TWI302003B

TWI302003B - Method for processing a semiconductor wafer including back side grinding

Info

Publication number: TWI302003B
Application number: TW92124395A
Authority: TW
Inventors: Harrison Wesley; gore David; Vandamme Roland
Original assignee: Siltronic Ag
Priority date: 2003-09-03
Filing date: 2003-09-03
Publication date: 2008-10-11

Description

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五、發明說明（1) 一、【發明所屬之技術領域】由晶體錠製造半導體晶圓係藉一系列之加設計之每個步驟係使晶圓更接近符合合格晶 ςt ’所。每個步驟亦可對晶圓實施下一步驟加工作U二之規範除上一步驟戶斤留下之損傷。晶目規範視或移但通常晶圓必須加以適當加工俾正、背兩Ξΐ:;: 平整度係以兩種方式測得，其一，涵之總厚度變動（ττν)，其二，以SFQR表示之部^平日日整圓产表面性，該SFQR係對小框或稱作部位（通常約 ^、，由晶圓切割而成’作為成品晶片）之：析度之方法加以量測，籌形、具有更精細解 x2公厘或10公厘xl0公厘)内峰至谷之=(通:，^ 謂之高度變化閾值（HCT)特性。y成所 •s赍孫Λ #敗卞朴《瑕疵（例如：凹痕或孔蝕）通书係在務燈下猎晶圓表面之目視檢查加以偵檢。利甩一轉動盤錯或鋼絲鋸（、首先自晶體錠或晶體键段切片亦可使用一研磨装）清理作用，將黏附在晶圓表面之ί二曰：：隨後，耩超音波研移除，，晶圓獲得清㊣。之後，將晶圓之邊'緣研/ ;、月之直徑，並將邊緣之尖角施以削角成面加工變成圓，/如此則較不可能造成缺口或導致晶圓破裂。隨後，通常於兩個轉動盤之間並利用一研磨漿，將曰曰圓加以精研，使正、背兩面平整且相立平行。該精研加V. INSTRUCTIONS INSTRUCTIONS (1) I. [Technical field to which the invention pertains] The fabrication of a semiconductor wafer from a crystal ingot is carried out in a series of steps. The design of each step is to bring the wafer closer to the qualified crystal. Each step can also carry out the next step of the wafer plus the work of the U 2 specification, except for the damage left by the previous step. The crystal standard is viewed or shifted, but usually the wafer must be properly processed. Both the front and the back are:: The flatness is measured in two ways. One is the total thickness variation of the culvert (ττν), and the second is SFQR. The part of the ^ 系 ^ ^ ^ ^ ^ ^ ^ ^ ^ SF SF SF SF SF SF SF SF SF SF SF SF SF SF SF SF SF SF SF SF SF SF SF SF SF SF SF SF SF SF SF SF SF SF SF SF SF Shape, with a finer solution x2 mm or 10 mm x 10 mm) inner peak to valley = (pass:, ^ said height change threshold (HCT) characteristics. y Chengshen•s赍孙Λ#败卞朴瑕疵 (for example: dent or pitting) The book is checked by visual inspection of the surface of the wafer under the clerk. The 转动转动转动转动或或钢丝钢丝钢丝钢丝转动转动转动转动转动转动转动转动转动转动转动转动转动转动转动转动转动转动转动You can use a grinding device to clean the surface and attach it to the surface of the wafer:: Then, the ultrasonic wave is removed and the wafer is cleaned. After that, the edge of the wafer is edged. The diameter of the moon, and the sharp corners of the edges are rounded and turned into a circle, so that it is less likely to cause a gap or guide. Wafer breakage. Subsequently, the rotary disk is usually between two and using a slurry, to said lapping said circle to be the positive and back surfaces with flat and parallel to stand. The lapping plus

