TWI335617B - Coating and developing apparatus, control method of coating and developing apparatus and recording medium - Google Patents

Description

1335617 九、發明說明： 【發明所屬之技術領域】 本發明係關於-種用以對例如半導體晶圓或LCD基板 顯不器用玻璃基板）等的基板，進行基板的清洗處理與/或光= ，的塗布處理及曝光後的顯影處理之塗布、顯影裝置及塗布、 影方法。 # 【先前技術】 、、習=技術中，係對於半導體裝置或LCD基板等基板塗布光阻 液，再藉由以光罩使該光阻膜曝光然後予以顯影的方式，在基 j作所需要的光阻11案之-連串的處理i種方式係使用將曝 光裝置連接到進行光阻液之塗布或顯影之塗布、顯影裝置的系統 而進行的。 在此種習知技術中，塗布、顯影裝置係由排成一列的晶圓匣 盒裝卸站（cassette station)、處理站（pr〇cess stati〇n)、以 ^介面站（interface station)所構成。其中，晶圓匣盒裝卸站 載放有晶BJE^r，並具有傳遞臂’用以在與此晶随盒之間進行 半導體晶® (以下簡稱為晶圓）的傳遞；處理站則鑛晶圓進行 光阻的塗布及/或顯影處理；介面站則連接到曝光裝置。 其次，關於形成有光阻圖案的基板，則進行預定的檢查。此 種檢查=項目包括檢查例如光阻圖案的線寬、光阻圖案與^層圖 案的重疊狀況、以及顯影的缺點等，只有被判斷為合格的基板才 會被送到次一個製程。雖然此種檢查大多係藉由與塗布、顯影裝 置刀別η又置的獨立式（stand-alone)檢查裝置進行，但是採用在塗 布、顯影裝置内設置檢查裝置的線上系統（in_line_system)是 較方便的方式。 因此，在專利文件1即記載了一種在晶圓匣盒裝卸站與處理 站之間，更設有具備複數之檢查裝置與運送臂的檢查站之技術。 在此所δ己載之系統，係將基板從晶圓匣盒裝卸站經由檢查站運送1335617 IX. Description of the Invention: [Technical Field] The present invention relates to a substrate for cleaning a substrate and/or a light for a substrate such as a semiconductor wafer or a glass substrate for an LCD substrate. Coating, developing device, coating, and shadowing method for coating treatment and development treatment after exposure. # [Prior Art] In the technology, a photoresist is applied to a substrate such as a semiconductor device or an LCD substrate, and then the photoresist film is exposed by a photomask and then developed. The series of treatments of the photoresist 11 are carried out using a system in which an exposure apparatus is connected to a coating and developing apparatus that performs coating or development of a photoresist liquid. In this prior art, the coating and developing device is arranged in a row of wafer cassette loading stations, processing stations (pr〇cess stati〇n), and interface stations. Composition. Among them, the wafer cassette loading and unloading station is loaded with a crystal BJE^r, and has a transfer arm 'for transferring semiconductor crystals (hereinafter referred to as wafers) with the crystal cassette; The wafer is coated and/or developed for photoresist; the interface station is connected to the exposure device. Next, regarding the substrate on which the photoresist pattern is formed, a predetermined inspection is performed. Such inspection = items include inspection of, for example, the line width of the photoresist pattern, the overlap of the photoresist pattern and the pattern, and the development defects, and only the substrate judged to be acceptable is sent to the next process. Although most of such inspections are performed by a stand-alone inspection device that is attached to the coating and developing device, it is convenient to use an inline system (in_line_system) in which the inspection device is disposed in the coating and developing device. The way. Therefore, Patent Document 1 describes a technique of providing an inspection station having a plurality of inspection devices and transport arms between the wafer cassette loading and unloading station and the processing station. In this system, the system is transported from the wafer cassette loading and unloading station via the inspection station.

6 S 1335617 到處理站，再將完成處理後的基板暫時送回晶圓匣盒裝卸站 圓匣盒内，再將基板從此處運送到檢查站以進行檢杳。 圖9係顯示實際建構此種系統時的結構之例。g 9係從上 俯視塗布、顯影裝置的概略圖。其中，各符號所代 義 盒裝㈣，12係檢查站，13係處理站，id曝光 裝置相連接的介面站。又，C係晶_盒，15係晶随盒穿知站 11内的傳遞臂，16係檢查站_運送f。TRS ^6 S 1335617 To the processing station, the completed substrate is temporarily returned to the wafer cassette loading and unloading station, and the substrate is transported from here to the inspection station for inspection. Fig. 9 is a view showing an example of the structure when actually constructing such a system. g 9 is a schematic view of the coating and developing device as seen from above. Among them, each symbol is represented by a box (4), a 12-series inspection station, a 13-series processing station, and an interface station to which the id exposure device is connected. Further, the C-series crystal-box, the 15-series crystal passes through the transfer arm in the box 11, and the 16-series check station _ transports f. TRS ^

係傳遞模组，E1、E2、及E3則係檢查模組。為了Z =二平_方式開展，但其實例如傳遞模組細上下四 態構成，而檢查模組則係以上下三層的方式構成。 a，歪 在圖9的塗布、顯影裝置中，晶圓匣盒c内 3J；^TRSa—運送们6—處理站13的路徑而Ϊ送。ίί， 站13中’於各個模組分別進行光阻塗布所必要的t箱 13，於各個模組分別進行顯影處理所必裝置各處理站 ，。例 號到13 #u。紐從丨賴始依序將 到^I序號為 =好的模組依序移動。在處理㈣内的運g理站二將事先 的循環運送，藉此使晶圓依序移動。另外，主辰地移動 ? 循環路徑—周的猶環時間 了，而不會進碰退㈣作；也 决疋好 ，臟盒c取出的晶圓)===曰圓(即比較 晶圓11盒c㈣的晶圓）岐_動作比較早從 不實際之故。 纟會導致私財會餅極為複雜而並 的晶ΪS由圓’全部的晶圓或是被選擇 送到檢查模組。ΐίί 由運送臂16運 只進行檢查模組Ε1的檢查，或口^的J^·；亦各不相同。例如’ 進行檢查模組E3的檢杳7¾在U^—^E2的檢查’或只 處理==環_崎法，跟前述==步£f。 為止。i言吾社未圖不）巾’直到該主臂進行接收 進行，使#日= _，主臂就會接收不到晶圓就向前 便。哀日日®的運运延遲了一個循環的程度。 TRSaUr檢Λ站12⑽奴们6而言，必騎在傳遞模組 來Hfir13之間，圓的運送列為最優先。如此 為在处杳验中，如果以循環運送進行的情況時，因為會成 束將曰曰圓運送到傳遞模組TRSa或TRSb的動作之後，才進 ig 專遞i莫竭c、檢查模組E1、_及™ 的ΞίΓ方Γί模組Μ，之中’如果檢查同時結束 ”中方的s曰圓就會在檢查模組El (E2)内等待一個循環。 降低此—來，會有在檢查流程的處理量（___) 非间Ϊί 本發明人就構思了使運送臂16相對於主臂，以 傳。在此種情況下’ #輸出—就緒訊號，準備從 的傳逨;、&巧時，或是將處理終了的晶®放置在處理站13 理站的、並錢輸㈣緒訊餅’運送们6會優先進行對處 列可ϋΐ送’或從處理站的接收運送’除了該兩種情況以外， 然而，在該種情況下，卻會產生如下所述的問題。目前，業 月塗布、顯影裝置，是要求其能夠達到平均每小時處理150、 、度另一方面，假設傳遞臂15 —次的運送動作需耗費例如 要能夠臂16 一次的運送動作需耗費例如5争κ = U母小時150片的速度進行處理，上述匕因此，為了 臂?心，須超過_秒，片，秒。如t送中的循 24秒)L在1個循環内，只能進行3次的運送動^就傳遞 運。作而言’在1麵環内 15可對傳遞模組TRSc及傳遞模組TRSd進行j 、運达動作為2次。檢查模組El、Ε2、Ε3係用以〜π =的檢查’個別的檢查模組間檢查時間亦不相同進^皮此= —柄組Ε卜Ε2、Ε3的檢查時間，分別為3()秒、丨 田 秒的情況時，例如，當第n片的晶圓進人檢細組I ^ 〇 的曰:曰圓進入檢查模組E2，第9片的晶圓進入檢查模組E3時第4 於第11片，曰曰圓的檢查終了的時點，而第9片晶圓的檢查尚^ 了的話，就無法將第11片的晶圓從檢查模組E1取出。 其理由在於，如果在檢查簡容許晶圓進行超越處理的話， 就有可能產生例如在檢查模組肋，後一批次（lot)中排在最先的 晶圓進入後，前一批次的最後的晶圓才緊接著進入的狀況。如此 一來，就會產生必須變更檢查模組£3的處理程序（Recipe)的問 題，結果會導致運送的停滯。 然而，如同在實施的型態中以比較例所顯示的。如果晶圓的 檢查終了之後，產生無法從檢查模組運出的狀況，從而會造成在 檢查的程序花費相當長的時間之問題。 【專利文件1】日本特開2005 — 175052號（第0042段落，圖 4) 【發明内容】 1335617 (2/A、25B、25C)以及主臂26A、26B係配置成前後排成一列的 型態。因為在每個個別的連接部位G，形成有未圖示的晶圓運送用 ^開口部，因此，在此處理站S1的内部，晶圓评可從一端的棚架 模組25A自由移動到他端的棚架模組25C。又，主臂26a、2服係 配置在由以下裝置所建構成的區隔壁所環繞而成的空間内，包 •括··由_處於晶圓匣盒裴卸站21的位置看過去，配置成前後方向的 棚呆模組25 (25A、25B、25C)側的一面；例如右側的液體處理模 組側的一面；以及由左側的一面所成的背面。 在以主臂26 (26A、26B)進行基板的傳遞的位置，更設置有 φ 液體處理模組28 (28A、2诎）’用以使塗布裝置與顯影裝置等的液 體處理裝置多層化。如圖2所示，此液體處理模組28 (28A、28B) 係由例如收納有塗布裝置等的處理容器29，疊層複數層（例如5 層）而成。 又’就棚架模組25 (25A、25B、25C)而言，例如如圖3所示， 將以下的裝置分配成例如上下1〇層，包括：傳遞模組（TRS1〜 TRS4) ’用以作為進行晶圓傳遞之傳遞部；加熱模組（哪卜LHP2)， 作為加熱裝置，用以在塗布光阻液後或塗布顯影液後，進行晶圓 的加熱處理；冷卻模組（CPL1、CPL2、CPL3)，作為冷卻裝置，用 以在塗卞光阻液的前後與顯影處理之前進行晶圓的冷卻處理；以 φ f加熱模組（PEB)，作為加熱裝置，用以對曝光處理後的晶圓進 订加熱處理。在此，該TRS1、TRS4係用以在晶圓匣盒裝卸站21 與處理站si之間；而該傳遞模組TRS2、TRS3係用以在兩個主臂 26A、26B彼此之間，分別進行晶圓的傳遞作業而使用。 在此例之中，加熱模組（LHP1、LHP2);冷卻模組（CPL1、CPL2、 CPL3) ’及加熱模組（ρΕβ)即相當於處理模組。 在此種處理站S1中’棚架模組25C的内部遠端側，係經由第 I#介面部S2以及第2介面部S3，與曝光裝置S4相連接。其中， 第1介面部S2包括：傳遞臂3卜以多層的方式配置的棚架模組 32A、以及以多層的方式配置的棚架模組32ββ其中，傳遞臂31 1335617 係以可自由上升下降，且繞著鉛直軸可自由轉動的方式所構成，The transmission module, E1, E2, and E3 are inspection modules. For the Z = two flat _ way, but in fact, for example, the transmission module is composed of fine upper and lower four states, and the inspection module is composed of the above three layers. a, 歪 In the coating and developing apparatus of Fig. 9, the inside of the wafer cassette c 3J; ^ TRSa - the transport 6 - the path of the processing station 13 is sent. In the station 13, the t-box 13 necessary for photoresist coating in each module is separately processed in each module. Example number to 13 #u. New Zealand will continue to move to the ^I sequence = good module in order. In the process (4), the transport station 2 transports the cycle in advance, thereby moving the wafers in order. In addition, the main movement moves? The circulation path - the cycle time of the week, and will not enter the collision (four); also decided, the wafer removed by the dirty box c) === round (ie, compare wafer 11 The c-c (four) wafer) 岐 _ action is relatively unpredictable.纟 will result in a very complicated private accounting cake, and the wafer S will be sent to the inspection module by the round wafer. Ϊ́ίί is carried by the transport arm 16 and only the inspection of the inspection module Ε1 is performed, or the J^· of the mouth ^ is also different. For example, 'checking module E3 is checked at U^-^E2' or only == ring_saki method, followed by the above == step £f. until. I said that the company did not figure out the towel until the main arm was received, so that #日 = _, the main arm would not receive the wafer and move forward. The day of the sorrow® is delayed by a cycle. TRSaUr inspection station 12 (10) slaves 6, must ride in the transfer module to Hfir13, the round of transportation is listed as the highest priority. In this case, if it is carried out in a loop, if it is carried out in a loop, it will be sent to the transfer module TRSa or TRSb in bundles, then the ig will be exhausted, and the module E1 will be inspected. , _ and TM Ξ Γ Γ Μ Μ Μ , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The amount of processing (___) is not the same as that of the inventor. The inventor conceived to transfer the carrier arm 16 relative to the main arm. In this case, the ##output-ready signal is prepared for the transmission; and & Or, the finished Crystal® is placed at the processing station 13 and the money is lost. (4) The newsletter 'Transporters 6 will give priority to the delivery or receive from the processing station' except for the two In addition to this, however, in this case, the following problems occur. At present, the monthly coating and developing device is required to be able to achieve an average of 150 per hour, and on the other hand, the transfer arm is assumed. 15 times the shipping action is costly, for example, to be able to arm 16 A single transport operation requires a speed of, for example, 5 κ = U mother hours, 150 laps. Therefore, for the arm heart, it must exceed _ sec, slice, and second. If t is sent in 24 seconds, L is In one cycle, only three times of transport can be carried out. In this case, 'in the one-sided ring 15, the transfer module TRSc and the transfer module TRSd can be J and the transfer operation is two times. Modules El, Ε2, Ε3 are used for the inspection of ~π = 'The inspection time between individual inspection modules is also different. The inspection time of the handle group Ε Ε 2, Ε 3 is 3 () seconds respectively. In the case of 丨田秒, for example, when the nth wafer enters the inspection group I ^ 曰 曰: 曰 round enters the inspection module E2, the ninth wafer enters the inspection module E3 4th In the eleventh film, when the inspection of the round is finished, and the inspection of the ninth wafer is still completed, the eleventh wafer cannot be taken out from the inspection module E1. The reason is that if the inspection is in progress If the wafer is allowed to be over-processed, it may happen, for example, in the inspection module rib, after the first wafer is placed in the next batch, the previous one. The last wafer of the second is immediately followed by the entry situation. As a result, there is a problem that the recipe of the inspection module £3 must be changed, and as a result, the transportation is stagnant. However, as in the implementation type In the state shown in the comparative example, if the inspection of the wafer is finished, a condition that cannot be shipped out from the inspection module is generated, which causes a problem that the inspection procedure takes a considerable amount of time. [Patent Document 1] [2005] No. 2005-175052 (paragraph 0044, Fig. 4) [Disclosure] 1335617 (2/A, 25B, 25C) and the main arms 26A, 26B are arranged in a row in front and rear. Since the wafer transport opening portion (not shown) is formed in each of the individual connection portions G, the wafer evaluation can be freely moved from the one end scaffolding module 25A to the inside of the processing station S1. The side scaffolding module 25C. Further, the main arms 26a and 2 are arranged in a space surrounded by the partition walls formed by the following devices, and are included in the position of the wafer cassette unloading station 21, and are arranged. One side of the shackle module 25 (25A, 25B, 25C) on the side in the front-rear direction; for example, one side on the liquid processing module side on the right side; and the back side formed on the left side. At the position where the main arm 