TWI333678B - - Google Patents

Download PDF

Info

Publication number
TWI333678B
TWI333678B TW95143273A TW95143273A TWI333678B TW I333678 B TWI333678 B TW I333678B TW 95143273 A TW95143273 A TW 95143273A TW 95143273 A TW95143273 A TW 95143273A TW I333678 B TWI333678 B TW I333678B
Authority
TW
Taiwan
Prior art keywords
defect
substrate
edge portion
wafer
defect inspection
Prior art date
Application number
TW95143273A
Other languages
Chinese (zh)
Other versions
TW200733285A (en
Inventor
Masatsugu Okuyama
Hiroshi Kondo
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of TW200733285A publication Critical patent/TW200733285A/en
Application granted granted Critical
Publication of TWI333678B publication Critical patent/TWI333678B/zh

Links

Landscapes

  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)

Description

1333678 九、發明說明: 【發明所屬之技術領域】 本發明係關於對半導體等基板·之缺陷進行檢查之技術, 尤其係關於對基板邊緣部之缺陷進行檢查之缺陷檢查裝置 及缺陷檢查方法。 【先前技術】 先前,作為對產生於半導體晶圓等基板之邊緣部之缺陷 進行檢查的裝置,存在有如下裝置,該裝置具備:旋轉 台,其吸附保持晶圓之中央部;以及攝像裝置,其拍攝保 持於旋轉台之晶圓邊緣部的圖像(例如,參照專利文獻”。 以此種方式支持基板之中央部,係為檢查基板邊緣部之正 反兩面之缺陷。 [專利文獻1]日本特表W0 03/028089號公報(圖6) [發明所欲解決之問題] 然而,於欲以尚解析度圖像詳細檢查存在於邊緣部之缺 陷時’必須使攝像裝置極其接近基板邊緣附近,例如直至 100〜300 μπι左右之距離。此時,如專利文獻〗所揭示,於 保持基板之中央部之構造中,無法維持基板之形狀及姿 勢,故當使基板旋轉時,於基板之邊緣部至少產生上下方 向之晃動,因此有可能導致物鏡與基板邊緣接觸。又,若 邊緣部產生晃動,則攝像裝置之焦點亦晃動,故存在例如 操作者無法直接確認缺陷圖像之問題。 鑒於以上情形’本發明之目的在於提供可確實地對基板 邊緣部之缺陷進行檢測之缺陷檢查裝置及缺陷檢查方法。 115801.doc -6 · 1333678 【發明内容】 為達成上述目的,本發明之缺陷檢查裝置具備:支持機 構’其自基板之背面側支持該基板之邊緣部;檢測機器, 其檢測產生於由上述支持機構所支持之上述基板表面側之 上述邊緣部的缺陷;以及移動機構,其使由上述支持機構 所支持之上述基板與上述檢測機器相對性地移動。 本發明係利用移動機構而使基板與檢測機器相對性地移 Φ 動’藉此檢測缺陷。此時,由於藉由支持機構而支持基板 背面之邊緣部,故可抑制邊緣部之晃動,並可確實地檢測 邊緣部之缺陷。 於本發明中,上述檢測機器為攝像機器。使用攝像機器 可獲得人類憑視覺可認識之詳細之缺陷資訊。 於本發明中,上述移動機構具有χγ移動機構,該χγ移 動機構使由上述支持機構所支持之上述基板在平行於該基 板之上述表面之面内,於第丨方向上及與該第1方向正交之 • 第2方向上移動。於本發明之情形,上述支持機構為具有 ΧΥ移動機構之平臺。即,本發明藉由先前已存在之又丫平 臺來移動基板,無須設置支持基板邊緣部之新機構。 於本發明中,上述ΧΥ移動機構具有内插機構該内插 機構以對上述面内之座標之複數個點間進行内插之方式移 動上述基板。2點間之内插,較理想的是例如以直線狀或 者曲線狀進行内插。藉此,例如當基板之邊緣部為曲線狀 時’可於基板上沿其曲線狀平滑地移動,缺陷之檢測率提 高,並且檢測動作可謀求高速化。 115801.doc 1333678 於本發明中,缺陷檢杳I晉推 存記載有上… 備:儲存機構,其儲 訊ϋΛ嬙媸^ 座钛貝訊之缺陷列表,·座標資 。追力機構,其將不同於上述第W標資訊之座標資訊, 即相當於上述邊緣部第 ” * 訊追加至上述所儲存之[Technical Field] The present invention relates to a technique for inspecting a defect of a substrate such as a semiconductor, and more particularly to a defect inspection device and a defect inspection method for inspecting a defect at an edge portion of a substrate. [Prior Art] As a device for inspecting a defect generated at an edge portion of a substrate such as a semiconductor wafer, there is a device including a rotating table that adsorbs and holds a central portion of the wafer, and an imaging device. The image is held by the edge portion of the wafer of the turntable (for example, refer to the patent document). The central portion of the substrate is supported in such a manner as to check the defects on both the front and back sides of the edge portion of the substrate. [Patent Document 1] Japanese Patent Publication No. WO 03/028089 (Fig. 6) [Problems to be Solved by the Invention] However, when it is desired to inspect the defects existing at the edge portion in detail with the resolution image, it is necessary to make the image pickup device extremely close to the edge of the substrate. For example, the distance is up to about 100 to 300 μπι. At this time, as disclosed in the patent document, the shape and posture of the substrate cannot be maintained in the structure of the central portion of the substrate, so when the substrate is rotated, at the edge of the substrate At least the sway of the up-and-down direction occurs, so that the objective lens may be in contact with the edge of the substrate. Further, if the edge portion is shaken, the image pickup device Since the point is also shaken, there is a problem that the operator cannot directly confirm the defective image. In view of the above, the object of the present invention is to provide a defect inspection device and a defect inspection method capable of reliably detecting defects at the edge portion of the substrate. Doc -6 · 1333678 SUMMARY OF THE INVENTION In order to achieve the above object, a defect inspection apparatus according to the present invention includes: a support mechanism that supports an edge portion of the substrate from a back side of a substrate; and a detection device that is detected by the support mechanism Supporting the defect of the edge portion on the substrate surface side; and a moving mechanism for relatively moving the substrate supported by the support mechanism and the detecting device. The present invention uses the moving mechanism to make the substrate and the detecting device The defect is detected by detecting the defect. At this time, since the edge portion of the back surface of the substrate is supported by the support mechanism, the sway of the edge portion can be suppressed, and the defect of the edge portion can be surely detected. In the present invention, The above detection machine is a camera. The use of the camera can obtain human visual recognition. In the present invention, the moving mechanism has a χγ moving mechanism that causes the substrate supported by the support mechanism to be in a direction parallel to the surface of the substrate in the second direction And moving in the second direction orthogonal to the first direction. In the case of the present invention, the support mechanism is a platform having a ΧΥ moving mechanism. That is, the present invention moves the substrate by a previously existing platform. There is no need to provide a new mechanism for supporting the edge portion of the substrate. In the present invention, the ΧΥ moving mechanism has an interpolation mechanism that moves the substrate by interpolating a plurality of points in the in-plane coordinates. Interpolation between the two is preferably carried out, for example, in a linear or curved manner, whereby, for example, when the edge portion of the substrate is curved, it can smoothly move along the curved shape on the substrate, and the detection rate of the defect It is improved, and the detection operation can be speeded up. 115801.doc 1333678 In the present invention, the defect inspection I promoted the record... The preparation: the storage organization, the storage information, the titanium defect, the list of defects, the coordinates. The chasing agency, which will be different from the coordinate information of the above-mentioned W-mark information, is equivalent to the above-mentioned marginal section.

^列表’以及控制機構’其以如下方式進行控制:使用 边檢測機器檢測與上述所追加之第2座標資訊相對應之 生於上述邊緣部的缺陷。所謂第W標資訊,主要是基 板表面上之形成有電路元件之經製品化之區域的座標二 訊與此相同,將邊緣部之座標資訊追加至缺陷列表中作 為第2座標資訊’藉此可作成較先前更詳細之缺陷列表。 本發明於第2座標資訊中,既可追加特別容易產生缺陷之 座標,亦可追加遍佈邊緣部全周之座標資訊。 於本發明中’缺陷檢查裝置進而具備缺陷資訊追加機 構其將與由上述檢測機構所檢測出之缺陷有關之缺陷資 訊追加至上述缺陷列表。「缺陷資訊j係例如缺陷之種 類尺寸等。然而,並不侷限於此,例如於將攝像機器用 作檢測機器時’亦包含缺陷之圖像資訊。 於本發明中’上述基板係直徑為12英吋之半導體基板。 本發明尤其有利於直徑為12英吋,即直徑約為3〇〇 mm之半 導體基板。即,對先前之裝置而言,如12英吋般,基板越 大型化,邊緣部之晃動量或彎曲量越大,故難以使攝像機 器接近邊緣部。 本發明之缺陷檢查方法具備:自基板之背面側支持該基 板之邊緣部之步驟;使上述被支持之上述基板之上述邊緣 115801.doc 1333678 部與檢測缺陷之檢測機器相對性地接近之步驟;以及一面 使上述邊緣部與上述檢測機器相對性地移動,一面檢測產 生於上述基板表面側之上述邊緣部之缺陷之步驟。 本發明中’由於支持基板背面之邊緣部,故於檢測缺陷 時’可抑制邊緣部之晃動。 [發明之效果] 如上所述’本發明可確實地對基板邊緣部之缺陷進行檢 _ 測。又,可高效地檢測缺陷,並對其分類。 【實施方式】 以下’ 一面參照圖式’一面對本發明之實施形態加以說 明。 圖1係表示本發明之一實施形態之缺陷檢查裝置的模式 性平面圖。 缺陷檢查裝置10具備收納半導體晶圓基板1(以下僅稱為 晶圓)之晶匣2、預對準器3、XY移動機構5、搬運機器人4 • 以及攝像機器U(參照圖2)。搬運機器人4在晶匣2、預對準 盗3以及χγ移動機構5之間搬運晶圓i。預對準器3對自搬 運機器人4搬運來之晶圓1之平面内的旋轉角度進行粗調整 (預先對準)。 缺陷檢查裝置1〇處理例如8英吋、12英吋之晶圓丨,但亦 可處理大小為上述尺寸以外之晶圓1。晶E 2既可為開放 式,亦可為密閉式。又,在圖1所示之例中,設置有兩個 晶{y_ ^ 9 -Υθ git "rtl* . -了為一個,亦可為三個以上。亦可設置複數 個搬運機器人4及預對準器3。 115801.doc -9- 1333678 圖2係表示χγ移動機構5及作為檢測缺陷之機器之攝像 機器11的模式性立體圖。ΧΥ移動機構5具有:支持部(支持 機構)12 ’其支持晶圓丨;Χ轴移動機構14,其使上述支持 部12於X軸方向上移動;以及γ軸移動機構15,其使支持 412及X轴移動機構14在與X柏正交之γ軸方向上移動。 支持部12具有支持晶圓1之背面1 b之整個表面的圓板狀 支持台13,例如藉由真空夾盤而保持晶圓1。由於使用有 真空夾盤機構,故可確保晶圓1之表面la(或者背面lb)在垂 直方向上之兩位置精度。較理想的是,支持台之支持晶 圓1之支持面的平面度極高’例如為1 μιη左右。然而,不 應侷限於1 μηι。再者,夾盤方法亦可為機械夾盤,而不侷 限於真空夾盤,此時,較理想為至少支持晶圓i之邊緣部 1C之構造。又,支持部12有時亦具有使支持台13旋轉之機 構。 X軸移動機構14 ’例如於圖2中,具有沿導軌21移動之移 動體16,該導軌21於X軸方向上延伸,移動體16相對性地 固定於支持部12。Y軸移動機構15具有沿導軌22移動之移 動體17,該導執22於Y轴方向上延伸,移動體17相對性地 固定於導轨21。X轴移動機構14及γ軸移動機構15由未圖 示之皮帶驅動機構、滾珠螺桿驅動機構、電磁線性馬達驅 動機構、或者除該等驅動機構以外之驅動機構而實現。 攝像機器11係觀察產生於由支持部丨2支持之晶圓丨之邊 緣部lc之缺陷的機器,且配置於支持台13之上部。攝像機 器11例如具有用以獲得放大圖像之光學部(例如含有物鏡 11580l.doc .10· 1333678 之透鏡系統)8,以及拍攝經光學部8放大之圖像之攝像元The ^list' and the control means' are controlled such that the edge detecting means detects the defect generated in the edge portion corresponding to the added second coordinate information. The W mark information is mainly the same as the coordinate information of the productized area on the surface of the substrate on which the circuit component is formed, and the coordinate information of the edge portion is added to the defect list as the second coordinate information. Make a list of defects that are more detailed than before. In the second coordinate information of the present invention, it is possible to add a coordinate that is particularly likely to cause a defect, and to add coordinate information spread over the entire circumference of the edge portion. In the present invention, the defect inspection apparatus further includes a defect information adding means for adding the defect information relating to the defect detected by the detecting means to the defect list. "The defect information j is, for example, the type of the defect, etc. However, it is not limited thereto, for example, when the camera is used as a detecting device," the image information of the defect is also included. In the present invention, the above substrate system has a diameter of 12 inches. The present invention is particularly advantageous for a semiconductor substrate having a diameter of 12 inches, that is, a diameter of about 3 mm. That is, for a conventional device, such as 12 inches, the larger the substrate, the edge portion The larger the amount of shaking or the amount of bending, the more difficult it is to bring the camera closer to the edge portion. The defect inspection method of the present invention includes the step of supporting the edge portion of the substrate from the back side of the substrate; and the edge of the substrate to be supported 115801.doc 1333678 a step of relatively close to a detecting device for detecting a defect; and a step of detecting a defect generated at the edge portion on the surface side of the substrate while moving the edge portion relative to the detecting device. In the present invention, "because the edge portion of the back surface of the substrate is supported, when the defect is detected", the sway of the edge portion can be suppressed. As described above, the present invention can reliably detect defects of the edge portion of the substrate. Further, the defects can be efficiently detected and classified. [Embodiment] The following is a description of the present invention with reference to the drawings. Fig. 1 is a schematic plan view showing a defect inspection device according to an embodiment of the present invention. The defect inspection device 10 includes a wafer 2 for storing a semiconductor wafer substrate 1 (hereinafter simply referred to as a wafer) The aligner 3, the XY moving mechanism 5, the transport robot 4, and the camera U (see Fig. 2). The transport robot 4 transports the wafer i between the wafer 2, the pre-aligned stealer 3, and the χγ moving mechanism 5. The aligner 3 coarsely adjusts (pre-aligns) the rotation angle in the plane of the wafer 1 transported by the transfer robot 4. The defect inspection apparatus 1 processes, for example, a 8 inch, 12 inch wafer crucible, but The wafer 1 having a size other than the above size can also be processed. The crystal E 2 can be either an open type or a closed type. Further, in the example shown in Fig. 1, two crystals {y_^9-Υθ are provided. Git "rtl* . - one for one, or more than three A plurality of transport robots 4 and pre-aligners 3 may be provided. 115801.doc -9- 1333678 FIG. 2 is a schematic perspective view showing the χγ moving mechanism 5 and the camera 11 as a machine for detecting defects. Having a support portion (supporting mechanism) 12' that supports a wafer cassette; a spindle moving mechanism 14 that moves the support portion 12 in the X-axis direction; and a γ-axis moving mechanism 15 that moves the support 412 and the X-axis The mechanism 14 moves in the γ-axis direction orthogonal to X-Bai. The support portion 12 has a disk-shaped support table 13 that supports the entire surface of the back surface 1b of the wafer 1, and holds the wafer 1 by, for example, a vacuum chuck. Since the vacuum chuck mechanism is used, the accuracy of the positional la (or the back lb) of the wafer 1 in the vertical direction can be ensured. Preferably, the support surface of the support wafer 1 has a very high flatness, for example, about 1 μηη. However, it should not be limited to 1 μηι. Further, the chucking method may be a mechanical chuck, and is not limited to a vacuum chuck. In this case, it is preferable to support at least the configuration of the edge portion 1C of the wafer i. Further, the support portion 12 may have a mechanism for rotating the support table 13. The X-axis moving mechanism 14' has, for example, a moving body 16 that moves along the guide rail 21 in Fig. 2, and the guide rail 21 extends in the X-axis direction, and the movable body 16 is relatively fixed to the support portion 12. The Y-axis moving mechanism 15 has a moving body 17 that moves along the guide rail 22, and the guide 22 extends in the Y-axis direction, and the moving body 17 is relatively fixed to the guide rail 21. The X-axis moving mechanism 14 and the γ-axis moving mechanism 15 are realized by a belt driving mechanism, a ball screw driving mechanism, an electromagnetic linear motor driving mechanism, or a driving mechanism other than the driving mechanisms, which are not shown. The camera 11 observes a defect generated in the edge portion lc of the wafer cassette supported by the support portion 2, and is disposed on the upper portion of the support table 13. The camera 11 has, for example, an optical portion for obtaining an enlarged image (for example, a lens system including an objective lens 11580l.doc.10·1333678) 8, and an imaging element for capturing an image enlarged by the optical portion 8.