第4頁 1302003 五、發明說明（2) 除切片步驟之過程中鋸及鋸毁(若使用）所誃=傷。該精研加工通常可改良晶圓表面之平整 d;相互更平行，而且亦留下-個較切片損傷者^研加工之後，通常使用一混合酸或一驗性溶嘗：用，將兩個面加以化學蝕刻，以移除精研加工井（j妙j見晶圓之預定用途而$ ’至少將晶圓正面先(雖然奇面亦可隨後或與正面同時加以拋光）。拋三^ (也許）正面上實施外延層沉積及進一步納入積〈則’晶圓即可加以清理及檢查。一、【先前技術】辛氏所獲美國專利U.S· No. 6,214,7〇4中曾述後，對晶圓正面施以精細研磨，並要求：在 :驟J程中’該精研加工損傷仍原封不動地留在晶 :辛氏曾揭示：研磨正面之後，僅飯刻正面，晶北月兩面則同時拋光。辛氏曾揭示：將損傷保留在月面上，旨在於晶圓背面上容易實施吸氣作用。、范達姆等人所獲美國專利U.S. No. 6，114,245 f及：於先後實施晶圓精研及蝕刻之後，對晶圓正 Ϊ細研磨。范達姆亦曾不包含精研步驟中正面之精細研磨，及在一不包含精研步驟或蝕刻加工中之雙面精細研磨。三、【發明内容】在一種用以加工曾經由精研步驟加工之半導體造成之輕微之液或雨之損傷加以撤光之後體電路及：精該研磨圓背面圓之正晶圓之中亦曾面施以之加工步驟之晶圓之Page 4 1302003 V. INSTRUCTIONS (2) Saw and saw damage (if used) during the slicing step. The lapping process generally improves the flatness of the wafer surface; it is more parallel to each other, and also leaves a thinner than the sliced one. After the processing, a mixed acid or an experimental taste is usually used: The surface is chemically etched to remove the finishing processing well (see the intended use of the wafer and at least the front side of the wafer (although the odd side can be polished later or simultaneously with the front side). Perhaps) the deposition of epitaxial layers on the front side and the further incorporation of the wafers can be cleaned and inspected. 1. [Prior Art] After the US patent No. 6,214,7〇4, which was obtained by Xin, Fine-polishing the front side of the wafer, and requires: in the process of: J. The grinding damage remains intact in the crystal: Xin’s has revealed that after grinding the front, only the front of the meal, the two sides of Jingbei Simultaneous polishing. Sin has revealed that the damage is retained on the lunar surface, which is intended to easily perform the gettering effect on the back side of the wafer. Van Umm et al. obtained US Patent No. 6,114,245 f and: After performing wafer lapping and etching, the wafer is being folded. Fine grinding. Van Damme also did not include the fine grinding of the front side in the lapping step, and the double-side fine grinding without a lapping step or etching process. After the lightening of the slight liquid or rain damage caused by the semiconductor processed by the step-finishing process, the body circuit and the wafer of the processing step which has been applied to the wafer on the back surface of the round

1302003 五、發明說明（3) _____ 方法中，本發明之一個旦俾實質上消除精研加工ρ ^ &例包含··研磨晶圓之背面圓之背面及正面。晶圓^ 及隨後最好依序先後拋光晶而且最好是在精研之後=益=研磨最好是一種精細研磨，驟之情況下實施。曰曰曰圓背晶圓材料之其他步將正面加以撤光。乂扰^光。晶圓背面拋光後，最好四、【實施方式】如第一圖内所示，對來自第一個步驟係自錠或錠段切體錠之晶圓實施加工之沿長度方向實施修整、磨平該錠或錠段業經後，晶圓邊緣最好加以研磨，^考用之凹槽（痕）。之寸並形成適當構形之削角成面邊綾曰曰圓直扭減小至預期尺度通常係依照隨後加工將=入藉曰曰曰圓邊緣之形狀及角規範。曰曰圓、，，内入積體電路之要求而加以兮損=磨t後’曰曰曰圓之正面及背面帶有切片損傷，該抽傷包3鋸割所產生之錐角及彎曲、正1 不平行、晶圓厚度之變動及表面損_ $ 兩艢;W擒腺曰H1 k。隨後利用任何適當 :研以精研以減低切片損t。精研加工最好包 :分動合金盤之間並將以氧化铭為主要徑可加以調節以影響精研至預定曰，精研水内仏〇3之粒及影響所得精研損傷二；：回—移除量所需之時間超過15微米2 “以最低約7微米至不 1302003 五、發明說明（4) 精研加工實質上將切片損傷移除，抵且該平整且損傷更*。經精研之晶圓表* =圓之兩個面更達表：下之距離約與精研聚内所用微粒粒;瑕範… 精研加工之後，將晶圓加以清理 ς 清理步驟通常不會實質上移除晶圓材料。精研聚’ 之後，將晶圓背面施以研磨加工，為佳。最好，Β曰曰圓背面之精細研磨可實質上；二：磨加工。如以上所述’精研損傷之程度可依照精研加it損傷變動。在背面精細研磨加工中、曰曰圓材料之移除而 =微米至不超過約18微米為佳，尤以最低約取低超過約1 2微米之晶圓材料移除量最佳。十至不 •背面精細研磨步驟之實施最好利用一附有垂周邊緣研磨輪之裝置，亦即研磨輪圍繞一中心軸轉動及^ 研磨過程中，該中心軸與晶圓之外周或邊緣對正。在過程中，最好晶圓沿研磨輪相反之方向圍繞中心軸轉動磨日本迪斯可公司所製DFG 840研磨器係一適當研磨器例。风背面精細研磨加工中研磨輪之通常轉速至少約為3〇〇〇轉/分鐘’但以至少約為450 0轉/分鐘較佳，尤以約5〇〇〇轉 /分鐘至約6 0 0 〇轉/分鐘最佳。研磨輪朝向晶圓進給之進入，率通常為至少約〇·18微米/秒及不超過約1微米/秒。對最佳背面之進入速率以約0 · 3 3微米/秒最佳。研磨輪包含一表面，該表面最好係由嵌入樹脂基質之金剛石微粒所組成。通常，該等微粒至少如同約丨5 〇〇篩目1302003 V. INSTRUCTION DESCRIPTION (3) In the _____ method, one of the present invention substantially eliminates the lapping process. The example includes the back side and the front side of the back surface of the polished wafer. The wafer ^ and then preferably sequentially crystallized sequentially and preferably after lapping = benefit = the polishing is preferably a fine grinding, which is carried out in the case of a fine. The other steps of the round back wafer material are to remove the front side. Disturbing ^ light. After polishing the back side of the wafer, it is preferable to carry out the trimming and grinding of the wafer from the ingot or the ingot segment of the ingot in the first step, as shown in the first figure. After the ingot or ingot segment is finished, the edge of the wafer is preferably ground, and the groove (mark) used for the test is used. The size and shape of the chamfered surface of the appropriate configuration is reduced to the desired size, usually in accordance with the shape and angle of the edge of the rounded edge.曰曰 round,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, Positive 1 is not parallel, wafer thickness changes and surface loss _ $ two 艢; W 擒曰 H1 k. Subsequent use of any appropriate: research to reduce the slice loss t. The best package for fine grinding: the transfer between the alloy plates and the main diameter of the oxidation can be adjusted to affect the fine grinding to the predetermined enthalpy, the granules in the water 精3 and the influence of the lapping damage 2; The time required for the back-removal amount exceeds 15 μm 2 “from a minimum of about 7 μm to not 1302003. V. Description of the invention (4) The lapping process essentially removes the slice damage, which is flat and the damage is more *. Intensive wafer table* = two sides of the circle are even more table: the distance below is about the particle size used in the fine grinding; the fan... After the lapping, the wafer is cleaned ς The cleaning step is usually not substantial After removing the wafer material, it is better to apply the grinding process to the back side of the wafer. Preferably, the fine grinding on the back side of the round can be substantially; second: grinding processing. The degree of lapping damage can be varied according to the lint and it damage. In the fine grinding process on the back side, the removal of the round material is preferably from micron to no more than about 18 microns, especially at a minimum of about 1 2 or less. Micron wafer material removal is the best. Ten to no • back fine research Preferably, the step is carried out using a device with a peripheral edge grinding wheel, that is, the grinding wheel is rotated about a central axis and the grinding process is aligned with the outer circumference or edge of the wafer. The wafer is rotated around the central axis in the opposite direction of the grinding wheel. The DFG 840 grinder made by Japan Disco is a suitable grinder. The normal speed of the grinding wheel in the fine grinding process of the wind back is at least about 3〇〇〇. Rpm/min' is preferably at least about 450 rpm, especially about 5 rpm to about 6,000 rpm. The grinding wheel is oriented toward the wafer feed. Typically at least about 〇18 μm/sec and no more than about 1 μm/sec. The optimum rate of entry into the back is about 0 · 33 μm/sec. The grinding wheel contains a surface which is preferably Composed of diamond particles embedded in a resin matrix. Typically, the particles are at least as large as about 丨5 〇〇 mesh

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五、發明說明（5) 二例如：迪斯可公司出品之一 5/1〇研磨輪者，該公 =冒規範之粒徑為約5微米至約1〇微米。最好，該等微粒如同約2 0 00 _目，例如：迪斯可公司出品之一 4/6春研磨輪，該公司曾規範之粒徑為約*微来至約6微米。 f =背面精細研磨之過程中，最好使用一水溶液或其他二:液作為潤滑劑。另一種變通方式是，可使用其他型 =用以移除晶圓材料之裝置以替代該研磨器俾只質上消除精研損傷。之獨，最好用雷射將晶圓加以標誌以建立晶圓 =鉍碼二區分正面及背面。通常，在隨後加工程序中將正面用作積體電路之沉積裝置。，曰ί Ϊ I之後（尤以不到達晶圓背面精細研磨之後為佳）取好用鹼性溶液將晶圓加以清理酸溶液加以蝕刻。另一變通方,a ·—=後竑好用扣合 == 性溶液。咸信：若背面精細研磨加- 係在使用鹼性及/或酸性溶液德與滑劑。 /合履之後灵施，則需要較黏之潤好，施清理以結合使用超音波能源為佳。最好，在此步驟内晶圓材料之旦取及酿柯、、六：¾夕曰问以丄丨示里、勺為4微米。使用驗性及S夂性浴液之晶圓材料總移米。用酸敍刻移除晶圓材料約2°微米至約35微。蝕刻之後，晶圓所顯亍夕i 8微米至32微米為佳微乎為伟乂 : ： Ϊ總厚度變動(TTV)以低於約3. 〇 U水為佳，尤以低於約15微来更佳。研磨之後，可藉傳統方万法將日日0加以邊緣拋光，及一V. INSTRUCTIONS (5) For example, one of the 5/1 〇 grinding wheels produced by Disco, which has a particle size of about 5 microns to about 1 〇. Preferably, the particles are as about 200 00 mesh, such as one of the 4/6 spring grinding wheels produced by Disco, which has been sized to be from about *micron to about 6 microns. f = During the fine grinding of the back side, it is best to use an aqueous solution or other two: liquid as a lubricant. Alternatively, other types of devices for removing the wafer material can be used in place of the grinder to eliminate lint damage. Independence, it is best to use a laser to mark the wafer to create a wafer = weight two to distinguish the front and back. Typically, the front side is used as a deposition device for the integrated circuit in a subsequent processing procedure. After 曰ί Ϊ I (especially after not fine grinding on the back side of the wafer), the wafer is cleaned with an alkaline solution and etched with an acid solution. Another variation, a · —= 竑竑竑 = == sex solution. Say: If the back is finely ground plus - use alkaline and / or acidic solutions with a slip agent. / After the stalking, you need a more viscous moisturizing, and it is better to use cleaning in combination with ultrasonic energy. Preferably, in this step, the wafer material is taken and brewed, and the 6:3⁄4 曰曰丄丨、、、、、、、、、、、、、、、、、、、、、、 Total metering of wafer material using anatory and S-type baths. The wafer material is removed by acid to about 2 microns to about 35 microns. After etching, the wafer is displayed at 8 μm to 32 μm. The total thickness variation (TTV) is preferably less than about 3. 〇U water, especially less than about 15 μm. Better. After grinding, the edge of the day can be polished by the traditional method, and one

第8頁 1302003 五、發明說明（6) 邊緣拋光清理步驟等處理。之後’晶圓之背面最好藉化學-機械拋光（CMp)機（尤以使用一酸度值為約1 〇 · 5至1 2之膠體矽石研磨漿更佳）加以拋光。一個適當CMP機之實例是：亞利桑那州、詹德勒 SyeedFam-Ipec公司出品之Auriga c機器。最好，晶圓係藉真空作用安裝在一奥林匹亞式載具上，為實施背面拋光步驟無需晶圓之蠟安裝（使用Auriga c機器時之情形）。晶圓背面拋光最好能造成一鐘狀表面，亦即在僅移除約0.5微米晶圓材料之後，在霧燈下檢查無目視瑕疵。背面拋光之晶圓材料移除量以不超過約4微米為佳，尤以不超過約1· 75微米更佳。咸信：在此範圍内之背面拋光可使晶圓背面之平整作用達到最佳程度，士口此則有助於在隨後 :工中衣k 1平整之晶圓正面。通常，背面拋光加工超過約i.5分鐘内完成。另外一種方式，如下述正面力、> 力日口，者，曰曰圓月面可在一蠟安裝系統内實施拋光。日日圓正®以在背面&光之後實施抛光為佳。纟一適合 ^正面拋光方式中，於晶圓背面塗以熱黏躐囊糸統、藉壓蓋作用將晶_ $ ^ 拋光盤上。壓蓋之後在：平整(以氧化紹為佳) 化鋁拋光盤之間具有輕微黏：：=二對晶圓背面與氧晶圓背面業經整平，亦壓蓋過程中’相信。在隨後之拋光加卫中、，、，^圓之整體轉移至正面之表面平整化。晶圓背面係達到相則相對於乳化銘拋光盤加以咬相對於拋光盤平整之程度，在晶Page 8 1302003 V. Invention Description (6) Edge polishing cleaning steps and other treatments. Thereafter, the back side of the wafer is preferably polished by a chemical-mechanical polishing (CMp) machine (especially using a colloidal vermiculite slurry having an acidity value of about 1 〇 · 5 to 12). An example of a suitable CMP machine is the Auriga c machine from SyeedFam-Ipec, Zentler, Arizona. Preferably, the wafer is mounted on an Olympia carrier by vacuum, and no wafer waxing is required to perform the backside polishing step (when using the Auriga c machine). The backside polishing of the wafer preferably results in a bell-like surface, i.e., after removal of only about 0.5 micron of wafer material, inspection under fog lamps is visually obscured. The amount of wafer material removed from the back side is preferably no more than about 4 microns, and more preferably no more than about 1.7 microns. Xianxin: The backside polishing in this range can achieve the best leveling effect on the back side of the wafer. This is helpful for the subsequent wafer front surface. Usually, the backside polishing process is completed in about i.5 minutes. Alternatively, the front side force, > force day mouth, can be polished in a wax mounting system. It is preferable to perform polishing after the back & light. The first one is suitable for the front side polishing method. The back side of the wafer is coated with a hot adhesive capsule, and the crystal is _$ ^ polished on the disk. After the gland is: flat (preferably oxidized). The aluminum polishing disc has a slight stickiness::= two pairs of wafer back surface and oxygen wafer back surface are flattened, also during the gland process. In the subsequent polishing and garnishing, the whole of the circle is transferred to the surface of the front surface to be flattened. The back side of the wafer reaches the phase, and the bite is flattened relative to the polishing disk relative to the emulsified polished disk.

第9頁 1302003 五、發明說明（7)Page 9 1302003 V. Description of invention (7)

=驟内該平整度亦可改良至晶圓背面亦曾加以干整化之程度，正面亦將相對於曰 b 日加U 此整個晶圓之平整度獲得改‘於Ba固…以平整化’因實施晶圓正面拋光時係、使用―驗性保護膠體將精研、清理及/或蝕刻步驟所遺留在正面之殘磨留傷移除。在正面拋光步驟中晶圓正面之移除量通常為約8 微米至約15微米。在霧燈下檢查所得表面光亮如鏡且無任何損傷。通常，係用一塑膠刀使晶圓與氧化鋁拋光盤分開，留存在晶圓上殘餘蠟質係經由一清理步驟自背面移除。經過同樣加工步驟之許多晶圓隨後加以目視檢查是否有任何不規則情形並依照平整度及微粒污染程度加以分類。通常，視晶圓之預期用途而定，晶圓正面上是否以熱沉積法加上一外延矽薄層。此時晶圓即可予以加工納入積體電路或其他裝置中。沉積該外延層之後，依照本發明加工之晶圓在2 X 2框内所顯示之HCT低於22奈米及在1 0 X 10 框内者為低於7 0奈米。此處所述技術内容包含此處所揭示不同元件、特徵、功能及/或性質之新穎及非顯而易成組合及次組合。同樣地’若干申請專利範圍述及π —個"或π首個π元件或其相等物，應了解的是，該等申請專利範圍包含一個或更多個該等元件之合併，既不要求亦不排除兩個或更多個該等元件。咸信··下列諸申請專利範圍特別指出某些組合及次組合係朝向所揭示具體實施例中之一個而且係新穎及非顯而易The flatness can also be improved to the extent that the back side of the wafer has been dry-finished. The front side will also be corrected for the flatness of the entire wafer relative to 曰b. Due to the implementation of the front side of the wafer, the use of the "inspective protective colloid" to remove the residual grinding, cleaning and / or etching steps left in the front of the residual grinding. The amount of wafer front side removal during the front side polishing step is typically from about 8 microns to about 15 microns. The resulting surface was examined under a fog light as bright as a mirror without any damage. Typically, a plastic knife is used to separate the wafer from the alumina polishing disk, leaving the residual wax on the wafer removed from the back side by a cleaning step. Many wafers that have undergone the same processing steps are then visually inspected for any irregularities and classified according to flatness and particle contamination. Typically, depending on the intended use of the wafer, a thin layer of epitaxial germanium is added to the front side of the wafer by thermal deposition. The wafer can then be processed into integrated circuits or other devices. After depositing the epitaxial layer, the wafer processed in accordance with the present invention exhibits an HCT of less than 22 nm in a 2 X 2 frame and less than 70 nm in a 10 X 10 frame. The technical content described herein encompasses novel and non-substantial combinations and sub-combinations of the various elements, features, functions and/or properties disclosed herein. Similarly, 'a number of patent applications are related to π - a " or π first π element or its equivalent, it being understood that the scope of such claims includes one or more combinations of such elements, neither Two or more of these elements are also not excluded. The following patent claims specifically indicate that certain combinations and sub-combinations are directed to one of the disclosed embodiments and are novel and non-obvious.

第10頁 1302003 五、發明說明（8) 成者。在特徵、功能、元件及/或性質之其他組合及次組合中具體實施之發明，可經由本案申請專利範圍之修訂或在本案或相關申請案提出新申請專利範圍而申請專利。該等修訂或新申請專利範圍，無論該等範圍係朝向一不同發明或朝向該同一發明，無論其範圍與原有申請專利範圍不同、較寬、較窄或相等，亦視為包含在現在所揭示之技術内容内。Page 10 1302003 V. Description of invention (8) Adult. Inventions embodied in other combinations and sub-combinations of features, functions, components and/or properties may be patented through the revision of the scope of the patent application or the filing of a new patent application in the present disclosure or the related application. The scope of such amendments or new application patents, whether they are oriented towards a different invention or towards the same invention, whether the scope is different, wider, narrower or equal than the scope of the original patent application, is also considered to be included in the present invention. Reveal the technical content.

第11頁 1302003 圖式簡單說明第一圖所示係本發明半導體晶圓加工步驟之流程圖。第二圖所示係選自第一圖所示半導體晶圓加工步驟功效之示意圖，其剖面亦示出。而且，心至R5指D (匕），F (R2) 與R3)，G(R4)及I(R5)各步驟分別移除之材料。Page 11 1302003 Brief Description of the Drawings The first figure shows a flow chart of the processing steps of the semiconductor wafer of the present invention. The second figure is a schematic diagram of the process selected from the semiconductor wafer processing steps shown in the first figure, the cross section of which is also shown. Moreover, the heart to R5 refers to the material removed by each step of D (匕), F (R2) and R3), G(R4) and I (R5).

第12頁Page 12

Claims

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-·.·.·一.〜德:r 半涿速晶圓之方法，該晶圓界定一正面及六、申請專利範圍 1 · 一種加工背面，該晶圓曾經由研損傷，該方研磨晶圓背晶圓背面為該除晶圓材料唯研磨晶圓背背面研磨及正面；在拋光背面 2· 如申請專研磨步驟之後該晶圓。 3 · 如申請專研磨步驟之後該晶圓。 4· 如申請專合酸溶液。 5· 如申請專包含使用圓周 6·如申請專包含使用研磨樣0 研磨步驟預先予以加工且在背面上有方法唯一之單面研磨，該背面研磨為磨法包括下列步驟：面以移除晶圓材料，消除研磨損傷；該精移研磨步驟；面之後，蝕刻晶圓；蝕刻步驟之後，依序先後拋光晶圓之背面及期間移除0 · 5至4微米晶圓材料。利範圍第1項之方法，該方法尚包括：背面及晶圓背面拋光步驟之前，用鹼性物質月處理利範圍第1項之方法，該方法尚包括：背面及晶圓背面拋光步驟之前，用酸性物質處理利範圍第3項之方法，其中該酸性物質係混利範圍第1項之方法，其中該背面研磨步驟研磨機。利範圍第1項之方法，其中該背面研磨步驟元件，該研磨元件磨粒之粒度至少如丨5〇〇一-······1.~ De: The method of semi-idle wafer, the wafer defines a front side and six, the patent application scope 1 · A processing back surface, the wafer was once damaged by grinding, the square grinding crystal The back of the wafer on the back of the wafer is the only backside of the wafer material and the front side of the wafer is polished and polished on the back side. 2. The wafer is applied after the special grinding step. 3 · If you apply for a dedicated grinding step after the wafer. 4· If applying for a special acid solution. 5· If the application specifically includes the use of the circumference 6 · If the application specifically includes the use of the grinding sample 0 grinding step pre-processed and has the only one-side grinding method on the back side, the back grinding to grinding method includes the following steps: The round material eliminates the grinding damage; the fine grinding step; after the surface, the wafer is etched; after the etching step, the back side of the wafer is sequentially polished and the 0. 5 to 4 micron wafer material is removed. The method of claim 1, which further comprises: before the polishing step on the back side and the back side of the wafer, the method of treating the first item in the first step with an alkaline substance, the method further comprising: before the back side and the back side polishing step of the wafer, The method of claim 3, wherein the acidic material is the method of item 1, wherein the back grinding step is a grinder. The method of item 1, wherein the back grinding step element has a particle size of at least 丨5〇〇

第13頁 1302003 六、申請專利範圍 7. 如申請專利範圍第1項之方法，其中經研磨步驟移除晶圓背面之損傷。 8. 如申請專利範圍第1項之方法，研磨晶圓之後尚包括用鹼性物質處理該晶圓及酸性物質處理該晶圓。Page 13 1302003 VI. Scope of Application Patent 7. The method of claim 1, wherein the damage on the back side of the wafer is removed by a grinding step. 8. The method of claim 1, wherein after the wafer is polished, the wafer is treated with an alkaline substance and the acid is processed.

第14頁 1302003Page 14 1302003

第一圖 (A) (B) (Ο (D) (E) (F) (G) (H) (!) (J) (K)First picture (A) (B) (Ο (D) (E) (F) (G) (H) (!) (J) (K)