TWI309961B - - Google Patents

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1309961 九、發明說明： 【發明所屬之技術領域】 本發明係關於電漿處理裝置及方法，詳言之，係關於利 用藉由微波（Microwave)所產生之電漿處理平面顯示器等 之被處理物之電漿處理裝置以及方法。 【先前技術】BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus and method, and more particularly to a processed object such as a flat panel display using plasma generated by microwave (Microwave). Plasma processing apparatus and method. [Prior Art]

關於LCD (Liquid Crystal Display)等之平面顯示裝置之 製造’為進行敍刻（Etching)、灰化（Ashing)、或CVD (化學 氣相》儿積（Chemical Vapour Deposition))等之處理，電聚處 理裝置被廣泛地使用。電漿處理裝置之一，係藉由於處理 容器内供應微波，使處理容器内之氣體離子化（i〇nize)或激 發（Excite)’而產生電漿之微波電漿處理裝置。微波電漿處 理展置，.作為微波之供應機構，使用輻射線槽天線 line slot antenna)等放射面為圓形之平面天線者已經實用化 。現在，使用具有方形之放射面之平面天線之微波電漿處 理裝置之開發正持續進展中。其―，係使用包含複數之波 導槽天線之天線陣列者。 圖29係揭示使用波導槽天線陣列之以往之電漿處理裝i 之全體構造之縱剖面圖。此外，圖3〇係包含波導槽天線陣 列之-部分之構造之橫剖面圖。再者，此等圖式中，利用 功能方塊（Functional block)表示一部分之構造。 圖29所揭示之以往之電聚處理裂置，包含平面視方妒之 有底筒狀之處理容器Μ。處理容器磷利用銘等之金屬所形 成。處理容器1之底面中央部設置有載置台2。載置台2之頂 I03464.doc 1309961 面，配置有LCD基板3等作為被處理物。高頻電源5係介由 ' 匹配器（Matching box)4而連接於載置台2。 ， 處理容器1之底面周緣部設置有真空排氣用之排氣口 6, 處理容器1之側壁設置有將氣體導入處理容^内之導氣口 7。例—如’電漿處理裝置被使用作為蝕刻裝置之情形，係導 入有虱(Ar)等之電漿氣體、以及％等之反應氣體。 處理容器1之上部開口，係一邊從該處導入微波，—邊利 用包含石英玻璃等之電介質板恤塞，以使於處理容器… 所產生之電漿不浅漏於外部。再者，使〇型環(〇介於 處理容器1之側壁頂面與電介質板8之間，以確保處理容器玉 内之氣密性。 ° 於電’丨貝板8之上方設置有波導槽天線陣列9丨〇。電介質 板8及波導槽天線陣列91〇之外圍變成被設置於處理容器1 之側壁上之環狀之遮蔽材料（Shielding material) 9所覆蓋， 而從天線陣列91G供應至處理容器m之微波不會玫漏於外 部之構造。 於波導槽天線陣列910之導入部，連接有微波分配器93〇 ^輸出側，而於微波分配器㈣之輸人側，則介由微波波導 . f 41連接有极波產生器generat〇r) 。 .々圖3 〇所示，波導槽天線陣列91 〇包含複數之波導槽天線 _ ^〇A、910B、910C、91〇〇。波導槽天線 9i〇a 〜91〇〇 係於包 3方形波導管之放射用波導管之1€面（與磁場平行之較寬之 2 )形成有複數之放射用槽911之天線。放射用波導管之 一端係開口，另一端則被短路（Sh〇rt)。此種波導槽天線 103464.doc 1309961 910A〜910D係於使形成有槽911之放射用波導管之Η面與載 置台2相對向之狀態，被配置在與放射用波導管之軸線方向 正交之寬度方向成一整列。 此外，微波分配器930包含：具有與微波波導管41相同寬 度之導入部93 1、從導入部93 1之前緣分歧為二且各自延伸 於斜方向（Oblique direction)之分歧部932、從分歧部932之 各前緣平行延伸於波導槽天線910A〜910D之放射用波導管 之軸線方向之平行部933、以及具有與波導槽天線 91 0A〜910D之放射用波導管之寬度之總和相同寬度之分割 部934。導入部931與分歧部932之邊界部中央設置有短柱 (Stub)935。分割部934藉由延伸於放射用波導管之軸線方向 之隔板（Division plate)936，寬度方向之中央被隔開。 關於此種構造之電漿處理裝置，若驅動微波產生器42， 則微波將介由微波波導管41而被導入微波分配器9 3 〇之導 入部931。被導入導入部931之微波，位相經由短柱935而被 凋整，且於分歧部932被分割為二，並介由平行部933到達 分割部934，再被導入於波導槽天線91〇A〜91〇D之個別之放 射用波導管。被導入放射用波導管之微波，一邊於管内傳 播，一邊從Η面所形成之複數之槽911緩慢地放射，透過電 介質板《被供應至處理容器w。電子藉由供應至處理容 器1内之微波之電場而被加速，處理容器丨内之氣體被離子 化激發解離’並產生反應活性種。藉由該反應活性種 ’載置台2上之LCD基板3之表面被實施以蝕刻等之處理。 如同此電漿處理裝置，藉由使用包含複數之波導槽天線 I03464.doc 1309961 910A〜91 0D之天線陣列91 〇，能夠將微波供應至平面視方形 之處理容器1内之内部之廣泛範圍而產生電漿。此外，由於 微波分配器930關於與波導槽天線91 〇Α〜910D之放射用波 導管之軸線方向平行之中央線C係對稱的，因此，於複數之 波導槽天線910Α〜910D，亦能夠以相同位向且相同電力分 配來自微波產生器42之微波（例如，參照專利文獻丨）。Regarding the manufacture of a flat display device such as an LCD (Liquid Crystal Display), it is a process of performing etching, ashing, or chemical vapor deposition (Chemical Vapour Deposition). Processing devices are widely used. One of the plasma processing apparatuses is a microwave plasma processing apparatus which generates plasma by ionizing or exciting (Excite) the gas in the processing container by supplying microwaves in the processing container. Microwave plasma treatment is used, and as a microwave supply mechanism, a radiation plane having a circular plane antenna such as a radiation slot antenna has been put to practical use. The development of microwave plasma processing devices using planar antennas with square radiating surfaces is now in progress. It uses an antenna array that includes a plurality of waveguide antennas. Fig. 29 is a longitudinal cross-sectional view showing the entire structure of a conventional plasma processing apparatus i using a waveguide array. Further, Fig. 3 is a cross-sectional view showing a configuration of a portion of a waveguide slot antenna array. Furthermore, in these figures, a part of the structure is represented by a functional block. The conventional electropolymerization process disclosed in Fig. 29 includes a bottomed cylindrical processing container crucible having a planar viewing area. The treatment container phosphorus is formed using a metal such as Ming. A mounting table 2 is provided at a central portion of the bottom surface of the processing container 1. On the top of the mounting table 2, I03464.doc 1309961, an LCD substrate 3 or the like is disposed as a workpiece. The high-frequency power source 5 is connected to the mounting table 2 via a 'matching box'. The peripheral portion of the bottom surface of the processing container 1 is provided with an exhaust port for vacuum evacuation. The side wall of the processing container 1 is provided with an air guiding port 7 for introducing a gas into the processing chamber. For example, in the case where the plasma processing apparatus is used as an etching apparatus, a plasma gas having argon (Ar) or the like, and a reaction gas such as % are introduced. The upper portion of the processing container 1 is opened, and microwaves are introduced from there, and a dielectric plate stopper containing quartz glass or the like is used to prevent the plasma generated in the processing container from leaking to the outside. Furthermore, the 〇-shaped ring (〇 is interposed between the top surface of the side wall of the processing container 1 and the dielectric plate 8 to ensure the airtightness in the processing container jade. ° The waveguide groove is disposed above the electric 'mussel plate 8 The antenna array 9 is formed. The periphery of the dielectric plate 8 and the waveguide antenna array 91 is covered by an annular shielding material 9 disposed on the side wall of the processing container 1, and supplied from the antenna array 91G to the processing. The microwave of the container m does not leak to the outside structure. The introduction portion of the waveguide slot antenna array 910 is connected to the output side of the microwave distributor 93, and on the input side of the microwave distributor (4), the microwave waveguide is used. . f 41 is connected to the polar wave generator generat〇r). As shown in FIG. 3A, the waveguide slot antenna array 91 〇 includes a plurality of waveguide slot antennas _ ^ 〇 A, 910B, 910C, 91 〇〇. The waveguide slot antenna 9i〇a to 91〇〇 is an antenna of a plurality of radiation grooves 911 formed on the surface of the radiation waveguide of the package of the square wave waveguide (the width of the waveguide is parallel to the magnetic field). One end of the radiation waveguide is open and the other end is short-circuited (Sh〇rt). The waveguide slot antenna 103464.doc 1309961 910A to 910D is disposed such that the surface of the radiation waveguide in which the groove 911 is formed faces the mounting table 2, and is disposed orthogonal to the axial direction of the radiation waveguide. The width direction is in an entire column. Further, the microwave distributor 930 includes an introduction portion 93 1 having the same width as the microwave waveguide 41, a diverging portion 932 which is branched from the leading edge of the introduction portion 93 1 and which extends in the oblique direction, and a branch portion 932 from the branch portion. Each of the leading edges of 932 extends in parallel with the parallel portion 933 of the waveguides of the waveguide antennas 910A to 910D in the axial direction and the same width as the sum of the widths of the waveguides of the waveguide antennas 91 0A to 910D. Department 934. A stub 935 is provided at the center of the boundary portion between the introduction portion 931 and the branch portion 932. The division portion 934 is partitioned by a partition plate 936 extending in the axial direction of the radiation waveguide in the center in the width direction. In the plasma processing apparatus of such a configuration, when the microwave generator 42 is driven, microwaves are introduced into the introduction portion 931 of the microwave distributor 9 3 via the microwave waveguide 41. The microwave introduced into the introduction unit 931 is immersed in the short column 935, divided into two at the branching portion 932, and reaches the dividing portion 934 via the parallel portion 933, and is introduced into the waveguide slot antenna 91A~ 91〇D of individual radiation waveguides. The microwaves introduced into the radiation waveguide are slowly radiated from the plurality of grooves 911 formed in the crucible surface while being propagated in the tube, and are supplied to the processing container w through the dielectric plate. The electrons are accelerated by the electric field supplied to the microwaves in the processing vessel 1, and the gas in the processing vessel is ionized to dissociate and produce a reactive species. The surface of the LCD substrate 3 on the reaction substrate 2 is subjected to etching or the like. As with this plasma processing apparatus, by using an antenna array 91 包含 including a plurality of waveguide slot antennas I03464.doc 1309961 910A to 91 0D, it is possible to supply microwaves to a wide range of the inside of the processing container 1 in a plan view square. Plasma. Further, since the microwave distributor 930 is symmetric with respect to the center line C parallel to the axial direction of the waveguides of the waveguide antennas 91 〇Α 910 910D, the plurality of waveguide slot antennas 910 Α 910 910D can also be identical. The microwaves from the microwave generator 42 are distributed in the same direction and the same power (for example, refer to the patent document 丨).

再者，除本說明書所揭示之先前技術文獻資訊中所特定 之先前技術文獻外，截至提出本申請案為止，本案申請人 並未發現與本發明有關聯之先前技術文獻。 【專利文獻1】特開平11-111493號公報 (發明所欲解決之問題） 為降低平面顯示裝置之製造成本，能夠處理較以往更為 大型之基板之電漿處理裝置之實現一直受到高产 處理較以往更為大型之基板，需要較以往更大口徑之處理 容器：而必須配合此處理容器之口徑，加大供應微波至處 理容器内之平面天線之開口面積。 使用上述包含複數之波導槽天線之天線陣列作 線之情形，為加大開π面積，可考慮加大波導槽天線之放 射用波導管之剖面尺寸之方法^是，放射収導管之剖 面之長衫超出管内波長，除ΤΕι。模式之外，H切 被激發，微波之控制變得困難。 力一乃面，利用將 ^ 'rt it -i* Α Α 亚籍由從 各波導槽天線所放射之微波於電 f 、 电"貝板8内激起表面波 (Surface Wave)之方法，由於此表 夂 囬砹係弋位波模式，因此 103464.doc 1309961 ，電場分布不平均’且藉由該電場所激發之電漿之分佈易 變成不平均。此外，由於電漿表面上垂直方向之電場成分 大，因此，微波容易被電漿所吸收，電子溫度增大，而發 生基板損壞（Damage)、與處理容器！之喷濺（Spmter)所造成 之金屬污染。 因此，為加大開口面積，可以增加構成天線陣列之波導 槽天線之數量。但是，此情形，若利用與以往之電漿處理 裝置中所使用之微波分配器93〇相同之方法於各波導槽天 線之放射用波導管分配微波，則變成需要多數之具有二分 叉之分歧部932 ’而具有微波分配器之構造複雜化且大型化 之問題。此外，波導槽天線之數量係2n (11為2以上之整數） 以外之情形，無法使用具有分歧部932之微波分配器，而具 有裝置構造之設計自由度小之問題。 此外，為使用較以往更大σ徑之處理容器進行電聚處理 ，有必要將配合電漿被產生之空間之增加之大量電力供應 至處理容器。但是，由於若微波產生器42之輸出電力變大 ，則其價格將變得特別高’因此，具有電漿處理裝置全體 之製造成本因微波產生器4 2之價格而大幅變高之問題。 此外，由於處理容器1内之電場強度愈靠近供應微波之槽 911愈強’而且’電場強度愈強電漿產生愈被促進，因此， 處理容it 1内之電裝密度分布具有於槽911之附近變高之傾 向。為使電漿密度分布更為均等&，若將波導槽天線 91〇A〜91〇D之放射用波導管之軸線方向所配置之槽911之 間隔變小即可。但是’由於若不依據基於放射用波；管之 103464.doc 10 1309961 官内波長之特定間隔配置槽911，微波之放射方向將會產生 變化，因此’具有無法將槽9丨丨之間隔過度地變小之問題。 本發明係為解決此種課題所作成者，其目的在於：抑制 加大包含複數之波導槽天線之天線陣列之開口面積時之裝 置構造之複雜化以及大型化，而且，擴大裝置構造之設計 自由度。Furthermore, the applicant of the present application has not found prior art documents related to the present invention as of the filing of the present application, except for the prior art documents specified in the prior art document information disclosed in the present specification. [Patent Document 1] JP-A-H11-111493 (Problem to be Solved by the Invention) In order to reduce the manufacturing cost of a flat display device, the realization of a plasma processing apparatus capable of processing a substrate larger than the conventional one has been subjected to high-yield processing. In the past, larger substrates required larger processing vessels than ever before: the diameter of the processing vessel should be matched to increase the open area of the planar antenna that supplies microwaves to the processing vessel. In the case where the antenna array including the plurality of waveguide slot antennas is used as the line, in order to increase the π area, a method of increasing the cross-sectional size of the waveguide of the waveguide antenna can be considered. In-tube wavelength, except ΤΕι. Outside the mode, the H-cut is excited and the control of the microwave becomes difficult. Force One is the method of stimulating the surface wave by the microwave radiated from each waveguide slot antenna by the ^ 'rt it -i* Α Α , , , , , , , , , , , , , , , , , , , Since this table returns to the 弋-bit mode, 103464.doc 1309961, the electric field distribution is not average' and the distribution of the plasma excited by the electric field tends to become uneven. In addition, since the electric field component in the vertical direction on the surface of the plasma is large, the microwave is easily absorbed by the plasma, the temperature of the electron is increased, and the substrate is damaged (Damage) and the processing container! Metal contamination caused by Spmter. Therefore, in order to increase the aperture area, the number of waveguide slot antennas constituting the antenna array can be increased. However, in this case, if microwaves are distributed to the radiation waveguides of the waveguide antennas by the same method as the microwave distributor 93 used in the conventional plasma processing apparatus, it becomes necessary to have a majority of bifurcations. The portion 932' has a problem that the structure of the microwave distributor is complicated and large. Further, in the case where the number of waveguide channel antennas is 2n (11 is an integer of 2 or more), the microwave distributor having the branching portion 932 cannot be used, and the design freedom of the device structure is small. Further, in order to perform electropolymerization treatment using a processing vessel having a larger σ-diameter than the conventional one, it is necessary to supply a large amount of electric power in combination with the space in which the plasma is generated to the processing vessel. However, if the output power of the microwave generator 42 becomes large, the price thereof becomes extremely high. Therefore, the manufacturing cost of the entire plasma processing apparatus is greatly increased due to the price of the microwave generator 42. In addition, since the electric field strength in the processing container 1 is closer to the groove 911 for supplying the microwave, and the electric field strength is higher, the plasma generation is promoted. Therefore, the electric density distribution in the processing capacity 1 is in the vicinity of the groove 911. The tendency to become higher. In order to make the plasma density distribution more uniform, the interval between the grooves 911 in the axial direction of the waveguides of the waveguide antennas 91A to 91D can be made small. However, 'the radiation direction of the microwave will change if the groove 911 is not arranged according to the radiation-based wave; the tube is at a specific interval of 103464.doc 10 1309961. Therefore, it is impossible to excessively divide the groove 9丨丨. Smaller problem. The present invention has been made to solve such a problem, and an object of the present invention is to suppress complication and enlargement of an apparatus structure when an opening area of an antenna array including a plurality of waveguide slot antennas is increased, and to expand the design freedom of the device structure. degree.

此外，其他之目的在於抑制電漿處理裝置之製造成本。 再者，另一目的在於使處理容器内之電漿密度分度均等 【發明内容】 為達成此種目的，本發明之電漿處理裝置包含載置被處 理物之載置台、收容該載置台之處理容器、放射用波導管 中形成有槽之複數之波導槽天線係被配置於與放射用波導 管:軸線方向正交之寬度方向成—整列而且被配置成與載 置台相對向之天線陣列、以及被連接於放射用波導管之— 端而將微波分配予每—個之分配器；其特徵在於：此分配 器包含延伸於波導槽天線之寬度方向之饋電用波導管、以 及連通形成於該饋電用料管之壁面之放射用料管與饋 電用波導管之開口。 、=配H中’由於若使用與所有之波導槽天線之放射用 波導管之寬度之總和相同之長度（軸線方向之長度）之饋電 用波導管即可’因此’即使增加構成天線陣列之：導二 線之數量並加大開口面積。裝置構造不會如同以往之：波 分配器930-般複雜化且大型化。此外，波導槽天線之數量 103464.doc 1309961 係2以外之|f形，#能夠僅利用調整饋電用波導管之長度 以因應之。 & 關於此電漿處理裝置，於與饋電用波導管之載置台相對 向之土面形成有槽亦可。如此一來由饋電用波導管即 構成波導槽天線。 此外’分配器若係進—步包含從與上述開口相對向之饋 電用波V e之壁面朝向開口突出，並將傳播饋電用波導管 之微波往放射用波導管誘導之誘導壁者亦可。 而且’天線陣列分別設置於饋電用波導管之兩側亦可。 β再二&電漿處理裝置若係包括僅被配置於放射用波導 官之管内之包含電介質之慢波(Slow wave)材料者亦可。笋 ^於放射用波導f之管内配置慢波材料，放射用波導管之 &内之相對介電常數(Relative Permittivity)變成大於卜而 ==管之管内波長變短。由於放射用波導管之槽係 早變：S内波長之特定間隔所配置’因&，由於管内波 ^管中隔亦變短，變成能夠於相同長度之放射用波 ，：:成較以往更為多數之槽。從而’由於處理容器内 二二乂往更小之微波被以較以往更短之間隔供應，因 波導管之此外，糟由不於放射用 内配置慢波材料，使其維持中空之原 料小放射用波導管之時，並縮小供應電力。 ' 有波材料若於放㈣波導管之—端側之端部具 波導f之、^ a *放射用波導管與饋電用 邊界之"電常數（Permittivity)之變化變為緩和’ 103464.doc -12- 1309961 於此邊界之微波之反射被降低。 〇卜’關於上述電漿處理裝置’亦得設計成將放射用波 導官之寬度訂為饋電用波導管之管内波長之大約1/2，以盘 饋電用波導管之管内浊具士的如门 ’、 吕内波長大約相同之間隔配置放射用波導Further, other purposes are to suppress the manufacturing cost of the plasma processing apparatus. Further, another object is to equalize the plasma density index in the processing container. SUMMARY OF THE INVENTION In order to achieve the object, the plasma processing apparatus of the present invention includes a mounting table on which a workpiece is placed, and the mounting table is accommodated. The waveguide groove antenna in which the plurality of grooves are formed in the processing container and the radiation waveguide is disposed in an antenna array that is aligned with the width direction of the radiation waveguide in the axial direction and is disposed to face the mounting table. And a distributor that is connected to the end of the radiation waveguide to distribute the microwave to each of the distributors; wherein the distributor includes a waveguide for feeding extending in a width direction of the waveguide antenna, and the communication is formed The opening of the radiation tube and the feeding waveguide of the wall of the feeding tube. , in the case of H, because the waveguide for the same length (the length in the axial direction) of the sum of the widths of the radiation waveguides of all the waveguide antennas can be used, so that even the antenna array is increased. : The number of the second line is increased and the opening area is increased. The structure of the device is not as complicated as the conventional one: the wave distributor 930 is large and large. In addition, the number of waveguide slot antennas 103464.doc 1309961 is other than 2 |f-shaped, # can only be adjusted by adjusting the length of the feeding waveguide. & Regarding this plasma processing apparatus, a groove may be formed in the soil surface facing the mounting table of the power feeding waveguide. In this way, the waveguide for the feed constitutes the waveguide antenna. Further, if the 'dispenser is inserted, the step includes protruding from the wall surface of the feeding wave Ve opposite to the opening toward the opening, and the microwave for propagating the feeding waveguide is induced to the radiation waveguide. can. Further, the antenna arrays may be disposed on both sides of the power feeding waveguide. The β-repeat & plasma processing apparatus may include a slow wave material including a dielectric which is disposed only in the tube of the radiation waveguide. The slow-wave material is disposed in the tube of the waveguide f for radiation, and the relative permittivity (Relative Permittivity) in the & is becoming larger than the wavelength of the tube in the tube. Since the groove of the radiation waveguide is prematurely changed: the specific interval of the wavelength in the S is set to 'cause', since the tube inner tube is also shortened, it becomes a radiation wave of the same length, and is: More slots. Therefore, since the microwaves in the processing container are supplied to the smaller microwaves at shorter intervals than in the past, the slow-wave materials are not disposed in the radiation, so that the hollow materials are kept small. When using a waveguide, reduce the supply of electricity. 'When the wave material is placed on the end of the waveguide, the end portion of the waveguide has a waveguide f, and the change of the "Permittivity" of the radiation waveguide and the feed boundary becomes easing. 103464. Doc -12- 1309961 The reflection of the microwave at this boundary is reduced. 〇 ' 'About the above-mentioned plasma processing apparatus' is also designed to set the width of the radiation waveguide official to about 1/2 of the wavelength of the tube for the feeding waveguide, to turbidity in the tube of the disk feeding electric waveguide Radiation waveguides are arranged at approximately the same wavelength as the gates

官之壁面所形成之開口，並利用—個開口，使相鄰之2個放 射用波導管連通至饋電用波導管。如此…微波將以相 同位相從饋電用波導管被導人每—個之放射用波導管。 、此外，若係包括被配置成互相大致平行之2片之導體板、 以及延伸於此等2片之導體板之間而分隔藉由2片之導體板 所形成之空間之包含導體之分隔構件，且放射用波導管與 饋電用波導管係由2片之導體板與分隔構件所形成者亦可。 再者’上述之電漿處理裝置’若係包含產生微波之微波 產生器、將從該微波產生器、所輸出之微波引導至镇電用波 導官之微波波導管、以及使設置於該微波波導管之電源側 與負荷側之阻抗（impedance)匹配之阻抗匹配器（impedance matcher)者亦可。藉由使阻抗匹配，能夠抑制於微波波導管 與饋電用波導管之連接部之微波之反射。 此處，阻抗匹配器亦得利用設置於饋電用波導管與微波 波導管之連接部附近之縮小微波波導管之管路之隔膜 (Iris)以構成之。 此外，上述之電漿處理裝置亦得為包含複數之微波供應 裝置者，其中，此微波供應裝置包含天線陣列、分配器、 以及供應微波至該分配器之微波產生器。如此一來，即能 夠使用低輸出之微波產生器。 103464.doc -13· 1309961 此處，亦得將2個微波供應裝置配置成各自所包含之放射 用波導管之另一端係相對向，而且，形成於各自所包含之 放射用波導管之槽係排列於同一直線上。如此一來’即能 夠維持槽配置之規則性。 此外，若係包含阻塞處理容器之天線陣列側端部之電介 質板、以及以延伸於與相鄰之複數之天線陣列之邊界相對 向之方式且支撐電介質板之補強構件者亦可。An opening formed by the wall of the official, and an opening is used to connect the adjacent two transmitting waveguides to the feeding waveguide. In this way, the microwave will be guided by the waveguide for the same phase from the feeding waveguide. Further, if it comprises two conductor plates which are arranged substantially parallel to each other, and a conductor member which is disposed between the two conductor plates and which separates the space formed by the two conductor plates, the conductor-containing partition member Further, the radiation waveguide and the power feeding waveguide may be formed by two conductor plates and a partition member. Furthermore, the above-mentioned plasma processing apparatus includes a microwave generator that generates microwaves, a microwave waveguide that guides the microwave generated from the microwave generator to the output waveguide, and a microwave wave that is disposed in the microwave wave. An impedance matcher that matches the impedance of the power supply side of the conduit to the load side may also be used. By matching the impedance, it is possible to suppress reflection of microwaves at the connection portion between the microwave waveguide and the power feeding waveguide. Here, the impedance matching device is also constituted by a diaphragm (Iris) which is provided in the vicinity of the connection portion between the power feeding waveguide and the microwave waveguide and which narrows the microwave waveguide. Furthermore, the plasma processing apparatus described above may also be comprised of a plurality of microwave supply devices, wherein the microwave supply apparatus includes an antenna array, a distributor, and a microwave generator that supplies microwaves to the dispenser. In this way, a low output microwave generator can be used. 103464.doc -13· 1309961 Here, it is also necessary to arrange two microwave supply devices so that the other ends of the radiation waveguides included are opposed to each other, and are formed in the groove system of each of the radiation waveguides included Arrange on the same line. In this way, the regularity of the slot configuration can be maintained. Further, the dielectric plate including the end portion of the antenna array blocking the processing container and the reinforcing member extending to the boundary of the adjacent plurality of antenna arrays and supporting the dielectric plate may be used.

再者，上述之電漿處理裝置，若形成於放射用波導管之 槽之數量係因該放射用波導管被配置於天線陣列内之位置 而異者亦可。 例如，僅於除了與藉由組合所有之放射用波導管所形成 之載置台相對向之平面之中央部分以外之區域形成槽亦可 。如此一來，由於微波係從與載置台相對向之平面之中央 部分供應，因此，能夠抑制於載置台之中央部分之上部空 間之電漿產生。通常’由於電漿具有於載置台之中央部分 之上部空間變成高密度之傾向，因此，藉由抑制於此空間 之電漿產生，能夠使電漿密度之分布均等化。 此處，分配器亦得設計成如同槽之數量少之放射用波導 官供應小量電力。如此一來，關於槽之數量少之放射用波 導官，能夠降低未從槽被放射之電力之損失。 此外’關於上述之電漿處縣置，亦得設計錢導槽天 線係從槽供應圓形極化波（CireulaHy pQlaHzed物啦處 :容器之内部。如此一來，由於電場在與放射用波導管之 曰所形成之平面平行之面内（In咖_生旋轉，因此，於 103464.doc 14- 1309961 此面内能夠形成時間平均且均等之電聚。再者 成波導槽天線以及分配器係從槽供應圓形極化波至 器之内部。 王慝理谷 、：外，本發明係一種電漿處理方法，其係利用 導官中形成有槽之複數之波導槽天線被配 / 導管之轴線方向正交之寬度方向成一整列之天=射用波 波供應至處理容器内，且利用藉由被供應至處理容 微波所產生之電漿處理被收容於處理容器内 被處理物者，装牲抖, D上之 #《特録於：將微波供應至構成分配器 =波導管：介由形成於饋電用波導管之側壁之複數= 導個放射用波導管，且介由形成於放射用波 導g之槽將试波供應至處理容器内。 關於此電漿處理方法’僅於放射用波導管之管内配 含電介質之4 -置·匕· 數槽之間隔亦可/短於放射用波導f所形成之複 ::外，亦传設計成將2片之導體板配置成互相大致 伸於2片之導體板之間之包含導體之分隔構件分 之導體板所形成之空間，再由2片之導體板與分 /成放射用波導管與饋電用波導管者。 此外’亦得使用包含長# @ κ,、 天線陣列、分配器、以及將微波供 …刀配器之微波產生器之複數之微波供應裝置。 亦得設計成僅於除了與藉由組合所有之放射用波 形成槽。 子向之平面之中央部分以外之區域 I03464.doc 1309961 再者’亦得設計成將天料列配置於處理容ϋ之外部， 7用電介質板阻塞處理容器之天線陣列側端部，於使 陣列與該電介質板接觸之狀態下控制天線陣列之溫度。 此外，本發明之平面顯示裝置 置之表绝方法，其特徵在於 使用上述之電漿處理方法， 、被處理物上進行蝕刻、灰化 、以及CVD之中至少一種之處理。 【發明之效果】 如上述之說明，根據本發， η精由使用包含延伸於供應 微波至處理容器内之波導槽 守倌天綠被配置成一整列之方向之 饋電用波導管、以及連通油邕描 ,導槽天線之放射用波導管與饋 電用波導管之開口之分配哭 ^ 刀配器，旎夠抑制增加構成天線陣列 之波導槽天線之數景# +丄0日 加大開口面積時之裝置構造之複雜 匕以及大型化，而且，擴大裝置構造之設計自由度。 此外’藉由㈣電用波導管之與載置台相對向之壁面形 成槽，由於變成不需要僅具有分配器作用之構件，因此， 能夠將裝置構造更加簡單化以及小型化。 再者肖由於放射用波導管之管内配置慢波材料，能夠 於相同長度之放射用波導管形成較以往更為多數之槽。如 此—來，由於較以往更小電力之微波係以較以往為短之間 隔被供應至處理容器内，因此，能夠將電漿之分布均等化 。此外’藉由使鎖電用波導管之管内維持中空之原狀，即 無須縮小鎮電用波導管之，且縮小供應電力。從而， 分配器能夠分配微波之波導槽天線之數量不變，亦不會限 制裝置構造之設計自由度。 I03464.doc -16 - 1309961 此外，由於藉由將放㈣波導管之寬度訂為饋電用波導 管之管内波長之大約1/2’以與饋電用波導管之管内波長大 約相同之間隔配置放射用波導管之壁面所形成之開口，微 波將以相同位相從饋電用波導管被導入每一個之放射用波 導管，因此，能夠使槽之配置於所有之波導槽天線均變成 相同。 而且，利用被配置成互相大致平行之2片之導體板、以及 分隔就由此等之2片之導體板所形成之空間之分隔構件形 成放射用波導管與饋電用波導管，以天線覆蓋處理容 開口部將變為容易。 ° 再者’藉由於將微波產生器所輸出之微波引導至饋電用 波導管之微波波導管設置阻抗匹 ^ 此夠抑制於微波波 導管與饋電用波導管之連接部之微 做及之反射’而將微波有 效率地導入饋電用波導管。 此外，藉由設置複數之包含天複、八 人踝分配器、以及微波產 生器之微波供應裝置，使用低輪出之微波產生器將變為可 能。由於微波產生器之輸出電力變得愈大，價格變得特別 高，因此，藉由使用複數之低輸出且價格便宜之微波產生 器，能夠降低電漿處理農置全體之製造成本。 而且，藉由備置阻塞處理容器之天線陣列側端部之電介 質板、以及支撐電介質板之補強構件’並使該補強構件以 與相鄰之複數之天線陣列之邊界相對向之方式而延伸，由Further, in the above-described plasma processing apparatus, the number of grooves formed in the radiation waveguide may be different depending on the position in which the radiation waveguide is disposed in the antenna array. For example, the groove may be formed only in a region other than the central portion of the plane opposite to the mounting table formed by combining all of the radiation waveguides. In this manner, since the microwave system is supplied from the central portion of the plane facing the mounting table, it is possible to suppress the generation of plasma in the upper portion of the central portion of the mounting table. In general, since the plasma tends to have a high density in the upper space of the central portion of the mounting table, the plasma density distribution can be equalized by suppressing the generation of plasma in this space. Here, the dispenser is also designed to supply a small amount of power as a radiation waveguide with a small number of slots. As a result, the radiation director who has a small number of slots can reduce the loss of power that is not radiated from the slots. In addition, regarding the above-mentioned plasma station, it is also necessary to design a money channel antenna to supply circular polarized waves from the groove (CireulaHy pQlaHzed object: the inside of the container. As a result, due to the electric field in the waveguide with the radiation The plane formed by the parallel plane is parallel (In coffee-spinning, therefore, time-averaged and uniform electro-convergence can be formed in the plane of 103464.doc 14-1309961. Further, the waveguide-slot antenna and the distributor are The slot supplies a circularly polarized wave to the inside of the device. The present invention is a plasma processing method which utilizes a waveguide slot antenna formed with a plurality of slots in the guide to be aligned with the axis of the catheter. Orthogonal width direction in a row of days = the application wave is supplied into the processing container, and the object to be processed in the processing container is treated by the plasma generated by the microwave supplied to the processing chamber. , D上之# "Specially recorded in: supplying microwaves to form a distributor = waveguide: through a plurality of sidewalls formed on the side wall of the feeding waveguide = guiding a waveguide for radiation, and forming a waveguide for radiation g slot will try It is supplied to the processing container. The plasma processing method 'only the space between the 4 - 匕 · 数 number of the dielectric containing the dielectric in the tube for the radiation waveguide can also be shorter than the radiation waveguide f: In addition, it is also designed to arrange two conductor plates so as to extend substantially perpendicular to each other between the conductor plates of the two conductor plates, and the conductor plates formed by the partition members of the conductors are separated by two conductor plates and points/ For the radiation waveguide and the feeder waveguide, it is also necessary to use a microwave supply device including a long #@ κ, an antenna array, a distributor, and a microwave generator for supplying microwaves to the knife. It is designed to form grooves only by combining all the radiation waves. Areas other than the central portion of the plane of the sub-direction I03464.doc 1309961 Furthermore, it is also designed to arrange the sky column outside the processing capacity. 7 is configured to block the side end portion of the antenna array of the processing container with a dielectric plate, and control the temperature of the antenna array in a state in which the array is in contact with the dielectric plate. Further, the flat display device of the present invention is characterized by In the above-described plasma processing method, at least one of etching, ashing, and CVD is performed on the object to be processed. [Effects of the Invention] As described above, according to the present invention, η The waveguide for supplying microwaves to the waveguide in the processing container is arranged in a row of feeding waveguides, and the oil is ported, and the distribution of the radiation waveguides of the channel antennas and the openings of the feeding waveguides Weeping ^ knife adapter, it is enough to suppress the increase of the number of frames of the waveguide slot antenna that constitutes the antenna array. The structure of the device is increased and the size of the device is increased, and the design freedom of the device structure is expanded. By forming a groove in the wall surface of the electric waveguide with respect to the mounting table, since it is not necessary to have a member having only a distributor function, the structure of the device can be simplified and miniaturized. Further, since the slow wave material is disposed in the tube of the radiation waveguide, a larger number of grooves can be formed in the radiation waveguide of the same length. As a result, since the microwave system of smaller electric power is supplied to the processing container at a shorter interval than in the past, the distribution of the plasma can be equalized. In addition, by keeping the inside of the tube for the power lock waveguide hollow, it is not necessary to reduce the power supply waveguide and to reduce the supply of electric power. Thus, the number of waveguide slot antennas in which the distributor can distribute the microwaves is constant, and the design freedom of the device configuration is not limited. I03464.doc -16 - 1309961 In addition, since the width of the discharge (four) waveguide is set to be approximately 1/2' of the wavelength of the tube of the feed waveguide to be approximately the same interval as the wavelength of the tube of the feed waveguide The opening formed by the wall surface of the radiation waveguide is introduced into the radiation waveguide of the same phase from the power feeding waveguide. Therefore, the arrangement of the grooves can be made uniform for all of the waveguide antennas. Further, the radiation waveguide and the power feeding waveguide are formed by the conductor plates of the two conductor plates which are arranged substantially parallel to each other and the space formed by the conductor plates which are separated by the two, and are covered with the antenna. It will become easier to handle the opening. ° Furthermore, by setting the impedance of the microwave waveguide guided by the microwave generator to the waveguide for the feeding waveguide, it is possible to suppress the micro-connection of the connection between the microwave waveguide and the feeding waveguide. The reflection 'passes the microwave efficiently into the waveguide for feeding. In addition, it is possible to use a low-round microwave generator by providing a plurality of microwave supply devices including a Tianfu, an eight-person distributor, and a microwave generator. Since the output power of the microwave generator becomes larger and the price becomes extremely high, the manufacturing cost of the entire plasma processing plant can be reduced by using a plurality of microwave generators having a low output and being inexpensive. Further, by providing a dielectric plate for blocking the side end portion of the antenna array of the processing container, and a reinforcing member ‘supporting the dielectric plate, and extending the reinforcing member so as to oppose the boundary of the adjacent plurality of antenna arrays,

