TWI354598B

TWI354598B -

Info

Publication number: TWI354598B
Application number: TW097112893A
Authority: TW
Inventors: Atsushi Shigeta; Dai Fukushima; Hiroyuki Yano
Original assignee: Toshiba Kk
Priority date: 2007-04-11
Filing date: 2008-04-09
Publication date: 2011-12-21
Also published as: JP2008263027A; TW200906541A; US20080254719A1; JP4374038B2

Description

1354598 九、發明說明：【發明所屬之技術領域】，本發明係關於研料導體基板之周緣部的基板處理方1354598 IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to a substrate processing method for the peripheral portion of a conductive substrate.

法，尤其係關於為去除形成於基板之周緣部的無用膜或凹凸面等的基板處理方法P 本申請案係基於2007年M11曰申請之曰本特願2007_ 104068號並主張其優先權，其全文併入本文供參考。【先前技術】近年來，隨著配線之細微化，應管理粒子及雜質濃度之值亦日益嚴格1用說半導體基板之表面，周緣部（凹口部及斜面部）之管理亦愈加重要。半導體裝置之製造過程中，一邊將以〇2膜、SiN膜等絕緣膜與多Si膜、W膜、Cu膜等導電媒反覆進行成膜露光蝕刻加工等，一邊形成細微配線。該製造過程中，隨絕緣膜或導電臈成膜，亦於基板周緣部形成含有絕緣膜或導電膜之無用膜及凹凸面。該等無用膜或凹凸面於製造過程中成為粒子發生源，作為隨配線之細微化使成品率低下之主要原因愈加表面化。例如’溝式電容器之溝（Deep Trench)之形成過程中，於用CVD法使SiN臈與Si〇2膜依次成膜之積層絕緣膜之上形成抗蝕圖形。其後，藉由將該抗蝕圖形作為遮罩根據 RIE(反應性離子蝕刻，Reactive I〇n Etching)依次蝕刻以〇2 膜、SiN膜及矽基板，藉此形成溝。此時，於基板周緣部’等離子體之生成或蝕刻氣體之供給將變得不安定，有 130431.doc 二I成針狀大起。該針狀突起於基板之搬送時或加工時貝而成為產生粒子的原因。由於該等粒子與所製造之半導體裝置之杰〇、玄* π 成羊的降低相關聯，故有必要去除形成於基板周緣部之針狀突起。處理基板周緣部之方法，有藉由按壓具有被研磨面之基板與研磨面之同時使之滑動，而研磨去除基板上之被研磨膜的研磨技術。該研磨技術有游離磨粒方式與固定磨粒方式。游離磨粒方式，係向不織布構成之研磨面與被研磨面之接觸面供給含有研磨粒子的研磨劑，並同時研磨被研磨面° Μ磨粒方式’係向固^有磨粒之研磨面與被研磨面之接觸面供給純水，並同時研磨被研磨面。過去，用11]定磨纟方式研磨去除溝形成時產生之針狀突起之情形，係用研磨速度較高之鑽石磨粒#4〇〇〇(粒子直徑 3 μηι左右）完全研磨去除矽基板上之SiN膜及針狀突起。其後，用鑽石磨粒#10000(粒子直徑〇5 μπι左右）實施精研磨。然而，根據該方法，雖研磨時間短，但鑽石磨粒 #4000帶給矽基板之損傷較大，鑽石磨粒#1〇〇〇〇之精研磨後亦殘存有損傷（例如，參見特開2〇〇3_2343 14號公報）。作為對该情形之處理，有亦於SiN膜之研磨去除使用鑽石磨粒#10000之方法。然而，該方法’欲研磨去除高硬度膜之SiN膜需要大量時間。其他處理之方法，有一邊將鑽石磨粒按#4000、#8000、#10000之順序，逐漸減小其磨粒大小’一邊改善修整面粗糙度的方法。然而，該方法，由於需使用3種研磨帶’故需要3個研磨頭，使裝置大型化。 130431.doc 1354598 且，由於石夕基板之研磨i亦增A，若於半導體#置之製造過程進行複數回之研磨處理，將脫離其原本之基板的形狀規格，有可能使生產線不能夠正常運行。如此，提高被研磨面之面粗糙度對抑制其後之缺陷的發 . 生係必要的。為提高被研磨面之面粗輪度，減小磨粒大小較為有效。然而，研磨去除SiN膜或Si〇2臈之類的高硬度 ' 膜時，若減小磨粒大小，則研磨速度將顯著降低，有生產力惡化之副作用。為不使被研磨面之面粗糙度惡化而提高研磨去除效率，提案有研磨令之藥液添加（例如，參考特開細⑽洲號公報）。該提案提出，^高石夕基板上之SiN膜之去除效率’添加有聚乙稀亞胺或四甲鞍氫氧化物。然而，該方法’由於於基板表面亦暴露於相同的藥液，故有對石夕基板造成钱刻之副作用。【發明内容】 •、本發明之一形態之為一種研磨基板周緣部的基板處理方法，包括：於半導體基板之周緣部與以固定有磨粒之第！研磨面接觸之狀態下’藉由滑動上述基板與上述P研磨 •面而研磨上述基板之周緣部’其中該磨粒係以對於氧化矽 ‘系或氮化石夕系之膜具有化學效果之粒子作為主成分；於上述基板之周緣部與固定有磨粒之第2研磨面接觸之狀態 "3動上述基板與上述第2研磨面而研磨上述基板之周緣。P，其中該磨粒係含有以機械效果為主體之磨粒。本發明之另一形態為一種研磨基板周緣部的基板處理方 130431.doc 2 ’包括：使用含㈣於氧化㈣或氣化㈣之膜具有化子效果之粒子作為主成分之磨粒之第1研磨液，研磨半導體基板之周緣部；佶用人士 3有以機械效果為主體之磨粒之第 2研磨液’研磨上料導縣板之周緣部。、本發明之另一形態係-種研磨基板周緣部的基板處理方法▲，包括：使用含有對於氧化石夕系或說化石夕系之膜具有化六果之粒子為主成分之磨粒之研磨液，或使固定有該磨粒之研磨面與半導體基板之周緣部接觸，而研磨上述基板之周緣部；使用含有以機械效果為主體之磨粒之研磨液，或使固定有該磨粒之研磨面與上述半導體基板之周緣部接觸’而研磨上述基板之周緣部。【實施方式】以下，兹佐參照圖式|詳細說(明本發明之實施形態。 (第1實施形態）圓IA 1B係本發明之第1實施形態之基板處理步驟的剖面圖圖1A表示被處理基板之研磨前的狀態，圖1B表示被處理基板之研磨後的狀態。圖中之1〇係矽基板，i i係 Si〇2膜，12係 SiN膜。本實施形態中，對於圖丨八所示之構造，於矽基板ι〇之周緣部’與固定有對於Si〇2及SiN具有化學效果之二氧化鈽 (氧化鈽）粒子為主成分之磨粒之第1研磨面接觸。之後，於该狀態下藉由旋轉基板丨〇，而研磨基板周緣部。其次，於矽基板10之周緣部，使固定有以機械效果為主體之鑽石磨粒之第2研磨面接觸。之後，於該狀態下藉由旋轉基板 130431.doc 1354598 ι〇，而研磨基板周緣部。藉此，如圖1B所示，於基板ι〇之周緣部去除Si〇2膜u或_膜12之同時，使基板周緣部之表面粗縫度變得極小。以下，具體說明本實施形態。圖2係本實施形態中使用之固定磨粒方式之研磨裝置的概略構成圖。載置有被處理基板20之台21，可藉由發動機22旋轉。基板20，其中心與台21之中心對準並被吸著固定於台Μ，基板20之周緣部的一部分與研磨帶23接觸。研磨帶^，被接續於無圖示之圓筒之研磨頭24按壓於基板側。且，在藉由研磨頭24將研磨帶23按壓於基板20之周緣部之狀態下，藉由發動機22使基板20旋轉，便可研磨基板2〇之周緣部。即，可以將於基板20之周緣部成膜之無用膜的一部分或全部研磨去除直至基板10之表面露出。又，研磨時，自基板中心近旁之嘖嘴25向基板表面供給純水，該純水供給於基板周緣部之研磨區域。作為研磨帶23，使用了如圖3A、3]3所示之第1研磨帶 23a與第2研磨帶23b之2種，第1研磨帶23a固定有以具有化學效果之粒子為主成分之磨粒；第2研磨帶23b固定有以機械效果為主體之磨粒。第！研磨帶23a，如圖3A所示，係於 PET(聚對苯二甲酸乙二醇酯）膜3丨上藉由粘合劑3 2粘著固定有二氧化鈽磨粒33(#〗〇〇〇〇 :粒子直徑〇·5 μπ1左右）者。第1研磨帶23a之帶寬為8〇 mm，厚為5〇 μπι。第2研磨帶 23b，如圖3Β所示，係於PET膜31上藉由枯合劑32枯著固 I30431.doc -10- 1354598 定有鑽石磨粒34(#l〇〇〇〇 :粒子直徑〇·5 μηι左右）者。第2研磨帶23b之帶寬及厚與研磨帶23a相同。該等2種研磨帶 23，根據需要可以交換。再者，該等研磨帶23，藉由研磨時少許纏繞’可將因研磨而劣化之部分置換為新的研磨面。In particular, the present invention relates to a substrate processing method for removing a film or a concave-convex surface formed on a peripheral portion of a substrate, and the present application is based on the Japanese Patent Application No. 2007-104068, the entire disclosure of which is incorporated herein by reference. The full text is incorporated herein by reference. [Prior Art] In recent years, with the miniaturization of wiring, the value of the concentration of particles and impurities to be managed has become increasingly strict. 1. The surface of the semiconductor substrate and the management of the peripheral portion (notch and bevel) are becoming more and more important. In the manufacturing process of the semiconductor device, a fine wiring is formed while performing an overcoat etching process such as a ruthenium film such as a ruthenium film or a SiN film, and a conductive film such as a Si film, a W film, or a Cu film. In the manufacturing process, an insulating film or a conductive film is formed on the periphery of the substrate, and an unnecessary film and an uneven surface containing an insulating film or a conductive film are formed on the periphery of the substrate. These useless films or irregularities become a source of particle generation during the manufacturing process, and are increasingly surfaced as a main cause of a decrease in yield with miniaturization of wiring. For example, in the formation of a trench of a trench capacitor, a resist pattern is formed on a laminated insulating film in which SiN臈 and Si〇2 films are sequentially formed by a CVD method. Thereafter, the ruthenium film, the SiN film, and the ruthenium substrate are sequentially etched by RIE (Reactive Ion Etching) using the resist pattern as a mask to form a trench. At this time, the generation of plasma or the supply of the etching gas in the peripheral portion of the substrate becomes unstable, and there is a large amount of 130431.doc. This needle-like projection causes the particles to be generated during the conveyance of the substrate or during the processing. Since the particles are associated with the reduction of the scorpion and the sputum of the manufactured semiconductor device, it is necessary to remove the acicular protrusion formed on the peripheral portion of the substrate. The method of processing the peripheral edge portion of the substrate has a polishing technique of polishing and removing the film to be polished on the substrate by pressing the substrate having the surface to be polished and the polishing surface while sliding. The grinding technique has a free abrasive pattern and a fixed abrasive pattern. In the free abrasive method, an abrasive containing abrasive particles is supplied to a contact surface between a polishing surface formed of a non-woven fabric and a surface to be polished, and the surface to be polished is polished at the same time as the abrasive surface of the abrasive grain. Pure water is supplied to the contact surface of the polished surface, and the surface to be polished is simultaneously polished. In the past, the acicular protrusions generated during the formation of the grooves were removed by grinding in a fixed manner, and the diamond abrasive grains #4〇〇〇 (particle diameter 3 μηι or so) having a high grinding speed were completely ground and removed on the substrate. SiN film and acicular protrusions. Thereafter, the grinding abrasive was carried out using Diamond Abrasive #10000 (particle diameter 〇 5 μπι or so). However, according to this method, although the grinding time is short, the damage caused by the diamond abrasive grain #4000 to the ruthenium substrate is large, and the diamond abrasive grain #1〇〇〇〇 is also damaged after the fine grinding (for example, see the special opening 2) 〇〇3_2343 No. 14 bulletin). As a treatment for this case, there is also a method of removing and using the diamond abrasive grain #10000 from the SiN film. However, this method requires a large amount of time to polish the SiN film of the high hardness film. For other treatment methods, there is a method of improving the roughness of the finishing surface while gradually reducing the size of the abrasive grains by the order of #4000, #8000, #10000 in the order of #4000, #8000, #10000. However, in this method, since three types of polishing tapes are required, three polishing heads are required to increase the size of the apparatus. 130431.doc 1354598 Moreover, since the grinding i of the Shixi substrate is also increased by A, if the grinding process is performed in the manufacturing process of the semiconductor #, the shape of the original substrate will be removed, and the production line may not operate normally. . In this way, it is necessary to increase the surface roughness of the surface to be polished to suppress the defects thereafter. In order to increase the coarseness of the surface of the surface to be polished, it is effective to reduce the size of the abrasive grains. However, when the high-hardness film such as SiN film or Si〇2臈 is removed by grinding, if the size of the abrasive grains is reduced, the polishing rate is remarkably lowered, and there is a side effect of deterioration in productivity. In order to improve the polishing removal efficiency without deteriorating the surface roughness of the surface to be polished, a chemical solution for grinding is proposed (for example, refer to Japanese Patent Publication (Kokai)). The proposal proposes that the removal efficiency of the SiN film on the substrate is added with polyethyleneimine or tetramethyl saddle hydroxide. However, this method has a side effect on the stone substrate because the surface of the substrate is also exposed to the same chemical liquid. SUMMARY OF THE INVENTION According to one aspect of the invention, a substrate processing method for polishing a peripheral portion of a substrate includes: a peripheral portion of the semiconductor substrate and a portion to which the abrasive grains are fixed! In a state in which the polishing surface is in contact, the peripheral edge portion of the substrate is polished by sliding the substrate and the P-polishing surface, wherein the abrasive particles are particles having a chemical effect on a film of cerium oxide or cerium a main component; in a state in which a peripheral portion of the substrate is in contact with a second polishing surface to which the abrasive grains are fixed, the substrate and the second polishing surface are moved to polish a peripheral edge of the substrate. P, wherein the abrasive grain system contains abrasive grains mainly based on mechanical effects. Another aspect of the present invention is a substrate processing method 130431.doc 2' for polishing a peripheral portion of a substrate, comprising: using the first particle of the abrasive particles containing (4) a film having a chemical effect (4) or a gasification (4) as a main component. The polishing liquid is used to polish the peripheral portion of the semiconductor substrate; and the third person having the mechanical effect as the main abrasive is used to polish the peripheral portion of the upper plate. According to another aspect of the present invention, there is provided a substrate processing method ▲ for polishing a peripheral portion of a substrate, comprising: grinding using an abrasive grain containing particles of a hexavalent fruit as a main component of a film of oxidized stone or fossil a liquid, or a polishing surface to which the abrasive grains are fixed, is brought into contact with a peripheral portion of the semiconductor substrate to polish a peripheral portion of the substrate; and a polishing liquid containing abrasive grains mainly composed of mechanical effects is used, or the abrasive grains are fixed The polishing surface is in contact with the peripheral edge portion of the semiconductor substrate to polish the peripheral portion of the substrate. [Embodiment] The following is a detailed description of the embodiment of the present invention. (First embodiment) A circle IA 1B is a cross-sectional view of a substrate processing step according to a first embodiment of the present invention. Fig. 1B shows a state before polishing of the substrate, and Fig. 1B shows a state after polishing of the substrate to be processed. In the figure, a tantalum-based substrate, a ii-based Si〇2 film, and a 12-series SiN film are used. The structure shown is in contact with the first polishing surface of the abrasive substrate in which the ruthenium oxide (ruthenium oxide) particles having chemical effects on Si〇2 and SiN are fixed on the peripheral edge portion of the ruthenium substrate 。. In this state, the peripheral edge portion of the substrate is polished by rotating the substrate 。. Next, the second polishing surface to which the diamond abrasive grains mainly composed of mechanical effects are fixed is brought into contact with the peripheral edge portion of the ruthenium substrate 10. In the state, the peripheral portion of the substrate is polished by rotating the substrate 130431.doc 1354598 ι. Thereby, as shown in FIG. 1B, the Si〇2 film u or the film 12 is removed at the peripheral portion of the substrate ι, and the substrate is made The surface roughness of the peripheral portion becomes extremely small. The present embodiment is specifically described. Fig. 2 is a schematic configuration diagram of a polishing apparatus of a fixed abrasive type used in the embodiment. The stage 21 on which the substrate 20 to be processed is placed can be rotated by the engine 22. The center is aligned with the center of the table 21 and is affixed and fixed to the table, and a part of the peripheral portion of the substrate 20 is in contact with the polishing tape 23. The polishing tape is pressed by the polishing head 24 connected to the cylinder (not shown). In the state in which the polishing tape 23 is pressed against the peripheral edge portion of the substrate 20 by the polishing head 24, the substrate 20 is rotated by the engine 22, whereby the peripheral portion of the substrate 2 can be polished. A part or all of the unnecessary film formed on the peripheral portion of the substrate 20 is polished and removed until the surface of the substrate 10 is exposed. Further, during polishing, the nozzle 25 near the center of the substrate supplies pure water to the surface of the substrate, and the pure water is supplied to the periphery of the substrate. As the polishing tape 23, two types of the first polishing tape 23a and the second polishing tape 23b shown in Figs. 3A and 3] 3 are used, and the first polishing tape 23a is fixed with chemically active particles. Abrasive grain as the main component; 2nd The abrasive tape 23b is fixed with abrasive grains mainly composed of mechanical effects. The first abrasive tape 23a, as shown in FIG. 3A, is attached to the PET (polyethylene terephthalate) film 3 by means of the adhesive 3 (2) The cerium oxide abrasive grains 33 (#〗〇〇〇〇: particle diameter 〇·5 μπ1 or so) are adhered and fixed. The first polishing tape 23a has a bandwidth of 8 mm and a thickness of 5 〇μπι. The belt 23b, as shown in FIG. 3A, is fixed on the PET film 31 by the dry agent 32. I30431.doc -10- 1354598 is provided with diamond abrasive grains 34 (#l〇〇〇〇: particle diameter 〇·5 μηι The distance and thickness of the second polishing tape 23b are the same as those of the polishing tape 23a. These two types of polishing tapes 23 can be exchanged as needed. Further, the polishing tapes 23 can be replaced with a new polishing surface by polishing a portion by a little entanglement during polishing.

如上述圖1Α所示’於矽基板1〇之表面全體，藉由cvd法依次使厚100 nm之8丨02膜11與厚1〇〇 nm之SiN膜12成膜。以下說明使用之本實施形態的研磨方法去除成膜於該基板 10之周緣部的積層絕緣膜的結果。使用上述圖2所示之研磨裝置，設置粘著固定有圖3八所示之二氧化鈽磨粒之第！研磨帶23a作為研磨帶23。將被處理基板20吸著於台21，以一定速度使台21旋轉。與此同時，藉由一邊以一定速度送出研磨帶23，一邊使研磨帶23 按壓於基板周緣部，進行基板周緣部之研磨。相對過去技術之鑽石磨粒#4〇〇〇與鑽石磨粒#1〇〇〇〇之組As shown in Fig. 1A above, the entire surface of the tantalum substrate 1 is sequentially formed by a cvd method in which an 8 丨 02 film 11 having a thickness of 100 nm and a SiN film 12 having a thickness of 1 〇〇 are formed. The result of removing the laminated insulating film formed on the peripheral portion of the substrate 10 by the polishing method of this embodiment used will be described below. Using the polishing apparatus shown in Fig. 2 described above, the first place of the cerium oxide abrasive grains shown in Fig. 3 is adhered and fixed! The polishing tape 23a serves as the polishing tape 23. The substrate 20 to be processed is sucked onto the stage 21, and the stage 21 is rotated at a constant speed. At the same time, the polishing tape 23 is pressed against the peripheral edge portion of the substrate while the polishing tape 23 is fed at a constant speed to polish the peripheral edge portion of the substrate. Compared to the past technology of diamond abrasive grain #4〇〇〇 and diamond abrasive grain #1〇〇〇〇 group

合，研磨i時間雖增長至2倍，但研磨後之表面粗链度降低至1/5。且，與僅藉由相同粒子直徑之鑽石磨粒Hoooo進行研磨去除比較’研磨時間縮短至1/10，研磨後之表面粗糖度降低至約1 /2。另方面，若將對於矽基板10之研磨能力，從研磨前後之基板重里變化比較，比鑽石磨粒#彻〇低,又比鑽石磨粒#刚〇〇低1/5。此等說明，二氧化筛磨粒對於⑽2膜 11或㈣膜12，有效地發揮化學作用。且，亦說明對於Si 不起化學作用，而依存於磨粒自身之機械強度。 I30431.doc 1354598 研磨基板周緣部時，由於被研磨面於矽基板1〇之剖面方向及圓周方向有曲率，故以使研磨頭24沿矽基板1〇之曲率而一邊轉動接觸面一邊進行研磨。此時，為不產生研磨殘留有必要過量研磨。該過量研磨，有利地發揮了對si〇2或 SiN之研磨能力高、對Si研磨能力低之二氧化鈽磨粒的特 " 徵。即，二氧化鈽磨粒對堆積於矽基板10之周緣部之無用膜（Si〇2膜、SiN膜）的研磨去除極其有效。如此，藉由使用固定粘著有二氧化鈽磨粒之第丨研磨帶 23a，相對過去技術之鑽石磨粒#4〇〇〇與鑽石磨粒之組合，研磨後之表面粗糙度充分降低，而研磨時間增長。因此，以由上述結果以縮短研磨時間為目的，對將固定粘著有一乳化筛磨粒（#1〇〇〇〇)之研磨帶23a與固定枯著有鑽石磨粒（#10000)之研磨帶23b組合之實施形態進行說明。最初，用固定粘著有二氧化鈽磨粒之第i研磨帶23a開始積層絕緣膜之研磨去除，並持續研磨直至底層之Si之—部 φ 分露出。其次，變更為利用固定粘著有比二氧化鈽磨粒對矽基板有更高研磨能力的鑽石磨粒之第2研磨帶23b加以研磨。由此，總計之研磨時間比僅用二氧化鈽磨粒之情形改善至約1/2。即，與過去技術之鑽石磨粒#4000與鑽石磨粒 # 10000之組合的時間相同。且，此時之研磨後的表面粗糙度，相對過去技術之鑽石磨粒#4〇〇〇與鑽石磨粒#1〇〇〇〇之組合，約降低至1/3。另，將用二氧化鈽磨粒之第1研磨帶23a之研磨階段，盘用鑽石磨粒之第2研磨帶23b之研磨階段分開之情形，若利 130431.doc 1354598 用保持.旋轉研磨對象基板之發動機之旋轉負荷的變化，切換研磨階段，將較有效率。又，代替先藉由第1研磨帶233之研磨修整後再藉由第：研磨帶23b之研磨，而將藉由第〗研磨帶23a之研磨與藉由第2研磨帶23b之研磨重複互換，亦可獲得大致與上述相的效果。However, although the grinding time has increased by a factor of 2, the surface roughness after grinding is reduced to 1/5. Moreover, the grinding time was shortened to 1/10, and the surface roughness after grinding was reduced to about 1 /2, compared with the grinding removal by the diamond abrasive Hoooo of the same particle diameter. On the other hand, if the polishing ability for the ruthenium substrate 10 is changed from the weight of the substrate before and after the polishing, it is lower than that of the diamond abrasive grain #1, and is 1/5 lower than that of the diamond abrasive grain #. These explanations show that the sieving mesh abrasive particles effectively exert a chemical action on the (10) 2 film 11 or the (iv) film 12. Moreover, it also shows that there is no chemical action for Si, but it depends on the mechanical strength of the abrasive particles themselves. I30431.doc 1354598 When the peripheral portion of the substrate is polished, since the surface to be polished has a curvature in the cross-sectional direction and the circumferential direction of the ruthenium substrate 1A, the polishing head 24 is polished while rotating the contact surface along the curvature of the ruthenium substrate 1〇. At this time, it is necessary to excessively grind in order not to cause grinding residue. This excessive polishing advantageously exerts a special feature of the cerium oxide abrasive grains having high polishing ability for Si〇2 or SiN and low Si polishing ability. In other words, the cerium oxide abrasive grains are extremely effective for polishing and removing the unnecessary film (Si〇2 film, SiN film) deposited on the peripheral edge portion of the ruthenium substrate 10. Thus, by using the second rubbing belt 23a to which the cerium oxide abrasive grains are fixedly adhered, the surface roughness after grinding is sufficiently lowered as compared with the combination of the prior art diamond abrasive grains #4〇〇〇 and the diamond abrasive grains. Grinding time increases. Therefore, for the purpose of shortening the polishing time by the above result, the polishing tape 23a to which the emulsified sieve abrasive grain (#1〇〇〇〇) is fixedly adhered and the polishing tape which is fixed with the diamond abrasive grain (#10000) The embodiment of the 23b combination will be described. Initially, the laminated insulating film is removed by the ith polishing tape 23a to which the cerium oxide abrasive grains are fixedly adhered, and is continuously polished until the Si portion φ of the underlying layer is exposed. Next, it was changed to the second polishing tape 23b which was fixedly adhered to the diamond abrasive grains having higher polishing ability to the ruthenium substrate than the cerium oxide abrasive grains. Thus, the total grinding time is improved to about 1/2 as compared with the case where only the cerium oxide abrasive grains are used. That is, the same time as the combination of the prior art diamond abrasive grain #4000 and diamond abrasive grain # 10000. Moreover, the surface roughness after grinding at this time is reduced to about 1/3 with respect to the combination of the prior art diamond abrasive grain #4〇〇〇 and diamond abrasive grain #1〇〇〇〇. Further, in the polishing stage of the first polishing tape 23a of the cerium oxide abrasive grains, the polishing stage of the second polishing tape 23b of the diamond abrasive grains is separated, and the substrate of the polishing target is rotated by 130431.doc 1354598. It is more efficient to change the rotational load of the engine and switch the grinding stage. Further, instead of polishing by the first polishing tape 233 and then polishing by the first polishing tape 23b, the polishing by the polishing tape 23a and the polishing by the second polishing tape 23b are repeatedly exchanged. It is also possible to obtain an effect substantially similar to the above.

又，如圖4所示，於被處理基板2〇之周緣部的不同處，與固定粘著有二氧化鈽磨粒之第1研磨帶23a、與固定粘著有鑽石磨粒之第2研磨帶23b同時接觸，令二氧化飾磨粒與鑽石磨粒之研磨並行。該情形，研磨時間比僅有二氧化鈽磨粒之情形改善至約1/3。~ ’相對過去技術之鑽石磨粒卿〇與鑽石磨粒嶋00之組合，研磨時間縮短至Μ，研磨後之表面粗糖度降低至約1/3。Further, as shown in FIG. 4, the first polishing tape 23a to which the cerium oxide abrasive grains are fixed and adhered, and the second polishing to which the diamond abrasive grains are fixed and adhered are fixed at different portions of the peripheral portion of the substrate 2 to be processed. The belt 23b is in contact at the same time, so that the oxidized abrasive grains are in parallel with the grinding of the diamond abrasive grains. In this case, the grinding time is improved to about 1/3 as compared with the case of only the cerium oxide abrasive grains. ~ ‘Compared with the past technology of diamond abrasive grains 〇〇 and diamond abrasive 嶋 00 combination, the grinding time is shortened to Μ, the surface roughness after grinding is reduced to about 1/3.

該結果顯心藉由對於高硬度之SiQ2mi與siN膜12所實施之高研磨效率之二氧化錦磨粒的研磨，與底層石夕基板之-部分露出後藉由鑽石磨粒的石夕研磨，以效率提高之相乘效果，使得積層絕緣膜之去除效率提高。如此，本實施形態，對於於石夕基板^之表面形成含有 Sl02膜11及SiN膜12等之高硬度膜之無用膜的被處理基板可用固定粘著有 ,, 氧鈽磨粒之第1研磨帶23a與固定枯著有鑽石磨粒之第2研磨帶23b進行研磨。藉此，可高效 ^除無用膜，又可提高研磨面精度。故，由生產性之提局與缺陷降低而可提高成品率。即’藉由將使料有化學效果之絲㈣隸使用具有 130431.doc 1354598 機械效果之磨粒的研磨並用，可以高效率地去除含有氧化矽系或氮化矽系之高硬度膜的無用膜或凹凸面，並且可使研磨面精度提高。另，代替Si〇2膜11與8旧膜12之積層膜，藉由cvd法於矽基板10上成膜厚200 nm之Si〇2膜，為去除此時之基板周緣部之膜使用上述圖4所示之研磨裝置利用本實施形態。其結果’相對過去之鑽石#4000及#1〇〇〇〇之組合，二氧化鈽磨粒#10000與鑽石磨粒#10000之組合，研磨時間約縮短至1/2 ’表面粗縫度改善至】/3。同樣地，藉由CVD法於矽基板1〇上成膜厚2〇() nm之SiN 膜，為去除此時之基板周緣部之膜使用上述圖4所示之研磨裝置利用本實施形態》其結果，相對過去之鑽石#4〇〇〇及#10000之組合，二氧化鈽磨粒#10000與鑽石磨粒#1〇〇〇〇之組合’研磨時間約縮短至3 /4，表面粗糙度改善至1 /3。 (第2實施形態）圖5A〜5C係本發明之第2實施形態之基板處理步驟的剖面圖。圖5A表示溝形成之狀態，圖5B表示被處理基板之研磨前的狀態’圖5C表示被處理基板之研磨後的狀態。圖中之10係矽基板，丨丨係Si〇2膜，12係8^膜，13係矽之針狀突起。如圖5A所示’藉由LP-CVD法，使SiN膜12及8丨02膜11依次堆積於矽基板1〇之表面，將此圖案化並形成由“^膜12 及Si〇2膜11之積層膜構成之硬遮罩。其後，用該硬遮罩藉由RIE法將矽基板1〇蝕刻，形成溝。此時，基板周緣部產 130431.doc -14- 1354598 生蝕刻混亂，形成遮罩之殘渣或Si之針狀突起13。其後，藉由濕法钱刻剝離Si〇2膜11。將Si〇2膜11剝離之狀態示於圖5B，於矽基板1〇之周緣部產生SiN膜12與矽針狀突起13。含有於該等溝形成時產生 • 之SiN膜12之矽針狀突起13的去除及基板平坦化係適用本實施形態之研磨方法。本實施形態，亦適用將固定粘著有二氧化鈽磨粒#1〇〇〇〇 φ 之研磨帶23a與固定粘著有鑽石磨粒#1〇〇〇〇之研磨帶23b組口之研磨方法。使用上述圖4所示之研磨裝置，於一定研磨條件下實施研磨，修整如圖5C所示之被研磨基板的剖面圖0 在此，僅用二氧化鈽磨粒之研磨帶23a嘗試SiN膜l2與矽針狀突起13之去除及基板10之平坦化後，相對過去技術之鑽石磨粒#4000與鑽石磨粒#1〇〇〇〇之組合，即使研磨時間增長至2倍，亦無法完成矽針狀突起13之去除。此係由於This result is apparently caused by the grinding of the high-efficiency bismuth oxide abrasive grains applied to the high-hardness SiQ2mi and the siN film 12, and the partial polishing of the underlying stone substrate, which is ground by diamond abrasive grains. The efficiency of multiplication by the efficiency is improved, and the removal efficiency of the laminated insulating film is improved. As described above, in the present embodiment, the substrate to be processed containing the unnecessary film of the high-hardness film such as the S02 film 11 and the SiN film 12 can be fixedly adhered to the surface of the stone substrate, and the first polishing of the cerium abrasive grains can be performed. The belt 23a is ground with a second polishing belt 23b fixed with diamond abrasive grains. Thereby, it is possible to efficiently remove the useless film and improve the precision of the polished surface. Therefore, the yield can be improved by the reduction of productivity and the reduction of defects. That is, by using the abrasive (4) which has a chemical effect on the material, the abrasive film containing the mechanical effect of 130431.doc 1354598 can be used together, and the useless film containing the high hardness film of the yttrium oxide or tantalum nitride system can be efficiently removed. Or uneven surface, and can improve the precision of the polished surface. Further, instead of the laminated film of the Si〇2 film 11 and the 8 old film 12, a Si 2 film having a thickness of 200 nm was formed on the tantalum substrate 10 by the cvd method, and the above-mentioned pattern was used to remove the film on the peripheral edge portion of the substrate at this time. The polishing apparatus shown in Fig. 4 uses this embodiment. The result 'relative to the combination of the past diamond #4000 and #1〇〇〇〇, the combination of cerium oxide abrasive grain #10000 and diamond abrasive grain #10000, the grinding time is shortened to 1/2 'the surface roughness is improved to 】 / 3. Similarly, a SiN film having a thickness of 2 Å (nm) is formed on the ruthenium substrate 1 by a CVD method, and the film of the peripheral portion of the substrate at this time is removed by using the polishing apparatus shown in FIG. 4 described above. As a result, compared with the previous combination of diamond #4〇〇〇 and #10000, the combination of cerium oxide abrasive grain #10000 and diamond abrasive grain #1〇〇〇〇' grinding time is shortened to about 3 / 4, surface roughness is improved To 1/3. (Second Embodiment) Figs. 5A to 5C are cross-sectional views showing a substrate processing procedure according to a second embodiment of the present invention. Fig. 5A shows a state in which the groove is formed, and Fig. 5B shows a state before polishing of the substrate to be processed. Fig. 5C shows a state after polishing of the substrate to be processed. In the figure, 10 矽 substrates, 丨丨 Si 2 film, 12 series 8 film, 13 system 针 needle-like protrusions. As shown in FIG. 5A, the SiN film 12 and the 8 丨 02 film 11 are sequentially deposited on the surface of the ruthenium substrate 1 by the LP-CVD method, and patterned and formed by the "film 12 and the SiO 2 film 11". A hard mask made of a laminated film is formed. Thereafter, the germanium substrate 1 is etched by the RIE method to form a trench. At this time, the peripheral edge portion of the substrate is 130431.doc -14-1354598, and the etching is disordered. The residue of the mask or the acicular protrusions 13 of Si. Thereafter, the Si〇2 film 11 is peeled off by wet etching. The state in which the Si〇2 film 11 is peeled off is shown in Fig. 5B, and the peripheral portion of the substrate 1 is folded. The SiN film 12 and the acicular protrusions 13 are produced. The polishing method of the present embodiment is applied to the removal of the acicular protrusions 13 of the SiN film 12 generated during the formation of the grooves and the planarization of the substrate. A method of grinding a polishing tape 23a to which a cerium oxide abrasive grain #1〇〇〇〇φ is fixedly adhered and a polishing tape 23b to which a diamond abrasive grain #1〇〇〇〇 is adhered is used. The polishing apparatus shown is subjected to grinding under certain grinding conditions to trim the cross-sectional view of the substrate to be polished as shown in Fig. 5C. Here, The abrasive belt 23a of the cerium oxide abrasive grain is attempted to remove the SiN film 12 and the acicular protrusion 13 and the flattening of the substrate 10, and the combination of the diamond abrasive grain #4000 and the diamond abrasive grain #1〇〇〇〇 of the prior art. Even if the grinding time is increased to 2 times, the removal of the needle-like protrusions 13 cannot be completed.

㈣㈣之去除有所進展，但料狀突起13之去除及基板平坦化之進行變緩慢之故。另-方面，若使用將二氧化飾磨粒之^研磨帶…與鑽石磨粒之第2研磨帶23b組合之研磨方法，相對過去技術，研磨時間縮短至2/3，於過去技術所觀察到之由鑽石磨粒 #4000造成之研磨損傷消失，表面粗糙度亦改善至Η]。即，當有必要進行氧切彳、或氮切“無㈣之去除鱼基板之平坦化時，：氧㈣磨粒之第】研磨帶…與鑽石磨粒之第2研磨帶23b之組合，顯示更加有效。 13043I.doc 1354598 如此根據本實施形態，對於於矽基板1〇之表面形成 SiN膜12或矽針狀突起13等之被處理基板，藉由用固定粘著有二氧化鈽磨粒之第丨研磨帶23a與固定粘著有鑽石磨粒之第2研磨帶23b進行研磨，可將基板周緣部之無用膜及針狀突起13高效率地去除，並可提高研磨面精度。故，w 得與第1實施形態相同之效果。 (第3實施形態）(4) (4) The removal of the material has progressed, but the removal of the material protrusions 13 and the flattening of the substrate become slow. On the other hand, if a polishing method in which the polishing belt of the oxidized abrasive grains is combined with the second polishing tape 23b of the diamond abrasive grains is used, the polishing time is shortened to 2/3 as compared with the prior art, as observed in the prior art. The grinding damage caused by Diamond Abrasive #4000 disappeared and the surface roughness improved to Η]. That is, when it is necessary to carry out oxygen cutting or nitrogen cutting, the flattening of the fish substrate is removed, and the combination of the first polishing tape of the oxygen (four) abrasive grains and the second polishing tape 23b of the diamond abrasive grains is displayed. 13043I.doc 1354598 According to the present embodiment, the substrate to be processed, such as the SiN film 12 or the acicular protrusions 13, is formed on the surface of the ruthenium substrate 1 by using the ruthenium dioxide abrasive grains fixedly adhered thereto. The second polishing tape 23a is polished by the second polishing tape 23b to which the diamond abrasive grains are fixed, and the unnecessary film and the needle-like projections 13 on the peripheral portion of the substrate can be efficiently removed, and the polishing surface accuracy can be improved. The same effect as in the first embodiment is obtained. (Third embodiment)

圖6A〜6D係本發明之第3實施形態之基板處理步驟的剖面圖。本實施形態，係為去除金屬膜（Ni ' 〇〇等）之矽化物形成時產生之基板周緣部的金屬污染的適用例。首先，如圖6A所示，使811^膜12堆積於矽基板1〇上炙後，於SiN膜12上塗布抗蝕膜（無圖示）。其後，將抗蝕膜作為遮罩藉由光微影技術於矽基板丨〇上形成開口部。6A to 6D are cross-sectional views showing a substrate processing procedure in a third embodiment of the present invention. This embodiment is an application example for removing metal contamination of the peripheral portion of the substrate which is generated when a metal film (such as Ni' 〇〇) is formed. First, as shown in Fig. 6A, a film 119 is deposited on the ruthenium substrate 1 and then a resist film (not shown) is applied over the SiN film 12. Thereafter, an opening is formed on the crucible substrate by photolithography using the resist film as a mask.

其次，如圖6B所示，例如藉由濺鍍法堆積金屬（c〇)，於 SiN膜12及基板1〇之露出部分形成金屬膜（(：〇膜）6卜其後，藉由進行熱處理，如圖6C所示，僅使於開口部露出之基板si之表面與金屬反應，形成矽化膜（(：〇8丨獏）62。未反應之金屬膜61藉由蝕刻等去除。此時，若未充分進行向矽基板10之周緣部之抗蝕膜的塗布，便有可能於矽基板1〇上形成開口部時於周緣部露出基板si。當於基板以露出於周緣部之狀態下堆積金屬膜並進行熱處理時，於周緣部露出之Si與金屬將發生反應，形成矽化膜等金屬膜與以之反應物’有由矽基板1 〇之周緣部產生金屬污染之問題。 130431.doc 16 1354598 為防止該金屬污染，最好於矽化膜等反應物形成後，去除周緣部之金屬石夕化膜62及SiN膜12。在此，去除基板周緣部之SiN膜12，如亦可由圖6C獲知，係由於研磨基板周緣部之金屬矽化膜62時周邊之SiN膜12將成為障礙。即，係由於若金屬矽化膜62之周邊殘留有81]^膜12，則利用機械效果之金屬矽化膜62之研磨將無法進展。對去除產生於基板周緣部之金屬污染而使用本實施形態之結果加以說明。使用以上實施形態所說明之將固定粘著有二氧化鈽磨粒之第1研磨帶23a與固定粘著有修整用鑽石磨粒之第2研磨帶2 3 b組合之研磨方法。使用上述圖4所示之研磨裝置，將被處理基板2〇吸著於台21上，並以一定速度旋轉台21。再者，一邊以一定速度送出研磨帶23(23a、23b), —邊以一定壓力加壓於基板周緣up並實施研磨，修整如圖6D所示之基板剖面圖。該情形，除利用藉由第2研磨帶23b之機械效果的研磨以外，並行進行利用藉由第1研磨帶23a之化學效果的研磨。因此，可以有效率地研磨應去除之金屬矽化膜之周邊的SiN膜，進而確實地進行金屬矽化膜之研磨去除。相對於過去技術之鑽石粗磨粒（#4〇〇〇)與修整用磨粒 (# 1 0000)之組合，於同一研磨條件下研磨時，研磨時間縮短至2/3。再者，於過去技術所觀察到之因粗磨粒之鑽石造成之研磨損傷消失，表面粗糙度改善至1/3 ◊在此，表面粗糙度改善係由於鑽石僅用於修整用磨粒，而未用粗磨粒再者，儘管未使用鑽石之粗磨粒而研磨時間縮短係由 130431.doc 17 ^54598 藉使用固定粘著有二氧化鈽磨粒之研磨帶23a，可以 s. r 有效地去除基板周緣部之金屬石夕化膜之周邊的本實施形態，顯示使用氮化膜⑶氮化膜系）作為遮罩之 ^然而亦可用氧化膜⑶氧化膜系）。又，使用於在石夕化 ⑼成後形成氧化膜或氮化膜’暫時抑制金屬對其他程序之巧染後’同時去除石夕化膜與氧化膜或氮化膜之情形，亦可獲得研磨時間之縮短與表面⑽度之改善效果。 (變形例）本發月非限疋於上述各實施形態。實施形態中，作為基板周緣部之無用膜顯示為SiOASiN’但未必限定於此/，例如亦可適用於Si〇c、SiCN。換言之可適用氧化石夕系、氮化矽系之無用膜。又’除氧化石夕系膜或氮化石夕系膜以外，用二氧化飾磨粒之研磨帶難以進行研磨去除之材料，例如單結晶石夕、非晶石夕、多晶碎、及向該等料人雜f之⑦系膜、碳臈、、m鈦、组、給、及含有該等材料之化合物）以上層、下層、或混合層進行研磨去除時，組合具有機械之研磨去除能力之鑽石#之練為有效。實施形態中，作為對於氧化石夕系或氮化石夕系之膜且有化學效果之磨粒雖使用二氧化鈽粒子，然而代替二氧化鈽粒子亦可使用二氧切粒子。再者，代替鑽石粒子亦可使用 SiC粒子。實施形態說明了利用使用以具有化學效果之粒子作為主 130431.doc -18- UM598 麸刀之磨粒作為研磨之研磨帶的固定磨粒方式加以說明，亦可I彡於研磨面與被研磨面之接觸面供給含有研 /子之研磨劑，一邊進行研磨之游離磨粒方式。再者， :由使用鑽石磨粒之機械效果的研磨之際，不限於固定磨粒方式’亦可採用游離磨粒方式。Next, as shown in FIG. 6B, for example, a metal (c〇) is deposited by a sputtering method, and a metal film ((: 〇 film) 6 is formed on the exposed portions of the SiN film 12 and the substrate 1 ,, and then heat treatment is performed. As shown in FIG. 6C, only the surface of the substrate si exposed at the opening portion reacts with the metal to form a vaporized film ((: 〇8丨貘) 62. The unreacted metal film 61 is removed by etching or the like. When the application of the resist film to the peripheral portion of the ruthenium substrate 10 is not sufficiently performed, the substrate Si may be exposed on the peripheral edge portion when the opening portion is formed on the ruthenium substrate 1A. The substrate is deposited in a state where the substrate is exposed to the peripheral portion. When the metal film is subjected to heat treatment, Si exposed to the peripheral portion reacts with the metal to form a metal film such as a vaporized film, and the reactant "has a metal contamination by the peripheral portion of the substrate 1". 130431.doc 16 1354598 In order to prevent the metal contamination, it is preferable to remove the metallization film 62 and the SiN film 12 at the peripheral portion after the formation of a reactant such as a vaporized film. Here, the SiN film 12 at the peripheral portion of the substrate is removed, as shown in Fig. 6C. Known that it is due to the periphery of the polished substrate When the metal vaporized film 62 is used, the SiN film 12 in the periphery becomes an obstacle. That is, if the film 12 remains in the periphery of the metal film 62, the polishing of the metal film 62 by the mechanical effect cannot be progressed. The metal contamination generated in the peripheral portion of the substrate will be described using the results of the present embodiment. The first polishing tape 23a to which the cerium oxide abrasive grains are fixed and adhered and the diamond polishing machine for fixing are adhered as described in the above embodiment. The polishing method of the second polishing tape 2 3 b combination of the pellets. The substrate 2 to be processed is sucked onto the stage 21 by the polishing apparatus shown in Fig. 4, and the stage 21 is rotated at a constant speed. The polishing tape 23 (23a, 23b) is fed at a constant speed, and is pressed against the peripheral edge of the substrate by a certain pressure and polished, and the cross-sectional view of the substrate as shown in Fig. 6D is trimmed. In this case, the second polishing tape 23b is used. In addition to the polishing of the mechanical effect, the polishing by the chemical effect of the first polishing tape 23a is performed in parallel. Therefore, the SiN film around the metal deuterated film to be removed can be efficiently polished, and the gold can be surely performed. Grinding and removal of bismuth film. Compared with the combination of diamond coarse abrasive grain (#4〇〇〇) and trimming abrasive grain (#1 0000) in the past technology, the grinding time is shortened to 2/3 when grinding under the same grinding conditions. Furthermore, the grinding damage caused by the coarse-grained diamond observed in the past technology disappears, and the surface roughness is improved to 1/3. Here, the surface roughness is improved because the diamond is only used for dressing abrasive grains. However, if the coarse abrasive grains are not used, the grinding time is shortened by using the coarse abrasive grains of the diamond, and the grinding belt 23a which is fixedly adhered with the cerium oxide abrasive grains can be effectively used by 130431.doc 17 ^54598. In the present embodiment in which the periphery of the metallization film of the peripheral portion of the substrate is removed, the nitride film (3) is used as a mask, but the oxide film (3) may be used as the mask. Moreover, it is also used in the case where an oxide film or a nitride film is formed after the formation of Shi Xihua (9) to temporarily suppress the metal from being dyed by other processes, and the stone etching film and the oxide film or the nitride film are simultaneously removed. Shortening of time and improvement of surface (10) degrees. (Modification) This month is not limited to the above embodiments. In the embodiment, the unnecessary film as the peripheral portion of the substrate is shown as SiOASiN', but is not necessarily limited thereto, and may be applied to, for example, Si〇c or SiCN. In other words, an unnecessary film of oxidized cerium or tantalum nitride can be applied. Further, in addition to the oxidized cerium film or the cerium nitride film, a material which is difficult to be polished by a polishing belt of a oxidized abrasive grain, such as a single crystal stone, an amorphous stone, a polycrystalline powder, and the like Combining diamonds with mechanical grinding removal ability when grinding, removing the upper layer, the lower layer, or the mixed layer of the 7-layer film, carbon ruthenium, m-titanium, group, and the compound containing the materials #练练 effective. In the embodiment, cerium oxide particles are used as the abrasive grains for the oxidized stone or the cerium nitride film, but dioxin particles may be used instead of the cerium oxide particles. Further, SiC particles can also be used instead of the diamond particles. The embodiment describes the use of a fixed abrasive method using abrasive particles having a chemical effect as the main 130431.doc -18- UM598 bran as a polishing belt, and may also be applied to the polished surface and the polished surface. The contact surface is supplied with a free abrasive method which is subjected to grinding while containing an abrasive of a mortar. Further, when the polishing is performed by the mechanical effect using the diamond abrasive grains, it is not limited to the fixed abrasive method, and the free abrasive method may be employed.

具體而言，如圖7所示’亦可使固定於研磨頭71之不織布72接觸於吸著在台21上之被處理基板2()之周緣部且從噴嘴73向基板2〇之周邊附近供給含有以二氧化鈽粒子等為主成分之磨㈣研磨液’於與不織布72之接觸部研磨基板 =緣部。該情形’ #由併用鑽石磨粒之研磨亦可獲得與之刖之實施形態相同的效果。在此，從噴嘴73供給者為含有以具有化學效果之粒子為主成》之磨粒的研磨&，非與基板Si反應之藥液。因此，可以避免基板表面㈣等之不適宜之處。又，實施形態說明了於研磨半導體基板之端部，剖面有曲率之部分的斜面部之例，然而亦可適用用以辨識於與基板周邊之一部分對準時之符號或晶圓主面上之結晶方位所設之凹口部之研磨。再者，半導體基板並非限定於si，亦可使用其他半導體材料。本發明之其他優點及改良對熟知本技藝者將為易了解者。因此，本發明之較廣範圍並未限於本文所述之特定細節及代表實施形態。據此，在不脫離本發明所附申請專利範圍及其均等範圍所界定之一般發明概念之精神或範圍之下，可對本發明做各種改良。 I30431.doc -19- 1354598 【圖式簡單說明】圖ΙΑ、1B係第1實施形態之基板處理 ^邵的剖面圖；圖2係第1實施形態使用之固定磨粒方略構成圖；：研磨裝置的概 3B係圖2之研磨褒置中所使用之研磨帶之例的剖Specifically, as shown in FIG. 7, the non-woven fabric 72 fixed to the polishing head 71 may be in contact with the peripheral edge portion of the substrate 2 to be processed which is sucked on the stage 21, and from the vicinity of the nozzle 73 to the periphery of the substrate 2 The polishing (four) polishing liquid containing the main component of the cerium oxide particles or the like is supplied to the substrate at the contact portion with the nonwoven fabric 72 to the edge portion. In this case, the same effect as the embodiment of the crucible can be obtained by the grinding with the diamond abrasive grains. Here, the supplier from the nozzle 73 is a polishing material containing abrasive particles having a chemical effect as a main component, and a chemical liquid which does not react with the substrate Si. Therefore, it is possible to avoid the disadvantage of the substrate surface (four) and the like. Further, although the embodiment describes an example of a beveled surface in which the end portion of the semiconductor substrate is polished and has a portion having a curvature, it may be applied to identify a symbol when aligned with a portion of the periphery of the substrate or crystal on the main surface of the wafer. Grinding of the notch provided by the orientation. Further, the semiconductor substrate is not limited to si, and other semiconductor materials may be used. Other advantages and modifications of the present invention will be readily apparent to those skilled in the art. Therefore, the broader aspects of the invention are not intended to Accordingly, various modifications of the invention can be made without departing from the spirit and scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 2B is a cross-sectional view of a substrate processing of the first embodiment; FIG. 2 is a schematic view of a fixed abrasive grain used in the first embodiment; Section 3B is a section of the polishing belt used in the polishing apparatus of Fig. 2.

圖4係第i實施形態中使用之固定磨粒方式之研磨裝置之另—例的概略構成圖；圖5 A〜5C係第2實施形態之基板處理步驟的剖面圖；圖6A〜6D係第3實施形態之基板處理步驟的剖面圖；圖7係本發明之變形例之游離磨粒方式之研磨裝置的概略構成圖。【主要元件符號說明】 10 基板 11 Si02 膜 12 SiN膜 13 針狀突起 20 被處理基板 21 台 22 發動機 23 研磨帶 23a 研磨帶 23b 研磨帶 24 研磨頭Fig. 4 is a schematic view showing another example of a polishing apparatus of a fixed abrasive type used in the first embodiment; Figs. 5A to 5C are cross-sectional views showing a substrate processing step of the second embodiment; Figs. 6A to 6D are drawings. 3 is a cross-sectional view of a substrate processing step of the embodiment; and FIG. 7 is a schematic configuration diagram of a polishing apparatus of a free abrasive type according to a modification of the present invention. [Main component symbol description] 10 Substrate 11 Si02 film 12 SiN film 13 Needle-like protrusion 20 Substrate to be processed 21 Table 22 Engine 23 Abrasive tape 23a Abrasive tape 23b Abrasive tape 24 Abrasive head

圖3A 面圖； 130431.doc -20-Figure 3A side view; 130431.doc -20-

Claims

1354598 ㈨年&月9口修正替換頁 - ——一·· -*J 第097112893號專利申請案中文申請專利範圍替換本(1〇〇年6月）十、申請專利範圍： 1. 一種研磨基板周緣部之基板處理方法，包括：於包含形成有膜之表面之半導體基板之周緣部與固定有磨粒之第1研磨面接觸之狀態下，藉由滑動上述基板與上述第1研磨面，而研磨上述基板之周緣部，至上述表面之一部分露出為上述磨粒係以對於氧化石夕系或氮化矽系之膜具有化學反應效果之粒子作為主成分；在上述表面之一部分露出後，於上述基板之周緣部與固定有磨粒之第2研磨面接觸之狀態下，藉由滑動上述基板與上述第2研磨面，而研磨上述基板之周緣部，上述磨粒係以機械效果為主體。 2. 如請求項1之基板處理方法，其中固定於上述第丨研磨面之磨粒係以二氧化鈽為主成分，固定於上述第2研磨面之磨粒以鑽石或SiC為主成分。 3. 如請求項丨之基板處理方法，其中使上述基板旋轉之同時，使上述第1研磨面及上述第2研磨面兩者接觸該基板之周緣部，並行進行利用上述第丨研磨面之研磨與利用上述第2研磨面之研磨。 4. 如請求項1之基板處理方法，其中旋轉上述基板並進行利用上述第1研磨面之研磨後，一面旋轉上述基板並一面進行利用上述第2研磨面之研磨。 5. 如請求項1之基板處理方法，其中一面旋轉上述基板，並一面交替進行利用上述第丨研磨面之研磨與利用上述第2研磨面之研磨。 13043M000607.doc 1354598 6. 7. 8. 9. 10. j|a〇年1月夕日修(冢)正替換頁如請求項1之基板處理方法，其中上述基板係Si。如明求項1之基板處理方法 -g- Oj μ Jr- 处&力/ί:，其中上述基板之周緣部係於上述基板之端部之剖面具有曲率之斜面部或設於上述基板之周邊之一部分的凹口部。如請求項1之基板處理方法’其中藉由利用上述第i研磨面之研磨及上述第2研磨面之研磨，以去除上述基板之周緣部的無用膜及針狀突起。如请求項8之基板處理方法，其中上述無用膜係si〇 SiN、SiOC、或 SiCN。如研求項1之基板處理方法，其中藉由利用上述第〗研磨面之研磨及利用上述第2研磨面之研磨，去除上述基板之周緣部的氧化矽系或氮化矽系之膜、及矽系膜碳膜 '金屬膜或金屬石夕化膜。如咕求項1之基板處理方法，其中上述第丨研磨面係第i 研磨帶之表面，上述第2研磨面係第2研磨帶之表面，各個研磨帶係由研磨頭按壓於上述半導體基板側。一種研磨基板周緣部之基板處理方法，包括：使用含有以對於氧化矽系或氮化矽系之膜具有化學反應效果之粒子為主成分之磨粒之第丨研磨液，研磨包含形成有膜之表面之半導體基板之周緣部，至上述表面之一部分露出為止；在上述表面之一部分露出後，使用含有以機械效果為主體之磨粒之第2研磨液，研磨上述半導體基板之周緣部。1354598 (9) Year & Month 9 Amendment Replacement Page - ——一·· -*J Patent Application No. 097112893 Replacement of Chinese Patent Application (June 1st, 2010) X. Application Patent Range: 1. A kind of grinding The substrate processing method of the peripheral portion of the substrate includes: sliding the substrate and the first polishing surface in a state where a peripheral portion of the semiconductor substrate including the surface on which the film is formed is in contact with the first polishing surface to which the abrasive grains are fixed; While polishing the peripheral portion of the substrate, a portion of the surface is exposed such that the abrasive particles have a chemical reaction effect on a film of the oxidized or yttrium-based film as a main component; after a part of the surface is exposed, In a state where the peripheral portion of the substrate is in contact with the second polishing surface to which the abrasive grains are fixed, the peripheral portion of the substrate is polished by sliding the substrate and the second polishing surface, and the abrasive grain is mainly mechanical. . 2. The substrate processing method according to claim 1, wherein the abrasive grains fixed to the second polishing surface are mainly composed of cerium oxide, and the abrasive grains fixed to the second polishing surface are mainly composed of diamond or SiC. 3. The substrate processing method according to claim 2, wherein the first polishing surface and the second polishing surface are brought into contact with a peripheral portion of the substrate while the substrate is rotated, and polishing by the second polishing surface is performed in parallel And polishing using the second polishing surface. 4. The substrate processing method according to claim 1, wherein the substrate is rotated and polished by the first polishing surface, and the substrate is rotated while polishing on the second polishing surface. 5. The substrate processing method according to claim 1, wherein the substrate is rotated while the polishing by the second polishing surface and the polishing using the second polishing surface are alternately performed. 13043M000607.doc 1354598 6. 7. 8. 9. 10. j|a 1 1 1 修正正正如如如如如如如如如如如如如如如如如如如如如如如如如如如如The substrate processing method of the first aspect of the present invention, wherein the peripheral portion of the substrate is a slope portion having a curvature at a portion of the end portion of the substrate or is provided on the substrate a notch in one part of the perimeter. The substrate processing method of claim 1, wherein the unnecessary film and the needle-like projections on the peripheral portion of the substrate are removed by polishing the ith polishing surface and polishing the second polishing surface. The substrate processing method of claim 8, wherein the unnecessary film is Si〇SiN, SiOC, or SiCN. The substrate processing method according to claim 1, wherein the yttrium oxide-based or tantalum nitride-based film is removed from the peripheral portion of the substrate by polishing the polishing surface and polishing the second polishing surface. Lanthanide film carbon film 'metal film or metal stone night film. The substrate processing method according to claim 1, wherein the second polishing surface is a surface of the i-th polishing tape, and the second polishing surface is a surface of the second polishing tape, and each polishing tape is pressed by the polishing head to the semiconductor substrate side. . A substrate processing method for polishing a peripheral portion of a substrate, comprising: using a second etching liquid containing abrasive particles having a chemical reaction effect on a cerium oxide-based or tantalum nitride-based film as a main component, and polishing comprises forming a film The peripheral portion of the surface of the semiconductor substrate is exposed to one of the surfaces, and after exposing one of the surfaces, the peripheral portion of the semiconductor substrate is polished using a second polishing liquid containing abrasive grains mainly composed of mechanical effects.

11. 12.11. 12.

130431-1000607.doc 1354598 卜“月々日修 13. 如請求項12之基板處理方法其中使用上述第1、第2之研磨液之研磨’係使研磨面分別接觸上述基板之周緣部，並於上述基板之周緣部與上述研磨面之接觸部分供給上述第1、第2研磨液。其中上述第1研磨液含有上述第2研磨液含有以鑽其中藉由利用上述第1研 14. 如請求項12之基板處理方法以一氧化鈽為主成分之磨粒石或SiC為主成分之磨粒。 15. 如請求項a之基板處理方法磨液之研磨及上述第2研磨液之研磨，以去除上述基板之周緣部的無用膜及針狀突起。 16. —種研磨基板周緣部之基板處理方法包括：使用3有以對於氧化石夕系或氮化石夕系之膜具有化學效果之粒子為主成分之磨粒之研磨液，或於固定有該磨粒 2磨面’使包含形成有膜之表面之半導體基板之周緣㈣之接觸’而研磨上述基板之周緣部，至上述表面之一部分露出為止；主^上述表面之—部分露出後，使用含有以機械效果為體之磨粒之研磨液，或於固定有該磨粒之研磨面周上=導體基板之周緣部與之接觸，而研磨上述基板之 ΐ7.Π=:基板處理方法，其中以具有上述化學效果為成分之磨粒係以二氧化飾作為主成分，以上為主成分化方法’其中藉由利用以上述二氧成分之磨粒之研磨’及利用以上述鑽石或Sic 130431-1000607.doc ^M598„ . - - -- —---- __二卞月正替換頁I 為主成分之磨粒的研磨，以去除上述基板之周緣部的益用膜及針狀突起。其中上述基板係Si。其中上述基板之周緣部係曲率之斜面部，或設於上部〇 Ϊ9.如請求項I6之基板處理方法， 20.如請求項I6之基板處理方法，於上述基板之端部之剖面具有述基板之周邊之一部分的凹口 130431-1000607.doc130431-1000607.doc 1354598 </ br> </ RTI> <RTIgt; </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> The substrate processing method of claim 12, wherein the polishing of the first and second polishing liquids is performed by contacting the polishing surface with the peripheral portion of the substrate The first and second polishing liquids are supplied to a portion where the peripheral portion of the substrate and the polishing surface are in contact with each other. The first polishing liquid contains the second polishing liquid to be used for drilling by using the first research. The substrate treatment method is abrasive grains containing yttria as a main component or SiC as a main component. 15. The substrate treatment method of claim a is a grinding of the grinding liquid and the polishing of the second polishing liquid to remove the above An unnecessary film and a needle-like projection on the peripheral portion of the substrate. 16. A substrate processing method for polishing a peripheral portion of a substrate, comprising: using a particle having a chemical effect on a film of oxidized stone or cerium oxide as a main component Grinding the abrasive slurry, or fixing the peripheral surface of the substrate by the contact of the abrasive particle 2 to the periphery (4) of the semiconductor substrate including the surface on which the film is formed, to One part of the surface is exposed; after the surface of the main surface is exposed, a polishing liquid containing abrasive grains having a mechanical effect or a peripheral surface of the polishing surface to which the abrasive grains are fixed = a peripheral portion of the conductor substrate and In the case of the above-mentioned substrate, the above-mentioned substrate is polished. 7. The substrate processing method is characterized in that the abrasive particles having the chemical effect as a component are mainly composed of a oxidized garnish as a main component, and the above is a main component method. Grinding of the abrasive particles of the dioxane component and the use of the above-mentioned diamond or Sic 130431-1000607.doc ^M598„ . - - -- ------ __ 二卞月 Replacement of the grinding of the abrasive particles of the main component The benefit film and the acicular protrusions on the peripheral portion of the substrate are removed. Wherein the above substrate is Si. A substrate having a curvature of a peripheral portion of the substrate, or a substrate processing method according to claim 1, wherein the substrate processing method of claim I6, wherein the substrate has a substrate at a portion of the substrate a notch of one of the surrounding parts 130431-1000607.doc