Claims (1)
B10250 十、申請專利範圍 簡) 父;::二:極體，其包括半導體發光元件及導光稜鏡， ，盘與料導體發光元件相對之人光面，— 二=對及—位於該導光棱鏡外側之出 ，兮、、由括—形成於該反射面之油墨声， 该，由墨層包括樹脂與散射粒子.1 土層 -還包括有其改良在於：該導光稜鏡 面。 ’ μ %形凸起連接該反射面與該出光 =申請專利範圍第1項所述之發光二極體，並中”、* 墨層組份中，該樹脂之重量百分㈣二-中於該油 射粒子之重量百分含量爲1〇%至9=1〇%至鄕，該散 '其中該散4 其中該散身 硫化辞、石另 其中該散身=ί ::中：專利範圍第1項所述之發光二極體 "子之折射率爲1.6至2.75。 4.如中請專利範圍第i項所述之發光二極 ::爲二氧化欽、氧化録、氧化辞、硫酸銷 g文鈣之—或其組合。 【如申請專利範圍第2項所述之發光二極體 粒子之粒徑爲〇.〇1微米至5微米。 種發光二極體之製備方法，其包括如下步驟. 一半導體發光元件，該導光稜鏡包： 光二對之反射面—於該 兄1调之出先面，及一環形凸起， 該反射面與該出光面； "衣形凸起連— 採用樹脂與散射粒子混合配置成油墨； 14 1310250 塗布該油墨於該導光稜鏡之反射面； .固化該油墨’使其於該導光棱鏡之反射面形成油墨層； . 及 將开y成有油墨層之導光稜鏡與該半導體發光元件組裝 成發光二極體。 .7.如申凊專利範圍第6項所述之發光二極體之製備方法， .其中於塗布該油墨於該導光稜鏡之反射面後，還包括使用 治具調整該油墨於該反射面之厚度，其中該治具包括一方 ，該導光稜鏡之反射面形狀相配合之成型部。 "、 8.如申請專利範圍第6項所述之發光二極體之製備方、、去 其中該固化步驟採用熱固化與光固化之一。 15B10250 X. Patent application scope) Father;:: 2: The polar body, which includes a semiconductor light-emitting element and a light-guiding element, and the light-emitting surface of the disk and the material conductor is opposite to the human light surface, - two = right and - located at the guide The outer side of the light prism, 兮, includes the ink sound formed on the reflective surface, and the ink layer includes the resin and the scattering particles. The soil layer further includes an improvement in the light guiding surface. ' μ % shaped bumps are connected to the reflecting surface and the light emitting light = the light emitting diode according to claim 1 of the patent application, and the weight percentage of the resin in the ink layer component of the ink layer (4) The weight percentage of the oil-emitting particles is from 1% to 9% to 鄕, and the dispersion is in which the dispersion is 4, wherein the dispersion is vulcanized, and the stone is further dispersed. The refractive index of the light-emitting diode according to the first item is 1.6 to 2.75. 4. The light-emitting diode according to the item i of the patent range is: a dioxide dioxide, an oxidation record, an oxidation word, The sulphuric acid product is a calcium sulphate or a combination thereof. [The particle size of the luminescent diode particles according to claim 2 is 〇 1 至 to 5 μm. The preparation method of the luminescent diode, The method includes the following steps: a semiconductor light-emitting component, the light-guiding package: a reflective surface of the light pair - a front surface of the brother 1 and an annular protrusion, the reflective surface and the light-emitting surface; Continuation - using resin and scattering particles mixed to form an ink; 14 1310250 coating the ink on the reflective surface of the light guide Curing the ink to form an ink layer on the reflective surface of the light guiding prism; and integrating the light guiding layer of the ink layer into the light emitting diode and the semiconductor light emitting element. The method for preparing a light-emitting diode according to the sixth aspect of the invention, wherein after coating the ink on the reflective surface of the light guide, the method further comprises: adjusting a thickness of the ink on the reflective surface by using a jig, Wherein the fixture includes one side, and the shape of the reflective surface of the light guide is matched with the molding portion. ", 8. The preparation method of the light-emitting diode according to claim 6 of the patent application, and the curing thereof The procedure uses one of heat curing and light curing.