26 (26A, 26B) transfers the substrate, the φ liquid processing module 28 (28A, 2A) is further provided for multilayering the liquid processing apparatus such as the coating device and the developing device. As shown in Fig. 2, the liquid processing module 28 (28A, 28B) is formed by, for example, a processing container 29 in which a coating device or the like is housed, and a plurality of layers (for example, five layers) are laminated. Further, in the case of the scaffolding module 25 (25A, 25B, 25C), for example, as shown in FIG. 3, the following devices are assigned, for example, upper and lower layers, including: transfer modules (TRS1 to TRS4)' As a transfer unit for performing wafer transfer, a heating module (which is LHP2) is used as a heating device for performing heat treatment of the wafer after applying the photoresist or after applying the developer; and cooling modules (CPL1, CPL2) , CPL3), as a cooling device for cooling the wafer before and after the coating of the photoresist and before the development process; using a φ f heating module (PEB) as a heating device for the exposed wafer Order heat treatment. Here, the TRS1 and TRS4 are used between the wafer cassette loading and unloading station 21 and the processing station si; and the transfer modules TRS2 and TRS3 are used between the two main arms 26A and 26B, respectively. It is used for wafer transfer operations. In this example, the heating modules (LHP1, LHP2), the cooling modules (CPL1, CPL2, CPL3) and the heating module (ρΕβ) correspond to the processing modules. In the processing station S1, the inner distal end side of the scaffolding module 25C is connected to the exposure device S4 via the first #21 surface portion S2 and the second dielectric surface portion S3. The first face portion S2 includes a scaffolding module 32A disposed in a plurality of layers of the transfer arm 3, and a scaffolding module 32ββ disposed in a plurality of layers, wherein the transfer arm 31 1335617 is freely movable up and down. And it is formed by freely rotating around a vertical axis,

而且如後所述’其可對處理站S1的棚架模組25C的CPL2與PEB 進行晶圓的傳遞。而以多層的方式配置的棚架模組32A包含：用 ，將被，入到周邊曝光裝置與曝光裝置S4的晶圓暫時收納用的内 部用緩衝晶圓匣盒；以及用以將從曝光裝置別運出的晶圓暫時收 納用的外部用緩衝晶圓匣盒。而以多層的方式配置的棚架模組 32B，則包含：晶圓的傳遞模組與高精密度溫度調整模組。 卜在該第2介面部S3設有傳遞臂33。使其藉由傳遞臂33對於 第1介面部S2之傳遞模組或高精密度溫度調整模組、曝光裝置S4Further, as will be described later, it is possible to transfer the wafers to the CPL 2 and the PEB of the scaffolding module 25C of the processing station S1. The scaffolding module 32A disposed in a multi-layer manner includes: an internal buffer wafer cassette for temporarily storing the wafer into the peripheral exposure device and the exposure device S4; and An external buffer wafer cassette for temporary storage of wafers that are not shipped. The scaffolding module 32B configured in a multi-layer manner includes a wafer transfer module and a high-precision temperature adjustment module. A transfer arm 33 is provided on the second dielectric surface S3. The transmission module 33 or the high-precision temperature adjustment module and the exposure device S4 by the transfer arm 33 for the first dielectric surface S2

的内π卩平台（in stage)及外部平台（〇ut stage),進行晶圓的 傳遞。 其次1說明在處理站S1的内部，主臂26A、26B的移動情況。 如圖4所示，此兩個主臂26A、26B係以TRS1—CPL1—塗布裝置 (COT) —TRS2—LHP1—CPL2的路徑將晶圓從晶圓g盒裝卸站21 運送往第1介面部S2 ;然後，以peb—CPL3—顯影裝置（DEV)— LHP2—T脱的路徑將晶u從帛1介面部運送往晶圓匿盒 裝卸站21。另外，在處理站S1與第丨介面部沿之間，係經由CpL2 與PEB進行晶圓的傳遞。 如圖4所不，在此時的此種實施型態中，將主臂26A、施的 個別的路徑以虛線表示，主臂26A係以例如：TRS1—cpu—c〇T— TRS2—TRS3—TRS4—TRS1的循環路徑’循環運送晶圓；而主臂26β 係以 TRS2—LHP1—CPL2—PEB—CPL3—DEV—LHP2—TRS3~>TRS2 的 •徑運送晶圓。因此’以圖3顯示棚架模組25A〜25c的配置之一 例。在此例中，TRS1、TRS4係配置於棚架模組25A ; TRS2、TRS3 ，配置於棚架模組25B ; CPL2與PEB係配置於棚架模組25C; CPL1 係配置於棚架模組25A或棚架模組25B ; LHP：l、LHP2係配置於棚 250 ° ^ 26A ' 26B * f，“用以將作為傳遞齡，被放置於處理模組的晶圓w取出， 然後將固持住的次-個晶圓W傳遞到該模組。然後，主臂26Α、26β 15 丄功617 即依循預先擬定好的運送計劃（運送晶圓w的模組之順序），將被 ，置於各模組的晶圓W逐片移置到次一個模組。此時，在運送路 徑中，就不會有被分配到處理的序號比較小的晶圓w，被序號比較 大的晶圓W超越的情況產生。例如，當以加熱模組—冷卻模組的 順序運送晶圓w時，就不會有序號比較大的晶圓w比序號比較小 的晶圓w更早進入加熱模組。 ^其次說明在處理站S1對基板進行處理時基板的流程。首先， s收納有晶圓W的晶圓匣盒c，從外部被運入到該晶圓匣盒裝卸站 =8守，與開關部23的開啟同時，晶圓匣盒c的外蓋亦被移開，再 φ 藉由/專遞臂24取出晶圓W。然後，晶圓W從傳遞臂24被傳遞到傳 遞模組TRSa。如圖3及圖4所示，藉由檢查站4〇的運送臂4，從 此處運送到傳遞模組TRS1。其次，主臂26A從此處接收晶圓w , 然後，再藉由主臂26A、26B，以如前所述的路徑，也就是trsi— CPL1—COT—TRS2—LHPHPL2的路徑運送。然後，再經由CPL2 將已經塗布了光阻液的晶圓，送到第1介面部S2。 ,在第1介面部S2内，藉由傳遞臂31將晶圓W依據内部用緩 衝晶圓匣盒—周邊曝光裝置—高精密度溫度調整模組的順序運 送，再經由棚架模組32B的傳遞模組，運送到第2介面部S3。然 後’第2介面部S3的晶圓W ’則藉由傳遞臂33，經由曝光裝置S4 • 的内部平台運送到曝光裝置S4，以進行曝光。 曝光後的晶圓係經由第2介面部S3—第1介面部S2,再經由 處理站S1的PEB’被運送到處理站S1。如前所述，經由PEB->CPL3 -TRS4的路徑運送。依據此流程在顯影裝置進 行預定的顯影處理，以形成預定的光阻圖案。 •此時’主臂26A係將批次標號第η個的晶圓Wn，經由TRS1 運送到次一個程序的CPL1。然後，根據COT—TRS2—TRS3—TRS4 -TRS1的路徑做一次循環，然後再回到TRS1，再將次一個晶圓， 也就是第n + 1個的晶圓wn+i，經由TRS1運送到CPL1。又，主臂 26B係將TRS2的晶圓運送到次一個程序的LHP1。然後，根據CPL2 1335617 —PEB—CPL3-DEV—LHP2—TRS3—TRS2 的路徑做一次循環，然後 再回到TRS2 ’再將次·一個的晶圓’經由TRS2運送到lhpi。如同 在習知技術的項目中所述，為了要藉由本裝置，達成平均丨小時 内處理150片晶圓W的目標’因此將一個循環的時間設定為24秒。 其次，參照圖4 ’詳細敘述關於檢查站4〇。僂诚措^ 伤 用以載放從晶圓匣盒c取出，等候送到處理站S1 圓w。而^ 遞模組TRSb係用以載放從處理站S1回來，已經處理完成的晶圓 W。另外，在此例中’傳遞模組TRSc係用以從晶圓匣盒匸接收已 經處理完成的晶圓W ;且此晶圓匣盒C裝有自處理站^回來，已 經處理完成的晶圓w，然後直到將晶圓w送到檢查模組E1 (E2、 E3)為止，皆處於待機狀態的載放台。傳遞模組:^ γ 在檢查模組E1 (E2、E3)完成檢查的晶_之載放台係m 〜TRSd以及檢查模組E2、E3分別皆係疊層 =示 制上方便域，在圖4巾鮮面配置的方式予 該運送臂4具備以下的特點： 傳遞使晶圓E盒裝卸站21與處理站S1之間的晶圓W的 次的所述的循環時間為24秒時，假設運送臂4的一 的運送，、以及從傳:Γ 2 $必須使從傳遞模組TRSa到trsi 因此，在舰TP(f a S4到TRSb的奴此兩者優先處理， 送，R=+與檢查胸⑽，之間的運 能進行2次。铁而，右（也就是1個循環時間之中）僅 ⑽、Ε3)之間的運^、TRSd與檢查模組Ε1 上。例如，假f f上有時亦可在各個循環進行2次以 然後藉由運送臂4曰將後^6Α將傳遞模組TRS1上的晶圓W取出， 在此種情況下W從傳遞模組陶送到觀。 TRS1以取得後續^ 11間之後’主臂26A就會到傳遞模組 ，曰曰SJ W。然後，對於此已經無晶圓评载放的傳 1335617 卩點，只要是其次-個 開始對檢查模組進行基板的傳遞在然即將胖终了之前， 遞模組TRSa運送到TRS1。 、者P可將基板從傳 =:3環ΐ:定會成為2次。關於此點將於後文詳S: 另外臂4細如下的方式被控制： 門/，)ίίί=ίf W的處理序號中’從處理序號較小的晶圓W 開始，將其運入檢查模組E1 (E2、E3)〇 JaalaJ w 檢查b)與分配給晶圓w的處理序號無關，將檢查完成的晶㈣從 c)模組El (E2、E3)運出。 #因此’雖然係將從j號到13號的晶圓w，依 ^模組TRSc運制檢查模組E1 (E2、E3)，但是例如在某個， 時間之中+假設11號的晶圓㈣處理已 ^二 ί圓:的Ϊ，完成時’此時就會先越過9號的晶圓ΐ = 號的晶圓W從檢查模組El (Ε2、Ε3)運出。 其次，敘述關於各檢查模組。在本例中，檢查模組Ει係 檢測晶圓W上的宏觀（瞻Q)缺陷之宏觀檢查模組 = 係用以檢測在晶® U卿成賴厚姻細線寬之 檢查核組，檢查模組E3係用以檢測曝光重合的偏移 在拾 測此次形成的圖案與基底的圖案之間的位置偏移之重合檢g檢 組。，此時，在各個檢查模組以、E2、E3進行檢查所需耗㈣:寺間， 例如分別假狀30秒、⑽秒、以及⑽秒。因為各個檢杳1The internal π卩 platform (in stage) and the external platform (〇ut stage) perform wafer transfer. Next, the movement of the main arms 26A, 26B inside the processing station S1 will be described. As shown in FIG. 4, the two main arms 26A, 26B transport the wafer from the wafer box loading and unloading station 21 to the first interface by the path of TRS1-CPL1-coating device (COT)-TRS2-LHP1-CPL2. Part S2; Then, the crystal u is transported from the 帛1 interface to the wafer box loading and unloading station 21 by the path of the peb-CPL3-developing device (DEV)-LHP2-T. In addition, between the processing station S1 and the third interlayer edge, wafer transfer is performed via CpL2 and PEB. As shown in Fig. 4, in this embodiment of the present embodiment, the main path of the main arm 26A is indicated by a broken line, and the main arm 26A is, for example, TRS1 - cpu - c 〇 T - TRS2 - TRS3 - The TRS4-TRS1 cycle path 'circulates the wafers; the main arm 26β transports the wafers with TRS2-LHP1-CPL2-PEB-CPL3-DEV-LHP2-TRS3~>TRS2. Therefore, an example of the arrangement of the scaffolding modules 25A to 25c is shown in Fig. 3. In this example, TRS1 and TRS4 are disposed in the scaffolding module 25A; TRS2 and TRS3 are disposed in the scaffolding module 25B; CPL2 and PEB are disposed in the scaffolding module 25C; and the CPL1 is disposed in the scaffolding module 25A. Or scaffolding module 25B; LHP: l, LHP2 is placed in the shed 250 ° ^ 26A ' 26B * f, "to be used as the transfer age, the wafer w placed in the processing module is taken out, and then will be held The second wafer W is transferred to the module. Then, the main arm 26Α, 26β 15 617 617 follows the pre-planned transportation plan (the order of the modules carrying the wafer w), and is placed in each mode. The wafers W of the group are transferred to the next module one by one. At this time, in the transport path, there is no wafer w which is assigned to the smaller serial number, and is overwritten by the wafer W having a larger serial number. For example, when the wafer w is transported in the order of the heating module-cooling module, there is no wafer w with a larger serial number entering the heating module earlier than the wafer w having a smaller serial number. The flow of the substrate when the processing station S1 processes the substrate will be described. First, the wafer cassette c in which the wafer W is stored is externally The wafer cassette loading and unloading station = 8 shou, and the opening of the wafer cassette c is removed, and the wafer W is taken out by the / delivery arm 24. The wafer W is transferred from the transfer arm 24 to the transfer module TRSa. As shown in FIGS. 3 and 4, the transport arm 4 of the inspection station 4 is transported from here to the transfer module TRS1. Second, the main arm 26A The wafer w is received therefrom, and then transported by the main arms 26A, 26B in the path as described above, that is, the path of trsi-CPL1-COT-TRS2-LHPHPL2. Then, it is already coated via CPL2. The wafer of the photoresist is sent to the first dielectric surface S2. In the first dielectric surface S2, the wafer W is transferred to the wafer by the transfer arm 31. The peripheral exposure device is used for high precision temperature. The sequential transfer of the adjustment module is carried to the second dielectric surface S3 via the transfer module of the scaffolding module 32B. Then, the wafer W of the second dielectric surface S3 passes through the transfer device S4 via the transfer device S4. • The internal platform is transported to the exposure device S4 for exposure. The exposed wafer passes through the second dielectric surface S3 - the first dielectric surface S2 Then, it is transported to the processing station S1 via the PEB' of the processing station S1. As described above, it is transported via the path of PEB->CPL3-TRS4. According to this flow, predetermined development processing is performed on the developing device to form predetermined light. Resistance pattern. At this time, the main arm 26A transports the nth wafer Wn of the batch number to the CPL1 of the next program via TRS1. Then, it performs a loop according to the path of the COT-TRS2-TRS3-TRS4-TRS1. Then, return to TRS1, and then transport the next wafer, that is, the n+1th wafer wn+i, to the CPL1 via TRS1. Further, the main arm 26B transports the wafer of the TRS 2 to the LHP 1 of the next program. Then, a cycle is performed according to the path of CPL2 1335617 - PEB - CPL3 - DEV - LHP2 - TRS3 - TRS2, and then back to TRS2 ' and then the next wafer" is transported to the lhpi via TRS2. As described in the prior art project, in order to achieve the target of processing 150 wafers W in an average of hours by the apparatus', the time of one cycle is set to 24 seconds. Next, the check station 4A will be described in detail with reference to Fig. 4'.偻诚措^ Injury Used to load from the wafer cassette c, waiting to be sent to the processing station S1 circle w. The transfer module TRSb is used to load the wafer W that has been processed from the processing station S1. In addition, in this example, the 'transfer module TRSc is used to receive the processed wafer W from the wafer cassette; and the wafer cassette C is loaded with the self-processing station, and the processed wafer is processed. w, then until the wafer w is sent to the inspection module E1 (E2, E3), all in the standby stage. Transfer module: ^ γ In the inspection module E1 (E2, E3) to complete the inspection of the crystal _ the placement of the platform m ~ TRSd and the inspection modules E2, E3 are respectively laminated = display on the convenient domain, in the figure In the case where the fresh-faced arrangement of the four-beds is provided, the transfer arm 4 has the following characteristics: when the cycle time for transferring the wafer W between the wafer E-box loading and unloading station 21 and the processing station S1 is 24 seconds, Assume that the transport of one of the transport arms 4, and the pass: Γ 2 $ must be made from the transfer module TRSa to trsi. Therefore, in the ship TP (fa S4 to TRSb slaves are treated first, send, R = + and Check the chest (10), the transfer of energy between the two. Iron, right (that is, one cycle time) only between (10), Ε 3) between the operation, TRSd and inspection module Ε1. For example, the dummy ff may be performed twice in each cycle, and then the wafer W on the transfer module TRS1 is taken out by the transport arm 4曰, in which case the W is transferred from the module. Send it to the view. After TRS1 has obtained the following ^11, the main arm 26A will go to the transfer module, 曰曰SJ W. Then, for this 1335317 defect that has been wafer-free, as long as it is the next one to start the transfer of the inspection module to the substrate, the delivery module TRSa is shipped to TRS1. , P can transfer the substrate from the =: 3 ring ΐ: will be 2 times. This point will be described later in the following S: The other arm 4 is controlled as follows: Door /,) ί ί ί ί W W W W W W W W W W W W W W W W W W W W W W W W W W W W W W W W W W W W W W W W W W W W E1 (E2, E3) 〇 JaalaJ w Check b) Regardless of the processing number assigned to wafer w, the finished crystal (4) is shipped out of c) module El (E2, E3). # Hence'Although the wafers w from the j to the 13th are processed, the inspection module E1 (E2, E3) is operated according to the module TRSc, but for example, in some time, the wafer of the assumption 11 is assumed. (4) Processing the 已 ί circle: When finished, the wafer W that has passed the No. 9 wafer ΐ = number will be shipped out from the inspection module El (Ε2, Ε3). Next, the description will be made regarding each inspection module. In this example, the inspection module Ει is a macro inspection module for detecting macroscopic (Q-Q) defects on the wafer W = is used to detect the inspection core group in the crystal The group E3 is a coincidence detecting group for detecting the offset of the exposure coincidence in picking up the positional deviation between the pattern formed this time and the pattern of the substrate. At this time, it is necessary to check (4) for each inspection module with E2 and E3: for example, 30 seconds, (10) seconds, and (10) seconds respectively. Because each inspection 1

Eh E2、E3的檢查時_不_，因此有可能會產生較彳^= ⑴ 5617 （較晚的）晶圓W的檢查，會比較早運入亦 較早的）晶圓W的檢查更早完成的情況。 阳® E盒裝卸站21的傳遞臂24具備以下的功能： TRSa ® S盒C接收處理前的晶® W，並傳遞給傳遞模組 盒^)從傳遞模組職接收已處理完成的晶㈣，並送回晶· =已完成的晶圓W從晶_盒。傳遞給傳遞模組 此外2 f成的晶’從傳遞模·_傳遞回晶_盒卜 奸i J1a)^b)的運送在該循環時間中是—定要進行的，因 話虽為！4秒時’上假設一次的動作例如耗費8秒的 β Ί個循環之中’就只能進行c)或d)兩者中的一項。 臂含有電腦的控制部2〇0。包含傳遞臂24以及運送 ίϊΐί 連㈣料，較藉由齡於此控制部2〇〇 腦程式所控_。其次，關於傳遞模組，當載放有 了ίίί 緒訊號。又，關於檢查模組，當晶，的檢查終 是晶圓㈣運出的時候，控制部⑽就會輸出關於 ίΪ3ί號。更具體而言，例如，當晶圓W被載放於_ =輸出^訊號’如果從運送臂4來看的話，就會成為傳遞準備 ，十當晶圓W從職被運出的時候所輸出的訊號，如果 來看麟，就會成為傳鮮備完成找號。因此傳遞 、，/、運送臂4都可基於此等之就緒訊號，判斷可以從哪個模組 運送到哪個模組。基於此判斷與先前的規則，而使運送動作獲得 決定。 又 其次，說明在本實施型態中關於檢查站4〇的作用。圖5係顯 示在各個循環巾’傳遞模組脱、觀以及在各個檢查模組Ει’、 E2 E3所放置的晶圓w，數字就是代表在處理程序的管理上所分 配給晶圓的序號。也就是說’晶_盒c内的晶圓w會根據這個 1335617 :以理J f1二來，然後再依據這個序號被送出到檢查站4〇。 在 的行中序號配置的意義，就是相當 的晶圓W，位在臟盒C内的位置。如果換 謂的最上方的行的序號可理=環=為所Eh E2, E3 inspection time _ no _, so it is possible to produce 彳 ^ = (1) 5617 (late) wafer W inspection, will be earlier than the early shipment of the wafer W inspection earlier The situation is completed. The transfer arm 24 of the Yang® E box loading and unloading station 21 has the following functions: The TRSa ® S box C receives the crystal W before processing and passes it to the transfer module box ^) receives the processed crystal from the transfer module (d), and sent back to the crystal = = completed wafer W from the crystal_box. Passed to the transfer module In addition, the transfer of the crystal of the 2f into the crystal _ _ _ _ i J1a) ^ b) is carried out during the cycle time, although it is! In the case of 4 seconds, it is assumed that one action of e.g., 8 cycles of β Ί a cycle can only perform one of c) or d). The arm contains a computer control unit 2〇0. It includes the transfer arm 24 and the transport ϊΐ 连 ( (4) material, which is controlled by the control program. Secondly, regarding the transfer module, when the ίίί 。 signal is placed. Further, regarding the inspection module, when the inspection of the crystal is finally carried out by the wafer (4), the control unit (10) outputs the number ίΪ3ί. More specifically, for example, when the wafer W is placed on the _=output ^ signal', if it is viewed from the transport arm 4, it will become a transfer preparation, and the output will be output when the wafer W is shipped out. The signal, if you look at Lin, will become a freshman to complete the search. Therefore, the transfer, /, and transport arm 4 can determine which module can be transported to which module based on the ready signals. Based on this judgment and the previous rules, the shipping action is determined. Next, the action of the check station 4 in the present embodiment will be described. Fig. 5 shows the wafer w placed on each of the circulation sheets' transfer modules and placed on the respective inspection modules Ει', E2 E3, and the numbers represent the serial numbers assigned to the wafers in the management of the processing program. That is to say, the wafer w in the crystal_box c will be sent according to this 1335617: J F1, and then sent to the inspection station 4 according to this serial number. The meaning of the serial number configuration in the row is the equivalent of the wafer W, which is located in the dirty box C. If the number of the top row of the change is negligible = ring = for the

