TWI310160B - Radio frequency identification tag - Google Patents

Description

1310160 九、發明說明： 【發明所屬之技術領域3 本發明係有關於一種無線頻率識別標籤，特別是有關 於一種可貼設於金屬之無線頻率識別標籤。 5 【先前技術】1310160 IX. Description of the Invention: [Technical Field 3 of the Invention] The present invention relates to a radio frequency identification tag, and more particularly to a radio frequency identification tag attachable to metal. 5 [Prior technology]

RFID(Radio Frequency Identification ;無線頻率識別） 標籤等之非接觸式標籤係可It無線通訊進行讀出及讀進資 sfl ’可官理產品之批次(LOT)管理或生產工程之履歷管理等 之資訊。為此，期能取代目前產品資訊管理所用之條碼。 習知，對於RFID標籤是採用13.56MHz、2_45GHz等之 頻率，不過現在953MHz等之UHF(Ultra High Frequency)頻 帶之使用亦已解禁。惟，RFID標籤卻具有一只要黏貼Pc (Personal Computer)殼體、儀器、金屬資材等之金屬物體（高 導電係數物體），便不能進行通訊之性質。 15 對此’有一即使貼在金屬上亦可通訊之RFID標籤之提 案’諸如有美商Intermec Technology公司（美國）之RFID (Radio Frequency Identification) tags and other non-contact tags can be read and read in the wireless communication of the wireless communication sfl 'lot management of the government products or resume management of production engineering, etc. News. To this end, the period can replace the bar code used in current product information management. Conventionally, for RFID tags, frequencies of 13.56 MHz, 2_45 GHz, etc. are used, but the use of UHF (Ultra High Frequency) bands such as 953 MHz has now been lifted. However, the RFID tag has a property of being able to communicate as long as it adheres to a metal object (a high-conductivity object) such as a Pc (Personal Computer) case, an instrument, or a metal material. 15 There is a proposal for an RFID tag that can be communicated even if it is attached to metal, such as the American company Intermec Technology (USA).

Encapsulated Stick Tag、AWID公司（美國）之Prox Link MT (APT1014)等。其等RnD標籤彳艮硬且厚度約達4mm，對於Encapsulated Stick Tag, AWID (USA) Prox Link MT (APT1014), etc. Its RnD label is hard and has a thickness of about 4 mm.

作為貼設於產品等之標籤而言尺寸過大。又，有如下之rFID 20標籤之提案。例如，有一種RFID用天線線圈，其係於以金 屬洎等構成之磁性芯材的兩面上爽設線圈而形成者（例如 專利文獻1)。又，有一種RFID用天線線圈，其係於蛇行狀 薄片上線圈之間隙***有磁芯構件之構造（例如專利文獻 2)。 5 1310160 [專利文獻1 ]特開2002-252518號公報 [專利文獻2]特開2002-1173 8 3號公報 . 惟，習知RFID標籤係如前述，很厚又硬，有難以貼在 彎曲面上使用之問題存在。 % — 5 又’專利文獻卜2中，線圈係形成央設有磁性芯材及 „ 磁‘。構件之㈣，其構造為3維構造且複雜，因此有製造成 本較高之問題點存在。 【發明内容】 • 本發明係有鑑於此而所構建成者，其目的係於提供一 1〇種無線頻率識別標籤，其厚度很薄且具彈性，可減少製造 成本，且黏貼在金屬上亦可進行無線通訊者。 依本發明，為解決上述問題而提供一種無線頻率識別 標籤，即，第1圖所示之可黏貼在金屬之無線頻率識別標籤 . 係具有薄膜30、及，呈平面狀形成在薄膜30上之倒F字型天 15線10，且薄膜30係於使該倒F字型天線10之幅射元件11、跨 接插件（short pin=jumper plug)12及供電部13由金屬突出之 # 狀態下黏貼者。 依如此無線頻率識別標籤，在薄膜3 0上形成平面狀倒F 字型天線10 ’因此薄且具彈性，且構造簡單。 20 又’薄膜30係於使倒F字型天線1〇之幅射元件11、跨接 ’ 插件12及供電部13由金屬突出之狀態下而貼設者，因此即 使黏貼在金屬上亦可進行無線通訊者。 [發明之效果] 依本發明之無線頻率識別標籤，其構造成在薄膜上形 6 1310160 成有平面狀倒F字型天線者，因此薄且具彈性，黏貼在彎曲 面上亦可使用。又，其構造簡單，因此可降低製造成本，。 又，溥膜係於使倒F字型天線之幅射元件、跨接插件及 供電部由金屬突出之狀態下而黏貼者，因此即使黏貼在金 屬上亦可進行無線通訊者。 本發明之上述及其他目的、特徵及優點應可由與顯示 本發明例之較佳實施形態之附圖有關之以下說明而可明 瞭。The size is too large as a label attached to a product or the like. Also, there are proposals for the following rFID 20 tags. For example, there is an antenna coil for RFID which is formed by cooling a coil on both surfaces of a magnetic core material made of a metal crucible or the like (for example, Patent Document 1). Further, there is an antenna coil for RFID which is a structure in which a magnetic core member is inserted in a gap between coils on a meandering sheet (for example, Patent Document 2). [Patent Document 1] JP-A-2002-252518 [Patent Document 2] JP-A-2002-1173 8 3, however, conventional RFID tags are thick and hard as described above, and are difficult to stick to curved surfaces. The problem of using it exists. % - 5 In the 'Patent Document 2', the coil system is formed with a magnetic core material and „magnetic'. The member (4) has a three-dimensional structure and is complicated, so there is a problem that the manufacturing cost is high. SUMMARY OF THE INVENTION The present invention has been made in view of the above, and its object is to provide a wireless frequency identification tag which is thin and flexible, can reduce manufacturing cost, and can be adhered to metal. According to the present invention, in order to solve the above problems, a radio frequency identification tag, that is, a radio frequency identification tag which can be adhered to metal as shown in FIG. 1 is provided, which has a film 30 and is formed in a planar shape. The inverted F-shaped day 15 line 10 on the film 30, and the film 30 is used to make the radiating element 11, the short pin=jumper plug 12 and the power supply portion 13 of the inverted F-shaped antenna 10 from metal In this case, the sticker is attached. In this way, the radio frequency identification tag forms a planar inverted F-shaped antenna 10' on the film 30. Therefore, it is thin and flexible, and has a simple structure. 20 Further, the film 30 is used to make the F The size of the font antenna Since the element 11 and the jumper 'the plug-in 12 and the power supply unit 13 are attached in a state in which the metal is protruded, the wireless communication partner can be made even if it is adhered to the metal. [Effect of the Invention] According to the radio frequency identification tag of the present invention, The structure is configured to form a flat inverted F-shaped antenna on the film, so that it is thin and elastic, and can be used by sticking to the curved surface. Moreover, the structure is simple, thereby reducing the manufacturing cost. The enamel film is attached to the radiation element of the inverted F-shaped antenna, the jumper, and the power supply portion are protruded from the metal, so that the wireless communication can be performed even if it is adhered to the metal. The above and other aspects of the present invention The objectives, features, and advantages of the invention will be apparent from the description of the appended claims.

[圖式簡單說明] 第1圖係第1實施形態之RFID標籤之俯視圖。 第2圖係顯示第！圖之倒F字型天線及IC晶片之等效電 路圖。 第3圖係顯示倒f字型天線之跨接插件位置與電容值之 關係圖。 第4圖係顯示倒f字型天線之跨接插件位置與電阻值之 關係圖。BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view showing an RFID tag of a first embodiment. Figure 2 shows the first! The equivalent circuit diagram of the inverted F-shaped antenna and the IC chip. Figure 3 is a graph showing the relationship between the position of the jumper of the inverted f-shaped antenna and the capacitance value. Figure 4 is a graph showing the relationship between the position of the jumper of the inverted f-shaped antenna and the resistance value.

第5圖係倒F字型天線黏貼在鍍銅板時之立體圖。 第6圖係針對倒f字型天線之跨接插件位置、電容值、 電阻值及電波之傳輸距離間之關係說明圖。 第7圖係顯示第1圖之RFID標籤貼在筆記型pc之液晶 背面之狀態的立體圖。 第8圖係顯示第1圖之尺!710標籤貼在筆記型Pc之指紋 感應器旁邊之狀態的立體圖。 第9圖係倒F字型天線之史密斯圖之模擬示意圖。 7 1310160 第10圖係顯示倒F字型天線之史密斯圖之實測值之圖。 第11圖係成為特性變化之模型且貼設於金屬殼體之 RFID標籤之立體圖。 第12圖係顯示RFID標籤個體及貼設於金屬殼體時之頻 5率及電容值之關係圖。 第13圖係顯示RFID&臧早體及貼設於金屬殼體時之頻 率及增益之關係圖。 第14圖係顯示某一 1C晶片以半波長折疊雙極天線做無 線通訊時之傳輸距離為2_ 15m時，該ic晶片用於第1圖之 10 RFID標籤時之增益圖。 苐15圖係一用以說明RFID標籤之指向性的示意圖。 第16圖係第15圖之RFID標籤之指向性的示意圖。 第17圖係第2實施形態之RHD標籤之俯視圖。 第18圖係倒F字型天線之史密斯圖之模擬示意圖。 15 【實施方式】 以下，參考附圖，詳細說明本發明之第丨實施形態。 第1圖係第1實施形態之RFID標籤之俯視圖。如圖所 示，RFID標籤係由倒F字型天線1〇、IC晶片2〇及薄膜3〇所 構造成者。倒F字型天線10係箔狀金屬，呈平面狀地形成在 20薄膜30之表面。又，在第1圖中，顯示該RFID標籤安裝在諸 如電子機器之金屬殼體40之狀態。 倒F子型天線1 〇係由幅射元件11、跨接插件（匹配電 路）12、供電部13、接地面14所構造成者。幅射元件u係以 與接地面14之一邊同一長度並列形成，一端是與供電部13 8 1310160 相連接，另一端則呈開放狀態。又，在幅射元件u之兩端 間設有跨接插件12，與接地面14相連接。在供電部13與接 地面14間安裝有1C晶片20，1C晶片20係以倒F字型天線1〇 為中介，以諸如953MHz之UHF頻率之電波而與讀寫器進行 5無線通訊。1C晶片20係寫入由讀寫器接收之資訊，或，將 所讀出之資訊發送至讀寫器。 形成有倒F字型天線1〇之薄膜3〇係於使倒ρ字型天線1〇 之幅射元件11、跨接插件12及供電部π由金屬殼體4〇突出 (離開金屬殼體40上之狀態）之狀態下黏貼。薄膜3〇朝金屬殼 1〇體4〇之黏貼係可用雙面膠帶進行，亦可藉黏著劑進行者。 此外，在第1圖中，形成接地面14之設有跨接插件12與供電 部13之一邊與金屬殼體4〇之一邊一致之狀態下黏貼薄膜 30，使倒F字型天線1〇之幅射元件n、跨接插件12及供電部 13形成由金屬殼體4〇突出之狀態。如此，將幅射元件u、 15跨接插件12及供電部13形成與金屬殼體4〇不重疊之狀態， 便可與讀寫器進行無線通訊者。 倒F子型天線1〇之接地面14的大小係諸如橫長汪為 80mm、縱長b為45mm。幅射元件丨丨之長度係與接地面14之 寬度大小相同，為8〇mm。幅射元件丨丨與接地面14間之距離 20 c為5mm者。幅射元件丨卜跨接插件12及供電部13之寬度d、 e、f為1mn^。跨接插件12與供電部13間之距離X係藉1C晶 片20之阻抗決定。即，跨接插件12之位置係藉與IC晶片2〇 之阻抗匹配之狀態下決定。此外，薄膜3〇之大小係與倒F 予型天線10之外框同一大小或較大，俾使倒F字型天線1〇 9 1310160 形成在薄膜30上者。又，前述倒F字型天線之大小只是—種 形態例，並不限於此。 倒F字型天線1〇之材料係諸如銅、銀或鋁等之金屬。倒F 字型天線1 〇之厚度係考慮表皮效應(skin effect)所引起之電 5流損失而決定者。表皮效應係由流動在倒F字型天線之電流 的頻率與材料之導電係數來決定，例如，材料為銅、電波 之頻率為913MHz時，則須有2/zm至3/zm以上之厚度。換 言之’倒F字型天線10係可實現諸如5〇#m以下之薄度。薄 膜30為絕緣體，可使用諸如PET(聚對苯二曱酸乙二酯）薄 10膜。薄膜30之厚度並無特殊限制。 倒F子型天線10之製造方法係諸如將銅箔切割成第1圖 所示之形狀，藉黏著劑等方式貼設於薄膜3〇上。或，例如 將銅藉網版印刷等方式，在薄膜3〇上印刷成幻圖所示之形 狀，形成倒F字型天線10。或，例如將銅蒸鍍在薄膜川，在 Μ薄膜30上形成”圖所示之形狀之倒F字型天_。或，例 如遮蔽業經疊層在薄膜30之金屬後再進行叙刻，在薄膜如 上形成第1圖所示之形狀之倒F字型天線1〇。 如此在薄膜30形成倒J7字型天線1〇，即可實現構造簡 早之RFID標籤，且即使在金屬黏貼RFm標藏，亦可與讀寫 2〇器做無線通訊者。又，由於薄膜3吐形成平面狀倒F字型天 線10之簡單構造，即使是金屬f曲面亦可進行黏貼者。又， 在薄膜30上形成平面狀倒吟型天線1()，使製造容易，可減 少製造成本。 其人針對一可構造成即使將灯仍標籤黏貼在金層殼 1310160 體40時亦可通訊之原理簡單說明。朝金屬表面入射電波 時’其電波在金屬表面反射。此時’被反射之電波之電場 相位係相對於入射之電波的電場相位相差18〇度，使得金屬 内之電場變成0。為此’將整個RFID標籤黏貼在金屬殼體4〇 5 上時，便不能接收及發送電波。 依第1圖之RFID標籤，在於使幅射元件丨丨、跨接插件12 及供電部13由金屬殼體40突出之狀態下安裝。為此，幅射 元件11、跨接插件12及供電部13之部分沒有金屬殼體4〇存 在，使得電波不會在金屬殼體40反射，因此可做無線通訊 10 者。 其次，針對第1圖所示之RFID標籤之倒F字型天線10與 1C晶片20之電路進行說明。 第2圖係顯示第1圖之倒f字型天線與IC晶片之等效電 路圖。如圖所示’倒F字型天線1〇係由ic晶片20來看，可視 15為電阻R1與線圈L1之電路。1C晶片20係由倒F字型天線10 來看，則可視為具有電容器C1及電阻R2之電路。此外，圖 中節點N1係對應於第1圖之供電部13，而節點N2則對應於 接地面14。 由IC晶片2 0之倒F字型天線1 〇看到之阻抗係藉j c晶片 20 20之内部電路所決定(在第2圖中為電容器C1及電阻R2)。在 此，改變倒F字型天線1〇之阻抗，俾使於冗晶片2〇之阻抗匹 配者。 倒F子型天線10之阻抗（第2圖之線圈L1與電阻R1並聯 之並聯電路)係如第1圖所說明，藉改變跨接插件12與供電 11 1310160 部13之間隔X，而予以變更。因此，在與IC晶片2〇之阻抗匹 配之狀態下決定倒F字型天線1〇之跨接插件12之位置。 不過’倒F字型天線1〇之導納係藉第2圖之電路圖而如 下列式⑴所示者。又，Ic晶片2〇之導納係藉第2圖之電路圖 5而如下列式(2)所示。惟，式⑴、⑺之』是虛數，ω為角頻 率。 Y=(i/Rl) + (i/j^Li)...(i) Y 二（l/R2HjwCl...(2) # 藉此’為使倒F字型天線10與IC晶片20之阻抗匹配，須 10具備R1=R2之關係，且為銷除無效電力，使具 wLl之關係之狀態下，須決定跨接插件12之位置。 其次，針對倒F字型天線10之跨接插件12之位置與電容 ， 值之關係進行說明。 • 第3圖係顯不倒F字型天線之跨接插件位置與電容值之 I5關係圖。圖中之橫轴係第1圖之跨接插件12之位置（間隔X)， 縱軸則表示倒F字型天線之電容值Ccp(具 • 之關係）。又，圖中的線之x記號係表示第1圖所說明之大小 下的倒F字型天線1〇位於電波頻率為95〇MHz之模擬結果。 例如1C晶片20之電容值為1.〇1)17時，由圖示之模擬結果 - 2〇可知’將x值大概設定在18mm時，能取得阻抗匹配者。又， * 例如1C晶片20之電容值為〇.5PF時，由圖示之模擬結果可 知，將X值大概設定在35mm時，可取得阻抗匹配者。 此外，圖中的線之籲記號係表示第丨圖說明之大小下之 倒F字型天線處於電波頻率為950MHz之實測值。由圖可 12 1310160 知’實=值大概是與模擬結果相#之數據者。 其次’針對倒F字型天線1〇之跨接插件 值之關係進行制。 置興电 第4圖係顯示倒吟型天線之跨接插件位置與電阻值之 5關係圖。圖之橫軸係顯示第！圖之跨接插件12位置（間隔X)， ，軸則表7F倒F字型天線1G之電阻健叩。又，圖中的線係 顯示第1圖說明之大小下之倒F字型天線爾於電波頻率為 950MHz之模擬結果。 例如1C晶片20之電阻值為125咖時，㈣中之模擬結 10果可知，將X值大概設定在2Gmm時，便可取得阻抗匹配者。 又例如1C曰曰片20之電阻值為175〇〇〇時，由圖中模擬結果 可知，將X值大概設定在25mm時，便可取得阻抗匹配者。 此外，如第3、4圖所示，倒F字型天線1〇之電容值與電 阻值係藉跨接插件12之位置而分別變化。因此，不僅須使 15只有一邊的值一致，還須考慮兩邊之模擬結果的值，俾決 定跨接插件12之位置。又，實際上將謂·籤貼在金屬上 時，亦可使電阻值與模擬結果相比有大幅改變，因此亦須 藉黏貼RFID標籤之金屬，調整電阻值者。 其次，針對將第1圖之RFID標籤貼在鍍鋼板時倒F字型 20天線10之跨接插件12之位置與、電容值、電阻值、及、電 波之傳輸距離之關係進行說明。 第5圖係顯示倒F字型天線貼在鍍銅板時之立體圖。圖 中’在鍍銅板52上貼設有RFID標籤51。RFID標籤51係第1 圖所示之RHD標籤，具有倒F字型天線1〇及薄膜3〇。鍍銅 13 1310160 板52係呈長方形狀，具有2〇5mmxl3〇mm之大小。 第6圖係針對倒F字型天線之跨接插件位置與、電容 值、電阻值、及、電波傳輸距離間之關係之說明圖。圖中 的表61係顯示貼設於第5圖之鍍銅板522Rfid標籤51以 5 913MHz之電波進行無線通訊時之實測值者。 如表61所示，跨接插件12之位置（間隔X)是20mm時，倒 F字型天線1〇之電容值Ccp之實測值為丨28忡，電阻值為 3264Ω。電波之傳輸距離則為19〇cm。跨接插件丨^之位置是 25mm時，倒F字型天線1〇之電容值Ccp之實測值為l l〇pF， 10電阻值是3242Ω。電波之傳輸距離則為14〇cm。跨接插件12 之位置在30mm時’倒F字型天線1 〇之電容值Ccp之實測值是 0.79pF，電阻值為3772Ω。電波之傳輸距離則為8〇cm。 接著，針對將RFID標籤貼設於筆記型pC時之電波傳輸 距離進行說明。 15 弟7圖係顯示將弟1圖之RFID標鐵貼設於筆記型pc之 液晶背面之狀態的立體圖。圖中，在筆記型PC71之液晶書 面背面72上貼設有RFID標籤51。RFID標籤51係第1圖所示 之RFID標籤，具有倒F字型天線1〇及薄膜3〇。又，倒F字型 天線10之跨接插件12的位置在20mm。如此，在筆記型pc71 20 之液晶畫面背面72上貼設有RFID標籤51時，電波之傳輸距 離為140cm。 第8圖係顯示將第1圖之RFID標籤貼設在筆記型pc之 指紋感應器旁的狀態之立體圖。圖中，在筆記型PC71之指 紋感應器73之旁邊貼設有RFID標籤51。RFID標籤51係第1 14 1310160 圖所示之RFID標籤，具有倒F字型天線10及薄膜30。又， 倒F字型天線10之跨接插件12位置位於20mm。如此，筆記 型PC71之指紋感應器73之旁邊貼設有RFID標籤51時，則電 波之傳輸距離為140cin。 其次’針對頻率對於倒F字型天線10之阻抗變化進行說 明。 第9圖係顯示倒f字型天線之史密斯圖之模擬圖。第9(a) 圖係顯示跨接插件位置在20mm時阻抗的變化者。將頻率從 800MHz改變到1.1GHz，阻抗則如第9(A)之箭頭所示變化。 10第9(B)圖係顯示跨接插件位置在25mm時阻抗的變化者。將 頻率從800MHz改變到1 · 1 GHz時，阻抗則如第9(B)圖之箭頭 所示變化。弟9(C)圖係顯示跨接插件位置在3〇mm時阻抗的 變化者。將頻率從800MHz改變到1.1GHz時，阻抗則如第9(C) 圖之箭頭所示變化。 15 第10圖係顯示倒F字型天線之史密斯圖之模擬圖。第 ι〇(Α)圖係顯示跨接插件位置在2〇〇1111時阻抗的變化者。將 頻率從800MHz改變到1.1GHz，阻抗則如第ι〇(Α)之箭頭所 不變化。第10(B)圖係顯示跨接插件位置在25mm時阻抗的 變化者。將頻率從800MHz改變到ughz時，阻抗則如第 2〇 10(B)圖之箭頭所示變化。第1〇(c)圖係顯示跨接插件位置在 3〇mm時阻抗的變化者。將頻率從8〇〇MHz改變到丨iGHz 蛉，阻抗則如第10(C)圖之箭頭所示變化。第1〇圖所示之阻 才几的實測值係顯示與第9圖所示之模擬結果約略同一變化 者0 15 1310160 惟，倒F字型天線1〇之阻抗變化較小者為佳。這是因為 阻抗藉頻率而有大大改變時，難以和^^ 2G之電容值取 得匹配者。第1圖所示之倒F字型天線1〇係如第9、1〇圖所 示，阻抗之變化小，因此易與1C晶片20取得阻抗匹配。又， 頻率所造成之阻抗變化較小，因此可令使用電波之頻帶擴 大。 其次，針對第1圖之RFID標籤貼設於金屬殼體時逆倒F 字型天線10之特性變化進行說明。 第11圖係顯示成為特性變化模型之金屬殼體上所貼設 10之RFID標籤之立體圖。圖中所示之金屬殼體81是鐵，具有 70mmxl00mmx5mm之大小。金屬殼體81之導電係數為 lxl07S/m。RFID標籤51係第1圖所示之RFID標籤，具有倒f 字型天線10及薄膜30。又，跨接插件12之位置在於35mm。 又，薄膜30之厚度為〇.2mm，倒F字型天線10係處於由金屬 15 殼體81浮上0.2m之狀態者。Figure 5 is a perspective view of the inverted F-shaped antenna attached to the copper plate. Fig. 6 is a diagram showing the relationship between the position of the jumper of the inverted f-shaped antenna, the capacitance value, the resistance value, and the transmission distance of the electric wave. Fig. 7 is a perspective view showing a state in which the RFID tag of Fig. 1 is attached to the back surface of the liquid crystal of the notebook pc. Fig. 8 is a perspective view showing the state of the first figure! 710 label attached to the fingerprint sensor of the notebook type Pc. Figure 9 is a schematic diagram of the simulation of the Smith chart of the inverted F-shaped antenna. 7 1310160 Figure 10 is a graph showing the measured values of the Smith chart of the inverted F-shaped antenna. Fig. 11 is a perspective view showing an RFID tag attached to a metal casing as a model of characteristic change. Fig. 12 is a graph showing the relationship between the frequency and the capacitance value of the individual RFID tag and the metal case. Fig. 13 is a graph showing the relationship between the frequency and gain of the RFID & early body and the metal casing. Fig. 14 is a graph showing the gain of the ic wafer used for the 10 RFID tag of Fig. 1 when the transmission distance of a 1C wafer with a half-wavelength folded dipole antenna for wireless communication is 2-15 m. Figure 15 is a schematic diagram for explaining the directivity of an RFID tag. Figure 16 is a schematic diagram showing the directivity of the RFID tag of Figure 15. Fig. 17 is a plan view showing the RHD label of the second embodiment. Figure 18 is a schematic diagram of the simulation of the Smith chart of the inverted F-shaped antenna. [Embodiment] Hereinafter, a third embodiment of the present invention will be described in detail with reference to the accompanying drawings. Fig. 1 is a plan view of the RFID tag of the first embodiment. As shown in the figure, the RFID tag is constructed by an inverted F-shaped antenna 1A, an IC chip 2A, and a film 3A. The inverted F-shaped antenna 10 is a foil-like metal and is formed in a planar shape on the surface of the film 30. Further, in Fig. 1, the RFID tag is mounted in a state of a metal casing 40 such as an electronic device. The inverted F sub-antenna 1 is constructed by a radiation element 11, a jumper (matching circuit) 12, a power supply portion 13, and a ground plane 14. The radiating element u is formed in parallel with the same length as one side of the ground plane 14, and one end is connected to the power supply portion 13 8 1310160, and the other end is open. Further, a jumper 12 is provided between both ends of the radiating element u, and is connected to the ground plane 14. A 1C wafer 20 is mounted between the power supply unit 13 and the ground 14, and the 1C wafer 20 is wirelessly communicated with the reader/writer by a radio wave such as a UHF frequency of 953 MHz, interposed by the inverted F-shaped antenna 1A. The 1C chip 20 writes information received by the reader/writer or transmits the read information to the reader/writer. The film 3 formed with the inverted F-shaped antenna 1 is attached to the radiating element 11 of the inverted rib antenna 1 , the jumper 12 , and the power supply portion π by the metal casing 4 ( (away from the metal casing 40 ) Paste in the state of the state). The adhesive film of the film 3 〇 toward the metal shell 1 〇 body 4 可用 can be carried out with a double-sided tape, or by an adhesive. In addition, in the first drawing, the film 12 is formed in a state in which the jumper 12 and the one side of the power supply portion 13 are formed in line with one side of the metal casing 4, and the inverted F-shaped antenna 1 is placed. The radiation element n, the jumper 12, and the power supply portion 13 are formed in a state of being protruded from the metal casing 4''. In this manner, the radiation element u, the 15 jumper 12 and the power supply portion 13 are formed in a state of not overlapping with the metal casing 4, and wireless communication with the reader/writer can be performed. The size of the ground plane 14 of the inverted F sub-antenna 1 is, for example, 80 mm in lateral length and 45 mm in longitudinal length b. The length of the radiating element 丨丨 is the same as the width of the ground plane 14 and is 8 mm. The distance between the radiating element 丨丨 and the ground plane 14 is 20 mm. The width d, e, and f of the radiating element 跨cross connector 12 and the power supply unit 13 are 1 mn. The distance X between the jumper 12 and the power supply unit 13 is determined by the impedance of the 1C wafer 20. That is, the position of the jumper 12 is determined in a state in which the impedance of the IC chip 2 is matched. Further, the size of the film 3 is the same as or larger than the outer frame of the inverted F pre-type antenna 10, so that the inverted F-shaped antenna 1 〇 9 1310160 is formed on the film 30. Further, the size of the inverted-F antenna is only an example of a form, and is not limited thereto. The material of the inverted F-shaped antenna 1 is a metal such as copper, silver or aluminum. The thickness of the inverted F-shaped antenna 1 决定 is determined by considering the electric current loss caused by the skin effect. The skin effect is determined by the frequency of the current flowing through the inverted F-shaped antenna and the conductivity of the material. For example, when the material is copper and the frequency of the electric wave is 913 MHz, it must have a thickness of 2/zm to 3/zm or more. In other words, the 'inverted F-shaped antenna 10' can achieve a thinness such as 5 〇 #m or less. The film 30 is an insulator, and a thin film such as PET (polyethylene terephthalate) can be used. The thickness of the film 30 is not particularly limited. The manufacturing method of the inverted-F antenna 101 is such that the copper foil is cut into the shape shown in Fig. 1 and attached to the film 3 by an adhesive or the like. Alternatively, for example, copper may be printed on the film 3 by means of screen printing or the like in a shape as shown in a magic image to form an inverted F-shaped antenna 10. Alternatively, for example, copper is vapor-deposited on the film, and an inverted F-shape of the shape shown in the figure is formed on the tantalum film 30. Alternatively, for example, the masking is laminated on the metal of the film 30, and then The film is formed into an inverted F-shaped antenna 1A having the shape shown in Fig. 1. Thus, an inverted J7-shaped antenna 1 is formed on the film 30, so that an RFID tag having a simple structure can be realized, and even if the metal is attached to the RFm tag It can also be used as a wireless communicator with the reader/writer 2 device. Moreover, since the film 3 is spit to form a simple structure of the planar inverted F-shaped antenna 10, even a metal f-curved surface can be pasted. Also, on the film 30 The planar inverted antenna 1() is formed to make the manufacturing easy and the manufacturing cost can be reduced. The person can construct a simple explanation for the principle that the light can be communicated even when the lamp is still attached to the gold shell 1310160 body 40. When a metal surface is incident on an electric wave, its electric wave is reflected on the metal surface. At this time, the electric field phase of the reflected electric wave is different from the electric field phase of the incident electric wave by 18 degrees, so that the electric field in the metal becomes 0. For this, RFID tag stuck to gold When the casing 4 is placed on the casing 4, the radio wave cannot be received and transmitted. The RFID tag according to Fig. 1 is mounted in a state where the radiation element 丨丨, the jumper 12 and the power supply portion 13 are protruded from the metal casing 40. For this reason, the portion of the radiating element 11, the jumper 12, and the power supply portion 13 is not present in the metal case 4, so that radio waves are not reflected in the metal case 40, so that wireless communication can be performed. The circuit of the inverted F-shaped antenna 10 and the 1C chip 20 of the RFID tag shown in the figure will be described. Fig. 2 is an equivalent circuit diagram showing the inverted f-shaped antenna and the IC chip of Fig. 1. The F-shaped antenna 1 is viewed from the ic chip 20, and the circuit 15 is a circuit of the resistor R1 and the coil L1. The 1C chip 20 is viewed from the inverted F-shaped antenna 10, and can be regarded as a circuit having a capacitor C1 and a resistor R2. In addition, the node N1 in the figure corresponds to the power supply portion 13 of Fig. 1, and the node N2 corresponds to the ground plane 14. The impedance seen by the inverted F-shaped antenna 1 of the IC chip 20 is based on the jc wafer 20. Determined by the internal circuit of 20 (in Figure 2, capacitor C1 and resistor R2). Here, change the inverted F word. The impedance of the antenna 1〇 is matched to the impedance matching of the redundant chip 2. The impedance of the inverted F sub-antenna 10 (the parallel circuit of the coil L1 and the resistor R1 in FIG. 2) is as illustrated in FIG. The interval X between the jumper 12 and the power supply 11 1310160 portion 13 is changed and changed. Therefore, the position of the jumper 12 of the inverted F-shaped antenna 1 is determined in a state of being matched with the impedance of the IC chip 2. The admittance of the 'inverted F-shaped antenna 1' is shown in the following equation (1) by the circuit diagram of Fig. 2. Again, the admittance of the Ic chip 2 is based on the circuit diagram 5 of Fig. 2 and is as follows (2) ) shown. However, the equations (1) and (7) are imaginary numbers and ω is the angular frequency. Y=(i/Rl) + (i/j^Li) (i) Y 2 (l/R2HjwCl...(2) # by this 'for the inverted F-shaped antenna 10 and the IC chip 20 Impedance matching, 10 must have the relationship of R1=R2, and in order to eliminate the invalid power, the position of the jumper 12 must be determined in the state of wLl relationship. Secondly, the jumper for the inverted F-shaped antenna 10 The position of 12 is explained by the relationship between capacitance and value. • Figure 3 shows the I5 relationship between the position of the jumper and the capacitance value of the F-shaped antenna. The horizontal axis in the figure is the jumper of Figure 1. The position of 12 (interval X), and the vertical axis indicates the capacitance value Ccp of the inverted F-shaped antenna (with a relationship of •). Moreover, the x mark of the line in the figure indicates the inverted F of the size illustrated in Fig. 1. The font antenna 1〇 is located at a simulation result of a radio wave frequency of 95 〇 MHz. For example, when the capacitance value of the 1C chip 20 is 1. 〇 1) 17, the simulation result shown in the figure - 2 〇 shows that the x value is approximately set at 18 mm. When the impedance match is obtained. Further, for example, when the capacitance value of the 1C wafer 20 is 〇.5 PF, it can be seen from the simulation results shown in the figure that the impedance matching can be obtained when the X value is set to approximately 35 mm. Further, the line of the line in the figure indicates that the inverted-F antenna of the size shown in the figure is at a measured frequency of the radio frequency of 950 MHz. It can be seen from Fig. 12 1310160 that the value of the real = is approximately the same as the data of the simulation result. Secondly, it is based on the relationship of the value of the jumper of the inverted F-shaped antenna. Figure 4 shows the relationship between the position of the jumper of the inverted antenna and the resistance value. The horizontal axis of the figure shows the first! The position of the jumper 12 of the figure (interval X), and the axis of the table 7F inverted F-shaped antenna 1G resistance. Further, the line system in the figure shows the simulation result of the inverted-F antenna of the size shown in Fig. 1 at a radio frequency of 950 MHz. For example, if the resistance value of the 1C wafer 20 is 125 kW, and the simulation result in (4) is 10, the impedance matching can be obtained when the X value is set to approximately 2 Gmm. Further, for example, when the resistance value of the 1C cymbal 20 is 175 ,, it can be seen from the simulation results in the figure that the impedance matching can be obtained when the X value is set to approximately 25 mm. Further, as shown in Figs. 3 and 4, the capacitance value and the resistance value of the inverted F-shaped antenna 1 are changed by the position of the jumper connector 12, respectively. Therefore, it is necessary not only to make the values of only one side coincide, but also to consider the values of the simulation results on both sides, and to determine the position of the jumper 12. In addition, when the label is actually attached to the metal, the resistance value can be greatly changed compared with the simulation result. Therefore, it is necessary to adjust the resistance value by sticking the metal of the RFID tag. Next, the relationship between the position of the jumper 12 of the inverted F-type 20 antenna 10 and the capacitance value, the resistance value, and the transmission distance of the radio wave when the RFID tag of Fig. 1 is attached to the plated steel sheet will be described. Fig. 5 is a perspective view showing the inverted F-shaped antenna attached to the copper plate. In the figure, an RFID tag 51 is attached to the copper plate 52. The RFID tag 51 is an RHD tag shown in Fig. 1 and has an inverted F-shaped antenna 1〇 and a film 3〇. Copper plating 13 1310160 The plate 52 has a rectangular shape and has a size of 2 〇 5 mm x 13 mm. Fig. 6 is an explanatory diagram showing the relationship between the position of the jumper of the inverted F-shaped antenna, the capacitance value, the resistance value, and the transmission distance of the radio wave. Table 61 in the figure shows the measured value when the Rfd tag 51 attached to the copper plate 522 of Fig. 5 is wirelessly communicated with a 5 913 MHz radio wave. As shown in Table 61, when the position (interval X) of the jumper 12 is 20 mm, the measured value of the capacitance value Ccp of the inverted F-shaped antenna 1 is 丨28 忡, and the resistance value is 3264 Ω. The transmission distance of the electric wave is 19 〇cm. When the position of the jumper 丨^ is 25mm, the measured value of the capacitance value Ccp of the inverted F-shaped antenna 1〇 is l l〇pF, and the resistance value of 10 is 3242Ω. The transmission distance of the electric wave is 14 〇cm. When the position of the jumper 12 is 30 mm, the measured value of the capacitance value Ccp of the inverted-F antenna 1 is 0.79 pF, and the resistance value is 3772 Ω. The transmission distance of the electric wave is 8 〇cm. Next, the radio wave transmission distance when the RFID tag is attached to the notebook type pC will be described. 15 The brother 7 shows a perspective view showing the state in which the RFID target of the brother 1 is attached to the back surface of the liquid crystal of the notebook pc. In the figure, an RFID tag 51 is attached to the back surface 72 of the liquid crystal book of the notebook PC 71. The RFID tag 51 is an RFID tag shown in Fig. 1 and has an inverted F-shaped antenna 1A and a film 3A. Further, the position of the jumper 12 of the inverted F-shaped antenna 10 is 20 mm. Thus, when the RFID tag 51 is attached to the back surface 72 of the liquid crystal screen of the notebook pc 71 20, the transmission distance of the radio wave is 140 cm. Fig. 8 is a perspective view showing a state in which the RFID tag of Fig. 1 is attached to the fingerprint sensor of the notebook pc. In the figure, an RFID tag 51 is attached to the side of the fingerprint sensor 73 of the notebook PC 71. The RFID tag 51 is an RFID tag shown in the first 14 1310160, and has an inverted F-shaped antenna 10 and a film 30. Further, the position of the jumper 12 of the inverted F-shaped antenna 10 is located at 20 mm. Thus, when the RFID tag 51 is attached to the fingerprint sensor 73 of the notebook PC 71, the transmission distance of the radio wave is 140 cin. Next, the impedance variation of the inverted F-shaped antenna 10 will be described with respect to the frequency. Figure 9 is a simulation diagram showing the Smith chart of the inverted f-shaped antenna. Figure 9(a) shows the change in impedance at 20mm across the connector. The frequency is changed from 800 MHz to 1.1 GHz, and the impedance is changed as indicated by the arrow of the 9th (A). Figure 10 (B) shows the change in impedance at 25 mm across the connector position. When the frequency is changed from 800MHz to 1 · 1 GHz, the impedance changes as indicated by the arrow in Figure 9(B). The Brother 9 (C) diagram shows the change in impedance at the cross-connect position of 3 〇 mm. When the frequency is changed from 800 MHz to 1.1 GHz, the impedance changes as indicated by the arrow in Figure 9(C). 15 Figure 10 shows a simulation of the Smith chart of an inverted F-shaped antenna. The ι (〇) graph shows the change in impedance at the connector position of 2〇〇1111. Change the frequency from 800MHz to 1.1GHz, and the impedance does not change as the arrow of the ι〇(Α). Figure 10(B) shows the change in impedance at 25mm across the connector position. When the frequency is changed from 800MHz to ughz, the impedance changes as indicated by the arrow in Figure 2(10). Figure 1(c) shows the change in impedance at 3 〇mm across the connector. Changing the frequency from 8〇〇MHz to 丨iGHz 蛉, the impedance changes as indicated by the arrow in Figure 10(C). The measured value of the resistance shown in Fig. 1 shows the same change as the simulation result shown in Fig. 9. 0 15 1310160 However, it is preferable that the impedance change of the inverted F-shaped antenna 1〇 is smaller. This is because when the impedance is greatly changed by the frequency, it is difficult to match the capacitance value of ^^2G. The inverted F-shaped antenna 1 shown in Fig. 1 has a small change in impedance as shown in Figs. 9 and 1 and is therefore easily matched with the 1C wafer 20. Moreover, the impedance change caused by the frequency is small, so that the frequency band in which the radio wave is used can be expanded. Next, the change in characteristics of the inverted F-shaped antenna 10 when the RFID tag of Fig. 1 is attached to the metal case will be described. Fig. 11 is a perspective view showing an RFID tag attached to a metal case which is a characteristic change model. The metal casing 81 shown in the drawing is iron and has a size of 70 mm x 100 mm x 5 mm. The metal casing 81 has a conductivity of lxl07S/m. The RFID tag 51 is an RFID tag shown in Fig. 1 and has an inverted f-shaped antenna 10 and a film 30. Also, the position of the jumper 12 is 35 mm. Further, the film 30 has a thickness of 〇2 mm, and the inverted F-shaped antenna 10 is in a state of being floated by 0.2 m from the metal 15 case 81.

第12圖係顯示RFID標籤個體與貼設在金屬殼體時之頻 率與電容值之關係圖。圖中實線係表示第11圖所示之RFID 標籤51個體之頻率及電容值之關係。圖中虛線則表示第11 圖所示之RFID標籤51貼設於金屬殼體81時頻率與電容值間 20 之關係。如圖所示，藉將RFID標籤51貼設於金屬殼體81， 在頻率整體上電容值大概提高0.085pF者。 第13圖係顯示RFID標籤個體及貼設於金屬殼體時之頻 率與增益之關係圖。圖中實線係表示第11圖所示之RFID標 籤51個體之頻率與增益之關係。圖中虛線則是表示第11圖 16 1310160 所示之RFID標籤51貼設於金屬殼體81時之頻率與增益之關 係。如圖所示’藉將RFID標籤51貼設於金屬殼體81，使得 增值在部分頻率中提高。 如此，藉將RFID標籤51貼設於金屬殼體81，使得阻抗 5及增益變化，因此只要做出配合黏貼對象之金屬殼體之設 計，亦可進一步加長電波之傳輸距離。Figure 12 is a graph showing the relationship between the frequency and capacitance of an individual RFID tag and a metal housing. The solid line in the figure indicates the relationship between the frequency and the capacitance value of the individual RFID tag 51 shown in Fig. 11. The broken line in the figure indicates the relationship between the frequency and the capacitance value 20 when the RFID tag 51 shown in Fig. 11 is attached to the metal case 81. As shown in the figure, by attaching the RFID tag 51 to the metal case 81, the capacitance value is increased by about 0.085 pF as a whole. Fig. 13 is a graph showing the relationship between frequency and gain of an individual RFID tag and a metal case. The solid line in the figure indicates the relationship between the frequency and the gain of the individual RFID tag 51 shown in Fig. 11. The dotted line in the figure indicates the relationship between the frequency and the gain when the RFID tag 51 shown in Fig. 11 161010160 is attached to the metal casing 81. As shown in the figure, the RFID tag 51 is attached to the metal casing 81 so that the added value is increased in part of the frequency. As described above, by attaching the RFID tag 51 to the metal case 81, the impedance 5 and the gain are changed. Therefore, as long as the design of the metal case to be attached is made, the transmission distance of the radio wave can be further lengthened.

其次，說明某一1C晶片以半波長折疊雙極天線做無線 通訊時之傳輸距離為2.15m時，將該1C晶片用在第1圖之 RFID標籤時之傳輸距離預測者。 10 第14圖係一示意圖，顯示某一 1C晶片以半波長折疊雙 極天線做無線通訊時之傳輸距離為2.15m時，將該1C晶片用 於第1圖之RFID標籤時之增益者。將以半波長折疊雙極天線 做無線通訊時之傳輸距離為2.15m之1C晶片用於第1圖之 RFID標籤時，倒F字型天線10之增益便成為圖中所示者。 15 此外，圖中之•係表示倒F字型天線10之跨接插件12位置在 20mm時之增益；圖中之〇是倒F字型天線1〇之跨接插件12 位置在25mm時之增益；圖中之△(圖中是黑色三角）是指倒F 字型天線10之跨接插件12位置在30mm時之增益；圖中之X 則指倒F字型天線10之跨接插件12位置在3 5 m m時之增益 20 者。 如圖所示，在950MHz時，增益大致上降低一2.2dBi〜 —1.3dBi。跨接插件12之位置在25mm時則下降一2.0dBi。 半波長折疊雙極天線之增益是2dBi，因此在第1圖之 RFID標籤時，對於半波長折疊雙極之增益則是下降一 17 1310160 因此，成為10 04χ2.15与Um者，以半波長折疊雙極 為.15m之傳輸距離之ic晶片係載設於第】圖之RFID - 標藏時’可預測傳輸距離為1.1m者。 • 其次，針對RFID標籤之指向性進行說明。 5々第15圖係—用以說明RFID標籤之指向性之圖。RFID標 籤係如圖所示，令之配置於x — y座標平面者。又，令圖之 RFID標籤係第！圖所示之RFm標籤。 第16圖係顯示第15圖之RFID標籤的指向性之示意圖。 > 帛15_示之RFm標籤係如第16圖所示，是在χ轴方向具有 10 4曰向性，而不是y軸方向者。 如此，構造成在薄膜3〇形成平面狀倒F字型天線1〇之形 恕，既薄又具有彈性，可貼設於金屬殼體之彎曲面上使用。 又，其構造簡單，因此可降低製造成本。 又’薄膜30係於使所形成之倒f字型天線1〇之幅射元件 15 11、跨接插件12及供電部13由金屬突出之狀態下貼設，因 | 此即使貼設於金屬上亦可進行通訊者。 此外，RFID標籤貼設於金屬之外之物體時，便無須將 幅射元件11、跨接插件丨2、及供電部13之部分突出下再貼 設者。 20 其次’參考附圖，說明本發明之第2實施形態。第1實 施形態中，如第1圖所說明，供電部13係與幅射元件11之一 端連接’跨接插件12是位於幅射元件11之兩端之間。而第2 實施形態中，跨接插件12則與幅射元件11之一端相連，供 電部13則位於幅射元件11之兩端之間者。 18 1310160 第17圖係第2實施形態之RFID標籤之俯視圖。111711)標 籤係如圖所示，由倒F字型天線90、ic晶片1〇〇及薄膜110 所構造成者。倒F字型天線90係以諸如金屬箔構成，貼設於 薄膜110者。又，在第17圖中顯示該RFID標籤安裝在諸如電 5子機器之金屬殼體120之狀態。 倒F子型天線90係由幅射元件91、供電部92、跨接插件 93及接地面94所構造成者。幅射元件91係與接地面94之一 邊同一長度，形成並列之形態，其一端與跨接插件93相連 接，另一端則呈開放狀態。又，在幅射元件91之兩端間設 10有供電部92。供電部92與接地面94間係安裝有Ic晶片1〇〇， ICa曰片100係以倒F子型天線9〇為中介，以諸如953MHz之 UHF頻帶之電波而與讀寫器進行無線通訊。IC晶片1〇〇係寫 入由讀寫器接收之資料，又，將所讀出之資料發送到讀寫 器。 15 形成有倒F字型天線90之薄膜10係於幅射元件91、供電 部92、及跨接插件93由金屬殼體12〇突出之狀態下（離開金 屬殼體120上之狀態)黏貼者。RF1D標籤之朝金屬殼體之黏 貼方式係可以雙面膠帶黏貼，亦可藉黏著劑黏貼者。此外， 圖中，在使設有接地面94之供電部92與跨接插件93之一邊 20與金屬殼體120之一邊對齊後黏貼薄膜110，使幅射元件 91、供電部92及跨接插件93由金屬殼體12〇突出者。如此一 來，藉使幅射元件91、供電部92及跨接插件93形成不與金 屬殼體120相疊之狀態時，便可與讀寫器間做電波收發者。 供電部92與跨接插件93間之距離X係藉IC晶片丨〇〇之阻 19 1310160 抗决疋。’供電部92之位置係藉與1C晶片100之阻抗匹配 、疋又薄膜110之大小係與倒F字型天線90之外框相同 或較大，俾使倒？字型天線9〇黏貼於薄膜11〇者。 又，倒F字型天線9〇 '薄膜11〇之材料及製造方法係與 5第1圖說明之形態同樣，因此省略相關說明。 其次，針對頻率之倒卩字型天線9〇之阻抗變化進行說 明。 第18圖係倒F字型天線之史密斯圖之模擬示意圖。圖中 的(A)係顯示跨接插件位置位於20mm時之阻抗變化。令頻 10率從800MHz改變到i.iGHz時，則阻抗變化如圖中（a)的箭 頭符號所示者。圖中的（B)則是顯示跨接插件位置位於 25mm時之阻抗變化。令頻率從800MHz改變到1.1GHz時， 則阻抗變化如圖中（B)之箭頭符號所示者。 此外，在第17圖之倒F字型天線90中，如第18圖所示， I5其阻抗變化大於第i圖之倒F字型天線1〇。為此，依第17圖 之倒F子型天線9〇，其相對於第丨圖之倒F字型天線1〇，較難 以取得阻抗匹配。又，由於頻率之阻抗變化較大，第⑽ 之倒F子型天線9〇係相對於第1圖之倒F字型天線而言，可使 用之電波頻帶變得較窄。 20 如此，跨接插件93係位於幅射元件91之一端，供電部 92位於幅射元件91兩端之間時，RFID賴亦可黏貼於金屬 殼體120上進行無線通訊者。 又，RFID標籤黏貼於不是金屬之物體上時則不須使 幅射元件11、跨接插件12及供電部13之部分突出張貼者。 20 Ϊ310160 上述說明只是揭示本發明之原理者。對於熟知此項技 藝之人士應可進而做多種變形及變更，本發明並不限於上 述所示，所說明之正確結構及應用形態，其所對應之全部 的變形例及均等物仍可視為涵蓋在申請專利範圍及其均等 5物所揭示之本發明之範疇内者。 【圖式簡單栽^明】 第1圖係第1實施形態之RFID標籤之俯視圖。 第2圖係顯不第丨圖之倒F字型天線及IC晶片之等效電 路圖。 1〇 第3圖係、顯示倒F字型天線之跨接插件位置與電容值之 關係圖。 第4圖係顯示倒F字型天線之跨接插件位置與電阻值之 關係圖。 第5圖係倒？字型天線黏貼在鍍銅板時之立體圖。 15 第6圖係針對倒F字型天線之跨接插件位置、電容值、 電阻值及電波之傳輪距離間之關係說明圖。 第7圖係顯示第1圖之RFID標籤貼在筆記型P C之液晶 背面之狀態的立體圖。 第8圖係顯示第1圖之RFID標籤貼在筆記型PC之指紋 20 感應器旁邊之壯^ 悠的立體圖。 第9圖係倒F字型天線之史密斯圖之模擬示意圖。 第1〇圆係顯示倒F字型天線之史密斯圖之實測值之圖。 第11圖係成為特性變化之模型且貼設於金屬殼體之 RFID標籤之立體圖。 21 1310160 第u圖係顯*RFID標籤個體及貼設於金屬殼體時之頻 率及電容值之關係圖。 第13圖係顯示RFID標籤單體及貼設於金屬殼體時之頻 率及增益之關係圖。 第14圖係顯示某一IC晶片以半波長折疊雙極天線做無 線通讥時之傳輸距離為215m時，該IC晶片用於第i圖之 RJID標籤時之增益圖。Next, a description will be given of a transmission distance predictor when the 1C chip is used for the RFID tag of Fig. 1 when the transmission distance of a 1C chip is 200 mm when the half-wavelength folded dipole antenna is used for wireless communication. 10 Fig. 14 is a schematic view showing the gain of the 1C wafer when used for the RFID tag of Fig. 1 when the transmission distance of a 1C wafer for wireless communication using a half-wavelength folded dipole antenna is 2.15 m. When a 1C wafer having a transmission distance of 2.15 m for wireless communication using a half-wavelength folded dipole antenna is used for the RFID tag of Fig. 1, the gain of the inverted F-shaped antenna 10 becomes as shown in the figure. In addition, the figure in the figure indicates the gain of the jumper 12 of the inverted F-shaped antenna 10 at 20 mm; the figure is the gain of the inverted F-shaped antenna 1 at the position of the connector 12 at 25 mm. The Δ in the figure (black triangle in the figure) refers to the gain of the cross-connector 12 of the inverted F-shaped antenna 10 at a position of 30 mm; the X in the figure refers to the position of the jumper 12 of the inverted-F-shaped antenna 10. The gain is 20 at 3 5 mm. As shown, at 950 MHz, the gain is substantially reduced by a factor of 2.2 dBi to 1.3 dBi. The position of the jumper 12 is lowered by 2.0dBi at 25mm. The gain of the half-wavelength folded dipole antenna is 2dBi, so in the RFID tag of Fig. 1, the gain for the half-wavelength folded bipolar is decreased by 17 1310160. Therefore, it becomes 10 04 χ 2.15 and Um, folded at half wavelength. The ic chip system with a transmission distance of 15m is mounted on the RFID-labeled 'figure transmission distance of 1.1m. • Second, explain the directionality of RFID tags. 5々 Figure 15—a diagram illustrating the directivity of an RFID tag. The RFID tag is shown in the figure as shown in the x-y coordinate plane. Also, make the RFID tag of the figure the first! The RFm tag shown in the figure. Fig. 16 is a view showing the directivity of the RFID tag of Fig. 15. > RF15_ shows the RFm tag as shown in Fig. 16, which is 10 4 曰 in the x-axis direction, not the y-axis direction. Thus, it is configured to form a flat inverted F-shaped antenna 1〇 in the film 3〇, which is thin and elastic, and can be attached to the curved surface of the metal casing. Moreover, the structure is simple, and thus the manufacturing cost can be reduced. Further, the film 30 is attached in such a manner that the radiation element 15 11 of the inverted f-shaped antenna 1 formed, the jumper 12 and the power supply portion 13 are protruded from the metal, because even if it is attached to the metal Can also be a correspondent. Further, when the RFID tag is attached to an object other than metal, it is not necessary to project the radiating element 11, the jumper plug 2, and the portion of the power supply portion 13 to be attached. 20 Next, a second embodiment of the present invention will be described with reference to the drawings. In the first embodiment, as illustrated in Fig. 1, the power supply portion 13 is connected to one end of the radiation element 11. The jumper 12 is located between both ends of the radiation element 11. In the second embodiment, the jumper 12 is connected to one end of the radiating element 11, and the power supply 13 is located between the ends of the radiating element 11. 18 1310160 Figure 17 is a plan view of the RFID tag of the second embodiment. 111711) The label is constructed as shown by the inverted F-shaped antenna 90, the ic wafer 1 and the film 110. The inverted F-shaped antenna 90 is formed of, for example, a metal foil and attached to the film 110. Further, in Fig. 17, the state in which the RFID tag is mounted on the metal casing 120 such as an electric machine is shown. The inverted F sub-antenna 90 is constructed by a radiation element 91, a power supply unit 92, a jumper plug 93, and a ground plane 94. The radiating element 91 is formed in the same length as one side of the ground plane 94, and one end thereof is connected to the jumper 93, and the other end is in an open state. Further, a power supply portion 92 is provided between both ends of the radiation element 91. An Ic chip 1 is mounted between the power supply unit 92 and the ground plane 94. The ICa chip 100 is interconnected with the reader by a radio wave such as a UHF band of 953 MHz, interposed by the inverted F antenna. The IC chip 1 writes the data received by the reader and, in turn, sends the read data to the reader. The film 10 on which the inverted F-shaped antenna 90 is formed is attached to the radiation element 91, the power supply portion 92, and the jumper 93 in a state of being protruded from the metal casing 12 (outside the metal casing 120). . The adhesion of the RF1D label to the metal case can be adhered by double-sided tape or by adhesive. In addition, in the figure, after the power supply portion 92 provided with the grounding surface 94 and one side 20 of the jumper connector 93 are aligned with one side of the metal casing 120, the film 110 is adhered to the radiation element 91, the power supply portion 92 and the jumper connector. 93 is protruded from the metal casing 12〇. In this manner, when the radiation element 91, the power supply portion 92, and the jumper 93 are formed so as not to overlap with the metal casing 120, a radio wave transceiver can be made between the reader and the reader. The distance X between the power supply portion 92 and the jumper connector 93 is resisted by the resistance of the IC chip. The position of the power supply unit 92 is matched by the impedance of the 1C wafer 100, and the size of the film 110 is the same as or larger than the outer frame of the inverted F-shaped antenna 90. The font antenna 9 is adhered to the film 11 . Further, the material and manufacturing method of the inverted F-shaped antenna 9 〇 'film 11 同样 are the same as those of the first embodiment shown in Fig. 1, and therefore the description thereof will be omitted. Next, the impedance change of the inverted inverted antenna 9 频率 will be described. Figure 18 is a schematic diagram of the simulation of the Smith chart of the inverted F-shaped antenna. (A) in the figure shows the change in impedance when the jumper position is at 20 mm. When the frequency 10 is changed from 800 MHz to i.iGHz, the impedance changes as shown by the arrow symbol in (a). (B) in the figure shows the change in impedance when the jumper position is 25 mm. When the frequency is changed from 800 MHz to 1.1 GHz, the impedance changes as indicated by the arrow symbol in (B). Further, in the inverted F-shaped antenna 90 of Fig. 17, as shown in Fig. 18, the impedance variation of I5 is larger than that of the inverted F-shaped antenna 1 of Fig. i. For this reason, according to the inverted F-type antenna 9A of Fig. 17, it is difficult to obtain impedance matching with respect to the inverted F-shaped antenna 1〇 of the second figure. Further, since the impedance of the frequency changes greatly, the inverted-F sub-array 9 of the (10) is narrower than the inverted-F-shaped antenna of Fig. 1 and can be used. Thus, the jumper 93 is located at one end of the radiating element 91. When the power supply portion 92 is located between the two ends of the radiating element 91, the RFID can also be adhered to the metal casing 120 for wireless communication. Further, when the RFID tag is attached to an object other than metal, it is not necessary to make the portion of the radiation element 11, the jumper 12, and the power supply portion 13 protrude. 20 Ϊ 310160 The above description is only illustrative of the principles of the invention. Many variations and modifications may be made by those skilled in the art, and the present invention is not limited to the above-described embodiments, and all the modifications and equivalents of the correct structure and application form are still considered to be covered. The scope of the invention disclosed in the scope of the invention and its equivalents are disclosed. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view of an RFID tag of a first embodiment. Figure 2 shows the equivalent circuit diagram of the inverted F-shaped antenna and IC chip of Figure No. 1〇 Figure 3 shows the relationship between the position of the jumper and the capacitance value of the inverted F-shaped antenna. Figure 4 is a graph showing the relationship between the position of the jumper of the inverted F-shaped antenna and the resistance value. Figure 5 is down? A perspective view of a font antenna attached to a copper plate. 15 Fig. 6 is a diagram showing the relationship between the position of the jumper of the inverted F-shaped antenna, the capacitance value, the resistance value, and the transmission distance of the electric wave. Fig. 7 is a perspective view showing a state in which the RFID tag of Fig. 1 is attached to the back surface of the liquid crystal of the notebook type P C . Fig. 8 is a perspective view showing the strong image of the RFID tag of Fig. 1 attached to the fingerprint 20 of the notebook PC. Figure 9 is a schematic diagram of the simulation of the Smith chart of the inverted F-shaped antenna. The first round line shows a graph of the measured values of the Smith chart of the inverted F-shaped antenna. Fig. 11 is a perspective view showing an RFID tag attached to a metal casing as a model of characteristic change. 21 1310160 Figure u shows the relationship between the frequency and capacitance of the *RFID tag individual and the metal case. Figure 13 is a graph showing the relationship between the frequency and gain of the RFID tag unit and its application to the metal case. Figure 14 is a graph showing the gain of the IC chip when it is used for the RJID label of the i-th image when the transmission distance of an IC chip with a half-wavelength folded dipole antenna for wireless communication is 215 m.

第15圖係—用以說明RFID標籤之指向性的示意圖。 第16圖係第15圖之RHD標籤之指向性的示意圖。 第P圖係第2實施形態之RFID標籤之俯視圖。 第18圖係倒F字型天線之史密斯圖之模擬示意圖。 【主要元件符號説明】 10…倒F字型天線 11…幅射元件 12…跨接插件 13…供電部Figure 15 is a schematic diagram for explaining the directivity of an RFID tag. Figure 16 is a schematic illustration of the directivity of the RHD tag of Figure 15. Fig. P is a plan view of the RFID tag of the second embodiment. Figure 18 is a schematic diagram of the simulation of the Smith chart of the inverted F-shaped antenna. [Description of main component symbols] 10... inverted F-shaped antenna 11... radiating element 12... jumper plug-in 13... power supply section

14·..接地面 20·..1C 晶片 30··.薄膜 40···金屬殼體 2214·.. Grounding surface 20·..1C Wafer 30··. Film 40···Metal housing 22

Claims (1)

ΤΉ ΓΠ ~-—-_ J U 〇ϋ 1^94121611號__請專_囿馳龙 97.10.23 十、申請專利範圍： 1· -種無線頻率識別標籤，係可黏貼於金屬上者，包含有： 薄膜；及 呈平面狀形成在前述薄膜上之倒？字型天線； 5 刖述薄膜係於使其上形成之前述倒F字型天線之幅 射兀件、跨接插件及供電部由前述金屬突出之狀態下黏 貼者， 且從前述幅射元件之全《去前述跨接插件與前述 供電部之_輯所得的長度，錄所使用無線信號之 10 波長的4分之1短。 2. 如申4專利⑭圍第i項之無_率識籤，其中前述供 電部係形成於前述幅射元件之—端，而前述跨接插件則 形成於前述幅射元件之兩端間者。 3. 如申請專利範圍第2項之無線頻率識別標籤其中前述跨 15接插狀位置雜可細載狀半㈣裝置之阻抗㈣ 之狀態下而決定者。 4. 如申請專利顧^奴無_率翻標籤，其中前述跨 接插件係形成於__元狀_端，而前述供電部係 形成於前述幅射元件之兩端間者。 20 5.如中料韻圍第4項之無線頻率朗賴，其中前述供 電部之位置係於可與所載設之半導體裝置之阻抗匹配: 狀態下而決定者。 6_如申請專利範圍第丨項之無線頻率識別標鐵，其中前述倒 F字型天線係藉印刷㈣成在前述薄膜上者。 23 1310160 7. 如申請專利範圍第1項之無線頻率識別標籤，其中前述倒 F字型天線係以金屬箔形成而黏貼於前述薄膜者。 8. 如申請專利範圍第1項之無線頻率識別標籤，其中前述倒 F字型天線係藉蒸鍍而形成在前述薄膜上者。 5 9. 如申請專利範圍第1項之無線頻率識別標籤，其中前述倒 F字型天線係藉對疊層於前述薄膜上之金屬進行蝕刻而 形成者。ΤΉ ΓΠ ~---_ JU 〇ϋ 1^94121611 __ Please _ 囿 龙 97 97.10.23 X. Patent application scope: 1 · - A kind of wireless frequency identification tag, which can be attached to metal, including : Film; and the formation of a flat surface on the aforementioned film? a type of antenna; 5 the film is attached to the radiation element of the inverted F-shaped antenna formed thereon, the jumper and the power supply portion are adhered by the metal, and from the radiation element The length of the "total jumper plug-in and the aforementioned power supply unit" is shorter than one-fourth of the 10 wavelengths of the wireless signal used. 2. The _ rate identification of the fourth item of claim 4, wherein the power supply portion is formed at the end of the radiation element, and the jumper is formed between the two ends of the radiation element. . 3. In the case of the radio frequency identification tag of claim 2, in which the impedance (4) of the half (four) device is half-pinned. 4. In the case of applying for a patent, the aforementioned ferrule is formed at the __ meta-end, and the aforementioned power supply portion is formed between the two ends of the radiating element. 20 5. For the wireless frequency of item 4 of Zhongyun Yunwei, the position of the power supply unit is determined by the impedance matching of the mounted semiconductor device: state. 6_ The radio frequency identification target according to the scope of the patent application, wherein the inverted F-shaped antenna is printed (4) on the film. 23 1310160 7. The radio frequency identification tag of claim 1, wherein the inverted F-shaped antenna is formed by a metal foil and adhered to the film. 8. The radio frequency identification tag of claim 1, wherein the inverted F-shaped antenna is formed on the film by evaporation. 5 9. The radio frequency identification tag of claim 1, wherein the inverted F-shaped antenna is formed by etching a metal laminated on the film. 10. 如申請專利範圍第1項之無線頻率識別標籤，其中前述 薄膜係由聚對苯二甲酸乙二酯所形成者。 1010. The radio frequency identification tag of claim 1, wherein the film is formed of polyethylene terephthalate. 10 24 1310160 七、指定代表圖： (一） 本案指定代表圖為：第（1 )圖。 (二) 本代表圖之元件符號簡單說明： 10.. .倒F字型天線 11.. .幅射元件 12.. .跨接插件 13.. .供電部 14.. .接地面 20.. . 1C 晶片 30.. .薄膜24 1310160 VII. Designated representative map: (1) The representative representative of the case is: (1). (2) The symbol of the symbol of this representative diagram is briefly described: 10.. Inverted F-shaped antenna 11.. Radiation element 12.. . Jumper plug. 13.. Power supply section 14.. Ground plane 20: . 1C wafer 30.. . film 40.. .金屬殼體 八、本案若有化學式時，請揭示最能顯示發明特徵的化學式：40.. .Metal shell 8. If there is a chemical formula in this case, please reveal the chemical formula that best shows the characteristics of the invention: