TWI349378B - Semiconductor light generating device - Google Patents

Semiconductor light generating device

Info

Publication number
TWI349378B
TWI349378B TW094100879A TW94100879A TWI349378B TW I349378 B TWI349378 B TW I349378B TW 094100879 A TW094100879 A TW 094100879A TW 94100879 A TW94100879 A TW 94100879A TW I349378 B TWI349378 B TW I349378B
Authority
TW
Taiwan
Prior art keywords
generating device
semiconductor light
light generating
semiconductor
light
Prior art date
Application number
TW094100879A
Other languages
Chinese (zh)
Other versions
TW200536148A (en
Inventor
Katsushi Akita
Takao Nakamura
Hideki Hirayama
Original Assignee
Sumitomo Electric Industries
Riken
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries, Riken filed Critical Sumitomo Electric Industries
Publication of TW200536148A publication Critical patent/TW200536148A/en
Application granted granted Critical
Publication of TWI349378B publication Critical patent/TWI349378B/en

Links

Classifications

    • E—FIXED CONSTRUCTIONS
    • E03—WATER SUPPLY; SEWERAGE
    • E03F—SEWERS; CESSPOOLS
    • E03F3/00—Sewer pipe-line systems
    • E03F3/04—Pipes or fittings specially adapted to sewers
    • E03F3/043—Partitioned to allow more than one medium to flow through
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Hydrology & Water Resources (AREA)
  • Public Health (AREA)
  • Water Supply & Treatment (AREA)
  • Led Devices (AREA)
TW094100879A 2004-01-14 2005-01-12 Semiconductor light generating device TWI349378B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004007325A JP2005203520A (en) 2004-01-14 2004-01-14 Semiconductor light emitting element

Publications (2)

Publication Number Publication Date
TW200536148A TW200536148A (en) 2005-11-01
TWI349378B true TWI349378B (en) 2011-09-21

Family

ID=34616875

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094100879A TWI349378B (en) 2004-01-14 2005-01-12 Semiconductor light generating device

Country Status (6)

Country Link
US (2) US7294867B2 (en)
EP (1) EP1555697A3 (en)
JP (1) JP2005203520A (en)
KR (1) KR101108803B1 (en)
CN (1) CN100472825C (en)
TW (1) TWI349378B (en)

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WO2007124723A1 (en) * 2006-05-02 2007-11-08 Osram Opto Semiconductors Gmbh Optoelectronic semi-conductor component
US20080303033A1 (en) * 2007-06-05 2008-12-11 Cree, Inc. Formation of nitride-based optoelectronic and electronic device structures on lattice-matched substrates
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KR101283233B1 (en) * 2007-06-25 2013-07-11 엘지이노텍 주식회사 Light emitting device and method for manufacturing the same
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KR100961109B1 (en) * 2008-02-11 2010-06-07 삼성엘이디 주식회사 GaN-based semiconductor light emitting device
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KR101007087B1 (en) * 2009-10-26 2011-01-10 엘지이노텍 주식회사 Light emitting device and fabrication method thereof
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CN102214753A (en) * 2011-06-02 2011-10-12 中国科学院半导体研究所 LED (light-emitting diode) with GaN (gallium nitride)-based vertical structure using grapheme film current extension layer
US8648384B2 (en) * 2011-07-25 2014-02-11 Lg Innotek Co., Ltd. Light emitting device
US9171826B2 (en) * 2012-09-04 2015-10-27 Micron Technology, Inc. High voltage solid-state transducers and solid-state transducer arrays having electrical cross-connections and associated systems and methods
KR20140037482A (en) * 2012-09-19 2014-03-27 엘지이노텍 주식회사 Light emitting device
TWI495154B (en) 2012-12-06 2015-08-01 Genesis Photonics Inc Semiconductor structure
JP6001446B2 (en) 2012-12-28 2016-10-05 株式会社東芝 Semiconductor light emitting device and manufacturing method thereof
JPWO2014178248A1 (en) 2013-04-30 2017-02-23 シャープ株式会社 Nitride semiconductor light emitting device
JP6004203B2 (en) * 2014-07-02 2016-10-05 ウシオ電機株式会社 Semiconductor light emitting device and manufacturing method thereof
JP6573076B2 (en) 2016-02-01 2019-09-11 パナソニック株式会社 UV light emitting device
JP6831375B2 (en) * 2016-05-13 2021-02-17 ヌヴォトンテクノロジージャパン株式会社 Nitride-based light emitting device
TWI703726B (en) 2016-09-19 2020-09-01 新世紀光電股份有限公司 Semiconductor device containing nitrogen
DE102017120302A1 (en) * 2017-09-04 2019-03-07 Osram Opto Semiconductors Gmbh Semiconductor body and method for producing a semiconductor body
CN110473941A (en) * 2019-05-24 2019-11-19 华南师范大学 A kind of AlGaN base ultraviolet LED epitaxial structure
CN115498083A (en) * 2022-10-24 2022-12-20 淮安澳洋顺昌光电技术有限公司 Light emitting diode epitaxial structure and light emitting diode

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Also Published As

Publication number Publication date
JP2005203520A (en) 2005-07-28
KR20050074918A (en) 2005-07-19
US7508011B2 (en) 2009-03-24
EP1555697A2 (en) 2005-07-20
TW200536148A (en) 2005-11-01
CN100472825C (en) 2009-03-25
US7294867B2 (en) 2007-11-13
EP1555697A3 (en) 2011-03-09
US20080076199A1 (en) 2008-03-27
CN1641900A (en) 2005-07-20
KR101108803B1 (en) 2012-01-31
US20050151154A1 (en) 2005-07-14

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees