TWI306184B

TWI306184B - Thinner composition for removing photosensitive resin

Info

Publication number: TWI306184B
Application number: TW093119118A
Authority: TW
Inventors: Suk-Il Yoon; Woo-Sik Jun; Hee-Jin Park
Original assignee: Dongjin Semichem Co Ltd
Priority date: 2003-08-01
Filing date: 2004-06-29
Publication date: 2009-02-11
Also published as: JP2005055886A; JP4494897B2; KR101016724B1; CN1580959A; KR20050014955A; TW200506551A; CN100595680C

Description

1306184 玖、發明說明【發明所屬之技術領域】本發明係關於~種在半備過程中用來清除光阻的稀係關於一種在液晶顯示敦置光阻的釋劑組合物。導體裝置或液晶顯示裝置釋劑組合物。詳言之，本製備過程中可有效清除不的製發明欲求1306184 发明发明发明发明发明发明发明发明发明发明发明发明发明发明发明发明发明发明发明发明发明发明发明发明发明发明发明发明发明发明发明发明发明发明发明发明Conductor device or liquid crystal display device release composition. In particular, the invention can effectively remove the invention during the preparation process.

【先前技術】電路之類的微電路圖案_，其類似物之薄層，—屉本„ ^ 層光阻被均勻的塗佈在表面上將該層光阻曝光並顯影士、* ^ 顯影成為一光阻圖案，之後，以為光罩選擇性的蝕刻該光阻圖案下的薄層，最後再上的光阻完全移除。微影蝕刻來形成半導體積或TFT-LCD電路時，必須以稀釋劑將玻璃基板或秒剩餘的不欲求光阻及曝光顯影前可能形成於基材底欲求膜層完全移除。傳統上，醚類和乙酸酯，例如溶纖（cellosolve)、乙酸酯、丙—醇醚、丙二醇醚乙酸酯等；酮類例如丙甲乙S同、甲異丁 _、環己酮等；及酯類例如乳酸曱酯酸乙酯、乙酸甲酯、乙酸乙酯、乙酸丁酯等，均曾被稀釋劑使用。舉例來說’曰本專利公開號Hei 4-4993 8揭示以醇單甲基醚乙酸醋（pr〇pylene glyC〇l monomethyl -LCD 物及之後光阻基材電路板上的不溶纖酮、、乳當作丙二 ether[Prior Art] A microcircuit pattern such as a circuit, a thin layer of its analog, a drawer, is uniformly coated on a surface, and the photoresist is exposed and developed to become a *^ a photoresist pattern, after which the mask is selectively etched to a thin layer under the photoresist pattern, and finally the photoresist is completely removed. When photolithographic etching is used to form a semiconductor product or a TFT-LCD circuit, it must be diluted. The agent may completely form the glass substrate or the remaining undesired photoresist and the exposure to the substrate before exposure and development. The film is completely removed. Traditionally, ethers and acetates, such as cellosolve, acetate, a propylene-alcohol ether, a propylene glycol ether acetate, etc.; a ketone such as propylene-ethyl S, methyl isobutyl ketone, cyclohexanone, etc.; and an ester such as ethyl lactate, methyl acetate, ethyl acetate, acetic acid Butyl esters, etc., have been used as diluents. For example, '曰专利 Patent Publication No. Hei 4-4993 8 discloses alcohol monomethyl ether acetate (pr〇pylene glyC〇l monomethyl-LCD and subsequent photoresist base) Insoluble ketones on the board, and milk as the propylene Ther

1306184 acetate，PGMEA)作為稀釋劑；且日本專利公開號 4-42523揭示以烧氧基丙酸烧基醋作為稀釋劑。這些均使用一種單一溶劑，.例如使用乙二醇單***乙 (ethylene glycol monomethyl ether acetate, EGMEA)' 醇單曱基醚乙酸酯、乳酸乙酯等。其具有下列限制。雖然乙二醇單***乙酸酯（EGMEA)具有極佳的度，但其具高度揮發性且易燃，更重要的是，EGMEA 成白血球細胞減少、流產等。在PGMEA的製備過程已知β-形式的PGMEA會造成胎兒畸形及不可避免的中毒。至於乳酸乙酯因其本身黏度較高且溶解度低之單獨使用時並無法提供足夠的清潔效果。諸如丙酮、酮等的溶劑由於低閃點（flashing point)之故，因此非使用。為解決上述問題，已研發出將習知溶劑混合使用法。日本專利公開號Hei 4-130715揭示以烷基丙酮酸甲乙酮組成的混合物作為稀釋劑；日本專利公開號 7-1 46 5 62揭示一種稀釋劑組合物，其包含丙二醇烷基丙酸烷基-3-烷氧酯。曰本專利公開號Hei 7-128867揭種稀釋劑組合物，其包含丙二醇烷基醚、乙酸丁酯及乙酯，或是一由乙酸丁酯、乳酸乙酯及丙二醇烷基醚酯所組成的混合物。日本專利公開號Hei 7-1 60008揭種稀釋劑組合物，其包含一由丙二醇烷基醚丙酸酯及嗣所組成的混合物，或一由丙二醇烷基醚丙酸酯及乙1306184 acetate, PGMEA) is used as a diluent; and Japanese Patent Publication No. 4-42523 discloses the use of alkoxypropionic acid vinegar as a diluent. These use a single solvent, for example, ethylene glycol monomethyl ether acetate (EMMAA)' alcohol monodecyl ether acetate, ethyl lactate or the like. It has the following limitations. Although ethylene glycol monoethyl ether acetate (EGMEA) has an excellent degree, it is highly volatile and flammable, and more importantly, EGMEA is reduced in white blood cells, abortion, and the like. In the preparation of PGMEA, the β-form PGMEA is known to cause fetal malformation and inevitable poisoning. As for the use of ethyl lactate alone due to its high viscosity and low solubility, it does not provide sufficient cleaning effect. Solvents such as acetone, ketone, etc. are not used because of their low flashing point. In order to solve the above problems, a conventional solvent mixing method has been developed. Japanese Patent Publication No. Hei 4-130715 discloses a mixture of methyl ethyl ketone as a diluent; Japanese Patent Publication No. 7-1 46 5 62 discloses a thinner composition comprising propylene glycol alkyl propionate alkyl-3 - alkoxylate. A thinner composition comprising propylene glycol alkyl ether, butyl acetate and ethyl ester, or a mixture of butyl acetate, ethyl lactate and propylene glycol alkyl ether ester is disclosed in Japanese Patent Publication No. Hei 7-128867. mixture. Japanese Patent Publication No. Hei 7-1 60008 discloses a thinner composition comprising a mixture of propylene glycol alkyl ether propionate and hydrazine, or a propylene glycol alkyl ether propionate and a

Hei 方法酸酯丙二溶解會造中，母體故，曱乙常難的方鹽與 Hei 醚及示一乳酸乙酸示一甲乙酸丁 6 1306184 酯所組成的混合物。美國專利第4，9 8 3，4 9 0號揭示一種稀釋劑組合物，其包含一種由丙二醇烷基醚乙酸酯及丙二醇烷基醚所組成的混合物。且美國專利第4,886,728號揭示一種稀釋劑組合物，其包含由乳酸乙酯及曱乙酮組成的混合物。但是，這些混合物對半導體裝置及液晶顯示裝置（其更積體化且體積更大）的製造而言也有限制。The Hei method acid ester is dissolved in the form of a mixture of a parent salt, a salt which is often difficult to form, and a Hei ether and a lactic acid acetic acid as a methyl methacrylate 6 1306184 ester. U.S. Patent No. 4,9,8,3,0,0,0, discloses a diluent composition comprising a mixture of propylene glycol alkyl ether acetate and propylene glycol alkyl ether. U.S. Patent No. 4,886,728 discloses a thinner composition comprising a mixture of ethyl lactate and acetophenone. However, these mixtures are also limited in the manufacture of semiconductor devices and liquid crystal display devices, which are more integrated and bulky.