件9等。攝像元件9使用有例如CCD (Charge Coupled Device ’ 電何叙合元件)或 CMOS (Complementary Metal-Oxide Semiconductor,互補金氧半導體)等元件’但亦可 為此等以外之方式。光學部8可藉由未圖示之升降機構而 升降’且例如構成為使之接近晶圓1之表面丨a側之邊緣部 lc,或離開邊緣部lee不僅可設置升降機構,進而可設置 如下機構,該機構使光學部8在水平面内(χ_γ平面内)移 動又,有時將升降機構設置於支持部12,以使晶圓上下 升降。藉由攝像機器;!!而獲得之圖像被傳送至未圖示之監 視器’操作者可觀察該圖像。 現對以上述方式構成之缺陷檢查裝置1〇之動作加以說 明。圖3係表示該動作之流程圖。 控制缺陷檢查裝置10之動作之系統控制器,例如,最初 輸入自未圖示之其他檢查裝置(或者與其連接之電腦)或者 局階飼服H電腦等傳送來之缺陷列表(步㈣U。缺陷列表 係電子化檔案,於該缺陷列表中記載有與由其他檢查裝置 所記載之缺陷相關之資訊或其他資訊。如此,本實施形離 之缺陷檢查裝置1〇於多數情形下,以可進行通訊之方錢 接於其他裝置。然而,缺陷檢查裝置1〇當然亦可為單機。 =驟3。1之後,搬運機器人4自晶£2取出晶圓 明圓搬運至預對準器3(步驟地卜預對準器3進行 預先對準(步驟303)。搬運機器人4將經預 運至XY移動機構5(步驟3〇4)上,,之晶圓1搬 ; 阳ϋΐ由支持部12藉由真 I15801.doc -11- 丄333678 空夾盤而保持。繼而, w自動或者手動之方式挾持晶圓上 疋點,藉此進行精密對準(步驟3p5)。 本實施形態之缺陷檢查裝置1G可選擇如下模式,即,操 作者以手純錢m及㈣檢查裝41〇自動檢測 缺陷之模式。於操作者進行手動操料,操作者使用設置 於缺陷檢查裝置1G之未圖示之操作按紐或顯示面板來進行 操作。Item 9 and so on. The imaging element 9 is, for example, a device such as a CCD (Charge Coupled Device) or a CMOS (Complementary Metal-Oxide Semiconductor), but may be used in other ways. The optical portion 8 can be lifted and lowered by an elevating mechanism (not shown), and is configured, for example, so as to be close to the edge portion lc on the surface 丨a side of the wafer 1, or the elevating mechanism can be provided not only from the edge portion lee but also as follows. The mechanism moves the optical portion 8 in the horizontal plane (in the χ_γ plane), and sometimes the lifting mechanism is disposed on the support portion 12 to raise and lower the wafer up and down. With a camera;!! The obtained image is transmitted to a monitor (not shown). The operator can observe the image. The operation of the defect inspection device 1 constructed as described above will now be described. Figure 3 is a flow chart showing the action. The system controller that controls the operation of the defect inspection device 10, for example, is initially input from a defect list transmitted from another inspection device (or a computer connected thereto) or a local feed H computer (step (4) U. Defect list An electronic file, in which the information related to defects described by other inspection devices or other information is recorded in the defect list. Thus, the defect inspection device 1 of the present embodiment is capable of communication in most cases. The money is connected to other devices. However, the defect inspection device 1 can of course be a single machine. After the step 3. 1 , the transfer robot 4 takes the wafer from the crystal and transports it to the pre-aligner 3 (steps are pre-prepared) The aligner 3 performs pre-alignment (step 303). The transport robot 4 is pre-shipped to the XY moving mechanism 5 (step 3〇4), and the wafer 1 is moved; the impotence is supported by the support unit 12 by the true I15801. Doc -11- 丄 333678 is held by the empty chuck. Then, w is automatically or manually held on the wafer to perform precise alignment (step 3p5). The defect inspection device 1G of this embodiment can select the following mode. That is, the operator automatically checks the defect mode with the hand money m and (4) the inspection device 41. When the operator performs the manual operation, the operator uses the operation button or display panel (not shown) provided in the defect inspection device 1G. Take action.

於操作者進行手動操作時,首先,藉由操作者之操作輸 入,而使攝像機器11之光學部8移動至晶圓〗之邊緣部卜之 起點(步驟306-1)。具體而言,根據操作者之操作輸入,缺 陷檢查裝置10之未圖示之系統控制器將控制訊號傳送至 XY移動機構5或攝像機器n之升降機構等,以使光學部8 相對性地移動至邊緣部lc之起點。此時,光學部8接近至 距離晶圓1表面la之邊緣部lc極其接近之處。該距離例如When the operator performs the manual operation, first, the optical portion 8 of the camera 11 is moved to the starting point of the edge portion of the wafer by the operator's operation input (step 306-1). Specifically, according to the operator's operation input, the system controller (not shown) of the defect inspection device 10 transmits the control signal to the XY moving mechanism 5 or the elevating mechanism of the camera n or the like to move the optical portion 8 relatively. The starting point to the edge portion lc. At this time, the optical portion 8 is close to a portion close to the edge portion lc of the surface la of the wafer 1. The distance is for example

為100〜300 μπι,但並不侷限於該範圍,鬚根據光學部8之 焦距而定。 所謂「起點」,例如係由晶圓1之邊緣部1 c上預先決定 之X-Y平面内之座標表示,XY移動機構5根據該座標資訊 而使支持部12移動。起點例如可設定於圖4所示之晶圓1之 刻痕1 d ’但並不侷限於此處》圖4係晶圓之平面圖。晶圓1 之表面la具有形成有電路元件且經晶片化之製品區域,與 作為上述製品區域以外之區域的邊緣部1C。缺陷檢查裝置 1〇具有檢測產生於該邊緣部lc上之缺陷之功能。所謂缺陷 係指例如邊緣部1 c之缺口、光阻層之剝落、或者微粒之附 115801.doc 12- ⑶ 3678 著等右邊緣部ic有缺口,則會對整個晶圓丨施加應 因此古 、 f可能導致晶圓1之破裂等。於.存在光阻層剝落時, I釗落會導致產生微粒。再者,根據晶圓1之檢查工序, 有時於除去邊緣部1c之光阻層後,藉由缺陷檢查裝置10檢 查邊緣部1 c。 若光學部8移動至邊緣部lc之起點,則根據操作者之操 作輪入,藉由χγ移動機構5而使支持台〗3開始進行旋轉動 • 作或者沿邊緣部lc移動之動作(步驟3〇71) ^該支持台I]之 旋轉動作以如下方式實現,即,藉由父¥移動機構5在又軸 方向及γ軸方向上修正旋轉中心,使得即使支持台13旋 轉,光學部8與邊緣部lc之相對位置亦不會產生偏離。 又,沿邊緣部進行之移動,係藉由使支持台13以晶圓 中心為基準進行圓周移動而實現。或者,亦可為如下動 作,即,將可於晶圓之X-Y平面内,對晶圓周圍無間隙地 依次進行拍攝之缺陷座標位置追加至缺陷列表中,使XY % 移動機構5於該複數個點間進行移動(内插)。 如上所述,缺陷檢查裝置10藉由攝像機器u觀察邊緣部 lc ’並獲得晶圓邊緣部lc之放大圖像(步驟308-丨)。操作者 例如一面利用監視器觀察由攝像機器丨丨所獲得之圖像,一 面檢查缺陷,並根據需要,利用攝像機器丨丨取得存在有缺 陷之部分之圖像或者如圖5所示之整個圓周之圖像。由一 個正方形Α所包圍之範圍為攝像機器丨丨之攝像範圍系統 控制器將各個圖像作為靜態圖像而記憶於未圖示之記憶機 構中。當然,系統控制器亦可將由攝像機器u所獲得之圖 115801.doc 1333678 像作為動態圖像而記憶於未圖示之記憶媒體_ β 圖6係表示由攝像機器1丨所獲得之Ρ像6之一例的圖。於 此例中,比較大之微粒18附著於邊緣部1 c,或者邊緣部^ c 產生缺口 19。線23表示例如除去光阻層之邊界線,即,線 23表示圓中左側部分殘留有光阻層之狀態。線24為晶圓1 之最外周。多數情形下,上述製品區域16不進入攝像機器 11之攝像範圍。 另一方面,於缺陷檢查裝置10自動檢測缺陷時,在上述 步驟305之後,缺陷檢查裝置1〇之系統控制器將控制訊號 傳送至XY移動機構5及攝像機器n之升降機構等,以使光 學部8相對性地移動至上述邊緣部丨c之起點。藉此,光學 部8移動至邊緣部lc之起點(步驟3〇62)。光學部8移動至邊 緣部1 c之起點後,與手動操作時相同,系統控制器將控制 訊號傳送至XY移動機構5,以使支持台13開始進行旋轉動 作或者沿邊緣部lc移動之動作,依次拍攝邊緣部lc之圖 像。繼而,系統控制器根據所拍攝之圖像檢測缺陷,取得 缺陷資訊(步驟308-2P於此情形時,自動地檢測缺陷,但 缺陷之檢測方法可為眾所周知之方法。例如,可考慮設定 圖像濃淡之臨限值而檢測缺陷之方法。或者,亦可為其他 方法。檢測出缺陷時,系統控制器亦可根據需要,將所檢 測出之缺陷圖像之資訊與預先保存之缺陷資訊(典型性缺 陷之圖像等之資訊)加以比較,自動判斷缺陷之種類,並 對缺陷進行分類(步驟309)。所謂圖案匹配。 於上述步驟308-丨或者步驟309之後,系統控制器將關於 115801.doc -14· 1333678 缺陷之資訊,例如缺陷之圖I、種類、尺寸等,寫入自上 述其他檢查裝置❹高階舰W料傳送來並輸入之經 電子檔案化的缺陷列表中 '繼而,將關於缺陷之資訊輸出 至外部之解析缺陷之缺陷解析系統(步驟31〇)。如此,本實 施形態之缺陷檢查裝置1G於多數情形下,㊉了以可進行通 訊之方式連接於其他檢查裝置或高階之伺服器電腦之外, 亦連接於缺陷解析系統等。 此後,晶圓1由搬運機器人4自又丫移動機構5中取出,並 收谷至晶匣2(步驟311)。再者,該步驟311之晶圓丨之搬出 工序不一定必須在步驟31〇之後,亦可與步驟31〇之動作同 時進行。 如上所述’由於本實施形態之缺陷檢查裝置1〇係藉由支 持部13而至少支持晶圓1之背面ib之邊緣部ic,故可抑制 邊緣部lc之晃動,且可確實地檢測邊緣部lc之缺陷。尤 其’由於使用先前已存在之χγ移動機構5,故無須設置支 持晶圓1之邊緣部1 c之新機構。 本實施形態中,將攝像機器11用作缺陷檢測用之機器, 藉此可獲得人類憑視覺可認識之詳細之缺陷資訊。 本實施形態尤其有利於處理直徑為12英对之晶圓1之情 形。對先前之裝置而言,如12英吋之晶圓般’晶圓1越大 型化,邊緣部lc之晃動量或彎曲量越大,故難以使攝像機 器11接近邊緣部1 c。 圖12係表示先前技術之缺陷檢查單元之立體圖’例如表 示使用雷射光來檢查缺陷之單元。該缺陷檢查單元100具 115801.doc •15- 1333678 有保持並旋轉晶圓之旋轉台101,以及光學感測器單元 102 »圖13係表示該光學感測器單元1.02之立體圖。例如, 於晶圓1之邊緣部lc之上下配置有兩個光學感測器單元 102。此等光學感測器單元102各自具有:發光部103,其 可於晶圓1之直徑方向上掃描光;以及受光部104,其接受 由晶圓1之邊緣部lc所反射之光。該缺陷檢查單元loo —面 藉由旋轉台101旋轉晶圓1,一面自發光部103發出雷射 光,根據由受光部104所接受之光的強度等之變化資訊, 進行缺陷之分類等。 然而’此種缺陷檢查單元100並非如本發明之上述實施 形態之缺陷檢查裝置10般,構成為支持晶圓1之背面115之 整個表面,因此邊緣部lc之位置精度較差,無法取得高倍 率之高解析度圖像。 圖7係表示本發明其他實施形態之缺陷檢查裝置之構成 的方塊圖》由於此例之缺陷檢查裝置所具備之機械性要 素’與圖1所示之缺陷檢查裝置10所具備之機械性要素相 同,故省略或者簡化其說明。 缺陷檢查裝置20具備缺陷列表儲存部26、程式記憶部 28、系統控制器25以及通訊部27等。缺陷列表儲存部26儲 存上述缺陷列表。程式記憶部2 8例如記憶有座標資訊追加 程式31以及缺陷資訊追加程式32等,上述座標資訊追加程 式31將座標資訊追加至缺陷列表中,上述缺陷資訊追加程 式32追加關於產生於與上述座標資訊相對應之晶圓丨之座 標位置的缺陷之資訊。具體而言,藉由座標資訊追加程式 115801.doc -16· 1333678 Η,追加自高階伺服器電腦或其他檢查裝置傳送來且未記 載於缺1¾列表中之座標資訊,例如辱圓i之邊緣部丨C之座 標 > 訊。缺陷列表儲存部26或程式記憶部28可使用上述各 種把憶媒體。通訊部27與上述伺服器電腦或其他檢查裝置 進行通訊。系統控制器25全面控制缺陷檢查裝置2〇。 圖8係表示缺陷檢查裝置2〇之動作的流程圖。與圖3所示 之情形相同,若系統控制器25輸入缺陷列表(步驟801),則 搬運機器人4自晶匣2取出晶圓1,並將其搬運至預對準器 3(步驟802)。繼而,系統控制器25根據需要,將所期望之 缺陷座標追加至缺陷列表(步驟803)。此處,所謂「缺陷座 標j係指晶圓1表面1 a之邊緣部1 c上遍佈整個圓周之座 標’或者邊緣部lc上之一部分座標,而與是否已於該座標 上檢測出缺陷無關。於追加邊緣部1 c之一部分之座標時, 既可追加預先所決定之座標,亦可追加隨機座標。 圖9係表示自伺服器電腦或其他檢查裝置傳送來之缺陷 列表之例的圖。系統控制器25利用上述座標資訊追加程式 3 1,將晶圓表面1 a側之邊緣部1 c之座標資訊追加至缺陷列 表中,尤其是追加至「缺陷資訊」中之「缺陷座標」欄。 圖10表示如下狀態之缺陷列表··於「缺陷ID (identity,識 別碼)」中追加有例如「200〜221」’於「缺陷座標」之欄 中追加有例如3001(X座標)、1325(Y座標)、…。 於步驟803之後,與圖3之情形相同’實行步驟804〜步驟 806之動作。於步驟806之後,系統控制器25根據於步驟 803中所追加之缺陷列表之缺陷座標’使光學部8移動至與 115801.doc -17· 1333678 上述座標相對應之晶圓1表面上的位置(步驟8〇7) ^與上述 實施形態相同,該步驟807既可為藉由操作者之操作輸入 (藉由手動)而移動光學部8之形態,或者亦可為自動移動光 學部8之形態。此後,開始又¥移動機構5之動作(步驟 808),系統控制器25藉由攝像機器丨丨而檢查與該座標相對 應之晶圓1之邊緣部lc的缺陷。系統控制器25取得缺陷圖 像或者對其進行分類,並使用上述缺陷資訊追加程式32 • 將關於缺陷之資訊追加至缺陷列表(步驟809)。圖11表示追 加有「晶粒序號」、「缺陷尺寸」、「缺陷分類序號」、 圖像名稱」等之缺陷列表。於此例中,「缺陷尺寸」為 零時,表示無缺陷。由於有時晶粒形成至晶圓丨之邊緣部 lc,故有該晶粒序號。再者,此時,由於形成於邊緣部 之晶粒之形狀與通常之晶片不同,故無法製品化。 於步驟809之後’與圖3所示之情形相同,實施步驟81〇 以及8 11。 Φ 如上所述,由於本實施形態之缺陷檢查裝置20追加原先 之缺陷列表所沒有之任意座標,並檢查與該座標相對應之 邊緣部lc之缺陷,故可作成較先前更詳細之缺陷列表。 本發明並不侷限於以上所說明之實施形態,可進行各種 變形。 支持台13亦可為不支持晶圓背面ib側之中央部而僅支持 邊緣部之形態。此時’支持台13亦可沿晶圓1之外形而形 成為環狀。又,亦可考慮支持晶圓1之邊緣部lc之複數 處,例如3處以上之構造。 115801.doc •18- 1333678 上述實施形態之基板並不侷限於半導體晶圓,亦可為用 於液晶顯示器等之玻璃基板。 【圖式簡單說明】 圖1係表示本發明之一實施形態之缺陷檢查裝置之模式 性平面圖。 ' 圖2係表示χγ移動機構與攝像機器之模式性立體圖。 圖3係表示圖1所示之缺陷檢查裝置之動作的流程圖。 ^ 圖4係晶圓之平面圖。 圖5係表示由攝像機器所取得之複數個圖像範圍之圖。 圖6係表示由攝像機器所獲得之圖像之一例的圖。 圖7係表示本發明之其他實施形態之缺陷檢查裝置之構 成的方塊圖。 圖8係表示圖7之缺陷檢查裝置之動作的流程圖。 圖9係表示自伺服器電腦等傳送來之缺陷列表之例的 圖。 φ 圖10係表示追加有圖9所示之缺陷列表中所沒有之座標 的缺陷列表之例之圖。 圖11係表示追加有缺陷資訊之缺陷列表之例的圖。 圖12係表示先前技術之缺陷檢查單元之立體圖,例如係 表示使用雷射光檢查缺陷之單元之圖。圖13係圖12所示之 感測器單元之立體圖。 【主要元件符號說明】 1 半導體晶圓基板 1杜 晶圓表面 115801.doc 1333678 lb 晶圓背面 1 c 邊緣部 5 XY移動機構 10, 20 缺陷檢查裝置 11 攝像機器 12 支持部 25 系統控制器 26 缺陷列表儲存部 31 座標資訊追加程序 32 缺陷資訊追加.程式 115801.doc -20-It is 100 to 300 μm, but is not limited to this range, and it depends on the focal length of the optical portion 8. The "starting point" is represented, for example, by a coordinate in the X-Y plane determined in advance on the edge portion 1c of the wafer 1, and the XY moving mechanism 5 moves the support portion 12 based on the coordinate information. The starting point can be set, for example, to the score 1 d ' of the wafer 1 shown in Fig. 4, but is not limited thereto. Fig. 4 is a plan view of the wafer. The surface 1a of the wafer 1 has a wafer-formed product region in which a circuit component is formed, and an edge portion 1C which is a region other than the above-described article region. The defect inspection device 1 has a function of detecting a defect generated on the edge portion lc. The term "defect" means, for example, the notch of the edge portion 1 c, the peeling of the photoresist layer, or the attachment of the particles 115801.doc 12- (3) 3678 and the right edge portion ic is notched, so that the entire wafer defect is applied. f may cause cracking of wafer 1 and the like. When there is a peeling of the photoresist layer, the I collapse causes the generation of particles. Further, according to the inspection process of the wafer 1, the edge portion 1c may be inspected by the defect inspection device 10 after the photoresist layer of the edge portion 1c is removed. When the optical unit 8 moves to the starting point of the edge portion lc, the support table 3 starts to rotate or moves along the edge portion lc by the χγ moving mechanism 5 according to the operator's operation (step 3). 