TWI335051B - - Google Patents

Description

1335051 九、發明說明： 【發明所屬之技術領域】 法’特別是關於 進行接合之接合 本發明係關於一種接合裝置及接合方 藉由筒夾從晶圓環吸引保持並搬送晶片以 裝置及接合方法。1335051 IX. Description of the Invention: [Technical Field of the Invention] The method of the present invention relates to a bonding device and a bonding method, a device for bonding and holding a wafer from a wafer ring by a collet, and a bonding method .

L亢刖筏術J •s-hj α 明晶L亢刖筏术 J • s-hj α Mingjing

為了將半導體元件等晶片接合至電路基板等進行所 粒拾取的處理步驟，其藉由筒炎從將複數個晶片排列 配置而保持的晶片托盤，或從將完成晶片切割的晶片保持 在擴張膜上的晶圓環吸引保持晶片並搬送至接合台等^此 步驟中，較佳為’除去附著在晶片上的㈣， 片等。 吁 例如，專利文獻丨揭示一種送風管，係於以預先對準 用具將被接合構件；t位，接著，藉由接合具拾取被接合構 件並移動到既定位置進行接合之接合裝置中，藉由送風管 除去被接合構件及其周邊的異物。在此，藉由預先對準用 2修正被接合構件之傾斜，接著藉由被接合構件固定用真 空吸引管來固^被接合構件，較後，藉由送風管之送風 除去異物，此送風在固定用真空吸引結束前會停止，接著， 藉由接合具拾取被接合構件。 又專利文獻2揭示一種異物除去方法，其將洗淨流 ，吹送至+導體裝置&lt;内部風扇的同肖，吸引吹送的洗淨 μ體與内部風扇内的異物。在此，將洗淨頭覆蓋在内部風 扇本體的插槽上’自吹送孔供應壓縮空氣，將附著在插槽 6 内的異物吹起，ό 者，亦揭示有=頭的吸引孔吸引插槽内的空氣。再 藉由此除電用電厂送孔内設置除電用電極， 用電極將壓縮空氣離子化後進行吹送。 專利文獻1 :日本特開昭63-87728號公報 專利文獻2:日本特開平8·8219號公報 【發明内容】 近年來，對如厚度較薄的晶片、或所謂適用於 接：電係數較小的絕緣層）製程的晶片般易撓曲的晶。/的 ::::::益提高。與習知具有充分剛性的晶= 處上述阳片必須特別細心注意。 般晶=:it取厚度1〇〇&quot;m以上且具有充分剛性的-二錐5夾一 t會使用邊緣具有錐壁’能保持晶片外周的 夫，此錐筒爽以錐壁支持晶片外周，在晶片上方 “士 真 間以吸引保持晶片。如上述， 由=持晶片邊緣並真空吸引晶片一侧的面故厚度… = 丨性較低的晶片可能會撓曲、造成損傷。因此為了 -曲，使用具有平坦面並使此平坦面接觸晶片之一側 的面之平面筒夾。 由於褴知錐筒夾僅與晶片外周接觸故即使晶 上面存在有-些異物亦不會因此造成損傷，但由於平面 ‘央…曰片上面接觸，故晶片上若有異物或晶片的碎片 \則晶片與筒央之間會央雜晶片碎片，提高造成晶片上 面知傷的危險性。尤其’近年來生產的薄型且使用 技術的晶片，由於剛性較低，相較以往具有容易造成損傷 7 1335051 之傾向。 再者，習知技術揭示藉由送風將異物等吹走之技術， 但吹走的異物若附著於平面筒夾上，則即使是在以往對剛 性較強的晶片不致於造成損傷的大小及頻度，對剛性較低 的晶片亦會造成損傷。又，為了充分進行異物除去，考慮 加強送風之吹送方法，但若送風太強，則會導致晶片本身 被吹走。如上述’習知技術對於拾取易撓曲且剛性較低之 晶片’其異物除去的技術仍不足。 本發明之目的在於提供一種接合裝置，其對於晶片之 拾取，能進一步充分進行異物除去。 本發明之接合裝置’其特徵在於’係具備：晶圓環， 係貼合於擴張膜上，用以保持已完成晶片切割之晶圓；上 頂台，具有在既定時點將晶圓環上之任意晶片上頂之上頂 銷；平面筒夾，係用以吸引保持並搬送藉由上頂銷上頂的 晶片，與晶片相對向之面為平坦；除電器，用以對晶圓環 上完成晶片切割之晶圓與平面筒夾之周圍供應離子化氣 體，以及吹送機構，係配置在平面筒夾附近，僅在上頂時 點前，對上頂的任意晶片吹送離子化氣體。 π又’本發明之接合裝置，其特徵在於，係具備：晶圓 環，係貼合於擴張膜上，用以保持已完成晶片切割之晶圓； 上頂台，具有在既定時點將晶圓環上之任意晶片上頂之上 頂銷；平面筒 係用以吸引保持並搬送藉由上頂銷上頂 =曰曰片’與晶片相對向之面為平坦；&amp;電器用以對晶圓 環上完成晶片切割之晶圓與平面筒夾之龍供應離子化氣 8 1335051 體，以及吹送機構，係連接於平面筒夾，僅在上頂時點前， 對上頂的任意晶片吹送離子化氣體；平面筒夾具有開口於 平坦面之孔，通過此孔可在吸引晶片之減壓吸引與對晶片 吹送離子化氣體之間做切換。 々又，於本發明之接合裝置中，較佳為，具備設置於平 面筒夾附近之導管’其用以吸引藉由吹送機構及除電器而 離子化之氣體。 又，本發明之接合方法，係使用下述元件 曰曰曰圓％ ’係貼合於擴張膜上，用以保持&amp;完成晶片切割之 明圓，上頂台’具有在既定時點將晶圓環上之任意晶片上 頂之上頂冑，以及平面筒夾，係用以吸引保持並搬送藉由 上頂銷上頂的晶片，與晶片相對向之面為平坦；其特徵在 =包^作動步驟，在進行接合前使除電胃（用以對晶圓 衣上疋成阳片㈣之晶圓與平面筒失之周圍供應離子化氣 體）作動；吹送步驟，係對位於平面筒夹拾取位置之Μ 送離子化氣體；上頂步驟，係在離子化氣體之 人…I ’將該晶片從擴張膜朝向平 頂；以及拾取步驟，係藉 卞-面上 稭田十面筒夹拾取該晶片。 依據上述構成，由於具備 丹爾人送機構（配置在平面筒夾 附近，僅在上頂時點前， 卞卸η灭 ^ ^ ^ ^ 于上頂的任意晶片吹送離子化氣 體），故於上頂晶片容易由孚 沣斟曰h〜 肖由千面琦夹所吸引的狀態下，無 法對曰日片吹送氣體。據此， 而僅一去曰w T防止吹送之氣體吹走晶片， 而僅人走日日片周圍的異物。又 止當吹送時之靜電。 1體離子化’故能防 9 曰又’由於具備除電器（用以對晶圓環上 之晶圓與平面筒夾之 π成日日片切割 jEg , ^ 圍供應離子化氣體），故可將曰m ¥上完成晶片切割之晶圓與 圓 物再次附著於其等上。“ h電防止吹走的異 等除電需要數秒的時間。由…=子化氣體將裝置 間短，故較佳4，當使用接人二拾取周期比此除電時 體之供應。 ^用接。裝料，持續進行離子化氣 又，平面筒夾具有開口於曰 吸引θ κ M n —面之孔，通過此孔可在 =二之減屢吸引與對晶片吹送離子化氣邀之間做切 上方翻h㈣h 笔赁嘴等。又，以氣體從晶片 逆二方式進行對晶片之離子化氣體之吹 送，故能以更高效率除去平面筒夾下方之異物。 由於在平面筒夹附近設置導管（用以吸引藉由吹 、機構及除電益而離子化之氣體），故能高效率集中並排 除吹走的異物與藉由除電除去的異物等。 又，依據上述構成，於接合作業中首先，除電器開 始作動’接著’對晶片附近吹送離子化氣體，吹送結束後， 上頂該晶片並藉由平面筒炎拾取。據此，能確保充分的除 電時間’從晶片上吹走異物，且防止其再次附著。 【實施方式】 以下，使用圖式詳細說明本發明之實施形態。以下， 以晶粒接合裝置之拾取處理部分為中心說明本發明之接合 裝置’但除了晶粒接合裝置以外，亦可為包括拾取晶片等 電子元件之處理之裝置。例如’亦可為倒裝晶片接合裝置。 10 1335051 (實施例1 ) 圖1係接合裝置10之拾取處理所必要的部分之構成 圖。此接合裝置10’係拾取晶片並接合、配置於電路基板 之所謂晶粒接合裝置。在此’雖不是接合裝置之構成 元件’但亦圖示複數個晶片8。 接合裝置10具備有：晶圓環12 ’用以排列保持將晶 圓進行晶片切割後之複數個晶片8;上頂台16,係具有在 既定時點將晶圓環12上之任意晶片8上頂之上頂銷18 ; • 筒失2〇，用以吸引保持並搬送晶片8 ;除電器30，用以對 a曰圓環12上完成晶片切割之晶圓與筒炎2〇之周圍供應離 子化氣體；吹送部40，用以對配置於筒夹2〇附近之晶片 8吹送離子化氣體；導管部5〇，用以吸引離子化氣體丨以 及吸引部60，係連接於筒夾20。 又，接合裝置10進一步具備有：晶圓環致動器7〇, 用以驅動晶圓環12使其移動於平面内的任意位置；上頂 致動器72,用以驅動上頂銷18使其進行上頂；筒夾致動 籲S 74 ’用以將筒夾20驅動於上下方向；以及控制部8〇， 用以控制此等元件之整體動作。 作為一般接合處理步驟中的拾取處理的控制之控制部 80具備有·除電作動處理模組82，對晶圓環12上完成晶 片切割之晶圓及筒夹20供應離子化氣體並進行除電；定 位處理模組84，用以驅動晶圓環12使其移動將晶片8 定位於筒夫20下方；吹送處理模組86,用以對晶片8吹 达離子化氣體；上頂處理模組88，用以將晶片8朝向筒夫 11 1335051 20進行上頂；以及拾取處理模組9〇，以筒夾2〇吸引保持 ，拾取晶片8。此等功能可藉由軟體實現，具體而言可 藉由執订對應之接合程式實現。一部分此等功能亦可藉由 硬體實現。 晶圓環12具有排列配置並保持複數個晶片的功能如 ^述/曰圓環下部酉己置有具備上頂銷18的上頂台16。 曰曰圓％ 12及上頂銷丨8的動作係在控制部8〇的控制下進A wafer tray for holding a wafer such as a semiconductor element to a circuit substrate or the like for picking up, or a wafer tray held by arranging a plurality of wafers by tube inflammation, or a wafer for cutting the completed wafer on the expanded film The wafer ring is sucked to hold the wafer and transported to the bonding pad or the like. In this step, it is preferable to remove (four), a sheet, or the like attached to the wafer. For example, the patent document discloses a supply duct that is to be engaged with a pre-aligned tool; the t-position, and then, by the jig, picks up the joined member and moves to a predetermined position for engagement, by means of the joint device The air supply duct removes the foreign matter of the member to be joined and its surroundings. Here, the inclination of the member to be joined is corrected by the pre-alignment 2, and then the member to be joined is fixed by the vacuum suction tube for fixing the member to be joined, and then the foreign matter is removed by the air blow of the air supply duct, and the air supply is fixed. The suction is stopped before the end of the vacuum suction, and then the joined member is picked up by the jig. Further, Patent Document 2 discloses a method of removing foreign matter, which blows the cleaning flow to the +conductor device &lt;the internal fan, and sucks the blown cleaning body and the foreign matter in the internal fan. Here, the cleaning head is covered on the slot of the inner fan body. 'The compressed air is supplied from the blowing hole, and the foreign matter adhering to the slot 6 is blown up, and the suction hole attracting the slot of the head is also revealed. The air inside. Further, an electrode for removing electricity is provided in the power supply hole of the power supply for removing electricity, and the compressed air is ionized by the electrode and then blown. [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. The insulating layer) is a wafer-like flexible crystal of the process. /:::::: Benefits improve. It is necessary to pay special attention to the above-mentioned positive film at the crystal where it is sufficiently rigid.晶晶=:it takes a thickness of 1〇〇&quot;m and has sufficient rigidity - the two cones 5 clips one will use the edge with a tapered wall' to keep the outer periphery of the wafer, this cone is supported by the cone wall to support the periphery of the wafer Above the wafer, "between the students, the wafer is held by the attraction. As mentioned above, the thickness of the wafer side is held by the edge of the wafer and the vacuum is attracted to the surface of the wafer.] = The wafer with lower conductivity may be deflected and damaged. Use a flat collet having a flat surface and contacting the flat surface to the side of the wafer. Since the cone clamp is only in contact with the outer periphery of the wafer, even if some foreign matter is present on the crystal, no damage is caused. Since the plane is in contact with the wafer, if there are foreign objects or fragments of the wafer on the wafer, the wafer will be chipped between the wafer and the tube, which will increase the risk of damage on the wafer. Especially in recent years. Thin and technology-friendly wafers have a tendency to cause damage to 7 1335051 due to their lower rigidity. Moreover, the prior art discloses a technique of blowing foreign matter by blowing air, but blowing away the difference If the object adheres to the flat collet, the size and frequency of damage to the highly rigid wafer will not be damaged, and the wafer with low rigidity will be damaged. In addition, in order to fully remove the foreign matter, consider strengthening. The blowing method of the air supply, but if the air supply is too strong, the wafer itself is blown away. As described above, the technique of picking out a flexible and low-rigidity wafer of the prior art is still insufficient. The invention provides a bonding apparatus capable of further sufficiently removing foreign matter for picking up a wafer. The bonding apparatus of the present invention is characterized in that: a wafer ring is attached to the expansion film for holding the completed wafer. a wafer to be cut; an upper stage having a top pin on top of any wafer on the wafer ring at a predetermined timing; a flat collet for attracting and transporting the wafer by the top of the upper pin, and The wafer is flat relative to the surface; the static eliminator is used to supply ionized gas around the wafer-cut wafer and the planar collet on the wafer ring, and the blower , is disposed in the vicinity of the flat collet, and blows the ionized gas to any of the upper top wafers only before the top top time point. π and 'the joint device of the present invention is characterized in that: the wafer ring is attached On the expanded film, the wafer for maintaining the wafer cutting is completed; the upper stage has a top pin on any wafer on the wafer ring at a predetermined timing; the flat tube is used for attracting and transporting The upper top pin top = the 曰曰 piece 'is flat relative to the wafer; the &amp; electrical appliance is used to supply the ionized gas 8 1335051 body to the wafer and the flat collet to complete the wafer cutting on the wafer ring, and The blowing mechanism is connected to the flat collet, and the ionized gas is blown to any of the upper top wafers only before the top top time point; the flat collet has a hole opening in the flat surface through which the decompression attraction of the attracting wafer is attracted. Switching is performed between blowing ionized gas to the wafer. Further, in the joining device of the present invention, it is preferable to provide a duct </ RTI> disposed near the flat collet for attracting a gas ionized by the blowing mechanism and the static eliminator. Moreover, the bonding method of the present invention uses the following elements to be attached to the expansion film to maintain &amp; the wafer to be finished, and the upper stage 'has the wafer at the same time point The top top of any of the wafers on the ring, and the flat collet, are used to attract and transport the wafer on top of the top pin, which is flat relative to the wafer; the feature is in the package a step of actuating the degassing stomach (for supplying ionized gas around the wafer and the flat tube of the wafer on the wafer) before the bonding; the blowing step is performed at the picking position of the flat collet Μ sending ionized gas; the topping step is performed by the person who ionizes the gas...I's the wafer from the expanded film toward the flat top; and the picking step, the wafer is picked up by the 十-faced ten-face collet. According to the above configuration, since the Dalker delivery mechanism is disposed (disposed in the vicinity of the flat collet, the ionizing gas is blown off by any wafer on the top of the top only before the top top point), In the state where the wafer is easily attracted by the 沣斟曰 沣斟曰 h ~ Xiao Yu Qian Qi Qi folder, it is impossible to blow the gas to the 曰 片. According to this, only one 曰w T prevents the blowing gas from blowing away the wafer, and only the foreign matter around the day piece is taken. Also stop the static electricity when blowing. 