TWI322643B - Half bridge inverter of dual n-mos - Google Patents

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643 •九、發明說明： 【發明所屬之技術領域】 一種雙N通道半橋式換流裝置，尤指一種可以利用推 挽式控制晶月控制半橋式換流器，並驅動負載之換流裝置。 【先前技術】 TFT面板月光源之電力供應（卩⑽打SUpp 1 y )主要係 使用換流電路（lnverter Circuit)來達成能量之轉換及 驅動冷陰極螢光燈管（CCFL)之發光。習知的換流電路 (Inverter Circuit)係因電路拓樸之不同，一般分有半 橋式換流電路、全橋式換流電路及推挽式換流電路等，係 為將直流電轉換成交流電之換流電路。 請參考第一圖，係為習知推挽式換流電路應用於c c F l ^载之電路示意圖。變壓器T1係將電路區分成為一次側之 則級電路101與二次側之後級電路1〇2。該一次侧包 ，广直流電源Vcc、—第—開關W、—第二開關5 —，该二次側102包括有：至少一電容器卜、以）、 —負載（Load)、至少一二極體（D1、D2)等。再者，一次 側101與一次側1〇2間係連接有一推挽式控制晶片1〇3。 曰C圖，同時配合第二圖’係為習知推挽式控制 / j出訊#u及負載端輸出波形示意圖。推挽式控制晶片 :輸出一第一控制訊號a與一第二控制訊號b，复中第一 二制訊號&與第二控制訊號b係分別控制一次側1〇1之第 與第二開關Q2之切換動作，同時依據直流電源 「，用以提供能量並#由變壓器T1將直流電源^ 电【升壓轉換到二次側102，用以驅動負載（L0ad)，變 1322643 壓器T1之二次側102輸出電壓波形C係顯示C點之電壓波 形，如第二圖所示，二次側102輸出電壓波形c係為交流 電壓波形。 上述說明中該推挽式控制晶片1〇3係為 LINFINITY(MICROSEMI)公司生產之晶片，其型號為LX1686 及 LX1688 與 LX1691 等系列，或為 02 Micro international Limited公司生產之晶片，其型號為02-9RR、OZ9930、643 • Nine inventions: [Technical field of invention] A dual N-channel half-bridge converter, especially a push-pull control crystal-controlled half-bridge converter, and driving the load commutation Device. [Prior Art] The power supply of the TFT panel moon light source (卩(10) is SUPP 1 y ) mainly uses an inverter circuit to achieve energy conversion and drive the illumination of a cold cathode fluorescent lamp (CCFL). The conventional inverter circuit (Inverter Circuit) is generally divided into a half bridge converter circuit, a full bridge converter circuit, and a push-pull converter circuit for converting the direct current into alternating current. The commutation circuit. Please refer to the first figure, which is a circuit diagram of a conventional push-pull converter circuit applied to c c F l ^. The transformer T1 divides the circuit into a primary side circuit 101 and a secondary side subsequent stage circuit 1〇2. The primary side package, the wide DC power supply Vcc, the first switch W, the second switch 5, the secondary side 102 includes: at least one capacitor, and, - load, at least one diode (D1, D2), etc. Further, a push-pull control wafer 1〇3 is connected between the primary side 101 and the primary side 1〇2. The 曰C picture, together with the second picture, is a schematic diagram of the conventional push-pull control / j outgoing signal #u and the load output waveform. Push-pull control chip: output a first control signal a and a second control signal b, and the first and second control signals b and the second control signal b respectively control the first and second switches of the primary side 1〇1 Q2 switching action, according to the DC power supply, to provide energy and #DC power supply ^ by the transformer T1 [boost conversion to the secondary side 102, used to drive the load (L0ad), change 1322643 press T1 two The secondary side 102 output voltage waveform C shows the voltage waveform at point C. As shown in the second figure, the secondary side 102 output voltage waveform c is an alternating current voltage waveform. In the above description, the push-pull control wafer 1〇3 is The wafers produced by LINFINITY (MICROSEMI), the models are LX1686 and LX1688 and LX1691 series, or the chips produced by 02 Micro international Limited, the models are 02-9RR, OZ9930,

0Z9938、0Z9939 和 TEXAS INSTRUMENTS 公司生產之晶片， 其型號為TL-494、TL-594其型號為列，和BeyondWafers manufactured by 0Z9938, 0Z9939 and TEXAS INSTRUMENTS, model number TL-494, TL-594, model number, and Beyond

Innovation Technology公司生產之晶片，其型號為 BIT3193、BIT3713、BIT3715、BIT3501 等系列因廠牌眾多 而無法--舉例’僅以常用型號列舉。 請麥考第三圖，係為習知半橋式換流電路驅動負載之 電路示意圖。變壓HT2係將電路區分成為—次側之前級電 路201與二次側之後級電路202，一次側2〇1包括有·二 直流電源Vcc、二個電子開關dQ2)、一半橋式控制曰曰The wafers produced by Innovation Technology, the models BIT3193, BIT3713, BIT3715, BIT3501, etc., are not available due to the numerous brands - for example, only listed by common models. Please take the third picture of Mai Kao, which is a circuit diagram of a conventional half-bridge converter circuit to drive the load. The transformer HT2 system divides the circuit into a secondary side pre-stage circuit 201 and a secondary side subsequent stage circuit 202, and the primary side 2〇1 includes a · two DC power supply Vcc, two electronic switches dQ2), and a half bridge control

片丁L494、二電容器（ci、C2)及一，驅動變壓器丁『 _ 次側202包括有：一負載（Load)。 * 參考第三圖，同時配合第四圖，係為習知半 晶片輸出控制訊號及交流電源電壓波形示意圖。二 =片tL494係由二個輸出端D1、D2輪出控= D2，控制訊號di-D2透過驅動變壓哭丁用 Qi，二個電子開關之切換動作。該個分別控制 係為Ν通道場效電晶體或ρ通道場效電晶體。；= 電子開關（3卜Q2之切換動作，係將儲存ρ =由红個 之電能透過-交連電容C3分別傳：=;器Μ 土σο 之一次側 7The chip L494, the two capacitors (ci, C2) and the first, the driving transformer □ _ secondary side 202 includes: a load (Load). * Refer to the third figure, together with the fourth figure, which is a schematic diagram of the conventional half-chip output control signal and AC power supply voltage waveform. Two = piece tL494 is controlled by two output terminals D1, D2 = D2, control signal di-D2 through the drive transformer pressure crying with Qi, two electronic switches switch action. The respective control systems are Ν channel field effect transistors or ρ channel field effect transistors. ;= Electronic switch (3 b Q2 switching action, will store ρ = by red energy through - cross capacitance C3 respectively: =; the first side of the device σ σο 7

係為直泣带用/5以形成一交流電源aC。電容器C1、C2之電壓 '、；'、、直 >;IL 氣源 Vcc 之 一 jjL ^ y IV 提供能量給變塵哭T?電堡⑻2。該交流電源扣用^ 轉換到二次側20;田，亚藉由變壓器T2將交流電源升壓 ^ 〇2 ’用以驅動負載（Load)。 為丰和’若使用之換流電路（Inverter Circuit) 能動;:若;::=:要搭配半橋式控制晶片之控制才 之控制才能動作需要搭配減式控制晶片 者，換流電路：:,c實用上缺乏彈性與共用性。再 而導致換流電路⑴verwm因受制 搭配，多ΐ雜:Ϊ:制晶片無法共用並統-購料，或需要 控制ΐίπ:广的半橋式換流電路需要使福離變壓器來It is used as a straight weeping belt with /5 to form an AC power supply aC. Capacitors C1, C2 voltage ',; ',, straight >; IL gas source Vcc one jjL ^ y IV provide energy to the dust to cry T? electric Fort (8) 2. The AC power button is switched to the secondary side 20 by using ^, and the AC power is boosted by the transformer T2 ^ 〇 2 ' to drive the load. For Fenghe's use of the inverter circuit (Inverter Circuit); if;::=: to control with the control of the half-bridge control chip to be able to operate with the subtraction control chip, converter circuit:: , c practical lack of flexibility and sharing. Then the converter circuit (1) verwm is complicated and complicated. Ϊ: The wafer cannot be shared and purchased separately, or it needs to be controlled. 广ίπ: The wide half-bridge converter circuit needs to make the transformer

換動作’無W M 、’習知的半橋式換流電路使用之電子開 = J 道場效電晶體與同為?通道場效電晶以 【發電晶體和一 N通道場效電晶體所組成的7、 ，係ΓΓ此’本發明提供一種雙N通道半橋式換流裝置 ', 驅動電路連接於推挽式控制晶片之輪出俨盘_ '通迢場效電晶體所組成的半橋式開㈣件， ^糸接受推挽式控制晶片之控制，用“:電 件之切換動作。 千僑式開關紐 橋式一種雙N通道半橋式換流裝置，其係於習知半 二、？ f路之—個電子開關與控制晶片之間連接該驅動 。亚且’控制晶片更替為推挽式控制晶片，且分別輸 =一占空比（duty cycle)大於50%的第一控制訊號與一 j空比（duty cycle)小於5_ 一第二控制訊號以控制 5亥一個電子開關之切換動作。 ^上述說財’本發贿供之雙N通道半橋式換流裝置 一！^接於—變壓器之一次側，用來將—直流電源轉換為 :父k電源。雙N通道半橋式換妓置包括有·· _設有一 :山，出端與一第二輸出端之推挽式控制晶片，從該第- 二出:ΐΐί空比大於5_第一控制訊號’並從該第二 輸=”空比小於5_第二控制訊號。一開_接 推挽式控制晶片之第一輸出端。-SCR開 “，接於該_，陽_接於該直流電源。-第 電晶體’其閘極祕於該SGR開關之陰極， 一咏 於°亥直流電源，源極耦接於該變壓器之一次側。 效電晶體’其問極_緣挽式控制晶 月1而汲極耦接於該第一 N通道場效電晶 源極，源_接到該參考端。 曰組之 _二=:=!道半橋式換流裝置，係搭配- 占空比（小】十輪 大於50%的第一控制訊號與 控制曰h^ cycle)小於5_第二控制訊號之推挽式 ‘，：不會=組件=作。在實用上更具有i 控制晶片即可依#者只需使用推挽式 橋式換流電路。驅動控制推挽式換流電路或半 了進與接下來的詳細說明皆為示範性質，是為 他目的:優點專利範圍。而有關本發明的其 優，，4將在後續的說明與圖示加以闡述。 1322643 【實施方式】 請參考第五圖’係為本發明第—實施例之雙N通道半 橋式換流裝置之電路示意圖。其中本發明第—實施例之雙 N通道半橋式換流裝置係連接於一變壓器了2之一次側，用 以將—直流電源Vcc·成為一交流電源^，該交流電源 AC透過變壓器τ2提供負载⑺肋動作所需之能量。 復參考第五圖，本發明第一實施例之雙Ν通道半橋式 換流裳置包括有：一推挽式控制晶片1〇3 ' 一第一緩衝電 路34、一第二緩衝電路36、一驅動電路3〇及一半橋式開 關組件32。該推挽式控制晶片1〇3設有—第一輸出端a與 第一輸出立而B，έ玄第一輸出端A與該第二輸出端β分別 輸出占空比（duty cycle)大於50%的一第一控制訊號^ 與占空比（duty cycle)小於50%的一第二控制訊號b。該 第—緩衝電路34耦接於該推挽式控制晶片之第一輸出 端A ;該第二缓衝電路36則耦接於該推挽式控制晶片1〇3 之第二輸出端B ;該驅動電路3〇透過該第—緩衝電路34 輕接於該推挽式控制晶片103之第一輸出端a與該直流電 源Vcc，係接受該第一控制訊號a ;該半橋式開關組件32 係由二個N通道場效電晶體（Ql、Q2)組成，該半橋式開 關組件32柄接於該直流電源Vcc、該驅動電路30、該第二 緩衝電路36及該變壓器T2。該半橋式開關組件32受控於 該驅動電路30 ’並且配合耦接於該變壓器一次側之一共振 電容器C2作用，而將該直流電源Vcc切換為該交流電源 AC傳送至該變壓器T2之一次側。 復參考第五圖’該驅動電路30包括有：一開關Q4與 —SCR開關Q3。該開關Q4耦接於該第一緩衝電路34與一 1322643 參考端GND ;該SCR開關Q3之閘極（G)辆接於該開關Q4， 該SCR開關Q3之陽極（A)耦接於該直流電源Vcc，該SCR 開關Q3之陰極（K)耦接於該半橋式開關組件32。再者， 該半橋式開關組件32包括有一第一 N通道場效電晶體Q1 與一第二N通道場效電晶體Q2。該第一 N通道場效電晶體 Q1之閘極耦接於該SCR開關Q3之陰極（K)，該第一 N通 道場效電晶體Q1之汲極耦接於該直流電源Vcc，該第一 N 通道場效電晶體Q1之源極耦接於該變壓器T2之一次側。 該第二N通道場效電晶體Q2之閘極透過該第二緩衝電路 36耦接於該推挽式控制晶片103之第二輸出端B，該第二 N通道場效電晶體Q 2之沒極搞接於该弟一 N通道場效電晶 體Q1之源極’該弟二N通道場效電晶體Q2之源極搞接到 該參考端GND。 上述中，該直流電源Vcc經由第一 N通道場效電晶體 Q1的導通，提供一正直流電源+ Vcc給該變壓器T2，以形 成一正半周驅動，或是經由第二N通道場效電晶體Q2的導 通，耦接於該變壓器一次側之共振電容器C2係提供一負直 流電源一Vcc給該變壓器T2，以形成一負半周驅動。 復參考第五圖，該第一緩衝電路34包括有：一第一加 速二極體D1與一第一電阻R1。第一加速二極體D1之負極 (N)端耦接該推挽式控制晶片103之第一輸出端A，正極 (P)端耦接到該第一開關Q4。該第一電阻R1係並聯耦接 於該第一加速二極體D1。該第二緩衝電路36包括有：一 第二加速二極體D2與一第二電阻R2。第二加速二極體D2 之負極（N)端耦接該推挽式控制晶片103之第二輸出端B， 正極（P)端耦接到該第二N通道場效電晶體Q2之閘極。 11 1322643 . 第二電阻R2係並聯耦接於該第二加速二極體D2。 復參考第五圖，本發明之雙N通道半橋式換流裝置進 一步包括有一電容器C1，該電容器C1係耦|接於該第一 N 通道場效電晶體Q1之閘-源極間。電容器C1可以視電路特 性的需求而加入裝置中。在電路設計上電容器C1可以由該 第一 N通道場效電晶體Q1閘-源極間之一極際電容CGS取 代。 配合第五圖，請參考第十一圖，第十一圖為本發明之 推挽式控制晶片輸出訊號及交流電源電壓波形示意圖。推 挽式控制晶片103係為市面上習知的控制晶片如TEXAS INSTRUMENTS公司生產之晶片，其型號為TL-494、TL-594 等系列因廠牌眾多而無法一一舉例，僅以常用型號列舉。 如第十一圖所示，推挽式控制晶片103輸出端A係輸 出占空比大於50%的第一控制訊號a，而輸出端B輸出占空 比小於50%的第二控制訊號b。根據第一 N通道場效電晶體 Q1與第二N通道場效電晶體Q2的切換動作，並搭配共振 電容器C1的作用，係於變壓器T2 —次側可得到交流電源 AC之電壓波形ac。 . 復配合第五圖，參考第十一圖，於時間tl-t2時，第 一控制訊號a與第二控制訊號b都為低電位。低電位的第 一控制訊號a透過第一缓衝電路34傳送至開關Q4之控制 端，係控制開關Q4截止（OFF)。截止的開關Q4讓SCR開 關Q3之閘極（G)形成浮接（Π oat i ng)狀態，此時直流 電源Vcc會跨於SCR開關Q3之陽極A與陰極K之間，用以 驅動SCR開關Q3進入導通（ON)狀態。隨著SCR開關Q3 的導通（⑽），直流電源Vcc即驅動第一 N通道場效電晶體 12 1322643 - Q1進入導通（ON)狀態。 此外，低電位的第二控制訊號b透過第二緩衝電路36 傳送至第二N通道場效電晶體Q2之閘極，係控制第二N 通道場效電晶體Q2截止（OFF)。所以在時間t卜t2時，第 一 N通道場效電晶體Q1為導通（ON)狀態，第二N通道場 效電晶體Q2為截止（OFF)狀態。此時，直流電源Vcc可 以經由第一 N通道場效電晶體Q1之導通（ON)，而將能量 傳送至變壓器T2之一次側與該共振電容C2，此時變壓器 T2 —次側得到之電壓波形ac係為正直流電源+ Vcc，而形 成一正半周驅動。同時共振電容C2二端會建立一直流電 壓。 復配合第五圖，參考第十一圖，於時間t2-t3時，第 一控制訊號a係從低電位降上升到高電位，而第二控制訊 號b仍保持為低電位。此時，而電位的第一控制訊號a透 過第一緩衝電路34控制開關Q4進入導通（ON)狀態。導 通的開關Q4係將SCR開關Q3之閘極（G)拉到接地端GND， 根據SCR開關Q3的特性，此時SCR開關Q3為截止（OFF) 狀態，所以第一 N通道場效電晶體Q1則進入截止（OFF) 狀態。由於第二控制訊號b仍保持為低電位，所以第二N 通道場效電晶體Q2仍為截止（OFF)狀態。 由上述說明中可知，在時間t2-t3時，第一 N通道場 效電晶體Q1與第二Ν通道場效電晶體Q2都為截止（OFF) 狀態，讓變壓器T2之一次側形成開路。此時變壓器T2 — 次侧得到之電壓波形ac係為零電位。 復配合第五圖，參考第十一圖，於時間t3-t4時，第 一控制訊號a仍保持高電位，第二控制訊號b係由低電位 13 1322643 上升至高電位。第二控制訊號b透過第二緩衝電路3 6傳送 至第二N通道場效電晶體Q2之閘極，係控制第二N通道場 效電晶體Q2導通（ON)。由於第一控制訊號a仍保持為高 電位，所以第一 N通道場效電晶體Q1仍為截止（OFF)狀 態。 此時，第一 N通道場效電晶體Q1為截止（OFF)狀態， 第二N通道場效電晶體Q2為導通（ON)狀態。而建立在共 振電容C2二端上之直流電壓係根據導通的第二N通道場效 電晶體Q2，傳送至變壓器T2之一次側。因此變壓器T2 — 次侧得到之電壓波形ac係為負直流電源一Vcc，而形成一 負半周驅動。 復配合第五圖，參考第十一圖，於時間t4-t5時，第 一控制訊號a仍為尚電位’第二控制訊號b係由面電位下 降回到低電位。此時，第一 N通道場效電晶體Q1與第二N 通道場效電晶體Q2為截止（OFF)狀態，讓變壓器T2之一 次侧形成開路。此時變壓器T2 —次侧得到之電壓波形ac 為零電位。 復配合第五圖，參考第十一圖，本發明雙N通道半橋 式換流裝置之電路動作以及變壓器T2 —次側得到之電壓 波形ac，係在時間t5-t6時又回覆到時間tl-t2時之動作 與波形，依序如上述說明，係形成提供能量之交流電源 AC。同時，變壓器T2將交流電源AC升壓轉換後，係從二 次側提供能量給負載（LOAD)。 配合第五圖，請參考第六圖，係為本發明第二實施例 之雙N通道半橋式換流裝置之電路示意圖。在本發明第二 實施例中的元件與第一實施例相同者，係以相同符號標 14 1322643 示。第二實施例與第一實施例的電路動作原理與達成的功 效相同，經過比較下，其主要的差異處在於：第二實施例 係將第一實施例中的開關Q4以光偶合開關取代，藉由光偶 合開關的開關特性來保護雙N通道半橋式換流裝置中的電 路元件，以及刪去第一緩衝電路34之第一加速二極體D1 的使用。 配合第五圖，請參考第七圖，係為本發明第三實施例 之雙N通道半橋式換流裝置之電路示意圖。在本發明第三 實施例中的元件與第一實施例相同者，係以相同符號標 示。第三實施例與第一實施例的電路動作原理與達成的功 效相同，經過比較下，其主要的差異處在於：第三實施例 係將第一實施例中的開關Q4以雙極電晶體開關（BJT)取 代，以及刪去第一緩衝電路34之第一加速二極體D1的使 用。 配合第五圖，請參考第八圖，係為本發明第四實施例 之雙N通道半橋式換流裝置之電路示意圖。在本發明第四 實施例中的元件與第一實施例相同者，係以相同符號標 示。第四實施例與第一實施例的電路動作原理與達成的功 效相同，經過比較下，其主要的差異處在於：第四實施例 係將第一實施例中的SCR開關Q3以一 PNP電晶體Q31耦接 一 NPN電晶體Q32等效取代。 配合第五圖，請參考第九圖，係為本發明第五實施例 之雙N通道半橋式換流裝置之電路示意圖。在本發明第五 實施例中的元件與第一實施例相同者，係以相同符號標 示。第五實施例與第一實施例的電路動作原理與達成的功 效相同，經過比較下，其主要的差異處在於：第五實施例 15 ΐ!!第Γ實施例中的開關Q 4以光偶合開關取代，以及刪去 f — k衝電路34之第一加速二極體D1的使用。同時，將 弟1施例中的SCR開關q3以一 pNp電晶體⑽ 電晶體Q32等效取代。The action of 'no WM,' the traditional half-bridge converter circuit uses the electronic open = J-channel field-effect transistor and the same channel-effect field-effect crystal with [power generation crystal and an N-channel field effect transistor 7. The system of the present invention provides a dual N-channel half-bridge converter device, and the drive circuit is connected to the push-pull disk of the push-pull control chip _ 'Half-bridge type composed of the field-effect transistor Open (four) pieces, ^糸 accept push-pull control chip control, use: "switching action of electric parts. Thousand-year-old switch bridge type double N-channel half-bridge converter device, which is based on the conventional half-two The drive is connected between the electronic switch and the control chip. The control chip is replaced by a push-pull control chip, and the first control signal with a duty cycle greater than 50% is respectively output. And a jty ratio (duty cycle) is less than 5_ a second control signal to control the switching action of an electronic switch of 5 hai. ^ The above said "the bribe of the double N-channel half-bridge converter device! On the primary side of the transformer, used to convert the DC power to: the parent k power supply. Double N The road half-bridge type switching device includes a __ _ a mountain, an output terminal and a second output terminal push-pull control chip, from the first - second output: ΐΐί space ratio is greater than 5_ first control signal ' And from the second input = "empty ratio is less than 5_ second control signal. An open-connected push-pull control of the first output of the wafer. -SCR open", connected to the _, yang_ connected to the DC power supply. - The first transistor is the gate of the SGR switch cathode, the 亥 直流 直流 DC power supply, the source is coupled to the transformer The primary side. The effect transistor 'its pole _ edge pull type control crystal moon 1 and the drain pole is coupled to the first N channel field effect electric crystal source, the source _ is connected to the reference end. 曰 group _ two = :=! Road half-bridge converter, with matching - duty cycle (small) ten rounds greater than 50% of the first control signal and control 曰h^ cycle) less than 5_ second control signal push-pull', : No = component = do. In practical use, i control chip can be used only by using push-pull bridge converter circuit. Drive control push-pull converter circuit or half-in and subsequent details The descriptions are all exemplary, for the purpose of his purpose: the scope of the patents, and the advantages of the present invention, 4 will be explained in the following description and illustration. 1322643 [Embodiment] Please refer to the fifth figure A circuit diagram of a dual N-channel half-bridge converter device according to a first embodiment of the present invention, wherein the double N channel of the first embodiment of the present invention The bridge type converter device is connected to the primary side of a transformer 2 for turning the DC power source Vcc into an AC power source, and the AC power source AC is supplied through the transformer τ2 to provide the energy required for the load (7) rib action. In the fifth embodiment, the double-channel half-bridge commutation skirt of the first embodiment of the present invention includes: a push-pull control chip 1〇3', a first buffer circuit 34, a second buffer circuit 36, and a driving circuit. 3〇 and a half bridge switch assembly 32. The push-pull control chip 1〇3 is provided with a first output end a and a first output stand-up B, respectively, the first output end A and the second output end β respectively a second control signal b having a duty cycle greater than 50% and a second control signal b having a duty cycle less than 50%. The first buffer circuit 34 is coupled to the push-pull type The first output terminal A of the control chip is coupled to the second output terminal B of the push-pull control chip 1〇3; the driving circuit 3 is connected through the first buffer circuit 34 Receiving the first control on the first output end a of the push-pull control chip 103 and the DC power source Vcc The half-bridge switch assembly 32 is composed of two N-channel field effect transistors (Q1, Q2), the half-bridge switch assembly 32 is connected to the DC power supply Vcc, the drive circuit 30, the first The snubber circuit 36 and the transformer T2. The half bridge switch assembly 32 is controlled by the drive circuit 30' and is coupled to one of the resonance capacitors C2 on the primary side of the transformer, and the DC power source Vcc is switched to the AC The power supply AC is transmitted to the primary side of the transformer T2. Referring to the fifth figure, the driving circuit 30 includes: a switch Q4 and an SCR switch Q3. The switch Q4 is coupled to the first buffer circuit 34 and a 1322643 reference end. GND; the gate (G) of the SCR switch Q3 is connected to the switch Q4, the anode (A) of the SCR switch Q3 is coupled to the DC power source Vcc, and the cathode (K) of the SCR switch Q3 is coupled to the half Bridge switch assembly 32. Furthermore, the half bridge switch assembly 32 includes a first N-channel field effect transistor Q1 and a second N-channel field effect transistor Q2. The gate of the first N-channel field effect transistor Q1 is coupled to the cathode (K) of the SCR switch Q3, and the first N-channel field effect transistor Q1 is coupled to the DC power source Vcc, the first The source of the N-channel field effect transistor Q1 is coupled to the primary side of the transformer T2. The gate of the second N-channel field effect transistor Q2 is coupled to the second output terminal B of the push-pull control chip 103 through the second buffer circuit 36. The second N-channel field effect transistor Q 2 is not It is connected to the source of the N-channel field effect transistor Q1 of the younger brother. The source of the second N-channel field effect transistor Q2 is connected to the reference terminal GND. In the above, the DC power source Vcc is turned on by the first N-channel field effect transistor Q1 to provide a positive DC power supply + Vcc to the transformer T2 to form a positive half-cycle drive, or via a second N-channel field effect transistor. The conduction of Q2, coupled to the resonant capacitor C2 on the primary side of the transformer, provides a negative DC power supply, Vcc, to the transformer T2 to form a negative half cycle drive. Referring to the fifth figure, the first buffer circuit 34 includes a first accelerating diode D1 and a first resistor R1. The negative (N) terminal of the first accelerating diode D1 is coupled to the first output terminal A of the push-pull control chip 103, and the positive (P) terminal is coupled to the first switch Q4. The first resistor R1 is coupled in parallel to the first accelerating diode D1. The second buffer circuit 36 includes a second accelerating diode D2 and a second resistor R2. The anode (N) end of the second accelerating diode D2 is coupled to the second output terminal B of the push-pull control chip 103, and the anode (P) terminal is coupled to the gate of the second N-channel field effect transistor Q2. . 11 1322643. The second resistor R2 is coupled in parallel to the second accelerating diode D2. Referring to the fifth figure, the dual N-channel half-bridge converter of the present invention further includes a capacitor C1 coupled between the gate and the source of the first N-channel field effect transistor Q1. Capacitor C1 can be added to the device depending on the needs of the circuit. In circuit design, capacitor C1 can be replaced by one of the gate-source interpole capacitance CGS of the first N-channel field effect transistor Q1. With reference to the fifth figure, please refer to the eleventh figure. The eleventh figure is a schematic diagram of the push-pull control chip output signal and the AC power supply voltage waveform of the present invention. The push-pull control chip 103 is a commercially available control chip such as a wafer produced by TEXAS INSTRUMENTS, and the models TL-494, TL-594, etc. cannot be exemplified by a large number of brands, and are listed only by common models. . As shown in Fig. 11, the output terminal A of the push-pull control chip 103 outputs a first control signal a having a duty ratio greater than 50%, and the output terminal B outputs a second control signal b having a duty ratio of less than 50%. According to the switching action of the first N-channel field effect transistor Q1 and the second N-channel field effect transistor Q2, and in conjunction with the action of the resonant capacitor C1, the voltage waveform ac of the AC power source AC is obtained on the secondary side of the transformer T2. Referring to the fifth figure, referring to the eleventh figure, at time t1 - t2, both the first control signal a and the second control signal b are low. The low potential first control signal a is transmitted through the first buffer circuit 34 to the control terminal of the switch Q4, and the control switch Q4 is turned OFF. The cut-off switch Q4 causes the gate (G) of the SCR switch Q3 to form a floating (Π oat i ng) state. At this time, the DC power supply Vcc will cross the anode A and the cathode K of the SCR switch Q3 to drive the SCR switch. Q3 enters the ON state. As the SCR switch Q3 is turned on ((10)), the DC power source Vcc drives the first N-channel field effect transistor 12 1322643 - Q1 to enter an ON state. In addition, the second control signal b of the low potential is transmitted to the gate of the second N-channel field effect transistor Q2 through the second buffer circuit 36 to control the second N-channel field effect transistor Q2 to be turned OFF. Therefore, at the time t t2, the first N-channel field effect transistor Q1 is in an ON state, and the second N-channel field effect transistor Q2 is in an OFF state. At this time, the DC power source Vcc can be turned on (ON) through the first N-channel field effect transistor Q1, and the energy is transmitted to the primary side of the transformer T2 and the resonant capacitor C2, and the voltage waveform obtained by the transformer T2 - the secondary side. Ac is a positive DC power supply + Vcc, forming a positive half cycle drive. At the same time, the two ends of the resonant capacitor C2 will establish a DC voltage. Referring to the fifth figure, referring to the eleventh figure, at time t2-t3, the first control signal a rises from a low potential to a high level, and the second control signal b remains at a low level. At this time, the first control signal a of the potential controls the switch Q4 to enter the ON state through the first buffer circuit 34. The turned-on switch Q4 pulls the gate (G) of the SCR switch Q3 to the ground GND. According to the characteristics of the SCR switch Q3, the SCR switch Q3 is in the OFF state, so the first N-channel field effect transistor Q1 Then enter the OFF state. Since the second control signal b remains at a low potential, the second N-channel field effect transistor Q2 is still in an OFF state. As can be seen from the above description, at time t2-t3, both the first N-channel field effect transistor Q1 and the second channel-effect field effect transistor Q2 are in an OFF state, and the primary side of the transformer T2 is opened. At this time, the voltage waveform ac obtained by the transformer T2 - the secondary side is zero potential. Referring to the fifth figure, referring to the eleventh figure, at time t3-t4, the first control signal a remains high, and the second control signal b rises from the low potential 13 1322643 to a high potential. The second control signal b is transmitted to the gate of the second N-channel field effect transistor Q2 through the second buffer circuit 36 to control the second N-channel field effect transistor Q2 to be turned ON. Since the first control signal a remains at a high potential, the first N-channel field effect transistor Q1 is still in an OFF state. At this time, the first N-channel field effect transistor Q1 is in an OFF state, and the second N-channel field effect transistor Q2 is in an ON state. The DC voltage established at the two ends of the resonant capacitor C2 is transmitted to the primary side of the transformer T2 according to the turned-on second N-channel field effect transistor Q2. Therefore, the voltage waveform ac obtained by the transformer T2 - the secondary side is a negative DC power supply - Vcc, and forms a negative half cycle drive. Referring to the fifth figure, referring to the eleventh figure, at time t4-t5, the first control signal a is still at a potential potential. The second control signal b is lowered from the surface potential back to a low potential. At this time, the first N-channel field effect transistor Q1 and the second N-channel field effect transistor Q2 are in an OFF state, so that one side of the transformer T2 forms an open circuit. At this time, the voltage waveform ac obtained by the transformer T2 - the secondary side is zero potential. Referring to the fifth figure, referring to the eleventh figure, the circuit action of the double N-channel half-bridge converter device of the present invention and the voltage waveform ac obtained by the secondary side of the transformer T2 are replied to the time tl at time t5-t6. The action and waveform at -t2, as described above, form an AC power source AC that provides energy. At the same time, after the transformer T2 boosts the AC power source AC, it supplies energy from the secondary side to the load (LOAD). Referring to the fifth figure, please refer to the sixth figure, which is a circuit diagram of a double N-channel half-bridge converter device according to a second embodiment of the present invention. The elements in the second embodiment of the present invention are the same as those in the first embodiment, and are denoted by the same reference numerals 14 1322643. The principle of operation of the second embodiment is the same as that of the first embodiment. After comparison, the main difference is that the second embodiment replaces the switch Q4 in the first embodiment with an optical coupling switch. The circuit elements in the dual N-channel half-bridge converter are protected by the switching characteristics of the optical coupling switch, and the use of the first acceleration diode D1 of the first buffer circuit 34 is deleted. Referring to the fifth figure, please refer to the seventh figure, which is a circuit diagram of a double N-channel half-bridge converter device according to a third embodiment of the present invention. The elements in the third embodiment of the present invention are the same as those in the first embodiment, and are denoted by the same reference numerals. The circuit operation principle of the third embodiment is the same as that of the first embodiment. After comparison, the main difference is that the third embodiment uses the switch Q4 in the first embodiment as a bipolar transistor switch. (BJT) replaces, and deletes the use of the first accelerating diode D1 of the first buffer circuit 34. With reference to the fifth figure, please refer to the eighth figure, which is a circuit diagram of a double N-channel half-bridge converter device according to a fourth embodiment of the present invention. The elements in the fourth embodiment of the present invention are the same as those in the first embodiment, and are denoted by the same reference numerals. The circuit operation principle of the fourth embodiment is the same as that of the first embodiment. After comparison, the main difference is that the fourth embodiment uses the SCR switch Q3 in the first embodiment as a PNP transistor. Q31 is coupled to an NPN transistor Q32 equivalent replacement. Referring to the fifth figure, please refer to the ninth figure, which is a circuit diagram of a double N-channel half-bridge converter device according to a fifth embodiment of the present invention. The elements in the fifth embodiment of the present invention are the same as those in the first embodiment, and are denoted by the same reference numerals. The circuit operation principle of the fifth embodiment is the same as that of the first embodiment. After comparison, the main difference is that the fifth embodiment 15 ΐ!! The switch Q 4 in the third embodiment is optically coupled. The switch is replaced, and the use of the first accelerating diode D1 of the f-k rush circuit 34 is deleted. At the same time, the SCR switch q3 in the embodiment of the first embodiment is equivalently replaced by a pNp transistor (10) transistor Q32.

錐酉己合第五圖’請參考第十圖’係為本發明第六實施例 N通這半橋式換流裝置之電路示意圖。在本發明第六 實施，中，元件與第一實施例相同者，係以相同符號標 不。第六實施例與第一實施例的電路動作原理與達成的"功 效相同，經過比較下，其主要的差異處在於：第六實施例 係將第一實施例中的開關Q4以雙極電晶體開關（BJT)取 代，以及刪去第一緩衝電路34之第一加速二極體Dl的使 用。同時’將第一實施例中的SCR開關Q3以一 pNp電晶體 Q31耦接一 npn電晶體Q32等效取代。The fifth diagram of the cone-shaped hexagram is referred to as the circuit diagram of the sixth embodiment of the present invention. In the sixth embodiment of the present invention, the same components as those in the first embodiment are denoted by the same reference numerals. The circuit operation principle of the sixth embodiment and the first embodiment are the same as the achieved "efficiency". After comparison, the main difference is that the sixth embodiment is to use the switch Q4 in the first embodiment as a bipolar power. The crystal switch (BJT) is substituted, and the use of the first accelerating diode D1 of the first buffer circuit 34 is deleted. At the same time, the SCR switch Q3 in the first embodiment is equivalently coupled by a pNp transistor Q31 coupled to an npn transistor Q32.

綜上所述’本發明之雙N通道半橋式換流裝置，係搭 配—驅動電路與一個輸出有占空比大於50%的第一控制訊 號與占空比（duty cycle)小於50%的第二控制訊號之推 挽式控制晶片，來控制半橋開關組件動作。在實用上更具 有彈性’且不會受限於控制晶片。並且，業者只需使用推 挽式控制晶片即可依實際需求來驅動控制推挽式換流電路 或半橋式換流電路。 惟’以上所述，僅為本發明最佳之一的具體實施例之 詳細說明與圖式，任何熟悉該項技藝者在本發明之領域 内’可輕易思及之變化或修飾皆可涵蓋在以下本案之專利 範圍。 【圖式簡單說明】 第一圖為習知推挽式換流電路驅動負載之電路示意圖； 16 1322643 . 第二圖為習知推挽式控制晶片輸出控制訊號及負載端輸出 電壓波形示意圖； 第三圖為習知半橋式換流電路驅動負載之電路示意圖； 第四圖為習知半橋式控制晶片輸出控制訊號及交流電源電 壓波形示意圖； 第五圖為本發明第一實施例之雙N通道半橋式換流裝置 之電路示意圖； 第六圖為本發明第二實施例之雙N通道半橋式換流裝置 之電路示意圖； 第七圖為本發明第三實施例之雙N通道半橋式換流裝置 之電路示意圖； 第八圖為本發明第四實施例之雙N通道半橋式換流裝置 之電路示意圖； 第九圖為本發明第五實施例之雙N通道半橋式換流裝置 之電路示意圖； 第十圖為本發明第六實施例之雙N通道半橋式換流裝置 之電路示意圖，及 第十一圖為本發明推挽式控制晶片之輸出訊號及交流電源 電壓波形示意圖。 【主要元件符號說明 習知： 102後級電路 T1變壓器 b第二控制訊號 101前級電路 103推挽式控制晶片 - a第一控制訊號 17 1322643 c變壓器T1之二次側輸出電壓波形 201前級電路 Τ2變壓器 TL494推挽式控制晶片 D1 -D2輸出控制訊號 Q2第二開關 本發明： 103推挽式控制晶片 32半橋式開關組件 36第二緩衝電路 C1電容器 AC交流電源 Τ2變壓器 202後級電路In summary, the dual N-channel half-bridge converter device of the present invention is a collocation-drive circuit and an output having a duty cycle greater than 50% of the first control signal and a duty cycle of less than 50%. A push-pull control chip of the second control signal controls the operation of the half-bridge switch assembly. It is more flexible in practice' and is not limited to control wafers. Moreover, the operator can drive and control the push-pull converter circuit or the half-bridge converter circuit according to actual needs by simply using the push-pull control chip. In the above description, the detailed description and drawings of the specific embodiments of the present invention are only one of the preferred embodiments of the present invention, and any changes or modifications that can be easily considered in the field of the present invention can be covered. The scope of the patent in this case below. [Simple diagram of the diagram] The first diagram is a circuit diagram of a conventional push-pull converter circuit to drive a load; 16 1322643. The second diagram is a schematic diagram of a conventional push-pull control chip output control signal and a load terminal output voltage waveform; The three figures are circuit diagrams of the conventional half-bridge converter circuit driving load; the fourth figure is a schematic diagram of the conventional half-bridge control chip output control signal and the AC power supply voltage waveform; the fifth figure is the double of the first embodiment of the present invention FIG. 6 is a circuit diagram of a dual N-channel half-bridge converter device according to a second embodiment of the present invention; and FIG. 7 is a dual N-channel according to a third embodiment of the present invention; FIG. 8 is a circuit diagram of a dual N-channel half-bridge converter device according to a fourth embodiment of the present invention; and FIG. 9 is a dual N-channel half bridge according to a fifth embodiment of the present invention; FIG. 10 is a circuit diagram of a dual N-channel half-bridge converter device according to a sixth embodiment of the present invention, and FIG. 11 is an output of the push-pull control chip of the present invention. No AC power supply voltage and the waveform diagram. [Main component symbol description: 102 post-stage circuit T1 transformer b second control signal 101 pre-stage circuit 103 push-pull control chip - a first control signal 17 1322643 c transformer T1 secondary side output voltage waveform 201 preamp Circuit Τ 2 transformer TL494 push-pull control chip D1 - D2 output control signal Q2 second switch The present invention: 103 push-pull control chip 32 half bridge switch assembly 36 second snubber circuit C1 capacitor AC ac power Τ 2 transformer 202 rear stage circuit

Q1第一開關 ac交流電源 30驅動電路 34第一緩衝電路 GND參考端 LOAD負載 Vcc直流電源 C2共振電容器Q1 first switch ac AC power supply 30 drive circuit 34 first buffer circuit GND reference terminal LOAD load Vcc DC power supply C2 resonance capacitor

1818

Claims (1)

、申請專利範圍： h:種，N通道半橋式換流裝置，連接於-變壓器之-次 、匕係將-直流電源轉換為—交流電源，包括有： 一式控!1晶片，係設有—第-輸出端與-第二輪 允女而’邊第一輸出端輸出占空比大於50%的一第一 控制訊號，該第二輸出端輸出占空比小於50%的一 第二控制訊號； 開關，係耦接於一參考端與該推挽式控制晶片之第 一輸出端； SCR開關，該SCR開關之閘極耦接於該開關，該SCR 開關之陽極耦接於該直流電源； 第一 N通道場效電晶體，該第一 N通道場效電晶體 之閘極耦接於該SCR開關之陰極，該第一 n通道場 效電晶體之汲極耦接於該直流電源，該第一 N通道 場效電晶體之源極耦接於該變壓器之一次側；及 第二N通道場效電晶體，該第二N通道場效電晶體 =閘極耦接於該推挽式控制晶片之第二輸出端，該 第二N通道場效電晶體之汲極耦接於該第一 N通道 場效電晶體之源極，该第二N通道場效電晶體之源 極耦接到該參考端。 6月寻利乾圍第丄π〜叉”遇迢平橋式換流裝置 括其中該直流電源經由第-Ν通道場效電晶體的導通， 電源給該麵器，以形成_正半周驅動。 。申睛專利範圍第】項所述之雙N通道半橋式換流裝置 ，其令進—步包括有-共振電容器，該共振電容器輕接 19 1322643 於該變壓器之一次側。 4. 如申請專利範圍第3項所述之雙N通道半橋式換流裝置 ，其中經由第二N通道場效電晶體的導通，該共振電容 器提供一負直流電源給該變壓器，以形成一負半周驅動。 5. 如申請專利範圍第1項所述之雙N通道半橋式換流裝置 ，其中該開關透過一限流電阻耦接於該推挽式控制晶片 之第一輸出端。 6. 如申請專利範圍第5項所述之雙N通道半橋式換流裝置 ，其中該開關可為一雙極電晶體開關或一光偶合開關。 7. 如申請專利範圍第1項所述之雙N通道半橋式換流裝置 ，進一步包括有一第一緩衝電路，該第一缓衝電路包括 有： 一第一加速二極體，其負極（N)端耦接該推挽式控制 晶片之第一輸出端，其正極（P)端耦接到該開關； 及 一第一電阻，係並聯耦接於該第一加速二極體。 8. 如申請專利範圍第1項所述之雙N通道半橋式換流裝置 ，進一步包括有一第二緩衝電路，該第二缓衝電路包括 有： 一第二加速二極體，其負極（N)端耦接該推挽式控制 晶片之第二輸出端，其正極（P)端耦接到該第二N 通道場效電晶體之閘極；及 一第二缓衝電阻，係並聯耦接於該第二加速二極體。 9. 如申請專利範圍第1項所述之雙N通道半橋式換流裝置 ，進一步包括有一電容器，該電容器係耦接於該第一 N 20 通這場效電晶體之閘-源極間。 】0.，^^=〗項所述之雙^道半橋式換流裝置 等效=開關可由一PNP電晶_接-_電晶體 1以f流裝置，連接於-變壓器之-次 =Γ第，係設有一第-輪出端與-第二輸 :端輸出占空比大於5_-第-二=二弟二輸出端輪出占空比小於5_一 -=緩衝電路，接於該推挽式控制晶片之第一輸 一=緩衝電路，耗接於該推挽式控制晶片之第二輸 一驅動電路’透過該 制晶片之第-輸出端與接於該推挽式控 控制訊號；及 "L電/原，係接受該第一 一半橋式開關組件，係 成，該半橋式’、一個N通道場效電晶體組 電路、該第二直流電源、該驅動 組件受控於該驅動電半橋式開關 :交流電源傳送至該變壓器之；㈣源切換為 12.如申請專利範 人側 置，其中進-步包括^所述之雙N通道半橋式換流裝 接於該變壓器之一次共振電容器，該共振電容器耦 21Patent application scope: h: kind, N-channel half-bridge converter device, connected to -transformer-secondary, 匕------------------------------------------------------------------------- - a first control signal with a duty ratio greater than 50% at the first output and a second output with a duty ratio of less than 50% The switch is coupled to a reference end and a first output end of the push-pull control chip; the SCR switch, the gate of the SCR switch is coupled to the switch, and the anode of the SCR switch is coupled to the DC power supply a first N-channel field effect transistor, wherein a gate of the first N-channel field effect transistor is coupled to a cathode of the SCR switch, and a drain of the first n-channel field effect transistor is coupled to the DC power source, a source of the first N-channel field effect transistor is coupled to the primary side of the transformer; and a second N-channel field effect transistor, the second N-channel field effect transistor=the gate is coupled to the push-pull type Controlling a second output end of the chip, the drain of the second N-channel field effect transistor is coupled to the first Source effect transistor N-channel field pole, the second N-channel field effect source transistor coupled to the reference electrode of the terminal. In June, the 寻 〜 〜 叉 ” ” ” ” ” ” ” ” ” ” ” ” 迢 迢 迢 迢 迢 迢 迢 迢 迢 迢 迢 迢 迢 迢 迢 迢 迢 迢 迢 迢 迢 迢 迢 迢 迢 迢 迢 迢 迢 迢 迢 迢 迢 迢The double N-channel half-bridge converter device described in the scope of the patent scope includes the -resonant capacitor, which is connected to the primary side of the transformer by light. The dual N-channel half-bridge converter device of claim 3, wherein the resonant capacitor provides a negative DC power to the transformer via the conduction of the second N-channel field effect transistor to form a negative half-cycle drive. 5. The dual N-channel half-bridge converter device of claim 1, wherein the switch is coupled to the first output of the push-pull control chip via a current limiting resistor. The dual N-channel half-bridge converter device according to the item 5, wherein the switch can be a bipolar transistor switch or an optical coupler switch. 7. The double N channel half according to claim 1 Bridge converter, further comprising a first buffer circuit, the first buffer circuit includes: a first accelerating diode, a negative (N) end of which is coupled to the first output end of the push-pull control chip, and a positive (P) terminal coupled And the first resistor is coupled in parallel to the first accelerating diode. The dual N-channel half-bridge converter according to claim 1 further includes a first The second buffer circuit includes: a second accelerating diode having a negative (N) terminal coupled to the second output of the push-pull control chip and a positive (P) terminal coupled thereto a gate of the second N-channel field effect transistor; and a second buffer resistor coupled in parallel to the second acceleration diode. 9. The double N channel half as described in claim 1 The bridge type converter device further includes a capacitor coupled between the gate and the source of the first N20 pass transistor. 】0., ^^= The half-bridge converter device equivalent = switch can be connected to the - transformer by a PNP transistor - _ transistor 1 with f-flow device =Γ, the system has a first-round output and a second output: the output duty ratio is greater than 5_-the second-second two-second output terminal duty cycle is less than 5_one-= snubber circuit, a first input/sampling circuit of the push-pull control chip, and a second one driving circuit of the push-pull control chip is transmitted through the first output terminal of the wafer and connected to the push-pull control Control signal; and "L power/original, accepting the first half bridge switch assembly, the half bridge type, an N-channel field effect transistor circuit, the second DC power supply, the drive The component is controlled by the driving electric half-bridge switch: the AC power is transmitted to the transformer; (4) the source is switched to 12. If the patent application is placed sideways, wherein the step-by-step includes the double N-channel half-bridge switching described a primary resonant capacitor connected to the transformer, the resonant capacitor coupling 21