舉例來說，一種包含丙酮酸烷酯溶劑及曱乙酮的混合物對光組層的主要組成 1，2-萘醌二疊氮光敏劑 (1，2-naph.thoquinone diazide)具有較低的溶解度。且，當使 .用由諸如丙二醇烷基醚丙酸酯及乙酸丁酯所組成的混合物這類高揮發性溶劑時，隨著基材的冷卻光阻層的厚度會出現大幅變化。當使用由諸如乳酸乙酯及甲乙酮所組成的混合物這類低揮發性溶劑時，基材的邊緣可能無法清除乾淨。特別是，已知諸如丙酮酸甲酯、丙酮酸乙酯等這類會腐蝕容器中的金屬部分。此外，當這些混合物被用在製造液晶顯示器所需的大型顏色玻璃基板上時，可能無法將不欲求的光阻完全清除。剩餘的光阻在顯影后可能形成一個帶（band)。【發明内容】本發明一目的係提供一種可清除光敏性光阻的稀釋劑組合物，其係能於短時間内有效清除黏附在基材（特別是用在製造液晶顯示器所需的大型顏色玻璃基板）邊緣及背面 7 1j〇6184 之不欲求光阻。劑蚯t赘明另—目的係提供一種可清除光敏性光阻的稀釋材—物，其係藉由降低介面處間隙而能有效地清潔一久【實施方式】釋劑f達上述目的，本發明提供-種可清除光敏性樹腊的稀运合物，其包含a) 一烷基醯胺及b) 一種酮類。該稀釋劑組合物可更包含c) 一種全氟烷基胺氧化物。包人較佳是，本發明該用來清除光敏性樹脂的稀釋劑組合物 =:a)l〇份至90份重量份的烷基醯胺，b) 1〇份至9〇份重伤的鲷類’纟c) 〇.〇〇1份至j份重量份的全氟烷基胺氧物。以下，將詳細說明本發明。本發明特徵為一種可清除光敏性光阻的稀釋劑組合 :，其係能於短時間内有效清除黏附在基材（特爿是用在製造液晶顯示器所需的大型顏色玻璃基板）邊緣及背面之不欲求光阻，因此該稀釋劑組合物係可用來製造半導體裝置或液晶顯示裝置。在本發明的稀釋劑紐合物中，a)該烷基醯胺；b)該_ι類及c)該全氟烷基胺氧化物之每一者係選用超純半導體等級者在VLSI階’係選用能通過〇1㈣濾膜者。該烷基醯胺得Ή改良組合物的溶解度。該燒基醯胺的燒基至少具有1個碳原子，較佳是2至5個碳原子。詳言之， 1306184 該炫基酿胺較佳是至少一選自下列的物質，包括N_甲基乙胺、二曱基曱醯胺及二甲基乙醯胺。若從溶解度的角度來考慮的話，較佳是選用二曱基乙醯胺。For example, a mixture comprising an alkyl pyruvate solvent and an acetophenone has a lower solubility for the 1,2-naphthyl diazide sensitizer (1,2-naph. thoquinone diazide), which is the main component of the photopolymer layer. . Further, when a highly volatile solvent such as a mixture of propylene glycol alkyl ether propionate and butyl acetate is used, the thickness of the cooling photoresist layer varies greatly with the substrate. When a low volatility solvent such as a mixture of ethyl lactate and methyl ethyl ketone is used, the edges of the substrate may not be cleaned. In particular, it is known that such as methyl pyruvate, ethyl pyruvate or the like can corrode metal portions in the container. In addition, when these mixtures are used on a large-color glass substrate required for the manufacture of liquid crystal displays, it may not be possible to completely remove the undesired photoresist. The remaining photoresist may form a band after development. SUMMARY OF THE INVENTION An object of the present invention is to provide a thin film composition capable of removing photosensitivity, which can effectively remove adhesion to a substrate in a short time (especially for large color glass required for manufacturing liquid crystal displays). Substrate) edge and back 7 1j〇6184 do not want photoresist. The present invention provides a dilute material capable of removing photosensitive photoresist, which can be effectively cleaned by reducing the gap at the interface. [Embodiment] The preparation agent f achieves the above object, and the present invention Provided is a dilute composition capable of removing photosensitive wax, which comprises a) a monoalkylamine and b) a ketone. The diluent composition may further comprise c) a perfluoroalkylamine oxide. Preferably, the thinner composition for removing the photosensitive resin of the present invention =: a) from 1 part to 90 parts by weight of alkylguanamine, b) from 1 part to 9 parts by weight of ruthenium. Class '纟c) 〇. 〇〇 1 part to 1 part by weight of perfluoroalkylamine oxide. Hereinafter, the present invention will be described in detail. The invention is characterized in that a thinner combination capable of removing photosensitive photoresist: the utility model can effectively remove the edge and the back of the substrate (especially the large-color glass substrate required for manufacturing the liquid crystal display) in a short time. The photoresist composition is not desired, and thus the thinner composition can be used to manufacture a semiconductor device or a liquid crystal display device. In the diluent conjugate of the present invention, a) the alkyl decylamine; b) the oxime and c) each of the perfluoroalkylamine oxides are selected from the ultrapure semiconductor grade at the VLSI stage. 'The system is selected to pass the 〇1 (four) filter. The alkylguanamine gives the solubility of the improved composition. The alkyl group of the alkylamine has at least 1 carbon atom, preferably 2 to 5 carbon atoms. In particular, 1306184 is preferably at least one selected from the group consisting of N-methylethylamine, dimethyl decylamine and dimethylacetamide. If it is considered from the viewpoint of solubility, it is preferred to use dimercaptoacetamide.

較佳是，每100份重量份的組合物中包含10份至9〇t 重量份之該烷基醯胺。如果該烷基醯胺的重量份低於10份，則其將無法溶解有色光阻，致使基材末磕仍會殘留光阻。指反的，如果該烷基醯胺的重量份超過90份，其揮發性將降低，使得EBR線變得不均勻，且在較極端的情況下，會出現滲入顏色光阻介面的情況。所選用的酮類較佳是至少一選自由環酮類及一具有 RkOR2化學式的化合物（其中Ri及R2為具有至少具有1個碳原子，較佳是2至5個碳原子的院基）所組成的群組中的化合物。詳言之，該酮類較佳是至少一選自由丙酮、甲異丙明、甲正-丙酮、甲乙酮、甲異丁酮、二異丁銅、環戊酮、環己酮及環庚_所組成之群族中的物質。較佳是’每100份重量份的组合物中包含1〇份至90份重量份之該酮類。如果該酮類的重量份低於10份，其揮發性將降低，使得EBR線變得不均勻。相反的，如果該酮類的重量份超過90份，其溶解有色光阻的能力將下降，致使基材邊緣仍會殘留光阻。本發明稀釋劑組合物可更包含全氟烷基胺氧化物。該全氟炫基胺氧化物對水及許多種溶劑均具有相當好的溶解度。較佳是，該全氟烷基胺氧化物的烷基具有約5至30個碳原子。 9 1306184 目前市售的全氟烷基胺氧化物商品的例子為Ashahi玻璃的S-141 。較佳是，每100份重量份的組合物中包含0.001份至1 份重量份之該全氟烷基胺氧化物。如果該全氟烷基胺氧化物的重量份低於0.001份，其清除效果將降低。相反的，如果該全氟烷基胺氧化物的重量份超過1份，其溶解光阻的能力將下降。Preferably, the alkylamine is contained in an amount of from 10 parts by weight to 9 parts by weight per 100 parts by weight of the composition. If the weight fraction of the alkylguanamine is less than 10 parts, it will not dissolve the colored photoresist, so that the photoresist remains in the final layer of the substrate. On the contrary, if the weight fraction of the alkylguanamine exceeds 90 parts, the volatility thereof will be lowered, so that the EBR line becomes uneven, and in a more extreme case, a color light-blocking interface may be infiltrated. Preferably, the ketone selected is at least one selected from the group consisting of cyclic ketones and a compound having the formula RkOR2 wherein Ri and R2 are a group having at least one carbon atom, preferably 2 to 5 carbon atoms. Compounds in the group consisting of. In particular, the ketone is preferably at least one selected from the group consisting of acetone, mesopropylamine, methyl-acetone, methyl ethyl ketone, methyl isobutyl ketone, diisobutyl copper, cyclopentanone, cyclohexanone, and cycloheptane. The material in the group of people. Preferably, the ketone is contained in an amount of from 1 part to 90 parts by weight per 100 parts by weight of the composition. If the ketone is less than 10 parts by weight, the volatility will be lowered, making the EBR line uneven. On the contrary, if the ketone is more than 90 parts by weight, the ability to dissolve the colored photoresist will be lowered, so that the photoresist remains on the edge of the substrate. The diluent composition of the present invention may further comprise a perfluoroalkylamine oxide. The perfluoroxylamine oxide has a fairly good solubility for water and many solvents. Preferably, the alkyl group of the perfluoroalkylamine oxide has from about 5 to 30 carbon atoms. 9 1306184 An example of a commercially available perfluoroalkylamine oxide commodity is Ashahi Glass S-141. Preferably, the perfluoroalkylamine oxide is contained in an amount of from 0.001 part by weight to 1 part by weight per 100 parts by weight of the composition. If the parts by weight of the perfluoroalkylamine oxide is less than 0.001 part, the scavenging effect will be lowered. On the contrary, if the parts by weight of the perfluoroalkylamine oxide exceeds 1 part, the ability to dissolve the photoresist will decrease.

本發明的稀釋劑組合物可用來清除一光阻。亦即，藉由浸泡或喷灑該稀釋劑組合物，可清除黏附在基材邊緣及背面之不欲求光阻。所浸泡或喷灑之該稀釋劑組合物的用量控制視光阻種類及膜層厚度而定。以下，將藉由實施例詳細說明。但是，該等實施例係供闡述本發明内容之用，本發明範疇並不僅限於所揭示實施例。實施例以下列方式製備一基材試樣。使用一直徑為5英吋的二氧化矽基材。該基材係於包括過氧化氫及硫酸的兩種溶液中清洗，分別浸泡於每一溶液中 5分鐘’然後再以超純水清洗。此過程係以特殊清潔設備來執行。之後，以旋乾機（VERTEQ之SRD 1 800-6)將基材旋乾。以旋塗機（韓國半導體系統之EBR TRACKER)在基材上塗佈一層預定厚度的光阻。旋塗製程如下。將1 0毫升的光阻層組合物滴在靜止的 10 1306184 基材中央。之後，旋塗機以300 rpm的速度旋轉3秒的方式進行塗佈。接著，在500 rpm速度下旋轉以獲得具欲求厚度的光阻層，旋轉時間為2 5秒。實施例1至5 每一稀釋劑組合物的組成及其含量如表1所示（單位：重量份）。The thinner composition of the present invention can be used to remove a photoresist. That is, by soaking or spraying the thinner composition, the undesired photoresist adhered to the edges and the back of the substrate can be removed. The amount of the diluent composition soaked or sprayed is controlled depending on the type of the photoresist and the thickness of the film. Hereinafter, the details will be described by way of examples. However, the examples are for illustrative purposes, and the scope of the invention is not limited to the disclosed embodiments. Examples A substrate sample was prepared in the following manner. A 5 inch diameter cerium oxide substrate was used. The substrate was washed in two solutions including hydrogen peroxide and sulfuric acid, each immersed in each solution for 5 minutes' and then washed with ultrapure water. This process is performed with special cleaning equipment. Thereafter, the substrate was spin-dried by a spin dryer (VERDQ SRD 1 800-6). A predetermined thickness of photoresist was applied to the substrate by a spin coater (EBR TRACKER of the Korean semiconductor system). The spin coating process is as follows. 10 ml of the photoresist layer composition was dropped in the center of the stationary 10 1306184 substrate. Thereafter, the spin coater was applied by spinning at 300 rpm for 3 seconds. Next, it was rotated at a speed of 500 rpm to obtain a photoresist layer having a desired thickness, and the rotation time was 25 seconds. Examples 1 to 5 The composition and content of each of the thinner compositions are shown in Table 1 (unit: parts by weight).

[表1] 分類 DMAc 丙酮 CXN PGME PGMEA nBA S 實施例 1 70 30 - - - - - 2 70 30 - - - - 0.5 3 10 - 90 - - - 4 10 - 90 - - 0.5 比較實施例 1 - - 50 - 50 - 2 - 70 30 _ - 3 - - - - 50 50 - 4 - 50 - 50 - - - 5 50 - - - 50 - 註） 1. DMAc =二曱基乙醯胺 2. CXN =環己酮 3. PGME =丙二醇單曱醚 4. PGMEA =丙二醇單甲醚乙酸酯 5. nBA =乙醇酸丁酯 6. S =全氟烷基胺氧化物（Ashahi玻璃的S-141) 1306184 產-^L不欲求的弁.陌屉將一光阻層組合物塗佈在5英叶的二氧化梦基材上。以實施例1至4及比較實施例5至9的豨釋劑組合物分別來清除基材邊緣的光阻層（邊緣珠粒清除測試（Edge bead removing test):以下簡稱EBR測試）。在EBR測試中，使用塗佈光阻層時相同的旋塗機。經由EBR喷嘴將表1的每一稀釋劑組合物喷在已塗了表[Table 1] Classification DMAc Acetone CXN PGME PGMEA nBA S Example 1 70 30 - - - - - 2 70 30 - - - - 0.5 3 10 - 90 - - - 4 10 - 90 - - 0.5 Comparative Example 1 - - 50 - 50 - 2 - 70 30 _ - 3 - - - - 50 50 - 4 - 50 - 50 - - - 5 50 - - - 50 - Note) 1. DMAc = dimercaptoacetamide 2. CXN = ring Hexanone 3. PGME = propylene glycol monoterpene ether 4. PGMEA = propylene glycol monomethyl ether acetate 5. nBA = butyl glycolate 6. S = perfluoroalkylamine oxide (S-141 of Ashahi glass) 1306184 - ^L Undesirable 弁. A dye layer composition is coated on a 5 inch leaf dioxide dioxide substrate. The release layer compositions of Examples 1 to 4 and Comparative Examples 5 to 9 were respectively used to remove the photoresist layer at the edge of the substrate (Edge bead removal test: hereinafter referred to as EBR test). In the EBR test, the same spin coater was used when applying the photoresist layer. Each of the thinner compositions of Table 1 was sprayed onto the coated table via an EBR nozzle

2所不光阻層組合物的基材上，於表3所示的條件下清除該基材邊緣的球形光敏物質。每一稀釋劑組合物係由一配有加On the substrate of the two photoresist layer compositions, the spherical photosensitive material at the edge of the substrate was removed under the conditions shown in Table 3. Each thinner composition is made up of one

壓闊的加壓桶中餵入喷嘴中。壓力設定為1 _〇Kgf且自EBR 喷嘴離開的稀釋劑組合物的流速設定為每分鐘1〇至2〇毫升。每—光敏樹脂組合物的EBR測試結果示於表4中。 [表2]The pressurized barrel is fed into the nozzle. The flow rate was set to 1 _ 〇 Kgf and the flow rate of the diluent composition leaving the EBR nozzle was set to 1 Torr to 2 Torr per minute. The EBR test results for each photosensitive resin composition are shown in Table 4. [Table 2]

1306184 [表3] EBR測試條件分類旋塗速度（rpm) 時間（秒）懸垂型 300 3 旋塗型 500 25 EBR 1 150 13 EBR 2 150 15 乾燥 700 7 顯影視光阻層而定1306184 [Table 3] EBR test conditions Classification Spin coating speed (rpm) Time (seconds) Suspended type 300 3 Spin coating type 500 25 EBR 1 150 13 EBR 2 150 15 Drying 700 7 Development Depending on the photoresist layer

[表4] 每一光阻層組合物的EBR測試結果分類實施例比較實施例 1 2 3 4 1 2 3 4 5 樹脂型黑基質 EBR後的尾部延長 0 ◎ 0 〇 X X X Δ Δ EBR後的均勻性 ◎ ◎ 0 0 X X X Δ Δ EBR後出現黑色層 ◎ ◎ Δ 0 X X X X X 顯影候出現剝離 0 ◎ Δ 0 X X X X X 紅 EBR後的尾部延長 0 ◎ 0 0 X X X Δ Δ EBR後的均勻性 ◎ ◎ 0 0 X X X Δ Δ EBR後出現黑色層 ◎ ◎ Δ 0 X X X X Δ 顯影候出現剝離 0 ◎ Δ 0 X X X X Δ 綠 EBR後的尾部延長 0 ◎ 0 0 X X X Δ Δ EBR後的均勻性 ◎ ◎ 0 〇 X X X Δ Δ EBR後出現黑色層 ◎ ◎ Δ 0 X X X X Δ 顯影候出現剝離 0 ◎ Δ 0 X X X X Δ 13 1306184 藍 EBR後的尾部延長 0 ◎ 0 0 X X X Δ Δ EBR後的均勻性 ◎ ◎ 0 0 X X X Δ Δ EBR後出現黑色層 ◎ ◎ Δ 0 X X X X Δ 顯影候出現剝離 0 ◎ Δ 〇 X X X X Δ 在表4中，顯影係藉由旋轉塗佈一 JSR顯影液100的稀釋液於基材上來進行，該基材係已經經過光阻塗佈、喷灑稀釋劑及預塗佈等約60秒的製程》[Table 4] EBR test results of each photoresist layer composition classification example Comparative Example 1 2 3 4 1 2 3 4 5 Resin type black matrix EBR tail extension 0 ◎ 0 〇 XXX Δ Δ EBR uniformity ◎ ◎ 0 0 XXX Δ Δ EBR appears black layer ◎ ◎ Δ 0 XXXXX Development occurs peeling 0 ◎ Δ 0 XXXXX Red EBR tail extension 0 ◎ 0 0 XXX Δ Δ EBR uniformity ◎ ◎ 0 0 XXX Δ Δ EBR appears black layer ◎ ◎ Δ 0 XXXX Δ development occurs peeling 0 ◎ Δ 0 XXXX Δ Green EBR tail extension 0 ◎ 0 0 XXX Δ Δ EBR uniformity ◎ ◎ 0 〇 XXX Δ Δ EBR Black layer ◎ ◎ Δ 0 XXXX Δ Development peeling occurs 0 ◎ Δ 0 XXXX Δ 13 1306184 Tail extension after blue EBR 0 ◎ 0 0 XXX Δ Δ Uniformity after EBR ◎ ◎ 0 0 XXX Δ Δ Black after black Layer ◎ Δ Δ 0 XXXX Δ Development peeling occurs 0 ◎ Δ 〇 XXXX Δ In Table 4, development is performed by spin coating a dilution of a JSR developer 100 onto a substrate which has passed through the light. Resistance Coating, spraying thinner and pre-coating process for about 60 seconds

註： ◎=邊緣很乾淨〇 =線性邊緣（80%或以上） △=因稀釋劑溶解所致的邊緣變形 χ =發生在邊緣的膜層尾部延長Note: ◎=The edge is very clean 〇=Linear edge (80% or more) △=Edge deformation due to dissolution of the diluent χ = The tail of the film occurs at the edge

如表4所示，所有本發明的稀釋劑組合物（實施例工至 4)對所有光阻層都展現出極佳的ebr能力（邊緣很乾淨）且可將顯景/後的剝離物質完全清除。且，噴灑了該稀釋劑組合物，基材上並沒有任何殘留的膜層。特別是，包含全_基胺物=稀釋劑組合物（實施例2和句的效果遠較實施例1 3來得優越。此結果顯示，添加全麁掠其睑此、劑组合物中可改善其料光阻的能Γ 於稀釋下，：二：：明的稀釋劑組合物在峨條件改變的情況了，准持較佳的橫斷面。此代表本可在多種舳w +I明的稀釋劑组合物，兄下提供較佳的清除光阻能力，稀釋劑细入此*、刀也氣明本發明的 ^ 較習知的稀釋劑組合物來得穩定。所述，本發明用來清除光阻的稀釋劑組合物可在液晶 14 1306184 顯示裝置（特別是大型顏色玻璃基板）製造過程中有效的清除黏附在基材邊緣及背面等處的不欲求光阻。此外，其亦可清除介面處的剩餘薄膜層及降低介面間高度差異，致能更有效的清除基材。因此，可用於多種製程中以提供經濟效益、簡化製程及改善良率等。As shown in Table 4, all of the thinner compositions of the present invention (Examples 4 to 4) exhibited excellent ebr capabilities for all of the photoresist layers (the edges were very clean) and the visible/post release material was completely Clear. Also, the thinner composition was sprayed without any residual film layer on the substrate. In particular, it comprises a full-ylamine = thinner composition (the effect of Example 2 and the sentence is far superior to that of Example 13. This result shows that the addition of the whole smashing agent can improve the composition thereof. The resistance of the material resist is dilute, and the second:: thinner thinner composition changes the condition of the crucible, and the cross section is better. This represents the dilution of the various 舳w + I The composition of the composition provides a better ability to remove light, and the diluent is finely entangled into the film, and the knives are also visibly stabilized by the conventional thinner composition of the present invention. The resistive thinner composition can effectively remove the undesired photoresist adhered to the edge and the back of the substrate during the manufacturing process of the liquid crystal 14 1306184 display device (especially the large-color glass substrate). In addition, it can also clear the interface. The remaining film layer and the reduced height difference between the interfaces enable more efficient removal of the substrate. Therefore, it can be used in various processes to provide economic benefits, simplify the process and improve the yield.

習知技藝人士從上述說明中可輕易了解本發明特徵，在不蜂離本發明範疇下，可對本發明作不同程度的變化或修改’以達本發明所揭示的相同目的。該等變化或修改仍應視為本發明附隨申請專利範圍所定義的範疇。A person skilled in the art can readily appreciate the features of the present invention from the above description, and the present invention may be varied or modified to the same extent as disclosed in the present invention. Such changes or modifications are still considered to be within the scope of the invention as defined by the scope of the appended claims.

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Claims

1306184 拾、申請專利範圍 1. 一種用來清除光阻層的稀釋劑組合物，其至 a) —烷基醯胺；及 b) —酮類。少包含：1306184 Pickup, Patent Application Range 1. A thinner composition for removing a photoresist layer, to a) alkanoguanamine; and b) a ketone. Less include:

2.如申請專利範圍第1項所述之稀釋劑組合物 a) 1 0份至90份重量份的烷基醯胺；及 b) 1 0份至90份重量份的酮類。，其包含： 3.如申請專利範圍第1項所述之稀釋劑組合物含c) 一全氟焼·基胺氧化物。 4.如申請專利範圍第3項所述之稀釋劑組合物 a) 1 0份至90份重量份的烷基醯胺； b) 1 0份至90份重量份的酮類；及 c) 0.001份至1份重量份的全氟烷基胺氧化物。，其更包，其包含：2. The thinner composition according to claim 1 a) 10 to 90 parts by weight of a alkylguanamine; and b) 10 to 90 parts by weight of a ketone. And comprising: 3. The thinner composition as described in claim 1 containing c) a perfluoroindolylamine oxide. 4. The thinner composition as described in claim 3, a) from 10 parts to 90 parts by weight of alkylguanamine; b) from 10 parts to 90 parts by weight of ketone; and c) 0.001 Parts to 1 part by weight of perfluoroalkylamine oxide. , its more package, which contains:

5.如申請專利範圍第1至4項任.一項所述稀之物，其中該烷基醯胺是至少一選自由N-曱基乙醯胺甲醯胺、及二甲基乙醯胺所組成之族群中的至少一 6.如申請專利範圍第1 -4項所述之釋劑組合物酮類是至少一選自由丙酮、甲異丙酮、甲正-丙酮、甲異丁酮、二異丁酮、環戊酮、環己酮及環庚酮所釋劑組合、二曱基者。，其中該甲乙酮、組成之群 16 1306184 族中的物質。 7.如申請專利範圍第3或4項所述之釋劑組合物，其中該全氟烷基胺氧化物的烷基具有約5至3 0個碳原子。5. The thin matter according to any one of claims 1 to 4, wherein the alkylguanamine is at least one selected from the group consisting of N-mercaptoacetamide, dimethylamine, and dimethylacetamide. At least one of the constituent groups of the composition, wherein the ketone of the release composition according to any one of claims 1 to 4 is at least one selected from the group consisting of acetone, methyl isopropanone, methyl-acetone, methyl isobutyl ketone, and A combination of isobutyl ketone, cyclopentanone, cyclohexanone and cycloheptanone, and a diterpene group. , wherein the methyl ethyl ketone, the group of substances in the group 16 1306184. 7. The release composition of claim 3, wherein the alkyl group of the perfluoroalkylamine oxide has from about 5 to about 30 carbon atoms.

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