1304512 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種液晶顯示器（Liquid Crystal Display，LCD)及其製造方法，且特別是有關於一種薄膜電晶體 液晶頒示器（Thin Film Transistor LCD，TFT-LCD)及其製造 方法。 【先前技術】 隨著科技之進步，TFT-LCD在市場上日漸扮演起重要的角 色。尤其在目前通訊業極其發達的時代，其係可應用於個人數位 助理、手機及電腦之顯示螢幕中，極具市場價值。現今較先進的 TFT-LCD製程，係為矩陣上彩色濾光片（c〇1〇r—Filter〇nArray， C〇A)製程。其係將TFT及彩色濾光片（color filter)做在同一 塊玻璃基板上，用以改#以往將二者分別做在二塊玻璃基板上時 之對位不易，以及開口率低的缺點。 玆將傳統之使用C0A製程之液晶顯示器之架構簡述如下 兹以解=度為1G24’之液晶顯示器為例，其係具有1〇24χ76 個顯不^元，每個顯示單元係分別具有一紅色畫素、一綠色^ =i色畫素。於每個畫素中，—共同電極係形成於上玻拜 面上。而在下玻璃基板之上表面上，則形成有用c 匕制-旦素電極之薄膜電晶體與—儲存電荷之電容電極。薄港 閘極係與掃描線電性連接，而薄膜電晶體 議電性連接。而畫素電極則是透過保護層上之_ vcontact hole)與薄膜電晶體之汲極電性 而、广曰— 於上玻璃基板與下玻躲板之間。 接°巾1則_ 傳統使用⑽製程之薄膜電晶體液晶顯示器的製造 綠不於第1A圖至第1F圖中。請先參照第1A圖。首先，提供_ 1304512 破璃基板100，且於玻璃基板100的上方形成一第一金屬層，並 利用微影與蝕刻技術圖案化此第一金屬層，以形成薄膜電二體之 閘極105。 — 請參照第1B圖。於閘極105形成之後，一介電層11〇係覆 蓋於閘極105上方。然後，一非晶石夕（am〇rph〇us & )層係形成 於閘極105之上，並利用微影與蝕刻製程以形成一通道1丨2。 ^請參照第1C圖。一第二金屬層係接著形成於通道112及介 電層110之上，並利用微影與蝕刻製程，對第二金屬層進行圖案 化的製程，以形成一源極115與一汲極12〇。之後，係形成一保 護層124於源極115與汲極120之上。 請參照第1D圖。覆蓋-由負光阻組成之色阻層13()於整個 形成有薄膜電晶體之玻璃基板咖之上，且以與玻璃基板⑽呈 有同樣面積大小的大光罩（圖中杨示出），自玻璃基板1〇〇上 方進行曝光及顯影。接著，去除因光罩遮蔽而未曝光之汲極12〇 上方由負光阻組成之色阻層副，使之暴露出部分之保護層124。 •請參照第1E圖。覆蓋-有機層14〇，且定義有機層14〇，以 曝路出部分之保護層124。然後，以有機層14()為罩遮，進行乾 飯刻（dry etching)製程，以去除暴露之部分的保護層124，以在 及極120上方形成一接觸洞150。 職W。形成—畫素€極副。畫素電極160係透 過接觸洞15 0 (如第1 e ί® Φ糾a -、 乐比圚中所繪不）而與汲極120電性連接，且 (Indiuffl Ti, Oxide ^ ITO) 中，需使5盘破：】.C0A•製程之薄膜電晶體液晶顯示器的製程 進行：光制；才1具有问樣之面積大小的大光罩來對色阻層 •之：光：二 晶顯示器面板逐漸增大的趨勢之下，所 :大先罩之大小與成本亦隨之加大。如此，將使得傳统之⑽ 涛膑電晶體液晶顯示器之所需之生產成本過高。， 1304512 【發明内容】 有鑑於此，本發明的目的就是在提供一種薄膜電晶體液晶顯 示器及其製造方法，目的為使光罩的面積可以有效縮小，使光罩 的費用可以降低，以減低成本。 根據上述目的，本發明提出一種薄膜電晶體液晶顯示器之製 造方法，此薄膜電晶體液晶顯示器係具有複數個晝素。此方法包 括：形成薄膜電晶體於基板上方；形成保護層於薄膜電晶體之 上；覆蓋色阻層；使用一光罩，自基板下方對部分晝素所對應之 晝素區域進行曝光，並持續使光罩與基板產生相對運動，以對其 他晝素所對應之畫素區域依序進行曝光；自基板上方進行顯影； 去除部分之未曝光的色阻層；覆蓋一有機層；定義有機層與保護 層，以形成一接觸洞；以及形成透過接觸洞而與汲極電性連接的 畫素電極。 本發明另外提出一種薄膜電晶體液晶顯示器，係具有元件區 與透光區，透光區係鄰接於元件區。此薄膜電晶體液晶顯示器包 括：基板；薄膜電晶體，係形成於基板上之元件區，薄膜電晶體 係具有源極、閘極與汲極；介電層，用以覆蓋閘極；色阻層，係 形成於基板上之透光區；有機層，係覆蓋於薄膜電晶體與色阻層 上方，有機層並具有一接觸洞，用以曝露部分之汲極；以及畫素 電極，係形成於有機層之上，畫素電極係透過接觸洞而與汲極電 性連接。 為讓本發明之上述目的、特徵、和優點能更明顯易懂，下文 特舉一較佳實施例，並配合所附圖式，作詳細說明如下： 【實施方式】 本發明之主要精神在於，在C0A的製程中，以較小面積的濾 光片光罩取代習知之大光罩，來進行TFT-LCD之色阻層的曝光， 1304512 可有效降低光罩的成本。 本發明使用C0A製程之薄膜電晶體液晶顯示器之製造流程 係繪示於第2A圖至第2F圖中。首先，如第2A圖所示，提供一 玻璃基板200，且於玻璃基板200的上方形成一第一金屬層，並 利用微影與蝕刻技術圖案化此第一金屬層，以形成薄膜電晶體之 閘極205。 接著，如第2B圖所示，於閘極205形成之後，將一介電層 210覆蓋於閘極205上方。然後，形成一非晶矽層，並利用微影 與蝕刻製程以形成一通道212於閘極205之上。 之後，如第2C圖所示，形成一第二金屬層於通道212之上， 並利用微影與蝕刻製程，對第二金屬層進行圖案化，以形成源極 215與汲極220。之後，更形成一保護層224於源極215與汲極 220之上。 然後，如第2D圖所示，覆蓋一由負光阻組成之紅色阻層230 於整個形成有薄膜電晶體之玻璃基板200之上，並使用本發明之 小尺寸之濾光片光罩，自玻璃基板200下方進行背面曝光。然後， 自玻璃基板200上方進行顯影以去除未曝光之色阻，以形成直條 狀（stripe)排列之紅色色阻層，之後再重複相同步驟以分別形成 直條狀排列之綠色色阻層及藍色色阻層。 接著，如第2E圖所示，覆蓋一用以平坦化之有機層240， 且定義有機層240,使之曝露出部分之保護層224。然後，以有 機層240為罩遮，進行乾蝕刻製程，去除暴露之保護層224，以 在汲極220上方形成一接觸洞250。 最後，如第2F圖所示，形成一畫素電極260。晝素電極260 係透過接觸洞250(如第2E圖中所繪示）而與汲極220電性連接， 且此晝素電極260可由氧化銦錫所組成。 茲針對第2D圖之形成紅色色阻層、綠色色阻層或藍色色阻 1304512 層=製程更進—步地敘述如下。請參照第3 ®，其所繪示乃形成 有薄膜電晶體與色阻層之玻璃基板2〇〇與濾光片光罩34〇之相對 位置示意®。為了形成沿方向延伸之直條狀排狀紅色色阻 層、綠色色阻層或藍色色阻層，遽光片光罩34〇上係具有複數個 呈規則排列之開口 342。 明同時參考第4圖，其所繪示乃使用第3圖之濾光片光罩 340,從玻璃基板之下方進行曝光時，光罩上複數個開口⑽ 與曝光區之位置關係圖。於第4圖中，每個紅色畫Η、綠色畫 素G與藍色晝素Β係各對應至—條資料線·與—條掃描線 綱，並分別由一個薄膜電晶體權所控制。由於掃描線4〇4 與，膜電晶體4G6之閑極係由第一金屬層所形成，而資料線4〇2 與薄膜電晶體4G6之源極與沒極係由第二金屬層所形成，故當 光源由玻璃基板_下方進行照射時（即背面曝光），光線係益 法通過由掃描線綱、資料線術、與薄膜電晶體綱所組成 之疋件區。 先以形成紅色色阻層為例做說明。當將本發明之濾光片光罩 340置於玻璃基板_之下方，再由玻璃基板·之下方對色阻 2 23〇進㈣光時，光線在通過由鮮的複數個開口⑽後，部 分光線會被掃描線404、資料線4〇2、與薄膜電晶體偏所組成 元件區所遮蔽。所以，本方法實際上之曝光區域·僅為元 件區以外的部分。 光罩開口 342之寬度約略為一個畫素之寬度，而長度則視光 全兵光學系統之最佳搭§&狀況而定（自—個畫素之長度至數十個 j之長度皆可）。#部分紅色畫素完成曝光之後，玻璃基板200 ^先片光罩34G之間沿著γ方向產生相對運動，以使光罩上的 硬文個開口 342可以沿著γ方向移動到對應至其他紅色畫素區域 之下方’以對其他畫素所對應之畫素區域依序進行曝光。例如 1304512 疋可以固疋濾光片光罩340之位置，而將破璃基板200沿著γ 方向移動，以完成所有紅色畫素區域之曝光。 ☆當從玻璃基板200上方進行顯影以去除未曝光之色阻之 後，沿著Υ方向延伸之直條狀排狀紅色色阻層係形成於曝光區 408中。而色阻層所在之處即為透光區。 此外由於形成紅色色阻層、綠色色阻層與藍色色阻層所需 之濾光片光罩的圖形是一樣的，故可使用同一個渡光片光罩34〇 來形成紅色色阻層、綠色色阻層與藍色色阻層。請參考第4圖。 當形成紅色色阻層之後，可將濾光片光罩34〇沿著與γ方向垂直 之X方向平移一個畫素之距離，再重複自玻璃基板2〇〇下方對所 设定的綠色畫素區域進行曝光之動作，並沿著γ方向移動玻璃基 板200以元成所有綠色晝素區域之曝光，並自玻璃基板2⑽上方 進行顯影製程，以形成綠色色阻層。完成之後，可再次地將濾光 片光罩340沿著X方向再平移一個畫素之距離，以續行製作藍色 色阻層之步驟。 使用較小尺寸之濾光片光罩同時從玻璃基板2〇〇下方進行 背面曝光的優點在於，可以巧妙地運用液晶顯示器中元件區之不 透光之4寸性，以達到遮光效果，使得薄膜電晶體及掃描線、資料 線上方之色阻層將不受光照，亦即使色阻層在顯影後將不留置於 薄膜電晶體及掃描線、資料線之上方，如第2d圖所示。 由於本發明之薄膜電晶體上方並無色阻層存在，如此，於第 2Ε圖所示之以有機層240為遮罩（Mask)，進行乾蝕刻製程以形成 接觸洞250時，將具有可快速形成接觸洞250且不污染機台的優 點。關於此點，將配合第5圖以做說明。 請參照第5圖，其所繪示乃當本發明之小尺寸之濾光片光罩 置於玻璃基板500之上方來進行曝光製程之後，所形成之液晶顯 示器之剖面圖。當使用第3圖及第4圖所示之本發明之濾光片光 1304512 罩來進行曝光之後，色阻層530將覆蓋於整個薄膜電晶體之上 方。而於覆蓋一有機層540，並定義有機層540之後，接觸洞542 係形成於汲極520之上方。之後，則以有機層540為罩遮，進行 乾蝕刻製程時，以去除接觸洞542下方之色阻層530與保護層 524。但是，由於色阻層530與保護層524合起來的厚度太厚， 使得乾蝕刻製程所需之時間相當地長。甚且，乾蝕刻時所除去之 色阻將可能污染到機台。而本發明之從玻璃基板下方進行曝光的 方式，即可可有效地避免從上方曝光時所產生的問題。 因此，本發明之特色即在於，藉由自玻璃基板200下方的曝 φ 光方式，使得使用小光罩以及相對移動式的曝光方式得以被有效 使用於COA薄膜電晶體液晶顯示器的製造上。如此，因為不需要 使用傳統製程中的大光罩來進行色阻層的曝光，僅需以小光罩來 進行由玻璃基板下方對色阻層進行曝光，所以本發明所需之光罩 面積的大小就能比傳統的作法小得多，因此將可有效節省光罩製 作的成本。 本發明上述實施例所揭露之薄膜電晶體液晶顯示器及其製 造方法，因所需之光罩面積可以有效減小，因此能夠大幅降低製 造之成本。 鲁 雖然本發明已以一較佳實施例揭露如上，然其並非用以限定 本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍内， 當可作各種之更動與潤飾，因此本發明之保護範圍當視後附之申 請專利範圍所界定者為準。 【圖式簡單說明】 第1A圖至第1F圖繪示乃傳統使用COA製程之薄膜電晶體液 晶顯示器的製造流程。 第2A圖至第2F圖繪示乃本發明使用COA製程之薄膜電晶體 π 1304512 液晶顯示器的製造流程。 第3圖繪示乃形成有薄膜電晶體與色阻層之玻璃基板與濾 光片光罩之相對位置示意圖。 第4圖繪示乃使用第3圖之濾光片光罩，從玻璃基板之下方 進行曝光時，光罩接觸洞與曝光區之位置關係圖。 第5圖繪示乃當本發明之小尺寸之濾光片光罩置於玻璃基 板之上方來進行曝光製程之後，所形成之液晶顯示器之剖面圖。 【主要元件符號說明】 100、 200、 500 :玻璃基板 105、 205 ： 閘極 110、 210 ： 介電層 112、 212 ： 通道 115、 215 ： 源極 120、 220 ： 汲極 124、 224、 524 :保護層 130、 230、 530 :色阻層 140、 240、 540 :有機層 150、 250、 542 :接觸洞 160、 260 ： 畫素電極 340 ： 渡光片光罩 342 : 光罩開口 402 ·· 資料 線 404 ： 掃描線 406 · 薄膜 電晶體 408 ： 曝光區 12The invention relates to a liquid crystal display (LCD) and a manufacturing method thereof, and in particular to a thin film transistor liquid crystal display (Thin Film Transistor). LCD, TFT-LCD) and its manufacturing method. [Prior Art] With the advancement of technology, TFT-LCD has gradually played an important role in the market. Especially in the era when the communication industry is extremely developed, its system can be applied to the display screen of personal digital assistants, mobile phones and computers, which is of great market value. Today's more advanced TFT-LCD process is a matrix color filter (c〇1〇r-Filter〇nArray, C〇A) process. The TFT and the color filter are formed on the same glass substrate, which is used to change the disadvantage that the alignment is not easy when the two are separately formed on the two glass substrates, and the aperture ratio is low. The structure of the conventional liquid crystal display using the C0A process is briefly described as follows. For example, a liquid crystal display with a degree of 1G24' is used, which has 1〇24χ76 display elements, and each display unit has a red color. Pixel, a green ^ = i color pixel. In each pixel, a common electrode system is formed on the upper glass surface. On the upper surface of the lower glass substrate, a thin film transistor using a c-tantalum electrode and a capacitor electrode for storing electric charge are formed. The thin port gate is electrically connected to the scan line, and the thin film transistor is electrically connected. The pixel electrode is transparent to the thin film transistor through the _ vcontact hole on the protective layer, and between the upper glass substrate and the lower glass.接 towel 1 _ The traditional use of (10) process of thin film transistor liquid crystal display manufacturing Green is not in Figure 1A to Figure 1F. Please refer to Figure 1A first. First, a _1304512 glass substrate 100 is provided, and a first metal layer is formed over the glass substrate 100, and the first metal layer is patterned by lithography and etching to form a gate electrode 105 of the thin film. — Please refer to Figure 1B. After the gate 105 is formed, a dielectric layer 11 is overlying the gate 105. Then, an amorphous layer (am〇rph〇us &) layer is formed over the gate 105, and a lithography and etching process is utilized to form a channel 1丨2. ^Please refer to the 1C chart. A second metal layer is then formed on the via 112 and the dielectric layer 110, and the second metal layer is patterned by a lithography and etching process to form a source 115 and a drain 12 . Thereafter, a protective layer 124 is formed over the source 115 and the drain 120. Please refer to the 1D chart. Covering - a color resist layer 13 composed of a negative photoresist is formed on the entire glass substrate on which the thin film transistor is formed, and has a large mask having the same area as the glass substrate (10) (shown by Yang in the figure) Exposure and development were performed from above the glass substrate. Next, the color resist layer pair composed of the negative photoresist above the unexposed drain 12 因 blocked by the mask is removed to expose a portion of the protective layer 124. • Please refer to Figure 1E. The organic layer 14 覆盖 is covered and the organic layer 14 定义 is defined to expose portions of the protective layer 124. Then, the organic layer 14 is used as a mask to perform a dry etching process to remove the exposed portion of the protective layer 124 to form a contact hole 150 over the gate 120. Job W. Forming - the prime of the picture. The pixel electrode 160 is electrically connected to the drain electrode 120 through the contact hole 150 (such as the first e ί® Φ correction a -, which is not depicted in the music), and (Indiuffl Ti, Oxide ^ ITO), Need to make 5 discs broken:].C0A•Process of thin film transistor liquid crystal display process: light system; only 1 large size mask with the size of the sample to the color resist layer: light: two crystal display panel Under the gradual increase trend, the size and cost of the large hood will also increase. As such, the production cost required for the conventional (10) 膑 膑 transistor liquid crystal display will be too high. SUMMARY OF THE INVENTION In view of the above, an object of the present invention is to provide a thin film transistor liquid crystal display and a method of fabricating the same, which aims to effectively reduce the area of the mask and reduce the cost of the mask to reduce the cost. . In accordance with the above objects, the present invention provides a method of fabricating a thin film transistor liquid crystal display having a plurality of halogens. The method comprises: forming a thin film transistor on the substrate; forming a protective layer on the thin film transistor; covering the color resist layer; using a photomask, exposing a portion of the halogen region corresponding to the halogen from the bottom of the substrate, and continuing Performing relative movement of the reticle and the substrate to sequentially expose the pixel regions corresponding to the other enamel; developing from above the substrate; removing part of the unexposed color resist layer; covering an organic layer; defining the organic layer and Protecting the layer to form a contact hole; and forming a pixel electrode electrically connected to the drain through the contact hole. The present invention further provides a thin film transistor liquid crystal display having an element region and a light transmissive region, the light transmissive region being adjacent to the element region. The thin film transistor liquid crystal display comprises: a substrate; a thin film transistor formed in an element region on the substrate; the thin film electro-crystal system has a source, a gate and a drain; a dielectric layer for covering the gate; and a color resist layer a light-transmissive region formed on the substrate; an organic layer covering the thin film transistor and the color resist layer, the organic layer having a contact hole for exposing a portion of the drain; and a pixel electrode formed in the Above the organic layer, the pixel electrode is electrically connected to the drain through the contact hole. The above described objects, features and advantages of the present invention will become more apparent from the following description. In the process of C0A, a large-area filter mask is used to replace the conventional mask to expose the color resist layer of the TFT-LCD, and the 1304512 can effectively reduce the cost of the mask. The manufacturing process of the thin film transistor liquid crystal display using the C0A process of the present invention is shown in Figs. 2A to 2F. First, as shown in FIG. 2A, a glass substrate 200 is provided, and a first metal layer is formed on the glass substrate 200, and the first metal layer is patterned by lithography and etching to form a thin film transistor. Gate 205. Next, as shown in Fig. 2B, after the gate 205 is formed, a dielectric layer 210 is overlaid over the gate 205. An amorphous layer is then formed and a lithography and etching process is utilized to form a via 212 over the gate 205. Thereafter, as shown in FIG. 2C, a second metal layer is formed over the via 212, and the second metal layer is patterned using a lithography and etching process to form the source 215 and the drain 220. Thereafter, a protective layer 224 is formed over the source 215 and the drain 220. Then, as shown in FIG. 2D, a red resist layer 230 composed of a negative photoresist is overlaid on the entire glass substrate 200 on which the thin film transistor is formed, and the small-sized filter mask of the present invention is used. Back exposure is performed under the glass substrate 200. Then, development is performed from above the glass substrate 200 to remove the unexposed color resist to form a stripe-arranged red color resist layer, and then the same steps are repeated to form a straight strip-shaped green color resist layer and Blue color resist layer. Next, as shown in FIG. 2E, an organic layer 240 for planarization is covered, and the organic layer 240 is defined to expose a portion of the protective layer 224. Then, the organic layer 240 is used as a mask to perform a dry etching process to remove the exposed protective layer 224 to form a contact hole 250 over the drain 220. Finally, as shown in Fig. 2F, a pixel electrode 260 is formed. The halogen electrode 260 is electrically connected to the drain 220 through the contact hole 250 (as shown in FIG. 2E), and the halogen electrode 260 may be composed of indium tin oxide. For the formation of the red color resist layer, the green color resist layer or the blue color resist 1304512 layer in the 2D pattern, the process is further described as follows. Refer to Section 3, which shows the relative position of the glass substrate 2〇〇 with the thin film transistor and the color resist layer and the filter mask 34〇. In order to form a straight strip-shaped red color resist layer, a green color resist layer or a blue color resist layer extending in the direction, the calender sheet mask 34 has a plurality of regularly arranged openings 342. Referring also to Fig. 4, there is shown a positional relationship between a plurality of openings (10) and an exposure region of the reticle when exposed from below the glass substrate using the filter mask 340 of Fig. 3. In Fig. 4, each of the red, green, and blue elements corresponds to a data line and a scanning line, and is controlled by a thin film transistor. Due to the scan line 4〇4, the idle electrode of the film transistor 4G6 is formed by the first metal layer, and the source and the gate of the data line 4〇2 and the thin film transistor 4G6 are formed by the second metal layer. Therefore, when the light source is irradiated from the underside of the glass substrate (ie, the back side exposure), the light system is passed through a component area composed of a scanning line, a data line, and a thin film transistor. First, the formation of a red color resist layer is taken as an example. When the filter mask 340 of the present invention is placed under the glass substrate _, and the light is blocked by the color resist 2 under the glass substrate, the light passes through the plurality of openings (10). The light is blocked by the scanning element 404, the data line 4〇2, and the component area of the thin film transistor. Therefore, the actual exposure area of the method is only a part other than the element area. The width of the reticle opening 342 is approximately one pixel width, and the length is determined by the optimal opt-in condition of the optical system (from the length of a pixel to the length of several tens of j). ). After the partial red pixel is exposed, the relative movement between the glass substrate 200 and the first reticle 34G is performed along the γ direction, so that the hard opening 342 on the reticle can be moved along the γ direction to correspond to other red. The bottom of the pixel area is exposed in sequence to the pixel regions corresponding to other pixels. For example, 1304512 can fix the position of the filter mask 340 and move the glass substrate 200 in the gamma direction to complete the exposure of all red pixel regions. ☆ After development from above the glass substrate 200 to remove the unexposed color resist, a straight strip-like red chromic layer extending in the Υ direction is formed in the exposed region 408. The place where the color resist layer is located is the light transmitting area. In addition, since the pattern of the filter reticle required for forming the red color resist layer, the green color resist layer and the blue color resist layer is the same, the same photocatalyst mask 34 可 can be used to form the red color resist layer, Green color resist layer and blue color resist layer. Please refer to Figure 4. After forming the red color resist layer, the filter mask 34 can be translated by a distance of one pixel along the X direction perpendicular to the γ direction, and then repeated from the glass substrate 2 to the set green pixel. The region performs an exposure operation, and moves the glass substrate 200 along the γ direction to form an exposure of all the green halogen regions, and performs a development process from above the glass substrate 2 (10) to form a green color resist layer. After completion, the filter mask 340 can be again translated by a distance of one pixel along the X direction to continue the step of fabricating the blue color resist layer. The advantage of using a smaller-sized filter mask while performing back-side exposure from under the glass substrate 2 is that the opaque 4 inch of the component area in the liquid crystal display can be skillfully utilized to achieve a light-shielding effect, so that the film The color resist layer above the transistor and the scan line and the data line will be unlit, and even if the color resist layer is developed, it will not remain on the thin film transistor and above the scan line and data line, as shown in Fig. 2d. Since there is no color resist layer on the film transistor of the present invention, the organic layer 240 is used as a mask in the second drawing, and a dry etching process is performed to form the contact hole 250, which can be rapidly formed. Contact hole 250 without contaminating the advantages of the machine. In this regard, it will be explained in conjunction with Figure 5. Referring to Fig. 5, there is shown a cross-sectional view of the liquid crystal display formed after the small-sized filter mask of the present invention is placed over the glass substrate 500 to perform an exposure process. After exposure using the filter light 1304512 of the present invention shown in Figures 3 and 4, the color resist layer 530 will overlie the entire thin film transistor. After the organic layer 540 is covered and the organic layer 540 is defined, the contact hole 542 is formed above the drain 520. Thereafter, the organic layer 540 is used as a mask, and during the dry etching process, the color resist layer 530 and the protective layer 524 under the contact hole 542 are removed. However, since the thickness of the color resist layer 530 and the protective layer 524 are too thick, the time required for the dry etching process is considerably long. Moreover, the color resistance removed during dry etching may contaminate the machine. Further, in the present invention, the exposure from the lower side of the glass substrate can effectively avoid the problems caused by exposure from above. Therefore, the present invention is characterized in that the use of a small mask and a relatively movable exposure mode can be effectively used in the manufacture of a COA thin film transistor liquid crystal display by the exposure of the light from the underside of the glass substrate 200. Thus, since it is not necessary to use a large mask in a conventional process for exposure of the color resist layer, it is only necessary to expose the color resist layer under the glass substrate with a small mask, so the area of the mask required for the present invention is The size can be much smaller than the traditional method, so it will effectively save the cost of reticle production. The thin film transistor liquid crystal display and the method of manufacturing the same disclosed in the above embodiments of the present invention can be effectively reduced in size by the required mask area, thereby greatly reducing the manufacturing cost. Although the present invention has been described above in terms of a preferred embodiment, it is not intended to limit the invention, and various modifications and refinements may be made without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims. [Simple description of the drawings] Figs. 1A to 1F show the manufacturing process of a thin film transistor liquid crystal display which is conventionally used in a COA process. 2A to 2F are views showing the manufacturing process of the thin film transistor π 1304512 liquid crystal display using the COA process of the present invention. Figure 3 is a schematic view showing the relative positions of the glass substrate and the filter reticle formed with the thin film transistor and the color resist layer. Fig. 4 is a view showing the positional relationship between the contact hole of the mask and the exposure region when the light is removed from the lower side of the glass substrate by using the filter mask of Fig. 3. Fig. 5 is a cross-sectional view showing the liquid crystal display formed after the small-sized filter mask of the present invention is placed over the glass substrate to perform an exposure process. [Main component symbol description] 100, 200, 500: glass substrate 105, 205: gate 110, 210: dielectric layer 112, 212: channel 115, 215: source 120, 220: drain 124, 224, 524: Protective layer 130, 230, 530: color resist layer 140, 240, 540: organic layer 150, 250, 542: contact hole 160, 260: pixel electrode 340: photoreceiver mask 342: mask opening 402 ·· Line 404: Scan Line 406 · Thin Film Transistor 408: Exposure Area 12