TWI318437B - Resistive random access memory (rram) and method for fabricating the same - Google Patents
Resistive random access memory (rram) and method for fabricating the sameInfo
- Publication number
- TWI318437B TWI318437B TW95142795A TW95142795A TWI318437B TW I318437 B TWI318437 B TW I318437B TW 95142795 A TW95142795 A TW 95142795A TW 95142795 A TW95142795 A TW 95142795A TW I318437 B TWI318437 B TW I318437B
- Authority
- TW
- Taiwan
- Prior art keywords
- rram
- fabricating
- same
- random access
- access memory
- Prior art date
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW95142795A TWI318437B (en) | 2006-11-20 | 2006-11-20 | Resistive random access memory (rram) and method for fabricating the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW95142795A TWI318437B (en) | 2006-11-20 | 2006-11-20 | Resistive random access memory (rram) and method for fabricating the same |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200824046A TW200824046A (en) | 2008-06-01 |
TWI318437B true TWI318437B (en) | 2009-12-11 |
Family
ID=44771383
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW95142795A TWI318437B (en) | 2006-11-20 | 2006-11-20 | Resistive random access memory (rram) and method for fabricating the same |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI318437B (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI496146B (en) * | 2011-09-23 | 2015-08-11 | Univ Nat Sun Yat Sen | Resistance random access memory (rram) structure having a silicon nitride insulation layer |
TWI501234B (en) * | 2011-09-23 | 2015-09-21 | Univ Nat Sun Yat Sen | Resistance random access memory (rram) structure having a silicon oxide insulation layer |
US9691979B2 (en) | 2014-04-02 | 2017-06-27 | Winbond Electronics Corp. | Resistive random access memory and method of fabricating the same |
US9847478B2 (en) | 2012-03-09 | 2017-12-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and apparatus for resistive random access memory (RRAM) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104465986B (en) * | 2013-09-17 | 2017-12-05 | 华邦电子股份有限公司 | Resistance-type memory and its manufacture method |
TWI508340B (en) * | 2013-11-05 | 2015-11-11 | Winbond Electronics Corp | Resistive random access memory and method of manufacture thereof |
CN104733608B (en) * | 2013-12-18 | 2017-06-09 | 华邦电子股份有限公司 | Resistance-type memory and its manufacture method |
TWI605622B (en) | 2016-04-27 | 2017-11-11 | 國立中山大學 | Resistance random access memory |
TWI722797B (en) * | 2020-02-17 | 2021-03-21 | 財團法人工業技術研究院 | Computation operator in memory and operation method thereof |
TWI824516B (en) * | 2021-05-12 | 2023-12-01 | 美商特憶智能科技公司 | Resistive random-access memory devices with multicomponent electrodes and discontinuous interface layers |
-
2006
- 2006-11-20 TW TW95142795A patent/TWI318437B/en not_active IP Right Cessation
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI496146B (en) * | 2011-09-23 | 2015-08-11 | Univ Nat Sun Yat Sen | Resistance random access memory (rram) structure having a silicon nitride insulation layer |
TWI501234B (en) * | 2011-09-23 | 2015-09-21 | Univ Nat Sun Yat Sen | Resistance random access memory (rram) structure having a silicon oxide insulation layer |
US9847478B2 (en) | 2012-03-09 | 2017-12-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and apparatus for resistive random access memory (RRAM) |
US10283702B2 (en) | 2012-03-09 | 2019-05-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods for resistive random access memory (RRAM) |
US9691979B2 (en) | 2014-04-02 | 2017-06-27 | Winbond Electronics Corp. | Resistive random access memory and method of fabricating the same |
Also Published As
Publication number | Publication date |
---|---|
TW200824046A (en) | 2008-06-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI318437B (en) | Resistive random access memory (rram) and method for fabricating the same | |
TWI340388B (en) | Resistive memory devices including selected reference memory cells | |
EP2052389A4 (en) | Solid state storage element and method | |
EP2071468A4 (en) | Memory control device, memory device, and memory control method | |
EP2099072A4 (en) | Resistance change element and method for manufacturing the same | |
TWI366893B (en) | Non-volatile memory device and method for manufacturing the same | |
TWI351178B (en) | Capacitor array, capacitor and capacitor array layout method | |
EP2136398A4 (en) | Semiconductor memory device and method for manufacturing the same | |
EP2074853A4 (en) | Random access method and signalling method for the same | |
TWI348162B (en) | Memory cell structure and method of manufacturing the same, and mram cell structure | |
EP2075706A4 (en) | Memory device and refresh adjusting method | |
TWI368313B (en) | Resistive memory cell fabrication methods and devices | |
EP2096648A4 (en) | Conductive film and method for manufacturing the same | |
TWI369612B (en) | Storage device and storage device access control method | |
EP2219221A4 (en) | Nonvolatile storage device and method for manufacturing the same | |
TWI348701B (en) | Semiconductor memory and method for testing the same | |
EP2169558A4 (en) | Memory refresh device and memory refresh method | |
GB2427721B (en) | System and method for communicating with memory devices | |
EP2075703A4 (en) | Memory control circuit, method, and integrated circuit | |
TWI349942B (en) | Multi-port memory device | |
TWI367486B (en) | Memory device and refresh method thereof | |
EP2084745A4 (en) | Device, and method for manufacturing the same | |
EP1864223A4 (en) | Storage device, memory managing apparatus, memory managing method, and program | |
TWI318470B (en) | Phase change memory device and method of fabricating the same | |
EP2076924A4 (en) | Memory element and method for manufacturing the same, and semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |