1337363 99-12-21 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種射頻積體電路元件，且特別是有關 於一種三維變壓器。 【先前技#Ϊ】 近年來無線通訊的普及化與方便性使射頻積體電路 的需求愈來愈高。在設計互補式金氧半導體(CMOS)射頻電 路中，除了主動元件的高頻特性不易掌握外，電感也是一 個重要的元件。由於CMOS基板為高耗損性基板，因此電 感特性相當不易掌握。傳統CM〇s射頻電路中所使用的電 感架構是承襲在GaAs電路所使用的平面架構，其缺點便 是面積過大，而這造會成所設計出的射頻電路面積過大， 成本增加。 一變壓器(Transformer)也是射頻積體電路中不可或缺的 元件之一，近年來陸續有許多研究利用變壓器取代電感 設=電路，其域*但可以節省晶片_，更可以達 ，壓的應用。細，隨著元件的小型化，傳統平面型變屨 器所佔面積過大已不符合所需。 【發明内容】 壓器 本發明提供-種提綠合率並可節省；面積之三 維變 5 1337363 99-12-21 線。第一線圈之各層金屬線與第二線圈之各層金屬線相對應配 置。並且第一線圈是以其第一埠連接頂層金屬線 ，且自頂層金 屬線、中騎金屬線之_金驗至底層金屬狀第—端電性 連接且以一時針方向繞行而下，且自底層金屬線之第二端至中 間f金屬線之最上層外圍金屬線電性連接且以同-時針方向 上再連接其第二埠。第二、_是以其第—阜連接頂層 且自頂層金屬線、巾職金屬線之⑽金屬線至底層 層金屬性t接且以上述時針方向繞行而下，且自底 連接且㈣—1^至中間層金屬線之最上層外圍金屬線電性 :及第二線圈以上述時針方向繞行而 -圈的-部分。第-線圈以及第二線圈以時針 凡丁第一線圈以及第二線圈亦分別繞-圈的-二八 順時針方向。 ^心中，上述時針方向為 依照本發明實施例所述之三維 為逆時針方向。 中上述時針方向 =照本發明實施例所述之三維變壓 一線圈之長度相等。 弟線圈與苐 ^照本發明實施_述之三維賴 圈與第二線圈之長度相等。 合層之弟—線 -依照本發明實施例所述之三維變壓 一線圈之長度成一比例。 °第線圈與第 依照本發明實施例所述之三維變_中，第—線圈q 1357363 99-12-21 度與第二線圈之寬度相等。 依照本發明實施綱述之三維髓器巾，第—線圈 質與第二線圈之材質相同。1337363 99-12-21 IX. Description of the Invention: [Technical Field] The present invention relates to a radio frequency integrated circuit component, and more particularly to a three-dimensional transformer. [Previous technology #Ϊ] In recent years, the popularity and convenience of wireless communication have made the demand for RF integrated circuits more and more high. In designing complementary metal-oxygen semiconductor (CMOS) RF circuits, in addition to the high-frequency characteristics of the active components, the inductor is also an important component. Since the CMOS substrate is a highly wear-resistant substrate, the inductance characteristics are relatively difficult to grasp. The inductive architecture used in conventional CM〇s RF circuits is based on the planar architecture used in GaAs circuits. The disadvantage is that the area is too large, and the RF circuit area is too large and the cost is increased. A transformer (Transformer) is also one of the indispensable components in the RF integrated circuit. In recent years, many studies have used transformers to replace the inductor = circuit, which can save the wafer _, and can be used for voltage and voltage applications. Fine, with the miniaturization of components, the area occupied by conventional flat-type transformers is too large. SUMMARY OF THE INVENTION The present invention provides a greening rate and can be saved; the three-dimensional area of the area is 5 1337363 99-12-21. The metal wires of the respective layers of the first coil are arranged corresponding to the respective metal wires of the second coil. And the first coil is connected to the top metal wire by the first turn thereof, and is electrically connected from the top metal wire, the metal wire of the middle metal wire to the metallographic end of the bottom metal layer, and is bypassed in a clockwise direction, and The uppermost peripheral metal wires from the second end of the underlying metal line to the intermediate f metal line are electrically connected and reconnected to the second turn in the same-clockwise direction. Secondly, _ is connected to the top layer by the first 且 and from the top metal wire, the (10) metal wire of the towel metal wire to the metallization of the underlying layer, and is wound down in the above-mentioned hour hand direction, and connected from the bottom and (4)- 1^ to the uppermost layer of the intermediate layer metal line electrical properties: and the second coil is wound in the above-mentioned hour hand direction - the - part of the circle. The first coil and the second coil are clockwise. The first coil and the second coil are also wound in a clockwise direction of the -22. In the center of the mind, the above-mentioned hour hand direction is a three-dimensional counterclockwise direction according to an embodiment of the present invention. The above-mentioned hour hand direction = three-dimensional transformation according to the embodiment of the present invention, the length of one coil is equal. The coils and the coils of the present invention have the same length as the second coils. The brother of the layer - the three-dimensional transformer according to the embodiment of the invention has a length proportional to a coil. The first coil and the third coil according to the embodiment of the present invention have a width equal to the width of the second coil of the first coil q 1357363. According to the three-dimensional pulp napkin of the embodiment of the present invention, the first coil is made of the same material as the second coil.
依照本發明實施例所述之三維變壓器中，第—線圈 度與第一線圈之材質相異。 I 第一線圈之錢之中間層外圍金屬線與中間層内圍金 線之距離與，二_之中間層賴金屬線與中間層内圍金g 線之間的距相等。 依照本發明實施例所述之三維變鞋中，第—線 層金屬線與第二線圈之各層金屬線之間的距離相等。 本七明之二維懸器可提雜合率並可節省晶片面積。 權之上述和其他目的、特徵和優點能更明顯易 下文特牛較佳貫施例，並配合所附圖式，作詳細說明如 【貫施方式】 音圖圖^為^據t發明實施例所繪示H維變壓器料 之三維變壓器之第-線圈的示意圖。圖 3疋、繪不圖i之三維變壓器之第二線圈的示意圖。 3 。月參K?、圖1，本實施例之二維㈣^1 Λ 底10卜，Θ ^灸—維瓮壓盗10配置於半導體基 底10上其包括-弟一線圈⑽與一第二線圈勘。 請參照圖1與圖2,第一螅固, 一第二埠104與多層第一金1 圈娜包括—第-埠(_跡 金屬線106。多層第_ ^ Μ 4ώ 1 ΠΑ 括一頂層第一金屬線110、多個中門 匕 巧第-+属綠“ 中間層第一金屬線120與一底 屬線15。，其彼此是以介電層丨2例如是氧切來絕 7 1337363 99-12-21 請參照圖2’在第一線圈100中，頂層第一金屬線11()的 第一端110a與第一埠1〇2連接，其第二端11〇b透過介層窗插 塞161電性連接多個中間層第一金屬線12〇。 請參照圖2，在第一線圈100中，各中間層第一金屬線 120分別包括一内圍第一金屬線13〇與一外圍第一金屬線 140 °中間層第一金屬、線120之最上層内圍第一金屬線132之 第一端132a透過介層窗插塞161與頂層第一金屬線u〇之第 一端110b連接，其第二端132b透過介層窗插塞162電性連接 其下層之内圍第一金屬線134。中間層第一金屬線13〇之最下 層内圍第一金屬線136之第一端136a透過介層窗插塞163電 性連接其上層之内圍第一金屬線134 ’其第二端136b透過介 層窗插塞164電性連接底層第一金屬線15〇之第一端15〇a。 請參照圖2,在第-線圈刚中，中間層第一金屬線12〇 之最下層外圍第-金屬線146之第__端146&透過介層窗插塞 165電性連接底層第-金屬線15G之第二端丨，其第二端 M6b透過介層窗插塞1的電性連接其上層之外圍第一金屬線 144。中間層第一金屬、線12〇之最上層外圍第一金屬線之 第-端142a透過介層窗插塞167電性連接其下層之外圍第一 金屬線144，其第二端i42b與第二埠1〇4連接。 請參照圖1與圖3，第二線圈2〇〇包括一第一痒2〇2、一 第二璋204與多層第二金屬線2〇6。多層第二金屬線遍包括 -了頁層第二金屬線21G、多個中間層第二金屬線22()與一底層 第二金屬線25G，其彼此以介電層例如是氧化砂來絕緣之。 請參照圖3，在第二線圈2〇〇中，頂層第二金屬線21〇的 1337363 4 99-12-21 第一端210a與第一埠202連接，其第二端210b透過介層窗插 塞261電性連接中間層第二金屬線22〇。 請參照圖3，在第二線圈2〇〇中，各中間層第二金屬線 220分別包括一内圍第二金屬線23〇與一外圍第二金屬線 240。中間層第二金屬線220之最上層内圍第二金屬線232之 第一端232a透過介層窗插塞261與頂層第二金屬線210之第 二端210b連接，其第二端232b透過介層窗插塞262電性連接 其下層之内圍第二金屬線234。中間層第二金屬線220之最下 層内圍第二金屬線236之第一端236a透過介層窗插塞263電 性連接其上層之内圍第二金屬線234，其第二端236b透過介 層窗插塞264電性連接底層第二金屬線250之第一端250a。 請參照圖3，在第二線圈200中，中間層第二金屬線22〇 之最下層外圍第二金屬線246之第一端246a透過介層窗插塞 265電性連接底層第二金屬線250之第二端250b，其第二端 246b透過介層窗插塞266電性連接其上層之外圍第二金屬線 244。中間層第二金屬線220之最上層外圍第二金屬線242之 第一端242a透過介層窗插塞267電性連接其下層之外圍第二 金屬線244，其第二端242b與第二埠204連接。 請參照圖1 ’第一線圈100之各層金屬線106與第二線圈 200之各層金屬線206相對應配置。並且，各線圈1〇〇/2〇〇是 以第一埠102/202連接頂層金屬線ιι〇/21〇，且自頂層金屬線 110/210、内圍金屬線md 134/234、136/236至底層金屬 線150/250之第一端i50a/250a電性連接且以一時針方^繞行 而下，且自底層金屬線150/250之第二端15〇b/25〇b、外圍金 9 1337363 99-12-21 屬線146/246、144/244至中間層金屬線12〇/22〇之最上層外圍 金屬線142/242電性連接且以同一時針方向繞行而上，最上層 外圍金屬線142/242，再連接第二埠104/204。 圖1所繪示之三維變壓器結構的第一線圈1〇〇以及第二 線圈200均是以順時針方向繞行而下，再以順時針方向繞行而 上。在另一實例中，三維變壓器結構的第一線圈1〇〇以及第二 線圈200分別是以逆時針方向繞行而下，再以逆時針方向繞行 而上。 本實施例之三維變壓器中，就x_y平面來說，各層之第一 線圈100與第二線圈200均相互對應。就z方向來說，第一線 圈100與第二線圈200相互交錯堆疊。因此，第一線圈100 與第二線圈200不僅可以在x_y平面耦合也可以z方向上耦 合，故可有效提升耦合率。經實驗證實，其耦合率可達9〇% 以上。 本實施例之三維變壓器中，第一線圈1〇〇與第二線圈2〇〇 之各層金屬線的長度相等，介層窗插塞161〜167以及261〜267 長度也相等，因此，其二者之總長度相等。在另一實施例中， 第一線圈100與第二線圈2〇〇之總長度成一比例。例如是第一 線圈100與第二線圈200之總長度成1:2、1:3、1:4、或 更高。 本實施例之三維變壓器中’第一線圈1〇〇之各層金屬線 的寬度W1與第二線圈200之各層金屬線的寬度W2相等。各 層金屬線之間的距離L可以相等或相異。此外，第一線圈1〇〇 之各層外圍第一金屬線14〇與内圍第一金屬線130之距離dl 1337363 99-12-21 與s亥第一線圈200之各層之外圍第二金屬線240與内圍第二金 屬線230之距離d2相等。然而，在實際應用時並不限於此。 本貫施例之三維變壓器中，第一線圈100之材質與第二 線圈200之材質可以相同或相異，其二者之材質例如是導電材 料如銅或是銘。 在以上的實施例中，是以線圈之總金屬層數為五層之三 維變壓器來說明之，然而，在實際的應用上，並不限於此，其 可以依據實際的需要或是積體電路的總金屬層數來加以變化。 本發明之變壓器為三維，其可以提高耦合率並可有效利 用積體電路的金屬層，以節省晶片面積。而且，本發明之三維 變壓的製程與現有積體電路之製程相容，且製程簡易。 此外，本發明之變壓器可應用於射頻積體電路，用以製 作低雜喊大nGise amplifiei<)^及電壓控制振逢器In the three-dimensional transformer according to the embodiment of the invention, the first coil is different from the material of the first coil. I. The distance between the outer metal wire of the middle layer of the first coil and the inner gold wire of the middle layer is equal to the distance between the metal wire of the middle layer and the gold wire of the middle layer. In the three-dimensional shoe according to the embodiment of the invention, the distance between the first-layer metal wire and the metal wire of the second coil is equal. This seven-dimensional two-dimensional suspension can increase the hybrid rate and save the wafer area. The above and other objects, features and advantages of the present invention can be more clearly described in the following preferred embodiments, and in conjunction with the drawings, the detailed description is as follows. A schematic diagram of the first coil of the three-dimensional transformer of the H-dimensional transformer material is shown. Fig. 3 is a schematic view showing the second coil of the three-dimensional transformer of Fig. i. 3 . The monthly reference K?, FIG. 1, the two-dimensional (four) ^1 Λ bottom 10 of the embodiment, the 灸 moxibustion-dimensional cymbal 10 is disposed on the semiconductor substrate 10, and includes a coil (10) and a second coil . Referring to FIG. 1 and FIG. 2, the first tamping, a second 埠 104 and a plurality of layers of the first gold 1 circle include - the first - 埠 (_ trace metal line 106. multiple layers _ ^ Μ 4 ώ 1 ΠΑ including a top layer A metal line 110, a plurality of middle gates, and a +" green" intermediate layer first metal line 120 and a bottom line 15 are mutually dielectric layers 2, such as oxygen cuts, 7 1337363 99 -12-21 Referring to FIG. 2', in the first coil 100, the first end 110a of the top layer first metal line 11() is connected to the first 埠1〇2, and the second end 11 〇b is inserted through the via window. The plug 161 is electrically connected to the plurality of intermediate layer first metal wires 12A. Referring to FIG. 2, in the first coil 100, each of the intermediate layer first metal wires 120 respectively includes an inner first metal wire 13〇 and a periphery. The first metal line 140° intermediate layer first metal, the first end 132a of the uppermost inner circumference first metal line 132 of the line 120 is connected to the first end 110b of the top layer first metal line u through the via window plug 161 The second end 132b is electrically connected to the inner first metal wire 134 of the lower layer through the via plug 162. The lowermost inner inner first line 136 of the middle layer first metal line 13〇 The first end 136a is electrically connected to the inner first wire 134 ′ of the upper layer through the via 163 ′. The second end 136 b is electrically connected to the first end 15 of the underlying first metal line 15 through the via plug 164 . 〇a. Referring to FIG. 2, in the first coil, the __end 146& of the lowermost peripheral first metal line 146 of the intermediate layer first metal line 12 is electrically connected to the bottom layer through the via 165. The second end of the first metal wire 15G is electrically connected to the outer first metal wire 144 of the upper layer through the interlayer window plug 1. The uppermost layer of the first metal and the wire 12 of the intermediate layer The first end 142a of the first metal wire is electrically connected to the peripheral first metal wire 144 of the lower layer through the via plug 167, and the second end i42b is connected to the second 埠1〇4. Please refer to FIG. 1 and FIG. The second coil 2 〇〇 includes a first itch 2 〇 2, a second 璋 204 and a plurality of second metal lines 2 〇 6. The plurality of second metal lines include the second metal line 21G of the page layer, and a plurality of The intermediate layer second metal line 22 () and the lower layer second metal line 25G are insulated from each other by a dielectric layer such as oxidized sand. Referring to FIG. 3, at the In the second coil 2, the first end 210a of the top second metal line 21 is connected to the first port 202, and the second end 210b is electrically connected to the middle layer through the via plug 261. Referring to FIG. 3, in the second coil 2, each intermediate layer second metal line 220 includes an inner circumference second metal line 23 and a peripheral second metal line 240. The first end 232a of the second metal wire 232 of the uppermost layer of the second metal wire 220 is connected to the second end 210b of the second metal wire 210 through the via plug 261, and the second end 232b of the second metal wire 232 is penetrated through the via. The window plug 262 is electrically connected to the inner metal wire 234 of the lower layer. The first end 236a of the second metal wire 236 of the lowermost inner layer of the second metal wire 220 of the intermediate layer is electrically connected to the inner metal wire 234 of the upper layer through the via plug 263, and the second end 236b of the second metal wire 236 is transparently connected. The layer window plug 264 is electrically connected to the first end 250a of the underlying second metal line 250. Referring to FIG. 3, in the second coil 200, the first end 246a of the lowermost peripheral second metal line 246 of the intermediate layer second metal line 22 is electrically connected to the bottom second metal line 250 through the via plug 265. The second end 245b of the second end 250b is electrically connected to the peripheral second metal line 244 of the upper layer through the via plug 266. The first end 242a of the uppermost peripheral second metal line 242 of the intermediate layer second metal line 220 is electrically connected to the outer peripheral second metal line 244 of the lower layer through the via plug 267, and the second end 242b and the second end 204 connection. Referring to Fig. 1, the metal wires 106 of the first coil 100 are arranged corresponding to the metal wires 206 of the second coil 200. Moreover, each coil 1〇〇/2〇〇 is connected to the top metal wire ιι〇/21〇 by the first 埠102/202, and from the top metal wire 110/210, the inner metal wire md 134/234, 136/236 The first end i50a/250a of the underlying metal line 150/250 is electrically connected and bypassed in a clockwise direction, and from the second end of the underlying metal line 150/250 15〇b/25〇b, the outer gold 9 1337363 99-12-21 The uppermost peripheral metal wires 142/242 of the 146/246, 144/244 to the intermediate layer metal wires 12〇/22〇 are electrically connected and are wound in the same hour hand direction, the uppermost layer The peripheral wires 142/242 are connected to the second port 104/204. The first coil 1 〇〇 and the second coil 200 of the three-dimensional transformer structure shown in Fig. 1 are both wound in a clockwise direction and then wound in a clockwise direction. In another example, the first coil 1 〇〇 and the second coil 200 of the three-dimensional transformer structure are respectively wound in a counterclockwise direction and then wound in a counterclockwise direction. In the three-dimensional transformer of this embodiment, in terms of the x_y plane, the first coil 100 and the second coil 200 of each layer correspond to each other. In the z direction, the first coil 100 and the second coil 200 are alternately stacked. Therefore, the first coil 100 and the second coil 200 can be coupled not only in the x_y plane but also in the z direction, so that the coupling ratio can be effectively improved. It has been confirmed by experiments that the coupling ratio can reach more than 9〇%. In the three-dimensional transformer of the embodiment, the lengths of the metal wires of the first coil 1〇〇 and the second coil 2〇〇 are equal, and the vias 161 to 167 and 261 to 267 are also equal in length. The total length is equal. In another embodiment, the first coil 100 is proportional to the total length of the second coil 2''. For example, the total length of the first coil 100 and the second coil 200 is 1:2, 1:3, 1:4, or higher. In the three-dimensional transformer of the present embodiment, the width W1 of each of the metal wires of the first coil 1 is equal to the width W2 of the respective metal wires of the second coil 200. The distance L between the metal wires of each layer may be equal or different. In addition, the distance between the first outer wire 14 *** of the first coil 1 *** and the inner first metal wire 130 is dl 1337363 99-12-21 and the outer second wire 240 of each layer of the first coil 200 The distance d2 from the inner circumference second metal wire 230 is equal. However, it is not limited to this in practical applications. In the three-dimensional transformer of the present embodiment, the material of the first coil 100 and the material of the second coil 200 may be the same or different, and the materials of the two are, for example, conductive materials such as copper or Ming. In the above embodiment, the three-dimensional transformer having five layers of total metal layers of the coil is described. However, in practical applications, it is not limited thereto, and may be based on actual needs or integrated circuits. The total number of metal layers is varied. The transformer of the present invention is three-dimensional, which can increase the coupling ratio and can effectively utilize the metal layer of the integrated circuit to save the wafer area. Moreover, the three-dimensional transformer process of the present invention is compatible with the process of the conventional integrated circuit, and the process is simple. In addition, the transformer of the present invention can be applied to a radio frequency integrated circuit for making a low-noise large nGise amplifiei<)^ and a voltage controlled oscillator
雖然本發明已以較佳實施例揭露如上，然其並非用以 =本發明任何熟習此技藝者，在不麟本發明之精神 二可作些許之更動與潤飾’因此本發明之保護 耗圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 圖1是依照. 疋依照本發明實施例所繪示 意圖。 圖2是繪示圖1之三 圖3是緣示圖1之三 不之一種三維變壓器之示 【主要元件符號說明】 二維變壓器之第一線圈的示意圖。 三維變壓器之第二線圈的示意圖。 1337363 99-12-21 10 :半導體基底 12 :介電層 100、200 :線圈 102、104、202、204 ··埠 106、206 :多層金屬線 110、210 :頂層金屬線 120、220 :中間層金屬線 130、132、134、136、230、232、234、236 :内圍金屬線 140、142、144、146、240、242、244、246 :外圍金屬線 132a、132b、134a、134b、136a、136b、232a、232b、234a、 234b、236a、236b :内圍金屬線端點 140、142、144、146、240、242、244、246 :外圍金屬線 142a、142b、144a、144b、146a、146b、242a、242b、244a、 244b、246a、246b :外圍金屬線端點 150、250 :底層金屬線 161〜167、261〜267 :介層窗插塞 Wl、W2 :寬度 Dl、d2 :距離 L :長度 12Although the present invention has been disclosed in the above preferred embodiments, it is not intended to be used by any of the skilled in the art, and may be modified and retouched in the spirit of the present invention. This is subject to the definition of the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is an illustration of an in accordance with an embodiment of the invention. 2 is a diagram showing the first coil of the two-dimensional transformer. FIG. 2 is a schematic diagram showing the first coil of the two-dimensional transformer. Schematic diagram of the second coil of the three-dimensional transformer. 1337363 99-12-21 10 : Semiconductor substrate 12 : Dielectric layer 100 , 200 : Coils 102 , 104 , 202 , 204 · 埠 106 , 206 : Multi-layer metal lines 110 , 210 : Top metal lines 120 , 220 : Intermediate layer Metal lines 130, 132, 134, 136, 230, 232, 234, 236: inner metal wires 140, 142, 144, 146, 240, 242, 244, 246: peripheral metal lines 132a, 132b, 134a, 134b, 136a , 136b, 232a, 232b, 234a, 234b, 236a, 236b: inner circumference metal wire end points 140, 142, 144, 146, 240, 242, 244, 246: peripheral metal lines 142a, 142b, 144a, 144b, 146a, 146b, 242a, 242b, 244a, 244b, 246a, 246b: peripheral metal line end points 150, 250: bottom metal lines 161 to 167, 261 to 267: via window plugs W1, W2: width D1, d2: distance L : Length 12