1 body ionization 'can prevent 9 曰 and 'Because of the de-energizer (for the wafer on the wafer ring and the flat collet π into the daily cutting jEg, ^ supply ionized gas), it can be The wafer and the wafer on which the wafer is cut are attached to the wafer on the 曰m ¥. "H power to prevent blow-off of the differential power-off takes a few seconds. By ... = sub-gas will be short between the devices, so it is better 4, when the use of the pick-up cycle is more than the supply of the body when the power is removed. ^ Use. Loading, continuing to ionize the gas. The flat collet has a hole that opens into the θ κ Mn surface, and the hole can be cut between the second attracting and the ion blowing gas to the wafer. Turning h(4)h on the top of the pen, etc. Further, the gas is blown from the wafer in the opposite manner to the ionized gas of the wafer, so that the foreign matter under the flat collet can be removed with higher efficiency. Since the duct is disposed near the flat collet ( In order to attract a gas that is ionized by blowing, a mechanism, and a device for removing electricity, it is possible to efficiently concentrate and eliminate foreign matter blown away and foreign matter removed by electricity removal. Further, according to the above configuration, first, in the joining operation, The de-energizer starts to act 'follow' to blow the ionized gas near the wafer. After the end of the blowing, the wafer is topped up and picked up by the flat tube inflammation. According to this, sufficient de-energization time can be ensured 'the foreign matter is blown away from the wafer, and [Embodiment] Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings. Hereinafter, the bonding apparatus of the present invention will be described focusing on the pick-up processing portion of the die bonding apparatus, except for the die bonding apparatus. It may also be a device including a process of picking up electronic components such as wafers. For example, it may be a flip chip bonding device. 10 1335051 (Embodiment 1) FIG. 1 is a configuration diagram of a portion necessary for picking up processing of the bonding device 10. The bonding device 10' is a so-called die bonding device that picks up a wafer and bonds it and arranges it on a circuit substrate. Here, although it is not a constituent element of the bonding device, a plurality of wafers 8 are also illustrated. The bonding device 10 is provided with a wafer ring 12' is used to arrange and hold a plurality of wafers 8 after the wafer is wafer-cut; the upper header 16 has a top pin 18 on top of any wafer 8 on the wafer ring 12 at a predetermined timing; 2〇, for attracting and transporting the wafer 8; the static eliminator 30 for supplying ionized gas around the wafer and the tube squeezing on the a 曰 ring 12; the blowing portion 40 The ionizing gas is blown to the wafer 8 disposed in the vicinity of the collet 2〇; the conduit portion 5 is configured to attract the ionized gas crucible and the suction portion 60, and is connected to the collet 20. Further, the bonding device 10 is further provided with a wafer ring actuator 7A for driving the wafer ring 12 to move anywhere in the plane; an upper top actuator 72 for driving the upper pin 18 for topping; The control unit 80 is configured to drive the collet 20 in the up and down direction, and the control unit 8 is configured to control the overall operation of the components. The control unit 80 as the control of the picking process in the general joining processing step is provided with In addition to the electro-operation processing module 82, the wafer-cut wafer and the collet 20 on the wafer ring 12 are supplied with ionized gas and neutralized; and the positioning processing module 84 is configured to drive the wafer ring 12 to move the wafer 8 Positioned below the tuber 20; a blowing processing module 86 for blowing the ionized gas to the wafer 8; an upper processing module 88 for topping the wafer 8 toward the tuft 11 1335051 20; and picking up the processing mold Group 9〇, attracted by the collet 2〇, picking crystal Slice 8. These functions can be implemented by software, in particular by binding the corresponding splicing program. Some of these functions can also be implemented by hardware. The wafer ring 12 has a function of arranging and holding a plurality of wafers. For example, the lower portion of the ring is provided with an upper header 16 having an upper top pin 18. The operation of the rounding % 12 and the upper top pin 8 is under the control of the control unit 8〇

订但其中，使晶圓環12移動，將任意晶片8定位在筒 夾20下方之動作’係藉由定位處理模組科的功能來進行， 又：於筒央20下方將晶片8上頂之動作，係藉由上頂處 理模組8 8之功能來進行。 晶圓環12係—種環狀治具（貼合表面具有黏著性且具 有伸展性之塑膠製擴張膜14)，藉由晶圓環致動器7〇之 驅動使其整體移動，能移動於與筒夾2()&lt;上下移動轴垂 直之平面内之任意位置。可使用χγζ驅動馬達作為 致動器70。 a複數個晶片8在分離狀態下，排列配置並保持於晶圓 環12^L，但在此之前必須進行以下步驟。首先，製作晶 圓’其藉由積體電路技術而排列配置有複數個晶片。再者， 此晶圓貼合於表面具有黏著性且具有伸展性的擴張膜Μ 表面。貼合有晶圓的擴張膜14裝載於晶圓環12上，在此 狀通下*置入晶片切自丨坡番 大 切割裝置在晶片切割裝置中，藉由圓 盤狀的旋轉刀具，以既宁門拓夕士 a 丹以既疋間距之方式加工用以將晶圓分離 成複數個晶片8的槽。藉由洗淨除去此時之切肩。接著， 12 1335051 利用擴張膜14的伸展性，使用適當分離用治具，在進行 晶片切割後的槽的部位切割晶圓。在晶圓環12上將擴張 膜14延伸並貼合’裝載於晶圓環12上。藉此，複數個晶 片8在藉由擴張膜14的黏著性而固定之狀態下，個別分 離°如此’複數個晶片8排列配置並保持於晶圓環12上。 上頂銷18，係從擴張膜14下側將藉由擴張膜14之黏However, the movement of the wafer ring 12 and the positioning of the arbitrary wafer 8 under the collet 20 is performed by the function of the positioning processing module, and the wafer 8 is placed under the cylinder 20 The action is performed by the function of the top processing module 88. The wafer ring 12 is a type of annular jig (a plastic expanded film 14 having an adhesive surface and having a stretchable surface), and is moved by the wafer ring actuator 7 to move the whole Any position in the plane perpendicular to the collet 2 () & up and down movement axis. A χγζ drive motor can be used as the actuator 70. a plurality of wafers 8 are arranged and held in the wafer ring 12L in a separated state, but the following steps must be performed before. First, a wafer is formed, which is arranged in a plurality of wafers by integrated circuit technology. Further, the wafer is bonded to the surface of the expanded film which is adhesive and extensible on the surface. The wafer-attached expanded film 14 is mounted on the wafer ring 12, and the wafer is cut into the wafer. The wafer is cut from the wafer cutting device by a disk-shaped rotary cutter. The Ningmen Tuoshi A Dan processed the grooves for separating the wafer into a plurality of wafers 8 in a manner of spacing. The shoulder is removed by washing at this time. Next, 12 1335051 utilizes the stretchability of the expanded film 14 to cut the wafer at the portion where the wafer is cut after the wafer is cut using an appropriate separation jig. The expanded film 14 is extended and bonded to the wafer ring 12 on the wafer ring 12. Thereby, the plurality of wafers 8 are individually separated in a state where they are fixed by the adhesiveness of the expanded film 14, so that the plurality of wafers 8 are arranged and held on the wafer ring 12. The upper pin 18 is adhered from the lower side of the expansion membrane 14 by the expansion membrane 14

著性來保持的晶片8上頂的銷，具有利用擴張膜14的伸 展性而容易使晶片8從擴張膜14上剝離的功能。上頂動 作，係將上頂台16往上頂，使其接近或接觸擴張膜Μ下 面，接著再將上頂銷18往上頂來進行。或，亦可於最初 即將上頂台16固定配置於接近擴張膜14之部位，接著再 將上頂銷18往上頂。上頂銷18沿設置於上頂台16之上 下方向導引件來上下移動。上頂銷18上下移動之位置， 係同夾20將晶片8拾取的所謂拾取位置。即，以與筒夾如 相對向之方式配置上頂们8’上頂銷18的上下移動轴愈 间夾20之拾取位置的上下移動軸係同軸配置。在控制部8〇 的上頂處理模組88之功能下，依照後述程序控制時點， 藉由上頂致動II 72來驅動上頂鎖18上頂。可使用活塞等 作為上頂致動器72。 筒夹20’係具有於拾取位置進行拾取並吸引保持晶片 :並搬送至下一個作業位*，例如，調整晶片傾斜等之 於電路基板上進行晶粒接合之接合位置等既定 =之功能之工具。筒夹20係具有以前端部份保持晶片8 的保持部、及開口於保持部的貫通…筒狀構件貫 13 1335051 通孔22連接於吸引部60 (閥64及真空源62串列配置而 構成）。在控制部80之拾取處理模組90之功能下，藉由 筒夾致動器74驅動筒夾20移動。可使用χγζ驅動馬達作 為筒夹致動器。尤其，驅動筒夾在拾取位置上下移動。即， 以下述方式驅動筒夾20移動：朝向藉由上頂銷18上頂的 晶片8而下降，以前端部分將其吸引保持並再次上昇，將 晶片8從具有黏著性之擴張膜14剝離。 圖2係表示與晶片8相對向之筒夾2〇之仰視圖。筒夾 2〇的底面係平坦面且貫通孔22開口在其中心，從貫通孔 22朝向外周設置複數個呈放射狀的淺槽24。因此，於拾 取位置，筒夾20下降接觸晶片8，當藉由連接於貫通孔22 的吸引部60將其吸引時，底面的平坦面整體會接觸晶片8 表面，藉由貫通孔22及槽24將晶片8吸引。如上述，底 面為平坦面、接觸晶片8表面整體並吸引保持之筒夾 稱為平面筒夾。藉由使用平面筒夾，在處理剛性較低且易 撓曲的晶片8時，藉由真空吸引晶片8，可使其不產生變 形而吸引保持。 除電器30具備有：加壓氣體源32、靜電消除器34 (ionizer)、喷嘴36’具有對晶圓環12上完成晶片切割 的晶圓及筒夾20關供應離子化氣體，將其等除電的功 能。在控制部80的除電作動處理模組82的控制下，將除 電器30的動作控制如下。例如，當筒夹或晶圓環η等因 某些原因而產生靜電時，除電係將其中和纟…般之構成 係以離子化氣體將產生靜電之電荷中#…般而言，以離 14 1335051 子化氣體將裝置或其元件之靜電除電需要數秒的時間。如 上述，離子化氣體之除電所需的除電時間比接合作業的周 期時間長，故由除電器30供應的離子化氣體，以低速^ 供應即足夠，但必須持續供應。因此’接合裝置…輸: 電源後，除電器30在進行接合作業前即開始作動，並維 持以低速的流速持續供應離子化氣體。 吹送部40係將加麗氣體源、42、閥44、靜電消除器μ' 2 48串聯而構成，具有從喷嘴48將離子化加遷氣體吹 二Γ片表面的功能。如上述’當使用適當的分離用治具 二曰曰圓分離出晶片8時，會產生細微的碎片等。或，因 复狁曰H e主 隹日0片8表面。吹送部40具有將 二片8表面吹走的功能。可使用乾燥壓縮空氣 縮器等作為加壓氣體源42β I原的愚 吹送部40之閥44的作叙，及士〜 # ^ 8(c ^ ^ ，、在控制部80之吹送處理 模、，且86之控制下進行，藉此， 迷、壓力、4昜；《主 控制離子化氣體之吹送流 及時點。以可充分除去附著於曰片8矣 面之異物等的流速及流量進行吹 著:…表 片8本身，在晶片8藉由擴 ' 為了不吹走晶 ^ fl % 、 的黏著性而穩固保持 之時間進订。即，在藉由上頂銷 暫時間内吹逆離早外γ 、日曰片8上頂則的短 求的周期時間非常短。例如丁接。所要 秒左右。即使在此短暫時間内，^如，吹送時間广為大约U 吹出的氣壓愿力為數咖左右從加屋乳體源42 氣流，亦可充分將附著在 的、：晶片8施加較強的 月8的一般異物除去。 15 1335051 靜電消除器46具有與除電器30之靜電消除器34相同 的功能，係具有將吹送氣體進行離子化之功能之裝置。如 上述，一般而言，吹送氣體係使用乾燥氣體，但若以較大 流速使其流動’則會有使晶片8及筒夾20等產生靜電之 問題。因此，吹送加壓氣體前以靜電消除器46將其離子 化。靜電消除器與吹送時點無關，恆處於作動狀態。由於 氣體之離子化本身會在瞬間進行，據此，可防止加壓氣體 之吹送所導致之靜電。 喷嘴48係用以限制離子化氣體之吹送方向之氣體供應 路，例如由管子等構成。如上述，於拾取位置，晶圓環12 在平面内移動，但筒夾20、上頂銷18、及上頂的晶片8 之平面位置不會改變，故以朝向此拾取位置的晶片8表面 之方式配置噴嘴48前端。又，以不會干涉晶圓環12的平 面移動之方式配置喷嘴48前端。舉配置之一例，可在距 離晶圓環12上面大約i〇mm的上方，且喷嘴48前端可到 達平面上距離上頂銷18之平面中心位置大約1〇mm之處之 方式來配置。 上述之例中，吹送時點控制如下。即，驅動晶圓環12 移動，接著，應拾取的晶片8定位於拾取位置後，藉由吹 送部40之功能立即於大約〇1秒之間，對晶片8表面吹送 離子化氣體。此大約0.1秒的吹送結束後，立即驅動上頂 銷18進订上頂，將藉由吹送除去異物等的晶片8朝向筒 夾20上頂《即，僅在上頂時點前進行短暫時間的吹送。 如上述，吹送部40具有類似除電器30之構成，但不 16 同點在於·除電H 3G肖續供應低速的離子化氣體，需要 某程度的時間將晶圓環12及筒失20除電，相對於此，吹 ^部40於短時間内對晶片8吹送具有相當流逮的離子化 氣體人走附著於晶片8之異物等。即除電器的靜 電消除器34|有產生除電用的離子化氣體之功能，但吹 送部40的靜電消除器46為了防止吹送用氣體導致靜電， 具有將氣體離子化之功能。 導吕邛50具備有.真空源52及吸引導管54，具有將 稭由除電器30而離子化之氣體及藉由吹送部4〇而離子化 之氣體匯集排出的功能。較佳為，以拾取位置為中心並在 吹送部40之噴嘴48的相反側之幾乎呈對稱的位置關係之 方式配置吸引導管54。除了在與吹送部4〇之喷嘴Μ前端 相對向之侧壁外，亦在頂部及底面部設置吸引導管54之The pin on the top of the wafer 8 held by the property has a function of easily peeling off the wafer 8 from the expanded film 14 by the stretchability of the expanded film 14. The top action is to top the upper table 16 so that it approaches or contacts the underside of the expanded membrane, and then the top pin 18 is topped up. Alternatively, the upper stage 16 may be fixedly disposed at a position close to the expansion membrane 14 and then the upper top pin 18 may be topped up. The upper top pin 18 is moved up and down along a guide member provided above and below the upper table 16. The position at which the upper top pin 18 moves up and down is the so-called picking position at which the wafer 20 is picked up by the clip 20. That is, the vertical movement axis of the pick-up position of the upper and lower moving shaft end clamps 20 of the top pins 18 of the upper tops 8' is disposed coaxially with respect to the collet. Under the function of the top processing module 88 of the control unit 8A, the top top 18 is driven up by the top top actuation II 72 in accordance with the program control timing described later. A piston or the like can be used as the upper top actuator 72. The collet 20' has a function of picking up at a pick-up position and sucking and holding the wafer: and transporting it to the next work position*, for example, a function of adjusting a wafer tilt or the like to a predetermined position such as a bonding position of a die bond on a circuit board. . The collet 20 has a holding portion for holding the wafer 8 at the distal end portion, and a through-opening of the cylindrical member 13 1335051. The through hole 22 is connected to the suction portion 60 (the valve 64 and the vacuum source 62 are arranged in series). ). Under the function of the pickup processing module 90 of the control unit 80, the collet 20 is driven to move by the collet actuator 74. A χγζ drive motor can be used as the collet actuator. In particular, the drive collet moves up and down at the picking position. Namely, the collet 20 is driven to move in such a manner as to be lowered toward the wafer 8 which is topped by the upper top pin 18, sucked and held by the leading end portion, and raised again, and the wafer 8 is peeled off from the adhesive film 14 having adhesiveness. Fig. 2 is a bottom plan view showing the collet 2 opposite to the wafer 8. The bottom surface of the collet 2 is a flat surface, and the through hole 22 is opened at the center thereof, and a plurality of radial shallow grooves 24 are provided from the through hole 22 toward the outer circumference. Therefore, at the pickup position, the collet 20 is lowered to contact the wafer 8, and when it is attracted by the suction portion 60 connected to the through hole 22, the flat surface of the bottom surface as a whole contacts the surface of the wafer 8, through the through hole 22 and the groove 24. The wafer 8 is attracted. As described above, the collet having a flat surface on the bottom surface and contacting the entire surface of the wafer 8 and sucking and holding is called a flat collet. By using the flat collet, when the wafer 8 having low rigidity and flexibility is processed, the wafer 8 is attracted by vacuum, so that it can be attracted without being deformed. The static eliminator 30 includes a pressurized gas source 32, a static eliminator 34 (ionizer), and a nozzle 36' that supplies the ionized gas to the wafer and the collet 20 on the wafer ring 12, and removes the ionized gas. The function. Under the control of the static elimination operation processing module 82 of the control unit 80, the operation of the static eliminator 30 is controlled as follows. For example, when the collet or the wafer ring η or the like generates static electricity for some reason, the static electricity system combines the neutralization and the like, and the ionized gas generates an electrostatic charge. 1335051 The gasification of the device or its components by electrostatic discharge takes several seconds. As described above, since the static elimination time required for the elimination of the ionized gas is longer than the period of the joining operation, the ionized gas supplied from the static eliminator 30 is supplied at a low speed, but it must be continuously supplied. Therefore, after the "coupling device" is turned on, the neutralizer 30 starts to operate before the joining operation, and the ionizing gas is continuously supplied at a low speed. The blowing unit 40 is configured by connecting a Garley gas source, a valve 44, and a static eliminator μ' 2 48 in series, and has a function of blowing the ionized gas from the nozzle 48 to the surface of the second sheet. As described above, when the wafer 8 is separated by using a suitable separation jig, a fine chip or the like is generated. Or, because the 狁曰H e main 隹 day 0 piece 8 surface. The blowing portion 40 has a function of blowing away the surfaces of the two sheets 8. A dry compressed air compressor or the like can be used as the description of the valve 44 of the blow-in portion 40 of the pressurized gas source 42β I, and the pumping processing mold of the control unit 80 can be used. And the control of 86 is carried out, whereby the pressure, the pressure, and the pressure are 4 昜; "the main control ionizing gas is blown in a timely manner. The flow rate and the flow rate of the foreign matter adhering to the surface of the cymbal 8 can be sufficiently removed. : The surface of the wafer 8 itself is ordered by the expansion of the wafer 8 in order to maintain the adhesion of the crystal without being blown away. The cycle time of γ and the top of the 曰 曰 8 is very short. For example, the splicing is about seconds. Even in this short time, ^, the blowing time is about U. From the airflow source of the house milk source 42, the attached foreign matter which is attached to the wafer 8 with a strong monthly density of 8 can be sufficiently removed. 15 1335051 The static eliminator 46 has the same function as the static eliminator 34 of the static eliminator 30. , a device having a function of ionizing a blowing gas. As described above, in general, the blowing gas system uses a dry gas, but if it flows at a large flow rate, there is a problem that static electricity is generated in the wafer 8 and the collet 20, etc. Therefore, a static eliminator is used before blowing the pressurized gas. The ionizer is ionized. The static eliminator is always in an active state regardless of the point of blowing. Since the ionization of the gas itself is instantaneous, the static electricity caused by the blowing of the pressurized gas can be prevented. The gas supply path for restricting the blowing direction of the ionized gas is constituted, for example, by a tube or the like. As described above, the wafer ring 12 moves in a plane at the pickup position, but the collet 20, the upper pin 18, and the top wafer 8 are moved. Since the plane position does not change, the tip end of the nozzle 48 is disposed so as to face the surface of the wafer 8 at the pickup position. Further, the tip end of the nozzle 48 is disposed so as not to interfere with the plane movement of the wafer ring 12. It is disposed approximately 10 μm above the wafer ring 12, and the front end of the nozzle 48 can be disposed in such a manner that the plane is approximately 1 mm from the center of the plane of the upper pin 18. The blowing timing is controlled as follows: that is, the wafer ring 12 is driven to move, and then, after the wafer 8 to be picked up is positioned at the pickup position, the surface of the wafer 8 is immediately blown by the function of the blowing portion 40 for about 〇1 second. After the end of the blowing of about 0.1 second, the upper top pin 18 is driven to advance the top, and the wafer 8 for removing foreign matter or the like by blowing is directed toward the top of the collet 20 (that is, only before the top time point). As described above, the blowing portion 40 has a configuration similar to the static eliminator 30, but not 16 at the same point that the power supply H 3G supplies a low-speed ionized gas, and requires a certain amount of time to turn the wafer ring 12 and the tube. In contrast to this, the blowing unit 40 blows the foreign matter adhering to the wafer 8 and the like to the wafer 8 in a short time. In other words, the static eliminator 34| of the static eliminator has a function of generating an ionized gas for removing electricity, but the static eliminator 46 of the blowing unit 40 has a function of ionizing the gas in order to prevent static electricity from being blown by the blowing gas. The guide roller 50 is provided with a vacuum source 52 and a suction duct 54, and has a function of collecting and discharging the gas ionized by the static eliminator 30 and the gas ionized by the blowing unit 4 。. Preferably, the suction duct 54 is disposed such that the pickup position is centered on the opposite side of the nozzle 48 of the blowing portion 40 in a substantially symmetrical positional relationship. In addition to the side wall opposite to the front end of the nozzle 吹 of the blowing portion 4, a suction duct 54 is also provided at the top and bottom portions.