〇 71) ^ The rotation of the support table I] is realized by correcting the center of rotation in the direction of the axis and the direction of the γ axis by the parent ¥ moving mechanism 5, so that the optical portion 8 and even if the support table 13 is rotated The relative position of the edge portion lc does not deviate. Further, the movement along the edge portion is realized by circumferentially moving the support table 13 with respect to the wafer center. Alternatively, the operation may be performed by adding a defect coordinate position that can be sequentially photographed around the wafer without a gap in the XY plane of the wafer to the defect list, so that the XY % moving mechanism 5 is in the plurality of Move between points (interpolation). As described above, the defect inspection apparatus 10 observes the edge portion lc ' by the camera u and obtains an enlarged image of the wafer edge portion lc (step 308 - 丨). The operator checks the image obtained by the camera 利用, for example, while checking the defect, and uses the camera to obtain an image of the defective portion or the entire circumference as shown in FIG. 5 as needed. The image. The range enclosed by a square 为 is the camera range system of the camera 控制器 The controller stores each image as a still image in a memory mechanism not shown. Of course, the system controller can also store the image 115801.doc 1333678 obtained by the camera u as a moving image in a memory medium (not shown). FIG. 6 shows the image obtained by the camera 1丨. A diagram of an example. In this case, the relatively large particles 18 are attached to the edge portion 1c, or the edge portion ^c is formed with the notch 19. Line 23 indicates, for example, a boundary line from which the photoresist layer is removed, i.e., line 23 indicates a state in which a photoresist layer remains on the left portion of the circle. Line 24 is the outermost circumference of wafer 1. In most cases, the product area 16 described above does not enter the imaging range of the camera 11. On the other hand, when the defect inspection device 10 automatically detects the defect, after the above step 305, the system controller of the defect inspection device 1 transmits the control signal to the XY moving mechanism 5 and the lifting mechanism of the camera n, etc., to make the optical The portion 8 is relatively moved to the starting point of the edge portion 丨c. Thereby, the optical portion 8 moves to the starting point of the edge portion lc (step 3 - 62). After the optical portion 8 has moved to the starting point of the edge portion 1 c, the system controller transmits a control signal to the XY moving mechanism 5 in the same manner as in the manual operation, so that the support table 13 starts the rotation operation or moves along the edge portion lc. The image of the edge portion lc is sequentially taken. Then, the system controller detects the defect based on the captured image to obtain the defect information (step 308-2P automatically detects the defect in this case, but the detection method of the defect may be a well-known method. For example, it may be considered to set the image. The method of detecting the defect by the threshold of the shade. Alternatively, it may be other methods. When the defect is detected, the system controller may also, according to the need, the information of the detected defect image and the pre-stored defect information (typical) The information of the image of the sexual defect, etc. is compared, and the type of the defect is automatically determined, and the defect is classified (step 309). The pattern matching is performed. After the above step 308-丨 or step 309, the system controller will be about 115801. Doc -14· 1333678 Information on defects, such as the map I, type, size, etc. of the defect, is written from the above-mentioned other inspection device, the high-order ship W material is transmitted and input into the electronic filed defect list. The defect information is output to the external defect analysis system for analyzing the defect (step 31〇). Thus, the defect inspection device 1G of the present embodiment In most cases, it is connected to other inspection devices or high-end server computers in a communicable manner, and is also connected to a defect analysis system, etc. Thereafter, the wafer 1 is moved by the transfer robot 4 from the moving mechanism 5 The liquid crystal is removed from the wafer 2 (step 311). Further, the wafer stacking step of the step 311 does not have to be performed after the step 31, and may be performed simultaneously with the step 31. In the defect inspection apparatus 1 of the present embodiment, at least the edge portion ic of the back surface ib of the wafer 1 is supported by the support portion 13, so that the edge portion lc can be suppressed from being shaken, and the edge portion lc can be reliably detected. In particular, since the previously used χγ moving mechanism 5 is used, it is not necessary to provide a new mechanism for supporting the edge portion 1 c of the wafer 1. In the present embodiment, the camera 11 is used as a device for detecting defects. Detailed information on defects that can be recognized by humans is available. This embodiment is particularly advantageous for processing wafers 12 inches in diameter. For previous devices, such as 12-inch wafers 1 When the size is increased, the amount of sway or the amount of bending of the edge portion lc is larger, so that it is difficult to bring the camera 11 close to the edge portion 1 c. Fig. 12 is a perspective view showing a defect inspection unit of the prior art, for example, a unit for detecting defects using laser light. The defect inspection unit 100 has 115801.doc • 15 - 1333678 a rotary table 101 for holding and rotating a wafer, and an optical sensor unit 102 » Fig. 13 is a perspective view showing the optical sensor unit 1.02. For example, Two optical sensor units 102 are disposed above and below the edge portion lc of the wafer 1. The optical sensor units 102 each have a light emitting portion 103 that can scan light in the diameter direction of the wafer 1 and receive light. The portion 104 receives the light reflected by the edge portion lc of the wafer 1. The defect inspection unit loo-surface emits laser light from the light-emitting portion 103 by rotating the wafer 1 on the rotary table 101, and classifies the defect based on the change information of the intensity of the light received by the light-receiving portion 104. However, the defect inspection unit 100 is not configured to support the entire surface of the back surface 115 of the wafer 1 as in the defect inspection apparatus 10 of the above-described embodiment of the present invention. Therefore, the positional accuracy of the edge portion lc is poor, and high magnification cannot be obtained. High resolution image. Fig. 7 is a block diagram showing the configuration of a defect inspection apparatus according to another embodiment of the present invention. The mechanical element included in the defect inspection apparatus of this example is the same as the mechanical element of the defect inspection apparatus 10 shown in Fig. 1. Therefore, the description thereof is omitted or simplified. The defect inspection device 20 includes a defect list storage unit 26, a program storage unit 28, a system controller 25, a communication unit 27, and the like. The defect list storage unit 26 stores the above defect list. The program storage unit 2 8 stores, for example, a coordinate information addition program 31 and a defect information addition program 32. The coordinate information addition program 31 adds coordinate information to the defect list, and the defect information addition program 32 adds information about the coordinates generated. Information about defects in the coordinates of the corresponding wafer crucible. Specifically, the coordinate information appending program 115801.doc -16· 1333678 追加 is added to coordinate information transmitted from a high-order server computer or other inspection device and not recorded in the missing list, for example, the edge portion of the circle i丨C's coordinates > The defect list storage unit 26 or the program memory unit 28 can use the above-described various media. The communication unit 27 communicates with the server computer or other inspection device. The system controller 25 comprehensively controls the defect inspection device 2A. Fig. 8 is a flow chart showing the operation of the defect inspection device 2'. As in the case shown in Fig. 3, if the system controller 25 inputs the defect list (step 801), the transport robot 4 takes out the wafer 1 from the wafer 2 and transports it to the pre-aligner 3 (step 802). Then, the system controller 25 adds the desired defect coordinates to the defect list as needed (step 803). Here, the "defect coordinate j" refers to a coordinate of a portion of the edge portion 1c of the surface 1a of the wafer 1 over the entire circumference or a portion of the edge portion lc, regardless of whether or not a defect has been detected on the coordinate. When a coordinate of a portion of the edge portion 1c is added, a coordinate determined in advance may be added, or a random coordinate may be added. Fig. 9 is a view showing an example of a defect list transmitted from a server computer or another inspection device. The controller 25 adds the coordinate information of the edge portion 1 c on the wafer surface 1 a side to the defect list by using the coordinate information adding program 3 1 described above, and particularly adds it to the "defect coordinate" column in the "defect information". FIG. 10 shows a defect list in the following state: "For example, "200 to 221" is added to the "defect ID (identity)", and for example, 3001 (X coordinate) and 1325 are added to the column of "defect coordinate". Y coordinates),... After step 803, as in the case of Fig. 3, the operations of steps 804 to 806 are carried out. After step 806, the system controller 25 moves the optical portion 8 to the position on the surface of the wafer 1 corresponding to the coordinates of 115801.doc -17· 1333678 according to the defect coordinates of the defect list added in step 803 ( Step 8〇7) ^ As in the above embodiment, the step 807 may be in the form of moving the optical portion 8 by an operator's operation input (by manual operation), or may be in the form of the automatic moving optical portion 8. Thereafter, the operation of the moving mechanism 5 is started (step 808), and the system controller 25 checks the defect of the edge portion lc of the wafer 1 corresponding to the coordinate by the camera 丨丨. The system controller 25 acquires or classifies the defect image, and uses the above-described defect information addition program 32. • The information about the defect is added to the defect list (step 809). Fig. 11 shows a defect list in which "crystal number", "defect size", "defect classification number", image name", etc. are added. In this example, when the "defect size" is zero, it means no defect. Since the crystal grains are sometimes formed to the edge portion lc of the wafer crucible, the crystal grain number is present. Further, at this time, since the shape of the crystal grains formed at the edge portion is different from that of a normal wafer, the product cannot be produced. After step 809, as in the case shown in Fig. 3, steps 81A and 811 are carried out. Φ As described above, since the defect inspection device 20 of the present embodiment adds an arbitrary coordinate which is not included in the original defect list, and checks the defect of the edge portion lc corresponding to the coordinate, it is possible to create a defect list which is more detailed than before. The present invention is not limited to the embodiments described above, and various modifications can be made. The support table 13 may be in a form that does not support the center portion of the wafer back side ib side and supports only the edge portion. At this time, the support table 13 can also be formed in a ring shape along the outer shape of the wafer 1. Further, it is also conceivable to support a plurality of portions of the edge portion lc of the wafer 1, for example, three or more structures. 115801.doc • 18- 1333678 The substrate of the above embodiment is not limited to a semiconductor wafer, and may be a glass substrate for a liquid crystal display or the like. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic plan view showing a defect inspection apparatus according to an embodiment of the present invention. Fig. 2 is a schematic perspective view showing the χγ moving mechanism and the camera. Fig. 3 is a flow chart showing the operation of the defect inspection device shown in Fig. 1. ^ Figure 4 is a plan view of the wafer. Figure 5 is a diagram showing a plurality of image ranges taken by a camera. Fig. 6 is a view showing an example of an image obtained by a camera. Fig. 7 is a block diagram showing the configuration of a defect inspection apparatus according to another embodiment of the present invention. Fig. 8 is a flow chart showing the operation of the defect inspection device of Fig. 7. Fig. 9 is a view showing an example of a defect list transmitted from a server computer or the like. φ Fig. 10 is a view showing an example in which a defect list of coordinates not included in the defect list shown in Fig. 9 is added. Fig. 11 is a view showing an example of a defect list to which defective information is added. Fig. 12 is a perspective view showing a defect inspection unit of the prior art, for example, a view showing a unit for detecting a defect using laser light. Figure 13 is a perspective view of the sensor unit shown in Figure 12. [Main component symbol description] 1 Semiconductor wafer substrate 1 Du wafer surface 115801.doc 1333678 lb Wafer back 1 c Edge portion 5 XY moving mechanism 10, 20 Defect inspection device 11 Camera 12 Support portion 25 System controller 26 Defect List storage unit 31 coordinate information appending program 32 defect information addition. Program 115801.doc -20-

