TWI340456B - Dram unit structure - Google Patents
Dram unit structureInfo
- Publication number
- TWI340456B TWI340456B TW096114621A TW96114621A TWI340456B TW I340456 B TWI340456 B TW I340456B TW 096114621 A TW096114621 A TW 096114621A TW 96114621 A TW96114621 A TW 96114621A TW I340456 B TWI340456 B TW I340456B
- Authority
- TW
- Taiwan
- Prior art keywords
- unit structure
- dram unit
- dram
- unit
- Prior art date
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW096114621A TWI340456B (en) | 2007-04-25 | 2007-04-25 | Dram unit structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW096114621A TWI340456B (en) | 2007-04-25 | 2007-04-25 | Dram unit structure |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200843088A TW200843088A (en) | 2008-11-01 |
TWI340456B true TWI340456B (en) | 2011-04-11 |
Family
ID=44822210
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096114621A TWI340456B (en) | 2007-04-25 | 2007-04-25 | Dram unit structure |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI340456B (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120256255A1 (en) * | 2011-04-07 | 2012-10-11 | Tieh-Chiang Wu | Recessed trench gate structure and method of fabricating the same |
KR102471277B1 (en) * | 2018-09-19 | 2022-11-28 | 삼성전자주식회사 | Semiconductor device having gate insulating layer |
CN110265398B (en) * | 2019-06-28 | 2023-04-18 | 芯盟科技有限公司 | Memory and forming method thereof |
-
2007
- 2007-04-25 TW TW096114621A patent/TWI340456B/en active
Also Published As
Publication number | Publication date |
---|---|
TW200843088A (en) | 2008-11-01 |
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