TWI312586B - Method and apparatus for an led light engine - Google Patents

Method and apparatus for an led light engine Download PDF

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Publication number
TWI312586B
TWI312586B TW95114218A TW95114218A TWI312586B TW I312586 B TWI312586 B TW I312586B TW 95114218 A TW95114218 A TW 95114218A TW 95114218 A TW95114218 A TW 95114218A TW I312586 B TWI312586 B TW I312586B
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Taiwan
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light
emitting diode
thermally conductive
emitting
conductive substrate
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TW95114218A
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Chinese (zh)
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TW200640047A (en
Inventor
Der Jeou Chou
Daniel Nelson
Thomas Kulaga
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Enertron Inc
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Priority claimed from US11/112,918 external-priority patent/US7431477B2/en
Application filed by Enertron Inc filed Critical Enertron Inc
Publication of TW200640047A publication Critical patent/TW200640047A/en
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Publication of TWI312586B publication Critical patent/TWI312586B/en

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Description

1312586 九、發明說明: 【發明所屬之技術領域】 本發明係關於照明產品,尤指加設發光二極體(led) 之光引擎。 【先前技術】1312586 IX. Description of the invention: [Technical field to which the invention pertains] The present invention relates to an illumination product, and more particularly to a light engine in which a light-emitting diode (LED) is added. [Prior Art]

發光二極體(led)在需要較低能量指示燈、數 等應用方面,已使用數十年。然而,近年來,個 H 體的亮度和功率已有實質上增進,以致可得丨瓦‘ 5 = 裝置。 、 與?統照明產品她,發光二極體糾、,卻顯示高 和使用奇命。例如,典型的白熾燈泡有每瓦特1〇—12户 效能,持續約麵至2〇〇M、時,一般的瑩光燈泡效^ J 瓦特40 —80流明,持續約10000至2〇〇〇〇小時;血 二 燈泡效力為20流明,持續2000至3000小時。相1 發光二極體可發射每瓦特55流明,使用壽命約刚〇〇〇= 時。 ’ J、 /雖然,近來發光二極體效率進步’確^能量劇省 知系統無法利用發光二極體所需特性,並製造 =有=用標準照明產品’此主要是由於現= 巧如’商業用高功率發光二極體裝置發生巨量敎 i達成可靠性和長壽,重點在保持發光二極體 精簡方式加以組合,又能維持必要的熱傳送特丨^一極如 於進以某些塗佈形式保護發光二極體晶粒,但使用 :成(尤其是大規模組合)引起的熱應力ί 站成j斷線、破裂晶粒焊墊,及其他可靠性問題。 會 再者’亟需加設多數彩色發光二極體,製成白光,即使 如2586 發光二極體裝置密切靠近組合(又受到熱傳送考慮的限 二 此系統產生的光未充分混合,以致各色呈不均勻斑點, : f勻投射自光。同理’現時生產複合半導體發光1極體顏 色,不能有效生成某一波長(例如575 nm黃光)。紅 ^ 色發光'一極體光的有效混合是較佳措施。 〆Light-emitting diodes (LEDs) have been used for decades in applications that require lower energy indicators, numbers, and the like. However, in recent years, the brightness and power of a H-body have been substantially increased, so that the ‘ 5 ' device can be obtained. With her lighting products, she is illuminating the LEDs, but it shows high and uses strange life. For example, a typical incandescent bulb has a capacity of 1 to 12 per watt, and lasts for about 2 〇〇M. When the average fluorescent bulb is effective, it is 40-80 lumens, lasting about 10,000 to 2 inches. Hours; blood two bulbs have a potency of 20 lumens for 2000 to 3000 hours. Phase 1 LEDs emit 55 lumens per watt and have a lifetime of approximately 〇〇〇 =. 'J, /, although the efficiency of the recent light-emitting diodes has improved', it is impossible to use the characteristics required of the light-emitting diodes, and manufacture = have = use standard lighting products 'this is mainly due to the current = smart as ' Commercial high-power LED devices have a huge amount of 敎i to achieve reliability and longevity, with a focus on keeping the LEDs in a streamlined way, while maintaining the necessary heat transfer characteristics. The coating form protects the light-emitting diode grains, but uses: thermal stress caused by (especially large-scale combination), standing as j broken wires, broken grain pads, and other reliability problems. In addition, there is no need to add most color light-emitting diodes to make white light, even if the 2586 light-emitting diode device is in close proximity to the combination (which is subject to heat transfer considerations. The light generated by this system is not fully mixed, so that the colors are different. It is unevenly distributed, : f is evenly projected from light. Similarly, the current production of composite semiconductor light-emitting diode body color can not effectively generate a certain wavelength (for example, 575 nm yellow light). Red color light emission is effective for one-pole light. Mixing is the preferred measure.