El ^ E2 ^ Ef ^；! ί !,； ® TRSc^TRSd. 曰因ίίίίί 2循環中，在TRSC放置晶圓Γ1」。如前所述，這 欠傳1 24在1個循環中所能夠進行的檢查相關的運送動 「1」，藉由運送臂4，運送到 晶圓「2」放置在TRSc 在第3循環中，將TRSc的晶圓 檢查模組E1，然後藉由傳遞臂24將 A 〇 在第4循環中，TRSc的晶圓「2」，係藉由運送臂4祐 檢查模組E2，然後藉由傳遞臂24將晶圓「3 在第5循環中，運送臂4將晶圓「3」從TRSc 組E3，其次將已在檢查模組E1完成檢查的晶圓「！ 又’傳遞臂24將其次的晶圓「4」傳遞到TRSc。 、 、以此種方式，使循環不斷進行。到了第27循環之時，庠辦於 刖的晶圓「9」及晶圓「10」，還分別在檢查模組肋及檢查組° $ 中進行檢查，但是序號較後的晶圓「U」，已經結束在檢^模组 的處理。於是，在這種情況下，不待在前的晶圓「9」及晶圓、「ι〇 的檢查終了，先將在後的晶圓「11」從檢查模組Ε1運出， TRSd。其次，晶圓「12」會從TRSc被傳遞到檢查模組耵，.， 晶圓「13」則被放置在TRSc。 在圖7 (a)、（b)係分別表示在第27循環中，就緒部♦給 出與運送_，以歧運送臂4的控嶋錢為明確=== 20 '：S > 組Ei輸出的if^訊號之就緒訊號）從檢查模 運d。織，在此 出，其次再輪出運人至的備完成的就緒訊號被輸 從晶圓匣盒装卸站21扯μ 成的就緒訊號。此時，因為 ^-ITRSl 從TRSc運送到檢查模組耵。 订’…、'後，再將晶圓「12」 本發:二Ϊ晶外一種型態。此實施型態並非如同 Ε2、Ε3 Ζΐΐ 私，岐在將晶SI對檢查模組El、 叫成為如円β I、、出，皆根據晶圓的序號順序進行時，運送計 f上述的實施型態’因為可以將分配給晶_處理序號較 日日圓’比處理序號較大的晶圓，使其更早從檢查模组E1(E2、 )運出，，就是說，關於從檢查模組E1 (E2、E3)將晶圓的運 =因為允許進行晶圓的超越程序，因此可以減少已處理完成的 曰曰圓在檢，模、组El (E2、E3)等待所耗費的無謂時間。因此可提 升其處理量（生產效率）。然後，因為關於將晶圓運人檢查模組E1 (巧、E3) ’係禁止晶圓的超越，如此一來，就不會產生在某個檢 查模組，後一批次中排在最先的晶圓進入後，前一批次的最後的 晶圓才緊接著進入而導致處理程序變更的問題。 又’依晶圓的運送路徑，除了只進行基板傳遞之傳遞模組之 外’亦可以用進行基板冷卻之冷卻模組或進行基板加熱之加熱模 級’將進行基板的冷卻或加熱，以及基板的傳遞兩者的模組，使 用在將晶圓從基板晶圓匣盒到處理站的傳遞亦可。在此種情況之 下’此處理模組兼用來作為傳遞模組TRS1。在此種情況之下，如 21 1335617 同^在說明闕於運送臂4的控制之處所 理妗間’也就是在TRS1的停滯時間已經決定、^為曰曰圓琢的處 該循環時間中扣除將來自晶_盒裝卸站、& ^，就必須在從 站S1的運送時間；與接收來自處理站&的曰^圓送到處理 ^剩餘的時間之中，對於檢麵_ (E2、&)進=== 但是 ，，而使得晶圓W從後續的傳遞模組TJ^曰由的實 ㈣時’就必簡其控制成使其 巧間的終了 =I的傳遞。這是因為如果進行進行 =模峨丨内的停滯時間（處理 日车門示此種情況之說關，TG係表示某個循€中，社 ϊ π ίΪ! ° 200 tΕ ；ΐ 0 Π」運出時，從此時點到το為 ；見且匕1將晶 S:rps秒的兩倍以上::=El ^ E2 ^ Ef ^;! ί !,; ® TRSc^TRSd. In the 2 cycle, the wafer 放置1" is placed in the TRSC. As described above, the transport-related "1" that can be performed in one cycle of the under-transfer 1 24 is transported to the wafer "2" by the transport arm 4, and placed in the third loop in the TRSc. The wafer inspection module E1 of the TRSc is then placed in the fourth cycle by the transfer arm 24, and the wafer "2" of the TRSc is inspected by the transport arm 4 to check the module E2, and then by the transfer arm 24 wafer "3" In the fifth cycle, the transport arm 4 will wafer "3" from the TRSc group E3, and secondly, the wafer that has been inspected by the inspection module E1 "!" will pass the arm 24 to the next crystal. The circle "4" is passed to TRSc. In this way, the loop is continuously carried out. At the end of the 27th cycle, the wafer "9" and the wafer "10" of the 刖 刖 are also inspected in the inspection module rib and inspection group ° $, but the wafer "U" after the serial number is , has ended the processing of the module. Therefore, in this case, the wafer "9" and the wafer which are not in the front, and the inspection of "im" are finished, and the subsequent wafer "11" is first transported out from the inspection module ,1, TRSd. Second, the wafer "12" is transferred from the TRSc to the inspection module, and the wafer "13" is placed in the TRSc. In Fig. 7 (a) and (b), respectively, in the 27th cycle, the ready portion ♦ is given with the transport _, and the control of the transport arm 4 is made clear === 20 ':S > Group Ei The output of the if^ signal is ready to be signaled from the inspection mode. Weaving, here, the next ready signal for the shipment to the next shipment is sent to the ready signal from the wafer cassette handling station 21. At this time, because ^-ITRS1 is transported from the TRSc to the inspection module. After ordering '...,', the wafer "12" will be issued: a type of crystal. This embodiment is not the same as Ε2, Ε3 私 岐 岐 岐 晶 晶 晶 晶 晶 晶 晶 晶 SI SI SI SI SI SI SI SI SI SI SI SI SI SI SI SI SI SI SI SI SI SI SI SI SI SI SI SI SI SI SI SI SI The state 'because it can be assigned to the crystal _ processing number than the Japanese yen' than the processing number of the larger wafer, so that it is shipped earlier from the inspection module E1 (E2), that is, about the inspection module E1 (E2, E3) The operation of the wafer = because the wafer overrun procedure is allowed, so that it is possible to reduce the unnecessary time spent waiting for the processing, the modulo, and the group El (E2, E3). Therefore, the throughput (production efficiency) can be increased. Then, because the wafer transport inspection module E1 (Qiao, E3) is forbidden to overtake the wafer, it will not be generated in one inspection module, and the first batch will be the first. After the wafer is entered, the last wafer of the previous batch is immediately followed to cause a problem with the processing program change. In addition, the wafer-based transport path can be used to cool or heat the substrate, and the substrate can be cooled or heated by a cooling module for substrate cooling or a heating module for substrate heating. The module that transmits both can be used to transfer the wafer from the substrate wafer cassette to the processing station. In this case, the processing module is also used as the transfer module TRS1. In this case, as in the case of 21 1335617, it is explained in the control of the transport arm 4, that is, in the cycle time where the stagnation time of TRS1 has been determined and ^ is rounded. From the crystal_box loading station, & ^, it must be in the transit time of the slave station S1; and the time from the processing station & receiving the round to the processing ^ remaining time, for the face _ (E2 , &) into === However, so that the wafer W from the subsequent transfer module TJ ^ 曰 by the real (four) when it is simply controlled to make its end of the coincidence = I transfer. This is because if the stagnation time in the 峨丨 峨丨 ( ( ( ( ( ( ( ( ( ( ( ( TG TG TG TG TG TG TG TG TG TG TG TG TG TG TG TG TG TG TG TG TG TG TG TG TG TG TG TG TG TG TG TG TG When it comes out, from this point to το is; see and 匕1 will be more than twice the S:rps seconds::=

EiaTs，m^faTRsd ： 先前的晶圓從傳J模變成在之後當藉由主臂26Α將 將 運入到TRS1 〇如此之後 又，为太=B」攸檢查模組訂運送到傳遞模組TRSd。 檢查；也可以摆^對晶隨盒C内的晶圓全部都進行 處理站ςι、隹二斤""擇的曰曰圓進行檢查。另外，也可以不對在 為了丁处理而回到晶圓厘盒C的晶圓進行檢查，而是對於 = 顯織置的外部被帶入載放部22 2圓 24及運送臂4，相同地藉由檢查模組 22 丄幻5617 【圖式簡單說明】 圖1係顯示本發明之塗布、顯影裝置之一實施型態之俯視圖。 圖2係顯示該塗布、顯影襄置之外觀立體圖。 圖3係顯示該塗布、顯影裝置之概略配置的侧視圖。 圖4係顯示該塗布、顯影裝置之基板流程的說明圖。 計書本發明中’用以顯示檢查站内基板動態之運送 辞旬係顯示在比較彳料’用以_示檢查㈣基板動態之運送 δΤ s’j的模擬說明圖。 ，7係顯示在該運送賴的—個循環之中，使檢查模組及傳 遞模組的就緒訊號與基板的動態相互對應之說明圖。 顯不在該?送計劃的—個循環之中，使檢查模組及傳 遞核、，且的;^緒減與基板的動態相互對應之說明圖。 圖。圖9侧示習知的塗布、顯純置中基板的處理流程之俯視 【主要元件符號說明】 4〜 '運送臂 4A' 〜塗布裝置 11' 〜晶圓匣盒裝卸站 12' 〜檢查站 13' 〜處理站 14^- 〜介面站 15' 〜傳遞臂 16' 〜運送臂 2L· 〜晶圓匣盒裝卸站 22' 〜載放部 23^ 〜開關部 24' 〜傳遞臂 23 1335617 25A〜棚架模組 25B〜棚架模組 25C〜棚架模組 26A〜主臂 26B〜主臂 27〜臂部 28A〜液體處理模組 28B〜液體處理模組 29〜處理容器 31〜傳遞臂 32A〜棚架模組 32B〜棚架模組 33〜傳遞臂 40〜檢查站 200〜控制部 C〜晶圓匣盒 COT〜塗布裝置 CPL1〜冷卻模組 CPL2〜冷卻模組 CPL3〜冷卻模組 DEV〜顯影裝置 E1〜檢查模組 E2〜檢查模組 E3〜檢查模組 G〜連接部位 LHP1〜加熱模組 LHP2〜加熱模組 PEB〜加熱模組 S1〜處理站 (S ) 24 1335617EiaTs, m^faTRsd: The previous wafer is transferred from the J mode to the later. When the main arm 26 is used, it will be transported to the TRS1. After that, the package is sent to the transfer module TRSd. . Check; you can also check the wafers in the crystal cassette C for all the processing stations ςι, 隹 斤 &"" In addition, the wafer returned to the wafer cassette C for the dicing process may not be inspected, but the outside of the display woven fabric may be carried into the placement unit 22 2 circle 24 and the transport arm 4, and the same borrowing may be used. Fig. 1 is a plan view showing an embodiment of the coating and developing device of the present invention. Fig. 2 is a perspective view showing the appearance of the coating and developing device. Fig. 3 is a side view showing a schematic configuration of the coating and developing device. Fig. 4 is an explanatory view showing a flow of a substrate of the coating and developing device. In the present invention, the transmission of the substrate dynamics in the inspection station is shown in the comparison, and the simulation of the substrate dynamics δ Τ s'j is shown. The 7 series shows an explanatory diagram in which the read signal of the inspection module and the transfer module and the dynamics of the substrate are mutually corresponded in the cycle of the transport. In the loop of the delivery plan, the inspection module and the transfer core are replaced with an explanatory diagram corresponding to the dynamics of the substrate. Figure. Figure 9 is a side view showing the processing flow of a conventional coated and purely centered substrate. [Main component symbol description] 4~ 'Transport arm 4A' ~ Coating device 11' ~ Wafer cassette loading and unloading station 12' ~ Checkpoint 13' ~ processing station 14^- ~ interface station 15' ~ transfer arm 16' ~ transport arm 2L · wafer cassette loading and unloading station 22' ~ placement part 23 ^ ~ switch part 24' ~ transfer arm 23 1335617 25A ~ Scaffolding module 25B - Scaffolding module 25C - Scaffolding module 26A - Main arm 26B - Main arm 27 - Arm 28A - Liquid processing module 28B - Liquid processing module 29 - Processing container 31 - Transfer arm 32A ~ Scaffolding module 32B ~ Shelving module 33 - Transfer arm 40 ~ Inspection station 200 ~ Control part C ~ Wafer cassette COT ~ Coating apparatus CPL1 ~ Cooling module CPL2 ~ Cooling module CPL3 ~ Cooling module DEV~ Developing device E1 to inspection module E2 to inspection module E3 to inspection module G to connection portion LHP1 to heating module LHP2 to heating module PEB to heating module S1 to processing station (S) 24 1335617

S2〜 第1介面部 S3〜第2介面部 S4〜丨 曝光裝置 TO〜循環時間終了時點 TRS1 〜傳遞模組 TRS2 〜傳遞模組 TRS3 〜傳遞模組 TRS4 〜傳遞模組 TRSa 〜傳遞模組 TRSb 〜傳遞模組 TRSc 〜傳遞模組 TRSd 〜傳遞模組 W〜晶圓 Wn〜 第η個晶圓 (S ) 25S2~1st face S3~2nd face face S4~丨Exposure device TO~End of cycle time point TRS1~Transfer module TRS2~Transfer module TRS3~Transfer module TRS4~Transfer module TRSa~Transfer module TRSb~ Transfer module TRSc ~ transfer module TRSd ~ transfer module W ~ wafer Wn ~ nth wafer (S) 25

Claims (1)

1335617 2010年6月如曰修正替換頁 ff年έ月夕日修 096110732 (無劃線版） 十、申請專利範圍： ^ =種塗布、顯影裝置，其特徵為包含： 借值ΐΞΞ盒裝卸站’載放收納有複數片基板的晶_盒，並具 、^风構，用以在與晶圓匣盒之間進行基板的傳遞； 苴=理站’具備複數之處理模組，用以對從晶圓g盒所取出的 布，及對光阻塗布完且曝光後的基板進行顯影 或疋頻影丽後的處理； 只以 ^細第私機構’設於該處理軸，相對於該複數之處理 ΐΐ經路徑依序運送基板’且繞循環路徑—周的循環時 詈2二f該處理站接收塗布有光阻之基板並傳遞至曝光裝 裝置接收曝秘之基板並傳遞至該處理站； 於杏具備碰之檢雜組，用㈣完成處理之基板進行 杈查二且檢查所需的時間彼此各不相同； 槪、仃 弟2基板運送機構，設於該檢杳 ， 基板的傳遞；及 在^奴放之铋查杈組之間進行 控制部，用以控制該第2基板運送機構. 功能其中，該控制部具備對該第2基板運送機構進行以下控制的 將其編跑錢料购、的基板開始， 成的'之_，將檢查完 2.如申請專利範圍第1項之塗布、顯 晶圓®盒裝卸站内的傳遞機構與第2盖板^更具備用以在 一汉妥迗機構之間，進行基 26 1335617 096110732 (無劃線版） 遞而設的—方之傳遞模組及另-方之傳遞模組；其中，該 二成二制晶圓匣盒裝卸站内的傳遞機構’以使在處理站 ^ ^ίΪ Ϊ板被傳遞到晶_盒，將基板從晶_盒取出並傳 的傳遞模組，另外，將檢查終了的基板從另—方的傳 遞杈組傳遞到晶圓匣盒。 々日11寻 心t如申請專利範圍第2項之塗布、顯影裝置，其中，妙止，丨 控’靖在處_完成纽縣板 1甲取出並傳遞到該一方之傳遞模組。 4. 如申凊專利範圍第2項之塗布、顯 i :係卸站内的傳遞機構，、俾㈣了檢查以 :傳ίίί部被帶入的晶，盒取出基板，傳遞到該-方 5. ^申請專利範圍第2至4項中任—項之塗布、 八中’ 5玄晶圓H金裝卸站内的傳遞機構 士、直’ 該-方之傳遞模組或另一方之傳遞二:f該，間之内對 基板的傳遞。力万之傳顧組中的任一方，僅進行-次 其中6.如申請專利細第丨至4項中任—項之塗布、顯影裝置， 來自晶圓£盒裝卸站的基板，係藉 遞到處理站的處理模組； 9田弟2基扳乂迗機構被傳 而该控制部係控制第2基板運送施娃 扣除將基板從晶圓g盒裝卸站運送 $環時間中 來自處理站的基板而運送的運送時運騎間，與接收 查模組進行基板_遞。 W相嶋㈣間之中，對檢 含：7. -種塗布、顯影裝置的控制方法，而此塗布、顯影裝置包 晶圓匣盒裝卸站，載放收納有和 備傳遞機構，用以在與晶圓匣各=土板的晶圓匣盒，並呈 處理站，具備複數之處 1335617 2010年厶月多ί>日修正替換頁 096110732 (·&割後版） 基板進行光阻的塗布、顯影，或是前後的處理； …一 周的循環時 間已經事先決定 模於該處理_ ’相對於該複數之處理 稹、、且Λ3者循％路徑依序運送基板，且繞循環路徑一 Ϊ，自龍處理站接收塗布有光阻之基板並傳遞至曝光裳 =士光裝置接收曝光後之基板並傳遞至該處理站； 、 才双查站，具備複數之檢查模組，用以 之基Ϊ進行檢查，且檢查所需的時間彼此===元成處理 弟2基板運送機構，設於該檢查站 -之間進行 基板的傳ί 丁基板的傳遞，並在職數之檢查模組- 此塗布 外出装置的控制方法之特徵在於包含下列的步驟： 先進行處理的步驟；*基板運运機構就將該基板的運送優 入檢板祕料射賴糾、祕板服，將其運 板從檢查触處財#ϋ大小H雜査終了的基 基板：遞二r，傳遞模組及另==之間進行 =該鲜、頭影裝置的控制方法更包含下列 的步驟地轉完成處理的基板，藉由傳遞機構傳遞到晶圓g盒 以及從晶_盒中取錄板，傳遞到該—方之傳遞模組的步驟·· 28 13^^01/ 朴 丨096110732 (無劃線版)' 晶構將檢查終了的基板從另—方的傳遞模組傳遞到 中，專利範圍第8項之塗布、顯影裝置的控制方法，其1335617 In June 2010, the revised replacement page ff, the year of the moon, the repair of 096110732 (no underlined version), the scope of application for patent: ^ = a coating and developing device, characterized by: including the value of the box loading and unloading station' The crystal cassette containing a plurality of substrates is placed, and the wind is configured to transfer the substrate between the wafer cassette and the wafer cassette; the 苴=理站' has a plurality of processing modules for The cloth taken out from the wafer g-box and the substrate after the photoresist coating and the exposed substrate are subjected to development or processing; only the fine-grained private mechanism is disposed on the processing axis, relative to the plural Processing the sputum path to sequentially transport the substrate 'and the cycle path - the cycle of the cycle 詈 2 2 f The processing station receives the substrate coated with the photoresist and transmits it to the exposure device to receive the exposed substrate and transfer to the processing station; Yu Xing has the inspection group, and the time required for the inspection is performed on the substrate that has been processed (4), and the time required for the inspection is different from each other; the substrate transport mechanism of the 槪, 仃 2 is set at the inspection, the transfer of the substrate; Between the 奴 放 铋 铋 铋 铋The control unit is configured to control the second substrate transport mechanism. The control unit includes a substrate that is controlled by the second substrate transport mechanism and is started to be purchased. 2. After the application, the transfer mechanism in the coating, the Wafer® box loading and unloading station and the second cover ^ are further provided for the base 26 1335617 096110732 ( No-dash version) - the transfer module of the square and the transfer module of the other side; wherein the transfer mechanism in the two-two wafer cassette loading and unloading station is used to make the processing station ^ ^ίΪ The raft is transferred to the crystal cassette, the transfer module is taken out from the crystal cassette, and the final inspection substrate is transferred from the other transfer raft to the wafer cassette. The next day, I found the coating and developing device of the second item of patent application. Among them, the control is completed, and the control unit is taken out and passed to the transfer module of the party. 4. For example, in the application of the second paragraph of the patent scope, the transfer mechanism in the unloading station, and (4) the inspection to: transfer the crystals that are brought in, the cassette is taken out, and the substrate is transferred to the square. ^Application of the scope of the patent range 2 to 4, the transfer mechanism in the 8th '5 Xuan wafer H gold loading and unloading station, the direct 'the transfer module of the square or the other side of the transfer two: f , the transfer of the substrate to the inside. Any one of the Groups of Liwanzhi Group will only carry out the coating and developing device, such as the application for the patents from the fourth to the fourth, and the substrate from the wafer box loading and unloading station. Handed to the processing module of the processing station; 9Tiandi 2 base pulling mechanism is transmitted and the control unit controls the second substrate transporting and deducting the substrate to be transported from the wafer g-box loading and unloading station. The carrier of the station is transported at the time of transportation, and the receiving module is used to perform the substrate transfer. Among the W phase(4), the test includes: 7. A method for controlling the coating and developing device, and the coating and developing device includes a wafer cassette loading and unloading station, and a loading and receiving device is provided for The wafer cassette with the wafer = = soil plate, and is a processing station, which has a plurality of places 1335617 2010 厶月多ί> 日修正 replacement page 096110732 (·& cut version) substrate for photoresist coating , development, or before and after processing; ... the cycle time of one week has been determined in advance in the process _ 'relative to the processing of the complex number, and Λ3 by the % path sequentially transport the substrate, and around the cycle path, Receiving the substrate coated with the photoresist from the dragon processing station and transmitting it to the substrate after receiving the exposure and transmitting to the processing station; and the double check station, having a plurality of inspection modules for the basis of The inspection is performed, and the time required for the inspection is mutually === yuan processing, the second substrate transport mechanism is disposed, and the transfer of the substrate is performed between the inspection stations - and the inspection module of the job number - the coating Control of the outgoing device The method is characterized in that the following steps are included: the step of processing first; the substrate transporting mechanism is superior to the board of the board, and the board is taken from the inspection board, and the board is transported from the inspection.基 size H end of the base substrate: hand two r, transfer module and another == between the = fresh, cephalometric device control method further includes the following steps to complete the processing of the substrate, by the transmission mechanism Passing to the wafer g box and taking the board from the crystal_box, passing it to the transfer module of the square. · 28 13^^01/ Park 096110732 (no underlined version)' The crystal structure will be checked. The substrate is transferred from the other-side transfer module to the control method of the coating and developing device of the patent scope 8 顯影裝_ 基板，係自為了檢查而從塗布^ ιη p破可進之日日圓匣盒所取出的基板。·· 中，利範圍第8項之塗布、顯影裝置的控制方法，省 基板 方的傳遞模組之基板，係在處理站被處理過的， 的控月乾圍第8至1〇項中任一項之塗布、顯影裝置 環ί間之內斟;中，該晶圓匣盒裝卸站内的傳遞機構，係在該循 —方之傳遞模組或另-方之傳遞模組中的任-方，僅進仃一次基板的傳遞。 的控i=，请其專中利範圍第7至1〇項中任一項之塗布、顯影裝置 祐值夏裝钟站運送來的基板’係藉由第2基板運送機構 被傳遞到處理站的處理模組，而 土攸风稱 對檢查模組進行基板傳遞的步驟，^ 將基板從晶圓_站運送到處;站;=== 處理送的時間後所剩餘的=進=收來自 雜^的塗布、及 ^，其特徵在於：該電腦程式係實施如^專: 項中任—項之塗布、顯影裝置的控制方法^糾域弟7至10 十一、圖式··The developing device _ the substrate is a substrate taken out from the Japanese yen box which is detachable from the coating for the purpose of inspection. ······························································ In the coating and developing device, the transfer mechanism in the wafer cassette loading and unloading station is any one of the transfer module or the other transfer module. Fang, only the transfer of the substrate once. The control i=, the coating and developing device of any one of the items 7 to 1 of the special interest range is transferred to the processing station by the second substrate transport mechanism. The module is processed, and the soil wind is called the step of transferring the substrate to the inspection module, and the substrate is transported from the wafer to the station; the station; === the remaining time after processing the sending time = input = receiving from the ^ The coating and the ^ are characterized in that the computer program is implemented as a coating method of the coating device and the developing device of the item: ^ 静 domain brother 7 to 10 十一, schema ·