Claims (1)

1333678 ff年ό MlI曰修正本 第095143273號專利申請案 中文申請專利範圍替換本年6月) 十、申請專利範圍: 1. 一種缺陷檢查裝置,其特徵在於包括: 支持機構,其自基板之背面側支持該基板之邊緣部; 檢測機器,其檢測產生於由上述支持機構所支持之上 述基板表面側之上述邊緣部的缺陷;及 移動機構,其使由上述支持機構所支持之上述基板與 上述檢測機器相對性地移動。 2. 如請求項1之缺陷檢查裝置,其中 零 上述檢測機器係攝像機器。 3. 如請求項1之缺陷檢查裝置,其中 - 上述移動機構具有乂¥移動機構,該XY移動機構係使 — 由上述支持機構所支持之上述基板在平行於該基板之上 述表面之面内,於第丨方向及與該第丨方向正交之第2方 向上移動。 4·如請求項3之缺陷檢查裝置,其中1333678 ff year ό MlI 曰 本 095 143 143 273 095 095 095 095 095 095 095 095 095 095 095 095 095 095 095 095 095 095 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 a side supporting the edge portion of the substrate; a detecting device for detecting a defect generated at the edge portion of the substrate surface side supported by the support mechanism; and a moving mechanism for supporting the substrate supported by the support mechanism The detection machine moves relative to each other. 2. The defect inspection device of claim 1, wherein the zero detection machine is a camera. 3. The defect inspection device of claim 1, wherein - the moving mechanism has a movement mechanism, wherein the substrate supported by the support mechanism is in a plane parallel to the surface of the substrate, Moving in the second direction and the second direction orthogonal to the second direction. 4. The defect inspection device of claim 3, wherein 該内插機構係以於上 插的方式使上述基板 上述XY移動機構具有内插機構, 述面内之座標之複數個點間進行内 移動。 5·如請求項1之缺陷檢查裝置,其中進而包括: 儲存機構’其儲存記載有上述基板上之第W標資訊 之缺陷列表; 座標資訊追加機構,其將相當於 田於上述邊緣部之第2座 私貝訊追加至上述所儲存之缺陷 j弟2座標資訊 不同於上述第1座標資訊;及 115801-990611.docThe interpolation mechanism is configured such that the substrate XY moving mechanism has an interpolation mechanism for inserting, and the plurality of points in the plane of the surface move inward. 5. The defect inspection apparatus of claim 1, further comprising: a storage mechanism 'which stores a defect list in which the W-th information on the substrate is recorded; and a coordinate information addition mechanism which is equivalent to the field on the edge portion 2 private Beixun added to the above-mentioned stored defects, j coordinate 2 coordinate information is different from the above first coordinate information; and 115801-990611.doc 返遭緣部的缺陷β 々武進行控制··使用上述檢測機 追加之第2座標資訊相對應之上 歪裝置,其中The defect of the margin is controlled by the β 々 · · 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 檢測出之缺陷有關之缺陷資訊追加至上述缺陷列表。 —種缺陷檢查方法,其特徵在於包括: 如請求項5之缺陷檢查裝 自基板之背面側支持該基板之邊緣部的步驟; 使上述被支持之上述基板之上述邊緣部與檢測缺陷之 檢測機益相對性地接近的步驟;及 一面使上述邊緣部與上述檢測機器相對性地移動,一 面檢測產生於上述基板表面側之上述邊緣部之缺陷的步 115801-990611.docThe defect information related to the detected defect is added to the above defect list. a defect inspection method, comprising: a step of supporting a defect portion of the substrate from the back side of the substrate, and a step of supporting the edge portion of the supported substrate and the detecting defect detecting device a step of relatively close proximity; and a step of detecting a defect of the edge portion generated on the surface side of the substrate while moving the edge portion relative to the detecting device 115800-990611.doc
TW095143273A 2006-01-11 2006-11-22 Defects detection device and method TW200733285A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006004073A JP5002961B2 (en) 2006-01-11 2006-01-11 Defect inspection apparatus and defect inspection method

