TWI341174B - Radiation shielding circuit, memory device, and manufacturing method thereof - Google Patents
Radiation shielding circuit, memory device, and manufacturing method thereofInfo
- Publication number
- TWI341174B TWI341174B TW094133963A TW94133963A TWI341174B TW I341174 B TWI341174 B TW I341174B TW 094133963 A TW094133963 A TW 094133963A TW 94133963 A TW94133963 A TW 94133963A TW I341174 B TWI341174 B TW I341174B
- Authority
- TW
- Taiwan
- Prior art keywords
- manufacturing
- memory device
- radiation shielding
- shielding circuit
- circuit
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5225—Shielding layers formed together with wiring layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/089,969 US7545662B2 (en) | 2005-03-25 | 2005-03-25 | Method and system for magnetic shielding in semiconductor integrated circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200635496A TW200635496A (en) | 2006-10-01 |
TWI341174B true TWI341174B (en) | 2011-04-21 |
Family
ID=37084065
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094133963A TWI341174B (en) | 2005-03-25 | 2005-09-29 | Radiation shielding circuit, memory device, and manufacturing method thereof |
Country Status (2)
Country | Link |
---|---|
US (1) | US7545662B2 (zh) |
TW (1) | TWI341174B (zh) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7427803B2 (en) * | 2006-09-22 | 2008-09-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Electromagnetic shielding using through-silicon vias |
US7936052B2 (en) * | 2008-09-30 | 2011-05-03 | Infineon Technologies Ag | On-chip RF shields with backside redistribution lines |
US8169059B2 (en) * | 2008-09-30 | 2012-05-01 | Infineon Technologies Ag | On-chip RF shields with through substrate conductors |
US7948064B2 (en) * | 2008-09-30 | 2011-05-24 | Infineon Technologies Ag | System on a chip with on-chip RF shield |
US8889548B2 (en) | 2008-09-30 | 2014-11-18 | Infineon Technologies Ag | On-chip RF shields with backside redistribution lines |
US8178953B2 (en) | 2008-09-30 | 2012-05-15 | Infineon Technologies Ag | On-chip RF shields with front side redistribution lines |
US8063469B2 (en) * | 2008-09-30 | 2011-11-22 | Infineon Technologies Ag | On-chip radio frequency shield with interconnect metallization |
JP5408253B2 (ja) * | 2009-06-17 | 2014-02-05 | 日本電気株式会社 | Icパッケージ |
KR101677739B1 (ko) * | 2010-09-29 | 2016-11-21 | 삼성전자주식회사 | 반도체 패키지 및 그의 제조방법 |
TWI456726B (zh) | 2011-01-24 | 2014-10-11 | Ind Tech Res Inst | 內連線結構、具有該內連線結構的裝置與線路結構、及防護內連線結構電磁干擾(emi)的方法 |
US8557610B2 (en) | 2011-02-14 | 2013-10-15 | Qualcomm Incorporated | Methods of integrated shielding into MTJ device for MRAM |
US9318432B2 (en) * | 2012-10-31 | 2016-04-19 | Qualcomm Technologies International, Ltd. | Shielded system |
US9070692B2 (en) | 2013-01-12 | 2015-06-30 | Avalanche Technology, Inc. | Shields for magnetic memory chip packages |
US8952504B2 (en) * | 2013-02-08 | 2015-02-10 | Qualcomm Incorporated | Small form factor magnetic shield for magnetorestrictive random access memory (MRAM) |
US10510946B2 (en) | 2015-07-23 | 2019-12-17 | Globalfoundries Singapore Pte. Ltd. | MRAM chip magnetic shielding |
US9875971B2 (en) | 2015-03-26 | 2018-01-23 | Globalfoundries Singapore Pte. Ltd. | Magnetic shielding of MRAM package |
US10475985B2 (en) | 2015-03-26 | 2019-11-12 | Globalfoundries Singapore Pte. Ltd. | MRAM magnetic shielding with fan-out wafer level packaging |
US9666257B2 (en) * | 2015-04-24 | 2017-05-30 | Intel Corporation | Bitcell state retention |
US10096768B2 (en) | 2015-05-26 | 2018-10-09 | Globalfoundries Singapore Pte. Ltd. | Magnetic shielding for MTJ device or bit |
US9786839B2 (en) | 2015-07-23 | 2017-10-10 | Globalfoundries Singapore Pte. Ltd. | 3D MRAM with through silicon vias or through silicon trenches magnetic shielding |
WO2017025815A1 (en) * | 2015-08-11 | 2017-02-16 | Kabushiki Kaisha Toshiba | Magnetic shield tray, magnetic shield wrapper and magnetic memory product shielded from external magnetic field |
US11619658B2 (en) | 2017-12-08 | 2023-04-04 | Texas Instruments Incorporated | Semiconductor integrated fluxgate device shielded by discrete magnetic plate |
US10374154B1 (en) * | 2018-01-18 | 2019-08-06 | Globalfoundries Inc. | Methods of shielding an embedded MRAM array on an integrated circuit product comprising CMOS based transistors |
US10439129B2 (en) | 2018-01-18 | 2019-10-08 | Globalfoundries Inc. | Shielded MRAM cell |
WO2020071491A1 (ja) * | 2018-10-05 | 2020-04-09 | 株式会社村田製作所 | モジュール |
US11276649B2 (en) * | 2019-06-28 | 2022-03-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Devices and methods having magnetic shielding layer |
US11258356B2 (en) | 2019-07-31 | 2022-02-22 | Analog Devices International Unlimited Company | Magnetic barrier for power module |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6872993B1 (en) * | 1999-05-25 | 2005-03-29 | Micron Technology, Inc. | Thin film memory device having local and external magnetic shielding |
JP3505488B2 (ja) * | 1999-10-12 | 2004-03-08 | 古河電気工業株式会社 | 光モジュール |
EP1297533B1 (en) * | 2000-06-23 | 2008-08-27 | Nxp B.V. | Magnetic memory |
US6555858B1 (en) * | 2000-11-15 | 2003-04-29 | Motorola, Inc. | Self-aligned magnetic clad write line and its method of formation |
US6582979B2 (en) * | 2000-11-15 | 2003-06-24 | Skyworks Solutions, Inc. | Structure and method for fabrication of a leadless chip carrier with embedded antenna |
TW569442B (en) * | 2001-12-18 | 2004-01-01 | Toshiba Corp | Magnetic memory device having magnetic shield layer, and manufacturing method thereof |
US7037604B2 (en) * | 2002-07-23 | 2006-05-02 | Honeywell International, Inc. | Magnetic sensing device |
US20040032010A1 (en) * | 2002-08-14 | 2004-02-19 | Kools Jacques Constant Stefan | Amorphous soft magnetic shielding and keeper for MRAM devices |
US6808940B2 (en) * | 2002-08-30 | 2004-10-26 | Hewlett-Packard Development Company, L.P. | Magnetic shielding for reducing magnetic interference |
US6940153B2 (en) * | 2003-02-05 | 2005-09-06 | Hewlett-Packard Development Company, L.P. | Magnetic shielding for magnetic random access memory card |
US6970053B2 (en) * | 2003-05-22 | 2005-11-29 | Micron Technology, Inc. | Atomic layer deposition (ALD) high permeability layered magnetic films to reduce noise in high speed interconnection |
US7477538B2 (en) * | 2003-06-20 | 2009-01-13 | Nec Corporation | Magnetic random access memory |
US7030469B2 (en) * | 2003-09-25 | 2006-04-18 | Freescale Semiconductor, Inc. | Method of forming a semiconductor package and structure thereof |
-
2005
- 2005-03-25 US US11/089,969 patent/US7545662B2/en active Active
- 2005-09-29 TW TW094133963A patent/TWI341174B/zh active
Also Published As
Publication number | Publication date |
---|---|
US7545662B2 (en) | 2009-06-09 |
TW200635496A (en) | 2006-10-01 |
US20060229683A1 (en) | 2006-10-12 |
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