開口。側壁及底面部的開口可回收吹送部4〇吹送至晶圓 環丨2表面的氣體，側壁及頂部的開口可回收藉由除電 而離子化之氣體。 使用圖3所示之流程圖來說明上述構成之接合裝置1〇 之作用，特別是控制部80之各功能。圖3之流程圖係表 示接合裝置10之拾取處理之各處理步驟之流程。將電源 輸入接合裝置10，進行初始化後，藉由控制部8〇的除電 作動處理模組82之功能開始除電器3〇之作動（sl〇)。 在進行具體的接合作業前首先進行此作動。具體的接合作 業係下述S12到S20。其原因在於：除電器3〇係藉由離子 化氣體將晶圓環12上完成晶片切割的晶圓、及筒夾2〇等 17 1335051 除電者，但如上述，除電需要時間。當接合裝置輪入 電源時，持續進行除電器30之作動。據此，持續對接人 裝置10之各元件，特別是晶圓環12、筒夾2〇等供應離^ 化氣體，將此等恆維持在可充分除電的狀態。又，藉由導 管部50吸引離子化氣體，故伴隨除電將因為靜電而附著 於晶圓環12、筒夾20等的異物剝離，藉由導管部5〇與離 子化氣體一起排放至外部。導管部5〇的啟動，可與除電 器30之啟動同時，亦可稍慢一些，但必須在進行具體的 鲁接合作業前啟動。 從除電器30的作動開始，經過除電所需之充分的時 間，例如數秒後，開始具體的接合處理。在此，首先藉由 定位處理模組84的功能，將晶片8定位於拾取位置（si2)。 即，對筒夾致動器74下達指令，使筒夾2G移動到拾取位 置如上述，拾取位置係上頂銷18的位置，據此，筒夾2〇 移動到與上頂銷丨8上方相對向之位置。接著，對晶圓環 致動器7G下達指令，驅動晶圓環12移動，使應拾取的晶 片8到達拾取位置。據此，將應拾取的晶片8定位於筒夾 20下方、上頂銷18上方。 定位後，藉由吹送處理模組86之功能，對吹送部4〇 之閥44下達指令，上述之例中，於大約〇丨秒之間，將離 子化氣體吹送至晶片8表面（S14)。上述之例中，離子 化氣體的壓力為數atm。據此，晶片8在藉由擴張膜14的 黏著性而穩固保持之狀態下，可吹走附著於其上之異物 等，並藉由導管部50與離子化氣體一起排放至外部。此 18 1335051 外，藉由除電器30的作用將晶圓環Μ 除電，故吹走的異物等不會再·欠 3 〇等充刀 不會再一人附者於晶圓環12上完成 曰曰片切割的晶圓、筒夹20等，而由導管部5〇所吸引。 处^暫時間的吹送後，接著，藉由上頂處理模組㈡的功 H 頂致動a下達指令，進行上頂晶片8(S16)。 據此，晶片8容易從擴張膜14 ^ ^ 工剌離。接者，藉由拾取 處理桓組90的功能，對筒夹致動器％與吸引部⑼下達Opening. The openings in the side walls and the bottom portion recover the gas blown to the surface of the wafer ring 2 by the blowing portion 4, and the openings in the side walls and the top portion recover the gas ionized by the electricity. The function of the bonding apparatus 1B configured as described above, in particular, the functions of the control unit 80, will be described using the flowchart shown in FIG. The flowchart of Fig. 3 shows the flow of each processing procedure of the pickup processing of the bonding apparatus 10. After the power is input to the bonding apparatus 10 and initialized, the operation of the power-removing processing module 82 of the control unit 8 starts the operation of the static eliminator 3 (s1). This is done first before performing a specific joining operation. The specific cooperation is the following S12 to S20. The reason for this is that the static eliminator 3 is a wafer that is subjected to wafer dicing on the wafer ring 12 by ionizing gas, and a 13 1335051 eliminator, but as described above, it takes time to remove electricity. When the engaging device is turned on, the operation of the neutralizer 30 is continued. Accordingly, the components of the docking device 10 are continuously supplied, in particular, the wafer ring 12, the collet 2, and the like are supplied with the chemical gas, and the constant is maintained in a state where the power can be sufficiently removed. Further, since the ionized gas is sucked by the duct portion 50, the foreign matter adhering to the wafer ring 12 or the collet 20 due to static electricity is peeled off by the static electricity, and is discharged to the outside together with the ionized gas by the duct portion 5〇. The activation of the conduit portion 5 can be initiated at the same time as the activation of the deaerator 30, but must be initiated prior to the specific splicing operation. From the start of the operation of the static eliminator 30, after a sufficient time required for the static elimination, for example, a few seconds, a specific bonding process is started. Here, first, the wafer 8 is positioned at the pickup position (si2) by the function of the positioning processing module 84. That is, an instruction is issued to the collet actuator 74 to move the collet 2G to the pick-up position as described above, and the pick-up position is the position of the top pin 18, whereby the collet 2 is moved to oppose the upper top pin 8 Towards the location. Next, an instruction is issued to the wafer ring actuator 7G to drive the wafer ring 12 to move so that the wafer 8 to be picked up reaches the pickup position. Accordingly, the wafer 8 to be picked up is positioned below the collet 20 and above the upper top pin 18. After the positioning, the valve 44 of the blowing unit 4 is commanded by the function of the blowing processing module 86. In the above example, the ionized gas is blown to the surface of the wafer 8 in about ten seconds (S14). In the above example, the pressure of the ionized gas is several atm. According to this, in the state in which the wafer 8 is stably held by the adhesiveness of the expanded film 14, foreign matter or the like adhering thereto can be blown off and discharged to the outside together with the ionized gas by the conduit portion 50. In addition to the 18 1335051, the wafer ring is de-energized by the action of the neutralizer 30, so that the foreign matter blown away, etc. will not be owed again, and the filling knife will not be attached to the wafer ring 12 by one person. The wafer to be cut, the collet 20, and the like are attracted by the duct portion 5A. After the blowing of the temporary time, the upper top wafer 8 is then carried out by the command of the upper top processing module (2) to actuate a, and the upper top wafer 8 is performed (S16). Accordingly, the wafer 8 is easily separated from the expanded film. Receiver, by picking up the function of the processing group 90, releasing the collet actuator % and the attraction portion (9)

:曰二…0在拾取位置下降，將上頂、容易剝離的晶 14 Λ面整體吸引保持’並再次上昇，將晶片8從擴張膜 ^離並拾取（S18)。接著，將晶片8搬送到接合位 置 進行晶粒接合（S20)。 β接著，判斷位於晶㈣12上之應進行接合的所有晶片 8是否已完成接合（S22)，當判斷尚未完成時，回到si2 , 進行下-個晶片8之S12至S20的處理。當判斷所有晶片 8的處理完成時，除電H 30會停止作動（S24)。導管部 5〇的作動亦會同時停止。 如上述，在持續進行除電的狀態下，僅在將晶片上頂 並拾取之前，以短時間、較強氣流之方式對晶片吹送離子 化氣體，藉此，相較於習知，能更有效將附著於晶片之異 物等除去，防止其再次附著於筒夾等。據此，可防止進行 拾取時異物等位於晶片及平面筒夾之間防止剛性較低、 容易撓曲的晶片等產生損傷。 (實施例2 ) 上述中，分開設置吹送部與筒夾，但利用筒夾的吸引 19 丄 丄 孔’能在吸引保持晶片前從筒失前端對晶片吹送離子化氣 體。圖4係表示將開口於平面筒夾之平坦面上的孔分為吸 引用’、人送用的接合接^ 1〇〇之構成圖。與圖&quot;目同的元 件附加相同符號，以省略詳細說明。 〃圖4中，與圖！的接合裝置1〇之構成的不同點在於： 筒夾及吹送部’此接合裝置1〇&quot;，筒夾2〇之貫通孔22 不僅用以吸引晶片8’亦用以對晶片8表面吹送離子化氣 體。 再者，用以吸引保持晶片8的真空源62及閥64的吸 引系列線、及用以對晶片8吹送離子化氣體的加壓氣體源 42、閥44、及靜電消除器46的吹送系列線，皆連接於切 換部66，構成吸引吹送部26。由控制部8〇控制吸引吹送 部26的2條系列線連接於吸引孔的時點。 如圖2之說明，貫通孔22係開口於筒夾底面的平坦面 中央的孔。貫通孔22連接於吸引吹送部26的切換部66。 切換部66具有選擇將吸引系列線或吹送系列線連接於貫 通孔22、或使二者皆不連接而成為敞開端，即敞開於大氣 壓的功能。 使用圖3說明切換部66的選擇。在si〇的除電器作 動步驟中’貫通孔22會敞開於大氣壓。當進行si】的定 位步驟時，貫通孔22亦會敞開於大氣壓。 於S14的吹送步驟中’貫通孔22連接於吹送系列線。 即，加壓氣體源42、閥44、靜電消除器46的系列線連接 於貫通孔22,如圖3之說明’藉由控制部8〇的吹送處理 20 1335051 模組86之功能控制閥44，較強氣流的離子化氣體在短期 間内通過筒夾2G的貫通孔22，吹送至晶片8表面。上述 之例中’短期間係0.1秒，較強氣流係加壓氣體源42的壓 力為數atm。在吹送步驟後的S16之上頂步驟中，貫通孔 22會敞開於大氣壓。 於S18的拾取步驟中’貫通孔22連接於吸引系列線。 即，真空源62、閥64的系列線連接於貫通孔22,如圖3 =說明，藉由控制部80的拾取處理模組9〇之功能，通過 筒夾20的貫通孔22吸引保持晶片8。在s2〇的接合步驟 中:當搬送晶片8及進行晶粒接合時，貫通孔22會與吸 引系列線連接’接合結束後，貫通孔22會敞開於大氣麗。 如上述，將對筒夹之貫通孔之連接在大氣壓、吹送系 列線、吸引系列線之間做切換n，吹送步驟與吸引步 驟不會重複〇因此，當進行吹送較強之離子化氣體時，不 會進订上頂與吸引，不會因進行吹送而吹走晶片。又，由 於透過筒夾的貫通孔從晶片上方進行吹送，故可進一步高 效率除去筒夾下方的異物等。據此，可進一步有效防止異 物位於平面筒夾的平坦面及晶片表面之間。又，不需要設 置用以吹送的特別噴嘴。 【圖式簡單說明】 圖1係表示本發明之實施形態之接合裝置之拾取處理 所必要部分之構成。 圖2係本發明之實施形態之接合裝置所使用之平面筒 夾之仰視圖。 21 1335051 圖3係表示本發明之實施形態之接合裝置之拾取處理 之各處理步驟之流程圖。 圖4係表示其他實施形態之接合裝置之構成圖。 【主要元件符號說明】曰2...0 is lowered at the pickup position, and the upper and the easily peeled crystals are sucked and held as a whole, and rise again, and the wafer 8 is separated from the expanded film and picked up (S18). Next, the wafer 8 is transferred to the bonding position to perform die bonding (S20). Then, it is judged whether or not all the wafers 8 to be bonded on the crystal (four) 12 have been joined (S22), and when the judgment is not completed, the processing returns to si2, and the processing of S12 to S20 of the next wafer 8 is performed. When it is judged that the processing of all the wafers 8 is completed, the neutralization H 30 stops the operation (S24). The actuation of the catheter section 5 will also stop at the same time. As described above, in the state where the static elimination is continued, the ionized gas is blown to the wafer in a short time and a strong gas flow only before the wafer is topped and picked up, whereby the wafer can be more effectively compared than conventionally. Foreign matter adhering to the wafer or the like is removed to prevent it from adhering again to the collet or the like. According to this, it is possible to prevent damage such as foreign matter or the like which is located between the wafer and the flat collet during the pick-up, and which prevents the rigidity from being low and easily deflected. (Embodiment 2) In the above, the blowing portion and the collet are separately provided, but the ionizing gas can be blown from the leading end of the cylinder before the suction and holding of the wafer by the suction of the collet. Fig. 4 is a view showing a configuration in which a hole which is opened on a flat surface of a flat collet is divided into a suction reference and a joint for use by a person. The same symbols are attached to the same elements as in the drawings, and the detailed description is omitted. 〃 Figure 4, and the figure! The difference between the configuration of the bonding device 1 is: the collet and the blowing portion 'the bonding device 1', the through hole 22 of the collet 2 is not only used to attract the wafer 8' but also to blow ions to the surface of the wafer 8. Gas. Further, a series of suction lines for sucking the vacuum source 62 and the valve 64 for holding the wafer 8, and a blowing gas source 42 for blowing the ionized gas to the wafer 8, the valve 44, and the static discharger 46 are blown up. Both of them are connected to the switching unit 66 to constitute the suction blowing unit 26. The control unit 8 controls the timing at which the two series of lines of the suction blowing unit 26 are connected to the suction holes. As illustrated in Fig. 2, the through hole 22 is a hole that is opened in the center of the flat surface of the bottom surface of the collet. The through hole 22 is connected to the switching portion 66 of the suction blowing portion 26 . The switching portion 66 has a function of selectively connecting the suction line or the blowing series line to the through hole 22, or both of them to be open, that is, to open to the atmospheric pressure. The selection of the switching unit 66 will be described using FIG. In the discharge operation of the si〇, the through hole 22 is opened to atmospheric pressure. When the positioning step of si is performed, the through hole 22 is also opened to atmospheric pressure. In the blowing step of S14, the through hole 22 is connected to the blowing line. That is, the series of lines of the pressurized gas source 42, the valve 44, and the static eliminator 46 are connected to the through hole 22, as illustrated in FIG. 3, 'the function control valve 44 of the module 86 is blown by the control unit 8〇, 13 1335051, The ionized gas having a stronger gas flow is blown to the surface of the wafer 8 through the through holes 22 of the collet 2G in a short period of time. In the above example, the short period is 0.1 second, and the pressure of the stronger gas flow pressurized gas source 42 is several atm. In the top step of S16 after the blowing step, the through hole 22 is opened to atmospheric pressure. In the pickup step of S18, the through hole 22 is connected to the suction line. That is, the series of lines of the vacuum source 62 and the valve 64 are connected to the through hole 22, and as shown in FIG. 3, the wafer 8 is sucked and held by the through hole 22 of the collet 20 by the function of the pickup processing module 9 of the control unit 80. . In the bonding step of s2〇, when the wafer 8 is transferred and the die bonding is performed, the through hole 22 is connected to the suction series line. After the bonding is completed, the through hole 22 is opened to the atmosphere. As described above, the connection of the through-holes of the collet is switched between the atmospheric pressure, the blowing series line, and the suction line, and the blowing step and the suction step are not repeated. Therefore, when a stronger ionized gas is blown, The top and the attraction will not be ordered, and the wafer will not be blown away by blowing. Further, since the through hole penetrating through the collet is blown from the upper side of the wafer, foreign matter or the like under the collet can be removed more efficiently. According to this, it is possible to further effectively prevent the foreign matter from being located between the flat surface of the flat collet and the surface of the wafer. Further, it is not necessary to provide a special nozzle for blowing. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing a configuration of a necessary portion of a picking process of a joining device according to an embodiment of the present invention. Fig. 2 is a bottom plan view showing a flat collet used in the joining device of the embodiment of the present invention. 21 1335051 Fig. 3 is a flow chart showing the respective processing steps of the pickup processing of the bonding apparatus according to the embodiment of the present invention. Fig. 4 is a view showing the configuration of a joining device according to another embodiment. [Main component symbol description]

8 晶 片 10、 100 接合裝置 12 晶 圓環 14 擴 張膜 16 上 頂台 18 上 頂銷 20 筒 夾 22 貫 通孔 24 槽 26 吸 引吹送部 30 除 電器 32、 42 加壓氣體源 34、 46 靜電消除器 36、 48 喷嘴 40 吹 送部 44、 64 閥 50 導 管部 52 ' 62 真空源 54 吸 引導管 60 吸 引部 22 1335051 66 切換部 70 晶圓壞致動Is 72 上頂致動器 74 筒夾致動器 80 控制部 82 除電作動處理模組 84 定位處理模組 86 吹送處理模組 88 上頂處理模組 90 拾取處理模組 238 wafer 10, 100 bonding device 12 wafer ring 14 expansion film 16 upper table 18 upper pin 20 collet 22 through hole 24 slot 26 suction blowing portion 30 neutralizer 32, 42 pressurized gas source 34, 46 static eliminator 36, 48 Nozzle 40 Blowing portion 44, 64 Valve 50 Catheter portion 52' 62 Vacuum source 54 Suction conduit 60 Suction portion 22 1335051 66 Switching portion 70 Wafer bad actuation Is 72 Upper top actuator 74 Collet actuator 80 Control unit 82 de-energizing processing module 84 positioning processing module 86 blowing processing module 88 top processing module 90 picking processing module 23

Claims (1)

十、申請專利範圍： L一種接合裝置，其特徵在於，係具備· 切 割之：：環，係贴合於擴張媒上’用以保持已完成晶片 上之任意晶片上頂 上頂台，具有在既定時點將晶圓環 之頂銷； 平面筒夾，係、用以吸引保持並搬送藉由上頂銷上頂的 晶片’與晶片相對向之面為平坦； _ 除電器，用以對晶圓環卜6占曰Η „ ^ 7日日圓碾上凡成日日片切割之晶圓與平面 筒夾之周圍供應離子化氣體；以及 吹送機構，係、配置在平面筒夾附近，僅在上項時點前， 對上頂的任意晶片吹送離子化氣體。 2.—種接合裝置，其特徵在於，係具備： 晶圓環，係貼合於擴張膜上，用以保持已完成晶片切 割之晶圓； 上頂台，具有在既定時點將晶圓環上之任意晶片上頂 • 之上頂銷； 平面筒夾，係用以吸引保持並搬送藉由上頂銷上頂的 晶片，與晶片相對向之面為平坦； 除電器’用以對晶圓環上完成晶片切割之晶圓與平面 筒夹之周圍供應離子化氣體；以及 吹送機構，係連接於平面筒夾，僅在上頂時點前，對 上頂的任意晶片吹送離子化氣體； 平面筒夾具有開口於平坦面之孔，通過此孔可在吸引 24 1335051 晶片之減壓吸引與對晶片吹送離子化氣體之間做切換。 3.如申請專利範圍第1或2項之接合裝置，其中，具 備設置於平面筒失附近之導管，其用以吸引藉由吹送機構 及除電器而離子化之氣體。 4· 一種接合方法，係使用下述元件進行接合： 晶圓環，係貼合於擴張膜上，用以保持已完成晶片切 割之晶圓； 上頂台’具有在既定時點將晶圓環上之任意晶片上頂 之上頂銷；以及 平面筒夾，係用以吸引保持並搬送藉由上頂銷上頂的 晶片’與晶片相對向之面為平坦； 其特徵在於包含： 作動步驟，在進行接合前使除電器（用以對晶圓環上 疋成日日片切割之晶圓與平面筒夾之周圍供應離子化氣體） 作動； 吹送步驟，係對位於平面筒夾拾取位置之任意晶片附 近吹送離子化氣體； &quot;上頂步驟，係在離子化氣體之吹送結束後，將該晶片 從擴張膜朝向平面筒夾之平坦面上頂；以及 拾取步驟，係藉由平面筒央拾取該晶片。 十一、囷式： 如次頁 25X. Patent application scope: L A bonding device characterized in that: a cutting: a ring is attached to the expanding medium to hold the top table on any wafer on the completed wafer, and has a predetermined At the time, the wafer ring is pinned; the flat collet is used to attract and carry the wafer on the top of the upper pin to be flat with respect to the wafer; _discharger for the wafer ring卜6占曰Η „ ^ On the 7th, the Japanese yen is filled with the ionized gas around the wafer and the flat collet; and the blowing mechanism is arranged near the flat collet, only at the time of the above item. Before, the ionizing gas is blown to any of the upper wafers. 2. The bonding device is characterized in that: the wafer ring is attached to the expansion film to hold the wafer that has completed the wafer cutting; The top stage has a top/upper top pin on any wafer on the wafer ring at a timed point; the flat collet is used to attract and transport the wafer on top of the top pin, opposite to the wafer The surface is flat; The electrical appliance is used to supply ionized gas around the wafer-cut wafer and the planar collet on the wafer ring; and the blowing mechanism is connected to the planar collet, only before the top time point, any wafer on the top top The ionized gas is blown; the flat collet has a hole that is open to the flat surface, and the hole can be switched between attracting the suction of the 13 1335051 wafer and blowing the ionized gas to the wafer. 3. As claimed in the first or A joining device of the second aspect, comprising: a duct disposed in the vicinity of the flat cylinder for attracting a gas ionized by the blowing mechanism and the static eliminator. 4. A bonding method using the following components for bonding: a ring that is attached to the expanded film to hold the wafer that has been wafer-cut; the upper table 'has a top pin on any wafer on the wafer ring at a predetermined point in time; and a flat collet, The wafer for attracting and transporting the top of the top pin is flat with respect to the wafer; the method comprises: an actuating step of removing electricity before bonding (for supplying ionized gas around the wafer ring and the planar collet on the wafer ring); the blowing step is to blow the ionized gas near any wafer located at the pick-up position of the flat collet; &quot; the top step is to pick up the wafer from the expanded film toward the flat surface of the flat collet after the end of the ionizing gas is blown; and the picking step is to pick up the wafer by the flat tube. Type: as the next page 25