Publications (2)

Publication Number Publication Date
TW200733285A TW200733285A (en) 2007-09-01
TWI333678B true TWI333678B (en) 2010-11-21

Family

ID=38343945

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095143273A TW200733285A (en) 2006-01-11 2006-11-22 Defects detection device and method

Country Status (3)

Country Link
JP (1) JP5002961B2 (en)
CN (1) CN101000311A (en)
TW (1) TW200733285A (en)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5085953B2 (en) * 2006-02-24 2012-11-28 株式会社日立ハイテクノロジーズ Surface inspection device
US8577119B2 (en) 2006-02-24 2013-11-05 Hitachi High-Technologies Corporation Wafer surface observing method and apparatus
TWI478272B (en) * 2007-08-15 2015-03-21 尼康股份有限公司 A positioning device, a bonding device, a laminated substrate manufacturing device, an exposure device, and a positioning method
CN101442018B (en) * 2007-11-21 2010-11-03 中芯国际集成电路制造(上海)有限公司 Detection method for silicon wafer warpage degree
CN101777508B (en) * 2009-01-14 2013-03-13 政美仪器有限公司 System and method for picking out defective circuit small pieces
JP5107984B2 (en) * 2009-09-18 2012-12-26 株式会社日立ハイテクノロジーズ Stage equipment
US8908957B2 (en) * 2011-12-28 2014-12-09 Elitetech Technology Co.,Ltd. Method for building rule of thumb of defect classification, and methods for classifying defect and judging killer defect based on rule of thumb and critical area analysis
TW201421013A (en) * 2012-11-16 2014-06-01 Prov Technology Corp Electronic device inspection and classification equipment
TW201500733A (en) * 2013-06-25 2015-01-01 Chiuan Yan Technology Co Ltd Conductive glass inspection system
CN104142128B (en) * 2014-06-25 2016-09-14 上海功源自动化技术有限公司 A kind of measuring method of silicon wafer warpage degree
CN104458763A (en) * 2014-12-12 2015-03-25 元亮科技有限公司 Wide-view surface defect detector
KR101751801B1 (en) * 2016-05-18 2017-06-29 한국기계연구원 Defect inspecting device for substrate and inspecting method using the same
CN107993955A (en) * 2017-11-24 2018-05-04 上海华力微电子有限公司 A kind of method for detecting defects of wafer edge
CN108007351A (en) * 2017-12-31 2018-05-08 江苏科泰检测技术服务有限公司 The universal support plate of metal detection microscope
CN109738006A (en) * 2018-12-29 2019-05-10 大连益盛达智能科技有限公司 The rotatable detection platform mechanism of detection device
JP7304756B2 (en) * 2019-07-08 2023-07-07 三菱重工業株式会社 crimp terminal inspection device and method
CN110567970B (en) * 2019-09-23 2021-11-12 上海御微半导体技术有限公司 Edge defect detection device and method
CN112881428A (en) * 2021-01-20 2021-06-01 苏州协同创新智能制造装备有限公司 Method for detecting edge outer arc defects of curved screen based on laser ranging
CN113358662A (en) * 2021-06-10 2021-09-07 广东奥普特科技股份有限公司 Wafer surface defect detection device and wafer surface defect detection method
CN114088724B (en) * 2021-11-20 2023-08-18 深圳市北科检测科技有限公司 Display screen edge defect detection device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3492859B2 (en) * 1996-07-31 2004-02-03 京セラ株式会社 Wafer shape measuring device
JPH11237345A (en) * 1998-02-24 1999-08-31 Hitachi Ltd Surface measuring device
US6538733B2 (en) * 2000-08-22 2003-03-25 Ade Corporation Ring chuck to hold 200 and 300 mm wafer
WO2003028089A1 (en) * 2001-09-19 2003-04-03 Olympus Optical Co., Ltd. Semiconductor wafer inspection system

Also Published As

Publication number Publication date
JP2007188975A (en) 2007-07-26
JP5002961B2 (en) 2012-08-15
TW200733285A (en) 2007-09-01
CN101000311A (en) 2007-07-18

Similar Documents

Publication Publication Date Title
TWI333678B (en)
JP5409677B2 (en) IMAGE CREATION METHOD, SUBSTRATE INSPECTION METHOD, IMAGE CREATION METHOD, OR RECORDING MEDIUM RECORDING PROGRAM FOR EXECUTING SUBSTRATE INSPECTION METHOD
US9576854B2 (en) Peeling apparatus, peeling system, and peeling method
TW200822276A (en) Method for detecting the center of wafer and storage medium storing a program for executing the method
JPWO2006118152A1 (en) Appearance inspection apparatus, appearance inspection method, and peripheral edge inspection unit that can be attached to appearance inspection apparatus
CN101183655A (en) Pattern alignment method, pattern inspection apparatus, and pattern inspection system
TW200903699A (en) Probe apparatus
JP2017140682A (en) Device
JP2008064595A (en) Substrate inspecting device
JP2008196976A (en) Automatic visual inspection device
JP2007256272A (en) Surface inspection apparatus
TWI277165B (en) Probe area setting method and probe device
JP4156968B2 (en) Probe apparatus and alignment method
JP4342807B2 (en) Alignment method and alignment apparatus
JP2008021884A (en) Inspection apparatus
JPH11354599A (en) Method and device for inspecting silicon wafer for crystal defect
JP5753516B2 (en) Substrate imaging device and substrate imaging method
JP5316924B2 (en) Observation apparatus and observation method
JP6101481B2 (en) Internal inspection device for workpieces with laminated structure
JP2009063365A (en) Inspection device and inspection method
JP4334917B2 (en) Alignment device
JP2006261501A (en) Wafer id reader and wafer id reading method
JP7336814B1 (en) Inspection device, mounting device, inspection method, and program
KR101845091B1 (en) Substrate imaging apparatus and substrate imaging method
JP4703273B2 (en) Automatic visual inspection apparatus and automatic visual inspection method

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees