙基。 φ 為達製程均一性，上述離型層材料可溶於有機溶劑。請參閱第1圖，根據一實施例，說明本發明之一應用於軟性電子元件之基板結構。基板結構10包括一支撐載體 12、一離型層14以及一軟性基板16。離型層14以一第一面積A1覆蓋支撐載體12，形成一或複數個區塊(如第1A 圖所示）。離型層14包括環烯共聚物，具有上述化學式(I) 或（II) 〇軟性基板Ιό以一第二面積Λ2覆蓋離型層14與支撐載體12。值得注意的是，第二面積A2大於第一面積A1 • 且軟性基板16對支撐載體12的密著度大於離型層14對支撐載體12的密著度。本發明並未限定離型層區塊之大小、形狀及配置。支撐載體12可包括玻璃或矽晶圓。離型層14對支撐載體12的密著度為0B〜1B (百格刀密著度測試）。離型層14的固含量可為1〜20%。離型層14的厚度可為0.2〜20微米，較佳為0.5〜5微米。軟性基板16可為一軟性顯示器基板，例如一主動式軟性顯示器基板，其對支撐載體12的密著度為1〜5B(百格刀 1354678 达、者度測试）。軟性基板16可由例如聚亞酿胺(p〇iyimide， PI)、聚碳酸酯（polycarbonate, PC)、聚醚楓（p〇lyethersulfone, PES)、聚丙烯酸酯（polyacrylate, PA)、聚原冰烯 (polynorbornene，PNB)、聚乙烯對苯二曱酸酯（polyethylene terephthalate, PET)、·聚鍵驗嗣（polyetheretherketone, PEEK)、聚萘二曱酸乙二醇酉旨（polyethylene naphthalate, PEN)或聚醚亞醯胺(polyetherimide，PEI)的材料所構成。若軟性基板16為透明聚亞醯胺(PI)時，可具有下列化學式(III):γ (II) In the formula (I) or (II), X may be 30 to 70, Χ+Υ may be 100, and R may be hydrogen, fluorenyl or ethyl. φ is the process uniformity, and the above release layer material is soluble in an organic solvent. Referring to Fig. 1, a substrate structure of a soft electronic component according to one embodiment of the present invention will be described. The substrate structure 10 includes a support carrier 12, a release layer 14, and a flexible substrate 16. The release layer 14 covers the support carrier 12 with a first area A1 to form one or more blocks (as shown in Figure 1A). The release layer 14 comprises a cyclic olefin copolymer having a soft substrate of the above formula (I) or (II) and covering the release layer 14 and the support carrier 12 with a second area Λ2. It is to be noted that the second area A2 is larger than the first area A1 • and the adhesion of the flexible substrate 16 to the support carrier 12 is greater than the adhesion of the release layer 14 to the support carrier 12. The invention does not limit the size, shape and configuration of the release layer block. The support carrier 12 can include a glass or germanium wafer. The adhesion of the release layer 14 to the support carrier 12 is 0B to 1B (100-gauge adhesion test). The release layer 14 may have a solid content of 1 to 20%. The release layer 14 may have a thickness of 0.2 to 20 μm, preferably 0.5 to 5 μm. The flexible substrate 16 can be a flexible display substrate, such as an active flexible display substrate, which has a adhesion to the support carrier 12 of 1 to 5 B (100 knives 1354678, test). The flexible substrate 16 may be, for example, polypyramine (PI), polycarbonate (PC), polyether (PES), polyacrylate (PA), polyacrylene. (polynorbornene, PNB), polyethylene terephthalate (PET), polyetheretherketone (PEEK), polyethylene naphthalate (PEN) or poly It is composed of a material of polyetherimide (PEI). If the flexible substrate 16 is a transparent polyiminamide (PI), it may have the following chemical formula (III):

，X與Y可為氫、曱基、三氟曱基、羥基、-OR (R可為碳數的烷基）、漠、氯或埃，Z 可為-0-、-CH2-、-C(CH3)2-、-S〇2-、-Αγ·〇-Αγ-、 -Ar-CH^-Ar-、-Ar，C(CH3)2_Ar·或-Ar-S〇2_Ar- (Ar 可為本包括口、Ω、, X and Y may be hydrogen, fluorenyl, trifluoromethyl, hydroxy, -OR (R may be a carbon number alkyl), desert, chlorine or angstrom, Z may be -0-, -CH2-, -C (CH3)2-, -S〇2-, -Αγ·〇-Αγ-, -Ar-CH^-Ar-, -Ar,C(CH3)2_Ar· or -Ar-S〇2_Ar- (Ar can be This includes mouth, Ω,

環）。Β可 1354678 或0"2%〇，乂與y可為 & -c(ch3)2〜s〇2-、-Ar_〇_Ar_、、、H ^ z 可為-ο-、媽-、或如8。2*· (Ar可為麵）。_广聊3)2善 ^ η 了為大於1的整數。軟! 生基板16中更可添加矽氧烧化合增加軟性基板16對支撐载體12的密著^―乳化石夕本發明環烯共聚物離型層材料塗又玻璃基板)上，形成-或複數個區塊。之$支f載體（例如料塗佈於離型層與支撐載體上，二2性基板材適合應用於軟性基板的分離。’ 日土板結構’ 第2A〜2D圖係說明本發明之一每性料元件基板結構之製造方法。以例…種應用於軟 14的=目’首先’提供1上塗佈有—離型層牙载體12。離型層Μ塗佈於支或複數個區塊(如第1A圖所示）。塗载體12 ^形成一 A1。離型層14包括環烯共聚物，具有上述積本發^未限定離型層區塊之大小、形狀及酉于己置/ 者’睛參_2心，以例如塗佈的方式覆蓋一軟性型層14與支撐載體12上。軟性基板16覆蓋禮载體12的面積為1二面積A2。值得注二二¥—面積A2A於第―面積A1且軟性基板16對 =载體12的密著度大於離型層㈣切載體12的密著度。 Μ ’請參閱第2C® ’以_層14的兩端點為切除 1354678 =，c，）’⑽料軟轉板16與切龍i2，以分離離曰14、軟性基板16與支擇載體12，如帛2〇圖所示。本發明提供—種可藉由現有半導體設備製作的摩用於軟性電子兀件的基板結構，其__ 體 =度的差異’先將密著度較差的離型層以較:丨:= =榜載體上’再將與支撑㈣密著度較佳的離型層（例如 f顯不器基板）讀大面積覆蓋在較差密著度的離❹ 亚與支樓紐有接觸。以此方式製作的基板結構，可確保其在TFT製程林會脫落，並在完成製程後，將外邊未含密著度較差離型層的部分切除，即可輕易分離密著度較佳的離型層與支㈣體。分雜，密著度較佳的離型層（例如軟性顯示器基板)仍可保持完整，不致損傷。【實施例】本發明的實施方法為先將TFT用的玻琅^ Uem*l5cm)進行離型層的製作，其中可利用大小不同的中二塾片來控制離型層的面積（如8cm*8cm)，再將基板材料鲁以大於離型層面積（如l〇cm*i〇Cin)成型於含有離型層的玻璃上便形成一可用於製造軟性電子元件之基板結構，再以此結構進行軟性電子元件的所有製程後，可以輕易以切割方式沿離型層兩端或其内側劃斷部分基板與離型層，便^ 將軟性電子元件於玻璃上分離。【實施例1】聚亞醯胺 Β1317-ΒΑΡΡΠ1 (BB)/Topas (X=5〇, 1==50)/破 1354678 . • « 璃基板結構之製作首先，製備不同固含量（1%、3%、6%、7。/〇、8%)的Topas 溶液。之後，塗佈上述ToPas溶液於不同玻璃支撐載體，以形成濕Topas膜。濕Topas膜的厚度分別為30μιη、60μιη、 90μιη、120μιη。待以50°C烘烤5分鐘及300°C烘烤1小時後，塗佈一聚亞醯胺基板材料(含1%助黏劑）於Topas膜。再次烘烤後，進行離型測試’結果如表一所示。表一ring). Β可1354678 or 0"2%〇, 乂 and y can be & -c(ch3)2~s〇2-, -Ar_〇_Ar_,,, H ^ z can be -ο-, mom-, Or as 8. 2*· (Ar can be a face). _ 广聊3) 2 good ^ η is an integer greater than 1. The soft substrate can be added to the green substrate 16 to increase the adhesion of the flexible substrate 16 to the support carrier 12, and the cycloolefin copolymer release layer material is coated on the glass substrate to form - or Multiple blocks. The support carrier (for example, the material is coated on the release layer and the support carrier, and the two-base substrate is suitable for the separation of the flexible substrate. 'The soil plate structure' 2A to 2D diagrams illustrate one of the present inventions. A method for manufacturing a substrate structure of a material element. By way of example, a material applied to a soft 14 is first provided with a release-coated layer carrier 12. The release layer is coated on a branch or a plurality of regions. a block (as shown in Fig. 1A). The coated carrier 12^ forms an A1. The release layer 14 comprises a cyclic olefin copolymer having the size, shape and shape of the above-mentioned unrestricted release layer block. The surface of the flexible substrate 14 and the support carrier 12 is covered by, for example, coating. The area of the flexible substrate 16 covering the gift carrier 12 is 12 area A2. It is worth noting that The area A2A is at the first area A1 and the soft substrate 16 pair = the carrier 12 is more dense than the release layer (four) the carrier 12. The Μ 'see the 2C® 'with the _ layer 14 at both ends Cut 1354678 =, c,) '(10) material soft plate 16 and cut dragon i2 to separate the weir 14, the flexible substrate 16 and the support carrier 12, as shown in Figure 2 . The invention provides a substrate structure which can be fabricated by using a conventional semiconductor device and used for a soft electronic component, and the difference of the body_degree is first to compare the release layer with poor adhesion to: 丨:== On the list carrier, the release layer (such as the f-display substrate) with better adhesion is supported by a large area covering the poor adhesion and the contact with the branch. The substrate structure produced in this way can ensure that it will fall off in the TFT process forest, and after the completion of the process, the portion of the outer layer which is not covered with a poor adhesion layer can be easily removed, and the adhesion degree can be easily separated. Type layer and branch (four) body. The release layer, which is well-mixed, and has a good adhesion, such as a flexible display substrate, can remain intact without damage. [Examples] The method of the present invention is to first fabricate a release layer for a TFT for a TFT, wherein a medium-sized bismuth sheet having a different size can be used to control the area of the release layer (for example, 8 cm*). 8cm), the substrate material is formed on the glass containing the release layer by forming a larger than the release layer area (such as l〇cm*i〇Cin) to form a substrate structure for manufacturing flexible electronic components, and then the structure is After all the processes of the flexible electronic component are performed, a part of the substrate and the release layer can be easily cut along both ends of the release layer or the inside thereof, and the soft electronic component can be separated on the glass. [Example 1] Polyamidoguanidine 1317-ΒΑΡΡΠ1 (BB)/Topas (X=5〇, 1==50)/break 1354678. • «Manufacture of glass substrate structure First, prepare different solid contents (1%, 3 %, 6%, 7. (〇, 8%) of Topas solution. Thereafter, the above ToPas solution was applied to different glass support supports to form a wet Topas film. The thickness of the wet Topas film was 30 μm, 60 μm, 90 μm, and 120 μm, respectively. After baking at 50 ° C for 5 minutes and baking at 300 ° C for 1 hour, a polyimide substrate material (containing 1% adhesion promoter) was applied to the Topas film. After baking again, the release test was performed. The results are shown in Table 1. Table I

Topas固含量是否完全溶解對玻璃支撐載體之密著度聚亞醯胺基板之離型情況 1% Yes 0B 完整取下，無破損 3% Yes 0B 完整取下，無破損 6% Yes 0B 完整取下，無破損 7% Yes 0B 完整取下，無破損 8% No, 形成膠體 - - 【實施例2】聚亞醯胺 B1317-BAPPm (BB)/Arton (X=50，Y=50, 1354678 R=H)/玻璃基板結構之製作首先’製備不同固含量(5%、10%、15〇/〇、2〇0/〇、25%) 的Arton浴液。之後，塗佈上述Arton溶液於不同玻璃支樓載體’以形成濕Arton膜。濕Arton膜的厚度分別為Topas solid content is completely dissolved. The adhesion of the glass support carrier is 1% of the release of the polyimide substrate. Yes 0B Completely removed, no damage 3% Yes 0B Completely removed, no damage 6% Yes 0B Completely removed , No breakage 7% Yes 0B Completely removed, no damage 8% No, forming a colloid - - [Example 2] Polybendamine B1317-BAPPm (BB)/Arton (X=50, Y=50, 1354678 R= H)/Production of Glass Substrate Structure First, Arton baths with different solid contents (5%, 10%, 15 Å/〇, 2 〇0/〇, 25%) were prepared. Thereafter, the above Arton solution was applied to different glass building supports ' to form a wet Arton film. The thickness of the wet Arton film is

30μιη、60μιη、90μιη、120μιη。待以 50°C 烘烤 5 分鐘及 300oC 烘烤1小時後，塗佈一聚亞醯胺基板材料（含1%助黏劑)於 Arton膜。再次烘烤後，進行離型測試，結果如表二所示。30 μm, 60 μm, 90 μm, 120 μm. After baking at 50 ° C for 5 minutes and baking at 300 ° C for 1 hour, a polyimide substrate material (containing 1% adhesion promoter) was applied to the Arton film. After baking again, the release test was carried out, and the results are shown in Table 2.

Arton固含量是否完全溶解對玻璃支撐载體之密t廢聚亞醯胺基板之離型情況完整取下，無破損Is the solid content of Arton completely dissolved? The release form of the densely-charged polyamidamide substrate of the glass support carrier is completely removed without damage.

完整取下 5% Yes OB 10% Yes OB 15% Yes OB 20% Yes OB 25% No, 形成膠體 - 無破損 -------- 完整取下，無破損【實施例3】聚對二甲苯(parylene)離型層之製作 1354678 將聚對二曱苯之前趨物(parylene dimer)放入熱蒸鍍設備中’並將預先洗淨的玻璃（15cm*l5cm)放入樣品室，利用中空（8cm*8cm)的墊片覆蓋於玻璃上，抽真空後加熱至 15〇°C使聚對二曱笨之前驅物汽化，再加熱至650〇c，使其裂解便打開筏門使其通往樣品室，於室溫下聚合沈積於沒有被墊片覆蓋的玻璃區域，形成一 8cm*8cm的離型膜。【實施例4】Completely remove 5% Yes OB 10% Yes OB 15% Yes OB 20% Yes OB 25% No, form colloid - no damage ------- complete removal, no damage [Example 3] Poly 2 Preparation of parylene release layer 1354678 Put the parylene dimer into the thermal evaporation equipment' and put the pre-washed glass (15cm*l5cm) into the sample chamber, using hollow The gasket (8cm*8cm) is covered on the glass. After vacuuming, it is heated to 15 °C to vaporize the front of the polypyrene, and then heated to 650 〇c, so that it will open and open the door. The sample chamber was polymerized and deposited at room temperature on a glass region not covered by the spacer to form an 8 cm*8 cm release film. [Embodiment 4]

Arton、Topas、Zeonor離型層之製作將Arton、Topas、Zeonor分別以固含量10%溶於曱笨中’以刮刀方式塗佈於玻璃上，放入烘箱於8〇〇C及i5〇0c 下各烘烤0·5小時’以形成一 8cm*8cm的離型膜。【實施例5】聚亞醯胺B1317_BAPPm (BBVparylene/玻璃基板結構之製作The production of Arton, Topas and Zeonor release layer was applied to the glass by the scraper method of Arton, Topas and Zeonor in a solid content of 10%, and placed in an oven at 8 ° C and i5 〇 0c. Each baking was carried out for 0.5 hours to form a release film of 8 cm * 8 cm. [Example 5] Production of polybendamine B1317_BAPPm (BBVparylene/glass substrate structure)

~0'ο'^ΜηΟ~°-〇·ν：首先’在室溫下’使用三頸瓶通以氮氣，將0 0147莫耳的BAPPm 一笨胺溶入32.94克的曱紛(cresol)溶劑中。待 BAPPm完全溶解後’將〇〇15莫耳的B1317雙酸酐加入，直至B1317完全溶解，續攪拌丨小時，以形成黏稠狀聚醯 1354678 胺酸溶液。之後，加熱至攝氏220度，進行3小時的亞醯胺化反應，反應過程中同時使用除水裝置將水排除。最後，將反應液滴入曱醇中使聚亞酿胺沉澱，於真空烘箱中烘乾 12小時。烘乾後，將聚亞醯胺以固含量20%溶解於DMAc 中，形成聚亞醯胺溶液。再將聚亞醯胺溶液以刮刀方式以面積10cm*10cm塗佈於鍍有8cm*8cm聚對二曱苯(paryiene) 的玻璃上，並放入烘箱於80°C及150°C下各烘烤1小時，即可獲得包含聚亞醯胺(BB)的基板結構。【實施例6】二氧化矽/聚亞酿胺 B1317-BAPPm (Si02/BB37)/parylene/玻璃基板結構之製作首先’在室溫下，將3克以固含量20%溶於DMAc的二氧化矽（SiOO與7克以固含量20%溶於DMAc的 B1317-BAPPm (BB)放入樣品航中。接著，加入〇 3克的含胺基石夕氧烧’於室溫下搜拌30分鐘。之後，以到刀方式塗佈於鍍有聚對二曱苯(parylene)的玻璃上’並放入烘箱於 # 80°C及150°C下各烘烤1小時，即可獲得包含二氧化矽/ 聚亞醯胺B1317-BAPPm (Si(VBB37)的基板結構。【實施例7】二氧化梦/聚亞醯胺 B1317-BAPPm (Si02/BB55)/parylene/玻璃基板結構之製作首先，在室溫下’將5克以固含量20%溶於DMAc的二氧化矽（Si〇2)與5克以固含量20%溶於DMAc的~0'ο'^ΜηΟ~°-〇·ν: First, at room temperature, use a three-necked flask with nitrogen to dissolve 0 0147 mol of BAPPm monoamine into 32.94 g of cresol solvent. in. After BAPPm is completely dissolved, add 15 moles of B1317 bis-anhydride until B1317 is completely dissolved and continue to stir for a few hours to form a viscous polyglycol 1354678 amine acid solution. Thereafter, the mixture was heated to 220 ° C for 3 hours of the amidoximation reaction, and the water was removed simultaneously using a water removal device during the reaction. Finally, the reaction was dropped into methanol to precipitate the poly-branched amine and dried in a vacuum oven for 12 hours. After drying, the polymethyleneamine was dissolved in DMAc at a solid content of 20% to form a polymethyleneamine solution. The polyamine reaction solution was applied to a glass plated with 8 cm*8 cm paryiene in a doctor blade manner at an area of 10 cm*10 cm, and placed in an oven at 80 ° C and 150 ° C for drying. After baking for 1 hour, a substrate structure containing polyamine (BB) can be obtained. [Example 6] Preparation of cerium oxide/polystyryl B1317-BAPPm (Si02/BB37)/parylene/glass substrate structure First, 3 gram of 20% solid content dissolved in DMAc was dissolved at room temperature.矽 (SiOO and 7 g of B1317-BAPPm (BB) dissolved in DMAc at a solid content of 20% were placed in the sample. Then, 〇3 g of the amine-containing alkaloids were added for 30 minutes at room temperature. Thereafter, it is applied to a glass plated with parylene by a knife method and baked in an oven at #80 ° C and 150 ° C for 1 hour to obtain a cerium oxide. / Substrate structure of polybendamine B1317-BAPPm (Si (VBB37). [Example 7] Production of Dioxide Dream/Polyimide B1317-BAPPm (Si02/BB55)/parylene/glass substrate structure First, in the room Under temperature, 5 grams of cerium oxide (Si〇2) dissolved in DMAc with a solid content of 20% and 5 grams of TiOc dissolved in 20% solid content

16 1354678 . B13l7-BAPPm(BB)放入樣品瓶中。接著，加入0.2克的含胺基石夕氧烷，於室溫下攪拌30分鐘。之後，以刮刀方式塗佈於鍍有聚對二曱苯(parylene)的玻璃上，並放入供箱於 8〇°C及15〇°C下各烘烤1小時，即可獲得包含二氧化石夕/ 聚亞醯胺B1317-BAPPm (Si02/BB55)的基板結構。【實施例8】二氧化矽/聚亞醢胺 B1317-BAPPm ® (Si〇2/BB73)/parylene/玻璃基板結構之製作首先，在室溫下，將7克以固含量20%溶於DMAc的一氧化石夕（Si〇2)與3克以固含量20%溶於DMAc的 B1317-BAPPm (BB)放入樣品瓶中。接著，加入〇_12克的含胺基矽氧烷，於室溫下攪拌30分鐘。之後，以刮刀方式塗佈於鍍有聚對二曱苯(parylene)的玻璃上，並放入烘箱於 80°C及150°C下各烘烤1小時’即可獲得包含二氧化石夕/ 聚亞醯胺B1317-BAPPm (Si02/BB73)的基板結構。【實施例9】四乙氧基矽烷/聚亞醯胺 B1317-BAPPm (TEOS/BB)/Topas/玻璃基板結構之製作首先，在室溫下，將0.2克的四乙氧基矽烷 (tetraethoxysilane，TEOS)與 10 克以固含量 20%溶於 DMAc 的B1317-BAPPm (BB)放入樣品瓶中。接著，以刮刀方式塗佈於塗有Topas的玻璃上，並放入烘箱於8〇°c及150oC 下各烘烤1小時’即可獲得包含四乙氧基矽烧/聚亞醯胺 1354678 B1317-BAPPm (TEOS/BB)的基板結構。【實施例10】胺基矽烷/聚亞酿胺 B1317-BAPPm (amino silane/BB)/Zeonor/玻璃基板結構之製作首先，在室溫下，將0.2克的胺基石夕烧(amino silane) 與10克以固含量20%溶於DMAc的B1317-BAPPm (BB) 放入樣品瓶中。接著，以刮刀方式塗佈於塗有Zeonor的玻璃上，並放入烘箱於80°C及150°C下各烘烤1小時，即可獲得包含胺基矽烷/聚亞醯胺B1317-BAPPm (amino silane/BB)的基板結構。【實施例11】 3·(曱基丙酿氧）丙基三曱氧基矽烷/聚亞醢胺 BIM'BAPPm (MPMS/BB)/Arton/玻璃基板結構之製作首先’在室溫下，將0.2克的3-(曱基丙醯氧）丙基三曱氧基石夕烧(3_(methacryloxy) propyl trimethoxy silane, MPMS) 與10克以固含量20%溶於DMAc的B1317-BAPPm (BB) 放入樣品瓶中。接著，以刮刀方式塗佈於塗有Arton的玻璃上’並放入供箱於80°C及150°C下各烘烤1小時，即可獲得包含3-(曱基丙酿氧）丙基三曱氧基石夕燒/聚亞醢胺 B1317-BAPPm (MPMS/BB)的基板結構。在完成基板結構之後，只要將電子元件製作於含有離型層的範圍内，待整個元件完成後，於離型層的邊界或内側將部分基板與離型層切斷，便可輕易將基板及電子元件 1354678 . 與玻璃分離。表三、表四為本發明離型層與軟性基板對支撐載體之密著度。表三材料密著度(B) Parylene (實施例 3) 〇 Topas (實施例4) 0 Zeonor (實施例4) 0 Arton (實施例4) 0 聚亞醯胺（實施例5) 1 聚亞醯胺+二氧化矽（實施例6〜8) 2〜5 聚亞醯胺+TEOS (實施例9) 5 聚亞醯胺+胺基矽烷（實施例10) 5 聚亞醯胺+MPMS(實施例11) 5 表四二氧化石夕含量（％) 密著度(B) 0 (實施例5) 1 30 (實施例6) 5 50 (實施例7) 3 70 (實施例8) 2 雖然本發明已以較佳實施例揭露如上，然其並非用以 19 1354678 限定本發明，任何熟習此項技藝者，在不脫離本發明之精神和範圍内，當可作更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。16 1354678 . B13l7-BAPPm (BB) is placed in the sample vial. Next, 0.2 g of an amine-containing alkane was added, and the mixture was stirred at room temperature for 30 minutes. Thereafter, it is applied to a glass plated with parylene by a doctor blade, and placed in a box at 8 ° C and 15 ° C for 1 hour to obtain a second oxidation. The substrate structure of Shi Xi / Polyamido B1317-BAPPm (Si02/BB55). [Example 8] Preparation of cerium oxide/polyiminamide B1317-BAPPm ® (Si〇2/BB73)/parylene/glass substrate structure First, 7 g of solid content 20% was dissolved in DMAc at room temperature. The nitric oxide (Si〇2) and 3 g of B1317-BAPPm (BB) dissolved in DMAc at a solid content of 20% were placed in a sample vial. Next, 〇12 g of an amine-containing oxirane was added, and the mixture was stirred at room temperature for 30 minutes. After that, it is applied to a glass plated with parylene by a doctor blade, and baked in an oven at 80 ° C and 150 ° C for 1 hour. Substrate structure of polybendamine B1317-BAPPm (Si02/BB73). [Example 9] Preparation of tetraethoxy decane/polymethyleneamine B1317-BAPPm (TEOS/BB)/Topas/glass substrate structure First, 0.2 g of tetraethoxysilane was added at room temperature. TEOS) was placed in a vial with 10 g of B1317-BAPPm (BB) dissolved in DMAc at 20% solids. Then, it is applied to the Topas-coated glass by a doctor blade, and baked in an oven at 8 ° C and 150 ° C for 1 hour to obtain a tetraethoxy oxime/polyimine 1554678 B1317. -BAPPm (TEOS/BB) substrate structure. [Example 10] Preparation of Aminodecane/Polylanamine B1317-BAPPm (amino silane/BB)/Zeonor/Glass Substrate Structure First, 0.2 g of amino silane was used at room temperature. 10 g of B1317-BAPPm (BB) dissolved in DMAc at a solid content of 20% was placed in a sample vial. Then, it is applied on a Zeonor-coated glass by a doctor blade, and baked in an oven at 80 ° C and 150 ° C for 1 hour to obtain an amino decane/polyimide amine B1317-BAPPm ( The substrate structure of amino silane/BB). [Example 11] 3·(Mercaptopropene oxy)propyltrimethoxy decane/polyimide amine BIM'BAPPm (MPMS/BB)/Arton/glass substrate structure was first prepared 'at room temperature, 0.2 g of 3-(methacryloxy) propyl trimethoxy silane (MPMS) with 10 g of B1317-BAPPm (BB) dissolved in DMAc at 20% solids Into the sample vial. Then, it is coated on the Arton-coated glass by a doctor blade and placed in a box at 80 ° C and 150 ° C for 1 hour to obtain a 3-(mercaptopropyl oxy)propyl group. Substrate structure of trioxetane/polyimide B1317-BAPPm (MPMS/BB). After the substrate structure is completed, as long as the electronic component is fabricated in the range containing the release layer, after the entire component is completed, a part of the substrate and the release layer are cut off at the boundary or inside of the release layer, and the substrate and the substrate can be easily Electronic component 1354678 . Separated from glass. Table 3 and Table 4 show the adhesion of the release layer and the flexible substrate to the support carrier of the present invention. Table 3 Material Adhesion (B) Parylene (Example 3) 〇 Topas (Example 4) 0 Zeonor (Example 4) 0 Arton (Example 4) 0 Polyimine (Example 5) 1 Polyaluminium Amine + cerium oxide (Examples 6 to 8) 2 to 5 Polyimide + TEOS (Example 9) 5 Polyiminide + Aminodecane (Example 10) 5 Polyiminide + MPMS (Example 11) 5 Table 4: SiO2 content (%) Tightness (B) 0 (Example 5) 1 30 (Example 6) 5 50 (Example 7) 3 70 (Example 8) 2 Although the present invention The present invention has been disclosed in the above preferred embodiments, but it is not intended to limit the invention to those skilled in the art, and the present invention can be modified and retouched without departing from the spirit and scope of the present invention. The scope is subject to the definition of the scope of the patent application attached.

20 1354678 【圖式簡單說明】種應用於軟性電一種應用於軟性一種應用於軟性第1圖係根據本發明之一實施例，一子元件基板結構之剖面不意圖。第1A圖係根據本發明之一實施例，電子元件基板結構之上視圖。第2A〜2D圖係為本發明之一實施例，電子元件基板結構製造方法之剖面示意圖【主要元件符號說明】 10〜基板結構， 12〜支撐載體； 14〜離型層； 16〜軟性基板；20 1354678 [Simple description of the diagram] Application to soft electricity One application to softness One application to softness Fig. 1 is a cross-sectional view of a sub-element substrate structure according to an embodiment of the present invention. Fig. 1A is a top view of an electronic component substrate structure in accordance with an embodiment of the present invention. 2A to 2D are diagrams showing an embodiment of the present invention, a schematic cross-sectional view of a method for manufacturing an electronic component substrate structure. [Main component symbol description] 10 to a substrate structure, 12 to a support carrier; 14 to a release layer; 16 to a flexible substrate;

Al、A2〜覆蓋面積； C、C’〜切除點。Al, A2 ~ coverage area; C, C' ~ cut-off point.

Claims

115.4678- Ί 公告本申請專利範圍： 1. 一種應用於軟性電子元件之環烯共聚物離型層材料，具有下列化學式（I)或（II):115.4678- Ί Announcement The scope of patent application: 1. A cyclic olefin copolymer release layer material for soft electronic components having the following chemical formula (I) or (II):

其中X為30〜70，X+Y為100, R為氫、曱基或乙基。 2. 如申請專利範圍第1項所述之應用於軟性電子元件之環烯共聚物離型層材料，其中該離型層材料溶於有機溶劑。 3. —種應用於軟性電子元件之基板結構，包括：一支撐載體；一離型層，以一第一面積覆蓋該支樓載體，形成一或複數個區塊，其中該離型層包括環烯共聚物，具有下列化學式(I)或(II): 22 1354678Wherein X is from 30 to 70, X + Y is 100, and R is hydrogen, decyl or ethyl. 2. The cyclic olefin copolymer release layer material for use in a soft electronic component according to claim 1, wherein the release layer material is soluble in an organic solvent. 3. A substrate structure for a flexible electronic component, comprising: a support carrier; a release layer covering the support carrier with a first area to form one or more blocks, wherein the release layer comprises a ring An olefin copolymer having the following chemical formula (I) or (II): 22 1354678

γ (II) 其中X為30〜70，Χ+Υ為100, R為氫、曱基或乙基；以及一軟性基板，以一第二面積覆蓋該離型層與該支撐載體，其中該第二面積大於該第一面積且該軟性基板對該支撐載體之密著度大於該離型層對該支撐載體之密著度。 4. 如申請專利範圍第3項所述之應用於軟性電子元件之基板結構’其中該支撑載體包括玻璃或秒晶圓。 5. 如申請專利範圍第3項所述之應用於軟性電子元件之基板結構，其中該離型層對該支撐載體之密著度介於 0B〜1B 〇 6. 如申請專利範圍第3項所述之應用於軟性電子元件之基板結構，其中該離型層之固含量介於1〜20%。 7. 如申請專利範圍第3項所述之應用於軟性電子元件之基板結構，其中該離型層之厚度介於0.2〜20微米。 1354678 8. 如申請專利範圍第3項所述之應用於軟性電子元件之基板結構，其中該離型層之厚度介於〇 5〜5微米。 9. 如申请專利範圍第3項所述之應用於軟性電子元件之基板結構，其中該軟性基板對該支撐載體之密著度介於1〜5B。 10. 如申請專利範圍第3項所述之應用於軟性電子元件之基板結構，其中該軟性基板包括聚亞醯胺(polyimide, PI)、聚碳酸酯（polycarbonate，PC)、聚醚楓（p〇lyethersulfone, PES)、聚丙烯酸酯（polyacrylate，PA)、聚原冰稀 # (polynorbornene, PNB)、聚乙烯對苯二曱酸酯（polyethylene terephthalate, PET)、聚趟酉同（polyetheretherketone, PEEK)、聚萘二曱酸乙二醇酯（polyethylene naphthalate, PEN)或聚醚亞醯胺(polyetherimide，PEI)。 11. 如申請專利範圍第10項所述之應用於軟性電子元件之基板結構，其中該聚亞醯胺具有下列化學式(III):γ (II) wherein X is 30 to 70, Χ+Υ is 100, R is hydrogen, fluorenyl or ethyl; and a flexible substrate covering the release layer and the support carrier with a second area, wherein the The second area is larger than the first area and the adhesion of the flexible substrate to the support carrier is greater than the adhesion of the release layer to the support carrier. 4. The substrate structure applied to a flexible electronic component as described in claim 3, wherein the support carrier comprises a glass or a second wafer. 5. The substrate structure applied to the flexible electronic component according to claim 3, wherein the release layer has a density of 0B to 1B 〇6 to the support carrier. The substrate structure is applied to a flexible electronic component, wherein the release layer has a solid content of 1 to 20%. 7. The substrate structure for a flexible electronic component according to claim 3, wherein the release layer has a thickness of 0.2 to 20 μm. The substrate structure for a flexible electronic component according to claim 3, wherein the release layer has a thickness of 〇 5 to 5 μm. 9. The substrate structure for a flexible electronic component according to claim 3, wherein the flexible substrate has a degree of adhesion to the support carrier of 1 to 5B. 10. The substrate structure for soft electronic components according to claim 3, wherein the flexible substrate comprises polyimide (PI), polycarbonate (PC), polyether maple (p) 〇lyethersulfone, PES), polyacrylate (PA), polynorbornene (PNB), polyethylene terephthalate (PET), polyetheretherketone (PEEK) , polyethylene naphthalate (PEN) or polyetherimide (PEI). 11. The substrate structure for soft electronic components according to claim 10, wherein the polyamidolide has the following chemical formula (III):

24 1354678 或γΧ/11 ，其中X與Y為氫、曱基、三氟曱基、羥基、-OR (R為碳數1〜18之烷基）、溴、氯或碘，Ζ為-0-、 -CH2- ' -C(CH3)2- ' -S02- ' -Ar-O-Ar- ' -Ar-CH2-Ar- ' -Ar-C(CH3)2-Ar-或-Ar-S〇2-Ar- (Ar 為笨環）； B 包括□、、24 1354678 or γΧ/11, wherein X and Y are hydrogen, fluorenyl, trifluoromethyl, hydroxy, -OR (R is an alkyl group having 1 to 18 carbon atoms), bromine, chlorine or iodine, and Ζ is -0- , -CH2- '-C(CH3)2- '-S02- '-Ar-O-Ar- '-Ar-CH2-Ar- '-Ar-C(CH3)2-Ar- or -Ar-S〇 2-Ar- (Ar is a stupid ring); B includes □,

σΌ,ΌΌ,

其中X與Y為氫、甲基、三氟曱基、羥基、 -OR(R為碳數1〜18之烷基）、溴、氯或碘，Ζ為-0-、-CH2-、 -C(CH3)2-、-S02-、-Ar-O-Ar-、-Ar-CH2-Ar-、-Ar-C(CH3)2-Ar-或-Ar-S〇2-Ar- (Ar為苯環）；以及 n為大於1之整數。 12. 如申請專利範圍第10項所述之應用於軟性電子元件之基板結構，其中該軟性基板更包括一矽氧烷化合物。 13. 如申請專利範圍第12項所述之應用於軟性電子元件之基板結構，其中該軟性基板更包括氧化矽。 14. 一種應用於軟性電子元件之基板結構之製造方法，包括：提供一支撐載體；以一第一面積覆蓋一離型層於該支撐載體上，形成一或複數個區塊，其中該離型層包括環烯共聚物，具有下列化學式⑴或(II): 25 1354678Wherein X and Y are hydrogen, methyl, trifluoromethyl, hydroxy, -OR (R is an alkyl group having 1 to 18 carbon atoms), bromine, chlorine or iodine, and hydrazine is -0-, -CH2-, -C (CH3)2-, -S02-, -Ar-O-Ar-, -Ar-CH2-Ar-, -Ar-C(CH3)2-Ar- or -Ar-S〇2-Ar- (Ar is Benzene ring); and n is an integer greater than one. 12. The substrate structure for a flexible electronic component according to claim 10, wherein the flexible substrate further comprises a siloxane compound. 13. The substrate structure for a flexible electronic component according to claim 12, wherein the flexible substrate further comprises ruthenium oxide. 14. A method of fabricating a substrate structure for a flexible electronic component, comprising: providing a support carrier; covering a release layer on the support carrier with a first area to form one or more blocks, wherein the release type The layer comprises a cyclic olefin copolymer having the following chemical formula (1) or (II): 25 1354678

其中X為30〜70，X+Y為100, R為氫、曱基或乙基；以及以一第二面積覆蓋一軟性基板於該離型層與該支撐載體上，其中該第二面積大於該第一面積且該軟性基板對該支撐載體之密著度大於該離型層對該支撐載體之密著度。 15. 如申請專利範圍第14項所述之應用於軟性電子元件之基板結構之製造方法，其中該軟性基板以塗佈方式覆蓋於該離型層與該支撐載體上。 16. 如申請專利範圍第14項所述之應用於軟性電子元件之基板結構之製造方法，更包括以該離型層之兩端點或其内側為切除點，切除部分該軟性基板與該支撐載體，以分離該離型層、該軟性基板與該支撐載體。 26Wherein X is 30 to 70, X+Y is 100, R is hydrogen, sulfhydryl or ethyl; and a soft substrate is coated on the release layer and the support carrier by a second area, wherein the second area is greater than The first area and the adhesion of the flexible substrate to the support carrier is greater than the adhesion of the release layer to the support carrier. 15. The method of fabricating a substrate structure for a flexible electronic component according to claim 14, wherein the flexible substrate is coated on the release layer and the support carrier. 16. The method for manufacturing a substrate structure for a flexible electronic component according to claim 14, further comprising cutting a portion of the flexible substrate and the support by using a point of the two ends of the release layer or an inner side thereof as a cut-off point. a carrier to separate the release layer, the flexible substrate, and the support carrier. 26