於微波不會從天線陣列之谱κA 邊界被放射，因此，能夠減小對 於微波之補強構件之影響。 103464.doc 1309961 ^外’經由僅於除了與藉由組合所有之 =之載置台相對向之平面之中央部分以外之區域形:: 產生：在電漿密度高之载置台之中央部分之上部空間電漿 又到抑制，因此，能夠使電製密度之分布均等化 此處，藉由如同槽之數量少之放射用波導管供應小量電 ’關於槽之數量少之放㈣波導管，能夠降低未從槽被 射之電力之損失’且有效率地產生電漿。 ^The microwave is not radiated from the spectral κA boundary of the antenna array, and therefore, the influence on the reinforcing member of the microwave can be reduced. 103464.doc 1309961 ^External" is formed by a region other than the central portion of the plane opposite to the mounting table by combining all of them =: Produced: in the upper part of the central portion of the mounting table with high plasma density The plasma is again suppressed, so that the distribution of the electric density can be equalized, and the small amount of electric power can be reduced by supplying a small amount of electric energy to the radiation waveguide with a small number of slots. The loss of power that is not emitted from the slot' and the plasma is efficiently generated. ^

而且’藉由將圓形極化波從槽供應至處理容器之内部， 由於電場在與形成有槽之平面平行之面内產生旋轉，因此 ’於此面内能夠形成時間平均且均等之電漿。從而，藉由 與形成有槽之平面平行之方式配置被處理物，能夠於㈣ 理物之表面實施均等之處理。 此外，藉由在使天線陣列與阻塞處理容器之端部之電介 =接觸之狀態下進行天線陣列之溫度控制，能夠調整電 介質板之溫度。例如’ #由冷卻天線陣列，能夠防止由於 電漿熱流（Heat flow)所造成之電介質板之破損。而且，藉 由加熱天線陣列，能夠防止對於電介質板之沉積 (Deposition)。 【實施方式】 以下，就本發明之實施之型態，參照圖式詳細說明之。 再者，於以下之圖式中，關於與圖29以及圖3〇所揭示之構 成要素相當之構成要素’係使用與圖29以及圖3〇相同之符 號表示，適當地省略其說明。 (第1之實施之型態） 103464.doc •18· 1309961 之型態之電漿處理裝 2係圖1所示之電漿處 圖1係揭示關於本發明之第1之實施 置之全體構造之縱剖面圖。此外，圖 理裝置之-部分之構造之橫剖面圖。再者，於此等之圖式 中，利用功能方塊表示一部分之構成要素。Moreover, by supplying a circularly polarized wave from the groove to the inside of the processing container, since the electric field is rotated in a plane parallel to the plane in which the groove is formed, a time-averaged and uniform plasma can be formed in this plane. . Therefore, by arranging the objects to be processed in parallel with the plane in which the grooves are formed, it is possible to perform uniform processing on the surface of the (IV). Further, by controlling the temperature of the antenna array in a state where the antenna array is brought into contact with the end portion of the occlusion processing container, the temperature of the dielectric plate can be adjusted. For example, 'by cooling the antenna array, it is possible to prevent breakage of the dielectric plate due to plasma heat flow. Moreover, by heating the antenna array, deposition of the dielectric plate can be prevented. [Embodiment] Hereinafter, the form of implementation of the present invention will be described in detail with reference to the drawings. In the following description, the constituent elements corresponding to the constituent elements disclosed in Figs. 29 and 3B are denoted by the same reference numerals as those in Figs. 29 and 3, and the description thereof will be appropriately omitted. (Formulation of the first embodiment) 103464.doc • 18·1309961 Type of plasma processing apparatus 2 is a plasma part shown in Fig. 1. Fig. 1 discloses the entire structure of the first embodiment of the present invention. Longitudinal section view. Further, a cross-sectional view of the construction of the portion of the graphic device. Further, in the drawings, a part of the constituent elements are represented by functional blocks.

圖1所示之電t處理裝置’包含載置LCD基板3等作為被 處理物之載置台2、收容載置台2之平面視方形之有底筒狀 之處理容器1、阻塞處理容m之上部開口之電介f板8、以 及"由電介負板8將微波從外部供應至處理容器丨内之微波 供應裝置5G。此處，微波供應裝置5()係包含波導槽天線陣 列10、微波分配器30、微波波導管41、以及微波產生器42。 如圖2所示，波導槽天線陣列1 〇包含複數之波導槽天線 H)A、10B、l〇c、i〇D、观、1()F、㈣、1GH。波導槽天 線10A〜10H係於包含方形波導管之放射用波導管之η面形 成有複數之放射用槽u之天線。於放射用波導管之一端形 成有饋電用槽（開口）12，另一端則被短路。此種波導槽天 線1〇A〜1〇H係於使形成有放射用槽11之放射用波導管之H 面與載置台2相對向之狀態下，被配置於與放射用波導管之 軸線方向（微波之進行方向）正交之寬度方向成一整列。 波導槽天線10A〜10H之放射用波導管之管内配置有包含 電介質之慢波材料21。若將慢波材料21之相對介電常數訂 為sr (>1)，放射用波導管之管内中空時之管内波長訂為入^ ，則配置有慢波材料2 1時之管内波長訂為kg變成 •⑴ 再者，具有饋電用槽12之一側之慢波材料21之端部形成有 103464.doc •19- 1309961 斜坡21A，以便厚度緩慢地變化。 而且，於放射用波導管之管内，被短路之另一端之附近 配置有微波吸收材料22。再者，微波吸收材料22並非一定 必要者。 作為放射用槽11，係使用放射圓形極化波之交叉槽（Cross slot)。交叉槽具有成對之2個之槽於兩者之中心交叉之構造 ，並以從每一個槽所放射之電場之大小相等，位相相差9〇。 ’極化波方向正父之方式配置。例如，放射用波導管内之 相對介電常數ει·為3.6之情形，將2個之槽之長度分別訂為 2.94 cm、3.19 cm，使該2個之槽互相交又成大約直角，而 以對於放射用波導管之軸線傾斜大約45。之方式配置。或者 ，將2個之槽之長度分別訂為2·80cm、3 83 cm，使該2個之 槽互相以大約107。之角度交又，而以對於放射用波導管之 軸線傾斜大約36.5。之方式配置亦可。包含此種交叉槽之複 數之放射用槽11，於本實施之型態中，係以大約&之自然 數倍之間隔被配置於對於放射用波導管之中心軸之一側。 此外，微波分配器30係於包含方形波導f之饋電用波導 用管：(與電場平行之較狹窄之側壁)形成有複數之饋電 用槽（開口）12者。饋電用波導呈 V g八有與波導槽天線1 0 A〜10H 之放射用波導管之寬度之總 用波導管之E面所形成之…1長度猎由將於饋電 Λ 成複數饋電用槽（開口）12、與於放射 用二導管之-端所分別形成之鎮電用槽12方式 通則::用;導管與放射用波導管係藉由饋電用槽二 貝电用槽12係'以微波被均等地供應至所有之放 103464.doc -20- 1309961 射用波導管之方式而被調整。 饋電用波導管中’於與形成有.饋電用槽12之E面相對向之 E面之中央部分形成有開口 3卜此開口31係介由包含矩形波 導管之微波波導管41而與產生頻率為例如2_45 之微波 產生器42相連接。微波波導管41之管内，於與饋電用波導 管之連接部附近（例如’距離饋電用波導管之中心軸線管内 波長之1/4程度之位置）設置有隔膜43。隔膜43係由從微波波 導管41之左右之側壁垂直地突出之壁面所構成，藉由調整 微波波導管41之管路之寬度，能夠使微波波導管41之電源 侧與負荷側之阻抗匹配。 此外，於饋電用波導管之管内，從形成有開σ312Ε面朝 向饋電用槽12之寬度方向之中心垂直地突出之誘導壁32， 係延伸於上下之Η面之間。誘導壁32之突出長度訂為饋電用 波導管之寬度之1/5程度。於饋電用波導管之管内並未配置 慢波材料，而變成中空。 、再：，若將饋電用料管之管内波長訂為,g〇，則放射用 波導管之寬度係被形成為大約λ§()/2。因此，饋電用槽邮 係以大約Xg()/2之間隔所形成。從而，變成微波係介由饋電 用槽12從饋電用波導管以相反位相而被供應至相鄰之放射 用波導管。因Λ ’相鄰之波導槽天線之放射用利係被配 置於偏離放射用波導管之軸線方向大約^/2程度之位置， 以便相同旋轉方向 < 圓形極化波從波導槽天線1GA〜10H之 所有之放射用槽11而被放射。 本實施之型態中，波導槽天線l〇A〜10H之放射用波導管 103464.doc -21 - 1309961 以及微波分配器30之饋電用波導管係藉由以下方式所形成 :利用被言曼置於足巨離側壁15大約λ§〇/2程度之位置且與側壁 15、17平行之分隔板19，將由相互分開而被配置成平行之 平面視方形之2片之平板13、14、以及連接此等之平板。 、14之周緣部之包含側壁15、16、17、此箱體之内部加 以分隔，並利用被設置成與側壁16、18平行之7個之分隔板 2〇，以大約Xg〇/2之間隔，將被分隔板丨9與側壁丨7夾在中間 之區域加以分隔。再者，平板13、14、側壁i5〜i8、以及分 隔板19、20係由銅等之導體所形成。 此情形，平板13、14分別變成所有之放射用波導管以及 饋電用波導管之Η面；側壁15變成饋電用波導管之一側之e 面；分隔板19變成饋電用波導管之另一側之£面，且為所有 之放射用波導管之一侧端面；側壁17變成所有之放射用波 導管之另一側端面；侧壁16、18之個別之一部分變成饋電 用波導管之兩側端面；側壁丨6、丨8之個別之其他部分與分 隔板20則變成放射用波導管之E面。而且，於側壁^之中央 部形成有開口 31，於分隔板19則形成有複數之饋電用槽12 此外，於與載置台2相對向之平板14形成有複數之放射用 槽11。 關於如同以上之構造之電漿處理裝置，若驅動微波產生 器42，則微波將介由微波波導管4丨從微波分配器3 〇之開口 31被導入微波分配器30之饋電用波導管之管内。微波波導 管41之管内設置有隔膜43，由於已經過阻抗匹配，因此， 於微波波導管41與饋電用波導管之連接部之微波之反射受 103464.doc -22- 1309961 到抑制。 從饋電用波導管之中央部導入管内之微波係分歧為二， 且朝向饋電用波導管之^側端面傳播。而且，被於微波之 進行方向以大約λ§()/2之間隔所設置之誘導 波導槽天線1〇Α〜1〇Η之每一個之放射用波導管。 邊於配置有慢波材料2 1 破導入放射用波導管之微波The electric t-processing apparatus shown in Fig. 1 includes a mounting table 2 on which an LCD substrate 3 or the like is placed, and a bottomed cylindrical processing container for accommodating the mounting table 2, and an upper portion of the blocking processing capacity m. The open dielectric plate 8 and " microwaves are supplied from the outside to the microwave supply device 5G in the processing container by the dielectric negative plate 8. Here, the microwave supply device 5() includes a waveguide array antenna array 10, a microwave distributor 30, a microwave waveguide 41, and a microwave generator 42. As shown in FIG. 2, the waveguide slot antenna array 1 includes a plurality of waveguide slot antennas H) A, 10B, l〇c, i〇D, Guan, 1 () F, (4), 1 GH. The waveguide groove antennas 10A to 10H are antennas in which a plurality of radiation grooves u are formed on the n-plane of the radiation waveguide including the square waveguide. A feed slot (opening) 12 is formed at one end of the radiation waveguide, and the other end is short-circuited. In the state in which the H-plane of the radiation waveguide in which the radiation groove 11 is formed is opposed to the mounting table 2, the waveguide antennas 1A to 1H are disposed in the axial direction of the radiation waveguide. (the direction in which the microwaves proceed) is orthogonal to the width direction of an entire column. The slow wave material 21 containing a dielectric is disposed in the tube of the radiation waveguide of the waveguide antennas 10A to 10H. If the relative dielectric constant of the slow-wave material 21 is set to sr (>1), the intra-tube wavelength in the hollow tube of the radiation waveguide is set to ^, and the intra-tube wavelength when the slow-wave material 2 1 is disposed is set as Kg becomes (1) Further, the end portion of the slow wave material 21 having one side of the feeding groove 12 is formed with 103464.doc • 19 - 1309961 slope 21A so that the thickness changes slowly. Further, in the tube for the radiation waveguide, the microwave absorbing material 22 is disposed in the vicinity of the other end to be short-circuited. Further, the microwave absorbing material 22 is not necessarily necessary. As the radiation groove 11, a cross slot that radiates a circularly polarized wave is used. The intersecting groove has a structure in which two pairs of grooves intersect at the center of the two, and the electric field radiated from each groove is equal in magnitude, and the phase difference is 9 〇. 'Polarized wave direction is configured in the way of the father. For example, in the case where the relative dielectric constant ει· in the radiation waveguide is 3.6, the lengths of the two grooves are set to 2.94 cm and 3.19 cm, respectively, so that the two grooves are mutually intersected at approximately a right angle, and The axis of the radiation waveguide is inclined at approximately 45. The way it is configured. Alternatively, the lengths of the two grooves are set to be 2.80 cm and 3 83 cm, respectively, so that the two grooves are approximately 107 each other. The angle is again, and is inclined by about 36.5 for the axis of the radiation waveguide. The configuration can also be. In the present embodiment, the radiation grooves 11 including the plurality of intersecting grooves are disposed on one side of the central axis of the radiation waveguide at intervals of a natural multiple of & Further, the microwave distributor 30 is a tube for feeding waveguide including a square waveguide f: (a narrow side wall parallel to the electric field) is formed with a plurality of feeding grooves (openings) 12. The waveguide for feeding is formed by the E-plane of the total waveguide with the width of the radiation waveguide of the waveguide slot antennas 10 A to 10H... 1 length hunting is to be fed into the complex feed The groove (opening) 12 and the electric power supply groove 12 formed at the end of the second duct for radiation are generally used: the conduit and the radiation waveguide are provided by the feeding slot 2 electric slot 12 The system is adjusted by means of microwaves being equally supplied to all of the 103464.doc -20-1309961 injection waveguides. In the waveguide for feeding, an opening 3 is formed in a central portion of the E surface facing the E surface on which the feeding groove 12 is formed. The opening 31 is formed by a microwave waveguide 41 including a rectangular waveguide. The microwave generators 42 that generate a frequency of, for example, 2 to 45 are connected. In the tube of the microwave waveguide 41, a diaphragm 43 is provided in the vicinity of the connection portion with the waveguide for feeding (e.g., at a position which is a quarter of the wavelength in the central axis of the waveguide for the power feeding). The diaphragm 43 is constituted by a wall surface that vertically protrudes from the left and right side walls of the microwave waveguide 41. By adjusting the width of the tube of the microwave waveguide 41, the impedance of the power supply side of the microwave waveguide 41 and the load side can be matched. Further, in the tube for the power feeding waveguide, the inducing wall 32 which protrudes perpendicularly from the center of the width direction of the feeding groove 12 formed with the opening σ312 is extended between the upper and lower jaw faces. The length of the induced wall 32 is set to about 1/5 of the width of the waveguide for feeding. The slow wave material is not disposed in the tube for the feeding waveguide, but becomes hollow. Further, if the wavelength inside the tube of the feeding tube is set to g〇, the width of the radiation waveguide is formed to be approximately λ § () /2. Therefore, the feed slot is formed at intervals of approximately Xg ()/2. Thereby, the microwave system is supplied to the adjacent radiation waveguide from the power feeding waveguide through the feeding channel 12 in the opposite phase. Because the radiation of the adjacent waveguide slot antenna is placed at a position that is about ^/2 from the axis of the radiation waveguide, so that the same rotation direction is < circularly polarized wave from the waveguide slot antenna 1GA~ All of the radiation grooves 11 of 10H are emitted. In the present embodiment, the waveguides 103464.doc-21/1309961 of the waveguide slot antennas 10A to 10H and the waveguides for the microwave distributor 30 are formed by the following means: a partitioning plate 19 placed at a position of about λ§ 〇/2 from the side wall 15 and parallel to the side walls 15, 17 will be arranged in parallel with two flat plates 13, 14 of a plan view square. And connect these tablets. The peripheral portion of the peripheral portion 15, 14 includes the side walls 15, 16, 17 and the interior of the casing is partitioned, and the partition plates 2 被 which are arranged in parallel with the side walls 16, 18 are used to be approximately Xg 〇 / 2 The space is separated by the area sandwiched between the partition plate 9 and the side wall 丨7. Further, the flat plates 13, 14 and the side walls i5 to i8 and the partition plates 19 and 20 are formed of a conductor such as copper. In this case, the flat plates 13, 14 become the kneading surfaces of all the radiation waveguides and the feeding waveguides respectively; the side wall 15 becomes the e-plane on one side of the feeding waveguide; the partitioning plate 19 becomes the feeding waveguide The other side is the side face of one of the radiation waveguides; the side wall 17 becomes the other end face of all the radiation waveguides; the individual part of the side walls 16, 18 becomes the feed wave Both end faces of the duct; the other portions of the side walls 丨6, 丨8 and the partition plate 20 become the E-face of the radiation waveguide. Further, an opening 31 is formed in the center portion of the side wall ^, and a plurality of feeding grooves 12 are formed in the partitioning plate 19. Further, a plurality of radiation grooves 11 are formed in the flat plate 14 facing the mounting table 2. With regard to the plasma processing apparatus of the above configuration, when the microwave generator 42 is driven, microwaves are introduced into the feeding waveguide of the microwave distributor 30 via the microwave waveguide 4 from the opening 31 of the microwave distributor 3 Inside the tube. The diaphragm 43 is provided in the tube of the microwave waveguide 41. Since the impedance matching has been performed, the reflection of the microwave at the connection portion between the microwave waveguide 41 and the feeding waveguide is suppressed by 103464.doc -22-1309961. The microwave system introduced into the tube from the central portion of the power feeding waveguide has a divergence of two, and propagates toward the end surface of the feeding waveguide. Further, the radiation waveguide for inducing each of the waveguide antennas 1 〇Α 1 to 1 设置 is provided at intervals of λ § () / 2 in the direction in which the microwaves are conducted. Microwaves with a slow wave material 2 1 broken into the radiation waveguide

之管内傳播’―邊從H面所形成之複數放射用槽U緩慢地放 射’並透過電介質板8而被供應至處理容^内。此外，未 從放射用槽U放射而殘留之微波係被微波吸收材料22所吸 收。 电卞精甶破供應至處 =容器1内之氣體被離子化、激發、解離，並產生反應 活性種。利用此反應活性種，載置台2上之咖基板3之表 面上被施以蝕刻等之處理。 • 如上述，本實施之型態中 1〇Α 錢用在延伸於波導槽天線 Α〜Ι0Η被配置成一整列之方 ,,明电用夜導官之Ε面形 成硬數之饋電用槽12之構造 佶故石丄0曰 〈刀配益30。此分配器30,即 =加大開口面積而增加波導槽天線之數 所有之波導槽天線之放射用波導 、使用/、 之饋電用波導管即可，因此 门長度 、*八 衣罝構造不會如同以往之料 二分配_复雜化且大型化。此外，波導槽天 以外之情形，亦能夠僅利用調整饋電 / 因應之。因此，能夠抑制增吕之長度以 反蛉槽天線之數量且加大開 i03464.doc •23- 1309961 口面積時之裝置構造之複雜化以及大型化，而且，擴大寒 置構造之設計自由度。 再者，本實施之型態中，由於並無為了加大開 J 萌積而 加大波導槽天線之放射用波導管之剖面尺寸之必要，因此 ’月b夠使用單一模式之微波波導管作為放射用波導管，微 波之控制變為容易。 此外，由於並無於電介質板8内激起表面波之必要，因此 ，忐夠將電漿之分布均等化。再者，由於微波係從波導槽 天線10A〜10H之槽面往大約垂直方向放射，電漿表面垂直 方向之電場成份小，因此，能夠實現基板損壞與處理容器】 内之金屬污染少之低電子溫度電漿。 再者，藉由於微波波導管41内設置隔膜43，而使微波波 導管41之電源側與負荷側之阻抗匹配，於微波波導管Μ與 :電用波導管之連接部之微波之反射受到抑制，而能夠將 微波有效率地導入饋電用波導管。 此外，藉由於微波分配器30之饋電用波導管之管内設置 誘導壁32,將傳播饋電用波導管之微波介由饋電用槽二誘 導至波導槽天線1GA〜1GH之放射用波導管，能夠從鎖電用 波導管將微波有效率地供應至軸線方向正交之放射用 管。 而且’藉由於波導槽天線之故射用波導管之管 内=置慢波材料21，放射用波導管之管内波長變短，而基 於管内波長所設定之放射用#11之間隔亦變短。因此，能 夠於相同長度之放㈣波導f，形成較管内作成中空之情 103464.doc -24- 1309961 开y更為多數之放射用槽丨丨。從而，能夠於處理容器1内，以 短間隔供應較管内作成中空之情形更小電力之微波，且使 電漿分布之密度均等化。 再者，藉由於具有饋電用槽丨2之一側之慢波材料2丨之端 部形成斜坡21A，饋電用波導管與放射用波導管之邊界之從 二氣往電"質之介電常數（Permittivity)之變化變為缓和， 且於此邊界之微波之反射被降低。從而，能夠將微波有效 率地供應至放射用波導管。 此處，藉由不於微波分配器3〇之饋電用波導管之管内配 置慢波材料，而維持中空之原狀，則無將饋電用波導管之 口徑縮小，且縮小供應電力之必要。從而，分配器3〇能夠 分配微波之波導槽天線之數量不變，且不限制裝置構造之 設計自由度。 此外，藉由形成交又槽以作為放射用槽丨丨，並將圓形極 化波放射至處理容器！内’由於電場在與波導槽天線 10A〜10H之形成有放射用槽11之11面平行之面内產生旋轉 ，因此，於此面内產生時間平均且均等之電漿。從而，藉 由將LCD基板3配置成與形成有放射用槽1丨之η面平行，能 夠於LCD基板3之表面實施均等之處理。 再者，亦得如圖3所示之微波供應裝置15〇，使用八之字 型槽以作為放射圓形極化波之放射用槽丨〗丨。八之字型槽具 有一側之槽之延長線係交又於另一側之槽上或其延長線上 之構造，並以從每一個槽所放射之電場之大小相等，位相 相差90° ’極化波方向正交之方式而配置。 103464.doc -25- 1309961 此外，本實施之型態中，雖係、揭示於微波分配器％之饋 電用波導管之E面形成有開σ3ι與饋電用槽12之實例，但是 亦有於饋電用波導管之Η面形成有開口與饋電用槽之微波 分配器。此分配器得被使用以因應於放射用波導管之ε面形 成有複數之放射用槽之波導槽天線。 (第2之實施之型態） 關於本發明之第2之實施之型態之電聚處理裝置，係❹ 於波導槽天狀所有之放㈣波導管巾，以相同位相分配 微波之微波分配器者。 圖4係包s此微波分配器之微波供應裝置之橫剖面_， 此圖中’與圖2所揭示之構成要素相當之構成要素以與圖2 相同之符號表示’料，利用功能方塊表示一部分之構成 要素。 圖所TF之微波供應裝置25〇所具有之微波分配器咖，係 將微波供應至波導槽天線鳩、210B、210C、210D、210E F 210G、210H之放射用波導管之複數之開口 212以 大’勺XgQ之間隔於包含方形波導管之饋電用波導管之E面 (分隔板219)所形成者。再者，‘係饋電用波導管之管内波 長。由於放射用波導管之寬度為大約¥/2，因此，於相鄰 之個之放射用波導管之邊界區域分別形成開口 212，並利 用1個之開口川使相鄰之2個之放射用波導管與饋電用波 導管連通。 饋電用波導營φ . Τ 於與形成有開口 212之E面相對向之E 面之中央部形成右 ’開口 3 1 ’微波產生器42係介由微波波導 103464.doc -26 - 1309961 管“而與此開口 31相連接。再者，亦得於相鄰之2個之放射 用波導管之邊界區域之未形成有帛口212之部分之相對向 位置形成開口 31。此外，於饋電用波導管之端面形成開口 3 1亦可。 此外，於饋電用波導管之管内，設置有複數之從形成有 開口31之E面幸月向開口212之寬度方向之中心突出之誘導壁 232。誘導壁232之間隔亦與開口 212相同大約變成M〇。 再者，饋電用波導管之管内係中空、饋電用波導管之長 度與波導槽天線21GA〜21GH之放射用波導管之寬度之總和 相同、以及開口 212係以微波被均等地供應至所有之放射用 波導管之方式而調整之，與圖i以及圖2所示之微波.分配器 3 0相同。 另方面，關於波導槽天線210A〜210H，為使微波容易 導入相鄰之2個之放射用波導管，變成2個之放射用波導管 之邊界之E面（分隔板220)之開口 212側之前緣稍微後退。 藉由如此之構造，由於微波係以相同位相從微波分配器 230之饋電用波導管被導入波導槽天線21〇a〜2i〇h之放射 用波導管之每一個，因此，能夠使放射用槽11之配置於所 有之波導槽天線2 1 〇 A〜2 1 0H均變成相同。 (第3之實施之型態） 關於本發明之第3之實施之型態之電漿處理裝置，係使用 於波導槽天線陣列之形成有槽之面内，使微波之供應電力 具有分布（Distribution)之微波供應裝置者。 圖5係該试波供應裝置之橫剖面圖。此圖中，與圖2或圖4 103464.doc -27- 1309961 斤揭示之構成要素相當之構成要素以與圖2或圖*相同之符 號表示此外，利用功能方塊表示一部分之構成要素。 圖5所示之微波供應裝置35〇係與第2之實施之型態之微 波供應裝置250大體相同者。但是，關於本實施之型態，構 成天線陣列310之波導槽天線310A、310B、310C、310D、 310E、310F、310G、310H之放射用槽n之配置以及數量係 因該波導槽天線3 1〇Α~3 10H配置於天線陣列3 1〇内之位置 而異。更具體言之，於與藉由組合波導槽天線31〇a〜31〇h 所形成之載置台2相對向之平面之中央部分36〇並未配置有 放射用槽11，而僅於除了中央部分36〇以外之區域配置有放 射用槽11。此處，未配置有放射用槽u之部分36〇係與載置 台2之中央部分相對向。 處理容器1内之密度分布，具有若電漿變成穩定狀態 (Steady state)，則於載置台2之中央部分之上部空間變高之 傾向。由於若不於與載置台2之中央部分相對向之部分36〇 配置放射用槽11’則於電漿密度高之載置台2之中央部分之 上部空間’微波不會被放射，因此，於此空間之電毁產生 受到抑制。從而，能夠將電漿密度之分布均等化。 如上述，每一個波導槽天線之放射用槽U之數量不同之 情形’若將電力均等地分配至所有之波導槽天線之放射用 波導管’則關於放射用槽1 1之數量少之放射用波導管，未 仗放射用槽11被放射’最終為微波吸收材料2 2所吸收之電 力將增加。因此’調整微波分配器230之分配量，如同放射 用槽11之數量少之放射用波導管供應小量電力。如此一來 I03464.doc -28 - 1309961 ，將降低未從放射用槽丨丨被放射之電力之損失，且有效率 地產生電漿。此處，微波分配器230之分配量能夠藉由將微 波供應至放射用波導管之開口 212之大小、以及介由開口 2 12將微波誘導至放射用波導管之誘導壁之突出長度加以 調整。 再者，未配置有槽U之部分36〇之形狀既得為四角形亦尸 為圓形。 (第4之實施之型態） 關於本發明之第4之實施之型態之電漿處理裝置係組合 複數之微波供應裝置而使用者。 口 圖6係揭示組合複數之微波供應裝置而使用之情形之一 構造實例之圖式。此圖中，⑷係揭示波導槽天線陣列之形 成有放射用槽之平面’⑻係、揭示（a)之VIb-Vib，線方向之剖 面構造。再者，與圖2或圖4所揭示之構成要素相當之構: 要素以與圖2或圖4相同之符號表示。 組合複數之微波供應褒置25〇a、25〇b、25〇c、25()d、25()e 、25〇F而❹之情形’有必要使波導槽天線陣肋g之形成 有放射用槽11之平面連續。從而，如圖6⑷所示，微波供應 裝置2嫩與雇與2實係以天線陣列21()之側壁邮叫目 對向之方式而配置。關於微波供應裝置25〇〇與25肫與25吓 亦相同。此外，微波供應裝置25〇八與2遍係以天線陣列21〇 之側壁17雙方相對向之方式而配置。關於微波供應裝置 250B與 250E、250C與 250F亦相同。 放射用槽11於放射用波導管之軸線方向被形成一列之情 103464.doc -29- 1309961 形’微波供應裝置250A與250D係以每一個之放射用槽^排 列於同一直線上之方式而配置。關於微波供應裝置25〇B與 250E、250C與250F亦相同。如此一來，由於槽配置之規則 性被維持，因此’能夠將微波均等地供應至處理容器1内， 且產生均等之電漿。The in-tube propagation "- is slowly radiated from the plurality of radiation grooves U formed on the H-face" and is supplied through the dielectric plate 8 to be supplied into the processing chamber. Further, the microwave which is not radiated from the radiation groove U is absorbed by the microwave absorbing material 22. The electric 卞 卞 供应 供应 = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = With this reactive species, the surface of the coffee substrate 3 on the mounting table 2 is subjected to etching or the like. • As described above, in the version of the present embodiment, 1 钱 money is used to extend the waveguide slot antenna Α Ι Η 0 Η to be arranged in a whole column, and the electric power is used to form a hard feeding slot 12 by the surface of the night guide. The structure of the stone 丄 丄 曰 曰 刀 刀 刀 刀 刀 刀 刀The distributor 30, that is, the waveguide for increasing the aperture area and increasing the number of waveguide antennas, and the waveguide for use of the waveguide antenna, and the waveguide for use, can be used. Therefore, the length of the door and the structure of the occupant are not It will be as complex as the previous one, _ complicated and large. In addition, in the case of the waveguide slot, it is also possible to use only the adjustment feed/response. Therefore, it is possible to suppress the increase in the length of the casket antenna and the complication and enlargement of the device structure when the area of the sag antenna is increased, and to expand the design freedom of the chill structure. Furthermore, in the present embodiment, since it is not necessary to increase the cross-sectional size of the waveguide for the waveguide antenna in order to increase the J-emergence, the single-mode microwave waveguide can be used as the radiation. With the waveguide, the control of the microwave becomes easy. Further, since it is not necessary to excite the surface wave in the dielectric plate 8, it is sufficient to equalize the distribution of the plasma. Furthermore, since the microwave system radiates from the groove surface of the waveguide slot antennas 10A to 10H to the approximately vertical direction, the electric field component in the vertical direction of the plasma surface is small, so that the substrate can be damaged and the metal inside the processing container is low. Temperature plasma. Further, by providing the diaphragm 43 in the microwave waveguide 41, the impedance of the power supply side of the microwave waveguide 41 and the load side are matched, and the reflection of the microwave at the connection portion between the microwave waveguide Μ and the electrical waveguide is suppressed. The microwave can be efficiently introduced into the feeding waveguide. Further, by providing the induction wall 32 in the tube of the feeding waveguide of the microwave distributor 30, the microwave of the propagation feeding waveguide is induced to the radiation waveguide of the waveguide antenna 1GA to 1GH through the feeding slot 2 The microwave can be efficiently supplied from the power locking waveguide to the radiation tube whose axis direction is orthogonal. Further, the inside of the tube for the radiation waveguide is lowered by the waveguide channel antenna, and the wavelength of the radiation waveguide is shortened, and the interval of the radiation #11 set based on the wavelength in the tube is also shortened. Therefore, the waveguide (f) of the same length can be formed to form a hollower than the inside of the tube. 103464.doc -24- 1309961 Open a larger number of radiation slots. Therefore, it is possible to supply microwaves having a smaller electric power than the case where the inside of the tube is made hollow, and to equalize the density of the plasma distribution in the processing container 1 at a short interval. Further, since the end portion of the slow-wave material 2丨 having one side of the feeding groove 2 forms the slope 21A, the boundary between the feeding waveguide and the radiation waveguide is from the second gas to the electric The change in the dielectric constant (Permittivity) becomes gentle, and the reflection of the microwave at this boundary is lowered. Thereby, microwaves can be efficiently supplied to the radiation waveguide. Here, by disposing the slow-wave material in the tube of the power feeding waveguide of the microwave distributor 3, and maintaining the hollow shape, the diameter of the power feeding waveguide is not reduced, and the supply of electric power is reduced. Thus, the number of the waveguide slot antennas in which the distributor 3 can distribute the microwaves is constant, and the design freedom of the device configuration is not limited. In addition, by forming the intersection groove as the radiation groove, the circular polarization wave is radiated to the processing container! Since the electric field rotates in a plane parallel to the eleventh surface of the waveguide groove antennas 10A to 10H in which the radiation grooves 11 are formed, a time-averaged and uniform plasma is generated in the surface. Therefore, by arranging the LCD substrate 3 in parallel with the n-plane on which the radiation groove 1 is formed, it is possible to perform uniform processing on the surface of the LCD substrate 3. Further, as shown in Fig. 3, the microwave supply device 15A uses an eight-shaped groove as a radiation groove for radiating a circularly polarized wave. The eight-shaped groove has a structure in which the extension line of one side groove is connected to the groove on the other side or its extension line, and the electric field radiated from each groove is equal in magnitude, and the phases are different by 90°. The direction in which the directions of the waves are orthogonal is arranged. 103464.doc -25- 1309961 In addition, in the embodiment of the present invention, an example in which the opening σ3ι and the feeding groove 12 are formed on the E surface of the waveguide for the microwave distributor% is disclosed. A microwave distributor having an opening and a feeding groove is formed on the surface of the feeding waveguide. This distributor is used to form a waveguide slot antenna having a plurality of radiation grooves in response to the ε plane of the radiation waveguide. (Type 2 of the second embodiment) The electropolymerization apparatus of the second embodiment of the present invention is a microwave distributor which distributes microwaves in the same phase by placing all of the waveguides in the waveguide groove. By. Figure 4 is a cross-sectional view of the microwave supply device of the microwave distributor. In the figure, the components corresponding to the components disclosed in Fig. 2 are denoted by the same reference numerals as those of Fig. 2, and a part of the functional block is used to indicate a part. The constituent elements. The microwave distributor 25 of the TF of the present invention has microwaves supplied to the plurality of openings 212 of the waveguides of the waveguides 鸠, 210B, 210C, 210D, 210E F 210G, 210H to be large. The 'spoon XgQ' is formed by the E surface (separator 219) of the waveguide for the feed containing the square waveguide. Furthermore, it is the wavelength inside the tube of the power feeding waveguide. Since the width of the radiation waveguide is about ¥/2, an opening 212 is formed in each of the boundary regions of the adjacent radiation waveguides, and one of the adjacent radiation waves is used by one opening. The conduit is in communication with the feed waveguide. The feeding waveguide φ. 形成 forms a right opening 3 1 in the central portion of the E surface opposite to the E surface on which the opening 212 is formed. The microwave generator 42 is via the microwave waveguide 103464.doc -26 - 1309961 Further, the opening 31 is connected to the opening 31. Further, the opening 31 is formed at a position opposite to a portion of the boundary region of the adjacent two of the radiation waveguides where the opening 212 is not formed. Further, the end face of the waveguide may be formed with the opening 31. Further, in the tube for the power feeding waveguide, a plurality of the induction walls 232 protruding from the center of the width direction of the opening 212 of the E surface formed with the opening 31 are provided. The interval between the inducing walls 232 is also approximately the same as that of the opening 212. Further, the inner wall of the feeding waveguide is hollow, the length of the feeding waveguide and the width of the waveguide for the waveguide antennas 21GA to 21GH are The sum is the same, and the opening 212 is adjusted in such a manner that the microwaves are equally supplied to all of the radiation waveguides, which is the same as the microwave. Distributor 30 shown in Figures i and 2. In addition, regarding the waveguide slot antenna 210A~210H, in order to make It is easy to introduce two adjacent radiation waveguides, and the front edge of the opening 212 side of the E surface (separator 220) which is the boundary of the two radiation waveguides is slightly retreated. With such a configuration, due to the microwave Each of the radiation waveguides of the waveguide antennas 21a to 2i〇h is introduced from the power feeding waveguide of the microwave distributor 230 in the same phase, so that the radiation grooves 11 can be disposed in all the waveguides. The slot antennas 2 1 〇A to 2 1 0H are all the same. (Type 3 of the third embodiment) The plasma processing apparatus of the third embodiment of the present invention is used for forming a waveguide slot antenna array. In the plane of the trough, a microwave supply device that distributes the supply power of the microwaves is shown in Fig. 5. Fig. 5 is a cross-sectional view of the test wave supply device. In this figure, Fig. 2 or Fig. 4 103464.doc -27- The constituent elements corresponding to the constituent elements of the disclosure of 1309961 are denoted by the same reference numerals as those of Fig. 2 or Fig. *, and a part of the constituent elements are indicated by functional blocks. The microwave supply device 35 shown in Fig. 5 is the type of the second embodiment. Microwave supply device 250 is substantially the same. However, with regard to the form of the present embodiment, the arrangement and number of the radiation slots n constituting the waveguide slot antennas 310A, 310B, 310C, 310D, 310E, 310F, 310G, and 310H of the antenna array 310 are due to the waveguide. The slot antennas 3 1 〇Α 3 3 10 are arranged at positions in the antenna array 3 1 , and more specifically, opposite to the mounting table 2 formed by combining the waveguide antennas 31 〇 a 31 31 〇 h The radiation portion 11 is not disposed in the central portion 36 of the plane, and the radiation groove 11 is disposed only in the region other than the central portion 36A. Here, the portion 36 in which the radiation groove u is not disposed is opposed to the central portion of the mounting table 2. The density distribution in the processing container 1 tends to increase the space above the central portion of the mounting table 2 when the plasma is in a steady state. If the radiation groove 11' is not disposed in the portion 36 facing the central portion of the mounting table 2, the microwave is not radiated in the upper portion of the central portion of the mounting table 2 having a high plasma density. The destruction of space is inhibited. Thereby, the distribution of the plasma density can be equalized. As described above, in the case where the number of the radiation slots U of each of the waveguide antennas is different, 'when the power is equally distributed to the radiation waveguides of all the waveguide antennas', the number of radiation slots 1 1 is small. The waveguide, which is irradiated by the unused radiation channel 11, will eventually increase the power absorbed by the microwave absorbing material 22. Therefore, the distribution amount of the microwave distributor 230 is adjusted to supply a small amount of electric power as the radiation waveguide having a small number of the radiation grooves 11. As a result, I03464.doc -28 - 1309961 will reduce the loss of power that is not radiated from the radiation cell and efficiently generate plasma. Here, the amount of distribution of the microwave distributor 230 can be adjusted by supplying the microwave wave to the opening 212 of the radiation waveguide and the length of the protrusion of the induction wall of the radiation waveguide via the opening 2 12 . Further, the portion of the portion 36 which is not provided with the groove U has a shape of a quadrangle and a circular shape. (Type 4 of the embodiment) The plasma processing apparatus of the fourth embodiment of the present invention is a user who combines a plurality of microwave supply devices. Fig. 6 is a diagram showing a configuration example of a case where a plurality of microwave supply devices are used in combination. In the figure, (4) reveals a cross-sectional structure in which the plane of the waveguide array is formed with the plane of the radiation groove (8) and the surface of the VIb-Vib of (a). Further, the components corresponding to those disclosed in FIG. 2 or FIG. 4 are denoted by the same reference numerals as those of FIG. 2 or FIG. 4. In combination with a plurality of microwave supply devices 25〇a, 25〇b, 25〇c, 25()d, 25()e, 25〇F and the case of ❹, it is necessary to form the waveguide slot array rib g with radiation The plane of the groove 11 is continuous. Therefore, as shown in Fig. 6 (4), the microwave supply device 2 is disposed in such a manner that the antenna is aligned with the side wall of the antenna array 21 (). The same applies to the microwave supply device 25A and 25A and 25. Further, the microwave supply device 25 is arranged such that the side walls 17 of the antenna array 21 are opposed to each other. The same applies to the microwave supply devices 250B and 250E, 250C and 250F. The radiation grooves 11 are formed in a row in the axial direction of the radiation waveguide. 103464.doc -29- 1309961 The microwave supply devices 250A and 250D are arranged such that each of the radiation grooves is arranged on the same straight line. . The same applies to the microwave supply devices 25A and 250E, 250C and 250F. As a result, since the regularity of the groove arrangement is maintained, the microwaves can be equally supplied into the processing container 1 and equal plasma is generated.

如同本實施之型態’藉由使用複數之微波供應裝置 250A〜250F將電力供應至處理容器1内，能夠使用複數之低 輸出產生器，而實現與使用“固之高輸出產生器時同等之電 力供應。從而，即使為使用大口徑之處理容器丨進行電漿處 理時等必須供應大量電力至處理容器！之情形’藉由使用複 數之低輸出且便宜之微波產生器42，亦能夠降低電漿處理 裝置全體之製造成本。 另一方面，配合天線之大型化而加大電介質板8之面積之 ::有必要：強電介質板8 ’以便電介質板8能夠承受處理 合器1内之南真空（High vac_)。為補強電介質板8，有於 之下側(處理容器1之内部側)架上__)作為 :強：件’從下側支撐電介質板8之方法，據本實施之型 ϋ波未從形成相鄰之複數之天線陣列2 ==放射。因此，~示，藉由使樑二 :邊界相對向之方式延伸’能夠縮小對於微波之標81之影 圖7係揭示组合複數之微波供應裝置而… 他之構造實例之圓々 b开/之其 要素相去之構與圖2或圖4所揭示之構成 田冓成要素以與圖2或圖4相同之符號表示。 103464.doc •30· 1309961 此構造實例中，與第3之實施之型態相同，於波導槽天線 陣列410之形成有放射用槽η之平面之中央部分460未配置 有放射用槽11，而僅於除了中央部分460以外之區域配置有 放射用槽11。此處，未配置有放射用槽11之部分460係與載 置台2之中央部分相對向。 更具體言之，於微波供應裝置450A、450C、450D、450F 之波導槽天線陣列410之全區域配置有放射用槽11，相對地 I ，僅於微波供應裝置45〇B、450E之波導槽天線陣列410之除 了前緣區域以外之區域配置有放射用槽1丨（亦即，於放射用 波導管被短路之另一端側之區域未配置有放射用槽丨丨）。 如上述，藉由配置放射用槽11，與第3之實施之型態相同 ’能夠抑制於電漿密度高之載置台2之中央部分之上部空間 之電漿產生’且將電漿密度之分布均等化。 (第5之實施之型態） 圖8係揭示關於本發明之第5之實施之型態之電漿處理裝 _ 置所使用之微波供應裝置之主要部分構造之立體圖。圖9 係揭示圖8之ΐχ_ιχ’線方向之縱剖面圖。圖1 〇係揭示圖9之 X-X'線方向之橫剖面圖。 • 圖8〜圖1〇所揭示之微波供應裝置55〇，包含圖中未揭示之 微生器、引導由微波產生器所產生之微波之包含方形 波V s之微波波導管、以及將藉由微波波導管所引 導之微波供應至處理容器1内之天線構件570。 …此處，天線構件57〇包含高度低之立方體狀之箱體571。 7 1係由相互分開而被配置成大約平行之平面視方形 103464.doc -31 - 1309961 之2片之平板513、514 (參照圖9)、以及連接平板513、514 之周緣部之包含側壁515、516、517、518 (參照圖1〇)。平 板513、5 14、側壁515〜518係由銅等之導體所形成。 如圖11所示，箱體571之内部，於與側壁516、518平行之 Y方向被分割成3個之區塊（A、b、c)，而且，各區塊（A、B 、C)，於與側壁5丨5、5丨7平行之χ方向被分割成4個之放射 用區塊（Al、Α2、A3、Α4、Bl、Β2、Β3、Β4、Cl、C2、 C3、C4)。因此，箱體571之内部被分割成合計12個之放射 用區塊。 箱體57 1之各放射用區塊之間，係利用由銅等之導體所形 成之分隔構件523、524而被分割。但是，放射用區塊Β1〜Β4 之每一個之邊界係完全地開口，放射用區塊Ai與Bi與Ci (1-1、2、3、4)之每一個之邊界則係一部分開口。其結果， 如圖10所示，分隔構件523包含將2片之平板連接成丁字型者 ，分隔構件524則包含1片之平板。再者，分隔構件523、524 係延伸於構成天線構件570之箱體之平板513與514之間，而 被連接於該兩者。 如圖11所示’箱體571之各放射用區塊係一邊之長度為大 約Xg/2之正方形。此外，如圖9所示，箱體571之高度係大 約λ§/4。此處，λ§係箱體571之管内波長。從而，相互地連 通之放射用區塊Β 1〜Β4係具有作為延伸於X方向之方形波 導管之作用，相同地，放射用區塊A1〜ci ' Α2〜C2、A3〜C3 、A4〜C4則係分別具有作為延伸於γ方向之方形波導管之作 用。 103464.doc •32- 1309961As in the form of the present embodiment, by supplying power to the processing container 1 using a plurality of microwave supplying devices 250A to 250F, a plurality of low output generators can be used, which is equivalent to the use of the "solid high output generator". Electricity supply. Therefore, even when plasma processing is performed using a large-diameter processing container, a large amount of electric power must be supplied to the processing container! In the case of using a plurality of low-output and inexpensive microwave generators 42, the electric power can be reduced. The manufacturing cost of the entire slurry processing apparatus. On the other hand, the area of the dielectric plate 8 is increased in accordance with the enlargement of the antenna: it is necessary to: the strong dielectric plate 8' so that the dielectric plate 8 can withstand the south vacuum in the processing combiner 1 (High vac_). For the reinforcing dielectric plate 8, there is a lower side (the inner side of the processing container 1) on the shelf __) as: strong: a method of supporting the dielectric plate 8 from the lower side, according to the present embodiment The chopping wave is not radiated from the adjacent array of antenna arrays 2 ==. Therefore, ~, by extending the beam two: the boundary is opposite, the image of the microwave can be reduced. A plurality of microwave supply devices are combined with each other... The configuration of the structure of the circle 々b/the constituents of the structure is the same as that of the structure shown in Fig. 2 or Fig. 4, and is represented by the same symbols as those of Fig. 2 or Fig. 4. 103464. Doc • 30· 1309961 In this configuration example, as in the third embodiment, the central portion 460 of the plane of the waveguide groove array 410 on which the radiation groove η is formed is not provided with the radiation groove 11, but only The radiation groove 11 is disposed in a region other than the central portion 460. Here, the portion 460 in which the radiation groove 11 is not disposed is opposed to the central portion of the mounting table 2. More specifically, the microwave supply device 450A, 450C The entire area of the 450D, 450F waveguide array antenna 410 is provided with a radiation slot 11, and oppositely, only the region other than the leading edge region of the waveguide antenna array 410 of the microwave supply device 45B, 450E is disposed. The radiation groove 1 (that is, the radiation groove is not disposed in the region on the other end side where the radiation waveguide is short-circuited). As described above, the radiation groove 11 is disposed and the third type is implemented. Same state It is possible to suppress the plasma generation of the upper portion of the central portion of the mounting table 2 with a high plasma density and to equalize the distribution of the plasma density. (Type 5 of the implementation) FIG. 8 discloses the first aspect of the present invention. Fig. 9 is a longitudinal sectional view showing the direction of the line of the ΐχ_ιχ' of Fig. 8. Fig. 1 shows the longitudinal section of the line of the microwave supply device used in Fig. 8. A cross-sectional view of the X-X' line direction. The microwave supply device 55A disclosed in FIG. 8 to FIG. 1 includes a micro-wave device not shown in the figure, and includes a microwave wave for guiding the microwave generated by the microwave generator. The microwave waveguide of V s and the microwave guided by the microwave waveguide are supplied to the antenna member 570 in the processing container 1. Here, the antenna member 57A includes a cube-shaped case 571 having a low height. 7 1 is a flat plate 513, 514 (see FIG. 9) of two planar planes 103464.doc -31 - 1309961 which are disposed apart from each other, and a side wall 515 including a peripheral portion of the connection plates 513, 514 , 516, 517, 518 (refer to Figure 1〇). The flat plates 513, 514 and the side walls 515 to 518 are formed of conductors such as copper. As shown in Fig. 11, the inside of the casing 571 is divided into three blocks (A, b, c) in the Y direction parallel to the side walls 516, 518, and each block (A, B, C) Divided into four radiation blocks (Al, Α2, A3, Α4, B1, Β2, Β3, Β4, Cl, C2, C3, C4) in the direction parallel to the side walls 5丨5, 5丨7 . Therefore, the inside of the casing 571 is divided into a total of twelve radiation blocks. The respective radiation blocks of the casing 57 1 are divided by partition members 523 and 524 formed of conductors such as copper. However, the boundary between each of the radiation blocks Β1 to Β4 is completely opened, and the boundary between each of the radiation blocks Ai and Bi and Ci (1-1, 2, 3, 4) is partially opened. As a result, as shown in FIG. 10, the partition member 523 includes a panel in which two sheets are connected in a T-shape, and the partition member 524 includes a flat plate. Further, the partition members 523 and 524 are extended between the flat plates 513 and 514 of the casing constituting the antenna member 570, and are connected to the both. As shown in Fig. 11, each of the radiation blocks of the casing 571 is a square having a length of about Xg/2. Further, as shown in Fig. 9, the height of the casing 571 is approximately λ § / 4. Here, λ § is the intra-tube wavelength of the case 571. Therefore, the radiation blocks Β 1 to Β 4 which are connected to each other have a function as a square waveguide extending in the X direction, and similarly, the radiation blocks A1 to ci ' Α 2 to C2, A3 to C3 , and A4 to C4 Each has the function of a square waveguide extending in the γ direction. 103464.doc •32- 1309961

於變成箱體571之頂面之平板513，形成有長方形之開口 542 ’於該開口 542之周圍連接有與微波產生器連結之微波 波導管541。更具體言之，於放射用區塊以與放射用區塊 B3之邊界線上形成有_ 口 542，以便對準包含方形波導管之 微波波導管541之2個之Η面（較廣之壁面）之中間位置。此處 ，連接有微波波導管541之平板513，變成包含放射用區塊 Β1〜Β4之方形波導管之^1面。因此，微波波導管μ丨之管内 以及箱體57i之放射用區塊Β2、Β3之磁力線分別變成如同 圖12(a)以及（b)以箭號所揭示，能夠藉由放射用區塊與放 射用區塊B3,以位相變成相反之方式，分配供應被微波波 導管541所引導之微波。 被供應至放射用區塊B2、B3之微波係分別傳播至放射用 區塊B1、B4。此外，放射用區塊m〜B4之微波係介由開口 512而被分配至放射用區塊八1〜八4與放射用區塊匸卜以。各 放射用區塊之-邊之長度為大約㈣，因&，各放射用區 塊之磁力線變成如同圖1 0所揭示。 如圖H)所示，於變成箱體571之底面之平板514，形成有 放射用槽511。此實例中，於箱體571之各放射用區塊，形 成有包含2個之槽511A、511B之八字型槽。長度短之槽5UA 係被配置於磁力線朝向左方向之位置，而長度長之槽5UB 則係被配置於磁力線朝向下方向之位置，2個之槽5UA、 5 11B係於其延長線上正交。你 — ;Α ^ θ 乂 從而，精由將放射電場之位相 於槽511Α訂為+45。，於槽5 1 1 tr·*τ达. 〜11βδ丁為-45。，從槽 511Α、511Β 所放射之微波乃變成圓形極化波。 103464.doc •33· 1309961 再者，各槽511A、511B之放射電力係訂為放射線性極化 波之情形之大約1/2。如此一來，雖然圓形極化波之電力變 成與放射線性極化波之情形相同，但是，由於各槽5丨丨A、 5UB之放射電力變小，因此，於各槽511Α、5ιΐβ發生放電 之危險減少。 關於此種構造之天線構件57〇，箱體571之包含放射用區 塊B1〜B4之方形波導管以及開口 512，與第i之實施之型態 之微波分配器30相同，具有分配供應微波至放射用區塊 A1〜A4、C1〜C4之作用。此外，放射用區塊A1〜A4以及放射 用區塊CbCM，與第丨之實施之型態之波導槽天線陣列⑺相 同，具有將從微波分配器30所導入之微波介由放射用槽5ιι 供應至處理容器1之内部之作用。從而’天線構件57〇能夠 理解為於第1之實施之型態之微波分配器30之兩側分別設 置波導槽天線陣列10，並進一步於微波分配器3〇之饋電用 波導管之底側(亦gp，與載置台2相對向之壁面)形成放射用 槽5 11者。 -因此，根據本實施之型態，能夠得到與第丨之實施之型態 同樣之作用效果。亦即，能夠抑制增加波導槽天線之數量 亚加大開口面積時之裝置構造之複雜化以及大型化，而且 ’擴大裝置構造之設計自由度。此外，無須加大波導槽天 線之放射用波導管之剖面尺寸，藉由增加放射用區塊之數 里’大面積化即為可能’且不必使其激發高層次模式，微 波之控制變為空且 $ x ^ 与奋易。再者’由於無須激發電介質板8之表面 波口此，能夠實現基板損壞與處理容器丨内之金屬污染少 103464.doc -34- 1309961 之低電子溫度電製。 、’、之外根據本實施之型態，由於變成無須僅具有微 波刀配器30之作用之構件’較第【之實施之型態更進一步之 裝置構造之簡單化以及小型化變為可能。 其次，就天線構件570之變化實例加以說明。 首先’就分隔構件加以說明。 广3係揭示天線構件57〇中能夠使用之分隔構件之平面 形狀之圖式。此圖中，虎始後本_ # & 口甲虛線係表不箱體571之各放射用區塊 之邊界線。 作為分隔構件，如圖13⑷、（b)所示之包含i片之平板之 分隔構件525A、525B之外，得使用如圖13⑷所示之平面視 τ字型之分隔構件525C、如圖13⑷所示之平面視十字型之 分隔構件525D、如圖13⑷所示之平面齡字型之分隔構件 525E ° _之分隔構件523、似係分別與圖13⑷、⑷所示 之分隔構件525C、525A同型。 ❿ 此外，關於，，由於放射用區塊A1〜A4、C1〜C4之每一 個之邊界開口亦可，因此，亦得使用如圖13⑺所示之桂狀 之分隔構件525F。。 其次’就放射用槽511之其他之實例加以說明。 圖14係揭示放射用槽511之其他之配置實例之圖式。此圖 所揭示之放射用槽511亦係包含2個之槽5uc、5ud之八字 里心。但疋’槽511C、511D對於包含放射用區塊Ai與出與A flat waveguide 513 which becomes a top surface of the casing 571 is formed with a rectangular opening 542'. A microwave waveguide 541 connected to the microwave generator is connected around the opening 542. More specifically, a channel 542 is formed on the boundary line between the radiation block and the radiation block B3 so as to align the two sides of the microwave waveguide 541 including the square waveguide (the wider wall surface). The middle position. Here, the flat plate 513 to which the microwave waveguide 541 is connected becomes the surface of the square waveguide including the radiation blocks Β1 to Β4. Therefore, the magnetic lines of the radiation waveguides Β2 and Β3 in the tube of the microwave waveguide and the housing 57i become as shown by arrows in Fig. 12(a) and (b), respectively, and can be radiated by the block and radiation. With the block B3, the microwaves guided by the microwave waveguide 541 are distributed in such a manner that the phase changes to the opposite direction. The microwave systems supplied to the radiation blocks B2 and B3 are respectively propagated to the radiation blocks B1 and B4. Further, the microwaves of the radiation blocks m to B4 are distributed through the opening 512 to the radiation blocks VIII 1 to 8 and the radiation blocks. The length of the side of each of the radiation blocks is about (four), and the magnetic lines of force for each of the radiation blocks become as shown in Fig. 10. As shown in Fig. H), a radiation groove 511 is formed in the flat plate 514 which becomes the bottom surface of the casing 571. In this example, in each of the radiation blocks of the casing 571, a splayed groove including two grooves 511A, 511B is formed. The groove 5UA having a short length is disposed at a position in which the magnetic lines of force are oriented in the left direction, and the groove 5UB having a long length is disposed at a position where the magnetic lines of force are directed downward, and the two grooves 5UA and 511B are orthogonal to each other on the extension line. You — ; Α ^ θ 乂 Thus, the precision is set to +45 by the position of the radiated electric field in the slot 511. In the trough 5 1 1 tr·*τa. ~11βδ丁 is -45. The microwave radiated from the grooves 511Α, 511Β becomes a circularly polarized wave. 103464.doc •33· 1309961 Furthermore, the radiation power of each of the grooves 511A and 511B is set to be about 1/2 of the case of the radiation polarization. In this way, although the power of the circularly polarized wave becomes the same as that of the radiation-polarized wave, since the radiation power of each of the grooves 5A, 5UB becomes small, discharge occurs in each of the grooves 511, 5, and ΐβ. The danger is reduced. With respect to the antenna member 57 of such a configuration, the square waveguide including the radiation blocks B1 to B4 and the opening 512 of the casing 571 are the same as the microwave distributor 30 of the type of the first embodiment, and have a distribution supply microwave to The functions of the radiation blocks A1 to A4 and C1 to C4. Further, the radiation blocks A1 to A4 and the radiation block CbCM are the same as the waveguide channel antenna array (7) of the type in which the second embodiment is implemented, and the microwaves introduced from the microwave distributor 30 are supplied through the radiation grooves 5? To the inside of the processing container 1. Therefore, the antenna member 57 can be understood to be provided with the waveguide antenna array 10 on both sides of the microwave distributor 30 of the first embodiment, and further on the bottom side of the waveguide for the microwave distributor 3 (also gp, the wall surface facing the mounting table 2) is formed with the radiation groove 511. - Therefore, according to the form of the present embodiment, the same effects as those of the third embodiment can be obtained. That is, it is possible to suppress an increase in the number of waveguide antennas, a complication of the structure of the device when the aperture area is increased, and an increase in size, and the design freedom of the device structure is expanded. In addition, it is not necessary to increase the cross-sectional size of the waveguide for the waveguide slot antenna, and it is possible to increase the 'large area' in the number of radioactive blocks without having to excite the high-level mode, and the microwave control becomes empty. And $x^ with Fenyi. Furthermore, since it is not necessary to excite the surface wave port of the dielectric plate 8, it is possible to achieve substrate damage and metal contamination in the processing container 103 103464.doc -34- 1309961 low electronic temperature. In addition to the configuration of the present embodiment, it becomes possible to simplify the structure of the device and to miniaturize the structure of the device which is not required to have only the function of the micro-tool assembly 30. Next, a modified example of the antenna member 570 will be described. First, the partition member will be described. The wide 3 system discloses a plan view of the planar shape of the partition member which can be used in the antenna member 57. In this figure, after the beginning of the tiger, the _ # & mouth nail line is the boundary line of each radiation block of the box 571. As the partition member, as shown in Figs. 13 (4) and (b), the partition member 525A, 525B including the flat plate of the i piece is used, and the partition member 525C of the plan view type τ shown in Fig. 13 (4) is used, as shown in Fig. 13 (4). The partitioning member 525D of the cross-sectional type shown in Fig. 13 and the partition member 523 of the partition member 525E_ shown in Fig. 13 (4) are similar to the partition members 525C and 525A shown in Figs. 13 (4) and (4), respectively. Further, since the boundary opening of each of the radiation blocks A1 to A4 and C1 to C4 is also possible, the dicing-shaped partition member 525F as shown in Fig. 13 (7) is also used. . Next, other examples of the radiation tank 511 will be described. Fig. 14 is a view showing another configuration example of the radiation groove 511. The radiation groove 511 disclosed in this figure also includes two grooves of 5 uc and 5 ud. However, the 疋' slots 511C, 511D are for the inclusion of the radiation block Ai and the output

Ci(i=1、2、3、4)之方形波導管之軸線係形成大約45。之角、 度。 103464.doc -35- 1309961 圖15係揭示圖14所示之放射用槽511之設計實例之圖式 。此外’圖16係揭示放射用槽511之放射用槽511之微波放 射特性之圖式。橫軸表示槽長度除以微波之自由空間波長 (Free space wavelength)(頻率為 2.45 GHz之微波，122 mm) λ〇之數值，縱軸表示來自槽之放射電場之相對增益[dB]或位 相[deg]。 圖15所揭示之實例中係將2個之槽511C、511D所形成之 角度訂為90° ’個別之長度訂為〇·43λ<)、〇.51λ()。若將槽5UC 、5110之個別之長度訂為0 43人〇、〇.51?1〇’則如同從圖16所 瞭解’放射電場之位相變成+45。、-45。。因此，能夠使從槽 511C、511D所放射之微波變成圓形極化波。 圖1 7係揭示放射用槽之另一種配置實例之圖式。此圖所 揭示之放射用槽511E係被配置於關於各放射區塊，磁力線 朝向下方向之位置，所放射之微波變成線性極化波。 再者，亦得藉由天線構件570之放射用槽511之位置改變 極化波。例如，藉由使被放射至處理容器1之側壁附近之微 波變成與該側壁平行之線性極化波，能夠降低微波之洩漏 此外，亦知依照於處理容器1之内部所產生之電漿之狀態 ，以設定極化波。例如’欲提高電子溫度之情形，逕將其 變成線性極化波即可。 其次，就放射用區塊之配置之變化實例（Variati〇n)加以說 明。 本實施之型態中，係採用將箱體571之内部分割成複數之 放射用區塊，並視需要利用分隔構件分隔各放射用區塊之 103464.doc -36 - 1309961 間之構造。從而，能夠依照箱體571之大小與形狀等，任意 - 地變更放射用區塊之數量與配置。 . 例如，關於圖18所示之X方向之長度為λ§，γ方向之長度 * 為3χ4/2之箱體571C，能夠將箱體571C之内部分割成2χ3 - =6個之放射用區塊。 此外，關於圖19所示之X方向以及γ方向之兩者之長度均 為3 X λ§/2之箱體571D，視天線構件57〇之使用態樣而定， 將亦得將箱體571D之内部分割成2 X 3 = 6個之放射用區塊 •。此際，若將1個之放射用區塊之X方向、Y方向之長度分 別訂為ax、ay，最好設定成滿足 λΕ = λ〇/{1-(λ〇/2αχ)2}1/2 Xg/2 = ay 之關係式。The axis of the square waveguide of Ci (i = 1, 2, 3, 4) is formed to be approximately 45. The angle, the degree. 103464.doc -35- 1309961 Fig. 15 is a view showing a design example of the radiation groove 511 shown in Fig. 14. Further, Fig. 16 is a view showing the microwave radiation characteristics of the radiation grooves 511 of the radiation grooves 511. The horizontal axis represents the slot length divided by the free space wavelength of the microwave (microwave at a frequency of 2.45 GHz, 122 mm). The vertical axis represents the relative gain [dB] or phase of the radiated electric field from the slot [ Deg]. In the example disclosed in Fig. 15, the angle formed by the two grooves 511C, 511D is set to 90°', and the individual lengths are defined as 〇·43λ<), 〇.51λ(). If the individual lengths of the grooves 5UC and 5110 are set to 0 43 〇, 〇.51 〇 1 〇 ', as shown in Fig. 16, the phase of the 'radiation electric field becomes +45. -45. . Therefore, the microwaves radiated from the grooves 511C and 511D can be changed into circularly polarized waves. Fig. 1 is a diagram showing another configuration example of the radiation groove. The radiation groove 511E disclosed in this figure is disposed at a position where the magnetic lines of force are directed downward in the respective radiation blocks, and the radiated microwaves become linearly polarized waves. Further, the polarization wave is also changed by the position of the radiation groove 511 of the antenna member 570. For example, by causing the microwave radiated to the vicinity of the side wall of the processing container 1 to become a linearly polarized wave parallel to the side wall, it is possible to reduce the leakage of the microwave. Further, it is also known that the state of the plasma generated in accordance with the inside of the processing container 1 is also known. To set the polarized wave. For example, if you want to increase the temperature of the electron, you can turn it into a linearly polarized wave. Next, an example of the variation of the configuration of the radioactive block (Variati〇n) will be explained. In the present embodiment, the inside of the casing 571 is divided into a plurality of radioactive blocks, and the partitioning member is used to separate the structures between the respective radiation blocks 103464.doc - 36 - 1309961 as needed. Therefore, the number and arrangement of the radiation blocks can be arbitrarily changed in accordance with the size and shape of the casing 571. For example, regarding the case 571C in which the length in the X direction shown in Fig. 18 is λ§ and the length * in the γ direction is 3χ4/2, the inside of the case 571C can be divided into 2χ3 -=6 radiation blocks. . Further, the case 571D having a length of both of the X direction and the γ direction shown in Fig. 19 of 3 X λ § /2 depends on the use form of the antenna member 57 ,, and the case 571D is also obtained. The internal division is divided into 2 X 3 = 6 radiation blocks. In this case, if the lengths of the X-direction and the Y-direction of the radiation block are set to ax and ay, respectively, it is preferable to set λΕ = λ〇/{1-(λ〇/2αχ) 2}1/ 2 Xg/2 = ay relationship.

此外，亦得將第1之實施之型態之具有作為波導槽天線陣 列ίο之作用之部分（圖丨丨中，放射用區塊A1〜A4、ci〜c句之 φ Y方向之長度延長’於Y方向配置複數之放射用區塊。圖20 係揭7F將具有作為波導槽天線陣列1〇之作用之部分AA、CC 之Υ方向之長度訂為“，並於γ方向分別配置2個之放射用 區塊之實例。 此外，如圖21所示，亦得將具有作為波導槽天線陣列1〇 之作用之部分ΑΑ僅設置於具有作為微波分配器30之作用 之部分Β之一側。 如^述，由於放射用區塊之數量與配置其自由度大，因 此，藉由配合處理容器丨之開口部之口徑以及形狀選擇箱體 103464.doc -37- 1309961 。、將’、内部區塊化，能夠於處理容器1之開口部之全區 =配置放射用區塊。因此’若根據本實施之型態，比較組 —复數之放射用波導管以構成天線更為容易，利用天線覆 盍處理容器1之開口部將變為可能。 (第6之實施之型態） 、—關於本發明之第6之實施之型態之電漿處理裝置，係組合 、—數之第5之實施之型態之微波供應裝置乃〇而使用者。 圖22係揭示組合複數之微波供應裝置55〇而使用之情形 之一構造實例之平面圖。圖23係揭示微波供應裝置55〇之天 線構件570之尺寸之圖式。圖24係圖^χχιν_χχιν，線方 向之剖面圖。此目中，與圖冰揭示之構成要素相當之構成 要素以與圖1相同之符號表示。 如圖22所示，LCD基板3之尺寸為11GQmmxl3()()mm之情 形，例如，使用口徑為1500 mmxl5〇〇 mm之處理容器丨。此 外，於處理容器i之開口上部將3χ3=9個具有346 4 346.4 mm之箱體57;[之天線構件57〇配置成矩陣狀。再者， 如圖23所示，此箱體571之内部係被分割成_ 86 6 _ 86.6 mm之放射用區塊。 如上述，藉由使用複數之微波供應裝置55〇，能夠得到與 上述第4之實施之型態同樣之作用效果。亦即，能夠使用低 輸出且價格便宜者作為各微波供應裝置55〇之微波產生器 ，其結果，能夠降低電漿處理裝置全體之製造成本。 本實施之型態雖然與第4之實施之型態同#，亦得利用^ 片之電介質板8阻塞處理容器丨之上部開口’並於該電介質 I03464.doc •38- 1309961 板8上配置複數之天線構件57〇,但是，亦得如圖24所示， 利用電介質板8A僅構成各天線構件57〇之下部。此種情形， 由於無須加大電介質板之面積，因此，能夠維持電介質板 之強度。僅配置於天線構件570之下部之電介質板8A係藉由 搭架於處理容器1之上部開口之樑1A而受到支撐。電介質板 8A與樑1A之間、以及㈣之基部與處理容器i之側壁頂面 之間’使其存在Ο型環等之密封（Seal)構件1B，以確保處理 容器1内之氣密性。In addition, it is also necessary to have the type of the first implementation as a part of the role of the waveguide antenna array ί (in the figure, the length of the radiant blocks A1 to A4 and the ci~c sentence in the φ Y direction is extended' A plurality of radioactive blocks are arranged in the Y direction. Fig. 20 shows that the length of the portion AA and CC having the function as the waveguide antenna array 1 is set to ", and two of them are arranged in the γ direction. Further, as shown in Fig. 21, a portion having a function as a waveguide antenna array 1b is also provided only on one side of a portion which functions as the microwave distributor 30. As described above, since the number and arrangement of the radiation blocks are large, the box 103464.doc -37-1309961 is selected by the diameter and shape of the opening of the processing container, and the inner block is It is possible to process the entire area of the opening of the container 1 to arrange the radiation block. Therefore, it is easier to compare the group-plurality of the radiation waveguide to form the antenna according to the type of the present embodiment, and the antenna is covered by the antenna. Processing the opening of the container 1 (The sixth embodiment is implemented), and the plasma processing apparatus of the type of the sixth embodiment of the present invention is a microwave supply apparatus of the type of the fifth embodiment. Figure 22 is a plan view showing a configuration example in which a plurality of microwave supply devices 55 are combined and used. Fig. 23 is a view showing the size of the antenna member 570 of the microwave supply device 55. Fig. χχιν_χχιν, a cross-sectional view in the direction of the line. In this case, the constituent elements corresponding to those shown in Fig. 1 are denoted by the same reference numerals as in Fig. 1. As shown in Fig. 22, the size of the LCD substrate 3 is 11GQmmxl3() ( In the case of mm, for example, a processing container having a diameter of 1500 mm x 15 mm is used. Further, in the upper portion of the opening of the processing container i, 3 χ 3 = 9 boxes 57 having 346 4 346.4 mm; [the antenna member 57 〇 Further, as shown in Fig. 23, the inside of the casing 571 is divided into radiation blocks of _86 6 _ 86.6 mm. As described above, by using a plurality of microwave supply devices 55, Can obtain the type of implementation of the above fourth In other words, it is possible to use a microwave generator having a low output and a low price as the microwave supply device 55, and as a result, it is possible to reduce the manufacturing cost of the entire plasma processing apparatus. 4, the implementation of the same type as #, also has to use the dielectric plate 8 of the film to block the upper opening ' of the processing container 并 and to configure a plurality of antenna members 57 该 on the dielectric I03464.doc • 38-1309961 board 8, however, As shown in Fig. 24, only the lower portion of each of the antenna members 57 is formed by the dielectric plate 8A. In this case, since the area of the dielectric plate does not need to be increased, the strength of the dielectric plate can be maintained. Only the dielectric plate 8A disposed at the lower portion of the antenna member 570 is supported by the beam 1A which is opened at the upper portion of the processing container 1. A sealing member 1B of a serpentine ring or the like is provided between the dielectric plate 8A and the beam 1A, and between the base of the (4) and the top surface of the side wall of the processing container i to secure the airtightness in the processing container 1.

此外，亦得於樑1A上設置將氣體導入處理容器之導氣 管7A。再者，亦得設計成於載置台2之上部空間配置金屬性 之淋灑板（Shower Plate)(圖中未揭示），將從導氣管7a所導 入之氣體均等化。 此外，亦得使天線構件570之形成有放射用槽511之底面 與電介質構件8A接觸。此情形，藉由進行天線構件57〇之溫 度控制，能夠調整電介質板8八之〉益度。#由冷#天線構件 570而冷卻電介質板8八，能夠抑制因電漿熱流所造成之電介 質板8A之溫度上昇，防止因熱膨脹所造成之電介質板之 破損。此外，例如使用氟碳氣體（Flu〇r〇carb〇n 等之沉 積（DeP〇)性氣體進行處理（Pr〇cess)之際，藉由加熱天線構$ 570’而使電介質板8A之溫度變成15〇〇c之程度，能夠防止 往電介質板8A之沉積，使處理安定化。 (第7之實施之型態） 於第5之實施之型態中，雖已揭示使用方形波導管作為微 波供應裝置5 5 0之微波波導管5 41之實例，但是，並非二此 I03464.doc *39- 1309961 為限’例如，使用同軸波邋黑 ^ S亦可’茲說明使用此同軸波 V官之實例作為本發明之第 中/尤貫％之型態。 圖2 5係揭示關於本發明 弟之霄施之型態之電漿處理 装置所使用之微波供應裝置 土脊0卩分構造之縱剖面圖。 圖26係圖25之XXIV-X卿線方向之橫剖面圖。此等圖中， 與圖8〜圖1G所揭示之構成要素相當之構成要素以與圖8〜圖 10相同之符號表示。 圖25以及圖26所示之微波供應裝置65〇包含圖中未揭示 之微波產生器、引導於微波產生器所產生之微波之包含同 軸波導管之微波波導管⑷、以及將藉由微波波導管⑷所 引導之微波供應至處理容器i内之天線構件67〇。 於變成天線構件670之箱體671之頂面之平板513上，係形 成有圓形之開口 642。開口 642係被形成於箱體671内部之某 些放射用區塊之中央部分，於開口 642之周圍連接有微波波 導官641之外部導體641A。被配置成與外部導體641A為同 轴之内部導體641B係通過開口 642而延伸至箱體671内部為 止。内部導體641B之前緣，既得如圖25(a)所示被連接於變 成箱體6.7 1之底面之平板5 14 ’亦得如圖25 (b)所示未被連接 。前者之情形，藉由於内部導體64 1B之前緣安裝推拔643 (Taper) ’能夠缓和從微波波導管641往天線構件670之阻抗 之變化’並縮小於微波波導管6 4 1與天線構件6 7 〇之連接部 之微波之反射。 微波波導管64 1之管内之磁力線’如圖2 7(a)之箭號所示， k以内部導體6 4 1 B為中心而方疋轉，因此，：由如同上述將 103464.doc -40· 1309961 微波波導管641連接至放射用區塊之中央部，於該放射用區 塊之磁力線變成如圖27(b)之箭號所示，能夠如圖26所示分 配微波予全部區塊。 與第6之實施之型態相同，亦得組合複數之使用同軸導波 官作為此微波波導管641之微波供應裝置650而使用。其一 構造實例揭示於圖2 8。此圖中，於處理容器i之開口上部， 將3x3=9個之微波供應裝置65〇之天線構件67〇配置成矩陣 狀。 ® 以上，雖已就本發明之各種之實施之型態加以說明，但 是’將上述之實施之型態所包含之技術思想相互組合者亦 為本發明所包含。 (產業上之利用可能性） 本發明之電漿處理裝置能夠利用於敍刻裝置、CVD裝置 、灰化裝置等。此外’本發明之電漿處理方法能夠利用於 I虫刻、灰化、CVD等之處理。再者，此等之電漿處理裝置 以及方法，亦能夠利用於LCD等之平面顯示裝置之製造。 【圖式簡單說明】 圖1係揭示關於本發明之第1之實施之型態之電漿處理裝 置之全體構造之縱剖面圖。 圖2係圖1所揭示之電漿處理裝置所使用之微波供應裝置 之構造之橫刟面圖。 圖3係揭示放射用槽之構造實例之橫剖面圖。 圖4係揭示關於本發明之第2之實施之型態之電漿處理裝 置所使用之微波供應裝置之構造之橫剖面圖。 103464.doc -41 - 1309961 圖5係揭示關於本發明之第3之實施之型態之電渡處理裝 置所使用之微波供應裝置之構造之橫剖面圖。 、 圖6(a)、（b)係揭示關於本發明之第4之實施之型態之電聚 處理裝置中，組合複數之微波供應裝置而使用之情形之一 構造實例之圖式。 圖7係揭示組合複數之微波供應裝置而使用之情形之其 他之構造實例之圖式。 、Further, an air guiding tube 7A for introducing a gas into the processing container is also provided on the beam 1A. Further, it is also necessary to design a metallic shower plate (not shown) in the upper space of the mounting table 2 to equalize the gas introduced from the air guiding tube 7a. Further, the bottom surface of the antenna member 570 on which the radiation groove 511 is formed is brought into contact with the dielectric member 8A. In this case, by performing the temperature control of the antenna member 57, it is possible to adjust the efficiency of the dielectric plate 8. By cooling the antenna member 570 and cooling the dielectric plate 8-8, it is possible to suppress the temperature rise of the dielectric plate 8A caused by the plasma heat flow and prevent damage of the dielectric plate due to thermal expansion. Further, for example, when a fluorocarbon gas (Fr〇r〇carb〇n or the like deposition (DeP〇) gas is used for the treatment, the temperature of the dielectric plate 8A is changed by heating the antenna structure $570'. The degree of 15 〇〇c can prevent the deposition to the dielectric plate 8A and stabilize the process. (Type 7 implementation) In the form of the fifth implementation, it has been disclosed that a square waveguide is used as the microwave supply. An example of a microwave waveguide 5 41 of the device 550, however, is not limited to I03464.doc *39-1309961. For example, the use of a coaxial wave 邋 black ^ S can also be described as an example of the use of this coaxial wave V official FIG. 2 is a longitudinal sectional view showing a structure of a soil ridge 0 卩 of a microwave supply device used in a plasma processing apparatus of the type of the present invention. Fig. 26 is a cross-sectional view taken along the line XXIV-X of Fig. 25. In the figures, the components corresponding to those shown in Figs. 8 to 1G are denoted by the same reference numerals as those of Figs. The microwave supply device 65A shown in FIG. 25 and FIG. 26 includes not disclosed in the figure. The microwave generator, the microwave waveguide (4) including the coaxial waveguide guided by the microwave generated by the microwave generator, and the microwave guided by the microwave waveguide (4) are supplied to the antenna member 67A in the processing container i. A circular opening 642 is formed in the flat plate 513 of the top surface of the casing 671 of the antenna member 670. The opening 642 is formed in a central portion of some of the radiation blocks inside the casing 671, around the opening 642. The outer conductor 641A of the microwave waveguide official 641 is connected. The inner conductor 641B disposed coaxially with the outer conductor 641A extends through the opening 642 to the inside of the case 671. The front edge of the inner conductor 641B is as shown in Fig. 25 (a) The flat plate 5 14 ' shown as being connected to the bottom surface of the casing 6.7 1 is also not connected as shown in Fig. 25 (b). In the former case, the pusher 643 (Taper) is mounted by the front edge of the inner conductor 64 1B. "It is possible to alleviate the change in impedance from the microwave waveguide 641 to the antenna member 670" and to reduce the reflection of the microwaves at the connection portion between the microwave waveguide 641 and the antenna member VII. The inside of the microwave waveguide 64 1 The force line 'is shown by the arrow of Fig. 27 (a), k is centered on the inner conductor 6 4 1 B, and therefore: is connected by the microwave waveguide 641 of 103464.doc -40· 1309961 as described above. In the central portion of the radiation block, the magnetic field lines in the radiation block are as shown by the arrows in Fig. 27(b), and the microwaves can be distributed to all the blocks as shown in Fig. 26. In the same state, a plurality of coaxial waveguides are used as the microwave supply device 650 of the microwave waveguide 641. An example of its construction is disclosed in Figure 28. In the figure, in the upper portion of the opening of the processing container i, the antenna members 67 of the microwave supply device 65 of 3x3 = 9 are arranged in a matrix. In the above, the various embodiments of the present invention have been described, but the combination of the technical ideas contained in the above-described embodiments is also included in the present invention. (Industrial Applicability) The plasma processing apparatus of the present invention can be used in a sizing apparatus, a CVD apparatus, an ashing apparatus, and the like. Further, the plasma processing method of the present invention can be utilized for the treatment of insect engraving, ashing, CVD, and the like. Furthermore, these plasma processing apparatuses and methods can also be utilized in the manufacture of flat display devices such as LCDs. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a longitudinal cross-sectional view showing the entire structure of a plasma processing apparatus of a first embodiment of the present invention. Fig. 2 is a cross-sectional view showing the structure of a microwave supply device used in the plasma processing apparatus disclosed in Fig. 1. Fig. 3 is a cross-sectional view showing an example of the configuration of a radiation groove. Fig. 4 is a cross-sectional view showing the structure of a microwave supply device used in a plasma processing apparatus of a second embodiment of the present invention. 103464.doc -41 - 1309961 Fig. 5 is a cross-sectional view showing the structure of a microwave supply device used in the electric power processing apparatus of the third embodiment of the present invention. Figs. 6(a) and 6(b) are views showing a configuration example of a configuration in which a plurality of microwave supply devices are used in combination with the electropolymerization device of the fourth embodiment of the present invention. Fig. 7 is a view showing another configuration example of a case where a plurality of microwave supply devices are used in combination. ,

圖8係揭示關於本發明之第5之實施之型態之電裝處理裝 置所使用之微波供應裝置之主要部分構造之立體圖。 圖9係圖8之ΙΧ-ΐχ，方向之縱剖面圖。 圖1〇係圖9之X-X，方向之橫剖面圖。 圖11係揭不箱體内部之放射用區塊之配置實例之圖式。 、圖12⑷、⑻係揭示微波波導管之管内以及微波波導管所 連接之放射用區塊之磁力線之圖式。 圖13(a)〜⑴係揭不天線構件中能夠使用之分隔構件之平 面形狀之圖式。 圖14係揭示放射用槽之其他之配置實例之圖式。 式 圖15⑷、⑻係揭示圖14所示之放射用槽之設計實例之圖 圖16係揭示放射用槽之微波放射特性之圖式。 圖17係揭示放射用槽之另一種之配置實例之圖式。 圖18係揭示箱體内部之放射用區塊之其他之配置實例之 塊之其他之配置實例之 圖19係揭示箱體内部之放射用區 103464.doc -42- 1309961 圖式。 圖2 〇係揭示箱體内部之放射用區塊之其他之配置實例之 圖式。 圖21係揭示箱體内部之放射用區塊之其他之配置實例之 圖式。 圖22係揭示組合複數之微波供應裝置而使用之情形之一 構造實例之平面圖。 圖23係揭示微波供應裝置之天線部件之尺寸之圖式。 圖24係圖22之χχιν_χχιν，線方向之橫刮面圖。 圖25(a)、（b)係揭示關於本發明之第7之實施之型態之電 聚處理裝置所使用之微波供應裝置之主要部分構造之縱剖 面圖。 圖26係圖25之Χχνί-χχγΓ線方向之橫剖面圖。 圖27(a)、（b)係揭示微波波導管之管内以及微波波導管所 連接之放射用區塊之磁力線之圖式。 圖28係揭示組合複數之微波供應裝置而使用之情形之— 構造實例之平面圖。 圖29係揭示使用波導槽天線陣列之以往之電漿處理袭置 之全體構造之縱剖面圖。 圖30係包含波導槽天線陣列之一部分之構造之橫剖面圖。 【主要元件符號說明】 1 處理容器 樑Fig. 8 is a perspective view showing the configuration of a main part of a microwave supply device used in the electrical equipment of the fifth embodiment of the present invention. Figure 9 is a longitudinal sectional view of the ΙΧ-ΐχ, direction of Figure 8. Figure 1 is a cross-sectional view taken along the line X-X of Figure 9. Fig. 11 is a view showing an example of the arrangement of the radiation blocks inside the casing. Fig. 12 (4) and (8) show the magnetic lines of force in the tube of the microwave waveguide and the radiation block to which the microwave waveguide is connected. Fig. 13 (a) to (1) are diagrams showing the planar shape of the partition member which can be used in the antenna member. Fig. 14 is a view showing another configuration example of the radiation groove. 15(4) and (8) show a design example of the radiation groove shown in Fig. 14. Fig. 16 is a view showing the microwave emission characteristics of the radiation groove. Fig. 17 is a view showing an arrangement example of another type of radiation groove. Fig. 18 is a view showing another configuration example of a block of another configuration example of the radiation block inside the casing. Fig. 19 is a view showing the radiation zone inside the casing 103464.doc - 42- 1309961. Figure 2 shows a diagram showing other examples of configuration of the radioactive block inside the cabinet. Fig. 21 is a view showing another configuration example of the radiation block inside the casing. Fig. 22 is a plan view showing a configuration example of a case where a plurality of microwave supply devices are used in combination. Figure 23 is a diagram showing the dimensions of the antenna components of the microwave supply device. Figure 24 is a cross-sectional view of the line 方向ιν_χχιν in Fig. 22 in the direction of the line. Fig. 25 (a) and (b) are longitudinal cross-sectional views showing the configuration of a main part of a microwave supply device used in the electropolymerization apparatus of the seventh embodiment of the present invention. Figure 26 is a cross-sectional view taken along the line Χχνί-χχγ of Figure 25. Fig. 27 (a) and (b) are views showing magnetic lines of force in the tube of the microwave waveguide and the radiation block to which the microwave waveguide is connected. Fig. 28 is a plan view showing a configuration example in which a plurality of microwave supply devices are used in combination. Fig. 29 is a longitudinal cross-sectional view showing the entire structure of a conventional plasma processing apparatus using a waveguide antenna array. Figure 30 is a cross-sectional view showing the configuration of a portion of a waveguide slot antenna array. [Main component symbol description] 1 Processing container Beam

1B 密封構件 103464.doc -43 - 13099611B sealing member 103464.doc -43 - 1309961

2 載置台 3 LCD基板 4 匹配器 5 1¾頻電源 6 排氣口 7 導氣口 7 A 導氣管 8 電介質板 8A 電介質板 9 遮敝材料 10 、 110 、 210 、 310 、 410 波導槽天線陣列 10A〜10H、110A〜110H、 波導槽天線 210A〜210H、310A〜310H 11 、 111 、 511 放射用槽 12 、 212 饋電用槽 13 、 14 、 513 、 514 平板 15〜18 、 515〜518 、 517A 、 側壁 517B 19 、 20 、 219 、 220 分隔板 21 慢波材料 21A 斜坡 22 微波吸收材料 30 ' 230 分配器 542 、 512 、 31 開口 103464.doc -44- 1309961 32 ' 232 41 、 541 、 641 42 43 50 、 150 、 250 、 誘導壁 微波波導管 微波產生器 隔膜 微波供應裝置 250A-250F 、 350 、 450A-450F 、 550 、 6502 Mounting table 3 LCD substrate 4 Matching device 5 13⁄4 frequency power supply 6 Exhaust port 7 Air inlet 7 A Air duct 8 Dielectric plate 8A Dielectric plate 9 Concealing material 10, 110, 210, 310, 410 Waveguide antenna array 10A~10H 110A to 110H, waveguide slot antennas 210A to 210H, 310A to 310H11, 111, 511 radiation slots 12, 212, feed slots 13, 14, 513, 514, flat plates 15 to 18, 515 to 518, 517A, and side walls 517B 19, 20, 219, 220 partition plate 21 slow wave material 21A slope 22 microwave absorbing material 30 '230 distributor 542, 512, 31 opening 103464.doc -44- 1309961 32 ' 232 41 , 541 , 641 42 43 50 , 150, 250, induced wall microwave waveguide microwave generator diaphragm microwave supply device 250A-250F, 350, 450A-450F, 550, 650

# 511A-511E 523 、 524 、 525-525F 570 ' 670 571 、 571A-571E 、 671 641 A 641B A1-A4、B1-B4、C1-C4 槽 分隔構件 天線構件 箱體 外部導體 内部導體 放射區塊# 511A-511E 523 , 524 , 525-525F 570 ' 670 571 , 571A-571E , 671 641 A 641B A1-A4 , B1-B4 , C1-C4 Slot Separation member Antenna member Enclosure External conductor Inner conductor Radiation block

103464.doc -45103464.doc -45

Claims (1)

月 β修(更)正本 L309__124991號專利申請案 中文申請專利範圍替換本(97年1〇月 十、申請專利範圍： 1· -種電漿處理裝置，其係包含：載置台’其係載置被處 理物；處理容器，其係收容該載置台；天線陣列其係 配置成與前述載置台相對向、且於放射用波導管形成有 槽之複數之波導槽天線切與前述放㈣波導管之轴線 方向正父之寬度方向成一整列地配置；以及分配器其 係連接於前述放射用波導管之—端而分別將微波予以分 配；其特徵在於： 前述分配器包含： 延伸於前述波導槽天線之前述寬度方向之饋電用波導 管；以及 連通形成於該饋電用波導管之壁面之前述放射用波導 管與前述饋電用波導管之開口。 2.如請求項丨之電漿處理裝置，其中， 於與前述饋電用波導管之前述載置台相對向之壁面形 成有槽。 3_如請求項1或2之電漿處理裝置，其中， 前述分配器進-步包含從與前述開口相對向之前述饋 電用波導管之壁面朝向前述開口突出、將傳播於前述饋 電用波導管之微波往前述放射収導管誘導之誘導壁。 4.如請求項1或2之電漿處理裝置，其中， 土 前述天線陣列係被分別設置於前述饋電用波導管之兩 側。 5.如請求項1之電漿處理裝置，其包含： 103464-971017.doc 1309961 僅配置於前述放射用波導管之管 波材料。 内之包含電介質之 慢 端側之端 内The monthly beta repair (more) original L309__124991 patent application Chinese patent application scope replacement (97 years 1 month 10, the scope of application patent: 1 - a plasma processing device, which includes: the mounting table 'the system is placed a processing object; the processing container is configured to receive the mounting table; and the antenna array is disposed so as to be opposed to the mounting table, and the plurality of waveguide groove antennas formed in the radiation waveguide are cut and the (four) waveguide And the distributor is connected to the end of the radiation waveguide to respectively distribute the microwave; wherein the dispenser comprises: extending from the waveguide slot antenna a waveguide for feeding in the width direction; and an opening for connecting the radiation waveguide formed on a wall surface of the power feeding waveguide to the waveguide for the power feeding. 2. The plasma processing device according to claim a groove formed in a wall surface facing the mounting table of the power feeding waveguide, wherein the plasma processing device of claim 1 or 2, wherein The dispenser further includes an inducing wall that protrudes from the wall surface of the power feeding waveguide toward the opening and that propagates the microwave propagating through the feeding waveguide to the radiation collecting duct. The plasma processing apparatus of claim 1 or 2, wherein the antenna arrays are respectively disposed on both sides of the power feeding waveguide. 5. The plasma processing apparatus of claim 1, comprising: 103464- 971017.doc 1309961 is only disposed in the tube wave material of the aforementioned radiation waveguide. The inside end of the dielectric containing the slow end side 6.如請求項5之電漿處理裝置，其中， 前述慢波材料於前述放射用波導管之前述— 部具有斜坡。 7 ·如請求項1之電漿處理裝置，其中， 前述放射用波導管之宽声伤铪、+，練承m丄 f <見度係别述饋電用波導管之管 波長之大約1/2，且 & 前述開口係以與前述饋電用波導管之管内波長大約相 同之間隔所配Ϊ，而使每個相鄰之2個放射用料管連通 至前述饋電用波導管。 8·如請求項1之電漿處理裝置，其包含： 被配置成互相大致平行之2片導體板；以及 延伸於前述2片導體板之間而分隔藉由前述2片導體板 所形成之空間之包含導體之分隔構件；且 前述放射用波導管與前述饋電用波導管係由前述2片 導體板與前述分隔構件所形成。 9. 如請求項1之電漿處理裝置，其包含： 產生微波之微波產生器； 將從該微波產生器所輸出之前述微波引導至前述饋電 用波導管之微波波導管；以及 設置於該微波波導管、而使電源側與負荷側之阻抗匹 配之阻抗匹配器。 10. 如請求項9之電漿處理裝置，其中， 103464-971017.doc -2 - 1309961 前述阻抗匹配器包含：被設置於前述饋電用波導管與 則述微波波導管之連接部附近、而縮小微波波導管之管 路之隔膜（iris)。 U·如請求項1之電漿處理裝置’其包含複數之微波供應裝置 ’其包括前述天線陣列、前述分配器、以及供應前述微 波至該分配器之微波產生器。 12.如請求項I〗之電漿處理裝置，其中， /個微波供應裝置被配置成各自所包含之放射用波導 管之另-端係相對向’而且，形成於各自所包含之前述 放射用波導管之前述槽係排列於同一直線上。 13_如請求項11之電漿處理裝置，其中， 複数之天線陣列被配置於前述處理容H之外部；另 包含：阻塞前述處理容器之前述天線陣列側端部之電 介質板；以及6. The plasma processing apparatus of claim 5, wherein the slow wave material has a slope in the aforementioned portion of the radiation waveguide. 7. The plasma processing apparatus according to claim 1, wherein the wide acoustic flaw of the radiation waveguide, +, training, and the frequency of the tube of the feeding waveguide are about 1 /2, and < The opening is arranged at approximately the same interval as the wavelength of the tube of the power feeding waveguide, and each adjacent two of the radiation tubes is connected to the feeding waveguide. 8. The plasma processing apparatus of claim 1, comprising: two conductor plates arranged to be substantially parallel to each other; and a space extending between the two conductor plates to separate spaces formed by the two conductor plates The partition member including the conductor; and the radiation waveguide and the power feeding waveguide are formed by the two conductor plates and the partition member. 9. The plasma processing apparatus of claim 1, comprising: a microwave generator that generates microwaves; a microwave waveguide that guides the microwave outputted from the microwave generator to the waveguide for feeding; and A microwave waveguide, an impedance matcher that matches the impedance of the power supply side to the load side. 10. The plasma processing apparatus of claim 9, wherein: 103464-971017.doc - 2 - 1309961, the impedance matching device includes: disposed near the connection portion between the power feeding waveguide and the microwave waveguide; Reduce the diaphragm of the microwave waveguide. U. The plasma processing apparatus of claim 1, which comprises a plurality of microwave supply devices, which comprises the aforementioned antenna array, the aforementioned distributor, and a microwave generator supplying the aforementioned microwaves to the dispenser. 12. The plasma processing apparatus according to claim 1, wherein the microwave supply means is disposed such that the other ends of the radiation waveguides are opposed to each other and are formed in the respective radiations included in the respective The aforementioned grooves of the waveguide are arranged on the same straight line. The plasma processing apparatus of claim 11, wherein the plurality of antenna arrays are disposed outside the processing capacity H; and further comprising: a dielectric plate blocking the side end of the antenna array of the processing container; 而 以與相鄰之複數之天後陳石丨丨夕沒田丄A, 八琛陣列之邊界相對向之方式延伸 支撐前述電介質板之補強構件。 14.如請求項1之電漿處理裝置，其中 形成於前述放射用波導營之俞 及守e之則述槽之數量係因該放射 用波導管被配置於前述天结随丨〜 I入琛陣列内之位置而異。 15. 如請求項14之電漿處理裝置，其中， 組合所有之放射用波導管 之平面之中央部分以外之 前述槽僅被形成於除了藉由 所形成之與前述載置台相對向 區域。 16.如請求項I4之電聚處理裝置，盆中 103464-971017.doc 1309961 月(j述分配器係依放射用波導管的前述槽之數量較少程 度而供應較小量電力。 17.如請求項1之電漿處理裝置，其中， 前述波導槽天線係從前述槽供應圓形極化波至前述處 理容器之内部。 18.如請求項2之電漿處理裝置，其中， 前述波導槽天線以及前述分配器係從前述槽供應圓形 極化波至前述處理容器之内部。The reinforcing member supporting the dielectric plate is extended in a manner opposite to the boundary of the adjacent plurality of days after the end of the complex of Chen Shizhen, No. Tiantian A, and the gossip array. 14. The plasma processing apparatus according to claim 1, wherein the number of the grooves formed in the radiation tunneling chamber of Yu and Shou e is because the radiation waveguide is disposed in the sky knot. The location within the array varies. 15. The plasma processing apparatus of claim 14, wherein the groove other than the central portion of the plane of all of the radiation waveguides is formed only in a region opposed to the mounting table by the formation. 16. The electropolymerization treatment device of claim I4, in the basin 103464-971017.doc 1309961 (the dispenser is supplied with a smaller amount of electricity depending on the number of the aforementioned grooves of the radiation waveguide. The plasma processing apparatus of claim 1, wherein the waveguide channel antenna supplies a circularly polarized wave from the groove to the inside of the processing container. 18. The plasma processing apparatus of claim 2, wherein the waveguide antenna is And the aforementioned dispenser supplies a circularly polarized wave from the aforementioned groove to the inside of the aforementioned processing container. 19. 一種電漿處理方法，其係利用在放射用波導管形成有槽 之複數之波導槽天線於與前述放射用波導管之軸線方向 正交之寬度方向成一整列地配置之天線陣列將微波供應 至處理容器内，且利用藉由被供應至前述處理容器内之 前述微波所產生之電漿而處理被收容於前述處理容器内 之載置台上之被處理物者，其特徵在於： 將微波供應至構成分配器之饋電用波導管，經由形成 於前述饋電用波導管之側壁之複數開口供應前述微波至 前述放射用波導管之每—個，且經由形成於前述放射用 波導管之前述槽將前述微波供應至前述處理容器内。 2〇.如請求項丨9之電漿處理方法，其中， 僅於前述放射用波導管之管内配置包含電介質之慢波 材料，且縮短形成於前述放射用波導管之複數槽之間隔。 21.如請求項19或20之電漿處理方法，其中， 將2片之導體板配置成互相大致平行，利用延伸於前述 2片之導體板之間之包含導體 3等體之分隔構件分隔藉由前述2 103464-971017.doc 1309961 片之導體板所形成之空間，且由前述2片之導體板與前述 分隔構件形成前述放射用波導管與前述饋電用波導管。 22.如請求項19之電漿處理方法，其中， S 使用複數之微波供應裝置，該微波供應裝置包含前述 天線陣列、前述分配器、以及供應前述微波至該分配^ 微波產生器。 ° 如請求項I9之電漿處理方法，其中，A plasma processing method for supplying microwaves by using an antenna array in which a plurality of waveguide slot antennas formed by a radiation waveguide are formed in a row in a width direction orthogonal to an axial direction of the radiation waveguide. The treatment of the object to be processed on the mounting table in the processing container by the plasma generated by the microwave supplied to the processing container in the processing container is characterized in that: microwave supply is provided To the power feeding waveguide constituting the distributor, the microwaves are supplied to each of the radiation waveguides through a plurality of openings formed in the side walls of the power feeding waveguide, and are formed through the radiation waveguide formed in the foregoing The tank supplies the aforementioned microwaves into the aforementioned processing vessel. The plasma processing method according to claim 9, wherein the slow wave material containing the dielectric is disposed only in the tube of the radiation waveguide, and the interval formed in the plurality of grooves of the radiation waveguide is shortened. The plasma processing method according to claim 19 or 20, wherein the two conductor plates are disposed substantially parallel to each other, and are separated by a partition member including a conductor 3 or the like extending between the two conductor plates. A space formed by the conductor plate of the above-mentioned 2 103464-971017.doc 1309961, and the radiation waveguide and the power feeding waveguide are formed by the two conductor plates and the partition member. 22. The plasma processing method of claim 19, wherein S uses a plurality of microwave supply devices comprising the aforementioned antenna array, the aforementioned distributor, and the supply of the microwaves to the distribution microwave generator. ° The plasma processing method of claim I9, wherein 僅於除了藉由組合所有之放射用波導管所形成之與前 述載置台相對向之平面之中央 、 田您干央邛为以外之區域形成前述 糟- 24.如請求項19之電漿處理方法，其中 將前述天線陣列配置於前 介質板阻塞前述處理容器之 使前述天線陣列與該電介質 線陣列之溫度。 述處理容器之外部，利用電 月'J述天線陣列側端部，且於 板接觸之狀態下控制前述天The foregoing method is formed only in the area other than the center of the plane opposite to the aforementioned stage formed by combining all of the radiation waveguides. 24. The plasma processing method of claim 19 And arranging the antenna array on the front dielectric plate to block the temperature of the antenna array and the dielectric line array of the processing container. The outside of the processing container is controlled by the side end of the antenna array, and the above-mentioned day is controlled in the state of contact with the board. 25. —種平面顯示裝置之製造方法，^ 項19至24中任一項之電漿處理方沒 進行蝕刻 '灰化、以及CVD之中至 徵在於使用如請求 於前述被處理物上 一種之處理。 103464-9710l7.doc25. A method of manufacturing a flat display device, wherein the plasma processing party of any one of items 19 to 24 is not subjected to etching 'ashing, and CVD is used for the purpose of using one of the objects to be treated as claimed. deal with. 103464-9710l7.doc