因此,需有發光二極體光引擎裝置以克服先前技蓺 述及其他限制。 K 【發明内容】 - 一般而言,本發明提供一種新穎的板上多晶片 鲁 (MCOB)光引擎,包括高度熱傳導性基板,以機械方式連 接於基板之複數發光二極體(LED)半導體裝置,固定於基 板並包圍至少一部份該發光二極體裝置之外護堤,以及設^ 在發光二極體裝置上並受到外護堤拘限之實質上透明聚合性 封裝膠(例如光學級聚矽氧)。 ° 按照本發明之一具體例,高度熱傳導性基板包括包覆金 屬層之印刷電路板(PCB)。 按照本發明諸具體例,發光二極體裝置係在電氣上構成 串聯、並聯,或其組合方式。 ' 按照本發明變通具體例,光引擎含反射器(例如一般圓 • 錐形反射器)’固定於基板,以形成外護堤。 按照本發明又一具體例,光學組件(例如透鏡、濾光鏡 等)’以光學方式耦合於設在發光二極體裝置上的聚合性封裝 膠。 以此方式,本發明提供高效率發光二極體光引擎,適合 廣泛照明應用。 【實施方式】 參照附圖詳述,即可更完整暸解本發明,圖上相同參照 號碼指相似元件。 以下所述僅為本發明具體例,絲毫無意限制本發明範 6 1312586 圍、用途或造型。下述只為提供適當說明實施本發明各種具 體例。顯然’此等具體例所述元件之功用和配置可有各種變 化,不違本發明範圍。 一般而言,本發明發光二極體光引擎包括高度熱傳導性 基板(例如包覆金屬層之印刷電路板);複數發光二極體 (LED)半導體裝置’以機械方式連接於基板;外護堤,固定於 基板並包圍至少一部份(最好是全部)發光二極體裝置;以 及實質上透明聚合性封裝膠(例如光學級聚秒氧),設在複數 發光二極體襄置上,受到外護堤所拘束。在一具體例中,光 引擎包含反射器(例如一般為圓錐形反射器),固定於基板, 以形成外護堤,有助於引導和聚焦光和/或由具有不同顏色 的一或以上發光二極體裝置混合光。在其他具體例中(詳 後)’係將一或以上光學組件,諸如濾光器、透鏡等,固定於 封裝膠塗膜。 ' 發光二極艚j蛊;^ ,首先參見第1目,赫可朗於本發明之電氣拓樸例, 光引擎1〇0包含複數發光二極體裝置104 (在此具體例中, 為表面女裝的發光二極體晶片)’連接於高膚埶值宴枓其妬Therefore, a light emitting diode light engine device is needed to overcome the prior art and other limitations. K SUMMARY OF THE INVENTION - In general, the present invention provides a novel on-board multi-wafer (MCOB) light engine comprising a highly thermally conductive substrate, a plurality of light emitting diode (LED) semiconductor devices mechanically coupled to the substrate a substantially transparent polymerizable encapsulant (for example, an optical grade) fixed to the substrate and surrounding at least a portion of the bezel outside the light emitting diode device, and disposed on the light emitting diode device and surrounded by the outer berm Polyoxane). According to one embodiment of the invention, the highly thermally conductive substrate comprises a printed circuit board (PCB) overlying the metal layer. In accordance with specific embodiments of the present invention, the light emitting diode devices are electrically connected in series, in parallel, or a combination thereof. According to a variant of the invention, a light engine comprising a reflector (e.g. a generally circular cone reflector) is fixed to the substrate to form an outer berm. In accordance with yet another embodiment of the present invention, optical components (e.g., lenses, filters, etc.) are optically coupled to a polymeric encapsulant disposed on a light emitting diode device. In this manner, the present invention provides a high efficiency light emitting diode light engine suitable for a wide range of lighting applications. DETAILED DESCRIPTION OF THE INVENTION The present invention will be more fully understood by reference to the appended claims. The following description is only a specific example of the invention, and is not intended to limit the scope, use or styling of the invention. The following is a description of various specific embodiments of the invention. It will be apparent that the functions and configurations of the elements described in the specific examples are subject to various modifications and are not in the scope of the invention. In general, the light-emitting diode light engine of the present invention comprises a highly thermally conductive substrate (for example, a printed circuit board coated with a metal layer); a plurality of light-emitting diode (LED) semiconductor devices are mechanically connected to the substrate; the outer berm Fixing on the substrate and surrounding at least a portion (preferably all) of the light emitting diode device; and substantially transparent polymerizable encapsulant (for example, optical grade polysecond oxygen) disposed on the plurality of light emitting diode devices, Restricted by the outer berm. In one embodiment, the light engine includes a reflector (eg, a generally conical reflector) that is affixed to the substrate to form an outer berm to aid in guiding and focusing the light and/or from one or more of the colors having different colors. The diode device mixes light. In other specific examples (detailed), one or more optical components, such as filters, lenses, etc., are attached to the encapsulant film. ' 发光 二 蛊 蛊 ^ ^ ^ ^ 首先 首先 首先 首先 首先 首先 首先 首先 首先 首先 首先 首先 首先 首先 首先 首先 首先 首先 首先 首先 首先 首先 首先 首先 首先 首先 首先 首先 首先 首先 首先 首先 首先 首先 首先 首先 首先 首先 首先 首先 首先 首先 首先Women's light-emitting diode chip) 'connected to the high skin value banquet

行七行,各含五個串聯發光二極體裝置,本身跨越 1312586 電極10M口 110並聯。另外,暫且 極體裝置104 (在此具體例中, 兄弟3圖,複數發光二 110和108串聯。 9個焊線晶片)與電極 一般而言,儘管有上述圖示具 、 成任何適當電氣拓樸(串聯、並 本發明涵蓋使用構 光二極體裝置,以及任何適當的^何3組^任何數量發 極體裝置可部署在複數區,各此外,發光二 裝置内加設的發光三極體裝置1(^ 數目。 計變數選擇,例如包含電源性f (A ’^照許多設 電壓、可用功率等)、發光二極體mu、可用dc 壓⑽、功率額定值等)、所需質(例=向電 性質(例如熱傳導性、幾何形妝箸^ 土板102 條件。 I戍订形狀等),以及應用性質和外部熱 -搞體例内,發光二極體裝置係串聯或並聯,使發光Seven rows, each containing five series-connected LED devices, themselves span 1312586 electrodes 10M port 110 in parallel. In addition, the polar body device 104 (in this specific example, the brother 3 map, the complex light-emitting diodes 110 and 108 are connected in series. 9 wire-bonding wafers) and the electrodes are generally provided with any suitable electrical extension. Park (series, and the present invention contemplates the use of a light-emitting diode device, and any suitable group of any number of emitter devices that can be deployed in a plurality of regions, each additionally providing a light-emitting triode within the light-emitting device Device 1 (^ number. The number of gauges is selected, for example, including power supply f (A '^ many voltages, available power, etc.), light-emitting diode mu, available dc pressure (10), power rating, etc.), required quality (Example = electric properties (such as thermal conductivity, geometric makeup, earth plate 102 conditions, I shape, etc.), as well as application properties and external heat - in the case of light-emitting diode devices in series or in parallel, so that Illuminate

ΐϊΓϋ的整體組合順向電壓,配合電氣輸人。例如在 ^國和加旱大家庭_上,12G VAC J 162V DC 〇 40 ’視個別發光二極體的Vf而定,取得i62v整流% 眾所知’典型的紅色和琥%色發光二極體裝置有 = 約1.8至2.5V,而綠色和藍色發光二極體有標稱vf _ ·至4.5V。在較低電壓應用,諸如12V DC或24V DC 二榀U’a以達所需光輸出及配合輸入電壓,可能需要將發光 二=體晶片構成並聯及串聯,在美國及加拿大以外,多數國 二,用電源為220V或230V,因此需要80至160發光二極 體晶^串翻配合經整流DC。 化,令組合順向電壓配合輸入源電壓,可將光引擎的供電簡 ’故無龐大複雜的電壓步升或步降變壓器,或系統需要之 1312586 有簡單有效的AC i DC I流電路即夠。如此可 f引擎加人精巧組柄’例如套人標準燈餘座之燈泡組The overall combination of the forward voltage is matched with the electrical input. For example, in the country and the family of the drought, 12G VAC J 162V DC 〇40 'depends on the Vf of the individual light-emitting diodes, the i62v rectification % is known. 'Typical red and amber % LEDs The device has = about 1.8 to 2.5V, while the green and blue LEDs have a nominal vf _ · to 4.5V. In lower voltage applications, such as 12V DC or 24V DC binary U'a to achieve the desired light output and match the input voltage, it may be necessary to combine the two-body wafers in parallel and in series, in the United States and Canada, most countries The power supply is 220V or 230V, so it is necessary to use 80 to 160 light-emitting diode crystals to match the rectified DC. The combination of the forward voltage and the input source voltage can simplify the power supply of the light engine. Therefore, there is no complicated voltage step-up or step-down transformer, or the system needs 1312586. A simple and effective AC i DC I flow circuit is enough. . So the f engine can add a delicate group handle, such as a lamp set with a set of standard lamp rests.

S^ESSZZ ,何適當類別的發光二極體裝置顺都可用於本發明, 匕3個別晶粒、晶片級封裝、習用封裝、表面安裝 ’或目前已知或未來開發中的任何其他發光二極^裝 ^。例如在第1圖所示具體例中,發光二極體裝置刚包括 表面安裝裝置,有電_點,直接安裝於尋跡_ 之表 面,例如覆晶或焊碰晶粒。 辦曰ft%參見第2圖,發光二極體裝置可包括發光二極 ,曰曰片204焊接(經由焊線連結、環氧樹脂連結等)於個 印刷電路板焊墊206,其中各晶粒2〇4有至少二谭塾,以 ,由焊線連結202提供電氣連接。視需要可用中間印刷電路 ίΓΐ f08 ’以促進個別晶粒間之焊線連結。此具體例顯示 、且、'聯之七個串聯晶粒;然而,如上所述,本發明不限於 此,可包含任何數量晶粒、串聯、並聯或其組合。 、 第5圖表示第2圖所示單發光二極體裝置之透視剖開 圖。如圖所示,基板1〇2包括高度熱傳生基底5〇4,上覆 兩度熱傳_電氣絕緣材料5〇2,個別印刷電路板尋跡2〇8 和206設在層502上,而發光二極體晶粒2〇4連結於印刷 板尋跡206。焊線(圖上未示)用來使晶粒2()4與相鄰晶 粒相連(例如使用中間印刷電路板尋跡2〇8)。 第4圖表示本發明又一具體例,按照此設計,個別發光 二極體晶粒204焊接(經由焊線連結或其他導電性連結)於 印刷電路板焊墊206。個別焊線202再用來把印刷電路板焊 墊206 $接於相鄰晶粒上之連結區。即各發光二極體晶粒 204包含單一焊墊,而晶粒背面做為第二電氣觸點。 發光二極體裝置1〇4係使用一或以上適當半導體材料製 1312586 造,包含例如礙珅化鎵(GaAsP)、磷化鎵(GaP)、坤化銘鎵 (AlGaAs)、磷化鋁銦鎵(A1GaInP)、氮化銦鎵(ΜηΝ) 等。所選用發光二極體裝置104大小可用各種設計參數決 定。在一具體例中,發光二極體裝置1〇4係3〇〇x3〇〇微米四 方晶粒,厚度約1〇〇微米。凡精於此道之士均知本發明不限 於此。 '正如技術上已知,個別發光二極體裝置有特別顏色,相 當於特殊波長(或頻率)。本發明之一要旨係使用各種顏色的 複數發光二極體以製成發射光所需顏色之能力。一般而言, 安裝在基板上的發光二極體裝置群組,包含χ紅色發光二極 體、y綠色發光二極體、ζ藍色發光二極體,其中選用χ: y : ζ比’以達成白光特別相關的色溫(CCT)。 一般而s,可以任何所需比使用任何數目的發光二極體 顏色。典型的白熾燈泡產生CCT為2700 κ的光(溫暖白 光),而螢光燈泡產生CCT約5000 Κ的光。因此,典型上需 要更多紅色和黃色發光二極體達成2700 Κ的光,而必須有更 多藍色發光二極體以達成5〇〇〇 Κ光。為達成高度顏色表現指 數(CRI) ’光源必須射出光譜幾乎涵蓋可見光全程(38〇nm至 770 nm波長)之白光,使深紅、淡紅、號珀、淡綠、深綠、 淡藍、深藍,均可混合。 本發明使不同波長的發光二極體裝置可加設在光引擎 内’以達成此等目標。在一具體例中’例如叫62〇 nm): Y(590 nm) : G(525 nm) : B(465 nm)混合比(相對於發光二極 體數量)為6 : 2 : 5 : 1,可達成3200 K光。按照另一具體 例,使用R : Y : G : B混合比7 : 3 : 7 : 2達成3900 K光。 又一具體例使用10 : 3 : 10 : 4之比達成5000 K光。此三具 體例各光譜如第11圖所示。 須知所述混合比視晶片的強度及其波長而定。因此,本 發明不限於可用來建構所需燈輸出的發光二極體類型數目。 1312586 的顏〗可用來製造特定顏色的光’使用類似 即雖然通常可用許多單色發光二極體來 產ίΐ*顏色,在若干情況下f使用二種或以上顏色的發光 二極體,組合形成複合色。 赞九 宜此’由於發光二極體化合半導體的材料性能, 二長的效力m咖’無傳統化合物半導體材料可有 「,射在575 rnn的黃光。此波長575腕位於Α1(Μηρ和 GalnN半導體_效能谷底。然而,把此 二極體裝置混合,即可製成有所纽力的黃光。 先 基板 、 基板102包括可提供發光二極體裝置1〇4機械性支持之 ^何結構’同時提供所需熱特性,即有助於發散發光二極體 裝置104發生的全部或吾附熱。在此方面,基板1〇 括高度熱傳導性基板。 此處所用「高聽料性基板」指有效熱傳導紐大於 1 W/°K-m之基板,以大於約3 w/〇K_m為佳。所以,基板 1〇2的幾何形和材料可視應用而異。在一具體例中,基板1〇2 包括包覆金屬層印刷電路板,例如Thermagon T-Lam或 Bergquist Thermal Clad基板。此等包覆金屬層印刷電路板可 用習知FR-4印刷電路板製法製作,所以較具成本有效性。 其他適當基板包含各種混雜陶質基板,以及陶質搪堯屬 板。此外,在基板上制白色光罩,以及將尋跡電路鍍^ 即可增進基板的反光。 封裝勝層 實貝_L透明的聚合性封裝踢,宜設置在發光二極體裝置 上,再適當處理,以提供保護層。在較佳具體例中,封裝膠 包括光學級聚矽氧。可選用封裝膠的性能,以達成其他光^ 性能,例如把發光二極體裝置產生的光過濾。同時,'此封裝 膠保護層柔軟到足夠耐受組成會遭受到的熱游逸,不會使晶 11 1312586 • 粒、焊線和其他组件產生應力疲勞。 、―第f、_7A和7B圖表示本發明一具體例之各面圖,其中 涵蓋?光二^體裝置的封襄膠適當受到護堤結構的拘束。更 ^體言之’第6圖之光引擎100包括外護堤602,包圍發光 ^極體晶粒204至少—部份。在較佳具體例中,護堤6〇2 一 為ί方形:方形、六角形、圓形、八角形,或橢圓形結 構,〇圍發光二極體晶粒2〇4之整個陣列。外護堤6〇2使用 枯膠或其他所需枯結方法,適H结於基板脱。以光學理 由言’最好是圓形護堤。 所示,封裝膠材料宜覆蓋在發光二極體晶粒204 Λ Λ’ ί八充填於外護堤6〇2所界定容積,參見第7B圖所示 -斷面,封装膠材料6〇6充填於外護堤6〇2頂面。此外, 最好由實質上賴材觀成,勤1透_膠材料 (像1¼酸S旨)。透明可容許繞光引擎邊緣發射光。 # -2?體:中’第二護堤即内護堤604設置在接近發 斜心。内護堤6〇4功用在於拘束封裝 =j明材料為佳。内護堤604的存在, 加以連接。 反射環 πίίΐ具=中」光引擎包含反射環,實質上包圍發光 ίΐί 3統所產生光之聚焦和/或指向。 1Ω9 止圖’反射器802之例適於枯結在光引擎的基板 且㈣丨光體晶粒204全部位於反射器基部。在圖示 二ΐΓ 呈錐形。然而,可知反射器802 了為拋物線形n或其他任何 反射器802藉拘束封裝膠而作為外護堤J幻如園所不 8〇2設計來引導和4發光二極體晶粒204 性。在此方面,反射g觀宜且古,和材料需具南度反射 射器 且具有—般綺、磨亮、鏡般内 12 1312586 面 實質上白光(或其他特定色)為標的之應用上,而 且吏一色或以上的發光二極體組合產生該色時,最好 内面有擴散發光二歸裝置產生之光的作用,以提Ξ 最^圭的^員色混合,即使光引擎的效率或焦點可能稍微降低 射之故)。因此,使用二色或以上發光二極體顏色 =用2,反射器8〇2内面宜透過適當方法和適t ,二反射器802可刻面、喷砂、化學方式粗趟化, 式粗糖化’以提供所需擴散系數。此外,組織或 刻面可隨機、規則性、推計,或其組合。 飞乂 其他糸學細件 按照本發明又一具體例,在封裴膠表面 二減裝置發射的光具有所需光學效果 有保護性表面的作用。適當光學組件包 (ftesnel)箄)1(H、凸面、平面、「泡狀」、菲涅耳 笛」/)’和各種滤光鏡(偏光鏡、濾、色鏡等)。 圖、圖表示本發明—具體例的光引擎俯視 側包’與封裝膠606界面’而氣泡 ^ 4。在圖不具體例内,泡狀透鏡1〇〇2 ϋΐί 柵格。本發明構想任何數目和大小之該項 結論 的發提供—種新穎、高效率、基板上多晶片 想上==擎例:用或未來開發中任何設 燈^厂車輛具用之途用(途束=,式燈泡、榮光燈泡、齒素 & (車尾燈、車刚燈、閃燈等)、活動照明 13 1312586S^ESSZZ, any suitable type of light-emitting diode device can be used in the present invention, 个别3 individual die, wafer level package, conventional package, surface mount 'or any other light-emitting diode currently known or developed in the future ^Install ^. For example, in the specific example shown in Fig. 1, the light-emitting diode device has just included a surface mounting device, and has a power point, which is directly mounted on the surface of the tracking_, such as a flip chip or a solder bump. Referring to Figure 2, the LED device can include a light-emitting diode, and the die 204 is soldered (via wire bonding, epoxy bonding, etc.) to a printed circuit board pad 206, wherein each die 2〇4 has at least two Tan 塾, to provide electrical connection by wire bond 202. An intermediate printed circuit ίΓΐ f08 ' can be used as needed to facilitate wire bonding between individual dies. This specific example shows, and is combined with seven series of crystal grains; however, as described above, the present invention is not limited thereto and may include any number of crystal grains, series, parallel, or a combination thereof. Fig. 5 is a perspective sectional view showing the single light emitting diode device shown in Fig. 2. As shown, the substrate 1〇2 includes a highly thermally-transferred substrate 5〇4, overlying two degrees of heat transfer _ electrical insulating material 5〇2, and individual printed circuit board traces 2〇8 and 206 are disposed on layer 502. The light-emitting diode die 2〇4 is connected to the printed board trace 206. Solder wires (not shown) are used to connect the die 2() 4 to adjacent crystals (e.g., using intermediate printed circuit board traces 2〇8). Fig. 4 shows still another embodiment of the present invention. According to this design, the individual light emitting diode dies 204 are soldered (via wire bonding or other conductive bonding) to the printed circuit board pads 206. The individual bonding wires 202 are then used to connect the printed circuit board pads 206 to the bonding regions on adjacent dies. That is, each of the light emitting diode dies 204 includes a single pad and the back side of the die serves as a second electrical contact. The light-emitting diode device 1〇4 is made of one or more suitable semiconductor materials, including 1312586, including, for example, gallium germanium (GaAsP), gallium phosphide (GaP), luminal gallium (AlGaAs), and aluminum indium phosphide. (A1GaInP), indium gallium nitride (ΜηΝ), and the like. The size of the selected light-emitting diode device 104 can be determined by various design parameters. In one embodiment, the light-emitting diode device 1〇4 is a 3〇〇x3〇〇 micron square grain having a thickness of about 1 μm. Those skilled in the art know that the invention is not limited thereto. 'As is known in the art, individual light-emitting diode devices have a special color that is equivalent to a particular wavelength (or frequency). One of the gist of the present invention is to use a complex light emitting diode of various colors to produce the desired color of the emitted light. Generally, a group of light-emitting diode devices mounted on a substrate includes a crimson light emitting diode, a y green light emitting diode, and an indigo blue light emitting diode, wherein χ: y : ζ ratio ' A color temperature (CCT) that is particularly relevant to white light is achieved. In general, s can be used in any desired ratio than any number of LED colors. A typical incandescent bulb produces a CCT of 2700 κ (warm white light), while a fluorescent bulb produces a CCT of about 5000 Κ. Therefore, more red and yellow LEDs are typically required to achieve 2700 光 of light, and more blue LEDs must be used to achieve 5 Κ Κ. In order to achieve a high color performance index (CRI), the light source must emit white light that covers almost the entire range of visible light (38 〇 nm to 770 nm), making dark red, light red, horn, light green, dark green, light blue, dark blue, Can be mixed. The present invention enables light-emitting diode devices of different wavelengths to be added to the light engine to achieve such goals. In a specific example 'for example, 62〇nm): Y(590 nm) : G(525 nm) : B(465 nm) mixing ratio (relative to the number of light-emitting diodes) is 6 : 2 : 5 : 1, A 3200 K light can be achieved. According to another specific example, a R:Y:G:B mixing ratio of 7:3:7:2 is used to achieve 3900 K light. Another specific example achieves 5000 K light using a ratio of 10:3:10:4. The spectra of these three systems are shown in Figure 11. It should be noted that the mixing ratio depends on the strength of the wafer and its wavelength. Thus, the invention is not limited to the number of types of light-emitting diodes that can be used to construct the desired lamp output. The color of 1312586 can be used to make light of a specific color. 'Use similarly, although many monochromatic light-emitting diodes can usually be used to produce ΐ ΐ color, in some cases f use two or more colors of light-emitting diodes, combined to form Composite color. Thanks to this, due to the material properties of the light-emitting diode-fused semiconductor, the long-term effectiveness of the m-square-free conventional compound semiconductor material can be ", shot at 575 rnn yellow light. This wavelength 575 wrist is located at Α1 (Μηρ and GalnN) The semiconductor_performance valley. However, by mixing the two-pole device, a yellow light with a strong force can be produced. The first substrate and the substrate 102 include a structure capable of providing mechanical support of the light-emitting diode device 1〇4. 'Providing the required thermal characteristics at the same time, which helps to dissipate all or any of the heat generated by the light-emitting diode device 104. In this respect, the substrate 1 includes a highly thermally conductive substrate. The "high-hearing substrate" used herein. It refers to a substrate with an effective heat conduction kinthage greater than 1 W/°Km, preferably greater than about 3 w/〇K_m. Therefore, the geometry and material of the substrate 1 〇 2 may vary depending on the application. In a specific example, the substrate 1 〇 2 Including coated metal layer printed circuit boards, such as Thermagon T-Lam or Bergquist Thermal Clad substrates. These coated metal layer printed circuit boards can be fabricated using the conventional FR-4 printed circuit board method, so they are more cost effective. base It contains a variety of mixed ceramic substrates, as well as ceramic enamel boards. In addition, a white reticle on the substrate and plating of the tracing circuit can enhance the reflection of the substrate. The package kick should be disposed on the LED device and then properly treated to provide a protective layer. In a preferred embodiment, the encapsulant comprises an optical grade polyfluorene. The performance of the encapsulant can be selected to achieve other light. Performance, such as filtering the light produced by the LED device. At the same time, 'this encapsulant protective layer is soft enough to withstand the thermal runaway that the composition will suffer, without the crystal 11 1312586 • Grains, wire bonds and other components Stress fatigue occurs. The "f, _7A, and 7B diagrams show various aspects of a specific example of the present invention, in which the sealant covering the optical device is appropriately restrained by the structure of the berm. The light engine 100 of FIG. 6 includes an outer berm 602 surrounding at least a portion of the illuminating body die 204. In a preferred embodiment, the berm 6 〇 2 is a square: square, hexagonal, circular, Octagonal, or elliptical structure The entire array of diode grains 2〇4. The outer berm 6〇2 uses a dead gel or other required dry method, and the H is attached to the substrate. For optical reasons, it is better to have a circular berm. It should be noted that the encapsulant material should be covered in the light-emitting diode die 204 Λ Λ 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八The outer berm has a top surface of 6〇2. In addition, it is best to be made of a material that is substantially sturdy, and is transparent to the material (like 11⁄4 acid S). The transparency allows light to be emitted around the edge of the light engine. # -2? The middle second berm, the inner berm 604, is placed close to the slanting center. The inner berm 6〇4 is useful for restraining the package=jming material. The inner berm 604 is present and connected. Reflection Ring πίίΐ=中中 The light engine contains a reflection ring that substantially surrounds the light and/or the direction of the light produced by the system. An example of a 1 Ω 9 stop diagram reflector 802 is suitable for squashing the substrate of the light engine and (iv) the phosphor dies 204 are all located at the base of the reflector. In the figure, the two sides are tapered. However, it can be seen that the reflector 802 is a parabolic n or any other reflector 802 that acts as an outer bezel and is designed to guide and illuminate the diode. In this respect, the reflection g is suitable and ancient, and the material needs to have a south reflector and has a general-like, polished, mirror-like 12 1312586 surface substantially white light (or other specific color) as the target application. Moreover, when the color is generated by the combination of the light-emitting diodes of one color or more, it is preferable that the inner surface has the function of the light generated by the diffused light-emitting device, so as to improve the efficiency of the light engine or the focus of the light engine. It may be slightly lower.) Therefore, the use of two or more light-emitting diode colors = 2, the inner surface of the reflector 8 〇 2 should be properly applied and suitable t, the second reflector 802 can be faceted, sandblasted, chemically roughened, coarse saccharification 'To provide the required diffusion coefficient. In addition, the organization or facet can be random, regular, inferential, or a combination thereof. Fly 乂 Other drop-off details According to still another embodiment of the present invention, the light emitted from the surface reduction device of the sealant has the desired optical effect and a protective surface. Appropriate optical package (ftesnel) 箄) 1 (H, convex, flat, "bubble", Fresnel flute" /) ' and various filters (polarizer, filter, color mirror, etc.). The figure and the figure show the light engine of the present invention, which is a view of the side of the light engine from the side of the encapsulant 606 and the bubble ^4. In the non-specific example, the lenticular lens 1〇〇2 ϋΐί grid. The present invention contemplates the provision of any number and size of the conclusions - a novel, high efficiency, multi-chip on the substrate, ================================================================= Beam =, type bulb, glory bulb, tooth & (taillights, car lights, flashing lights, etc.), activity lighting 13 1312586

圖為本發明另類具體例的光引擎俯視圖 焊線連結發光二極體晶片,由並聯和串聯構成, ’具有複數 其中發光二 極體晶片各含二焊墊; 第3圖為本發明另類具體例的光引擎俯視圖,具有複數 焊線連結發光二極體晶片,由串聯構成; 八 第4圖為本發明另類具體例的光引擎俯視圖,具有複數 知線連結發光一極體晶片,由並聯和串聯構成,其中發光二 極體晶片各含有單一焊墊; 第5圖為包括安裝在金屬護面高度熱傳導性印刷電路板 基板上的發光二極體之光引擎具體例透視剖面圖; 第6圖為包含内護堤和外護堤的光引擎透視綜合圖; 第7A和7B圖分別為包含外護堤和内護堤充塞封裝膠材 料之光引擎俯視圖和侧視圖; 第8圖為含有反射器和内護堤之光引擎透視綜合圖; 第9A和9B圖分別為第8圖所示光引擎之俯視圖和侧視 圖, 第10A、10B和10C圖分別為加設透鏡例之光引擎俯視 圖、斷面圖和透視圖; 第11圖為白光各種溫度的光譜曲線圖。 14 1312586 【主要元件符號說明】 100 光引擎 102 104 發光二極體裝置 106 108 V+電極 110 202 焊線連結 204 206 印刷電路板焊墊 208 502 高度熱傳導性電氣 504 絕緣材料 602 604 内護堤 606 802 反射器 1002 1004 凸面區 基板 尋跡形態 Vo電極 發光二極體晶粒 印刷電路板尋跡 高度熱傳導性基底 外護堤 封裝膠材料 泡狀透鏡 15The present invention is a top view of a light engine top view of a light-emitting diode-connected light-emitting diode wafer, which is composed of parallel and series, and has a plurality of light-emitting diode chips each having two pads; FIG. 3 is another specific example of the present invention. The top view of the light engine has a plurality of bonding wires connected to the LED chip, which are composed of a series; and FIG. 4 is a top view of a light engine according to another specific example of the present invention, having a plurality of wires connected to the light-emitting one-pole wafer, connected in parallel and in series The light emitting diode wafers each include a single solder pad; FIG. 5 is a perspective cross-sectional view of a light engine including a light emitting diode mounted on a metal protective surface highly thermally conductive printed circuit board substrate; A perspective view of a light engine including an inner berm and an outer berm; FIGS. 7A and 7B are a plan view and a side view, respectively, of a light engine including an outer berm and an inner berm to fill the encapsulant material; and FIG. 8 includes a reflector and A perspective view of the light engine of the inner berm; FIGS. 9A and 9B are respectively a top view and a side view of the light engine shown in FIG. 8, and FIGS. 10A, 10B and 10C are respectively an example of adding a lens. Engine plan view, a sectional view and a perspective view; spectral profile graph of FIG. 11 for various temperatures of white light. 14 1312586 [Description of main component symbols] 100 Light engine 102 104 LED device 106 108 V+ electrode 110 202 Wire bond 204 206 Printed circuit board pad 208 502 Highly thermally conductive electrical 504 Insulation material 602 604 Inner berm 606 802 Reflector 1002 1004 convex area substrate tracking form Vo electrode light emitting diode die printed circuit board tracking height thermal conductivity substrate outer berm wrap rubber material bubble lens 15

Claims (1)

1312586 、申請專利範圍1312586, the scope of patent application 97年12月19日修正 1·— 種發光裝置,包括: 熱傳導性基板; 複數發光二極體(LED)裝置,設置在熱傳導 人有丰ΪΪ二極體裝置係在第一和第二電極之間電氣搞ί,且 晶粒具和選自為發光裝置達成所需相!;之= 複數焊線,與複數半導體晶粒之焊墊相連; =膠’覆蓋在複數發光二極難置上方,侷限在外邊 二逸ίϊίΐΐ數焊線,且柔軟到可耐受熱傳導性基板的 ^散^及不會使發光二鋪裝置及ρ和第二電極產生應力疲 於㈣ΐ狀透鏡’絲於封歸上,缝透鏡具有平坦側連接 半面區’綠透鏡之各凸面區’相對應於複數 其中至少第一和第 其中至少第一和第 其中熱傳導性基板 又包含反射環,設 2. 如申請專利範圍第1項之發光裝置 二發光二極體裝置係電氣串聯者。 3. 如申請專利範圍第1項之發光裝置 二發光二極體裝置係電氣並聯者。 ^ 4.如申請專利範圍第1項之發光裝置 係包覆金屬層之印刷電路板者。 5·如申請專利範圍第1項之發光裝置 置在熱傳導性基板上者。 署,6·如申請專利範圍第1項之發光裝置,其中發光二極體! =係由選自包含磷砷化鎵(GaAsP)、磷化鎵(GaP)、砷化金 =UlGaAs)、鱗化銘銦鎵㈤GaInP)和氮化銦鎵((ΜηΝ 群組之半導體材料製成者。 7·—種發光裝置,包括: 熱傳導性基板; 16 1312586 電氣絕緣層,設置在熱傳導性基板上方; 方 複數印刷電路板(PCB)焊塾,覆蓋在電氣絕緣層上 悝故複數發光二極體(LED)裝置,設置在複數印刷電路板 人,發光二極體裝置係在第—和第二電極之間電氣搞 ^顏色^二極體裝置具有選自為發絲置達成所需相關色溫 性,可ϊϊί值Ιϊίί數發光二極體裝置上,封裝膠具柔軟 一和第」^ &amp; 土板之熱散逸,不會使發光二極體以及第 矛第一電極產生應力疲勞;以及 區,泡封裝膠上方’泡狀透鏡具有複數凸面 睛狀魏轉體純之一者。 熱傳導性基板; 電氣絕緣層,設置在熱傳導性基板上方; 複數發光二極體(LED)裝置,士几罢+ ;〆 方’各發光二極《㈣在第I氣=層上 色;體㈣具有選自為發光裝置達成所需相關色溫之顏 ΐ置在複數發光二極體裳置上;以及 膠者。&quot;疋’ b圍至少-部份發光二極體裳置,並侷限封裝 9.如申凊專利範圍第7項之發光梦罟甘 係包覆金屬層之印刷電路板者。、’、中熱傳導性基板 m如申睛專利範圍第7項之發光梦署 裱,設置在熱傳導性基板上者。、 &quot;,其中又包含反射 11.一種發光裝置,包括: 熱傳導性基板; 電氣絕緣層,設置在熱傳導性基板上方; 1312586 複數發光二極體(LED)裝置,設置在電氣絕緣層上, 各發光二極體裝置係在第-和第二電極之間電氣輕合,各發光 二極體裝置具有選自為發絲置達成所需相關色溫之顏色; 封裝膠,設置在複數發光二極體裝置上;以及 光學濾、波器,設置在封裝膠上方者。 I2.如申請糊細第n項之發紋置,其中發光二極體 裝置係由選自包含磷砷化鎵(GaAsP)、磷化鎵(Gap)、砷化 )、璘化㈣鎵(A1GaInP )和氮化錮鎵 (GalnN)群組之半導體材料製成者。 13.—種發光裝置,包括: 熱傳導性基板; 電氣絕緣層,設置在熱傳導性基板上方; 夂恭丄複ίΪ光二極體(LED)裝置’設置在電氣絕緣層上, 在第一和第二電極之間電氣耗合,並含有 料體日日粒’設置在物電路板(pCB) _ 晶粒具有焊墊; 分干等體 複數焊線,把發光二極體裝置相連;以及 封裝膠,設置在複數發光二極體裝置上,以及 〇圍至少一部份發光二極體裝置,並侷限封裝膠; 疋 封裝膠波封複數焊線,且具柔軟性,可^受埶傳導 不會使發光二極體裝置以及第-和第二電極產: 體f1置㈣13項之發光裝置’其中各發光二極 體裝置/、麵自為發錄置達成所需細色溫之顏色者。 wi5.如申料·15第13項之發光裝置,其作傳導神其 板係包覆金屬層之印刷電路板者。 傳導性基 外罢!^中請專利範圍第13項之發光裝置,又包括反射環, 设置在熱料性基板上者。 17.如申請專利範圍第13項之發光裝置,其中一或以上之 18 1312586 光學透鏡,設置在封裝膠上方者。 18. 如申請專利細第17項之發絲置,其巾光學透鏡之 形狀,選自包含凸面、凹面、平面、泡狀和菲淫耳(&amp;刪 群組者。 19. 如申請補翻第13項之發光裝置, 器,設置在封裝膠上方者。 Μ 20. 如申請專利範圍第13項之發光裝置,其中發光二極體 裝置係由選自包含磷坤化鎵(GaAsP)、填化嫁(Gap)、石申化 、磷化紹姻鎵(A1GaInP)和氮化銦鎵 (GalnN)群組之半導體材料製成者。 21. —種發光裝置之製法,包括: 提供熱傳導性基板; 在熱傳導性基板上方,設置電氣絕緣層; 在電氣絕緣層上設置複數發光二極體(LED)裝置,各 發光-極體裝置係在第—和第二電極之間電氣麵合; f複數發光二極體裝置上設置封裝膠;以及 封裝膠Ϊ供外護堤,包鼓少—部份發光三極雜置,並侷限 置且2有2ΐ白申Γίίί圍第21項之製法’其中各發光二極體裝 置八有k自為發光裝置達成所需相關色溫之顏色者。 係由,圍* 21項之製法,其中發光二極體裝置 „ 鎵(GaASP)、嶙化鎵(Gap)、神化銘鎵 組之半導體材料製成者。 ^ 發光二極體法’其中至少第-和第二 奴妓•撕性基板係 26.如申請專利範圍第u項之装置,其中至少第一和第二 19 1312586 發光二極體裝置係電氣串聯或並聯者。 27. 如申請專利範圍第n項之裝置,其中熱傳導性基 包覆金屬層之印刷電路板者。 糸 28. 如申請專利翻第丨〗項之裝置,其中各發光二極 置具有選自為發光裝置達成所需顏色之顏色者。 、 如申請專利範圍第n項之裝置,其中各發光二極 置/、有選自為發光裝置達成所需相關色溫之顏色者。 a 30.如申請專利範圍第n項之裝置,其中又 設置在熱料性基板上者。 錢射 如申請專利範11第11項之裝置’其中光學滤波器之形 狀丄达自包含凸面、凹面、平面、泡狀和菲涅耳(fresne ▲ 組者。 外 32. 一種發光裝置之製法,包括: 提供熱傳導性基板; 在熱傳導性基板上方設置電氣絕緣層; 在電氣絕緣層上方設置複數印刷電路板(PCB)焊墊; 在複數印刷電路板焊墊上設置複數發光二極體(LED’ ,二二f發光二極體裝置係在第一和第二電極之間電氣輕合, f發^鋪裝置具有選自為發絲置達成所需相關色溫之顏 在複數發光二極體裝置上方安裝泡狀透鏡,泡狀透鏡具 有稷數凸面區,泡狀透鏡之各凸面區相對應於複數半導體晶 之一者。 33. 如申請專利範圍帛%項之製法’其中鋪導性基板包 括包覆金屬層之印刷電路板者。 34. ,申請專利範圍第32項之製法,⑨含在複數發光二極 體裝置上方覆蓋封裝膠,封裝膠包括光學級聚砍氧者。 y 35.如申凊專利範圍第32項之製法,其中發光二極體裝置 係由選自包含磷砷化鎵(GaAsP)、磷化鎵(Gap)、砷化鋁鎵 20 1312586 (AlGaAs)、磷化鋁銦鎵(AlGalnP)和氮化銦鎵(GalnN)群 組之半導體材料製成者。 36·—種發光裝置,包括: 熱傳導性基板; 在熱傳導性基板上方覆蓋複數發光二極體(LED)裝 置,各發光二極體裝置使用複數焊線,在第一和第二電極之間 電氣耦合’而發光二極體裝置之顏色選自大約紅、藍、綠和琥 珀色’發光二極體個別選色之比’在於達成實質上白光,具有 所需相關之色溫(OCT);以及 封裝膠,覆蓋在複數發光二極體裝置上,以及外護堤, 包圍至少一部份發光二極體裝置,並侷限封裝膠者。 37. 如申請專利範圍第36項之裝置,其中熱傳導性基板包 括包覆金屬層之印刷電路板者。 38. 如申請專利範圍第36項之裝置,其中封裝膠包括光學 級聚矽氧者。 ,39·如申請專利範圍第36項之裝置,其中發光二極體裝置 係由選自包含磷珅化鎵(GaAsP)、磷化鎵⑴心、神化紹鎵 (A1GaAs)、磷化鋁銦鎵(AlGalnP)和氮化銦鎵(GalnN)群 組之半導體材料製成者。 21Modified on December 19, 1997, a light-emitting device comprising: a thermally conductive substrate; a plurality of light-emitting diode (LED) devices disposed in the heat-conducting human body with a diode device at the first and second electrodes Inter-electrical, and the die and the selected ones for the light-emitting device to achieve the desired phase!; = multiple bond wires, connected to the pads of the plurality of semiconductor grains; = glue 'covered over the complex light-emitting diodes difficult to set, It is limited to the outer two wires, and is soft enough to withstand the heat-conducting substrate and does not cause the light-emitting two-ply device and the second electrode to generate stress. (4) The lens is closed on the seal. The slit lens has a flat side connecting half surface area 'each convex surface area' of the green lens corresponding to at least a plurality of at least the first and the first of the at least first and the second of the thermally conductive substrates further comprising a reflective ring, and is provided as follows. One item of the light-emitting device and two light-emitting diode devices are electrically connected in series. 3. For the illuminating device of the first application of the patent scope, the two-light-emitting diode device is electrically connected in parallel. ^ 4. The illuminating device of claim 1 is a printed circuit board coated with a metal layer. 5. The illuminating device of claim 1 is placed on a thermally conductive substrate. Department, 6 · If you apply for the illuminating device of the first paragraph of the patent range, which is a light-emitting diode! = made of semiconductor material selected from the group consisting of phosphorus gallium arsenide (GaAsP), gallium phosphide (GaP), gold arsenide=UlGaAs, scalar indium gallium (5) GaInP, and indium gallium nitride ((ΜηΝ group) 7. A kind of illuminating device, including: a thermally conductive substrate; 16 1312586 electrical insulating layer, disposed above the thermally conductive substrate; square composite printed circuit board (PCB) solder enamel, covered on the electrical insulating layer, then multiple illuminating a polar body (LED) device disposed on a plurality of printed circuit boards, the light emitting diode device electrically connected between the first and second electrodes, and the color diode device has a selected one selected from the hairline The color temperature is ϊϊ Ιϊ Ιϊ ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί Zone, above the bubble encapsulant, the 'foam lens has one of the complex convex eye-shaped Wei-turned pure. Thermally conductive substrate; electrical insulation layer, placed above the thermal conductive substrate; complex LED (LED) device, Shiji Stop + ; 〆方's each illuminating dipole "(4) is colored in the first gas = layer; the body (4) has a color enamel selected from the light-emitting device to achieve the desired color temperature, and is placed on the plurality of light-emitting diode skirts; and the glue." ; 疋 'b circumference at least - part of the light-emitting diodes are placed, and limited packaging 9. Such as the application of the seventh paragraph of the application of the patent range of the luminous nightmare of the coating layer of the printed circuit board, ', 'heat transfer The substrate m is a light-emitting system according to item 7 of the scope of the patent application, and is disposed on a thermally conductive substrate. &quot;, which further includes a reflection. 11. A light-emitting device comprising: a thermally conductive substrate; an electrical insulation layer, Above the thermally conductive substrate; 1312586 a plurality of light emitting diode (LED) devices disposed on the electrically insulating layer, each of the light emitting diode devices being electrically coupled between the first and second electrodes, each of the light emitting diode devices Having a color selected from the color temperature required for hairline setting; an encapsulant disposed on a plurality of light-emitting diode devices; and an optical filter and a wave device disposed above the encapsulant. I2. Item hairline, its The light-emitting diode device is made of a semiconductor material selected from the group consisting of phosphorus gallium arsenide (GaAsP), gallium phosphide (Gap), arsenide, germanium (tetra) gallium (A1GaInP), and gallium nitride (GalnN). 13. A kind of illuminating device, comprising: a thermally conductive substrate; an electrical insulating layer disposed above the thermally conductive substrate; 夂 丄 丄 Ϊ Ϊ Ϊ Ϊ 二 二 LED 设置 设置 设置 设置 设置 设置 设置 设置 设置 设置 设置Electrically consuming with the second electrode, and containing the material body day granules 'provided in the circuit board (pCB) _ the crystal grain has a pad; the dry body is a plurality of wire bonding wires, and the light emitting diode device is connected; The encapsulant is disposed on the plurality of LED devices, and surrounds at least a portion of the LED device, and limits the encapsulant; the encapsulation rubber seals the plurality of bonding wires, and has flexibility and can be transmitted by the crucible The light-emitting diode device and the first and second electrodes are not provided: the body f1 is provided with (four) 13 items of the light-emitting device, wherein each of the light-emitting diode devices/the surface is self-recorded to achieve the desired fine color temperature. Wi5. The illuminating device of Item No. 13 of claim 15 is used for conducting a printed circuit board coated with a metal layer of God's board. Conductive base! ^ The light-emitting device of the 13th patent range, including the reflection ring, is placed on the hot substrate. 17. The illuminating device of claim 13, wherein one or more of the 18 1312586 optical lenses are disposed above the encapsulant. 18. For the hairline set of the patent application item 17, the shape of the optical lens of the towel is selected from the group consisting of convex, concave, flat, blistering and blistering. The illuminating device of the item 13 is disposed above the encapsulant. Μ 20. The illuminating device of claim 13, wherein the illuminating diode device is selected from the group consisting of GaAsP, Producers of semiconductor materials such as Gap, Shishenhua, Phosphate, and Indium Gallium (GalnN). 21. A method of fabricating a light-emitting device, comprising: providing a thermally conductive substrate Providing an electrical insulating layer above the thermally conductive substrate; and providing a plurality of light emitting diode (LED) devices on the electrically insulating layer, each of the light emitting body devices being electrically connected between the first and second electrodes; The package is provided on the light-emitting diode device; and the packaged rubber is provided for the outer berm, and the drum is small - part of the light-emitting three-pole is mixed, and the two are provided with 2 ΐ白申Γ ίίί The light-emitting diode device has eight self-luminous devices The color of the relevant color temperature is required. It is a method of making 21 products, including the semiconductor materials of the gallium (GaASP), gallium antimonide (Gap), and Shenhua Ming gallium. ^ Luminescence A diode method of at least a first and a second slave and a torn substrate system. 26. The device of claim 5, wherein at least the first and second 19 1312586 light emitting diode devices are electrically connected in series or in parallel 27. The device of claim n, wherein the thermal conductive layer is coated with a printed circuit board of the metal layer. 糸 28. If the device is applied for a patent, the illuminating diodes are selected. The color of the desired color is obtained for the illuminating device. The device of claim n, wherein each of the illuminating diodes is selected from a color selected to achieve a desired color temperature for the illuminating device. The device of the application of the nth item of the patent scope, which is further disposed on the hot substrate. The method of applying the patent of the eleventh item of the patent specification 11 wherein the shape of the optical filter is from the convex surface, the concave surface, the flat surface, the bubble Shape and Nes (fresne ▲ group. External 32. A method of fabricating a light-emitting device, comprising: providing a thermally conductive substrate; providing an electrically insulating layer over the thermally conductive substrate; and providing a plurality of printed circuit board (PCB) pads over the electrically insulating layer; A plurality of light-emitting diodes (LED' are disposed on the plurality of printed circuit board pads, and the two-two-light-emitting diode device is electrically coupled between the first and second electrodes, and the f-fabricating device has a hairline selected from the group consisting of The blister lens is mounted above the plurality of illuminating diode devices, and the lenticular lens has a plurality of convex regions, and each convex region of the blister lens corresponds to one of the plurality of semiconductor crystals. 33. The method of claim </ RTI> </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; 34. The method of applying for the 32nd patent range, 9 includes covering the encapsulant above the plurality of LED devices, and the encapsulant comprises an optical grade polyoxygen. y 35. The method of claim 32, wherein the light emitting diode device is selected from the group consisting of phosphorus arsenide (GaAsP), gallium phosphide (Gap), aluminum gallium arsenide 20 1312586 (AlGaAs), A manufacturer of semiconductor materials in the group of aluminum indium gallium phosphide (AlGalnP) and indium gallium nitride (GalnN). 36. A light-emitting device comprising: a thermally conductive substrate; a plurality of light-emitting diode (LED) devices overlying the thermally conductive substrate, each light-emitting diode device using a plurality of bonding wires electrically connected between the first and second electrodes Coupling' and the color of the light-emitting diode device is selected from approximately red, blue, green, and amber 'the ratio of individual color selections of the light-emitting diodes' to achieve substantially white light with the desired correlated color temperature (OCT); The glue covers the plurality of light-emitting diode devices, and the outer berm, surrounds at least a portion of the light-emitting diode device, and limits the packager. 37. The device of claim 36, wherein the thermally conductive substrate comprises a printed circuit board overlying the metal layer. 38. The device of claim 36, wherein the encapsulant comprises an optical concentrating oxygen. 39. The device of claim 36, wherein the light emitting diode device is selected from the group consisting of gallium phosphide (GaAsP), gallium phosphide (1), samarium (A1 GaAs), and aluminum indium phosphide. (AlGalnP) and indium gallium nitride (GalnN) group of semiconductor materials manufacturers. twenty one
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Cited By (2)

* Cited by examiner, † Cited by third party
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US8492777B2 (en) 2010-04-09 2013-07-23 Everlight Electronics Co., Ltd. Light emitting diode package, lighting device and light emitting diode package substrate
TWI708908B (en) * 2019-06-10 2020-11-01 聯嘉光電股份有限公司 Slim linear led lighting device

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Publication number Priority date Publication date Assignee Title
TWI371871B (en) 2006-12-29 2012-09-01 Ind Tech Res Inst A led chip with micro lens
TWI462350B (en) * 2008-12-24 2014-11-21 Ind Tech Res Inst Light emitting device with multi-chips
TWI456734B (en) * 2011-06-01 2014-10-11 Brightek Optoelectronic Co Ltd Light emitting diode module
CN103629557B (en) * 2012-08-20 2016-12-21 苏州璨宇光学有限公司 Light source module and preparation method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8492777B2 (en) 2010-04-09 2013-07-23 Everlight Electronics Co., Ltd. Light emitting diode package, lighting device and light emitting diode package substrate
TWI708908B (en) * 2019-06-10 2020-11-01 聯嘉光電股份有限公司 Slim linear led lighting device

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